WO2017173693A1 - Oled显示面板及其制备方法 - Google Patents

Oled显示面板及其制备方法 Download PDF

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WO2017173693A1
WO2017173693A1 PCT/CN2016/080987 CN2016080987W WO2017173693A1 WO 2017173693 A1 WO2017173693 A1 WO 2017173693A1 CN 2016080987 W CN2016080987 W CN 2016080987W WO 2017173693 A1 WO2017173693 A1 WO 2017173693A1
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layer
light
photochromic
display panel
oled display
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French (fr)
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匡友元
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US15/106,827 priority Critical patent/US10079369B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/876—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/50—OLEDs integrated with light modulating elements, e.g. with electrochromic elements, photochromic elements or liquid crystal elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/321—Inverted OLED, i.e. having cathode between substrate and anode

Definitions

  • the present invention relates to the field of OLED display panel technologies, and in particular, to an OLED display panel and a method for fabricating the OLED display panel.
  • OLED Organic Light-Emitting Diode
  • OLED Organic Light-Emitting Diode
  • a color display prepared by synthesizing three primary colors of red, green and blue Medium the utilization rate is very low.
  • a Fabry-Perot (F-P) optical microcavity of an OLED display panel is prepared by changing the structure of the OLED display panel to obtain a high-brightness narrow-band emission.
  • the optical microcavity not only achieves narrowband emission, but also greatly enhances the emission intensity relative to devices without a microcavity structure.
  • the conventional FP optical microcavity structure requires two mirror surfaces, generally adopting a metal-metal structure. Therefore, the total optical path of the microcavity of the FP optical microcavity structure is limited by the thickness and refractive index of the organic film layer in the OLED display panel, and the microcavity total The optical path is short, and it is difficult for the industry to increase the total optical path of the microcavity by adjusting the organic film layer in the OLED display panel.
  • the technical problem to be solved by the present invention is to provide an OLED display panel having a longer optical path of a longer microcavity, and a method of fabricating the OLED display panel.
  • an OLED display panel including:
  • a light emitting layer formed on a side of the translucent cathode facing away from the substrate
  • a transparent anode formed on a side of the luminescent layer facing away from the translucent cathode
  • a photochromic layer formed on a side of the transparent anode facing away from the light-emitting layer, the photochromic layer comprising a photochromic material that changes from transparent to opaque under light excitation, the light emitted by the light-emitting layer includes A wavelength used to excite the photochromic material.
  • the transparent anode is made of indium tin oxide material.
  • the translucent cathode is a magnesium-silver alloy.
  • the photochromic layer when the luminescent layer does not emit light, the photochromic layer has a transmittance in the visible light range of greater than 90%; and when the luminescent layer emits light, the photochromic layer transmits in the visible range The rate is less than 10%.
  • the photochromic material comprises one or more of silver halide, zinc halide, copper halide, magnesium halide, spiropyran, spirophene, azine dye, dehydropyridine.
  • the OLED display panel further includes an adjustment layer formed between the photochromic layer and the transparent anode, and the adjustment layer is made of a transparent material for adjusting the photochromic layer and the transparent anode. The spacing between them.
  • the OLED display panel further includes:
  • An electron transport layer formed on a side of the light emitting layer facing away from the hole transport layer;
  • An electron injection layer is formed between the electron transport layer and the translucent cathode.
  • a method for preparing an OLED display panel including:
  • the photochromic layer Forming a photochromic layer on the side of the transparent anode facing away from the light-emitting layer, the photochromic layer
  • the layer comprises a photochromic material that changes from transparent to opaque under photoexcitation, the light emitted by the luminescent layer comprising a wavelength for exciting the photochromic material.
  • forming the translucent cathode, the luminescent layer and the transparent anode sequentially on the substrate comprises:
  • An indium tin oxide material is deposited by vapor deposition on a side of the light-emitting layer facing away from the translucent cathode to form the transparent anode.
  • forming the photochromic layer on a side of the transparent anode facing away from the light emitting layer comprises:
  • the photochromic material is deposited by evaporation, sputtering or electron beam deposition on the side of the transparent anode facing away from the light-emitting layer to form the photochromic layer.
  • the present invention has the following beneficial effects:
  • the photochromic layer, the transparent anode, the luminescent layer, the translucent cathode, and the substrate of the OLED display panel of the embodiment of the present invention are sequentially stacked, and when the luminescent layer emits light, The photochromic layer becomes opaque under excitation of light, thereby forming a resonant microcavity with the translucent cathode.
  • the thickness of the photochromic layer does not affect the pressure drop and electrical properties of the OLED display panel, and increases micro
  • the total optical path of the cavity prevents the microcavity adjustment from being excessively dependent on the organic film layer (for example, the light emitting layer) of the OLED display panel, thereby improving the adjustable performance of the OLED display panel, so that the OLED display panel has more High luminous efficiency.
  • FIG. 1 is a schematic structural diagram of an OLED display panel according to an embodiment of the present invention.
  • FIG. 2 is a flow chart of a method for fabricating an OLED display panel according to an embodiment of the present invention.
  • an embodiment of the present invention provides an OLED (Organic Light-Emitting Diode) display panel, including: a substrate 1, a semi-transparent cathode 9 (Cathode), an Emitting Material Layer (6), and a transparent layer.
  • Anode 3 Anode and photochromic layer 2.
  • the translucent cathode 9 is formed on the substrate 1 to transmit a part of the light and reflect another part of the light.
  • the light-emitting layer 6 is formed on a side of the translucent cathode 9 facing away from the substrate 1 for emitting light.
  • the transparent anode 3 is formed on a side of the light-emitting layer 6 facing away from the translucent cathode 9, and is capable of transmitting light.
  • the photochromic layer 2 is formed on a side of the transparent anode 3 facing away from the light-emitting layer 6, and the photochromic layer 2 comprises a photochromic material that changes from transparent to opaque under light excitation, the luminescence
  • the light emitted by layer 6 includes a wavelength for exciting the photochromic material. That is, when the light-emitting layer 6 emits light, the photochromic layer 2 is opaque under light excitation and is capable of reflecting light.
  • the photochromic layer 2, the transparent anode 3, the luminescent layer 6, the translucent cathode 9 and the substrate 1 are sequentially stacked, when the luminescent layer 6 emits light.
  • the photochromic layer 2 becomes opaque under the excitation of light, thereby forming a resonant microcavity with the translucent cathode 9. Since the photochromic layer 2 is located on a side of the transparent anode 3 facing away from the light emitting layer 6, the thickness of the photochromic layer 2 does not affect the pressure drop and electrical properties of the OLED display panel.
  • the total optical path of the microcavity is increased, and the microcavity adjustment is prevented from being excessively dependent on the organic film layer (for example, the luminescent layer 6) of the OLED display panel, thereby improving the adjustable performance of the OLED display panel, so that the The OLED display panel has higher luminous efficiency.
  • the organic film layer for example, the luminescent layer 6
  • the transparent anode 3 is made of an indium tin oxide (ITO) material to improve hole injection capability and reduce hole injection energy barrier. It should be understood that in other embodiments, the transparent anode 3 may also be selected from other transparent conductive materials having a high work function.
  • ITO indium tin oxide
  • the translucent cathode 9 is made of magnesium silver (Mg/Ag). alloy. Among them, the ratio of magnesium to silver is 1:9. It should be understood that in other embodiments, the transparent anode 3 may also be selected from other translucent other conductive materials having a low work function.
  • the transmittance of the photochromic layer 2 in the visible light range is greater than 90%; when the light-emitting layer 6 emits light, The photochromic layer 2 has a transmittance in the visible light range of less than 10%.
  • the photochromic layer 2 has a transmittance in the visible light range from 100% to 0% under excitation of light.
  • the photochromic layer 2 may comprise an organic photochromic material and/or an inorganic photochromic material.
  • the photochromic material includes one or more of silver halide, zinc halide, copper halide, magnesium halide, spiropyran, spirophene, azine dye, dehydropyridine, the photoinduced
  • the color changing layer 2 base material is selected from, but not limited to, silica or an organic resin, and the photochromic material is doped in an amount of 0.011% by weight to 10% by weight.
  • the OLED display panel further includes an adjustment layer 10 formed between the photochromic layer 2 and the transparent anode 3 , the adjustment layer 10
  • the spacing between the photochromic layer 2 and the transparent anode 3 is adjusted, thereby further increasing the total optical path of the microcavity and improving the adjustable performance of the OLED display panel.
  • the OLED display panel further includes a Hole Inject Layer (HIL), a Hole Transport Layer (HTL), and an electron.
  • HIL Hole Inject Layer
  • HTL Hole Transport Layer
  • EIL Electron Inject Layer
  • the hole injection layer 4 is formed on a side of the transparent anode 3 facing away from the photochromic layer 2.
  • the hole transport layer 5 is formed between the hole injection layer 4 and the light-emitting layer 6.
  • the electron transport layer 7 is formed on a side of the light-emitting layer 6 facing away from the hole transport layer 5.
  • the electron injection layer 8 is formed between the electron transport layer 7 and the translucent cathode 9.
  • the substrate 1 is a flexible substrate, and the OLED display panel is a flexible display panel, which can be applied to more environments, has a wide application range, and is diversified in application.
  • the substrate 1 may also be a rigid substrate or a combination of a flexible substrate and a rigid substrate.
  • an embodiment of the present invention further provides a method for preparing an OLED display panel, including:
  • Step 1 forming a semi-transparent cathode 9, a light-emitting layer 6, and a transparent anode 3 on the substrate 1, and the light-emitting layer 6 is used for emitting light;
  • Step 2 forming a photochromic layer 2 on a side of the transparent anode 3 facing away from the light-emitting layer 6, the photochromic layer 2 comprising a photochromic material that changes from transparent to opaque under light excitation, The light emitted by the luminescent layer includes a wavelength for exciting the photochromic material.
  • the photochromic layer 2 becomes opaque under the excitation of light, thereby forming a resonant microcavity with the translucent cathode 9. Since the photochromic layer 2 is located on a side of the transparent anode 3 facing away from the light emitting layer 6, the thickness of the photochromic layer 2 does not affect the pressure drop and electrical properties of the OLED display panel.
  • the total optical path of the microcavity is increased, and the microcavity adjustment is prevented from being excessively dependent on the organic film layer (for example, the luminescent layer 6) of the OLED display panel, thereby improving the adjustable performance of the OLED display panel, so that the The OLED display panel has higher luminous efficiency.
  • the organic film layer for example, the luminescent layer 6
  • step Step 1 includes:
  • Step 11 depositing a magnesium-silver alloy material on the substrate 1 by evaporation to form the translucent cathode 9;
  • Step 12 depositing a luminescent material on a side of the translucent cathode 9 facing away from the substrate 1 by evaporation to form the luminescent layer 6;
  • Step 13 depositing an indium tin oxide material on the side of the light-emitting layer 6 facing away from the translucent cathode 9 by evaporation to form the transparent anode 3.
  • the transparent anode 3 is made of an indium tin oxide (ITO) material, which can improve hole injection capability and reduce hole injection energy barrier.
  • ITO indium tin oxide
  • step Step 2 includes:
  • the photochromic material is deposited by evaporation, sputtering or electron beam to form the photochromic layer 2.
  • the vapor deposition refers to a process in which a substance to be film formed (for example, a photochromic material) is subjected to evaporation or sublimation in a vacuum to precipitate on the surface of the substrate 1.
  • the sputtering refers to bombarding a solid surface with particles of a certain energy (ion or neutral atom, molecule, such as photochromic material) to make the solid near surface The atoms or molecules get enough energy to eventually escape the solid surface.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种OLED显示面板及其制备方法，包括：基板（1）；半透明阴极（9），形成在所述基板（1）上；发光层（6），形成在所述半透明阴极（9）背离所述基板（1）的一侧；透明阳极（3），形成在所述发光层（6）背离所述半透明阴极（9）的一侧；及光致变色层（2），形成在所述透明阳极（3）背离所述发光层（6）的一侧，所述光致变色层（2）包括在光激发下由透明到不透明变化的光致变色材料，所述发光层（6）发出的光线包括用于激发所述光致变色材料的波长。所述OLED显示面板具有较长微腔总光程。

Description

OLED显示面板及其制备方法
本发明要求2016年4月5日递交的发明名称为“OLED显示面板及其制备方法”的申请号201610205547.4的在先申请优先权，上述在先申请的内容以引入的方式并入本文本中。
技术领域
本发明涉及OLED显示面板技术领域，尤其涉及一种OLED显示面板以及一种所述OLED显示面板的制备方法。
背景技术
OLED(Organic Light-Emitting Diode，有机发光二极管)显示面板，是20世纪中期发展起来的一种新型显示技术，具有超轻薄、全固态、主动发光、响应速度快、高对比度、无视觉限制、工作温度范围宽、低功耗、低成本、抗震能力强以及可实现柔性显示等诸多有点，将成为下一代平板显示的主力军。其优越性能和巨大的市场潜力，吸引全世界众多厂家和科研机构投入到OLED显示面板的生产和研发中。
然而，由于振动编带和不均匀加宽效应，无论是有机小分子还是高分子聚合物发光材料，其光谱半宽度往往大于80nm，因而在利用红、绿、蓝三基色合成而制备的彩色显示器中，利用率很低。为了制备具有窄带发射的OLED显示面板，人们通过改变OLED显示面板的结构，制备OLED显示面板的Fabry-Perot(F-P)光学微腔来获得高亮度的窄带发射。光学微腔不仅实现了窄带发射，而且还使得发射强度相对于无微腔结构的器件而言大大增强。常规的F-P光学微腔结构需要两个反射镜面，一般采用金属－金属结构，因此F-P光学微腔结构的微腔总光程受制于OLED显示面板中有机膜层的厚度及折射率，微腔总光程较短，业内人士难以通过调节OLED显示面板中的有机膜层来增加微腔总光程。
发明内容
本发明所要解决的技术问题在于提供一种具有较长微腔总光程的OLED显示面板，以及一种所述OLED显示面板的制备方法。
为了实现上述目的，本发明实施方式采用如下技术方案：
一方面，提供一种OLED显示面板，包括：
基板；
半透明阴极，形成在所述基板上；
发光层，形成在所述半透明阴极背离所述基板的一侧；
透明阳极，形成在所述发光层背离所述半透明阴极的一侧；及
光致变色层，形成在所述透明阳极背离所述发光层的一侧，所述光致变色层包括在光激发下由透明到不透明变化的光致变色材料，所述发光层发出的光线包括用于激发所述光致变色材料的波长。
其中，所述透明阳极采用氧化铟锡材料。
其中，所述半透明阴极采用镁银合金。
其中，当所述发光层不发光时，所述光致变色层在可见光范围内的透过率大于90％；当所述发光层发光时，所述光致变色层在可见光范围内的透过率小于10％。
其中，所述光致变色材料包括卤化银、卤化锌、卤化铜、卤化镁、螺环吡喃、螺吩噁、嗪染料、脱氢吡啶中的一种或多种。
其中，所述OLED显示面板还包括形成在所述光致变色层与所述透明阳极之间的调节层，所述调节层采用透明材质，用以调节所述光致变色层与所述透明阳极之间的间距。
其中，所述OLED显示面板还包括：
空穴注入层，形成在所述透明阳极背离所述光致变色层的一侧；
空穴传输层，形成在所述空穴注入层与所述发光层之间；
电子传输层，形成在所述发光层背离所述空穴传输层的一侧；及
电子注入层，形成在所述电子传输层与所述半透明阴极之间。
另一方面，还提供一种OLED显示面板的制备方法，包括：
在基板上依次形成半透明阴极、发光层以及透明阳极；
在所述透明阳极背离所述发光层的一侧上形成光致变色层，所述光致变色 层包括在光激发下由透明到不透明变化的光致变色材料，所述发光层发出的光线包括用于激发所述光致变色材料的波长。
其中，所述在基板上依次形成半透明阴极、发光层以及透明阳极包括：
通过蒸镀方式在所述基板上沉积镁银合金材料，以形成所述半透明阴极；
通过蒸镀方式在所述半透明阴极背离所述基板的一侧沉积发光材料，以形成所述发光层；及
通过蒸镀方式在所述发光层背离所述半透明阴极的一侧沉积氧化铟锡材料，以形成所述透明阳极。
其中，所述在所述透明阳极背离所述发光层的一侧上形成光致变色层包括：
在所述透明阳极背离所述发光层的一侧上，通过蒸镀、溅射或者电子束方式沉积所述光致变色材料，以形成所述光致变色层。
相较于现有技术，本发明具有以下有益效果：
本发明实施例所述OLED显示面板的所述光致变色层、所述透明阳极、所述发光层、所述半透明阴极以及所述基板依次层叠设置，当所述发光层发出光线时，所述光致变色层在光线激发下变为不透明状态，从而与所述半透明阴极形成共振微腔。由于所述光致变色层位于所述透明阳极背离所述发光层的一侧，因此所述光致变色层的厚度不会影响到所述OLED显示面板的压降和电学性能，同时增加了微腔的总光程，避免微腔调整对所述OLED显示面板的有机膜层(例如所述发光层)过度依赖，进而提高所述OLED显示面板的可调节性能，使得所述OLED显示面板具有更高的发光效率。
附图说明
为了更清楚地说明本发明的技术方案，下面将对实施方式中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施方式，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以如这些附图获得其他的附图。
图1是本发明实施例提供的一种OLED显示面板的结构示意图。
图2是本发明实施例提供的一种OLED显示面板的制备方法的流程图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
请参阅图1，本发明实施例提供一种OLED(Organic Light-Emitting Diode，有机发光二极管)显示面板，包括：基板1、半透明阴极9(Cathode)、发光层6(Emitting Material Layer)、透明阳极3(Anode)以及光致变色层2。其中，所述半透明阴极9形成在所述基板1上，能过透过部分光线并反射另一部分光线。所述发光层6形成在所述半透明阴极9背离所述基板1的一侧，用于发出光线。所述透明阳极3形成在所述发光层6背离所述半透明阴极9的一侧，能够透过光线。所述光致变色层2形成在所述透明阳极3背离所述发光层6的一侧，所述光致变色层2包括在光激发下由透明到不透明变化的光致变色材料，所述发光层6发出的光线包括用于激发所述光致变色材料的波长。也即当所述发光层6发光时，，所述光致变色层2在光激发下不透明，能够反射光线。
在本实施例中，所述光致变色层2、所述透明阳极3、所述发光层6、所述半透明阴极9以及所述基板1依次层叠设置，当所述发光层6发出光线时，所述光致变色层2在光线激发下变为不透明状态，从而与所述半透明阴极9形成共振微腔。由于所述光致变色层2位于所述透明阳极3背离所述发光层6的一侧，因此所述光致变色层2的厚度不会影响到所述OLED显示面板的压降和电学性能，同时增加了微腔的总光程，避免微腔调整对所述OLED显示面板的有机膜层(例如所述发光层6)过度依赖，进而提高所述OLED显示面板的可调节性能，使得所述OLED显示面板具有更高的发光效率。
进一步地，作为一种可选实施例，所述透明阳极3采用氧化铟锡(indium tin oxide，ITO)材料，从而提高空穴注入能力、降低空穴注入能垒。应当理解的是，在其他实施例中，所述透明阳极3也可以选用透明的具有高功函数的其他导电材料。
进一步地，作为一种可选实施例，所述半透明阴极9采用镁银(Mg/Ag) 合金。其中，镁与银的比例为1：9。应当理解的是，在其他实施例中，所述透明阳极3也可以选用半透明的具有低功函数的其他导电材料。
进一步地，作为一种可选实施例，当所述发光层6不发光时，所述光致变色层2在可见光范围内的透过率大于90％；当所述发光层6发光时，所述光致变色层2在可见光范围内的透过率小于10％。优选的，所述光致变色层2在光线的激发下，其在可见光范围内的透过率由100％变为0％。
可选的，所述光致变色层2可包括有机光致变色材料和/或无机光致变色材料。举例而言，所述光致变色材料包括卤化银、卤化锌、卤化铜、卤化镁、螺环吡喃、螺吩噁、嗪染料、脱氢吡啶中的一种或多种，所述光致变色层2基体材料选自但不限于二氧化硅或有机树脂，所述光致变色材料的掺杂量为0.011wt％～10wt％。
进一步地，作为一种可选实施例，请参阅图1，所述OLED显示面板还包括形成在所述光致变色层2与所述透明阳极3之间的调节层10，所述调节层10为采用透明材质，用以调节所述光致变色层2与所述透明阳极3之间的间距，从而进一步增加微腔的总光程、提高所述OLED显示面板的可调节性能。
进一步地，作为一种可选实施例，请参阅图1，所述OLED显示面板还包括空穴注入层4(Hole Inject Layer，HIL)、空穴传输层5(Hole Transport Layer，HTL)、电子传输层7(Electron Transport Layer，ETL)以及电子注入层8(Electron Inject Layer，EIL)，用以增加电子或空穴的传输及平衡，从而提高所述OLED显示面板的发光效率。其中，所述空穴注入层4形成在所述透明阳极3背离所述光致变色层2的一侧。所述空穴传输层5形成在所述空穴注入层4与所述发光层6之间。所述电子传输层7形成在所述发光层6背离所述空穴传输层5的一侧。所述电子注入层8形成在所述电子传输层7与所述半透明阴极9之间。
进一步地，作为一种可选实施例，所述基板1为柔性基板，进而使得所述OLED显示面板为柔性显示面板，可适用于更多的使用环境，应用范围广、应用多样化。当然，在其他实施例中，所述基板1也可以为硬性基板，或者柔性基板与硬性基板的组合。
请一并参阅图1和图2，本发明实施例还提供一种OLED显示面板的制备方法，包括：
Step1：在所述基板1上依次形成半透明阴极9、发光层6以及透明阳极3，所述发光层6用于发出光线；
Step2：在所述透明阳极3背离所述发光层6的一侧上形成光致变色层2，所述光致变色层2包括在光激发下由透明到不透明变化的光致变色材料，所述发光层发出的光线包括用于激发所述光致变色材料的波长。
通过本实施例所述制备方法所形成的OLED显示面板，其所述光致变色层2、所述透明阳极3、所述发光层6、所述半透明阴极9以及所述基板1依次层叠设置，当所述发光层6发出光线时，所述光致变色层2在光线激发下变为不透明状态，从而与所述半透明阴极9形成共振微腔。由于所述光致变色层2位于所述透明阳极3背离所述发光层6的一侧，因此所述光致变色层2的厚度不会影响到所述OLED显示面板的压降和电学性能，同时增加了微腔的总光程，避免微腔调整对所述OLED显示面板的有机膜层(例如所述发光层6)过度依赖，进而提高所述OLED显示面板的可调节性能，使得所述OLED显示面板具有更高的发光效率。
进一步地，作为一种可选实施例，步骤Step1包括：
Step11：通过蒸镀方式在所述基板1上沉积镁银合金材料，以形成所述半透明阴极9；
Step12：通过蒸镀方式在所述半透明阴极9背离所述基板1的一侧沉积发光材料，以形成所述发光层6；及
Step13：通过蒸镀方式在所述发光层6背离所述半透明阴极9的一侧沉积氧化铟锡材料，以形成所述透明阳极3。
所述透明阳极3采用氧化铟锡(indium tin oxide，ITO)材料，能够提高空穴注入能力、降低空穴注入能垒。
进一步地，作为一种可选实施例，步骤Step2包括：
在所述透明阳极3背离所述发光层6的一侧上，通过蒸镀、溅射或者电子束方式沉积所述光致变色材料，以形成所述光致变色层2。
所述蒸镀是指将待成膜的物质(例如光致变色材料)置于真空中进行蒸发或升华，使之在所述基板1表面析出的过程。所述溅射是指以一定能量的粒子(离子或中性原子、分子，例如光致变色材料)轰击固体表面，使固体近表面 的原子或分子获得足够大的能量而最终逸出固体表面。
以上对本发明实施例进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的一般技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。

Claims (10)

  1. 一种OLED显示面板，其中，包括；
    基板；
    半透明阴极，形成在所述基板上；
    发光层，形成在所述半透明阴极背离所述基板的一侧；
    透明阳极，形成在所述发光层背离所述半透明阴极的一侧；及
    光致变色层，形成在所述透明阳极背离所述发光层的一侧，所述光致变色层包括在光激发下由透明到不透明变化的光致变色材料，所述发光层发出的光线包括用于激发所述光致变色材料的波长。
  2. 如权利要求1所述的OLED显示面板，其中，所述透明阳极采用氧化铟锡材料。
  3. 如权利要求1所述的OLED显示面板，其中，所述半透明阴极采用镁银合金。
  4. 如权利要求1所述的OLED显示面板，其中，当所述发光层不发光时，所述光致变色层在可见光范围内的透过率大于90％；当所述发光层发光时，所述光致变色层在可见光范围内的透过率小于10％。
  5. 如权利要求4所述的OLED显示面板，其中，所述光致变色材料包括卤化银、卤化锌、卤化铜、卤化镁、螺环吡喃、螺吩噁、嗪染料、脱氢吡啶中的一种或多种。
  6. 如权利要求1所述的OLED显示面板，其中，所述OLED显示面板还包括形成在所述光致变色层与所述透明阳极之间的调节层，所述调节层采用透明材质，用以调节所述光致变色层与所述透明阳极之间的间距。
  7. 如权利要求1所述的OLED显示面板，其中，所述OLED显示面板还包括：
    空穴注入层，形成在所述透明阳极背离所述光致变色层的一侧；
    空穴传输层，形成在所述空穴注入层与所述发光层之间；
    电子传输层，形成在所述发光层背离所述空穴传输层的一侧；及
    电子注入层，形成在所述电子传输层与所述半透明阴极之间。
  8. 一种OLED显示面板的制备方法，其中，包括：
    在基板上依次形成半透明阴极、发光层以及透明阳极；
    在所述透明阳极背离所述发光层的一侧上形成光致变色层，所述光致变色层包括在光激发下由透明到不透明变化的光致变色材料，所述发光层发出的光线包括用于激发所述光致变色材料的波长。
  9. 如权利要求8所述的OLED显示面板的制备方法，其中，所述在基板上依次形成半透明阴极、发光层以及透明阳极包括：
    通过蒸镀方式在所述基板上沉积镁银合金材料，以形成所述半透明阴极；
    通过蒸镀方式在所述半透明阴极背离所述基板的一侧沉积发光材料，以形成所述发光层；及
    通过蒸镀方式在所述发光层背离所述半透明阴极的一侧沉积氧化铟锡材料，以形成所述透明阳极。
  10. 如权利要求9所述的OLED显示面板的制备方法，其中，所述在所述透明阳极背离所述发光层的一侧上形成光致变色层包括：
    在所述透明阳极背离所述发光层的一侧上，通过蒸镀、溅射或者电子束方式沉积所述光致变色材料，以形成所述光致变色层。
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