WO2017133622A1 - 高导通高电压太阳能光电玻璃板 - Google Patents

高导通高电压太阳能光电玻璃板 Download PDF

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Publication number
WO2017133622A1
WO2017133622A1 PCT/CN2017/072632 CN2017072632W WO2017133622A1 WO 2017133622 A1 WO2017133622 A1 WO 2017133622A1 CN 2017072632 W CN2017072632 W CN 2017072632W WO 2017133622 A1 WO2017133622 A1 WO 2017133622A1
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Prior art keywords
glass
conductive
glass substrate
powder
glass substrates
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PCT/CN2017/072632
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English (en)
French (fr)
Inventor
刘联家
盖庆亮
尤晓江
Original Assignee
武汉华尚绿能科技股份有限公司
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Application filed by 武汉华尚绿能科技股份有限公司 filed Critical 武汉华尚绿能科技股份有限公司
Priority to EP17746942.6A priority Critical patent/EP3413357A4/en
Priority to US16/073,477 priority patent/US20190035961A1/en
Publication of WO2017133622A1 publication Critical patent/WO2017133622A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H01L31/0488—Double glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
    • B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
    • B32B17/10009—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets
    • B32B17/10036—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets comprising two outer glass sheets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H01L31/049—Protective back sheets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0512—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/24—Reinforcing the conductive pattern
    • H05K3/245—Reinforcing conductive patterns made by printing techniques or by other techniques for applying conductive pastes, inks or powders; Reinforcing other conductive patterns by such techniques
    • H05K3/247—Finish coating of conductors by using conductive pastes, inks or powders
    • H05K3/249—Finish coating of conductors by using conductive pastes, inks or powders comprising carbon particles as main constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/12—Photovoltaic modules
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092—Dispersed materials, e.g. conductive pastes or inks
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0104—Properties and characteristics in general
    • H05K2201/0108—Transparent
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/032—Materials
    • H05K2201/0323—Carbon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B10/00—Integration of renewable energy sources in buildings
    • Y02B10/10—Photovoltaic [PV]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to a high-conduction high-voltage solar photovoltaic glass plate, belonging to the field of electronic devices.
  • Conventional solar photovoltaic glass firstly forms electrodes on the solar wafer.
  • the positive and negative electrodes can be located on the same side of the solar wafer, or on the front and back sides of the solar wafer.
  • the electrode solar photovoltaic wafer used in conventional solar photovoltaic glass has the same electrode. surface. Since the solar wafer is crystalline silicon, it is very thin and brittle itself. It is necessary to use a bump welding process to carry the solar wafer with electrodes through a set of copper strips on a pressure-bearing substrate with an electronic circuit. Finally, the solar energy is laminated by a lamination process.
  • the battery module is mounted on a glass panel, and the glass panel mainly serves to isolate and protect.
  • solar photovoltaic glass needs to withstand large currents and high voltage, it needs to have very strong electrical conductivity.
  • this traditional solar photovoltaic glass has a limited conductivity of the bottom plate of its own electronic circuit, resulting in the entire solar photovoltaic glass plate. The conduction rate is very limited.
  • the soldering process makes the interconnection between the circuits very strong, only one side is covered with glass, and the solar wafer assembly is pressed against the glass.
  • the solar photovoltaic glass plate is broken or the line has problems, it is very It is easy to cause short circuit, there is a big safety hazard, it is difficult to pass the 3C safety certification, and the welding machine is expensive and inefficient.
  • conventional solar photovoltaic panels are opaque and have limited application.
  • the present invention provides a high-conduction high-voltage solar photovoltaic glass plate, which has a light transmittance of more than 90%, has superconducting capability, and has a conductive impedance of less than 5 ⁇ 10 -8 ⁇ .
  • the high-conductivity transparent glass-based circuit board has no dielectric bonding, so that the circuit layer has good thermal conductivity in high-power applications, and the circuit layer is tightly fused with the glass plate molecules, and is not easily peeled off after soldering the solar wafer, and the whole is highly conductive and transparent. And it can be used in the case of high power and high voltage.
  • the technical solution adopted by the present invention to solve the technical problem thereof is to provide a high conduction high voltage too
  • the solar photovoltaic glass plate comprises a glass substrate, and the glass substrate has two surfaces.
  • the surface of the glass substrate is provided with a conductive material which is melted on the surface of the glass substrate after baking, heating and cooling by the conductive paste printed on the air surface of the glass substrate.
  • a conductive layer is a graphene layer, or is a graphene layer of a surface layer and a metal layer of a bottom layer melted with the glass substrate, and a contact surface between the graphene layer and the metal layer is mutually melted; between the two glass substrates a solar wafer with electrodes on both sides is sandwiched, and two electrodes of the solar wafer are respectively connected to the pads of the conductive lines of the two glass substrates through a tin layer, and the edges of the two glass substrates are provided with a sealant; A tempered glass substrate; the portion of the conductive wiring surface except the pad for soldering the solar wafer is covered with a PCB organic solder resist.
  • the surface of the glass substrate is flush with the upper surface of the conductive line.
  • the gap between the two glass substrates is less than 2 mm.
  • the conductive paste is composed of a conductive powder having a mass ratio of 65 to 75:3:5 to 10:10 to 20:1 to 3, a low-temperature glass powder, ethyl cellulose, terpineol, and dibutyl maleate.
  • the composition of the ester, wherein the conductive powder is graphene powder or a mixture of metal powder and graphene powder; if the conductive powder is a mixture of metal powder and graphene powder, the graphene powder accounts for 2% to 5% by mass of the conductive paste. .
  • the surface of the glass substrate is provided with a conductive paste printed on the air surface of the glass substrate, baked at a temperature of 120 to 150 ° C for 100 to 200 seconds, and then placed at a temperature of 550 to 600 ° C for 300 to 360 seconds. Then, it is placed in a temperature environment of 710 to 730 ° C for 120 to 220 seconds, and finally cooled and then fused with the surface of the glass substrate.
  • the glass substrate of the present invention has a molten relationship with the conductive line, is closely connected, has superconducting ability, and has a conductive impedance of less than 5 ⁇ 10 -8 ⁇ , and the complete circuit composed of the solar wafer and the conductive line can operate efficiently;
  • the glass substrate of the present invention is in a molten relationship with the conductive line, and has no medium bonding, so that the circuit layer has good thermal conductivity in high-power applications, and the circuit layer and the glass substrate molecules are tightly fused, and the solar wafer can be attached.
  • the film and the solar wafer are not easily peeled off;
  • the graphene content in the conductive paste of the present invention is small, only the mass percentage of the conductive paste is 2 ⁇ to 5%, but the molecular arrangement is extremely dense, light in weight, and can float on the surface of the metal molecule due to its It is more wear-resistant than metal and has high conductivity. Therefore, the conductive line finally formed can still ensure its high conductivity; the graphene is almost completely transparent, so the glass-based circuit board can ensure high transmittance and light transmittance. More than 90%;
  • the surface of the glass substrate of the present invention is flush with the upper surface of the conductive line, the surface of the entire highly conductive transparent glass-based circuit board is smooth, and the conductive line is not easily damaged;
  • the conductive circuit of the present invention can be twice covered with a PCB organic solder resist paint, which will be placed on the conductive line
  • the pads of the soldered solar chip are left out to protect the circuit layer, prevent oxidation of the surface of the conductive line, and maintain superconductivity;
  • the conductive circuit of the present invention is completely melted on the glass substrate. If the high-conduction high-voltage solar photovoltaic glass plate is broken, the entire circuit is immediately disconnected, and the glass itself is non-conductive, and no voltage is formed again. It is suitable for high-voltage and high-power scenes. It only needs to convert DC to AC to directly output to high-voltage power grid. Traditional solar photovoltaic glass panels are not easy to pass the safety regulations, and can only be used for low voltage. The grid is connected, and the low voltage needs to be converted into high voltage alternating current;
  • the solar wafer Since the solar wafer is soldered to the high transmittance glass-based circuit board by reflow soldering technology, the low-temperature solder paste is melted to form a tin layer, and the solar wafer can be electrically connected through the tin layer and the conductive line, by designing the solar wafer and conducting The layout of the circuit, such as reducing the area of the solar wafer, and arranging the solar wafers sparsely, the finally obtained high-conduction high-voltage solar photovoltaic glass plate also has high light transmittance, and can be applied to agricultural greenhouses and the like, requiring large-area light transmission. The use of the scene is more widely used than traditional solar photovoltaic glass panels.
  • FIG. 1 is a schematic view showing the structure of a high-conduction high-voltage solar photovoltaic glass plate of the present invention.
  • Fig. 2 is a cross-sectional view taken along line AA of Fig. 1;
  • the present invention provides a high-conduction high-voltage solar photovoltaic glass plate, comprising a glass substrate 1 having two surfaces, and a surface of the glass substrate is provided with an air surface printed on the glass substrate.
  • the conductive paste 2 is fused to the surface of the glass substrate after baking, heating and cooling, and the conductive line is a graphene layer, or a graphene layer 5 from the surface layer and a metal layer 6 fused to the glass substrate at the bottom layer.
  • the contact surfaces between the graphene layer and the metal layer are mutually melted; between the two glass substrates, a solar wafer 7 having electrodes on both sides is sandwiched, and the two electrodes of the solar wafer pass through the tin layer 4 and the two glass substrates respectively.
  • the pads of the conductive lines are connected, and the edges of the two glass substrates are provided with a sealant 8.
  • the surface of the glass substrate is flush with the upper surface of the conductive line.
  • the gap between the two glass substrates is less than 2 mm.
  • the glass substrate is a tempered glass substrate.
  • the conductive paste is made of a conductive powder having a mass ratio of 65 to 75:3:5 to 10:10 to 20:1 to 3, which is low.
  • the mixture of graphene powder accounts for 2% to 5% by mass of the conductive paste.
  • the surface of the glass substrate is provided with a conductive paste printed on the air surface of the glass substrate, baked at a temperature of 120 to 150 ° C for 100 to 200 seconds, and then placed at a temperature of 550 to 600 ° C for 300 to 360 seconds. Then, it is placed in a temperature environment of 710 to 730 ° C for 120 to 220 seconds, and finally cooled and then fused with the surface of the glass substrate.
  • the manufacturing process of the high-conduction high-voltage solar photovoltaic glass plate of the invention is as follows:
  • a highly conductive transparent glass-based circuit board is produced by the following process:
  • the conductive paste is made of a conductive powder having a mass ratio of 65 to 75:3:5 to 10:10 to 20:1 to 3, low-temperature glass powder, and B.
  • Base cellulose, terpineol and dibutyl maleate wherein the conductive powder is graphene powder or a mixture of metal powder and graphene powder; if the conductive powder is a mixture of metal powder and graphene powder, graphite
  • the olefin powder accounts for 2% to 5% by mass of the conductive paste;
  • the positive and negative electrodes of the solar wafer with electrodes are respectively located on the front and back sides of the solar wafer; sandwiching the solar wafer between two high-conductivity transparent glass-based circuit boards to make solar energy
  • the positive electrode of the wafer is in contact with a high-conductivity transparent glass and a low-temperature solder paste on the circuit board
  • the negative electrode of the solar wafer is in contact with another high-conductivity transparent glass and a low-temperature solder paste on the circuit board;
  • the conductive circuit of the invention is completely melted on the glass substrate. If the high-conduction high-voltage solar photovoltaic glass plate is broken, the whole circuit is immediately disconnected, and the glass itself is non-conductive, no voltage is formed, and the safety can be adopted. High-voltage and high-power scenes can be directly output to high-voltage power grids by converting DC to AC; traditional solar photovoltaic glass panels are not easy to pass through safety regulations, and can only be used at low voltages.
  • the low voltage needs to be converted into high voltage alternating current; since the solar wafer is soldered to the high transmittance glass-based circuit board by reflow soldering technology, the low-temperature solder paste is melted to form a tin layer, and the solar wafer can be guided through the tin layer and the conductive line.
  • the layout of the solar wafer and the conductive line for example, reducing the area of the solar wafer, and thinly arranging the solar wafer, the finally obtained high-conduction high-voltage solar photovoltaic glass sheet also has high light transmittance and can be applied to agriculture.
  • the roof of the greenhouse needs to be used in a large-area light-transmitting scene, and has a wider application range than the conventional solar photovoltaic glass.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Dispersion Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Photovoltaic Devices (AREA)
  • Joining Of Glass To Other Materials (AREA)

Abstract

一种高导通高电压太阳能光电玻璃板，包括玻璃基板（1），玻璃基板有两块，玻璃基板的表面设有由印刷于玻璃基板空气面的导电浆料在烘烤、加热和冷却后与玻璃基板表面熔融的导电线路（2），两块玻璃基板之间夹有电极位于两面的太阳能晶片（7），太阳能晶片的两个电极分别通过锡层（4）与两块玻璃基板的导电线路的焊盘（3）连接，两块玻璃基板的边缘设置有密封胶（8）；玻璃基板为钢化玻璃基板；导电线路表面除去焊接太阳能晶片的焊盘以外的部分覆盖有PCB有机阻焊漆。高导通高电压太阳能光电玻璃板具有高导通率、高透光率的特点，大功率应用时具有良好的导热能力，能够应用于农业大棚顶棚等需要大面积透光的场景使用。

Description

高导通高电压太阳能光电玻璃板 技术领域
本发明涉及一种高导通高电压太阳能光电玻璃板，属于电子器件领域。
背景技术
电子产业作为国民支柱行业，近年来的发展日新月异，特别是以轻、薄、短、小为发展趋势的终端产品，对其基础产业——印制线路板行业，提出了高密度、小体积、高导电性等更高要求。线路板技术在这种背景下迅速发展壮大，而各个弱电领域的行业，如电脑及周边辅助系统、医疗器械、手机、数码(摄)像机、通讯器材、精密仪器、航空航天等，都对印制线路板的工艺及品质提出了许多具体而明确的技术规范。
传统的太阳能光电玻璃首先在太阳能晶片上制作电极，正负极可以位于太阳能晶片的同一面，也可以位于太阳能晶片的正反面，一般传统太阳能光电玻璃使用的带电极的太阳能晶片，其电极位于同一面。由于太阳能晶片为晶体硅，本身非常薄且脆，需要利用碰焊工艺带电极的太阳能晶片通过一组铜条焊接在具有承压作用的带有电子线路的底板上，最后利用层压工艺将太阳能电池模块安装于玻璃面板上，玻璃面板主要起到隔绝和防护的作用。
由于太阳能光电玻璃需要承受的电流大、电压强，则需要导电能力非常强，然而这种传统的太阳能光电玻璃，由于其本身带有电子线路的底板导通率有限，导致整个太阳能光电玻璃板的导通率非常有限。同时，碰焊工艺使得电路之间互联性非常强，仅一面覆盖有玻璃，太阳能晶片组装承压在玻璃上，在大功率高电压使用过程中，一旦太阳能光电玻璃板破碎或线路出现问题，很容易引起短路，存在很大的安全隐患，难以通过3C安规认证，并且碰焊机价格昂贵，效率低。此外，传统的太阳能光电玻璃板是不透明的，其适用场合非常有限。
发明内容
为了解决现有技术的不足，本发明提供了一种高导通高电压太阳能光电玻璃板，透光率超过90％，具有超导电能力，导电阻抗低于5×10-8Ω，制成的高导通透明玻璃基电路板无介质结合，使电路层在大功率应用时具有良好的导热能力，并且电路层与玻璃板分子紧密熔合，焊接太阳能晶片后不易剥落且整体高导通高透明，并且能够适用于大功率高电压的场合使用。
本发明为解决其技术问题所采用的技术方案是：提供了一种高导通高电压太 阳能光电玻璃板，包括玻璃基板，所述玻璃基板有两块，玻璃基板的表面设有由印刷于玻璃基板空气面的导电浆料在烘烤、加热和冷却后与玻璃基板表面熔融的导电线路，所述导电线路为石墨烯层，或者为由表层的石墨烯层和底层的与玻璃基板熔融的金属层，石墨烯层与金属层之间的接触面相互熔融；两块玻璃基板之间夹有电极位于两面的太阳能晶片，所述太阳能晶片的两个电极分别通过锡层与两块玻璃基板的导电线路的焊盘连接，两块玻璃基板的边缘设置有密封胶；所述玻璃基板为钢化玻璃基板；所述导电线路表面除去焊接太阳能晶片的焊盘以外的部分覆盖有PCB有机阻焊漆。
所述玻璃基板的表面与导电线路的上表面平齐。
两块玻璃基板之间的间隙小于2mm。
所述导电浆料由质量比为65～75：3：5～10：10～20：1～3的导电粉、低温玻璃粉、乙基纤维素、松油醇以及顺丁烯二酸二丁酯组成，其中导电粉为石墨烯粉或者金属粉与石墨烯粉的混合物；若导电粉为金属粉与石墨烯粉的混合物，则石墨烯粉占导电浆料的质量百分比为2‰～5％。
所述玻璃基板的表面设有由印刷于玻璃基板空气面的导电浆料在在120～150℃的温度下烘烤100～200秒后、再置于550～600℃温度环境中300～360秒、然后置于710～730℃温度环境中维持120～220秒、最后冷却后与玻璃基板表面熔融的导电线路。
本发明基于其技术方案所具有的有益效果在于：
(1)本发明的玻璃基板与导电线路之间为熔融关系，联系紧密，具有超导电能力，导电阻抗低于5×10-8Ω，太阳能晶片和导电线路组成的完整电路能够高效运作；
(2)本发明的玻璃基板与导电线路之间为熔融关系，无介质结合，使电路层在大功率应用时具有良好的导热能力，并且电路层与玻璃基板分子紧密熔合，可进行太阳能晶片贴片且太阳能晶片不易剥落；
(3)本发明的导电浆料中石墨烯虽然含量少，仅占导电浆料的质量百分比为2‰～5％，但其分子排列极其致密，质量轻，能够浮于金属分子表面，由于其比金属耐磨且导电率高，因此最终形成的导电线路仍能保证其高导通率；石墨烯几乎是完全透明的，所以制作出来的玻璃基电路板能保证高透光率，透光率超过90％；
(4)本发明的玻璃基板的表面与导电线路上表面平齐，整个高导通透明玻璃基电路板的表面平滑，导电线路不易损坏；
(5)本发明的导电线路可二次覆盖有PCB有机阻焊漆，其将导电线路上待 焊接太阳能晶片的焊盘留出，可以对电路层进行保护，防止导电线路表面氧化，维持超导电能力；
(6)本发明的导电线路完全熔融于玻璃基板上，若高导通高电压太阳能光电玻璃板破碎，整个电路随即断开，并且玻璃本身是不导电的，不会再形成电压，能够通过安规，适合高电压大功率场景使用，仅需要将直流转换为交流即可直接输出到高电压电网；而传统的太阳能光电玻璃板不易通过安规，只能允许低电压使用，若须与高电压电网连通，需要将低电压转换为高压交流电；
(7)由于太阳能晶片通过回流焊技术焊接于高透光率的玻璃基电路板上，低温锡膏熔化后形成锡层，太阳能晶片可通过锡层与导电线路导通，通过设计太阳能晶片和导电线路的布局，例如缩小太阳能晶片的面积，将太阳能晶片稀疏排列，则最终制得的高导通高电压太阳能光电玻璃板也具有高透光率，能够应用于农业大棚顶棚等需要大面积透光的场景使用，与传统太阳能光电玻璃板相比应用范围更广。
附图说明
图1是本发明的高导通高电压太阳能光电玻璃板的结构示意图。
图2是图1的AA向剖视图。
图中：1-玻璃基板，2-导电线路，3-焊盘，4-锡层，5-石墨烯层，6-金属层，7-太阳能晶片，8-密封胶。
具体实施方式
下面结合附图和实施例对本发明作进一步说明。
参照图1和图2，本发明提供了一种高导通高电压太阳能光电玻璃板，包括玻璃基板1，所述玻璃基板有两块，玻璃基板的表面设有由印刷于玻璃基板空气面的导电浆料在烘烤、加热和冷却后与玻璃基板表面熔融的导电线路2，所述导电线路为石墨烯层，或者为由表层的石墨烯层5和底层的与玻璃基板熔融的金属层6，石墨烯层与金属层之间的接触面相互熔融；两块玻璃基板之间夹有电极位于两面的太阳能晶片7，所述太阳能晶片的两个电极分别通过锡层4与两块玻璃基板的导电线路的焊盘连接，两块玻璃基板的边缘设置有密封胶8。
所述玻璃基板的表面与导电线路的上表面平齐。
两块玻璃基板之间的间隙小于2mm。
所述玻璃基板为钢化玻璃基板。
所述导电浆料由质量比为65～75：3：5～10：10～20：1～3的导电粉、低 温玻璃粉、乙基纤维素、松油醇以及顺丁烯二酸二丁酯组成，其中导电粉为石墨烯粉或者金属粉与石墨烯粉的混合物；若导电粉为金属粉与石墨烯粉的混合物，则石墨烯粉占导电浆料的质量百分比为2‰～5％。
所述玻璃基板的表面设有由印刷于玻璃基板空气面的导电浆料在在120～150℃的温度下烘烤100～200秒后、再置于550～600℃温度环境中300～360秒、然后置于710～730℃温度环境中维持120～220秒、最后冷却后与玻璃基板表面熔融的导电线路。
本发明的高导通高电压太阳能光电玻璃板制作工艺如下：
(1)通过以下过程制作高导通透明玻璃基电路板：
(a)将导电浆料印刷在玻璃板的空气面；所述导电浆料由质量比为65～75：3：5～10：10～20：1～3的导电粉、低温玻璃粉、乙基纤维素、松油醇以及顺丁烯二酸二丁酯组成，其中导电粉为石墨烯粉或者金属粉与石墨烯粉的混合物；若导电粉为金属粉与石墨烯粉的混合物，则石墨烯粉占导电浆料的质量百分比为2‰～5％；
(b)将覆盖有导电浆料的玻璃板在120～150℃的温度下烘烤100～200秒；
(c)将玻璃板置于550～600℃温度环境中300～360秒，然后置于710～730℃温度环境中维持120～220秒，最后迅速冷却至常温，则此时导电浆料形成导电线路分布于玻璃板的表面且与玻璃板熔融，导电线路成为玻璃板的一部分，得到高导通透明玻璃基电路板，且玻璃板为钢化玻璃；
(2)取两块高导通透明玻璃基电路板，沿两块高导通透明玻璃基电路板的导电线路部分刮涂低温锡膏；
(3)取带电极的太阳能晶片，所述带电极的太阳能晶片的正极和负极分别位于太阳能晶片的正面和反面；将太阳能晶片夹于两块高导通透明玻璃基电路板之间，使太阳能晶片的正极与一块高导通透明玻璃及电路板上的低温锡膏接触，同时太阳能晶片的负极与另一块高导通透明玻璃及电路板上的低温锡膏接触；
(4)使用回流焊技术对导电线路部分加热，使低温锡膏熔化；
(5)将两块高导通透明玻璃基电路板的边缘密封。
本发明的导电线路完全熔融于玻璃基板上，若高导通高电压太阳能光电玻璃板破碎，整个电路随即断开，并且玻璃本身是不导电的，不会再形成电压，能够通过安规，适合高电压大功率场景使用，仅需要将直流转换为交流即可直接输出到高电压电网；而传统的太阳能光电玻璃板不易通过安规，只能允许低电压使用，若须与高电压电网连 通，需要将低电压转换为高压交流电；由于太阳能晶片通过回流焊技术焊接于高透光率的玻璃基电路板上，低温锡膏熔化后形成锡层，太阳能晶片可通过锡层与导电线路导通，通过设计太阳能晶片和导电线路的布局，例如缩小太阳能晶片的面积，将太阳能晶片稀疏排列，则最终制得的高导通高电压太阳能光电玻璃板也具有高透光率，能够应用于农业大棚顶棚等需要大面积透光的场景使用，与传统太阳能光电玻璃板相比应用范围更广。

Claims (4)

  1. 一种高导通高电压太阳能光电玻璃板，包括玻璃基板，其特征在于：所述玻璃基板有两块，玻璃基板的表面设有由印刷于玻璃基板空气面的导电浆料在烘烤、加热和冷却后与玻璃基板表面熔融的导电线路，所述导电线路为石墨烯层，或者为由表层的石墨烯层和底层的与玻璃基板熔融的金属层，石墨烯层与金属层之间的接触面相互熔融；两块玻璃基板之间夹有电极位于两面的太阳能晶片，所述太阳能晶片的两个电极分别通过锡层与两块玻璃基板的导电线路的焊盘连接，两块玻璃基板的边缘设置有密封胶；所述玻璃基板为钢化玻璃基板；所述导电线路表面除去焊接太阳能晶片的焊盘以外的部分覆盖有PCB有机阻焊漆；所述导电浆料由质量比为65～75：3：5～10：10～20：1～3的导电粉、低温玻璃粉、乙基纤维素、松油醇以及顺丁烯二酸二丁酯组成，其中导电粉为石墨烯粉或者金属粉与石墨烯粉的混合物；若导电粉为金属粉与石墨烯粉的混合物，则石墨烯粉占导电浆料的质量百分比为2‰～5％。
  2. 根据权利要求1所述的高导通高电压太阳能光电玻璃板，其特征在于：所述玻璃基板的表面与导电线路的上表面平齐。
  3. 根据权利要求1所述的高导通高电压太阳能光电玻璃板，其特征在于：两块玻璃基板之间的间隙小于2mm。
  4. 根据权利要求1所述的高导通高电压太阳能光电玻璃板，其特征在于：所述玻璃基板的表面设有由印刷于玻璃基板空气面的导电浆料在在120～150℃的温度下烘烤100～200秒后、再置于550～600℃温度环境中300～360秒、然后置于710～730℃温度环境中维持120～220秒、最后冷却后与玻璃基板表面熔融的导电线路。
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