WO2017193598A1 - Low-temperature sintered thick film paste applied to pi film and method for preparing same - Google Patents

Abstract

A low-temperature sintered thick film paste applied to PI films. The thick film paste comprises a bonding phase, an organic carrier, lanthanum oxide or yttrium oxide, and high purity nano silver powders. The bonding phase is composed of Bi₂O₃, SiO₂, and Al₂O₃. The organic carrier is composed of a solvent mixture, a thickening agent, a thixotropic agent, and a defoaming agent, and the solvent mixture is formed by mixing a solvent and PVB. The thick film paste has the advantages of low sintering temperature, short sintering time, low resistance value, good adhesion and good weldability. A method for preparing the low-temperature sintered thick film paste applied to PI films. The preparation method includes the steps of: a, preparing the bonding phase; b, preparing the organic carrier; c, the bonding phase, the organic carrier, the high-purity nano-silver powders, and lanthanum oxide or yttrium oxide being mixed, milled, and sieved to obtain the thick film paste.

Description

 Low-temperature sintering thick film slurry applied to PI film and preparation method thereof

Technical field

The invention relates to the technical field of electronic materials, in particular to a low-temperature sintering thick film slurry applied to a PI film and a preparation method thereof.

Background technique

The circuit slurry is a basic material for manufacturing a thick film component, and is a paste which is uniformly mixed by a solid powder and an organic solvent through three-roll rolling (can be associated with a toothpaste, a paint, etc.); wherein, depending on the use, The circuit slurry can be divided into a dielectric paste, a resistive paste and a conductor paste: according to the type of the substrate, the circuit paste can be further divided into a ceramic substrate, a polymer substrate, a glass substrate, a metal insulating substrate circuit. Slurry, etc.; according to the different sintering temperatures, the circuit slurry can be divided into high temperature, medium temperature and low temperature drying circuit slurry; according to different uses, the circuit slurry can be divided into general circuit slurry (making a general thickness Membrane circuit) and special circuit slurry (stainless steel substrate circuit slurry, thermistor paste); according to the price of the conductive phase, the circuit slurry can be divided into precious metal circuit paste (silver palladium, lanthanum and gold paste, etc.) And bismuth metal circuit slurry (molybdenum manganese slurry).

There are various circuit paste products in the prior art; however, for the existing circuit paste products, it is difficult to have low sintering temperature, short sintering time, low resistance value, good adhesion, and the like. Good comprehensive properties of weldability.

Summary of the invention

The object of the present invention is to provide a low-temperature sintering thick film slurry applied to a PI film in view of the deficiencies of the prior art, and the low-temperature sintering thick film paste applied to the PI film has the following advantages: 1. The thick film paste It is a nano-scale rare earth conductive heating slurry with a maximum particle size of <1 μm; 2. a lower sintering temperature and a sintering temperature of 400 ° C to 500 ° C; 3. a shorter sintering time and a peak sintering time of 10 Min-30min; 4, has a low square resistance, square resistance value is 5mΩ / □ -200 MΩ / □; 5, can achieve low temperature sintering of resistive paste on flexible substrate; 6, good adhesion and good solderability, no cracks and pinholes; 7, high heat intensity, per square centimeter Up to 20 watts.

Another object of the present invention is to provide a method for preparing a low-temperature sintered thick film slurry applied to a PI film, which can be efficiently produced by preparing a low-temperature sintering thick film slurry for a PI film. .

In order to achieve the above object, the present invention is achieved by the following technical solutions.

 A low-temperature sintering thick film slurry applied to a PI film, comprising the following parts by weight, specifically:

Bonding phase 10%-40%

Organic carrier 10%-30%

Cerium oxide or cerium oxide 1%-5%

High purity nano silver powder 45%-75%;

The binder phase is a low-temperature sintered glass powder, the particle size of the low-temperature sintered glass powder is 500 nm to 800 nm, the melting temperature of the low-temperature sintered glass powder is less than 400 ° C, and the low-temperature sintered glass powder is composed of Bi ₂ O ₃ and SiO _{2 .} And Al ₂ O ₃ three materials, the low-temperature sintered glass powder Bi ₂ O ₃ , SiO ₂ , Al ₂ O ₃ three parts of the weight of the order of 20% -40%, 40% -50%, 10% - 30%;

The organic carrier is composed of a solvent mixture, a thickener, a thixotropic agent, an antifoaming agent, a solvent mixture, a thickener, a thixotropic agent and an antifoaming agent in an organic carrier, and the weight of the four materials is 90%-95%, 1 %-5%, 0.5%-3%, 0.5%-2%, the solvent mixture is prepared by mixing solvent and PVB. The solvent and PVB materials in the solvent mixture are 50%-70% and 30%, respectively. 50%.

Wherein the solvent is diethylene glycol butyl ether acetate, dimethyl adipate, terpineol or DBE.

Wherein the thickener is an oxidized polyethylene wax.

Wherein the thixotropic agent is a polyamide wax.

Wherein, the antifoaming agent is a mixture of hydrophobically modified silica and mineral oil.

Wherein, the high-purity nano silver powder has a particle diameter of 200 nm to 800 nm.

A preparation method of a low-temperature sintering thick film slurry applied to a PI film, comprising the following process steps, specifically:

a. Preparation of binder phase: the low-temperature molten glass powder is ground in a star ball mill for 10 hours to 12 hours, and the low-temperature molten glass powder after grinding by a star ball mill passes through a 1000-mesh ultrasonic vibrating sieve to obtain a particle diameter of 500 nm. -800 nm of low temperature molten glass powder melted within 400 ° C, wherein the low temperature molten glass powder is composed of Bi ₂ O ₃ , SiO ₂ , Al ₂ O ₃ materials, and low temperature sintered glass powder Bi ₂ O ₃ , SiO ₂ The weight fraction of the three materials of Al ₂ O ₃ is 20%-40%, 40%-50%, 10%-30%, respectively;

b. Preparation of organic carrier: Dissolve solvent and PVB in a water bath at 60 ° C - 80 ° C for 2 hours to 5 hours in a dispersing machine. After the dispersion is completed, a homogeneous solvent mixture is obtained, and the weight of the solvent and PVB materials in the solvent mixture is obtained. The order is 50%-70%, 30%-50%; after the preparation of the solvent mixture is completed, the solvent mixture, the thickener, the thixotropic agent, the antifoaming agent are placed in a water bath at 60 ° C - 80 ° C with a dispersing machine Disperse for 1-3 hours to obtain an organic carrier. The weight ratio of the solvent mixture, thickener, thixotropic agent and antifoaming agent in the organic carrier is 90%-95%, 1%-5%, 0.5%. -3%, 0.5%-2%;

c. The binder phase, the organic carrier, the high-purity nano silver powder, the cerium oxide or the cerium oxide are mixed and ground in a three-roll mill for 10-15 times, and after grinding, pass through a 800 mesh sieve to obtain a thick film having a fineness of <1 μm. Slurry, high purity nano silver powder has a particle size of 200 At nm-800 nm, the weight fraction of each component in the thick film slurry is:

Bonding phase 10%-40%

Organic carrier 10%-30%

Cerium oxide or cerium oxide 1%-5%

High purity nano silver powder 45%-75%.

Wherein, the viscosity of the organic vehicle is 80 dPa•s -100 dPa•s.

Wherein, the thick film paste has a viscosity of 500 dPa•s-800 dPa•s.

The invention has the beneficial effects that the low-temperature sintering thick film slurry applied to the PI film according to the invention comprises the following parts by weight: bonding phase 10%-40%, organic carrier 10%-30 %, yttrium oxide or yttrium oxide 1%-5%, high-purity nano silver powder 45%-75%; binder phase is low-temperature sintered glass powder and the particle size is 500 nm -800 nm, the melting temperature of low-temperature sintered glass powder is less than 400 ° C, low temperature sintered glass powder consists of 20%-40% by weight of Bi ₂ O ₃ , 40%-50% SiO ₂ , 10%-30% Al ₂ O ₃ ; organic carrier from solvent mixture, increase Thickener, thixotropic agent, antifoaming agent, organic solvent, solvent mixture, thickener, thixotropic agent, antifoaming agent, the weight of the four materials in the order of 90%-95%, 1%-5%, 0.5% -3%, 0.5% - 2%, the solvent mixture is prepared by mixing a solvent with PVB, and the solvent and PVB materials in the solvent mixture are 50%-70% and 30%-50%, respectively. The low-temperature sintering thick film slurry applied to the PI film has the following advantages: 1. The thick film slurry is a nano-scale rare earth conductive heating slurry, the maximum particle size of the particles is <1 μm; 2. The sintering temperature is lower, sintering The temperature is between 400 ° C and 500 ° C; 3, the sintering time is short, the sintering peak time is 10 min-30 min; 4, has a lower square resistance, the square resistance value is 5 mΩ / □ -200 mΩ / □; 5, can achieve resistance Low temperature sintering of the slurry on the flexible substrate; 6, good adhesion and good solderability, no cracks and pinholes; 7, high heat generation, up to 20 watts per square centimeter.

Another advantageous effect of the present invention is the preparation method of the low-temperature sintering thick film slurry applied to the PI film according to the present invention, which comprises the following process steps, specifically:

a. Preparation of binder phase: the low-temperature molten glass powder is ground in a star ball mill for 10 hours to 12 hours, and the low-temperature molten glass powder after grinding by a star ball mill passes through a 1000-mesh ultrasonic vibrating sieve to obtain a particle diameter of 500 nm. -800 nm of low temperature molten glass powder melted within 400 ° C, wherein the low temperature molten glass powder is composed of Bi ₂ O ₃ , SiO ₂ , Al ₂ O ₃ materials, and low temperature sintered glass powder Bi ₂ O ₃ , SiO ₂ The weight fraction of the three materials of Al ₂ O ₃ is 20%-40%, 40%-50%, 10%-30%, respectively;

b. Preparation of organic carrier: Dissolve solvent and PVB in a water bath at 60 ° C - 80 ° C for 2 hours to 5 hours in a dispersing machine. After the dispersion is completed, a homogeneous solvent mixture is obtained, and the weight of the solvent and PVB materials in the solvent mixture is obtained. The order is 50%-70%, 30%-50%; after the preparation of the solvent mixture is completed, the solvent mixture, the thickener, the thixotropic agent, the antifoaming agent are placed in a water bath at 60 ° C - 80 ° C with a dispersing machine Disperse for 1-3 hours to obtain an organic carrier. The weight ratio of the solvent mixture, thickener, thixotropic agent and antifoaming agent in the organic carrier is 90%-95%, 1%-5%, 0.5%. -3%, 0.5%-2%;

c. The binder phase, the organic carrier, the high-purity nano silver powder, the cerium oxide or the cerium oxide are mixed and ground in a three-roll mill for 10-15 times, and after grinding, pass through a 800 mesh sieve to obtain a thick film having a fineness of <1 μm. Slurry, high purity nano silver powder has a particle size of 200 At nm-800 nm, the weight fraction of each component in the thick film slurry is:

Bonding phase 10%-40%

Organic carrier 10%-30%

Cerium oxide or cerium oxide 1%-5%

High purity nano silver powder 45%-75%;

Through the above process step design, the preparation method of the low-temperature sintering thick film slurry applied to the PI film can efficiently produce the above thick film slurry.

detailed description

The invention will now be described in connection with specific embodiments.

Embodiment 1 A low-temperature sintering thick film slurry applied to a PI film, comprising the following parts by weight, specifically:

Bonding phase 20%

Organic carrier 25%

Cerium oxide or antimony oxide 5%

High purity nano silver powder 60%;

The binder phase is a low-temperature sintered glass powder, the particle size of the low-temperature sintered glass powder is 500 nm to 800 nm, the melting temperature of the low-temperature sintered glass powder is less than 400 ° C, and the low-temperature sintered glass powder is composed of Bi ₂ O ₃ and SiO _{2 .} And Al ₂ O ₃ three materials, the low temperature sintered glass powder Bi ₂ O ₃ , SiO ₂ , Al ₂ O ₃ three parts of the weight of the order of 25%, 50%, 25%;

The organic carrier is composed of a solvent mixture, a thickener, a thixotropic agent, an antifoaming agent, a solvent mixture, a thickener, a thixotropic agent and an antifoaming agent in an organic carrier, and the weight fraction of the four materials is 90%, 5%, and 3, respectively. %, 2%, solvent mixture is prepared by mixing solvent and PVB. The solvent and PVB materials in the solvent mixture are 50% and 50% by weight.

Wherein, the solvent is diethylene glycol butyl ether acetate, dimethyl adipate, terpineol or DBE, the thickener is oxidized polyethylene wax, the thixotropic agent is polyamide wax, and the antifoaming agent is hydrophobically modified. A mixture of silica and mineral oil, the particle size of the high purity nanosilver is 200. Nm - 800 nm.

Through the above material ratio, the low-temperature sintering thick film slurry applied to the PI film of the first embodiment has the following advantages: 1. The thick film slurry is a nano-scale rare earth conductive heating slurry, and the maximum particle diameter of the particles is <1 μm; 2, there is a lower sintering temperature, the sintering temperature is between 400 ° C -500 ° C; 3, the sintering time is short, the sintering peak time is 10 Min-30min; 4, has a low square resistance, square resistance value is 5mΩ / □ -200 MΩ / □; 5, can achieve low temperature sintering of resistive paste on flexible substrate; 6, good adhesion and good solderability, no cracks and pinholes; 7, high heat intensity, per square centimeter Up to 20 watts.

It should be further noted that the low-temperature sintering thick film slurry applied to the PI film of the first embodiment can be produced by the following preparation method, and specifically, a method for preparing a low-temperature sintering thick film slurry applied to the PI film, It includes the following process steps, specifically:

a. Preparation of binder phase: the low-temperature molten glass powder is ground in a star ball mill for 10 hours to 12 hours, and the low-temperature molten glass powder after grinding by a star ball mill passes through a 1000-mesh ultrasonic vibrating sieve to obtain a particle diameter of 500 nm. -800 nm of low temperature molten glass powder melted within 400 ° C, wherein the low temperature molten glass powder is composed of Bi ₂ O ₃ , SiO ₂ , Al ₂ O ₃ materials, and low temperature sintered glass powder Bi ₂ O ₃ , SiO 2 The parts by weight of the three materials of Al ₂ O ₃ are 25%, 50% and 25%, respectively;

b. Preparation of organic carrier: Dissolve solvent and PVB in a water bath at 60 ° C - 80 ° C for 2 hours to 5 hours in a dispersing machine. After the dispersion is completed, a homogeneous solvent mixture is obtained, and the weight of the solvent and PVB materials in the solvent mixture is obtained. The parts are 50% and 50% in sequence; after the preparation of the solvent mixture is completed, the solvent mixture, the thickener, the thixotropic agent and the antifoaming agent are placed in a water bath at 60° C. to 80° C. and dispersed in a dispersing machine for 1-3 hours. Obtain an organic carrier and the viscosity of the organic carrier is 80 dPa•s -100 dPa•s, the weight ratio of the solvent mixture, the thickener, the thixotropic agent and the defoaming agent in the organic carrier is 90%, 5%, 3%, 2%;

c. mixing the binder phase, the organic carrier, the high-purity nano silver powder, the cerium oxide or the cerium oxide in a three-roll mill for 10-15 times, grinding through a 800 mesh sieve to obtain a fineness <1 μm and a viscosity of 500 The thick film slurry of dPa•s-800dPa•s, the particle size of the high-purity nano silver powder is 200 nm -800 nm, and the weight fraction of each component in the thick film slurry is:

Bonding phase 20%

Organic carrier 25%

Cerium oxide or antimony oxide 5%

High purity nano silver powder 60%.

Through the above process step design, the method for preparing the low-temperature sintered thick film slurry applied to the PI film can effectively produce the low-temperature sintered thick film slurry applied to the PI film of the first embodiment.

Embodiment 2, a low-temperature sintering thick film slurry applied to a PI film, comprising the following parts by weight, specifically:

Bonding phase 13%

Organic carrier 15%

Cerium oxide or cerium oxide 2%

High purity nano silver powder 70%;

The binder phase is a low-temperature sintered glass powder, the particle size of the low-temperature sintered glass powder is 500 nm to 800 nm, the melting temperature of the low-temperature sintered glass powder is less than 400 ° C, and the low-temperature sintered glass powder is composed of Bi ₂ O ₃ and SiO _{2 .} And Al ₂ O ₃ three materials, the low temperature sintered glass powder Bi ₂ O ₃ , SiO2, Al2O3 three parts of the weight of the order of 30%, 40%, 30%;

The organic carrier is composed of a solvent mixture, a thickener, a thixotropic agent, an antifoaming agent, a solvent mixture, a thickener, a thixotropic agent and an antifoaming agent in an organic carrier, and the weight fraction of the four materials is 95%, 2%, and 1.5, respectively. %, 1.5%, the solvent mixture is prepared by mixing solvent and PVB, and the solvent and PVB materials in the solvent mixture are 70% and 30%, respectively.

Wherein, the solvent is diethylene glycol butyl ether acetate, dimethyl adipate, terpineol or DBE, the thickener is oxidized polyethylene wax, the thixotropic agent is polyamide wax, and the antifoaming agent is hydrophobically modified. A mixture of silica and mineral oil, the particle size of the high purity nanosilver is 200. Nm - 800 nm.

Through the above material ratio, the low-temperature sintering thick film slurry applied to the PI film of the second embodiment has the following advantages: 1. The thick film slurry is a nano-scale rare earth conductive heating slurry, and the maximum particle size of the particles is <1 μm; 2, there is a lower sintering temperature, the sintering temperature is between 400 ° C -500 ° C; 3, the sintering time is short, the sintering peak time is 10 Min-30min; 4, has a low square resistance, square resistance value is 5mΩ / □ -200 MΩ / □; 5, can achieve low temperature sintering of resistive paste on flexible substrate; 6, good adhesion and good solderability, no cracks and pinholes; 7, high heat intensity, per square centimeter Up to 20 watts.

It should be further noted that the low-temperature sintering thick film slurry applied to the PI film of the second embodiment can be produced by the following preparation method, and specifically, a method for preparing a low-temperature sintering thick film slurry applied to the PI film, It includes the following process steps, specifically:

a. Preparation of binder phase: the low-temperature molten glass powder is ground in a star ball mill for 10 hours to 12 hours, and the low-temperature molten glass powder after grinding by a star ball mill passes through a 1000-mesh ultrasonic vibrating sieve to obtain a particle diameter of 500 nm. -800 nm of low temperature molten glass powder melted within 400 ° C, wherein the low temperature molten glass powder is composed of Bi ₂ O ₃ , SiO ₂ , Al ₂ O ₃ materials, and low temperature sintered glass powder Bi ₂ O ₃ , SiO ₂ The weight fraction of the three materials of Al ₂ O ₃ is 30%, 40%, 30%;

b. Preparation of organic carrier: Dissolve solvent and PVB in a water bath at 60 ° C - 80 ° C for 2 hours to 5 hours in a dispersing machine. After the dispersion is completed, a homogeneous solvent mixture is obtained, and the weight of the solvent and PVB materials in the solvent mixture is obtained. The order is 70%, 30%; after the preparation of the solvent mixture is completed, the solvent mixture, the thickener, the thixotropic agent, the antifoaming agent are placed in a water bath at 60 ° C - 80 ° C and dispersed in a dispersing machine for 1-3 hours. Obtain an organic carrier and the viscosity of the organic carrier is 80 dPa•s -100 dPa•s, the weight ratio of the solvent mixture, thickener, thixotropic agent and antifoaming agent in the organic carrier is 95%, 2%, 1.5%, 1.5%;

c. mixing the binder phase, the organic carrier, the high-purity nano silver powder, the cerium oxide or the cerium oxide in a three-roll mill for 10-15 times, grinding through a 800 mesh sieve to obtain a fineness <1 μm and a viscosity of 500 The thick film slurry of dPa•s-800dPa•s, the particle size of the high-purity nano silver powder is 200 nm -800 nm, and the weight fraction of each component in the thick film slurry is:

Bonding phase 13%

Organic carrier 15%

Cerium oxide or cerium oxide 2%

High purity nano silver powder 70%.

Through the above process step design, the preparation method of the low-temperature sintering thick film slurry applied to the PI film can effectively produce the low-temperature sintered thick film slurry applied to the PI film of the second embodiment.

Embodiment 3, a low-temperature sintering thick film slurry applied to a PI film, comprising the following parts by weight, specifically:

Bonding phase 30%

Organic carrier 19%

Antimony oxide or antimony oxide 1%

High purity nano silver powder 50%;

The binder phase is a low-temperature sintered glass powder, the particle size of the low-temperature sintered glass powder is 500 nm to 800 nm, the melting temperature of the low-temperature sintered glass powder is less than 400 ° C, and the low-temperature sintered glass powder is composed of Bi ₂ O ₃ and SiO _{2 .} And Al ₂ O ₃ three materials, the low temperature sintered glass powder Bi ₂ O ₃ , SiO ₂ , Al ₂ O ₃ three parts of the weight of the order of 40%, 50%, 10%;

The organic vehicle comprises 92%, 4%, 2 parts by weight of the solvent mixture, the thickener, the thixotropic agent, the antifoaming agent, the solvent mixture, the thickener, the thixotropic agent and the antifoaming agent in the organic carrier. %, 2%, solvent mixture is prepared by mixing solvent and PVB. The solvent and PVB materials in the solvent mixture are 70% and 30%, respectively.

Wherein, the solvent is diethylene glycol butyl ether acetate, dimethyl adipate, terpineol or DBE, the thickener is oxidized polyethylene wax, the thixotropic agent is polyamide wax, and the antifoaming agent is hydrophobically modified. A mixture of silica and mineral oil, the particle size of the high purity nanosilver is 200. Nm - 800 nm.

The low-temperature sintering thick film slurry applied to the PI film of the third embodiment has the following advantages by the above material ratio: 1. The thick film slurry is a nano-scale rare earth conductive heating slurry, and the maximum particle diameter is <1 μm; 2, there is a lower sintering temperature, the sintering temperature is between 400 ° C -500 ° C; 3, the sintering time is short, the sintering peak time is 10 Min-30min; 4, has a low square resistance, square resistance value is 5mΩ / □ -200 MΩ / □; 5, can achieve low temperature sintering of resistive paste on flexible substrate; 6, good adhesion and good solderability, no cracks and pinholes; 7, high heat intensity, per square centimeter Up to 20 watts.

It should be further noted that the low-temperature sintering thick film slurry applied to the PI film of the third embodiment can be produced by the following preparation method, and specifically, a method for preparing a low-temperature sintering thick film slurry applied to the PI film, It includes the following process steps, specifically:

a. Preparation of binder phase: the low-temperature molten glass powder is ground in a star ball mill for 10 hours to 12 hours, and the low-temperature molten glass powder after grinding by a star ball mill passes through a 1000-mesh ultrasonic vibrating sieve to obtain a particle diameter of 500 nm. -800 nm of low temperature molten glass powder melted within 400 ° C, wherein the low temperature molten glass powder is composed of Bi ₂ O ₃ , SiO ₂ , Al ₂ O ₃ materials, and low temperature sintered glass powder Bi ₂ O ₃ , SiO ₂ The weight fraction of the three materials of Al ₂ O ₃ is 40%, 50%, and 10%, respectively;

b. Preparation of organic carrier: Dissolve solvent and PVB in a water bath at 60 ° C - 80 ° C for 2 hours to 5 hours in a dispersing machine. After the dispersion is completed, a homogeneous solvent mixture is obtained, and the weight of the solvent and PVB materials in the solvent mixture is obtained. The order is 70%, 30%; after the preparation of the solvent mixture is completed, the solvent mixture, the thickener, the thixotropic agent, the antifoaming agent are placed in a water bath at 60 ° C - 80 ° C and dispersed in a dispersing machine for 1-3 hours. Obtain an organic carrier and the viscosity of the organic carrier is 80 dPa•s -100 dPa•s, the weight ratio of the solvent mixture, the thickener, the thixotropic agent and the defoaming agent in the organic carrier is 92%, 4%, 2%, 2%;

c. mixing the binder phase, the organic carrier, the high-purity nano silver powder, the cerium oxide or the cerium oxide in a three-roll mill for 10-15 times, grinding through a 800 mesh sieve to obtain a fineness <1 μm and a viscosity of 500 The thick film slurry of dPa•s-800dPa•s, the particle size of the high-purity nano silver powder is 200 nm -800 nm, and the weight fraction of each component in the thick film slurry is:

Bonding phase 30%

Organic carrier 19%

Antimony oxide or antimony oxide 1%

High purity nano silver powder 50%.

Through the above process step design, the preparation method of the low-temperature sintering thick film slurry applied to the PI film can effectively produce the low-temperature sintered thick film slurry applied to the PI film of the third embodiment.

The above content is only a preferred embodiment of the present invention, and those skilled in the art will have a change in the specific embodiment and application scope according to the idea of the present invention. The content of the present specification should not be construed as the present invention. limits.

Claims (9)

1.  A low-temperature sintering thick film slurry applied to a PI film, which comprises the following parts by weight, specifically:

   Bonding phase 10%-40%

   Organic carrier 10%-30%

   Cerium oxide or cerium oxide 1%-5%

   High purity nano silver powder 45%-75%;

   The binder phase is a low-temperature sintered glass powder, the particle size of the low-temperature sintered glass powder is 500 nm to 800 nm, the melting temperature of the low-temperature sintered glass powder is less than 400 ° C, and the low-temperature sintered glass powder is composed of Bi ₂ O ₃ and SiO _{2 .} And Al ₂ O ₃ three materials, the low-temperature sintered glass powder Bi ₂ O ₃ , SiO ₂ , Al ₂ O ₃ three parts of the weight of the order of 20% -40%, 40% -50%, 10% - 30%;

   The organic carrier is composed of a solvent mixture, a thickener, a thixotropic agent, an antifoaming agent, a solvent mixture, a thickener, a thixotropic agent and an antifoaming agent in an organic carrier, and the weight of the four materials is 90%-95%, 1 %-5%, 0.5%-3%, 0.5%-2%, the solvent mixture is prepared by mixing solvent and PVB. The solvent and PVB materials in the solvent mixture are 50%-70% and 30%, respectively. 50%.
2. The low-temperature sintering thick film slurry applied to a PI film according to claim 1, wherein the solvent is diethylene glycol butyl ether acetate, dimethyl adipate, terpineol or DBE .
3. A low-temperature sintered thick film paste applied to a PI film according to claim 2, wherein the thickener is an oxidized polyethylene wax.
4. A low-temperature sintered thick film paste applied to a PI film according to claim 3, wherein the thixotropic agent is a polyamide wax.
5. A low-temperature sintered thick film paste applied to a PI film according to claim 4, wherein the antifoaming agent is a mixture of hydrophobically modified silica and mineral oil.
6. A low-temperature sintering thick film paste applied to a PI film according to claim 5, wherein the high-purity nano silver powder has a particle diameter of 200 nm - 800 Nm.
7. A method for preparing a low-temperature sintering thick film slurry applied to a PI film, comprising the following process steps, specifically:

   a. Preparation of binder phase: the low-temperature molten glass powder is ground in a star ball mill for 10 hours to 12 hours, and the low-temperature molten glass powder after grinding by a star ball mill passes through a 1000-mesh ultrasonic vibrating sieve to obtain a particle diameter of 500 nm. -800 nm of low temperature molten glass powder melted within 400 ° C, wherein the low temperature molten glass powder is composed of Bi ₂ O ₃ , SiO ₂ , Al ₂ O ₃ materials, and low temperature sintered glass powder Bi ₂ O ₃ , SiO ₂ The weight fraction of the three materials of Al ₂ O ₃ is 20%-40%, 40%-50%, 10%-30%, respectively;

   b. Preparation of organic carrier: Dissolve solvent and PVB in a water bath at 60 ° C - 80 ° C for 2 hours to 5 hours in a dispersing machine. After the dispersion is completed, a homogeneous solvent mixture is obtained, and the weight of the solvent and PVB materials in the solvent mixture is obtained. The order is 50%-70%, 30%-50%; after the preparation of the solvent mixture is completed, the solvent mixture, the thickener, the thixotropic agent, the antifoaming agent are placed in a water bath at 60 ° C - 80 ° C with a dispersing machine Disperse for 1-3 hours to obtain an organic carrier. The weight ratio of the solvent mixture, thickener, thixotropic agent and antifoaming agent in the organic carrier is 90%-95%, 1%-5%, 0.5%. -3%, 0.5%-2%;

   c. The binder phase, the organic carrier, the high-purity nano silver powder, the cerium oxide or the cerium oxide are mixed and ground in a three-roll mill for 10-15 times, and after grinding, pass through a 800 mesh sieve to obtain a thick film having a fineness of <1 μm. Slurry, high purity nano silver powder has a particle size of 200 At nm-800 nm, the weight fraction of each component in the thick film slurry is:

   Bonding phase 10%-40%

   Organic carrier 10%-30%

   Cerium oxide or cerium oxide 1%-5%

   High purity nano silver powder 45%-75%.
8. A method for preparing a low-temperature sintered thick film paste for use in a PI film according to claim 7, wherein the organic carrier has a viscosity of 80 dPa·s -100 dPa•s.
9. A method for preparing a low-temperature sintered thick film paste applied to a PI film according to claim 8, wherein the thick film paste has a viscosity of 500 dPa•s-800dPa•s.