WO2017122271A1

WO2017122271A1 - High-frequency amplifier and amplifier module

Info

Publication number: WO2017122271A1
Application number: PCT/JP2016/050671
Authority: WO
Inventors: 英悟桑田; 裕太郎山口; 山中　宏治; 淳西原
Original assignee: 三菱電機株式会社
Priority date: 2016-01-12
Filing date: 2016-01-12
Publication date: 2017-07-20
Also published as: JP6482685B2; JPWO2017122271A1

Abstract

A high-frequency amplifier is provided with: a harmonic supply circuit (3) that blocks passage of a fundamental included in an RF signal amplified by a preceding-stage transistor (1) and supplies a harmonic included in the RF signal to a subsequent-stage transistor (2); and a fundamental supply circuit (4) that blocks passage of the harmonic included in the RF signal amplified by the preceding-stage transistor (1) and supplies the fundamental included in the RF signal to the subsequent-stage transistor (2). As a result, when the subsequent-stage transistor (2) amplifies the RF signal, the harmonic included in the RF signal amplified by the preceding-stage transistor (1) can be used.

Description

High frequency amplifier and amplifier module

The present invention relates to a high frequency amplifier in which a plurality of transistors for amplifying a signal are connected in cascade, and an amplifier module in which a plurality of high frequency amplifiers are mounted.

For example, a high-frequency amplifier disclosed in Non-Patent Document 1 includes an open stub having a length of a quarter wavelength of harmonics and a phase adjustment line with respect to an input / output terminal of a transistor that amplifies a signal. A harmonic matching circuit is connected.
Since a harmonic matching circuit is connected to the input / output terminal of the transistor, high-efficiency operation can be realized.

Since the conventional high-frequency amplifier is configured as described above, when cascaded in multiple stages, a harmonic matching circuit is connected between the transistor stages. Since this harmonic matching circuit is configured using an open stub, the short-circuit point for the harmonics included in the signal amplified by the front-stage transistor is different between the front-stage transistor and the rear-stage transistor. It is formed on the main line that connects the two. For this reason, the harmonic contained in the signal amplified by the front-stage transistor is reflected at the short-circuit point, the harmonic returns to the front-stage transistor, and the harmonic is supplied to the rear-stage transistor. Not. Therefore, the latter-stage transistor has a problem that, when a signal is amplified, the harmonics contained in the signal amplified by the former-stage transistor cannot be used.

The present invention has been made to solve the above-described problems. When the rear-stage transistor amplifies the signal, it is possible to use a harmonic contained in the signal amplified by the front-stage transistor. An object of the present invention is to obtain a high frequency amplifier that can be used.
Another object of the present invention is to obtain an amplifier module on which a plurality of the high-frequency amplifiers are mounted.

The high-frequency amplifier according to the present invention is connected between a plurality of transistors connected in cascade and a plurality of transistor stages, and passes a fundamental wave contained in a signal amplified by a transistor on the front stage side. A harmonic supply circuit that blocks and supplies the harmonics included in the signal to the subsequent transistor, and is connected in parallel with the harmonic supply circuit, and is included in the signal amplified by the previous transistor. And a fundamental wave supply circuit for preventing the passage of higher harmonics and supplying the fundamental wave included in the signal to the transistor on the rear stage side.

According to this invention, the harmonic supply circuit that blocks the passage of the fundamental wave included in the signal amplified by the transistor on the front stage side and supplies the harmonic wave included in the signal to the transistor on the rear stage side. And a fundamental wave supply circuit that blocks passage of harmonics contained in the signal amplified by the front-stage transistor and supplies the fundamental wave contained in the signal to the rear-stage transistor. Thus, when the rear-stage transistor amplifies the signal, there is an effect that the harmonics contained in the signal amplified by the front-stage transistor can be used.

1 is a configuration diagram showing a high-frequency amplifier according to Embodiment 1 of the present invention. It is a block diagram which shows the high frequency amplifier by Embodiment 2 of this invention. It is a block diagram which shows the fundamental wave supply circuit 10 of the high frequency amplifier by Embodiment 2 of this invention. It is a block diagram which shows the high frequency amplifier by Embodiment 3 of this invention. 6 is an explanatory diagram showing a relationship between a phase difference between a harmonic and a fundamental wave and an operation efficiency of a transistor 2. It is a block diagram which shows the high frequency amplifier by Embodiment 4 of this invention.

Hereinafter, in order to explain the present invention in more detail, modes for carrying out the present invention will be described with reference to the accompanying drawings.

Embodiment 1 FIG.
1 is a block diagram showing a high-frequency amplifier according to Embodiment 1 of the present invention.
Although FIG. 1 shows an example of a high frequency amplifier in which two transistors are connected in cascade, a high frequency amplifier in which three or more transistors are connected in cascade may be used.
In FIG. 1, a transistor 1 is a pre-stage transistor that amplifies a signal.
The transistor 2 is a rear-stage transistor that amplifies the signal amplified by the transistor 1.
In the first embodiment, an example in which the transistors 1 and 2 are bipolar transistors will be described. In FIG. 1, the input terminals of transistors 1 and 2 are

base terminals

1a and 2a, the output terminals of transistors 1 and 2 are

collector terminals

1b and 2b, and the

emitter terminals

1c and 2c of transistors 1 and 2 are connected to the ground. An example is shown. However, the connection form of the input terminals and output terminals of the transistors 1 and 2 is merely an example.
In the first embodiment, an example in which the transistors 1 and 2 are bipolar transistors will be described. However, the transistors 1 and 2 are not limited to bipolar transistors, and may be field effect transistors, for example. For example, if the transistors 1 and 2 are field effect transistors, the input terminals of the transistors 1 and 2 are connected to the gate terminal, the output terminals of the transistors 1 and 2 are connected to the drain terminal, and the source terminals of the transistors 1 and 2 are connected to the ground. The form is considered.

The harmonic supply circuit 3 is connected between the collector terminal 1b that is the output terminal of the transistor 1 and the base terminal 2a that is the input terminal of the transistor 2, and is included in the signal amplified by the transistor 1 on the front stage side. This is a circuit that blocks the passage of the fundamental wave and supplies harmonics contained in the signal to the transistor 2 on the rear stage side.
As a circuit configuration of the harmonic supply circuit 3, for example, harmonic matching is performed to match the output impedance of the transistor 1 and the input impedance of the transistor 2 at the harmonic frequency included in the signal amplified by the transistor 1. A circuit etc. can be considered.

The fundamental wave supply circuit 4 is connected in parallel with the harmonic wave supply circuit 3 and prevents the harmonic wave contained in the signal amplified by the transistor 1 on the previous stage from passing through and is included in the signal. This is a circuit for supplying a fundamental wave to the transistor 2 on the rear stage side.
As the circuit configuration of the fundamental wave supply circuit 4, for example, fundamental wave matching that matches the output impedance of the transistor 1 and the input impedance of the transistor 2 at the fundamental frequency included in the signal amplified by the transistor 1. A circuit etc. can be considered.

The bias circuit 5 is a circuit that applies a bias voltage to the base terminal 2 a of the transistor 2.
FIG. 1 shows an example in which the bias circuit 5 is connected to the base terminal 2 a of the transistor 2, but the connecting point may be anywhere as long as it is between the transistor 1 and the transistor 2. It may be connected to the terminal 1b.

Next, the operation will be described.
When an RF (radio frequency) signal that is a signal to be amplified is input from a base terminal 1a that is an input terminal, the transistor 1 amplifies the RF signal, and an RF signal that is amplified from a collector terminal 1b that is an output terminal Is output.

When the harmonic supply circuit 3 receives the amplified RF signal from the collector terminal 1b of the transistor 1, the harmonic supply circuit 3 prevents the fundamental wave included in the RF signal from passing, and the harmonic included in the RF signal. Is supplied to the base terminal 2a of the transistor 2 on the rear stage side.
When receiving the amplified RF signal from the collector terminal 1b of the transistor 1, the fundamental wave supply circuit 4 blocks the passage of harmonics contained in the RF signal, and the fundamental wave contained in the RF signal. Is supplied to the base terminal 2a of the transistor 2 on the rear stage side.

When the harmonic wave is supplied from the harmonic wave supply circuit 3 to the base terminal 2a and the fundamental wave is supplied from the fundamental wave supply circuit 4 to the base terminal 2a, the transistor 2 superimposes the fundamental wave and the harmonic wave. The signal is amplified, and the amplified signal is output from the collector terminal 2b which is an output terminal.

Here, in order to realize a highly efficient operation, the transistor 2 may be a class F amplifier or an inverse class F amplifier capable of realizing a high efficiency operation.
High-efficiency amplifiers such as class F amplifiers and inverse class F amplifiers have a reflection circuit that reflects harmonic power on the output side of the transistor, which is an amplifying element, and the reflection circuit is caused by the nonlinearity of the transistor. High-efficiency operation is realized by reflecting the generated harmonic power to the transistor side and using the harmonic power when the transistor amplifies the RF signal.
In a high-efficiency amplifier, when current is supplied to the transistor from the input terminal, the most efficient operation is achieved when the power that is the product of the voltage appearing at the output terminal of the transistor and the current is minimized. Realized. That is, the most efficient operation is realized when the overlap between the current waveform and the voltage waveform is minimized.

For example, when the high-efficiency amplifier is a class F amplifier, the overlap between the current waveform and the voltage waveform is minimized when the current waveform becomes a rectangular wave f (x). In the case of an inverse class F amplifier, the overlap between the current waveform and the voltage waveform is minimized when the voltage waveform becomes a rectangular wave f (x).
At this time, when the fundamental wave and harmonic components of the rectangular wave f (x) are expanded by a Fourier series, the following equation (1) is obtained.

In equation (1), x is the phase of the fundamental wave.

From the equation (1), when ignoring harmonics with a small fifth or higher harmonic, when the amplitude of the third harmonic is one third of the amplitude of the fundamental wave, the current waveform or voltage waveform Approaches the rectangular wave f (x), and the efficiency is improved.
Therefore, the transistor 2 achieves high-efficiency operation when a third harmonic wave having an amplitude that is 1/3 of that of the fundamental wave input from the base terminal 2a as an input terminal is input. Is done.

When the transistor 2 is composed of a high-efficiency amplifier such as a class F amplifier or an inverse class F amplifier, a reflection circuit is provided. Therefore, when the RF signal is amplified, the transistor 2 is generated due to the nonlinearity of the transistor 3 Although the harmonic power of the harmonic can be used, in general, the power of the third harmonic generated due to the nonlinearity of the transistor 2 is small, and the amplitude of the harmonic of the third harmonic is It is considerably smaller than one third of the amplitude of the fundamental wave.
Therefore, if the harmonic supply circuit 3 is not connected between the stages of the transistor 1 and the transistor 2, it is difficult to operate the transistor 2 with high efficiency. Since the harmonic supply circuit 3 that supplies the harmonic contained in the RF signal amplified by 1 to the base terminal 2a of the transistor 2 is connected between the stage of the transistor 1 and the transistor 2, the harmonic of the third harmonic The efficiency of the transistor 2 can be increased by bringing the amplitude of the wave closer to one third of the amplitude of the fundamental wave.

As apparent from the above, according to the first embodiment, the fundamental wave included in the RF signal amplified by the transistor 1 on the front stage side is prevented from passing, and the harmonics included in the RF signal are prevented. A harmonic supply circuit 3 that supplies a wave to the transistor 2 on the rear stage side and a harmonic wave included in the RF signal amplified by the transistor 1 on the front stage side are blocked and included in the RF signal. Since the fundamental wave supply circuit 4 for supplying the fundamental wave to the rear-stage transistor 2 is provided, when the rear-stage transistor 2 amplifies the RF signal, the RF signal amplified by the front-stage transistor 1 is converted into an RF signal. The included harmonics can be used. Therefore, it is possible to obtain an effect capable of realizing a high-efficiency operation of the rear-stage transistor 2.

Embodiment 2. FIG.
In the first embodiment, the bias circuit 5 for applying a bias voltage to the base terminal 2a of the transistor 2 is connected to the base terminal 2a of the transistor 2. However, the bias circuit is an internal part of the fundamental wave supply circuit. May be implemented.

2 is a block diagram showing a high-frequency amplifier according to Embodiment 2 of the present invention. In FIG. 2, the same reference numerals as those in FIG.
The fundamental wave supply circuit 10 is connected in parallel with the harmonic wave supply circuit 3 and, like the fundamental wave supply circuit 4 in FIG. 1, harmonics contained in the RF signal amplified by the transistor 1 on the preceding stage side. This is a circuit that blocks the passage and supplies the fundamental wave included in the RF signal to the transistor 2 on the rear stage side.
Unlike the fundamental wave supply circuit 4 of FIG. 1, the fundamental wave supply circuit 10 has a bias circuit mounted therein.

FIG. 3 is a block diagram showing a fundamental wave supply circuit 10 of a high frequency amplifier according to Embodiment 2 of the present invention. In FIG. 3, the same reference numerals as those in FIG. In FIG. 3, the harmonic supply circuit 3 is omitted for simplification of the drawing.
The main line 11 is a line connecting the collector terminal 1 b of the transistor 1 and the base terminal 2 a of the transistor 2.
The fundamental wave matching circuit 12 includes, for example,

filter circuits

12a and 12b including a low-pass filter, a high-pass filter, or a band-pass filter, or

filter circuits

12a and 12b in which these filters are combined. 1 is a circuit for matching the output impedance of the transistor 1 and the input impedance of the transistor 2 at the frequency of the fundamental wave included in the RF signal amplified by 1.

Here, an example of the fundamental wave matching circuit 12 composed of two

filter circuits

12a and 12b is shown, but the fundamental wave matching circuit 12 is a harmonic contained in the RF signal amplified by the transistor 1. Any circuit may be used as long as it is a circuit that prevents the signal from passing through and supplies the fundamental wave contained in the RF signal to the base terminal 2a of the transistor 2, and is not limited to the one constituted by the

filter circuits

12a and 12b.
For example, it is fundamental from a transmission line, impedance conversion transformer, or impedance conversion balun having a length of one quarter of the wavelength of the fundamental wave that has the function of preventing the passage of harmonic waves and allowing the passage of the fundamental wave. The wave matching circuit 12 can be configured.

The bias circuit 13 is a circuit that is connected to the main line 11 and the shunt and applies a bias voltage to the base terminal 2a of the transistor 2. The bias circuit 13 is for the harmonics included in the RF signal amplified by the transistor 1. The short point is formed in the main line 11.
One end of the transmission line 13a is connected to the junction 12c between the filter circuit 12a and the filter circuit 12b, and has a length of one quarter of the wavelength of the fundamental wave included in the RF signal amplified by the transistor 1. is there.
The DC cut circuit 13b is a circuit that is connected between the other end of the transmission line 13a and the ground, and cuts off a direct current component. It is composed of stubs or interdigital capacitors.
The power source 13c is connected between the other end of the transmission line 13a and the ground, and outputs a bias voltage.

Next, the operation will be described.
Since the components other than the fundamental wave supply circuit 10 are the same as those in the first embodiment, the fundamental wave supply circuit 10 will be described here.
The fundamental wave matching circuit 12 of the fundamental wave supply circuit 10 prevents the harmonics contained in the RF signal amplified by the transistor 1 from passing, and causes the fundamental wave contained in the RF signal to pass through the base of the transistor 2. This is a circuit to be supplied to the terminal 2a.
Therefore, the harmonics included in the RF signal output from the collector terminal 1b of the transistor 1 do not ideally pass through the fundamental matching circuit 12, but some power of the harmonics does not pass through the fundamental matching circuit 12. May pass through.

However, in the second embodiment, the transmission line 13a of the bias circuit 13 connected to the main line 11 and the shunt is a line having a length that is a quarter of the wavelength of the fundamental wave. In the circuit 12, the impedance of the bias circuit 13 seen from the junction 12c between the filter circuit 12a and the filter circuit 12b is open at the fundamental wave and shorted at the even harmonics.
For this reason, the short point about the harmonic of an even-numbered harmonic is formed in the junction 12c of the filter circuit 12a and the filter circuit 12b.
Therefore, even harmonics included in the RF signal output from the collector terminal 1b of the transistor 1 are reflected at the junction 12c where the short point is formed, and are reflected toward the collector terminal 1b side of the transistor 1. Therefore, even harmonics included in the RF signal are not supplied to the base terminal 2a of the transistor 2.
In other words, the bias circuit 13 has a function of blocking even harmonics, and has higher harmonic blocking performance than the case where the fundamental wave supply circuit 10 is configured by the fundamental wave matching circuit 12 alone. Can be increased.
In the second embodiment, the bias circuit 13 has a function of cutting off even harmonics. However, for example, by connecting an open stub to the junction 12c, the harmonics of odd harmonics can be obtained. A wave blocking function may be provided.

As can be seen from the above, according to the second embodiment, the fundamental wave supply circuit 10 has the output impedance of the transistor 1 and the transistor at the frequency of the fundamental wave included in the RF signal amplified by the transistor 1. A fundamental wave matching circuit 12 for matching with the input impedance of 2, and a main line 11 and a shunt connected to the shunt, and a short point for a harmonic contained in the RF signal amplified by the transistor 1 is formed in the main line 11. Therefore, it is possible to improve the cutoff performance of even harmonics as compared with the fundamental wave supply circuit 4 of FIG. Therefore, it is possible to achieve the effect that the high-efficiency operation of the transistor 2 can be realized more reliably than in the first embodiment.

Embodiment 3 FIG.
In the first and second embodiments, the harmonic supply circuit 3 matches the output impedance of the transistor 1 and the input impedance of the transistor 2 at the harmonic frequency included in the RF signal amplified by the transistor 1. Although the example comprised by the harmonic matching circuit which aims at this was shown, you may be comprised from the harmonic matching circuit and the phase adjuster which adjusts the phase of a harmonic.

4 is a block diagram showing a high frequency amplifier according to Embodiment 3 of the present invention. In FIG. 4, the same reference numerals as those in FIGS.
The harmonic supply circuit 20 includes a harmonic matching circuit 21 and a phase adjuster 22.
The harmonic matching circuit 21 is composed of a high-pass filter, for example, and matches the output impedance of the transistor 1 and the input impedance of the transistor 2 at the harmonic frequency included in the RF signal amplified by the transistor 1. It is a circuit which aims at.
The phase adjuster 22 is a circuit that adjusts the phase of the harmonic wave that has passed through the harmonic matching circuit 21.

Next, the operation will be described.
In the first and second embodiments, the harmonics included in the RF signal are applied to the base terminal of the transistor 2 in order to increase the operation efficiency of the transistor 2 by bringing the current waveform or voltage waveform close to the rectangular wave f (x). A harmonic supply circuit 3 to be supplied to 2a is connected between the stages of the transistor 1 and the transistor 2.
However, since there is a certain relationship between the phase difference between the harmonic and the fundamental wave supplied to the base terminal 2a of the transistor 2 and the operation efficiency of the transistor 2, the transistor can be further adjusted by adjusting the phase of the harmonic. 2 may be able to increase the operating efficiency.

FIG. 5 is an explanatory diagram showing the relationship between the phase difference between the harmonic and the fundamental wave and the operation efficiency of the transistor 2.
In FIG. 5, ∠Γ _s (2f ₀ ) indicated on the horizontal axis indicates the phase difference between the harmonic of the second harmonic contained in the RF signal and the fundamental wave, and ΔPAE indicated on the vertical axis is The operating efficiency of the transistor 2 is shown.
The relationship between the phase difference and the operation efficiency of the transistor 2 varies depending on the size of the transistor 1 on the previous stage, the frequency of the RF signal, and the like. In the example of FIG. 5, when the phase difference is about 215 [deg], the transistor The operating efficiency of 2 is the highest. Hereinafter, the phase difference when the operation efficiency of the transistor 2 becomes _maximum is represented by ∠Γ _{s, max} .

The phase adjuster 22 adjusts the phase of the harmonic wave that has passed through the harmonic matching circuit 21 by a preset phase adjustment amount ΔM, and supplies the harmonic wave after the phase adjustment to the base terminal 2 a of the transistor 2. .
In general, the phase difference ∠Γ _s between the harmonic of the second harmonic contained in the RF signal that is the signal to be amplified by the high-frequency amplifier and the fundamental wave is known at the design stage.
For this reason, the phase difference ∠Γ _{s, mod} between the harmonic phase adjusted by the harmonic matching circuit 21 and the fundamental wave coincides with the phase difference ∠Γ _{s, max} that maximizes the operation efficiency of the transistor 2. As described above, the phase adjustment amount ΔM of the harmonic matching circuit 21 is set in advance.
ΔM = | ∠Γ _{s, mod} −∠Γ _s | (2)
Thereby, the phase adjuster 22 adjusts the phase of the harmonic wave that has passed through the harmonic matching circuit 21 in the plus direction or the minus direction by the phase adjustment amount ΔM set in advance, so that the phase difference ∠Γ _{s, mod} coincides with the phase difference ∠Γ _{s, max at} which the operation efficiency of the transistor 2 is maximized.

As is apparent from the above, according to the third embodiment, the harmonic supply circuit 20 has the output frequency of the transistor 1 and the transistor at the harmonic frequency included in the RF signal amplified by the transistor 1. 2 is configured with a harmonic matching circuit 21 for matching with the input impedance of 2 and a phase adjuster 22 for adjusting the phase of the harmonics that have passed through the harmonic matching circuit 21. In addition, the operation efficiency of the transistor 2 can be further increased.

In the third embodiment, an example is shown in which the phase adjuster 22 is connected to the output side of the harmonic matching circuit 21, but the phase adjuster 22 is connected to the input side of the harmonic matching circuit 21. It may be a thing.

Embodiment 4 FIG.
In the third embodiment, the high-frequency amplifier is mounted with the harmonic supply circuit 20 including the harmonic matching circuit 21 and the phase adjuster 22. However, the harmonic supply circuit 20 further includes A harmonic attenuator that attenuates the amplitude of the harmonic may be provided.

6 is a block diagram showing a high-frequency amplifier according to Embodiment 4 of the present invention. In FIG. 6, the same reference numerals as those in FIG.
The harmonic supply circuit 30 includes a harmonic matching circuit 21, a phase adjuster 22, and a harmonic attenuator 31.
The harmonic attenuator 31 is a circuit that attenuates the amplitude of the harmonic whose phase is adjusted by the phase adjuster 22.

In the first to third embodiments, the harmonics included in the RF signal are applied to the base terminal of the transistor 2 in order to increase the operation efficiency of the transistor 2 by bringing the current waveform or voltage waveform close to the rectangular wave f (x). A harmonic supply circuit 3 or 20 to be supplied to 2a is connected between the stages of the transistor 1 and the transistor 2.
As is clear from the equation (1), if the harmonics of 5th harmonic or higher are ignored, the amplitude of the 3rd harmonic supplied to the base terminal 2a of the transistor 2 is 1/3 of the amplitude of the fundamental wave. At some point, the operating efficiency of the transistor 2 is the highest, and the operating efficiency of the transistor 2 is reduced when the amplitude of the third harmonic is greater than one third of the amplitude of the fundamental wave.

In general, the amplitude of the third harmonic contained in the RF signal amplified by the transistor 1 is much smaller than one third of the amplitude of the fundamental, and therefore the harmonic supply circuit 3 or 20, even if the harmonics included in the RF signal are supplied to the base terminal 2 a of the transistor 2, the amplitude of the third harmonic is larger than one third of the amplitude of the fundamental wave. Few.
However, when the size of the transistor 1 on the front stage side is large and the power of the RF signal output from the transistor 1 is large, or when the frequency of the RF signal is low, the RF signal output from the transistor 1 is included. As a result, the amplitude of the third harmonic wave supplied to the base terminal 2a of the transistor 2 may be larger than one third of the amplitude of the fundamental wave.

Therefore, in the fourth embodiment, even if the amplitude of the harmonic of the third harmonic is larger than one third of the amplitude of the fundamental wave, the harmonic supply circuit 30 includes a harmonic attenuator 31 that attenuates the amplitude of the harmonic.
Note that, since the harmonic supply circuit 30 includes the harmonic matching circuit 21, it is known at the design stage how large the harmonic of the third harmonic is at the base terminal 2a of the transistor 2. It is. For this reason, in the fourth embodiment, the harmonic attenuator 31 is set in advance so that the amplitude of the harmonic of the third harmonic coincides with one third of the amplitude of the fundamental wave. And

As apparent from the above, according to the fourth embodiment, since the harmonic supply circuit 30 is configured to include the harmonic attenuator 31 that attenuates the amplitude of the harmonic, the harmonic supply circuit 30 includes: By mounting the harmonic matching circuit 21, even when the amplitude of the harmonic of the third harmonic is larger than one third of the amplitude of the fundamental wave, it is possible to realize the high operation efficiency of the transistor 2. Play.

In the fourth embodiment, an example is shown in which the harmonic attenuator 31 is connected to the output side of the phase adjuster 22, but the harmonic is applied to the input side of the harmonic matching circuit 21 or the input side of the phase adjuster 22. The wave attenuator 31 may be connected.
Further, the phase adjuster 22 may not be mounted on the harmonic supply circuit 30, and the harmonic attenuator 31 may be connected to the input side or the output side of the harmonic matching circuit 21.

Embodiment 5 FIG.
In the first to fourth embodiments, the high-frequency amplifier capable of realizing the high-efficiency operation of the rear-stage transistor 2 is shown. However, the high-frequency amplifier according to any one of the first to fourth embodiments is described above. A plurality of amplifier modules, that is, a plurality of signal lines in which a plurality of high-frequency amplifiers according to any of the embodiments are connected in series or a plurality of signal lines into which the high-frequency amplifier according to any of the embodiments is inserted. You may make it obtain the provided amplifier module.

In the present invention, within the scope of the invention, any combination of the embodiments, or any modification of any component in each embodiment, or omission of any component in each embodiment is possible. .

The high-frequency amplifier according to the present invention is suitable for transistors that need to increase the overall operation efficiency by increasing the operation efficiency of the transistors on the subsequent stage among the transistors connected in cascade.

1 transistor (front-stage transistor), 1a base terminal, 1b collector terminal, 1c emitter terminal, 2 transistor (rear-stage transistor), 2a base terminal, 2b collector terminal, 2c emitter terminal, 3 harmonic supply circuit, 4 basic Wave supply circuit, 5 bias circuit, 10 fundamental wave supply circuit, 11 main line, 12 fundamental wave matching circuit, 12a, 12b filter circuit, 12c connection point, 13 bias circuit, 13a transmission line, 13b DC cut circuit, 13c power supply, 20 harmonic supply circuit, 21 harmonic matching circuit, 22 phase adjuster, 30 harmonic supply circuit, 31 harmonic attenuator.

Claims

A plurality of transistors connected in cascade;
Connected between the stages of the plurality of transistors, blocks the fundamental wave included in the signal amplified by the transistor on the front stage side, and converts the harmonics included in the signal to the transistor on the rear stage side A harmonic supply circuit for supplying to
Connected in parallel with the harmonic supply circuit, blocks the harmonics contained in the signal amplified by the previous-stage transistor, and transmits the fundamental wave contained in the signal to the subsequent-stage transistor. A high-frequency amplifier comprising a fundamental wave supply circuit for supplying to the circuit.
The fundamental wave supply circuit includes:
Inserted into the main line connecting the front-stage transistor and the rear-stage transistor, and at the fundamental frequency contained in the signal amplified by the front-stage transistor, the output impedance of the front-stage transistor and the rear-stage transistor A fundamental matching circuit that matches the input impedance of the transistor;
A bias circuit connected to the main line and a shunt and configured to form a short point on the main line with respect to a harmonic contained in a signal amplified by a transistor on the front stage side. Item 4. The high frequency amplifier according to Item 1.
The harmonic supply circuit is
A harmonic matching circuit that matches the output impedance of the front-stage transistor and the input impedance of the rear-stage transistor at the harmonic frequency included in the signal amplified by the front-stage transistor;
2. The high-frequency amplifier according to claim 1, comprising a phase adjuster for adjusting a phase of the harmonic.
The harmonic supply circuit is
A harmonic matching circuit that matches the output impedance of the front-stage transistor and the input impedance of the rear-stage transistor at the harmonic frequency included in the signal amplified by the front-stage transistor;
The high-frequency amplifier according to claim 1, comprising a harmonic attenuator that attenuates the amplitude of the harmonic.
It has multiple high frequency amplifiers that amplify the signal,
The high-frequency amplifier is
A plurality of transistors connected in cascade;
Connected between the stages of the plurality of transistors, blocks the fundamental wave included in the signal amplified by the transistor on the front stage side, and converts the harmonics included in the signal to the transistor on the rear stage side A harmonic supply circuit for supplying to
Connected in parallel with the harmonic supply circuit, blocks the harmonics contained in the signal amplified by the previous-stage transistor, and transmits the fundamental wave contained in the signal to the subsequent-stage transistor. An amplifier module comprising: a fundamental wave supply circuit that supplies power to