WO2017198055A1 - Method for manufacturing light-emitting diode package structure - Google Patents

Method for manufacturing light-emitting diode package structure Download PDF

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Publication number
WO2017198055A1
WO2017198055A1 PCT/CN2017/082171 CN2017082171W WO2017198055A1 WO 2017198055 A1 WO2017198055 A1 WO 2017198055A1 CN 2017082171 W CN2017082171 W CN 2017082171W WO 2017198055 A1 WO2017198055 A1 WO 2017198055A1
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WO
WIPO (PCT)
Prior art keywords
package structure
light emitting
fabricating
emitting diode
diode package
Prior art date
Application number
PCT/CN2017/082171
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French (fr)
Chinese (zh)
Inventor
林秋霞
林振端
时军朋
徐宸科
赵志伟
Original Assignee
厦门三安光电有限公司
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Publication of WO2017198055A1 publication Critical patent/WO2017198055A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements

Definitions

  • the present invention relates to an LED package, and more particularly to a method of fabricating a chip scale LED package structure.
  • the conventional LED package structure is to form a crystal on a metal support, a wire bond, and a fluorescent glue.
  • flip chip-based chip scale package LEDs Chip Scale Package LEDs, CSP LEDs for short
  • CSP LEDs Chip Scale Package LEDs
  • They are equipped with electrodes on the bottom surface of the chip, and the package is directly encapsulated on the upper surface and side package of the chip. The electrode is exposed. Since the package structure has no bracket or substrate, the package cost can be reduced.
  • the package form does not use a substrate, and does not require a bonding wire.
  • the chip is directly covered with a fluorescent glue and then cut.
  • the existing chip-scale package LEDs usually adopt five-sided illumination, that is, the top surface and the four sides of the LED can emit light, and the packaging process of the LED is relatively simple.
  • the CSP structure has a large illuminating angle and is suitable for a bulb lamp. In other applications, such as spotlights and backlights, the illuminating angle becomes a disadvantage.
  • FIG. 1 there is an improved CSP package structure in which a white reflective silica gel is used to make a vertical wall surface around the chip, and then a fluorescent film is attached on the surface of the chip to form a single-sided light-emitting structure.
  • the CSP structure has been applied to high-end applications such as backlights, flash lamps, and commercial lighting due to its excellent luminous efficiency, good heat dissipation structure, and compact external dimensions.
  • another modified CSP package structure is designed with a triangular beveled transparent adhesive around the flip chip, and then a vertical wall is filled with white reflective silica gel, and a fluorescent film is placed on the chip.
  • the light emitted from the side of the LED chip (such as the blue chip) can be brightened by the transparent glue, and the light is reflected from the white reflective silica gel at the bottom, which has better reflection effect.
  • Luminous effect the transparent plastic molding process (Molding) in the CSP structure usually adopts a hard mold with a convex three-dimensional trapezoidal shape, and the chip is damaged due to the unstable positional accuracy of the chip, which is easy to be crushed by the solid mold. As shown in FIG. 3, it is therefore necessary to express a new method for fabricating the LED package structure.
  • the technical problem to be solved by the present invention is to overcome the deficiencies of the prior art, and to provide a method for fabricating an LED package structure, which is simple in process and convenient for large-scale production.
  • a method for fabricating an LED package structure comprising the following steps:
  • the carrier substrate has a concave-convex structure.
  • the upper surface of the carrier substrate defining the distributed LED chip is a functional area, and the other upper surfaces are non-functional areas, and the functional area is higher than the non-functional area.
  • the carrier substrate is a transparent material layer.
  • the transparent material layer does not include a wavelength conversion material, such as a transparent substrate.
  • the transparent material layer contains a wavelength conversion material such as a transparent fluorescent film.
  • the adhesive surface may be formed by inserting a double-sided tape film or a thermal separation tape film, or by forming a viscous material, or modifying the surface of the carrier substrate.
  • the flexible mold has compressibility in a thickness direction, and the compression ratio is between 10% and 90%.
  • the flexible mold has a thickness of between 50 ⁇ m and 1 mm.
  • the flexible mold material is selected from PU foam) or TPU (thermoplastic elastomer polyurethane) or TPR (thermoplastic rubber) or PDMS or PET or transparent fluoropolymer, such as polytetrafluoroethylene (PTFE), poly Vinylidene fluoride (PVDF), fluorinated ethylene propylene copolymer (FEP) and polyvinyl fluoride (PVF).
  • PU foam or TPU (thermoplastic elastomer polyurethane) or TPR (thermoplastic rubber) or PDMS or PET or transparent fluoropolymer, such as polytetrafluoroethylene (PTFE), poly Vinylidene fluoride (PVDF), fluorinated ethylene propylene copolymer (FEP) and polyvinyl fluoride (PVF).
  • PU foam or TPU (thermoplastic elastomer polyurethane) or TPR (thermoplastic rubber) or PDMS or PET or transparent fluoropoly
  • the step (3) is replaced by: providing a flexible mold and forming a transparent glue at least on the outer edge of the lower surface of the flexible mold.
  • the flexible mold in the step (4) is applied through a hard mold or by applying pressure through a gas , to achieve a compression synthesis of transparent glue.
  • the method further comprises the step (5): removing the flexible mold, and filling a surface of the transparent adhesive with a layer of the reflective material.
  • step (6) removing the carrier substrate having an adhesive surface, bonding the LED chip and the wavelength conversion material layer, so that the LED chip The light emitting surface faces the wavelength conversion material layer.
  • the upper surface of the wavelength conversion material layer is a plane having a thickness of 5 ⁇ m to 200 ⁇ m.
  • the upper surface of the wavelength conversion material layer is roughened.
  • the method for fabricating the LED package structure includes at least the following technical effects: (1) A flexible mold is disposed between the hard mold and the flip-chip LED chip, which can ensure The transparent glue and the edge of the chip are tangent to prevent damage between the hard mold and the chip, and the transparent glue is prevented from overflowing to the chip electrode, causing poor contact; (2) The film is not aligned, and the soft film has good flexibility. Sexuality, which plays a role in correction, thereby increasing the yield of the product; (3) The carrier substrate with the concave-convex structure has an overflow effect on the transparent adhesive, so that the uniformity of the LEDs of different LEDs is better, and the C SP LED package is effectively improved. Structural yield and reliability.
  • FIG. 1 is a cross-sectional view showing a conventional CSP light emitting diode package structure.
  • FIG. 2 is a cross-sectional view showing another conventional CSP light emitting diode package structure.
  • FIG. 3 is a schematic view showing a press-compression type of the package structure transparent adhesive of FIG. 2 by using a hard mold.
  • 4 to FIG. 10 are schematic views showing the fabrication of a light emitting diode package structure according to Embodiment 1 of the present invention.
  • FIG. 12 are schematic views showing the fabrication of a light emitting diode package structure according to Embodiment 2 of the present invention.
  • FIG. 13 is a schematic view showing a press-composite type of a light-emitting diode package structure in which a flat carrier substrate of Embodiment 1 is fabricated.
  • FIG. 14 is a schematic view showing a press-composite type of a light-emitting diode package structure in the uneven-conducting substrate of the second embodiment.
  • 101 a carrier substrate; 102: an adhesive surface; 103: an LED chip; 104: a transparent adhesive; 105: a flexible mold; 106: a reflective material layer; and 107: a wavelength conversion material layer.
  • this embodiment discloses a method for fabricating an LED package structure, which includes the following process steps:
  • a glass substrate is provided as the carrier substrate 101, and a tape film is attached on the glass substrate, and a double-sided tape film or a thermal separation tape film may be selected to form on the glass substrate.
  • a viscous surface 102 and then distributing a plurality of flip-chip LED chips 103 on the adhesive surface such that the chip electrodes face upward, the chip light-emitting surface faces downward and is fixed on the tape film;
  • a layer of transparent glue 104 is coated around the flip-chip LED chip 103.
  • the transparent glue may contain a phosphor;
  • the flexible mold 105 is vacuum-adsorbed to the inverted concave-shaped hard mold 1051, and the selection of the flexible mold is preferably compressible in the thickness direction, and the compression ratio is 10 Between % and 90%, the thickness before compression is preferably between 50 ⁇ m and 1 mm.
  • the material of the flexible mold can be PU or TPU or TPR or PDMS or PET or transparent fluoropolymer, such as polytetrafluoroethylene (PTFE), polyvinylidene fluoride (PVDF), fluorine. Ethylene propylene copolymer (FEP) and polyvinyl fluoride (PVF), the material of the hard mold can be selected from metal, such as stainless steel 304;
  • the transparent adhesive 104 is subjected to Molding, that is, pressure is applied by the hard mold 104, so that the flexible mold 105 is pressed against the transparent adhesive 104 to form a surface on the transparent adhesive.
  • Molding that is, pressure is applied by the hard mold 104, so that the flexible mold 105 is pressed against the transparent adhesive 104 to form a surface on the transparent adhesive.
  • the flexible mold 105 and the hard mold 1051 are removed, and the surface of the transparent adhesive 104 is filled with a reflective material layer 106 to form a vertical wall surface, and the reflective material layer preferably has a white paint with high reflectivity. (white reflective silica gel), which can reduce the light-emitting surface of the LED, which is beneficial for subsequent design such as optical lens
  • the flip-chip LED chip is flipped by 180 degrees, and a wavelength conversion material layer 107, preferably a fluorescent film, is coated on the chip and the transparent adhesive, so that the light-emitting surface of the flip-chip LED chip faces the wavelength conversion.
  • the material layer can realize the demand for emitting white light.
  • the surface of the wavelength converting material layer 105 may be flat or roughened and have a thickness of between 5 ⁇ m and 200 ⁇ m.
  • an optical lens (not shown) having an arc structure is disposed on the wavelength conversion material layer 10 to increase light extraction efficiency.
  • the present invention provides a flexible mold (soft film) between the hard mold and the flip chip LED chip, which can ensure that the transparent glue and the edge of the chip are tangent to prevent the hard mold (such as metal).
  • the pressure between the chip and the chip is broken, and the transparent glue is prevented from overflowing to the chip electrode to cause poor contact; in addition, the chip is not aligned, and the soft film has good flexibility and plays a correcting role, thereby increasing the product yield.
  • the carrier substrate of the first embodiment has a flat structure as compared with the first embodiment, and the carrier substrate 101 of the present embodiment has a concave-convex structure. Defining the distribution
  • the upper surface of the carrier substrate of the LED chip is a functional area, and the other upper surface is a non-functional area, the functional area is "bumped", and the non-functional area forms a "depression", that is, the functional area is higher than the non-functional area.
  • the transparent adhesive 104 is coated on the periphery of the LED chip, that is, in the non-functional area, so that the non-functional area can be used as a colloidal storage groove, and the adjacent CSP LED package structure is used.
  • the fluidity of the transparent colloid is not limited to, but not limited to, but not limited to, but not limited to, but not limited to, but not limited to, but not limited to, but not limited to, but not limited to, the non-functional area, so that the non-functional area can be used as a colloidal storage groove, and the adjacent CSP LED package structure is used.
  • the fluidity of the transparent colloid is coated on the periphery of the LED chip, that is, in the non-functional area, so that the non-functional area can be used as a colloidal storage groove, and the adjacent CSP LED package structure is used.
  • the adjacent CSP LEDs are formed.
  • the transparent glue between the package structures is isolated from each other, and the colloids cannot flow to each other. If a part of the LEDs are less glued (the amount of the transparent glue is insufficient), it cannot be supplemented by the adjacent LEDs;
  • the carrier substrate as shown in FIG. 14, the transparent glue between the adjacent CSP LED package structures can flow to each other, and the non-functional area has an overflow effect on the transparent glue, so that the uniformity of the LEDs of different pieces is better and effective. Improve the yield and reliability of CSP LED package structures.
  • the adhesive surface of the carrier substrate of Embodiment 1 is formed by inserting a double-sided tape film, and the adhesive surface of the carrier substrate of the embodiment is formed by a surface modification process, optionally, the adhesive surface is also It can be formed by coating a viscous material.
  • Embodiment 1 uses a glass substrate that does not include a wavelength conversion material
  • the carrier substrate of the embodiment uses a transparent material layer including a wavelength conversion material, such as a transparent fluorescent film, so that The process steps of removing the carrier substrate and transferring to the wavelength conversion material layer are saved, thereby simplifying the process and saving manufacturing costs.
  • the embodiment 1 uses a flexible mold and a hard mold to press-form the transparent adhesive.
  • Molding does not use a hard mold, only a flexible mold, and applies pressure to the flexible mold by introducing a gas (such as nitrogen), so that the flexible mold is closely attached to the flip chip and the transparent glue, so
  • a gas such as nitrogen
  • the first embodiment adopts a transparent adhesive formed around the LED chip, and then the transparent adhesive is pressed and formed by a flexible mold, so that the surface of the transparent adhesive forms an inclined plane or a curved surface;
  • a transparent glue is formed on the outer edge of the lower surface of the flexible mold, and then the flexible mold is directed toward the LED chip and the carrier substrate, and pressure is applied to the flexible mold to press-form the transparent adhesive, so that the surface of the transparent adhesive forms an inclined plane. Or surface.
  • a transparent adhesive on the lower surface of the flexible mold may be formed, and a mask layer is disposed on the upper surface of the LED chip, so that after the transparent adhesive is synthesized, a transparent adhesive is also formed on the mask layer. Then, the mask layer and the transparent glue located thereon are removed together to obtain a transparent adhesive having an inclined plane or a curved surface around the LED chip.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

A method for manufacturing a light-emitting diode package structure comprises the processing steps of: providing a carrier substrate (101) having a viscous surface (102); distributing an LED chip (103) on the viscous surface such that a light-emitting surface of the LED chip faces the viscous surface; forming a transparent adhesive (104) around the LED chip; molding the transparent adhesive using a flexible mold (105) by pressing such that the surface of the transparent adhesive forms an inclined plane or a curved surface.

Description

说明书 发明名称：发光二极管封装结构的制作方法 技术领域  Description: Inventive name: manufacturing method of light emitting diode package structure
[0001] 本发明涉及一种 LED封装， 特别涉及一种芯片级发光二极管封装结构的制作方 法。  [0001] The present invention relates to an LED package, and more particularly to a method of fabricating a chip scale LED package structure.
背景技术  Background technique
[0002] 传统的 LED封装结构为在金属支架上固晶、 焊线、 封荧光胶。 近来使用基于倒 装芯片的芯片级封装 LED (英文为 Chip Scale Package LED, 简称 CSP LED) 非 常流行， 其在芯片底面设有电极， 直接在芯片的上表面和侧面封装上封装胶体 ， 使底面的电极外露， 由于这种封装结构并无支架或基板， 可降低了封装成本 ， 这种封装形式不使用基板， 也不需要焊线， 直接在芯片上覆盖荧光胶， 然后 切割即可。 现有的芯片级封装 LED通常是采取五面发光， 即 LED的顶面和四个侧 面均能发光， 该种 LED的封装工艺相对比较简单。 但是该种 CSP结构它发光角较 大， 较适合于球泡灯等， 在其他一些应用上， 如射灯、 背光等方面， 发光角大 成为其缺点。  [0002] The conventional LED package structure is to form a crystal on a metal support, a wire bond, and a fluorescent glue. Recently, flip chip-based chip scale package LEDs (Chip Scale Package LEDs, CSP LEDs for short) are very popular. They are equipped with electrodes on the bottom surface of the chip, and the package is directly encapsulated on the upper surface and side package of the chip. The electrode is exposed. Since the package structure has no bracket or substrate, the package cost can be reduced. The package form does not use a substrate, and does not require a bonding wire. The chip is directly covered with a fluorescent glue and then cut. The existing chip-scale package LEDs usually adopt five-sided illumination, that is, the top surface and the four sides of the LED can emit light, and the packaging process of the LED is relatively simple. However, the CSP structure has a large illuminating angle and is suitable for a bulb lamp. In other applications, such as spotlights and backlights, the illuminating angle becomes a disadvantage.
技术问题  technical problem
[0003] 如图 1所示， 有一种改进的 CSP封装结构， 采用白色反光硅胶在芯片周围做垂 直墙面， 然后在芯片表面贴一层荧光膜， 形成单面发光结构。 该 CSP结构以其优 异的发光效率、 良好的散热结构、 精巧的外形尺寸等优点， 已应用于背光、 闪 光灯、 商用照明等高端用途。 如图 2所示， 另一种改进的 CSP封装结构， 在倒装 芯片周围设计类似三角形斜面的透明胶， 然后在填充白色反光硅胶做垂直墙面 ， 在芯片上面贴一层荧光膜。 该结构上由于多一层斜面的透明胶， 从 LED芯片 （ 如蓝光芯片） 侧面发出的光线可以通过透明胶提高亮度， 在从底部的白色反光 硅胶把光反射出去， 增加反射作用具有较好的发光效果。 但是该 CSP结构中的透 明胶成型工艺 （Molding) ， 通常采用凸起立体梯形的硬质模具， 由于芯片位置 精度不稳定， 容易与硬质模具凸起的立体梯形压伤， 从而导致芯片的破损， 如 图 3所示， 因此需要幵发一种新的发光二极管封装结构的制作方法。 问题的解决方案 [0003] As shown in FIG. 1, there is an improved CSP package structure in which a white reflective silica gel is used to make a vertical wall surface around the chip, and then a fluorescent film is attached on the surface of the chip to form a single-sided light-emitting structure. The CSP structure has been applied to high-end applications such as backlights, flash lamps, and commercial lighting due to its excellent luminous efficiency, good heat dissipation structure, and compact external dimensions. As shown in Fig. 2, another modified CSP package structure is designed with a triangular beveled transparent adhesive around the flip chip, and then a vertical wall is filled with white reflective silica gel, and a fluorescent film is placed on the chip. Due to the multi-layered transparent adhesive on the structure, the light emitted from the side of the LED chip (such as the blue chip) can be brightened by the transparent glue, and the light is reflected from the white reflective silica gel at the bottom, which has better reflection effect. Luminous effect. However, the transparent plastic molding process (Molding) in the CSP structure usually adopts a hard mold with a convex three-dimensional trapezoidal shape, and the chip is damaged due to the unstable positional accuracy of the chip, which is easy to be crushed by the solid mold. As shown in FIG. 3, it is therefore necessary to express a new method for fabricating the LED package structure. Problem solution
技术解决方案  Technical solution
[0004] 本发明所要解决的技术问题是克服现有技术的不足， 提供一种发光二极管封装 结构的制作方法， 工艺简单， 便于实现规模化生产。  The technical problem to be solved by the present invention is to overcome the deficiencies of the prior art, and to provide a method for fabricating an LED package structure, which is simple in process and convenient for large-scale production.
[0005] 为解决上述技术问题， 本发明的技术方案是： 一种发光二极管封装结构的制作 方法， 包括以下步骤： [0005] In order to solve the above technical problem, the technical solution of the present invention is: A method for fabricating an LED package structure, comprising the following steps:
[0006] (1) 提供一具有粘性表面的承载基板； [0006] (1) providing a carrier substrate having an adhesive surface;
[0007] (2) 在所述粘性表面上分布 LED芯片， 使得 LED芯片发光面朝向粘性表面； [0008] (3) 在所述 LED芯片的周围形成透明胶；  [0007] (2) distributing the LED chip on the adhesive surface such that the light emitting surface of the LED chip faces the adhesive surface; [0008] (3) forming a transparent adhesive around the LED chip;
[0009] (4) 采用柔性模具对透明胶进行压合成型， 使得透明胶表面形成一倾斜平面 或曲面。  [0009] (4) The transparent glue is pressed into a flexible mold to form an inclined plane or a curved surface.
[0010] 优选地， 所述承载基板具有凹凸结构。  [0010] Preferably, the carrier substrate has a concave-convex structure.
[0011] 优选地， 定义分布 LED芯片的承载基板上表面为功能区， 其它上表面为非功能 区， 所述功能区高于所述非功能区。  [0011] Preferably, the upper surface of the carrier substrate defining the distributed LED chip is a functional area, and the other upper surfaces are non-functional areas, and the functional area is higher than the non-functional area.
[0012] 优选地， 所述承载基板为透明材料层。 [0012] Preferably, the carrier substrate is a transparent material layer.
[0013] 优选地， 所述透明材料层中不包含波长转换材料， 如透明基板。  [0013] Preferably, the transparent material layer does not include a wavelength conversion material, such as a transparent substrate.
[0014] 优选地， 所述透明材料层中包含波长转换材料， 如透明荧光膜。 [0014] Preferably, the transparent material layer contains a wavelength conversion material such as a transparent fluorescent film.
[0015] 优选地， 所述粘性表面可以藉由插入双面胶带膜或热分离胶带膜形成， 也可以 藉由涂覆粘性材料形成， 或是对承载基板表面进行改性形成。 [0015] Preferably, the adhesive surface may be formed by inserting a double-sided tape film or a thermal separation tape film, or by forming a viscous material, or modifying the surface of the carrier substrate.
[0016] 优选地， 所述柔性模具在厚度方向上具可压缩性， 压缩比例介于 10%与 90%之 间。 [0016] Preferably, the flexible mold has compressibility in a thickness direction, and the compression ratio is between 10% and 90%.
[0017] 优选地， 所述柔性模具的厚度介于 50μηι与 lmm之间。  [0017] Preferably, the flexible mold has a thickness of between 50 μm and 1 mm.
[0018] 优选地， 所述柔性模具材料选用 PU泡棉)或 TPU (热塑性弹性体聚氨酯)或 TPR( 热塑性橡胶)或 PDMS或 PET或透明氟聚合物， 如聚四氟乙烯 (PTFE)、 聚偏氟乙烯 (PVDF)、 氟化乙烯丙烯共聚物 (FEP)和聚氟乙烯 (PVF)。  [0018] Preferably, the flexible mold material is selected from PU foam) or TPU (thermoplastic elastomer polyurethane) or TPR (thermoplastic rubber) or PDMS or PET or transparent fluoropolymer, such as polytetrafluoroethylene (PTFE), poly Vinylidene fluoride (PVDF), fluorinated ethylene propylene copolymer (FEP) and polyvinyl fluoride (PVF).
[0019] 可选地， 所述步骤 （3) 替换为： 提供一柔性模具， 并至少在柔性模具的下表 面外边缘形成透明胶。  [0019] Optionally, the step (3) is replaced by: providing a flexible mold and forming a transparent glue at least on the outer edge of the lower surface of the flexible mold.
[0020] 优选地， 所述步骤 （4) 中柔性模具通过硬质模具或者通过通入气体施加压力 ， 实现对透明胶进行压合成型。 [0020] Preferably, the flexible mold in the step (4) is applied through a hard mold or by applying pressure through a gas , to achieve a compression synthesis of transparent glue.
[0021] 优选地， 在所述步骤 （4) 之后， 还包括步骤 （5) ： 移除所述柔性模具， 在所 述透明胶表面上填充反光材料层。 [0021] Preferably, after the step (4), the method further comprises the step (5): removing the flexible mold, and filling a surface of the transparent adhesive with a layer of the reflective material.
[0022] 优选地， 在所述步骤 （5) 之后， 还包括步骤 （6) ： 移除所述具有粘性表面的 承载基板， 将所述 LED芯片与波长转换材料层进行贴合， 使得 LED芯片的发光面 朝向波长转换材料层。 [0022] Preferably, after the step (5), further comprising the step (6): removing the carrier substrate having an adhesive surface, bonding the LED chip and the wavelength conversion material layer, so that the LED chip The light emitting surface faces the wavelength conversion material layer.
[0023] 优选地， 所述波长转换材料层的上表面为平面， 其厚度为 5μηι~200μιη。 [0023] Preferably, the upper surface of the wavelength conversion material layer is a plane having a thickness of 5 μm to 200 μm.
[0024] 优选地， 所述波长转换材料层的上表面有粗化。 [0024] Preferably, the upper surface of the wavelength conversion material layer is roughened.
发明的有益效果  Advantageous effects of the invention
有益效果  Beneficial effect
[0025] 与现有技术相比， 本发明提供的一种发光二极管封装结构的制作方法， 至少包 括以下技术效果： （1) 在硬质模具与倒装 LED芯片之间设置柔性模具， 可以保 证透明胶和芯片的边缘相切， 防止硬质模具与芯片之间压合造成破损， 同吋避 免透明胶溢到芯片电极造成接触不良； （2) 对于芯片排列不齐， 软膜具有良好 的柔韧性， 起到校正的作用， 从而增加产品良率； （3) 采用凹凸结构的承载基 板， 对透明胶具有溢流的作用， 从而使得不同颗的 LED均匀性更好， 有效提高 C SP LED封装结构的良率和可靠性。  [0025] Compared with the prior art, the method for fabricating the LED package structure provided by the present invention includes at least the following technical effects: (1) A flexible mold is disposed between the hard mold and the flip-chip LED chip, which can ensure The transparent glue and the edge of the chip are tangent to prevent damage between the hard mold and the chip, and the transparent glue is prevented from overflowing to the chip electrode, causing poor contact; (2) The film is not aligned, and the soft film has good flexibility. Sexuality, which plays a role in correction, thereby increasing the yield of the product; (3) The carrier substrate with the concave-convex structure has an overflow effect on the transparent adhesive, so that the uniformity of the LEDs of different LEDs is better, and the C SP LED package is effectively improved. Structural yield and reliability.
[0026] 本发明的其它特征和优点将在随后的说明书中阐述， 并且， 部分地从说明书中 变得显而易见， 或者通过实施本发明而了解。 本发明的目的和其他优点可通过 在说明书、 权利要求书以及附图中所特别指出的结构来实现和获得。  Other features and advantages of the invention will be set forth in the description which follows, and The objectives and other advantages of the invention will be realized and attained by the <RTI
对附图的简要说明  Brief description of the drawing
附图说明  DRAWINGS
[0027] 附图用来提供对本发明的进一步理解， 并且构成说明书的一部分， 与本发明的 实施例一起用于解释本发明， 并不构成对本发明的限制。 此外， 附图数据是描 述概要， 不是按比例绘制。  The drawings are intended to provide a further understanding of the invention, and are intended to be a part of the description of the invention. In addition, the drawing figures are a summary of the description and are not drawn to scale.
[0028] 图 1为现有的一种 CSP发光二极管封装结构的剖面图。  1 is a cross-sectional view showing a conventional CSP light emitting diode package structure.
[0029] 图 2为现有的另一种 CSP发光二极管封装结构的剖面图。  2 is a cross-sectional view showing another conventional CSP light emitting diode package structure.
[0030] 图 3为采用硬质模具对图 2中的封装结构透明胶进行压合成型示意图。 [0031] 图 4~图10为本发明之实施例 1的发光二极管封装结构的制作示意图。 3 is a schematic view showing a press-compression type of the package structure transparent adhesive of FIG. 2 by using a hard mold. 4 to FIG. 10 are schematic views showing the fabrication of a light emitting diode package structure according to Embodiment 1 of the present invention.
[0032] 图 11~图12为本发明之实施例 2的发光二极管封装结构的制作示意图。  11 to FIG. 12 are schematic views showing the fabrication of a light emitting diode package structure according to Embodiment 2 of the present invention.
[0033] 图 13为实施例 1的平整承载基板制作发光二极管封装结构的压合成型示意图。  13 is a schematic view showing a press-composite type of a light-emitting diode package structure in which a flat carrier substrate of Embodiment 1 is fabricated.
[0034] 图 14为实施例 2的凹凸承载基板制作发光二极管封装结构的压合成型示意图。  14 is a schematic view showing a press-composite type of a light-emitting diode package structure in the uneven-conducting substrate of the second embodiment.
[0035] 图中各标号表示如下：  [0035] The numbers in the figures are as follows:
[0036] 101： 承载基板； 102: 粘性表面； 103: LED芯片； 104: 透明胶； 105: 柔性 模具； 106: 反光材料层； 107: 波长转换材料层。  [0036] 101: a carrier substrate; 102: an adhesive surface; 103: an LED chip; 104: a transparent adhesive; 105: a flexible mold; 106: a reflective material layer; and 107: a wavelength conversion material layer.
本发明的实施方式 Embodiments of the invention
[0037] 下面结合示意图对本发明的 LED封装结构制作方法进行详细的描述， 在进一步 介绍本发明之前， 应当理解， 由于可以对特定的实施例进行改造， 因此， 本发 明并不限于下述的特定实施例。 还应当理解， 由于本发明的范围只由所附权利 要求限定， 因此所采用的实施例只是介绍性的， 而不是限制性的。 除非另有说 明， 否则这里所用的所有技术和科学用语与本领域的普通技术人员所普遍理解 的意义相同。  [0037] The method for fabricating the LED package structure of the present invention will be described in detail below with reference to the schematic drawings. Before further introducing the present invention, it should be understood that the invention is not limited to the specific embodiments described below. Example. It is also to be understood that the invention is not intended to be limited Unless otherwise stated, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art.
[0038] 实施例 1  Embodiment 1
[0039] 如图 1所示， 本实施例公幵了一种发光二极管封装结构的制作方法， 包括以下 工艺步骤：  As shown in FIG. 1 , this embodiment discloses a method for fabricating an LED package structure, which includes the following process steps:
[0040] (1) 如图 4所示， 提供一玻璃基板作为承载基板 101， 并在玻璃基板上贴一层 胶带膜， 可以选用双面胶带膜或热分离胶带膜， 从而在玻璃基板上形成粘性表 面 102， 然后在所述粘性表面上分布若干个倒装 LED芯片 103， 使得芯片电极朝上 ， 芯片发光面朝下并固在胶带膜上；  [0040] (1) As shown in FIG. 4, a glass substrate is provided as the carrier substrate 101, and a tape film is attached on the glass substrate, and a double-sided tape film or a thermal separation tape film may be selected to form on the glass substrate. a viscous surface 102, and then distributing a plurality of flip-chip LED chips 103 on the adhesive surface such that the chip electrodes face upward, the chip light-emitting surface faces downward and is fixed on the tape film;
[0041] (2) 如图 5所示， 在倒装 LED芯片 103周围涂覆一层透明胶 104， 可选地， 透明 胶可以包含有荧光粉；  [0041] (2) As shown in FIG. 5, a layer of transparent glue 104 is coated around the flip-chip LED chip 103. Alternatively, the transparent glue may contain a phosphor;
[0042] (3) 如图 6所示， 将柔性模具 105抽真空吸附于倒凹字形的硬质模具 1051， 柔 性模具的选择在厚度方向上以具可压缩性为佳， 压缩比例介于 10%与 90%之间， 压缩前厚度优选介于 50μηι与 lmm之间。 柔性模具的材质可选用 PU或 TPU或 TPR 或 PDMS或 PET或透明氟聚合物， 如聚四氟乙烯 (PTFE)、 聚偏氟乙烯 (PVDF)、 氟 化乙烯丙烯共聚物 (FEP)和聚氟乙烯 (PVF)， 硬质模具的材质可选用金属， 如不锈 钢 304; [0042] (3) As shown in FIG. 6, the flexible mold 105 is vacuum-adsorbed to the inverted concave-shaped hard mold 1051, and the selection of the flexible mold is preferably compressible in the thickness direction, and the compression ratio is 10 Between % and 90%, the thickness before compression is preferably between 50 μm and 1 mm. The material of the flexible mold can be PU or TPU or TPR or PDMS or PET or transparent fluoropolymer, such as polytetrafluoroethylene (PTFE), polyvinylidene fluoride (PVDF), fluorine. Ethylene propylene copolymer (FEP) and polyvinyl fluoride (PVF), the material of the hard mold can be selected from metal, such as stainless steel 304;
[0043] (4) 如图 7所示， 对透明胶 104进行压合成型 （Molding) ， 即通过硬质模具 10 51施加压力， 使得柔性模具 105与透明胶 104压合， 在透明胶表面形成一倾斜平 面或曲面；  [0043] (4) As shown in FIG. 7, the transparent adhesive 104 is subjected to Molding, that is, pressure is applied by the hard mold 104, so that the flexible mold 105 is pressed against the transparent adhesive 104 to form a surface on the transparent adhesive. An inclined plane or curved surface;
[0044] (5) 如图 8所示， 移除柔性模具 105以及硬质模具 1051， 在透明胶 104表面上填 充反光材料层 106形成垂直墙面， 反光材料层优选具有高反射率的白漆 （白色反 光硅胶） ， 从而可以将 LED的发光面缩小， 如此有利于后续比如光学透镜的设计  [0044] (5) As shown in FIG. 8, the flexible mold 105 and the hard mold 1051 are removed, and the surface of the transparent adhesive 104 is filled with a reflective material layer 106 to form a vertical wall surface, and the reflective material layer preferably has a white paint with high reflectivity. (white reflective silica gel), which can reduce the light-emitting surface of the LED, which is beneficial for subsequent design such as optical lens
[0045] (6) 如图 9所示， 剥离胶带膜 102和承载基板 101 ; [0045] (6) as shown in FIG. 9, the strip film 102 and the carrier substrate 101;
[0046] (7) 如图 10所示， 将倒装 LED芯片翻转 180度， 在芯片及透明胶上涂覆波长转 换材料层 107， 优选荧光膜， 从而使得倒装 LED芯片发光面朝向波长转换材料层 ， 可以实现发出白光等需求。 波长转换材料层 105表面可以为平面或粗化， 其厚 度介于 5μηι~200μιη之间。 可选的， 在波长转换材料层 10上设置弧形结构的光学 透镜 （图中未示出） ， 以增加光取出效率。  [0046] (7) As shown in FIG. 10, the flip-chip LED chip is flipped by 180 degrees, and a wavelength conversion material layer 107, preferably a fluorescent film, is coated on the chip and the transparent adhesive, so that the light-emitting surface of the flip-chip LED chip faces the wavelength conversion. The material layer can realize the demand for emitting white light. The surface of the wavelength converting material layer 105 may be flat or roughened and have a thickness of between 5 μm and 200 μm. Alternatively, an optical lens (not shown) having an arc structure is disposed on the wavelength conversion material layer 10 to increase light extraction efficiency.
[0047] 相较于现有技术， 本发明在硬质模具与倒装 LED芯片之间设置柔性模具 （软膜 ) ， 可以保证透明胶和芯片的边缘相切， 防止硬质模具 （如金属） 与芯片之间 压合造成破损， 同吋避免透明胶溢到芯片电极造成接触不良； 此外， 对于芯片 排列不齐， 软膜具有良好的柔韧性， 起到校正的作用， 从而增加产品良率。  Compared with the prior art, the present invention provides a flexible mold (soft film) between the hard mold and the flip chip LED chip, which can ensure that the transparent glue and the edge of the chip are tangent to prevent the hard mold (such as metal). The pressure between the chip and the chip is broken, and the transparent glue is prevented from overflowing to the chip electrode to cause poor contact; in addition, the chip is not aligned, and the soft film has good flexibility and plays a correcting role, thereby increasing the product yield.
[0048] 实施例 2  Embodiment 2
[0049] 如图 11所示， 与实施例 1相比， 实施例 1的承载基板为平整结构， 而本实施例的 承载基板 101呈凹凸结构。 定义分布 LED芯片的承载基板上表面为功能区， 其它 上表面为非功能区， 则功能区呈"凸起"， 非功能区形成 "凹陷"， 即功能区高于非 功能区。  As shown in FIG. 11, the carrier substrate of the first embodiment has a flat structure as compared with the first embodiment, and the carrier substrate 101 of the present embodiment has a concave-convex structure. Defining the distribution The upper surface of the carrier substrate of the LED chip is a functional area, and the other upper surface is a non-functional area, the functional area is "bumped", and the non-functional area forms a "depression", that is, the functional area is higher than the non-functional area.
[0050] 如图 12所示， 在上述 LED芯片的外围， 即非功能区内涂覆透明胶 104， 从而可 以发挥非功能区作为胶体收容槽的作用， 禾 lj于相邻 CSP LED封装结构之间的透 明胶体的流动性。  [0050] As shown in FIG. 12, the transparent adhesive 104 is coated on the periphery of the LED chip, that is, in the non-functional area, so that the non-functional area can be used as a colloidal storage groove, and the adjacent CSP LED package structure is used. The fluidity of the transparent colloid.
[0051] 如图 13所示， 平整承载基板的非功能区透明胶在压合成型后， 相邻的 CSP LED 封装结构之间的透明胶相互隔离， 胶体不能相互流动， 假如部分颗数的 LED少胶 (透明胶的涂胶量不够） ， 如此无法通过相邻颗的 LED来得到补充； 而采用凹凸 结构的承载基板， 如图 14所示， 相邻的 CSP LED封装结构之间的透明胶可以相 互流动， 利用非功能区对透明胶具有溢流的作用， 从而使得不同颗的 LED均匀性 更好， 有效地提高 CSP LED封装结构的良率和可靠性。 [0051] As shown in FIG. 13, after the non-functional area transparent adhesive of the carrier substrate is flattened, the adjacent CSP LEDs are formed. The transparent glue between the package structures is isolated from each other, and the colloids cannot flow to each other. If a part of the LEDs are less glued (the amount of the transparent glue is insufficient), it cannot be supplemented by the adjacent LEDs; The carrier substrate, as shown in FIG. 14, the transparent glue between the adjacent CSP LED package structures can flow to each other, and the non-functional area has an overflow effect on the transparent glue, so that the uniformity of the LEDs of different pieces is better and effective. Improve the yield and reliability of CSP LED package structures.
[0052] 实施例 3 Example 3
[0053] 与实施例 1区别在于， 实施例 1的承载基板粘性表面藉由插入双面胶带膜形成， 而本实施例的承载基板粘性表面通过表面改性工艺形成， 可选地， 粘性表面也 可以藉由涂覆粘性材料形成。  [0053] The difference from Embodiment 1 is that the adhesive surface of the carrier substrate of Embodiment 1 is formed by inserting a double-sided tape film, and the adhesive surface of the carrier substrate of the embodiment is formed by a surface modification process, optionally, the adhesive surface is also It can be formed by coating a viscous material.
[0054] 实施例 4  Example 4
[0055] 与实施例 1区别在于， 实施例 1的承载基板采用不包含波长转换材料的玻璃基板 ， 而本实施例的承载基板采用包含波长转换材料的透明材料层， 如透明荧光膜 ， 如此可以节省去除承载基板， 以及转移至波长转换材料层的工艺步骤， 从而 简化工艺， 节省制作成本。  [0055] The difference from Embodiment 1 is that the carrier substrate of Embodiment 1 uses a glass substrate that does not include a wavelength conversion material, and the carrier substrate of the embodiment uses a transparent material layer including a wavelength conversion material, such as a transparent fluorescent film, so that The process steps of removing the carrier substrate and transferring to the wavelength conversion material layer are saved, thereby simplifying the process and saving manufacturing costs.
[0056] 实施例 5  Example 5
[0057] 与实施例 1区别在于， 实施例 1采用柔性模具和硬质模具对透明胶进行压合成型  [0057] The difference from the embodiment 1 is that the embodiment 1 uses a flexible mold and a hard mold to press-form the transparent adhesive.
(Molding) ， 而本实施例不采用硬质模具， 仅采用柔性模具， 并通过通入气体 (如氮气） 对柔性模具施加压力， 使得柔性模具紧紧贴覆于倒装芯片以及透明 胶， 如此压合成型制得具有倾斜平面或曲面的透明胶。  (Molding), and this embodiment does not use a hard mold, only a flexible mold, and applies pressure to the flexible mold by introducing a gas (such as nitrogen), so that the flexible mold is closely attached to the flip chip and the transparent glue, so The press-formed type produces a transparent adhesive having an inclined plane or a curved surface.
[0058] 实施例 6  Example 6
[0059] 与实施例 1区别在于， 实施例 1采用先在 LED芯片的周围形成透明胶， 再采用柔 性模具对透明胶进行压合成型， 使得透明胶表面形成一倾斜平面或曲面； 而本 实施例采用在柔性模具的下表面外边缘先形成透明胶， 再将柔性模具朝向 LED芯 片及承载基板， 并对柔性模具施加压力， 从而对透明胶进行压合成型， 使得透 明胶表面形成一倾斜平面或曲面。 可选地， 还可以在柔性模具的下表面形成整 面透明胶， 并在 LED芯片的上表面设置一掩膜层， 如此则在透明胶压合成型后， 掩膜层上也会形成透明胶， 然后再一并去除掩膜层以及位于其上的透明胶， 即 可制得位于 LED芯片周围的具一倾斜平面或曲面的透明胶。 应当理解的是， 上述具体实施方案仅为本发明的部分优选实施例， 以上实施例 还可以进行各种组合、 变形。 本发明的范围不限于以上实施例， 凡依本发明所 做的任何变更， 皆属本发明的保护范围之内。 [0059] The difference from Embodiment 1 is that the first embodiment adopts a transparent adhesive formed around the LED chip, and then the transparent adhesive is pressed and formed by a flexible mold, so that the surface of the transparent adhesive forms an inclined plane or a curved surface; For example, a transparent glue is formed on the outer edge of the lower surface of the flexible mold, and then the flexible mold is directed toward the LED chip and the carrier substrate, and pressure is applied to the flexible mold to press-form the transparent adhesive, so that the surface of the transparent adhesive forms an inclined plane. Or surface. Optionally, a transparent adhesive on the lower surface of the flexible mold may be formed, and a mask layer is disposed on the upper surface of the LED chip, so that after the transparent adhesive is synthesized, a transparent adhesive is also formed on the mask layer. Then, the mask layer and the transparent glue located thereon are removed together to obtain a transparent adhesive having an inclined plane or a curved surface around the LED chip. It should be understood that the above specific embodiments are only some of the preferred embodiments of the present invention, and various combinations and modifications are possible in the above embodiments. The scope of the present invention is not limited to the above embodiments, and any changes made in accordance with the present invention are within the scope of the present invention.

Claims

权利要求书 Claim
一种发光二极管封装结构的制作方法， 包括以下步骤： A method for fabricating a light emitting diode package structure includes the following steps:
(1) 提供一具有粘性表面的承载基板；  (1) providing a carrier substrate having an adhesive surface;
(2) 在所述粘性表面上分布 LED芯片， 使得 LED芯片发光面朝向粘 性表面；  (2) distributing the LED chip on the adhesive surface such that the light emitting surface of the LED chip faces the adhesive surface;
(3) 在所述 LED芯片的周围形成透明胶；  (3) forming a transparent glue around the LED chip;
(4) 采用柔性模具对透明胶进行压合成型， 使得透明胶表面形成一 倾斜平面或曲面。  (4) The transparent adhesive is pressed into a flexible mold to form an inclined plane or curved surface.
根据权利要求 1所述的发光二极管封装结构的制作方法， 其特征在于 ： 所述承载基板具有凹凸结构。 The method of fabricating a light emitting diode package structure according to claim 1, wherein: the carrier substrate has a concave-convex structure.
根据权利要求 1所述的发光二极管封装结构的制作方法， 其特征在于 ： 定义分布 LED芯片的承载基板上表面为功能区， 其它上表面为非功 能区， 所述功能区高于所述非功能区。 The method for fabricating a light emitting diode package structure according to claim 1, wherein: the upper surface of the carrier substrate defining the distributed LED chip is a functional area, and the other upper surfaces are non-functional areas, and the functional area is higher than the non-functional area. Area.
根据权利要求 1所述的发光二极管封装结构的制作方法， 其特征在于 ： 所述承载基板为透明材料层。 The method of fabricating a light emitting diode package structure according to claim 1, wherein: the carrier substrate is a transparent material layer.
根据权利要求 4所述的发光二极管封装结构的制作方法， 其特征在于 ： 所述透明材料层包含波长转换材料或不包含波长转换材料。 The method of fabricating a light emitting diode package structure according to claim 4, wherein: the transparent material layer comprises or does not comprise a wavelength converting material.
根据权利要求 1所述的发光二极管封装结构的制作方法， 其特征在于 ： 所述粘性表面藉由插入双面胶带膜或热分离胶带膜形成或藉由涂覆 粘性材料形成或对承载基板表面进行改性形成。 The method of fabricating an LED package structure according to claim 1, wherein: the adhesive surface is formed by inserting a double-sided tape film or a thermal separation tape film or by coating a viscous material or performing a surface of the carrier substrate. Modified to form.
根据权利要求 1所述的发光二极管封装结构的制作方法， 其特征在于 ： 所述柔性模具在厚度方向上具可压缩性， 压缩比例介于 10%与 90% 之间。 The method of fabricating a light emitting diode package structure according to claim 1, wherein: the flexible mold has compressibility in a thickness direction, and the compression ratio is between 10% and 90%.
根据权利要求 1所述的发光二极管封装结构的制作方法， 其特征在于 ： 所述柔性模具的厚度介于 50μηι与 lmm之间。 The method of fabricating a light emitting diode package structure according to claim 1, wherein: the thickness of the flexible mold is between 50 μm and 1 mm.
根据权利要求 1所述的发光二极管封装结构的制作方法， 其特征在于 ： 所述柔性模具材料选用 PU或 TPU或 TPR或 PDMS或 PET或透明氟聚 合物。 [权利要求 10] 根据权利要求 1所述的发光二极管封装结构的制作方法， 其特征在于The method of fabricating a light emitting diode package structure according to claim 1, wherein: the flexible mold material is PU or TPU or TPR or PDMS or PET or transparent fluoropolymer. [Claim 10] The method of fabricating a light emitting diode package structure according to claim 1, wherein
： 所述步骤 （3) 替换为： 提供一柔性模具， 并至少在柔性模具的下 表面外边缘形成透明胶。 : The step (3) is replaced by: providing a flexible mold and forming a transparent glue at least on the outer edge of the lower surface of the flexible mold.
[权利要求 11] 根据权利要求 1所述的发光二极管封装结构的制作方法， 其特征在于[Claim 11] The method of fabricating a light emitting diode package structure according to claim 1, wherein
： 所述步骤 （4) 中柔性模具通过硬质模具或者通过通入气体施加压 力， 实现对透明胶进行压合成型。 : In the step (4), the flexible mold is pressed into a transparent mold by applying a pressure through a hard mold or by applying a gas.
[权利要求 12] 根据权利要求 1所述的发光二极管封装结构的制作方法， 其特征在于[Claim 12] The method of fabricating a light emitting diode package structure according to claim 1, wherein
： 在所述步骤 （4) 之后， 还包括步骤 （5) ： 移除所述柔性模具， 在 所述透明胶表面上填充反光材料层。 After the step (4), the method further includes the step (5): removing the flexible mold, and filling the surface of the transparent adhesive with a layer of the reflective material.
[权利要求 13] 根据权利要求 12所述的发光二极管封装结构的制作方法， 其特征在于[Claim 13] A method of fabricating a light emitting diode package structure according to claim 12, characterized in that
： 在所述步骤 （5) 之后， 还包括步骤 （6) ： 移除所述具有粘性表面 的承载基板， 将所述 LED芯片与波长转换材料层进行贴合， 使得 LED 芯片的发光面朝向波长转换材料层。 After the step (5), the method further includes the step (6): removing the carrier substrate having an adhesive surface, and bonding the LED chip to the wavelength conversion material layer such that the light emitting surface of the LED chip faces the wavelength Convert material layers.
PCT/CN2017/082171 2016-05-20 2017-04-27 Method for manufacturing light-emitting diode package structure WO2017198055A1 (en)

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