WO2017215103A1 - Transceiver of ka-band very small aperture terminal - Google Patents
Transceiver of ka-band very small aperture terminal Download PDFInfo
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- WO2017215103A1 WO2017215103A1 PCT/CN2016/094685 CN2016094685W WO2017215103A1 WO 2017215103 A1 WO2017215103 A1 WO 2017215103A1 CN 2016094685 W CN2016094685 W CN 2016094685W WO 2017215103 A1 WO2017215103 A1 WO 2017215103A1
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- conversion module
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B7/00—Radio transmission systems, i.e. using radiation field
- H04B7/14—Relay systems
- H04B7/15—Active relay systems
- H04B7/185—Space-based or airborne stations; Stations for satellite systems
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B7/00—Radio transmission systems, i.e. using radiation field
- H04B7/14—Relay systems
- H04B7/15—Active relay systems
- H04B7/185—Space-based or airborne stations; Stations for satellite systems
- H04B7/18528—Satellite systems for providing two-way communications service to a network of fixed stations, i.e. fixed satellite service or very small aperture terminal [VSAT] system
Definitions
- the invention relates to the field of Ka-band satellite communication technology, in particular to a Ka-band satellite small station transceiver.
- the main station In early satellite communications, major communication needs were primarily achieved through several primary stations.
- the main station is distributed to different areas by means of a wired connection, so the main station is mainly distributed in the urban area of the city.
- the wired connection of the primary station makes the architecture of the entire satellite communication system inconvenient and expensive.
- VSAT Very Small Aperture Terminal, satellite station
- the small satellite stations can be widely distributed in different areas, in addition to urban areas, and can also be distributed in mountainous areas.
- the VSAT satellite communication system can meet the different communication needs of Internet services, voice/fax services, and data services, and thus has been widely used.
- the VSAT satellite communication system typically includes a primary station 12, a satellite transponder 13 and satellite stations 11 distributed throughout the area.
- the satellite transponders 13 are typically distributed in geosynchronous orbits of 36,000 kilometers above the equator.
- the primary station 12 is the central communication and monitoring terminal in the entire VSAT satellite communication system and typically requires 24/7 operation.
- the primary station 12 controls and communicates with the satellite stations 11 by directly transmitting signals to satellite stations 11 distributed in different areas.
- the satellite station 11 includes an outdoor unit 15 and an indoor unit 14.
- the indoor unit 14 includes devices for interaction, such as a modem, a computer device, and the indoor unit 14 is connected to the outdoor unit 15 by wire.
- the outdoor unit 15 includes an antenna assembly 17, a transceiver 16, and other accessories.
- the antenna assembly 17 includes a reflector, a feed, a mounting base, and the like.
- the transceiver 16 includes an upconversion module (BUC, block) Up converter), down converter module (LNB, low noise block) and other transceiver components
- the demand for the Ka-band communication satellite market is increasing, and the Ka-band is mainly 26.5 to 40 GHz.
- the terrestrial terminal market will also achieve greater development, and the use of satellite terminals will reach a million-level level, so the pace of the global satellite industry entering the Ka era is accelerating.
- the transceiver is the communication core of the satellite station 11.
- Ka-band there are more stringent requirements for the processing of PCB boards in transceivers. Therefore, how to improve the performance of the transceiver and reduce the cost is a key step for the transceiver product to be commercialized.
- the up-conversion module and the down-conversion module both include more functional chips and transistors, and the functional chips and transistors are separately arranged on the corresponding PCB circuit boards, The discrete functional chips and transistors are connected by copper traces or microstrip lines. Therefore, the traditional Ka-band satellite station transceiver occupies a large area, so that the size of the entire product cannot be reduced.
- a Ka-band satellite small station transceiver includes an up-conversion module and a down-conversion module, and the up-conversion module and the down-conversion module are connected between the modem and the antenna assembly;
- the up-conversion module is configured to up-convert a signal sent by the modem, and send the up-converted signal to the antenna component; the down-conversion module is configured to perform a signal sent by the antenna component Frequency conversion, and the down-converted signal is sent to the modem; at the same time, the up-conversion module or the down-conversion module includes a plurality of SIP chips manufactured by using system-level packaging technology, and each of the SIP chips is integrated with a plurality of electrical properties. Functional chips that are connected and fabricated using a semiconductor process.
- the up-conversion module includes a first SIP chip, and the first SIP chip is integrated with a first local oscillator signal generator and a first local oscillator signal amplifier.
- the up-conversion module further includes a connected second SIP chip and a third SIP chip;
- the second SIP chip is integrated with a first amplifier and a first mixer, and the first mixer is used to connect the modem;
- the third SIP chip is integrated with a second amplifier and a third amplifier.
- the up-conversion module further includes a microstrip line filter and a first power amplifier; the microstrip line filter is coupled between the first SIP chip and the second SIP chip; The third SIP chip is also coupled to the first power amplifier; the first power amplifier is further configured to connect the antenna assembly.
- the down conversion module includes a fourth SIP chip; the fourth SIP chip is integrated with a second local oscillator signal generator and a second local oscillator signal amplifier.
- the down conversion module further includes a fifth SIP chip and a sixth SIP chip that are connected;
- the fifth SIP chip is integrated with a plurality of stages of amplifiers, and the fifth SIP chip is further configured to connect the antenna components; the sixth SIP chip is integrated with a plurality of stages of filters.
- the down conversion module further includes a local oscillator signal filter, a second mixer, a mixed signal filter, and a second power amplifier;
- the local oscillator signal filter is connected between the fourth SIP chip and the second mixer; the second mixer is further connected to the sixth SIP chip and the mixed signal filter respectively Connected; the mixing signal filter is also coupled to the second power amplifier; the second power amplifier is further configured to connect to the modem.
- the SIP chip includes a substrate, and each of the functional chips is integrated on the substrate in a stacked or side-by-side manner.
- each of the SIP chips is mounted on a PCB board corresponding to the up-conversion module or the down-conversion module by a surface mount technology.
- the up-conversion module and the down-conversion module are mounted together on the same PCB board.
- the up-conversion module or the down-conversion module includes a plurality of SIP chips manufactured by system-level packaging technology, and each SIP chip is integrated A number of functional chips that are electrically connected and fabricated using a semiconductor process. Therefore, the Ka-band satellite station transceiver utilizes system-level packaging technology to greatly reduce the number of chips, and also reduces the number of copper traces or microstrip lines between chips, thereby reducing the transmission and reception of the entire Ka-band satellite station. The occupied area of the machine facilitates the miniaturization of the product.
- Figure 1 is a schematic diagram showing the structure of a VSAT satellite communication system
- FIG. 2 is a schematic diagram showing the structure of a satellite station in the VSAT satellite communication system shown in FIG. 1;
- FIG. 3 is a schematic structural diagram of a related structure of a Ka-band satellite small station transceiver according to an embodiment
- FIG. 4 is a schematic diagram showing the electrical connection structure of the up-conversion module in the Ka-band satellite station transceiver of the embodiment shown in FIG. 3;
- FIG. 5 is a schematic diagram showing the electrical connection structure of a down conversion module in a Ka-band satellite station transceiver of the embodiment shown in FIG. 3;
- FIG. 6 is a schematic diagram of a SIP chip package structure in a Ka-band satellite small station transceiver of the embodiment shown in FIG. 3.
- FIG. 6 is a schematic diagram of a SIP chip package structure in a Ka-band satellite small station transceiver of the embodiment shown in FIG. 3.
- An embodiment provides a Ka-band satellite station transceiver, as shown in FIG. 3, including an up-conversion module 100 and a down-conversion module 200.
- the up-conversion module 100 and the down-conversion module 200 are both connected between the modem 300 and the antenna assembly 400.
- the antenna assembly 400 includes an antenna, a feed, and the like for transmitting or receiving a Ka-band high frequency signal.
- the Ka-band satellite station transceiver includes at least the up-conversion module 100 and the down-conversion module 200, and may also include other structures, such as a quadrature-mode converter.
- the up-conversion module 100 is configured to upconvert the signal transmitted by the modem 300 and transmit the up-converted signal to the antenna assembly 400.
- the signal sent by the modem 300 is usually an intermediate frequency signal, and after being passed through the up-conversion module 100, the intermediate frequency signal is up-converted into a Ka-band high-frequency transmission signal, and finally transmitted through the antenna assembly 400.
- the down conversion module 200 is configured to downconvert the signal transmitted by the antenna assembly 400 and transmit the downconverted signal to the modem 300.
- the signal sent by the antenna assembly 400 to the down-conversion module 200 is a Ka-band high-frequency received signal, and the Ka-band high-frequency received signal is down-converted to the intermediate frequency signal by the down-conversion module 200 and finally enters the modem 300 for subsequent Demodulation and other corresponding processing.
- the up-conversion module 100 or the down-conversion module 200 includes a plurality of SIP (System In) manufactured by system-level packaging technology.
- a Package system level package) chip SIP (System In) manufactured by system-level packaging technology.
- System-in-package technology refers to the integration of multiple functional chips into one package to achieve a substantially complete function, namely the SIP chip.
- each SIP chip integrates a plurality of functional chips which are electrically connected and both are manufactured by a semiconductor process.
- a semiconductor process refers to a technology in which a semiconductor is used as a component and an integrated circuit, such as a silicon germanium process.
- the function chip refers to each functional chip that is discretely arranged in the conventional up-conversion module or the down-conversion module, such as a filter, a mixer, and the like.
- the SIP chip packages the die corresponding to different functional chips through system-level packaging technology, thereby forming a corresponding SIP chip.
- the functional chips packaged together are electrically connected and the manufacturing process is the same (that is, both are fabricated by a semiconductor process), it is easy to implement in process manufacturing.
- the different functional chips in the upper conversion module 100 or the down conversion module 200 that are electrically connected and manufactured in the semiconductor manufacturing process are packaged together, thereby reducing the number of chips and reducing the number of chips.
- the number of copper traces or microstrip lines between the chips reduces the footprint of the entire Ka-band satellite station transceiver, reduces the cost of components, facilitates miniaturization of the product, and simplifies the high frequency band. Construction and commissioning.
- the up-conversion module 100 includes three SIP chips, namely, a first SIP chip 110, a second SIP chip 120, and a third SIP chip 130. At the same time, the up-conversion module 100 further includes a microstrip line filter 140 and a first power amplifier 150. Upconversion module 100 also includes other devices 306, such as peripheral devices, matching devices, and the like.
- the second SIP chip 120 is connected to the third SIP chip 130.
- the microstrip line filter 140 is connected between the first SIP chip 110 and the second SIP chip 120.
- the third SIP chip 130 is also connected to the first power amplifier 150.
- the first power amplifier 150 is also used to connect the antenna assembly 400.
- the first SIP chip 110 is configured to generate and amplify a first local oscillator signal corresponding to the up-conversion.
- the first SIP chip 110 integrates two functional chips, a first local oscillator signal generator 111 and a first local oscillator signal amplifier 112, which are electrically connected.
- the first local oscillator signal generator 111 is configured to generate a first local oscillator signal and transmit it to the first local oscillator amplifier 112.
- the first local oscillator signal amplifier 112 is configured to amplify the first local oscillator signal and transmit the amplified first local oscillator signal to the microstrip line filter 140.
- the microstrip line filter 140 is configured to filter the amplified first local oscillation signal and send the filtered first local oscillation signal to the second SIP chip 120.
- the microstrip line filter 140 is a band pass filter, and the microstrip line filter 140 is formed by a copper plating or a copper plating and a silver plating process, and has a thickness of 17 ⁇ m to 34 ⁇ m.
- the immersion silver can prevent oxidation of copper, thereby improving the reliability of the microstrip line filter 140.
- the microstrip line filter 140 is different from the manufacturing process of the first local oscillation signal generator 111 and the first local oscillation signal amplifier 112, the microstrip line filter 140 is individually set to one stage in this embodiment.
- the second SIP chip 120 is configured to implement a mixing function to upconvert the intermediate frequency signal transmitted by the modem 300 into a Ka-band high frequency signal.
- the second SIP chip 120 is integrated with two functional chips, a first amplifier 121 and a first mixer 122 that are electrically connected.
- the first amplifier 121 is connected to the microstrip line filter 140, and the first amplifier 121 is configured to amplify the first local oscillation signal filtered by the microstrip line filter 140.
- the first mixer 121 is configured to connect to the modem 300, and the first mixer 121 is configured to mix the first local oscillator signal amplified by the first amplifier 121 with the intermediate frequency signal transmitted from the modem 300, thereby obtaining a Ka. Band high frequency signal.
- the Ka-band high frequency signal is transmitted through the microstrip line and transmitted to the third SIP chip 130.
- the microstrip patch antenna 170 is used to transmit and receive high frequency signals.
- the Ka-band high-frequency signal output by the second SIP chip 120 is transmitted to the third SIP chip 130 through the microstrip patch antenna 170.
- the third SIP chip 130 is configured to amplify the Ka-band high-frequency signal, and the third SIP chip 130 is integrated with the two functional chips of the second amplifier 131 and the third amplifier 132 that are electrically connected.
- the second amplifier 131 is a low noise amplifier.
- the third amplifier 132 is a variable gain amplifier.
- a corresponding matching circuit is further included in the third SIP chip 130 to achieve the effect of impedance matching. Therefore, after the Ka-band high-frequency signal passes through the third SIP chip 130, a corresponding multi-stage amplification process is performed, and is transmitted to the first power amplifier 150 through the microstrip patch antenna 170.
- the first power amplifier 150 is configured to perform power amplification so that the amplified Ka-band high-frequency signal sent by the third SIP chip 130 generates sufficient power to be wirelessly transmitted. Since the first power amplifier 150 has a high power characteristic, significant heat generation is generated, so the first power amplifier 150 is individually set to one stage in this embodiment.
- the functional modules of the conventional up-conversion modules are arranged in an electrical connection relationship by the first SIP chip 110, the second SIP chip 120, and the third SIP chip 130.
- the process is packaged accordingly, thereby reducing the number of chips in the entire upconversion module 100 and the number of copper traces or microstrip lines between the chips.
- the structure of the up-conversion module 100 is not limited to the above one, as long as the miniaturization requirement of the product can be satisfied.
- the second SIP chip 120 may be integrated with each functional chip in the third SIP chip 130; other stages of amplifiers may be integrated into the third SIP chip 130.
- the down conversion module 200 includes a fourth SIP chip 210, a fifth SIP chip 220, a sixth SIP chip 230, a local oscillator signal filter 240, a second mixer 250, and a mixed signal filter.
- the fifth SIP chip 220 is connected to the sixth SIP chip 230.
- the fifth SIP chip 220 is also used to connect the antenna assembly 400.
- the local oscillator signal filter 240 is connected between the fourth SIP chip 210 and the second mixer 250.
- the second mixer 250 is also connected to the sixth SIP chip 230 and the mixed signal filter 260, respectively.
- the mixing signal filter 260 is also coupled to a second power amplifier 270.
- the second power amplifier 270 is also used to connect to the modem 300.
- the fourth SIP chip 210 is configured to generate and amplify a second local oscillation signal corresponding to the down conversion. At the same time, the fourth SIP chip 210 integrates two functional chips of the second local oscillator signal generator 211 and the second local oscillator signal amplifier 212 that are electrically connected.
- the second local oscillator signal generator 211 is configured to generate a second local oscillator signal corresponding to the down-conversion and send the signal to the second local oscillator amplifier 212.
- the second local oscillator signal amplifier 212 is a low noise amplifier for amplifying the second local oscillator signal and transmitting the amplified second local oscillator signal to the local oscillator signal filter 240.
- the local oscillator signal filter 240 transmits the filtered second local oscillator signal to the second mixer 250.
- the fifth SIP chip 220 is integrated with a plurality of stages of amplifiers and is used to amplify the Ka-band received signals transmitted by the antenna assembly 400. Specifically, the fifth SIP chip 220 is integrated with a three-stage low noise amplifier to improve the signal to noise ratio of the signal. At the same time, the fifth SIP chip 220 receives the Ka band reception signal through the patch antenna 280.
- the sixth SIP chip 230 is integrated with a plurality of stages of filters, and is configured to filter the amplified Ka-band received signal sent by the fifth SIP chip 220, and then send the filtered Ka-band received signal to the second mixer 250. Specifically, the sixth SIP chip 230 is integrated with three filters.
- the second mixer 250 is configured to mix the filtered second local oscillator signal with the filtered Ka-band received signal to form a corresponding intermediate frequency signal, and send the signal to the mixing signal filter 260.
- the mixing signal filter 260 filters the intermediate frequency signal and transmits the filtered intermediate frequency signal to the second power amplifier 270.
- the second power amplifier 270 is for performing power amplification and will transmit the amplified intermediate frequency signal to the modem 300.
- the discrete functional modules in the conventional down conversion module are electrically connected and processed according to the fourth SIP chip 210, the fifth SIP chip 220, and the sixth SIP chip 230. Packaged together, thereby reducing the number of chips in the entire downconversion module 200 and the number of copper traces or microstrip lines between the chips.
- the structure of the down conversion module 200 is not limited to the above one, as long as the miniaturization requirement of the product can be satisfied.
- each of the foregoing SIP chips (including the first SIP chip 110, the second SIP chip 120, the third SIP chip 130, the fourth SIP chip 210, the fifth SIP chip 220, and the sixth SIP chip 230)
- the specific package structure principle is as follows.
- Each SIP chip includes a substrate 510, and the functional chips within the SIP chip are integrated on the substrate 510 in a stacked or side-by-side manner.
- the function chip 520 and the function chip 530 are integrated on the substrate 510 in a stacked manner, and this laminated structure can further reduce the area of the entire SIP chip.
- the functional chips that are not suitable for being stacked together are integrated on the substrate 510 in a side-by-side manner.
- the functional chip 560 is integrated on the substrate 510 in a side-by-side manner with respect to the functional chip 520 and the functional chip 530.
- the functional chip leads the leads through a bonding process to achieve electrical connection.
- Other components 550 are also integrated on substrate 510, such as matched resistors, capacitors, or microstrip lines.
- the package structure of the SIP chip is not limited to the above one case, as long as the corresponding function chips can be packaged together.
- each SIP chip is mounted on the PCB board corresponding to the up-conversion module 100 or the down-conversion module 200 by surface mount technology, thereby further reducing the volume of the Ka-band satellite station transceiver.
- the PCB board after the installation is placed in the waveguide cavity housing, which has the functions of waveguide, heat dissipation and support.
- the up-conversion module 100 and the down-conversion module 200 are installed together on the same PCB board. At this time, the up-conversion module 100 and the down-conversion module 200 can share the local oscillator signal generator, thereby further reducing the number of chips, reducing the size of the product, and saving component costs.
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Abstract
The present invention relates to a transceiver of a Ka-band very small aperture terminal, comprising an up-converter module and a down-converter module. Both the up-converter module and the down-converter module are connected between a modem and an antenna assembly. The up-converter module is used for carrying out up-conversion to signals sent by the modem and sending the signals after the up-conversion to the antenna assembly. The down-converter module is used for carrying out down-conversion to signals sent by the antenna assembly and sending the signals after the down-conversion to the modem. The up-converter module or the down-converter module comprises several System In a Package (SIP) chips produced by the SIP technology. Each SIP chip is integrated with several functional chips which are electrically connected and are produced using a semiconductor technique. By means of the transceiver of the Ka-band very small aperture terminal, the number of chips is greatly reduced using the SIP technology, the number of copper wires or microstrip lines among the chips is also reduced, and thus the occupied area of the transceiver of the Ka-band very small aperture terminal is reduced, thereby facilitating realizing miniaturization design of products.
Description
【技术领域】[Technical Field]
本发明涉及Ka波段卫星通信技术领域,特别是涉及一种Ka波段卫星小站收发机。The invention relates to the field of Ka-band satellite communication technology, in particular to a Ka-band satellite small station transceiver.
【背景技术】【Background technique】
在早期的卫星通信中,主要通过若干主站完成主要的通信需求。主站通过有线连接的方式分发到不同的地区,故主站主要分布在城市的市区。主站的有线连接方式使得整个卫星通信系统的架构构建即为不便且价格昂贵。In early satellite communications, major communication needs were primarily achieved through several primary stations. The main station is distributed to different areas by means of a wired connection, so the main station is mainly distributed in the urban area of the city. The wired connection of the primary station makes the architecture of the entire satellite communication system inconvenient and expensive.
VSAT(Very Small Aperture
Terminal,卫星小站)卫星通信系统能够克服上述问题。在VSAT卫星通信系统中,卫星小站(VSAT)能够广泛地分布在不同的区域,除了在城市市区,还能够分布于山区等。同时,VSAT卫星通信系统能够满足互联网服务、语音/传真服务、数据业务等不同通信需求,从而得到了越来越广泛的应用。VSAT (Very Small Aperture
Terminal, satellite station) satellite communication system can overcome the above problems. In the VSAT satellite communication system, the small satellite stations (VSATs) can be widely distributed in different areas, in addition to urban areas, and can also be distributed in mountainous areas. At the same time, the VSAT satellite communication system can meet the different communication needs of Internet services, voice/fax services, and data services, and thus has been widely used.
如图1所示,VSAT卫星通信系统通常包括一个主站12、卫星转发器13及分布在各个区域的卫星小站11。卫星转发器13通常分布在赤道上方36000千米的地球同步轨道上。主站12是整个VSAT卫星通信系统中的中央通信和监控终端,通常需要全天候工作。主站12通过直接发送信号到分布在不同区域的卫星小站11来控制并与各卫星小站11进行通信。如图2所示,卫星小站11包括一个室外单元15和一个室内单元14。其中,室内单元14包含用来交互的设备,例如调制解调器、计算机设备,且室内单元14通过有线方式连接室外单元15。室外单元15包括天线组件17、收发机16以及其他配件。天线组件17中包括反射器、馈源、安装底座等。收发机16包含上变频模块(BUC,block
up converter)、下变频模块(LNB,low noise block)以及其他收发组件部分。As shown in Figure 1, the VSAT satellite communication system typically includes a primary station 12, a satellite transponder 13 and satellite stations 11 distributed throughout the area. The satellite transponders 13 are typically distributed in geosynchronous orbits of 36,000 kilometers above the equator. The primary station 12 is the central communication and monitoring terminal in the entire VSAT satellite communication system and typically requires 24/7 operation. The primary station 12 controls and communicates with the satellite stations 11 by directly transmitting signals to satellite stations 11 distributed in different areas. As shown in FIG. 2, the satellite station 11 includes an outdoor unit 15 and an indoor unit 14. The indoor unit 14 includes devices for interaction, such as a modem, a computer device, and the indoor unit 14 is connected to the outdoor unit 15 by wire. The outdoor unit 15 includes an antenna assembly 17, a transceiver 16, and other accessories. The antenna assembly 17 includes a reflector, a feed, a mounting base, and the like. The transceiver 16 includes an upconversion module (BUC, block)
Up converter), down converter module (LNB, low noise block) and other transceiver components.
另外,基于可用带宽传输容量大的优势和市场需求,Ka波段通信卫星市场的需求越来越大,Ka波段主要为26.5~40GHz。据统计,全球三十余家卫星运营商中,已经启动或者正在启动Ka波段卫星项目的有二十余家。相应地,地面终端市场也将取得较大发展,卫星终端使用量将达到百万部级别,因此全球卫星行业进入Ka时代的步伐在加快。而在VSAT卫星通信系统中,收发机是卫星小站11的通信核心部分。对于波长更短的Ka波段来说,收发机中PCB电路板的加工工艺则有更严格的要求。因此,如何提高收发机的性能并且减少成本是收发机产品面向商业化的关键一步。In addition, based on the advantages of large bandwidth transmission capacity and market demand, the demand for the Ka-band communication satellite market is increasing, and the Ka-band is mainly 26.5 to 40 GHz. According to statistics, among the more than 30 satellite operators in the world, there are more than 20 Ka-band satellite projects that have started or are starting. Correspondingly, the terrestrial terminal market will also achieve greater development, and the use of satellite terminals will reach a million-level level, so the pace of the global satellite industry entering the Ka era is accelerating. In the VSAT satellite communication system, the transceiver is the communication core of the satellite station 11. For the shorter wavelength Ka-band, there are more stringent requirements for the processing of PCB boards in transceivers. Therefore, how to improve the performance of the transceiver and reduce the cost is a key step for the transceiver product to be commercialized.
然而,在传统的Ka波段卫星小站收发机中,上变频模块、下变频模块均包括较多的功能芯片以及晶体管,且这些功能芯片和晶体管均分立排布于对应的PCB电路板上,各分立的功能芯片和晶体管之间通过铜走线或者微带线连接。因此,传统的Ka波段卫星小站收发机占用的面积较大,使得整个产品的尺寸无法缩小。However, in the conventional Ka-band satellite station transceiver, the up-conversion module and the down-conversion module both include more functional chips and transistors, and the functional chips and transistors are separately arranged on the corresponding PCB circuit boards, The discrete functional chips and transistors are connected by copper traces or microstrip lines. Therefore, the traditional Ka-band satellite station transceiver occupies a large area, so that the size of the entire product cannot be reduced.
【发明内容】 [Summary of the Invention]
基于此,有必要针对传统的Ka波段卫星小站收发机占用面积较大的问题,提供一种Ka波段卫星小站收发机。Based on this, it is necessary to provide a Ka-band satellite small station transceiver for the problem that the traditional Ka-band satellite small station transceiver has a large occupied area.
一种Ka波段卫星小站收发机,包括上变频模块和下变频模块,所述上变频模块、下变频模块均连接于调制解调器与天线组件之间;A Ka-band satellite small station transceiver includes an up-conversion module and a down-conversion module, and the up-conversion module and the down-conversion module are connected between the modem and the antenna assembly;
所述上变频模块用于对所述调制解调器发送的信号进行上变频,并将上变频处理后的信号发送至所述天线组件;所述下变频模块用于对所述天线组件发送的信号进行下变频,并将下变频处理后的信号发送至所述调制解调器;同时,所述上变频模块或下变频模块包括若干利用系统级封装技术制造的SIP芯片,且各所述SIP芯片集成有若干电性连接且均采用半导体工艺制造的功能芯片。The up-conversion module is configured to up-convert a signal sent by the modem, and send the up-converted signal to the antenna component; the down-conversion module is configured to perform a signal sent by the antenna component Frequency conversion, and the down-converted signal is sent to the modem; at the same time, the up-conversion module or the down-conversion module includes a plurality of SIP chips manufactured by using system-level packaging technology, and each of the SIP chips is integrated with a plurality of electrical properties. Functional chips that are connected and fabricated using a semiconductor process.
在其中一个实施例中,所述上变频模块包括第一SIP芯片,且所述第一SIP芯片集成有第一本振信号发生器及第一本振信号放大器。In one embodiment, the up-conversion module includes a first SIP chip, and the first SIP chip is integrated with a first local oscillator signal generator and a first local oscillator signal amplifier.
在其中一个实施例中,所述上变频模块还包括相连接的第二SIP芯片及第三SIP芯片;In one embodiment, the up-conversion module further includes a connected second SIP chip and a third SIP chip;
所述第二SIP芯片集成有第一放大器及第一混频器,且所述第一混频器用于连接所述调制解调器;所述第三SIP芯片集成有第二放大器和第三放大器。The second SIP chip is integrated with a first amplifier and a first mixer, and the first mixer is used to connect the modem; the third SIP chip is integrated with a second amplifier and a third amplifier.
在其中一个实施例中,所述上变频模块还包括微带线滤波器及第一功率放大器;所述微带线滤波器连接于所述第一SIP芯片与第二SIP芯片之间;所述第三SIP芯片还与所述第一功率放大器连接;所述第一功率放大器还用于连接所述天线组件。In one embodiment, the up-conversion module further includes a microstrip line filter and a first power amplifier; the microstrip line filter is coupled between the first SIP chip and the second SIP chip; The third SIP chip is also coupled to the first power amplifier; the first power amplifier is further configured to connect the antenna assembly.
在其中一个实施例中,所述下变频模块包括第四SIP芯片;所述第四SIP芯片集成有第二本振信号发生器及第二本振信号放大器。In one embodiment, the down conversion module includes a fourth SIP chip; the fourth SIP chip is integrated with a second local oscillator signal generator and a second local oscillator signal amplifier.
在其中一个实施例中,所述下变频模块还包括相连接的第五SIP芯片及第六SIP芯片;In one embodiment, the down conversion module further includes a fifth SIP chip and a sixth SIP chip that are connected;
所述第五SIP芯片集成有若干级放大器,且所述第五SIP芯片还用于连接所述天线组件;所述第六SIP芯片集成有若干级滤波器。The fifth SIP chip is integrated with a plurality of stages of amplifiers, and the fifth SIP chip is further configured to connect the antenna components; the sixth SIP chip is integrated with a plurality of stages of filters.
在其中一个实施例中,所述下变频模块还包括本振信号滤波器、第二混频器、混频信号滤波器及第二功率放大器;In one embodiment, the down conversion module further includes a local oscillator signal filter, a second mixer, a mixed signal filter, and a second power amplifier;
所述本振信号滤波器连接于所述第四SIP芯片与所述第二混频器之间;所述第二混频器还分别与所述第六SIP芯片、所述混频信号滤波器连接;所述混频信号滤波器还与所述第二功率放大器连接;所述第二功率放大器还用于连接所述调制解调器。The local oscillator signal filter is connected between the fourth SIP chip and the second mixer; the second mixer is further connected to the sixth SIP chip and the mixed signal filter respectively Connected; the mixing signal filter is also coupled to the second power amplifier; the second power amplifier is further configured to connect to the modem.
在其中一个实施例中,所述SIP芯片包括衬底,且各所述功能芯片以层叠或并排的方式集成于所述衬底上。In one embodiment, the SIP chip includes a substrate, and each of the functional chips is integrated on the substrate in a stacked or side-by-side manner.
在其中一个实施例中,各所述SIP芯片通过表面贴装技术安装于所述上变频模块或下变频模块对应的PCB板。In one embodiment, each of the SIP chips is mounted on a PCB board corresponding to the up-conversion module or the down-conversion module by a surface mount technology.
在其中一个实施例中,所述上变频模块和下变频模块共同安装于同一块PCB板上。In one embodiment, the up-conversion module and the down-conversion module are mounted together on the same PCB board.
上述Ka波段卫星小站收发机具有的有益效果为:在该Ka波段卫星小站收发机中,上变频模块或下变频模块包括若干利用系统级封装技术制造的SIP芯片,且各SIP芯片集成有若干电性连接且均采用半导体工艺制造的功能芯片。因此,该Ka波段卫星小站收发机利用系统级封装技术使芯片数量大大减少,而且也减少了各芯片之间铜走线或者微带线的数量,从而减小了整个Ka波段卫星小站收发机的占用面积,便于实现产品的小型化设计。The above Ka-band satellite station transceiver has the beneficial effects that in the Ka-band satellite station transceiver, the up-conversion module or the down-conversion module includes a plurality of SIP chips manufactured by system-level packaging technology, and each SIP chip is integrated A number of functional chips that are electrically connected and fabricated using a semiconductor process. Therefore, the Ka-band satellite station transceiver utilizes system-level packaging technology to greatly reduce the number of chips, and also reduces the number of copper traces or microstrip lines between chips, thereby reducing the transmission and reception of the entire Ka-band satellite station. The occupied area of the machine facilitates the miniaturization of the product.
【附图说明】[Description of the Drawings]
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他实施例的附图。In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments or the description of the prior art will be briefly described below. Obviously, the drawings in the following description are only It is a certain embodiment of the present invention, and those skilled in the art can obtain drawings of other embodiments according to the drawings without any creative work.
图1为VSAT卫星通信系统的组成结构示意图;Figure 1 is a schematic diagram showing the structure of a VSAT satellite communication system;
图2为图1所示的VSAT卫星通信系统中卫星小站的组成结构示意图;2 is a schematic diagram showing the structure of a satellite station in the VSAT satellite communication system shown in FIG. 1;
图3为一实施例提供的Ka波段卫星小站收发机的相关组成结构示意图;3 is a schematic structural diagram of a related structure of a Ka-band satellite small station transceiver according to an embodiment;
图4为图3所示实施例的Ka波段卫星小站收发机中上变频模块的电气连接结构示意图;4 is a schematic diagram showing the electrical connection structure of the up-conversion module in the Ka-band satellite station transceiver of the embodiment shown in FIG. 3;
图5为图3所示实施例的Ka波段卫星小站收发机中下变频模块的电气连接结构示意图;5 is a schematic diagram showing the electrical connection structure of a down conversion module in a Ka-band satellite station transceiver of the embodiment shown in FIG. 3;
图6为图3所示实施例的Ka波段卫星小站收发机中的SIP芯片封装结构示意图。FIG. 6 is a schematic diagram of a SIP chip package structure in a Ka-band satellite small station transceiver of the embodiment shown in FIG. 3. FIG.
【具体实施方式】 【detailed description】
为了便于理解本发明,下面将参照相关附图对本发明进行更全面的描述。附图中给出了本发明的较佳实施例。但是,本发明可以以许多不同的形式来实现,并不限于本文所描述的实施例。相反地,提供这些实施例的目的是使对本发明的公开内容的理解更加透彻全面。In order to facilitate the understanding of the present invention, the present invention will be described more fully hereinafter with reference to the accompanying drawings. Preferred embodiments of the invention are shown in the drawings. However, the invention may be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the understanding of the present disclosure will be more fully understood.
除非另有定义,本文所使用的所有的技术和科学术语与属于发明的技术领域的技术人员通常理解的含义相同。本文中在发明的说明书中所使用的术语只是为了描述具体的实施例的目的,不是旨在限制本发明。本文所使用的术语“和/或”包括一个或多个相关的所列项目的任意的和所有的组合。Unless otherwise defined, all technical and scientific terms used herein have the same meaning meaning meaning The terminology used herein is for the purpose of describing the particular embodiments, The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
一实施例提供了一种Ka波段卫星小站收发机,如图3所示,包括上变频模块100和下变频模块200。上变频模块100、下变频模块200均连接于调制解调器300与天线组件400之间。天线组件400包括天线、馈源等结构,用于发射或接收Ka波段高频信号。需要说明的是,Ka波段卫星小站收发机至少包括上变频模块100和下变频模块200,还可以包括其他结构,例如正交模转换器。
An embodiment provides a Ka-band satellite station transceiver, as shown in FIG. 3, including an up-conversion module 100 and a down-conversion module 200. The up-conversion module 100 and the down-conversion module 200 are both connected between the modem 300 and the antenna assembly 400. The antenna assembly 400 includes an antenna, a feed, and the like for transmitting or receiving a Ka-band high frequency signal. It should be noted that the Ka-band satellite station transceiver includes at least the up-conversion module 100 and the down-conversion module 200, and may also include other structures, such as a quadrature-mode converter.
上变频模块100用于对调制解调器300发送的信号进行上变频,并将上变频处理后的信号发送至天线组件400。其中,调制解调器300发送的信号通常为中频信号,该中频信号经过上变频模块100后,被上变频为Ka波段高频发射信号,并最终通过天线组件400发射出去。The up-conversion module 100 is configured to upconvert the signal transmitted by the modem 300 and transmit the up-converted signal to the antenna assembly 400. The signal sent by the modem 300 is usually an intermediate frequency signal, and after being passed through the up-conversion module 100, the intermediate frequency signal is up-converted into a Ka-band high-frequency transmission signal, and finally transmitted through the antenna assembly 400.
下变频模块200用于对天线组件400发送的信号进行下变频,并将下变频处理后的信号发送至调制解调器300。其中,天线组件400发送至下变频模块200的信号为Ka波段高频接收信号,该Ka波段高频接收信号经过下变频模块200,被下变频为中频信号并最终进入调制解调器300中,以进行后续解调等相应处理过程。The down conversion module 200 is configured to downconvert the signal transmitted by the antenna assembly 400 and transmit the downconverted signal to the modem 300. The signal sent by the antenna assembly 400 to the down-conversion module 200 is a Ka-band high-frequency received signal, and the Ka-band high-frequency received signal is down-converted to the intermediate frequency signal by the down-conversion module 200 and finally enters the modem 300 for subsequent Demodulation and other corresponding processing.
在本实施例中,上变频模块100或下变频模块200包括若干利用系统级封装技术制造的SIP(System In
a
Package系统级封装)芯片。系统级封装技术是指将多种功能芯片集成在一个封装内,从而实现一个基本完整的功能,即SIP芯片。同时,各SIP芯片集成有若干电性连接且均采用半导体工艺制造的功能芯片。半导体工艺是指以半导体为材料,制作成组件及集成电路的技术,例如硅锗工艺。功能芯片是指传统上变频模块或下变频模块中分立排布的各功能芯片,例如滤波器、混频器等。In this embodiment, the up-conversion module 100 or the down-conversion module 200 includes a plurality of SIP (System In) manufactured by system-level packaging technology.
a
Package system level package) chip. System-in-package technology refers to the integration of multiple functional chips into one package to achieve a substantially complete function, namely the SIP chip. At the same time, each SIP chip integrates a plurality of functional chips which are electrically connected and both are manufactured by a semiconductor process. A semiconductor process refers to a technology in which a semiconductor is used as a component and an integrated circuit, such as a silicon germanium process. The function chip refers to each functional chip that is discretely arranged in the conventional up-conversion module or the down-conversion module, such as a filter, a mixer, and the like.
上述
SIP芯片在制造过程中,将不同功能芯片对应的裸片通过系统级封装技术封装在一起的,从而形成对应的SIP芯片。同时,由于封装在一起的各功能芯片电性连接且制造工艺相同(即均采用半导体工艺制造),因此在工艺制造方面便于实现。Above
In the manufacturing process, the SIP chip packages the die corresponding to different functional chips through system-level packaging technology, thereby forming a corresponding SIP chip. At the same time, since the functional chips packaged together are electrically connected and the manufacturing process is the same (that is, both are fabricated by a semiconductor process), it is easy to implement in process manufacturing.
综上所述,本实施例中,将上变频模块100或下变频模块200中电性连接且制造工艺均为半导体制造工艺的不同功能芯片封装在一起,减小了芯片的数量,同时也减少了各芯片之间铜走线或者微带线的数量,从而减小了整个Ka波段卫星小站收发机的占用面积,降低了元器件的成本,便于实现产品的小型化设计,简化了高频段的搭建以及调试。In summary, in the embodiment, the different functional chips in the upper conversion module 100 or the down conversion module 200 that are electrically connected and manufactured in the semiconductor manufacturing process are packaged together, thereby reducing the number of chips and reducing the number of chips. The number of copper traces or microstrip lines between the chips reduces the footprint of the entire Ka-band satellite station transceiver, reduces the cost of components, facilitates miniaturization of the product, and simplifies the high frequency band. Construction and commissioning.
具体的,如图4所示,上变频模块100共包括3个SIP芯片,即第一SIP芯片110、第二SIP芯片120及第三SIP芯片130。同时上变频模块100还包括微带线滤波器140及第一功率放大器150。上变频模块100还包括其他器件306,例如外围器件、匹配器件等。其中,第二SIP芯片120与第三SIP芯片130连接。微带线滤波器140连接于第一SIP芯片110与第二SIP芯片120之间。第三SIP芯片130还与第一功率放大器150连接。第一功率放大器150还用于连接天线组件400。Specifically, as shown in FIG. 4, the up-conversion module 100 includes three SIP chips, namely, a first SIP chip 110, a second SIP chip 120, and a third SIP chip 130. At the same time, the up-conversion module 100 further includes a microstrip line filter 140 and a first power amplifier 150. Upconversion module 100 also includes other devices 306, such as peripheral devices, matching devices, and the like. The second SIP chip 120 is connected to the third SIP chip 130. The microstrip line filter 140 is connected between the first SIP chip 110 and the second SIP chip 120. The third SIP chip 130 is also connected to the first power amplifier 150. The first power amplifier 150 is also used to connect the antenna assembly 400.
第一SIP芯片110,用于产生并放大上变频对应的第一本振信号。该第一SIP芯片110集成有电连接的第一本振信号发生器111及第一本振信号放大器112这两种功能芯片。第一本振信号发生器111用于产生第一本振信号,并发送至第一本振信号放大器112。第一本振信号放大器112用于将第一本振信号放大并将放大后的第一本振信号发送至微带线滤波器140中。The first SIP chip 110 is configured to generate and amplify a first local oscillator signal corresponding to the up-conversion. The first SIP chip 110 integrates two functional chips, a first local oscillator signal generator 111 and a first local oscillator signal amplifier 112, which are electrically connected. The first local oscillator signal generator 111 is configured to generate a first local oscillator signal and transmit it to the first local oscillator amplifier 112. The first local oscillator signal amplifier 112 is configured to amplify the first local oscillator signal and transmit the amplified first local oscillator signal to the microstrip line filter 140.
微带线滤波器140,用于将放大后的第一本振信号进行滤波,并将滤波后的第一本振信号发送至第二SIP芯片120。具体的,微带线滤波器140为带通滤波器,且微带线滤波器140通过镀铜或者镀铜加沉银工艺形成,厚度介于17μm~34μm。其中,沉银可以防止铜发生氧化,从而提高微带线滤波器140的可靠性。另外,由于微带线滤波器140与第一本振信号发生器111及第一本振信号放大器112的制造工艺不同,因此本实施例中将微带线滤波器140单独设为一级。The microstrip line filter 140 is configured to filter the amplified first local oscillation signal and send the filtered first local oscillation signal to the second SIP chip 120. Specifically, the microstrip line filter 140 is a band pass filter, and the microstrip line filter 140 is formed by a copper plating or a copper plating and a silver plating process, and has a thickness of 17 μm to 34 μm. Among them, the immersion silver can prevent oxidation of copper, thereby improving the reliability of the microstrip line filter 140. In addition, since the microstrip line filter 140 is different from the manufacturing process of the first local oscillation signal generator 111 and the first local oscillation signal amplifier 112, the microstrip line filter 140 is individually set to one stage in this embodiment.
第二SIP芯片120,用于实现混频功能,以将调制解调器300发送的中频信号上变频为Ka波段高频信号。第二SIP芯片120集成有电连接的第一放大器121及第一混频器122这两种功能芯片。其中,第一放大器121连接微带线滤波器140,且第一放大器121用于将微带线滤波器140滤波后的第一本振信号进行放大。第一混频器121用于连接调制解调器300,且第一混频器121用于将第一放大器121放大后的第一本振信号与调制解调器300传来的中频信号进行混频,从而得出Ka波段高频信号。该Ka波段高频信号通过微带线进行传输,并传输至第三SIP芯片130中。其中,微带贴片天线170用于发送和接收高频信号。本实施例中,第二SIP芯片120输出的Ka波段高频信号通过微带贴片天线170传输至第三SIP芯片130中。The second SIP chip 120 is configured to implement a mixing function to upconvert the intermediate frequency signal transmitted by the modem 300 into a Ka-band high frequency signal. The second SIP chip 120 is integrated with two functional chips, a first amplifier 121 and a first mixer 122 that are electrically connected. The first amplifier 121 is connected to the microstrip line filter 140, and the first amplifier 121 is configured to amplify the first local oscillation signal filtered by the microstrip line filter 140. The first mixer 121 is configured to connect to the modem 300, and the first mixer 121 is configured to mix the first local oscillator signal amplified by the first amplifier 121 with the intermediate frequency signal transmitted from the modem 300, thereby obtaining a Ka. Band high frequency signal. The Ka-band high frequency signal is transmitted through the microstrip line and transmitted to the third SIP chip 130. Among them, the microstrip patch antenna 170 is used to transmit and receive high frequency signals. In this embodiment, the Ka-band high-frequency signal output by the second SIP chip 120 is transmitted to the third SIP chip 130 through the microstrip patch antenna 170.
第三SIP芯片130,用于对Ka波段高频信号进行放大,且第三SIP芯片130集成有电连接的第二放大器131和第三放大器132这两种功能芯片。其中,第二放大器131为低噪声放大器。第三放大器132为可变增益放大器。另外,第三SIP芯片130中还包括相应的匹配电路,以达到阻抗匹配的效果。因此,Ka波段高频信号经过第三SIP芯片130后,进行了相应的多级放大过程,并通过微带贴片天线170传送至第一功率放大器150中。The third SIP chip 130 is configured to amplify the Ka-band high-frequency signal, and the third SIP chip 130 is integrated with the two functional chips of the second amplifier 131 and the third amplifier 132 that are electrically connected. The second amplifier 131 is a low noise amplifier. The third amplifier 132 is a variable gain amplifier. In addition, a corresponding matching circuit is further included in the third SIP chip 130 to achieve the effect of impedance matching. Therefore, after the Ka-band high-frequency signal passes through the third SIP chip 130, a corresponding multi-stage amplification process is performed, and is transmitted to the first power amplifier 150 through the microstrip patch antenna 170.
第一功率放大器150,用于进行功率放大,以使第三SIP芯片130发送的放大后的Ka波段高频信号产生足够的功率从而能够无线发射出去。由于第一功率放大器150具有大功率特性,会产生明显的发热,因此本实施例中将第一功率放大器150单独设为一级。The first power amplifier 150 is configured to perform power amplification so that the amplified Ka-band high-frequency signal sent by the third SIP chip 130 generates sufficient power to be wirelessly transmitted. Since the first power amplifier 150 has a high power characteristic, significant heat generation is generated, so the first power amplifier 150 is individually set to one stage in this embodiment.
因此,在本实施例提供的上变频模块100中,通过第一SIP芯片110、第二SIP芯片120及第三SIP芯片130,将传统上变频模块中分立排布的各功能芯片按照电气连接关系和工艺相应封装在一起,从而减少了整个上变频模块100中芯片的数量和各芯片之间铜走线或者微带线的数量。Therefore, in the up-conversion module 100 provided in this embodiment, the functional modules of the conventional up-conversion modules are arranged in an electrical connection relationship by the first SIP chip 110, the second SIP chip 120, and the third SIP chip 130. The process is packaged accordingly, thereby reducing the number of chips in the entire upconversion module 100 and the number of copper traces or microstrip lines between the chips.
可以理解的是,上变频模块100的结构不限于上述一种情况,只要能够满足产品的小型化要求即可。例如,在其他实施例中,还可以将第二SIP芯片120与第三SIP芯片130中的各功能芯片封装一体;第三SIP芯片130内也可集成有其他级数的放大器。It can be understood that the structure of the up-conversion module 100 is not limited to the above one, as long as the miniaturization requirement of the product can be satisfied. For example, in other embodiments, the second SIP chip 120 may be integrated with each functional chip in the third SIP chip 130; other stages of amplifiers may be integrated into the third SIP chip 130.
具体的,如图5所示,下变频模块200包括第四SIP芯片210、第五SIP芯片220、第六SIP芯片230、本振信号滤波器240、第二混频器250、混频信号滤波器260及第二功率放大器270。其中,第五SIP芯片220与第六SIP芯片230连接。第五SIP芯片220还用于连接天线组件400。本振信号滤波器240连接于第四SIP芯片210与第二混频器250之间。第二混频器250还分别与第六SIP芯片230、混频信号滤波器260连接。混频信号滤波器260还与第二功率放大器270连接。第二功率放大器270还用于连接调制解调器300。Specifically, as shown in FIG. 5, the down conversion module 200 includes a fourth SIP chip 210, a fifth SIP chip 220, a sixth SIP chip 230, a local oscillator signal filter 240, a second mixer 250, and a mixed signal filter. The device 260 and the second power amplifier 270. The fifth SIP chip 220 is connected to the sixth SIP chip 230. The fifth SIP chip 220 is also used to connect the antenna assembly 400. The local oscillator signal filter 240 is connected between the fourth SIP chip 210 and the second mixer 250. The second mixer 250 is also connected to the sixth SIP chip 230 and the mixed signal filter 260, respectively. The mixing signal filter 260 is also coupled to a second power amplifier 270. The second power amplifier 270 is also used to connect to the modem 300.
第四SIP芯片210,用于产生并放大下变频对应的第二本振信号。同时,第四SIP芯片210集成有电连接的第二本振信号发生器211及第二本振信号放大器212这两种功能芯片。其中,第二本振信号发生器211用于产生下变频对应的第二本振信号,并发送至第二本振信号放大器212中。第二本振信号放大器212为低噪声放大器,用于放大第二本振信号,并将放大后的第二本振信号发送至本振信号滤波器240中。本振信号滤波器240再将滤波后的第二本振信号发送至第二混频器250中。The fourth SIP chip 210 is configured to generate and amplify a second local oscillation signal corresponding to the down conversion. At the same time, the fourth SIP chip 210 integrates two functional chips of the second local oscillator signal generator 211 and the second local oscillator signal amplifier 212 that are electrically connected. The second local oscillator signal generator 211 is configured to generate a second local oscillator signal corresponding to the down-conversion and send the signal to the second local oscillator amplifier 212. The second local oscillator signal amplifier 212 is a low noise amplifier for amplifying the second local oscillator signal and transmitting the amplified second local oscillator signal to the local oscillator signal filter 240. The local oscillator signal filter 240 transmits the filtered second local oscillator signal to the second mixer 250.
第五SIP芯片220集成有若干级放大器、并用于对天线组件400发送的Ka波段接收信号进行放大。具体的,第五SIP芯片220集成有三级低噪声放大器,以提高信号的信噪比。同时第五SIP芯片220通过贴片天线280接收Ka波段接收信号。The fifth SIP chip 220 is integrated with a plurality of stages of amplifiers and is used to amplify the Ka-band received signals transmitted by the antenna assembly 400. Specifically, the fifth SIP chip 220 is integrated with a three-stage low noise amplifier to improve the signal to noise ratio of the signal. At the same time, the fifth SIP chip 220 receives the Ka band reception signal through the patch antenna 280.
第六SIP芯片230集成有若干级滤波器,并用于对第五SIP芯片220发送的放大后的Ka波段接收信号进行滤波,再将滤波后的Ka波段接收信号发送至第二混频器250。具体的,第六SIP芯片230集成有三个滤波器。The sixth SIP chip 230 is integrated with a plurality of stages of filters, and is configured to filter the amplified Ka-band received signal sent by the fifth SIP chip 220, and then send the filtered Ka-band received signal to the second mixer 250. Specifically, the sixth SIP chip 230 is integrated with three filters.
第二混频器250用于将滤波后的第二本振信号与滤波后的Ka波段接收信号进行混频,从而形成相应的中频信号,并发送至混频信号滤波器260。混频信号滤波器260对该中频信号进行滤波,并将滤波后的中频信号发送至第二功率放大器270中。第二功率放大器270用于进行功率放大,并将将放大后的中频信号发送至调制解调器300中。The second mixer 250 is configured to mix the filtered second local oscillator signal with the filtered Ka-band received signal to form a corresponding intermediate frequency signal, and send the signal to the mixing signal filter 260. The mixing signal filter 260 filters the intermediate frequency signal and transmits the filtered intermediate frequency signal to the second power amplifier 270. The second power amplifier 270 is for performing power amplification and will transmit the amplified intermediate frequency signal to the modem 300.
因此,在本实施例提供的下变频模块200中,通过第四SIP芯片210、第五SIP芯片220、第六SIP芯片230,将传统下变频模块中分立的各功能芯片按照电气连接关系和工艺相应封装在一起,从而减少了整个下变频模块200中芯片的数量和各芯片之间铜走线或者微带线的数量。Therefore, in the down conversion module 200 provided in this embodiment, the discrete functional modules in the conventional down conversion module are electrically connected and processed according to the fourth SIP chip 210, the fifth SIP chip 220, and the sixth SIP chip 230. Packaged together, thereby reducing the number of chips in the entire downconversion module 200 and the number of copper traces or microstrip lines between the chips.
可以理解的是,下变频模块200的结构不限于上述一种情况,只要能够满足产品的小型化要求即可。It can be understood that the structure of the down conversion module 200 is not limited to the above one, as long as the miniaturization requirement of the product can be satisfied.
具体的,如图6所示,上述各SIP芯片(包括第一SIP芯片110、第二SIP芯片120、第三SIP芯片130、第四SIP芯片210、第五SIP芯片220、第六SIP芯片230)的具体封装结构原理如下。Specifically, as shown in FIG. 6, each of the foregoing SIP chips (including the first SIP chip 110, the second SIP chip 120, the third SIP chip 130, the fourth SIP chip 210, the fifth SIP chip 220, and the sixth SIP chip 230) The specific package structure principle is as follows.
各SIP芯片均包括衬底510,且SIP芯片内的各功能芯片以层叠或并排的方式集成于衬底510上。例如,功能芯片520、功能芯片530以层叠的方式集成于衬底510上,这种叠层结构能够进一步减小整个SIP芯片的面积。不适合叠加在一起的功能芯片则以并排的方式集成于衬底510上,例如功能芯片560则相对于功能芯片520及功能芯片530,以并排的方式集成于衬底510上。另外,功能芯片通过bonding工艺将引线引出,以实现电气连接。衬底510上还集成有其他元件550,例如匹配的电阻、电容或者微带线Each SIP chip includes a substrate 510, and the functional chips within the SIP chip are integrated on the substrate 510 in a stacked or side-by-side manner. For example, the function chip 520 and the function chip 530 are integrated on the substrate 510 in a stacked manner, and this laminated structure can further reduce the area of the entire SIP chip. The functional chips that are not suitable for being stacked together are integrated on the substrate 510 in a side-by-side manner. For example, the functional chip 560 is integrated on the substrate 510 in a side-by-side manner with respect to the functional chip 520 and the functional chip 530. In addition, the functional chip leads the leads through a bonding process to achieve electrical connection. Other components 550 are also integrated on substrate 510, such as matched resistors, capacitors, or microstrip lines.
可以理解的是,SIP芯片的封装结构不限于上述一种情况,只要能够将相应的功能芯片封装在一起即可。It can be understood that the package structure of the SIP chip is not limited to the above one case, as long as the corresponding function chips can be packaged together.
具体的,各SIP芯片均通过表面贴装技术安装于上变频模块100或下变频模块200对应的PCB板,从而进一步减小了Ka波段卫星小站收发机的体积。另外,将安装完成后的PCB板置于波导腔体外壳之内,该波导腔体外壳具有波导、散热以及支撑等功能。Specifically, each SIP chip is mounted on the PCB board corresponding to the up-conversion module 100 or the down-conversion module 200 by surface mount technology, thereby further reducing the volume of the Ka-band satellite station transceiver. In addition, the PCB board after the installation is placed in the waveguide cavity housing, which has the functions of waveguide, heat dissipation and support.
同时,上变频模块100和下变频模块200共同安装于同一块PCB板上。这时,上变频模块100和下变频模块200则可以共用本振信号发生器,从而进一步减小了芯片的数量,缩小了产品的体积、节约了元器件成本。At the same time, the up-conversion module 100 and the down-conversion module 200 are installed together on the same PCB board. At this time, the up-conversion module 100 and the down-conversion module 200 can share the local oscillator signal generator, thereby further reducing the number of chips, reducing the size of the product, and saving component costs.
以上所述实施例的各技术特征可以进行任意的组合,为使描述简洁,未对上述实施例中的各个技术特征所有可能的组合都进行描述,然而,只要这些技术特征的组合不存在矛盾,都应当认为是本说明书记载的范围。The technical features of the above-described embodiments may be arbitrarily combined. For the sake of brevity of description, all possible combinations of the technical features in the above embodiments are not described. However, as long as there is no contradiction between the combinations of these technical features, All should be considered as the scope of this manual.
以上所述实施例仅表达了本发明的几种实施方式,其描述较为具体和详细,但并不能因此而理解为对发明专利范围的限制。应当指出的是,对于本领域的普通技术人员来说,在不脱离本发明构思的前提下,还可以做出若干变形和改进,这些都属于本发明的保护范围。因此,本发明专利的保护范围应以所附权利要求为准。The above-described embodiments are merely illustrative of several embodiments of the present invention, and the description thereof is more specific and detailed, but is not to be construed as limiting the scope of the invention. It should be noted that a number of variations and modifications may be made by those skilled in the art without departing from the spirit and scope of the invention. Therefore, the scope of the invention should be determined by the appended claims.
Claims (10)
- 一种Ka波段卫星小站收发机,包括上变频模块和下变频模块,其特征在于,所述上变频模块、下变频模块均连接于调制解调器与天线组件之间;A Ka-band satellite station transceiver includes an up-conversion module and a down-conversion module, wherein the up-conversion module and the down-conversion module are connected between the modem and the antenna assembly;所述上变频模块用于对所述调制解调器发送的信号进行上变频,并将上变频处理后的信号发送至所述天线组件;所述下变频模块用于对所述天线组件发送的信号进行下变频,并将下变频处理后的信号发送至所述调制解调器;同时,所述上变频模块或下变频模块包括若干利用系统级封装技术制造的SIP芯片,且各所述SIP芯片集成有若干电性连接且均采用半导体工艺制造的功能芯片。The up-conversion module is configured to up-convert a signal sent by the modem, and send the up-converted signal to the antenna component; the down-conversion module is configured to perform a signal sent by the antenna component Frequency conversion, and the down-converted signal is sent to the modem; at the same time, the up-conversion module or the down-conversion module includes a plurality of SIP chips manufactured by using system-level packaging technology, and each of the SIP chips is integrated with a plurality of electrical properties. Functional chips that are connected and fabricated using a semiconductor process.
- 根据权利要求1所述的Ka波段卫星小站收发机,其特征在于,所述上变频模块包括第一SIP芯片,且所述第一SIP芯片集成有第一本振信号发生器及第一本振信号放大器。The Ka-band satellite station transceiver according to claim 1, wherein the up-conversion module comprises a first SIP chip, and the first SIP chip is integrated with a first local oscillator signal generator and a first Vibration signal amplifier.
- 根据权利要求2所述的Ka波段卫星小站收发机,其特征在于,所述上变频模块还包括相连接的第二SIP芯片及第三SIP芯片;The Ka-band satellite station transceiver according to claim 2, wherein the up-conversion module further comprises a second SIP chip and a third SIP chip connected;所述第二SIP芯片集成有第一放大器及第一混频器,且所述第一混频器用于连接所述调制解调器;所述第三SIP芯片集成有第二放大器和第三放大器。The second SIP chip is integrated with a first amplifier and a first mixer, and the first mixer is used to connect the modem; the third SIP chip is integrated with a second amplifier and a third amplifier.
- 根据权利要求3所述的Ka波段卫星小站收发机,其特征在于,所述上变频模块还包括微带线滤波器及第一功率放大器;所述微带线滤波器连接于所述第一SIP芯片与第二SIP芯片之间;所述第三SIP芯片还与所述第一功率放大器连接;所述第一功率放大器还用于连接所述天线组件。The Ka-band satellite station transceiver according to claim 3, wherein the up-conversion module further comprises a microstrip line filter and a first power amplifier; the microstrip line filter is connected to the first Between the SIP chip and the second SIP chip; the third SIP chip is also connected to the first power amplifier; the first power amplifier is further configured to connect the antenna assembly.
- 根据权利要求1所述的Ka波段卫星小站收发机,其特征在于,所述下变频模块包括第四SIP芯片;所述第四SIP芯片集成有第二本振信号发生器及第二本振信号放大器。The Ka-band satellite station transceiver according to claim 1, wherein the down-conversion module comprises a fourth SIP chip; the fourth SIP chip is integrated with a second local oscillator signal generator and a second local oscillator signal amplifier.
- 根据权利要求5所述的Ka波段卫星小站收发机,其特征在于,所述下变频模块还包括相连接的第五SIP芯片及第六SIP芯片;The Ka-band satellite station transceiver according to claim 5, wherein the down-conversion module further comprises a fifth SIP chip and a sixth SIP chip connected;所述第五SIP芯片集成有若干级放大器,且所述第五SIP芯片还用于连接所述天线组件;所述第六SIP芯片集成有若干级滤波器。The fifth SIP chip is integrated with a plurality of stages of amplifiers, and the fifth SIP chip is further configured to connect the antenna components; the sixth SIP chip is integrated with a plurality of stages of filters.
- 根据权利要求6所述的Ka波段卫星小站收发机,其特征在于,所述下变频模块还包括本振信号滤波器、第二混频器、混频信号滤波器及第二功率放大器;The Ka-band satellite station transceiver according to claim 6, wherein the down-conversion module further comprises a local oscillator signal filter, a second mixer, a mixed-signal filter, and a second power amplifier;所述本振信号滤波器连接于所述第四SIP芯片与所述第二混频器之间;所述第二混频器还分别与所述第六SIP芯片、所述混频信号滤波器连接;所述混频信号滤波器还与所述第二功率放大器连接;所述第二功率放大器还用于连接所述调制解调器。The local oscillator signal filter is connected between the fourth SIP chip and the second mixer; the second mixer is further connected to the sixth SIP chip and the mixed signal filter respectively Connected; the mixing signal filter is also coupled to the second power amplifier; the second power amplifier is further configured to connect to the modem.
- 根据权利要求1至7中任一权利要求所述的Ka波段卫星小站收发机,其特征在于,所述SIP芯片包括衬底,且各所述功能芯片以层叠或并排的方式集成于所述衬底上。The Ka-band satellite station transceiver according to any one of claims 1 to 7, wherein the SIP chip comprises a substrate, and each of the functional chips is integrated in the stacked or side by side manner On the substrate.
- 根据权利要求1至7中任一权利要求所述的Ka波段卫星小站收发机,其特征在于,各所述SIP芯片通过表面贴装技术安装于所述上变频模块或下变频模块对应的PCB板。The Ka-band satellite station transceiver according to any one of claims 1 to 7, wherein each of the SIP chips is mounted on the PCB corresponding to the up-conversion module or the down-conversion module by surface mount technology. board.
- 根据权利要求1至7中任一权利要求所述的Ka波段卫星小站收发机,其特征在于,所述上变频模块和下变频模块共同安装于同一块PCB板上。The Ka-band satellite small station transceiver according to any one of claims 1 to 7, wherein the up-conversion module and the down-conversion module are installed together on the same PCB board.
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CN115275568A (en) * | 2022-07-29 | 2022-11-01 | 沈阳航盛科技有限责任公司 | Dual-frequency light integrated airborne satellite communication antenna equipment |
CN115275568B (en) * | 2022-07-29 | 2023-07-04 | 沈阳航盛科技有限责任公司 | Dual-frenquency light integration machine carries satellite communication antenna equipment |
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