WO2018000531A1 - 太赫兹探测装置 - Google Patents

太赫兹探测装置 Download PDF

Info

Publication number
WO2018000531A1
WO2018000531A1 PCT/CN2016/094678 CN2016094678W WO2018000531A1 WO 2018000531 A1 WO2018000531 A1 WO 2018000531A1 CN 2016094678 W CN2016094678 W CN 2016094678W WO 2018000531 A1 WO2018000531 A1 WO 2018000531A1
Authority
WO
WIPO (PCT)
Prior art keywords
resistor
module
dipole antenna
amplifying circuit
stage amplifying
Prior art date
Application number
PCT/CN2016/094678
Other languages
English (en)
French (fr)
Inventor
邓仕发
潘奕
李辰
丁庆
Original Assignee
深圳市太赫兹系统设备有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳市太赫兹系统设备有限公司 filed Critical 深圳市太赫兹系统设备有限公司
Publication of WO2018000531A1 publication Critical patent/WO2018000531A1/zh

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/0204—Compact construction
    • G01J1/0209—Monolithic
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/12—Supports; Mounting means
    • H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/12—Supports; Mounting means
    • H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/225—Supports; Mounting means by structural association with other equipment or articles used in level-measurement devices, e.g. for level gauge measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/50—Structural association of antennas with earthing switches, lead-in devices or lightning protectors

Definitions

  • the invention relates to the field of terahertz detection technology, and in particular to a terahertz detection device.
  • Terahertz waves are electromagnetic waves with a frequency between 0.1 and 10 THz.
  • the wavelength of the terahertz wave is short and there is no ionizing radiation. It also contains a wealth of spectral information that can be used to identify the substance class and composition. Terahertz technology has great application prospects in the fields of medical care, food, safety monitoring, and military.
  • terahertz waves use femtosecond lasers to excite semiconductor surfaces and utilize photoconductive emission and reception mechanisms for generation and detection.
  • the terahertz photoconductive detector couples terahertz electromagnetic waves through a photoconductive antenna on a semiconductor material to form a high-speed movement of carriers, thereby generating an instantaneous current.
  • the time constant ⁇ collected by the circuit can indicate the rate at which the output signal of the terahertz waveform detecting device changes with the incoming terahertz wave.
  • the output of the detector when the incident terahertz wave suddenly illuminates and disappears, the output of the detector is not It will immediately reach the maximum value or fall to zero, but will exhibit a corresponding slow rise and fall with the time constant ⁇ .
  • the system equivalent time constant ⁇ reflects the response time and dynamic characteristics of the device.
  • the noise current and the coupled noise current generated by the input current noise, shot noise, Johnson noise, etc. of the amplification module will be higher than those generated by the terahertz wave. Actual current.
  • the impedance of the amplifier does not match the impedance of the photoconductive antenna, which also reduces the S/N ratio of the device.
  • a terahertz detecting device for detecting a terahertz wave signal generated by femtosecond laser radiation including a PCB board and a photoconductive module, a response adjustment module, and an amplification module disposed on the PCB board,
  • the photoconductive module, the response adjusting module, and the amplifying module are electrically connected in sequence;
  • the photoconductive module is configured to simultaneously receive an external femtosecond laser and a terahertz wave, and form a potential difference of the terahertz wave signal;
  • the amplification module is configured to receive and amplify the terahertz wave signal
  • the response adjustment adjustment module is configured to adjust a signal to noise ratio between the photoconductive module and the amplification module.
  • the photoconductive module includes a substrate layer, a photoconductive layer, a photoconductive gate, and a bipolar dipole antenna disposed on the photoconductive gate;
  • the bipolar dipole antenna includes a positive dipole antenna and a negative dipole antenna
  • the response adjustment module is respectively connected to the positive dipole antenna and the negative dipole antenna.
  • the response adjustment module includes a first resistor and a first capacitor; the first resistor is coupled in parallel with the first capacitor;
  • One end of the first resistor is connected to the positive dipole antenna, and the other end of the first resistor is connected to the negative dipole antenna.
  • the resistance of the first resistor is equal to the equivalent resistance of the bipolar dipole antenna.
  • the amplification module includes a first stage amplification circuit, a second stage amplification circuit, and a third stage amplification circuit;
  • the first stage amplifying circuit, the second stage amplifying circuit, and the third stage amplifying circuit are electrically connected in sequence;
  • the first stage amplifying circuit is configured to amplify the terahertz wave signal
  • the second stage amplifying circuit is configured to adjust an amplification gain of the terahertz wave signal
  • the third stage amplifying circuit is for reducing an output impedance of the terahertz detecting device.
  • the first stage amplifying circuit comprises a first coupling resistor and an instrumentation amplifier
  • Two ends of the first coupling resistor are respectively connected to the positive dipole antenna and the negative dipole antenna;
  • An in-phase input of the instrumentation amplifier is coupled to the positive dipole antenna, an inverting input of the instrumentation amplifier is coupled to the negative dipole antenna; an output of the instrumentation amplifier and the second The stage amplifier circuit is connected.
  • the first stage amplifying circuit further includes a second resistor and a third resistor, and the second resistor and the third resistor have the same resistance;
  • One end of the second resistor is connected to the positive dipole antenna, and the other end of the second resistor is grounded; one end of the third resistor is connected to the negative dipole antenna, and the other end of the third resistor Ground.
  • the second stage amplifying circuit includes a second coupling resistor, a first operational amplifier, a digital potentiometer, and a bias voltage divider;
  • An inverting input end of the first operational amplifier is coupled to an output of the first stage amplifying circuit via the second coupling resistor; a non-inverting input of the first operational amplifier and the bias voltage divider connection;
  • the digital potentiometer is connected between the inverting input end and the output end of the first operational amplifier
  • An output of the first operational amplifier is coupled to the third stage amplifying circuit.
  • the bias voltage divider includes a fourth resistor, a fifth resistor, and a sixth resistor;
  • the fourth resistor, the fifth resistor, and the sixth resistor are sequentially connected in series with an external power supply to form a loop, and the fifth resistor is a sliding rheostat.
  • the non-inverting input of the first operational amplifier is coupled to the fifth resistor.
  • the third stage amplifying circuit includes a third coupling resistor and a voltage follower
  • the non-inverting input of the voltage follower is connected to the output of the second stage amplifying circuit via the third coupling resistor, and the negative input of the voltage follower is connected to the output of the voltage follower.
  • the terahertz detecting device integrates the photoconductive module, the response adjusting module and the amplifying module on the same PCB board, and is housed in the same device, so that the photoconductive module and the amplifying module are close to each other, and the matching resistance, capacitance and electric charge are added.
  • the release of the resistor minimizes the response time of the device, while eliminating and suppressing the transmission and coupling of noise, maximizing the signal-to-noise ratio and sampling rate.
  • the volume of the terahertz detecting device is reduced, and the cost is saved.
  • Figure 1 is a structural frame diagram of a terahertz detecting device
  • FIG. 2 is a schematic structural view of a photoconductive module
  • FIG. 3 is an equivalent circuit diagram of the instrumentation amplifier
  • FIG. 4 is a circuit diagram of an amplification module.
  • FIG. 1 is a structural diagram of a terahertz detecting device for detecting a terahertz wave signal generated by femtosecond laser radiation, including a PCB board (not shown) and a photoconductive module 100 disposed on the PCB board, The response module 200 and the amplification module 300 are responsive.
  • the photoconductive module 100, the response adjustment module 200, and the amplification module 300 are electrically connected in sequence; the photoconductive module 100 is configured to simultaneously receive an external femtosecond laser and a terahertz wave, and form a potential difference of the terahertz wave signal; the amplification module 300 And configured to receive and amplify the terahertz wave signal; and the response adjustment adjustment module is configured to adjust a signal to noise ratio between the photoconductive module 100 and the amplification module 300.
  • the photoconductive module 100 includes a substrate layer 110 , a photoconductive layer 120 , a photoconductive gate 130 , and a bipolar couple disposed on the photoconductive gate.
  • Polar antenna 140 The substrate layer 110 is semi-insulating gallium arsenide (SI-GaAs); the photoconductive layer 120 is composed of low-temperature grown gallium arsenide (LT-GaAs), and the bipolar dipole antenna 140 is made of semi-insulating gallium arsenide ( SI-GaAs).
  • SI-GaAs semi-insulating gallium arsenide
  • the bipolar dipole antenna 140 includes a positive dipole antenna 141 and a negative dipole antenna 143.
  • Positive dipole The polarities of the charges of the antenna 141 and the negative electrode dipole antenna 143 are not limited by the positions of the positive electrode dipole antenna 141 and the negative electrode dipole antenna 143, that is, the positions of the positive electrode dipole antenna 141 and the negative electrode dipole antenna 143 are interchangeable.
  • the response adjustment module 200 is disposed at both ends of the positive electrode dipole antenna 141 and the negative electrode dipole antenna 143.
  • the photoconductive module 100 in the terahertz detecting device When the photoconductive module 100 in the terahertz detecting device is simultaneously irradiated by the femtosecond laser and the terahertz incident wave, the electric charge will flow from one pole of the bipolar dipole antenna 140 to the other pole, and the bipolar dipole antenna 140 A terahertz potential difference is generated between the positive and negative poles, wherein the current pulse of the equivalent terahertz wave signal is proportional to the generated terahertz electromotive force; the current pulse of the equivalent terahertz wave signal and the positive of the bipolar dipole antenna
  • the negative pole equivalent resistance value is inversely proportional.
  • the amplification module 300 includes a first stage amplification circuit 310, a second stage amplification circuit 320, and a third stage amplification circuit 330.
  • the first stage amplifying circuit 310, the second stage amplifying circuit 320, and the third stage amplifying circuit 330 are electrically connected in order.
  • the first stage amplifying circuit 310 is configured to perform amplification of a fixed gain multiple on the terahertz wave signal.
  • the second stage amplifying circuit 320 is for adjusting the amplification gain of the terahertz wave signal.
  • the third stage amplifying circuit 330 is for reducing the output impedance of the terahertz detecting device.
  • the first stage amplifying circuit 310 includes a first coupling resistor R1' and an instrumentation amplifier U1. Both ends of the first coupling resistor R1' are connected to the positive dipole antenna 141 and the negative dipole antenna 143, respectively.
  • the first coupling resistor R1' is used to match the trace resistance in the device.
  • the non-inverting input of the instrumentation amplifier U1 is connected to the positive dipole antenna 141, the inverting input of the instrumentation amplifier U1 is connected to the negative dipole antenna 143, and the output of the instrumentation amplifier U1 is connected to the second-stage amplifying circuit 320.
  • FIG. 3 shows the equivalent circuit diagram of the instrumentation amplifier.
  • the differential input time constant ⁇ DIFF of the instrumentation amplifier U1 is shown in equation (1):
  • C CM+ is the non-inverting input common mode capacitor of instrumentation amplifier U1;
  • C CM- is the inverting input common mode capacitor of instrumentation amplifier U1;
  • C DIFF is the differential mode input capacitance of instrumentation amplifier U1.
  • C CM+ , C CM- , and C DIFF together form the equivalent input capacitance C IN of the instrumentation amplifier U1 , and the equivalent input capacitance C IN is typically 1 to 20 pF.
  • R IN+ is the trace equivalent resistance of the instrument amplifier U1 front-end input to the non-inverting input of the amplifier
  • R IN+ is the trace equivalent resistance of the instrument amplifier U1 front-end input to the inverting input of the amplifier.
  • the inverting input common mode capacitor C CM- will introduce a pole in the closed loop of the instrumentation amplifier U1, which may cause the first stage amplifying circuit 310 to be self-excited or unstable under certain special conditions.
  • the input capacitance of the first stage amplifying circuit 310 is not only composed of the input capacitance of the instrumentation amplifier U1, but also the stray capacitance of the wiring leads, the pin capacitance of the package, and the coupling capacitance.
  • the ground layer around the inverting input terminal of the instrumentation amplifier U1 is removed, and the lead connection is made as short as possible, thereby minimizing the generation of stray capacitance and pin capacitance coupling capacitance.
  • the module 100 of the resistors R PT photoconductive photoconductive gate is the equivalent resistance R PT, the capacitance C A of the bipolar dipole antenna 140 of the equivalent capacitance C A.
  • the equivalent resistance R PT, the equivalent capacitance C A dipole antenna is a bipolar inherent characteristics 140, by processes and materials limitations, related to the production of the photoconductive structure.
  • the resistance of the equivalent resistor R PT is about 10 7 ohms
  • the stable value of the capacitance of the equivalent capacitor C A is about 0.5 pF
  • the capacitance of the equivalent capacitor C A is 0.3 to 0.7 pF. Fluctuating between.
  • the resistance of the equivalent resistance R PT and the capacitance of the equivalent capacitance C A are determined by the fabrication process and material properties of the bipolar dipole antenna 140.
  • the photoconductive module 100 is connected to the first stage amplifying circuit 310 through the response adjusting module 200.
  • the total time constant ⁇ receiver of the terahertz detecting device the total time constant ⁇ receiver is determined by the photoconductive module 100 and the amplifying module 300, that is, the response speed of the photoconductive module 100 and the first-stage amplifying circuit 310 has a total time constant ⁇
  • the receiver decides.
  • the total time constant ⁇ receiver is determined by the total equivalent resistance R receiver and the total equivalent capacitance C receiver .
  • the equivalent capacitance C A and the equivalent resistance R PT of the bipolar dipole antenna 40 are specific values, and are affected by the manufacturing process and material of the bipolar dipole antenna 40.
  • the equivalent input capacitance C IN of instrumentation amplifier U1 and the equivalent input resistance R IN of instrumentation amplifier U1 are determined by R IN1 , R IN2 , R IN3 . Its equivalent input capacitance C IN and equivalent input resistance R IN are inherent properties of the instrumentation amplifier U1 and are also specific values.
  • the model of the instrumentation amplifier U1 is INA115, and the resistance of the equivalent input resistance R IN is generally between 10 11 and 10 12 ⁇ .
  • the response adjustment module 200 includes a first resistor R1 and a first capacitor C1.
  • the first resistor R1 is connected in parallel with the first capacitor C1; one end of the first resistor R1 is connected to the positive dipole antenna 141, and the other end of the first resistor R1 is connected to the negative dipole antenna 143.
  • the total equivalent resistance R receiver of the device is as shown in the formula (4):
  • R receiver R PT //R1//R IN (4)
  • the time constant ⁇ receiver In a high speed acquisition circuit, the smaller the total time constant ⁇ receiver , the better the response of the device to the input signal. (6) It can be seen by the equation, the time constant can be reduced total ⁇ receiver by reducing the total equivalent resistance R receiver and the total equivalent capacitance C receiver.
  • the equivalent capacitance C A of the bipolar dipole antenna 140 is limited by the process and materials, it is related to the fabrication of the photoconductive structure, and the capacitance of the equivalent capacitor C A is between 0.3 and 0.7 pF.
  • the first capacitor C1 can reduce the length of the signal trace by integrating the instrumentation amplifier U1 on the bipolar dipole antenna 140 or as close as possible to the bipolar dipole antenna 140, thereby eliminating the formation of stray capacitance and coupling capacitance. , you can get the minimum capacitance.
  • the capacitance value of the first capacitor C1 is in the range of 0.4 to 5 pF. In other embodiments, the capacitance value of the first capacitor C1 may be determined according to the design of each component of the specific terahertz detecting device. It is not limited to the scope given by the embodiment.
  • the resistance of the equivalent input resistance R IN of the instrumentation amplifier U1 is 10 11 to 10 12 ⁇ , and the resistance of the equivalent resistance R PT of the bipolar dipole antenna 140 is about 10 7 ohms.
  • the equivalent input resistance R IN of amplifier U1 is much larger than the equivalent resistance R PT of the photoconductive gate. If the first resistor R1 is much larger than the equivalent input resistance R IN of the instrumentation amplifier U1 and the equivalent resistance R PT of the bipolar dipole antenna 140, the equation (6) can approximate the equation (7):
  • ⁇ receiver R PT ⁇ (C A +C1+C IN ) (7)
  • ⁇ receiver R1 ⁇ (C A +C1+C IN ) (8)
  • the total time constant ⁇ receiver can be adjusted by adjusting the first capacitor C1 and the first resistor R1 to minimize the response time of the device, and at the same time eliminate and suppress the transmission and coupling of noise to realize signal noise.
  • the performance of the terahertz detection device is improved by maximizing the sampling rate.
  • the resistance of the first resistor R1 can be made equal to the equivalent resistance R PT of the bipolar dipole antenna.
  • the resistance of the first resistor R1 is equal to the equivalent resistance R PT of the bipolar dipole antenna 420, the total time constant ⁇ receiver is small, and the total response speed is fast.
  • the first stage amplifying circuit 310 further includes a second resistor R2 and a third resistor R3, and the second resistor R2 and the third resistor R3 have the same resistance.
  • One end of the second resistor R2 is connected to the positive dipole antenna 141, and the other end of the second resistor R2 is grounded.
  • One end of the third resistor R3 is connected to the negative dipole antenna 143, and the other end of the third resistor R3 is grounded.
  • the relative voltage generated by the bipolar dipole antenna 140 on the photoconductive gate 130 sensing the terahertz wave may exceed the common mode input voltage range of the instrumentation amplifier U1, by setting the second The resistor R2 and the third resistor R3 provide a bleeder loop for the charge accumulated by the bipolar dipole antenna 140, and do not cause interference or influence on the performance and noise suppression capability of the first-stage amplifier circuit 310.
  • the resistance values of the second resistor R2 and the third resistor R3 are equal, and are far greater than the equivalent resistance R PT of the bipolar dipole antenna 140, and the overall response speed can be optimized to some extent.
  • Instrumentation amplifier U1 is connected through feedback resistor R F and feedback resistor R F between the two feedback terminals of instrumentation amplifier U1.
  • the amplification gain of instrumentation amplifier U1 ranges from 100 to 10000.
  • feedback resistor R F By setting feedback resistor R F, instrumentation amplifier U1 has a higher input resistance.
  • Instrumentation amplifier U1 has a high common-mode rejection ratio to ensure the integrity of the terahertz wave signal.
  • the second stage amplification circuit 320 includes a second coupling resistor R2', a first operational amplifier U2, a digital potentiometer U3, and a bias voltage divider 321 .
  • the inverting input of the first operational amplifier U2 is coupled to the output of the first stage amplifying circuit 310 via a second coupling resistor R2'; the non-inverting input of the first operational amplifier U2 is coupled to a bias voltage divider 321 .
  • the digital potentiometer U3 is connected between the inverting input terminal and the output terminal of the first operational amplifier U2; the output terminal of the first operational amplifier U2 is connected to the third-stage amplifying circuit.
  • the terahertz wave signal outputted by the first stage amplifying circuit 310 is coupled to the inverting input terminal of the first operational amplifier U2 of the second stage amplifying circuit 320 through the second coupling resistor R2', while being in the non-inverting input of the first operational amplifier U2.
  • the terminal is connected to a bias voltage divider 321 which includes a fourth resistor R4, a fifth resistor R5 and a sixth resistor R6.
  • the fourth resistor R4, the fifth resistor R5 and the sixth resistor R6 are sequentially connected in series with the external power supply to form a loop, and the fifth resistor R5 is a sliding rheostat.
  • the non-inverting input terminal of the first operational amplifier U2 is connected to the fifth resistor R5.
  • the external power supply is a 5 volt DC power supply
  • the fourth resistor R4 is connected to the anode of the DC power source
  • the sixth resistor R6 is connected to the cathode of the DC power source.
  • the bias voltage divider 321 can boost the output signal to above zero voltage.
  • the feedback loop of the second stage amplifying circuit 320 is composed of a digital potentiometer U3.
  • the resistance of the digital potentiometer U3 is adjusted according to the strength of the terahertz wave signal, so that the total gain of the first stage amplifying circuit 310 and the second stage amplifying circuit 320 can be made.
  • the magnification is fluctuated within the range of 100 to 10,000, that is, by the synergistic action of the first stage amplifying circuit 310 and the second stage amplifying circuit 320, the amplification gain of the entire device can be in the range of 100 to 10,000.
  • the third stage amplifying circuit 330 includes a third coupling resistor R3' and a voltage follower U4.
  • the non-inverting input of the voltage follower U4 is connected to the output of the second stage amplifying circuit 320 via the third coupling resistor R3', and the negative input of the voltage follower U4 is connected to the output of the voltage follower U4.
  • the signal outputted by the second stage amplifying circuit 320 is coupled to the non-inverting input terminal of the voltage follower U4 of the third stage amplifying circuit 330 via the third coupling resistor R3', thereby reducing the output impedance of the device and also isolating the subsequent circuit.
  • the effect of reducing the influence of the subsequent analog-to-digital conversion circuit on the amplification module 300 is reduced.
  • the time constant is satisfied, and the response effect of the terahertz detecting device is optimized.
  • the working principle of the terahertz detection device when the photoconductive module 100 in the terahertz detection device is subjected to After the femtosecond laser and the terahertz incident wave are simultaneously irradiated, the electric charge flows from one pole of the bipolar dipole antenna 140 to the other pole, and a terahertz potential difference is generated between the positive and negative poles of the bipolar dipole antenna 140.
  • the positive and negative poles of the bipolar dipole antenna are respectively connected to the in-phase and inverting input terminals of the instrumentation amplifier U1 for first-stage amplification, and then level-up and second-stage amplification.
  • the gain of the second stage amplifying circuit 320 can be adjusted by the digital potentiometer U3 according to the strength of the terahertz wave.
  • the third stage amplifying circuit 330 has an isolation protection function for the entire device.
  • the photoconductive module 100, the adjustment response module 200, and the amplification module 300 are integrated on the same PCB, and are accommodated in the same device, and the matching resistance, capacitance and charge release resistance are added, so that the response time of the device is optimal, and the sum is eliminated.
  • the transmission and coupling of noise are suppressed, the signal-to-noise ratio and the sampling rate are maximized, and the volume of the terahertz detecting device is reduced, thereby saving cost.
  • the sensitivity, bandwidth, response time, dynamic characteristics and signal-to-noise ratio performance of the terahertz detection device have been greatly improved.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)

Abstract

一种太赫兹探测装置，用于探测飞秒激光辐射产生的太赫兹波信号，包括PCB板以及设置在PCB板上的光电导模块（100）、响应调节模块（200）和放大模块（300）。太赫兹探测装置，将光电导模块（100）、响应调节模块（200）和放大模块（300）容置于同一个装置中，使得光电导模块（100）与放大模块（300）相互靠近，增加了匹配电阻、电容及电荷释放电阻；同时通过调节响应调节模块（200）使得太赫兹探测装置的响应时间达到最小，消除和抑制了噪声的传输和耦合，实现了信噪比及采样率的最大化。同时缩小了太赫兹探测装置的体积，节约了成本。

Description

太赫兹探测装置 技术领域
本发明涉及太赫兹探测技术领域，特别是涉及太赫兹探测装置。
背景技术
太赫兹波(THz波)是指频率在0.1～10THz之间的电磁波，太赫兹波的波长短、没有电离辐射产生，同时还包含了丰富的光谱信息，可以用于鉴别物质类别和成分。太赫兹技术在医疗、食品、安全监测、军事等领域具有很大的应用前景。
随着超快激光技术的不断进步，太赫兹波是利用飞秒激光激发半导体表面和利用光电导发射接收机制进行产生和探测。其中，太赫兹光电导探测器是通过半导体材料上面的光导天线耦合太赫兹电磁波，形成载流子高速运动，从而产生瞬间电流。在太赫兹探测装置中，电路采集的时间常数τ可表示太赫兹波形探测装置输出信号随射入的太赫兹波变化的速率，例如入射的太赫兹波突然照射和消失时，探测器的输出不会立刻到达最大值或下降至零，而是随着时间常数τ的不同呈现对应的缓慢上升和下降。系统等效时间常数τ反应了装置的响应时间及动态特性。但是，当太赫兹信号较弱或光电导体的光强照度非常低时，放大模块的输入电流噪声、散粒噪声、约翰逊噪声等形成的噪声电流及耦合噪声电流，将高于太赫兹波所产生的实际电流。同时，放大器的阻抗与光电导天线的阻抗不匹配也会降低装置的性噪比。
发明内容
基于此，有必要针对上述问题，提供一种将光电导模块、响应调节模块及放大模块集成在同一PCB板上，消除和抑制噪声的传输和耦合，同时提高信噪比的太赫兹探测装置。
一种太赫兹探测装置，用于探测飞秒激光辐射产生的太赫兹波信号，包括 PCB板以及设置在所述PCB板上的光电导模块、响应调节模块和放大模块，
所述光电导模块、响应调节模块、放大模块依次电连接；
所述光电导模块用于同时接收外部的飞秒激光和太赫兹波，并形成所述太赫兹波信号的电位差；
所述放大模块用于接收和放大所述太赫兹波信号；
所述响应调节调节模块用于调节所述光电导模块与所述放大模块之间的信噪比。
在其中一个实施例中，所述光电导模块包括依次层叠的衬底层、光电导层、光电导栅极以及设置在所述光电导栅极上的双极型偶极天线；
所述双极型偶极天线包括正极偶极天线和负极偶极天线；
所述响应调节模块分别与所述正极偶极天线、负极偶极天线连接。
在其中一个实施例中，所述响应调节模块包括第一电阻和第一电容；所述第一电阻与第一电容并联；
所述第一电阻的一端与所述正极偶极天线连接，所述第一电阻的另一端与所述负极偶极天线连接。
在其中一个实施例中，所述第一电阻的阻值与所述双极型偶极天线的等效电阻相等。
在其中一个实施例中，所述放大模块包括第一级放大电路、第二级放大电路和第三级放大电路；
所述第一级放大电路、第二级放大电路、第三级放大电路依次电连接；
所述第一级放大电路用于对所述太赫兹波信号进行放大；
所述第二级放大电路用于调节所述太赫兹波信号的放大增益；
所述第三级放大电路用于降低所述太赫兹探测装置的输出阻抗。
在其中一个实施例中，所述第一级放大电路包括第一耦合电阻和仪表放大器；
所述第一耦合电阻的两端分别与所述正极偶极天线、负极偶极天线连接；
所述仪表放大器的同相输入端与所述正极偶极天线连接，所述仪表放大器的反相输入端与所述负极偶极天线连接；所述仪表放大器的输出端与所述第二 级放大电路连接。
在其中一个实施例中，所述第一级放大电路还包括第二电阻和第三电阻，且所述第二电阻与第三电阻的阻值相等；
所述第二电阻的一端与所述正极偶极天线连接，所述第二电阻的另一端接地；所述第三电阻的一端与所述负极偶极天线连接，所述第三电阻的另一端接地。
在其中一个实施例中，所述第二级放大电路包括第二耦合电阻、第一运算放大器、数字电位器和偏置电压分压器；
所述第一运算放大器的反相输入端经所述第二耦合电阻与所述第一级放大电路的输出端连接；所述第一运算放大器的同相输入端与所述偏置电压分压器连接；
所述数字电位器连接在所述第一运算放大器的反相输入端与输出端之间；
所述第一运算放大器的输出端与所述第三级放大电路连接。
在其中一个实施例中，所述偏置电压分压器包括第四电阻、第五电阻和第六电阻；
所述第四电阻、第五电阻和第六电阻与外部供电电源依次串联形成回路，且所述第五电阻为滑动变阻器，
所述第一运算放大器的同相输入端与所述第五电阻连接。
在其中一个实施例中，所述第三级放大电路包括第三耦合电阻和电压跟随器；
所述电压跟随器的同相输入端经所述第三耦合电阻与所述第二级放大电路的输出端连接，所述电压跟随器的负向输入端与所述电压跟随器的输出端连接。
上述太赫兹探测装置，将光电导模块、响应调节模块和放大模块集成在同一PCB板上，容置于同一个装置中，使得光电导模块与放大模块相互靠近，增加了匹配电阻、电容及电荷释放电阻，使装置的响应时间达到最小，同时消除和抑制了噪声的传输和耦合，实现了信噪比及采样率的最大化。同时缩小了该太赫兹探测装置的体积，节约了成本。
附图说明
图1为太赫兹探测装置结构框架图；
图2为光电导模块的结构示意图；
图3为仪表放大器的等效电路图；
图4为放大模块的电路图。
具体实施方式
为了便于理解本发明，下面将参照相关附图对本发明进行更全面的描述。附图中给出了本发明的较佳实施例。但是，本发明可以以许多不同的形式来实现，并不限于本文所描述的实施例。相反地，提供这些实施例的目的是使对本发明的公开内容的理解更加透彻全面。
除非另有定义，本文所使用的所有的技术和科学术语与属于本发明的技术领域的技术人员通常理解的含义相同。本文中在本发明的说明书中所使用的术语只是为了描述具体的实施例的目的，不是旨在限制本发明。本文所使用的术语“和/或”包括一个或多个相关的所列项目的任意的和所有的组合。
如图1所示的为太赫兹探测装置结构框架图，用于探测飞秒激光辐射产生的太赫兹波信号，包括PCB板(图中未示)以及设置在PCB板上的光电导模块100、响应调节模块200和放大模块300。其中，光电导模块100、响应调节模块200、放大模块300依次电连接；光电导模块100用于同时接收外部的飞秒激光和太赫兹波，并形成太赫兹波信号的电位差；放大模块300用于接收和放大所述太赫兹波信号；响应调节调节模块用于调节光电导模块100与放大模块300之间的信噪比。
如图2所示的为光电导模块100的结构示意图，光电导模块100包括依次层叠的衬底层110、光电导层120、光电导栅极130以及设置在光电导栅极上的双极型偶极天线140。其中，衬底层110为半绝缘砷化镓(SI-GaAs)；光电导层120由低温生长砷化镓(LT-GaAs)构成，双极型偶极天线140的材料为半绝缘砷化镓(SI-GaAs)。
双极型偶极天线140包括正极偶极天线141和负极偶极天线143。正极偶极 天线141和负极偶极天线143的电荷的极性不受正极偶极天线141和负极偶极天线143位置的限制，也就是说正极偶极天线141和负极偶极天线143的位置可以互换。响应调节模块200设置在正极偶极天线141与负极偶极天线143的两端。
当太赫兹探测装置内的光电导模块100受到飞秒激光和太赫兹入射波同时照射后，电荷将从双极型偶极天线140的一极流向另一极，双极型偶极天线140的正负两极之间产生太赫兹电位差，其中，等效太赫兹波信号的电流脉冲与所产生的太赫兹电动势成正比；等效太赫兹波信号的电流脉冲与双极型偶极天线的正负两极等效电阻值成反比例关系。
参考图1，放大模块300包括第一级放大电路310、第二级放大电路320和第三级放大电路330。第一级放大电路310、第二级放大电路320、第三级放大电路330依次电连接。第一级放大电路310用于对太赫兹波信号进行固定增益倍数的放大。第二级放大电路320用于调节太赫兹波信号的放大增益。第三级放大电路330用于降低太赫兹探测装置的输出阻抗。
其中，第一级放大电路310包括第一耦合电阻R1’和仪表放大器U1。第一耦合电阻R1’的两端分别与正极偶极天线141、负极偶极天线143连接。第一耦合电阻R1’用于匹配装置中的走线电阻。
仪表放大器U1的同相输入端与正极偶极天线141连接，仪表放大器U1的反相输入端与负极偶极天线143连接；仪表放大器U1的输出端与第二级放大电路320连接。
如图3所示为仪表放大器的等效电路图，其中，仪表放大器U1的差分输入时间常数τDIFF如式(1)所示：
Figure PCTCN2016094678-appb-000001
仪表放大器U1的共模输入时间常数τCM如式(2)所示：
τCM＝RIN+·CCM+＝RIN·CCM           (2)
仪表放大器U1的差分带宽BWDIFF如式(3)所示：
Figure PCTCN2016094678-appb-000002
上述公式中，CCM+为仪表放大器U1的同相输入共模电容；CCM-为仪表放大器U1的反相输入共模电容；CDIFF为仪表放大器U1的差模输入电容。CCM+、CCM-、CDIFF共同形成了仪表放大器U1的等效输入电容CIN，等效输入电容CIN的典型值为1～20pF。RIN+为仪表放大器U1前端输入至放大器同相输入端的走线等效电阻，RIN+为仪表放大器U1前端输入至放大器反相输入端的走线等效电阻。
在放大器应用电路中，反相输入共模电容CCM-将会在仪表放大器U1的闭环回路中引入一个极点，在某些特殊条件下，可能会引起第一级放大电路310自激或不稳定。第一级放大电路310的输入电容不仅由仪表放大器U1的输入电容组成，还包括布线引线的杂散电容、封装的引脚电容、耦合电容。在本实施例中，将仪表放大器U1的反相输入端周围的接地层去除，同时，使引线连接尽量短，从而最大程度的减小杂散电容、引脚电容耦合电容的产生。
参考图1，光电导模块100中的电阻RPT为光电导栅极的等效电阻RPT，电容CA为双极型偶极天线140的等效电容CA。其中，等效电阻RPT、等效电容CA是双极型偶极天线140的固有特性，受工艺和材料的限制，与光电导结构制作有关。在本实施例中，等效电阻RPT的阻值约为107欧姆，等效电容CA的电容值的稳定值约为0.5pF，等效电容CA的电容值在0.3～0.7pF之间波动。在其他实施例中，其等效电阻RPT的阻值、等效电容CA的电容值由双极型偶极天线140的制作工艺和材料特性所决定。
光电导模块100通过响应调节模块200与第一级放大电路310连接。假设太赫兹探测装置的总时间常数τreceiver，其总时间常数τreceiver由光电导模块100和放大模块300共同决定，即光电导模块100与第一级放大电路310的响应速度有总时间常数τreceiver来决定。总时间常数τreceiver是由总等效电阻Rreceiver和总等效电容Creceiver共同决定的。其中，双极型偶极天线40的等效电容CA和等效电阻RPT是特定值，受双极型偶极天线40的制作工艺和材质的影响。仪表放大器U1的等效输入电容CIN，仪表放大器U1的等效输入电阻RIN由RIN1、RIN2、RIN3决定。 其等效输入电容CIN、等效输入电阻RIN为仪表放大器U1的固有属性，也为特定值。在本实施例中，仪表放大器U1的型号为INA115，等效输入电阻RIN的阻值一般在1011～1012Ω之间。
响应调节模块200包括第一电阻R1和第一电容C1。第一电阻R1与第一电容C1并联；第一电阻R1的一端与正极偶极天线141连接，第一电阻R1的另一端与负极偶极天线143连接。
由于设置了响应调节模块200，其装置的总等效电阻Rreceiver如式(4)所示：
Rreceiver＝RPT//R1//RIN               (4)
总等效电容Creceiver如式(5)所示：
Creceiver＝CA+C1+CIN                 (5)
总时间常数τrece i ver如式(6)所示：
τreceiver＝Rreceiver·Creceiver              (6)
在高速采集电路中，总时间常数τreceiver越小越好，则该装置对输入信号的响应就会越快。通过公式(6)可以看出，可以通过减少总等效电阻Rreceiver和总等效电容Creceiver来减小总时间常数τreceiver。
由于双极型偶极天线140的等效电容CA受工艺和材料的限制，与光电导结构制作有关，等效电容CA的电容值在0.3～0.7pF之间。而第一电容C1可通过将仪表放大器U1集成在双极型偶极天线140上或尽量靠近双极型偶极天线140，进而减少信号走线的长度，可以消除杂散电容、耦合电容的形成，即可获得最小电容。在本实施例中，第一电容C1的电容值在0.4～5pF的范围内，在其他实施例中，第一电容C1的电容值可以根据具体的太赫兹探测装置的各部件的设计来确定，并不限于本实施例给出的范围。
在本实施例中，仪表放大器U1的等效输入电阻RIN的阻值为1011～1012Ω，双极型偶极天线140的等效电阻RPT的阻值约为107欧姆，仪表放大器U1的等效输入电阻RIN远远大于光电导栅极的等效电阻RPT。若第一电阻R1远远大于仪表放大器U1的等效输入电阻RIN和双极型偶极天线140的等效电阻RPT，则式(6)可近似式(7)：
τreceiver＝RPT·(CA+C1+CIN)              (7)
由式(7)可知，通过调整双极型偶极天线140的工艺和材质，可获得最优化的时间常数。但在实际应用中通过改变双极型偶极天线140实现响应的优化是具有一定的难度，但是可以通过调节第一电阻R1来优化总时间常数τreceiver，若R1<RPT且R1<RIN，则总时间常数τreceiver，可优化成式(8)：
τreceiver＝R1·(CA+C1+CIN)              (8)
由式(8)可知，可通过调节第一电容C1和第一电阻R1，来调节总时间常数τreceiver，使装置的响应时间达到最小，同时消除和抑制了噪声的传输和耦合，实现信噪比及采样率的最大化，提升太赫兹探测装置的性能。
在另一实施例中，还可以使第一电阻R1的阻值与双极型偶极天线的等效电阻RPT相等。当第一电阻R1的阻值与双极型偶极天线420的等效电阻RPT相等时，其总时间常数τreceiver较小，总响应速度较快。
第一级放大电路310还包括第二电阻R2和第三电阻R3，且第二电阻R2与第三电阻R3的阻值相等。第二电阻R2的一端与正极偶极天线141连接，第二电阻R2的另一端接地；第三电阻R3的一端与负极偶极天线143连接，第三电阻R3的另一端接地。太赫兹探测装置在探测采样过程中，光电导栅极130上的双极型偶极天线140感应太赫兹波所产生的相对电压可能会超过仪表放大器U1的共模输入电压范围，通过设置第二电阻R2和第三电阻R3，为双极型偶极天线140积累的电荷提供了泄放回路，对第一级放大电路310的性能及噪声抑制能力就不会造成干扰或影响。同时，第二电阻R2和第三电阻R3的阻值相等，且远远大于双极型偶极天线140的等效电阻RPT，也可在一定程度上优化总体的响应速度。
仪表放大器U1通过反馈电阻器RF，反馈电阻器RF连接在仪表放大器U1的两个反馈端之间。仪表放大器U1的放大增益的范围为100～10000，通过设置反馈电阻器RF使仪表放大器U1有较高的输入电阻，在探测的过程中，可以探测到低强度的太赫兹波信号，同时该仪表放大器U1具有高共模抑制比，保证了太赫兹波信号的完整性。
如图4为放大模块的电路图，第二级放大电路320包括第二耦合电阻R2’、第一运算放大器U2、数字电位器U3和偏置电压分压器321。第一运算放大器U2的反相输入端经第二耦合电阻R2’与第一级放大电路310的输出端连接；第一运算放大器U2的同相输入端与偏置电压分压器321连接。数字电位器U3连接在第一运算放大器U2的反相输入端与输出端之间；第一运算放大器U2的输出端与第三级放大电路连接。
经第一级放大电路310输出的太赫兹波信号通过第二耦合电阻R2’耦合至第二级放大电路320的第一运算放大器U2的反相输入端，同时在第一运算放大器U2的同相输入端连接偏置电压分压器321，该偏置电压分压器321包括第四电阻R4、第五电阻R5和第六电阻R6。第四电阻R4、第五电阻R5和第六电阻R6与外部供电电源依次串联形成回路，且第五电阻R5为滑动变阻器，第一运算放大器U2的同相输入端与第五电阻R5连接。在本实施例中，外部供电电源为5伏的直流电源，其第四电阻R4与直流电源的正极连接，第六电阻R6与直流电源的负极连接。该偏置电压分压器321可以将输出信号抬升至零电压以上。
第二级放大电路320的反馈回路由数字电位器U3构成，根据太赫兹波信号的强弱调节数字电位器U3的阻值，可使第一级放大电路310和第二级放大电路320总增益放大倍数在100～10000范围内波动，也就是说通过第一级放大电路310和第二级放大电路320的协同作用，可以使整个装置的放大增益在100～10000的范围内。
第三级放大电路330包括第三耦合电阻R3’和电压跟随器U4。电压跟随器U4的同相输入端经所述第三耦合电阻R3’与第二级放大电路320的输出端连接，电压跟随器U4的负向输入端与电压跟随器U4的输出端连接。
经第二级放大电路320输出的信号经第三耦合电阻R3’耦合至第三级放大电路330的电压跟随器U4的同相输入端，降低了装置的输出阻抗，同时也起到了隔离后续电路的作用，减少了后续模数转换电路对放大模块300的影响。对于第一级放大电路310、第二级放大电路320和第三级放大电路330都满足时间常数的需求，使太赫兹探测装置的响应效果达到最佳状态。
太赫兹探测装置的工作原理：当太赫兹探测装置内的光电导模块100受到 飞秒激光和太赫兹入射波同时照射后，电荷将从双极型偶极天线140的一极流向另一极，双极型偶极天线140的正负两极之间产生太赫兹电位差。双极型偶极天线的正负两极分别接至仪表放大器U1的同相和反相输入端进行第一级放大，然后进行电平抬升和第二级放大。第二级放大电路320的增益可根据太赫兹波强弱，利用数字电位器U3进行可调增益放大。第三级放大电路330对整个装置具有隔离保护的作用。
将光电导模块100、调节响应模块200、放大模块300集成于同一PCB板上，容置在同一装置中，增加了匹配电阻、电容及电荷释放电阻，使该装置的响应时间最优，消除和抑制了噪声的传输和耦合，实现了信噪比及采样率的最大化，同时缩小了该太赫兹探测装置的体积，节约了成本。通过设置多级放大电路，使太赫兹探测装置的灵敏度、带宽、响应时间、动态特性及信噪比性能都得到了大幅提升。
以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。
以上所述实施例仅表达了本发明的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进，这些都属于本发明的保护范围。因此，本发明专利的保护范围应以所附权利要求为准。

Claims (10)

  1. 一种太赫兹探测装置，用于探测飞秒激光辐射产生的太赫兹波信号，其特征在于，包括PCB板以及设置在所述PCB板上的光电导模块、响应调节模块和放大模块，
    所述光电导模块、响应调节模块、放大模块依次电连接；
    所述光电导模块用于同时接收外部的飞秒激光和太赫兹波，并形成所述太赫兹波信号的电位差；
    所述放大模块用于接收和放大所述太赫兹波信号；
    所述响应调节模块用于调节所述光电导模块与所述放大模块之间的信噪比。
  2. 根据权利要求1所述的太赫兹探测装置，其特征在于，所述光电导模块包括依次层叠的衬底层、光电导层、光电导栅极以及设置在所述光电导栅极上的双极型偶极天线；
    所述双极型偶极天线包括正极偶极天线和负极偶极天线；
    所述响应调节模块分别与所述正极偶极天线、负极偶极天线连接。
  3. 根据权利要求2所述的太赫兹探测装置，其特征在于，所述响应调节模块包括第一电阻和第一电容；所述第一电阻与第一电容并联；
    所述第一电阻的一端与所述正极偶极天线连接，所述第一电阻的另一端与所述负极偶极天线连接。
  4. 根据权利要求2所述的太赫兹探测装置，其特征在于，所述第一电阻的阻值与所述双极型偶极天线的等效电阻相等。
  5. 根据权利要求2所述的太赫兹探测装置，其特征在于，所述放大模块包括第一级放大电路、第二级放大电路和第三级放大电路；
    所述第一级放大电路、第二级放大电路、第三级放大电路依次电连接；
    所述第一级放大电路用于对所述太赫兹波信号进行放大；
    所述第二级放大电路用于调节所述太赫兹波信号的放大增益；
    所述第三级放大电路用于降低所述太赫兹探测装置的输出阻抗。
  6. 根据权利要求5所述的太赫兹探测装置，其特征在于，所述第一级放大电路包括第一耦合电阻和仪表放大器；
    所述第一耦合电阻的两端分别与所述正极偶极天线、负极偶极天线连接；
    所述仪表放大器的同相输入端与所述正极偶极天线连接，所述仪表放大器的反相输入端与所述负极偶极天线连接；所述仪表放大器的输出端与所述第二级放大电路连接。
  7. 根据权利要求5所述的太赫兹探测装置，其特征在于，所述第一级放大电路还包括第二电阻和第三电阻，且所述第二电阻与第三电阻的阻值相等；
    所述第二电阻的一端与所述正极偶极天线连接，所述第二电阻的另一端接地；所述第三电阻的一端与所述负极偶极天线连接，所述第三电阻的另一端接地。
  8. 根据权利要求5所述的太赫兹探测装置，其特征在于，所述第二级放大电路包括第二耦合电阻、第一运算放大器、数字电位器和偏置电压分压器；
    所述第一运算放大器的反相输入端经所述第二耦合电阻与所述第一级放大电路的输出端连接；所述第一运算放大器的同相输入端与所述偏置电压分压器连接；
    所述数字电位器连接在所述第一运算放大器的反相输入端与输出端之间；
    所述第一运算放大器的输出端与所述第三级放大电路连接。
  9. 根据权利要求8所述的太赫兹探测装置，其特征在于，所述偏置电压分压器包括第四电阻、第五电阻和第六电阻；
    所述第四电阻、第五电阻和第六电阻与外部供电电源依次串联形成回路，且所述第五电阻为滑动变阻器，
    所述第一运算放大器的同相输入端与所述第五电阻连接。
  10. 根据权利要求5所述的太赫兹探测装置，其特征在于，所述第三级放大电路包括第三耦合电阻和电压跟随器；
    所述电压跟随器的同相输入端经所述第三耦合电阻与所述第二级放大电路的输出端连接，所述电压跟随器的负向输入端与所述电压跟随器的输出端连接。
PCT/CN2016/094678 2016-06-28 2016-08-11 太赫兹探测装置 WO2018000531A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201610495284.5A CN105938012B (zh) 2016-06-28 2016-06-28 太赫兹探测装置
CN201610495284.5 2016-06-28

Publications (1)

Publication Number Publication Date
WO2018000531A1 true WO2018000531A1 (zh) 2018-01-04

Family

ID=56873372

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2016/094678 WO2018000531A1 (zh) 2016-06-28 2016-08-11 太赫兹探测装置

Country Status (2)

Country Link
CN (1) CN105938012B (zh)
WO (1) WO2018000531A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109541712B (zh) * 2018-11-30 2020-07-28 天津大学 基于周期性光栅化栅极金属栅mosfet太赫兹探测器
CN113551770B (zh) * 2021-07-23 2023-12-29 中国科学院半导体研究所 一种太赫兹波幅相读出装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5729017A (en) * 1996-05-31 1998-03-17 Lucent Technologies Inc. Terahertz generators and detectors
WO2007006552A1 (de) * 2005-07-12 2007-01-18 Technische Universität Braunschweig Thz-sender und thz-empfänger
CN101253403A (zh) * 2005-08-30 2008-08-27 佳能株式会社 感测设备
CN101464608A (zh) * 2007-12-20 2009-06-24 Ncr公司 光导器件

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN200969566Y (zh) * 2006-11-28 2007-10-31 厦门大学 表面光伏谱前置放大器
US7973605B2 (en) * 2008-09-15 2011-07-05 Mediatek Singapore Pte. Ltd. Three-stage frequency-compensated operational amplifier for driving large capacitive loads
JP5489906B2 (ja) * 2010-08-05 2014-05-14 キヤノン株式会社 テラヘルツ波トランシーバ及び断層像取得装置
CN203689051U (zh) * 2013-11-20 2014-07-02 浙江迪元仪表有限公司 适用于二线制电磁流量计的新型励磁控制电路
CN103913240B (zh) * 2014-04-11 2017-01-11 电子科技大学 一种电流型太赫兹热释电探测器读出电路
CN205940760U (zh) * 2016-06-28 2017-02-08 深圳市太赫兹系统设备有限公司 太赫兹探测装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5729017A (en) * 1996-05-31 1998-03-17 Lucent Technologies Inc. Terahertz generators and detectors
WO2007006552A1 (de) * 2005-07-12 2007-01-18 Technische Universität Braunschweig Thz-sender und thz-empfänger
CN101253403A (zh) * 2005-08-30 2008-08-27 佳能株式会社 感测设备
CN101464608A (zh) * 2007-12-20 2009-06-24 Ncr公司 光导器件

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
HUANG, ZHANHUA ET AL.: "Programmable Lock-in Amplifier Technology for THz-TDS", OPTO- ELECTRONIC ENGINEERING, vol. 42, no. 7, 31 July 2015 (2015-07-31), ISSN: 1003-501X *

Also Published As

Publication number Publication date
CN105938012B (zh) 2018-03-27
CN105938012A (zh) 2016-09-14

Similar Documents

Publication Publication Date Title
US10187026B2 (en) Transmipedance amplifier circuit, related integrated circuit, receiver circuit and method of operating a transimpedance amplifier circuit
US20070090276A1 (en) Light detecting device
CN103760943B (zh) 一种应用于ldo的摆率增强电路
WO2018000531A1 (zh) 太赫兹探测装置
CN205067735U (zh) 一种激光探测信号处理电路
EP3410600B1 (en) Amplifier arrangement and sensor arrangement with such amplifier arrangement
US6573762B1 (en) Analog pulse processor
CN205940760U (zh) 太赫兹探测装置
US11114991B2 (en) Analog front-end circuit for conditioning a sensor signal
Parvizi et al. An ultra low power, low voltage CMOS squarer circuit for non-coherent IR-UWB receivers
WO2019233033A1 (zh) 一种太赫兹时域光谱数据采集系统
CN111106867A (zh) 一种适用于连续变量量子随机数产生的探测模块
US7911278B1 (en) Biased low differential input impedance current receiver/converter device and method for low noise readout from voltage-controlled detectors
EP3715803A1 (en) Optical detection circuit
CN110332993A (zh) 一种高速可调时域脉冲型平衡零差探测器及其数据采集方法
CN106018926B (zh) 一种微电流检测电路
CN220583602U (zh) 一种可精密调零的平衡光电探测器
WO2022048438A1 (zh) 一种功率检波电路以及集成芯片
US20230358903A1 (en) Shaper circuit, photon counting circuit and x-ray apparatus
Najmurrokhman et al. Development of high sensitivity amplifier for VLF receiver application
Wu et al. A high-speed single-photon detection scheme based on frequency domain filtering
CN213186050U (zh) 一种微弱光信号放大电路
CN116106522B (zh) 血液分析装置
Zhu et al. Research and design of photoelectric converter for quantum gravimeter
Kholili et al. A low-power and high-gain frontend for GHz application using trans-impedance amplifier for fast particle detection

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 16906928

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 16906928

Country of ref document: EP

Kind code of ref document: A1