WO2017193653A1 - 基板处理设备 - Google Patents

基板处理设备 Download PDF

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Publication number
WO2017193653A1
WO2017193653A1 PCT/CN2017/073046 CN2017073046W WO2017193653A1 WO 2017193653 A1 WO2017193653 A1 WO 2017193653A1 CN 2017073046 W CN2017073046 W CN 2017073046W WO 2017193653 A1 WO2017193653 A1 WO 2017193653A1
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WO
WIPO (PCT)
Prior art keywords
aerosol
absorbing
liquid
section
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2017/073046
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English (en)
French (fr)
Inventor
刘小宁
王世凯
金童燮
耿军
胡臻
梁渲祺
张沣
黄腾飞
潘洋
蒋中任
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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Application filed by BOE Technology Group Co Ltd, Hefei Xinsheng Optoelectronics Technology Co Ltd filed Critical BOE Technology Group Co Ltd
Priority to US15/554,823 priority Critical patent/US20180108549A1/en
Publication of WO2017193653A1 publication Critical patent/WO2017193653A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0456—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3302—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3314—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers

Definitions

  • the present application relates to the technical field of substrate processing, and more particularly to a substrate processing apparatus including an aerosol absorbing device.
  • liquid crystal display panels have comprehensive performance in terms of brightness, contrast, power consumption, lifetime, volume and weight.
  • the advantage has been rapidly developed.
  • the process includes wet etching.
  • the wet etching uses an etching solution to etch away portions of the glass substrate that are not covered by the photoresist, thereby forming a desired metal pattern.
  • the etching solution used for the wet etching differs depending on the metal to be etched.
  • the etching liquid for ITO (indium tin oxide) metal is mainly nitric acid and sulfuric acid
  • the etching liquid for Al (aluminum) metal is mainly nitric acid, phosphoric acid and acetic acid
  • the etching liquid for Cu (copper) metal It is mainly an acidic solution of hydrogen peroxide.
  • FIG. 1 is a schematic diagram of a typical structure of a current wet etching apparatus.
  • the device mainly includes APP (Atmospheric Pressure Plasma) interval (active ions ionized by atmospheric pressure plasma to remove organic ions before etching), buffer zone, etching interval, cleaning interval, buffer zone and drying zone (shown from right to left in the figure).
  • the etching device mainly drives the substrate through the roller 3, and a certain number of nozzles 2 are distributed in the etching and cleaning sections, and nozzles on the nozzle can spray the liquid medicine.
  • the volatilized acid gas passes through the buffer zone to reach the APP section, corroding the APP electrode 5, reducing the service life of the APP electrode 5, and increasing the risk of occurrence of defects.
  • the acid gas of the etching liquid condenses into crystal particles 6 at the outlet between the buffer zones, which increases the risk of occurrence of poor disconnection.
  • a hood 4 is installed at the front end between the buffer zones, and an exhaust pipe is provided on the cover for discharging the acid gas flowing therethrough, and the etching interval is required.
  • Exhaust (or pumping) pressure is greater than the exhaust pressure between the buffer zones force.
  • the exhaust pressure is likely to fluctuate, and the displacement pressure of the buffer unit is not well grasped.
  • the acid gas in the etching interval is easily absorbed; In small cases, the acid gas flowing through the etching interval cannot be discharged in time. Therefore, it is desirable to have a better sour gas (or aerosol) treatment device.
  • the present application proposes a substrate processing apparatus capable of better treating the aerosol to reduce the influence of the etching liquid aerosol on components outside the etching section.
  • a substrate processing apparatus comprising an etched section, characterized in that the apparatus comprises one or more aerosol absorbing means disposed outside the substrate inlet of the etched section, the aerosol absorbing
  • the device includes one or more spray tubes. The aerosol extending outside the etching interval is absorbed by the aerosol absorbing device to reduce the influence of the aerosol on components outside the etching interval.
  • the spray tube is arranged to spray the absorbing liquid to bring the absorbing liquid into contact with the aerosol.
  • the aerosol-absorbent device includes a supply tube, a drain, and a plurality of spray nozzles disposed on the spray tube.
  • the spacing between the plurality of nozzles disposed on the same spray tube is in the range of 10-50 mm.
  • the exit direction of the nozzle is adjustable between 15 and 45 degrees downward relative to the horizontal.
  • the aerosol-absorbent device further includes an inclined trough having an inclined ramp through which the absorbing liquid is ejected to reach the draining device.
  • the inclined groove can provide a stable contact area of the absorbent with the aerosol and reduce the splash of the absorbent.
  • the opening of the inclined trench faces the substrate entrance of the etched section.
  • the water curtain of the absorbing liquid is directly rushed toward the substrate inlet of the etching section to increase the absorption efficiency.
  • the sloped ramp is formed by a planar ramp or a wavy ramp.
  • the wavy ramp can further increase the contact area.
  • the substrate processing apparatus further includes a transfer device for transporting the substrate to be processed, the aerosol absorption device being disposed below the transfer device.
  • the apparatus further includes an atmospheric pressure plasma (APP) surface treatment zone
  • APP atmospheric pressure plasma
  • the aerosol absorbing device is further located between the buffer zones for connecting the atmospheric pressure plasma surface treatment zone and the etch zone.
  • the apparatus further includes a hood that is disposed above the delivery device and above the aerosol absorbing device. The two work together to achieve better barrier effects.
  • the absorbing liquid is water or an alcoholic liquid or an alkaline solution.
  • different absorbing fluids are required.
  • the supply tube is connected to a plurality of supply sources via a valve, the plurality of supply sources respectively housing different types of absorption liquid.
  • the substrate processing apparatus further includes a cleaning section, and the draining device is connected to the conduit in the cleaning section via a valve. This enables recycling of the used absorbent after use.
  • the apparatus further includes a plurality of air knives disposed at an exit of the atmospheric pressure plasma surface treatment zone.
  • the plurality of air knives can form an air curtain for blocking, and the combined use of the air curtain and the aerosol absorbing device can further enhance the barrier effect and protect the APP electrode as much as possible.
  • the air knife is supplied with a clean dry gas (CDA) of adjustable pressure.
  • CDA clean dry gas
  • the bottom of the buffer zone is provided with an exhaust device and the aerosol absorption device is located between the exhaust device and the substrate inlet of the etched section.
  • the substrate processing apparatus can absorb the etching liquid mist flowing between the buffer zones, and can further utilize the air curtain to block the gas mist, and on the other hand, can reduce the wire breakage caused by the crystallization of the gas mist at the outlet of the buffer zone. On the other hand, it prevents the corrosion of the APP electrode by the aerosol. In addition, the oxidation of copper is prevented from being caused by the interaction of the gas mist and the APP, especially during the etching of the copper, and the occurrence of the metal residue defect caused thereby is avoided.
  • Fig. 1 is a view showing a typical structure of a wet etching apparatus in the prior art.
  • FIG. 2 shows a schematic structural view of a substrate processing apparatus according to an embodiment of the present application.
  • FIG. 3 shows a schematic structural view of a substrate processing apparatus according to another embodiment of the present application.
  • FIG. 4 shows a schematic structural view of an aerosol absorbing device according to an embodiment of the present application.
  • FIG. 5 shows a schematic structural view of an aerosol absorbing device according to another embodiment of the present application.
  • a substrate processing apparatus is illustrated in FIG.
  • the device is mainly used for wet etching a substrate such as a glass substrate.
  • the substrate processing apparatus is provided with an atmospheric pressure plasma surface treatment section (APP surface treatment section, abbreviated as APP section), a buffer zone, an etching section, and a cleaning section which are sequentially connected.
  • APP surface treatment section abbreviated as APP section
  • a buffer zone a buffer zone
  • etching section etching section
  • cleaning section which are sequentially connected.
  • the substrate processing apparatus may be provided with other processing intervals, such as a drying section or the like.
  • a conveyor 3 for transporting a substrate (not shown in the drawing) is provided in each section.
  • the buffer zone is used to connect two adjacent zones (such as atmospheric plasma surface treatment zone and etch zone) to buffer the pipeline operation.
  • An atmospheric pressure plasma surface treatment section (referred to as the APP surface treatment section) is provided with an APP electrode for providing active ions before etching to remove organic substances on the substrate.
  • a nozzle 2 is disposed in the etching section for spraying the etching liquid on the substrate.
  • the curved arrow in Fig. 2 indicates the acid mist or acid gas generated by the evaporation of the etching liquid during the spraying process, which easily enters the buffer zone from the substrate inlet 1 of the etching section, thereby entering the adjacent APP surface treatment section. .
  • the aerosol absorbing device 7 is disposed outside the entrance of the etching section.
  • the aerosol absorbing device 7 comprises one or more spray pipes which are sprayed with an absorbing liquid to bring the absorbing liquid into contact with an aerosol escaping from the substrate inlet 1 of the etched section, thereby realizing the aerosol. Absorbing, thereby achieving absorption or blocking of the aerosol.
  • the aerosol absorbing device 7 is disposed in the buffer between the etched section and the APP surface processing section near the substrate exit of the etched section. In some embodiments, the aerosol absorbing device 7 is disposed below the conveyor 3 to increase the effect of absorbing aerosol.
  • an exhaust hood 4 is provided above the aerosol absorbing device 7 and above the conveyor 3.
  • the combination of the two can achieve better aerosol absorption.
  • Fig. 2 Although only one aerosol absorbing device 7 is depicted in Fig. 2, it should be understood that the number of the aerosol absorbing devices 7 may be plural and evenly arranged in the buffer zone (Fig. 3 exemplarily shows The arrangement of the two aerosol absorbing devices 7 is provided). Further, the size of the aerosol absorbing device 7 is not limited to that shown in the drawings, and it can be made larger than the size shown in the drawing.
  • an air curtain 8 is further disposed at a substrate entrance between the buffers adjacent to the APP surface treatment section.
  • the air curtain 8 serves to further block the aerosol that may escape into the buffer zone to prevent it from entering the APP surface treatment zone.
  • the air curtain 8 is formed by an air knife which is supplied with a CDA (Clean Dry Air) having an adjustable pressure. The combination of the air curtain 8 with the aerosol absorbing device 7 and the hood 4 achieves the best aerosol barrier effect.
  • the substrate processing apparatus of the embodiment of the present application can reduce the wire breakage caused by the crystallization of the gas mist at the outlet of the buffer zone on the one hand, and prevent the corrosion of the APP electrode by the gas mist on the other hand.
  • the oxidation of copper is prevented from being caused by the interaction of the gas mist and the APP, especially during the etching of the copper, and the occurrence of the metal residue defect caused thereby is avoided.
  • the aerosol absorbing device 7 includes a liquid supply tube 12, a liquid discharge device 11, and one or more nozzles 10 disposed on the spray pipe.
  • the liquid supply tube 12 is preferably provided with a valve 13 to regulate the flow rate and flow rate of the absorbing liquid.
  • the absorbing liquid is ejected through the one or more nozzles 10, and is in contact with the aerosol to absorb the aerosol, and is recovered via the draining device 11.
  • one or more nozzles 10 are disposed on the shower tube 9 and spray the absorbing liquid obliquely with respect to the horizontal plane.
  • the spacing between the plurality of nozzles 10 disposed on the same shower tube may be in the range of 10-50 mm.
  • the exit angle of the nozzle 10 is preferably adjustable and may range between 15 and 45 degrees below the horizontal. This adjustment is achieved, for example, by rotating the spray pipe.
  • the aerosol absorbing device further comprises an inclined groove having an inclined ramp 14, and the spray pipe 9 is formed at the top of the inclined slope 14, and the absorbing liquid sprayed through the nozzle 10 passes through the The inclined ramp 14 reaches the drain 11 .
  • the draining device 11 is preferably disposed at the bottom of the slope of the inclined ramp.
  • the setting of the inclined ramp increases the area and time of contact of the absorbent with the aerosol.
  • the shape of the inclined ramp 14 is not limited to that shown in the figures, it may also have a wavy cross-sectional shape or other shape that increases the contact area.
  • the inclination angle and area of the inclined slope are not limited to those shown in the drawings, and may be set as needed.
  • the opening of the inclined groove preferably faces the substrate inlet of the etching section (i.e., the substrate exit between the buffer zones), so that the aerosol can be better absorbed by the absorption liquid in a timely manner.
  • the absorption liquid may be different.
  • the absorption liquid may be a solution which easily absorbs hydrogen peroxide such as water or alcohol;
  • the absorption liquid may be An alkaline solution such as a sodium hydroxide solution.
  • the inclined ramp is not necessary in the aerosol absorbing device 7.
  • the aerosol absorbing device 7 can form a water curtain in the air only by spraying of the spray pipe 9 (via a plurality of nozzles 10) to achieve an aerosol Barrier effect.
  • a liquid discharge device 10 is provided at the bottom to discharge the sprayed liquid.
  • the draining device 11 can be coupled to a cleaning conduit in a cleaning zone in the substrate processing apparatus to clean the substrate with the discharged absorbent (eg, water). This can be more economical.
  • the discharged absorbent eg, water
  • an exhaust device 15 is provided at the bottom of the buffer zone.
  • the aerosol absorbing device 7 is located between the venting device 15 and the substrate inlet 1 of the etched section. This arrangement can attract more aerosols to contact the aerosol absorbing device 7, thereby further increasing the aerosol absorbing effect.
  • the liquid supply tube 9 in the aerosol absorbing device 7 can be connected to a plurality of liquid supply sources, which can respectively accommodate absorption liquids for different etching liquid aerosols. .
  • the type of the absorbing liquid supplied to the liquid supply pipe 9 can be adjusted according to the etching liquid currently being used by the substrate processing apparatus, and the adaptability of the substrate processing apparatus is improved.

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Abstract

一种基板处理设备，包括刻蚀区间，其特征在于，该设备包括被布置在刻蚀区间的基板入口（1）外的一个或多个气雾吸收装置（7），该气雾吸收装置（7）包括一个或多个喷淋管。该气雾吸收装置（7）能够吸收来自刻蚀区间的刻蚀液气雾，从而降低该气雾对其余基板处理部件的伤害。

Description

基板处理设备 技术领域
本申请涉及基板处理的技术领域，尤其涉及包括气雾吸收装置的基板处理设备。
背景技术
随着九十年代TFT-LCD(Thin Film Transistor-Liquid Crystal Display，薄膜场效应晶体管-液晶显示器)技术的成熟，液晶显示面板因在亮度、对比度、功耗、寿命、体积和重量等综合性能的优势，得到了飞速的发展。为保证产品的合格率，各步工艺的均一性面临更大挑战。该工艺包括湿法刻蚀。
湿法刻蚀是利用刻蚀液将玻璃基板上未被光刻胶覆盖的部分刻蚀掉，从而形成所需的金属图案。湿法刻蚀所用的刻蚀液因待刻蚀的金属不同而有所差异。如用于ITO(氧化铟锡)金属的刻蚀液主要为硝酸和硫酸，用于Al(铝)金属的刻蚀液主要为硝酸、磷酸和醋酸，用于Cu(铜)金属的刻蚀液主要为双氧水的酸性溶液。
参考图1，图1为目前湿法刻蚀设备的典型结构示意图。该设备主要包括APP(Atmospheric Pressure Plasma，大气压等离子)区间(在刻蚀前将大气压等离子电离出氧等活性离子，对有机物进行去除)、缓冲区间、刻蚀区间、清洗区间、缓冲区间和干燥区间(在图中从右至左示出)。刻蚀设备主要通过滚轮3传动基板，在刻蚀和清洗区间中分布着一定数量的喷管2，喷管上有喷嘴可以喷洒药液。
因为刻蚀液中有挥发性的酸存在，挥发的酸气(或气雾)经过缓冲区间到达APP区间，对APP电极5进行腐蚀，减小APP电极5的使用寿命，增加发生不良的风险。在铜金属湿法刻蚀中，刻蚀液的酸气在缓冲区间出口凝结成结晶颗粒6，这增加断线不良发生风险。同时，发现，酸气和APP的交互作用导致铜金属发生氧化无法被刻蚀，造成金属残留的不良。
目前的刻蚀设备为了减少酸气(或气雾)流向缓冲区间，在缓冲区间的前端安装有一个罩子4，罩子上有排气管道用于排出流过来的酸气，同时要求刻蚀区间的排气(或抽气)压力大于缓冲区间的排气压 力。但是在实际使用中，排气压力容易发生波动，并且缓冲单元的排气压力大小不好把握，在排气压力太大的情况下容易把刻蚀区间的酸气吸收过来；在排气压力太小的情况下，刻蚀区间流过来的酸气不能及时被排出。因此，期望能有更好的酸气(或气雾)处理装置。
发明内容
鉴于以上问题，本申请提出了一种基板处理设备，其能够更好地对气雾进行处理，以减小刻蚀液气雾对刻蚀区间外的部件的影响。
根据一方面，提出了一种基板处理设备，包括刻蚀区间，其特征在于，所述设备包括被布置在刻蚀区间的基板入口外的一个或多个气雾吸收装置，所述气雾吸收装置包括一个或多个喷淋管。通过该气雾吸收装置实现对扩展到刻蚀区间外的气雾进行吸收，以减小气雾对刻蚀区间外的部件的影响。
在一些实施例中，所述喷淋管被布置为喷淋吸收液以使吸收液与气雾接触。
在一些实施例中，所述气雾吸收装置包括供液管、排液装置和布置在所述喷淋管上的多个喷液嘴。
在一些实施例中，被布置在同一个喷淋管上的多个喷液嘴之间的间距在10-50mm的范围内。
在一些实施例中，所述喷嘴的出射方向是在相对于水平面向下15到向下45度之间可调的。
在一些实施例中，所述气雾吸收装置还包括具有倾斜坡道的倾斜槽，所述吸收液被喷出之后经过所述倾斜坡道到达所述排液装置。该倾斜槽可以提供稳定的吸收液与气雾的接触面积，并且减小吸收液的溅出。
在一些实施例中，所述倾斜槽的开口朝向所述刻蚀区间的基板入口。使吸收液的水帘直接冲向刻蚀区间的基板入口，以增大吸收效率。
在一些实施例中，所述倾斜坡道由平面坡道或波浪形坡道形成。波浪形坡道能够进一步增大接触面积。
在一些实施例中，所述基板处理设备还包括用于传送待处理基板的传送装置，所述气雾吸收装置被布置在所述传送装置下方。
在一些实施例中，该设备还包括大气压等离子(APP)表面处理区 间，所述气雾吸收装置进一步位于用于连接所述大气压等离子表面处理区间和所述刻蚀区间的缓冲区间处。
在一些实施例中，该设备还包括排气罩，所述排气罩被布置在所述传送装置的上方并且在所述气雾吸收装置的上方。两者相互配合可实现更佳的阻隔效果。
在一些实施例中，所述吸收液为水或醇类液体或碱性溶液。对应于不同的刻蚀液气雾，需要使用不同的吸收液。
在一些实施例中，所述供液管经由阀门连接到多个供液源，所述多个供液源分别容纳不同种类的吸收液。
在一些实施例中，所述基板处理设备还包括清洗区间，而所述排液装置经由阀门连接到所述清洗区间中的管道。这可实现对使用过后的吸收液的回收利用。
在一些实施例中，该设备还包括被布置在所述大气压等离子表面处理区间的出口处的多个气刀。该多个气刀能够形成用于阻隔的气帘，该气帘与气雾吸收装置的组合使用能够进一步增强阻隔效果，尽可能保护APP电极。
在一些实施例中，所述气刀供有压力大小可调的清洁干燥气体(CDA)。
在一些实施例中，所述缓冲区间的底部设置有排气装置，并且气雾吸收装置位于所述排气装置和刻蚀区间的基板入口之间。
根据本申请的实施例的基板处理设备能够将流向缓冲区间的刻蚀液气雾进行吸收，还可进一步利用气帘阻隔气雾，一方面可以降低因气雾在缓冲区间出口结晶导致的断线不良，另一方面防止气雾对APP电极的腐蚀。此外，特别在铜刻蚀时避免了气雾和APP的交互作用导致铜的氧化，避免了因此导致的金属残留不良的发生。
附图说明
包括附图以提供对实施例的进一步理解并且附图被并入本说明书中并且构成本说明书的一部分。附图图示了实施例并且与描述一起用于解释本申请的原理。将容易认识到其它实施例和实施例的很多预期优点，因为通过引用以下详细描述，它们变得被更好地理解。附图的元件不一定是相互按照比例的。同样的附图标记指代对应的类似部件。
图1示出了现有技术中的湿法刻蚀设备的典型结构示意图。
图2示出了根据本申请的实施例的基板处理设备的结构示意图。
图3示出了根据本申请的另一实施例的基板处理设备的结构示意图。
图4示出了根据本申请的实施例的气雾吸收装置的结构示意图。
图5示出了根据本申请的另一实施例的气雾吸收装置的结构示意图。
具体实施方式
在以下详细描述中，参考附图，该附图形成详细描述的一部分，并且通过其中可实践本申请的说明性具体实施例来示出。对此，参考描述的图的取向来使用方向术语，例如“顶”、“底”、“左”、“右”、“上”、“下”等。因为实施例的部件可被定位于若干不同取向中，为了图示的目的使用方向术语并且方向术语绝非限制。应当理解的是，可以利用其他实施例或可以做出逻辑改变，而不背离本申请的范围。因此以下详细描述不应当在限制的意义上被采用，并且本申请的范围由所附权利要求来限定。
应当理解的是，本文描述的各个示例性实施例的特征可以相互组合，除非特别另外指出。
图2中示出了根据本申请的实施例的基板处理设备。该设备主要用于对基板(如玻璃基板)进行湿法蚀刻。在该实施例中，该基板处理设备中设置有依次连通的大气压等离子表面处理区间(APP表面处理区间，简称APP区间)、缓冲区间、蚀刻区间和清洗区间。应当理解的是，该基板处理设备还可设置有别的处理区间，例如干燥区间等。在每个区间中都设置有用于运送基板(在图中未示出)的传送装置3。
缓冲区间用于连接邻近的两个区间(例如大气压等离子表面处理区间和刻蚀区间)，以起到流水线作业中的缓冲作用。大气压等离子表面处理区间(简称APP表面处理区间)中设置有APP电极，用于在刻蚀前提供活性离子，以对基板上的有机物进行去除。而刻蚀区间中设置有喷管2，用于对基板喷洒刻蚀液。图2中的曲线箭头表示在喷洒过程中，刻蚀液挥发所产生的酸雾或酸气，其容易从刻蚀区间的基板入口1处进入到缓冲区间，从而进入相邻的APP表面处理区间。
因此在本申请的实施例中，在刻蚀区间的入口外设置了气雾吸收装置7。该气雾吸收装置7包括一个或多个喷淋管，喷淋管通过喷淋吸收液以使吸收液与从刻蚀区间的基板入口1处逸出的气雾接触，从而实现对气雾的吸收，进而实现对气雾的吸收或阻隔。具体地，该气雾吸收装置7被布置在刻蚀区间和APP表面处理区间之间的缓冲区间中靠近刻蚀区间的基板出口处。在一些实施例中，该气雾吸收装置7被布置在传送装置3下方，以增大吸收气雾的效果。并且优选地，在气雾吸收装置7的上方以及传送装置3的上方设置了排气罩4。两者配合工作能够实现更好的气雾吸收效果。虽然在图2中仅仅描绘出一个气雾吸收装置7，但是应当理解的是，该气雾吸收装置7的数量可以是多个，并且被均匀布置在缓冲区间中(图3示例性示出了设置两个气雾吸收装置7的布置)。另外，该气雾吸收装置7的尺寸不限于图中所示那样，其可以被制作地比图中所显示的尺寸更大。
另外在一些实施例中，在缓冲区间靠近APP表面处理区间的基板入口处设置进一步设置有气帘8。该气帘8用于进一步阻隔可能逃逸到缓冲区间中的气雾，以防止其进入到APP表面处理区间中。该气帘8由气刀形成，该气刀被供有压力大小可调的CDA(Clean Dry Air，清洁干燥气体)。而该气帘8与气雾吸收装置7以及排气罩4的组合可实现最好的气雾阻隔效果。
本申请的实施例的基板处理设备一方面可以降低因气雾在缓冲区间出口结晶导致的断线不良，另一方面防止气雾对APP电极的腐蚀。此外，特别在铜刻蚀时避免了气雾和APP的交互作用导致铜的氧化，避免了因此导致的金属残留不良的发生。
图4中示出了气雾吸收装置7的具体构造。在本申请的实施例中，该气雾吸收装置7包括供液管12、排液装置11和被布置在喷淋管上的一个或多个喷嘴10。该供液管12优选设置有阀门13以调节吸收液的流量和流速。吸收液经由一个或多个喷嘴10喷出，并且与气雾接触以吸收气雾，并且经由排液装置11被回收。在一些实施例中，一个或多个喷嘴10被设置于喷淋管9上，并且相对于水平面倾斜喷淋吸收液。被布置在同一个喷淋管上的多个喷嘴10之间的间距可以在10-50mm的范围内。而喷嘴10的出射角度优选是可调的，并且可以在相对于水平面向下15度到45度之间的范围内。该可调例如通过旋转喷淋管的方式来实现。
而在特定实施例中，该气雾吸收装置还包括具有倾斜坡道14的倾斜槽，并且喷淋管9形成在倾斜坡道14的坡顶，而经由喷嘴10喷淋的吸收液经由所述倾斜坡道14到达排液装置11。排液装置11优选在倾斜坡道的坡底处设置。倾斜坡道的设置增大了吸收液与气雾接触的面积和时间。应当认识到，该倾斜坡道14的形状不限于图中所示那样，其也可以具有波浪形的截面形状或其它增大该接触面积的形状。另外，该倾斜坡道的倾斜角度和面积不限于图中所示那样，而可以根据需要进行设置。另外，该倾斜槽的开口优选朝向刻蚀区间的基板入口(即缓冲区间的基板出口)，从而能够更好地使气雾更及时地被吸收液吸收。
对于不同的刻蚀液，吸收液可能不同，比如对于双氧水系的铜刻蚀液，吸收液可以是水或者醇类等易于吸收双氧水的溶液；对于ITO或者Al的刻蚀液，吸收液可以是碱性的溶液，如氢氧化钠溶液等。
当然，倾斜坡道在该气雾吸收装置7中并不是必须的。在本申请的另外实施例中，如图5所示，该气雾吸收装置7可以仅仅通过喷淋管9的喷淋(经由多个喷嘴10)在空中形成水帘，以实现对气雾的阻隔作用。另外，在底部具有排液装置10以将喷淋的液体排出。
在可选的实施例中，该排液装置11可连接到基板处理设备中的清洗区间中的清洗管道，以利用排出的吸收液(例如水)对基板进行清洗。这可更加经济。
在一些实施例中，在缓冲区间的底部设置有排气装置15。而该气雾吸收装置7位于排气装置15和刻蚀区间的基板入口1之间。这一布置可以吸引更多气雾与气雾吸收装置7接触，从而进一步增大气雾吸收效果。
在另一些实施例中，该气雾吸收装置7中的供液管9可以连接到多个供液源，该多个供液源可以分别容纳用于针对不同的刻蚀液气雾的吸收液。由此可以根据当前基板处理设备正在使用的刻蚀液来调节供应给供液管9的吸收液种类，提高了基板处理设备的适应性。
以上描述了本申请的具体实施方式，但本申请的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本申请揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本申请的保护范围之内。因此，本申请的保护范围应以所述权利要求的保护范围为准。
在本申请的描述中，需要理解的是，术语“上”、“下”、“内”、 “外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。措词‘包括’并不排除在权利要求未列出的元件或步骤的存在。元件前面的措词‘一’或‘一个’并不排除多个这样的元件的存在。在相互不同从属权利要求中记载某些措施的简单事实不表明这些措施的组合不能被用于改进。在权利要求中的任何参考符号不应当被解释为限制范围。

Claims (17)

  1. 一种基板处理设备，包括刻蚀区间，其中，所述设备包括被布置在刻蚀区间的基板入口外的一个或多个气雾吸收装置，所述气雾吸收装置包括一个或多个喷淋管。
  2. 根据权利要求1所述的设备，其中所述喷淋管被布置为喷淋吸收液以使吸收液与气雾接触。
  3. 根据权利要求2所述的设备，其中所述气雾吸收装置还包括供液管、排液装置和布置在所述喷淋管上的多个喷嘴。
  4. 根据权利要求3所述的设备，其中被布置在同一个喷淋管上的多个喷嘴之间的间距在10-50mm的范围内。
  5. 根据权利要求3所述的设备，其中所述喷嘴的出射方向是在相对于水平面向下15到向下45度之间可调的。
  6. 根据权利要求2所述的设备，其中所述气雾吸收装置还包括具有倾斜坡道的倾斜槽，所述吸收液被喷出之后经过所述倾斜坡道到达所述排液装置。
  7. 根据权利要求6所述的设备，其中所述倾斜槽的开口朝向所述刻蚀区间的基板入口。
  8. 根据权利要求6所述的设备，其中所述倾斜坡道由平面坡道或波浪形坡道形成。
  9. 根据权利要求1所述的设备，其中所述基板处理设备还包括用于传送待处理基板的传送装置，所述气雾吸收装置被布置在所述传送装置下方。
  10. 根据权利要求1至9中的任一项所述的设备，还包括大气压等离子表面处理区间，所述气雾吸收装置进一步位于用于连接所述大气压等离子表面处理区间和所述刻蚀区间的缓冲区间处。
  11. 根据权利要求9所述的设备，还包括排气罩，所述排气罩被布置在所述传送装置的上方并且在所述气雾吸收装置的上方。
  12. 根据权利要求2所述的设备，其中所述吸收液为水或醇类液体或碱性溶液。
  13. 根据权利要求4所述的设备，其中所述供液管经由阀门连接到多个供液源，所述多个供液源分别容纳不同种类的吸收液。
  14. 根据权利要求4所述的设备，其中所述基板处理设备还包括清洗区间，并且所述排液装置经由阀门连接到所述清洗区间中的管道。
  15. 根据权利要求10所述的设备，还包括被布置在所述大气压等离子表面处理区间的出口处的多个气刀。
  16. 根据权利要求15所述的设备，其中所述气刀供有压力大小可调的清洁干燥气体。
  17. 根据权利要求10所述的设备，其中所述缓冲区间的底部设置有排气装置，并且气雾吸收装置位于所述排气装置和刻蚀区间的基板入口之间。
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