WO2018028334A1 - 阵列基板、显示面板、显示装置和电流测量方法 - Google Patents
阵列基板、显示面板、显示装置和电流测量方法 Download PDFInfo
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- WO2018028334A1 WO2018028334A1 PCT/CN2017/091054 CN2017091054W WO2018028334A1 WO 2018028334 A1 WO2018028334 A1 WO 2018028334A1 CN 2017091054 W CN2017091054 W CN 2017091054W WO 2018028334 A1 WO2018028334 A1 WO 2018028334A1
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- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/006—Electronic inspection or testing of displays and display drivers, e.g. of LED or LCD displays
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- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
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- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
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- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
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- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3275—Details of drivers for data electrodes
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Definitions
- the present disclosure relates to display technology, and more particularly to array substrates, display panels, display devices, and current measurement methods.
- OLED Organic Light-Emitting Diode
- the driving transistor can generate a driving current according to the data voltage to drive the organic light emitting diode to emit light for display.
- the threshold voltage of the driving transistor affects the correspondence between the data voltage and the driving current.
- the threshold voltages of different driving transistors may be different, and the threshold voltages of the same driving transistor may be different at different times. Therefore, the same driving current may not be obtained for the same data voltage, which may cause uneven illumination of the display panel. .
- Embodiments of the present disclosure provide an array substrate, a display panel, a display device, and a current measuring method.
- a first aspect of the present disclosure provides an array substrate including: a plurality of pixel units and a sensing line.
- the pixel unit includes a driving transistor, and the sensing line is configured to transmit a driving to the sensing device The output of the transistor.
- the outputs of the at least two drive transistors are connected in series.
- the output terminals of adjacent drive transistors are connected by a first switching element.
- an output end of at least one of the driving transistors is connected to the sensing line through the second switching element.
- the pixel unit includes a plurality of driving transistors.
- the outputs of at least two of the drive cells in the pixel unit are connected in series.
- the output terminals of the adjacent driving transistors are connected by the first switching element.
- an output end of at least one driving transistor is connected to the sensing line through the second switching element.
- the output ends of all the driving transistors in the pixel unit are connected in series by the plurality of first switching elements, and the output end of one of the pixel units passes through the second switching element and the sensing line connection.
- control terminals of the plurality of first switching elements of the pixel unit are applied with the same control voltage.
- control terminals of the plurality of first switching elements of the pixel unit are applied with different control voltages.
- control terminals of the drive transistors whose outputs are connected in series are responsive to different control signals.
- the pixel unit further includes a first transistor, a capacitor, and a light emitting unit.
- the first transistor is coupled to the capacitor and is configured to write a data voltage to the capacitor.
- a capacitor is coupled to the drive transistor and configured to store a data voltage.
- the driving transistor is connected to the light emitting unit and configured to drive the light emitting unit to emit light according to the data voltage.
- the light emitting unit is an organic electroluminescent unit.
- the first switching element and the second switching element are switching transistors.
- the array substrate includes a plurality of columns of pixel units and a plurality of sensing lines. Wherein, one sensing line is connected to one column of pixel units.
- a second aspect of the present disclosure provides a display panel including the above array substrate.
- a third aspect of the present disclosure provides a display device including the above display panel.
- a fourth aspect of the present disclosure provides a current measuring method for measuring a driving current outputted by a driving transistor of the array substrate, the current measuring method comprising: turning on an output end of the detected driving transistor and sensing A switching element between the lines electrically connects the detected driving transistor to the sensing line.
- the detected drive transistor is driven to generate a drive current.
- the drive current is detected by the sensing line.
- a driving transistor is used to drive the organic electroluminescent unit.
- the measuring method further includes applying a reference voltage smaller than an opening voltage of the organic electroluminescent unit to the output end of the detected driving transistor through the sensing line.
- detecting the driving current through the sensing line includes detecting a change in a voltage of the sensing line within a predetermined time.
- the value of the drive current is obtained according to the change of the voltage of the sensing line within a predetermined time.
- a driving transistor is used to drive the OLED, and the measuring method includes applying a reference voltage smaller than an ON voltage of the OLED to an output end of the detected driving transistor through the sensing line.
- detecting the driving current through the sensing line includes detecting a change in a voltage of the sensing line within a predetermined time.
- the value of the drive current is obtained according to the change of the voltage of the sensing line within a predetermined time.
- the current measurement speed of the driving transistor can be improved.
- 1 is a schematic circuit diagram of an array substrate capable of detecting a current of a driving transistor
- FIG. 2 is a first schematic diagram of an array substrate provided by an embodiment of the present disclosure
- FIG. 3 is a second schematic diagram of an array substrate provided by an embodiment of the present disclosure.
- FIG. 4 is a third schematic diagram of an array substrate provided by an embodiment of the present disclosure.
- FIG. 5 is a fourth schematic diagram of an array substrate provided by an embodiment of the present disclosure.
- Figure 6 is a schematic circuit diagram of the array substrate shown in Figure 3.
- FIG. 7 is a flow chart of a current measurement method provided by an embodiment of the present disclosure.
- the array substrate includes a pixel unit and a sensing line SL.
- the pixel unit includes a plurality of sub-pixel units.
- the sub-pixel units respectively include drive transistors T1, T2, T3.
- the array substrate further includes a plurality of switching elements S1, S2, and S3.
- the output terminals of each of the driving transistors T1, T2, T3 are connected to the sensing line SL through switching elements.
- one sensing line SL may be used to connect with a driving transistor in one column of pixel units, and Rn represents a pixel unit shown in the figure in the nth row of the column of pixels.
- the switching elements S1, S2, S3 are in an off state, and the driving transistors T1, T2, T3 are respectively connected to the data line DL via the control switches G1, G2, G3, and generate a driving current according to the data voltage on the data line,
- the light-emitting elements OLED_R (red), OLED_G (green), and OLED_B (blue) are driven to emit light for display.
- a plurality of switching elements S1, S2, S3 corresponding to the detected pixel unit are closed.
- a driving transistor of any one of the pixel units of the detected pixel unit is driven to generate a driving current.
- the drive current is detected by the sensing line SL.
- the detecting of the driving current through the sensing line SL may include detecting a change in the voltage of the sensing line SL within a predetermined time.
- the value of the drive current is obtained according to the change of the voltage of the sensing line SL within a predetermined time.
- the driving transistors T1, T2, T3 are connected to the sensing line.
- the switching elements of the undetected pixel cells are in an off state.
- One of the control drive transistors T1, T2, T3 generates a drive current that charges a plurality of parasitic capacitances Cs connected to the sense line, and the voltage on the sense line SL gradually rises.
- the parasitic capacitance Cs is associated with a switching element connected to the sensing line SL, and is present regardless of whether the switching element is turned off.
- the array substrate includes 1920*1080 pixel units, and each pixel unit includes three sub-pixel units as an example.
- each sensing line SL there will be 3*1080 switching units connected.
- Csa will be roughly equal to 3*1080*Cs, which requires a longer charging time to get enough ⁇ V.
- Embodiments of the present disclosure provide an array substrate including: a plurality of pixel units and a sensing line.
- the pixel unit includes a drive transistor, and the sense line is configured to transmit an output of the drive transistor to the sensing device.
- the outputs of the at least two drive transistors are connected in series.
- the output terminals of adjacent drive transistors are connected in series by the first switching element.
- an output end of at least one of the driving transistors is connected to the sensing line through the second switching element.
- the number of output terminals connected to the sensing line through the second switching element may be smaller than the number of driving transistors connected in series. Furthermore, the outputs of the drive transistors that are not connected in series with one another can be directly connected to the sense line via the third switching element.
- the output end of the at least one driving transistor needs to be connected to the sensing line through the second switching element, that is, by controlling the first and second switching elements so that any of the driving transistors connected in series One is electrically connected to the sensing line. This reduces the number of switching elements that need to be directly connected to the sense line, thereby reducing the equivalent capacitance and speeding up the charging process.
- the pixel unit may include a plurality of driving transistors.
- the outputs of at least two of the drive cells in the pixel unit are connected in series.
- the output terminals of the adjacent driving transistors are connected by the first switching element.
- an output end of at least one driving transistor is connected to the sensing line through the second switching element.
- the number of output terminals connected to the sensing line through the second switching element may be smaller than the number of driving transistors connected in series. Furthermore, the output of the drive transistor which is not connected in series with each other can also be connected to the sense line via the third switching element.
- the sensing of the driving transistor is generally performed in units of pixel units, and therefore, the improvement of the connection mode in the pixel unit can reduce the switching element that needs to be directly connected to the sensing line, thereby reducing the equivalent capacitance and speeding up. Charging process.
- the output ends of all the driving transistors in the pixel unit may be connected in series by the plurality of first switching elements, and the output end of one of the pixel units passes through the second switching element and senses Wire connection. This allows only one switching element in one pixel unit to be directly connected to the sensing line.
- the array substrate 1 includes a plurality of pixel units 2, and a sensing line SL.
- the pixel unit 2 includes a driving transistor, and the sensing line SL is for transmitting the output of the driving transistor to the sensing device.
- the array substrate further includes a plurality of switching elements S1, S2, . . . , Sn configured to connect the output terminals of the driving transistors T1, T2, . . .
- Tn of the plurality of sub-pixel units in series, and then connected to the sensing line SL such that: Outputs of adjacent drive transistors (eg, between T1 and T2) are connected by a first switching element, and an output of at least one drive transistor (eg, Tn) is coupled to the sense line SL through a second switching element.
- "Adjacent" means adjacent in the series connected circuit structure, which may correspond to an adjacent position in a physical position, or may not correspond to an adjacent position in a physical position.
- the driving transistor connected to the sensing line SL may be any one of the plurality of driving transistors T1, T2, ..., Tn.
- the switching elements S1, S2, ..., Sn may be the same circuit elements. In the switching elements of this example, in order to distinguish the function of the switching elements, S1, S2, ..., Sn-1 may be referred to as a first switching element, and Sn may be used. It is called a second switching element.
- FIG. 3 is a second schematic diagram of an array substrate provided by an embodiment of the present disclosure.
- the pixel unit 2 includes a plurality of sub-pixel units.
- Each sub-pixel unit includes a drive transistor. That is, the pixel unit 2 includes a plurality of driving transistors T1, T2, ..., Tn.
- the driving transistors T1, T2, ..., Tn are arranged in the same row, however, this is not a limitation on the physical structure. In practical applications, the driving transistors may be arranged in the same column or in a shape such as a triangle, corresponding to the arrangement of the sub-pixels.
- the output terminals of the driving transistors T1, T2, ..., Tn are connected in series by a plurality of first switching elements S1, S2, ..., Sn-1, and the output terminal of the driving transistor Tn passes through the second switching element Sn and The sense line is connected.
- the sensing line SL is connected to the outermost driving transistor Tn, the number of switching elements connected to the sensing line SL can be reduced as much as possible.
- FIG. 4 is a third schematic diagram of an array substrate provided by an embodiment of the present disclosure.
- a portion of the driving transistors may be directly connected to the sensing line without being connected in series.
- T1, . . . Tn are connected in series, and Tn is connected to the sensing line through the switching element, but Tn+1 is not connected in series but is directly connected to the sensing line through the third switching element Sn+1.
- FIG. 5 is a fourth schematic diagram of an array substrate provided by an embodiment of the present disclosure.
- the array substrate 1 may include a plurality of columns of pixel units 2 and a plurality of sensing lines SL.
- One sensing line SL may be connected to one column of pixel units 2.
- FIG. 6 is a schematic circuit diagram of the array substrate shown in FIG. As shown in FIG. 6, there are 3 sub-pixel units for each pixel unit.
- the array substrate includes a plurality of columns of pixel units and a plurality of sensing lines. Wherein, one sensing line is connected to one column of pixel units.
- the pixel unit further includes first transistors G1, G2, G3 (as control switches), capacitors, and light emitting units OLED_R, OLED_G, OLED_B.
- the first transistor is coupled to the capacitor and is configured to write a data voltage to the capacitor.
- a capacitor is coupled to the drive transistors T1, T2, T3 and is configured to store a data voltage.
- the driving transistors T1, T2, T3 are connected to the light emitting units OLED_R, OLED_G, OLED_B, and are configured to drive the light emitting units OLED_R, OLED_G, OLED_B according to the data voltage Glowing.
- the light emitting units OLED_R, OLED_G, OLED_B may be organic electroluminescent units (OLEDs).
- the switching elements are switching transistors S1, S2, and S3.
- the control terminals of the switching transistors S1, S2, S3 can be applied with the same or different control voltages.
- the control terminals of the switching transistors S1, S2, S3 in one pixel unit may be connected together, controlled by the sensing control line SG, and the control terminals of the switching transistors S1', S2', S3' in the other pixel unit. Can be connected together and controlled by another sensing control line SG', which reduces the number of control lines required.
- the switching transistor S1 drives the output terminals of the transistors T1 and T2 in series
- the switching transistor S2 drives the output terminals of the transistors T2 and T3 in series
- the switching transistor S3 is connected to the output terminal of the driving transistor T3 and the sensing line SL.
- the switching transistors S1, S2 may be referred to as a first switching transistor
- the switching transistor S3 may be referred to as a second switching transistor.
- the case of using the third switching transistor is not shown in FIG. 6, but it should be understood that the output of any one of the driving transistors can be directly connected to the sensing line through the third switching transistor.
- the output terminal of the driving transistor T1 may be connected to the sensing line directly through the third switching transistor without being connected in series with the output terminals of the driving transistors T2, T3.
- the switching elements S1, S2, S3 are in an off state, and the driving transistors T1, T2, T3 are respectively connected to the data line DL via the control switches G1, G2, G3, according to the data line.
- the driving current generated by the upper data voltage drives the light emitting elements OLED_R (red), OLED_G (green), and OLED_B (blue) to emit light, thereby performing display.
- the switching elements S1, S2, S3 of the detected pixel unit are in an on state
- the driving transistors T1, T2, T3 are connected to the sensing line
- the switching elements of the undetected pixel unit are in an off state.
- One of the control drive transistors T1, T2, T3 is controlled to generate a drive current, and the remaining drive transistors are turned off.
- the value of the equivalent capacitance Csa will vary. According to the map
- the circuit structure shown in FIG. 6 is still described by taking an array substrate including 1920*1080 pixel units, and each pixel unit including three sub-pixel units as an example.
- the detected pixel unit has three switching elements connected, and the undetected pixel unit has only one switching element connected, so that 1079+3 sub-pixel units are connected to the sensing line SL.
- Csa is roughly equal to 1080*Cs+2*Cs, which greatly reduces the value of the equivalent capacitance Csa, which can speed up the charging process and meet the requirements of higher resolution and refresh frequency.
- Embodiments of the present disclosure also provide a display panel including the above array substrate.
- Embodiments of the present disclosure also provide a display device including the display panel according to the above.
- the display device can be any product or component having a display function, such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, and the like.
- the current measuring method involved in the above description includes turning on a switching element between an output end of the detected driving transistor and the sensing line such that the detected driving transistor is electrically connected to the sensing line.
- the detected drive transistor is driven to generate a drive current.
- the drive current is detected by the sensing line.
- the detecting of the driving current through the sensing line may include: detecting a change of the voltage of the sensing line within a predetermined time; obtaining a value of the driving current according to a change of the voltage of the sensing line within a predetermined time.
- the measuring method may further include: applying a reference voltage smaller than the turn-on voltage of the OLED to the output end of the detected driving transistor through the sensing line.
- the voltage across the OLED is kept below its turn-on voltage, so that the OLED remains off and the current does not pass through the OLED, which ensures the accuracy of the current measurement. It should be noted that the current required during the detection process is actually very small. After the parasitic capacitance is charged, the voltage change on the sensing line is negligible, and the OLED lighting voltage is usually not present, which can make OLEDs remain at the end.
- the current measurement speed of the driving transistor can be improved. It is to be understood that the above embodiments are merely exemplary embodiments employed to explain the principles of the present disclosure, but the present disclosure Not limited to this. Various modifications and improvements can be made by those skilled in the art without departing from the spirit and scope of the disclosure, and such modifications and improvements are also considered to be within the scope of the disclosure.
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Abstract
一种阵列基板(1)、显示面板、显示装置及电流测量方法。阵列基板(1)包括多个像素单元(2)以及感测线(SL)。像素单元(2)包括驱动晶体管(T1、T2……Tn),感测线(SL)被配置为向感测装置传输驱动晶体管(T1、T2……Tn)的输出。至少两个驱动晶体管(T1、T2……Tn)的输出端被串联在一起。在该至少两个驱动晶体管(T1、T2……Tn)中,相邻的驱动晶体管(T1、T2……Tn)的输出端通过第一开关元件(S1、S2……Sn-1)连接。在该至少两个驱动晶体管(T1、T2……Tn)中,至少一个驱动晶体管(T1、T2……Tn)的输出端通过第二开关元件(Sn)与感测线(SL)连接,能够提高驱动晶体管(T1、T2……Tn)的电流测量速度。
Description
相关申请的交叉引用
本申请要求2016年8月8日递交的中国专利申请第201610640979.8号的优先权,在此全文引用上述中国专利申请所公开的内容以作为本申请的一部分。
本公开涉及显示技术,尤其涉及阵列基板、显示面板、显示装置和电流测量方法。
在显示技术领域,有机发光二极管(Organic Light-Emitting Diode,OLED)得到了广泛应用。在显示面板中,驱动晶体管可以根据数据电压产生驱动电流来驱动有机发光二极管发光以进行显示。驱动晶体管的阈值电压会影响数据电压和驱动电流的对应关系。不同的驱动晶体管的阈值电压可能不同,并且同一驱动晶体管在不同时期的阈值电压也可能不同,因此,对于同样的数据电压,并不一定能够得到同样的驱动电流,这会导致显示面板发光不均匀。
为了使显示面板发光均匀,需要检测实际的驱动电流并调整数据电压使得实际的驱动电流等于设定的驱动电流。这需要对于实际的驱动电流进行高精度的快速检测。
发明内容
本公开的实施例提供了阵列基板、显示面板、显示装置和电流测量方法。
本公开的第一个方面提供了一种阵列基板,包括:多个像素单元以及感测线。像素单元包括驱动晶体管,感测线被配置为向感测装置传输驱动
晶体管的输出。至少两个驱动晶体管的输出端被串联在一起。在该至少两个驱动晶体管中,相邻的驱动晶体管的输出端通过第一开关元件连接。在该至少两个驱动晶体管中,至少一个驱动晶体管的输出端通过第二开关元件与感测线连接。
在本公开的实施例中,像素单元包括多个驱动晶体管。像素单元中的至少两个驱动晶体管的输出端被串联在一起。在该像素单元中的至少两个驱动晶体管中,相邻的驱动晶体管的输出端通过第一开关元件连接。在该像素单元中的至少两个驱动晶体管中,至少一个驱动晶体管的输出端通过第二开关元件与感测线连接。
在本公开的实施例中,像素单元中的所有驱动晶体管的输出端通过多个第一开关元件串联在一起,并且,像素单元中的一个驱动晶体管的输出端通过第二开关元件与感测线连接。
在本公开的实施例中,像素单元的多个第一开关元件的控制端被施加相同的控制电压。
在本公开的实施例中,像素单元的多个第一开关元件的控制端被施加不同的控制电压。
在本公开的实施例中,输出端相互串联的驱动晶体管的控制极响应于不同的控制信号。
在本公开的实施例中,像素单元还包括第一晶体管、电容以及发光单元。第一晶体管与电容连接,并被配置为将数据电压写入电容。电容与驱动晶体管连接,并被配置为存储数据电压。驱动晶体管与发光单元连接,并被配置为根据数据电压驱动发光单元发光。
在本公开的实施例中,发光单元是有机电致发光单元。
在本公开的实施例中,第一开关元件、第二开关元件是开关晶体管。
在本公开的实施例中,阵列基板包括多列像素单元以及多条感测线。其中,一条感测线与一列像素单元连接。
本公开的第二个方面提供了一种显示面板,包括上述的阵列基板。
本公开的第三个方面提供了一种显示装置,包括上述的显示面板。
本公开的第四个方面提供了一种电流测量方法,用于对上述的阵列基板的驱动晶体管输出的驱动电流进行测量,电流测量方法包括:接通被检测的驱动晶体管的输出端与感测线之间的开关元件,使被检测的驱动晶体管与感测线电连接。驱动被检测的驱动晶体管以产生驱动电流。通过感测线,对于驱动电流进行检测。
在本公开的实施例中,驱动晶体管用于驱动有机电致发光单元。测量方法还包括:通过感测线向被检测的驱动晶体管的输出端施加小于有机电致发光单元的开启电压的参考电压。
在本公开的实施例中,通过感测线,对于驱动电流进行检测包括:检测感测线的电压在预定时间内的变化。根据感测线的电压在预定时间内的变化,获得驱动电流的值。
在本公开的实施例中,驱动晶体管用于驱动OLED,测量方法包括:通过感测线向被检测的驱动晶体管的输出端施加小于OLED的开启电压的参考电压。
在本公开的实施例中,通过感测线,对于驱动电流进行检测包括:检测感测线的电压在预定时间内的变化。根据感测线的电压在预定时间内的变化,获得驱动电流的值。
根据本公开的实施例的阵列基板、显示面板、显示装置和电流测量方法,能够提高驱动晶体管的电流测量速度。
为了更清楚地说明本公开的实施例的技术方案,下面将对实施例的附图进行简要说明,应当知道,以下描述的附图仅仅涉及本公开的一些实施例,而非对本公开的限制,其中:
图1是一种能够检测驱动晶体管的电流的阵列基板的示意性的电路图;
图2是本公开的实施例提供的阵列基板的第一个示意图;
图3是本公开的实施例提供的阵列基板的第二个示意图;
图4是本公开的实施例提供的阵列基板的第三个示意图;
图5是本公开的实施例提供的阵列基板的第四个示意图;
图6是图3所示的阵列基板的一个示意性的电路图;
图7是本公开的实施例提供的电流测量方法的流程图。
为了使本公开的实施例的技术方案和优点更加清楚,下面将结合附图,对本公开的实施例的技术方案进行清楚、完整的描述。显然,所描述的实施例是本公开的一部分实施例,而不是全部的实施例。基于所描述的本公开的实施例,本领域技术人员在无需创造性劳动的前提下所获得的所有其他实施例,也都属于本公开保护的范围。
图1是一种能够检测驱动晶体管的电流的阵列基板的示意性的电路图。如图1所示,阵列基板包括像素单元以及感测线SL。像素单元包括多个子像素单元。子像素单元分别包括驱动晶体管T1、T2、T3。其中,阵列基板还包括多个开关元件S1、S2、S3。每个驱动晶体管T1、T2、T3的输出端都通过开关元件连接到感测线SL。
在阵列基板包括以矩阵排列的多个像素单元时,可以使用一条感测线SL与一列像素单元中的驱动晶体管连接,Rn表示图中所示的像素单元位于该列像素中的第n行。
在显示阶段,开关元件S1、S2、S3处于断开状态,驱动晶体管T1、T2、T3分别经控制开关G1、G2、G3连接到数据线DL,根据数据线上的数据电压产生驱动电流,以驱动发光元件OLED_R(红色)、OLED_G(绿色)、OLED_B(蓝色)发光,从而进行显示。
在电流检测阶段,闭合与被检测的像素单元对应的多个开关元件S1、S2、S3。驱动被检测的像素单元的任一子像素单元的驱动晶体管以产生驱动电流。通过感测线SL,对于驱动电流进行检测。
通过感测线SL,对于驱动电流进行检测可以包括:检测感测线SL的电压在预定时间内的变化。根据感测线SL的电压在预定时间内的变化,获得驱动电流的值。
被检测的像素单元的开关元件S1、S2、S3闭合时,驱动晶体管T1、T2、T3连接到感测线。未被检测的像素单元的开关元件处于断开状态。控制驱动晶体管T1、T2、T3中的其中一个产生驱动电流,该驱动电流对于连接到感测线的多个寄生电容Cs进行充电,感测线SL上的电压逐渐升高。根据预定时间ΔT内电压的变化量ΔV,计算得到电流I=Csa*ΔV/ΔT,其中Csa为所有寄生电容Cs的等效电容。寄生电容Cs与连接到感测线SL的开关元件相关,并且无论开关元件是否断开都会存在。
根据图1所示的电路结构,阵列基板包括1920*1080个像素单元,每个像素单元包括三个子像素单元为例,对于每一条感测线SL,将有3*1080个开关单元连接。Csa将大致等于3*1080*Cs,这需要较长的充电时间以得到足够的ΔV。
本公开的实施例提供了一种阵列基板,包括:多个像素单元以及感测线。像素单元包括驱动晶体管,感测线被配置为向感测装置传输驱动晶体管的输出。至少两个驱动晶体管的输出端被串联在一起。在该至少两个驱动晶体管中,相邻的驱动晶体管的输出端通过第一开关元件串联。在该至少两个驱动晶体管中,至少一个驱动晶体管的输出端通过第二开关元件与感测线连接。
通过第二开关元件与感测线连接的输出端的数量可以小于相互串联的驱动晶体管的数量。此外,没有相互串联的驱动晶体管的输出端可以通过第三开关元件直接与感测线连接。
相互串联的驱动晶体管中,仅需要将至少一个驱动晶体管的输出端通过第二开关元件与感测线连接,即可以通过控制第一和第二开关元件,以使得相互串联的驱动晶体管中的任一个电连接到感测线。这减少了需要直接连接到感测线的开关元件的数量,从而减小了等效电容,加快了充电过程。
在本公开的实施例中,像素单元可以包括多个驱动晶体管。像素单元中的至少两个驱动晶体管的输出端被串联在一起。在该像素单元中的至少两个驱动晶体管中,相邻的驱动晶体管的输出端通过第一开关元件连接。
在该像素单元中的至少两个驱动晶体管中,至少一个驱动晶体管的输出端通过第二开关元件与感测线连接。
通过第二开关元件与感测线连接的输出端的数量可以小于相互串联的驱动晶体管的数量。此外,没有相互串联的驱动晶体管的输出端也可以通过第三开关元件与感测线连接。
对于驱动晶体管的感测一般以像素单元为单位进行,因此,对于像素单元中的连接方式进行改进,可以减少了需要直接连接到感测线的开关元件,从而减小了等效电容,加快了充电过程。
在本公开的实施例中,像素单元中的所有驱动晶体管的输出端可以通过多个第一开关元件串联在一起,并且,像素单元中的一个驱动晶体管的输出端通过第二开关元件与感测线连接。这可以使得一个像素单元中仅有一个开关元件直接连接到感测线。
图2是本公开的实施例提供的阵列基板的第一个示意图。作为示例,如图2所示,阵列基板1包括多个像素单元2,以及感测线SL。像素单元2包括驱动晶体管,感测线SL用于向感测装置传输驱动晶体管的输出。其中,阵列基板还包括多个开关元件S1、S2……Sn,其被配置为串联多个子像素单元的驱动晶体管T1、T2……Tn的输出端,然后连接到感测线SL,使得:相邻的驱动晶体管(例如,T1、T2之间)的输出端通过第一开关元件连接,并且,至少一个驱动晶体管(例如,Tn)的输出端通过一个第二开关元件连接到感测线SL。“相邻”是指在该串联的电路结构中相邻,其可以与物理位置上的相邻相对应,也可以与物理位置上的相邻不对应。连接到感测线SL的驱动晶体管可以是多个驱动晶体管T1、T2……Tn中的任一个。开关元件S1、S2……Sn可以是相同的电路元件,在本例的开关元件中,为了区分开关元件的功能,可以将S1、S2……Sn-1称为第一开关元件,可以将Sn称为第二开关元件。
图3是本公开的实施例提供的阵列基板的第二个示意图。作为示例,如图3所示,像素单元2包括多个子像素单元。每个子像素单元包括驱动晶体管。即,像素单元2包括多个驱动晶体管T1、T2……Tn。在图3中,
为了便于描述,将驱动晶体管T1、T2……Tn排列在同一行,然而,这并不是对于物理结构的限定。在实际的应用中,对应于子像素的排列方式,驱动晶体管也可以排列在同一列,或者排列为三角形等形状。
在该像素单元2中,驱动晶体管T1、T2……Tn的输出端通过多个第一开关元件S1、S2……Sn-1串联在一起,驱动晶体管Tn的输出端通过第二开关元件Sn与感测线连接。在图3的示例中,在感测线SL与最外侧的驱动晶体管Tn连接时,可以尽可能的减少与感测线SL连接的开关元件的数量。
应当理解,图3中示出了所有驱动晶体管T1、T2……Tn的输出端都串联的情况,即,像素单元中的所有驱动晶体管的输出端通过多个第一开关元件串联在一起,并且,像素单元中的一个驱动晶体管的输出端通过第二开关元件与感测线连接。这不是必须的。
图4是本公开的实施例提供的阵列基板的第三个示意图。如图4所示,部分驱动晶体管可以不串联而直接连接到感测线。例如,T1、……Tn串联,Tn通过开关元件连接到感测线,但是,Tn+1不串联而直接通过第三开关元件Sn+1连接到感测线。这些方案都属于本公开的实施例的范围,都可以有助于减少充电所需时间。
图5是本公开的实施例提供的阵列基板的第四个示意图。阵列基板1可以包括多列像素单元2以及多条感测线SL。一条感测线SL可以与一列像素单元2连接。
图6是图3所示的阵列基板的一种示意性的电路图。如图6所示,对于每一个像素单元,都有3个子像素单元。阵列基板包括多列像素单元以及多条感测线。其中,一条感测线与一列像素单元连接。像素单元还包括第一晶体管G1、G2、G3(作为控制开关)、电容以及发光单元OLED_R、OLED_G、OLED_B。第一晶体管与电容连接,并被配置为将数据电压写入电容。电容与驱动晶体管T1、T2、T3连接,并被配置为存储数据电压。驱动晶体管T1、T2、T3与发光单元OLED_R、OLED_G、OLED_B连接,并被配置为根据数据电压驱动发光单元OLED_R、OLED_G、OLED_B
发光。发光单元OLED_R、OLED_G、OLED_B可以是有机电致发光单元(OLED)。
如图6所示,开关元件是开关晶体管S1、S2、S3。开关晶体管S1、S2、S3的控制端可以被施加相同或者不同的控制电压。例如,一个像素单元中的开关晶体管S1、S2、S3的控制端可以连接在一起,由感测控制线SG控制,而另一个像素单元中的开关晶体管S1’、S2’、S3’的控制端可以连接在一起,由另一条感测控制线SG’控制,这样可以减少需要的控制线的数量。开关晶体管S1串联驱动晶体管T1和T2的输出端,开关晶体管S2串联驱动晶体管T2和T3的输出端,开关晶体管S3连接驱动晶体管T3的输出端和感测线SL。开关晶体管S1、S2可以被称为第一开关晶体管,开关晶体管S3可以被称为第二开关晶体管。图6中未示出使用第三开关晶体管的情况,但是应当理解的是任一个驱动晶体管的输出端均可以直接通过第三开关晶体管连接至感测线。例如,驱动晶体管T1的输出端可以不与驱动晶体管T2、T3的输出端串联而直接通过第三开关晶体管连接至感测线。
在显示阶段,与图1所示的电路相同,开关元件S1、S2、S3处于断开状态,驱动晶体管T1、T2、T3分别经控制开关G1、G2、G3连接到数据线DL,根据数据线上的数据电压产生的驱动电流,以驱动发光元件OLED_R(红色)、OLED_G(绿色)、OLED_B(蓝色)发光,从而进行显示。
在电流检测阶段,被检测的像素单元的开关元件S1、S2、S3处于导通状态,驱动晶体管T1、T2、T3连接到感测线,未被检测的像素单元的开关元件处于断开状态。控制驱动晶体管T1、T2、T3中的其中一个产生驱动电流,并关断其余驱动晶体管。该驱动电流对于连接到感测线的多个寄生电容Cs进行充电,感测线SL上的电压逐渐升高。根据预定时间ΔT内电压的变化量ΔV,计算得到电流I=Csa*ΔV/ΔT,其中Csa为所有寄生电容Cs的等效电容。
与图1所示的电路不同的是,等效电容Csa的值将产生变化。根据图
6所示的电路结构,仍然以阵列基板包括1920*1080个像素单元,每个像素单元包括三个子像素单元为例进行说明。对于感测线SL,被检测的像素单元有3个开关元件连接,未被检测的像素单元仅有1个开关元件连接,因此将有1079+3个子像素单元连接到感测线SL。Csa大致等于1080*Cs+2*Cs,这极大的减小等效电容Csa的值,能够加速充电过程,满足更高分辨率和刷新频率的要求。
本公开的实施例还提供了一种显示面板,包括上述的阵列基板。
本公开的实施例还提供了一种显示装置,包括根据上述的显示面板。显示装置可以为:手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
图7是本公开的实施例提供的电流测量方法的流程图。如图7所示,上述描述中涉及的电流测量方法包括:接通被检测的驱动晶体管的输出端与感测线之间的开关元件,使得被检测的驱动晶体管与感测线电连接。驱动被检测的驱动晶体管以产生驱动电流。通过感测线,对于驱动电流进行检测。
通过感测线,对于驱动电流进行检测可以包括:检测感测线的电压在预定时间内的变化;根据感测线的电压在预定时间内的变化,获得驱动电流的值。
此外,如上所述,驱动晶体管用于驱动OLED时,测量方法还可以包括:通过感测线向被检测的驱动晶体管的输出端施加小于OLED的开启电压的参考电压。在测量过程中,保持OLED两端的电压小于其开启电压,使得OLED保持截止,电流不会经过OLED,这可以保证电流测量的准确性。需要说明的是,在检测过程中所需要的电流实际上非常微小,对寄生电容进行充电后,感测线上的电压变化可以忽略不计,通常不会出现达到OLED发光电压的情况,这可以使得OLED保持截至。
根据本公开的实施例的阵列基板、显示面板及显示装置、以及电流测量方法,能够提高驱动晶体管的电流测量速度。可以理解的是,以上实施方式仅仅是为了说明本公开的原理而采用的示例性实施方式,然而本公开
并不局限于此。对于本领域内的普通技术人员而言,在不脱离本公开的精神和实质的情况下,可以做出各种变型和改进,这些变型和改进也视为本公开的保护范围。
Claims (15)
- 一种阵列基板,包括:多个像素单元以及感测线;所述像素单元包括驱动晶体管,所述感测线被配置为向感测装置传输驱动晶体管的输出;其中,至少两个驱动晶体管的输出端被串联在一起;其中,在所述至少两个驱动晶体管中,相邻的驱动晶体管的输出端通过第一开关元件连接;并且,其中,在所述至少两个驱动晶体管中,至少一个驱动晶体管的输出端通过第二开关元件与感测线连接。
- 根据权利要求1所述的阵列基板,其中,所述像素单元包括多个驱动晶体管;其中,像素单元中的至少两个驱动晶体管的输出端被串联在一起;其中,在所述像素单元中的至少两个驱动晶体管中,相邻的驱动晶体管的输出端通过第一开关元件连接;并且,其中,在所述像素单元中的至少两个驱动晶体管中,至少一个驱动晶体管的输出端通过第二开关元件与感测线连接。
- 根据权利要求2所述的阵列基板,其中,像素单元中的所有驱动晶体管的输出端通过多个第一开关元件串联在一起,并且,像素单元中的一个驱动晶体管的输出端通过第二开关元件与感测线连接。
- 根据权利要求3所述的阵列基板,其中,像素单元的所述多个第一开关元件的控制端被施加相同的控制电压。
- 根据权利要求3所述的阵列基板,其中,像素单元的所述多个第一开关元件的控制端被施加不同的控制电压。
- 根据权利要求1至5任一项所述的阵列基板,其中,输出端相互串联的驱动晶体管的控制极响应于不同的控制信号。
- 根据权利要求1所述的阵列基板,所述像素单元还包括第一晶体管、电容以及发光单元;所述第一晶体管与所述电容连接,并被配置为将数据电压写入所述电容;所述电容与所述驱动晶体管连接,并被配置为存储所述数据电压;所述驱动晶体管与所述发光单元连接,并被配置为根据所述数据电压驱动所述发光单元发光。
- 根据权利要求7所述的阵列基板,所述发光单元是有机电致发光单元。
- 根据权利要求1所述的阵列基板,其中,所述第一开关元件、所述第二开关元件是开关晶体管。
- 根据权利要求1所述的阵列基板,其中,所述阵列基板包括多列像素单元以及多条感测线;其中,一条感测线与一列像素单元连接。
- 一种显示面板,包括根据权利要求1至10中任一项所述的阵列基板。
- 一种显示装置,包括根据权利要求11所述的显示面板。
- 一种电流测量方法,用于对权利要求1所述的阵列基板的驱动晶体管输出的驱动电流进行测量,所述电流测量方法包括:接通被检测的驱动晶体管的输出端与感测线之间的开关元件,使被检测的驱动晶体管与感测线电连接;驱动被检测的驱动晶体管以产生驱动电流;通过所述感测线,对于所述驱动电流进行检测。
- 根据权利要求13所述的电流测量方法,其中,所述驱动晶体管用于驱动有机电致发光单元;所述测量方法还包括:通过感测线向被检测的驱动晶体管的输出端施加小于有机电致发光单元的开启电压的参考电压。
- 根据权利要求13所述的电流测量方法,其中,通过所述感测线,对于所述驱动电流进行检测包括:检测所述感测线的电压在预定时间内的变化;根据所述感测线的电压在预定时间内的变化,获得驱动电流的值。
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| CN106373512B (zh) * | 2016-11-02 | 2018-05-11 | 深圳市华星光电技术有限公司 | 一种基于oled的感测电路及感测方法 |
| CN106448552B (zh) * | 2016-11-29 | 2018-11-23 | 京东方科技集团股份有限公司 | 显示基板、显示装置及显示控制方法 |
| CN107016964B (zh) | 2017-04-25 | 2020-07-07 | 京东方科技集团股份有限公司 | 像素电路、其驱动方法和显示装置 |
| TWI635474B (zh) * | 2018-02-09 | 2018-09-11 | 友達光電股份有限公司 | 顯示裝置及其畫素偵測方法 |
| CN108520716B (zh) | 2018-04-12 | 2019-10-01 | 京东方科技集团股份有限公司 | 一种像素电路单元及驱动方法、显示面板、显示装置 |
| CN110570809B (zh) * | 2019-09-10 | 2021-04-16 | 成都辰显光电有限公司 | 一种显示面板和显示面板的测试方法 |
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