WO2017193518A1 - 反应腔室及半导体加工设备 - Google Patents

反应腔室及半导体加工设备 Download PDF

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Publication number
WO2017193518A1
WO2017193518A1 PCT/CN2016/099022 CN2016099022W WO2017193518A1 WO 2017193518 A1 WO2017193518 A1 WO 2017193518A1 CN 2016099022 W CN2016099022 W CN 2016099022W WO 2017193518 A1 WO2017193518 A1 WO 2017193518A1
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Prior art keywords
reaction chamber
upper electrode
coil
electrode plate
chamber
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Ceased
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PCT/CN2016/099022
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English (en)
French (fr)
Inventor
李兴存
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Beijing NMC Co Ltd
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Beijing NMC Co Ltd
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Publication of WO2017193518A1 publication Critical patent/WO2017193518A1/zh
Priority to US16/183,964 priority Critical patent/US11715632B2/en
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/32119—Windows
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]

Definitions

  • the present invention relates to the field of semiconductor fabrication, and in particular to a reaction chamber and a semiconductor processing apparatus.
  • ICP sources Inductively Coupled Plasma (ICP) sources and Capacitively Coupled Plasma (hereinafter referred to as CCP). )source.
  • ICP source generates a plasma by exciting an electric field generated by a current through a coil, and the ICP source has the characteristics of high plasma density and small damage to the workpiece.
  • CCP source generates a plasma by the reaction gas applied to the electrode plate, and the CCP source has the characteristics of large area uniformity and high ion energy.
  • the current reaction chamber can only generate plasma by using the ICP source or the CCP source alone, which makes the plasma source of the same reaction chamber not selective, and limits the discharge window and the use range of the plasma source.
  • the present invention aims to at least solve one of the technical problems existing in the prior art, and proposes a reaction chamber and a semiconductor processing apparatus which can selectively generate plasma using different plasma sources, thereby expanding the plasma source. Discharge window and range of use.
  • a reaction chamber comprising an upper electrode device and a lower electrode device, the lower electrode device being disposed in the reaction chamber for carrying a workpiece to be processed.
  • the upper electrode device includes a dielectric cylinder, a coil, an upper power source, an upper electrode plate, a first selection switch, and a second selection switch, wherein the dielectric cylinder is a hollow cylindrical structure and is disposed at the a top of a chamber wall of the reaction chamber; the coil is disposed around the dielectric cylinder; the upper electrode plate is located above the lower electrode device; the first selector switch is for selectively enabling the upper a power source electrically coupled to the first end of the coil or electrically connecting the upper power source to the upper electrode plate; the second selector switch for selectively grounding the second end of the coil Or electrically connecting the second end of the coil to the upper electrode plate.
  • the first selection switch comprises a first transfer switch
  • the first transfer switch comprises a movable contact and two static contacts
  • the movable contact is connected to the upper power supply
  • one of the static contacts A first end of the coil is connected and another stationary contact is connected to the upper electrode plate.
  • the second selection switch comprises a second transfer switch
  • the second transfer switch comprises a movable contact and two stationary contacts
  • the movable contact is connected to the second end of the coil
  • one of the static switches The contact is grounded and another stationary contact is connected to the upper electrode plate.
  • the first selection switch includes: two independent switches for respectively connecting the circuit between the upper power source and the first end of the coil, and the upper RF power source and the On the circuit between the upper electrode plates; the switch control module is configured to selectively control the conduction and disconnection of the two independent switches.
  • the second selection switch comprises: two independent switches for respectively connecting on a circuit between the second end of the coil and the ground, and a second end connected to the upper electrode and the upper electrode On the circuit between the boards; the switch control module is configured to selectively control the conduction and disconnection of the two independent switches.
  • the independent switch comprises a relay, a diode or a radio frequency switch.
  • the upper electrode assembly further includes an electrode support, the electrode support and the upper electrode plate together enclose a top opening of the reaction chamber, and the electrode support comprises a first support portion and a second support unit.
  • the first support portion has a hollow cylindrical structure and surrounds the inner side of the medium tube at a distance from the medium tube; the coil is located at the medium tube and the first support portion
  • the upper electrode plate is fixed to the bottom of the first support portion and electrically insulated from the first support portion;
  • the second support portion has an annular plate shape The structure is grounded; and the inner edge of the second support portion is fixedly coupled to the top of the first support portion, and the outer edge of the second support portion is fixedly coupled to the chamber wall of the reaction chamber.
  • the reaction chamber further includes at least one central air inlet and a plurality of edge air inlets.
  • the at least one central air inlet is disposed on the upper electrode plate and communicates with an interior of the reaction chamber; the plurality of edge air inlets are along a circumference of the second support portion It is disposed on the second support portion and communicates with the interior of the reaction chamber.
  • the upper electrode plate has a vortex chamber having a cavity structure; the at least one central air inlet is disposed at a top chamber wall of the shimming chamber for conveying a reaction gas into the shimming chamber Providing a plurality of air outlet holes in the bottom chamber wall of the flow mixing chamber, and uniformly distributing the bottom surface of the flow mixing chamber for uniformly transferring the reaction gas in the flow mixing chamber to the Inside the reaction chamber.
  • the reaction chamber further comprises a gas source and a gas distribution device.
  • the gas source is for providing a reaction gas;
  • the gas distribution device is for distributing a reaction gas from the gas source to the central air inlet and/or each of the edge air inlets.
  • the dielectric cylinder, the upper electrode plate and a top wall of the reaction chamber collectively close a top opening of the reaction chamber; the upper electrode plate is disposed at a top of the dielectric cylinder; and The coil is located outside the media barrel.
  • the upper electrode plate has a vortex chamber having a cavity structure; at the top chamber wall of the shimming chamber, at least one air inlet is provided for conveying a reaction gas into the shimming chamber;
  • the bottom chamber wall of the flow mixing chamber is provided with a plurality of air outlet holes, and the plurality of air outlet holes are evenly distributed with respect to the bottom surface of the flow mixing chamber for uniformly conveying the reaction gas in the flow mixing chamber To the reaction chamber.
  • the reaction chamber further comprises a fixed capacitor or a tunable capacitor, and the fixed capacitor or the adjustable capacitor is connected to the circuit between the upper electrode plate and the ground.
  • the lower electrode device comprises a base, the base being disposed in the reaction chamber And grounded to carry the workpiece being machined.
  • the invention also provides a semiconductor processing apparatus comprising a reaction chamber, which can employ the reaction chamber of any of the above aspects of the invention.
  • the present invention provides a reaction chamber having an ICP source formed by coil discharge, a CCP source formed by discharge of an upper electrode plate, and an ICP-CCP source formed by co-discharging a coil and an upper electrode plate, and passing through a first selection switch and
  • the second selection switch can switch between three modes of ICP source, CCP source and ICP-CCP source, that is, selectively use different plasma sources to generate plasma, thereby expanding the discharge window of the plasma source and Use range.
  • the semiconductor processing apparatus provided by the present invention can selectively generate plasma using different plasma sources by using the reaction chamber provided by the present invention, thereby expanding the discharge window and the use range of the plasma source.
  • Figure 1 is a cross-sectional view showing a reaction chamber according to a first embodiment of the present invention
  • 2A is an equivalent diagram of the reaction chamber of FIG. 1 when using an ICP-CCP source process
  • 2B is an equivalent circuit diagram of the reaction chamber of FIG. 1 when a process is performed using an ICP-CCP source;
  • Figure 3 is a cross-sectional view of the upper electrode plate of Figure 1 taken along the axial direction thereof;
  • FIG. 4A is a cross-sectional view of a reaction chamber according to a second embodiment of the present invention.
  • FIG. 4B is an equivalent circuit diagram of the reaction chamber of FIG. 4A when the process is performed using an ICP-CCP source;
  • Figure 5 is a cross-sectional view showing a reaction chamber according to a third embodiment of the present invention.
  • Figure 6 is a cross-sectional view of a reaction chamber according to a fourth embodiment of the present invention.
  • the reaction chamber 100 includes an upper electrode device and a lower electrode device.
  • the lower electrode device is disposed in the reaction chamber 100 for carrying the workpiece to be processed by the workpiece.
  • the lower electrode device includes a susceptor 104 and is grounded.
  • the upper electrode device includes a dielectric can 102, a coil 105, an upper power source 107, an upper electrode plate 103, an electrode support, a first selection switch 108, and a second selection switch 109.
  • the electrode support comprises a first support portion 114 and a second support portion 115, which together with the upper electrode plate 103 enclose the top opening of the reaction chamber 100.
  • the medium cylinder 102 is a hollow cylindrical structure and is disposed at the top of the chamber wall of the reaction chamber 100.
  • the first support portion 114 also has a hollow cylindrical structure and is surrounded by the medium cylinder 102 at a certain distance.
  • the inner side of the barrel 102 is for fixing the upper electrode plate 103.
  • the coil 105 is disposed around the media barrel 102 and is located between the media barrel 102 and the first support portion 114.
  • the upper electrode plate 103 is fixed to the bottom of the first support portion 114 and is electrically insulated from the first support portion 114, and the projection on the bottom surface of the reaction chamber 100 overlaps with the projection of the susceptor 104.
  • the second support portion 115 is grounded, is a flat plate structure, and is annular, that is, the second support portion 115 is an annular plate-like structure; and the inner edge of the second support portion 115 is fixed to the top of the first support portion 114 The outer edge of the second support portion 115 is fixedly coupled to the chamber wall of the reaction chamber 100.
  • the first support portion 114 and the second support portion 115 are made of a conductive metal such as aluminum or stainless steel.
  • the second support portion 115 is fixed to the top region of the reaction chamber 100, and the first support portion 114 and the dielectric cylinder 102 are respectively fixed on the second support portion 115.
  • the plasma is mainly generated in the region sandwiched by the chamber wall of the reaction chamber 100 and the medium cylinder 102, and the projection of the region on the bottom surface of the reaction chamber 100 is at The edge region of the bottom surface is annular in shape.
  • the upper electrode plate 103 is discharged, it is equally
  • the daughter body mainly produces a region between the upper electrode plate 103 and the susceptor 104, and the projection of this region on the bottom surface of the reaction chamber 100 is in the central region of the bottom surface.
  • the first selection switch 108 is for selectively electrically connecting the upper power source 107 to one end of the coil 105 through the matcher 106, or electrically connecting the upper power source 107 to the upper electrode plate 103 through the matcher 106.
  • the second selection switch 109 is for selectively grounding the other end of the coil 105 or electrically connecting the other end of the coil 105 to the upper electrode plate 103.
  • the first selection switch 108 includes a first changeover switch including a movable contact and two stationary contacts, the movable contact being connected to the power source 107 via the matcher 106, one of which The stationary contact a is connected to one end of the coil 105, and the other stationary contact b is connected to the upper electrode plate 103.
  • the second selector switch 109 includes a second changeover switch including a movable contact and two stationary contacts, the movable contact being connected to the other end of the coil 105, wherein one of the stationary contacts c
  • the other electrode d is connected to the upper electrode plate 103 through the electrode support.
  • the upper power source 107 feeds the excitation power (low frequency power or radio frequency power) through the matcher 106 to the first selection switch 108 and the second selection switch 109, respectively.
  • the upper power source 107 and the upper electrode plate 103 are electrically connected. Connected and the coil 105 is grounded. In this case, the excitation power is separately fed into the upper electrode plate 103, and the reaction gas in the reaction chamber 100 is excited to form a plasma in a central region between the upper electrode plate 103 and the susceptor 104, that is, the upper electrode plate is used.
  • the CCP source formed by the discharge of 103 generates a plasma.
  • the upper power source 107 is electrically connected to one end of the coil 105, and The other end of the coil 105 is grounded.
  • the excitation power is fed separately into the coil 105 and at the annular edge between the dielectric cylinder 102 and the chamber wall of the reaction chamber 100.
  • the reaction gas in the region excitation reaction chamber 100 forms a plasma, that is, a plasma is generated using an ICP source formed by discharge of the coil 105.
  • the upper power source 107 is electrically connected to one end of the coil 105, and The other end of the coil 105 is electrically connected to the upper electrode plate 103.
  • the excitation power is simultaneously fed into the coil 105 and the upper electrode plate 103, and in the annular edge region between the dielectric cylinder 102 and the chamber wall of the reaction chamber 100, respectively, and the upper electrode plate 103 and the susceptor 104.
  • the central region between them excites the reaction gas in the reaction chamber 100 to form a plasma, that is, the ICP-CCP source formed by the common discharge of the coil 105 and the upper electrode plate 103 generates a plasma.
  • Figure 2A is an equivalent diagram of the reaction chamber of Figure 1 when using an ICP-CCP source process.
  • the alternating current from the upper power source 107 passes through the coil 105 and the upper electrode plate 103 in order, and the upper electrode plate 103 can be equivalently a capacitor connected between the coil 105 and the ground.
  • the ICP-CCP source formed by the co-discharge of the coil 105 and the upper electrode plate 103 can be compatible with both the electric field uniformity of the CCP source and the high plasma density of the ICP source.
  • the reaction chamber provided by the embodiment of the present invention can be applied to a PECVD device.
  • the ICP-CCP source can be used in the cleaning process, due to the ICP-CCP source.
  • the ICP-CCP source can be switched to the ICP source or CCP source according to specific needs to meet the requirements of the deposition process.
  • the pedestal 104 and the upper electrode plate 103 can generate a planar electric field during the process, since the strength of the electric field generated by the coil 105 is weakened by the dielectric cylinder 102, and the strength of the planar electric field is much higher than that generated by the coil 105.
  • the strength of the electric field therefore, the plate-type electric field plays a major role with respect to the electric field generated by the coil 105, so that the electric field due to the coil 105 can be reduced
  • the influence of the unevenness makes the density distribution of the formed plasma more uniform, thereby improving the uniformity of density distribution of the plasma.
  • FIG. 2B is an equivalent circuit diagram of the reaction chamber of FIG. 1 when the process is performed using an ICP-CCP source.
  • the dashed box represents the plasma equivalent model.
  • the plasma consists of a sheath and a plasma region, wherein the sheath can be equivalent to a capacitor and a diode structure; the plasma region can be equivalent to a resistive and inductive structure.
  • L is the equivalent inductance formed by the current of the plasma.
  • R is the plasma equivalent resistance.
  • C1 is the first sheath capacitance formed between the upper electrode plate 103 and the plasma sheath.
  • C2 is a collecting capacitance formed between the upper electrode plate 103 and the ground.
  • C3 is the second sheath capacitance formed between the susceptor 104 and the plasma sheath.
  • a flat capacitor structure can be formed between the upper electrode plate 103 and the ground, and the distributed capacitance C2 and the first sheath capacitance C1 are simultaneously formed.
  • the first sheath capacitor C1 can function to adjust the phase of the radio frequency current of the coil 105, so that the first sheath capacitor C1 can be adjusted in real time by controlling the process conditions such as the plasma ignition parameter.
  • the phase difference between the both ends of the small coil 105 can further improve the uniformity of the electric field generated by the coil 105, thereby improving the uniformity of density distribution of the plasma.
  • the reaction chamber provided by the embodiment of the present invention has an ICP source formed by discharge of the coil 105, a CCP source formed by discharge of the upper electrode plate 103, and an ICP formed by the common discharge of the coil 105 and the upper electrode plate 103.
  • ICP source formed by discharge of the coil 105
  • CCP source formed by discharge of the upper electrode plate 103
  • ICP formed by the common discharge of the coil 105 and the upper electrode plate 103.
  • - CCP source and by means of the first selection switch 108 and the second selection switch 109, switching between three modes of ICP source, CCP source and ICP-CCP source can be achieved, ie alternatively different plasma sources can be used
  • a plasma is generated so that the discharge window and the range of use of the plasma source can be expanded.
  • the reaction chamber 100 further includes at least one central air inlet 110 and a plurality of edge air inlets 111.
  • FIG. 3 is a cross-sectional view of the upper electrode plate of FIG. 1 taken along the axial direction thereof.
  • the upper electrode plate 103 has a turbulent cavity 1031 which has a cavity structure.
  • the top chamber wall of the shimming chamber 1031 is provided with at least one along the shimming chamber 1031 The axial direction penetrates the inlet port 110 of the top chamber wall for conveying the reaction gas into the uniform flow chamber 1031.
  • the bottom chamber wall of the vortex chamber 1031 is provided with a plurality of air outlet holes 1032 extending through the bottom chamber wall, and the air outlet holes 1032 are evenly distributed with respect to the bottom surface of the shimming chamber 1031 for uniformly averaging the cavity 1031.
  • the reaction gas inside is supplied to a central region in the reaction chamber 100 between the upper electrode plate 103 and the susceptor 104.
  • a plurality of edge air inlets 111 are disposed on the second support portion 115 along the circumferential direction of the second support portion 115, and communicate with the interior of the reaction chamber 100 for uniformly delivering the reaction gas to the reaction chamber.
  • the reaction gas When the process is performed, the reaction gas first enters into the merging chamber 1031 via the above-mentioned air inlet 110, and diffuses to the periphery, achieving uniform distribution throughout the merging chamber 1031, and then uniformly flows into the reaction chamber through the respective vent holes 1032. Within 100. The flow of the reaction gas is indicated by an arrow in FIG.
  • the reaction chamber 100 further includes a gas source 113 for supplying a reaction gas, and a gas distribution device 112 for distributing the reaction gas from the gas source 113 to the central gas inlet 110 and / or each edge inlet 111, so that the reaction gas can be controlled to flow into the reaction chamber 100 from the corresponding inlet according to the plasma source currently used.
  • a gas source 113 for supplying a reaction gas
  • a gas distribution device 112 for distributing the reaction gas from the gas source 113 to the central gas inlet 110 and / or each edge inlet 111, so that the reaction gas can be controlled to flow into the reaction chamber 100 from the corresponding inlet according to the plasma source currently used.
  • a shield cover 116 is further disposed above the electrode support member, and the shield cover 116 is grounded.
  • the shield cover 116 can shield the electromagnetic field generated by the coil 105 and/or the upper electrode plate 103, thereby avoiding radio frequency.
  • the RF radiation generated by the power supply when feeding power affects the process.
  • the first selection switch 108 and the second selection switch 109 are all conversion switches, but the present invention is not limited thereto. In practical applications, the first selection switch 108 and/or the first The two selector switches 109 can also employ electronic switches consisting of two independent switches and switch control modules, such as relays, diodes or RF switches.
  • the switch control module is used to selectively control the conduction of the two independent switches And disconnecting, thereby selectively connecting the upper power source to the first end of the coil or electrically connecting the upper power source to the upper electrode plate.
  • the switch control module is configured to selectively control the conduction and disconnection of the two independent switches, thereby selectively grounding the second end of the coil, or making the coil
  • the two ends are electrically connected to the upper electrode plate.
  • the upper electrode plate 103 has a cavity 1031 of a cavity structure, but the present invention is not limited thereto. In practical applications, the upper electrode plate 103 may also adopt a solid plate. In this case, at least one central air inlet 110 is disposed on the flat plate and directly communicates to the inside of the reaction chamber 100.
  • the bias generated on the surface of the workpiece to be processed placed on the susceptor 104 can be reduced, thereby avoiding the use of the CCP source or the ICP-CCP source for the process.
  • the film deposited on the surface of the workpiece to be processed is defective or damaged.
  • the susceptor 104 can also be electrically connected to the RF power source according to specific needs.
  • FIG. 4A is a cross-sectional view of a reaction chamber provided by a second embodiment of the present invention.
  • a second embodiment of the present invention is a modification of the first embodiment described above.
  • the modified embodiment is different from the first embodiment described above in that the reaction chamber 100 further includes a fixed capacitor 117.
  • Capacitor 117 is connected in series between upper electrode plate 103 and ground. Specifically, one end of the fixed capacitor 117 is connected to the electrode plate 103, and the other end is grounded through the electrode support.
  • Figure 4B is the equivalent of the reaction chamber of Figure 4A when using the ICP-CCP source Circuit diagram.
  • C4 is a fixed capacitor, and the voltage of the coil 105 can be distributed to the first sheath capacitor C1 and the fixed capacitor C4, that is, the fixed capacitor C4 can function to divide the voltage across the coil 105 to The voltage difference between both ends of the coil 105 is reduced, so that the uniformity of the electric field generated by the coil 105 can be further improved.
  • the partial pressure of the fixed capacitor C4 it is also possible to prevent the upper electrode plate 103 from being ignited due to the excessive voltage at the output end of the coil 105.
  • the fixed capacitor C4 can be replaced by a tunable capacitor. Due to the adjustable capacitance, the voltage distribution across the coil 105 can be adjusted by adjusting the capacitance of the tunable capacitor to the circuit. In order to reduce the voltage difference between the two ends of the coil 105, not only can the uniformity of the electric field generated by the coil 105 be further improved, but also the flexibility of capacitance adjustment can be improved.
  • Figure 5 is a cross-sectional view of a reaction chamber according to a third embodiment of the present invention.
  • the reaction chamber provided in this embodiment differs from the first embodiment described above in that the structure of the upper electrode device is different.
  • the reaction chamber 200 includes an upper electrode device and a lower electrode device.
  • the lower electrode device is disposed in the reaction chamber 200 for carrying the workpiece to be processed.
  • the lower electrode device includes a susceptor 204 and is grounded.
  • the upper electrode device includes a dielectric can 202, a coil 205, an upper power source 207, a matcher 206, an upper electrode plate 203, a shield case 216, a first selection switch 208, and a second selection switch 209.
  • the dielectric cylinder 202 is a hollow cylindrical structure and is disposed at the top of the reaction chamber 200. Specifically, the dielectric cylinder 202 is disposed outside the reaction chamber 200 and supported by the top of the chamber wall, the top of the chamber wall The opening is housed inside the media barrel 202, with the top opening of the chamber wall allowing the space enclosed by the media barrel 202 to communicate with the cavity of the reaction chamber 200.
  • the upper electrode plate 203 has a flat shape and is disposed at the top of the dielectric can 202 to close the top opening of the dielectric can 202.
  • the dielectric cylinder 202, the upper electrode plate 203, and the top wall of the reaction chamber 200 collectively close the top opening of the reaction chamber 200, and the interior of the dielectric cylinder 202 and the reaction chamber 200
  • the interior is in communication such that the upper electrode plate 203, the dielectric cylinder 202, and the chamber walls of the reaction chamber 200 together form a closed process space.
  • the coil 205 is disposed around the outside of the medium cylinder 202.
  • the structure and function of other components in the upper electrode device are similar to those of the corresponding components of the first embodiment described above, and will not be described herein.
  • the reaction chamber further includes an air inlet 210 and a gas source 213, wherein the air inlet 210 is disposed at a central position of the upper electrode plate 203 and communicates with the interior of the reaction chamber 200.
  • the reaction gas supplied from the gas source 213 enters the inside of the reaction chamber 200 via the gas inlet 210.
  • the number of the air inlets may be two or more, and is evenly distributed along the plane of the upper electrode plate for uniformly distributing the reaction gas into the reaction chamber 200.
  • the upper electrode plate 203 has a flat shape, but the present invention is not limited thereto.
  • the upper electrode plate may be configured to Structure with a uniform flow chamber.
  • at least one air inlet is provided at the top of the flow mixing chamber for conveying the reaction gas into the uniform flow chamber.
  • a plurality of air outlet holes are disposed at the bottom of the flow mixing chamber, and are evenly distributed with respect to the bottom surface of the flow mixing chamber for uniformly transferring the reaction gas in the flow mixing chamber into the reaction chamber.
  • the reaction gas first enters into the flow chamber through the at least one inlet port, and diffuses to the periphery to achieve uniform distribution throughout the flow chamber, and then uniformly flows into the reaction chamber through the respective outlet holes.
  • Figure 6 is a cross-sectional view of a reaction chamber according to a fourth embodiment of the present invention.
  • the fourth embodiment of the present invention is different from the third embodiment described above, except that the reaction chamber 200 further includes a fixed capacitor 217 connected between the upper electrode plate 203 and the ground. On the circuit. Specifically, the fixed capacitor 217 is grounded through the shield 216.
  • the fixed capacitor 217 can function to divide the voltage across the coil 205 to reduce the voltage difference between the ends of the coil 205, so that the coil 205 can be further improved.
  • the partial pressure of 217 can also prevent the upper electrode plate 203 from being ignited due to the excessive voltage at the output end of the coil 205.
  • the fixed capacitor 217 can be replaced by a tunable capacitor. Because the capacitance is adjustable, the voltage distribution across the coil 205 can be adjusted by adjusting the magnitude of the tunable capacitor in the circuit. The voltage difference between the both ends of the coil 205 is reduced, so that not only the uniformity of the electric field generated by the coil 205 but also the flexibility of the capacitance adjustment can be improved.
  • the above various embodiments of the present invention provide a reaction chamber having an ICP source formed by coil discharge, a CCP source formed by discharge of the upper electrode plate, and an ICP-CCP formed by co-discharge of the coil and the upper electrode plate.
  • Source and by means of the first selection switch and the second selection switch, switching between three modes of ICP source, CCP source and ICP-CCP source can be achieved, ie, plasma can be selectively generated using different plasma sources, Thereby, the discharge window and the range of use of the plasma source can be enlarged.
  • an embodiment of the present invention further provides a semiconductor processing apparatus including a reaction chamber using the reaction chamber provided by the above various embodiments of the present invention.
  • the semiconductor processing apparatus provided by the embodiment of the present invention can selectively generate plasma by using different plasma sources by using the above reaction chamber provided by the embodiment of the present invention, thereby expanding the discharge window and the use range of the plasma source. .

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Abstract

一种反应腔室及半导体加工设备，反应腔室(100)包括上电极装置和下电极装置，下电极装置设置在反应腔室(100)内，用于承载被加工工件。上电极装置包括介质筒(102)、线圈(105)、上功率电源(107)、上电极板(103)、第一选择开关(108)和第二选择开关(109)。介质筒(102)为中空的筒状结构且设置在反应腔室(100)的腔室壁的顶部；线圈(105)围绕介质筒(102)设置；上电极板(103)位于下电极装置的上方；第一选择开关(108)用于选择性地使上功率电源(107)与线圈(105)的第一端电连接，或者使上功率电源(107)与上电极板(103)电连接；第二选择开关(109)用于选择性地使线圈(105)的第二端接地，或者使线圈(105)的第二端与上电极板(103)电连接。所述反应腔室及半导体加工设备，可选择地使用不同的等离子体源产生等离子体，从而可扩大等离子体源的放电窗口和使用范围。

Description

反应腔室及半导体加工设备 技术领域
本发明涉及半导体制造领域，具体地，涉及一种反应腔室及半导体加工设备。
背景技术
在半导体领域中，对于干法刻蚀工艺和薄膜沉积工艺，常用的等离子体源包括感应耦合等离子体(Inductively Coupled Plasma，以下简称ICP)源和容性耦合等离子体(Capacitively Coupled Plasma，以下简称CCP)源。其中，ICP源由电流通过线圈产生的电磁场激发反应气体产生等离子体，ICP源具有等离子体密度高、对工件损伤小等特点。CCP源由施加到电极板之间的电压激发反应气体产生等离子体，CCP源具有大面积均匀性好、离子能量高等特点。
但是，目前的反应腔室只能单独采用ICP源或者CCP源产生等离子体，这使得同一反应腔室的等离子体源不具有选择性，限制了等离子体源的放电窗口和使用范围。
发明内容
本发明旨在至少解决现有技术中存在的技术问题之一，提出了一种反应腔室及半导体加工设备，其可以可选择地使用不同的等离子体源产生等离子体，从而可以扩大等离子体源的放电窗口和使用范围。
为实现本发明的目的而提供一种反应腔室，包括上电极装置和下电极装置，所述下电极装置设置在所述反应腔室内，用于承载被加工工件。所述上电极装置包括介质筒、线圈、上功率电源、上电极板、第一选择开关和第二选择开关，其中，所述介质筒为中空的筒状结构且设置在所 述反应腔室的腔室壁的顶部；所述线圈围绕所述介质筒设置；所述上电极板位于所述下电极装置的上方；所述第一选择开关用于选择性地使所述上功率电源与所述线圈的第一端电连接，或者使所述上功率电源与所述上电极板电连接；所述第二选择开关用于选择性地使所述线圈的第二端接地，或者使所述线圈的第二端与所述上电极板电连接。
其中，所述第一选择开关包括第一转换开关，所述第一转换开关包括一个动触点和两个静触点，所述动触点连接所述上功率电源，且其中一个静触点连接所述线圈的第一端，另一个静触点连接所述上电极板。
其中，所述第二选择开关包括第二转换开关，所述第二转换开关包括一个动触点和两个静触点，所述动触点连接所述线圈的第二端，且其中一个静触点接地，另一个静触点连接所述上电极板。
其中，所述第一选择开关包括：两个独立开关，用于分别连接在所述上功率电源与所述线圈的第一端之间的电路上，以及连接在所述上射频电源与所述上电极板之间的电路上；所述开关控制模块，用于选择性地控制所述两个独立开关的导通和断开。
其中，所述第二选择开关包括：两个独立开关，用于分别连接在所述线圈的第二端与地之间的电路上，以及连接在所述线圈的第二端与所述上电极板之间的电路上；所述开关控制模块，用于选择性地控制所述两个独立开关的导通和断开。
其中，所述独立开关包括继电器、二极管或者射频开关。
其中，所述上电极组件还包括电极支撑件，所述电极支撑件和所述上电极板共同封闭所述反应腔室的顶部开口，且所述电极支撑件包括第一支撑部和第二支撑部。其中，所述第一支撑部呈中空的筒状结构，且与所述介质筒间隔一定距离地环绕在所述介质筒的内侧；所述线圈位于所述介质筒和所述第一支撑部之间；所述上电极板固定在所述第一支撑部的底部，且与所述第一支撑部电绝缘；所述第二支撑部呈环形的板状 结构，且接地；并且，所述第二支撑部的内边缘与所述第一支撑部的顶部固定连接，所述第二支撑部的外边缘与所述反应腔室的腔室壁固定连接。
其中，所述反应腔室还包括至少一个中心进气口和多个边缘进气口。其中，所述至少一个中心进气口设置在所述上电极板上，并与所述反应腔室的内部相连通；所述多个边缘进气口沿所述第二支撑部的周向而设置在所述第二支撑部上，并与所述反应腔室的内部相连通。
其中，所述上电极板具有呈空腔结构的匀流腔；所述至少一个中心进气口设置在所述匀流腔的顶部腔室壁，用以向所述匀流腔内输送反应气体；在所述匀流腔的底部腔室壁设置有多个出气孔，且相对于所述匀流腔的底面均匀分布，用以均匀地将所述匀流腔内的反应气体输送至所述反应腔室内。
其中，所述反应腔室还包括气源和气体分配装置。其中，所述气源用于提供反应气体；所述气体分配装置用于将来自所述气源的反应气体分配至所述中心进气口和/或各个边缘进气口。
其中，所述介质筒、所述上电极板和所述反应腔室的顶壁共同封闭所述反应腔室的顶部开口；所述上电极板设置在所述介质筒的顶部；并且，所述线圈位于所述介质筒的外侧。
其中，所述上电极板具有呈空腔结构的匀流腔；在所述匀流腔的顶部腔室壁设置有至少一个进气口，用以向所述匀流腔内输送反应气体；在所述匀流腔的底部腔室壁设置有多个出气孔，所述多个出气孔相对于所述匀流腔的底面均匀分布，用以均匀地将所述匀流腔内的反应气体输送至所述反应腔室内。
其中，所述反应腔室还包括固定电容或者可调电容，所述固定电容或者可调电容连接在所述上电极板与地之间的电路上。
其中，所述下电极装置包括基座，所述基座设置在所述反应腔室内 且接地，用于承载被加工工件。
作为另一个方面，本发明还提供一种半导体加工设备，包括反应腔室，所述反应腔室可以采用本发明上述任一方案所述的反应腔室。
本发明具有以下有益效果：
本发明提供的反应腔室，其具有由线圈放电形成的ICP源、由上电极板放电形成的CCP源以及由线圈和上电极板共同放电形成的ICP-CCP源，并且通过第一选择开关和第二选择开关，可以实现在ICP源、CCP源和ICP-CCP源三种模式之间切换，即，可选择地使用不同的等离子体源产生等离子体，从而可以扩大等离子体源的放电窗口和使用范围。
本发明提供的半导体加工设备，其通过采用本发明提供的反应腔室，可以可选择地使用不同的等离子体源产生等离子体，从而可以扩大等离子体源的放电窗口和使用范围。
附图说明
图1为本发明第一实施例提供的反应腔室的剖视图；
图2A为图1中反应腔室在使用ICP-CCP源工艺时的等效图；
图2B为图1中反应腔室在使用ICP-CCP源进行工艺时的等效电路图；
图3为图1中的上电极板沿其轴向剖切得到的剖视图；
图4A为本发明第二实施例提供的反应腔室的剖视图；
图4B为图4A中的反应腔室在使用ICP-CCP源进行工艺时的等效电路图；
图5为本发明第三实施例提供的反应腔室的剖视图；以及
图6为本发明第四实施例提供的反应腔室的剖视图。
具体实施方式
为使本领域的技术人员更好地理解本发明的技术方案，下面结合附图来对本发明提供的反应腔室及半导体加工设备进行详细描述。
图1为本发明第一实施例提供的反应腔室的剖视图。请参阅图1，反应腔室100包括上电极装置和下电极装置。其中，下电极装置设置在反应腔室100内，用于承载被加工工件被加工工件。在本实施例中，下电极装置包括基座104，且接地。
上电极装置包括介质筒102、线圈105、上功率电源107、上电极板103、电极支撑件、第一选择开关108和第二选择开关109。其中，电极支撑件包括第一支撑部114和第二支撑部115，二者和上电极板103共同封闭反应腔室100的顶部开口。其中，介质筒102为中空的筒状结构且设置在反应腔室100的腔室壁的顶部；第一支撑部114同样呈中空的筒状结构，且与介质筒102间隔一定距离地环绕在介质筒102的内侧，用于固定上电极板103。线圈105围绕介质筒102设置，且位于介质筒102和第一支撑部114之间。上电极板103固定在第一支撑部114的底部，且与第一支撑部114电绝缘，并且在反应腔室100的底面上的投影与基座104的投影相重叠。第二支撑部115接地，其为平板状结构，且呈环形，即，第二支撑部115为环形的板状结构；并且，第二支撑部115的内边缘与第一支撑部114的顶部固定连接；第二支撑部115的外边缘与反应腔室100的腔室壁固定连接。第一支撑部114和第二支撑部115采用诸如铝或者不锈钢等的导电金属制作。
进一步说，上述第二支撑部115固定在反应腔室100的顶部区域，第一支撑部114和介质筒102分别固定在第二支撑部115上。在这种情况下，当线圈105放电时，等离子体主要产生在反应腔室100的腔室壁与介质筒102二者所夹的区域内，该区域在反应腔室100的底面上的投影处于该底面的边缘区域且形状呈环形。当上电极板103放电时，等离 子体主要产生在上电极板103与基座104之间的区域，该区域在反应腔室100的底面上的投影处于该底面的中心区域。
第一选择开关108用于选择性地使上功率电源107通过匹配器106与线圈105的一端电连接，或者使上功率电源107通过匹配器106与上电极板103电连接。第二选择开关109用于选择性地使线圈105的另一端接地，或者使线圈105的另一端与上电极板103电连接。在本实施例中，第一选择开关108包括第一转换开关，该第一转换开关包括一个动触点和两个静触点，该动触点通过匹配器106连接上功率电源107，其中一个静触点a连接线圈105的一端，另一个静触点b连接上电极板103。与之相类似的，第二选择开关109包括第二转换开关，该第二转换开关包括一个动触点和两个静触点，动触点连接线圈105的另一端，其中一个静触点c通过电极支撑件接地，另一个静触点d连接上电极板103。
在进行工艺时，上功率电源107通过匹配器106将激励功率(低频功率或者射频功率)分别馈入第一选择开关108和第二选择开关109处。
具体地，若第一选择开关108中的动触点与静触点b连接，同时第二选择开关109中的动触点与静触点c连接，则上功率电源107与上电极板103电连接，且线圈105接地。在这种情况下，激励功率单独馈入上电极板103，并在上电极板103与基座104之间的中心区域激发反应腔室100内的反应气体形成等离子体，即，使用上电极板103放电形成的CCP源产生等离子体。
若第一选择开关108中的动触点与静触点a连接，同时第二选择开关109中的动触点与静触点c连接，则上功率电源107与线圈105的一端电连接，且线圈105的另一端接地。在这种情况下，激励功率单独馈入线圈105，并在介质筒102与反应腔室100的腔室壁之间的环形边缘 区域激发反应腔室100内的反应气体形成等离子体，即，使用线圈105放电形成的ICP源产生等离子体。
若第一选择开关108中的动触点与静触点a连接，同时第二选择开关109中的动触点与静触点d连接，则上功率电源107与线圈105的一端电连接，且线圈105的另一端与上电极板103电连接。在这种情况下，激励功率同时馈入线圈105和上电极板103，并分别在介质筒102与反应腔室100的腔室壁之间的环形边缘区域，以及上电极板103与基座104之间的中心区域激发反应腔室100内的反应气体形成等离子体，即，使用线圈105和上电极板103共同放电形成的ICP-CCP源产生等离子体。
图2A为图1中反应腔室在使用ICP-CCP源工艺时的等效图。如图2A所示，来自上功率电源107的交变电流依次通过线圈105和上电极板103，此时上电极板103可以等效为一个连接在线圈105与地之间的电容。这样，由线圈105和上电极板103共同放电形成的ICP-CCP源可以兼容CCP源的电场均匀性和ICP源的高等离子体密度这两个优势。优选的，可以将本发明实施例提供的反应腔室应用在PECVD设备，在利用该PECVD设备依次进行清洗工艺和沉积工艺时，可以在清洗工艺使用ICP-CCP源进行工艺，由于ICP-CCP源兼容CCP源的电场均匀性和ICP源的高等离子体密度这两个优势，因此，不仅可以提高清洗工艺的速率，而且还可以提高清洗工艺的均匀性。而在进行沉积工艺时，可以根据具体需要将ICP-CCP源切换至ICP源或者CCP源，从而满足沉积工艺的要求。
而且，基座104与上电极板103可以在工艺时产生平板式电场，由于由线圈105产生的电场的强度会被介质筒102削弱，而该平板式电场的强度远高于由线圈105产生的电场的强度，因此，该平板式电场相对于由线圈105产生的电场起主要作用，从而可以降低因线圈105的电场 不均匀所产生的影响，进而使形成的等离子体的密度分布更均匀，从而可以提高等离子体的密度分布均匀性。
图2B为图1中反应腔室在使用ICP-CCP源进行工艺时的等效电路图。如图2B所示，虚线方框表示等离子体等效模型。等离子体由鞘层和等离子体区组成，其中，鞘层可以等效为电容和二极管结构；等离子体区可以等效为电阻和电感结构。L为由等离子体的电流形成的等效电感。R为等离子体等效电阻。C1为上电极板103与等离子体鞘层之间形成的第一鞘层电容。C2为上电极板103与地之间形成的集散电容。C3为基座104与等离子体鞘层之间形成的第二鞘层电容。
由图2B可知，在进行工艺时，通过使线圈105与上电极板103电连接，还可以在上电极板103与地之间构成平板电容结构，同时形成集散电容C2和第一鞘层电容C1，其中，第一鞘层电容C1可以起到调节线圈105的射频电流相位的作用，从而通过控制例如等离子体启辉参数等的工艺条件，可以对第一鞘层电容C1进行实时调节，以减小线圈105的两端之间的相位差异，进而可以进一步提高由线圈105产生的电场的均匀性，从而可以提高等离子体的密度分布均匀性。
综上所述，本发明实施例提供的反应腔室，其具有由线圈105放电形成的ICP源、由上电极板103放电形成的CCP源以及由线圈105和上电极板103共同放电形成的ICP-CCP源，并且通过借助第一选择开关108和第二选择开关109，可以实现在ICP源、CCP源和ICP-CCP源三种模式之间切换，即，可选择地使用不同的等离子体源产生等离子体，从而可以扩大等离子体源的放电窗口和使用范围。
优选的，反应腔室100还包括至少一个中心进气口110和多个边缘进气口111，其中，图3为图1中的上电极板沿其轴向剖切得到的剖视图。如图3所示，上电极板103具有匀流腔1031，该匀流腔1031呈空腔结构。该匀流腔1031的顶部腔室壁中设置有至少一个沿匀流腔1031 的轴向贯穿该顶部腔室壁的进气口110，用以向匀流腔1031内输送反应气体。该匀流腔1031的底部腔室壁中设置有多个贯穿该底部腔室壁的出气孔1032，这些出气孔1032相对于匀流腔1031的底面均匀分布，用以均匀地将匀流腔1031内的反应气体输送至反应腔室100内的位于上电极板103与基座104之间的中心区域处。此外，多个边缘进气口111沿第二支撑部115的周向而设置在第二支撑部115上，并与反应腔室100的内部相连通，用以均匀地将反应气体输送至反应腔室100内的位于介质筒102与反应腔室100的腔室壁之间的环形边缘区域。
在进行工艺时，反应气体首先经由上述进气口110进入匀流腔1031内，并向四周扩散，实现在整个匀流腔1031内的均匀分布，然后经由各个出气孔1032均匀地流入反应腔室100内。反应气体的流向如图3中的箭头所示。
另外，反应腔室100还包括气源113和气体分配装置112，其中，气源113用于提供反应气体；气体分配装置112用于将来自气源113的反应气体分配至中心进气口110和/或各个边缘进气口111，从而可以根据当前所使用的等离子体源，控制反应气体由相应的进气口流入反应腔室100内。
优选的，在电极支撑件的上方还罩设有屏蔽罩116，该屏蔽罩116接地，在进行工艺时，屏蔽罩116可以屏蔽由线圈105和/或上电极板103产生的电磁场，从而避免射频电源在馈入功率时产生的射频辐射对工艺造成影响。
需要说明的是，在本实施例中，第一选择开关108和第二选择开关109均为转换开关，但是本发明并不局限于此，在实际应用中，第一选择开关108和/或第二选择开关109还可以采用由两个独立开关和开关控制模块组成的电子开关，例如继电器、二极管或者射频开关等等。具体地，在第一选择开关中，两个独立开关用于分别连接在上功率电源与 线圈的一端(以下称为“线圈的第一端”)之间的电路上，以及上射频电源与上电极板之间的电路上；开关控制模块用于选择性地控制两个独立开关的导通和断开，从而实现选择性地使上功率电源与线圈的第一端电连接，或者使上功率电源与上电极板电连接。与之相类似的，在第二选择开关中，两个独立开关用于分别连接在线圈的另一端(以下称为“线圈的第二端”)与地之间的电路上，以及线圈的第二端与上电极板之间的电路上；开关控制模块用于选择性地控制两个独立开关的导通和断开，从而实现选择性地使线圈的第二端接地，或者使线圈的第二端与上电极板电连接。可以理解，线圈的第一端和线圈的第二端的命名仅仅是为了便于区分以及便于清楚地进行描述，而并非用于限定线圈的输入端和输出端。
还需要说明的是，在本实施例中，上电极板103具有空腔结构的匀流腔1031，但是本发明并不局限于此，在实际应用中，上电极板103也可以采用实心的平板，在这种情况下，至少一个中心进气口110设置在该平板上，并直接连通至反应腔室100的内部。
另外，在本实施例中，通过使基座104接地，可以降低在置于基座104上的被加工工件表面产生的偏压，从而可以避免在使用CCP源或者ICP-CCP源进行工艺时，使沉积在被加工工件表面上的薄膜产生缺陷或损伤。当然，在实际应用中，基座104也可以根据具体需要与射频电源电连接。
图4A为本发明第二实施例提供的反应腔室的剖视图。请参阅图4A，本发明第二实施例为上述第一实施例的变型，该变型实施例与上述第一实施例相比，其区别仅在于，反应腔室100还包括固定电容117，该固定电容117串联在上电极板103与地之间。具体地，固定电容117的一端接上电极板103，另一端通过电极支撑件接地。
图4B为图4A中的反应腔室在使用ICP-CCP源进行工艺时的等效 电路图。请参阅图4B，C4为固定电容，线圈105的电压可以被分配至第一鞘层电容C1和固定电容C4，即，固定电容C4可以起到对线圈105两端的电压进行分压的作用，以减小线圈105两端间的电压差异，从而可以进一步提高由线圈105产生的电场的均匀性。此外，借助固定电容C4的分压作用，还可以避免因线圈105的输出末端电压过高，而导致上电极板103产生打火现象。
在实际应用中，上述固定电容C4可以采用可调电容代替，由于其容值可调，通过调节该可调电容接入到电路中的容值大小，可以对线圈105两端的电压的分配进行调节，以减小线圈105两端间的电压差异，从而不仅可以进一步提高由线圈105产生的电场的均匀性，而且还可以提高电容调节的灵活性。
图5为本发明第三实施例提供的反应腔室的剖视图。请参阅图5，本实施例提供的反应腔室与上述第一实施例相比，其区别仅在于：上电极装置的结构不同。
具体地，反应腔室200包括上电极装置和下电极装置。其中，下电极装置设置在反应腔室200内，用于承载被加工工件。在本实施例中，下电极装置包括基座204，且接地。
上电极装置包括介质筒202、线圈205、上功率电源207、匹配器206、上电极板203、屏蔽罩216、第一选择开关208和第二选择开关209。其中，介质筒202为中空的筒状结构且设置在反应腔室200的顶部，具体地，介质筒202设置在反应腔室200的外部且由腔室壁的顶部支撑，该腔室壁的顶部开口被罩在介质筒202的内侧，借助该腔室壁的顶部开口使得介质筒202所括空间与反应腔室200的空腔相连通。上电极板203呈平板状，设置在介质筒202的顶部，将介质筒202的顶部开口封闭。这样，介质筒202、上电极板203以及反应腔室200的顶壁共同封闭反应腔室200的顶部开口，且介质筒202的内部与反应腔室200 的内部相连通，从而上电极板203、介质筒202和反应腔室200的腔室壁共同形成封闭的工艺空间。并且，线圈205环绕设置在介质筒202的外侧。此外，上电极装置中的其他部件的结构和功能与上述第一实施例的对应部件的结构和功能相类似，在此不再赘述。
在本实施例中，反应腔室还包括一个进气口210和气源213，其中，进气口210设置在上电极板203的中心位置处，并与反应腔室200的内部相连通，在进行工艺时，由气源213提供的反应气体经由进气口210进入反应腔室200的内部。
在实际应用中，上述进气口的数量还可以为两个或者三个以上，且沿上电极板所在平面均匀分布，用以均匀地向反应腔室200内输送反应气体。
需要说明的是，在本实施例中，上电极板203呈平板状，但是本发明并不局限于此，在实际应用中，与上述第一实施例相类似的，上电极板还可以设置成带有匀流腔的结构。并且，在该匀流腔的顶部设置有至少一个进气口，用以向匀流腔内输送反应气体。在匀流腔的底部设置有多个出气孔，且相对于匀流腔的底面均匀分布，用以均匀地将匀流腔内的反应气体输送至反应腔室内。在进行工艺时，反应气体首先经由上述至少一个进气口进入匀流腔内，并向四周扩散，实现在整个匀流腔内的均匀分布，然后经由各个出气孔均匀地流入反应腔室内。
图6为本发明第四实施例提供的反应腔室的剖视图。请参阅图6，本发明第四实施例与上述第三实施例相比，其区别仅在于：反应腔室200还包括固定电容217，该固定电容217连接在上电极板203与地之间的电路上。具体地，固定电容217通过屏蔽罩216接地。
与上述第二实施例相类似的，固定电容217可以起到对线圈205两端电压进行分压的作用，以减小线圈205两端之间的电压差异，从而可以进一步提高由线圈205产生的电场的均匀性。此外，借助固定电容 217的分压作用，还可以避免因线圈205的输出末端电压过高，而导致上电极板203产生打火现象。
在实际应用中，上述固定电容217可以采用可调电容代替，由于其容值可调，通过调节可调电容接入电路中的容值大小，可以对线圈205两端电压的分配进行调节，以减小线圈205两端之间的电压差异，从而不仅可以进一步提高由线圈205产生的电场的均匀性，而且还可以提高电容调节的灵活性。
综上所述，本发明上述各个实施例提供的反应腔室，其具有由线圈放电形成的ICP源、由上电极板放电形成的CCP源以及由线圈和上电极板共同放电形成的ICP-CCP源，并且通过借助第一选择开关和第二选择开关，可以实现在ICP源、CCP源和ICP-CCP源三种模式之间切换，即，可选择地使用不同的等离子体源产生等离子体，从而可以扩大等离子体源的放电窗口和使用范围。
作为另一个技术方案，本发明实施例还提供一种半导体加工设备，包括反应腔室，该反应腔室采用了本发明上述各个实施例提供的反应腔室。
本发明实施例提供的半导体加工设备，其通过采用本发明实施例提供的上述反应腔室，可以可选择地使用不同的等离子体源产生等离子体，从而可以扩大等离子体源的放电窗口和使用范围。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (15)

  1. 一种反应腔室，包括上电极装置和下电极装置，所述下电极装置设置在所述反应腔室内，用于承载被加工工件，其特征在于，所述上电极装置包括介质筒、线圈、上功率电源、上电极板、第一选择开关和第二选择开关，其中，
    所述介质筒为中空的筒状结构且设置在所述反应腔室的腔室壁的顶部；
    所述线圈围绕所述介质筒设置；
    所述上电极板位于所述下电极装置的上方；
    所述第一选择开关用于选择性地使所述上功率电源与所述线圈的第一端电连接，或者使所述上功率电源与所述上电极板电连接；
    所述第二选择开关用于选择性地使所述线圈的第二端接地，或者使所述线圈的第二端与所述上电极板电连接。
  2. 根据权利要求1所述的反应腔室，其特征在于，所述第一选择开关包括第一转换开关，所述第一转换开关包括一个动触点和两个静触点，所述动触点连接所述上功率电源，且其中一个静触点连接所述线圈的第一端，另一个静触点连接所述上电极板。
  3. 根据权利要求1所述的反应腔室，其特征在于，所述第二选择开关包括第二转换开关，所述第二转换开关包括一个动触点和两个静触点，所述动触点连接所述线圈的第二端，且其中一个静触点接地，另一个静触点连接所述上电极板。
  4. 根据权利要求1所述的反应腔室，其特征在于，所述第一选择开关包括：
    两个独立开关，用于分别连接在所述上功率电源与所述线圈的第一端之 间的电路上，以及连接在所述上射频电源与所述上电极板之间的电路上；
    所述开关控制模块，用于选择性地控制所述两个独立开关的导通和断开。
  5. 根据权利要求1所述的反应腔室，其特征在于，所述第二选择开关包括：
    两个独立开关，用于分别连接在所述线圈的第二端与地之间的电路上，以及连接在所述线圈的第二端与所述上电极板之间的电路上；
    所述开关控制模块，用于选择性地控制所述两个独立开关的导通和断开。
  6. 根据权利要求4或5所述的反应腔室，其特征在于，所述独立开关包括继电器、二极管或者射频开关。
  7. 根据权利要求1-5任意一项所述的反应腔室，其特征在于，所述上电极组件还包括电极支撑件，所述电极支撑件和所述上电极板共同封闭所述反应腔室的顶部开口，且所述电极支撑件包括第一支撑部和第二支撑部，其中，
    所述第一支撑部呈中空的筒状结构，且与所述介质筒间隔一定距离地环绕在所述介质筒的内侧；所述线圈位于所述介质筒和所述第一支撑部之间；所述上电极板固定在所述第一支撑部的底部，且与所述第一支撑部电绝缘；
    所述第二支撑部呈环形的板状结构，且接地；并且，所述第二支撑部的内边缘与所述第一支撑部的顶部固定连接，所述第二支撑部的外边缘与所述反应腔室的腔室壁固定连接。
  8. 根据权利要求7所述的反应腔室，其特征在于，所述反应腔室还包括至少一个中心进气口和多个边缘进气口，其中，
    所述至少一个中心进气口设置在所述上电极板上，并与所述反应腔室的内部相连通；
    所述多个边缘进气口沿所述第二支撑部的周向而设置在所述第二支撑部上，并与所述反应腔室的内部相连通。
  9. 根据权利要求8所述的反应腔室，其特征在于，所述上电极板具有呈空腔结构的匀流腔；所述至少一个中心进气口设置在所述匀流腔的顶部腔室壁，用以向所述匀流腔内输送反应气体；
    在所述匀流腔的底部腔室壁设置有多个出气孔，且相对于所述匀流腔的底面均匀分布，用以均匀地将所述匀流腔内的反应气体输送至所述反应腔室内。
  10. 根据权利要求8所述的反应腔室，其特征在于，所述反应腔室还包括气源和气体分配装置，其中，
    所述气源用于提供反应气体；
    所述气体分配装置用于将来自所述气源的反应气体分配至所述中心进气口和/或各个边缘进气口。
  11. 根据权利要求1-5任意一项所述的反应腔室，其特征在于，所述介质筒、所述上电极板和所述反应腔室的顶壁共同封闭所述反应腔室的顶部开口；所述上电极板设置在所述介质筒的顶部；并且，所述线圈位于所述介质筒的外侧。
  12. 根据权利要求11所述的反应腔室，其特征在于，所述上电极板具有呈空腔结构的匀流腔；
    在所述匀流腔的顶部腔室壁设置有至少一个进气口，用以向所述匀流腔内输送反应气体；
    在所述匀流腔的底部腔室壁设置有多个出气孔，所述多个出气孔相对于所述匀流腔的底面均匀分布，用以均匀地将所述匀流腔内的反应气体输送至所述反应腔室内。
  13. 根据权利要求1-5任意一项所述的反应腔室，其特征在于，所述反应腔室还包括固定电容或者可调电容，所述固定电容或者可调电容连接在所述上电极板与地之间的电路上。
  14. 根据权利要求1-5任意一项所述的反应腔室，其特征在于，所述下电极装置包括基座，所述基座设置在所述反应腔室内且接地，用于承载被加工工件。
  15. 一种半导体加工设备，包括反应腔室，其特征在于，所述反应腔室采用权利要求1-14任意一项所述的反应腔室。
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