WO2017173681A1 - 一种量子点光源及量子点背光模组 - Google Patents

一种量子点光源及量子点背光模组 Download PDF

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Publication number
WO2017173681A1
WO2017173681A1 PCT/CN2016/080153 CN2016080153W WO2017173681A1 WO 2017173681 A1 WO2017173681 A1 WO 2017173681A1 CN 2016080153 W CN2016080153 W CN 2016080153W WO 2017173681 A1 WO2017173681 A1 WO 2017173681A1
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Prior art keywords
quantum dot
layer
light emitting
circuit board
light
Prior art date
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Ceased
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PCT/CN2016/080153
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English (en)
French (fr)
Inventor
樊勇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Priority to US15/038,621 priority Critical patent/US10088132B2/en
Publication of WO2017173681A1 publication Critical patent/WO2017173681A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S19/00—Lighting devices or systems employing combinations of electric and non-electric light sources; Replacing or exchanging electric light sources with non-electric light sources or vice versa
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V19/00—Fastening of light sources or lamp holders
    • F21V19/001—Fastening of light sources or lamp holders the light sources being semiconductors devices, e.g. LEDs
    • F21V19/0015—Fastening arrangements intended to retain light sources
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
    • F21V9/30—Elements containing photoluminescent material distinct from or spaced from the light source
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0013—Means for improving the coupling-in of light from the light source into the light guide
    • G02B6/0023—Means for improving the coupling-in of light from the light source into the light guide provided by one optical element, or plurality thereof, placed between the light guide and the light source, or around the light source
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0066—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form characterised by the light source being coupled to the light guide
    • G02B6/0068—Arrangements of plural sources, e.g. multi-colour light sources
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0066—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form characterised by the light source being coupled to the light guide
    • G02B6/0073—Light emitting diode [LED]
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0081—Mechanical or electrical aspects of the light guide and light source in the lighting device peculiar to the adaptation to planar light guides, e.g. concerning packaging
    • G02B6/0086—Positioning aspects
    • G02B6/009—Positioning aspects of the light source in the package
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133603—Direct backlight with LEDs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/10—Arrangement of heat-generating components to reduce thermal damage, e.g. by distancing heat-generating components from other components to be protected
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2103/00—Elongate light sources, e.g. fluorescent tubes
    • F21Y2103/10—Elongate light sources, e.g. fluorescent tubes comprising a linear array of point-like light-generating elements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0065—Manufacturing aspects; Material aspects
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

Definitions

  • the invention relates to a field display panel, in particular to a quantum dot light source and a quantum dot backlight module.
  • the conventional liquid crystal display panel it does not emit light by itself, and needs to be displayed by means of an external light source.
  • the external light source has two kinds of backlight source and reflective light source, and the backlight source is active illumination, which is not affected by environmental changes, so At present, most of the backlight sources are used.
  • LEDs are mostly used in backlight sources because of their low energy consumption, low heat generation and long life. Fluorescent luminescent materials are widely used in today's LEDs, but the phosphors have large light fading, poor particle uniformity, and insufficient color expression.
  • Quantum dots can emit fluorescence under the excitation of light, and quantum dots of different sizes can be excited to generate light of different frequencies.
  • the quantum dots are easily damaged by the influence of high temperature and oxygen. Therefore, the current backlight module does not find a suitable quantum dot setting method, and the existing quantum dot light source requires high cost in manufacturing.
  • the invention mainly solves the problem of high cost of the quantum dot source in the prior art.
  • the present invention provides a quantum dot light source
  • the light source comprises a light bar and a quantum dot film
  • the light bar comprises a circuit board and a plurality of light emitting diodes, and a plurality of receiving cavities are recessed from an outer side of the circuit board,
  • the accommodating cavity is used for arranging the light emitting diode and the light emitting diode does not extend beyond the outer side of the circuit board
  • the quantum dot film covers the accommodating cavity of the circuit board
  • the circuit board comprises a metal substrate, an insulating layer and a copper layer, and the accommodating cavity is disposed on the metal substrate
  • the insulating layer is disposed on the bottom surface of the accommodating cavity
  • the copper layer is disposed on the insulating layer
  • the light emitting diode is disposed on the copper layer, and is electrically connected to the copper layer
  • the quantum dot film comprises a quantum dot layer and an isolation layer covering the quantum dot layer.
  • the concave surface is provided with a cement layer on the outer side surface of the accommodating cavity to bond the quantum dot film.
  • the present invention further provides a quantum dot light source, the light source comprises a light bar and a quantum dot film, the light bar comprises a circuit board and a plurality of light emitting diodes, and a plurality of receiving cavities are recessed from an outer side of the circuit board
  • the accommodating cavity is used for arranging the light emitting diode and the light emitting diode does not extend beyond the outer side of the circuit board; the quantum dot film covers the accommodating cavity of the circuit board.
  • the circuit board comprises a metal substrate, an insulating layer and a copper layer, the accommodating cavity is disposed on the metal substrate, the insulating layer is disposed on the bottom surface of the accommodating cavity, the copper layer is disposed on the insulating layer, and the light emitting diode is disposed on the copper layer, and The copper layer is electrically connected.
  • the concave surface is provided with a cement layer on the outer side surface of the accommodating cavity to bond the quantum dot film.
  • the metal substrate is an aluminum plate.
  • the quantum dot film comprises a quantum dot layer and an isolation layer encapsulating the quantum dot layer.
  • the isolation layer comprises a lower isolation layer between the quantum dot layer and the circuit board, and an upper isolation layer opposite to the lower isolation layer.
  • the light emitting diode is a blue light emitting diode.
  • two light emitting diodes are placed in each of the accommodating cavities.
  • the light emitting diode does not extend beyond the outer side of the circuit board, and the vertical distance between the top end of the light emitting diode and the outer side surface is 2.5 mm to 3.5 mm.
  • the present invention also provides a quantum dot backlight module, which includes a quantum dot light source and a light guide plate, the quantum dot light source is disposed on the light incident surface of the light guide plate, and the quantum dot light source includes a light bar and a quantum a light film comprising a circuit board and a plurality of light emitting diodes, wherein a plurality of receiving cavities are recessed from an outer side of the circuit board, the receiving cavity is for placing the light emitting diodes and the light emitting diodes do not extend beyond the outer side of the circuit board; the quantum dots The film covers the receiving cavity of the circuit board.
  • the circuit board comprises a metal substrate, an insulating layer and a copper layer, the accommodating cavity is disposed on the metal substrate, the insulating layer is disposed on the bottom surface of the accommodating cavity, the copper layer is disposed on the insulating layer, and the light emitting diode is disposed on the copper layer, and The copper layer is electrically connected.
  • the concave surface is provided with a cement layer on the outer side surface of the accommodating cavity to bond the quantum dot film.
  • the metal substrate is an aluminum plate.
  • the quantum dot film comprises a quantum dot layer and an isolation layer encapsulating the quantum dot layer.
  • the isolation layer comprises a lower isolation layer between the quantum dot layer and the circuit board, and an upper isolation layer opposite to the lower isolation layer.
  • the light emitting diode is a blue light emitting diode.
  • two light emitting diodes are placed in each of the accommodating cavities.
  • the light emitting diode does not extend beyond the outer side of the circuit board, and the vertical distance between the top end of the light emitting diode and the outer side surface is 2.5 mm to 3.5 mm.
  • the quantum dot light source of the present invention comprises a light bar and a quantum dot film
  • the light bar comprises a circuit board and a plurality of light emitting diodes
  • an outer side of the circuit board is recessed with a plurality of receiving cavities for accommodating the light emitting diodes and emitting light
  • the diode does not extend beyond the outer side of the circuit board, and the quantum dot film covers the receiving cavity of the circuit board.
  • the invention is generally applied to a side-entry light source, and the quantum dot film can be covered on the side of the light bar, and the quantum dot film used is less. The cost is lower.
  • FIG. 1 is a schematic structural view of an embodiment of a quantum dot source of the present invention
  • FIG. 2 is a schematic structural view of an embodiment of a quantum dot backlight module of the present invention
  • FIG. 1 is a schematic structural view of an embodiment of a quantum dot source of the present invention.
  • the quantum dot source 100 of the present embodiment includes a light bar 11 and a quantum dot film 12.
  • the quantum dot film 12 contains quantum dots of different sizes, and quantum dots of different sizes emit light of different colors under the excitation of light emitted by the light bar 11, and the color purity of the light is high, and the color is high by RGB
  • the quantum dot film made by the dot can produce RGB three-color light with high color purity, and is applied to the liquid crystal panel to improve the color gamut performance of the liquid crystal panel. This is the principle of illumination of the quantum dot source 100, so that the light emitted by the strip 11 needs to be irradiated onto the quantum dot film 12.
  • the light bar 11 includes a circuit board 111 and a light emitting diode 112.
  • the light emitting diode 112 is electrically connected to the circuit board 111.
  • the light emitting diode 112 obtains electric energy through the circuit board 111 to emit light.
  • the light emitting diode 112 is generally selected as a blue light emitting diode.
  • an outer side surface 113 is recessed and disposed with a plurality of accommodating cavities 114.
  • the light emitting diodes 112 are disposed in the accommodating cavity 114 and do not extend beyond the outer side surface 113 of the circuit board 111.
  • the accommodating cavity 114 may be a square groove, a circular groove, or other shapes; a square groove is generally selected to facilitate the installation of the circuit and the installation of the LED 12.
  • two light emitting diodes 112 or a plurality of light emitting diodes 112 can be disposed in one of the accommodating cavities 114.
  • the quantum dot film 12 is overlaid on the accommodating cavity 114 of the circuit board 111 so that the light emitted from the light emitting diode 112 can be incident on the quantum dot film 12.
  • the vertical distance h between the top end and the outer side surface is 2.5 mm to 3.5 mm, and is generally set to 3 mm, that is, between the LED 112 and the quantum dot film 12.
  • the circuit board 111 includes a metal substrate 1111, an insulating layer 1112, and a copper layer 1113.
  • the main body is made of a metal substrate 1111, and an aluminum plate is generally selected.
  • the accommodating cavity 114 is disposed on the metal substrate 1111, that is, the one side of the metal substrate 1111 is recessed inward to form the accommodating cavity 114. Since the circuit board 111 is mainly used to supply power to the light emitting diode 112, the light emitting diode 112 is placed in the accommodating cavity 114.
  • the bottom surface of the accommodating cavity 114 is provided with a circuit composed of a copper layer 1113, and an insulating layer 1112 is disposed between the copper layer 1113 and the metal substrate 1111, and the light emitting diode 112 is disposed on the copper layer 1113. It is electrically connected to the copper layer 1113.
  • the quantum dot film 12 is a single film, and the outer side surface 113 is a flat surface.
  • the quantum dot film 12 covers the outer side surface 113, and thus is recessed.
  • a cement layer 13 is further disposed on the outer side surface 113 of the accommodating cavity 114 to bond the quantum dot film 12.
  • the quantum dot film 12 specifically further includes a quantum dot layer 121 and an isolation layer 122 encapsulating the quantum dot layer 121.
  • the isolation layer 122 serves to prevent the quantum dot layer 121 from being exposed to oxygen and moisture, causing failure.
  • the isolation layer 122 includes a lower isolation layer between the quantum dot layer 121 and the circuit board 111, and an upper isolation layer opposite the lower isolation layer.
  • the isolation layer 122 is integrally coated with the quantum dot layer 121. In addition to the upper and lower isolation layers shown in FIG. 1, a corresponding isolation layer is also coated around it.
  • the quantum dot light source of the present embodiment includes a light bar and a quantum dot film
  • the light bar includes a circuit board and a plurality of light emitting diodes
  • an outer side of the circuit board is recessed to provide a plurality of receiving cavities, and the receiving cavity is used.
  • the LED is placed on the outer side of the circuit board, and the quantum dot film covers the receiving cavity of the circuit board.
  • the present invention is generally applied to a side-in type light source, and the quantum dot film is covered on the side of the light bar. The quantum dot film is less and the cost is lower.
  • FIG. 2 is a schematic structural diagram of an embodiment of a quantum dot backlight module of the present invention.
  • the quantum dot backlight module 200 of the present embodiment includes a quantum dot source 21 and a light guide plate 22 , and the quantum dot source 21 is disposed on the light incident surface 221 of the light guide plate 22 .
  • the quantum dot light source 21 includes a light bar 211 and a quantum dot film 212, and the structure thereof is the same as that of the quantum dot light source 100 described above. The specific structure will not be described again. Referring to FIG. 1, FIG. 1 is the Z direction of FIG. Perspective view.
  • the quantum dot backlight module of the present embodiment includes a quantum dot light source and a light guide plate, that is, the foregoing quantum dot light source is applied to the side light source, which reduces manufacturing cost and has stable illumination quality.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Planar Illumination Modules (AREA)
  • Led Device Packages (AREA)

Abstract

一种量子点光源（100）及量子点背光模组（200），其中量子点光源（100）包括灯条（11）和量子点膜（12），灯条（11）包括电路板（111）和多个发光二极管（112），自电路板（111）的一外侧面（113）凹陷设置多个容置腔（114），容置腔（114）用于安放发光二极管（112）且发光二极管（112）不超出电路板（111）的外侧面（113）；量子点膜（12）覆盖电路板（111）的容置腔（114）。量子点光源制造成本较低，且发光质量稳定。

Description

一种量子点光源及量子点背光模组
【技术领域】
本发明涉及领域显示面板，特别涉及一种量子点光源及量子点背光模组。
【背景技术】
对于传统的液晶显示面板，其本身并不发光，需要借助外部光源才能进行显示，通常来说外加光源有背光光源和反射式光源两种，背光光源是主动发光，不受环境变化的影响，因此目前大多采用背光光源。
由于发光二极管LED能耗低、发热少、寿命长，因此多应用于背光光源中。现今的LED广泛使用荧光粉发光材料，但荧光粉的光衰大、颗粒均匀度差，发出的光色彩表现力不够。
现在大多开始采用量子点光源。量子点在光的激发下可以发射荧光，并且不同尺寸的量子点，受激发后能够产生不同频率的光。但量子点受高温和氧气的影响容易失效，因此目前背光模组并未找到合适的量子点设置方式，现有的量子点光源制造起来均需要较高的成本。
【发明内容】
本发明主要解决现有技术中量子点光源成本较高的问题。
为解决上述技术问题，本发明提出一种量子点光源，光源包括灯条和量子点膜，灯条包括电路板和多个发光二极管，自电路板的一外侧面凹陷设置多个容置腔，容置腔用于安放发光二极管且发光二极管不超出电路板的外侧面；量子点膜覆盖电路板的容置腔；电路板包括金属基板、绝缘层以及铜层，容置腔设置于金属基板上，绝缘层设置于容置腔的底面，铜层设置于绝缘层上，发光二极管设置于铜层上，与铜层电连接；量子点膜包括量子点层和包裹量子点层的隔离层。
其中，凹陷设置了容置腔的外侧面上设置有胶结层，以粘接量子点膜。
为解决上述技术问题，本发明又提出一种量子点光源，光源包括灯条和量子点膜，灯条包括电路板和多个发光二极管，自电路板的一外侧面凹陷设置多个容置腔，容置腔用于安放发光二极管且发光二极管不超出电路板的外侧面；量子点膜覆盖电路板的容置腔。
其中，电路板包括金属基板、绝缘层以及铜层，容置腔设置于金属基板上，绝缘层设置于容置腔的底面，铜层设置于绝缘层上，发光二极管设置于铜层上，与铜层电连接。
其中，凹陷设置了容置腔的外侧面上设置有胶结层，以粘接量子点膜。
其中，金属基板为铝板。
其中，量子点膜包括量子点层和包裹量子点层的隔离层。
其中，隔离层包括位于量子点层和电路板之间的下隔离层，以及与下隔离层相对的上隔离层。
其中，发光二极管为蓝光发光二极管。
其中，每一容置腔中安放两个发光二极管。
其中，发光二极管不超出电路板的外侧面，且发光二极管顶端与外侧面的垂直距离为2.5mm~3.5mm。
为解决上述技术问题，本发明还提出一种量子点背光模组，该背光模组包括量子点光源以及导光板，量子点光源设置在导光板的入光面，量子点光源包括灯条和量子点膜，灯条包括电路板和多个发光二极管，自电路板的一外侧面凹陷设置多个容置腔，容置腔用于安放发光二极管且发光二极管不超出电路板的外侧面；量子点膜覆盖电路板的容置腔。
其中，电路板包括金属基板、绝缘层以及铜层，容置腔设置于金属基板上，绝缘层设置于容置腔的底面，铜层设置于绝缘层上，发光二极管设置于铜层上，与铜层电连接。
其中，凹陷设置了容置腔的外侧面上设置有胶结层，以粘接量子点膜。
其中，金属基板为铝板。
其中，量子点膜包括量子点层和包裹量子点层的隔离层。
其中，隔离层包括位于量子点层和电路板之间的下隔离层，以及与下隔离层相对的上隔离层。
其中，发光二极管为蓝光发光二极管。
其中，每一容置腔中安放两个发光二极管。
其中，发光二极管不超出电路板的外侧面，且发光二极管顶端与外侧面的垂直距离为2.5mm~3.5mm。
本发明的量子点光源包括灯条和量子点膜，该灯条包括电路板和多个发光二极管，电路板的一外侧面凹陷设置多个容置腔，容置腔用于安放发光二极管且发光二极管不超出电路板的外侧面，量子点膜覆盖电路板的容置腔，本发明一般应用于侧入式光源，将量子点膜覆盖在灯条侧即可，使用的量子点膜较少，成本较低。
【附图说明】
图1是本发明量子点光源一实施方式的结构示意图；
图2是本发明量子点背光模组一实施方式的结构示意图
【具体实施方式】
参阅图1，图1是本发明量子点光源一实施方式的结构示意图，本实施方式量子点光源100包括灯条11和量子点膜12。
量子点膜12中包含不同尺寸的量子点，不同尺寸的量子点在灯条11所发出的光的激发下，发射出不同颜色的光线，且该光线的色彩纯度很高，由RGB三色量子点制成的量子点膜能够产生色彩纯度很高的RGB三色光线，应用于液晶面板中，能够提高液晶面板的色域表现。此即量子点光源100的发光原理，因此灯条11所发出的光线需照射到量子点膜12。
灯条11包括电路板111和发光二极管112，发光二极管112电连接电路板111，发光二极管112通过电路板111获得电能从而发光。为了激发量子点膜12发射光线，发光二极管112通常选用蓝光发光二极管。
对于电路板111，其一外侧面113凹陷设置有多个容置腔114，发光二极管112安放于容置腔114内，且不超出电路板111的外侧面113。其中容置腔114可以是方形槽，也可为圆形槽，或其它形状；一般选用方形槽，便于电路的设置以及发光二极管12的安装。并且一个容置腔114内可安放两个发光二极管112或多个发光二极管112。
量子点膜12则覆盖在电路板111的容置腔114上，以使得发光二极管112发出的光线能够照射到量子点膜12。并且本实施方式中发光二极管112设置在容置腔114中后，其顶端与外侧面的垂直距离h为2.5mm~3.5mm，一般设置为3mm，即发光二极管112与量子点膜12之间有足够的空间，以保证电路板111以及发光二极管112产生的热量不会影响到量子点膜12，从而使得量子点膜12的寿命大大延长。
本实施方式中，电路板111包括金属基板1111、绝缘层1112以及铜层1113，其主体由金属基板1111制成，一般选用铝板。容置腔114设置在金属基板1111上，即金属基板1111的一侧向内凹陷形成该容置腔114，由于该电路板111主要用于为发光二极管112提供电能，而发光二极管112安放于容置腔114内，因此容置腔114的底面设置有由铜层1113构成的电路，而铜层1113与金属基板1111之间设置有绝缘层1112，发光二极管112则设置在铜层1113上，并与铜层1113电连接。
一般来说，量子点膜12为一整片膜，且外侧面113为一平面，当量子点膜12覆盖在容置腔114上时，即量子点膜12覆盖在外侧面113上，因此在凹陷设置了容置腔114的外侧面113上还设置有胶结层13，以粘接量子点膜12。
量子点膜12具体还包括量子点层121和包裹量子点层121的隔离层122，隔离层122用于防止量子点层121接触到氧气和水分，发生失效。隔离层122包括位于量子点层121和电路板111之间的下隔离层，以及与下隔离层相对的上隔离层。隔离层122对量子点层121实现的是整体包覆，除了图1中所示的上下隔离层，在其四周也包覆有相应的隔离层。
区别于现有技术，本实施方式量子点光源包括灯条和量子点膜，该灯条包括电路板和多个发光二极管，电路板的一外侧面凹陷设置多个容置腔，容置腔用于安放发光二极管且发光二极管不超出电路板的外侧面，量子点膜覆盖电路板的容置腔，本发明一般应用于侧入式光源，将量子点膜覆盖在灯条侧即可，使用的量子点膜较少，成本较低。
请参与图2，图2是本发明量子点背光模组一实施方式的结构示意图。本实施方式量子点背光模组200包括量子点光源21和导光板22，量子点光源21设置在导光板22的入光面221。
量子点光源21包括灯条211和量子点膜212，其结构与上文所述的量子点光源100的结构相同，具体结构不再赘述，结合图1可知，图1是图2在Z方向上的透视图。
区别于现有技术，本实施方式量子点背光模组包括量子点光源以及导光板，即将前述量子点光源应用于侧光源，降低了制造成本，且具有稳定的发光质量。
以上所述仅为本发明的实施方式，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (20)

  1. 一种量子点光源，其中，所述光源包括灯条和量子点膜，所述灯条包括电路板和多个发光二极管，自所述电路板的一外侧面凹陷设置多个容置腔，所述容置腔用于安放所述发光二极管且所述发光二极管不超出所述电路板的外侧面；所述量子点膜覆盖所述电路板的容置腔；
    所述电路板包括金属基板、绝缘层以及铜层，所述容置腔设置于所述金属基板上，所述绝缘层设置于所述容置腔的底面，所述铜层设置于所述绝缘层上，所述发光二极管设置于所述铜层上，与所述铜层电连接；
    所述量子点膜包括量子点层和包裹所述量子点层的隔离层。
  2. 根据权利要求1所述的量子点光源，其中，凹陷了设置所述容置腔的所述外侧面上设置有胶结层，以粘接所述量子点膜。
  3. 一种量子点光源，其中，所述光源包括灯条和量子点膜，所述灯条包括电路板和多个发光二极管，自所述电路板的一外侧面凹陷设置多个容置腔，所述容置腔用于安放所述发光二极管且所述发光二极管不超出所述电路板的外侧面；所述量子点膜覆盖所述电路板的容置腔。
  4. 根据权利要求3所述的量子点光源，其中，所述电路板包括金属基板、绝缘层以及铜层，所述容置腔设置于所述金属基板上，所述绝缘层设置于所述容置腔的底面，所述铜层设置于所述绝缘层上，所述发光二极管设置于所述铜层上，与所述铜层电连接。
  5. 根据权利要求4所述的量子点光源，其中，凹陷了设置所述容置腔的所述外侧面上设置有胶结层，以粘接所述量子点膜。
  6. 根据权利要求4所述的量子点光源，其中，所述金属基板为铝板。
  7. 根据权利要求3所述的量子点光源，其中，所述量子点膜包括量子点层和包裹所述量子点层的隔离层。
  8. 根据权利要求7所述的量子点光源，其中，所述隔离层包括位于所述量子点层和所述电路板之间的下隔离层，以及与所述下隔离层相对的上隔离层。
  9. 根据权利要求3所述的量子点光源，其中，所述发光二极管为蓝光发光二极管。
  10. 根据权利要求3所述的量子点光源，其中，每一所述容置腔中安放两个所述发光二极管。
  11. 根据权利要求3所述的量子点光源，其中，所述发光二极管不超出所述电路板的外侧面，且所述发光二极管与所述外侧面的在垂直方向上的距离为2.5mm~3.5mm。
  12. 一种量子点背光模组，其中，所述背光模组包括量子点光源以及导光板，所述量子点光源设置于所述导光板的入光面，所述量子点光源包括灯条和量子点膜，所述灯条包括电路板和多个发光二极管，自所述电路板的一外侧面凹陷设置多个容置腔，所述容置腔用于安放所述发光二极管且所述发光二极管不超出所述电路板的外侧面；所述量子点膜覆盖所述电路板的容置腔。
  13. 根据权利要求12所述的量子点背光模组，其中，所述电路板包括金属基板、绝缘层以及铜层，所述容置腔设置于所述金属基板上，所述绝缘层设置于所述容置腔的底面，所述铜层设置于所述绝缘层上，所述发光二极管设置于所述铜层上，与所述铜层电连接。
  14. 根据权利要求13所述的量子点光源，其中，凹陷了设置所述容置腔的所述外侧面上设置有胶结层，以粘接所述量子点膜。
  15. 根据权利要求13所述的量子点光源，其中，所述金属基板为铝板。
  16. 根据权利要求12所述的量子点光源，其中，所述量子点膜包括量子点层和包裹所述量子点层的隔离层。
  17. 根据权利要求16所述的量子点光源，其中，所述隔离层包括位于所述量子点层和所述电路板之间的下隔离层，以及与所述下隔离层相对的上隔离层。
  18. 根据权利要求12所述的量子点光源，其中，所述发光二极管为蓝光发光二极管。
  19. 根据权利要求12所述的量子点光源，其中，每一所述容置腔中安放两个所述发光二极管。
  20. 根据权利要求12所述的量子点光源，其中，所述发光二极管不超出所述电路板的外侧面，且所述发光二极管与所述外侧面的在垂直方向上的距离为2.5mm~3.5mm。
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