WO2017194320A1 - Système laser et son procédé de fonctionnement - Google Patents

Système laser et son procédé de fonctionnement Download PDF

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Publication number
WO2017194320A1
WO2017194320A1 PCT/EP2017/060082 EP2017060082W WO2017194320A1 WO 2017194320 A1 WO2017194320 A1 WO 2017194320A1 EP 2017060082 W EP2017060082 W EP 2017060082W WO 2017194320 A1 WO2017194320 A1 WO 2017194320A1
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WO
WIPO (PCT)
Prior art keywords
laser
groups
semiconductor
arrangement
layer
Prior art date
Application number
PCT/EP2017/060082
Other languages
German (de)
English (en)
Inventor
Sven GERHARD
Clemens VIERHEILIG
Andreas LÖFFLER
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Priority to DE112017002392.0T priority Critical patent/DE112017002392A5/de
Priority to US16/099,644 priority patent/US10608413B2/en
Publication of WO2017194320A1 publication Critical patent/WO2017194320A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4018—Lasers electrically in series
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06825—Protecting the laser, e.g. during switch-on/off, detection of malfunctioning or degradation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures

Definitions

  • a laser arrangement is specified.
  • an operating method for such a laser arrangement is specified.
  • An object to be solved is to provide a laser array with a plurality of semiconductor lasers, which also with
  • the laser arrangement may be pulsed or continuous, English continuous wave or short CW, operable.
  • Each laser group consists of exactly one semiconductor laser, so that the terms laser group and semiconductor laser can be synonyms.
  • Semiconductor laser means that the laser radiation generated during operation of the laser array on a
  • the Semiconductor lasers are solid-state lasers.
  • the semiconductor lasers may also be referred to as emitters or laser emitters.
  • a photothyristor like a normal thyristor, shows one
  • Breakdown voltage is the photothyristor electrically conductive, below the breakdown voltage only poorly conductive. In the case of a photothyristor, the breakdown voltage additionally depends on an illuminance.
  • Breakdown voltage Without light irradiation, the breakdown voltage is therefore highest, in the present case also as
  • Laser groups one of the photothyristors uniquely assigned. In particular, there is a 1: 1 mapping between the
  • Laser group and the photothyristor at least some
  • Sharing components such as semiconducting layers.
  • Photothyristors each optically coupled with the associated laser group. This means in normal operation in the Radiation produced by the respective laser group can at least partially reach the associated photothyristor.
  • the photothyristor and the associated laser group are each optically coupled with the associated laser group.
  • the intended operating voltage is approximately the voltage at which the laser arrangement is to be operated at the intended performance parameters.
  • the intended operating voltage is at least 0.3 V or 0.5 V or 0.7 V above a laser threshold voltage, from which laser radiation is generated.
  • Laser arrangement a plurality of laser groups, each with at least one semiconductor laser. Furthermore, the laser arrangement includes a plurality of photothyristors, so that each of the laser groups is uniquely associated with one of the photothyristors.
  • the photothyristors are each electrically connected in series with the associated laser group and / or integrated into the associated laser group. Furthermore, the photothyristors are each optically coupled to the associated laser group.
  • Photothyristor which is integrated in the epitaxially grown structure for the semiconductor laser, an electrical separation of the improperly functioning emitter on the laser bar reached by a current supply.
  • the semiconductor laser preferably arranged in a laser bar, so that the semiconductor laser can be mounted together without adjustment relative to each other.
  • the semiconductor lasers also have very similar emission properties, which considerably simplifies the further handling of the laser radiation.
  • the semiconductor lasers each have a semiconductor layer sequence.
  • the associated photothyristor is particularly preferably integrated.
  • Semiconductor layer sequences each before a pnpn sequence, which includes the associated photothyristor and the associated active zone of the corresponding semiconductor laser.
  • the letters n and p stand for n-conducting and p-conducting regions.
  • the semiconductor layer sequences each have a pipn sequence or a ninp sequence, where the letter i stands for an intrinsically conductive region of the semiconductor layer sequence.
  • conductive regions of the semiconductor layer sequence are preferred by dedicated layers or layer stacks in the
  • the semiconductor layer sequence is preferably based on a III-V compound semiconductor material.
  • the semiconductor material is In] __ n _ m N m Ga or a for example, a nitride compound semiconductor material such as Al n
  • Phosphide compound semiconductor material such as
  • Compound semiconductor material such as Al n In ] __ n _ m Ga m As or as
  • the semiconductor layer sequence is particularly preferably based on the AlInGaN material system.
  • Semiconductor laser of the laser array generated from a common semiconductor layer sequence. This can be the
  • Semiconductor lasers partially or completely removed, wherein a relative position of the semiconductor laser to each other by the removal of semiconductor material between the
  • Semiconductor lasers preferably not changed.
  • the growth substrate is, for example, a GaN substrate on which the semiconductor layer sequence
  • the laser arrangement is set up to generate visible laser radiation.
  • a peak wavelength also as the maximum wavelength
  • Intensity or peak wavength is preferably at least 400 nm or 420 nm or 440 nm and / or at most 590 nm or 540 nm or 495 nm or 470 nm.
  • the peak wavelength is in the near
  • the photothyristors each comprise an absorber layer.
  • the absorber layer is adapted to a part of the operation of the
  • the absorber layer of the photothyristor is in a functional
  • the absorber layer Compared to the layer in which the absorber layer is embedded, the absorber layer has an opposite or an intrinsic conductivity. If the cladding layer is, for example, an n-doped layer, then the
  • Absorber layer p-doped or intrinsically conductive.
  • Semiconductor laser at least one waveguide layer.
  • Waveguide layer preferably directly adjoins the active zone, in particular on both sides of the active zone. In the preferred exactly two waveguide layers, together with the active zone, a guidance of the generated
  • an evanescent field of the laser radiation guided in the at least one waveguide layer reaches as far as the absorber layer.
  • the laser radiation is not directed directly to the absorber layer, but is preferably parallel to the absorber layer guided. It is possible that the absorber layer absorbs radiation exclusively from the evanescent field and / or that scattered radiation of the laser radiation reaches the absorber layer.
  • Absorption edge corresponds to a bandgap of a
  • Absorption edge Eg is preferably one of the following
  • the absorption edge Eg preferably lies at the peak wavelength or at longer wavelengths. Alternatively, it is possible for the absorption edge Eg to lie in a blue, ie short-wave, edge of the emission spectrum of the associated laser group.
  • the device absorbs
  • the proportion of the laser radiation which is absorbed by the absorber layer is preferably included
  • this proportion is at most 5% or 2% or 0.3%. In particular, this proportion is at least 0.01% or 0.1% or 0.25%.
  • Refractive index n of the associated cladding layer 0.1 n ⁇ ⁇ D or 0.25 n ⁇ ⁇ D or 0.4 n ⁇ ⁇ D and / or D ⁇ n ⁇ or D ⁇ 0.75 n ⁇ or D ⁇ 0.5 n ⁇ . According to at least one embodiment, the
  • Absorber layer has a thickness of at least 10 nm or 20 nm or 30 nm or 50 nm. Alternatively or additionally, the thickness of the absorber layer is at most 1 ⁇ m or 500 nm or, preferably, 150 nm. In particular, the absorber layer is at least a factor of 2 or 5 or 10 thinner than the cladding layer into which the absorber layer is introduced.
  • the absorber layer is p-doped or intrinsically conductive. It is the
  • Cladding layer n-doped.
  • the absorber layer is n-doped or intrinsically conductive and the cladding layer is p-doped.
  • the absorber layer of the material system Al x InyGa ] _- x -y.
  • the jacket layer is made of the material system
  • x, y, z are 0.2 or x, y, z is 0.1 or x, y, z is 0.06, in each case for x, y, z together or independently of one another only for x or only for y or only for z or only for x and z or only for y and z or only for x and y.
  • the intended operating voltage is preferably at least 3.5 V and / or at most 8 V or 6 V. In accordance with at least one embodiment, adjacent ones are
  • Laser groups and / or adjacent semiconductor lasers optically isolated from each other.
  • optical isolation can be prevented that the photothyristors receive in operation radiation from adjacent laser groups and / or semiconductor lasers.
  • the optical isolation preferably reduces optical crosstalk by at least a factor of 5 or 10 or 100, compared to a laser arrangement without corresponding optical isolation.
  • the optical isolation is formed approximately by a trench in the semiconductor layer sequence, which may additionally be provided with a reflector and / or an absorber for the laser radiation.
  • the laser arrangement is designed edge-emitting.
  • a radiation direction of the laser arrangement is designed edge-emitting.
  • Laser radiation is thus preferably perpendicular to one
  • the laser arrangement is a laser bar.
  • the semiconductor lasers are preferably still on the common
  • the laser arrangement is thus generated and handled as a single component, in particular from a wafer.
  • all laser groups and / or semiconductor lasers are arranged next to one another as seen in plan view.
  • Resonators of the individual laser groups and / or semiconductor lasers are preferably parallel to one another
  • Semiconductor laser arranged one behind the other, based on a direction parallel to Resonatorachsen. According to at least one embodiment, exactly two electrical connections are present per laser group. In particular, no separate electrical connection is provided for the photothyristor.
  • Laser arrangement in particular the laser bar, at least 2 or 5 or 10 or 15 of the laser groups.
  • the laser arrangement has at most 150 or 100 or 60 or 40 of the laser groups and / or the semiconductor laser.
  • the laser arrangement is at the intended operating voltage to do so
  • an optical power of the laser radiation of at least 10 W or 15 W. In the case of pulsed laser radiation, this applies preferably on average over time.
  • the laser groups are preferably arranged in an n ⁇ m matrix, n and m are natural numbers. Preferably, n ⁇ m or n ⁇ Vm.
  • Laser groups or all laser groups are electrically connected in parallel.
  • n of the laser groups are electrically connected in series.
  • n of the laser groups are electrically connected in series.
  • n in each case Have laser groups.
  • the m series circuits can be connected in parallel to each other electrically.
  • laser radiation is generated only in a part of the laser groups.
  • Semiconductor lasers are defective and / or have an increased laser threshold.
  • the defective laser groups are electrically decoupled by the associated photothyristor so that no or no significant current flows through the at least one decoupled laser group during operation. This can mean that a current flow through the at least one decoupled, defective laser groups at the operating voltage is reduced by at least a factor of 2 or 5 or 10 or 25 or 100 with respect to the current flow of one of the normally functioning laser groups.
  • the photothyristor acts as a switch, the defective laser groups
  • the operating method is at least one laser arrangement
  • the laser arrangement comprises at least one defective laser group with an increased
  • the raised Laser threshold voltage is greater than the intended operating voltage, in particular, the laser threshold voltage at the defective laser groups by at least 0.3 V or 0.5 V or 0.7 V is greater than the intended operating voltage.
  • the increased laser threshold voltage may be less than or greater than the dark breakdown voltage of the associated photothyristor.
  • the associated photothyristor only in such laser groups with the laser radiation generated, in particular from the
  • FIGS 1, 2 and 5 are schematic representations of
  • FIGS 3 and 4 are schematic sectional views of
  • Figure 6 is a schematic representation of electrical
  • Figure 7 is a schematic representation of a
  • FIG. 1A an embodiment of a laser arrangement 1 is shown in a side view and in FIG. 1B in a plan view.
  • the laser arrangement 1 has a
  • a carrier 6 is present, which is to a
  • the semiconductor layer sequence 23 is divided into a plurality of laser groups 2, wherein each laser group 2 by a
  • Semiconductor laser 20 is formed. In the direction perpendicular to the plane and in the direction perpendicular to one
  • Growth direction G takes place in an emission region 26 a Emission of a laser radiation L, see Figure 1A.
  • Resonator direction R of the semiconductor laser 20 is parallel to the plane and perpendicular to the growth direction G.
  • the laser arrangement 1 of FIG. 1 is a laser bar
  • the individual semiconductor lasers 20 are mechanically coupled to one another at least via the growth substrate 24 and are relatively relative to a growth process
  • optical insulation 7 between adjacent laser groups 2.
  • the optical insulation 7 is provided, for example, by a trench in FIG.
  • Semiconductor layer sequence 23 is formed, evacuated or filled with a gas such as air or nitrogen or argon.
  • a gas such as air or nitrogen or argon.
  • the trenches may be partially or completely filled with a reflective or absorbent material.
  • the optical isolations 7 and thus in particular the trenches extend continuously as far as the carrier 6.
  • the optical isolations 7 and thus the trenches preferably do not completely separate the semiconductor layer sequence 23 and the optional growth substrate 24.
  • the optical isolations 7 separate the semiconductor layer sequence 23 from at least 25% and / or at most 90% from a side facing away from the carrier 7.
  • the optical isolations 7, from the side facing away from the carrier 7, separate the semiconductor layer sequence 23 together with the growth substrate 24 by at least 5% or 15% or 25% or 50% and / or at most 80% or 50% or 25%.
  • the semiconductor lasers 20, as shown in FIG. 1A, may be so-called gain-guided lasers.
  • the semiconductor lasers 20, as shown in FIG. 1A may be so-called gain-guided lasers.
  • the semiconductor lasers 20, as shown in FIG. 1A may be so-called gain-guided lasers.
  • Semiconductor laser 20 as a ridge waveguide laser, English ridge waveguide laser executed.
  • Laser groups 2 each include more of the semiconductor laser 20. Preferably, all laser groups 2 and semiconductor laser 20 of the laser assembly 1 are identical and emit at the same
  • Wavelength Wavelength.
  • differently colored emitting laser groups 2 or semiconductor lasers 20 may be present.
  • FIG. 2 shows a schematic sectional view of a further exemplary embodiment of the laser arrangement 1.
  • the growth substrate 24 may simultaneously act as a carrier 6.
  • electrical connections 41, 42 which are designed for example by surface metallizations.
  • each of the laser groups 2 is provided with exactly two electrical contact surfaces and the laser groups 2 are electrically connected in parallel.
  • the electrical connections 41, 42 it is not absolutely necessary for the electrical connections 41, 42 to be continuous surfaces.
  • the second electrical connection 42 can be applied in a structured manner to the semiconductor layer sequence 23, so that the laser groups 2 can be electrically controlled independently of one another.
  • In each of the laser groups 2 is an npnp sequence of
  • the photothyristor 3 comprises an absorber layer 33 which is in an n-side of the
  • Semiconductor laser 20 is embedded and designed according to Figure 2 p-doped.
  • the active zone 25 and the absorber layer 33 are optically coupled directly to each other and by none of the laser radiation L impermeable
  • the active zone 25 serves as a light source for switching the photothyristor 3.
  • the photothyristor 3 is an automatic switch that electrically disconnects non-functioning laser groups 2 and prevents or at least greatly reduces current flow through defective laser groups 2.
  • FIG. 6A the voltage U is plotted against a current I.
  • a light intensity is symbolized by a double arrow along the U axis.
  • the photothyristor 3 turns on reaching the dark breakdown voltage Ut and becomes electrically conductive.
  • Properly functioning semiconductor lasers 20 produce significant light from a normal laser threshold voltage Un, so that the absorber layer 33 is illuminated and switching of the photothyristor 3 to a normal diode characteristic already occurs at lower voltages.
  • the Photothyristor 3 at the normal operating voltage Ub through the absorption of radiation in the absorber layer 33 through.
  • an operating current Ib flows at the operating voltage Ub.
  • a threshold current In flows.
  • Absorber layer 33 is not or not significantly illuminated. Since the switching through of the photothyristor 3 in this case would take place only at the increased laser threshold voltage Ud, but this voltage is above the operating voltage Ub, the defective semiconductor laser 20 are electrically decoupled and are not or only slightly energized.
  • FIG. 6A A laser power P as a function of the current I is schematically illustrated in FIG. 6B.
  • An operating power Pb of the properly functioning semiconductor laser 20 is present at the operating current Ib, the defective semiconductor laser show no significant power consumption.
  • FIG. 3 illustrates a structure of the semiconductor layer sequence 23 in more detail.
  • an n-type cladding layer 22 having a relatively low refractive index, followed by an n-type waveguide layer 21 on which the active region 25 is located.
  • the active zone 25 is followed by a p
  • Waveguide layer 21 after, again followed by a p-type cladding layer 22.
  • the second electrical connection 42 On the p-cladding layer 22 is the second electrical connection 42, which consists of several
  • Metal layers may be composed, such as Au, Ni, Pd, Pt and / or Rh. Buffer layers or electrical
  • Terminal 42 are not drawn to simplify the illustration.
  • An electron blocking layer 27 is preferably located on the p-side of the semiconductor layer sequence 23. According to FIG. 3, the electron blocking layer 27 lies between the p-waveguide layer 21 and the p-cladding layer 22. Deviating from this, as in all other exemplary embodiments, the electron blocking layer 27 closer to the active region 25 in the p-type waveguide layer 21 or further away from the active region 25 in the p-type cladding layer 22.
  • n-cladding layer 22 Within the n-cladding layer 22 is the
  • a distance D of the absorber layer 33 to the n-waveguide layer 21 is preferably at about a peak wavelength of the
  • the absorber layer 33 is p-doped.
  • an npnp sequence of doped regions in the semiconductor layer sequence 23 is realized.
  • the semiconductor layer sequence 23 is preferably based on
  • the two cladding layers 22 are made of AlGaN
  • the waveguide layers 21 are formed, in particular with an aluminum content between 1% and 10% or between 4% and 6%.
  • the waveguide layers 21 are formed of InGaN, with an indium content preferably between 1% and 10% or between 2% and 6%.
  • the cladding layers 22 may be formed of GaN.
  • the active zone 25 is a
  • the electron blocking layer 27 is approximately formed of AlGaN and has a relatively small thickness of preferably at least 1 nm and / or at most 20 nm.
  • a thickness of the waveguide layers 21 is preferably at least 100 nm and / or at most 500 nm, wherein the waveguide layers 21 may be different in thickness.
  • the n-cladding layer 22 has, including the
  • Absorber layer 33 preferably a thickness of 1 ym to 4 ym, preferably about 2 ym, on.
  • a thickness of the absorber layer 33 is in particular at least 20 nm and / or at most 500 nm.
  • the absorber layer 33 is formed from AlInGaN, wherein an absorption edge of the absorber layer 33 is adjusted so that the laser radiation L can be absorbed.
  • a thickness of the absorber layer 33 is preferably included
  • the thickness of the absorber layer 33 is at most 0.5 times or one 0.2-fold or 0.1-fold of this total thickness.
  • the n-type cladding layer 22 is n-doped with silicon, for example. The lying in the n-cladding layer 22
  • Absorber layer 33 is either free from the n-type doping of n-type cladding layer 22 or an n-type dopant concentration reduced by at least a factor of 2 or 5 or 10.
  • the absorber layer 33 is doped, for example, with magnesium or has a codoping of carbon and magnesium.
  • In the absorber layer 23 may be ebneso be one or a plurality of undoped layers or low n-doped layers with a Si concentration ⁇ 5x10- ⁇ cm ⁇ 3, which may be co-doped with a MOVPE growth with carbon, so that effectively a p Conductivity results. This means that the C concentration is higher than the Si concentration.
  • FIG. 4 shows a further exemplary embodiment of the invention
  • the p-type cladding layer may be composed of the semiconductor layer 22a and a layer 22b, wherein the layer 22b is formed of a transparent conductive oxide such as ITO.
  • Laser groups 2 comprises one of the photothyristors 3. There are preferably significantly more parallel circuits than each laser groups 2 are arranged in the series circuits.
  • Photothyristors 3 are illuminated in one of the series circuits and switch through.
  • the individual laser groups 2 and laser diode chips are mounted side by side, for example, on a common support and / or heat sink.
  • FIG. 7 shows that the absorption edge Eg of the absorber layer 33 is preferably at a red, ie
  • the entire laser radiation L are absorbed in terms of their wavelength distribution. Deviating from this, it is possible that the absorption edge Eg lies on the blue edge or in the peak wavelength ⁇ .

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Dans un mode de réalisation, l'invention concerne un système laser (1) comprenant une pluralité de groupes laser (2) présentant chacun au moins un laser à semi-conducteur (20). Ce système laser (1) comprend en outre une pluralité de photothyristors (3) de sorte que chacun des groupes laser (2) est associé de manière définie à un des photothyristors (3). Les photothyristors (3) sont chacun montés électriquement en série avec leur groupe laser (2) associé et/ou sont intégrés dans leur groupe laser (2) associé. En outre, les photothyristors (3) sont chacun couplés optiquement à leur groupe laser (2) associé. Une tension de claquage sans lumière incidente (Ut) des photothyristors (3) est respectivement supérieure à une tension de service (Ub), conforme aux prescriptions, du groupe laser (2).associé.
PCT/EP2017/060082 2016-05-11 2017-04-27 Système laser et son procédé de fonctionnement WO2017194320A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE112017002392.0T DE112017002392A5 (de) 2016-05-11 2017-04-27 Laseranordnung und betriebsverfahren
US16/099,644 US10608413B2 (en) 2016-05-11 2017-04-27 Laser assembly and operating method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102016108700.9 2016-05-11
DE102016108700.9A DE102016108700A1 (de) 2016-05-11 2016-05-11 Laseranordnung und Betriebsverfahren

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Publication Number Publication Date
WO2017194320A1 true WO2017194320A1 (fr) 2017-11-16

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US (1) US10608413B2 (fr)
DE (2) DE102016108700A1 (fr)
WO (1) WO2017194320A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023074436A1 (fr) * 2021-10-29 2023-05-04 ソニーセミコンダクタソリューションズ株式会社 Dispositif émetteur de lumière et dispositif de mesure de distance

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11177632B2 (en) 2020-03-16 2021-11-16 International Business Machines Corporation Augmented semiconductor lasers with spontaneous emissions blockage

Citations (3)

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Publication number Priority date Publication date Assignee Title
US5404373A (en) * 1991-11-08 1995-04-04 University Of New Mexico Electro-optical device
US5572540A (en) * 1992-08-11 1996-11-05 University Of New Mexico Two-dimensional opto-electronic switching arrays
DE102004056621A1 (de) * 2004-08-21 2006-02-23 Dilas Diodenlaser Gmbh Diodenlaser mit einem einer Laserdiode elektrisch parallel geschalteten Schutzelement

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5132982A (en) * 1991-05-09 1992-07-21 Bell Communications Research, Inc. Optically controlled surface-emitting lasers
US6479844B2 (en) * 2001-03-02 2002-11-12 University Of Connecticut Modulation doped thyristor and complementary transistor combination for a monolithic optoelectronic integrated circuit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5404373A (en) * 1991-11-08 1995-04-04 University Of New Mexico Electro-optical device
US5572540A (en) * 1992-08-11 1996-11-05 University Of New Mexico Two-dimensional opto-electronic switching arrays
DE102004056621A1 (de) * 2004-08-21 2006-02-23 Dilas Diodenlaser Gmbh Diodenlaser mit einem einer Laserdiode elektrisch parallel geschalteten Schutzelement

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023074436A1 (fr) * 2021-10-29 2023-05-04 ソニーセミコンダクタソリューションズ株式会社 Dispositif émetteur de lumière et dispositif de mesure de distance

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DE102016108700A1 (de) 2017-11-16
DE112017002392A5 (de) 2019-01-24
US20190157844A1 (en) 2019-05-23
US10608413B2 (en) 2020-03-31

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