WO2018010227A1 - 一种具有曝光补正的光罩 - Google Patents

一种具有曝光补正的光罩 Download PDF

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Publication number
WO2018010227A1
WO2018010227A1 PCT/CN2016/093068 CN2016093068W WO2018010227A1 WO 2018010227 A1 WO2018010227 A1 WO 2018010227A1 CN 2016093068 W CN2016093068 W CN 2016093068W WO 2018010227 A1 WO2018010227 A1 WO 2018010227A1
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WIPO (PCT)
Prior art keywords
region
exposure
sub
correction
area
Prior art date
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Ceased
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PCT/CN2016/093068
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English (en)
French (fr)
Inventor
张春倩
陈彩琴
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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Priority to US15/312,073 priority Critical patent/US20180180988A1/en
Publication of WO2018010227A1 publication Critical patent/WO2018010227A1/zh
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303—Apparatus specially adapted to the manufacture of LCDs

Definitions

  • the present invention relates to the field of liquid crystal display technology, and in particular to a photomask having exposure correction.
  • liquid crystal displays have been widely used in electronic display products such as televisions, computer screens, notebook computers, mobile phones, and the like.
  • the electric field is laterally distributed, so that it is more necessary to ensure the exposure accuracy of the pixel electrode, thereby obtaining a uniform electric field and uniformly deflecting the liquid crystal.
  • the design pattern cannot be completely reproduced due to the limitation of the exposure precision, assuming that if it is an acute angle, the light obtained after the exposure and etching process is obtained.
  • the pattern on the cover will be rounded. If such a mask is used, the electric field will be uneven, which will affect the deflection of the liquid crystal and form a dark band, which will affect the quality of the product and affect the display effect of the display.
  • the present invention provides a reticle with exposure correction.
  • the present invention provides a photomask having exposure correction, comprising a light-shielding region and an exposure region surrounded by the light-shielding region, wherein
  • the exposure area includes a correction sub-area and an exposure sub-area
  • the correction sub-region is disposed around an acute angle vertex of the exposure sub-region; the correction sub-region is in communication with the exposure sub-region; and when the correction sub-region is a circular region, the diameter of the circular region is smaller than
  • the exposure accuracy of the exposure machine is minimal; the long axis direction of the elliptical region is parallel to the center line of the acute angle and the short axis length of the exposure ellipse is less than the exposure minimum precision of the exposure machine.
  • the present invention provides a photomask having exposure correction, comprising a light-shielding region and an exposure region surrounded by a light-shielding region, the exposure region including a correction sub-region and an exposure sub-region, wherein the correction sub-region is disposed in the exposure sub-region Sharp corners around the apex.
  • the acute angle in the exposed area may become rounded shape after exposure etching, which may cause uneven electric field, affecting liquid crystal deflection in the panel, and thus by correcting the sub-positor
  • the area is set around the acute angle apex of the exposure sub-area, and because the size of the acute angle is smaller than the exposure minimum precision of the exposure machine and the width of the correction sub-area is smaller than the exposure minimum precision of the exposure machine, the exposure pattern that does not affect, that is, when The light is diffracted by correcting the sub-region, and mutually enhances the light irradiated to the photoresist through the acute angle, thereby increasing the exposure intensity around the apex of the acute angle, thereby increasing the exposure capability, and obtaining the desired pattern after exposure etching, thereby making the electric field Uniform distribution, improve the quality of LCD production, and thus enhance the display of the display.
  • the correction sub-region is in communication with the exposure sub-region. This is the specific location of the correction sub-area.
  • the correction sub-region includes, but is not limited to, a circular-like region.
  • the correction sub-region is a circular region
  • the diameter of the circular region is smaller than the exposure minimum precision of the exposure machine.
  • the correction sub-region is an elliptical region
  • a long-axis direction of the elliptical region is parallel to a center line of the acute angle and a short axis length of the exposure ellipsoid Less than the exposure accuracy of the exposure machine.
  • the correction sub-region and the exposure sub-region are separated by the light-shielding region. This is another specific location for the complement sub-region.
  • the correction sub-region includes, but is not limited to, one of a circular-like region, an annular region, and a polygonal region.
  • the correction sub-region is a circular region
  • the diameter of the circular region is smaller than the exposure minimum precision of the exposure machine.
  • the width of the annular region is smaller than the exposure minimum precision of the exposure machine.
  • the width of the polygonal line region is smaller than the exposure minimum precision of the exposure machine.
  • the present invention also provides a photomask having exposure correction, comprising a light shielding region and an exposure region surrounded by the light shielding region, wherein
  • the exposure area includes a correction sub-area and an exposure sub-area
  • the correction sub-region is disposed around an acute apex of the exposure sub-region; the light-shielding region includes a body and an extension extending outward from the body.
  • the reticle of the exposure sub-region provided by the invention provides at least one correction sub-region around the acute-angle apex of the exposure sub-region, and the correction sub-region replaces the original acute-angle sub-vertex portion or the correction sub-region.
  • the exposure pattern that does not affect that is, by increasing the exposure area, when the light passes through the correction sub-region, diffracts, and the light that is irradiated onto the photoresist through the acute angle enhances each other, thereby increasing the exposure intensity around the apex of the acute angle, thereby increasing
  • the exposure capability is obtained by exposure etching to obtain a desired pattern, thereby making the electric field distribution uniform, improving the quality of the liquid crystal product, and thereby improving the display effect of the display.
  • FIG. 1 is a schematic structural view showing a correction sub-region in a circular region in the first embodiment of the reticle of the present invention
  • FIG. 2 is a schematic structural view showing a correction sub-region in an elliptical region in the second embodiment of the reticle of the present invention
  • FIG. 3 is a schematic structural view showing a correction sub-region in a circular region in the third embodiment of the reticle of the present invention.
  • FIG. 4 is a schematic structural view showing a correction sub-region as an annular region in Embodiment 4 of the reticle of the present invention.
  • FIG. 5 is a schematic structural view of a correction sub-region in a fifth embodiment of the reticle in the present invention.
  • FIG. 6 is a schematic view showing the structure in which the correction sub-region is a broken line region and the fold line region is gradually narrowed from the intersection of the fold line regions at both ends according to the fifth embodiment of the reticle of the present invention.
  • FIG. 1 illustrates a photomask 1 having an exposure correction function according to a preferred embodiment of the present invention.
  • the reticle 1 includes a light shielding region 11 and an exposure region 12.
  • the exposed area 12 is surrounded by the light blocking area 11.
  • the shaded portion is the light-shielding region 11, and the blank portion is the exposed region 12.
  • the light shielding region 11 includes a body 111 and an extending portion 112 extending outward from the body 111.
  • the body 111 is rectangular.
  • the body 111 includes a bottom edge 1111. It can be understood that the shape of the body 111 in other embodiments can be adaptively adjusted according to actual needs, such as a square, a polygon, and the like.
  • the extending portion 112 extends obliquely outward from the bottom edge 1111 of the body 111.
  • the extension portion 112 has a substantially U-line configuration.
  • the front end of the extending portion 112 is connected to the bottom edge 1111 of the body 111 to form the exposed area 20. It can be understood that in other embodiments, the shape and the number of the extending portion 112 are adaptively adjusted according to actual needs, and only the exposed region 12 can be formed by being coupled to the body 111.
  • the exposure area 12 includes an exposure sub-area 122 and a correction sub-area 121.
  • the exposure sub-region 122 is substantially diamond-shaped. That is, the exposed portion 12 formed by the extending portion 112 and the body 111 is substantially rhombic.
  • the exposed region 12 is located at a critical position where the extension portion 112 is connected to the body 111 to form at least one acute-angle apex region.
  • the correction sub-region 121 is formed to be formed at the acute-angle apex region. That is, the correction sub-region 121 is disposed around the acute apex of the exposure sub-region 122.
  • the correction sub-region 121 is in communication with the exposure sub-region 122.
  • the correction sub-region includes, but is not limited to, a circular-like region.
  • the correction sub-region 121 is a circular region, and the diameter of the circular region 121 is smaller than the exposure minimum precision of the exposure machine.
  • FIG. 2 is a photomask 2 with an exposure correction function according to a second embodiment of the present invention.
  • the reticle 2 includes a light shielding region 21 and an exposure region 22.
  • the exposed area 22 is surrounded by the light blocking area 21.
  • the shaded portion is the light-shielding region 21, and the blank portion is the exposure region 22.
  • the exposure area 22 includes an exposure sub-area 222 and a correction sub-area 221 .
  • the basic structure of the reticle is the same as that in the first embodiment, and is not described in detail here.
  • the correction sub-region 221 is an elliptical region, and the minor axis length of the elliptical region 221 is smaller than
  • the exposure accuracy of the exposure machine is minimal, and in order to achieve a more corrective effect, the acute angle pattern is better restored, and the long axis of the elliptical region 221 is parallel to the diagonal of the acute vertex region.
  • the relevant shape design of the correction sub-region can be realized as long as the exposure area of the acute-angle apex region of the exposure region can be increased, and the specific position and size can be calculated by other conditions such as an exposure machine.
  • FIG. 3 is a photomask 3 with an exposure correction function according to a third embodiment of the present invention.
  • the reticle 3 includes a light shielding region 31 and an exposure region 32.
  • the exposed area 32 is surrounded by the light blocking area 31.
  • the shaded portion is the light-shielding region 31, and the blank portion is the exposure region 32.
  • the exposure area 32 includes an exposure sub-area 322 and a correction sub-area 321 .
  • the structure of the reticle 3 is substantially the same as that of the reticle 1 described above.
  • the correction sub-region 321 is disposed around the acute vertex of the exposure sub-region 322 and is spaced apart from the exposure sub-region 322, that is, the correction sub-region 321 and the exposure sub-region 322 pass through the shading region. Interspersed. Specifically, the correction sub-region 321 is correspondingly disposed on the body of the light-shielding region.
  • the correction sub-region includes, but is not limited to, one of a circular-like region, a circular region, and a polygonal region.
  • the correction sub-region 321 is a circular region.
  • the diameter of the circular area 321 is less than the exposure accuracy of the exposure machine.
  • the center of the circular area 321 is on the extension of the diagonal of the acute angle.
  • FIG. 4 is a photomask 4 with an exposure correction function according to a fourth embodiment of the present invention.
  • the reticle 4 includes a light shielding region 41 and an exposure region 42.
  • the exposed area 42 is surrounded by the light blocking area 41.
  • the shaded portion is the light-shielding region 41, and the blank portion is the exposure region 42.
  • the exposure area 42 includes an exposure sub-area 422 and a correction sub-area 421.
  • the correction sub-region 421 is an annular region, the width of the annular region 421 is smaller than the exposure minimum precision of the exposure machine, and preferably, the center of the annular region 421 is on the extension of the diagonal of the acute angle.
  • the annular region 421 When the light passes through the annular region 421, diffraction occurs, and the light that is irradiated onto the photoresist through the acute angle portion is mutually enhanced, and the exposure intensity at the acute angle is increased, thereby increasing the exposure capability and thereby increasing the exposure precision, thereby making it possible to Good to restore the sharp angle pattern. That is to say, it is possible to better avoid the fact that the original acute angle is formed by the rounded shape after exposure and etching due to the limitation of the exposure precision, resulting in an uneven electric field.
  • the annular region has a certain distance from the acute apex, which is set by the exposure machine according to the wavelength of the light, the position of the light source, etc., and can be understood and calculated by those skilled in the art.
  • the reticle 5 includes a light shielding region 51 and an exposure region 52.
  • the exposed area 52 is surrounded by the light blocking area 51.
  • the shaded portion is the light-shielding region 51, and the blank portion is the exposure region 52.
  • the exposure area 52 includes an exposure sub-area 522 and a correction sub-area 521.
  • the correction sub-area is the fold line area 521, specifically, the fold line area 521 includes a first flap 5211 and a second flap 5212, and one end of the first flap 521 is connected with one end of the second flap 5212.
  • the width of the first flap 5211 of the fold line region is uniform and consistent with the width of the second flap 5212.
  • the width of the fold line region 521 is smaller than the exposure minimum precision of the exposure machine.
  • the bending point of the fold line region is on the extension line of the diagonal of the acute angle.
  • the width of the fold line region 523 in FIG. 6 may also be gradual. Specifically, the width of the first flap 5231 and the width 5232 of the second flap are respectively crossed. The dots are gradually narrowed along the two ends, and the maximum width of the fold line region is smaller than the exposure minimum precision of the exposure machine.
  • the reticle of the exposure sub-region provided by the invention provides at least one correction sub-region around the acute-angle apex of the exposure sub-region, and the correction sub-region replaces the original acute-angle sub-vertex portion or the correction sub-region.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

一种具有曝光补正的光罩（1,2,3,4,5），包括遮光区域（11,21,31,41,51）和被遮光区域（11,21,31,41,51）包围的曝光区域（12,22,32,42,52），所述曝光区域（12,22,32,42,52）包括补正子区域（121,221,321,421,521）以及曝光子区域（122,222,322,422,522），所述补正子区域（121,221,321,421,521）设置在所述曝光子区域（122,222,322,422,522）的锐角顶点周围。

Description

一种具有曝光补正的光罩 技术领域
本发明涉及液晶显示技术领域，特别涉及一种具有曝光补正的光罩。
 背景技术
当前，液晶显示器已经广泛的应用在电子显示产品上，如电视、计算机屏幕、笔记本电脑、移动电话等。
在液晶显示器中，为保证液晶的偏转角度，需要保证在面板中形成的电场强度。然而，在广视角（FFS）显示模式中，电场为横向分布，从而更需要保证像素电极的曝光精度，从而得到均匀的电场，使液晶均匀偏转。
在制作光罩的过程中，当光罩上的尺寸小于曝光机的最小精度，由于曝光精度的限制，不能完全复制设计的图形，假设如果是锐角，经过曝光、蚀刻制作过程后，得到的光罩上的图形会形成圆角，如果使用这样的光罩，会使电场不均匀，影响液晶的偏转，形成暗带，从而影响产品的制作质量，进而影响到显示器的显示效果。
故，有必要提供一种光罩，以解决现有技术所存在的问题。
 技术问题
为了避免由于曝光精度的限制，不能完全复制光罩设计的图形，本发明提供一种具有曝光补正的光罩。
 技术解决方案
本发明提供一种具有曝光补正的光罩，包括遮光区域和被遮光区域包围的曝光区域,其中，
所述曝光区域包括补正子区域以及曝光子区域，
所述补正子区域设置在所述曝光子区域的锐角顶点周围；所述补正子区域与所述曝光子区域连通；当所述补正子区域为圆形区域时，所述圆形区域的直径小于曝光机的曝光最小精度；所述椭圆形区域的长轴方向平行于所述锐角的中线且所述曝光椭圆形的短轴长小于曝光机的曝光最小精度。
本发明提供一种具有曝光补正的光罩，包括遮光区域和被遮光区域包围的曝光区域，所述曝光区域包括补正子区域以及曝光子区域，所述补正子区域设置在所述曝光子区域的锐角顶点周围。在现有的光罩中，由于曝光精度的限制，该曝光区域中的锐角在曝光蚀刻后会变形成圆角形状，这样会导致电场不均匀，影响面板中的液晶偏转，因此通过将补正子区域设置在在所述曝光子区域的锐角顶点周围，且因为锐角的尺寸小于曝光机的曝光最小精度以及补正子区域的宽度小于曝光机的曝光最小精度，这样不会影响的曝光图案，即当光通过补正子区域，发生衍射，与通过锐角照射到光阻上的光相互增强，从而增加锐角顶点周围的曝光强度，从而达到增加曝光能力，经曝光蚀刻后得到想要的图案，进而使得电场分布均匀，提升液晶产品制作质量，进而提升显示器的显示效果。
在本发明中的具有曝光补正的光罩，所述补正子区域与所述曝光子区域连通。此为补正子区域的具体位置。
在本发明中的具有曝光补正的光罩，所述补正子区域包括但不限于类圆形区域。
在本发明中的具有曝光补正的光罩，当所述补正子区域为圆形区域时，所述圆形区域的直径小于曝光机的曝光最小精度。通过对补正子区域的形状及大小的限制，可以更加优化补正效果，进而提高显示器的显示效果。
在本发明中的具有曝光补正的光罩，当所述补正子区域为椭圆形区域时，所述椭圆形区域的长轴方向平行于所述锐角的中线且所述曝光椭圆形的短轴长小于曝光机的曝光最小精度。通过对补正子区域的形状及大小的限制，可以更加优化补正效果，进而提高显示器的显示效果
在本发明中的具有曝光补正的光罩，所述补正子区域与所述曝光子区域通过所述遮光区域分离。此为补正子区域的另一种具体位置。
在本发明中的具有曝光补正的光罩，所述补正子区域包括但不限于类圆形区域、环形区域以及折线区域中一个。
在本发明中的具有曝光补正的光罩，当所述补正子区域为圆形区域时，所述圆形区域的直径小于曝光机的曝光最小精度。通过对补正子区域的形状及大小的限制，可以更加优化补正效果，进而提高显示器的显示效果
在本发明中的具有曝光补正的光罩，当所述补正子区域为环形区域时，所述的环形区域的宽度小于曝光机的曝光最小精度。通过对补正子区域的形状及大小的限制，可以更加优化补正效果，进而提高显示器的显示效果。
在本发明中的具有曝光补正的光罩，当所述的补正子区域为折线区域时，所述折线区域的宽度小于曝光机的曝光最小精度。通过对补正子区域的形状及大小的限制，可以更加优化补正效果，进而提高显示器的显示效果。
本发明还提供一种具有曝光补正的光罩，包括遮光区域和被遮光区域包围的曝光区域,其中，
所述曝光区域包括补正子区域以及曝光子区域，
所述补正子区域设置在所述曝光子区域的锐角顶点周围；所述遮光区域包括本体及自所述本体向外延伸而成的延伸部。
 有益效果
与现有技术相比，本发明提供的具有曝光补正功能的光罩中曝光子区域的锐角顶点周围形成至少一补正子区域，该补正子区域取代了原有的锐角分顶点部分或补正子区域设置在锐角的周围，因此通过将补正子区域设置在在所述曝光子区域的锐角顶点周围，且因为锐角的尺寸小于曝光机的曝光最小精度以及补正子区域的宽度小于曝光机的曝光最小精度，这样不会影响的曝光图案，即通过增加曝光面积，当光通过补正子区域，发生衍射，与通过锐角照射到光阻上的光相互增强，从而增加锐角顶点周围的曝光强度，从而达到增加曝光能力，经曝光蚀刻后得到想要的图案，进而使得电场分布均匀，提升液晶产品制作质量，进而提升显示器的显示效果。
 附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面对实施例中所需要使用的附图作简单的介绍。下面描述中的附图仅为本发明的部分实施例，对于本领域普通技术人员而言，在不付出创造性劳动的前提下，还可以根据这些附图获取其他的附图。
图1为本发明中的光罩的实施例一中补正子区域为圆形区域的结构示意图；
图2为本发明中的光罩的实施例二中补正子区域为椭圆形区域的结构示意图；
图3为本发明中的光罩的实施例三中补正子区域为圆形区域的结构示意图；
图4为本发明中的光罩的实施例四中补正子区域为环形区域的结构示意图；
图5为本发明中的光罩的实施例五中补正子区域为折线区域的结构示意图；
图6为本发明中的光罩的实施例五中补正子区域为折线区域且该折线区域从该折线区域的交叉点沿两端两逐渐变窄的结构示意图。
 本发明的最佳实施方式
请参照附图中的图式，其中相同的组件符号代表相同的组件。以下的说明是基于所例示的本发明具体实施例，其不应被视为限制本发明未在此详述的其它具体实施例。
请参阅图1，为本发明的一较佳实施例提供的具有曝光补正功能的光罩1。该光罩1包括遮光区域11和曝光区域12。其中该曝光区域12被该遮光区域11包围。阴影部分为遮光区域11，空白部分为曝光区域12。
具体的，该遮光区域11包括本体111及自该本体111向外延伸而成的延伸部112。本实施例中，该本体111为矩形。该本体111包括一底边1111。可以理解的，其他实施例中该本体111的形状可以根据实际需求进行适应性调整，如方形、多边形等。
本实施例中，所述延伸部112自该本体111的底边1111斜向外延伸而成。该延伸部112大致呈U行结构。本实施例中，该延伸部112的首尾与该本体111的底边1111连接形成所述曝光区域20。可以理解的，其他实施例中，所述延伸部112的形状及数量根据实际需要进行适应性调整，只有能够与本体111连接配合形成所述曝光区域12即可。
该曝光区域12包括曝光子区域122和补正子区域121。具体的，本实施例中，该曝光子区域122大致呈菱形。也即所述延伸部112与该本体111配合形成的曝光区域12大致呈菱形。该曝光区域12位于该延伸部112与本体111连接的临界位置形成至少一锐角顶点区域。该补正子区域121设置形成在该锐角顶点区域。也即该补正子区域121设置在该曝光子区域122的锐角顶点周围。
具体的，该补正子区域121与该曝光子区域122连通。优选的，该补正子区域包括但不限于类圆形区域。本实施例中，所述补正子区域121为圆形区域，该圆形区域121的直径小于曝光机的曝光最小精度。为了达到更加的补正效果，通过多次实验可以得出，当该圆形区域121的圆心设置在锐角顶点区域的对角线上，可以使补正效果更佳，即更好的还原锐角图案，这样可以避免原锐角，因为曝光精度的限制，在曝光、蚀刻之后会形成圆角形状导致电场不均匀的情况。
请参阅图2，为本发明的一较佳实施例二提供的具有曝光补正功能的光罩2。该光罩2包括遮光区域21和曝光区域22。其中该曝光区域22被该遮光区域21包围。阴影部分为遮光区域21，空白部分为曝光区域22。该曝光区域22包括曝光子区域222和补正子区域221。该光罩的基本结构与实施例一中的相同，这里不一一详细描述，与实施例一不同之处在于该补正子区域221为椭圆形区域，所述椭圆形区域221的短轴长小于曝光机的曝光最小精度，为了达到更加的补正效果，更好的还原锐角图案，所述椭圆形区域221的长轴平行于所述锐角顶点区域的对角线。上述结论是通过多次实验可以得出，这样可以更好的避免原锐角因为曝光精度的限制，在曝光、蚀刻之后会形成圆角形状导致电场不均匀的情况。
可以理解的，所述补正子区域的相关形状设计只要能够实现增加曝光区域锐角顶点区域的曝光面积即可，具体的位置以及大小可以由曝光机等其他条件计算得出。
请参阅图3，为本发明一较佳实施例三提供的具有曝光补正功能的光罩3。该光罩3包括遮光区域31和曝光区域32。其中该曝光区域32被该遮光区域31包围。阴影部分为遮光区域31，空白部分为曝光区域32。该曝光区域32包括曝光子区域322和补正子区域321。该光罩3的结构与前述光罩1的结构基本相同。不同之处在于，所述补正子区域321设置在该曝光子区域322的锐角顶点周围，并与该曝光子区域322间隔设置，即该补正子区域321与曝光子区域322通过所述的遮光区域间隔开。具体的，该补正子区域321对应设置在遮光区域的本体上。其中补正子区域包括但不限于类圆形区域、环形区域以及折线区域中一个。
本实施例中，该补正子区域321为圆形区域。该圆形区域321的直径小于曝光机的曝光最小精度。优选的，圆形区域321的中心在锐角的对角线的延长线上。当光透过圆形区域后，发生衍射，与通过锐角部分照射到光阻上的光线相互增强，增加锐角处的曝光强度，从而达到增加曝光能力，进而增大曝光精度的目的，从而可以更好的还原锐角图案，即可以更好的避免原锐角因为曝光精度的限制，在曝光、蚀刻之后会形成圆角形状导致电场不均匀的情况。该圆形区域的边缘与锐角的顶点有一定的距离，此距离是通过曝光机根据光的波长，光源位置等条件设置的，对于本领域技术人员而言，是可以理解并计算出来的。
请参阅图4，为本发明一较佳实施例四提供的具有曝光补正功能的光罩4。该光罩4包括遮光区域41和曝光区域42。其中该曝光区域42被该遮光区域41包围。阴影部分为遮光区域41，空白部分为曝光区域42。该曝光区域42包括曝光子区域422和补正子区域421。当所述补正子区域421为环形区域时，所述的环形区域421的宽度小于曝光机的曝光最小精度，优选的，当该环形区域421的中心在锐角的对角线的延长线上。当光透过环形区域421后，发生衍射，与通过锐角部分照射到光阻上的光线相互增强，增加锐角处的曝光强度，从而达到增加曝光能力，进而增大曝光精度的目的，从而可以更好的还原锐角图案。即可以更好的避免原锐角因为曝光精度的限制，在曝光、蚀刻之后会形成圆角形状导致电场不均匀的情况。另外该环形区域距离锐角顶点有一定距离，此距离是通过曝光机根据光的波长，光源位置等条件设置的，对于本领域技术人员而言，是可以理解并计算出来的。
请参阅图5，为本发明一较佳实施例五提供的具有曝光补正功能的光罩5。该光罩5包括遮光区域51和曝光区域52。其中该曝光区域52被该遮光区域51包围。阴影部分为遮光区域51，空白部分为曝光区域52。该曝光区域52包括曝光子区域522和补正子区域521。，当所述补正子区域为折线区域521时，具体的，该折线区域521包括第一折板5211和第二折板5212，且第一折板521的一端与第二折板5212一端连接形成一个交叉点，在本实施例中，该折线区域的第一折板5211的宽度与第二折板5212的宽度均匀且一致的。具体的，该折线区域521的宽度小于曝光机的曝光最小精度。优选的，该折线区域的弯折点在锐角的对角线的延长线上。当光通过折线区域后，发生衍射，与通过锐角照射到光阻上的光相互增强，增加锐角处的曝光强度，从而达到增加曝光能力，进而增大曝光精度的目的，更好的还原锐角图案。这种补正使锐角处各个方向照射到的光强更加均匀。另外，该折线区域的边缘与锐角的边缘有一定的距离，此距离是通过曝光机根据光的波长，光源位置等条件设置的，对于本领域技术人员而言，是可以理解并计算出来的。
可以理解的，在图5的基础上结合图6，图6中折线区域523的宽度也可以是渐变的，具体的，第一折板5231的宽度与第二折板的宽度5232分别从的交叉点沿两端两逐渐变窄，且所述折线区域的最大宽度小于曝光机的曝光最小精度。
可以理解的是，上述实施例中的补正子区域的相关形状设计不局限于上述所描述的形状，可以使其他的结构，这里不一一举例描述。
与现有技术相比，本发明提供的具有曝光补正功能的光罩中曝光子区域的锐角顶点周围形成至少一补正子区域，该补正子区域取代了原有的锐角分顶点部分或补正子区域设置在锐角的顶点周围，因此通过将补正子区域设置在在所述曝光子区域的锐角顶点周围，且因为锐角的尺寸小于曝光机的曝光最小精度以及补正子区域的宽度小于曝光机的曝光最小精度，这样不会影响的曝光图案，即通过增加曝光面积，当光通过补正子区域，发生衍射，与通过锐角照射到光阻上的光相互增强，从而增加锐角顶点周围的曝光强度，从而达到增加曝光能力，经曝光蚀刻后得到想要的图案，进而使得电场分布均匀，提升液晶产品制作质量，进而提升显示器的显示效果。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (20)

  1. 一种具有曝光补正的光罩，包括遮光区域和被遮光区域包围的曝光区域,其中，
    所述曝光区域包括补正子区域以及曝光子区域，
    所述补正子区域设置在所述曝光子区域的锐角顶点周围；所述补正子区域与所述曝光子区域连通；当所述补正子区域为圆形区域时，所述圆形区域的直径小于曝光机的曝光最小精度；所述椭圆形区域的长轴方向平行于所述锐角的中线且所述曝光椭圆形的短轴长小于曝光机的曝光最小精度。
  2. 一种具有曝光补正的光罩，包括遮光区域和被遮光区域包围的曝光区域,其中，
    所述曝光区域包括补正子区域以及曝光子区域，
    所述补正子区域设置在所述曝光子区域的锐角顶点周围；所述遮光区域包括本体及自所述本体向外延伸而成的延伸部。
  3. 根据权利要求2所述的具有曝光补正的光罩，其中，所述补正子区域与所述曝光子区域连通。
  4. 根据权利要求3所述的具有曝光补正的光罩，其中，所述补正子区域包括但不限于类圆形区域。
  5. 根据权利要求4所述的具有曝光补正的光罩，其中，当所述补正子区域为圆形区域时，所述圆形区域的直径小于曝光机的曝光最小精度。
  6. 根据权利要求4所述的具有曝光补正的光罩，其中，当所述补正子区域为椭圆形区域时，所述椭圆形区域的长轴方向平行于所述锐角的中线且所述曝光椭圆形的短轴长小于曝光机的曝光最小精度。
  7. 根据权利要求2所述的具有曝光补正的光罩，其中，所述补正子区域与所述曝光子区域通过所述遮光区域分离。
  8. 根据权利要求7所述的具有曝光补正的光罩，其中，所述补正子区域包括但不限于类圆形区域、环形区域以及折线区域中一个。
  9. 根据权利要求8所述的具有曝光补正的光罩，其中，当所述补正子区域为圆形区域时，所述圆形区域的直径小于曝光机的曝光最小精度。
  10. 根据权利要求8所述的具有曝光补正的光罩，其中，当所述补正子区域为环形区域时，所述的环形区域的宽度小于曝光机的曝光最小精度。
  11. 一种具有曝光补正的光罩，包括遮光区域和被遮光区域包围的曝光区域, 其中，
    所述曝光区域包括补正子区域以及曝光子区域，
    所述补正子区域设置在所述曝光子区域的锐角顶点周围。
  12. 根据权利要求11所述的具有曝光补正的光罩，其中，所述补正子区域与所述曝光子区域连通。
  13. 根据权利要求12所述的具有曝光补正的光罩，其中，所述补正子区域包括但不限于类圆形区域。
  14. 根据权利要求13所述的具有曝光补正的光罩，其中，当所述补正子区域为圆形区域时，所述圆形区域的直径小于曝光机的曝光最小精度。
  15. 根据权利要求13所述的具有曝光补正的光罩，其中，当所述补正子区域为椭圆形区域时，所述椭圆形区域的长轴方向平行于所述锐角的中线且所述曝光椭圆形的短轴长小于曝光机的曝光最小精度。
  16. 根据权利要求11所述的具有曝光补正的光罩，其中，所述补正子区域与所述曝光子区域通过所述遮光区域分离。
  17. 根据权利要求16所述的具有曝光补正的光罩，其中，所述补正子区域包括但不限于类圆形区域、环形区域以及折线区域中一个。
  18. 根据权利要求17所述的具有曝光补正的光罩，其中，当所述补正子区域为圆形区域时，所述圆形区域的直径小于曝光机的曝光最小精度。
  19. 根据权利要求17所述的具有曝光补正的光罩，其中，当所述补正子区域为环形区域时，所述的环形区域的宽度小于曝光机的曝光最小精度。
  20. 根据权利要求17所述的具有曝光补正的光罩，其中，当所述的补正子区域为折线区域时，所述折线区域的宽度小于曝光机的曝光最小精度。
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