WO2017159973A3 - Thin film manufacturing method using light - Google Patents

Thin film manufacturing method using light Download PDF

Info

Publication number
WO2017159973A3
WO2017159973A3 PCT/KR2016/015413 KR2016015413W WO2017159973A3 WO 2017159973 A3 WO2017159973 A3 WO 2017159973A3 KR 2016015413 W KR2016015413 W KR 2016015413W WO 2017159973 A3 WO2017159973 A3 WO 2017159973A3
Authority
WO
WIPO (PCT)
Prior art keywords
thin film
light
film manufacturing
substrate
forming
Prior art date
Application number
PCT/KR2016/015413
Other languages
French (fr)
Korean (ko)
Other versions
WO2017159973A2 (en
Inventor
이건재
박정환
박대용
Original Assignee
한국과학기술원
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 한국과학기술원 filed Critical 한국과학기술원
Publication of WO2017159973A2 publication Critical patent/WO2017159973A2/en
Publication of WO2017159973A3 publication Critical patent/WO2017159973A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76868—Forming or treating discontinuous thin films, e.g. repair, enhancement or reinforcement of discontinuous thin films
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02601—Nanoparticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02603—Nanowires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76855—After-treatment introducing at least one additional element into the layer
    • H01L21/76856—After-treatment introducing at least one additional element into the layer by treatment in plasmas or gaseous environments, e.g. nitriding a refractory metal liner
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
    • H01L21/76862—Bombardment with particles, e.g. treatment in noble gas plasmas; UV irradiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
    • H01L21/76864—Thermal treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Powder Metallurgy (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)

Abstract

Provided is a thin film manufacturing method comprising the steps of: forming a thin film on a substrate; and forming a chemical and physical bond at an interface between the thin film and the substrate by emitting light at the thin film.
PCT/KR2016/015413 2016-03-18 2016-12-28 Thin film manufacturing method using light WO2017159973A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2016-0032786 2016-03-18
KR1020160032786A KR20170108612A (en) 2016-03-18 2016-03-18 Method for manufacturing thin film using light

Publications (2)

Publication Number Publication Date
WO2017159973A2 WO2017159973A2 (en) 2017-09-21
WO2017159973A3 true WO2017159973A3 (en) 2018-03-08

Family

ID=59851020

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2016/015413 WO2017159973A2 (en) 2016-03-18 2016-12-28 Thin film manufacturing method using light

Country Status (2)

Country Link
KR (1) KR20170108612A (en)
WO (1) WO2017159973A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115260567B (en) * 2022-08-24 2023-05-05 天津大学 Method for preparing micrometer/nanometer pore polymer film

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110047766A (en) * 2009-10-30 2011-05-09 엘지디스플레이 주식회사 Method of fabricating color filter using surface plasmon and method of fabricating liquid crystal display device
JP2014208469A (en) * 2013-03-29 2014-11-06 昭和電工株式会社 Substrate for forming transparent conductive pattern, substrate with transparent conductive pattern formed therein, and method for manufacturing substrate with transparent conductive pattern formed therein
KR20150004355A (en) * 2012-04-26 2015-01-12 오사카 유니버시티 Transparent conductive ink, and method for producing transparent conductive pattern
KR20150107091A (en) * 2014-03-13 2015-09-23 주식회사 에이든 Transparent conductors using silver nanowires
KR101595895B1 (en) * 2014-08-11 2016-02-19 주식회사 엔앤비 Film for transparent electrode with welded silver nanowire by light sintering, Dispersion liquid for welding silver nanowire, and Welding method of silver nanowire by light sintering

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110047766A (en) * 2009-10-30 2011-05-09 엘지디스플레이 주식회사 Method of fabricating color filter using surface plasmon and method of fabricating liquid crystal display device
KR20150004355A (en) * 2012-04-26 2015-01-12 오사카 유니버시티 Transparent conductive ink, and method for producing transparent conductive pattern
JP2014208469A (en) * 2013-03-29 2014-11-06 昭和電工株式会社 Substrate for forming transparent conductive pattern, substrate with transparent conductive pattern formed therein, and method for manufacturing substrate with transparent conductive pattern formed therein
KR20150107091A (en) * 2014-03-13 2015-09-23 주식회사 에이든 Transparent conductors using silver nanowires
KR101595895B1 (en) * 2014-08-11 2016-02-19 주식회사 엔앤비 Film for transparent electrode with welded silver nanowire by light sintering, Dispersion liquid for welding silver nanowire, and Welding method of silver nanowire by light sintering

Also Published As

Publication number Publication date
KR20170108612A (en) 2017-09-27
WO2017159973A2 (en) 2017-09-21

Similar Documents

Publication Publication Date Title
EP3483639A3 (en) Window for display device, method for fabricating the same and display device including the same
EP3163625A3 (en) Organic light emitting display device and method of manufacturing the same
EP3329513A4 (en) Light emitting diode, display substrate and display device having the same, and fabricating method thereof
WO2015103394A3 (en) A metal thin film resistor and process
EP2863446A3 (en) Flexible organic light emitting diode display and manufacturing method thereof
WO2016064860A3 (en) Composition for forming a patterned metal film on a substrate
EP3109908A3 (en) Light emitting device and manufacturing method thereof
EP3734678A4 (en) Perovskite film layer, device and manufacturing method for effectively improving efficiency of light-emitting device
WO2018110830A3 (en) Window film, manufacturing method thereof, and display device including same
WO2018097654A3 (en) Fluorene derivative, organic light emitting device using same, and manufacturing method therefor
EP2790237A3 (en) Flexible substrate, method of manufacturing the same, and organic light emitting diode display
WO2012001478A3 (en) Wafer-type light emitting device with precisely coated wavelength-conversion layer
EP3326220A4 (en) Light emitting diode, display substrate and display apparatus having the same, and fabricating method thereof
WO2018101743A3 (en) Laminate
WO2014210507A3 (en) Organic photovoltaic films using thin flexible substrates with pressure-sensitive adhesives
EP3555922A4 (en) Organic light emitting diode display substrate, organic light emitting diode display apparatus, and method of fabricating organic light emitting diode display substrate
EP3465794A4 (en) Method of fabricating a light extraction layer, light emitting diode display apparatus, and light emitting diode display substrate
WO2017052308A3 (en) Organic compound to be used in organic device, and method for manufacturing organic device by using same
EP3635787A4 (en) Light-emitting diode, array substrate, and method of making the same
EP3523460A4 (en) Sapphire thin film coated substrate
EP3871263A4 (en) Display device using semiconductor light emitting device and method for manufacturing the same
EP3866186A4 (en) Silicon-based base, base substrate and manufacturing method therefor, and optoelectronic device
EP3688810A4 (en) Organic light emitting diode display substrate, organic light emitting diode display apparatus, and method of fabricating organic light emitting diode display substrate
SG11202002853TA (en) Substrate with a multilayer reflective film, reflective mask blank, reflective mask and method of manufacturing semiconductor device
EP3750190A4 (en) Organic light emitting diode display panel, organic light emitting diode counter substrate, and fabricating method thereof

Legal Events

Date Code Title Description
NENP Non-entry into the national phase

Ref country code: DE

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 16894703

Country of ref document: EP

Kind code of ref document: A2

122 Ep: pct application non-entry in european phase

Ref document number: 16894703

Country of ref document: EP

Kind code of ref document: A2