WO2017115630A1 - Overcurrent cutoff system - Google Patents

Overcurrent cutoff system Download PDF

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Publication number
WO2017115630A1
WO2017115630A1 PCT/JP2016/086549 JP2016086549W WO2017115630A1 WO 2017115630 A1 WO2017115630 A1 WO 2017115630A1 JP 2016086549 W JP2016086549 W JP 2016086549W WO 2017115630 A1 WO2017115630 A1 WO 2017115630A1
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WO
WIPO (PCT)
Prior art keywords
mosfet
overcurrent
control unit
power source
cutoff
Prior art date
Application number
PCT/JP2016/086549
Other languages
French (fr)
Japanese (ja)
Inventor
正直 島▲崎▼
Original Assignee
カルソニックカンセイ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2015256112A external-priority patent/JP2017121114A/en
Priority claimed from JP2016136894A external-priority patent/JP2018011383A/en
Application filed by カルソニックカンセイ株式会社 filed Critical カルソニックカンセイ株式会社
Publication of WO2017115630A1 publication Critical patent/WO2017115630A1/en

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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
    • H02H3/08—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current
    • H02H3/087—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current for dc applications
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage

Definitions

  • the present invention relates to an overcurrent interruption system.
  • an overcurrent cutoff circuit that has one battery and shuts off the overcurrent by turning off a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) when an overcurrent flows through a shunt resistor (for example, a patent) Reference 1).
  • MOSFET Metal Oxide Semiconductor Field Effect Transistor
  • overcurrent cutoff circuit Since the overcurrent cutoff circuit has only one battery, current can only flow in one direction. Therefore, overcurrent can be interrupted simply by switching on or off the MOSFET. However, when the overcurrent interrupt circuit has two batteries and an overcurrent in the direction opposite to the one direction flows, the overcurrent cannot be interrupted. For this reason, the MOSFET cannot be protected.
  • An object of the present invention made in view of such circumstances is to provide an overcurrent interruption system capable of interrupting overcurrent and protecting a MOSFET regardless of the direction in which the current flows.
  • an overcurrent interruption system includes: A first MOSFET; A current value detection unit for detecting a value of a current flowing through the first MOSFET; A first cut-off unit that can be switched between an on-off state and cuts off an overcurrent flowing in a forward direction of the parasitic diode of the first MOSFET in the off-state; A second shut-off unit that can be switched between an on-off state and shuts off an overcurrent that flows in the reverse direction of the parasitic diode of the first MOSFET in the off-state; A control unit capable of switching and controlling the first blocking unit and the second blocking unit; When the controller determines that an overcurrent is flowing in the forward direction of the parasitic diode of the first MOSFET based on the current detected by the current value detector, the controller turns off the first interrupter. Then, when it is determined that an overcurrent flows in the opposite direction of the parasitic diode of the first MOSFET, the second cutoff unit
  • the first cutoff unit includes a relay connected to the source side of the first MOSFET, It is preferable that the second blocking unit includes the first MOSFET.
  • the control unit determines that an overcurrent flows in the reverse direction of the parasitic diode of the first MOSFET, the control unit preferably maintains the state of the relay.
  • a first power source is connected to the source side of the first MOSFET, and a second power source is connected to the drain side.
  • the first power source is a lithium ion battery
  • the second power source is a lead acid battery
  • the first MOSFET is connected in series with a second MOSFET,
  • the forward direction of the parasitic diode of the first MOSFET is opposite to the forward direction of the parasitic diode of the second MOSFET,
  • the first blocking unit includes at least the second MOSFET, It is preferable that the second blocking unit includes at least the first MOSFET.
  • the control unit When it is determined that an overcurrent flows through the first MOSFET and the second MOSFET, the control unit preferably turns off both the first MOSFET and the second MOSFET.
  • a lead storage battery is connected to the source side of the first MOSFET, and a lithium ion battery is connected to the source side of the second MOSFET.
  • the overcurrent interruption system it is possible to protect the first MOSFET by interrupting the overcurrent regardless of the direction in which the current flows.
  • the first MOSFET can be protected while using the relay and the first MOSFET.
  • the overcurrent interruption system according to the third aspect of the present invention, it is possible to prevent the noise of the relay and extend the life.
  • the overcurrent is interrupted while securing bidirectional power supply from the first power source and the second power source to the overcurrent interruption system.
  • the MOSFET can be protected.
  • the charging power can be kept long and the power can be used effectively. Moreover, the production cost of an overcurrent interruption system can be suppressed.
  • the overcurrent cutoff system it is possible to protect the first MOSFET while using the first MOSFET and the second MOSFET.
  • the overcurrent interruption system according to the seventh aspect of the present invention, it is possible to reliably protect the first MOSFET without having to determine in which direction the overcurrent flows.
  • the charging power can be kept long and the power can be used effectively. Moreover, the production cost of an overcurrent interruption system can be suppressed.
  • FIG. 5 is a sequence diagram illustrating an operation flow of a current value detection unit and a control unit in FIG. 4. It is a functional block diagram which shows schematic structure of the overcurrent interruption
  • FIG. 1 A solid line in FIG. 1 indicates a power line, and a broken line indicates an information transmission line.
  • the overcurrent interruption system 90 is mounted on a vehicle such as a hybrid vehicle (HEV vehicle), for example. It should be noted that the general configuration of the overcurrent interruption system 90 will be described, but other functions of the overcurrent interruption system 90 are not excluded.
  • HEV vehicle hybrid vehicle
  • the overcurrent interruption system 90 includes at least a MOSFET 3, a relay 4, a current value detection unit 5, and a control unit 6.
  • the overcurrent cutoff system 90 further includes, for example, a first power source 1, a second power source 2, an ECU 7 (Engine Control Unit), a switch control unit 8, a notification unit 9, a load 10, a rectifying element 11, an alternator 12, a starter 13, and the like. May be.
  • the MOSFET 3 corresponds to the first MOSFET of the present invention.
  • the first power source 1 is, for example, a lithium ion battery. By using a lithium ion battery, the charging power can be maintained longer than when other batteries are used, and the power can be used effectively.
  • the first power supply 1 may also be configured by connecting in series one or more secondary batteries (cells) other than lead storage batteries, such as lithium ion batteries and nickel metal hydride batteries. The positive terminal of the first power supply 1 is connected to the relay 4 and the negative terminal is connected to the ground.
  • the first power supply 1 supplies power to the overcurrent interruption system 90.
  • the first power supply 1 can supply power to the load 10 when the MOSFET 3 is on.
  • the first power supply 1 can also supply power to the auxiliary equipment, the ECU 7 and the like while the engine drive (idling) is stopped.
  • the first power supply 1 is connected in parallel with the second power supply 2.
  • the second power source 2 is, for example, a lead storage battery. By using a lead storage battery, the production cost of the overcurrent interruption system 90 can be suppressed compared to when other batteries are used.
  • the second power supply 2 may be the same voltage as the first power supply 1 or a different voltage, but if it is a different voltage, a DC / DC converter is used.
  • the positive terminal of the second power supply 2 is connected to the current value detector 5 and the like, and the negative terminal is connected to the ground.
  • the second power supply 2 supplies power to the overcurrent cutoff system 90.
  • the second power supply 2 can supply power to the load 10.
  • the second power supply 2 is connected in parallel with the first power supply 1.
  • the MOSFET 3 is a switching element that is electrically driven, and can be switched on and off under the control of the switch control unit 8.
  • a first power supply 1 is connected to the source side of the MOSFET 3, and a second power supply 2 is connected to the drain side.
  • a current flows between the relay 4 and the current value detector 5, and when the MOSFET 3 is off, no current flows between the relay 4 and the current value detector 5.
  • the number of MOSFETs 3 is not limited. A plurality of MOSFETs 3 may be connected in parallel. As the number of MOSFETs 3 increases, the power load can be distributed.
  • the MOSFET 3 also corresponds to the second blocking part of the present invention.
  • a resistor Ra is connected between the source and gate of the MOSFET 3. For this reason, the potential difference between the source and the gate can be suppressed. Further, a pre-gate resistor Rb is connected to the gate of the MOSFET 3. Thereby, the inrush current due to the parasitic capacitor can be prevented from flowing as a large current to the gate of the MOSFET 3.
  • the MOSFET 3 may be switched on and off as follows, for example. That is, the MOSFET 3 is turned on when the voltage of the second power source 2 falls below a predetermined value, thereby charging the second power source 2 from the alternator 12 or the first power source 1, and overdischarging the second power source 2. Provide protection. Further, the MOSFET 3 is turned off when the voltage of the second power source 2 exceeds another predetermined value, thereby preventing charging from the alternator 12 or the first power source 1 to the second power source 2. 2 overcharge protection.
  • the relay 4 can be switched on and off under the control of the control unit 6 via the ECU 7.
  • the relay 4 is connected to the source side of the MOSFET 3.
  • the relay 4 When the relay 4 is on, a current flows between the first power source 1 and the MOSFET 3, and when the relay 4 is off, no current flows between the first power source 1 and the MOSFET 3.
  • the relay 4 corresponds to the 1st interruption
  • the current value detection unit 5 includes, for example, a shunt resistor, a current sense amplifier, a voltage regulator, and the like. In FIG. 1, the current value detection unit 5 is connected to the drain side of the MOSFET 3, but the current value detection unit 5 may be connected to the source side of the MOSFET 3. The current value detection unit 5 detects the value of the current flowing through the MOSFET 3 by converting the potential difference of the shunt resistor into a current value by a current sense amplifier.
  • FIG. 2 is a graph showing the relationship between the current (horizontal axis) flowing through the MOSFET 3 in FIG. 1 and the voltage (vertical axis) applied to the current value detection unit 5.
  • a, b, c and d are positive constants.
  • the forward direction of the parasitic diode 31 of the MOSFET 3 in FIG. 1 (the direction from the MOSFET 3 to the second power supply 2) is the positive direction on the horizontal axis, and the opposite is the negative direction on the horizontal axis.
  • the current value detection unit 5 detects the current value, it outputs the detected current value to the control unit 6.
  • the control unit 6 is a processor such as a CPU (Central Processing Unit) that controls the overall operation of the overcurrent interruption system 90.
  • the control unit 6 can control the MOSFET 3 through the switch control unit 8 and can control the relay 4 through the ECU 7.
  • the control unit 6 compares the current value with an overcurrent threshold (the following first reference value and second reference value). Referring to FIG. 2, when the current value falls below the first reference value (-a [A] in the present embodiment) (current value ⁇ -a [A]), or the second reference value (present embodiment a [ A]) is exceeded (current value> a [A]), the controller 6 determines that an overcurrent has occurred.
  • a process executed by the control unit 6 when it is determined that an overcurrent has occurred will be described later.
  • the first transistor T1 and the second transistor T2 are switched on and off under the control of the control unit 6.
  • the first transistor T1 is a PNP transistor
  • the second transistor T2 is an NPN transistor.
  • the third transistor T3 is controlled by the ECU 7 by switching it on and off.
  • the third transistor T3 is a PNP transistor.
  • the ECU 7 can obtain a notification that the overcurrent has been detected from the control unit 6 and can output the notification to the notification unit 9 in order to notify the driver of the vehicle. Further, the ECU 7 can control ON / OFF of the relay 4.
  • the switch control unit 8 is supplied with power from at least one of the first power source 1 and the second power source 2 and can control the on / off of the MOSFET 3 under the control of the control unit 6. That is, even if the power supply from the second power supply 2 is interrupted for some reason, the switch control unit 8 can continue the control of turning on and off the MOSFET 3 by receiving the power supply from the first power supply 1.
  • the notification unit 9 When the notification unit 9 acquires a notification that an overcurrent has been detected from the control unit 6 via the ECU 7, the notification unit 9 notifies the driver of the vehicle to that effect. Specifically, the notification unit 9 notifies by turning on the lamp. As an alternative example, the notification unit 9 notifies that an overcurrent is detected and an abnormality has occurred in the system as a sound or as an image and outputs it to a vehicle-mounted monitor.
  • the load 10 is, for example, an audio, an air conditioner, a navigation system, or the like provided in the vehicle. One end of the load 10 is connected to the current value detection unit 5 and the second power supply 2, and the other end is connected to the ground.
  • the load 10 operates by receiving power supply from the first power supply 1 and the second power supply 2 while the engine drive is stopped, and receives power supply from the alternator 12, the first power supply 1 and the second power supply 2 while the engine is driven. Operate.
  • the rectifying element 11 is a diode and includes a first rectifying element 11a and a second rectifying element 11b.
  • the first rectifying element 11 a is provided between the first power supply 1 and the switch control unit 8 in a direction in which power is supplied from the first power supply 1 to the switch control unit 8.
  • the second rectifying element 11 b is provided between the second power supply 2 and the switch control unit 8 in a direction in which power is supplied from the second power supply 2 to the switch control unit 8.
  • each of the first rectifying element 11a and the second rectifying element 11b includes two elements, but the number thereof is not limited. The greater the number of elements, the higher the breakdown voltage. Further, for example, no current flows from the first power supply 1 to the second power supply 2 or from the second power supply 2 to the first power supply 1 from the rectifying element 11.
  • the alternator 12 is a generator and is mechanically connected to a vehicle engine.
  • the alternator 12 can generate electric power by driving the engine.
  • the power generated by the alternator 12 by driving the engine can be supplied to the first power source 1, the second power source 2, and the load 10 by adjusting the output voltage with a regulator.
  • the alternator 12 can generate power by regeneration when the vehicle is decelerated.
  • the electric power regenerated by the alternator 12 can be used for charging the first power supply 1 and the second power supply 2.
  • the starter 13 includes a cell motor, for example, and receives power supply from at least one of the first power source 1 and the second power source 2 to start the engine of the vehicle.
  • the overcurrent interruption system 90 of the present embodiment interrupts the overcurrent and protects the MOSFET 3.
  • the current value detection unit 5 detects the current value flowing through the MOSFET 3.
  • the current value detection unit 5 outputs the current value to the control unit 6.
  • the control unit 6 protects the MOSFET 3 from overcurrent as follows. That is, based on the current value, the control unit 6 determines whether or not an overcurrent is flowing and in which direction the overcurrent is flowing. When it is determined that the overcurrent is flowing in the forward direction of the parasitic diode 31 of the MOSFET 3, the control unit 6 turns off the relay 4. As a result, the overcurrent is cut off and does not flow through the MOSFET 3, so that the MOSFET 3 can be protected. In addition, the control unit 6 notifies the ECU 7 that an overcurrent is flowing. ECU7 which acquired the said notification notifies the alerting
  • the control unit 6 stops the output from the switch control unit 8 and turns off the MOSFET 3.
  • the control unit 6 may additionally disconnect the MOSFET 3 and the switch control unit 8 by turning off the first transistor T1 and the second transistor T2. As a result, the MOSFET 3 can be protected.
  • the control unit 6 maintains the state of the relay 4. That is, the control unit 6 remains on when the relay 4 is on, and remains off when the relay 4 is off. For this reason, the operation frequency of the relay 4 is lowered, so that the noise of the relay 4 can be prevented and the life of the relay 4 can be extended.
  • control unit 6 notifies the ECU 7 that an overcurrent is flowing.
  • ECU7 which acquired the said notification notifies the alerting
  • the notification unit 9 notifies warning information notifying the driver of the vehicle provided with the overcurrent cutoff system 90 of the abnormality.
  • control unit 6 When it is determined that no overcurrent is flowing (when it is determined that there is no abnormality), the control unit 6 turns on the MOSFET 3 and the relay 4 and continuously monitors (monitors) the current flowing through the MOSFET 3.
  • FIG. 3 is a sequence diagram showing an operation that the current value detection unit 5 and the control unit 6 in FIG. 1 execute regularly or irregularly.
  • the current value detection unit 5 detects the current value (step S1), and outputs the detected current value to the control unit 6 (step S2).
  • the control unit 6 that has acquired the current value determines whether or not the current value exceeds the second reference value (step S3).
  • the control unit 6 turns off the relay 4 (step S4) and notifies the ECU 7 that an overcurrent is flowing (step S5). Further, the control unit 6 notifies the driver of the vehicle via the notification unit 9 of warning information that informs that an overcurrent flows and an abnormality has occurred (step S6).
  • step S7 the control unit 6 determines whether or not the current value is lower than the first reference value.
  • step S7 the control unit 6 stops the output of the switch control unit 8 to turn off the MOSFET 3 (step S8), turns off the first transistor T1 and the second transistor T2, and removes the MOSFET 3 from the switch control unit 8. Disconnect (step S9).
  • step S5 the control unit 6 executes Step S5.
  • step S7 the controller 6 determines that no overcurrent is flowing, and turns on the MOSFET 3 and the relay 4 (step S10).
  • the controller 6 continuously monitors the current (Step S11).
  • the control unit 6 detects the overcurrent in the forward direction of the parasitic diode 31 of the MOSFET 3 based on the current detected by the current value detection unit 5. When it is determined that the current flows, the relay 4 is turned off. On the other hand, when it is determined that the overcurrent flows in the reverse direction of the parasitic diode 31 of the MOSFET 3, the MOSFET 3 is turned off. For this reason, it is possible to protect the MOSFET 3 by interrupting the overcurrent regardless of the direction in which the current flows.
  • the control unit 6 determines that the overcurrent flows in the reverse direction of the parasitic diode 31 of the MOSFET 3, the state of the relay 4 is maintained. To do. For this reason, noise prevention and life extension of the relay 4 can be achieved.
  • the first power source 1 is connected to the source side of the MOSFET 3 and the second power source 2 is connected to the drain side. For this reason, it is possible to protect the MOSFET 3 by interrupting the overcurrent while ensuring bidirectional power supply from the first power supply 1 and the second power supply 2 to the overcurrent cutoff system 90.
  • the first power supply 1 is a lithium ion battery and the second power supply 2 is a lead storage battery. Since a lithium ion battery is used for the first power source 1, it is possible to effectively use the power while maintaining the charging power longer than when using other batteries. Moreover, since a lead storage battery is used, the production cost of the overcurrent interruption system 90 can be suppressed compared with the case where another battery is used.
  • the overcurrent cutoff system 90 mounted on the hybrid vehicle has been described, but the present invention is not limited to this.
  • the overcurrent interruption system 90 may be mounted on an electric vehicle (EV vehicle).
  • the overcurrent interruption system 90 includes one MOSFET.
  • the overcurrent cutoff system 90 includes two MOSFETs as follows.
  • the overcurrent interruption system 90 includes at least a first MOSFET 3a, a second MOSFET 3b, a relay 4, a current value detection unit 5, and a control unit 6.
  • the overcurrent interruption system 90 may further include, for example, a first power supply 1, a second power supply 2, an ECU 7, a switch control unit 8, a notification unit 9, a load 10, a rectifying element 11, an alternator 12, a starter 13, and the like.
  • the first power supply 1 can supply power to the load 10 when the first MOSFET 3a and the second MOSFET 3b are turned on.
  • the first MOSFET 3 a and the second MOSFET 3 b are electrically driven switching elements, and can be switched on and off under the control of the switch control unit 8.
  • the first MOSFET 3a and the second MOSFET 3b in this embodiment are n-type.
  • the forward direction of the parasitic diode 31a of the first MOSFET 3a is opposite to the forward direction of the parasitic diode 31b of the second MOSFET 3b.
  • the forward direction of the parasitic diode 31a is the direction from the second power supply 2 to the first power supply 1
  • the forward direction of the parasitic diode 31b is the direction from the first power supply 1 to the second power supply 2.
  • the second MOSFET 3b corresponds to the first cutoff part of the present invention.
  • the first power supply 1 is connected to the source side of the second MOSFET 3b, the drain of the second MOSFET 3b and the drain of the first MOSFET 3a are connected, and the source side of the first MOSFET 3a is connected to the source side of the first MOSFET 3a.
  • a second power supply 2 is connected.
  • FIG. 4 shows two MOSFETs, but the number of MOSFETs is not limited. For example, another one or more MOSFETs may be connected in parallel with the first MOSFET 3a, and another one or more MOSFETs may be connected in parallel with the second MOSFET 3b. As the number of MOSFETs increases, the power load can be distributed.
  • a resistor Ra is connected between the source and gate of each of the first MOSFET 3a and the second MOSFET 3b. For this reason, the potential difference between the source and the gate can be suppressed. Further, a pre-gate resistor Rb is connected to the gates of the first MOSFET 3a and the second MOSFET 3b. Thereby, the inrush current due to the parasitic capacitor can be prevented from flowing as a large current to the gate of the first MOSFET 3a or the second MOSFET 3b.
  • the relay 4 is arbitrarily connected and can be switched on and off under the control of the control unit 6 via the ECU 7.
  • the relay 4 is connected to the source of the second MOSFET 3b.
  • the relay 4 When the relay 4 is on, a current flows between the first power source 1 and the second MOSFET 3b.
  • the relay 4 is off, no current flows between the first power source 1 and the second MOSFET 3b.
  • the current value detection unit 5 includes, for example, a shunt resistor, a current sense amplifier, a voltage regulator, and the like. In FIG. 4, the current value detector 5 is connected to the source of the first MOSFET 3a. As an alternative example, the current value detection unit 5 may be connected between the first MOSFET 3a and the second MOSFET 3b or the source of the second MOSFET 3b.
  • the control unit 6 is a processor such as a CPU (Central Processing Unit) that controls the entire operation of the overcurrent interruption system 90.
  • the control unit 6 can control the first MOSFET 3 a and the second MOSFET 3 b through the switch control unit 8, and can control the relay 4 and the notification unit 9 through the ECU 7.
  • CPU Central Processing Unit
  • the switch control unit 8 is supplied with power from at least one of the first power supply 1 and the second power supply 2, and can control the on / off of the first MOSFET 3a and the second MOSFET 3b by the control of the control unit 6. .
  • the overcurrent cutoff system 90 of the present embodiment cuts off the overcurrent and protects the first MOSFET 3a and the second MOSFET 3b.
  • the current value detector 5 detects the current value flowing through the first MOSFET 3a and the second MOSFET 3b.
  • the current value detection unit 5 outputs the detected current value to the control unit 6.
  • the control unit 6 determines whether or not an overcurrent is flowing based on the current value. When it is determined that the overcurrent is flowing, the controller 6 turns off both the first MOSFET 3a and the second MOSFET 3b as follows.
  • the control unit 6 stops the output from the switch control unit 8 to the first transistor T1. As a result, both the first MOSFET 3a and the second MOSFET 3b are turned off. Further, the control unit 6 may turn off both the first MOSFET 3a and the second MOSFET 3b by turning off the first transistor T1 and the second transistor T2 to cut (cut) the gate signal line. Thus, the first MOSFET 3a and the second MOSFET 3b can be reliably protected without having to determine in which direction the overcurrent flows.
  • control unit 6 notifies the ECU 7 that an overcurrent is flowing.
  • ECU7 which acquired the said notification notifies the alerting
  • the notification unit 9 notifies the driver of the vehicle provided with the overcurrent interruption system 90 of warning information (warning) for notifying abnormality.
  • control unit 6 When it is determined that no overcurrent is flowing (when it is determined that there is no abnormality), the control unit 6 turns on the first MOSFET 3a and the second MOSFET 3b, and the current flowing through the first MOSFET 3a and the second MOSFET 3b. Continue monitoring (monitoring).
  • FIG. 5 is a sequence diagram showing an operation that the current value detection unit 5 and the control unit 6 of FIG. 3 execute regularly or irregularly.
  • the current value detection unit 5 detects the current value (step S21), and outputs the detected current value to the control unit 6 (step S22).
  • the controller 6 that has acquired the current value determines whether or not an overcurrent is flowing based on the current value (step S23).
  • the control unit 6 turns off the first MOSFET 3a and the second MOSFET 3b by stopping the output from the switch control unit 8 to the first transistor T1 (step S24). Further, the control unit 6 turns off the first transistor T1 and the second transistor T2, and disconnects the gate signal line from the first MOSFET 3a and the second MOSFET 3b to the switch control unit 8 (step S25). Thereby, the control unit 6 may turn off the first MOSFET 3a and the second MOSFET 3b.
  • the control unit 6 notifies the ECU 7 that an overcurrent is flowing (step S26). Moreover, the control part 6 notifies the warning information which notifies that the overcurrent flows and abnormality has generate
  • step S23 the control unit 6 determines that no overcurrent is flowing, and turns on the first MOSFET 3a and the second MOSFET 3b (step S28).
  • step S28 The controller 6 continuously monitors the current (Step S29).
  • the first MOSFET 3a and the second MOSFET 3b are connected in series.
  • the forward direction of the parasitic diode 31a of the first MOSFET 3a is opposite to the forward direction of the parasitic diode 31b of the second MOSFET 3b.
  • the control unit 6 turns off both the first MOSFET 3a and the second MOSFET 3b. For this reason, regardless of the direction in which the overcurrent flows, the overcurrent can be cut off, and the first MOSFET 3a and the second MOSFET 3b can be reliably protected. Further, there is no need to determine in which direction the overcurrent flows.
  • a lead storage battery is connected to the source side of the first MOSFET 3a. For this reason, the production cost of the overcurrent interruption system 90 can be suppressed compared with the case where another battery is used.
  • a lithium ion battery is connected to the source side of the second MOSFET 3b. For this reason, compared with the case where another battery is used, charging power can be kept longer and the power can be used effectively.
  • the first MOSFET 3a and the second MOSFET 3b are connected in this order in the direction from the first power supply 1 to the second power supply 2.
  • the order of the connection is reversed. Also good.
  • both the first MOSFET 3a and the second MOSFET 3b are n-type, but both may be p-type.
  • the control unit 6 when it is determined that the overcurrent is flowing, the control unit 6 turns off both the first MOSFET 3a and the second MOSFET 3b.
  • the control unit 6 controls the first MOSFET 3a and the second MOSFET 3b separately. Specifically, when it is determined that the overcurrent is flowing, the control unit 6 selects the MOSFET having the parasitic diode that is opposite to the overcurrent from the first MOSFET 3a and the second MOSFET 3b. Turn off at least to shut off overcurrent.
  • the third embodiment will be described in detail. In the third embodiment, the description overlapping that of the first or second embodiment is omitted.
  • a third transistor T3 and a fourth transistor T4 are further connected to the control unit 6 and the switch control unit 8.
  • the third transistor T3 and the fourth transistor T4 are a PNP transistor and an NPN transistor, respectively, but are not limited thereto.
  • the control unit 6 stops the output from the switch control unit 8 to the first transistor T1.
  • the first MOSFET 3a is turned off.
  • the control unit 6 may turn off at least the first MOSFET 3a by turning off the first transistor T1 and the second transistor T2 and disconnecting the gate signal line.
  • the control unit 6 stops the output from the switch control unit 8 to the third transistor T3. As a result, the second MOSFET 3b is turned off.
  • the control unit 6 may turn off at least the second MOSFET 3b by turning off the third transistor T3 and the fourth transistor T4 to cut off the gate signal line.
  • the control unit 6 turns off at least one of the first MOSFET 3a and the second MOSFET 3b that has a parasitic diode that is opposite to the overcurrent. Cut off the overcurrent. For this reason, the operation of the first MOSFET 3a or the second MOSFET 3b can be minimized.

Abstract

In order to protect a MOSFET by cutting off overcurrent regardless of the direction in which the current flows, this overcurrent cutoff system (90) is configured to have: a first MOSFET (3, 3a); a current value detection unit (5) that detects a value for a current that flows through the first MOSFET; a first cutoff unit (3b, 4) that cuts off an overcurrent flowing in the forward direction of parasitic diodes (31, 31a) of the first MOSFET in an off state; a second cutoff unit (3, 3a) that cuts off an overcurrent flowing in the reverse direction of the parasitic diodes of the first MOSFET in an off state, and a control unit (6) with which switching between the first cutoff unit and the second cutoff unit can be controlled. On the basis of the detected current, the control unit switches the first cutoff unit off when an overcurrent is determined to be flowing in the forward direction of the parasitic diodes of the first MOSFET, and switches the second cutoff unit off when an overcurrent is determined to be flowing in the reverse direction of the parasitic diodes of the first MOSFET.

Description

過電流遮断システムOvercurrent interrupt system 関連出願へのクロスリファレンスCross-reference to related applications
　本出願は、日本国特許出願２０１５－２５６１１２号（２０１５年１２月２８日出願）及び日本国特許出願２０１６－１３６８９４号（２０１６年７月１１日出願）の優先権を主張するものであり、当該出願の開示全体を、ここに参照のために取り込む。 This application claims priority of Japanese Patent Application No. 2015-256112 (filed on Dec. 28, 2015) and Japanese Patent Application No. 2016-136894 (filed on Jul. 11, 2016). The entire disclosure of the application is hereby incorporated by reference.
　本発明は過電流遮断システムに関する。 The present invention relates to an overcurrent interruption system.
　従来から、１つのバッテリを有し、シャント抵抗に過電流が流れたときにＭＯＳＦＥＴ（Metal Oxide Semiconductor Field Effect Transistor）をオフにして過電流を遮断する過電流遮断回路が知られている（例えば特許文献１）。 2. Description of the Related Art Conventionally, an overcurrent cutoff circuit is known that has one battery and shuts off the overcurrent by turning off a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) when an overcurrent flows through a shunt resistor (for example, a patent) Reference 1).
特開平１０－３３６８８６号公報Japanese Patent Laid-Open No. 10-336886
　上記過電流遮断回路は１つのバッテリのみを有するため、電流は片方向にしか流れ得ない。そのため、ＭＯＳＦＥＴのオン又はオフを切り替えるだけで過電流を遮断することができる。しかしながら、上記過電流遮断回路が２つのバッテリを有し、上記片方向とは逆方向の過電流が流れたとき、過電流を遮断することができない。このためＭＯＳＦＥＴを保護することができない。 ∙ Since the overcurrent cutoff circuit has only one battery, current can only flow in one direction. Therefore, overcurrent can be interrupted simply by switching on or off the MOSFET. However, when the overcurrent interrupt circuit has two batteries and an overcurrent in the direction opposite to the one direction flows, the overcurrent cannot be interrupted. For this reason, the MOSFET cannot be protected.
　かかる事情に鑑みてなされた本発明の目的は、電流が流れる方向にかかわらず過電流を遮断しＭＯＳＦＥＴを保護することができる過電流遮断システムを提供する。 An object of the present invention made in view of such circumstances is to provide an overcurrent interruption system capable of interrupting overcurrent and protecting a MOSFET regardless of the direction in which the current flows.
　上記課題を解決するために本発明の第１の観点に係る過電流遮断システムは、
　第１のＭＯＳＦＥＴと、
　前記第１のＭＯＳＦＥＴを流れる電流の値を検出する電流値検出部と、
　オンオフ状態を切替可能であり、オフ状態において前記第１のＭＯＳＦＥＴの寄生ダイオードの順方向に流れる過電流を遮断する第１の遮断部と、
　オンオフ状態を切替可能であり、オフ状態において前記第１のＭＯＳＦＥＴの寄生ダイオードの逆方向に流れる過電流を遮断する第２の遮断部と、
　前記第１の遮断部と前記第２の遮断部とを切替制御可能な制御部とを有し、
　前記制御部は、前記電流値検出部によって検出された電流に基づいて、前記第１のＭＯＳＦＥＴの寄生ダイオードの順方向に過電流が流れていると判定したとき、前記第１の遮断部をオフにし、前記第１のＭＯＳＦＥＴの前記寄生ダイオードの逆方向に過電流が流れていると判定したとき、前記第２の遮断部をオフにする。 In order to solve the above-mentioned problem, an overcurrent interruption system according to the first aspect of the present invention includes:
A first MOSFET;
A current value detection unit for detecting a value of a current flowing through the first MOSFET;
A first cut-off unit that can be switched between an on-off state and cuts off an overcurrent flowing in a forward direction of the parasitic diode of the first MOSFET in the off-state;
A second shut-off unit that can be switched between an on-off state and shuts off an overcurrent that flows in the reverse direction of the parasitic diode of the first MOSFET in the off-state;
A control unit capable of switching and controlling the first blocking unit and the second blocking unit;
When the controller determines that an overcurrent is flowing in the forward direction of the parasitic diode of the first MOSFET based on the current detected by the current value detector, the controller turns off the first interrupter. Then, when it is determined that an overcurrent flows in the opposite direction of the parasitic diode of the first MOSFET, the second cutoff unit is turned off.
　上記課題を解決するために本発明の第２の観点に係る過電流遮断システムにおいて、
　前記第１の遮断部は、前記第１のＭＯＳＦＥＴのソース側に接続されたリレーを含み、
　前記第２の遮断部は、前記第１のＭＯＳＦＥＴを含むことが好ましい。 In order to solve the above problem, in the overcurrent interruption system according to the second aspect of the present invention,
The first cutoff unit includes a relay connected to the source side of the first MOSFET,
It is preferable that the second blocking unit includes the first MOSFET.
　上記課題を解決するために本発明の第３の観点に係る過電流遮断システムにおいて、
　前記制御部は、前記第１のＭＯＳＦＥＴの前記寄生ダイオードの逆方向に過電流が流れていると判定したとき、前記リレーの状態を維持することが好ましい。 In order to solve the above problem, in the overcurrent interruption system according to the third aspect of the present invention,
When the control unit determines that an overcurrent flows in the reverse direction of the parasitic diode of the first MOSFET, the control unit preferably maintains the state of the relay.
　上記課題を解決するために本発明の第４の観点に係る過電流遮断システムにおいて、
　前記第１のＭＯＳＦＥＴのソース側には第１電源が接続され、ドレイン側には第２電源が接続されることが好ましい。 In order to solve the above problem, in the overcurrent interruption system according to the fourth aspect of the present invention,
Preferably, a first power source is connected to the source side of the first MOSFET, and a second power source is connected to the drain side.
　上記課題を解決するために本発明の第５の観点に係る過電流遮断システムにおいて、
　前記第１電源はリチウムイオン電池であり、前記第２電源は鉛蓄電池であることが好ましい。 In order to solve the above problem, in the overcurrent interruption system according to the fifth aspect of the present invention,
Preferably, the first power source is a lithium ion battery, and the second power source is a lead acid battery.
　上記課題を解決するために本発明の第６の観点に係る過電流遮断システムにおいて、
　前記第１のＭＯＳＦＥＴは、第２のＭＯＳＦＥＴと直列に接続され、
　前記第１のＭＯＳＦＥＴの寄生ダイオードの順方向は、前記第２のＭＯＳＦＥＴの寄生ダイオードの順方向とは逆方向であり、
　前記第１の遮断部は、少なくとも前記第２のＭＯＳＦＥＴを含み、
　前記第２の遮断部は、少なくとも前記第１のＭＯＳＦＥＴを含むことが好ましい。 In order to solve the above problem, in the overcurrent interruption system according to the sixth aspect of the present invention,
The first MOSFET is connected in series with a second MOSFET,
The forward direction of the parasitic diode of the first MOSFET is opposite to the forward direction of the parasitic diode of the second MOSFET,
The first blocking unit includes at least the second MOSFET,
It is preferable that the second blocking unit includes at least the first MOSFET.
　上記課題を解決するために本発明の第７の観点に係る過電流遮断システムにおいて、
　前記制御部は、前記第１のＭＯＳＦＥＴ及び前記第２のＭＯＳＦＥＴに過電流が流れていると判定したとき、前記第１のＭＯＳＦＥＴ及び前記第２のＭＯＳＦＥＴの両方をオフにすることが好ましい。 In order to solve the above problem, in the overcurrent interruption system according to the seventh aspect of the present invention,
When it is determined that an overcurrent flows through the first MOSFET and the second MOSFET, the control unit preferably turns off both the first MOSFET and the second MOSFET.
　上記課題を解決するために本発明の第８の観点に係る過電流遮断システムにおいて、
　前記第１のＭＯＳＦＥＴのソース側には鉛蓄電池が接続され、前記第２のＭＯＳＦＥＴのソース側にはリチウムイオン電池が接続されることが好ましい。 In order to solve the above problem, in the overcurrent interruption system according to the eighth aspect of the present invention,
Preferably, a lead storage battery is connected to the source side of the first MOSFET, and a lithium ion battery is connected to the source side of the second MOSFET.
　本発明の第１の観点に係る過電流遮断システムによれば、電流が流れる方向にかかわらず過電流を遮断し第１のＭＯＳＦＥＴを保護することができる。 According to the overcurrent interruption system according to the first aspect of the present invention, it is possible to protect the first MOSFET by interrupting the overcurrent regardless of the direction in which the current flows.
　本発明の第２の観点に係る過電流遮断システムによれば、リレー及び第１のＭＯＳＦＥＴを利用しつつ、第１のＭＯＳＦＥＴを保護することができる。 According to the overcurrent cutoff system according to the second aspect of the present invention, the first MOSFET can be protected while using the relay and the first MOSFET.
　本発明の第３の観点に係る過電流遮断システムによれば、リレーの騒音防止及び長寿命化を図ることができる。 According to the overcurrent interruption system according to the third aspect of the present invention, it is possible to prevent the noise of the relay and extend the life.
　本発明の第４の観点に係る過電流遮断システムによれば、第１電源及び第２電源から過電流遮断システムへの双方向の電力供給を確保しつつも過電流を遮断して第１のＭＯＳＦＥＴを保護することができる。 According to the overcurrent interruption system according to the fourth aspect of the present invention, the overcurrent is interrupted while securing bidirectional power supply from the first power source and the second power source to the overcurrent interruption system. The MOSFET can be protected.
　本発明の第５の観点に係る過電流遮断システムによれば、充電電力を長く保持して電力を有効利用することができる。また、過電流遮断システムの生産コストを抑制することができる。 According to the overcurrent interruption system according to the fifth aspect of the present invention, the charging power can be kept long and the power can be used effectively. Moreover, the production cost of an overcurrent interruption system can be suppressed.
　本発明の第６の観点に係る過電流遮断システムによれば、第１のＭＯＳＦＥＴ及び第２のＭＯＳＦＥＴを利用しつつ、第１のＭＯＳＦＥＴを保護することができる。 According to the overcurrent cutoff system according to the sixth aspect of the present invention, it is possible to protect the first MOSFET while using the first MOSFET and the second MOSFET.
　本発明の第７の観点に係る過電流遮断システムによれば、過電流がどちらの方向に流れているかを判定する必要無く、確実に第１のＭＯＳＦＥＴを保護することができる。 According to the overcurrent interruption system according to the seventh aspect of the present invention, it is possible to reliably protect the first MOSFET without having to determine in which direction the overcurrent flows.
　本発明の第８の観点に係る過電流遮断システムによれば、充電電力を長く保持して電力を有効利用することができる。また、過電流遮断システムの生産コストを抑制することができる。 According to the overcurrent interruption system according to the eighth aspect of the present invention, the charging power can be kept long and the power can be used effectively. Moreover, the production cost of an overcurrent interruption system can be suppressed.
本発明の実施形態１に係る過電流遮断システムの概略構成を示す機能ブロック図である。It is a functional block diagram which shows schematic structure of the overcurrent interruption | blocking system which concerns on Embodiment 1 of this invention. 図１のＭＯＳＦＥＴを流れる電流と電圧との関係を示すグラフである。It is a graph which shows the relationship between the electric current and voltage which flow through MOSFET of FIG. 図１の電流値検出部及び制御部の動作フローを示すシーケンス図である。It is a sequence diagram which shows the operation | movement flow of the electric current value detection part and control part of FIG. 本発明の実施形態２に係る過電流遮断システムの概略構成を示す機能ブロッ図である。It is a functional block diagram which shows schematic structure of the overcurrent interruption | blocking system which concerns on Embodiment 2 of this invention. 図４の電流値検出部及び制御部の動作フローを示すシーケンス図である。FIG. 5 is a sequence diagram illustrating an operation flow of a current value detection unit and a control unit in FIG. 4. 本発明の実施形態３に係る過電流遮断システムの概略構成を示す機能ブロック図である。It is a functional block diagram which shows schematic structure of the overcurrent interruption | blocking system which concerns on Embodiment 3 of this invention.
［実施形態１］
　はじめに図１を参照して、本発明の実施形態１に係る過電流遮断システム９０の概略構成を説明する。図１の実線は電力ラインを示し、破線は情報伝達ラインを示す。過電流遮断システム９０は、例えばハイブリッド車（ＨＥＶ車）等の車両に搭載される。過電流遮断システム９０の概略構成を説明するが、過電流遮断システム９０の他の機能を排除したものではないことに留意されたい。 [Embodiment 1]
First, a schematic configuration of an overcurrent interruption system 90 according to Embodiment 1 of the present invention will be described with reference to FIG. A solid line in FIG. 1 indicates a power line, and a broken line indicates an information transmission line. The overcurrent interruption system 90 is mounted on a vehicle such as a hybrid vehicle (HEV vehicle), for example. It should be noted that the general configuration of the overcurrent interruption system 90 will be described, but other functions of the overcurrent interruption system 90 are not excluded.
　過電流遮断システム９０は、少なくともＭＯＳＦＥＴ３、リレー４、電流値検出部５及び制御部６を有する。過電流遮断システム９０は例えば、第１電源１、第２電源２、ＥＣＵ７（Ｅｎｇｉｎｅ　Ｃｏｎｔｒｏｌ　Ｕｎｉｔ）、スイッチ制御部８、報知部９、負荷１０、整流素子１１、オルタネータ１２及びスタータ１３等をさらに有してもよい。なお、ＭＯＳＦＥＴ３は、本発明の第１のＭＯＳＦＥＴに対応する。 The overcurrent interruption system 90 includes at least a MOSFET 3, a relay 4, a current value detection unit 5, and a control unit 6. The overcurrent cutoff system 90 further includes, for example, a first power source 1, a second power source 2, an ECU 7 (Engine Control Unit), a switch control unit 8, a notification unit 9, a load 10, a rectifying element 11, an alternator 12, a starter 13, and the like. May be. The MOSFET 3 corresponds to the first MOSFET of the present invention.
　第１電源１は例えばリチウムイオン電池である。リチウムイオン電池を用いることで、それ以外の電池を用いるときに比べて充電電力を長く保持して電力を有効利用することができる。第１電源１はまた、リチウムイオン電池やニッケル水素電池等、鉛蓄電池以外の１以上の二次電池（セル）が直列に接続されて構成されてもよい。第１電源１のプラス端子はリレー４と接続され、マイナス端子はグランドに接続される。 The first power source 1 is, for example, a lithium ion battery. By using a lithium ion battery, the charging power can be maintained longer than when other batteries are used, and the power can be used effectively. The first power supply 1 may also be configured by connecting in series one or more secondary batteries (cells) other than lead storage batteries, such as lithium ion batteries and nickel metal hydride batteries. The positive terminal of the first power supply 1 is connected to the relay 4 and the negative terminal is connected to the ground.
　第１電源１は過電流遮断システム９０に電力を供給する。第１電源１はＭＯＳＦＥＴ３がオンになっているとき、負荷１０に対して電力を供給可能である。第１電源１はまた、エンジン駆動（アイドリング）の停止中に、補機及びＥＣＵ７等に対して電力を供給可能である。第１電源１は第２電源２と並列接続される。 The first power supply 1 supplies power to the overcurrent interruption system 90. The first power supply 1 can supply power to the load 10 when the MOSFET 3 is on. The first power supply 1 can also supply power to the auxiliary equipment, the ECU 7 and the like while the engine drive (idling) is stopped. The first power supply 1 is connected in parallel with the second power supply 2.
　第２電源２は、例えば鉛蓄電池である。鉛蓄電池を用いることで、それ以外の電池を用いるときに比べて過電流遮断システム９０の生産コストを抑制することができる。第２電源２は第１電源１と同じ電圧であっても異なる電圧であってもよいが、異なる電圧である場合はＤＣ／ＤＣコンバータを用いる。第２電源２のプラス端子は電流値検出部５等に接続され、マイナス端子はグランドに接続される。 The second power source 2 is, for example, a lead storage battery. By using a lead storage battery, the production cost of the overcurrent interruption system 90 can be suppressed compared to when other batteries are used. The second power supply 2 may be the same voltage as the first power supply 1 or a different voltage, but if it is a different voltage, a DC / DC converter is used. The positive terminal of the second power supply 2 is connected to the current value detector 5 and the like, and the negative terminal is connected to the ground.
　第２電源２は過電流遮断システム９０に電力を供給する。第２電源２は、負荷１０に対して電力を供給可能である。第２電源２は第１電源１と並列接続される。 The second power supply 2 supplies power to the overcurrent cutoff system 90. The second power supply 2 can supply power to the load 10. The second power supply 2 is connected in parallel with the first power supply 1.
　ＭＯＳＦＥＴ３は、電気駆動するスイッチング素子であり、スイッチ制御部８の制御によってオンとオフとを切替可能である。ＭＯＳＦＥＴ３のソース側には第１電源１が接続され、ドレイン側には第２電源２が接続される。ＭＯＳＦＥＴ３がオンのときリレー４と電流値検出部５との間には電流が流れ、ＭＯＳＦＥＴ３がオフのときリレー４と電流値検出部５との間には電流が流れない。ＭＯＳＦＥＴ３の数は限定されない。ＭＯＳＦＥＴ３は並列に複数接続されてもよい。ＭＯＳＦＥＴ３の数が多いほど、電力負荷を分散することが可能である。なお、ＭＯＳＦＥＴ３は、本発明の第２の遮断部にも対応する。 The MOSFET 3 is a switching element that is electrically driven, and can be switched on and off under the control of the switch control unit 8. A first power supply 1 is connected to the source side of the MOSFET 3, and a second power supply 2 is connected to the drain side. When the MOSFET 3 is on, a current flows between the relay 4 and the current value detector 5, and when the MOSFET 3 is off, no current flows between the relay 4 and the current value detector 5. The number of MOSFETs 3 is not limited. A plurality of MOSFETs 3 may be connected in parallel. As the number of MOSFETs 3 increases, the power load can be distributed. The MOSFET 3 also corresponds to the second blocking part of the present invention.
　ＭＯＳＦＥＴ３のソースとゲートとの間には抵抗Ｒａが接続される。このためソースとゲートとの間の電位差を抑制することができる。また、ＭＯＳＦＥＴ３のゲートには、ゲート前抵抗Ｒｂが接続される。これにより、寄生キャパシタによる突入電流がＭＯＳＦＥＴ３のゲートに大電流として流れることを防ぐことができる。 A resistor Ra is connected between the source and gate of the MOSFET 3. For this reason, the potential difference between the source and the gate can be suppressed. Further, a pre-gate resistor Rb is connected to the gate of the MOSFET 3. Thereby, the inrush current due to the parasitic capacitor can be prevented from flowing as a large current to the gate of the MOSFET 3.
　ＭＯＳＦＥＴ３は、例えば以下のようにオンとオフとを切り替えられてもよい。すなわち、ＭＯＳＦＥＴ３は、第２電源２の電圧が所定値を下回ったときにオンになることによって、オルタネータ１２又は第１電源１から第２電源２への充電を行い、第２電源２の過放電保護を行う。またＭＯＳＦＥＴ３は、第２電源２の電圧が別の所定値を上回ったときにオフになることによって、オルタネータ１２又は第１電源１から第２電源２へ充電が行われることを防ぎ、第２電源２の過充電保護を行う。 The MOSFET 3 may be switched on and off as follows, for example. That is, the MOSFET 3 is turned on when the voltage of the second power source 2 falls below a predetermined value, thereby charging the second power source 2 from the alternator 12 or the first power source 1, and overdischarging the second power source 2. Provide protection. Further, the MOSFET 3 is turned off when the voltage of the second power source 2 exceeds another predetermined value, thereby preventing charging from the alternator 12 or the first power source 1 to the second power source 2. 2 overcharge protection.
　ＭＯＳＦＥＴ３は、スイッチ制御部８の制御によってオンになるため、このときオルタネータ１２又は第１電源１等から負荷１０への電力供給を確保することができる。 Since the MOSFET 3 is turned on by the control of the switch control unit 8, at this time, it is possible to ensure power supply from the alternator 12 or the first power source 1 to the load 10.
　リレー４は、ＥＣＵ７を介した制御部６の制御によってオンとオフとを切替可能である。本実施形態においてリレー４はＭＯＳＦＥＴ３のソース側に接続される。リレー４がオンのとき第１電源１とＭＯＳＦＥＴ３との間には電流が流れ、リレー４がオフのとき第１電源１とＭＯＳＦＥＴ３との間には電流が流れない。なお、リレー４は、本発明の第１の遮断部に対応する。 The relay 4 can be switched on and off under the control of the control unit 6 via the ECU 7. In the present embodiment, the relay 4 is connected to the source side of the MOSFET 3. When the relay 4 is on, a current flows between the first power source 1 and the MOSFET 3, and when the relay 4 is off, no current flows between the first power source 1 and the MOSFET 3. In addition, the relay 4 corresponds to the 1st interruption | blocking part of this invention.
　電流値検出部５は、例えばシャント抵抗、電流センスアンプ、電圧レギュレータ等により構成される。図１において電流値検出部５はＭＯＳＦＥＴ３のドレイン側に接続されているが、電流値検出部５はＭＯＳＦＥＴ３のソース側に接続されていてもよい。電流値検出部５はシャント抵抗の電位差を電流センスアンプにて電流値に変換することによって、ＭＯＳＦＥＴ３を流れる電流の値を検出する。 The current value detection unit 5 includes, for example, a shunt resistor, a current sense amplifier, a voltage regulator, and the like. In FIG. 1, the current value detection unit 5 is connected to the drain side of the MOSFET 3, but the current value detection unit 5 may be connected to the source side of the MOSFET 3. The current value detection unit 5 detects the value of the current flowing through the MOSFET 3 by converting the potential difference of the shunt resistor into a current value by a current sense amplifier.
　図２は図１のＭＯＳＦＥＴ３を流れる電流（横軸）と、電流値検出部５にかかる電圧（縦軸）との関係を示すグラフである。図２に示すａ、ｂ、ｃ及びｄは正の定数である。図１のＭＯＳＦＥＴ３の寄生ダイオード３１の順方向（ＭＯＳＦＥＴ３から第２電源２への方向）を横軸のプラス方向とし、その逆を横軸のマイナス方向とする。図２に示すように、電圧がｄ［Ｖ］のとき寄生ダイオード３１の順方向にａ［Ａ］の電流が流れ、電圧がｂ［Ｖ］のとき寄生ダイオード３１の逆方向に－ａ［Ａ］の電流が流れる。電流値検出部５は電流値を検出すると、検出した電流値を制御部６に出力する。 FIG. 2 is a graph showing the relationship between the current (horizontal axis) flowing through the MOSFET 3 in FIG. 1 and the voltage (vertical axis) applied to the current value detection unit 5. In FIG. 2, a, b, c and d are positive constants. The forward direction of the parasitic diode 31 of the MOSFET 3 in FIG. 1 (the direction from the MOSFET 3 to the second power supply 2) is the positive direction on the horizontal axis, and the opposite is the negative direction on the horizontal axis. As shown in FIG. 2, when the voltage is d [V], a current [A] flows in the forward direction of the parasitic diode 31, and when the voltage is b [V], -a [A] ] Current flows. When the current value detection unit 5 detects the current value, it outputs the detected current value to the control unit 6.
　図１の説明に戻る。制御部６は過電流遮断システム９０の動作全体を制御するＣＰＵ（Central Processing Unit）等のプロセッサである。制御部６はスイッチ制御部８を介してＭＯＳＦＥＴ３を制御可能であり、ＥＣＵ７を介してリレー４を制御可能である。制御部６は電流値を電流値検出部５から取得すると、当該電流値と過電流閾値（以下の第１基準値及び第２基準値）とを比較する。図２を参照するに、電流値が第１基準値（本実施形態では－ａ［Ａ］）を下回る（電流値＜－ａ［Ａ］）とき、又は第２基準値（本実施形態ａ［Ａ］）を上回る（電流値＞ａ［Ａ］）ときに過電流が発生していると制御部６は判定する。過電流が発生していると判定したときに制御部６が実行する処理は後述する。 Returning to the explanation of FIG. The control unit 6 is a processor such as a CPU (Central Processing Unit) that controls the overall operation of the overcurrent interruption system 90. The control unit 6 can control the MOSFET 3 through the switch control unit 8 and can control the relay 4 through the ECU 7. When the control unit 6 acquires the current value from the current value detection unit 5, the control unit 6 compares the current value with an overcurrent threshold (the following first reference value and second reference value). Referring to FIG. 2, when the current value falls below the first reference value (-a [A] in the present embodiment) (current value <-a [A]), or the second reference value (present embodiment a [ A]) is exceeded (current value> a [A]), the controller 6 determines that an overcurrent has occurred. A process executed by the control unit 6 when it is determined that an overcurrent has occurred will be described later.
　第１トランジスタＴ１及び第２トランジスタＴ２は制御部６の制御によりオンとオフとを切替制御される。第１トランジスタＴ１はＰＮＰ型トランジスタであり、第２トランジスタＴ２はＮＰＮ型トランジスタである。また、第３トランジスタＴ３はＥＣＵ７によりオンとオフとを切り替えて制御される。第３トランジスタＴ３はＰＮＰ型トランジスタである。 The first transistor T1 and the second transistor T2 are switched on and off under the control of the control unit 6. The first transistor T1 is a PNP transistor, and the second transistor T2 is an NPN transistor. The third transistor T3 is controlled by the ECU 7 by switching it on and off. The third transistor T3 is a PNP transistor.
　ＥＣＵ７は、過電流を検出したことの通知を制御部６から取得し、車両のドライバに通知するために当該通知を報知部９に出力可能である。またＥＣＵ７は、リレー４のオンとオフとを制御可能である。 The ECU 7 can obtain a notification that the overcurrent has been detected from the control unit 6 and can output the notification to the notification unit 9 in order to notify the driver of the vehicle. Further, the ECU 7 can control ON / OFF of the relay 4.
　スイッチ制御部８は、第１電源１と第２電源２との少なくとも一方から電力供給を受け、制御部６の制御によりＭＯＳＦＥＴ３のオンとオフとを制御可能である。すなわち、第２電源２からの電力供給が何らかの理由で途絶えたとしても、スイッチ制御部８は第１電源１から電力供給を受けることでＭＯＳＦＥＴ３のオンとオフとの制御を継続することができる。 The switch control unit 8 is supplied with power from at least one of the first power source 1 and the second power source 2 and can control the on / off of the MOSFET 3 under the control of the control unit 6. That is, even if the power supply from the second power supply 2 is interrupted for some reason, the switch control unit 8 can continue the control of turning on and off the MOSFET 3 by receiving the power supply from the first power supply 1.
　報知部９は、過電流を検出したことの通知を制御部６からＥＣＵ７を介して取得すると、その旨を車両のドライバに通知する。具体的には報知部９は、ランプを点灯させることで通知する。代替例として報知部９は、過電流が検出されシステムに異常が生じていることを、音声として通知し又は画像として車載のモニタに出力して通知する。 When the notification unit 9 acquires a notification that an overcurrent has been detected from the control unit 6 via the ECU 7, the notification unit 9 notifies the driver of the vehicle to that effect. Specifically, the notification unit 9 notifies by turning on the lamp. As an alternative example, the notification unit 9 notifies that an overcurrent is detected and an abnormality has occurred in the system as a sound or as an image and outputs it to a vehicle-mounted monitor.
　負荷１０は、例えば車両に備えられたオーディオ、エアコン及びナビゲーションシステム等である。負荷１０の一端は電流値検出部５及び第２電源２に接続され、もう一端はグランドに接続される。負荷１０は、エンジン駆動の停止中に第１電源１及び第２電源２から電力供給を受けて動作し、エンジン駆動中にオルタネータ１２、第１電源１及び第２電源２から電力供給を受けて動作する。 The load 10 is, for example, an audio, an air conditioner, a navigation system, or the like provided in the vehicle. One end of the load 10 is connected to the current value detection unit 5 and the second power supply 2, and the other end is connected to the ground. The load 10 operates by receiving power supply from the first power supply 1 and the second power supply 2 while the engine drive is stopped, and receives power supply from the alternator 12, the first power supply 1 and the second power supply 2 while the engine is driven. Operate.
　整流素子１１はダイオードであり第１整流素子１１ａと第２整流素子１１ｂとを有する。第１整流素子１１ａは第１電源１からスイッチ制御部８に電力が供給される向きで第１電源１とスイッチ制御部８との間に設けられる。第２整流素子１１ｂは、第２電源２からスイッチ制御部８に電力が供給される向きで第２電源２とスイッチ制御部８との間に設けられる。図１において第１整流素子１１ａ及び第２整流素子１１ｂはいずれも２つの素子からなっているが、その数は限定されない。素子の数が多いほど、耐圧を上げることが可能である。また整流素子１１より、例えば第１電源１から第２電源２に、又は第２電源２から第１電源１に電流が流れ込むことがない。 The rectifying element 11 is a diode and includes a first rectifying element 11a and a second rectifying element 11b. The first rectifying element 11 a is provided between the first power supply 1 and the switch control unit 8 in a direction in which power is supplied from the first power supply 1 to the switch control unit 8. The second rectifying element 11 b is provided between the second power supply 2 and the switch control unit 8 in a direction in which power is supplied from the second power supply 2 to the switch control unit 8. In FIG. 1, each of the first rectifying element 11a and the second rectifying element 11b includes two elements, but the number thereof is not limited. The greater the number of elements, the higher the breakdown voltage. Further, for example, no current flows from the first power supply 1 to the second power supply 2 or from the second power supply 2 to the first power supply 1 from the rectifying element 11.
　オルタネータ１２は、発電機であって、車両のエンジンに機械的に接続される。オルタネータ１２は、エンジンの駆動によって発電可能である。オルタネータ１２がエンジンの駆動によって発電した電力は、レギュレータで出力電圧を調整されて、第１電源１、第２電源２及び負荷１０に供給され得る。またオルタネータ１２は、車両の減速時等に回生によって発電可能である。オルタネータ１２が回生発電した電力は、第１電源１及び第２電源２の充電に使用され得る。 The alternator 12 is a generator and is mechanically connected to a vehicle engine. The alternator 12 can generate electric power by driving the engine. The power generated by the alternator 12 by driving the engine can be supplied to the first power source 1, the second power source 2, and the load 10 by adjusting the output voltage with a regulator. The alternator 12 can generate power by regeneration when the vehicle is decelerated. The electric power regenerated by the alternator 12 can be used for charging the first power supply 1 and the second power supply 2.
　スタータ１３は、例えばセルモータを含んで構成され、第１電源１及び第２電源２の少なくとも一方からの電力供給を受けて、車両のエンジンを始動させる。 The starter 13 includes a cell motor, for example, and receives power supply from at least one of the first power source 1 and the second power source 2 to start the engine of the vehicle.
　以下、本実施形態の過電流遮断システム９０がどのように過電流を遮断してＭＯＳＦＥＴ３を保護するかを詳細に説明する。 Hereinafter, it will be described in detail how the overcurrent interruption system 90 of the present embodiment interrupts the overcurrent and protects the MOSFET 3.
　電流値検出部５は、ＭＯＳＦＥＴ３を流れる電流値を検出する。電流値検出部５は電流値を制御部６に出力する。制御部６は次のようにして過電流からＭＯＳＦＥＴ３を保護する。すなわち、制御部６は当該電流値に基づいて、過電流が流れているか否か、及び当該過電流がどちらの方向に流れているかを判定する。過電流がＭＯＳＦＥＴ３の寄生ダイオード３１の順方向に流れていると判定したとき、制御部６はリレー４をオフにする。これにより過電流は遮断されＭＯＳＦＥＴ３を流れないのでＭＯＳＦＥＴ３を保護することができる。また制御部６はＥＣＵ７に、過電流が流れていることを通知する。当該通知を取得したＥＣＵ７は、過電流が流れていることを報知部９に通知する。報知部９は過電流遮断システム９０が設けられた車両のドライバに異常を知らせる警告情報（ワーニング）を通知する。 The current value detection unit 5 detects the current value flowing through the MOSFET 3. The current value detection unit 5 outputs the current value to the control unit 6. The control unit 6 protects the MOSFET 3 from overcurrent as follows. That is, based on the current value, the control unit 6 determines whether or not an overcurrent is flowing and in which direction the overcurrent is flowing. When it is determined that the overcurrent is flowing in the forward direction of the parasitic diode 31 of the MOSFET 3, the control unit 6 turns off the relay 4. As a result, the overcurrent is cut off and does not flow through the MOSFET 3, so that the MOSFET 3 can be protected. In addition, the control unit 6 notifies the ECU 7 that an overcurrent is flowing. ECU7 which acquired the said notification notifies the alerting | reporting part 9 that overcurrent is flowing. The notification unit 9 notifies warning information (warning) that notifies the driver of the vehicle provided with the overcurrent interruption system 90 of the abnormality.
　一方、過電流がＭＯＳＦＥＴ３の寄生ダイオード３１の逆方向に流れていると判定したとき、制御部６はスイッチ制御部８からの出力を止めてＭＯＳＦＥＴ３をオフにする。また制御部６は追加的に、第１トランジスタＴ１及び第２トランジスタＴ２をオフにしてＭＯＳＦＥＴ３とスイッチ制御部８とを切り離してもよい。これによりＭＯＳＦＥＴ３を保護することができる。また、このとき制御部６はリレー４の状態を維持する。すなわち、制御部６はリレー４がオンのときにはオンのままにし、リレー４がオフのときにはオフのままにする。このためリレー４の作動頻度は下がり、もってリレー４の騒音防止及び長寿命化を図ることができる。また制御部６は、過電流が流れていることをＥＣＵ７に通知する。当該通知を取得したＥＣＵ７は、過電流が流れていることを報知部９に通知する。報知部９は過電流遮断システム９０が設けられた車両のドライバに異常を知らせる警告情報を通知する。 On the other hand, when it is determined that the overcurrent flows in the reverse direction of the parasitic diode 31 of the MOSFET 3, the control unit 6 stops the output from the switch control unit 8 and turns off the MOSFET 3. The control unit 6 may additionally disconnect the MOSFET 3 and the switch control unit 8 by turning off the first transistor T1 and the second transistor T2. As a result, the MOSFET 3 can be protected. At this time, the control unit 6 maintains the state of the relay 4. That is, the control unit 6 remains on when the relay 4 is on, and remains off when the relay 4 is off. For this reason, the operation frequency of the relay 4 is lowered, so that the noise of the relay 4 can be prevented and the life of the relay 4 can be extended. Further, the control unit 6 notifies the ECU 7 that an overcurrent is flowing. ECU7 which acquired the said notification notifies the alerting | reporting part 9 that overcurrent is flowing. The notification unit 9 notifies warning information notifying the driver of the vehicle provided with the overcurrent cutoff system 90 of the abnormality.
　制御部６は過電流が流れていないと判定したとき（異常がないと判定したとき）、ＭＯＳＦＥＴ３及びリレー４をオンにして、ＭＯＳＦＥＴ３を流れる電流を継続して監視（モニタリング）する。 When it is determined that no overcurrent is flowing (when it is determined that there is no abnormality), the control unit 6 turns on the MOSFET 3 and the relay 4 and continuously monitors (monitors) the current flowing through the MOSFET 3.
　図３は図１の電流値検出部５及び制御部６が定期的又は不定期的に実行する動作を示すシーケンス図である。 FIG. 3 is a sequence diagram showing an operation that the current value detection unit 5 and the control unit 6 in FIG. 1 execute regularly or irregularly.
　電流値検出部５は電流値を検出し（ステップＳ１）、検出した電流値を制御部６に出力する（ステップＳ２）。 The current value detection unit 5 detects the current value (step S1), and outputs the detected current value to the control unit 6 (step S2).
　電流値を取得した制御部６は、当該電流値が第２基準値を上回るか否かを判定する（ステップＳ３）。ステップＳ３でＹｅｓのとき、制御部６はリレー４をオフにし（ステップＳ４）、過電流が流れていることをＥＣＵ７に通知する（ステップＳ５）。また制御部６は過電流が流れ異常が発生している知らせる警告情報を、報知部９を介して車両のドライバに通知する（ステップＳ６）。 The control unit 6 that has acquired the current value determines whether or not the current value exceeds the second reference value (step S3). When Yes in step S3, the control unit 6 turns off the relay 4 (step S4) and notifies the ECU 7 that an overcurrent is flowing (step S5). Further, the control unit 6 notifies the driver of the vehicle via the notification unit 9 of warning information that informs that an overcurrent flows and an abnormality has occurred (step S6).
　ステップＳ３でＮｏのとき、制御部６は電流値が第１基準値を下回るか否かを判定する（ステップＳ７）。ステップＳ７でＹｅｓのとき、制御部６はスイッチ制御部８の出力を止めてＭＯＳＦＥＴ３をオフにし（ステップＳ８）、第１トランジスタＴ１及び第２トランジスタＴ２をオフにして、ＭＯＳＦＥＴ３をスイッチ制御部８から切り離す（ステップＳ９）。次いで制御部６はステップＳ５を実行する。 When No in step S3, the control unit 6 determines whether or not the current value is lower than the first reference value (step S7). When Yes in step S7, the control unit 6 stops the output of the switch control unit 8 to turn off the MOSFET 3 (step S8), turns off the first transistor T1 and the second transistor T2, and removes the MOSFET 3 from the switch control unit 8. Disconnect (step S9). Next, the control unit 6 executes Step S5.
　ステップＳ７でＮｏのとき制御部６は、過電流は流れていないと判定し、ＭＯＳＦＥＴ３及びリレー４をオンにする（ステップＳ１０）。制御部６は、継続して電流を監視する（ステップＳ１１）。 When the answer is No in step S7, the controller 6 determines that no overcurrent is flowing, and turns on the MOSFET 3 and the relay 4 (step S10). The controller 6 continuously monitors the current (Step S11).
　このように、本発明の一実施形態による過電流遮断システム９０によれば、制御部６は、電流値検出部５によって検出された電流に基づいて、ＭＯＳＦＥＴ３の寄生ダイオード３１の順方向に過電流が流れていると判定したとき、リレー４をオフにし、他方ＭＯＳＦＥＴ３の寄生ダイオード３１の逆方向に過電流が流れていると判定したとき、ＭＯＳＦＥＴ３をオフにする。このため、電流の流れる方向にかかわらず過電流を遮断しＭＯＳＦＥＴ３を保護することができる。 As described above, according to the overcurrent interruption system 90 according to the embodiment of the present invention, the control unit 6 detects the overcurrent in the forward direction of the parasitic diode 31 of the MOSFET 3 based on the current detected by the current value detection unit 5. When it is determined that the current flows, the relay 4 is turned off. On the other hand, when it is determined that the overcurrent flows in the reverse direction of the parasitic diode 31 of the MOSFET 3, the MOSFET 3 is turned off. For this reason, it is possible to protect the MOSFET 3 by interrupting the overcurrent regardless of the direction in which the current flows.
　このように、本発明の一実施形態による過電流遮断システム９０によれば、制御部６はＭＯＳＦＥＴ３の寄生ダイオード３１の逆方向に過電流が流れていると判定したとき、リレー４の状態を維持する。このため、リレー４の騒音防止及び長寿命化を図ることができる。 As described above, according to the overcurrent cutoff system 90 according to the embodiment of the present invention, when the control unit 6 determines that the overcurrent flows in the reverse direction of the parasitic diode 31 of the MOSFET 3, the state of the relay 4 is maintained. To do. For this reason, noise prevention and life extension of the relay 4 can be achieved.
　このように、本発明の一実施形態による過電流遮断システム９０によれば、ＭＯＳＦＥＴ３のソース側には第１電源１が接続され、ドレイン側には第２電源２が接続される。このため、第１電源１及び第２電源２から過電流遮断システム９０への双方向の電力供給を確保しつつも過電流を遮断してＭＯＳＦＥＴ３を保護することができる。 As described above, according to the overcurrent cutoff system 90 according to the embodiment of the present invention, the first power source 1 is connected to the source side of the MOSFET 3 and the second power source 2 is connected to the drain side. For this reason, it is possible to protect the MOSFET 3 by interrupting the overcurrent while ensuring bidirectional power supply from the first power supply 1 and the second power supply 2 to the overcurrent cutoff system 90.
　このように、本発明の一実施形態による過電流遮断システム９０によれば、第１電源１はリチウムイオン電池であり、第２電源２は鉛蓄電池である。第１電源１にリチウムイオン電池を用いるため、他の電池を用いる場合に比べて充電電力を長く保持して電力を有効利用することができる。また、鉛蓄電池を用いるため、他の電池を用いる場合に比べて過電流遮断システム９０の生産コストを抑制することができる。 Thus, according to the overcurrent interruption system 90 according to one embodiment of the present invention, the first power supply 1 is a lithium ion battery and the second power supply 2 is a lead storage battery. Since a lithium ion battery is used for the first power source 1, it is possible to effectively use the power while maintaining the charging power longer than when using other batteries. Moreover, since a lead storage battery is used, the production cost of the overcurrent interruption system 90 can be suppressed compared with the case where another battery is used.
　本発明を諸図面、実施形態、変形例に基づき説明してきたが、当業者であれば本開示に基づき種々の変形や修正を行うことが容易であることに注意されたい。したがって、これらの変形や修正は本発明の範囲に含まれることに留意されたい。例えば、各手段、各ステップ等に含まれる機能等は論理的に矛盾しないように再配置可能であり、複数の手段やステップ等を１つに組み合わせたり、或いは分割したりすることが可能である。 Although the present invention has been described based on the drawings, embodiments, and modifications, it should be noted that those skilled in the art can easily make various modifications and corrections based on the present disclosure. Therefore, it should be noted that these variations and modifications are included in the scope of the present invention. For example, the functions included in each means, each step, etc. can be rearranged so that there is no logical contradiction, and a plurality of means, steps, etc. can be combined or divided into one. .
　また、上述した実施形態１において、ハイブリッド車に搭載される過電流遮断システム９０について説明したが、これに限られない。例えば、過電流遮断システム９０は電気自動車（ＥＶ車）に搭載されてもよい。 In the above-described first embodiment, the overcurrent cutoff system 90 mounted on the hybrid vehicle has been described, but the present invention is not limited to this. For example, the overcurrent interruption system 90 may be mounted on an electric vehicle (EV vehicle).
［実施形態２］
　実施形態１では、過電流遮断システム９０はＭＯＳＦＥＴを１つ含む。一方で実施形態２では、以下のように、過電流遮断システム９０はＭＯＳＦＥＴを２つ含む。 [Embodiment 2]
In the first embodiment, the overcurrent interruption system 90 includes one MOSFET. On the other hand, in the second embodiment, the overcurrent cutoff system 90 includes two MOSFETs as follows.
　はじめに、図４を参照して、実施形態２に係る過電流遮断システム９０の概略構成を説明する。実施形態１と共通する説明は省略する。 First, a schematic configuration of an overcurrent interruption system 90 according to the second embodiment will be described with reference to FIG. Descriptions common to the first embodiment are omitted.
　過電流遮断システム９０は、少なくとも第１のＭＯＳＦＥＴ３ａ、第２のＭＯＳＦＥＴ３ｂ、リレー４、電流値検出部５及び制御部６を有する。過電流遮断システム９０は例えば、第１電源１、第２電源２、ＥＣＵ７、スイッチ制御部８、報知部９、負荷１０、整流素子１１、オルタネータ１２及びスタータ１３等をさらに有してもよい。 The overcurrent interruption system 90 includes at least a first MOSFET 3a, a second MOSFET 3b, a relay 4, a current value detection unit 5, and a control unit 6. The overcurrent interruption system 90 may further include, for example, a first power supply 1, a second power supply 2, an ECU 7, a switch control unit 8, a notification unit 9, a load 10, a rectifying element 11, an alternator 12, a starter 13, and the like.
　第１電源１は第１のＭＯＳＦＥＴ３ａ及び第２のＭＯＳＦＥＴ３ｂがオンになっているとき、負荷１０に対して電力を供給可能である。 The first power supply 1 can supply power to the load 10 when the first MOSFET 3a and the second MOSFET 3b are turned on.
　第１のＭＯＳＦＥＴ３ａ及び第２のＭＯＳＦＥＴ３ｂは、電気駆動するスイッチング素子であり、スイッチ制御部８の制御によってオンとオフとを切替可能である。本実施形態における第１のＭＯＳＦＥＴ３ａ及び第２のＭＯＳＦＥＴ３ｂはｎ型である。第１のＭＯＳＦＥＴ３ａの寄生ダイオード３１ａの順方向は、第２のＭＯＳＦＥＴ３ｂの寄生ダイオード３１ｂの順方向とは逆方向である。本実施形態では、寄生ダイオード３１ａの順方向は第２電源２から第１電源１への方向であり、寄生ダイオード３１ｂの順方向は第１電源１から第２電源２への方向である。なお、第２のＭＯＳＦＥＴ３ｂは、本発明の第１の遮断部に対応する。 The first MOSFET 3 a and the second MOSFET 3 b are electrically driven switching elements, and can be switched on and off under the control of the switch control unit 8. The first MOSFET 3a and the second MOSFET 3b in this embodiment are n-type. The forward direction of the parasitic diode 31a of the first MOSFET 3a is opposite to the forward direction of the parasitic diode 31b of the second MOSFET 3b. In this embodiment, the forward direction of the parasitic diode 31a is the direction from the second power supply 2 to the first power supply 1, and the forward direction of the parasitic diode 31b is the direction from the first power supply 1 to the second power supply 2. The second MOSFET 3b corresponds to the first cutoff part of the present invention.
　図４に示すように第２のＭＯＳＦＥＴ３ｂのソース側には第１電源１が接続され、第２のＭＯＳＦＥＴ３ｂのドレインと第１のＭＯＳＦＥＴ３ａのドレインとが接続され、第１のＭＯＳＦＥＴ３ａのソース側には第２電源２が接続される。 As shown in FIG. 4, the first power supply 1 is connected to the source side of the second MOSFET 3b, the drain of the second MOSFET 3b and the drain of the first MOSFET 3a are connected, and the source side of the first MOSFET 3a is connected to the source side of the first MOSFET 3a. A second power supply 2 is connected.
　図４には２つのＭＯＳＦＥＴを示すが、ＭＯＳＦＥＴの数は限定されない。例えば第１のＭＯＳＦＥＴ３ａと並列に別の１以上のＭＯＳＦＥＴが接続され、第２のＭＯＳＦＥＴ３ｂと並列に別の１以上のＭＯＳＦＥＴが接続されてもよい。ＭＯＳＦＥＴの数が多いほど、電力負荷を分散することが可能である。 FIG. 4 shows two MOSFETs, but the number of MOSFETs is not limited. For example, another one or more MOSFETs may be connected in parallel with the first MOSFET 3a, and another one or more MOSFETs may be connected in parallel with the second MOSFET 3b. As the number of MOSFETs increases, the power load can be distributed.
　第１のＭＯＳＦＥＴ３ａ及び第２のＭＯＳＦＥＴ３ｂのそれぞれのソースとゲートとの間には抵抗Ｒａが接続される。このためソースとゲートとの間の電位差を抑制することができる。また、第１のＭＯＳＦＥＴ３ａ及び第２のＭＯＳＦＥＴ３ｂのゲートには、ゲート前抵抗Ｒｂが接続される。これにより、寄生キャパシタによる突入電流が第１のＭＯＳＦＥＴ３ａ又は第２のＭＯＳＦＥＴ３ｂのゲートに大電流として流れることを防ぐことができる。 A resistor Ra is connected between the source and gate of each of the first MOSFET 3a and the second MOSFET 3b. For this reason, the potential difference between the source and the gate can be suppressed. Further, a pre-gate resistor Rb is connected to the gates of the first MOSFET 3a and the second MOSFET 3b. Thereby, the inrush current due to the parasitic capacitor can be prevented from flowing as a large current to the gate of the first MOSFET 3a or the second MOSFET 3b.
　リレー４は任意に接続され、ＥＣＵ７を介した制御部６の制御によってオンとオフとを切替可能である。本実施形態においてリレー４は第２のＭＯＳＦＥＴ３ｂのソースに接続される。リレー４がオンのとき第１電源１と第２のＭＯＳＦＥＴ３ｂとの間には電流が流れ、リレー４がオフのとき第１電源１と第２のＭＯＳＦＥＴ３ｂとの間には電流が流れない。 The relay 4 is arbitrarily connected and can be switched on and off under the control of the control unit 6 via the ECU 7. In this embodiment, the relay 4 is connected to the source of the second MOSFET 3b. When the relay 4 is on, a current flows between the first power source 1 and the second MOSFET 3b. When the relay 4 is off, no current flows between the first power source 1 and the second MOSFET 3b.
　電流値検出部５は、例えばシャント抵抗、電流センスアンプ及び電圧レギュレータ等により構成される。図４において電流値検出部５は第１のＭＯＳＦＥＴ３ａのソースに接続される。代替例として電流値検出部５は、第１のＭＯＳＦＥＴ３ａと第２のＭＯＳＦＥＴ３ｂとの間、又は、第２のＭＯＳＦＥＴ３ｂのソースに接続されてもよい。 The current value detection unit 5 includes, for example, a shunt resistor, a current sense amplifier, a voltage regulator, and the like. In FIG. 4, the current value detector 5 is connected to the source of the first MOSFET 3a. As an alternative example, the current value detection unit 5 may be connected between the first MOSFET 3a and the second MOSFET 3b or the source of the second MOSFET 3b.
　制御部６は過電流遮断システム９０の動作全体を制御するＣＰＵ（Central Processing Unit）等のプロセッサである。制御部６はスイッチ制御部８を介して第１のＭＯＳＦＥＴ３ａ及び第２のＭＯＳＦＥＴ３ｂを制御可能であり、ＥＣＵ７を介してリレー４及び報知部９を制御可能である。 The control unit 6 is a processor such as a CPU (Central Processing Unit) that controls the entire operation of the overcurrent interruption system 90. The control unit 6 can control the first MOSFET 3 a and the second MOSFET 3 b through the switch control unit 8, and can control the relay 4 and the notification unit 9 through the ECU 7.
　スイッチ制御部８は、第１電源１と第２電源２との少なくとも一方から電力供給を受け、制御部６の制御により第１のＭＯＳＦＥＴ３ａ及び第２のＭＯＳＦＥＴ３ｂのオンとオフとを制御可能である。 The switch control unit 8 is supplied with power from at least one of the first power supply 1 and the second power supply 2, and can control the on / off of the first MOSFET 3a and the second MOSFET 3b by the control of the control unit 6. .
　以下、本実施形態の過電流遮断システム９０がどのように過電流を遮断して第１のＭＯＳＦＥＴ３ａ及び第２のＭＯＳＦＥＴ３ｂを保護するかを詳細に説明する。 Hereinafter, it will be described in detail how the overcurrent cutoff system 90 of the present embodiment cuts off the overcurrent and protects the first MOSFET 3a and the second MOSFET 3b.
　電流値検出部５は、第１のＭＯＳＦＥＴ３ａ及び第２のＭＯＳＦＥＴ３ｂを流れる電流値を検出する。電流値検出部５は、検出した電流値を制御部６に出力する。制御部６は当該電流値に基づいて、過電流が流れているか否かを判定する。制御部６は、過電流が流れていると判定したとき、次のようにして第１のＭＯＳＦＥＴ３ａ及び第２のＭＯＳＦＥＴ３ｂの両方をオフにする。 The current value detector 5 detects the current value flowing through the first MOSFET 3a and the second MOSFET 3b. The current value detection unit 5 outputs the detected current value to the control unit 6. The control unit 6 determines whether or not an overcurrent is flowing based on the current value. When it is determined that the overcurrent is flowing, the controller 6 turns off both the first MOSFET 3a and the second MOSFET 3b as follows.
　すなわち、制御部６は、過電流が流れていると判定したとき、スイッチ制御部８から第１トランジスタＴ１への出力を止める。これにより、第１のＭＯＳＦＥＴ３ａと第２のＭＯＳＦＥＴ３ｂとの両方はオフになる。また制御部６は、第１トランジスタＴ１及び第２トランジスタＴ２をオフにしてゲート信号ラインを切り離す（カットする）ことで、第１のＭＯＳＦＥＴ３ａと第２のＭＯＳＦＥＴ３ｂとの両方をオフにしてもよい。これにより過電流がどちらの方向に流れているかを判定する必要無く、確実に第１のＭＯＳＦＥＴ３ａ及び第２のＭＯＳＦＥＴ３ｂを保護することができる。 That is, when it is determined that an overcurrent is flowing, the control unit 6 stops the output from the switch control unit 8 to the first transistor T1. As a result, both the first MOSFET 3a and the second MOSFET 3b are turned off. Further, the control unit 6 may turn off both the first MOSFET 3a and the second MOSFET 3b by turning off the first transistor T1 and the second transistor T2 to cut (cut) the gate signal line. Thus, the first MOSFET 3a and the second MOSFET 3b can be reliably protected without having to determine in which direction the overcurrent flows.
　続いて制御部６はＥＣＵ７に、過電流が流れていることを通知する。当該通知を取得したＥＣＵ７は、過電流が流れていることを報知部９に通知する。報知部９は過電流遮断システム９０が設けられた車両のドライバに、異常を知らせる警告情報（ワーニング）を通知する。 Subsequently, the control unit 6 notifies the ECU 7 that an overcurrent is flowing. ECU7 which acquired the said notification notifies the alerting | reporting part 9 that overcurrent is flowing. The notification unit 9 notifies the driver of the vehicle provided with the overcurrent interruption system 90 of warning information (warning) for notifying abnormality.
　制御部６は過電流が流れていないと判定したとき（異常がないと判定したとき）、第１のＭＯＳＦＥＴ３ａ及び第２のＭＯＳＦＥＴ３ｂをオンにして、第１のＭＯＳＦＥＴ３ａ及び第２のＭＯＳＦＥＴ３ｂを流れる電流を継続して監視（モニタリング）する。 When it is determined that no overcurrent is flowing (when it is determined that there is no abnormality), the control unit 6 turns on the first MOSFET 3a and the second MOSFET 3b, and the current flowing through the first MOSFET 3a and the second MOSFET 3b. Continue monitoring (monitoring).
　図５は図３の電流値検出部５及び制御部６が定期的又は不定期的に実行する動作を示すシーケンス図である。 FIG. 5 is a sequence diagram showing an operation that the current value detection unit 5 and the control unit 6 of FIG. 3 execute regularly or irregularly.
　電流値検出部５は電流値を検出し（ステップＳ２１）、検出した電流値を制御部６に出力する（ステップＳ２２）。 The current value detection unit 5 detects the current value (step S21), and outputs the detected current value to the control unit 6 (step S22).
　電流値を取得した制御部６は、当該電流値に基づいて、過電流が流れているか否かを判定する（ステップＳ２３）。ステップＳ２３でＹｅｓのとき、制御部６はスイッチ制御部８から第１トランジスタＴ１への出力を止めることによって第１のＭＯＳＦＥＴ３ａ及び第２のＭＯＳＦＥＴ３ｂをオフにする（ステップＳ２４）。また制御部６は、第１トランジスタＴ１及び第２トランジスタＴ２をオフにして、第１のＭＯＳＦＥＴ３ａ及び第２のＭＯＳＦＥＴ３ｂからスイッチ制御部８へのゲート信号ラインを切り離す（ステップＳ２５）。これにより制御部６は、第１のＭＯＳＦＥＴ３ａ及び第２のＭＯＳＦＥＴ３ｂをオフにしてもよい。 The controller 6 that has acquired the current value determines whether or not an overcurrent is flowing based on the current value (step S23). When Yes in step S23, the control unit 6 turns off the first MOSFET 3a and the second MOSFET 3b by stopping the output from the switch control unit 8 to the first transistor T1 (step S24). Further, the control unit 6 turns off the first transistor T1 and the second transistor T2, and disconnects the gate signal line from the first MOSFET 3a and the second MOSFET 3b to the switch control unit 8 (step S25). Thereby, the control unit 6 may turn off the first MOSFET 3a and the second MOSFET 3b.
　制御部６は、過電流が流れていることをＥＣＵ７に通知する（ステップＳ２６）。また制御部６は、過電流が流れ異常が発生していることを知らせる警告情報を、報知部９を介して車両のドライバに通知する（ステップＳ２７）。 The control unit 6 notifies the ECU 7 that an overcurrent is flowing (step S26). Moreover, the control part 6 notifies the warning information which notifies that the overcurrent flows and abnormality has generate | occur | produced to the driver of a vehicle via the alerting | reporting part 9 (step S27).
　ステップＳ２３でＮｏのとき、制御部６は過電流が流れていないと判定し、第１のＭＯＳＦＥＴ３ａ及び第２のＭＯＳＦＥＴ３ｂをオンにする（ステップＳ２８）。制御部６は、継続して電流を監視する（ステップＳ２９）。 When No in step S23, the control unit 6 determines that no overcurrent is flowing, and turns on the first MOSFET 3a and the second MOSFET 3b (step S28). The controller 6 continuously monitors the current (Step S29).
　このように、実施形態２に係る過電流遮断システム９０によれば、第１のＭＯＳＦＥＴ３ａと第２のＭＯＳＦＥＴ３ｂとが直列に接続される。また第１のＭＯＳＦＥＴ３ａの寄生ダイオード３１ａの順方向は、第２のＭＯＳＦＥＴ３ｂの寄生ダイオード３１ｂの順方向とは逆方向である。制御部６は、過電流が流れていると判定したとき、第１のＭＯＳＦＥＴ３ａ及び第２のＭＯＳＦＥＴ３ｂの両方をオフにする。このため、過電流が流れる方向にかかわらず過電流を遮断し、第１のＭＯＳＦＥＴ３ａ及び第２のＭＯＳＦＥＴ３ｂを確実に保護することができる。また、過電流がどちらの方向に流れているかを判定する必要が無い。 Thus, according to the overcurrent cutoff system 90 according to the second embodiment, the first MOSFET 3a and the second MOSFET 3b are connected in series. The forward direction of the parasitic diode 31a of the first MOSFET 3a is opposite to the forward direction of the parasitic diode 31b of the second MOSFET 3b. When it is determined that the overcurrent is flowing, the control unit 6 turns off both the first MOSFET 3a and the second MOSFET 3b. For this reason, regardless of the direction in which the overcurrent flows, the overcurrent can be cut off, and the first MOSFET 3a and the second MOSFET 3b can be reliably protected. Further, there is no need to determine in which direction the overcurrent flows.
　また、実施形態２に係る過電流遮断システム９０によれば、第１のＭＯＳＦＥＴ３ａのソース側には鉛蓄電池が接続される。このため、他の電池を用いる場合に比べて過電流遮断システム９０の生産コストを抑制することができる。また第２のＭＯＳＦＥＴ３ｂのソース側にはリチウムイオン電池が接続される。このため、他の電池を用いる場合に比べて充電電力を長く保持して電力を有効利用することができる。 Moreover, according to the overcurrent interruption system 90 according to the second embodiment, a lead storage battery is connected to the source side of the first MOSFET 3a. For this reason, the production cost of the overcurrent interruption system 90 can be suppressed compared with the case where another battery is used. A lithium ion battery is connected to the source side of the second MOSFET 3b. For this reason, compared with the case where another battery is used, charging power can be kept longer and the power can be used effectively.
　本発明の実施形態２を諸図面、実施形態、変形例に基づき説明してきたが、当業者であれば本開示に基づき種々の変形や修正を行うことが容易であることに注意されたい。 Although Embodiment 2 of the present invention has been described based on the drawings, embodiments, and modifications, it should be noted that those skilled in the art can easily make various modifications and corrections based on the present disclosure.
　例えば実施形態２においては、第１電源１から第２電源２への方向に、第１のＭＯＳＦＥＴ３ａと第２のＭＯＳＦＥＴ３ｂとがこの順で接続されるが、それらの接続の順番は逆であってもよい。 For example, in the second embodiment, the first MOSFET 3a and the second MOSFET 3b are connected in this order in the direction from the first power supply 1 to the second power supply 2. However, the order of the connection is reversed. Also good.
　また、実施形態２において、第１のＭＯＳＦＥＴ３ａ及び第２のＭＯＳＦＥＴ３ｂは共にｎ型であるが、共にｐ型であってもよい。 In the second embodiment, both the first MOSFET 3a and the second MOSFET 3b are n-type, but both may be p-type.
［実施形態３］
　実施形態２では、制御部６は、過電流が流れていると判定したとき、第１のＭＯＳＦＥＴ３ａ及び第２のＭＯＳＦＥＴ３ｂの両方をオフにしている。一方で実施形態３では、制御部６が第１のＭＯＳＦＥＴ３ａと第２のＭＯＳＦＥＴ３ｂとを別々に制御する。具体的には、制御部６は、過電流が流れていると判定したとき、第１のＭＯＳＦＥＴ３ａと第２のＭＯＳＦＥＴ３ｂとのうち、過電流に対し逆方向である寄生ダイオードを有する方のＭＯＳＦＥＴを少なくともオフにして過電流を遮断する。以下、実施形態３を詳細に説明する。実施形態３では、実施形態１又は２と重複する説明は省略する。 [Embodiment 3]
In the second embodiment, when it is determined that the overcurrent is flowing, the control unit 6 turns off both the first MOSFET 3a and the second MOSFET 3b. On the other hand, in the third embodiment, the control unit 6 controls the first MOSFET 3a and the second MOSFET 3b separately. Specifically, when it is determined that the overcurrent is flowing, the control unit 6 selects the MOSFET having the parasitic diode that is opposite to the overcurrent from the first MOSFET 3a and the second MOSFET 3b. Turn off at least to shut off overcurrent. Hereinafter, the third embodiment will be described in detail. In the third embodiment, the description overlapping that of the first or second embodiment is omitted.
　図６に示すように、制御部６及びスイッチ制御部８には更に、第３トランジスタＴ３及び第４トランジスタＴ４が接続される。第３トランジスタＴ３及び第４トランジスタＴ４はそれぞれＰＮＰ型トランジスタ及びＮＰＮ型トランジスタであるが、これに限られない。制御部６は、過電流が第１電源１から第２電源２への方向に流れていると判定したとき、スイッチ制御部８から第１トランジスタＴ１への出力を止める。これにより、第１のＭＯＳＦＥＴ３ａはオフになる。また制御部６は、第１トランジスタＴ１及び第２トランジスタＴ２をオフにしてゲート信号ラインを切り離すことで、少なくとも第１のＭＯＳＦＥＴ３ａをオフにしてもよい。 As shown in FIG. 6, a third transistor T3 and a fourth transistor T4 are further connected to the control unit 6 and the switch control unit 8. The third transistor T3 and the fourth transistor T4 are a PNP transistor and an NPN transistor, respectively, but are not limited thereto. When it is determined that the overcurrent is flowing in the direction from the first power source 1 to the second power source 2, the control unit 6 stops the output from the switch control unit 8 to the first transistor T1. As a result, the first MOSFET 3a is turned off. The control unit 6 may turn off at least the first MOSFET 3a by turning off the first transistor T1 and the second transistor T2 and disconnecting the gate signal line.
　他方で制御部６は、過電流が第２電源２から第１電源１への方向に流れていると判定したとき、スイッチ制御部８から第３トランジスタＴ３への出力を止める。これにより、第２のＭＯＳＦＥＴ３ｂはオフになる。また制御部６は、第３トランジスタＴ３及び第４トランジスタＴ４をオフにしてゲート信号ラインを切り離すことで、少なくとも第２のＭＯＳＦＥＴ３ｂをオフにしてもよい。 On the other hand, when it is determined that the overcurrent is flowing in the direction from the second power source 2 to the first power source 1, the control unit 6 stops the output from the switch control unit 8 to the third transistor T3. As a result, the second MOSFET 3b is turned off. The control unit 6 may turn off at least the second MOSFET 3b by turning off the third transistor T3 and the fourth transistor T4 to cut off the gate signal line.
　実施形態３による過電流遮断システム９０によれば、制御部６は、第１のＭＯＳＦＥＴ３ａ及び第２のＭＯＳＦＥＴ３ｂのうち、過電流に対し逆方向である寄生ダイオードを有する方のＭＯＳＦＥＴを少なくともオフにして過電流を遮断する。このため、第１のＭＯＳＦＥＴ３ａ又は第２のＭＯＳＦＥＴ３ｂの作動を最小限にすることができる。 According to the overcurrent cutoff system 90 according to the third embodiment, the control unit 6 turns off at least one of the first MOSFET 3a and the second MOSFET 3b that has a parasitic diode that is opposite to the overcurrent. Cut off the overcurrent. For this reason, the operation of the first MOSFET 3a or the second MOSFET 3b can be minimized.
１　　第１電源
２　　第２電源
３　　ＭＯＳＦＥＴ
３ａ　第１のＭＯＳＦＥＴ
３ｂ　第２のＭＯＳＦＥＴ
３１、３１ａ、３１ｂ　寄生ダイオード
４　　リレー
５　　電流値検出部
６　　制御部
７　　ＥＣＵ
８　　スイッチ制御部
９　　報知部
１０　負荷
１１　整流素子
１１ａ　第１整流素子
１１ｂ　第２整流素子
１２　オルタネータ
１３　スタータ
９０　過電流遮断システム
Ｔ１　第１トランジスタ
Ｔ２　第２トランジスタ
Ｔ３　第３トランジスタ
Ｔ４　第４トランジスタ
Ｒａ　抵抗
Ｒｂ　ゲート前抵抗 1 First power source 2 Second power source 3 MOSFET
3a First MOSFET
3b Second MOSFET
31, 31a, 31b Parasitic diode 4 Relay 5 Current value detection unit 6 Control unit 7 ECU
8 Switch control unit 9 Notification unit 10 Load 11 Rectifier element 11a First rectifier element 11b Second rectifier element 12 Alternator 13 Starter 90 Overcurrent cutoff system T1 First transistor T2 Second transistor T3 Third transistor T4 Fourth transistor Ra Resistance Rb Resistance before gate

Claims (13)

  1. 　第１のＭＯＳＦＥＴと、
    　前記第１のＭＯＳＦＥＴを流れる電流の値を検出する電流値検出部と、
    　オンオフ状態を切替可能であり、オフ状態において前記第１のＭＯＳＦＥＴの寄生ダイオードの順方向に流れる過電流を遮断する第１の遮断部と、
    　オンオフ状態を切替可能であり、オフ状態において前記第１のＭＯＳＦＥＴの寄生ダイオードの逆方向に流れる過電流を遮断する第２の遮断部と、
    　前記第１の遮断部と前記第２の遮断部とを切替制御可能な制御部とを有し、
    　前記制御部は、前記電流値検出部によって検出された電流に基づいて、前記第１のＭＯＳＦＥＴの寄生ダイオードの順方向に過電流が流れていると判定したとき、前記第１の遮断部をオフにし、前記第１のＭＯＳＦＥＴの前記寄生ダイオードの逆方向に過電流が流れていると判定したとき、前記第２の遮断部をオフにする、
    　過電流遮断システム。     A first MOSFET;
    A current value detection unit for detecting a value of a current flowing through the first MOSFET;
    A first cut-off unit that can be switched between an on-off state and cuts off an overcurrent flowing in a forward direction of the parasitic diode of the first MOSFET in the off-state;
    A second shut-off unit that can be switched between an on-off state and shuts off an overcurrent that flows in the reverse direction of the parasitic diode of the first MOSFET in the off-state;
    A control unit capable of switching and controlling the first blocking unit and the second blocking unit;
    When the controller determines that an overcurrent is flowing in the forward direction of the parasitic diode of the first MOSFET based on the current detected by the current value detector, the controller turns off the first interrupter. And when it is determined that an overcurrent is flowing in the reverse direction of the parasitic diode of the first MOSFET, the second cutoff unit is turned off.
    Overcurrent interrupt system.
  2. 　前記第１の遮断部は、前記第１のＭＯＳＦＥＴのソース側に接続されたリレーを含み、
    　前記第２の遮断部は、前記第１のＭＯＳＦＥＴを含むことを特徴とする請求項１に記載の過電流遮断システム。     The first cutoff unit includes a relay connected to the source side of the first MOSFET,
    The overcurrent cutoff system according to claim 1, wherein the second cutoff unit includes the first MOSFET.
  3. 　前記制御部は、前記第１のＭＯＳＦＥＴの前記寄生ダイオードの逆方向に過電流が流れていると判定したとき、前記リレーの状態を維持することを特徴とする請求項２に記載の過電流遮断システム。 3. The overcurrent cutoff according to claim 2, wherein the control unit maintains the relay state when it is determined that an overcurrent flows in a reverse direction of the parasitic diode of the first MOSFET. 4. system.
  4. 　前記第１のＭＯＳＦＥＴのソース側には第１電源が接続され、ドレイン側には第２電源が接続されることを特徴とする請求項１に記載の過電流遮断システム。 The overcurrent cutoff system according to claim 1, wherein a first power source is connected to a source side of the first MOSFET, and a second power source is connected to a drain side.
  5. 　前記第１のＭＯＳＦＥＴのソース側には第１電源が接続され、ドレイン側には第２電源が接続されることを特徴とする請求項２に記載の過電流遮断システム。 3. The overcurrent cutoff system according to claim 2, wherein a first power source is connected to a source side of the first MOSFET, and a second power source is connected to a drain side.
  6. 　前記第１のＭＯＳＦＥＴのソース側には第１電源が接続され、ドレイン側には第２電源が接続されることを特徴とする請求項３に記載の過電流遮断システム。 4. The overcurrent cutoff system according to claim 3, wherein a first power source is connected to a source side of the first MOSFET, and a second power source is connected to a drain side.
  7. 　前記第１電源はリチウムイオン電池であり、前記第２電源は鉛蓄電池であることを特徴とする請求項４に記載の過電流遮断システム。 5. The overcurrent interruption system according to claim 4, wherein the first power source is a lithium ion battery and the second power source is a lead acid battery.
  8. 　前記第１電源はリチウムイオン電池であり、前記第２電源は鉛蓄電池であることを特徴とする請求項５に記載の過電流遮断システム。 6. The overcurrent interruption system according to claim 5, wherein the first power source is a lithium ion battery, and the second power source is a lead acid battery.
  9. 　前記第１電源はリチウムイオン電池であり、前記第２電源は鉛蓄電池であることを特徴とする請求項６に記載の過電流遮断システム。 The overcurrent cutoff system according to claim 6, wherein the first power source is a lithium ion battery and the second power source is a lead acid battery.
  10. 　前記第１のＭＯＳＦＥＴは、第２のＭＯＳＦＥＴと直列に接続され、
    　前記第１のＭＯＳＦＥＴの寄生ダイオードの順方向は、前記第２のＭＯＳＦＥＴの寄生ダイオードの順方向とは逆方向であり、
    　前記第１の遮断部は、少なくとも前記第２のＭＯＳＦＥＴを含み、
    　前記第２の遮断部は、少なくとも前記第１のＭＯＳＦＥＴを含むことを特徴とする請求項１に記載の過電流遮断システム。     The first MOSFET is connected in series with a second MOSFET,
    The forward direction of the parasitic diode of the first MOSFET is opposite to the forward direction of the parasitic diode of the second MOSFET,
    The first blocking unit includes at least the second MOSFET,
    The overcurrent cutoff system according to claim 1, wherein the second cutoff unit includes at least the first MOSFET.
  11. 　前記制御部は、前記第１のＭＯＳＦＥＴ及び前記第２のＭＯＳＦＥＴに過電流が流れていると判定したとき、前記第１のＭＯＳＦＥＴ及び前記第２のＭＯＳＦＥＴの両方をオフにすることを特徴とする請求項１０に記載の過電流遮断システム。 The control unit turns off both the first MOSFET and the second MOSFET when it is determined that an overcurrent flows in the first MOSFET and the second MOSFET. The overcurrent interruption system according to claim 10.
  12. 　前記第１のＭＯＳＦＥＴのソース側には鉛蓄電池が接続され、前記第２のＭＯＳＦＥＴのソース側にはリチウムイオン電池が接続されることを特徴とする請求項１０に記載の過電流遮断システム。 The overcurrent interruption system according to claim 10, wherein a lead storage battery is connected to the source side of the first MOSFET, and a lithium ion battery is connected to the source side of the second MOSFET.
  13. 　前記第１のＭＯＳＦＥＴのソース側には鉛蓄電池が接続され、前記第２のＭＯＳＦＥＴのソース側にはリチウムイオン電池が接続されることを特徴とする請求項１１に記載の過電流遮断システム。 The overcurrent cutoff system according to claim 11, wherein a lead storage battery is connected to the source side of the first MOSFET, and a lithium ion battery is connected to the source side of the second MOSFET.
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