WO2017111371A3 - Plasma deposition apparatus - Google Patents

Plasma deposition apparatus Download PDF

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Publication number
WO2017111371A3
WO2017111371A3 PCT/KR2016/014558 KR2016014558W WO2017111371A3 WO 2017111371 A3 WO2017111371 A3 WO 2017111371A3 KR 2016014558 W KR2016014558 W KR 2016014558W WO 2017111371 A3 WO2017111371 A3 WO 2017111371A3
Authority
WO
WIPO (PCT)
Prior art keywords
deposition apparatus
plasma deposition
cathode electrode
magnetic field
vacuum chamber
Prior art date
Application number
PCT/KR2016/014558
Other languages
French (fr)
Korean (ko)
Other versions
WO2017111371A2 (en
Inventor
안경준
김찬호
정성훈
Original Assignee
(주) 에스엔텍
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020150186431A external-priority patent/KR101800202B1/en
Priority claimed from KR1020150186437A external-priority patent/KR101800199B1/en
Priority claimed from KR1020150186439A external-priority patent/KR101778602B1/en
Priority claimed from KR1020150186445A external-priority patent/KR101790619B1/en
Priority claimed from KR1020150186429A external-priority patent/KR20170076314A/en
Application filed by (주) 에스엔텍 filed Critical (주) 에스엔텍
Publication of WO2017111371A2 publication Critical patent/WO2017111371A2/en
Publication of WO2017111371A3 publication Critical patent/WO2017111371A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3417—Arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The present invention relates to a plasma deposition apparatus and, more particularly, to a plasma deposition apparatus that is packaged to enable an electrode main body and a magnet configuring a cathode electrode to rotate separately, that can efficiently control the position at which a magnetic field is formed according to various deposition conditions, that can maximize the magnetic field generating area inside a vacuum chamber by having driving means for driving the cathode electrode provided detachably on the outside of the vacuum chamber, and that facilitates the replacement of the cathode electrode.
PCT/KR2016/014558 2015-12-24 2016-12-13 Plasma deposition apparatus WO2017111371A2 (en)

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
KR1020150186431A KR101800202B1 (en) 2015-12-24 2015-12-24 plasma deposition apparatus
KR10-2015-0186429 2015-12-24
KR1020150186437A KR101800199B1 (en) 2015-12-24 2015-12-24 plasma deposition apparatus having a plurality Cathode electrode
KR10-2015-0186431 2015-12-24
KR1020150186439A KR101778602B1 (en) 2015-12-24 2015-12-24 driving means of electrode case for plasma deposition apparatus
KR10-2015-0186437 2015-12-24
KR10-2015-0186439 2015-12-24
KR10-2015-0186445 2015-12-24
KR1020150186445A KR101790619B1 (en) 2015-12-24 2015-12-24 driving means of magnet for plasma deposition apparatus
KR1020150186429A KR20170076314A (en) 2015-12-24 2015-12-24 Cathode electrode for deposition apparatus

Publications (2)

Publication Number Publication Date
WO2017111371A2 WO2017111371A2 (en) 2017-06-29
WO2017111371A3 true WO2017111371A3 (en) 2017-08-10

Family

ID=59090783

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2016/014558 WO2017111371A2 (en) 2015-12-24 2016-12-13 Plasma deposition apparatus

Country Status (2)

Country Link
TW (1) TW201731348A (en)
WO (1) WO2017111371A2 (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006303265A (en) * 2005-04-22 2006-11-02 Dainippon Printing Co Ltd Film forming system and method
KR20070097708A (en) * 2006-03-29 2007-10-05 삼성에스디아이 주식회사 Transferring apparatus for vacuum chamber
KR101160680B1 (en) * 2009-12-03 2012-06-28 (주)에스엔텍 A cylindrical sputtering cathode
KR20130012017A (en) * 2010-03-31 2013-01-30 무스탕 배큠 시스템즈 인코포레이티드 Cylindrical rotating magnetron sputtering cathode device and method of depositing material using radio frequency emissions
KR101391440B1 (en) * 2013-10-17 2014-05-07 주식회사 코빅 The cylindrical cathode that the transportation of the magnet is possible
KR20150001161A (en) * 2013-06-26 2015-01-06 주식회사 케이시엠시 Sputter apparatus

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006303265A (en) * 2005-04-22 2006-11-02 Dainippon Printing Co Ltd Film forming system and method
KR20070097708A (en) * 2006-03-29 2007-10-05 삼성에스디아이 주식회사 Transferring apparatus for vacuum chamber
KR101160680B1 (en) * 2009-12-03 2012-06-28 (주)에스엔텍 A cylindrical sputtering cathode
KR20130012017A (en) * 2010-03-31 2013-01-30 무스탕 배큠 시스템즈 인코포레이티드 Cylindrical rotating magnetron sputtering cathode device and method of depositing material using radio frequency emissions
KR20150001161A (en) * 2013-06-26 2015-01-06 주식회사 케이시엠시 Sputter apparatus
KR101391440B1 (en) * 2013-10-17 2014-05-07 주식회사 코빅 The cylindrical cathode that the transportation of the magnet is possible

Also Published As

Publication number Publication date
WO2017111371A2 (en) 2017-06-29
TW201731348A (en) 2017-09-01

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