WO2017140140A1 - 基于光子晶体t型波导的横向输出磁控二选一光路开关 - Google Patents

基于光子晶体t型波导的横向输出磁控二选一光路开关 Download PDF

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WO2017140140A1
WO2017140140A1 PCT/CN2016/106644 CN2016106644W WO2017140140A1 WO 2017140140 A1 WO2017140140 A1 WO 2017140140A1 CN 2016106644 W CN2016106644 W CN 2016106644W WO 2017140140 A1 WO2017140140 A1 WO 2017140140A1
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photonic crystal
optical path
shaped waveguide
path switch
port
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PCT/CN2016/106644
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English (en)
French (fr)
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欧阳征标
吴昌义
金鑫
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深圳大学
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/09—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on magneto-optical elements, e.g. exhibiting Faraday effect
    • G02F1/095—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on magneto-optical elements, e.g. exhibiting Faraday effect in an optical waveguide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/1225—Basic optical elements, e.g. light-guiding paths comprising photonic band-gap structures or photonic lattices
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/125—Bends, branchings or intersections
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/0151—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the refractive index
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/32—Photonic crystals

Definitions

  • the invention relates to a magnetic control two-selection optical path gating switch, in particular to a lateral output magnetic control two-selection optical path gating switch based on a photonic crystal T-shaped waveguide.
  • the traditional magnetic control two-selection optical path gating switch uses the principle of geometric optics, so the volume is relatively large and cannot be used in optical path integration.
  • the combination of magneto-optical materials and novel photonic crystals has led to the development of many photonic devices.
  • the most important property is the gyromagnetic non-reciprocity of electromagnetic waves under bias magnetic fields, which makes magnetic photonic crystals not only have optical rotation characteristics, but also have greater Transmission bandwidth and higher propagation efficiency.
  • the optical switch is the most basic component of optical communication and optical computing, and has wide application value.
  • the compact optical switch is the basic unit of the integrated optical circuit chip.
  • the object of the present invention is to overcome the deficiencies in the prior art and provide a photonic crystal magnetron selective optical path gating switch that is efficient and short-range easy to integrate.
  • the invention is based on a lateral output magnetron selective optical path switch of a photonic crystal T-shaped waveguide, comprising a photonic crystal T-shaped waveguide with a TE forbidden band;
  • the optical path switch further comprises an input end 1, two output ends 2, 3 a background silicon dielectric column 4, an isosceles right triangle defect dielectric column 5 and a defect dielectric column 6, the optical path switch further comprising an electromagnet providing a bias magnetic field;
  • the left end of the photonic crystal T-shaped waveguide is an input end 1,
  • the output end 2 and the output end 3 are respectively located at the lower end and the upper end of the photonic crystal T-shaped waveguide, and are arranged in a horizontal line;
  • the defective dielectric column 6 is located at the center intersection of the T-shaped waveguide;
  • the right triangle defect dielectric columns 5 are respectively located at four corners of the intersection of the T-shaped waveguides;
  • the optical switch further includes a wire 8, a polarity controllable current source 9 and an electronic switch 10; the other end of the electromagnet (7) is connected to the other end of the polarity controllable current source (9) via a wire (8); The polarity controllable current source 9 is connected to the electronic switch 10.
  • the photonic crystal is a two-dimensional square lattice structure.
  • the photonic crystal is composed of a high refractive index dielectric material and a low refractive index material; the high refractive index dielectric material is silicon or a medium having a refractive index greater than 2; and the low refractive index medium is air or a medium having a refractive index of less than 1.4.
  • the T-shaped waveguide is a structure in which a middle one horizontal row and a vertical dielectric column are removed in a photonic crystal.
  • the four background dielectric columns at the corners of the T-shaped waveguide respectively delete one corner to form an isosceles right triangle defect dielectric column, and the isosceles right triangle defect dielectric column 5 is a triangular column type.
  • the background silicon dielectric column 4 has a square shape.
  • the square silicon dielectric column is rotated 41 degrees counterclockwise in the z-axis direction of the dielectric column axis.
  • the defect dielectric column 6 is a ferrite square column having a square shape, the magnetic permeability of the ferrite square column is anisotropic, and is controlled by a bias magnetic field, and the bias magnetic field direction is along the iron.
  • the axial direction of the oxygen square column is a ferrite square column having a square shape, the magnetic permeability of the ferrite square column is anisotropic, and is controlled by a bias magnetic field, and the bias magnetic field direction is along the iron.
  • the axial direction of the oxygen square column is a ferrite square column having a square shape, the magnetic permeability of the ferrite square column is anisotropic, and is controlled by a bias magnetic field, and the bias magnetic field direction is along the iron.
  • the axial direction of the oxygen square column is a ferrite square column having a square shape
  • the invention has the following advantages:
  • FIG. 1 is a schematic view showing the structure of a lateral output magnetron selective optical path switch of a photonic crystal T-waveguide according to the present invention.
  • FIG. 2 is a schematic view showing another structure of a lateral output magnetron selective optical path switch of a photonic crystal T-waveguide according to the present invention.
  • FIG. 3 is a structural parameter distribution diagram of a lateral output magnetron two-selection optical path switch of a photonic crystal T-waveguide according to the present invention.
  • FIG. 4 is a switching waveform diagram of a lateral output magnetron selective optical path switch of a photonic crystal T-waveguide of the present invention.
  • Fig. 5(a) is a switch-contrast diagram of the transverse output magnetic control of the photonic crystal T-waveguide of the first embodiment in the forbidden band frequency of the optical path switch.
  • Fig. 5(b) is a diagram showing the switch isolation of the forbidden band frequency of the lateral output magnetron two-selection optical path switch of the photonic crystal T-waveguide of the first embodiment.
  • Fig. 6(a) is a diagram showing the switching contrast of the forbidden band frequency of the lateral output magnetron selective optical path switch of the photonic crystal T-waveguide of the second embodiment.
  • Figure 6 (b) is a transverse output magnetron of the photonic crystal T-waveguide of Embodiment 2; Switch isolation diagram with frequency.
  • Fig. 7(a) is a diagram showing the switching contrast of the forbidden band frequency of the lateral output magnetron selective optical path switch of the photonic crystal T-waveguide of the third embodiment.
  • Fig. 7(b) is a diagram showing the switch isolation of the forbidden band frequency of the lateral output magnetron two-selection optical path switch of the photonic crystal T-waveguide in the third embodiment.
  • Figure 8 is a schematic diagram showing the light field distribution of the lateral output magnetron selective optical path switch of the photonic crystal T-waveguide of the present invention.
  • the schematic diagram of the lateral output magnetron selective optical path switch of the photonic crystal T-waveguide of the present invention includes a photonic crystal T-waveguide with a TE forbidden band.
  • the optical path switch further includes an input terminal 1, two output terminals 2, 3, a background silicon dielectric column 4, an isosceles right triangle shaped defect dielectric column 5, and a defective dielectric column 6; the initial signal light of the device is incident from the left port 1, the port 2 output light wave, port 3 is isolated light wave; the left end of the photonic crystal T-shaped waveguide is the input end 1, and the output ends 2, 3 are respectively located at the lower end and the upper end of the photonic crystal T-shaped waveguide, which is arranged in a horizontal line; the photonic crystal waveguide is connected by port 1 Input TE light, the switch (10) control signal is output from port 2 or port (3) respectively, that is, port 1 is selected to be connected to port 2 and port 3; the background silicon dielectric column 4 is square in shape
  • the isosceles right triangle defect dielectric column 5 is defined by the four background dielectric columns at the corners of the T-shaped waveguide, respectively, to form an isosceles right triangle defect dielectric column, and the isosceles right triangle defect dielectric column 5
  • the triangular column type four isosceles right triangle defect dielectric columns 5 are respectively located at the four corners of the T-shaped waveguide intersection, the optical axis direction is the same as the background dielectric column, and the defective dielectric column 6 is located at the center intersection of the T-shaped waveguide, the defective dielectric column 6 is a ferrite square column, the shape of which is square, the direction of the optical axis is perpendicular to the outer side of the paper; the magnetic permeability of the ferrite square column is anisotropic, and is controlled by the bias magnetic field, and the direction of the bias magnetic field is along The axial direction of the ferrite square column.
  • the transverse output of the waveguide is a schematic diagram of the structure of the optical switch (including the bias circuit and the bias coil).
  • the optical path switch includes an electromagnet 7 (electromagnet coil) for providing a bias magnetic field, and the other end of the electromagnet is The other end of the polarity controllable current source 9 is connected, and the optical path is further provided with a wire 8, a polarity controllable current source 9 and an electronic switch 10.
  • One end of the electromagnet 7 passes through the wire 8 and one end of the polarity controllable current source 9.
  • the optical path switch of the present invention adopts a Cartesian Cartesian coordinate system as shown in FIG. 1 and FIG. 3: the positive direction of the x-axis is horizontal to the right; the positive direction of the y-axis is The paper surface is vertically upward; the positive direction of the z-axis is perpendicular to the paper surface.
  • the photonic crystal of the invention has a square lattice, a lattice constant of a, a side length of the dielectric column of 0.3a, and a plane wave expansion method when the photonic crystal square silicon dielectric column rotates 41 degrees counterclockwise in the axial direction of the reference medium column (z axis).
  • the TE forbidden band structure in the photonic crystal is obtained.
  • the photonic TE forbidden band is 0.3150 to 0.4548 ( ⁇ a/2 ⁇ c), and the light wave of any frequency between them will be confined in the waveguide.
  • the square lattice dielectric column refers to the axis direction of the dielectric column (z axis) After rotating 41 degrees counterclockwise, a larger and wider forbidden band range was obtained.
  • the silicon dielectric waveguide used in the present invention needs to delete one row and one column of dielectric pillars to form a waveguide waveguide.
  • the waveguide plane is perpendicular to the axis of the dielectric column in the photonic crystal.
  • ferrite is a material of magnetic anisotropy, and the magnetic anisotropy of ferrite is induced by an applied DC bias magnetic field.
  • This magnetic field causes the magnetic dipoles in the ferrite to align in the same direction, resulting in a resultant magnetic dipole moment and precession of the magnetic dipole at a frequency controlled by the biasing magnetic field strength.
  • the bias magnetic field strength By adjusting the bias magnetic field strength, the interaction with the external microwave signal can be controlled, thereby realizing the lateral output magnetron selective optical path switch of the photonic crystal T-shaped waveguide.
  • the permeability tensor of ferrite exhibits asymmetry, in which the ferrite tensor permeability [ ⁇ ] is:
  • ⁇ 0 is the magnetic permeability in vacuum
  • ⁇ is the gyromagnetic ratio
  • H 0 is the applied magnetic field
  • M S is the saturation magnetization
  • Factor, parameters ⁇ and k determine different ferrite materials, materials with this form of magnetic permeability tensor are called gyromagnetic, assuming that the direction of the bias is reversed, H 0 and M S will change the sign, So the direction of rotation will be reversed.
  • the bias magnetic field is generated by a bias electromagnet, and a bias current is applied to the bias electromagnet, and the bias current is Control signal; the bias current is positive (negative), one optical path is strobed (off), and the other optical path is off (strobe).
  • the magnetic control two-selection optical path strobe switch is generally realized by combining a photonic band gap of a photonic crystal and a photonic local characteristic with a gyromagnetic characteristic of a magneto-optical medium under a bias magnetic field, using a Faraday rotation effect, The angle required to rotate the light is output by any one of the two ports, so that the intensity of the light output from the port changes, thereby realizing the function of the optical switch.
  • the incident signal port is located at the position of the left port 1 shown in FIG. 1, and the port 1 is a TE optical signal.
  • the optical signal propagates in the waveguide formed by the dielectric column array of the silicon dielectric column 4, after the TE optical signal reaches the defect position of the defective dielectric column 6, the TE optical signal will all pass, and finally the TE optical signal will be output at the output port 2 position; The TE optical signal has almost no output at the output port 3 position.
  • the insertion loss in the waveguide is small.
  • port 2 is in the on state and port 3 is in the off state.
  • the incident signal port is located at the position of the left port 1 shown in FIG. 1, which is a TE optical signal.
  • the optical signal propagates in the waveguide formed by the dielectric column array of the silicon dielectric column 4, after the TE optical signal reaches the defect position of the defective dielectric column 6, the TE optical signal will all pass, and finally the TE optical signal will be output at the output port 3 position; The TE optical signal has almost no output at the output port 2 position.
  • the insertion loss in the waveguide is small.
  • port 3 is in the on state and port 2 is in the off state.
  • the selection of the lattice constant and the operating wavelength can be determined in the following manner.
  • the ⁇ value satisfying the wavelength range can be obtained by changing the value of the lattice constant a without changing the dispersion or the dispersion of the material.
  • the operating wavelength can be adjusted by the lattice constant between the dielectric columns without regard to dispersion or negligible dispersion.
  • Switch rise time and fall time (the switch rise time and fall time of this structure are determined by the change speed of the magnetic field, so that a fast switching process can be obtained, generally only 1us switching time is required.)
  • the function of the two-choice optical path gating switch of different wavelengths can be realized by changing the lattice constant by a proportional change without considering the dispersion or the variation of the material dispersion.
  • the switch contrast map in the forbidden band light wave frequency range is obtained by simulation, and the switch isolation map in the forbidden band light wave frequency range is described with reference to FIG. 5(b), and the structure has high contrast and high.
  • the magnetic control of the isolation selects an optical path strobe switch, thereby realizing the optical switching function.
  • the function of the two-choice optical path gating switch of different wavelengths can be realized by changing the lattice constant by a proportional change without considering the dispersion or the variation of the material dispersion.
  • the switch contrast in the forbidden band light wave frequency range is obtained by simulation; referring to FIG. 6(b), the switch isolation in the forbidden band light wave frequency range has high contrast and high isolation.
  • the magnetic control selects an optical path strobe switch to realize the optical switch function.
  • the function of the two-choice optical path gating switch of different wavelengths can be realized by changing the lattice constant by a proportional change without considering the dispersion or the variation of the material dispersion.
  • the switch contrast in the band gap frequency range is obtained by simulation; referring to Fig. 7(b), the switch isolation map in the band gap frequency range.
  • the light field simulation map calculated by the finite element software COMSOL is shown in FIG. It can be seen that the TE light is efficiently propagated to the port 2 and the port 3 respectively.
  • the structure has a high-contrast, high-isolation magnetically controlled two-choice optical path strobe switch, thereby realizing the optical switching function.

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Abstract

一种基于光子晶体T型波导的横向输出磁控二选一光路开关，包括一个具有TE禁带的光子晶体T型波导，其包括背景硅介质柱(4)、等腰直角三角形缺陷介质柱(5)和缺陷介质柱(6)。光路开关还包括一个提供偏置磁场的电磁铁(7)；光子晶体T型波导的左端为输入端(1)，输出端(2、3)分别位于光子晶体T型波导的下端、上端，呈一条横线布局。缺陷介质柱(6)位于T型波导中心交叉处。光子晶体波导由端口(1)输入TE光，再从端口(2)或端口(3)输出调幅光。本发明结构体积小，便于集成，可以实现二选一光路高效选通开关的功能。

Description

基于光子晶体T型波导的横向输出磁控二选一光路开关 技术领域
本发明涉及磁控二选一光路选通开关，尤其涉及一种基于光子晶体T型波导的横向输出磁控二选一光路选通开关。
背景技术
传统的磁控二选一光路选通开关应用的是几何光学原理，因此体积都比较大，无法用于光路集成中。磁光材料与新型光子晶体的结合导致提出了许多光子器件，其最主要的性质是电磁波在偏置磁场下表现的旋磁非互易性，使磁性光子晶体不仅具有旋光特性，还有着更大的传输带宽和更高的传播效率。以光子晶体为基础的微小的器件，例如磁控二选一光路选通开关，其光子晶体波导通过引入线缺陷来构建。光开关是光通信和光学计算的最基本部件，具有广泛应用价值，紧凑型光开关是集成光路芯片的基本单元。
发明内容
本发明的目的是克服现有技术中的不足，提供一种高效短程便于集成的光子晶体磁控二选一光路选通开关。
本发明的目的通过下述技术方案予以实现。
本发明基于光子晶体T型波导的横向输出磁控二选一光路开关，包括一个具有TE禁带的光子晶体T型波导；所述光路开关还包括一个输入端1、两个输出端2、3、背景硅介质柱4、等腰直角三角形缺陷介质柱5和缺陷介质柱6，所述光路开关还包括一个提供偏置磁场的电磁铁；所述光子晶体T型波导的左端为输入端1，所述输出端2和输出端3分别位于光子晶体T型波导的下端和上端，呈一条横线布局；所述缺陷介质柱6位于T型波导中心交叉处；所述4个等腰 直角三角形缺陷介质柱5分别位于T型波导交叉的四个拐角处；所述光子晶体波导由端口1输入TE光，所述开关10控制信号再分别从端口2或端口3输出，即端口1选择与端口2和端口3相连接。
所述光开关进一步包括导线8、极性可控电流源9和电子开关10；电磁铁(7)的另一端通过导线(8)与极性可控电流源(9)的另一端相连接；所述极性可控电流源9与电子开关10连接。
所述光子晶体为二维正方晶格结构。
所述光子晶体由高折射率介质材料和低折射率材料组成；所述高折射率介质材料为硅或折射率大于2的介质；所述低折射率介质为空气或折射率小于1.4的介质。
所述T型波导为光子晶体中移除中间一横排和一竖排介质柱后的结构。
所述T型波导交叉拐角处的4个背景介质柱分别删除一个角以形成等腰直角三角形缺陷介质柱，该等腰直角三角形缺陷介质柱5为三角柱型。
所述背景硅介质柱4的形状为正方形。
所述正方形硅介质柱以介质柱轴线z轴方向逆时针旋转41度。
所述缺陷介质柱6为铁氧体方柱，其形状为正方形，所述的铁氧体方柱的磁导率为各向异性，且受偏置磁场的控制，偏置磁场方向沿着铁氧体方柱的轴线方向。
本发明与现有技术相比具有以下的优点：
(1)结构体积小，开关时间响应快，光传输效率高，适合大规模光路集成；
(2)可以短程高效地实现TE光信号磁控二选一光路选通开关，便于集成而且高效，具有极大的实用价值。
(3)应用光子晶体可等比例缩放的特性，通过等比例改变晶格常数的方法， 可以实现不同波长磁控二选一光路选通开关的功能。
(4)高对比度、高隔离度，同时还具有较宽的工作波长范围，可以允许有一定频谱宽度的脉冲，或高斯光，或不同波长的光工作，或多个波长的光同时工作，具有实用意义。
附图说明
图1是本发明光子晶体T型波导的横向输出磁控二选一光路开关的一种结构示意图。
图中：输入端1 输出端2 输出端3 背景硅介质柱4 等腰直角三角形 缺陷介质柱5 缺陷介质柱6
图2是本发明光子晶体T型波导的横向输出磁控二选一光路开关的另一种结构示意图。
图中:电磁铁7 导线8 极性可控电流源9 电子开关10
图3是本发明光子晶体T型波导的横向输出磁控二选一光路开关结构参数分布图。
图4是本发明光子晶体T型波导的横向输出磁控二选一光路开关的开关波形图。
图5(a)是实施例1中光子晶体T型波导的横向输出磁控二选一光路开关禁带频率的开关对比度图。
图5(b)是实施例1中光子晶体T型波导的横向输出磁控二选一光路开关禁带频率的开关隔离度图。
图6(a)是实施例2中光子晶体T型波导的横向输出磁控二选一光路开关禁带频率的开关对比度图。
图6(b)是实施例2中光子晶体T型波导的横向输出磁控二选一光路开关禁 带频率的开关隔离度图。
图7(a)是实施例3中光子晶体T型波导的横向输出磁控二选一光路开关禁带频率的开关对比度图。
图7(b)是实施例3中光子晶体T型波导的横向输出磁控二选一光路开关禁带频率的开关隔离度图。
图8是本发明光子晶体T型波导的横向输出磁控二选一光路开关的光场分布示意图。
具体实施方式
如图1所示，本发明光子晶体T型波导的横向输出磁控二选一光路开关的结构示意图(删除偏置电路和偏置线圈)，包括一个具有TE禁带的光子晶体T型波导，光路开关还包括一个输入端1、两个输出端2、3、背景硅介质柱4、等腰直角三角形缺陷介质柱5和缺陷介质柱6；本器件初始信号光从左方端口1入射，端口2输出光波，端口3隔离光波；光子晶体T型波导的左端为输入端1，输出端2、3分别位于光子晶体T型波导的下端、上端，呈一条横线布局；光子晶体波导由端口1输入TE光，开关(10)控制信号再分别从端口2或端口(3)输出，即端口1选择与端口2和端口3相连接；背景硅介质柱4形状为正方形，光轴方向垂直纸面向外，等腰直角三角形缺陷介质柱5为，T型波导交叉拐角处的4个背景介质柱分别删除一个角以形成等腰直角三角形缺陷介质柱，该等腰直角三角形缺陷介质柱5为三角柱型，4个等腰直角三角形缺陷介质柱5分别位于T型波导交叉的四个拐角处，光轴方向与背景介质柱相同，缺陷介质柱6位于T型波导中心交叉处，缺陷介质柱6为铁氧体方柱，其形状为正方形，光轴方向垂直纸面向外；该铁氧体方柱的磁导率为各向异性，且受偏置磁场的控制，偏置磁场方向沿着铁氧体方柱的轴线方向。如图2所示，本发明光子晶体T型 波导的横向输出磁控二选一光路开关的结构示意图(含有偏置电路和偏置线圈)，光路开关包括一个提供偏置磁场的电磁铁7(电磁铁线圈)，该电磁铁的另一端与极性可控电流源9的另一端相连接，光路开还包括导线8、极性可控电流源9和电子开关10，电磁铁7的一端通过导线8与极性可控电流源9的一端相连接；极性可控电流源9与电子开关10连接；本发明光路开关如图1和图3所示采用笛卡尔直角坐标系：x轴正方向为水平向右；y轴正方向为在纸面内竖直向上；z轴正方向为垂直于纸面向外。
如图3所示，本器件的相关参数为：
Figure PCTCN2016106644-appb-000001
本发明光子晶体为正方晶格，晶格常数为a，介质柱边长为0.3a，在光子晶体正方形硅介质柱参考介质柱轴线方向(z轴)逆时针旋转41度时，采用平面波展开法得到光子晶体中TE禁带结构，光子TE禁带为0.3150至0.4548(ωa/2πc)，其中间的任何频率的光波将被限制在波导中，正方晶格介质柱参考介质柱轴线方向(z轴)逆时针旋转41度后，获得了更大更宽的禁带范围。
本发明所使用硅介质波导需要删除一行和一列介质柱而形成导波波导。波导平面垂直于光子晶体中的介质柱的轴线。通过在上述光子晶体T型波导中心交叉处引入一个铁氧体方柱(方形缺陷介质柱6)，其边长为0.28a，4个等腰直 角三角形缺陷介质柱5斜边面分别到铁氧体柱(方形缺陷介质柱6)轴线的距离为1.2997a。铁氧体方柱的光轴与背景介质柱的光轴方向一致。
本发明的原理介绍主要针对磁光介质加以解释。铁氧体是一种磁各向异性的材料，铁氧体的磁各向异性是由外加直流偏置磁场所诱导的。该磁场使铁氧体中的磁偶极子循同一方向排列，从而产生合成的磁偶极距，并使磁偶极子在由偏置磁场强度所控制的频率下做进动。通过调整偏置磁场强度可控制与外加微波信号的相互作用，从而实现光子晶体T型波导的横向输出磁控二选一光路开关。在偏置磁场的作用下，铁氧体的磁导率张量表现为非对称性，其中铁氧体张量磁导率[μ]为：
Figure PCTCN2016106644-appb-000002
磁导率张量的矩阵元由以下式子给出：
ω0＝μ0γH0   (2)
ωm＝μ0γMs   (3)
ω＝2πf   (4)
Figure PCTCN2016106644-appb-000003
Figure PCTCN2016106644-appb-000004
其中，μ0为真空中的磁导率，γ为旋磁比，H0为外加磁场，MS为饱和磁化强度，为工作频率，p＝k/μ为归一化磁化频率，也叫分离因子，参数μ和k决定不同铁氧体材料，具有这种形式的磁导率张量的材料称为旋磁性的，假定偏置的方向是相反的，则H0和MS将改变符号，所以旋转方向也会相反。
偏置磁场由偏置电磁铁产生，偏置电磁铁中加载偏置电流，该偏置电流为 控制信号；偏置电流为正(负)值，一个光路处于选通(关闭)，另一个光路处于关闭(选通)。
通过调节偏置磁场H的大小来确定符合H＝H0时，光从端口3输出，H＝-H0时，光从端口2输出。从而实现磁控二选一光路选通开关。
磁控二选一光路选通开关，一般通过以下方法实现：在偏置磁场下，将光子晶体的光子禁带和光子局域特性与磁光介质的旋磁特性相结合，利用法拉第旋转效应，使光旋转所需要的角度，由两个端口中的任意一个端口输出，使端口输出的光的强度会发生变化，从而实现了光开关的作用。
通过数值扫描计算得到，d2＝0.3a，d3＝0.2817a，d5＝1.2997a，归一化光波频率f＝0.4121，相对介电常数εr＝12.9，光信号从端口2输出最大值，且从端口3输出最小。当偏置磁场方向改变时，H0和MS的符号改变，使光信号的环形方向应改变。因此，光信号从端口3输出最大值，且从端口2输出最小。
当在硅介质柱阵列波导中引入上述缺陷后，入射信号端口位于图1所示左方端口1的位置，该端口1处为TE光信号。光信号在以硅介质柱4的介质柱阵列形成的波导中传播，TE光信号到达缺陷介质柱6的缺陷位置后，TE光信号将全部通过，最后TE光信号将在输出端口2位置输出；TE光信号在输出端口3位置几乎没有输出。同时，在波导中插入损失很小。此时端口2为导通状态，端口3处于关闭状态。当偏置磁场方向改变时，入射信号端口位于图1所示左方端口1的位置，该端口1处为TE光信号。光信号在以硅介质柱4的介质柱阵列形成的波导中传播，TE光信号到达缺陷介质柱6的缺陷位置后，TE光信号将全部通过，最后TE光信号将在输出端口3位置输出；TE光信号在输出端口2位置几乎没有输出。同时，在波导中插入损失很小。此时端口3为导通状态，端口2处于关闭状态。
对于晶格常数和工作波长的选取，可以采用以下方式确定。通过公式
Figure PCTCN2016106644-appb-000005
其中以本发明中正方晶格硅结构的的归一化禁带频率范围
fnorm＝0.3150～0.4548   (8)
计算出相应的禁带波长范围为：
λ＝2.1987a～3.1746a   (9)
由此可见在不考虑色散或材质色散变化很小的情况下，可以通过改变晶格常数a的值得到与其等比例的满足波长范围的λ值。工作波长可以在不考虑色散或色散可忽略的情况下通过介质柱间晶格常数来调节。
如图4所示，通过控制电压，得到光功率输出波形，其中0～t1时段磁场为-H，从端口2输出；t>t1时段磁场为H，从端口3输出。开关上升时间Tr和下降时间Tf取决于磁场的变化速度。
光开关的参数：
(1)开关上升时间、下降时间(该结构的开关上升时间、下降时间决定于磁场的变化速度，这样可以获得快速开关过程，一般仅需1us的开关时间。)参照图4。
(2)开关对比度定义为：
端口2导通：10log(导通时的输出功率/断开时的输出功率)＝10log(P开/P关)
端口3导通：10log(导通时的输出功率/断开时的输出功率)＝10log(P开/P关)，参照图5(a)。
(3)隔离度定义为：隔离度＝10log(输入功率/隔离端输出功率)＝10log(P入/P隔)，参照图5(b)。
参照图5(a)可知，在归一化光波频率ωa/2πc＝0.4121时，其开关对比度可达到48dB。
通过图5(b)可知，端口2、3隔离度可达到48dB，其性能相比其它光开关具有明显优势。
实施例1
本实施例中，在不考虑色散或材质色散变化很小的情况下，通过等比例改变晶格常数的方法，可以实现不同波长磁控二选一光路选通开关的功能。令参数a＝6.1772×10-3[m]，d2＝0.3a，d3＝0.2817a，d5＝1.2997a，μ＝9.6125，p＝0.7792，归一化光波频率ωa/2πc＝0.4121，其他参数不变，使其对应到20GHz的光波。参照图5(a)，通过仿真计算得到在禁带光波频率范围内的开关对比度图，参照图5(b)，在禁带光波频率范围内的开关隔离度图，该结构具有高对比度、高隔离度的磁控二选一光路选通开关，从而实现了光开关功能。
实施例2
本实施例中，在不考虑色散或材质色散变化很小的情况下，通过等比例改变晶格常数的方法，可以实现不同波长磁控二选一光路选通开关的功能。令参数a＝4.1181×10-3[m]，d2＝0.3a，d3＝0.2817a，d5＝1.2997a，μ＝9.6125，p＝0.7792，归一化光波频率ωa/2πc＝0.4121，其他参数不变，使其对应到30GHz的光波。参照图6(a)，通过仿真计算得到在禁带光波频率范围内的开关对比度；参照图6(b)，在禁带光波频率范围内的开关隔离度，该结构具有高对比度、高隔离度的磁控二选一光路选通开关，从而实现了光开关功能。
实施例3
本实施例中，在不考虑色散或材质色散变化很小的情况下，通过等比例改变晶格常数的方法，可以实现不同波长磁控二选一光路选通开关的功能。令参 数a＝3.0886×10-3[m]，d2＝0.3a，d3＝0.2817a，d5＝1.2997a，μ＝9.6125，p＝0.7792，归一化光波频率ωa/2πc＝0.4121，其他参数不变，使其对应到40GHz的光波。参照图7(a)，通过仿真计算得到在禁带频率范围内的开关对比度；参照图7(b)，在禁带频率范围内的开关隔离度图。通过图7(a)、图7(b)可知，在归一化光波频率ωa/2πc＝0.4121时，由有限元软件COMSOL进行计算，得到的光场模拟图，如图8所示。由此可知，TE光分别高效地传播至端口2和端口3，该结构具有高对比度、高隔离度的磁控二选一光路选通开关，从而实现了光开关功能。
以上所述本发明在具体实施方式及应用范围均有改进之处，不应当理解为对本发明限制。

Claims (9)

  1. 一种基于光子晶体T型波导的横向输出磁控二选一光路开关，其特征在于，包括一个具有TE禁带的光子晶体T型波导；所述光路开关还包括一个输入端(1)、两个输出端(2、3)、背景硅介质柱(4)、等腰直角三角形缺陷介质柱(5)和缺陷介质柱(6)，所述光路开关还包括一个提供偏置磁场的电磁铁(7)；所述光子晶体T型波导的左端为输入端(1)，所述输出端(2、3)分别位于光子晶体T型波导的下端、上端，呈一条横线布局；所述缺陷介质柱(6)位于T型波导中心交叉处；所述4个等腰直角三角形缺陷介质柱(5)分别位于T型波导交叉的四个拐角处；所述光子晶体波导由端口(1)输入TE光，输出信号从端口(2)或端口(3)输出，即端口(1)选择与端口(2)和端口(3)相连接。
  2. 按照权利要求1所述的基于光子晶体T型波导的横向输出磁控二选一光路开关，其特征在于：所述光路开关进一步包括导线(8)、极性可控电流源(9)和电子开关(10)；电磁铁(7)的另一端通过导线(8)与极性可控电流源(9)的另一端相连接；所述极性可控电流源(9)与电子开关(10)连接。
  3. 按照权利要求1所述的的基于光子晶体T型波导的横向输出磁控二选一光路开关，其特征在于：所述光子晶体为二维正方晶格结构。
  4. 按照权利要求1所述的基于光子晶体T型波导的横向输出磁控二选一光路开关，其特征在于：所述光子晶体由高折射率介质材料和低折射率材料组成；所述高折射率介质材料为硅或折射率大于2的介质；所述低折射率介质为空气或折射率小于1.4的介质。
  5. 按照权利要求1所述的基于光子晶体T型波导的横向输出磁控二选一光路开关，其特征在于：所述T型波导为光子晶体中移除中间一横排和一竖排介质柱后的结构。
  6. 按照权利要求1所述的基于光子晶体T型波导的横向输出磁控二选一光路开关，其特征在于：所述T型波导交叉拐角处的4个背景介质柱分别删除一个角以形成等腰直角三角形缺陷介质柱，该等腰直角三角形缺陷介质柱(5)为三角柱型。
  7. 按照权利要求1所述的基于光子晶体T型波导的横向输出磁控二选一光路开关，其特征在于：所述背景硅介质柱(4)的形状为正方形。
  8. 按照权利要求7所述的基于光子晶体T型波导的横向输出磁控二选一光路开关，其特征在于：所述正方形硅介质柱以介质柱轴线z轴方向逆时针旋转41度。
  9. 按照权利要求1所述的基于光子晶体T型波导的横向输出磁控二选一光路开关，其特征在于：所述缺陷介质柱(6)为铁氧体方柱，其形状为正方形，所述的铁氧体方柱的磁导率为各向异性，且受偏置磁场的控制，偏置磁场方向沿着铁氧体方柱的轴线方向。
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