WO2017215077A1 - 有机发光器件及显示面板 - Google Patents

有机发光器件及显示面板 Download PDF

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WO2017215077A1
WO2017215077A1 PCT/CN2016/090600 CN2016090600W WO2017215077A1 WO 2017215077 A1 WO2017215077 A1 WO 2017215077A1 CN 2016090600 W CN2016090600 W CN 2016090600W WO 2017215077 A1 WO2017215077 A1 WO 2017215077A1
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layer
light emitting
host material
luminescent
barrier layer
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English (en)
French (fr)
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汤金明
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武汉华星光电技术有限公司
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Priority to US15/118,866 priority Critical patent/US20180166645A1/en
Publication of WO2017215077A1 publication Critical patent/WO2017215077A1/zh

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    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/12—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
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    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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Definitions

  • the present invention relates to the field of display technologies, and in particular to an organic light emitting device and a display panel.
  • AMOLED abbreviation of Active-matrix organic light emitting diode, AMOLED for short
  • display panel has self-luminescence, simple structure, low cost, fast response, wide viewing angle, high color saturation, high contrast, thin and light, etc. compared with LCD panel. More and more smartphones and wearable devices are beginning to adopt AMOLED panels.
  • the invention provides an organic light emitting device and a display panel to solve the technical problem of short life of the AMOLED device in the prior art.
  • one technical solution adopted by the present invention is to provide an organic light emitting device, the device comprising:
  • a substrate layer a first electrode layer, a light emitting layer, and a second electrode layer which are sequentially stacked,
  • the method further includes a barrier layer disposed between the first electrode layer, the light emitting layer, or the second electrode layer and the light emitting layer, the barrier layer comprising a light emitting host material, and a triplet energy level T1 ⁇ of the light emitting material 2.5ev;
  • the first electrode layer and the second electrode layer are an anode layer and a cathode layer, respectively;
  • the difference between the barrier layer and the lowest unoccupied molecular orbital level of the electron transport layer being less than 0.2 ev, the barrier layer
  • the difference between the highest occupied molecular orbital energy levels of the electron transport layer is greater than 0.2 ev;
  • the luminescent layer is made of a first luminescent body material and a phosphorescent dopant, the barrier layer being made of a first luminescent body material.
  • Another technical solution adopted by the present invention is to provide an organic light emitting device, the device comprising:
  • a substrate layer a first electrode layer, a light emitting layer, and a second electrode layer which are sequentially stacked,
  • the method further includes disposing between the first electrode layer, the light emitting layer, or between the second electrode layer and the light emitting layer a barrier layer comprising a luminescent host material, the luminescent material having a triplet energy level T1 ⁇ 2.5 ev.
  • the first electrode layer and the second electrode layer are an anode layer and a cathode layer, respectively;
  • the barrier layer Further comprising an electron transport layer disposed between the barrier layer and the cathode layer, the difference between the barrier layer and the lowest unoccupied molecular orbital level of the electron transport layer being less than 0.2 ev, the barrier layer The difference between the highest occupied molecular orbital levels of the electron transport layer is greater than 0.2 ev.
  • the luminescent layer is made of a first luminescent body material and a phosphorescent dopant, the barrier layer being made of a first luminescent body material.
  • the chemical structure of the first luminescent host material is
  • the chemical structure of the first luminescent host material is
  • the chemical structure of the first luminescent host material is
  • the luminescent layer is made of a first luminescent body material, a second luminescent body material, and a phosphorescent dopant, the barrier layer being made of a first luminescent body material.
  • the first luminescent host material, the second luminescent host material, and the phosphorescent dopant have a film thickness ratio of 5:5:1.
  • the chemical structure of the second host luminescent material is
  • the barrier layer has a thickness ranging from 1 nm to 30 nm.
  • Another technical solution adopted by the present invention is to provide a display panel, wherein the display panel includes a substrate and the above-mentioned organic light emitting device, wherein the organic light emitting device is disposed on the substrate;
  • the organic light emitting device includes:
  • a substrate layer a first electrode layer, a light emitting layer, and a second electrode layer which are sequentially stacked,
  • the method further includes a barrier layer disposed between the first electrode layer, the light emitting layer, or the second electrode layer and the light emitting layer, the barrier layer comprising a light emitting host material, and a triplet energy level T1 ⁇ of the light emitting material 2.5ev.
  • the organic light-emitting device provided by the present invention has a barrier layer including a light-emitting host material, and the light-emitting host material has a high triplet energy level T1 as a barrier layer.
  • the lifetime of the organic light emitting device is improved.
  • FIG. 1 is a schematic structural view of a first embodiment of an organic light emitting device provided by the present invention
  • FIG. 2 is a schematic structural view of a second embodiment of an organic light emitting device provided by the present invention.
  • FIG. 3 is a schematic structural view of a third embodiment of an organic light emitting device provided by the present invention.
  • FIG. 4 is a schematic structural view of a fourth embodiment of an organic light emitting device provided by the present invention.
  • FIG. 5 is a schematic structural view of an embodiment of a display panel provided by the present invention.
  • FIG. 1 is a schematic structural view of a first embodiment of an organic light emitting device provided by the present invention.
  • the organic light emitting device 100 includes a substrate layer 110 , a first electrode layer 120 , a light emitting layer 130 , and a second electrode layer 140 , which are sequentially stacked on the first electrode layer 120 and the light emitting layer 130 .
  • the barrier layer 150, the barrier layer 150 comprises a light-emitting host material, and the triplet energy level of the light-emitting host material is T1 ⁇ 2.5 ev, wherein the triplet energy level T1 can reach 3.0 ev or more at most, and in a specific application example, the triplet state
  • the energy level T1 can be 2.8 ev.
  • the organic light-emitting device 100 provided by the present invention has a barrier layer 150 including a light-emitting host material, and the light-emitting host material has a high triplet energy level T1, and when used as the barrier layer 150, can block the diffusion of triplet excitons and reduce The excitons are quenched, thereby increasing the lifetime of the organic light-emitting device.
  • the substrate layer 110 is a transparent substrate, and may be a glass substrate or a flexible substrate.
  • the flexible substrate is made of one or more materials of a polyester type or a polyimide type compound.
  • the first electrode layer 120 is an anode layer, and the anode layer 120 can be an inorganic material or an organic conductive polymer, wherein the inorganic material is a metal or a metal oxide, and the metal is a metal having a higher work function, including gold, copper, silver, and the like.
  • the metal oxide is specifically indium tin oxide (ITO), zinc oxide, zinc tin oxide or the like;
  • the organic conductive polymer is one of polythiophene, sodium polyvinylbenzenesulfonate and polyaniline.
  • the second electrode layer 140 is a cathode layer
  • the cathode layer 140 can be a metal or a metal alloy, wherein the metal is a metal having a lower work function, including lithium, magnesium, calcium, barium, aluminum, indium, etc., and the metal alloy is a work function.
  • a cathode layer formed by alternating metal and metal fluorides such as a cathode formed of lithium fluoride and metallic silver, lithium fluoride and metallic aluminum.
  • the light emitting layer 130 is made of a first light emitting host material and a phosphorescent dopant, and the barrier layer 150 is made of a first light emitting host material.
  • the thickness of the barrier layer ranges from 1 nm to 30 nm, and further may be from 5 nm to 10 nm.
  • the first luminescent host material of the luminescent layer 130 and the barrier layer 150 of the organic light emitting device 100 is HOST1
  • the phosphorescent luminescent dopant is the green phosphorescent dye Dopant1
  • the film thickness of the phosphorescent dopant Dopant1 at the luminescent layer 130 is The percentage is 10%
  • the chemical structure of HOST1 is The chemical structure of Dopant1 is
  • the structure of the organic light-emitting device of this application example is the same as that of the first application example, except that the first light-emitting host material is HOST2, wherein the chemical structural formula of HOST2 is
  • the structure of the organic light-emitting device of this application example is the same as that of the first application example.
  • the difference is that the first light-emitting body material is HOST3, and the chemical structural formula of HOST3 is
  • the light emitting layer 130 is made of a first light emitting host material, a second light emitting host material, and a phosphorescent dopant
  • the barrier layer 150 is made of a first light emitting host material.
  • the film thickness ratio of the first luminescent host material, the second luminescent host material, and the phosphorescent dopant is 5:5:1.
  • the structure of the organic light-emitting device of this application example is the same as that of the first application example.
  • the difference is that the second light-emitting body material is added to the light-emitting layer 130, and the second light-emitting body material is Co-HOST, wherein the first light-emitting body material HOST1.
  • the film thickness ratio of the second luminescent host material Co-HOST and the phosphorescent luminescent dopant Dopant1 is 5:5:1, wherein the chemical structural formula of Co-HOST is
  • the structure of the organic light-emitting device of this application example is the same as that of the application example 4, except that the first light-emitting body material is HOST2.
  • the structure of the organic light-emitting device of this application example is the same as that of the application example 4, except that the first light-emitting body material is HOST3.
  • the barrier layer 150 comprising the first luminescent body material may not be employed.
  • the energy level parameters and mobility of the first luminescent host material and the second luminescent host material are shown in Table 1.
  • HOMO Highest Occupied Molecular Orbital
  • LUMO Low Unoccupied Molecular Orbital
  • S1 singlet level S1 is the lowest unoccupied molecular orbital (LUMO) level and The difference in the highest occupied molecular orbital (HOMO) energy level.
  • the first luminescent host material and the second luminescent host material have good bipolarity, which facilitates the injection and recombination of electrons and holes, so that the exciton recombination region is wide and can be improved.
  • the lifetime of the organic light-emitting device, while the first light-emitting body material and the second light-emitting body material are very high The triplet level T1, when used as a barrier layer, blocks the diffusion of triplet excitons and reduces exciton quenching, thereby increasing the lifetime of the organic light-emitting device.
  • the barrier layer 250 of the organic light emitting device 200 in this embodiment is disposed between the second electrode layer 240 and the light emitting layer 230 .
  • FIG. 3 is a schematic structural diagram of a third embodiment of an organic light emitting device provided by the present invention.
  • the first electrode layer 320 and the second electrode layer 340 are respectively an anode layer and a cathode layer; further comprising an electron transport layer 360 disposed between the barrier layer 350 and the cathode layer 340, and the lowest unoccupied layer 350 and the electron transport layer 360
  • the difference in molecular orbital (LUMO) energy levels is less than 0.2 ev
  • the difference between the barrier layer 350 and the highest occupied molecular orbital (HOMO) level of the electron transport layer 360 is greater than 0.2 ev.
  • the substrate layer, the anode layer, the light-emitting layer, the cathode layer and the barrier layer are essential layers, but in layers other than the necessary layer, a hole injection transport layer and an electron injection transport layer may be further included.
  • the hole injection transport layer refers to either or both of a hole injection layer and a hole transport layer
  • the electron injection transport layer refers to either or both of an electron injection layer and an electron transport layer.
  • the organic light emitting device 400 is a specific embodiment, and the structure of the organic light emitting device in the following embodiments is taken as a reference.
  • the organic light emitting device 400 includes a substrate layer 410, an anode layer 420, a hole injection layer 490, a hole transport layer 480, a light emitting layer 430, a barrier layer 450, an electron transport layer 460, an electron injection layer 470, and a cathode layer 440.
  • the substrate layer 410 is made of a glass substrate
  • the anode layer 420 is made of indium tin oxide (ITO)
  • the hole injection layer 490 is made of HAT (CN) 6
  • the hole transport layer 480 is made of Merck's HTM081.
  • the layer 430 is a first light-emitting body HOST1 and a phosphorescent dopant Dopant1
  • the barrier layer 450 is a first light-emitting body HOST1
  • the electron-transport layer 460 is a BPhen
  • the electron-injecting layer 470 is a LiF, a cathode layer.
  • the 440 is made of aluminum.
  • HAT(CN)6 is The specific composition of HTM081 is the trade secret of Merck.
  • BPhen's chemical structure is
  • the manufacturing method of the organic light emitting device 400 is mainly an evaporation method, and the manufacturing process thereof includes:
  • the ITO-coated glass substrate 410 is ultrasonically cleaned in a cleaning agent, then rinsed in deionized water, then ultrasonically cleaned in a mixed solvent of acetone:ethanol in a volume ratio of 1:1, and then baked in a clean environment.
  • the treated ITO-coated glass substrate 410 was placed in a vacuum chamber, evacuated to 1 ⁇ 10 -6 to 2 ⁇ 10 ⁇ 4 Pa, and HAT(CN) 6 was vacuum-deposited on the anode surface of the ITO.
  • the hole injection layer 490 wherein the evaporation rate ranges from 0.01 nm/s to 0.1 nm/s, and the evaporation thickness ranges from 1 nm to 10 nm.
  • the application example uses an evaporation rate of 0.05 nm/s and an evaporation thickness of 5 nm.
  • HTM081 is vapor-deposited on the surface of the hole injection layer 490 as a hole transport layer 480, wherein the evaporation rate ranges from 0.01 nm/s to 0.2 nm/s, and the evaporation thickness ranges from 10 nm to 30 nm.
  • This application example uses an evaporation rate. It was 0.1 nm/s, and the vapor deposition thickness was 20 nm.
  • the first light-emitting host material HOST1 and the phosphorescent dopant Dopant1 are vacuum-deposited on the surface of the hole transport layer 480 as the light-emitting layer 430, and the film thickness percentage of the phosphorescent dopant Dopant1 in the light-emitting layer 430 is 10%, wherein the double source
  • the first luminescent host material HOST1 and the phosphorescent luminescent dopant Dopant1 are vacuum-evaporated, wherein the first luminescent host material HOST1 has a vapor deposition rate ranging from 0.05 nm/s to 0.5 nm/s, and the phosphorescent dopant Dopant 1 is steamed.
  • the plating rate ranges from 0.005 nm/s to 0.05 nm/s, and the total thickness of the vapor deposition ranges from 10 nm to 50 nm, and the thickness of each material is distributed according to the evaporation rate ratio; in this application example, the first light-emitting host material HOST1 adopts an evaporation rate of At 0.1 nm/s, the phosphorescent dopant Dopant 1 has an evaporation rate of 0.01 nm/s and a total vapor deposition thickness of 30 nm.
  • the first luminescent host material is vacuum-deposited on the surface of the luminescent layer 430 as a barrier layer 450, wherein the evaporation rate ranges from 0.01 nm/s to 0.2 nm/s, and the evaporation thickness ranges from 1 nm to 10 nm. The rate was 0.1 nm/s and the evaporation thickness was 5 nm.
  • Bphen is vacuum-deposited on the surface of the barrier layer 450 as an electron transport layer 460, wherein the evaporation rate range
  • the thickness of the vapor deposition is in the range of 10 nm to 30 nm from 0.01 nm/s to 0.2 nm/s, and the evaporation rate is 0.1 nm/s and the vapor deposition thickness is 20 nm in this application example.
  • lithium fluoride is vacuum-deposited as the electron injection layer 470, wherein the evaporation rate ranges from 0.005 nm/s to 0.1 nm/s, and the vapor deposition thickness ranges from 0.1 nm to 5 nm.
  • the plating rate was 0.01 nm/s, and the vapor deposition thickness was 0.5 nm.
  • the cathode layer 440 On the surface of the electron injection layer 470, aluminum is vacuum-deposited as the cathode layer 440, wherein the evaporation rate ranges from 0.005 nm/s to 0.5 nm/s, and the evaporation thickness ranges from 100 nm to 200 nm.
  • the evaporation rate is 0.1 in this application example.
  • the nm/s thickness is 150 nm, and the thickness of the cathode layer 440 is much larger than the thickness of the other layers because the cathode layer 440 needs to be fully reflective.
  • each of the above layers may not be in a vacuum chamber, and each vacuum chamber is evacuated to 1 ⁇ 10 -6 to 2 ⁇ 10 -4 Pa.
  • the vapor deposition method and thickness of this application example are the same as those of the application example 7, except that the first light-emitting body material HOST1 of the light-emitting layer 430 and the barrier layer 450 is replaced with the first light-emitting body material HOST2.
  • the vapor deposition method and thickness of this application example are the same as those of the application example 7, except that the first light-emitting body material HOST1 of the light-emitting layer 430 and the barrier layer 450 is replaced with the first light-emitting body material HOST3.
  • the vapor deposition method and thickness of this application example are the same as those of the application example 7, except that the first light-emitting body material HOST1 of the light-emitting layer is replaced with the first light-emitting body material HOST1 and the second light-emitting body material Co-HOST.
  • the first light-emitting body material HOST1, the second light-emitting body material Co-HOST, and the phosphorescent dopant Dopant1 are vacuum-deposited on the surface of the hole transport layer 480 as the light-emitting layer 430, wherein the first light-emitting body material HOST1, the second The film thickness ratio of the light-emitting host material Co-HOST and the phosphorescent dopant Dopant1 in the light-emitting layer 430 was 5:5:1.
  • the first luminescent host material HOST1, the second luminescent host material Co-HOST and the phosphorescent luminescent dopant Dopant1 are vacuum-evaporated by three-source co-steaming, wherein the first luminescent host material HOST1 has a vapor deposition rate ranging from 0.05 nm/s to ⁇ 0.5 nm/s, the second luminescent host material Co-HOST evaporation rate ranges from 0.05 nm/s to 0.5 nm/s.
  • Phosphorescent luminescent dopant Dopant1 evaporation rate ranges from 0.005 nm/s to 0.05 nm/s, evaporation The total thickness ranges from 10 nm to 50 nm, and the thickness of each material is distributed according to the evaporation rate ratio.
  • the first luminescent body material HOST1 adopts an evaporation rate of 0.1 nm/s
  • the second luminescent main material Co-HOST is vapor-deposited. Rate is 0.1nm/s
  • the light dopant Dopant1 has an evaporation rate of 0.02 nm/s and a total vapor deposition thickness of 30 nm.
  • the vapor deposition method and thickness of this application example are the same as those of the tenth application example, except that the first light-emitting body material HOST1 of the light-emitting layer 430 and the barrier layer 450 is replaced with the first light-emitting body material HOST2.
  • the vapor deposition method and thickness of this application example are the same as those of the tenth application example, except that the first light-emitting body material HOST1 of the light-emitting layer 430 and the barrier layer 450 is replaced with the first light-emitting body material HOST3.
  • the vapor deposition method and thickness of this comparative example were the same as those of the application example 7, except that the barrier layer 450 made of the first light-emitting body material HOST1 was not used.
  • the color picking coordinates (0.32, 0.61) are referenced, and the application example 7 and the application example 8 and the application example 9 are substantially the same as the comparative example 1 (without the barrier layer 450).
  • the lifetime of the organic light-emitting device 400 is doubled because the first light-emitting host material has a high triplet energy level T1, and when used as the barrier layer 450, it can block the diffusion of triplet excitons and reduce excitons.
  • the exciton The composite region is further improved to further increase the lifetime of the organic light emitting device 400, wherein the lifetime of the organic light emitting device 400 is doubled.
  • FIG. 5 is a schematic structural diagram of an embodiment of a display panel provided by the present invention.
  • the display panel 50 includes a substrate 51 and the above-described organic light emitting device 400, wherein the organic light emitting device 400 is disposed on the substrate 51.
  • the structure of the organic light emitting device 400 is described above, and details are not described herein again.
  • the organic light-emitting device provided by the present invention has a barrier layer including a light-emitting host material, and the light-emitting host material has a high triplet energy level T1, and when used as a barrier layer, Blocking the diffusion of triplet excitons and reducing exciton quenching, thereby increasing the lifetime of the organic light-emitting device.

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Abstract

一种有机发光器件及显示面板，该器件包括依序层叠的基板层（110）、第一电极层（120）、发光层（130）、第二电极层（140），还包括设置于第一电极层（120）、发光层（130）之间，或第二电极层（140）、发光层（130）之间的阻挡层（150），阻挡层（150）包括发光主体材料，发光材料的三线态能级T1≥2.5ev。该有机发光器件由于设有包括发光主体材料的阻挡层（150），发光主体材料具有很高的三线态能级T1，当作为阻挡层时，能够阻挡三线态激子的扩散，减少激子淬灭，从而提高有机发光器件的寿命。

Description

有机发光器件及显示面板 【技术领域】
本发明涉及显示技术领域，具体是指一种有机发光器件及显示面板。
【背景技术】
由于AMOLED(Active-matrix organic light emitting diode的缩写，简称AMOLED)显示面板相对于LCD面板具有自发光、结构简单、成本低、反应速度快、广视角、色饱和度高、对比度高、轻薄等优点，越来越多的智能手机以及可穿戴设备，都开始采用AMOLED面板。
随着大规模的应用，对AMOLED的性能提出了更多更高的要求，如低电压、高亮度、高效率、低能耗、长寿命等等。
【发明内容】
本发明提供一种有机发光器件及显示面板，以解决现有技术中AMOLED器件寿命短的技术问题。
为解决上述技术问题，本发明采用的一个技术方案是：提供一种有机发光器件，所述器件包括：
依序层叠的基板层、第一电极层、发光层、第二电极层，
还包括设置于所述第一电极层、发光层之间，或第二电极层、发光层之间的阻挡层，所述阻挡层包括发光主体材料，所述发光材料的三线态能级T1≥2.5ev；
其中，所述第一电极层、第二电极层分别是阳极层、阴极层；
进一步包括设置于所述阻挡层与所述阴极层之间的电子传输层，所述阻挡层与所述电子传输层的最低未占分子轨道能级之差小于0.2ev，所述阻挡层与所述电子传输层的最高占据分子轨道能级之差大于0.2ev；
所述发光层由第一发光主体材料和磷光发光掺杂剂制成，所述阻挡层由第一发光主体材料制成。
本发明采用的另一个技术方案是：提供一种有机发光器件，所述器件包括：
依序层叠的基板层、第一电极层、发光层、第二电极层，
还包括设置于所述第一电极层、发光层之间，或第二电极层、发光层之间 的阻挡层，所述阻挡层包括发光主体材料，所述发光材料的三线态能级T1≥2.5ev。
根据本发明一实施例，所述第一电极层、第二电极层分别是阳极层、阴极层；
进一步包括设置于所述阻挡层与所述阴极层之间的电子传输层，所述阻挡层与所述电子传输层的最低未占分子轨道能级之差小于0.2ev，所述阻挡层与所述电子传输层的最高占据分子轨道能级之差大于0.2ev。
根据本发明一实施例，所述发光层由第一发光主体材料和磷光发光掺杂剂制成，所述阻挡层由第一发光主体材料制成。
根据本发明一实施例，所述第一发光主体材料的化学结构式为
Figure PCTCN2016090600-appb-000001
根据本发明一实施例，所述第一发光主体材料的化学结构式为
Figure PCTCN2016090600-appb-000002
根据本发明一实施例，所述第一发光主体材料的化学结构式为
Figure PCTCN2016090600-appb-000003
根据本发明一实施例，所述发光层由第一发光主体材料、第二发光主体材料和磷光发光掺杂剂制成，所述阻挡层由第一发光主体材料制成。
根据本发明一实施例，所述第一发光主体材料、所述第二发光主体材料以及所述磷光发光掺杂剂的膜厚比为5∶5∶1。
根据本发明一实施例，所述第二主体发光材料的化学结构式为
Figure PCTCN2016090600-appb-000004
根据本发明一实施例，所述阻挡层的厚度范围为1nm～30nm。
本发明采用的另一个技术方案是：提供一种显示面板，其中，所述显示面板包括基板和上述所述的有机发光器件，其中，所述有机发光器件设在所述基板上；其中，所述有机发光器件包括：
依序层叠的基板层、第一电极层、发光层、第二电极层，
还包括设置于所述第一电极层、发光层之间，或第二电极层、发光层之间的阻挡层，所述阻挡层包括发光主体材料，所述发光材料的三线态能级T1≥2.5ev。
本发明的有益效果是：区别于现有技术的情况，本发明提供的有机发光器件由于设有包括发光主体材料的阻挡层，发光主体材料具有很高的三线态能级T1，当作为阻挡层时，能够阻挡三线态激子的扩散，减少激子淬灭，从而提高有机发光器件的寿命。
【附图说明】
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图，其中：
图1是本发明提供的有机发光器件第一实施例的结构示意图；
图2是本发明提供的有机发光器件第二实施例的结构示意图；
图3是本发明提供的有机发光器件第三实施例的结构示意图；
图4是本发明提供的有机发光器件第四实施例的结构示意图；
图5是本发明提供的显示面板一实施例的结构示意图。
【具体实施方式】
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
请参阅图1，图1是本发明提供的有机发光器件第一实施例的结构示意图。
如图1所示，该有机发光器件100包括依序层叠的基板层110、第一电极层120、发光层130、第二电极层140，还包括设置于第一电极层120、发光层130之间的阻挡层150，阻挡层150包括发光主体材料，发光主体材料的三线态能级T1≥2.5ev，其中三线态能级T1最大能达到3.0ev或以上，其中一个具体应用例中，三线态能级T1可以为2.8ev。
本发明提供的有机发光器件100由于设有包括发光主体材料的阻挡层150，发光主体材料具有很高的三线态能级T1，当作为阻挡层150时，能够阻挡三线态激子的扩散，减少激子淬灭，从而提高有机发光器件的寿命。
基板层110是透明基板，可以是玻璃基板也可以是柔性基板，其中柔性基板采用聚酯类、聚酰亚胺类化合物中的一种或多种材料制成。
第一电极层120为阳极层，该阳极层120可以采用无机材料或有机导电聚合物，其中无机材料为金属或金属氧化物，金属为功函数较高的金属，包括金、铜、银等，金属氧化物具体为氧化铟锡(ITO)、氧化锌、氧化锡锌等；有机导电聚合物为聚噻吩、聚乙烯基苯磺酸钠、聚苯胺中的一种材料。
第二电极层140为阴极层，该阴极层140可以采用金属或者金属合金，其中金属为功函数较低的金属，包括锂、镁、钙、锶、铝、铟等，金属合金为功函数较低的金属合金或它们与金、银、铜的合金，还有其他实施例，采用金属与金属氟化物交替形成的阴极层，如氟化锂与金属银、氟化锂与金属铝形成的阴极层。
发光层130由第一发光主体材料和磷光发光掺杂剂制成，阻挡层150由第一发光主体材料制成。
阻挡层的厚度范围为1nm～30nm，进一步可以为5nm～10nm。
(1)应用例一
本应用例中，有机发光器件100的发光层130和阻挡层150的第一发光主体材料为HOST1，磷光发光掺杂剂为绿色磷光染料Dopant1，磷光发光掺杂剂Dopant1在发光层130的膜厚度百分比为10％，其中HOST1的化学结构式为
Figure PCTCN2016090600-appb-000005
Dopant1的化学结构式为
Figure PCTCN2016090600-appb-000006
(2)应用例二
本应用例的有机发光器件的结构与应用例一相同，不同的是，第一发光主体材料为HOST2，其中HOST2的化学结构式为
Figure PCTCN2016090600-appb-000007
(3)应用例三
本应用例的有机发光器件的结构与应用例一相同，不同的是，第一发光主体材料为HOST3，其中HOST3的化学结构式为
Figure PCTCN2016090600-appb-000008
发光层130由第一发光主体材料、第二发光主体材料和磷光发光掺杂剂制成，阻挡层150由第一发光主体材料制成。其中第一发光主体材料、第二发光主体材料以及磷光发光掺杂剂的膜厚比为5∶5∶1。
(4)应用例四
本应用例的有机发光器件的结构与应用例一相同，不同的是，在发光层130中增加了第二发光主体材料，第二发光主体材料为Co-HOST，其中第一发光主 体材料HOST1、第二发光主体材料Co-HOST以及磷光发光掺杂剂Dopant1的膜厚比为5∶5∶1，其中Co-HOST的化学结构式为
Figure PCTCN2016090600-appb-000009
(5)应用例五
本应用例的有机发光器件的结构与应用例四相同，不同的是，第一发光主体材料为HOST2。
(6)应用例六
本应用例的有机发光器件的结构与应用例四相同，不同的是，第一发光主体材料为HOST3。
还有其他应用例中，可以不采用包括第一发光主体材料的阻挡层150。
第一发光主体材料、第二发光主体材料的能级参数和迁移率见表1。
Figure PCTCN2016090600-appb-000010
表1 第一发光主体材料、第二发光主体材料的能级参数和迁移率
其中，HOMO(Highest Occupied Molecular Orbital的缩写)为最高占据分子轨道，LUMO(Lowest Unoccupied Molecular Orbital的缩写)为最低未占分子轨道，单线态能级S1是最低未占分子轨道(LUMO)能级与最高占据分子轨道(HOMO)能级的差值。
从表1的数据可以看出，第一发光主体材料和第二发光主体材料具有很好的双极性，其有利于电子和空穴的注入及复合，使激子复合的区域宽，可以提高有机发光器件的寿命，同时第一发光主体材料和第二发光主体材料具有很高 的三线态能级T1，当作为阻挡层时，能够阻挡三线态激子的扩散，减少激子淬灭，从而可以提高有机发光器件的寿命。
请参阅图2，本实施例中的有机发光器件200的阻挡层250设在第二电极层240、发光层230之间。
请参阅图3，图3是本发明提供的有机发光器件第三实施例的结构示意图。
第一电极层320、第二电极层340分别是阳极层、阴极层；进一步包括设置于阻挡层350与阴极层340之间的电子传输层360，阻挡层350与电子传输层360的最低未占分子轨道(LUMO)能级之差小于0.2ev，阻挡层350与电子传输层360的最高占据分子轨道(HOMO)能级之差大于0.2ev。
本发明的有机发光器件中，基板层、阳极层、发光层、阴极层和阻挡层作为必要层，但在必要层以外的层中，还可以包括空穴注入输送层、电子注入输送层，其中，空穴注入输送层是指空穴注入层和空穴输送层中的任一者或两者，电子注入输送层是指电子注入层和电子输送层中的任一者或两者。
请一并参阅图4，有机发光器件400为具体实施例，以下实施例中的有机发光器件的结构以此为参考。
有机发光器件400包括基板层410、阳极层420、空穴注入层490、空穴传输层480、发光层430、阻挡层450、电子传输层460、电子注入层470以及阴极层440。
(7)应用例七
基板层410采用的是玻璃基板，阳极层420采用的是氧化铟锡(ITO)，空穴注入层490采用的是HAT(CN)6，空穴传输层480采用的是merck公司的HTM081，发光层430采用的是第一发光主体HOST1和磷光发光掺杂剂Dopant1，阻挡层450采用的是第一发光主体HOST1，电子传输层460采用的是BPhen，电子注入层470采用的是LiF，阴极层440采用的是铝。
其中，HAT(CN)6的化学结构式为
Figure PCTCN2016090600-appb-000011
HTM081的具体成分 为merck公司的商业秘密。BPhen的化学结构式为
Figure PCTCN2016090600-appb-000012
有机发光器件400的制作方法主要为蒸镀法，其制作流程包括：
一、清洗基板层410、阳极层420
将涂覆有ITO的玻璃基板410在清洗剂中进行超声波清洗，然后在去离子水中冲洗，然后在丙酮∶乙醇体积比为1∶1的混合溶剂中进行超声清洗，然后在洁净环境下进行烘烤，烘烤温度范围为130℃～220℃，时间为一至两个小时，然后用紫外线光和臭氧进行清洗，然后用低能阳离子束轰击ITO的表面，使得玻璃基板410的ITO带有阳极，形成阳极层420。
二、蒸镀其他层
将处理后的涂覆有ITO的玻璃基板410置于真空腔内，抽真空至1×10-6至2×10-4Pa，在ITO的阳极表面上真空蒸镀HAT(CN)6作为空穴注入层490，其中蒸镀速率范围为0.01nm/s～0.1nm/s，蒸镀厚度的范围为1nm～10nm，本应用例采用蒸镀速率为0.05nm/s，蒸镀厚度为5nm。
在空穴注入层490表面蒸镀HTM081作为空穴传输层480，其中蒸镀速率范围为0.01nm/s～0.2nm/s，蒸镀厚度的范围为10nm～30nm，本应用例采用蒸镀速率为0.1nm/s，蒸镀厚度为20nm。
在空穴传输层480表面真空蒸镀第一发光主体材料HOST1和磷光发光掺杂剂Dopant1作为发光层430，磷光发光掺杂剂Dopant1在发光层430的膜厚度百分比为10％，其中以双源共蒸的方式真空蒸镀第一发光主体材料HOST1和磷光发光掺杂剂Dopant1，其中第一发光主体材料HOST1蒸镀速率范围为0.05nm/s～0.5nm/s，磷光发光掺杂剂Dopant1蒸镀速率范围为0.005nm/s～0.05nm/s，蒸镀总厚度的范围为10nm～50nm，各个材料的厚度按蒸镀速率比例分配；本应用例第一发光主体材料HOST1采用蒸镀速率为0.1nm/s，磷光发光掺杂剂Dopant1采用蒸镀速率为0.01nm/s，蒸镀总厚度为30nm。
在发光层430表面真空蒸镀第一发光主体材料作为阻挡层450，其中蒸镀速率范围为0.01nm/s～0.2nm/s，蒸镀厚度的范围为1nm～10nm，本应用例采用蒸镀速率为0.1nm/s，蒸镀厚度为5nm。
在阻挡层450表面真空蒸镀Bphen作为电子传输层460，其中蒸镀速率范围 为0.01nm/s～0.2nm/s，蒸镀厚度的范围为10nm～30nm，本应用例采用蒸镀速率为0.1nm/s，蒸镀厚度为20nm。
在电子传输层460表面真空蒸镀氟化锂作为电子注入层470，其中蒸镀速率范围为0.005nm/s～0.1nm/s，蒸镀厚度的范围为0.1nm～5nm，本应用例采用蒸镀速率为0.01nm/s，蒸镀厚度为0.5nm。
在电子注入层470表面真空蒸镀铝作为阴极层440，其中蒸镀速率范围为0.005nm/s～0.5nm/s，蒸镀厚度的范围为100nm～200nm，本应用例采用蒸镀速率为0.1nm/s，厚度为150nm，阴极层440的厚度远远大于其他层的厚度，因为阴极层440需要做到全反射条件。
以上各个层的真空蒸镀工艺可以不在一个真空腔内，每个真空腔内抽真空至1×10-6至2×10-4Pa。
(8)应用例八
本应用例的蒸镀方式及厚度与应用例七相同，不同的是，将发光层430和阻挡层450的第一发光主体材料HOST1换成第一发光主体材料HOST2。
(9)应用例九
本应用例的蒸镀方式及厚度与应用例七相同，不同的是，将发光层430和阻挡层450的第一发光主体材料HOST1换成第一发光主体材料HOST3。
(10)应用例十
本应用例的蒸镀方式及厚度与应用例七相同，不同的是，将发光层的第一发光主体材料HOST1换成第一发光主体材料HOST1和第二发光主体材料Co-HOST。
具体为，在空穴传输层480表面真空蒸镀第一发光主体材料HOST1、第二发光主体材料Co-HOST和磷光发光掺杂剂Dopant1作为发光层430，其中第一发光主体材料HOST1、第二发光主体材料Co-HOST以及磷光发光掺杂剂Dopant1在发光层430中的膜厚比为5∶5∶1。以三源共蒸的方式真空蒸镀第一发光主体材料HOST1、第二发光主体材料Co-HOST和磷光发光掺杂剂Dopant1，其中第一发光主体材料HOST1蒸镀速率范围为0.05nm/s～0.5nm/s，第二发光主体材料Co-HOST蒸镀速率范围为0.05nm/s～0.5nm/s磷光发光掺杂剂Dopant1蒸镀速率范围为0.005nm/s～0.05nm/s，蒸镀总厚度的范围为10nm～50nm，各个材料的厚度按蒸镀速率比例分配，本应用例第一发光主体材料HOST1采用蒸镀速率为0.1nm/s，第二发光主体材料Co-HOST采用蒸镀速率为0.1nm/s，磷光发 光掺杂剂Dopant1采用蒸镀速率为0.02nm/s，蒸镀总厚度为30nm。
(11)应用例十一
本应用例的蒸镀方式及厚度与应用例十相同，不同的是，将发光层430和阻挡层450的第一发光主体材料HOST1换成第一发光主体材料HOST2。
(12)应用例十二
本应用例的蒸镀方式及厚度与应用例十相同，不同的是，将发光层430和阻挡层450的第一发光主体材料HOST1换成第一发光主体材料HOST3。
(13)对比例一
本对比例的蒸镀方式及厚度与应用例七相同，不同的是，不采用由第一发光主体材料HOST1制成的阻挡层450。
各个应用例与对比例的有机发光器件400获得的性能参数见表2。
Figure PCTCN2016090600-appb-000013
表2 有机发光器件获得的性能参数
从表2的数据可以看出，取色坐标(0.32，0.61)为参考，应用例七、应用例八、应用例九与对比例一(没有阻挡层450)相比，电压和电流效率基本相同，其中有机发光器件400的寿命延长一倍，其原因在于，第一发光主体材料具有很高的三线态能级T1，当作为阻挡层450时，能够阻挡三线态激子的扩散，减少激子淬灭，从而可以提高有机发光器件400的寿命；应用例十、应用例十一、应用例十二与对比例一相比，当采用第一发光主体材料和第二发光主体材料时，激子的复合区域得到了进一步的改善，从而进一步提高了有机发光器件400的寿命，其中有机发光器件400的寿命又延长一倍。
请参阅图5，图5是本发明提供的显示面板一实施例的结构示意图。
如图5所示，该显示面板50包括基板51和上述的有机发光器件400，其中，有机发光器件400设在所述基板51上。
其中，有机发光器件400的结构参见上文所述，此处不再重复赘述。
综上所述，本领域技术人员容易理解，本发明提供的有机发光器件由于设有包括发光主体材料的阻挡层，发光主体材料具有很高的三线态能级T1，当作为阻挡层时，能够阻挡三线态激子的扩散，减少激子淬灭，从而提高有机发光器件的寿命。
以上所述仅为本发明的实施例，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (20)

  1. 一种有机发光器件，其中，所述器件包括：
    依序层叠的基板层、第一电极层、发光层、第二电极层，
    还包括设置于所述第一电极层、发光层之间，或第二电极层、发光层之间的阻挡层，所述阻挡层包括发光主体材料，所述发光材料的三线态能级T1≥2.5ev；
    其中，所述第一电极层、第二电极层分别是阳极层、阴极层；
    进一步包括设置于所述阻挡层与所述阴极层之间的电子传输层，所述阻挡层与所述电子传输层的最低未占分子轨道能级之差小于0.2ev，所述阻挡层与所述电子传输层的最高占据分子轨道能级之差大于0.2ev；
    所述发光层由第一发光主体材料和磷光发光掺杂剂制成，所述阻挡层由第一发光主体材料制成。
  2. 一种有机发光器件，其中，所述器件包括：
    依序层叠的基板层、第一电极层、发光层、第二电极层，
    还包括设置于所述第一电极层、发光层之间，或第二电极层、发光层之间的阻挡层，所述阻挡层包括发光主体材料，所述发光材料的三线态能级T1≥2.5ev。
  3. 根据权利要求2所述的器件，其中，
    所述第一电极层、第二电极层分别是阳极层、阴极层；
    进一步包括设置于所述阻挡层与所述阴极层之间的电子传输层，所述阻挡层与所述电子传输层的最低未占分子轨道能级之差小于0.2ev，所述阻挡层与所述电子传输层的最高占据分子轨道能级之差大于0.2ev。
  4. 根据权利要求2所述的器件，其中，所述发光层由第一发光主体材料和磷光发光掺杂剂制成，所述阻挡层由第一发光主体材料制成。
  5. 根据权利要求4所述的器件，其中，所述第一发光主体材料的化学结构式为
    Figure PCTCN2016090600-appb-100001
  6. 根据权利要求4所述的器件，其中，所述第一发光主体材料的化学结构式为
    Figure PCTCN2016090600-appb-100002
  7. 根据权利要求4所述的器件，其中，所述第一发光主体材料的化学结构式为
    Figure PCTCN2016090600-appb-100003
  8. 根据权利要求2所述的器件，其中，所述发光层由第一发光主体材料、第二发光主体材料和磷光发光掺杂剂制成，所述阻挡层由第一发光主体材料制成。
  9. 根据权利要求8所述的器件，其中，所述第一发光主体材料、所述第二发光主体材料以及所述磷光发光掺杂剂的膜厚比为5∶5∶1。
  10. 根据权利要求8所述的器件，其中，所述第二主体发光材料的化学结构式为
    Figure PCTCN2016090600-appb-100004
  11. 根据权利要求2所述的器件，其中，所述阻挡层的厚度范围为1nm～30nm。
  12. 一种显示面板，其中，所述显示面板包括基板和有机发光器件，其中，所述有机发光器件设在所述基板上；其中，所述有机发光器件包括：
    依序层叠的基板层、第一电极层、发光层、第二电极层，
    还包括设置于所述第一电极层、发光层之间，或第二电极层、发光层之间的阻挡层，所述阻挡层包括发光主体材料，所述发光材料的三线态能级T1≥2.5ev。
  13. 根据权利要求12所述的显示面板，其中，
    所述第一电极层、第二电极层分别是阳极层、阴极层；
    进一步包括设置于所述阻挡层与所述阴极层之间的电子传输层，所述阻挡层与所述电子传输层的最低未占分子轨道能级之差小于0.2ev，所述阻挡层与所述电子传输层的最高占据分子轨道能级之差大于0.2ev。
  14. 根据权利要求12所述的显示面板，其中，所述发光层由第一发光主体材料和磷光发光掺杂剂制成，所述阻挡层由第一发光主体材料制成。
  15. 根据权利要求14所述的显示面板，其中，所述第一发光主体材料的化学结构式为
    Figure PCTCN2016090600-appb-100005
  16. 根据权利要求14所述的显示面板，其中，所述第一发光主体材料的化 学结构式为
    Figure PCTCN2016090600-appb-100006
  17. 根据权利要求14所述的显示面板，其中，所述第一发光主体材料的化学结构式为
    Figure PCTCN2016090600-appb-100007
  18. 根据权利要求12所述的显示面板，其中，所述发光层由第一发光主体材料、第二发光主体材料和磷光发光掺杂剂制成，所述阻挡层由第一发光主体材料制成。
  19. 根据权利要求18所述的显示面板，其中，所述第一发光主体材料、所述第二发光主体材料以及所述磷光发光掺杂剂的膜厚比为5∶5∶1。
  20. 根据权利要求18所述的显示面板，其中，所述第二主体发光材料的化学结构式为
    Figure PCTCN2016090600-appb-100008
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