WO2018012086A1 - Light emitting element, light emitting device, lighting device, backlight and display device - Google Patents

Light emitting element, light emitting device, lighting device, backlight and display device Download PDF

Info

Publication number
WO2018012086A1
WO2018012086A1 PCT/JP2017/016569 JP2017016569W WO2018012086A1 WO 2018012086 A1 WO2018012086 A1 WO 2018012086A1 JP 2017016569 W JP2017016569 W JP 2017016569W WO 2018012086 A1 WO2018012086 A1 WO 2018012086A1
Authority
WO
WIPO (PCT)
Prior art keywords
light emitting
emitting element
length
semiconductor core
light
Prior art date
Application number
PCT/JP2017/016569
Other languages
French (fr)
Japanese (ja)
Inventor
佐藤　拓也
吐田　真一
柴田　晃秀
岩田　浩
Original Assignee
シャープ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by シャープ株式会社 filed Critical シャープ株式会社
Publication of WO2018012086A1 publication Critical patent/WO2018012086A1/en

Links

Images

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20—Light sources comprising attachment means
    • F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
    • F21K9/232—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S2/00—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • the present invention relates to a light-emitting element such as an LED, in particular, a micro-device configured to emit light between a first-conductivity-type semiconductor core and a second-conductivity-type semiconductor disposed around the outer peripheral surface of the semiconductor core.
  • the present invention relates to a light-emitting element having an order size or a nano-order size, a light-emitting device including the light-emitting element, and an illumination device, a backlight, and a display device including the light-emitting device.
  • Patent Document 1 discloses a light-emitting device 100 having a cross-sectional structure shown in FIGS. 39 and 40 are disclosed as Japanese Patent Application Laid-Open Nos. 2015-126048 as FIGS.
  • the light emitting element 10 included in the light emitting device 100 includes a first conductive type semiconductor core 12, a light emitting layer 14, and a second conductive type semiconductor layer 16.
  • the semiconductor core 12 has a rod shape having a regular hexagonal cross section, that is, a regular hexagonal column shape.
  • the light emitting layer 14 is disposed around the central axis CL of the semiconductor core 12 and is in contact with the six side surfaces 12 ⁇ / b> A constituting the outer peripheral surface of the semiconductor core 12.
  • the semiconductor layer 16 is disposed around the central axis CL and is in contact with the light emitting layer 14. Further, the transparent conductive film 30 covers the outside of the semiconductor layer 16.
  • the transparent conductive film 30 is removed from the light emitting layer 14 over about a half circumference of the light emitting element 10, and the semiconductor core 12 is exposed in a direction perpendicular to the central axis CL.
  • the light emitting device 100 further includes a protective film 40 and metal wirings 50 and 60.
  • Each of the wirings 50 and 60 includes contact metals 50B and 60B located in the contact holes 40A and 40B formed in the protective film 40, respectively.
  • the contact metal 50B is in contact with the exposed portion of the semiconductor core 12, and the contact metal 60B is in contact with the transparent conductive film 30.
  • the outer peripheral surface of the light emitting element emits light over the entire circumference (except for the portion corresponding to the exposed portion of the semiconductor core 12). Accordingly, there is an advantage that the light emitting area can be widened as compared with a planar light emitting element that emits light only on one plane.
  • the contact process that is, The process for wiring the light emitting element includes patterning for forming a contact hole, etching for forming a contact hole, deposition of a conductive material in the contact hole, etc.). Therefore, high accuracy (alignment accuracy, etc.) is required in the contact process when manufacturing the light emitting device, and there is a problem that it is difficult to improve the yield.
  • a light emitting element configured to emit light between the first conductive type semiconductor core and the second conductive type semiconductor disposed around the outer peripheral surface of the semiconductor core is equivalent to a conventional bar light emitting element. Even if the light emitting area is, a configuration that can increase the tolerance in the contact process is required.
  • the contact area between the semiconductor core 12 and the wiring 50 corresponds to that.
  • the contact resistance between the semiconductor core 12 and the contact metal 50B may become so large that it is not negligible (for example, 0.1 to 50 ⁇ m 2 ).
  • a large contact resistance leads to a decrease in light emission efficiency and an increase in power consumption.
  • the contact area of a normal LED that emits light only in one plane, not in a rod shape is about 3 ⁇ 10 3 ⁇ m 2 .
  • Patent Document 2 discloses that a semiconductor core of a first conductivity type (n-type) extends from one surface of a base portion of a first conductivity type made of the same semiconductor material as the semiconductor core.
  • a second conductivity type (p-type) semiconductor is formed on the entire outer peripheral surface of the core, but no second conductivity type semiconductor is formed around the outer peripheral surface (side surface) of the base.
  • Is used as the cathode electrode K, and a rod-like light emitting element provided so that the contact metal of the wiring contacts the side surface of the base is disclosed (see FIGS. 9 and 17 of Patent Document 2).
  • the contact metal of the wiring is provided so as to contact the side surface of the base portion, not the outer peripheral surface (side surface) of the semiconductor core.
  • the side surface of the base is flush with the side surface of the transparent conductive film that covers the second conductivity type semiconductor.
  • Patent Document 2 further discloses that the first conductivity type semiconductor core has a square cross section, and the cross section has a short side and a long side in order to increase the light emission amount, in other words, the light emission area in the configuration including such a base. It discloses that it has a rectangular plate shape.
  • the contact metal of the wiring contacts the base portion, not the outer peripheral surface (side surface) of the semiconductor core. Therefore, although not specified in Patent Document 2, it is considered that there is an advantage that the contact area with the contact metal can be adjusted by adjusting the size of the base.
  • the base does not contribute to the light emission at all. That is, the entire length of the light emitting element is not effectively used from the viewpoint of increasing the light emitting area. Further, since there is no second conductivity type semiconductor around the base of the first conductivity type, the current direction during driving is changed so as to flow from the p-type semiconductor to the n-type semiconductor as compared with the configuration of Patent Document 1. A circuit to control is required.
  • an object of the present invention is to provide a contact process for a light emitting element configured to emit light between a first conductivity type semiconductor core and a second conductivity type semiconductor disposed around the outer peripheral surface of the semiconductor core. Tolerance can be increased compared to a rod-shaped light emitting element having an equivalent light emitting area, and therefore, such a light emitting element, a light emitting device including the light emitting element, and a lighting device including the light emitting device, a backlight, and In addition to improving the yield of display devices, the contact resistance between the semiconductor core and the contact metal is reduced compared to a rod-like light emitting element having the same light emitting area, thereby improving the light emitting efficiency and reducing the power consumption. It is.
  • a light-emitting element includes: A first-conductivity-type semiconductor core having an outer peripheral surface composed of two end portions facing each other in the first direction and two or more side surfaces between the end portions; and disposed around the outer peripheral surface of the semiconductor core.
  • At least one of the side surfaces of the semiconductor core is covered with the semiconductor layer.
  • Another side surface is a light emitting device having an exposed portion that is exposed without being covered by the semiconductor layer,
  • the cross section of the semiconductor core orthogonal to the first direction has a length L1 in the second direction and a length L2 in the third direction orthogonal to the second direction.
  • the exposed portion of the semiconductor core has a length L3 in the second direction and a length L4 in the first direction, and the length L3 is a length in the second direction of the cross section of the semiconductor core.
  • the length is 60% to 100% of the length L1.
  • the “length” in the second direction and the third direction of the cross-section of the semiconductor core is the length of the longest portion in each direction.
  • the “length” of the exposed portion of the semiconductor core in the first and second directions is the length of the longest portion in each direction.
  • L1 2 ⁇ L2 ⁇ L1, that is, the reason why L1 is set to be twice or more of L2 is that if it is less than that, the intended effect of the present invention of increasing tolerance and reducing contact resistance cannot be obtained.
  • the semiconductor core may be a plate core whose cross section is polygonal or elliptical.
  • the “side surface” constituting the “outer peripheral surface” of the semiconductor core means each surface connected at an angle between the two end portions when the cross section is a polygonal shape.
  • the cross section is elliptical, it means two surfaces facing each other in the second direction between the two end portions.
  • ellipse includes not only an ellipse in a mathematically exact sense but also an elongated circle similar to an ellipse.
  • the semiconductor core may have a length L5 in the first direction, and L5 ⁇ L1.
  • the length L2 in the third direction and the length L1 in the second direction of the cross section of the semiconductor core are preferably in the range of 100 nm to 20 ⁇ m and 300 nm to 500 ⁇ m, respectively. More preferably, the cross-sectional lengths L2 and L1 are in the range of 300 nm to 15 ⁇ m and 1 ⁇ m to 200 ⁇ m, respectively, and more preferably in the range of 500 nm to 10 ⁇ m and 3 ⁇ m to 100 ⁇ m, respectively.
  • the length L3 in the second direction and the length L4 in the first direction of the exposed portion are preferably in the range of 300 nm to 500 ⁇ m. More preferably, the length L3 and the length L4 of the exposed portion are in the range of 1 ⁇ m to 200 ⁇ m, and more preferably in the range of 3 ⁇ m to 100 ⁇ m.
  • a light-emitting device includes: A substrate, A plurality of light-emitting elements mounted on the substrate; A wiring electrically connected to the light emitting element, The light emitting device according to any one of claims 1 to 5, further comprising a conductive film covering the semiconductor layer of the second conductivity type, The wiring includes a first wiring having a contact metal in contact with an exposed portion of the semiconductor core of the light emitting element and a second wiring having a contact metal in contact with the conductive film.
  • An illumination device includes the light emitting device.
  • a backlight according to an embodiment of the present invention includes the light emitting device.
  • a display device includes the light emitting device.
  • the display device includes various types.
  • the display device may be a liquid crystal display device using the light emitting device as a backlight, or an LED display in which each light emitting element included in the light emitting device is used as a pixel LED constituting a pixel. Also good.
  • the display device may be a see-through type with a transparent display unit.
  • the display device may be a glasses type.
  • the cross section is long.
  • the length L3 of the exposed portion of the semiconductor core is 60% to 100% of the length L1 in the second direction of the cross section of the light emitting element, it is a thin shape.
  • the tolerance for the contact process to the light emitting device can be increased by a substantial amount without substantially changing the light emitting area, and the light emitting device and the light emitting device can be used.
  • the yield of the light emitting device and the lighting device, backlight, and display device provided with the light emitting device can be improved.
  • the contact area between the contact metal and the exposed portion of the semiconductor core is smaller than that of the conventional light emitting device using a fine rod-shaped core as disclosed in Patent Document 1. Since it is possible to increase the contact resistance, the contact resistance can be reduced accordingly, and the light emission efficiency can be improved and the power consumption can be reduced. Therefore, also in a lighting device, a backlight, and a display device provided with this light emitting device, it is possible to improve luminous efficiency and reduce power consumption.
  • the exposed portion that contacts the contact metal of the wiring is only a part of the outer peripheral surface of the semiconductor core, and the other portion of the outer peripheral surface is covered with the semiconductor layer of the second conductivity type.
  • the plate-like structure of Patent Document 2 it is possible to reduce the size of the light emitting element even with the same light emitting area and the same contact area, and a circuit for controlling the current direction during driving is unnecessary. is there.
  • FIG. 1 is a schematic perspective view of a light emitting device according to a first embodiment.
  • FIG. 2 is a sectional view taken along line II-II in FIG.
  • FIG. 3 is a sectional view taken along line III-III in FIG. 1.
  • FIG. 4 is a sectional view taken along line IV-IV in FIG. 1. It is a figure which shows the alternative example of the outline shape of the cross section of the light emitting element shown by FIG. It is the figure which compared the contact area of the conventional light emitting element with the contact area of an example of the light emitting element which concerns on 1st Embodiment.
  • FIG. 5 is a diagram for explaining one of manufacturing steps of a light emitting device including the light emitting element shown in FIGS.
  • FIG. 8A and 8B are diagrams illustrating a process subsequent to the process of FIG. 7, in which FIG. 7A illustrates a cross section cut along the xz plane (hereinafter, xz cross section), and FIG. 7B illustrates a cross section cut along the yz plane (hereinafter referred to as the yz cross section).
  • xz cross section a cross section cut along the xz plane
  • yz cross section a cross section cut along the yz plane
  • FIG. 16 is a diagram showing a step that follows the step of FIG. 15 and shows a cross-section corresponding to FIG. 2.
  • FIG. 16 is a diagram showing a step that follows the step of FIG. 15, and shows a cross section corresponding to FIG. 3.
  • FIG. 16 is a diagram showing a step that follows the step of FIG. 15 and shows a cross-section corresponding to FIG. 4. It is a figure which shows the process following the process of FIG. 17 (FIG. 18, FIG. 19). It is drawing corresponding to FIG.
  • FIG. 13 for demonstrating the modification of the light emitting element which concerns on 1st Embodiment
  • (A) shows xz cross section
  • (B) shows yz cross section
  • (C) shows xy cross section.
  • FIG. 5 shows the alternative example of the outline shape of the cross section of the light emitting element shown by FIG.21 (C).
  • the alternative example of the profile shape of the cross section shown by FIG. 13 (A) and FIG. 21 (A) is shown.
  • An alternative example of the profile of the cross section shown in FIGS. 13B and 21B is shown. It is a chart which shows the effect of a 1st embodiment. It is a top view of the light-emitting device used for the illuminating device of 2nd Embodiment.
  • FIG. 32 is a side view of a liquid crystal panel as an example of a display device different from that in FIG. 31.
  • FIG. 1 of Patent Document 1 is shown.
  • FIG. 2 of Patent Document 1 is shown.
  • FIGS. 1 to 5 are views for explaining the structure of the light emitting device 200 in the first embodiment.
  • FIG. 6 shows a contact area of a conventional bar light emitting device and a contact area of an example of the light emitting device according to the first embodiment.
  • 7 to 20 are diagrams illustrating a manufacturing process of a light emitting device including the light emitting element 200
  • FIG. 21 is a diagram illustrating a modification of the light emitting element 200.
  • 22 to 24 are diagrams showing alternative examples of contour shapes of various cross sections of the light emitting element 200.
  • the light emitting device 200 includes an n-type semiconductor core 201 as a first conductivity type, an active layer 202, a p-type semiconductor layer 203 as a second conductivity type, and a transparent conductivity as a conductive layer. And a film 204.
  • the first conductivity type is n-type and the second conductivity type is p-type.
  • the first conductivity type is p-type
  • the second conductivity type is n-type
  • the light emitting element 200 is an n-type semiconductor core.
  • a p-type semiconductor core may be provided, and instead of the p-type semiconductor layer 203, an n-type semiconductor layer may be provided.
  • the group V may contain As, P, or Sb, or may be a group IV semiconductor such as Si or Ge, or a group II-VI semiconductor such as ZnO or ZnSe.
  • a material of the transparent conductive film 204 for example, ITO, ZnO, SnO, or the like can be used. Of course, materials known to those skilled in the art can be appropriately used even if they are not listed here. Since the essence of this embodiment is not in the material of the light emitting element itself, the material of the light emitting element illustrated here should not be understood as limiting the present invention.
  • the semiconductor core 201 has two end portions (end surfaces) 2011 and 2012 that face each other in the z direction as the first direction, and an outer peripheral surface 2013 between these end portions.
  • the semiconductor core 201 has a hexagonal xy cross section (a cross section perpendicular to the z direction) in which two opposite sides at the center are longer than the other sides. That is, the semiconductor core 201 has a side surface 2013a corresponding to the two long sides of the xy cross section and a side surface 2013b corresponding to the remaining four sides, and these six side surfaces 2013a and 2013b are the outer peripheral surface 2013. Is configured.
  • one of the side surfaces 2013 a of the semiconductor core 201 is exposed without being covered with the active layer 202, the semiconductor layer 203, and the transparent conductive film 204 at a position close to the end portion 2012.
  • An exposed portion 205 is formed. All of the outer peripheral surface 2013 of the semiconductor core 201 excluding the exposed portion 205 is covered with the active layer 202, the semiconductor layer 203, and the transparent conductive film 204, and the active layer 202 between the semiconductor core 201 and the semiconductor layer 203 is formed. Acts as a light emitting layer.
  • the xy section of the semiconductor core 201 has a length L1 in the y direction as the second direction and a length L2 in the x direction as the third direction.
  • the length L1 is in the range of 2 ⁇ L2 ⁇ L1 ⁇ 1000 ⁇ L2, and has a horizontally long shape as viewed in FIGS.
  • the outer peripheral surface 2013 has a length L5 in the z direction.
  • the semiconductor core 201 has a thin plate-like shape that is defined by a length L1 in the y direction, a length L2 in the x direction, and a length L5 in the z direction, and the xy cross section is a long and narrow hexagon (however, the exposed portion 205 , The length in the x direction may be as small as half of L2.)
  • the range of the length L1 in the y direction of the xy section is preferably 10 ⁇ L2 ⁇ L1 ⁇ 200 ⁇ L2 when the length L2 in the x direction is 500 nm, for example, and when L2 is 1 ⁇ m. Is preferably 5 ⁇ L2 ⁇ L1 ⁇ 100 ⁇ L2.
  • the preferable range of L1 is determined within the range of 2 ⁇ L2 ⁇ L1 ⁇ 1000 ⁇ L2 by the specific value of L2.
  • the length L2 of the semiconductor core 201 in the x direction is preferably in the range of 100 nm to 20 ⁇ m, more preferably 300 nm to 15 ⁇ m, and still more preferably 500 nm to 10 ⁇ m.
  • the reason why the length L2 in the x direction is set to 300 nm or more is to reduce the stability due to the shift in the etching amount when contacting the n layer and the resistivity against the current flowing in the n-type semiconductor. Further, the reason why the length L2 in the x direction is set to 20 ⁇ m or less is that when the length is longer than this, there is a large level difference when arranged on another substrate, and the yield in the contact process is significantly deteriorated.
  • the actual numerical range is determined according to the length of L2. It is preferable to set so as to fall within the range of 300 nm to 500 ⁇ m. More preferably, it is 1 ⁇ m to 200 ⁇ m, and still more preferably 3 ⁇ m to 100 ⁇ m.
  • the exposed portion 205 of the semiconductor core 201 has a length L3 in the y direction and a length L4 in the z direction.
  • the length L4 of the exposed portion 205 in the z direction is usually less than or equal to half the length L5 of the semiconductor core 201 in the z direction.
  • the length L3 of the exposed portion 205 in the y direction is 60% to 100% of the length L1 of the semiconductor core 201 in the y direction, more preferably 70% to 100%, and still more preferably 80% to 100%. %.
  • the exposed portion 205 is not limited to a quadrangle, and may be any shape such as a rounded quadrangle, a polygon, or a circle.
  • the light emitting area of the light emitting element 200 is determined by the area of the portion covered by the light emitting layer 202 and the semiconductor layer 203 out of the total surface area of the semiconductor core 201.
  • the end face of the semiconductor core is exposed, and the area of the end face is much smaller than the area of the outer peripheral face (all the side faces). Therefore, it is the area of the outer peripheral surface 2013 of the semiconductor core 201 that greatly affects the light emitting area.
  • the length of the short side of the elongated hexagon that is the xy cross-sectional shape of the semiconductor core 201 is the same as the length of one side of the regular hexagon, the length of the long side is 2 ⁇ L2 ⁇ L1 ⁇ 1000.
  • the semiconductor core 201 Since the length of one side of the regular hexagon can be longer than the length of one side of the regular hexagon within a range satisfying the condition of ⁇ L2, if the length of the semiconductor core in the z direction is constant, the semiconductor core 201 is compared with a rod-shaped semiconductor core having a regular hexagonal cross section. The area of the outer peripheral surface 2013 increases. On the other hand, since the length L3 of the exposed portion 205 of the semiconductor core 201 is 60% to 100% of the length L1 in the y direction of the xy cross section of the light emitting element 200, the length L4 of the exposed portion 205 in the z direction.
  • the area of the exposed portion 205 of the semiconductor core 201 is larger than that of the conventional semiconductor core.
  • the area of the outer peripheral surface 2013 of the semiconductor core 201 that contributes to the light emission area is reduced by the amount by which the area of the exposed portion 205 is increased compared to the conventional bar light emitting element, the light emitting area is equal to or larger than that of the conventional bar light emitting element. Is obtained.
  • the length L3 in the y direction of the exposed portion 205 of the semiconductor core 201 can be significantly longer than that of the conventional rod-shaped core. Therefore, according to the present invention, compared with the conventional light emitting device having a rod-shaped core disclosed in Patent Document 1, the tolerance for the contact process to the light emitting device can be reduced without substantially changing the light emitting area. Therefore, the yield of the light-emitting elements can be improved.
  • the size of the light emitting element can be reduced even with the same light emitting area and the same contact area.
  • FIG. 6A and 6B are schematic perspective views for comparing a conventional bar-shaped light emitting device and the light emitting device according to the present embodiment.
  • FIG. 6A is a conventional bar-shaped light emitting device
  • FIGS. 1 shows an example of a light emitting element according to the above.
  • the rod-shaped light emitting element shown in (A) has a side of 2 ⁇ m and a length in the z direction of 50 ⁇ m.
  • the light emitting element according to this embodiment shown in FIG. 5B has a short side of 1 ⁇ m, a long side of 4 ⁇ m, and a length in the z direction of 50 ⁇ m.
  • the light emitting device 200 shown in FIGS. 1 to 5 includes an active layer 202 as a light emitting layer between a semiconductor core 201 and a semiconductor layer 203.
  • the active layer 202 may be a multilayer quantum well layer in which barrier layers and quantum well layers are alternately stacked, or may be a single quantum well layer.
  • the barrier layer is, for example, GaN.
  • the quantum well layer is, for example, InGaN. The composition ratio of In and Ga is appropriately set according to the target wavelength of light.
  • the active layer 202 is not necessarily provided. However, since the active layer 202 confines bipolar carriers (holes and electrons) in a narrow range to increase the recombination probability, the luminous efficiency can be increased as compared with the case where the active layer 202 is not provided.
  • the shape of the xy cross section of the semiconductor core 201 is a hexagonal shape with two long opposite sides at the center.
  • FIG. 5 shows an example of the shape of another xy cross-section in place of the hexagonal shape, where (A) is a long rectangle, (B) is an ellipse, and (C) is a dodecagon.
  • the xy cross section may have other elongated shapes.
  • an isosceles triangle in which the relationship between the base L1 and the height L2 satisfies 2 ⁇ L2 ⁇ L1 ⁇ 1000 ⁇ L2 may be used. That is, as long as 2 ⁇ L2 ⁇ L1 ⁇ 1000 ⁇ L2 is satisfied, the xy cross section may have any shape.
  • n-type GaN is used as the material of the n-type semiconductor core 201
  • InGaN / GaN constituting the multiple quantum well is used as the material of the active layer 202
  • p-type AlGaN and p-type are used as the material of the p-type semiconductor layer 203.
  • GaN two-layer structure
  • transparent conductive film (conductive layer) 204 is used as the material of the transparent conductive film (conductive layer) 204, but as described above, these materials are not limited, and other materials may be used. Good.
  • an n-type GaN film 201 ⁇ / b> A is formed on the main surface of a sapphire substrate (hereinafter also simply referred to as “substrate”) 210.
  • the thickness of the n-type GaN film 201A is, for example, 30 ⁇ m.
  • Examples of the method for forming the n-type GaN film 201A include HVPE (Hydride (Vapor Phase Epitaxy) method, MOCVD (Metal Organic Chemical Vapor Deposition) method, MBE (Molecular Beam Epitaxy) method and the like.
  • This n-type GaN film 201A is processed to finally become the semiconductor core 201.
  • a plurality of plate-like masks 220 that are long in the y direction are formed on the n-type GaN film 201A.
  • the mask 220 is a silicon oxide (SiO 2 ) film.
  • the mask 220 is formed as follows. First, a silicon oxide film is formed on the entire surface of the n-type GaN film 201A. Examples of the method for forming the silicon oxide film include a plasma CVD (Chemical Vapor Deposition) method and a sputtering method. The silicon oxide film formed on the entire surface of the n-type GaN film 201A is patterned by photolithography.
  • the pattern of the mask 220 determines the shape of the xy cross section of the semiconductor core 201 and can be various polygonal shapes or elliptical shapes as described above. Here, the two opposite sides at the center shown in FIG. The hexagon is longer than the side.
  • the n-type GaN film 201A is etched by reactive ion etching (a kind of dry etching). As a result, as shown in FIG. 9, a plurality of plate-like n-type GaN films 201B (only three are shown in FIG. 9) are formed. At this stage, the mask 220 remains.
  • As an etching gas for example, there is a mixed gas of chlorine gas (Cl 2 ) and argon gas (Ar).
  • the volume ratio of chlorine gas and argon gas is, for example, 2: 3.
  • the length in the z direction of the plate-like n-type GaN film 201B is, for example, 30 ⁇ m.
  • the side surface of the plate-like n-type GaN film 201B is etched by wet etching.
  • the etching solution is, for example, an aqueous tetramethylammonium hydroxide (TMAH) solution (mass percent concentration: 5%) heated to 70 ° C.
  • TMAH aqueous tetramethylammonium hydroxide
  • the etching time is, for example, 3 hours.
  • TMAH aqueous tetramethylammonium hydroxide
  • the side surface of the n-type GaN film 201B can be made vertical. If the same etching is performed without using the mask 220, the side surface is not vertical and a tapered structure is formed.
  • FIG. 11 shows a state after the mask 220 is removed.
  • the side surface of the columnar n-type GaN film 201B is perpendicular to the substrate 210, but there are irregularities on the surface.
  • an n-type GaN layer is formed on the n-type GaN film 201B using an MOCVD apparatus. Thereby, the semiconductor core 201 is completed.
  • the substrate temperature (growth temperature) when forming the n-type GaN layer is, for example, 850 to 1100 degrees.
  • a multi-quantum well layer in which InGaN (well layers) and GaN (barrier layers) are alternately stacked is formed as the active layer 202 using the MOCVD apparatus.
  • the substrate temperature (growth temperature) when forming the multiple quantum well layer is, for example, 650 to 850 degrees.
  • FIG. 12 shows a state after the p-type semiconductor layer 203 is formed.
  • an ITO film is formed on the p-type GaN layer constituting the p-type semiconductor layer 203.
  • the transparent conductive film 204 is formed on the surface of the p-type GaN layer.
  • the upper surface (the portion on the opposite side of the substrate 210) may be cut by CMP or the like, and the light emitting surface may be limited to the side surface. Further, the light emitting surface can be limited to the side surface by performing this process without removing the mask 220. Of course, this is not necessary when the light emitting surface is not limited to the side surface.
  • a plurality of plate-like light emitting elements (before forming the exposed portion 205 of the semiconductor core 201) 200 ⁇ / b> A is separated from the sapphire substrate 210.
  • a plurality of plate-like light emitting elements 200A are embedded in an organic film (for example, wax).
  • laser is irradiated from the back surface of the sapphire substrate 210.
  • the interface between the sapphire substrate 210 and the semiconductor core 201 is melted, and the plurality of plate-like light emitting elements 200A are peeled from the substrate 210 (laser lift-off).
  • the sapphire substrate 210 is put into an acetone solution to dissolve the organic film.
  • the plurality of plate-like light emitting elements 200 ⁇ / b> A are separated from the sapphire substrate 210.
  • the plurality of light emitting elements 200A are precipitated by a centrifuge, and the supernatant is removed.
  • acetone is added, and the above treatment is repeated, and the components of the organic film are removed from the acetone solution containing the plurality of light emitting elements 200A.
  • the solution containing the plurality of light emitting elements 200A is replaced with isopropyl alcohol (IPA) from the acetone solution.
  • IPA isopropyl alcohol
  • the method of separating the plurality of light emitting elements 200A from the sapphire substrate 210 may be, for example, a method of folding each light emitting element 200A from the root using ultrasonic waves or the like.
  • a light emitting element 200A is placed on a glass substrate 301 on which light emitting element placement electrodes 311 and 321 are formed.
  • the plurality of light-emitting elements 200A are arranged in two regions.
  • six light emitting elements 200A are arranged in one area, but the number of light emitting elements 200A arranged in one area and the number of arrangement areas are arbitrary.
  • another insulating substrate having translucency may be used.
  • it is not necessary to use a light-transmitting substrate, and a glass substrate, a semiconductor substrate, or the like on which a metal for light reflection is formed may be used.
  • FIG. 15A shows the glass substrate 301 before the light emitting element 200A is arranged.
  • the arrangement electrode 310 formed near the main surface of the glass substrate 301 includes a connection electrode 311 and a plurality (two in this example) of drive electrodes 312.
  • Each drive electrode 312 includes a main body 312A and a plurality (six in this example) of convex portions 312B.
  • the other arrangement electrode 320 includes a connection electrode 321 disposed at a position facing the connection electrode 311 and a plurality (two in this example) of drive electrodes 322.
  • Each drive electrode 322 includes a main body portion 322A and a plurality (six in this example) of convex portions 322B.
  • FIG. 16 is a cross-sectional view showing one of the plurality of light emitting elements 200A arranged on the glass substrate 301.
  • the light emitting element 200 ⁇ / b> A is arranged in a state where a side surface (widest side surface) parallel to the yz plane is in contact with the surface of the glass substrate 301.
  • the two end portions in the z direction of each light emitting element 200A overlap the concave portion 312B of the drive electrode 312 and the drive electrode 322B.
  • Examples of a method for arranging a plurality of light emitting elements 200A on the glass substrate 301 include the following.
  • the main surface of the glass substrate 301 is covered with water containing a plurality of light emitting elements 200A. Specifically, first, water is caused to flow on the glass substrate 301. Water containing a plurality of light emitting elements 200A is injected little by little into this water. The amount of water covering the main surface of the glass substrate 301 may be an amount that allows the plurality of light emitting elements 200A to freely move.
  • the light emitting element 200 ⁇ / b> A is disposed along the lines of electric force generated between the electrode 310 and the electrode 320. Further, the charges induced in each light emitting element 200A are substantially equal. Therefore, the interval between the two light emitting elements 200A arranged in a predetermined direction is substantially the same due to the repulsive force due to the electric charge.
  • the solution containing the plurality of light emitting elements 200A is replaced with IPA from water.
  • IPA IPA from water
  • the solution (IPA) containing the plurality of light emitting elements 200A is evaporated and dried.
  • the plurality of light emitting elements 200A are arranged at predetermined positions on the glass substrate 301.
  • each light emitting element 200 ⁇ / b> A becomes the light emitting element 200 having the exposed portion 205.
  • a method for removing the transparent conductive film 204, the p-type semiconductor layer 203, and the active layer 202 for example, there is reactive ion etching using chlorine gas. In this step, a part of the semiconductor core 201 may be removed.
  • the side surface of the light emitting element 200A where the exposed portion 205 is formed has a wider width (length in the y direction) than the conventional bar light emitting element, and therefore has a larger tolerance than the bar light emitting element. Can take.
  • a protective film 330 is formed on the main surface of the glass substrate 301 by a slit coater (see FIGS. 17 to 19). Thereby, each light emitting element 200 is covered with the protective film 330.
  • a material of the protective film 330 for example, silicon oxide (SiO 2 ) that is a transparent insulating film can be used.
  • contact holes 331 and 332 are formed (see FIGS. 17 to 19).
  • the contact hole 331 communicates with the exposed portion 205 of the semiconductor core 201, and the contact hole 332 communicates with the transparent conductive film 204.
  • the contact holes 331 and 332 are formed by, for example, a photolithography method.
  • the side surface of the light emitting element 200 has a wider width (length in the y direction) than the conventional bar light emitting element, so that the tolerance in the contact hole forming step is larger than that of the bar light emitting element. Can do.
  • a first wiring 340 and a second wiring 350 are formed. Specifically, first, a metal film (for example, a laminated film of a Ti layer and an Al layer) is formed on the entire surface of the protective film 330. Subsequently, the metal film is patterned by photolithography. As a result, the first wiring 340 including the contact metal 341 in the contact hole 331 and the second wiring 350 including the contact metal 351 in the contact hole 332 are formed, and a light emitting device is obtained. The contact metal 341 is in contact with the exposed portion 205 of the semiconductor core 201, and the contact metal 351 is in contact with the transparent conductive film 204.
  • a metal film for example, a laminated film of a Ti layer and an Al layer
  • FIGS. 17 to 19 show only one light emitting element
  • the same processing is simultaneously performed on a plurality of light emitting elements 200A arranged on the glass substrate 301 as shown in FIG. 15B.
  • a surface light emitting substrate (light emitting device) 400 including the glass substrate 301 and the wired light emitting elements can be obtained as shown in FIG.
  • divided substrates (light emitting devices) 430A to 430E having a desired size can be obtained.
  • the plate-like structure of the semiconductor core is formed by etching, but instead of etching, a selective growth method, a VLS method, or the like may be used.
  • FIG. 21 is a diagram corresponding to FIG. 13 in such a case.
  • the length of the light emitting element 200A in the z direction is the y direction (the direction parallel to the main surface of the sapphire substrate 210 in FIG. 13). Since the length is longer than the length, in the step of arranging the light emitting elements, two end portions of the light emitting elements facing each other in the z direction are arranged so as to overlap the concave portion 312B and the driving electrode 322B of the driving electrode 312 and end portions in the z direction. An exposed portion 205 was formed in the vicinity, and a first wiring 340 and a second wiring 350 were formed on both sides in the z direction.
  • the length of the light emitting element 200A in the y direction is longer than the length in the z direction (the direction perpendicular to the sapphire substrate 210 in FIG. 13).
  • two end portions of the light emitting elements facing in the y direction are arranged so as to overlap the concave portion 312B of the drive electrode 312 and the drive electrode 322B, and near one end portion in the y direction. It is convenient to form the exposed portion 205 and form the first wiring 340 and the second wiring 350 on both sides in the y direction.
  • the y direction is the first direction described in claim 1
  • the z direction is the second direction described in claim 1.
  • FIG. 22 is a view similar to FIG. 5, showing an alternative example of the cross-sectional contour shape of the light-emitting element shown in FIG.
  • FIG. 23 shows an alternative example of the profile of the cross section shown in FIGS. 13 (A) and 21 (A).
  • FIG. 24 shows an alternative example of the profile of the cross section shown in FIGS. 13 (B) and 21 (B).
  • the cross-sectional shapes shown in FIGS. 13A and 21A, and FIGS. 13B and 21B are quadrilateral, but in an alternative example, the shape has an inclined surface at the top. In addition, the upper surface may draw an arc.
  • FIG. 25 is a graph showing the effect of increasing the contact area between the contact metal of the wiring and the exposed portion of the semiconductor core according to the first embodiment.
  • the contact area of the rod-shaped light emitting element having a regular hexagonal cross section is the same as that of the first embodiment. It shows how many times the contact area of such a light emitting element (that is, a hexagonal shape having only two sides) is increased when the length of the rod-shaped light emitting element (length in the z direction) is 100 ⁇ m, 50 ⁇ m, and 20 ⁇ m.
  • the vertical axis of the graph represents the contact area increase amount (times) according to the first embodiment, that is, (contact area in the light emitting device according to the first embodiment) / (contact area in the bar light emitting device).
  • the horizontal axis of the graph represents the length ( ⁇ m) of one side of a regular hexagonal bar light emitting element.
  • the light-emitting element according to the first embodiment is a light-emitting element having a light-emitting area similar to that of a rod-shaped light-emitting element with a short side of hexagonal cross section fixed to 1 ⁇ m. It is.
  • the contact area of the light emitting device according to the first embodiment is increased by 2.5 times or more even if the light emitting area is equivalent to that of the rod-shaped light emitting device. It can be seen that the effect of increasing the contact area is more conspicuous with respect to a rod-like light emitting device having a smaller side length, in other words, a longer diameter. In particular, the smaller the diameter (in other words, the length of one side), the more the influence of the contact resistance appears, and it can be seen that the present invention is effective.
  • the light emitting element 200 can be applied to the light emitting element 200 without substantially changing the light emitting area as compared with the light emitting element having the conventional rod-shaped semiconductor core.
  • the tolerance for the contact process can be increased, and the yield of the light emitting element 200 and the light emitting device 400 (430A to 430E) using the light emitting element 200 can be improved.
  • the contact area between the contact metal 341 and the exposed portion 205 of the semiconductor core 201 can be increased as compared with a conventional light emitting device using a rod-shaped semiconductor core, and the contact resistance can be reduced accordingly.
  • the exposed portion 205 of the wiring 340 that contacts the contact metal 341 is only a part of the outer peripheral surface 2013 of the semiconductor core 201, and the other portion of the outer peripheral surface 2013 is covered with the second conductivity type semiconductor layer 203. Therefore, as compared with the plate-like structure of Patent Document 2, it is possible to reduce the size of the light emitting element 200 even with the same light emitting area and the same contact area, and the circuit for controlling the current direction during driving is as follows. It is unnecessary.
  • FIG. 26 shows a plan view of a light emitting device used in the illumination device of the second embodiment of the present invention
  • FIG. 27 shows a side view of the light emitting device.
  • the light emitting device 500 used in the illumination device of the second embodiment has ten or more plate-like light emitting elements (not shown) on a square heat sink 501.
  • the arranged circular insulating substrate 502 is mounted.
  • the plate-like light-emitting element is any of the plate-like light-emitting elements described in the first embodiment, and the manufacturing method of the light-emitting device of the first embodiment is used as the circular insulating substrate 502.
  • the divided substrate 430 on which 10 or more manufactured light emitting elements are arranged can be used.
  • FIG. 28 shows a side view of an LED bulb 510 as an example of a lighting device using the light emitting device 500 shown in FIGS.
  • the LED bulb 510 has a base 511 as a power supply connecting portion that is fitted in an external socket and connected to a commercial power source, and one end connected to the base 511, and the other end gradually expands.
  • a conical heat radiation part 512 having a diameter and a light transmission part 513 covering the other end of the heat radiation part 512 are provided.
  • the light emitting device 500 is arranged with the insulating substrate 502 facing the light transmitting part 513 side.
  • the light emitting device 500 is manufactured by the light emitting device manufacturing method of the first embodiment.
  • the illuminating device having the above configuration by using the light emitting device 500, it is possible to improve the yield, and it is possible to realize high efficiency and low power consumption of light emission efficiency by reducing contact resistance. In addition, it is possible to realize an illumination device with little variation in brightness and having a long lifetime. Further, by attaching the insulating substrate 502 on which the plurality of light emitting elements are disposed on the heat dissipation plate 501, the heat dissipation effect is improved.
  • FIG. 29 is a plan view of a backlight using the light emitting device according to the third embodiment of the present invention.
  • the backlight 600 includes a plurality of light emitting devices each having 10 or more plate-like light emitting elements on a rectangular support substrate 601 as an example of a heat sink. 602 are mounted in a grid pattern at a predetermined interval from each other.
  • the plate-like light-emitting element is any of the plate-like light-emitting elements described in the first embodiment, and is manufactured as the light-emitting device 602 using the method for manufacturing the light-emitting device of the first embodiment.
  • a divided substrate 430 on which one or more plate-like light emitting elements are arranged is used.
  • the backlight 600 uses the light emitting device 602, it is possible to improve the yield, and to realize high efficiency and low power consumption of light emission efficiency by reducing contact resistance. Manufacturing cost can be reduced, characteristic variation can be reduced, and yield can be improved. In addition, it is possible to realize an illumination device with little variation in brightness and having a long lifetime. Further, by attaching the light emitting device 602 on the support substrate 601, the heat dissipation effect is improved.
  • FIG. 30 is a plan view of a backlight using the light emitting device according to the fourth embodiment of the present invention.
  • one large light emitting device 612 is mounted on a rectangular support substrate 611 as an example of a heat sink.
  • the light emitting device 612 includes any of the light emitting elements described in the first embodiment.
  • the light emitting device 612 uses the divided substrate 430 manufactured by the method for manufacturing the light emitting device of the first embodiment.
  • the backlight 610 uses the light emitting device 612, the yield can be improved, and the light emission efficiency can be increased and the power consumption can be reduced by reducing the contact resistance. In addition, it is possible to realize an illumination device with little variation in brightness and having a long lifetime. Further, the heat radiation effect is improved by attaching the light emitting device 612 on the support substrate 611.
  • FIG. 31 shows a plan view and a side view of a liquid crystal panel as an example of a display device using the light emitting device of the fifth embodiment of the present invention.
  • a plurality of wired light emitting elements are arranged on one surface of a rectangular transparent substrate 622 as an example of a heat sink.
  • These light emitting elements are the plate-like light emitting elements described in the first embodiment.
  • the transparent substrate 622 corresponds to the glass substrate 301 shown in FIG.
  • One light emitting device is formed by the light emitting portion 621 including the plurality of wired light emitting elements wired and the transparent substrate 622.
  • pixel electrodes and TFTs thin film transistors
  • a liquid crystal sealing plate 624 is disposed on the other side of the transparent substrate 622 with a predetermined interval, and the liquid crystal 623 is sealed between the liquid crystal sealing plate 624 and the transparent substrate 622.
  • the LCD drive substrate and the backlight are separated, and due to problems such as uneven light intensity and heat generation of the backlight, the use of a light guide tube and heat dissipation element increases the cost, and the LCD panel It was getting thicker.
  • the liquid crystal panel 620 having the above-described configuration since it is composed of a plurality of light emitting elements with respect to the amount of light obtained from one conventional light emitting element, there is no problem of unevenness in light amount or heat generation. No light tube or heat dissipation element is required.
  • a light emitting device which is a divided substrate (corresponding to the divided substrate 430 described in the first embodiment) divided into a large liquid crystal panel is arranged on the side opposite to the surface having liquid crystal and used directly as a liquid crystal substrate. A low-cost and thin liquid crystal panel can be obtained.
  • the use of the light emitting device including the light emitting portion 621 including the light emitting element according to the first embodiment and the transparent substrate 622 can improve the yield and reduce the contact resistance. High luminous efficiency and low power consumption can be realized.
  • the transparent substrate 622 in which the liquid crystal panel substrate and the backlight substrate are combined the component cost and the manufacturing cost can be reduced, and a thinner liquid crystal panel can be realized.
  • a transparent substrate, a plurality of light emitting elements arranged on one surface of the transparent substrate and connected to wiring formed on one surface of the transparent substrate, and a color formed on the other surface of the transparent substrate may be applied to a liquid crystal panel provided with a filter.
  • FIG. 32 shows a liquid crystal panel 820 having such a configuration example.
  • a plurality of wired light emitting elements are arranged on one surface of a rectangular transparent substrate 822 as an example of a heat sink. These light emitting elements are the plate-like light emitting elements described in the first embodiment.
  • the transparent substrate 822 corresponds to the glass substrate 301 shown in FIG.
  • One light emitting device is formed by the light emitting portion 821 including the plurality of wired plate-like light emitting elements and the transparent substrate 822.
  • a color filter 823 is formed on the other surface of the transparent substrate 822, and a protective film 824 is formed on the color filter 823.
  • a glass substrate 827 is disposed on the other side of the transparent substrate 822 with a predetermined interval, and the liquid crystal 825 is sealed between the glass substrate 827 and the transparent substrate 822.
  • Pixel electrodes and TFTs 826 are formed in a matrix on the surface of the glass substrate 827 facing the liquid crystal 825.
  • liquid crystal panel by using a transparent substrate having a single color filter and backlight substrate, it is possible to reduce component costs and manufacturing costs, and to realize a thinner liquid crystal panel.
  • FIG. 34 is a diagram showing the external shape of the eyeglass-type display device 700 of the sixth embodiment.
  • FIG. 34 is an enlarged view of a part of the eyeglass lens 701 of the eyeglass-type display device 700.
  • the eyeglass-type display device 700 includes left and right eyeglass lenses (transparent substrates) 701, left and right temples 702, and a lens frame 703.
  • a light emitting device having a plurality of fine and transparent light emitting elements 711 is provided on the inner surfaces of the left and right eyeglass lenses 701.
  • This light-emitting device has the structure of the light-emitting device described in the first embodiment.
  • a plurality of fine microlenses 721 are provided at positions facing the plurality of light emitting elements 711 respectively.
  • the glasses-type display device 700 further includes a control circuit (control unit) (not shown) for controlling the light emission of the plurality of light emitting elements 711 in order to display an image.
  • the eyeglass-type display device 700 is provided corresponding to each of the eyeglass lens 701 that is a transparent substrate, the plurality of light emitting elements 711 disposed on the eyeglass lens 701, and the plurality of light emitting elements 711.
  • a plurality of microlenses 721 and at least a control circuit for controlling light emission of the plurality of light emitting elements 711 for displaying an image are provided.
  • the plate-like light emitting element 200 according to the first embodiment or an alternative example thereof is used. Accordingly, it is possible to improve the light emission efficiency, reduce the power consumption, and improve the yield by lowering the contact resistance.
  • FIG. 35 to 37 show an LED display 630 as an example of a display device according to the seventh embodiment of the present invention.
  • FIG. 35 is a diagram showing an external shape of the LED display 630
  • FIG. 36 is a block diagram showing a schematic configuration of the LED display 630
  • FIG. 37 is a circuit diagram showing a circuit of one subpixel of the LED display 630.
  • the LED display 630 includes a storage device 631, a control device 632, a source driver 633, a gate driver 634, and a display unit 635.
  • the storage device 631 stores image data, address information, and the like.
  • a plurality of source lines SL and a plurality of gate lines are arranged so as to cross each other, and a portion surrounded by the source lines SL and the gate lines GL is a sub-pixel PX. That is, the display unit 635 has a plurality of sub-pixels PX arranged in a matrix. Each sub-pixel PX corresponds to one of R (red), G (green), and B (blue) colors, and each of R (red), G (green), and B (blue) colors.
  • One pixel is composed of three sub-pixels PX corresponding to. A single color LED display using PX as a pixel may be used.
  • each subpixel PX has a source connected to the source line SL, a gate connected to the gate line GL, a transistor T1, a gate connected to the drain of the transistor T1, and a source connected to the power supply Vs.
  • Transistor T2 a capacitor C having one terminal connected to the source of transistor T1, and a pixel LED 636 having a gate connected to the drain of transistor T2.
  • the LED display 630 is an active matrix address system, and a selection voltage pulse is applied to the gate line GL by the source driver 633 under the control of the control device 632 based on the image data and address information read from the storage device 631.
  • the data signal is supplied to the source line SL by the gate driver 634.
  • the selection voltage pulse is input to the gate of the transistor T1 and the transistor T1 is turned on, the data signal is transmitted from the source to the drain of the transistor T1, and the data signal is stored as a voltage in the capacitor C.
  • the transistor T2 is for driving the pixel LED 636.
  • As the pixel LED 636 a plate-like light emitting element according to the first embodiment or a modification thereof is used.
  • the pixel LED 636 is connected to the power source Vs through the transistor T2. Therefore, when the transistor T2 is turned on by the data signal from the transistor T1, the pixel LED 636 is driven by the power source Vs.
  • the pixel LEDs 636 and the transistors T1 and T2 of the plurality of sub-pixels PX arranged in a matrix are formed on the substrate.
  • the LED display 636 of this embodiment can be manufactured by the following method, for example.
  • a plurality of plate-like light emitting elements 200A are formed by the method described with reference to FIGS. 7 to 14 in the first embodiment.
  • a substrate such as glass on which electrodes 310 and 320 (see FIG. 15) and source lines SL and gate lines GL for disposing these plate-like light emitting elements 200A to be the pixel LEDs 636 are formed (the glass in FIG. 16).
  • Transistors T1 and T2 are formed on the substrate 301) using a normal TFT forming method.
  • the semiconductor of the light emitting element 200A is arranged.
  • the core 201 is exposed to form a light emitting element 200 having an exposed portion 205, and further, a first wiring 340 and a second wiring 350 (see FIGS. 17 to 19) are formed, and these plate-like light emitting elements 200 are formed as pixels.
  • the LED 636 is connected to the drain of each corresponding transistor T2 and the ground line.
  • a substrate (corresponding to the surface light emitting substrate 400 in FIG. 20) on which a plurality of plate-like light emitting elements 200, that is, the pixel LEDs 636 connected to the drain and the ground line of each transistor T2 is divided into a desired size.
  • the divided substrate (corresponding to the divided substrate 430 in FIG. 20) is used, and the LED display 630 is manufactured using the divided substrate.
  • the LED display 630 uses the light emitting element itself as a pixel LED for image display, a backlight is not required unlike a liquid crystal display device or the like. Therefore, component cost and manufacturing cost can be reduced.
  • the plate-like light emitting element 200 according to the first embodiment or an alternative example thereof is used. Therefore, as in the other embodiments described above, it is possible to improve luminous efficiency, reduce power consumption, and improve yield by reducing contact resistance.
  • the appearance of the LED display 630 shown in FIG. 35 is merely an example, and the appearance of the LED display 630 may be any shape.
  • the drive system of the LED display of this embodiment is an active matrix system, it may be a passive system.
  • FIG. 38 is an external view of a see-through (transparent) LED display 640 as an example of a display device according to the eighth embodiment of the present invention.
  • This see-through type LED display 640 is different from the LED display 630 of the seventh embodiment in that the display unit 642 is see-through, that is, transparent.
  • the frame 641 surrounding the display unit is opaque, it may be transparent.
  • a protective film (see 330 in FIG. 17) that covers the substrate to be formed, the source line and the gate line formed on the substrate, the pixel LED, that is, the plate-like light emitting element, may be formed using a transparent material.
  • the see-through LED display 640 When the see-through LED display 640 is not displaying an image, an object on the back can be seen through the display unit 642. Even when an image is displayed, the portions other than the image portion remain transparent.
  • the light emitting element itself is used as a pixel LED for image display, and therefore, unlike a liquid crystal display device, a backlight is unnecessary. Therefore, component cost and manufacturing cost can be reduced.
  • the plate-like light emitting element according to the first embodiment or its alternative is used as the pixel LED, it is possible to improve the light emission efficiency, reduce the power consumption, and improve the yield by reducing the contact resistance.
  • the appearance shape of the see-through LED display 640 shown in FIG. 38 is merely an example, and the appearance shape may be any.
  • the present invention can be applied to other types of display devices.
  • the present invention can be applied to a clock-type display device and a display device for a portable terminal.

Abstract

This light emitting element is provided with: a semiconductor core (201) of a first conductivity type; and a semiconductor layer (203) of a second conductivity type, which is arranged around the outer peripheral surface of the semiconductor core. At least one of the lateral surfaces constituting the outer peripheral surface of the semiconductor core is entirely covered by the semiconductor layer (203); and another lateral surface has an exposed portion (205) that is not covered by the semiconductor layer (203) and is exposed. An xy cross-section of the light emitting element has a length L1 in the x direction and a length L2 in the y direction, and L1 and L2 satisfy the relational expression 2 × L2 ≤ L1 ≤ 1,000 × L2. The exposed portion (205) has a length L3 in the y direction and a length L4 in the z direction, and L3 is from 60% to 100% of L1.

Description

発光素子、発光装置、照明装置、バックライト、及び表示装置LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE, LIGHTING DEVICE, BACKLIGHT, AND DISPLAY DEVICE 援用記載Supporting statement
　本出願は、２０１６年７月１１日に出願された日本出願の特願２０１６－１３６９３４に対して、優先権の利益を主張するものであり、その日本出願に記載された全ての記載内容を援用するものである。 This application claims the benefit of priority with respect to Japanese Patent Application No. 2016-136934 filed on July 11, 2016, and uses all the descriptions in this Japanese application. To do.
　この発明は、ＬＥＤ等の発光素子、特に、第１導電型の半導体コアとこの半導体コアの外周面の回りに配置された第２導電型の半導体との間で発光するように構成されたマイクロオーダサイズまたはナノオーダサイズを有する発光素子、かかる発光素子を備えた発光装置、並びに上記発光装置を備えた照明装置、バックライト、表示装置に関する。 The present invention relates to a light-emitting element such as an LED, in particular, a micro-device configured to emit light between a first-conductivity-type semiconductor core and a second-conductivity-type semiconductor disposed around the outer peripheral surface of the semiconductor core. The present invention relates to a light-emitting element having an order size or a nano-order size, a light-emitting device including the light-emitting element, and an illumination device, a backlight, and a display device including the light-emitting device.
　上述のタイプの発光素子を備えた発光装置の一例として、特開２０１５－１２６０４８号公報（特許文献１）は、図３５，３６に示される断面構造を有する発光装置１００を開示している。図３９，４０はそれぞれ特開２０１５－１２６０４８公報において図１、２として開示されたものである。 As an example of a light-emitting device provided with the above-described type of light-emitting element, Japanese Patent Laying-Open No. 2015-126048 (Patent Document 1) discloses a light-emitting device 100 having a cross-sectional structure shown in FIGS. 39 and 40 are disclosed as Japanese Patent Application Laid-Open Nos. 2015-126048 as FIGS.
　この発光装置１００が備える発光素子１０は、第１導電型の半導体コア１２と、発光層１４と、第２導電型の半導体層１６とを備える。半導体コア１２は、正六角形の横断面を有する棒状つまり正六角柱状である。発光層１４は、半導体コア１２の中心軸線ＣＬ周りに配置され、半導体コア１２の外周面を構成する６つの側面１２Ａに接している。半導体層１６は中心軸線ＣＬ周りに配置され、発光層１４に接している。さらに半導体層１６の外側を透明導電膜３０が覆っている。発光素子１０の軸方向一端部において、発光素子１０の約半周にわたって、透明導電膜３０から発光層１４まで除去されており、半導体コア１２が中心軸線ＣＬに垂直な方向で露出している。 The light emitting element 10 included in the light emitting device 100 includes a first conductive type semiconductor core 12, a light emitting layer 14, and a second conductive type semiconductor layer 16. The semiconductor core 12 has a rod shape having a regular hexagonal cross section, that is, a regular hexagonal column shape. The light emitting layer 14 is disposed around the central axis CL of the semiconductor core 12 and is in contact with the six side surfaces 12 </ b> A constituting the outer peripheral surface of the semiconductor core 12. The semiconductor layer 16 is disposed around the central axis CL and is in contact with the light emitting layer 14. Further, the transparent conductive film 30 covers the outside of the semiconductor layer 16. At one end of the light emitting element 10 in the axial direction, the transparent conductive film 30 is removed from the light emitting layer 14 over about a half circumference of the light emitting element 10, and the semiconductor core 12 is exposed in a direction perpendicular to the central axis CL.
　発光装置１００はさらに保護膜４０、金属配線５０，６０を有する。配線５０，６０はそれぞれ、保護膜４０に形成されたコンタクトホール４０Ａ，４０Ｂ内に位置するコンタクトメタル５０Ｂ，６０Ｂとを備える。コンタクトメタル５０Ｂは半導体コア１２の露出部と接し、コンタクトメタル６０Ｂは透明導電膜３０に接している。 The light emitting device 100 further includes a protective film 40 and metal wirings 50 and 60. Each of the wirings 50 and 60 includes contact metals 50B and 60B located in the contact holes 40A and 40B formed in the protective film 40, respectively. The contact metal 50B is in contact with the exposed portion of the semiconductor core 12, and the contact metal 60B is in contact with the transparent conductive film 30.
　この発光装置１００は、発光素子の外周面が全周にわたって（半導体コア１２の露出部に対応する箇所を除く）発光する。したがって、一平面でしか発光しない平面型の発光素子に比べて、発光面積を広くすることができるという利点がある。 In the light emitting device 100, the outer peripheral surface of the light emitting element emits light over the entire circumference (except for the portion corresponding to the exposed portion of the semiconductor core 12). Accordingly, there is an advantage that the light emitting area can be widened as compared with a planar light emitting element that emits light only on one plane.
　しかし、この棒状（六角柱状）の発光素子１０は、図３６における横方向の長さ（直径）が小さく、半導体コア１２の露出部の対応する長さは更に小さいため、特にコンタクトプロセス（つまり、発光素子に対して配線を行うプロセスで、コンタクトホール形成のためのパターニング、コンタクトホール形成のためのエッチング、コンタクトホール内への導電材料の堆積等を含む。）において採用し得る公差がかなり小さい。したがって、発光装置製造時のコンタクトプロセスにおいて高い精度（アライメント精度等）が要求され、歩留まりの向上が難しいという問題がある。 However, since the bar-shaped (hexagonal columnar) light emitting element 10 has a small lateral length (diameter) in FIG. 36 and a corresponding length of the exposed portion of the semiconductor core 12 is further smaller, the contact process (that is, The process for wiring the light emitting element includes patterning for forming a contact hole, etching for forming a contact hole, deposition of a conductive material in the contact hole, etc.). Therefore, high accuracy (alignment accuracy, etc.) is required in the contact process when manufacturing the light emitting device, and there is a problem that it is difficult to improve the yield.
　そこで、第１導電型の半導体コアとこの半導体コアの外周面の回りに配置された第２導電型の半導体との間で発光するように構成された発光素子において、従来の棒状発光素子と同等の発光面積であっても、コンタクトプロセスにおける公差を大きくできる構成が求められている。 Therefore, a light emitting element configured to emit light between the first conductive type semiconductor core and the second conductive type semiconductor disposed around the outer peripheral surface of the semiconductor core is equivalent to a conventional bar light emitting element. Even if the light emitting area is, a configuration that can increase the tolerance in the contact process is required.
　加えて、従来の棒状の発光素子は、図３６における横方向の長さ（直径）が小さいために、半導体コア１２と配線５０（より正確には、コンタクトメタル５０Ｂ）との接触面積がそれに応じて小さくなり（例えば、０．１～５０μｍ２）、半導体コア１２とコンタクトメタル５０Ｂとの間の接触抵抗が無視できないほど大きくなってしまう場合があるという問題がある。そして、大きな接触抵抗は、発光効率の低下、消費電力の増大につながる。ちなみに、棒状ではなく、一平面でしか発光しない通常ＬＥＤにおける接触面積は、３×１０３μｍ２程度であるため、その接触抵抗は、半導体中の抵抗から考えると無視できるほど小さいものである。 In addition, since the conventional bar-shaped light emitting element has a small length (diameter) in the lateral direction in FIG. 36, the contact area between the semiconductor core 12 and the wiring 50 (more precisely, the contact metal 50B) corresponds to that. There is a problem that the contact resistance between the semiconductor core 12 and the contact metal 50B may become so large that it is not negligible (for example, 0.1 to 50 μm 2 ). A large contact resistance leads to a decrease in light emission efficiency and an increase in power consumption. Incidentally, the contact area of a normal LED that emits light only in one plane, not in a rod shape, is about 3 × 10 3 μm 2 .
　ところで、特開２０１２－０７４６７３号公報（特許文献２）は、第１導電型(ｎ型と）の半導体コアがこの半導体コアと同じ半導体材料からなる第１導電型の基部の一面から延び、半導体コアの外周面全体に第２導電型(ｐ型）の半導体が形成されているが、上記基部の外周面（側面）の回りには第２導電型の半導体は形成されておらず、この基部がカソード電極Ｋとして使用され、配線のコンタクトメタルが上記基部の側面に接触するように設けられる棒状の発光素子を開示している（特許文献２の図９，図１７参照）。つまり、配線のコンタクトメタルは半導体コアの外周面（側面）ではなく、基部の側面に接触するように設けられる。基部の側面は、第２導電型の半導体を覆う透明導電膜の側面と面一である。特許文献２はさらに、このような基部を備えた構成において発光量換言すれば発光面積を増大すべく、第１導電型の半導体コアを断面正方形の棒状から、断面が短辺と長辺とを有する矩形の板状とすることを開示している。 By the way, Japanese Patent Application Laid-Open No. 2012-074673 (Patent Document 2) discloses that a semiconductor core of a first conductivity type (n-type) extends from one surface of a base portion of a first conductivity type made of the same semiconductor material as the semiconductor core. A second conductivity type (p-type) semiconductor is formed on the entire outer peripheral surface of the core, but no second conductivity type semiconductor is formed around the outer peripheral surface (side surface) of the base. Is used as the cathode electrode K, and a rod-like light emitting element provided so that the contact metal of the wiring contacts the side surface of the base is disclosed (see FIGS. 9 and 17 of Patent Document 2). That is, the contact metal of the wiring is provided so as to contact the side surface of the base portion, not the outer peripheral surface (side surface) of the semiconductor core. The side surface of the base is flush with the side surface of the transparent conductive film that covers the second conductivity type semiconductor. Patent Document 2 further discloses that the first conductivity type semiconductor core has a square cross section, and the cross section has a short side and a long side in order to increase the light emission amount, in other words, the light emission area in the configuration including such a base. It discloses that it has a rectangular plate shape.
　上記の通り、特許文献２では、配線のコンタクトメタルは半導体コアの外周面（側面）ではなく、基部に接触する。したがって、特許文献２には明記されていないものの、コンタクトメタルとの接触面積は、基部の寸法を調整することによって調整できるという利点があると考えられる。 As described above, in Patent Document 2, the contact metal of the wiring contacts the base portion, not the outer peripheral surface (side surface) of the semiconductor core. Therefore, although not specified in Patent Document 2, it is considered that there is an advantage that the contact area with the contact metal can be adjusted by adjusting the size of the base.
　その一方で、特許文献２に開示された棒状発光素子では第１導電型の基部の回りには第２導電型の半導体が存在しないため、基部は発光に全く寄与していない。つまり、発光素子の長さ全体が発光面積増大の観点からは有効に利用されていない。また、第１導電型の基部の回りには第２導電型の半導体が存在しないため、特許文献１の構成に比べて、ｐ型半導体からｎ型半導体へと流れるように駆動時の電流方向を制御する回路が必要となる。 On the other hand, in the rod-shaped light emitting device disclosed in Patent Document 2, since the second conductivity type semiconductor does not exist around the first conductivity type base, the base does not contribute to the light emission at all. That is, the entire length of the light emitting element is not effectively used from the viewpoint of increasing the light emitting area. Further, since there is no second conductivity type semiconductor around the base of the first conductivity type, the current direction during driving is changed so as to flow from the p-type semiconductor to the n-type semiconductor as compared with the configuration of Patent Document 1. A circuit to control is required.
特開２０１５－１２６０４８号公報JP 2015-1206048 A 特開２０１２－０７４６７３号公報JP 2012-074673 A
　そこで、この発明の課題は、第１導電型の半導体コアとこの半導体コアの外周面の回りに配置された第２導電型の半導体との間で発光するように構成された発光素子に対するコンタクトプロセスのための公差を、同等の発光面積を有する棒状の発光素子に比べて大きくでき、したがって、かかる発光素子及びかかる発光素子を備えた発光装置並びに上記発光装置を備えた照明装置、バックライト、及び表示装置の歩留まりを向上し、併せて、同等の発光面積を有する棒状の発光素子に比べて半導体コアとコンタクトメタルとの接触抵抗を小さくして、発光効率の向上及び消費電力の低減を図ることである。 Accordingly, an object of the present invention is to provide a contact process for a light emitting element configured to emit light between a first conductivity type semiconductor core and a second conductivity type semiconductor disposed around the outer peripheral surface of the semiconductor core. Tolerance can be increased compared to a rod-shaped light emitting element having an equivalent light emitting area, and therefore, such a light emitting element, a light emitting device including the light emitting element, and a lighting device including the light emitting device, a backlight, and In addition to improving the yield of display devices, the contact resistance between the semiconductor core and the contact metal is reduced compared to a rod-like light emitting element having the same light emitting area, thereby improving the light emitting efficiency and reducing the power consumption. It is.
　上記課題を解決するために、本発明の一側面に係る発光素子は、
　第１の方向において対向する２つの端部とこれら端部の間の２以上の側面からなる外周面を有する第１導電型の半導体コアと、上記半導体コアの上記外周面の回りに配置された第２導電型の半導体層とを少なくとも備えて、上記半導体コアと上記半導体層との間で発光するようになっており、上記半導体コアの側面の少なくとも１つは側面全体が上記半導体層で覆われ、別の側面は上記半導体層によって覆われずに露出している露出部分を有する発光素子であって、
　上記第１の方向と直交する上記半導体コアの横断面は、第２の方向の長さＬ１と、上記第２の方向と直交する第３の方向の長さＬ２とを有し、長さＬ１は、２×Ｌ２≦Ｌ１≦１０００×Ｌ２の範囲にあり、
　上記半導体コアの露出部分は、上記第２の方向の長さＬ３と上記第１の方向の長さＬ４とを有し、上記長さＬ３は上記半導体コアの横断面の第２の方向の長さＬ１の６０％～１００％の長さであることを特徴としている。 In order to solve the above problems, a light-emitting element according to one aspect of the present invention includes:
A first-conductivity-type semiconductor core having an outer peripheral surface composed of two end portions facing each other in the first direction and two or more side surfaces between the end portions; and disposed around the outer peripheral surface of the semiconductor core. A semiconductor layer of at least a second conductivity type, and emits light between the semiconductor core and the semiconductor layer. At least one of the side surfaces of the semiconductor core is covered with the semiconductor layer. Another side surface is a light emitting device having an exposed portion that is exposed without being covered by the semiconductor layer,
The cross section of the semiconductor core orthogonal to the first direction has a length L1 in the second direction and a length L2 in the third direction orthogonal to the second direction. Is in the range of 2 × L2 ≦ L1 ≦ 1000 × L2,
The exposed portion of the semiconductor core has a length L3 in the second direction and a length L4 in the first direction, and the length L3 is a length in the second direction of the cross section of the semiconductor core. The length is 60% to 100% of the length L1.
　ここで、本明細書において、半導体コアの横断面の第２方向及び第３方向の「長さ」とは、それぞれの方向において最も長い部分の長さである。同様に、半導体コアの露出部分の第１及び第２方向の「長さ」とは、それぞれの方向において最も長い部分の長さである。 Here, in this specification, the “length” in the second direction and the third direction of the cross-section of the semiconductor core is the length of the longest portion in each direction. Similarly, the “length” of the exposed portion of the semiconductor core in the first and second directions is the length of the longest portion in each direction.
　２×Ｌ２≦Ｌ１つまりＬ１をＬ２の２倍以上とする理由は、それ以下であれば、公差を大きくし、接触抵抗を小さくするという本発明の意図する効果が得られないからである。また、Ｌ１≦１０００×Ｌ２つまりＬ１をＬ２の１０００倍以下とするのは、Ｌ１をＬ２の１０００倍よりも大きくした場合には、そのような寸法比を有する素子の製造自体が困難であるからである。 2 × L2 ≦ L1, that is, the reason why L1 is set to be twice or more of L2 is that if it is less than that, the intended effect of the present invention of increasing tolerance and reducing contact resistance cannot be obtained. Also, L1 ≦ 1000 × L2, that is, L1 is set to 1000 times or less of L2, because when L1 is made larger than 1000 times L2, it is difficult to manufacture an element having such a dimensional ratio. It is.
　上記半導体コアは、上記横断面が多角形状または楕円形状である板状コアであってよい。 The semiconductor core may be a plate core whose cross section is polygonal or elliptical.
　本明細書において、上記半導体コアの「外周面」を構成する「側面」とは、上記横断面が多角形状の場合には、上記２つの端部の間で角度をもって連結されているそれぞれの面をいい、上記横断面が楕円形状の場合には、上記２つの端部の間で上記第２の方向において対向する２つの面をいう。また、本明細書において、「楕円」は、数学的に厳密な意味での楕円はもちろんのこと、楕円に類似した細長い円も含むものとする。 In the present specification, the “side surface” constituting the “outer peripheral surface” of the semiconductor core means each surface connected at an angle between the two end portions when the cross section is a polygonal shape. In the case where the cross section is elliptical, it means two surfaces facing each other in the second direction between the two end portions. In this specification, “ellipse” includes not only an ellipse in a mathematically exact sense but also an elongated circle similar to an ellipse.
　上記半導体コアは上記第１の方向の長さＬ５を有し、Ｌ５≧Ｌ１であってもよい。 The semiconductor core may have a length L5 in the first direction, and L5 ≧ L1.
　上記半導体コアの横断面の上記第３の方向の長さＬ２および上記第２の方向の長さＬ１は、好ましくは、それぞれ、１００ｎｍ～２０μｍおよび３００ｎｍ～５００μｍの範囲内にある。より好ましくは、上記横断面の長さＬ２およびＬ１はそれぞれ、３００ｎｍ～１５μｍおよび１μｍ～２００μｍの範囲内にあり、さらに好ましくは、それぞれ５００ｎｍ～１０μｍおよび３μｍ～１００μｍの範囲内にあるのがよい。 The length L2 in the third direction and the length L1 in the second direction of the cross section of the semiconductor core are preferably in the range of 100 nm to 20 μm and 300 nm to 500 μm, respectively. More preferably, the cross-sectional lengths L2 and L1 are in the range of 300 nm to 15 μm and 1 μm to 200 μm, respectively, and more preferably in the range of 500 nm to 10 μm and 3 μm to 100 μm, respectively.
　上記露出部の上記第２方向の長さＬ３および上記第１方向の長さＬ４は、好ましくは、３００ｎｍ～５００μｍの範囲内にある。より好ましくは、上記露出部の長さＬ３および長さＬ４は、１μｍ～２００μｍの範囲内にあり、さらに好ましくは、３μｍ～１００μｍの範囲内にあるのがよい。 The length L3 in the second direction and the length L4 in the first direction of the exposed portion are preferably in the range of 300 nm to 500 μm. More preferably, the length L3 and the length L4 of the exposed portion are in the range of 1 μm to 200 μm, and more preferably in the range of 3 μm to 100 μm.
　本発明の別の側面に係る発光装置は、
　基板と、
　上記基板上に載置された複数の発光素子と、
　上記発光素子に電気的に接続されている配線と
を備え、
　上記発光素子は、請求項１～５のいずれか１つに記載の発光素子であって、上記第２導電型の半導体層を覆う導電膜をさらに備え、
　上記配線は、上記発光素子の半導体コアの露出部分に接触するコンタクトメタルを有する第１の配線及び上記導電膜に接触するコンタクトメタルを有する第２の配線を含んでいることを特徴としている。 A light-emitting device according to another aspect of the present invention includes:
A substrate,
A plurality of light-emitting elements mounted on the substrate;
A wiring electrically connected to the light emitting element,
The light emitting device according to any one of claims 1 to 5, further comprising a conductive film covering the semiconductor layer of the second conductivity type,
The wiring includes a first wiring having a contact metal in contact with an exposed portion of the semiconductor core of the light emitting element and a second wiring having a contact metal in contact with the conductive film.
　本発明の一実施例に係る照明装置は上記発光装置を備えている。 An illumination device according to an embodiment of the present invention includes the light emitting device.
　本発明の一実施例に係るバックライトは上記発光装置を備えている。 A backlight according to an embodiment of the present invention includes the light emitting device.
　本発明の一実施例に係る表示装置は上記発光装置を備えている。上記表示装置には種々のタイプのものが含まれる。例えば、上記表示装置は上記発光装置をバックライトとして用いる液晶表示装置であってもよく、また、上記発光装置に含まれる各発光素子が画素を構成する画素ＬＥＤとして使用されるＬＥＤディスプレイであってもよい。また、上記表示装置は表示部が透明なシースルー型であってもよい。また、上記表示装置は、眼鏡型であってもよい。 A display device according to an embodiment of the present invention includes the light emitting device. The display device includes various types. For example, the display device may be a liquid crystal display device using the light emitting device as a backlight, or an LED display in which each light emitting element included in the light emitting device is used as a pixel LED constituting a pixel. Also good. The display device may be a see-through type with a transparent display unit. The display device may be a glasses type.
　本発明によれば、半導体コアの横断面のサイズを規定する第２方向の長さＬ１と第３方向の長さＬ２について、２×Ｌ２≦Ｌ１≦１０００×Ｌ２としているため、横断面は長細い形状となり、しかも、半導体コアの露出部分の長さＬ３を発光素子の横断面の第２方向の長さＬ１の６０％～１００％の長さとしているため、特許文献１に開示された従来の棒状のコアを有する発光素子に比べて、発光面積を実質的に変えることなく、発光素子へのコンタクトプロセスのための公差をその分大きく取ることができ、この発光素子及びこの発光素子を用いた発光装置並びに上記発光装置を備えた照明装置、バックライト、表示装置の歩留まりを向上できる。 According to the present invention, since the length L1 in the second direction and the length L2 in the third direction that define the size of the cross section of the semiconductor core are 2 × L2 ≦ L1 ≦ 1000 × L2, the cross section is long. In addition, since the length L3 of the exposed portion of the semiconductor core is 60% to 100% of the length L1 in the second direction of the cross section of the light emitting element, it is a thin shape. Compared to a light emitting device having a rod-shaped core, the tolerance for the contact process to the light emitting device can be increased by a substantial amount without substantially changing the light emitting area, and the light emitting device and the light emitting device can be used. The yield of the light emitting device and the lighting device, backlight, and display device provided with the light emitting device can be improved.
　それと同時に、本発明に係る発光装置においては、特許文献１に開示されたような従来の微細な棒状のコアを用いた発光装置に比べて、コンタクトメタルと半導体コアの露出部分との接触面積を大きくすることが可能となるため、その分接触抵抗を小さくでき、発光効率の向上及び消費電力の低減が可能となる。したがって、この発光装置を備えた照明装置、バックライト、表示装置においても、発光効率の向上及び消費電力の低減が可能となる。 At the same time, in the light emitting device according to the present invention, the contact area between the contact metal and the exposed portion of the semiconductor core is smaller than that of the conventional light emitting device using a fine rod-shaped core as disclosed in Patent Document 1. Since it is possible to increase the contact resistance, the contact resistance can be reduced accordingly, and the light emission efficiency can be improved and the power consumption can be reduced. Therefore, also in a lighting device, a backlight, and a display device provided with this light emitting device, it is possible to improve luminous efficiency and reduce power consumption.
　さらに、本発明によれば、配線のコンタクトメタルと接触する露出部分は半導体コアの外周面の一部のみであり、外周面の他の部分は第２導電型の半導体層で覆われているため、特許文献２の板状構造と比べると、同じ発光面積および同じ接触面積であっても、発光素子のサイズを小さくすることが可能である上、駆動時の電流方向を制御する回路は不要である。 Furthermore, according to the present invention, the exposed portion that contacts the contact metal of the wiring is only a part of the outer peripheral surface of the semiconductor core, and the other portion of the outer peripheral surface is covered with the semiconductor layer of the second conductivity type. Compared with the plate-like structure of Patent Document 2, it is possible to reduce the size of the light emitting element even with the same light emitting area and the same contact area, and a circuit for controlling the current direction during driving is unnecessary. is there.
第１実施形態に係る発光素子の概略斜視図である。1 is a schematic perspective view of a light emitting device according to a first embodiment. 図１のＩＩ－ＩＩ線断面図である。FIG. 2 is a sectional view taken along line II-II in FIG. 図１のＩＩＩ－ＩＩＩ線断面図である。FIG. 3 is a sectional view taken along line III-III in FIG. 1. 図１のＩＶ－ＩＶ線断面図である。FIG. 4 is a sectional view taken along line IV-IV in FIG. 1. 図４に示される発光素子の断面の輪郭形状の代替例を示す図である。It is a figure which shows the alternative example of the outline shape of the cross section of the light emitting element shown by FIG. 従来の棒状発光素子のコンタクトエリアと第１実施形態に係る発光素子の一例のコンタクトエリアとを比較した図である。It is the figure which compared the contact area of the conventional light emitting element with the contact area of an example of the light emitting element which concerns on 1st Embodiment. 図１～図４に示した発光素子を備えた発光装置の製造工程の一つを説明する図である。FIG. 5 is a diagram for explaining one of manufacturing steps of a light emitting device including the light emitting element shown in FIGS. 図７の工程に続く工程を示す図であり、（Ａ）はｘｚ平面で切断した断面（以下、ｘｚ断面）を、（Ｂ）はｙｚ平面で切断した断面（以下、yｚ断面）を示す。8A and 8B are diagrams illustrating a process subsequent to the process of FIG. 7, in which FIG. 7A illustrates a cross section cut along the xz plane (hereinafter, xz cross section), and FIG. 7B illustrates a cross section cut along the yz plane (hereinafter referred to as the yz cross section). 図８の工程に続く工程を示す図であり、（Ａ）はｘｚ断面を、（Ｂ）はｙｚ断面を示す。It is a figure which shows the process following the process of FIG. 8, (A) shows a xz cross section, (B) shows a yz cross section. 図９の工程に続く工程を示す図であり、（Ａ）はｘｚ断面を、（Ｂ）はｙｚ断面を示す。It is a figure which shows the process following the process of FIG. 9, (A) shows a xz cross section, (B) shows a yz cross section. 図１０の工程に続く工程を示す図であり、（Ａ）はｘｚ断面を、（Ｂ）はｙｚ断面を示す。It is a figure which shows the process following the process of FIG. 10, (A) shows a xz cross section, (B) shows a yz cross section. 図１１の工程に続く工程を示す図であり、（Ａ）はｘｚ断面を、（Ｂ）はｙｚ断面を示す。It is a figure which shows the process following the process of FIG. 11, (A) shows a xz cross section, (B) shows a yz cross section. 図１２の工程に続く工程を示す図であり、（Ａ）はｘｚ断面を、（Ｂ）はｙｚ断面を、（Ｃ）はｘｙ断面（ｘｙ平面で切断した断面）を示す。It is a figure which shows the process following the process of FIG. 12, (A) shows xz cross section, (B) shows yz cross section, (C) shows xy cross section (cross section cut | disconnected by xy plane). 図１３の工程に続く工程を示す図であり、（Ａ）はｘｚ断面を、（Ｂ）はｙｚ断面を示す。It is a figure which shows the process following the process of FIG. 13, (A) shows a xz cross section, (B) shows a yz cross section. 図１４の工程に続く工程を示す図であり、（Ａ）は発光素子配置前の状態を、（Ｂ）は発光素子配置後の状態を示す。It is a figure which shows the process following the process of FIG. 14, (A) shows the state before light emitting element arrangement | positioning, (B) shows the state after light emitting element arrangement | positioning. 発光素子配置箇所の断面図である。It is sectional drawing of a light emitting element arrangement | positioning location. 図１５の工程に続く工程を示す図であり、図２に対応する断面を示すFIG. 16 is a diagram showing a step that follows the step of FIG. 15 and shows a cross-section corresponding to FIG. 2. 図１５の工程に続く工程を示す図であり、図３に対応する断面を示す。FIG. 16 is a diagram showing a step that follows the step of FIG. 15, and shows a cross section corresponding to FIG. 3. 図１５の工程に続く工程を示す図であり、図４に対応する断面を示すFIG. 16 is a diagram showing a step that follows the step of FIG. 15 and shows a cross-section corresponding to FIG. 4. 図１７（図１８，図１９）の工程に続く工程を示す図である。It is a figure which shows the process following the process of FIG. 17 (FIG. 18, FIG. 19). 第１実施形態に係る発光素子の変形例を説明するための図１３に対応する図面であり、（Ａ）はｘｚ断面を、（Ｂ）はｙｚ断面を、（Ｃ）はｘｙ断面を示す。It is drawing corresponding to FIG. 13 for demonstrating the modification of the light emitting element which concerns on 1st Embodiment, (A) shows xz cross section, (B) shows yz cross section, (C) shows xy cross section. 図２１（Ｃ）に示される発光素子の断面の輪郭形状の代替例を示す、図５と同様の図である。It is a figure similar to FIG. 5 which shows the alternative example of the outline shape of the cross section of the light emitting element shown by FIG.21 (C). 図１３（Ａ）及び図２１（Ａ）に示される断面の輪郭形状の代替例を示す。The alternative example of the profile shape of the cross section shown by FIG. 13 (A) and FIG. 21 (A) is shown. 図１３（Ｂ）及び図２１（Ｂ）に示される断面の輪郭形状の代替例を示す。An alternative example of the profile of the cross section shown in FIGS. 13B and 21B is shown. 第１実施形態の効果を示す図表である。It is a chart which shows the effect of a 1st embodiment. 第２実施形態の照明装置に用いられる発光装置の平面図である。It is a top view of the light-emitting device used for the illuminating device of 2nd Embodiment. 上記発光装置の側面図である。It is a side view of the light-emitting device. 上記発光装置を用いた照明装置の一例としてのＬＥＤ電球の側面図である。It is a side view of the LED bulb | bulb as an example of the illuminating device using the said light-emitting device. 第３実施形態の発光装置を用いたバックライトの平面図である。It is a top view of the backlight using the light-emitting device of 3rd Embodiment. 第４実施形態の発光装置を用いたバックライトの平面図である。It is a top view of the backlight using the light-emitting device of 4th Embodiment. 第５実施形態の発光装置を用いた表示装置の一例としての液晶パネルの平面図と側面図である。It is the top view and side view of a liquid crystal panel as an example of the display apparatus using the light-emitting device of 5th Embodiment. 図３１とは異なる表示装置の一例としての液晶パネルの側面図である。FIG. 32 is a side view of a liquid crystal panel as an example of a display device different from that in FIG. 31. 第６実施形態における表示装置の一例としての眼鏡型表示装置の外観形状を示す図である。It is a figure which shows the external appearance shape of the spectacles type display apparatus as an example of the display apparatus in 6th Embodiment. 上記眼鏡型表示装置の眼鏡レンズの一部を拡大した図である。It is the figure which expanded a part of spectacle lens of the said spectacles type display apparatus. 第７実施形態の表示装置の一例としてのＬＥＤディスプレイの外観形状を示す図である。It is a figure which shows the external appearance shape of the LED display as an example of the display apparatus of 7th Embodiment. 上記ＬＥＤディスプレイの概略構成を示すブロック図である。It is a block diagram which shows schematic structure of the said LED display. 上記ＬＥＤディスプレイの一サブ画素の回路を示す回路図である。It is a circuit diagram which shows the circuit of one sub pixel of the said LED display. 第８実施形態における表示装置の一例としてのシースルー型（透明）ＬＥＤディスプレイの外観形状を示す図である。It is a figure which shows the external appearance shape of the see-through type (transparent) LED display as an example of the display apparatus in 8th Embodiment. 特許文献１の図１を示す。FIG. 1 of Patent Document 1 is shown. 特許文献１の図２を示す。FIG. 2 of Patent Document 1 is shown.
　以下、この発明を図示の実施の形態により詳細に説明する。 Hereinafter, the present invention will be described in detail with reference to embodiments shown in the drawings.
　　　(第１実施形態)
　この発明の発光素子の第１実施形態を図１～図２５を用いて説明する。図１～５はこの第１実施形態における発光素子２００の構造を説明するための図であり、図６は従来の棒状発光素子のコンタクトエリアと第１実施形態に係る発光素子の一例のコンタクトエリアとを比較した図であり、図７～２０はこの発光素子２００を備えた発光装置の製造工程を説明する図であり、図２１は上記発光素子２００の変形例を説明する図であり、図２２～２４は上記発光素子２００の各種断面の輪郭形状の代替例を示す図である。 (First embodiment)
A first embodiment of the light emitting device of the present invention will be described with reference to FIGS. FIGS. 1 to 5 are views for explaining the structure of the light emitting device 200 in the first embodiment. FIG. 6 shows a contact area of a conventional bar light emitting device and a contact area of an example of the light emitting device according to the first embodiment. 7 to 20 are diagrams illustrating a manufacturing process of a light emitting device including the light emitting element 200, and FIG. 21 is a diagram illustrating a modification of the light emitting element 200. 22 to 24 are diagrams showing alternative examples of contour shapes of various cross sections of the light emitting element 200. FIG.
　この第１実施形態における発光素子２００は、第１導電型としてのｎ型の半導体コア２０１と、活性層２０２と、第２導電型としてのｐ型の半導体層２０３と、導電層としての透明導電膜２０４とを備えている。 The light emitting device 200 according to the first embodiment includes an n-type semiconductor core 201 as a first conductivity type, an active layer 202, a p-type semiconductor layer 203 as a second conductivity type, and a transparent conductivity as a conductive layer. And a film 204.
　ここでは、第１導電型をｎ型とし、第２導電型をｐ型としているが、第１導電型をｐ型とし、第２導電型をｎ型とし、発光素子２００がｎ型の半導体コア２０１に代えてｐ型の半導体コアを、ｐ型の半導体層２０３に代えてｎ型の半導体層を備えてもよい。 Here, the first conductivity type is n-type and the second conductivity type is p-type. However, the first conductivity type is p-type, the second conductivity type is n-type, and the light emitting element 200 is an n-type semiconductor core. Instead of 201, a p-type semiconductor core may be provided, and instead of the p-type semiconductor layer 203, an n-type semiconductor layer may be provided.
　半導体コア２０１、活性層２０２、半導体層２０３の材料としては、ＩｎｘＡｌｙＧａｚＮ（ｘ＋ｙ＋ｚ＝１かつ０≦ｘ，ｙ，ｚ≦１を満たす）で表わされるＩＩＩ族窒化物半導体であればどのような材料でも用いることができる。更に、Ｖ族としてＡｓやＰ、Ｓｂを含んでも構わず、また、Ｓｉ、Ｇｅ等のＩＶ族半導体、ＺｎＯやＺｎＳｅ等のＩＩ－ＶＩ族半導体でも構わない。また、透明導電膜２０４の材料としては、例えば、ＩＴＯ、ＺｎＯ、ＳｎＯ等を用いることができる。もちろん、ここには挙げていない材料であっても当業者に知られた材料を適宜使用することができる。本実施例の本質は発光素子の材料自体にはないため、ここに例示する発光素子の材料は本発明を限定するものと理解されるべきではない。 The material of the semiconductor core 201, the active layer 202, and the semiconductor layer 203 may be a group III nitride semiconductor represented by In x Al y Ga z N (x + y + z = 1 and 0 ≦ x, y, z ≦ 1). Any material can be used. Further, the group V may contain As, P, or Sb, or may be a group IV semiconductor such as Si or Ge, or a group II-VI semiconductor such as ZnO or ZnSe. Moreover, as a material of the transparent conductive film 204, for example, ITO, ZnO, SnO, or the like can be used. Of course, materials known to those skilled in the art can be appropriately used even if they are not listed here. Since the essence of this embodiment is not in the material of the light emitting element itself, the material of the light emitting element illustrated here should not be understood as limiting the present invention.
　半導体コア２０１は、第１の方向としてのｚ方向において対向する２つの端部（端面）２０１１、２０１２とこれら端部の間の外周面２０１３を有する。図３に示すように、半導体コア２０１は、中央の対向する２つの辺が他の辺よりも長い六角形のｘｙ断面（ｚ方向と直交する横断面）を有する。つまり、半導体コア２０１は、ｘｙ断面の上記長い２つの辺に対応する側面２０１３ａと残りの４つの辺に対応する側面２０１３ｂとを有しており、これらの６つの側面２０１３ａ，２０１３ｂが外周面２０１３を構成している。図１～３に示すように、半導体コア２０１の側面２０１３ａの一つには、端部２０１２に近接する位置において、活性層２０２，半導体層２０３および透明導電膜２０４によって覆われずに露出している露出部分２０５が形成されている。この露出部分２０５を除く半導体コア２０１の外周面２０１３はすべて、活性層２０２，半導体層２０３および透明導電膜２０４によって覆われており、半導体コア２０１と半導体層２０３との間にある活性層２０２が発光層として作用する。 The semiconductor core 201 has two end portions (end surfaces) 2011 and 2012 that face each other in the z direction as the first direction, and an outer peripheral surface 2013 between these end portions. As shown in FIG. 3, the semiconductor core 201 has a hexagonal xy cross section (a cross section perpendicular to the z direction) in which two opposite sides at the center are longer than the other sides. That is, the semiconductor core 201 has a side surface 2013a corresponding to the two long sides of the xy cross section and a side surface 2013b corresponding to the remaining four sides, and these six side surfaces 2013a and 2013b are the outer peripheral surface 2013. Is configured. As shown in FIGS. 1 to 3, one of the side surfaces 2013 a of the semiconductor core 201 is exposed without being covered with the active layer 202, the semiconductor layer 203, and the transparent conductive film 204 at a position close to the end portion 2012. An exposed portion 205 is formed. All of the outer peripheral surface 2013 of the semiconductor core 201 excluding the exposed portion 205 is covered with the active layer 202, the semiconductor layer 203, and the transparent conductive film 204, and the active layer 202 between the semiconductor core 201 and the semiconductor layer 203 is formed. Acts as a light emitting layer.
　半導体コア２０１の上記ｘｙ断面は、第２の方向としてのｙ方向の長さＬ１と第３の方向としてのｘ方向の長さＬ２とを有する。長さＬ１は、２×Ｌ２≦Ｌ１≦１０００×Ｌ２の範囲にあり、図２，３で見て横長の形状を有する。また、図３に示すように、外周面２０１３は、ｚ方向の長さＬ５を有する。つまり、半導体コア２０１は、ｙ方向の長さＬ１、ｘ方向の長さＬ２、ｚ方向の長さＬ５で定まる、ｘｙ断面が細長い六角形である薄い板状形状を有する（但し、露出部分２０５においては、ｘ方向の長さはＬ２の半分まで小さくなる場合がある。）。 The xy section of the semiconductor core 201 has a length L1 in the y direction as the second direction and a length L2 in the x direction as the third direction. The length L1 is in the range of 2 × L2 ≦ L1 ≦ 1000 × L2, and has a horizontally long shape as viewed in FIGS. As shown in FIG. 3, the outer peripheral surface 2013 has a length L5 in the z direction. That is, the semiconductor core 201 has a thin plate-like shape that is defined by a length L1 in the y direction, a length L2 in the x direction, and a length L5 in the z direction, and the xy cross section is a long and narrow hexagon (however, the exposed portion 205 , The length in the x direction may be as small as half of L2.)
　ｘｙ断面のｙ方向の長さＬ１の範囲は、ｘ方向の長さＬ２を例えば５００ｎｍとした場合には、１０×Ｌ２≦Ｌ１≦２００×Ｌ２であるのが好ましく、Ｌ２を１μｍとした場合には、５×Ｌ２≦Ｌ１≦１００×Ｌ２であるのが好ましい。このように、Ｌ１の好ましい範囲は、Ｌ２の具体的数値によって、２×Ｌ２≦Ｌ１≦１０００×Ｌ２の範囲内で決定される。 The range of the length L1 in the y direction of the xy section is preferably 10 × L2 ≦ L1 ≦ 200 × L2 when the length L2 in the x direction is 500 nm, for example, and when L2 is 1 μm. Is preferably 5 × L2 ≦ L1 ≦ 100 × L2. Thus, the preferable range of L1 is determined within the range of 2 × L2 ≦ L1 ≦ 1000 × L2 by the specific value of L2.
　半導体コア２０１のｘ方向の長さＬ２は、好ましくは、１００ｎｍ～２０μｍの範囲内にあり、より好ましくは、３００ｎｍ～１５μｍ、さらに好ましくは、５００ｎｍ～１０μｍである。ｘ方向の長さＬ２を３００ｎｍ以上とするのは、ｎ層にコンタクトする際のエッチング量のずれによる安定性とｎ型半導体中を流れる電流に対しての抵抗率を下げるためである。また、ｘ方向の長さＬ２を２０μｍ以下とするのは、これ以上の長さでは別基板に配列した際に生じる段差が大きく、コンタクトプロセスにおける歩留まりが著しく悪化してしまうためである。 The length L2 of the semiconductor core 201 in the x direction is preferably in the range of 100 nm to 20 μm, more preferably 300 nm to 15 μm, and still more preferably 500 nm to 10 μm. The reason why the length L2 in the x direction is set to 300 nm or more is to reduce the stability due to the shift in the etching amount when contacting the n layer and the resistivity against the current flowing in the n-type semiconductor. Further, the reason why the length L2 in the x direction is set to 20 μm or less is that when the length is longer than this, there is a large level difference when arranged on another substrate, and the yield in the contact process is significantly deteriorated.
　一方、半導体コア２０１のｙ方向の長さＬ１は、２×Ｌ２≦Ｌ１≦１０００×Ｌ２の範囲にあるため、上述の通り、Ｌ２の長さに応じて実際の数値範囲が定まるのであるが、３００ｎｍ～５００μｍの範囲に入るように設定するのが好ましい。より好ましくは、１μｍ～２００μｍ、さらに好ましくは、３μｍ～１００μｍである。 On the other hand, since the length L1 of the semiconductor core 201 in the y direction is in the range of 2 × L2 ≦ L1 ≦ 1000 × L2, as described above, the actual numerical range is determined according to the length of L2. It is preferable to set so as to fall within the range of 300 nm to 500 μm. More preferably, it is 1 μm to 200 μm, and still more preferably 3 μm to 100 μm.
　半導体コア２０１の露出部分２０５は、ｙ方向の長さＬ３とｚ方向の長さＬ４を有する。露出部分２０５のｚ方向の長さＬ４は、通常の場合、半導体コア２０１のｚ方向の長さＬ５の半分以下である。露出部分２０５のy方向の長さＬ３は、半導体コア２０１のｙ方向の長さＬ１の６０％～１００％の長さ、より好ましくは、７０％～１００％、さらに好ましくは、８０％～１００％である。露出部分２０５は四角形に限らず、角丸四角形や多角形、円形等形状は問わない。 The exposed portion 205 of the semiconductor core 201 has a length L3 in the y direction and a length L4 in the z direction. The length L4 of the exposed portion 205 in the z direction is usually less than or equal to half the length L5 of the semiconductor core 201 in the z direction. The length L3 of the exposed portion 205 in the y direction is 60% to 100% of the length L1 of the semiconductor core 201 in the y direction, more preferably 70% to 100%, and still more preferably 80% to 100%. %. The exposed portion 205 is not limited to a quadrangle, and may be any shape such as a rounded quadrangle, a polygon, or a circle.
　発光素子２００の発光面積は、半導体コア２０１の全表面積のうち、発光層２０２、半導体層２０３によって覆われている部分の面積によって決まる。半導体コアの端面は露出している場合もあり、また、端面の面積は外周面（全側面）の面積に比べて格段に小さいため、発光面積を考える上で端面の面積は無視できる。したがって、発光面積に大きく影響するのは半導体コア２０１の外周面２０１３の面積である。第１実施形態において、半導体コア２０１のｘｙ断面形状である細長六角形の短い辺の長さを正六角形の一辺の長さと同じとした場合、長い辺の長さは２×Ｌ２≦Ｌ１≦１０００×Ｌ２の条件を満たす範囲において正六角形の一辺の長さよりも長くできるので、半導体コアのｚ方向の長さを一定とすると、断面正六角状の棒状の半導体コアに比べて、半導体コア２０１の外周面２０１３の面積が増大する。一方、半導体コア２０１の露出部分２０５の長さＬ３を発光素子２００のｘｙ断面のｙ方向の長さＬ１の６０％～１００％の長さとしているため、露出部分２０５のｚ方向の長さＬ４が、従来の断面正六角状の棒状の半導体コアと同じだとすれば、半導体コア２０１の露出部分２０５の面積はこの従来の半導体コアよりも大きくなる。露出部分２０５の面積が従来の棒状の発光素子よりも増加した分、発光面積に寄与する半導体コア２０１の外周面２０１３の面積は減るが、従来の棒状の発光素子と同等またはそれ以上の発光面積が得られる。 The light emitting area of the light emitting element 200 is determined by the area of the portion covered by the light emitting layer 202 and the semiconductor layer 203 out of the total surface area of the semiconductor core 201. In some cases, the end face of the semiconductor core is exposed, and the area of the end face is much smaller than the area of the outer peripheral face (all the side faces). Therefore, it is the area of the outer peripheral surface 2013 of the semiconductor core 201 that greatly affects the light emitting area. In the first embodiment, when the length of the short side of the elongated hexagon that is the xy cross-sectional shape of the semiconductor core 201 is the same as the length of one side of the regular hexagon, the length of the long side is 2 × L2 ≦ L1 ≦ 1000. Since the length of one side of the regular hexagon can be longer than the length of one side of the regular hexagon within a range satisfying the condition of × L2, if the length of the semiconductor core in the z direction is constant, the semiconductor core 201 is compared with a rod-shaped semiconductor core having a regular hexagonal cross section. The area of the outer peripheral surface 2013 increases. On the other hand, since the length L3 of the exposed portion 205 of the semiconductor core 201 is 60% to 100% of the length L1 in the y direction of the xy cross section of the light emitting element 200, the length L4 of the exposed portion 205 in the z direction. However, if it is the same as a conventional semiconductor core having a regular hexagonal cross section, the area of the exposed portion 205 of the semiconductor core 201 is larger than that of the conventional semiconductor core. Although the area of the outer peripheral surface 2013 of the semiconductor core 201 that contributes to the light emission area is reduced by the amount by which the area of the exposed portion 205 is increased compared to the conventional bar light emitting element, the light emitting area is equal to or larger than that of the conventional bar light emitting element. Is obtained.
　しかも、半導体コア２０１の露出部分２０５のｙ方向の長さＬ３は、従来の棒状のコアよりも大幅に長くできる。したがって、本発明によれば、特許文献１に開示された従来の棒状のコアを有する発光素子に比べて、発光面積を実質的に変えることなく、発光素子へのコンタクトプロセスのための公差をその分大きく取ることができ、この発光素子の歩留まりを向上できる。 Moreover, the length L3 in the y direction of the exposed portion 205 of the semiconductor core 201 can be significantly longer than that of the conventional rod-shaped core. Therefore, according to the present invention, compared with the conventional light emitting device having a rod-shaped core disclosed in Patent Document 1, the tolerance for the contact process to the light emitting device can be reduced without substantially changing the light emitting area. Therefore, the yield of the light-emitting elements can be improved.
　また、特許文献２の板状構造と比べると、同じ発光面積および同じ接触面積であっても、発光素子のサイズを小さくできる。 Further, as compared with the plate-like structure of Patent Document 2, the size of the light emitting element can be reduced even with the same light emitting area and the same contact area.
　図６は従来の棒状の発光素子と本実施形態に係る発光素子とを比較するための概略斜視図であり、（Ａ）は従来の棒状の発光素子、（Ｂ）（Ｃ）は本実施形態に係る発光素子の一例を示している。（Ａ）に示した棒状の発光素子は、一辺が２μｍ、ｚ方向の長さが５０μｍである。（Ｂ）に示した本実施形態に係る発光素子は、短辺が１μｍ、長辺が４μｍ、ｚ方向の長さが５０μｍである。（Ｃ）に示した本実施形態に係る発光素子は、短辺が１μｍ、長辺が１１μｍ、ｚ方向の長さが２２μｍである。これらの発光素子はほぼ同じ表面積を有するが、配線工程における位置ずれ（公差）をいずれも０．５μｍとした場合、コンタクトエリアつまり配線と半導体コアとの接触面積は、たとえば、（Ａ）では１μｍ×２４μｍ＝２４μｍ２、（Ｂ）では３μｍ×２４μｍ＝７２μｍ２、（Ｃ）では１０μｍ×１０μｍ＝１００μｍ２となる。つまり、（Ａ）から（Ｃ）に行くにしたがって、コンタクトエリアのサイズを大きくできる。逆に言えば、（Ｂ）から（Ｃ）に行くにしたがって、後述する配線工程における位置ずれ（公差）をより大きくできる。 6A and 6B are schematic perspective views for comparing a conventional bar-shaped light emitting device and the light emitting device according to the present embodiment. FIG. 6A is a conventional bar-shaped light emitting device, and FIGS. 1 shows an example of a light emitting element according to the above. The rod-shaped light emitting element shown in (A) has a side of 2 μm and a length in the z direction of 50 μm. The light emitting element according to this embodiment shown in FIG. 5B has a short side of 1 μm, a long side of 4 μm, and a length in the z direction of 50 μm. The light emitting element according to this embodiment shown in (C) has a short side of 1 μm, a long side of 11 μm, and a length in the z direction of 22 μm. These light emitting elements have substantially the same surface area, but when the positional deviation (tolerance) in the wiring process is 0.5 μm, the contact area, that is, the contact area between the wiring and the semiconductor core is, for example, 1 μm in (A). × 24 μm = 24 μm 2 , (B) is 3 μm × 24 μm = 72 μm 2 , and (C) is 10 μm × 10 μm = 100 μm 2 . That is, the size of the contact area can be increased from (A) to (C). In other words, as it goes from (B) to (C), the positional deviation (tolerance) in the wiring process described later can be increased.
　なお、上述の具体的数値は一例であり、本発明を限定するものではないことをここで強調しておく。 It should be emphasized here that the above-described specific numerical values are examples and do not limit the present invention.
　図１～５に示した発光素子２００は、半導体コア２０１と半導体層２０３との間に発光層としての活性層２０２を備えている。活性層２０２は障壁層と量子井戸層が交互に積層された多層量子井戸層であってもよいし、単一量子井戸層であってもよい。障壁層は、例えば、ＧａＮである。量子井戸層は、例えば、ＩｎＧａＮである。Ｉｎ及びＧａの組成比は、目的とする光の波長に応じて、適宜、設定される。 The light emitting device 200 shown in FIGS. 1 to 5 includes an active layer 202 as a light emitting layer between a semiconductor core 201 and a semiconductor layer 203. The active layer 202 may be a multilayer quantum well layer in which barrier layers and quantum well layers are alternately stacked, or may be a single quantum well layer. The barrier layer is, for example, GaN. The quantum well layer is, for example, InGaN. The composition ratio of In and Ga is appropriately set according to the target wavelength of light.
　活性層２０２は必ずしも備える必要はない。しかし、活性層２０２は、両極のキャリア(正孔と電子)を狭い範囲に閉じ込めて再結合確率を上げるため、活性層２０２がない場合に比べて発光効率を上げることが可能となる。 The active layer 202 is not necessarily provided. However, since the active layer 202 confines bipolar carriers (holes and electrons) in a narrow range to increase the recombination probability, the luminous efficiency can be increased as compared with the case where the active layer 202 is not provided.
　図１～４に示した発光素子２００においては、半導体コア２０１の上記ｘｙ断面の形状を、中央の対向する２辺が長い六角形としている。図５はその六角形状に代わる他のｘｙ断面の形状の例を示しており、（Ａ）は長四角形、（Ｂ）は楕円、（Ｃ）は十二角形である。もちろん、これらは一例であって、ｘｙ断面は他の細長い形状とすることができる。例えば、底辺Ｌ１と高さＬ２との関係が２×Ｌ２≦Ｌ１≦１０００×Ｌ２を満たす二等辺三角形であってもよい。つまり、２×Ｌ２≦Ｌ１≦１０００×Ｌ２を満たす限り、ｘｙ断面は如何なる形状であってもよい。 In the light emitting device 200 shown in FIGS. 1 to 4, the shape of the xy cross section of the semiconductor core 201 is a hexagonal shape with two long opposite sides at the center. FIG. 5 shows an example of the shape of another xy cross-section in place of the hexagonal shape, where (A) is a long rectangle, (B) is an ellipse, and (C) is a dodecagon. Of course, these are only examples, and the xy cross section may have other elongated shapes. For example, an isosceles triangle in which the relationship between the base L1 and the height L2 satisfies 2 × L2 ≦ L1 ≦ 1000 × L2 may be used. That is, as long as 2 × L2 ≦ L1 ≦ 1000 × L2 is satisfied, the xy cross section may have any shape.
　次に、図７～２０に示す工程図に沿って、上記構成の発光素子を複数個備えた発光装置の製造方法を説明する。なお、図７～１４において、（Ａ）はｘｚ断面を、（Ｂ）はｙｚ断面を、（Ｃ）はｘｙ断面を示す。 Next, a method for manufacturing a light-emitting device including a plurality of light-emitting elements having the above-described structure will be described with reference to process diagrams shown in FIGS. 7 to 14, (A) shows the xz section, (B) shows the yz section, and (C) shows the xy section.
　以下の説明では、ｎ型の半導体コア２０１の材料としてｎ型ＧａＮを、活性層２０２の材料として多重量子井戸を構成するＩｎＧａＮ／ＧａＮを、ｐ型半導体層２０３の材料としてｐ型ＡｌＧａＮとｐ型ＧａＮ（２層構造）を、透明導電膜（導電層）２０４の材料としてＩＴＯを用いることとするが、上述の通り、これらの材料は限定的なものではなく、他の材料を使用してもよい。 In the following description, n-type GaN is used as the material of the n-type semiconductor core 201, InGaN / GaN constituting the multiple quantum well is used as the material of the active layer 202, and p-type AlGaN and p-type are used as the material of the p-type semiconductor layer 203. GaN (two-layer structure) is used as the material of the transparent conductive film (conductive layer) 204, but as described above, these materials are not limited, and other materials may be used. Good.
　まず、図７に示すように、サファイア基板（以下、単に「基板」ともいう）２１０の主面上にｎ型ＧａＮ膜２０１Ａを形成する。ｎ型ＧａＮ膜２０１Ａの厚みは、例えば、３０μｍである。ｎ型ＧａＮ膜２０１Ａを形成する方法としては、例えば、ＨＶＰＥ（Hydride Vapor Phase Epitaxy）法、ＭＯＣＶＤ（Metal Organic Chemical Vapor Deposition）法、ＭＢＥ（Molecular Beam Epitaxy）法等がある。このｎ型ＧａＮ膜２０１Ａが加工されて、最終的に半導体コア２０１となるのである。 First, as shown in FIG. 7, an n-type GaN film 201 </ b> A is formed on the main surface of a sapphire substrate (hereinafter also simply referred to as “substrate”) 210. The thickness of the n-type GaN film 201A is, for example, 30 μm. Examples of the method for forming the n-type GaN film 201A include HVPE (Hydride （Vapor Phase Epitaxy) method, MOCVD (Metal Organic Chemical Vapor Deposition) method, MBE (Molecular Beam Epitaxy) method and the like. This n-type GaN film 201A is processed to finally become the semiconductor core 201.
　続いて、図８に示すように、ｎ型ＧａＮ膜２０１Ａ上に、ｙ方向に長い複数の板状のマスク２２０を形成する。マスク２２０は、酸化シリコン（ＳｉＯ２）膜である。マスク２２０は、以下のようにして形成される。先ず、酸化シリコン膜をｎ型ＧａＮ膜２０１Ａの表面全体に形成する。酸化シリコン膜を形成する方法としては、例えば、プラズマＣＶＤ（Chemical Vapor Deposition）法、スパッタリング法等がある。ｎ型ＧａＮ膜２０１Ａの表面全体に形成された酸化シリコン膜を、フォトリソグラフィ法により、パターニングする。その結果、酸化シリコン膜からなる複数の板状のマスク２２０が得られる。マスク２２０のパターンは、上記半導体コア２０１のｘｙ断面の形状を定めるもので、上述した通り、各種の多角形状または楕円形状とできるが、ここでは、図４に示す中央の対向する２辺が他の辺よりも長い六角形とする。 Subsequently, as shown in FIG. 8, a plurality of plate-like masks 220 that are long in the y direction are formed on the n-type GaN film 201A. The mask 220 is a silicon oxide (SiO 2 ) film. The mask 220 is formed as follows. First, a silicon oxide film is formed on the entire surface of the n-type GaN film 201A. Examples of the method for forming the silicon oxide film include a plasma CVD (Chemical Vapor Deposition) method and a sputtering method. The silicon oxide film formed on the entire surface of the n-type GaN film 201A is patterned by photolithography. As a result, a plurality of plate-like masks 220 made of a silicon oxide film are obtained. The pattern of the mask 220 determines the shape of the xy cross section of the semiconductor core 201 and can be various polygonal shapes or elliptical shapes as described above. Here, the two opposite sides at the center shown in FIG. The hexagon is longer than the side.
　次に、反応性イオンエッチング（ドライエッチングの一種）により、ｎ型ＧａＮ膜２０１Ａをエッチングする。この結果、図９に示すように、板状のｎ型ＧａＮ膜２０１Ｂが複数個（図９では３個のみ示す）形成される。この段階では、マスク２２０が残存している。エッチングガスとしては、例えば、塩素ガス（Ｃｌ２）とアルゴンガス（Ａｒ）との混合ガスがある。塩素ガスとアルゴンガスとの体積比率は、例えば、２：３である。板状のｎ型ＧａＮ膜２０１Ｂのｚ方向の長さは、例えば３０μｍである。 Next, the n-type GaN film 201A is etched by reactive ion etching (a kind of dry etching). As a result, as shown in FIG. 9, a plurality of plate-like n-type GaN films 201B (only three are shown in FIG. 9) are formed. At this stage, the mask 220 remains. As an etching gas, for example, there is a mixed gas of chlorine gas (Cl 2 ) and argon gas (Ar). The volume ratio of chlorine gas and argon gas is, for example, 2: 3. The length in the z direction of the plate-like n-type GaN film 201B is, for example, 30 μm.
　続いて、ウェットエッチングにより、板状のｎ型ＧａＮ膜２０１Ｂの側面をエッチングする。これにより、各板状のｎ型ＧａＮ膜２０１Ｂの側面は、サファイア基板２１０の主面に垂直となる。エッチング溶液は、例えば、７０℃に加熱した水酸化テトラメチルアンモニウム（ＴＭＡＨ）水溶液（質量パーセント濃度：５％）である。エッチング時間は、例えば、３時間である。図１０に示すように、上部のマスク２２０を残したままエッチングすることで、ｎ型ＧａＮ膜２０１Ｂの側面を垂直とできるのである。マスク２２０を用いずに同様のエッチングを行うと、側面が垂直では無く、テーパー構造となってしまう。 Subsequently, the side surface of the plate-like n-type GaN film 201B is etched by wet etching. Thereby, the side surface of each plate-like n-type GaN film 201 </ b> B is perpendicular to the main surface of the sapphire substrate 210. The etching solution is, for example, an aqueous tetramethylammonium hydroxide (TMAH) solution (mass percent concentration: 5%) heated to 70 ° C. The etching time is, for example, 3 hours. As shown in FIG. 10, by etching while leaving the upper mask 220, the side surface of the n-type GaN film 201B can be made vertical. If the same etching is performed without using the mask 220, the side surface is not vertical and a tapered structure is formed.
　次に、例えばフッ化水素（ＨＦ）溶液を用いて、マスク２２０を除去する。図１１はマスク２２０除去後の状態を示している。この段階では、柱状のｎ型ＧａＮ膜２０１Ｂの側面は基板２１０に対して垂直になったものの、表面には凹凸が存在している。 Next, the mask 220 is removed using, for example, a hydrogen fluoride (HF) solution. FIG. 11 shows a state after the mask 220 is removed. At this stage, the side surface of the columnar n-type GaN film 201B is perpendicular to the substrate 210, but there are irregularities on the surface.
　そこで、板状のｎ型ＧａＮ膜２０１Ｂの表面を平坦にするために、ＭＯＣＶＤ装置を用いてｎ型ＧａＮ膜２０１Ｂ上にｎ型ＧａＮ層を形成する。これにより、半導体コア２０１が完成する。ｎ型ＧａＮ層を形成する際の基板温度（成長温度）は例えば８５０～１１００度である。 Therefore, in order to flatten the surface of the plate-like n-type GaN film 201B, an n-type GaN layer is formed on the n-type GaN film 201B using an MOCVD apparatus. Thereby, the semiconductor core 201 is completed. The substrate temperature (growth temperature) when forming the n-type GaN layer is, for example, 850 to 1100 degrees.
　このｎ型ＧａＮ層の形成に続いて、同じくＭＯＣＶＤ装置を用いて、活性層２０２としてＩｎＧａＮ（井戸層）とＧａＮ（障壁層）とを交互に積層した多重量子井戸層を形成する。多重量子井戸層を形成する際の基板温度（成長温度）は例えば６５０～８５０度である。 Subsequent to the formation of the n-type GaN layer, a multi-quantum well layer in which InGaN (well layers) and GaN (barrier layers) are alternately stacked is formed as the active layer 202 using the MOCVD apparatus. The substrate temperature (growth temperature) when forming the multiple quantum well layer is, for example, 650 to 850 degrees.
　続いて、ＭＯＣＶＤ装置を用いて、活性層２０２の上に、ｐ型の半導体層２０３としてｐ型ＡｌＧａＮ層とｐ型ＧａＮ層との２層構造を形成する。この際の基板温度（成長温度）は例えば８００～１０５０度である。図１２はｐ型の半導体層２０３形成後の状態を示す。 Subsequently, a two-layer structure of a p-type AlGaN layer and a p-type GaN layer is formed as a p-type semiconductor layer 203 on the active layer 202 using an MOCVD apparatus. The substrate temperature (growth temperature) at this time is, for example, 800 to 1050 degrees. FIG. 12 shows a state after the p-type semiconductor layer 203 is formed.
　次に、図１３に示すように、ｐ型の半導体層２０３を構成するｐ型ＧａＮ層上にＩＴＯ膜を形成する。これにより、透明導電膜２０４がｐ型ＧａＮ層の表面に形成される。なお、この工程後、図１３において、上部（基板２１０の反対側の部分）の面をＣＭＰ等で削り、発光面を側面に限定してもよい。また、マスク２２０を除去せずにこの工程まで行うことでも、発光面を側面に限定することが出来る。もちろん、発光面を側面に限定しない場合には、このようなことは不要である。 Next, as shown in FIG. 13, an ITO film is formed on the p-type GaN layer constituting the p-type semiconductor layer 203. Thereby, the transparent conductive film 204 is formed on the surface of the p-type GaN layer. Note that after this step, in FIG. 13, the upper surface (the portion on the opposite side of the substrate 210) may be cut by CMP or the like, and the light emitting surface may be limited to the side surface. Further, the light emitting surface can be limited to the side surface by performing this process without removing the mask 220. Of course, this is not necessary when the light emitting surface is not limited to the side surface.
　続いて、図１４に示すように、複数の板状の発光素子（半導体コア２０１の露出部分２０５形成前のもの）２００Ａをサファイア基板２１０から分離する。具体的には、先ず、複数の板状の発光素子２００Ａを有機膜（例えば、ワックス）等に埋め込む。続いて、サファイア基板２１０の裏面からレーザを照射する。これにより、サファイア基板２１０と半導体コア２０１との界面を溶かして、複数の板状の発光素子２００Ａを基板２１０から剥離する（レーザリフトオフ）。その後、サファイア基板２１０をアセトン溶液に入れ、有機膜を溶かす。その結果、複数の板状の発光素子２００Ａがサファイア基板２１０から分離される。続いて、遠心分離機により、複数の発光素子２００Ａを沈殿させ、上澄み液を取り除く。その後、アセトンを加え、上記の処理を繰り返し、複数の発光素子２００Ａが入ったアセトン溶液から有機膜の成分を取り除く。同様の方法により、複数の発光素子２００Ａが入った溶液をアセトン溶液からイソプロピルアルコール（ＩＰＡ）に置換する。その後、同様の方法により、複数の発光素子２００Ａが入った溶液をＩＰＡから水に置換する。 Subsequently, as shown in FIG. 14, a plurality of plate-like light emitting elements (before forming the exposed portion 205 of the semiconductor core 201) 200 </ b> A is separated from the sapphire substrate 210. Specifically, first, a plurality of plate-like light emitting elements 200A are embedded in an organic film (for example, wax). Subsequently, laser is irradiated from the back surface of the sapphire substrate 210. As a result, the interface between the sapphire substrate 210 and the semiconductor core 201 is melted, and the plurality of plate-like light emitting elements 200A are peeled from the substrate 210 (laser lift-off). Thereafter, the sapphire substrate 210 is put into an acetone solution to dissolve the organic film. As a result, the plurality of plate-like light emitting elements 200 </ b> A are separated from the sapphire substrate 210. Subsequently, the plurality of light emitting elements 200A are precipitated by a centrifuge, and the supernatant is removed. Thereafter, acetone is added, and the above treatment is repeated, and the components of the organic film are removed from the acetone solution containing the plurality of light emitting elements 200A. By a similar method, the solution containing the plurality of light emitting elements 200A is replaced with isopropyl alcohol (IPA) from the acetone solution. Thereafter, the solution containing the plurality of light emitting elements 200A is replaced with water from IPA by the same method.
　なお、複数の発光素子２００Ａをサファイア基板２１０から分離する方法は、例えば、超音波等により、各発光素子２００Ａを根本から折る方法等であってもよい。 It should be noted that the method of separating the plurality of light emitting elements 200A from the sapphire substrate 210 may be, for example, a method of folding each light emitting element 200A from the root using ultrasonic waves or the like.
　続いて、図１５（Ｂ）に示すように、半導体装置のための基板の一例として、発光素子配置用の電極３１１、３２１が形成されたガラス基板３０１に発光素子２００Ａを配置する。図１５（Ｂ）に示す例では、複数の発光素子２００Ａは、２つの領域に分かれて配置される。理解を容易にするため、この例では、１つの領域に６つの発光素子２００Ａが配置されているが、１つの領域に配置される発光素子２００Ａの数及び配置領域の数は、任意である。ガラス基板に代えて他の透光性を有する絶縁性基板を用いてもよい。用途に応じては、透光性を有する基板である必要は無く、光反射用の金属が成膜されたガラス基板や半導体基板等を用いてもよい。 Subsequently, as shown in FIG. 15B, as an example of a substrate for a semiconductor device, a light emitting element 200A is placed on a glass substrate 301 on which light emitting element placement electrodes 311 and 321 are formed. In the example shown in FIG. 15B, the plurality of light-emitting elements 200A are arranged in two regions. In order to facilitate understanding, in this example, six light emitting elements 200A are arranged in one area, but the number of light emitting elements 200A arranged in one area and the number of arrangement areas are arbitrary. Instead of the glass substrate, another insulating substrate having translucency may be used. Depending on the application, it is not necessary to use a light-transmitting substrate, and a glass substrate, a semiconductor substrate, or the like on which a metal for light reflection is formed may be used.
　図１５（Ａ）は発光素子２００Ａを配置する前のガラス基板３０１を示す。ガラス基板３０１の主面近くに形成された配置用の電極３１０は、連結電極３１１と複数（この例では２個）の駆動電極３１２とを含んでいる。各駆動電極３１２は本体部３１２Ａと複数（この例では６個）の凸部３１２Ｂとを含んでいる。同様に、もう一方の配置用の電極３２０は、連結電極３１１と対向する位置に配置された連結電極３２１と複数（この例では２個）の駆動電極３２２とを含んでいる。各駆動電極３２２は本体部３２２Ａと複数（この例では６個）の凸部３２２Ｂとを含んでいる。 FIG. 15A shows the glass substrate 301 before the light emitting element 200A is arranged. The arrangement electrode 310 formed near the main surface of the glass substrate 301 includes a connection electrode 311 and a plurality (two in this example) of drive electrodes 312. Each drive electrode 312 includes a main body 312A and a plurality (six in this example) of convex portions 312B. Similarly, the other arrangement electrode 320 includes a connection electrode 321 disposed at a position facing the connection electrode 311 and a plurality (two in this example) of drive electrodes 322. Each drive electrode 322 includes a main body portion 322A and a plurality (six in this example) of convex portions 322B.
　図１６は、ガラス基板３０１上に配置された複数の発光素子２００Ａの一つを示す断面図である。図１６から分かるように、発光素子２００Ａは、ｙｚ平面に平行な側面（最も広い側面）をガラス基板３０１の表面に接触させた状態で配置される。そして、各発光素子２００Ａのｚ方向の２つの端部は、駆動電極３１２の凹部３１２Ｂと駆動電極３２２Ｂ上に重なっている。 FIG. 16 is a cross-sectional view showing one of the plurality of light emitting elements 200A arranged on the glass substrate 301. As can be seen from FIG. 16, the light emitting element 200 </ b> A is arranged in a state where a side surface (widest side surface) parallel to the yz plane is in contact with the surface of the glass substrate 301. The two end portions in the z direction of each light emitting element 200A overlap the concave portion 312B of the drive electrode 312 and the drive electrode 322B.
　ガラス基板３０１上に複数の発光素子２００Ａを配列させる方法としては例えば以下のものがある。 Examples of a method for arranging a plurality of light emitting elements 200A on the glass substrate 301 include the following.
　複数の発光素子２００Ａが入った水でガラス基板３０１の主面を覆う。具体的には、先ず、ガラス基板３０１上に水を流す。この水に対して、複数の発光素子２００Ａが入った水を少しずつ注入する。ガラス基板３０１の主面を覆う水は、複数の発光素子２００Ａが自由に移動できる程度の量であればよい。 The main surface of the glass substrate 301 is covered with water containing a plurality of light emitting elements 200A. Specifically, first, water is caused to flow on the glass substrate 301. Water containing a plurality of light emitting elements 200A is injected little by little into this water. The amount of water covering the main surface of the glass substrate 301 may be an amount that allows the plurality of light emitting elements 200A to freely move.
　続いて、電極３１０と電極３２０とに対して異なる電圧を印加する。これにより、電極３１０及び電極３２０の一方に負電荷が誘起され、他方の正電荷が誘起される。この状態で、発光素子２００Ａが電極３１０（より正確には凸部３１２Ｂ）及び電極３２０（より正確には凸部３２２Ｂ）に近づくと、発光素子２００Ａのうち、負電荷が誘起された電極に近いほうの軸方向（ここではｚ方向）端部には、静電誘導により、正電荷が誘起される。同様に、他の軸方向端部には、負電荷が誘起される。その結果、各電極３１０，３２０と発光素子２００Ａとの間に引力が働く。その際、発光素子２００Ａは、電極３１０と電極３２０との間に生じる電気力線に沿って配置される。また、各発光素子２００Ａに誘起された電荷は略等しい。そのため、電荷による反発力により、所定の方向に並ぶ２つの発光素子２００Ａの間隔は略同じとなる。 Subsequently, different voltages are applied to the electrode 310 and the electrode 320. Thereby, a negative charge is induced in one of the electrode 310 and the electrode 320, and the other positive charge is induced. In this state, when the light emitting element 200A approaches the electrode 310 (more precisely, the convex portion 312B) and the electrode 320 (more precisely, the convex portion 322B), the light emitting element 200A is close to the electrode in which a negative charge is induced. A positive charge is induced at the end in the axial direction (z direction in this case) by electrostatic induction. Similarly, negative charges are induced at the other axial ends. As a result, an attractive force acts between each electrode 310, 320 and the light emitting element 200A. At that time, the light emitting element 200 </ b> A is disposed along the lines of electric force generated between the electrode 310 and the electrode 320. Further, the charges induced in each light emitting element 200A are substantially equal. Therefore, the interval between the two light emitting elements 200A arranged in a predetermined direction is substantially the same due to the repulsive force due to the electric charge.
　続いて、複数の発光素子２００Ａが入った溶液を水からＩＰＡに置換する。例えば、水にＩＰＡを注ぐことで、複数の発光素子２００Ａが入った溶液を水からＩＰＡに置換できる。 Subsequently, the solution containing the plurality of light emitting elements 200A is replaced with IPA from water. For example, by pouring IPA into water, a solution containing a plurality of light emitting elements 200A can be replaced with IPA from water.
　続いて、ガラス基板３０１を加熱することにより、複数の発光素子２００Ａが入った溶液（ＩＰＡ）を蒸発させて、乾燥させる。その結果、図１５（Ｂ）に示すように、複数の発光素子２００Ａがガラス基板３０１上で所定の位置に配置される。 Subsequently, by heating the glass substrate 301, the solution (IPA) containing the plurality of light emitting elements 200A is evaporated and dried. As a result, as shown in FIG. 15B, the plurality of light emitting elements 200A are arranged at predetermined positions on the glass substrate 301.
　続いて、各発光素子２００Ａのｚ方向一端部の側面において、透明導電膜２０４、p型の半導体層２０３、活性層２０２を除去し、半導体コア２０１を露出させる（図１８参照）。この結果、各発光素子２００Ａは露出部分２０５を有する発光素子２００となる。透明導電膜２０４、p型の半導体層２０３、活性層２０２を除去する方法としては、例えば、塩素ガスを用いた反応性イオンエッチング等がある。この工程において、半導体コア２０１の一部も除去してもよい。 Subsequently, the transparent conductive film 204, the p-type semiconductor layer 203, and the active layer 202 are removed on the side surface of one end portion in the z direction of each light emitting element 200A to expose the semiconductor core 201 (see FIG. 18). As a result, each light emitting element 200 </ b> A becomes the light emitting element 200 having the exposed portion 205. As a method for removing the transparent conductive film 204, the p-type semiconductor layer 203, and the active layer 202, for example, there is reactive ion etching using chlorine gas. In this step, a part of the semiconductor core 201 may be removed.
　この半導体コア露出工程において、露出部分２０５が形成される発光素子２００Ａの側面は従来の棒状発光素子よりも拡張された幅（ｙ方向の長さ）を有するため、棒状発光素子よりも公差を大きくとることができる。 In this semiconductor core exposing step, the side surface of the light emitting element 200A where the exposed portion 205 is formed has a wider width (length in the y direction) than the conventional bar light emitting element, and therefore has a larger tolerance than the bar light emitting element. Can take.
　続いて、ガラス基板３０１の主面上にスリットコーターで保護膜３３０を形成する（図１７～１９参照）。これにより、各発光素子２００が保護膜３３０で覆われる。保護膜３３０の材料として、例えば、透明の絶縁膜である酸化シリコン（ＳｉＯ２）を用いることができる。 Subsequently, a protective film 330 is formed on the main surface of the glass substrate 301 by a slit coater (see FIGS. 17 to 19). Thereby, each light emitting element 200 is covered with the protective film 330. As a material of the protective film 330, for example, silicon oxide (SiO 2 ) that is a transparent insulating film can be used.
　その後、コンタクトホール３３１、３３２を形成する（図１７～１９参照）。コンタクトホール３３１は半導体コア２０１の露出部分２０５に通じ、コンタクトホール３３２は透明導電膜２０４に通じている。コンタクトホール３３１、３３２は、例えば、フォトリソグラフィ法によって形成される。このコンタクトホール形成工程において、発光素子２００の側面は従来の棒状発光素子よりも拡張された幅（ｙ方向の長さ）を有するため、棒状発光素子よりもコンタクトホール形成工程における公差を大きくとることができる。 Thereafter, contact holes 331 and 332 are formed (see FIGS. 17 to 19). The contact hole 331 communicates with the exposed portion 205 of the semiconductor core 201, and the contact hole 332 communicates with the transparent conductive film 204. The contact holes 331 and 332 are formed by, for example, a photolithography method. In this contact hole forming step, the side surface of the light emitting element 200 has a wider width (length in the y direction) than the conventional bar light emitting element, so that the tolerance in the contact hole forming step is larger than that of the bar light emitting element. Can do.
　続いて、図１７～１９に示すように、第１配線３４０及び第２配線３５０を形成する。具体的には、先ず、保護膜３３０の表面全体に金属膜（例えば、Ｔｉ層とＡｌ層との積層膜）を形成する。続いて、フォトリソグラフィ法により、当該金属膜をパターニングする。その結果、コンタクトホール３３１内のコンタクトメタル３４１を含む第１配線３４０及びコンタクトホール３３２内のコンタクトメタル３５１を含む第２配線３５０が形成され、発光装置が得られる。コンタクトメタル３４１は半導体コア２０１の露出部分２０５と接し、コンタクトメタル３５１は透明導電膜２０４に接している。 Subsequently, as shown in FIGS. 17 to 19, a first wiring 340 and a second wiring 350 are formed. Specifically, first, a metal film (for example, a laminated film of a Ti layer and an Al layer) is formed on the entire surface of the protective film 330. Subsequently, the metal film is patterned by photolithography. As a result, the first wiring 340 including the contact metal 341 in the contact hole 331 and the second wiring 350 including the contact metal 351 in the contact hole 332 are formed, and a light emitting device is obtained. The contact metal 341 is in contact with the exposed portion 205 of the semiconductor core 201, and the contact metal 351 is in contact with the transparent conductive film 204.
　図１７～１９は一つの発光素子のみを示しているが、実際には、図１５（Ｂ）に示すようにガラス基板３０１上に配列された複数の発光素子２００Ａについて同時に同じ処理がなされている。この結果、配線工程が完了すると、図２０に示すように、ガラス基板３０１と配線された発光素子とを含む面発光基板（発光装置）４００を得ることが出来る。この面発光基板４００を分割することにより、所望の大きさの分割基板（発光装置）４３０Ａ～４３０Ｅを得ることができる。 Although FIGS. 17 to 19 show only one light emitting element, in practice, the same processing is simultaneously performed on a plurality of light emitting elements 200A arranged on the glass substrate 301 as shown in FIG. 15B. . As a result, when the wiring process is completed, a surface light emitting substrate (light emitting device) 400 including the glass substrate 301 and the wired light emitting elements can be obtained as shown in FIG. By dividing the surface light emitting substrate 400, divided substrates (light emitting devices) 430A to 430E having a desired size can be obtained.
　上記第１実施形態では、エッチングにより半導体コアの板状構造を形成しているが、エッチングに代わり、選択成長法やＶＬＳ法等を用いてもよい。 In the first embodiment, the plate-like structure of the semiconductor core is formed by etching, but instead of etching, a selective growth method, a VLS method, or the like may be used.
　以上、活性層２０２を含む発光素子２００を複数備えた発光装置の製造方法について説明したが、発光素子２００が活性層２０２を含まない場合には、活性層２０２を形成する工程が不要となり、図１２に示す工程において、ｎ型ＧａＮ膜を形成した後に、ｐ型の半導体層２０３を形成することになる。図２１はこのような場合の図１３に対応する図である。 The method for manufacturing a light emitting device including a plurality of light emitting elements 200 including the active layer 202 has been described above. However, when the light emitting element 200 does not include the active layer 202, the step of forming the active layer 202 is not necessary, In the step shown in FIG. 12, after the n-type GaN film is formed, the p-type semiconductor layer 203 is formed. FIG. 21 is a diagram corresponding to FIG. 13 in such a case.
　上記の例においては、発光素子２００Ａのｚ方向（図１３においては、サファイア基板２１０に垂直な方向）の長さがｙ方向（図１３においては、サファイア基板２１０の主面に平行な方向）の長さよりも長いため、発光素子を配列する工程において、ｚ方向において対向する発光素子の２つの端部を、駆動電極３１２の凹部３１２Ｂと駆動電極３２２Ｂ上に重ねて配置し、ｚ方向の端部付近に露出部分２０５を形成し、ｚ方向両側において第１配線３４０と第２配線３５０を形成した。 In the above example, the length of the light emitting element 200A in the z direction (the direction perpendicular to the sapphire substrate 210 in FIG. 13) is the y direction (the direction parallel to the main surface of the sapphire substrate 210 in FIG. 13). Since the length is longer than the length, in the step of arranging the light emitting elements, two end portions of the light emitting elements facing each other in the z direction are arranged so as to overlap the concave portion 312B and the driving electrode 322B of the driving electrode 312 and end portions in the z direction. An exposed portion 205 was formed in the vicinity, and a first wiring 340 and a second wiring 350 were formed on both sides in the z direction.
　一方、発光素子２００Ａのｙ方向（図１３においては、サファイア基板２１０の主面に平行な方向）の長さがｚ方向（図１３においては、サファイア基板２１０に垂直な方向）の長さよりも長い場合には、発光素子を配列する工程において、ｙ方向において対向する発光素子の２つの端部を駆動電極３１２の凹部３１２Ｂと駆動電極３２２Ｂ上に重なるように配置し、ｙ方向の一端部付近に露出部分２０５を形成し、ｙ方向両側において第１配線３４０と第２配線３５０を形成するのが好都合である。この場合、ｙ方向が請求項１に記載の第１の方向であり、ｚ方向が請求項１に記載の第２の方向となる。 On the other hand, the length of the light emitting element 200A in the y direction (the direction parallel to the main surface of the sapphire substrate 210 in FIG. 13) is longer than the length in the z direction (the direction perpendicular to the sapphire substrate 210 in FIG. 13). In this case, in the step of arranging the light emitting elements, two end portions of the light emitting elements facing in the y direction are arranged so as to overlap the concave portion 312B of the drive electrode 312 and the drive electrode 322B, and near one end portion in the y direction. It is convenient to form the exposed portion 205 and form the first wiring 340 and the second wiring 350 on both sides in the y direction. In this case, the y direction is the first direction described in claim 1, and the z direction is the second direction described in claim 1.
　図２２は、図２１（Ｃ）に示される発光素子の断面の輪郭形状の代替例を示す、図５と同様の図である。 FIG. 22 is a view similar to FIG. 5, showing an alternative example of the cross-sectional contour shape of the light-emitting element shown in FIG.
　図２３は図１３（Ａ）及び図２１（Ａ）に示される断面の輪郭形状の代替例を示す。また、図２４は図１３（Ｂ）及び図２１（Ｂ）に示される断面の輪郭形状の代替例を示す。図１３（Ａ）及び図２１（Ａ）ならびに図１３（Ｂ）及び図２１（Ｂ）に示される断面形状は四角形であるが、代替例では上部に傾斜面を有する形状である。これ以外にも、上面が弧を描いていてもよい。 FIG. 23 shows an alternative example of the profile of the cross section shown in FIGS. 13 (A) and 21 (A). FIG. 24 shows an alternative example of the profile of the cross section shown in FIGS. 13 (B) and 21 (B). The cross-sectional shapes shown in FIGS. 13A and 21A, and FIGS. 13B and 21B are quadrilateral, but in an alternative example, the shape has an inclined surface at the top. In addition, the upper surface may draw an arc.
　図２５は第１実施形態による配線のコンタクトメタルと半導体コアの露出部との接触面積増大効果を示すグラフで、断面が正六角形の棒状発光素子における接触面積に対して、上記第１実施形態に係る発光素子（つまり２辺だけが長い六角形状）の接触面積が何倍になるかを、棒状発光素子の長さ（ｚ方向の長さ）が１００μｍ、５０μｍ、２０μｍの場合について示している。グラフの縦軸は第１実施形態による接触面積増加量（倍）つまり（第１実施形態に係る発光素子における接触面積）／（棒状発光素子における接触面積）を表す。グラフの横軸は、正六角形の棒状発光素子の一辺の長さ（μｍ）を表す。それぞれの場合について、第１実施形態に係る発光素子は断面六角形の短辺の長さを１μｍに固定し、棒状発光素子と同様の発光面積を有する発光素子としてサイズの最適化を行ったものである。 FIG. 25 is a graph showing the effect of increasing the contact area between the contact metal of the wiring and the exposed portion of the semiconductor core according to the first embodiment. The contact area of the rod-shaped light emitting element having a regular hexagonal cross section is the same as that of the first embodiment. It shows how many times the contact area of such a light emitting element (that is, a hexagonal shape having only two sides) is increased when the length of the rod-shaped light emitting element (length in the z direction) is 100 μm, 50 μm, and 20 μm. The vertical axis of the graph represents the contact area increase amount (times) according to the first embodiment, that is, (contact area in the light emitting device according to the first embodiment) / (contact area in the bar light emitting device). The horizontal axis of the graph represents the length (μm) of one side of a regular hexagonal bar light emitting element. In each case, the light-emitting element according to the first embodiment is a light-emitting element having a light-emitting area similar to that of a rod-shaped light-emitting element with a short side of hexagonal cross section fixed to 1 μm. It is.
　このグラフから、第１実施形態に係る発光素子は、棒状発光素子に比べて、同等の発光面積であっても、接触面積が２．５倍以上に増えることが分かる。この接触面積増大効果は、一辺の長さ換言すれば直径が小さく、長さがより長い棒状発光素子に対して、より顕著であることがわかる。特に直径（換言すれば、一辺の長さ）が小さいものほど接触抵抗の影響が顕著に出てくるため、本発明が効果的であることがわかる。 From this graph, it can be seen that the contact area of the light emitting device according to the first embodiment is increased by 2.5 times or more even if the light emitting area is equivalent to that of the rod-shaped light emitting device. It can be seen that the effect of increasing the contact area is more conspicuous with respect to a rod-like light emitting device having a smaller side length, in other words, a longer diameter. In particular, the smaller the diameter (in other words, the length of one side), the more the influence of the contact resistance appears, and it can be seen that the present invention is effective.
　以上より明らかなように、第１実施形態（変形例を含む）によれば、従来の棒状の半導体コアを有する発光素子に比べて、発光面積を実質的に変えることなく、発光素子２００へのコンタクトプロセスのための公差を大きく取ることができ、この発光素子２００及びこの発光素子２００を用いた発光装置４００（４３０Ａ～４３０Ｅ）の歩留まりを向上できる。それと同時に、従来の棒状の半導体コアを用いた発光装置に比べて、コンタクトメタル３４１と半導体コア２０１の露出部分２０５との接触面積を大きくすることが可能となるため、その分接触抵抗を小さくでき、発光効率の向上及び消費電力の低減が可能となる。 As is clear from the above, according to the first embodiment (including the modification), the light emitting element 200 can be applied to the light emitting element 200 without substantially changing the light emitting area as compared with the light emitting element having the conventional rod-shaped semiconductor core. The tolerance for the contact process can be increased, and the yield of the light emitting element 200 and the light emitting device 400 (430A to 430E) using the light emitting element 200 can be improved. At the same time, the contact area between the contact metal 341 and the exposed portion 205 of the semiconductor core 201 can be increased as compared with a conventional light emitting device using a rod-shaped semiconductor core, and the contact resistance can be reduced accordingly. Thus, it is possible to improve luminous efficiency and reduce power consumption.
　また、配線３４０のコンタクトメタル３４１と接触する露出部分２０５は半導体コア２０１の外周面２０１３の一部のみであり、外周面２０１３の他の部分は第２導電型の半導体層２０３で覆われているため、特許文献２の板状構造と比べると、同じ発光面積および同じ接触面積であっても、発光素子２００のサイズを小さくすることが可能である上、駆動時の電流方向を制御する回路は不要である。 Further, the exposed portion 205 of the wiring 340 that contacts the contact metal 341 is only a part of the outer peripheral surface 2013 of the semiconductor core 201, and the other portion of the outer peripheral surface 2013 is covered with the second conductivity type semiconductor layer 203. Therefore, as compared with the plate-like structure of Patent Document 2, it is possible to reduce the size of the light emitting element 200 even with the same light emitting area and the same contact area, and the circuit for controlling the current direction during driving is as follows. It is unnecessary.
　〔第２実施形態〕
　図２６はこの発明の第２実施形態の照明装置に用いられる発光装置の平面図を示し、図２７は上記発光装置の側面図を示している。 [Second Embodiment]
FIG. 26 shows a plan view of a light emitting device used in the illumination device of the second embodiment of the present invention, and FIG. 27 shows a side view of the light emitting device.
　この第２実施形態の照明装置に用いられる発光装置５００は、図２６,図２７に示すように、正方形状の放熱板５０１上に、１０個以上の板状の発光素子(図示せず)が配置された円形状の絶縁性基板５０２が実装されている。ここで、上記板状の発光素子は第１実施形態で説明したいずれかの板状の発光素子であり、円形状の絶縁性基板５０２として、第１実施形態の発光装置の製造方法を用いて製造された１０個以上の発光素子が配置された分割基板４３０が使用できる。 As shown in FIGS. 26 and 27, the light emitting device 500 used in the illumination device of the second embodiment has ten or more plate-like light emitting elements (not shown) on a square heat sink 501. The arranged circular insulating substrate 502 is mounted. Here, the plate-like light-emitting element is any of the plate-like light-emitting elements described in the first embodiment, and the manufacturing method of the light-emitting device of the first embodiment is used as the circular insulating substrate 502. The divided substrate 430 on which 10 or more manufactured light emitting elements are arranged can be used.
　図２８は図２６,図２７に示す発光装置５００を用いた照明装置の一例としてのＬＥＤ電球５１０の側面図を示している。このＬＥＤ電球５１０は、図２８に示すように、外部のソケットに嵌めて商用電源に接続するための電源接続部としての口金５１１と、その口金５１１に一端が接続され、他端が徐々に拡径する円錐形状の放熱部５１２と、放熱部５１２の他端側を覆う透光部５１３とを備えている。上記放熱部５１２内に、絶縁性基板５０２を透光部５１３側に向けて発光装置５００を配置している。この発光装置５００は、上記第１実施形態の発光装置の製造方法により製造されたものを用いている。 FIG. 28 shows a side view of an LED bulb 510 as an example of a lighting device using the light emitting device 500 shown in FIGS. As shown in FIG. 28, the LED bulb 510 has a base 511 as a power supply connecting portion that is fitted in an external socket and connected to a commercial power source, and one end connected to the base 511, and the other end gradually expands. A conical heat radiation part 512 having a diameter and a light transmission part 513 covering the other end of the heat radiation part 512 are provided. In the heat radiating part 512, the light emitting device 500 is arranged with the insulating substrate 502 facing the light transmitting part 513 side. The light emitting device 500 is manufactured by the light emitting device manufacturing method of the first embodiment.
　上記構成の照明装置によれば、発光装置５００を用いることにより、歩留まりを向上できるとともに、接触抵抗低減による発光効率の高効率化・低消費電力化を実現できる。また、明るさのばらつきが少なくかつ長寿命化の照明装置を実現することができる。また、上記複数の発光素子が配置された絶縁性基板５０２を放熱板５０１上に取り付けることによって、放熱効果が向上する。 According to the illuminating device having the above configuration, by using the light emitting device 500, it is possible to improve the yield, and it is possible to realize high efficiency and low power consumption of light emission efficiency by reducing contact resistance. In addition, it is possible to realize an illumination device with little variation in brightness and having a long lifetime. Further, by attaching the insulating substrate 502 on which the plurality of light emitting elements are disposed on the heat dissipation plate 501, the heat dissipation effect is improved.
　〔第３実施形態〕
　図２９はこの発明の第３実施形態の発光装置を用いたバックライトの平面図を示している。 [Third Embodiment]
FIG. 29 is a plan view of a backlight using the light emitting device according to the third embodiment of the present invention.
　この第３実施形態のバックライト６００は、図２９に示すように、放熱板の一例としての長方形状の支持基板６０１上に、それぞれが１０個以上の板状の発光素子を備える複数の発光装置６０２が互いに所定の間隔をあけて格子状に実装されている。ここで、上記板状の発光素子は第１実施形態で説明したいずれかの板状の発光素子であり、発光装置６０２として、第１実施形態の発光装置の製造方法を用いて製造された１０個以上の板状の発光素子が配置された分割基板４３０が使用されている。 As shown in FIG. 29, the backlight 600 according to the third embodiment includes a plurality of light emitting devices each having 10 or more plate-like light emitting elements on a rectangular support substrate 601 as an example of a heat sink. 602 are mounted in a grid pattern at a predetermined interval from each other. Here, the plate-like light-emitting element is any of the plate-like light-emitting elements described in the first embodiment, and is manufactured as the light-emitting device 602 using the method for manufacturing the light-emitting device of the first embodiment. A divided substrate 430 on which one or more plate-like light emitting elements are arranged is used.
　本実施形態によれば、バックライト６００が発光装置６０２を用いることにより、歩留まりを向上できるとともに、接触抵抗低減による発光効率の高効率化・低消費電力化を実現できる。製造コストを低減でき、特性ばらつきを小さくして歩留まりを向上できる。また、明るさのばらつきが少なくかつ長寿命化の照明装置を実現することができる。また、上記発光装置６０２を支持基板６０１上に取り付けることによって、放熱効果が向上する。 According to the present embodiment, since the backlight 600 uses the light emitting device 602, it is possible to improve the yield, and to realize high efficiency and low power consumption of light emission efficiency by reducing contact resistance. Manufacturing cost can be reduced, characteristic variation can be reduced, and yield can be improved. In addition, it is possible to realize an illumination device with little variation in brightness and having a long lifetime. Further, by attaching the light emitting device 602 on the support substrate 601, the heat dissipation effect is improved.
　〔第４実施形態〕
　図３０はこの発明の第４実施形態の発光装置を用いたバックライトの平面図を示している。 [Fourth Embodiment]
FIG. 30 is a plan view of a backlight using the light emitting device according to the fourth embodiment of the present invention.
　この第４実施形態のバックライト６１０は、図３０に示すように、放熱板の一例としての長方形状の支持基板６１１上に、１つの大きな発光装置６１２が実装されている。この発光装置６１２は、上記第１実施形態で説明したいずれかの発光素子を備えている。ここでは、発光装置６１２は、上記第１実施形態の発光装置の製造方法により製造された分割基板４３０を用いている。 In the backlight 610 of the fourth embodiment, as shown in FIG. 30, one large light emitting device 612 is mounted on a rectangular support substrate 611 as an example of a heat sink. The light emitting device 612 includes any of the light emitting elements described in the first embodiment. Here, the light emitting device 612 uses the divided substrate 430 manufactured by the method for manufacturing the light emitting device of the first embodiment.
　本実施形態によれば、バックライト６１０が発光装置６１２を用いることにより、歩留まりを向上できるとともに、接触抵抗低減による発光効率の高効率化・低消費電力化を実現できる。また、明るさのばらつきが少なくかつ長寿命化の照明装置を実現することができる。また、また、上記発光装置６１２を支持基板６１１上に取り付けることによって、放熱効果が向上する。 According to the present embodiment, since the backlight 610 uses the light emitting device 612, the yield can be improved, and the light emission efficiency can be increased and the power consumption can be reduced by reducing the contact resistance. In addition, it is possible to realize an illumination device with little variation in brightness and having a long lifetime. Further, the heat radiation effect is improved by attaching the light emitting device 612 on the support substrate 611.
　〔第５実施形態〕
　図３１はこの発明の第５実施形態の発光装置を用いた表示装置の一例としての液晶パネルの平面図と側面図を示している。 [Fifth Embodiment]
FIG. 31 shows a plan view and a side view of a liquid crystal panel as an example of a display device using the light emitting device of the fifth embodiment of the present invention.
　この第５実施形態の液晶パネル６２０は、図３１に示すように、放熱板の一例としての長方形状の透明基板６２２の一方の面に、配線された複数の発光素子(図示せず)が配置されている。これらの発光素子は、上記第１実施形態において説明した板状の発光素子である。また、透明基板６２２は図１７に示すガラス基板３０１に対応している。これらの配線された複数の板状の発光素子を含む発光部分６２１と、透明基板６２２で１つの大きな発光装置を形成している。また、透明基板６２２の他方の面に、図示しない画素電極とＴＦＴ(Thin Film Transistor：薄膜トランジスタ)がマトリックス状に形成されている。そして、透明基板６２２の他方側に所定の間隔をあけて液晶封止板６２４が配置され、液晶封止板６２４と透明基板６２２との間に液晶６２３を封止している。 In the liquid crystal panel 620 of the fifth embodiment, as shown in FIG. 31, a plurality of wired light emitting elements (not shown) are arranged on one surface of a rectangular transparent substrate 622 as an example of a heat sink. Has been. These light emitting elements are the plate-like light emitting elements described in the first embodiment. The transparent substrate 622 corresponds to the glass substrate 301 shown in FIG. One light emitting device is formed by the light emitting portion 621 including the plurality of wired light emitting elements wired and the transparent substrate 622. On the other surface of the transparent substrate 622, pixel electrodes and TFTs (thin film transistors) (not shown) are formed in a matrix. A liquid crystal sealing plate 624 is disposed on the other side of the transparent substrate 622 with a predetermined interval, and the liquid crystal 623 is sealed between the liquid crystal sealing plate 624 and the transparent substrate 622.
　通常の液晶パネルは、液晶駆動基板とバックライトは分離されており、バックライトの光量ムラや発熱などの問題により、導光管や放熱素子の使用することでコストが上昇したり、液晶パネルを厚くなったりしていた。これに対して、上記構成の液晶パネル６２０によれば、従来の発光素子１個から得られる光量に対して複数の発光素子で構成されているので、光量ムラや発熱の問題が無いので、導光管や放熱素子を必要としない。そこで、液晶パネル大に分断された分割基板（第１実施形態で説明した分割基板４３０に相当）である発光装置が液晶を有する面と反対の側に配置して、直接液晶基板として用いることにより、低コストかつ薄型の液晶パネルを得ることができる。 In a normal LCD panel, the LCD drive substrate and the backlight are separated, and due to problems such as uneven light intensity and heat generation of the backlight, the use of a light guide tube and heat dissipation element increases the cost, and the LCD panel It was getting thicker. On the other hand, according to the liquid crystal panel 620 having the above-described configuration, since it is composed of a plurality of light emitting elements with respect to the amount of light obtained from one conventional light emitting element, there is no problem of unevenness in light amount or heat generation. No light tube or heat dissipation element is required. Therefore, a light emitting device which is a divided substrate (corresponding to the divided substrate 430 described in the first embodiment) divided into a large liquid crystal panel is arranged on the side opposite to the surface having liquid crystal and used directly as a liquid crystal substrate. A low-cost and thin liquid crystal panel can be obtained.
　このように、上記構成の液晶パネル６２０によれば、上記第１実施形態に係る発光素子を含む発光部分６２１と透明基板６２２からなる発光装置を用いることにより、歩留まりを向上できるとともに、接触抵抗低減による発光効率の高効率化・低消費電力化を実現できる。また、液晶パネル基板とバックライト基板を１つにした透明基板６２２を用いることにより、部品コストと製造コストを低減できると共に、より薄型の液晶パネルを実現することができる。 As described above, according to the liquid crystal panel 620 configured as described above, the use of the light emitting device including the light emitting portion 621 including the light emitting element according to the first embodiment and the transparent substrate 622 can improve the yield and reduce the contact resistance. High luminous efficiency and low power consumption can be realized. In addition, by using the transparent substrate 622 in which the liquid crystal panel substrate and the backlight substrate are combined, the component cost and the manufacturing cost can be reduced, and a thinner liquid crystal panel can be realized.
　なお、透明基板と、その透明基板の一方の面に配置され、透明基板の一方の面に形成された配線に接続された複数の発光素子と、上記透明基板の他方の面に形成されたカラーフィルタとを備えた液晶パネルにこの発明を適用してもよい。 A transparent substrate, a plurality of light emitting elements arranged on one surface of the transparent substrate and connected to wiring formed on one surface of the transparent substrate, and a color formed on the other surface of the transparent substrate The present invention may be applied to a liquid crystal panel provided with a filter.
　例えば、このような構成例の液晶パネル８２０を図３２に示している。図３２の側面図に示すように、放熱板の一例としての長方形状の透明基板８２２の一方の面に、配線された複数の発光素子(図示せず)が配置されている。これらの発光素子は、上記第１実施形態において説明した板状の発光素子である。また、透明基板８２２は図１７に示すガラス基板３０１に対応している。これらの配線された複数の板状の発光素子を含む発光部分８２１と、透明基板８２２で１つの大きな発光装置を形成している。また、透明基板８２２の他方の面に、カラーフィルタ８２３が形成され、カラーフィルタ８２３上に保護膜８２４が形成されている。そして、透明基板８２２の他方側に所定の間隔をあけてガラス基板８２７が配置され、ガラス基板８２７と透明基板８２２との間に液晶８２５を封止している。上記ガラス基板８２７の液晶８２５に対向する面に、図示しない画素電極とＴＦＴ８２６がマトリックス状に形成されている。 For example, FIG. 32 shows a liquid crystal panel 820 having such a configuration example. As shown in the side view of FIG. 32, a plurality of wired light emitting elements (not shown) are arranged on one surface of a rectangular transparent substrate 822 as an example of a heat sink. These light emitting elements are the plate-like light emitting elements described in the first embodiment. Further, the transparent substrate 822 corresponds to the glass substrate 301 shown in FIG. One light emitting device is formed by the light emitting portion 821 including the plurality of wired plate-like light emitting elements and the transparent substrate 822. A color filter 823 is formed on the other surface of the transparent substrate 822, and a protective film 824 is formed on the color filter 823. A glass substrate 827 is disposed on the other side of the transparent substrate 822 with a predetermined interval, and the liquid crystal 825 is sealed between the glass substrate 827 and the transparent substrate 822. Pixel electrodes and TFTs 826 (not shown) are formed in a matrix on the surface of the glass substrate 827 facing the liquid crystal 825.
　この液晶パネルでは、カラーフィルタとバックライト基板を１つにした透明基板を用いることにより、部品コストと製造コストを低減できると共に、より薄型の液晶パネルを実現することができる。 In this liquid crystal panel, by using a transparent substrate having a single color filter and backlight substrate, it is possible to reduce component costs and manufacturing costs, and to realize a thinner liquid crystal panel.
（第６実施形態）
　図３３、３４は本発明の第６実施形態を示している。この第６実施形態は、本発明に係る発光装置を表示装置の一例としての眼鏡型表示装置に適用したものである。図３４は第６実施形態の眼鏡型表示装置７００の外観形状を示す図である。図３４は眼鏡型表示装置７００の眼鏡レンズ７０１の一部を拡大した図である。 (Sixth embodiment)
33 and 34 show a sixth embodiment of the present invention. In the sixth embodiment, the light-emitting device according to the present invention is applied to a glasses-type display device as an example of a display device. FIG. 34 is a diagram showing the external shape of the eyeglass-type display device 700 of the sixth embodiment. FIG. 34 is an enlarged view of a part of the eyeglass lens 701 of the eyeglass-type display device 700.
　図３３に示すように、眼鏡型表示装置７００は、左右の眼鏡レンズ（透明基板）７０１と、左右のテンプル７０２と、レンズフレーム７０３とを備える。図３４に示すように、左右の眼鏡レンズ７０１の内側表面には、複数の微細で透明な発光素子７１１を有する発光装置が設けられている。この発光装置は、第１実施形態で説明した発光装置の構造を備えている。また、複数の発光素子７１１とそれぞれ対向した位置に、複数の微細なマイクロレンズ７２１が設けられている。眼鏡型表示装置７００はさらに、映像を表示するために複数の発光素子７１１の発光を制御するための制御回路（制御部）（図示せず）を備える。 33, the eyeglass-type display device 700 includes left and right eyeglass lenses (transparent substrates) 701, left and right temples 702, and a lens frame 703. As shown in FIG. 34, a light emitting device having a plurality of fine and transparent light emitting elements 711 is provided on the inner surfaces of the left and right eyeglass lenses 701. This light-emitting device has the structure of the light-emitting device described in the first embodiment. A plurality of fine microlenses 721 are provided at positions facing the plurality of light emitting elements 711 respectively. The glasses-type display device 700 further includes a control circuit (control unit) (not shown) for controlling the light emission of the plurality of light emitting elements 711 in order to display an image.
　すなわち、本実施形態における眼鏡型表示装置７００は、透明基板である眼鏡レンズ７０１と、眼鏡レンズ７０１に配置された複数の発光素子７１１と、複数の発光素子７１１の各々に対応して設けられた複数のマイクロレンズ７２１と、映像を表示するために複数の発光素子７１１の発光を制御するための制御回路を少なくとも備えている。 That is, the eyeglass-type display device 700 according to the present embodiment is provided corresponding to each of the eyeglass lens 701 that is a transparent substrate, the plurality of light emitting elements 711 disposed on the eyeglass lens 701, and the plurality of light emitting elements 711. A plurality of microlenses 721 and at least a control circuit for controlling light emission of the plurality of light emitting elements 711 for displaying an image are provided.
　本実施形態においては、発光素子７１１として、上記第１実施形態またはその代替例に係る板状の発光素子２００を用いている。したがって、接触抵抗を下げることによる発光効率の向上および消費電力の低減、ならびに歩留まりを向上できる。 In the present embodiment, as the light emitting element 711, the plate-like light emitting element 200 according to the first embodiment or an alternative example thereof is used. Accordingly, it is possible to improve the light emission efficiency, reduce the power consumption, and improve the yield by lowering the contact resistance.
　〔第７実施形態〕
　図３５～３７はこの発明の第７実施形態における表示装置の一例としてのＬＥＤディスプレイ６３０を示している。ここで、図３５はＬＥＤディスプレイ６３０の外観形状を示す図、図３６はＬＥＤディスプレイ６３０の概略構成を示すブロック図、図３７はＬＥＤディスプレイ６３０の一サブ画素の回路を示す回路図である。 [Seventh Embodiment]
35 to 37 show an LED display 630 as an example of a display device according to the seventh embodiment of the present invention. Here, FIG. 35 is a diagram showing an external shape of the LED display 630, FIG. 36 is a block diagram showing a schematic configuration of the LED display 630, and FIG. 37 is a circuit diagram showing a circuit of one subpixel of the LED display 630.
　図３６に示すように、ＬＥＤディスプレイ６３０は、記憶装置６３１、制御装置６３２、ソースドライバ６３３、ゲートドライバ６３４、及び表示部６３５を有する。記憶装置６３１は画像データやアドレス情報等を記憶する。 36, the LED display 630 includes a storage device 631, a control device 632, a source driver 633, a gate driver 634, and a display unit 635. The storage device 631 stores image data, address information, and the like.
　表示部６３５には、複数のソース線ＳＬと複数のゲート線がそれぞれ、互いに交差するように配列されており、ソース線ＳＬとゲート線ＧＬとによって囲まれた部分がサブ画素ＰＸとなる。つまり、表示部６３５には、複数のサブ画素ＰＸがマトリックス状に配列されている。そして、各サブ画素ＰＸはＲ（赤），Ｇ（緑），Ｂ（青）色のいずれか一つに対応しており、Ｒ（赤），Ｇ（緑），Ｂ（青）色のそれぞれに対応する３つのサブ画素ＰＸで１つの画素が構成される。なお、ＰＸを画素とした単色のＬＥＤディスプレイとしても良い。 In the display portion 635, a plurality of source lines SL and a plurality of gate lines are arranged so as to cross each other, and a portion surrounded by the source lines SL and the gate lines GL is a sub-pixel PX. That is, the display unit 635 has a plurality of sub-pixels PX arranged in a matrix. Each sub-pixel PX corresponds to one of R (red), G (green), and B (blue) colors, and each of R (red), G (green), and B (blue) colors. One pixel is composed of three sub-pixels PX corresponding to. A single color LED display using PX as a pixel may be used.
　各サブ画素ＰＸは図３７に示すように、ソースがソース線ＳＬに接続され、ゲートがゲート線ＧＬに接続されたトランジスタＴ１、ゲートがトランジスタＴ１のドレインに接続され、ソースが電源Ｖｓに接続されたトランジスタＴ２、一方の端子がトランジスタＴ１のソースに接続されたキャパシタＣ、及び、ゲートがトランジスタＴ２のドレインに接続された画素ＬＥＤ６３６を有する。 As shown in FIG. 37, each subpixel PX has a source connected to the source line SL, a gate connected to the gate line GL, a transistor T1, a gate connected to the drain of the transistor T1, and a source connected to the power supply Vs. Transistor T2, a capacitor C having one terminal connected to the source of transistor T1, and a pixel LED 636 having a gate connected to the drain of transistor T2.
　このＬＥＤディスプレイ６３０は、アクティブマトリックスアドレス方式であり、記憶装置６３１から読み出された画像データ及びアドレス情報に基づき、上記制御装置６３２の制御の下、ソースドライバ６３３により選択電圧パルスがゲート線ＧＬに供給され、ゲートドライバ６３４によりデータ信号がソース線ＳＬに送られる。上記選択電圧パルスがトランジスタＴ１のゲートに入力されて、トランジスタＴ１がオンすると、上記データ信号は、トランジスタＴ１のソースからドレインに伝達され、データ信号はキャパシタＣに電圧として記憶される。トランジスタＴ２は画素ＬＥＤ６３６の駆動用であり、この画素ＬＥＤ６３６として、第１実施形態またはその変形例に係る板状の発光素子が用いられる。 The LED display 630 is an active matrix address system, and a selection voltage pulse is applied to the gate line GL by the source driver 633 under the control of the control device 632 based on the image data and address information read from the storage device 631. The data signal is supplied to the source line SL by the gate driver 634. When the selection voltage pulse is input to the gate of the transistor T1 and the transistor T1 is turned on, the data signal is transmitted from the source to the drain of the transistor T1, and the data signal is stored as a voltage in the capacitor C. The transistor T2 is for driving the pixel LED 636. As the pixel LED 636, a plate-like light emitting element according to the first embodiment or a modification thereof is used.
　上記画素ＬＥＤ６３６は上記トランジスタＴ２を経て電源Ｖｓに接続されている。よって、トランジスタＴ１からのデータ信号でトランジスタＴ２がオンすることにより、画素ＬＥＤ６３６は上記電源Ｖｓによって駆動される。 The pixel LED 636 is connected to the power source Vs through the transistor T2. Therefore, when the transistor T2 is turned on by the data signal from the transistor T1, the pixel LED 636 is driven by the power source Vs.
　上述の通りマトリックス状に配列された複数のサブ画素ＰＸの画素ＬＥＤ６３６とトランジスタＴ１,Ｔ２は基板上に形成されている。 As described above, the pixel LEDs 636 and the transistors T1 and T2 of the plurality of sub-pixels PX arranged in a matrix are formed on the substrate.
　この実施形態のＬＥＤディスプレイ６３６は、例えば、以下の方法で製造することができる。 The LED display 636 of this embodiment can be manufactured by the following method, for example.
　まず、前述の第１実施形態で図７～図１４を参照して説明した方法で複数の板状の発光素子２００Ａを形成する。次に、画素ＬＥＤ６３６となるこれらの板状の発光素子２００Ａを配置するための電極３１０，３２０（図１５参照）並びにソース線ＳＬ及びゲート線ＧＬが形成されたガラス等の基板（図１６のガラス基板３０１に相当）上に、トランジスタＴ１、Ｔ２を通常のＴＦＴ形成方法を用いて形成する。次に、前述の第１実施形態で図１５～図１９を参照して説明したように、上記基板上の所定の位置に複数の板状の発光素子２００Ａを配置した後、発光素子２００Ａの半導体コア２０１を露出させて、露出部分２０５を有する発光素子２００とし、さらに、第１配線３４０及び第２配線３５０（図１７～１９参照）を形成して、これらの板状の発光素子２００を画素ＬＥＤ６３６としてそれぞれの対応するトランジスタＴ２のドレインとアース線とに接続する。最後に、各トランジスタＴ２のドレインとアース線とに接続された複数の板状の発光素子２００即ち画素ＬＥＤ６３６が配置された基板（図２０の面発光基板４００に相当）を所望のサイズに分割して分割基板（図２０の分割基板４３０に相当）とし、この分割基板を用いてＬＥＤディスプレイ６３０が製造される。 First, a plurality of plate-like light emitting elements 200A are formed by the method described with reference to FIGS. 7 to 14 in the first embodiment. Next, a substrate such as glass on which electrodes 310 and 320 (see FIG. 15) and source lines SL and gate lines GL for disposing these plate-like light emitting elements 200A to be the pixel LEDs 636 are formed (the glass in FIG. 16). Transistors T1 and T2 are formed on the substrate 301) using a normal TFT forming method. Next, as described with reference to FIGS. 15 to 19 in the first embodiment, after a plurality of plate-like light emitting elements 200A are arranged at predetermined positions on the substrate, the semiconductor of the light emitting element 200A is arranged. The core 201 is exposed to form a light emitting element 200 having an exposed portion 205, and further, a first wiring 340 and a second wiring 350 (see FIGS. 17 to 19) are formed, and these plate-like light emitting elements 200 are formed as pixels. The LED 636 is connected to the drain of each corresponding transistor T2 and the ground line. Finally, a substrate (corresponding to the surface light emitting substrate 400 in FIG. 20) on which a plurality of plate-like light emitting elements 200, that is, the pixel LEDs 636 connected to the drain and the ground line of each transistor T2 is divided into a desired size. The divided substrate (corresponding to the divided substrate 430 in FIG. 20) is used, and the LED display 630 is manufactured using the divided substrate.
　このＬＥＤディスプレイ６３０は、発光素子自体を画像表示のための画素ＬＥＤとして使用するものであるので、液晶表示装置などとは異なり、バックライトが不要である。したがって、部品コストと製造コストを低減できる。 Since the LED display 630 uses the light emitting element itself as a pixel LED for image display, a backlight is not required unlike a liquid crystal display device or the like. Therefore, component cost and manufacturing cost can be reduced.
　本実施形態においては、画素ＬＥＤ６３６として、上記第１実施形態またはその代替例に係る板状の発光素子２００を用いている。したがって、前述の他の実施形態と同様に、接触抵抗を下げることによる発光効率の向上および消費電力の低減、ならびに歩留まりを向上できる。 In the present embodiment, as the pixel LED 636, the plate-like light emitting element 200 according to the first embodiment or an alternative example thereof is used. Therefore, as in the other embodiments described above, it is possible to improve luminous efficiency, reduce power consumption, and improve yield by reducing contact resistance.
　なお、図３５に示したＬＥＤディスプレイ６３０の外観形状は単なる一例であり、ＬＥＤディスプレイ６３０の外観形状は如何なるものであってもよい。また、この実施の形態のＬＥＤディスプレイの駆動方式はアクティブマトリックス方式であるが、パッシブ方式としてもよい。 Note that the appearance of the LED display 630 shown in FIG. 35 is merely an example, and the appearance of the LED display 630 may be any shape. Moreover, although the drive system of the LED display of this embodiment is an active matrix system, it may be a passive system.
　〔第８実施形態〕
　図３8は、この発明の第８実施形態における表示装置の一例としてのシースルー型（透明）ＬＥＤディスプレイ６４０の外観図である。このシースルー型ＬＥＤディスプレイ６４０は、表示部６４２がシースルーつまり透明である点において、第７実施形態のＬＥＤディスプレイ６３０と異なる。表示部を取り囲むフレーム６４１は不透明としているが、透明であってもよい。 [Eighth Embodiment]
FIG. 38 is an external view of a see-through (transparent) LED display 640 as an example of a display device according to the eighth embodiment of the present invention. This see-through type LED display 640 is different from the LED display 630 of the seventh embodiment in that the display unit 642 is see-through, that is, transparent. Although the frame 641 surrounding the display unit is opaque, it may be transparent.
　表示部６４２の高い透明性を確保するために、表示部６４２を構成する構成部材の全てを透明な材料で形成するのが理想であるが、それが難しい場合には、少なくとも、表示部６４２を構成する基板、及び基板に形成されるソース線及びゲート線、画素ＬＥＤつまり板状の発光素子を覆う保護膜（図１７の３３０参照）を透明な材料で形成すればよい。 In order to ensure high transparency of the display portion 642, it is ideal that all of the constituent members constituting the display portion 642 are formed of a transparent material. However, if this is difficult, at least the display portion 642 is provided. A protective film (see 330 in FIG. 17) that covers the substrate to be formed, the source line and the gate line formed on the substrate, the pixel LED, that is, the plate-like light emitting element, may be formed using a transparent material.
　シースルー型ＬＥＤディスプレイ６４０が画像を表示していないとき、背部にある物体が表示部６４２を介して透けて見える。また、画像を表示しているときでも、画像部分以外は透明なままとなる。 When the see-through LED display 640 is not displaying an image, an object on the back can be seen through the display unit 642. Even when an image is displayed, the portions other than the image portion remain transparent.
　第７実施形態と同様、この第８実施形態においても、発光素子自体を画像表示のための画素ＬＥＤとして使用するものであるので、液晶表示装置などとは異なり、バックライトが不要である。したがって、部品コストと製造コストを低減できる。また、上記第１実施形態またはその代替例に係る板状の発光素子を画素ＬＥＤとして用いているので、接触抵抗を下げることによる発光効率の向上および消費電力の低減、ならびに歩留まりを向上できる。 As in the seventh embodiment, in the eighth embodiment, the light emitting element itself is used as a pixel LED for image display, and therefore, unlike a liquid crystal display device, a backlight is unnecessary. Therefore, component cost and manufacturing cost can be reduced. In addition, since the plate-like light emitting element according to the first embodiment or its alternative is used as the pixel LED, it is possible to improve the light emission efficiency, reduce the power consumption, and improve the yield by reducing the contact resistance.
　なお、図３８に示したシースルー型ＬＥＤディスプレイ６４０の外観形状は単なる一例であり、その外観形状は如何なるものであってもよい。 The appearance shape of the see-through LED display 640 shown in FIG. 38 is merely an example, and the appearance shape may be any.
　上記第５実施形態～第８実施形態において幾つかのタイプの表示装置を説明したが、これらはほんの一例であり、他のタイプの表示装置にも本発明は適用出来る。例えば、時計型の表示装置、携帯端末のための表示装置にも適用可能である。 Although several types of display devices have been described in the fifth to eighth embodiments, these are only examples, and the present invention can be applied to other types of display devices. For example, the present invention can be applied to a clock-type display device and a display device for a portable terminal.
　以上、本発明を図示した種々の実施形態について説明したが、ここに記載した半導体材料、基板材料、各種寸法、各種形状、製造方法は単に例示であって、発明を限定するものではない。 As mentioned above, although various embodiment which illustrated this invention was demonstrated, the semiconductor material, board | substrate material, various dimensions, various shapes, and manufacturing method which were described here are only illustrations, Comprising: Invention is not limited.
　２００　発光素子
　２００Ａ　発光素子（露出部分２０５形成前のもの）
　２０１　ｎ型の半導体コア
　２０２　活性層（発光層）
　２０３　ｐ型の半導体層
　２０４　透明導電膜（導電層）
　２０５　露出部分
　２０１１、２０１２　半導体コア２０１の２つの端部　
　２０１３　半導体コア２０１の外周面
　２０１３ａ、２０１３ｂ　外周面２０１３を構成する側面
　２０１Ａ　ｎ型ＧａＮ膜
２０１Ｂ　板状のｎ型ＧａＮ膜
２１０　サファイア基板
２２０　マスク
３０１　ガラス基板
３１０、３２１　配置用の電極
３１１　電極３１０の一部である連結電極
３１２　電極３１０の一部である駆動電極
３１２Ｂ　駆動電極３１２の一部である凸部
３２１　電極３２０の一部である連結電極
３２２　電極３２０の一部である駆動電極
３２２Ｂ　駆動電極３２２の一部である凸部
３３０　保護膜
３３１、３３２　コンタクトホール
３４０、３５０　配線
３４１、３５１　配線３４０、３５０の一部であるコンタクトメタル
４００　面発光基板（発光装置）
４３０Ａ～４３０Ｅ　分割基板（発光装置）
５００　発光装置
５０１　放熱板
５０２　絶縁性基板
５１０　ＬＥＤ電球
５１１　口金
５１２　放熱部
５１３　透光部
６００、６１０　バックライト
６０１、６１１　支持基板
６０２、６１２　発光装置
６２０　液晶パネル
６２１　発光部分
６２２　透明基板
６２３　液晶
６２４　液晶封止板
６３０　ＬＥＤディスプレイ
６３１　記憶装置
６３２　制御装置
６３３　ソースドライバ
６３４　ゲートドライバ
６３５　表示部
６３６　発光素子６４０　シースルー型ＬＥＤディスプレイ
６４１　フレーム
６４２　表示部
８２０　液晶パネル
８２１　発光部分
８２２　透明基板
８２３　カラーフィルタ
８２４　保護膜
８２５　液晶
８２６　ＴＦＴ
８２７　ガラス基板
７００　眼鏡型表示装置
７０１　眼鏡レンズ
７０２　テンプル
７０３　レンズフレーム
７１１　発光素子
７２１　マイクロレンズ
ＰＸ　画素
ＧＬ　ゲート線
ＳＬ　ソース線
Ｔ１，Ｔ２　トランジスタ
Ｃ　キャパシタ
Ｖｓ　電源 200 light emitting element 200A light emitting element (before the exposed portion 205 is formed)
201 n-type semiconductor core 202 active layer (light emitting layer)
203 p-type semiconductor layer 204 transparent conductive film (conductive layer)
205 Exposed portions 2011, 2012 Two ends of the semiconductor core 201
2013 Outer peripheral surface of semiconductor core 201 2013a, 2013b Side surface constituting outer peripheral surface 2013 201A n-type GaN film 201B Plate-shaped n-type GaN film 210 Sapphire substrate 220 Mask 301 Glass substrate 310, 321 Disposition electrode 311 One of electrodes 310 Connecting electrode 312 which is a part Driving electrode 312B which is a part of electrode 310 Convex part 321 which is a part of driving electrode 312 Connecting electrode 322 which is a part of electrode 320 Driving electrode 322B which is a part of electrode 320 Driving electrode 322 340, 350 Contact hole 340, 350 Wiring 341, 351 Contact metal 400, part of wiring 340, 350 Surface emitting substrate (light emitting device)
430A to 430E Divided substrate (light emitting device)
500 Light-Emitting Device 501 Heat-Dissipating Plate 502 Insulating Substrate 510 LED Bulb 511 Base 512 Heat-Dissipating Unit 513 Light-Transmitting Units 600 and 610 Backlights 601 and 611 Support Substrate 602 and 612 Light-Emitting Device 620 Liquid Crystal Panel 621 Light-Emitting Portion 622 Transparent Substrate 623 Liquid Crystal 624 Liquid Crystal Sealing plate 630 LED display 631 Storage device 632 Control device 633 Source driver 634 Gate driver 635 Display unit 636 Light-emitting element 640 See-through LED display 641 Frame 642 Display unit 820 Liquid crystal panel 821 Light-emitting portion 822 Transparent substrate 823 Color filter 824 Protective film 825 Liquid crystal 826 TFT
827 Glass substrate 700 Eyeglass-type display device 701 Eyeglass lens 702 Temple 703 Lens frame 711 Light emitting element 721 Microlens PX Pixel GL Gate line SL Source line T1, T2 Transistor C Capacitor Vs Power supply

Claims (9)

  1. 　第１の方向において対向する２つの端部とこれら端部の間の２以上の側面からなる外周面を有する第１導電型の半導体コアと、上記半導体コアの上記外周面の回りに配置された第２導電型の半導体層とを少なくとも備えて、上記半導体コアと上記半導体層との間で発光するようになっており、上記半導体コアの側面の少なくとも１つは側面全体が上記半導体層で覆われ、別の側面は上記半導体層によって覆われずに露出している露出部分を有する発光素子であって、
    　上記第１の方向と直交する上記半導体コアの横断面は、第２の方向の長さＬ１と、上記第２の方向と直交する第３の方向の長さＬ２とを有し、長さＬ１は、２×Ｌ２≦Ｌ１≦１０００×Ｌ２の範囲にあり、
    　上記半導体コアの露出部分は、上記第２の方向の長さＬ３と上記第１の方向の長さＬ４とを有し、上記長さＬ３は上記半導体コアの横断面の第２の方向の長さＬ１の６０％～１００％の長さであることを特徴とする発光素子。     A first-conductivity-type semiconductor core having an outer peripheral surface composed of two end portions facing each other in the first direction and two or more side surfaces between the end portions; and disposed around the outer peripheral surface of the semiconductor core. A semiconductor layer of at least a second conductivity type, and emits light between the semiconductor core and the semiconductor layer. At least one of the side surfaces of the semiconductor core is covered with the semiconductor layer. Another side surface is a light emitting device having an exposed portion that is exposed without being covered by the semiconductor layer,
    The cross section of the semiconductor core orthogonal to the first direction has a length L1 in the second direction and a length L2 in the third direction orthogonal to the second direction. Is in the range of 2 × L2 ≦ L1 ≦ 1000 × L2,
    The exposed portion of the semiconductor core has a length L3 in the second direction and a length L4 in the first direction, and the length L3 is a length in the second direction of the cross section of the semiconductor core. A light emitting element having a length of 60% to 100% of L1.
  2. 　請求項１に記載の発光素子において、
    　上記半導体コアは、上記横断面が多角形状または楕円形状である板状コアであることを特徴とする発光素子。     The light emitting device according to claim 1,
    The light-emitting element, wherein the semiconductor core is a plate-like core having a polygonal or elliptical cross section.
  3. 　請求項１または２に記載の発光素子において、
    　上記半導体コアは上記第１の方向の長さＬ５を有し、Ｌ５≧Ｌ１であることを特徴とする発光素子。     The light emitting device according to claim 1 or 2,
    The light emitting element, wherein the semiconductor core has a length L5 in the first direction, and L5 ≧ L1.
  4. 　請求項１～３のいずれか１つに記載の発光素子において、
    　上記半導体コアの横断面の上記第３の方向の長さＬ２および上記第２の方向の長さＬ１はそれぞれ、１００ｎｍ～２０μｍおよび３００ｎｍ～５００μｍの範囲内にあることを特徴とする発光素子。     The light emitting device according to any one of claims 1 to 3,
    The light emitting element, wherein a length L2 in the third direction and a length L1 in the second direction of the cross section of the semiconductor core are in a range of 100 nm to 20 μm and 300 nm to 500 μm, respectively.
  5. 　請求項４に記載の発光素子において、
    　上記露出部の上記第２方向の長さＬ３および上記第１方向の長さＬ４はそれぞれ、３００ｎｍ～５００μｍおよび３００ｎｍ～５００μｍの範囲内にあることを特徴とする発光素子。     The light emitting device according to claim 4.
    The light emitting element, wherein the length L3 in the second direction and the length L4 in the first direction of the exposed portion are in the range of 300 nm to 500 μm and 300 nm to 500 μm, respectively.
  6. 　基板と、
    　上記基板上に載置された複数の発光素子と、
    　上記発光素子に電気的に接続されている配線と
    を備え、
    　上記発光素子は、請求項１～５のいずれか１つに記載の発光素子であって、上記第２導電型の半導体層を覆う導電膜をさらに備え、
    　上記配線は、上記発光素子の半導体コアの露出部分に接触するコンタクトメタルを有する第１の配線及び上記導電膜に接触するコンタクトメタルを有する第２の配線を含んでいることを特徴とする発光装置。     A substrate,
    A plurality of light-emitting elements mounted on the substrate;
    A wiring electrically connected to the light emitting element,
    The light emitting device according to any one of claims 1 to 5, further comprising a conductive film covering the semiconductor layer of the second conductivity type,
    The wiring includes a first wiring having a contact metal in contact with an exposed portion of a semiconductor core of the light emitting element and a second wiring having a contact metal in contact with the conductive film. .
  7. 　請求項６に記載の発光装置を備えたことを特徴とする照明装置。 An illumination device comprising the light-emitting device according to claim 6.
  8. 　請求項６に記載の発光装置を備えたことを特徴とするバックライト。 A backlight comprising the light-emitting device according to claim 6.
  9. 　請求項６に記載の発光装置を備えたことを特徴とする表示装置。 A display device comprising the light-emitting device according to claim 6.
PCT/JP2017/016569 2016-07-11 2017-04-26 Light emitting element, light emitting device, lighting device, backlight and display device WO2018012086A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016136934A JP2019149389A (en) 2016-07-11 2016-07-11 Light emitting element, light emitting device, illumination device, backlight, and display device
JP2016-136934 2016-07-11

Publications (1)

Publication Number Publication Date
WO2018012086A1 true WO2018012086A1 (en) 2018-01-18

Family

ID=60952488

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2017/016569 WO2018012086A1 (en) 2016-07-11 2017-04-26 Light emitting element, light emitting device, lighting device, backlight and display device

Country Status (2)

Country Link
JP (1) JP2019149389A (en)
WO (1) WO2018012086A1 (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060273328A1 (en) * 2005-06-02 2006-12-07 Nanosys, Inc. Light emitting nanowires for macroelectronics
WO2007144944A1 (en) * 2006-06-14 2007-12-21 Kyosemi Corporation Rod-type semiconductor device
US20110254043A1 (en) * 2009-10-19 2011-10-20 Sharp Kabushiki Kaisha Rod-like light-emitting device, method of manufacturing rod-like light-emitting device, backlight, illuminating device, and display device
WO2012029381A1 (en) * 2010-09-01 2012-03-08 シャープ株式会社 Light emitting element and production method for same, production method for light-emitting device, illumination device, backlight, display device, and diode
JP2015126048A (en) * 2013-12-26 2015-07-06 シャープ株式会社 Light-emitting element, method of manufacturing light-emitting element, light-emitting device comprising plurality of light-emitting elements, and method of manufacturing light-emitting device
WO2016084672A1 (en) * 2014-11-26 2016-06-02 シャープ株式会社 Display device and production method for display device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060273328A1 (en) * 2005-06-02 2006-12-07 Nanosys, Inc. Light emitting nanowires for macroelectronics
WO2007144944A1 (en) * 2006-06-14 2007-12-21 Kyosemi Corporation Rod-type semiconductor device
US20110254043A1 (en) * 2009-10-19 2011-10-20 Sharp Kabushiki Kaisha Rod-like light-emitting device, method of manufacturing rod-like light-emitting device, backlight, illuminating device, and display device
WO2012029381A1 (en) * 2010-09-01 2012-03-08 シャープ株式会社 Light emitting element and production method for same, production method for light-emitting device, illumination device, backlight, display device, and diode
JP2015126048A (en) * 2013-12-26 2015-07-06 シャープ株式会社 Light-emitting element, method of manufacturing light-emitting element, light-emitting device comprising plurality of light-emitting elements, and method of manufacturing light-emitting device
WO2016084672A1 (en) * 2014-11-26 2016-06-02 シャープ株式会社 Display device and production method for display device

Also Published As

Publication number Publication date
JP2019149389A (en) 2019-09-05

Similar Documents

Publication Publication Date Title
US11114499B2 (en) Display device having light emitting stacked structure
US10886327B2 (en) Light emitting stacked structure and display device having the same
US11522006B2 (en) Light emitting stacked structure and display device having the same
US10096647B2 (en) Display apparatus having a plurality of reflective electrodes
EP3228157B1 (en) Display device using semiconductor light emitting device and method for manufacturing thereof
US20170242161A1 (en) Display panels with integrated micro lens array
EP3091578B1 (en) Transparent oled device and display device employing same
BR112020010653A2 (en) LED light for display and display device having the same
CN109656050B (en) Liquid crystal display device and method of manufacturing the same
US7315076B2 (en) Display device and manufacturing method of the same
US11742472B2 (en) Unit pixel having light emitting device, pixel module and displaying apparatus
KR102555828B1 (en) High resolution micro led display device and the manufacturing method of the same
CN107229158A (en) Liquid crystal display device
KR20220043993A (en) Display device and method of fabricating the same
US20230045618A1 (en) Display device
WO2018012086A1 (en) Light emitting element, light emitting device, lighting device, backlight and display device
US11942574B2 (en) Display device and method of manufacturing the same
KR20160001857A (en) Light emitting diode package and light emitting diode display device
KR101802778B1 (en) Organic light emitting display device
EP4024466A1 (en) Electronic device substrate and method for manufacture and electronic device thereof
WO2016163231A1 (en) Spectacle type display device
US20230155063A1 (en) Display device
US20210050479A1 (en) Micro light emitting diode and micro light emitting diode device substrate
KR102273876B1 (en) Fabricating method for thin film transistor array substrate
KR20230111697A (en) Manufacturing method for display device, panel for manufacturing display device and display device

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17827220

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

NENP Non-entry into the national phase

Ref country code: JP

122 Ep: pct application non-entry in european phase

Ref document number: 17827220

Country of ref document: EP

Kind code of ref document: A1