WO2017144040A1 - Vorrichtung verfahren und anlage zu der inhomogenen abkühlung eines flächigen gegenstandes - Google Patents
Vorrichtung verfahren und anlage zu der inhomogenen abkühlung eines flächigen gegenstandes Download PDFInfo
- Publication number
- WO2017144040A1 WO2017144040A1 PCT/DE2017/100013 DE2017100013W WO2017144040A1 WO 2017144040 A1 WO2017144040 A1 WO 2017144040A1 DE 2017100013 W DE2017100013 W DE 2017100013W WO 2017144040 A1 WO2017144040 A1 WO 2017144040A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- cooling
- heat
- main surface
- solder
- cavity
- Prior art date
Links
- 238000001816 cooling Methods 0.000 title claims abstract description 58
- 238000000034 method Methods 0.000 title claims abstract description 19
- 229910000679 solder Inorganic materials 0.000 claims abstract description 39
- 239000012528 membrane Substances 0.000 claims abstract description 23
- 238000009826 distribution Methods 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 34
- 239000004065 semiconductor Substances 0.000 claims description 22
- 238000005476 soldering Methods 0.000 claims description 15
- 239000000110 cooling liquid Substances 0.000 claims description 14
- 239000004020 conductor Substances 0.000 claims description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- 238000007789 sealing Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 4
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 3
- 238000007373 indentation Methods 0.000 claims 1
- 239000012809 cooling fluid Substances 0.000 abstract 2
- 238000007711 solidification Methods 0.000 description 10
- 230000008023 solidification Effects 0.000 description 10
- 239000007788 liquid Substances 0.000 description 4
- 239000002826 coolant Substances 0.000 description 3
- 239000011796 hollow space material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004870 electrical engineering Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
- B23K1/0016—Brazing of electronic components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
- B23K3/08—Auxiliary devices therefor
- B23K3/085—Cooling, heat sink or heat shielding means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
- H01L21/4882—Assembly of heatsink parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4338—Pistons, e.g. spring-loaded members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D11/00—Process control or regulation for heat treatments
- C21D11/005—Process control or regulation for heat treatments for cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3494—Heating methods for reflowing of solder
Definitions
- the invention describes a device and an associated method for the inhomogeneous cooling of a flat object, in particular from the field of electrical engineering. Furthermore, the application of the device in a system, more precisely a soldering system for electrical components is described.
- solder joint To connect solder joint with each other or with a component carrier. To produce such a solder joint liquefied solder, which is arranged between the two elements to be connected and is in contact with the elements to be connected, cooled below the melting point. The solidified by the cooling solder forms a cohesive solder joint of the two elements.
- solder joint in the case of flat solder joints, it is desirable for the solder joint to form a homogeneous layer, that is to say a layer without gas inclusions, so-called voids.
- Heat sink causes a targeted inhomogeneous cooling of the solder.
- a shortcoming of the prior art cooling device is the complex control of the controlled heat sink.
- the invention has for its object to provide a device and an associated method, which causes a simple way inhomogeneous cooling of a major surface of a sheet-like object, and to provide a soldering machine, in which this device can be arranged.
- the device according to the invention serves for the inhomogeneous cooling of a planar article having a first main surface and a second main surface opposite this.
- the planar article is cooled selectively from the direction of the first main surface by a cooling device, wherein the cooling device has a cavity, which is designed to be flowed through by cooling liquid, which here also includes other cooling media, and which faces the flat article Side is limited by an elastic membrane.
- a heat conduction body is arranged to this elastic membrane, which is adapted to be in thermal contact by means of a heat receiving surface with a partial surface of the first main surface of the sheet article and by means of a heat transfer surface with the cooling liquid, whereby the second main surface and in particular the intermediate Lot of the flat article during the cooling process has an inhomogeneous temperature distribution at least in a partial period of cooling.
- cooling of the second main surface is understood in particular to mean that the volume of the planar article adjacent thereto, ie its volume region extending from the second main surface into the interior of the article, is also cooled
- surface should not be understood explicitly in the mathematical sense, but rather as a surface, which may thus have a certain topology, ie differences in height in its course.
- heat-conducting body is at least one heat-conducting body.
- the flat article is a base plate of a
- Power semiconductor module with power electronics arranged thereon
- the sheet article may be arranged with a power electronic substrate
- the cooled solder is arranged.
- the heat-conducting body has a circumferential intake, which is arranged in a recess of the elastic membrane.
- the heat-conducting body may be formed integrally, but preferably in two pieces, with a first part body outside the hollow space and a second part body inside the hollow space. This first and second part body are preferably connected to one another in a force-locking manner, wherein this connection is preferably formed by means of a screw.
- both partial bodies each have a sealing surface circumferentially around a recess of the membrane, said sealing surfaces are preferably arranged in alignment with each other.
- the heat-conducting body is made of a material which is very highly thermally conductive, preferably of copper or of a copper alloy with a high copper content. It may be useful if the
- Main surface has the following steps: a. the cavity of the cooling device is filled with a cooling liquid; b. the flat object becomes with a partial surface of its first
- a soldering system according to the invention with a device described above is preferably designed as a continuous soldering machine with a plurality of chambers.
- Such soldering machines are with different soldering, exemplified as
- Process chambers an antechamber for preheating below the soldering temperature, a main chamber in which the solder is liquefied and a cooling chamber.
- this cooling chamber the device according to the invention is arranged.
- Figure 1 shows a first embodiment of a flat article and a simplified representation of the device according to the invention.
- Figure 2 shows a second embodiment of a flat article in a side view.
- FIG. 3 shows a section of a device according to the invention.
- FIG. 4 shows a further detail of a device according to the invention.
- Figure 5 shows a time course of solidification surfaces a solder during the process of the invention.
- Figures 6 and 7 show three-dimensional representations of a device according to the invention, Figure 7 with the second sheet-like object.
- FIG. 1 shows a simplified exploded view of a first embodiment of a flat article 2 and a simplified representation of the device 1 according to the invention in a lateral view.
- This base plate 20 is a basic plate of a power semiconductor module without restriction of generality and consists of
- this base plate 20 has a solderable surface coating by way of example of a thin layer of nickel.
- two power electronic substrates 22 are arranged and are to be materially bonded, by means of a solder layer 26 with the base plate
- the power electronic substrates 22 are otherwise customary in the art and each have a layer sequence starting with a solderable layer, for connection to the base plate 20, on. This layer is followed by a layer of an industrial ceramic, which in turn is followed by a conductive layer, which is structured in itself and thus forms printed conductors. Power semiconductor components 24 are arranged on these printed conductors and are connected to them in a technically familiar manner.
- Article 2 is formed by the exposed surfaces of the base plate 20, the power electronic substrates 22 and the power semiconductor devices 24. This second surface thus has a certain topography, so a
- This flat object 2 forms a professional component of a
- the base plate 20, the solder layer 26 and the respective substrate 22 are shown spaced apart.
- the device according to the invention has a cooling device 1, which is designed here as a water cooling device.
- the cooling effect of this cooling device can be controlled in its entirety on the amount of the flowing cooling medium 12 and its temperature.
- the same functionality would also be possible with other, including gaseous, cooling media, if necessary, however, technologically more complex or possibly also with reduced cooling effect.
- the cooling device 1 furthermore has a cavity 10, which is delimited on its side facing the flat object 2, inter alia, by two elastic membranes 16. These membranes 16 is associated with a heat conducting body 3, more precisely arranged in a respective recesses 160 of these membranes 16.
- this heat conduction body 3 is formed in one piece and cylindrical and has a circumferential groove 36, that is, a collection of its side surface, with which it is fixed in an associated recess 160 of the membrane 16.
- the heat conduction body 3 by the arrangement in the recess 160 of the elastic membrane 16 in the usual technical limits in all longitudinal directions, in particular on the flat object to, as well as tilting movable.
- the heat conducting body 3 has a heat receiving surface 300, which faces the flat object 2. This heat receiving surface 310 is in the Use of the device with an associated partial surface 210 of the first
- Main surface 200 of the sheet 2 in thermally conductive contact.
- the heat conducting body 3 serves in its use and thus during the operation
- the base plates 20 of power semiconductor modules have a curvature, to which the heat conducting body 3 presented in FIG.
- the heat conducting body 3 further has a inside of the cavity 10 of the
- Cooling device 1 lying heat transfer surface 330. This serves to deliver the heat absorbed at the heat receiving surface 310 to the cooling liquid 12 efficiently.
- the device described has two essential basic advantages combined with each other.
- the first main surface of the flat object may have a certain curvature with which the movably mounted heat conducting body can come into ideal thermal contact.
- the heat dissipation through the direct thermal contact at a defined location is suitable for temporally and spatially controlling the solidification of the solder.
- a spatially inhomogeneous temperature distribution, represented by the curve 60 in the context of the cooling process with respect to the first and thus also the second major surface of the flat article and thus, of course, in particular to the solder during solidification is achieved.
- Figure 2 shows a second embodiment of a flat article 2 in a side view.
- this has a power electronic substrate 22.
- This power electronic substrate 22 is otherwise customary and has a layer sequence of a lower metallic layer, which is however only optional. This layer is followed by a layer of an industrial ceramic, or of another electrically insulating layer, which in turn is followed by a conductive layer which is structured in itself and thus forms conductor tracks. On these tracks are
- Power semiconductor device 24 is arranged and solder technology to connect. For clarity only, the power electronic substrate 22, the solder layer 26 and the respective power semiconductor device 24 are shown spaced apart.
- These components 22, 24, 26 protract here the second embodiment of the flat article 2, whose first major surface 200 is formed by the underside of the power electronic substrate 22.
- the second, the first opposite major surface 202 of the sheet 2 is formed by the exposed Surfaces of the power electronic substrate 22 and the power semiconductor devices 24.
- This second surface 202 thus has a certain topography, ie a surface contour, which is not reproduced to scale in this representation.
- This planar object 2 also forms a customary component of a power semiconductor module.
- the device according to the invention serves in an analogous manner as in FIG. 1
- FIG. 3 shows an exploded view of a section of a device according to the invention. Shown is an elastic membrane, formed from a
- This membrane 16 has here a centrally located, circular recess 160.
- the heat-conducting body 3 consists here of a first and a second
- the first part body 30 has a heat receiving surface 310, which is designed to be in thermally conductive contact with the first part surface 210 of the first Main surface to be cooled 200 of the sheet-like object 2 and temporarily there an inhomogeneous temperature distribution, as shown schematically as a curve 60 to produce.
- the first part of the body 30 further comprises on its side facing away from the heat receiving surface 310, a first sealing surface 300, which is arranged circumferentially around the edge of the recess 160 of the elastic membrane 16.
- the second part body 32 has a stepped cross section in order to form a recess 36 of the heat conducting body 3. Furthermore, it has a second sealing surface 320, which is formed in alignment with the first sealing surface 300 of the first part body 30. As a result of the connection of the two partial bodies 30, 32, these sealing surfaces 300, 320 enclose the recess 160 of the elastic membrane 16 and thus seal off the cooling device 1, so that no cooling liquid 12 can escape.
- the second part body 32 has a heat discharge surface 330.
- its entire surface in contact with the coolant forms this heat delivery surface 330.
- this may still have a surface contour in the form of cooling fins or cooling fingers to increase the surface and thus make the heat dissipation more efficient.
- FIG. 4 shows a further detail of a device according to the invention.
- the first part body 30 of the heat conducting body 3 according to FIG. 3 is here such
- Heat receiving surface 310 a region 314, which consists of a less good heat conductive material. This material may be exemplified by a copper alloy.
- FIG. 5 shows a time profile of solidification fronts 260 of a solder 26 during the method according to the invention. Shown is the plan view of a power semiconductor device 24 which is to be soldered to a substrate, not shown. The solder 26 associated with this power semiconductor component 24 is separated from the first main surface of the substrate, cf. FIG.
- solder solidifies from the center to the outside, which is represented by the moving of solidification fronts 260 of the solder 26 to be understood as a continuous time course.
- Figures 6 and 7 show three-dimensional representations of a device according to the invention, in Figure 7 with a flat object 2. Shown is a
- Cooling device 1 with a cavity 10 through which cooling liquid 12 flows.
- This hollow space 10 is directed towards the flat article 2, which here is a power semiconductor module with six substrates arranged in series, by means of an elastic membrane 16 with six recesses and heat conducting bodies 3 arranged in these recesses limited.
- These heat-conducting body 3 can move by means of the elastic membrane 16 in the predetermined by the material of the membrane limits, in particular, it can be a tilting or
- a metal plate 18 is additionally arranged here, which forms a stop in this direction of movement.
- the heat conducting body 3 is basically the same as that according to FIG. 3.
- Such a device is preferably part of a soldering system, wherein in a first chamber, a preheating of the sheet-like object, here a base plate of a power semiconductor module arranged thereon but not yet
- solder advantageously in the form of a film
- the solder is transferred from the solid to the liquid phase, in which case the actual process used is not restrictive.
- the cooling chamber the device shown is arranged through which the solder is again transferred specifically into the solid phase and thus the substrates are firmly connected to the base plate.
- Coolant 12 filled under a certain pressure. This will be the
- Heat-conducting body 3 and the elastic membrane 16 pressed against the metal plate 18 and thus limits a volume expansion of the cavity 10.
- Heat receiving surface 310 can apply to the first major surface of the base plate.
- the metal plate 18 is no longer effective as a stop.
- the heat conducting body 3 are aligned with the center of the respective associated substrate.
- Partial surfaces of the first main surface of the base plate are locally cooled because the Wärmleit stresses 3 is in thermal contact with the cooling liquid 12, which has a lower temperature than the solder. There is thus a temperature compensation between the respective partial surface and the cooling liquid via the respective heat-conducting body 3. It is customary practice to flow through the cavity of the cooling device during the process with cooling liquid.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE112017000962.6T DE112017000962A5 (de) | 2016-02-24 | 2017-01-10 | Vorrichtung Verfahren und Anlage zu der inhomogenen Abkühlung eines flächigen Gegenstandes |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102016103213.1A DE102016103213A1 (de) | 2016-02-24 | 2016-02-24 | Vorrichtung, Verfahren und Anlage zur der inhomogenen Abkühlung eines flächigen Gegenstandes |
DE102016103213.1 | 2016-02-24 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2017144040A1 true WO2017144040A1 (de) | 2017-08-31 |
Family
ID=57914615
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE2017/100013 WO2017144040A1 (de) | 2016-02-24 | 2017-01-10 | Vorrichtung verfahren und anlage zu der inhomogenen abkühlung eines flächigen gegenstandes |
Country Status (2)
Country | Link |
---|---|
DE (2) | DE102016103213A1 (de) |
WO (1) | WO2017144040A1 (de) |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62224053A (ja) * | 1986-03-26 | 1987-10-02 | Hitachi Ltd | 冷却装置付半導体装置 |
JPH01245550A (ja) * | 1988-03-28 | 1989-09-29 | Hitachi Ltd | 半導体装置の冷却構造体 |
US5405074A (en) * | 1992-07-29 | 1995-04-11 | Soltec B.V. | Reflow soldering apparatus |
WO2001034334A1 (de) * | 1999-11-08 | 2001-05-17 | Pink Gmbh Vakuumtechnik | Verfahren und vorrichtung zur herstellung einer lotverbindung |
JP2002334958A (ja) * | 2001-05-08 | 2002-11-22 | Aiwa Co Ltd | 放熱装置 |
JP2009136885A (ja) * | 2007-12-04 | 2009-06-25 | Mitsubishi Electric Corp | 金属ベース板冷却装置 |
US20110303403A1 (en) * | 2010-06-11 | 2011-12-15 | International Business Machines Corporation | Flexible Heat Exchanger |
DE102011081606A1 (de) | 2011-08-26 | 2013-02-28 | Infineon Technologies Ag | Kühlvorrichtung und Lötanlage |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0563668A2 (de) * | 1992-04-01 | 1993-10-06 | Siemens Nixdorf Informationssysteme Aktiengesellschaft | Einrichtung zum Kühlen von zu Flachbaugruppen zusammengefassten gehäuselosen integrierten Bausteinen |
DE102014118523B4 (de) * | 2014-12-12 | 2017-11-23 | Semikron Elektronik Gmbh & Co. Kg | Kühleinrichtung und Verfahren zum Abkühlen von flüssigem Lot zur Herstellung einer Lötverbindung |
DE102015106298B4 (de) * | 2015-04-24 | 2017-01-26 | Semikron Elektronik Gmbh & Co. Kg | Vorrichtung, Verfahren und Anlage zur inhomogenen Abkühlung eines flächigen Gegenstandes |
-
2016
- 2016-02-24 DE DE102016103213.1A patent/DE102016103213A1/de not_active Withdrawn
-
2017
- 2017-01-10 WO PCT/DE2017/100013 patent/WO2017144040A1/de active Application Filing
- 2017-01-10 DE DE112017000962.6T patent/DE112017000962A5/de not_active Withdrawn
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62224053A (ja) * | 1986-03-26 | 1987-10-02 | Hitachi Ltd | 冷却装置付半導体装置 |
JPH01245550A (ja) * | 1988-03-28 | 1989-09-29 | Hitachi Ltd | 半導体装置の冷却構造体 |
US5405074A (en) * | 1992-07-29 | 1995-04-11 | Soltec B.V. | Reflow soldering apparatus |
WO2001034334A1 (de) * | 1999-11-08 | 2001-05-17 | Pink Gmbh Vakuumtechnik | Verfahren und vorrichtung zur herstellung einer lotverbindung |
JP2002334958A (ja) * | 2001-05-08 | 2002-11-22 | Aiwa Co Ltd | 放熱装置 |
JP2009136885A (ja) * | 2007-12-04 | 2009-06-25 | Mitsubishi Electric Corp | 金属ベース板冷却装置 |
US20110303403A1 (en) * | 2010-06-11 | 2011-12-15 | International Business Machines Corporation | Flexible Heat Exchanger |
DE102011081606A1 (de) | 2011-08-26 | 2013-02-28 | Infineon Technologies Ag | Kühlvorrichtung und Lötanlage |
Also Published As
Publication number | Publication date |
---|---|
DE112017000962A5 (de) | 2018-12-13 |
DE102016103213A1 (de) | 2017-08-24 |
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