JP2016076322A5 - - Google Patents

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Publication number
JP2016076322A5
JP2016076322A5 JP2014204446A JP2014204446A JP2016076322A5 JP 2016076322 A5 JP2016076322 A5 JP 2016076322A5 JP 2014204446 A JP2014204446 A JP 2014204446A JP 2014204446 A JP2014204446 A JP 2014204446A JP 2016076322 A5 JP2016076322 A5 JP 2016076322A5
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JP
Japan
Prior art keywords
generation chamber
plasma generation
ion source
cathode
support base
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Application number
JP2014204446A
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Japanese (ja)
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JP2016076322A (en
JP6439966B2 (en
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Priority to JP2014204446A priority Critical patent/JP6439966B2/en
Priority claimed from JP2014204446A external-priority patent/JP6439966B2/en
Publication of JP2016076322A publication Critical patent/JP2016076322A/en
Publication of JP2016076322A5 publication Critical patent/JP2016076322A5/ja
Application granted granted Critical
Publication of JP6439966B2 publication Critical patent/JP6439966B2/en
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Claims (4)

プラズマ生成室の周囲に永久磁石を具備したイオン源であって、
前記プラズマ生成室内に電子を供給するカソードと、
前記カソードを支持し、前記プラズマ生成室の外側に配置された支持ベースと、
前記プラズマ生成室の壁面に形成され、前記カソードが挿通される貫通孔と、
前記貫通孔の周囲を覆い、前記プラズマ生成室の外壁面と前記支持ベースとの間の空間を気密に保ち、前記支持ベースと前記プラズマ生成室の外壁間との距離を可変にする伸縮部材とを備えたイオン源。 An ion source having a permanent magnet around the plasma generation chamber,
A cathode for supplying electrons into the plasma generation chamber;
A support base supporting the cathode and disposed outside the plasma generation chamber;
A through hole formed in the wall of the plasma generation chamber and through which the cathode is inserted;
A telescopic member that covers the periphery of the through hole, keeps the space between the outer wall surface of the plasma generation chamber and the support base airtight, and makes the distance between the support base and the outer wall of the plasma generation chamber variable. Ion source with 前記プラズマ生成室内に供給されるイオン化ガスは腐食性ガスである請求項１記載のイオン源。   The ion source according to claim 1, wherein the ionized gas supplied into the plasma generation chamber is a corrosive gas. 前記カソードは複数あり、少なくとも１つのカソードは他のカソードに比べて前記プラズマ生成室内への突出量が異なっていて、当該カソードの先端部は前記プラズマ生成室内でプラズマが生成される領域外に配置される請求項１又は２に記載のイオン源。 There are a plurality of the cathodes, and at least one of the cathodes has a different amount of protrusion into the plasma generation chamber than the other cathodes, and the tip of the cathode is disposed outside the region where plasma is generated in the plasma generation chamber. The ion source according to claim 1 or 2 . 前記支持ベースの移動によって前記カソードの先端部が前記プラズマ生成室外に配置可能であって、前記伸縮部材と前記プラズマ生成室の外壁面との間に前記プラズマ生成室の貫通孔を開閉する弁体が設けられている請求項１乃至３のいずれか１項に記載のイオン源。 A valve body that can dispose the tip of the cathode outside the plasma generation chamber by the movement of the support base and opens and closes a through hole of the plasma generation chamber between the expandable member and the outer wall surface of the plasma generation chamber. The ion source according to any one of claims 1 to 3 , wherein the ion source is provided.
JP2014204446A 2014-10-03 2014-10-03 Ion source Active JP6439966B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014204446A JP6439966B2 (en) 2014-10-03 2014-10-03 Ion source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014204446A JP6439966B2 (en) 2014-10-03 2014-10-03 Ion source

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2016117597A Division JP6268680B2 (en) 2016-06-14 2016-06-14 Operation method of ion source

Publications (3)

Publication Number Publication Date
JP2016076322A JP2016076322A (en) 2016-05-12
JP2016076322A5 true JP2016076322A5 (en) 2017-03-16
JP6439966B2 JP6439966B2 (en) 2018-12-19

Family

ID=55951582

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014204446A Active JP6439966B2 (en) 2014-10-03 2014-10-03 Ion source

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JP (1) JP6439966B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6455494B2 (en) * 2016-09-15 2019-01-23 日新イオン機器株式会社 Ion source
JP7437611B2 (en) 2020-06-11 2024-02-26 日新イオン機器株式会社 ion source

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS581954Y2 (en) * 1977-10-18 1983-01-13 日新電機株式会社 ion generator
JPS62272440A (en) * 1986-05-21 1987-11-26 Mitsubishi Electric Corp Ion source for ion implanting apparatus
FR2616587B1 (en) * 1987-06-12 1989-11-24 Realisations Nucleaires Et SOURCE OF IONS WITH FOUR ELECTRODES
JPH077640B2 (en) * 1988-12-23 1995-01-30 日新電機株式会社 Ion source
JPH0574396A (en) * 1991-09-18 1993-03-26 Hitachi Ltd Heater device with load locking mechanism
JP3254819B2 (en) * 1993-06-10 2002-02-12 石川島播磨重工業株式会社 Ion source device
JPH07169427A (en) * 1993-12-14 1995-07-04 Nissin Electric Co Ltd Ion source device
JP3463896B2 (en) * 1994-11-15 2003-11-05 理化学研究所 Ion beam generator
JP3769444B2 (en) * 1997-11-28 2006-04-26 セイコーエプソン株式会社 Ion implanter
JP3518320B2 (en) * 1998-02-27 2004-04-12 日新電機株式会社 Ion source and filament replacement method
JP2000001780A (en) * 1998-06-17 2000-01-07 Japan Aviation Electronics Ind Ltd Ion generating device
JP2006019048A (en) * 2004-06-30 2006-01-19 Toshiba Corp Manufacturing method of ion implantation device and semiconductor device
GB0505856D0 (en) * 2005-03-22 2005-04-27 Applied Materials Inc Cathode and counter-cathode arrangement in an ion source
JP2008234895A (en) * 2007-03-19 2008-10-02 Ihi Corp Ion source and its filament exchange method
JP2008246380A (en) * 2007-03-30 2008-10-16 Ihi Corp Vacuum processing apparatus and its maintenance method
JP5903864B2 (en) * 2011-12-14 2016-04-13 セイコーエプソン株式会社 Ion milling equipment

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