WO2018040780A1 - Dispositif électroluminescent à points quantiques et module de rétroéclairage - Google Patents

Dispositif électroluminescent à points quantiques et module de rétroéclairage Download PDF

Info

Publication number
WO2018040780A1
WO2018040780A1 PCT/CN2017/093754 CN2017093754W WO2018040780A1 WO 2018040780 A1 WO2018040780 A1 WO 2018040780A1 CN 2017093754 W CN2017093754 W CN 2017093754W WO 2018040780 A1 WO2018040780 A1 WO 2018040780A1
Authority
WO
WIPO (PCT)
Prior art keywords
quantum dot
light
emitting device
water
layer
Prior art date
Application number
PCT/CN2017/093754
Other languages
English (en)
Chinese (zh)
Inventor
肖伟
李硕
于甄
Original Assignee
张家港康得新光电材料有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 张家港康得新光电材料有限公司 filed Critical 张家港康得新光电材料有限公司
Publication of WO2018040780A1 publication Critical patent/WO2018040780A1/fr

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S8/00—Lighting devices intended for fixed installation
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light

Definitions

  • the invention belongs to the technical field of liquid crystal display, and particularly relates to a quantum dot light emitting device and a backlight module.
  • the liquid crystal display device includes an LCD liquid crystal panel for displaying image content and a backlight module for supplying a white light source to the LCD liquid crystal panel.
  • the white light source color gamut of the backlight module determines the color gamut of the image content presented by the liquid crystal display.
  • the blue LED chip is used to excite the quantum dots to emit green light and red light, and the green light, the red light and the unexcited blue light are mixed into a white light source.
  • Quantum Dot is a quasi-zero-dimensional nanocrystal composed of a small number of atoms. It is generally spherical or spheroidal in shape and is made of a semiconductor material (usually composed of IIB-VIB or IIIB-VB elements). Nanoparticles with a diameter of 2 to 20 nm are stabilized. These nanoparticles can illuminate higher wavelengths of light at specific wavelengths of light.
  • Quantum Dot Enhancement Film QDEF
  • QDEF Quantum Dot Enhancement Film
  • the luminescence properties of quantum dots are mainly determined by the quantum size effect and the dielectric confinement effect.
  • the electrons on the valence band absorb a certain amount of energy and the photons transition to the conduction band. Then jump back to the valence band and release excess energy in the form of radiated photons, which produces fluorescence.
  • the excitation efficiency drops rapidly or even fails when the temperature is higher than 120 °C. Therefore, in order to avoid the failure of the operating temperature of the LED light-emitting chip to cause the quantum dot material to fail, the quantum dot material must be placed away from the LED. The place where the chip is illuminated to maintain proper insulation gap. Therefore, the current mature practice in the industry: (1) In the direct-lit backlight module solution, the quantum dot material is encapsulated in an optical film to form a quantum dot film, and for the convenience of assembly, the quantum dot film is used as an optical film. One component of the set is placed between the diffuser plate and the LCD liquid crystal panel. 1 is a typical assembly structure of a prior art direct type backlight module.
  • an LED light emitting chip 10 disposed on a printed circuit is fixed on a back plate 11, and a quantum dot film 8 is disposed on a diffusion plate. 9 between the light-emitting surface and the other optical film 7.
  • a direct-type backlight module of the structure of FIG. 1 it is occasionally found that the excitation performance of the quantum dot material fails, causing an increase in the blue component directly transmitted through the quantum dot film 8, and correspondingly, the red and green light generated by the excitation is less, resulting in less
  • the backlight module has a subjective blue color as a whole, and the cost of the quantum dot film 8 is also high, and the edge is prone to failure in a long-term use environment.
  • the quantum dot material is encapsulated in a glass tube to form a quantum dot tube, and the quantum dot tube is disposed on the light emitting side of the LED light emitting chip through a fixed bracket and is kept constant with the LED light emitting chip. Insulation gap, the disadvantage of this method is that the installation is inconvenient due to the need to set the bracket.
  • the present invention aims to provide a quantum dot light-emitting device and a backlight module to solve the problem of failure of the excitation performance of the quantum dot material in the quantum dot film, and can effectively reduce the cost.
  • the present invention provides a quantum dot light emitting device including an LED light emitting chip, a bracket structure, and a lens integrated structure, the lens integrated structure including a lens body, a quantum dot layer, and a The water-oxygen barrier layer, wherein the lens body is provided with a concave portion, which is sequentially provided with a quantum dot layer and a first water-oxygen barrier layer from the bottom end toward the opening, wherein the first water-oxygen barrier layer covers the At the recess opening of the lens body, the lens integrated structure is fixed to the bracket.
  • bracket structure comprises a hollow structure, a bottom portion and a side wall, and the bottom portion is provided with an opening, and the LED light emitting chip is received at the opening.
  • the first water-oxygen barrier layer is made of a glass or water vapor barrier material having a water vapor barrier property of greater than or equal to 10 -1 cc/m 2 .day.
  • the lens integrated structure further includes a second water oxygen barrier layer, and the second water oxygen barrier layer is between the lens body and the quantum dot layer.
  • the second water-oxygen barrier layer is made of a glass or water vapor barrier material having a water vapor barrier property of greater than or equal to 10 -1 cc/m 2 .day.
  • the outer surface of the lens body is provided with an anti-reflection layer for reflecting light emitted from the quantum dot layer, preferably for reflecting light having a wavelength of less than 400 nm emitted from the quantum dot layer.
  • a preferred technical solution is that the diffuse reflectance of the inner surface of the bottom portion and the inner surface of the side wall is greater than or equal to 90%.
  • a preferred technical solution is that the inner surface of the bottom and the inner surface of the side wall are coated with a highly diffuse reflective coating.
  • the present invention provides a backlight module including a back plate and a diffusion plate which are sequentially stacked, and the back plate is provided with a plurality of quantum dot light-emitting devices facing the surface of the diffusion plate.
  • the invention integrates the quantum dot layer, the lens body and the LED light-emitting chip into one body, which greatly reduces the manufacturing cost.
  • the anti-reflection layer on the outer surface of the lens can reflect the short-band blue light back to the quantum dot layer for secondary excitation, thereby reducing the emission of short-wavelength blue light, and improving the color gamut while achieving the function of eliminating blue-eye protection.
  • the quantum dot excitation performance failure is greatly reduced.
  • a quantum dot light emitting device includes: a stent structure; a lens integrated structure, a lens integrated structure fixed on the stent structure, and a lens integrated structure including a lens body a quantum dot layer and a first water-oxygen barrier layer, the lens body has a light-incident surface disposed adjacent to the support structure, the light-incident surface is provided with a concave portion, and the quantum dot layer is disposed in the concave portion, and the first water-oxygen barrier layer covers the concave portion to be disposed
  • the quantum dot layer is sealed in the recess; n1 LED light emitting chips are disposed on the support structure for providing incident light to the lens integrated structure, and n1 is a positive integer.
  • the first water oxygen barrier layer is disposed to cover the light incident surface other than the concave portion and the concave portion.
  • bracket structure comprises: a side wall, the lens integrated structure is fixed on the top of the side wall; the bottom part is connected with the side wall and encloses a hollow structure, and the LED light emitting chip is arranged on the bottom, preferably the bottom has an opening, and the bottom has n2 Opening holes, each of the openings accommodates n3 LED light-emitting chips, wherein n2 and n3 are positive integers, and n1 ⁇ n2 ⁇ 1, n1 ⁇ n3 ⁇ 1.
  • the first water-oxygen barrier layer is made of a glass or water vapor barrier material having a water vapor barrier property of greater than or equal to 10 -1 cc/m 2 .day.
  • the lens integrated structure further includes a second water-oxygen barrier layer disposed between the lens body and the quantum dot layer.
  • the second water-oxygen barrier layer is made of a glass or water vapor barrier material having a water vapor barrier property of greater than or equal to 10 -1 cc/m 2 .day.
  • the light-emitting surface of the lens body is provided with an anti-reflection layer for reflecting light having a wavelength of less than 400 nm emitted from the quantum dot layer.
  • the surface of the sidewall facing the hollow structure is the inner surface of the sidewall
  • the surface of the bottom facing the hollow structure is the inner surface of the bottom
  • the diffuse reflectance of the inner surface of the bottom and the inner surface of the sidewall is greater than or equal to 90 %.
  • the inner surface of the bottom portion and the inner surface of the side wall are provided with a highly diffuse reflection coating having a diffuse reflectance of 90% to 98%.
  • the lens integrated structure is bonded to the bracket structure.
  • the cross-sectional area of the hollow structure parallel to the bottom increases in a direction away from the bottom.
  • n2 1
  • the opening is disposed on the projection of the quantum dot layer at the bottom.
  • a backlight module comprising a back sheet and a diffusion sheet which are sequentially stacked, and the back sheet is provided with one or more of the above-described quantum dot light-emitting devices toward the surface of the diffusion sheet.
  • the backlight module further includes an optical film disposed on a side of the diffusion plate remote from the quantum dot light emitting device.
  • the quantum dot layer, the lens body and the LED light-emitting chip are integrated and packaged integrally, thereby greatly reducing the manufacturing cost.
  • the quantum dot layer is disposed in the lens integrated structure, thereby increasing the distance of the nuclear LED light-emitting chip, thereby reducing the influence of the heat generated by the LED light-emitting chip on the quantum dot layer, thereby effectively alleviating the heat of the LED light-emitting chip.
  • the quantum dot is invalidated, thereby ensuring that the quantum dot layer is stably excited and emits a predetermined amount of red light and green light after receiving the light emitted by the LED light emitting chip, thereby improving the light emitting effect of the quantum dot light emitting device.
  • the first water-oxygen barrier layer is disposed on the concave portion, thereby isolating the quantum dot layer and the LED light-emitting chip, and forming a protection for the quantum dot layer, thereby greatly reducing the quantum dot excitation performance failure. Since the quantum dot excitation performance is ensured, the light intensity distribution comparable to the prior art can be realized under the premise of appropriately reducing the number of LED light-emitting chips.
  • FIG. 1 is a schematic diagram of a prior art direct type backlight module
  • FIG. 2 is a schematic diagram of a first embodiment of a quantum dot light emitting device
  • Embodiment 3 is a schematic diagram of Embodiment 2 of a quantum dot light emitting device
  • FIG. 4 is a schematic diagram of a backlight module
  • Figure 5 is a diagram showing the light intensity distribution of the LED of the present invention.
  • Fig. 6 is a view showing the results of testing the actual temperature of the outermost surface of the lens body of the quantum dot light-emitting device shown in Fig. 3 and the lower surface of the first water-oxygen barrier layer as a function of time.
  • a quantum dot light source package device a quantum dot light emitting device, comprising an LED light emitting chip 10, a support structure 1 and a lens integrated structure 18,
  • the lens integrated structure 18 includes a lens body 2 and a quantum dot layer 3 and the first water-oxygen barrier layer 4, wherein the lens body 2 is provided with a concave portion, which is sequentially provided with a quantum dot layer 3 and a first water-oxygen barrier layer 4 from the bottom end toward the opening direction, the first The water-oxygen barrier layer 4 covers the recess opening of the lens body 2, and the lens integrated structure 18 is adhesively fixed to the bracket structure 1.
  • bracket structure 1 comprises a hollow structure 19, a bottom portion 13 and a side wall 14, and the bottom portion 13 is provided with an opening, and the LED light emitting chip 10 is accommodated at the opening.
  • the lens integrated structure 18 further includes a second water-oxygen barrier layer 5, and the second water-oxygen barrier layer 5 is in the lens body 2 and the quantum dot layer 3. between.
  • the first water-oxygen barrier layer 4 and the second water-oxygen barrier layer 5 are each made of a material having a water vapor barrier property of greater than or equal to 10 -1 cc/m 2 .day.
  • the material of the first water oxygen barrier layer 4 and the second water oxygen barrier layer 5 is a glass or a water vapor barrier film. Since the water vapor barrier membrane is easily deformed, it is preferable that the first water oxygen barrier layer 4 is a water vapor barrier membrane, and the second water oxygen barrier layer 5 is either a glass or a water vapor barrier membrane.
  • a preferred embodiment is that the reflectance of the inner surface 16 of the bottom and the inner surface 17 of the side wall is greater than or equal to 90%.
  • the stent structure 1 can be made of a material having a higher reflectance, or a high diffuse reflection coating can be applied to the inner surface 16 of the bottom and the inner surface 17 of the sidewall when the stent structure 1 is made of other materials.
  • the LED light emitting chip 10 is a blue LED light emitting chip, and the main wavelength range is 380 to 470 nm.
  • the outer surface of the lens body is provided with an anti-reflection layer 15 for reflecting light emitted from the quantum dot layer 3.
  • a backlight module includes a back plate 11 , a diffusion plate 9 and an optical film 7 which are sequentially stacked, and the back plate 11 is provided with a plurality of quantum dot source packaging devices 12 facing the surface of the diffusion plate 9 .
  • the lens body, the LED light-emitting chip and the quantum dots are integrally packaged, which greatly reduces the manufacturing cost.
  • the anti-reflection layer on the outer surface of the lens body 2 can reflect the short-band blue light back to the quantum dot layer 3 for secondary excitation, thereby reducing the emission of the short-band blue light, and achieving the function of eliminating the blue-eye protection while improving the color gamut. .
  • the failure rate of quantum dot excitation is greatly reduced.
  • the anti-reflection layer on the outer surface of the lens body 2 can reflect the short-band blue light back to the quantum dot layer for secondary excitation, thereby reducing the emission of short-wavelength blue light, and achieving the function of eliminating blue light eye protection while improving the color gamut. Due to the protection of the upper and lower water vapor barriers, the failure rate of quantum dot excitation is greatly reduced.
  • the light intensity distribution of each angle of the blue LED is shown in Fig. 5.
  • the angle is the angle between the normal of the plane of the quantum dot film and the light emitted by the blue LED.
  • the X axis represents the radiation angle
  • the Y axis represents the relative light intensity.
  • the light intensity of the LED light pattern distributed at a large angle of 60°-80° from the normal direction of 0° can still be equivalent to the light intensity in the normal direction, that is, the unevenness of the lamp shadow can be eliminated.
  • the light type distribution can achieve an ideal A (angle) / P (pitch) ratio, reasonably arrange the distribution of the direct type LED, reduce the number of LEDs used, eliminate the difference between the LED light groups, and improve the backlight module.
  • a quantum dot light emitting device is provided. As shown in FIGS. 2 and 3, the quantum dot light emitting device includes a stent structure 1, a lens integrated structure 18, and n1 LED light emitting chips 10.
  • the lens integrated structure 18 is fixed on the support structure 1.
  • the lens integrated structure 18 includes a lens body 2, a quantum dot layer 3 and a first water-oxygen barrier layer 4.
  • the lens body 2 has a light-incident surface disposed near the support structure 1, and a light-incident surface.
  • a recess is provided, and a quantum dot layer 3 is disposed in the recess, the first water-oxygen barrier layer 4 covers the recess to seal the quantum dot layer 3 in the recess; n1 LED light-emitting chips 10 are disposed on the bracket structure 1 for the lens
  • the integrated structure provides incident light and n1 is a positive integer.
  • the quantum dot light-emitting device integrally integrates the quantum dot layer 3, the lens body 2 and the LED light-emitting chip 10, thereby greatly reducing the manufacturing cost.
  • the quantum dot layer 3 is disposed in the lens integrated structure 18, so that the distance of the nuclear LED light-emitting chip 10 can be increased, thereby reducing the influence of the heat generated by the LED light-emitting chip 10 on the quantum dot layer 3, thereby effectively alleviating the effect.
  • the heat of the LED light-emitting chip 10 causes the quantum dot to fail, thereby ensuring that the quantum dot layer 3 is stably excited and emits a predetermined amount of red light and green light after receiving the light emitted from the LED light-emitting chip 10, thereby improving the luminous effect of the quantum dot light-emitting device.
  • the first water-oxygen barrier layer 4 is disposed on the concave portion, thereby isolating the quantum dot layer 3 and the LED light-emitting chip 10, and forming a protection for the quantum dot layer 3, thereby greatly reducing the quantum dot excitation performance failure. . Since the quantum dot excitation performance is ensured, the light intensity distribution comparable to the prior art can be realized under the premise of appropriately reducing the number of LED light-emitting chips.
  • the first water-oxygen barrier layer 4 covers the light-incident surface other than the concave portion and the concave portion. .
  • the above-described bracket structure 1 includes a side wall 14 and a bottom portion 13, a lens integrated structure 18 is fixed to the top of the side wall 14, and the bottom portion 13 is connected to the side wall 14. And enclosing a hollow structure 19, the LED light emitting chip 10 is disposed on the bottom portion 13.
  • Applying the stent structure 1 having the above structure to the quantum dot light-emitting device of the present application can further increase the distance between the quantum dot layer 3 and the LED light-emitting chip 10, thereby further reducing the quantum dots caused by the heat of the LED light-emitting chip 10. The probability of stimulating performance failure.
  • the bottom portion 13 has an opening, and the bottom portion 13 has an n2 opening, wherein each of the openings has n3 LED light-emitting chips 10, wherein n2 and n3 are positive integers, and n1 ⁇ n2 ⁇ 1, n1 ⁇ n3 ⁇ 1 .
  • the LED light-emitting chip 10 is disposed at the opening of the bottom portion 13, increasing the distance between the quantum dot layer 3 and the LED light-emitting chip 10.
  • n2 1 is preferred, and the openings are provided on the projection of the quantum dot layer 3 at the bottom 13.
  • the first water-oxygen barrier layer 4 is used to block water oxygen in the stent structure 1 from entering the quantum dot layer 3, thereby avoiding quantum dot failure caused by water-oxygen erosion.
  • the first water-oxygen barrier is preferably used.
  • Layer 4 is made of a glass or water vapor barrier material having a moisture barrier property greater than or equal to 10 -1 cc/m 2 .day. The use of a water vapor barrier membrane material can reduce the thickness of the quantum dot light emitting device.
  • the lens integrated structure 18 further includes a second water-oxygen barrier layer 5 disposed between the lens body 2 and the quantum dot layer 3.
  • the erosion of the quantum dot layer 3 by the water oxygen entering from the outside of the lens body 2 is blocked by the second water-oxygen barrier layer 5.
  • the second water-oxygen barrier layer 5 is made of a glass or water vapor barrier material having a water vapor barrier property of 10 -1 cc/m 2 .day or more.
  • the light-emitting surface of the lens body 2 is provided with an anti-reflection layer 15 for reflecting light having a wavelength of less than 400 nm emitted from the quantum dot layer 3.
  • the anti-reflection layer 15 on the outer surface of the lens body 2 can reflect the short-wavelength blue light back to the quantum dot layer 3 for secondary excitation, and the anti-blue light structure of the spectacle lens can be used to fabricate the anti-reflection layer 15, for example, by using a multi-layer coating method. Thereby, the emission of short-wavelength blue light is reduced, and more blue light is reflected back to the quantum dot layer, thereby achieving the function of eliminating blue light eye protection while improving the color gamut.
  • the surface of the side wall 14 facing the hollow structure is named the inner surface 16 of the side wall, and the surface of the bottom portion 13 facing the hollow structure is named.
  • the inner surface 17 of the bottom, the inner surface 17 of the bottom and the inner surface 16 of the side wall have a diffuse reflectance greater than or equal to 90%, such as a diffuse reflectance of the coating of 90% to 98%.
  • the stent structure 1 can be made of a material having a higher reflectance, or the inner surface 16 of the side wall and the inner surface 17 of the bottom of the stent structure 1 are coated with a high diffuse reflection when the stent structure 1 is made of other materials. coating.
  • the lens integrated structure 18 of the present application can be fixed on the bracket structure 1 by various fixing methods, such as screwing, riveting, snapping, etc., and the lens integrated structure 18 is preferably bonded to the bracket structure 1 in the present application.
  • the above bonding method can better seal the gap between the lens integrated structure 18 and the support structure 1, thereby forming protection for the quantum dot layer 3.
  • the cross-sectional area of the hollow structure parallel to the bottom portion 13 increases in a direction away from the bottom portion 13.
  • a backlight module is provided. As shown in FIG. 4 , the backlight module includes a back plate 11 and a diffusion plate 9 which are sequentially stacked, and the back plate 11 faces the diffusion plate 9 .
  • One or more of the above-described quantum dot light-emitting devices 12 are provided on the surface.
  • the backlight module of the quantum dot light-emitting device of the present application has better light-emitting effect and longer service life.
  • the backlight module further includes an optical film 7 disposed on a side of the diffusing plate 9 remote from the quantum dot light emitting device 12.
  • the blue light LED is used as the LED light-emitting chip of the quantum dot light-emitting device, and the light intensity distribution of the quantum dot light-emitting device shown in FIGS. 2 and 3 is tested.
  • the test result is shown in FIG. 5, and the angle is the normal of the plane of the quantum dot film and the blue LED.
  • the angle between the outgoing rays, the X axis in Figure 5 represents the radiation angle, and the Y axis represents the relative light intensity.
  • the light intensity of the LED light pattern distributed at a large angle of 60°-80° from the normal direction of 0° still has a strong light intensity, and the LED illumination angle is large enough to be arranged reasonably.
  • the distribution of LEDs can reduce the number of LEDs used, eliminate the phenomenon of light and dark between LEDs, and improve the optical image of backlight modules.
  • the actual temperature of the outermost surface of the lens body of the quantum dot light-emitting device shown in FIG. 3 and the lower surface of the first water-oxygen barrier layer, specifically the upper surface of the outermost layer of the lens body and the first water-oxygen barrier layer, are tested.
  • the lower surface is respectively provided with a temperature measuring instrument for measurement. The measurement result is shown in Fig.
  • the lens is
  • the lower surface temperature of the main body does not reach 70 ° C (ie, the temperature of the lower surface of the first water oxygen barrier layer does not reach 70 ° C); the temperature of the upper surface of the lens body does not reach 60 ° C, and the temperature of the quantum dot layer disposed in the lens integrated structure is Will be between these two temperatures.
  • Excitation efficiency of quantum dots when the temperature is higher than 120 °C The rapid drop or even failure, and the temperature of the quantum dot layer of the present application does not exceed 70 ° C, so the quantum dots do not cause a decrease in excitation efficiency due to excessive heating, that is, maintain high excitation efficiency.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Led Device Packages (AREA)
  • Planar Illumination Modules (AREA)

Abstract

L'invention concerne un dispositif électroluminescent à points quantiques (12) et un module de rétroéclairage. Le module de rétroéclairage comprend un fond de panier (11) et une plaque de diffusion (9) qui sont empilés de manière séquentielle. Une surface du fond de panier (11) faisant face à la plaque de diffusion (9) est pourvue de multiples dispositifs électroluminescents à points quantiques (12). Le dispositif électroluminescent à points quantiques (12) comprend une puce électroluminescente à DEL (10), une structure de support (1) et une structure d'intégration de lentille (18). La structure d'intégration de lentille (18) comprend un corps de lentille (2), une couche de points quantiques (3) et une première couche barrière à l'eau et à l'oxygène (4). Le corps de lentille (2) présente un évidement. La couche de points quantiques (3) et la première couche barrière à l'eau et à l'oxygène (4) sont disposées de manière séquentielle au niveau de l'évidement dans une direction allant d'une extrémité inférieure à une ouverture de l'évidement. La première couche barrière à l'eau et à l'oxygène (4) recouvre l'ouverture de l'évidement du corps de lentille (2). La structure d'intégration de lentille (18) est collée et fixée à la structure de support (1). L'invention peut réduire de manière significative un taux de défaillance d'excitation de points quantiques et les coûts de fabrication.
PCT/CN2017/093754 2016-08-31 2017-07-20 Dispositif électroluminescent à points quantiques et module de rétroéclairage WO2018040780A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201610785581.3A CN106383420A (zh) 2016-08-31 2016-08-31 一种量子点发光器件及背光模组
CN201610785581.3 2016-08-31

Publications (1)

Publication Number Publication Date
WO2018040780A1 true WO2018040780A1 (fr) 2018-03-08

Family

ID=57939407

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2017/093754 WO2018040780A1 (fr) 2016-08-31 2017-07-20 Dispositif électroluminescent à points quantiques et module de rétroéclairage

Country Status (2)

Country Link
CN (1) CN106383420A (fr)
WO (1) WO2018040780A1 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108735879A (zh) * 2018-07-26 2018-11-02 易美芯光（北京）科技有限公司 一种含有量子点的smd封装结构
CN111103723A (zh) * 2018-10-26 2020-05-05 深圳Tcl新技术有限公司 一种液晶显示背光模组
CN114019717A (zh) * 2021-09-18 2022-02-08 信阳市谷麦光电子科技有限公司 一种高效稳定量子点发光led
CN114945861A (zh) * 2020-10-16 2022-08-26 京东方科技集团股份有限公司 背光模组及显示装置

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106383420A (zh) * 2016-08-31 2017-02-08 张家港康得新光电材料有限公司 一种量子点发光器件及背光模组
CN107102473A (zh) * 2017-05-22 2017-08-29 青岛海信电器股份有限公司 一种背光模组及液晶显示装置
CN107247362A (zh) * 2017-06-19 2017-10-13 深圳市华星光电技术有限公司 量子点光学组件、量子点透镜及其制造方法
CN107275462A (zh) * 2017-06-23 2017-10-20 深圳Tcl新技术有限公司 Led、背光模组以及液晶显示装置
CN107246563A (zh) * 2017-07-26 2017-10-13 合肥惠科金扬科技有限公司 量子点背光模组、显示器及量子点透镜制作方法
US10615318B2 (en) 2018-02-02 2020-04-07 Huizhou China Star Optoelectronics Technology Co., Ltd. Quantum dot LED
CN108461609A (zh) * 2018-02-02 2018-08-28 惠州市华星光电技术有限公司 一种量子点led
CN109830475A (zh) * 2019-02-18 2019-05-31 南通创亿达新材料股份有限公司 高色域量子点灯条、制备方法及其背光模组
CN111803797B (zh) * 2020-06-10 2022-07-08 殷硕仑 一种短波红外集成医疗光源及应用
CN111897163A (zh) * 2020-08-20 2020-11-06 安徽芯瑞达科技股份有限公司 一种led搭配透镜实现超低od的背光模组装置
CN111796458A (zh) * 2020-08-25 2020-10-20 苏州东岩电子科技有限公司 一种led发光器件及其直下式背光模组
CN114333614A (zh) * 2020-09-28 2022-04-12 京东方科技集团股份有限公司 显示面板及显示装置
CN113075819A (zh) * 2021-03-24 2021-07-06 惠州市华星光电技术有限公司 背光模组及液晶显示装置

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8556490B1 (en) * 2010-07-01 2013-10-15 Cooper Technologies Company Systems, methods and devices for providing quantum dot lighting solutions
CN103672732A (zh) * 2013-12-11 2014-03-26 深圳市华星光电技术有限公司 一种量子点透镜及其制造方法
CN203784738U (zh) * 2013-09-30 2014-08-20 易美芯光（北京）科技有限公司 一种可实现高色域背光源的光学装置
CN204289509U (zh) * 2014-11-20 2015-04-22 Tcl集团股份有限公司 量子点led封装结构
CN104617197A (zh) * 2015-01-08 2015-05-13 青岛海信电器股份有限公司 一种显示模组用led发光器件及显示模组
US20150162507A1 (en) * 2013-12-05 2015-06-11 Vizio Inc Using Quantum Dots for extending the color gamut of LCD displays
CN105074943A (zh) * 2012-11-30 2015-11-18 康宁股份有限公司 具有量子点玻璃安全板的led照明装置
CN106383420A (zh) * 2016-08-31 2017-02-08 张家港康得新光电材料有限公司 一种量子点发光器件及背光模组

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8556490B1 (en) * 2010-07-01 2013-10-15 Cooper Technologies Company Systems, methods and devices for providing quantum dot lighting solutions
CN105074943A (zh) * 2012-11-30 2015-11-18 康宁股份有限公司 具有量子点玻璃安全板的led照明装置
CN203784738U (zh) * 2013-09-30 2014-08-20 易美芯光（北京）科技有限公司 一种可实现高色域背光源的光学装置
US20150162507A1 (en) * 2013-12-05 2015-06-11 Vizio Inc Using Quantum Dots for extending the color gamut of LCD displays
CN103672732A (zh) * 2013-12-11 2014-03-26 深圳市华星光电技术有限公司 一种量子点透镜及其制造方法
CN204289509U (zh) * 2014-11-20 2015-04-22 Tcl集团股份有限公司 量子点led封装结构
CN104617197A (zh) * 2015-01-08 2015-05-13 青岛海信电器股份有限公司 一种显示模组用led发光器件及显示模组
CN106383420A (zh) * 2016-08-31 2017-02-08 张家港康得新光电材料有限公司 一种量子点发光器件及背光模组

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108735879A (zh) * 2018-07-26 2018-11-02 易美芯光（北京）科技有限公司 一种含有量子点的smd封装结构
CN111103723A (zh) * 2018-10-26 2020-05-05 深圳Tcl新技术有限公司 一种液晶显示背光模组
CN114945861A (zh) * 2020-10-16 2022-08-26 京东方科技集团股份有限公司 背光模组及显示装置
CN114945861B (zh) * 2020-10-16 2023-10-17 京东方科技集团股份有限公司 背光模组及显示装置
CN114019717A (zh) * 2021-09-18 2022-02-08 信阳市谷麦光电子科技有限公司 一种高效稳定量子点发光led
CN114019717B (zh) * 2021-09-18 2023-10-24 信阳市谷麦光电子科技有限公司 一种高效稳定量子点发光led

Also Published As

Publication number Publication date
CN106383420A (zh) 2017-02-08

Similar Documents

Publication Publication Date Title
WO2018040780A1 (fr) Dispositif électroluminescent à points quantiques et module de rétroéclairage
US9970630B2 (en) Quantum dot light-emitting device and display device
KR102068511B1 (ko) 퀀텀 닷 백라이트 모듈 및 디스플레이 장치
US10203547B2 (en) Quantum dot light emitting device, backlight module, and liquid crystal display device
US11592159B2 (en) Light source system and lighting apparatus
WO2018040781A1 (fr) Dispositif électroluminescent à points quantiques et un module à retroéclairage
RU2508563C2 (ru) Низкопрофильная линза полного внутреннего отражения с боковым излучением для светодиода
JP7122832B2 (ja) 照明装置、表示装置及びテレビ受信装置
JP5188077B2 (ja) 光方向変換素子及び面状発光装置
JP2007018936A (ja) 光源装置
JP2006108076A (ja) バックライトモジュール
WO2016045159A1 (fr) Dispositif émetteur de lumière de diode électroluminescente (del), module rétroéclairage et panneau d'affichage
JP2006229228A (ja) マルチチップ発光ダイオードユニット、それを採用したバックライトユニット及び液晶表示装置
WO2020025055A1 (fr) Source de lumière à del, module d'affichage de source de lumière de surface et procédé de préparation de source de lumière à del
JP2010062305A (ja) 照明装置、及び液晶表示装置
CN104914622A (zh) 量子点发光器件和背光模组
TW200841089A (en) Light source module and liquid crystal display
JP2015035504A (ja) 光源装置
CN105444044A (zh) 一种发光二极管led发光器件、背光模组及显示面板
US20210080785A1 (en) Backlight module
JP6401994B2 (ja) 液晶表示装置
WO2013175706A1 (fr) Élément optique, dispositif d'émission de lumière et dispositif de projection
WO2020019856A1 (fr) Panneau lumineux, module de rétro-éclairage et appareil d'affichage
US20190108786A1 (en) Backlight unit
TWM569435U (zh) Direct light guiding structure

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17845083

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 17845083

Country of ref document: EP

Kind code of ref document: A1