WO2017100965A1 - Radio frequency power supply for laser - Google Patents

Radio frequency power supply for laser Download PDF

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Publication number
WO2017100965A1
WO2017100965A1 PCT/CN2015/000904 CN2015000904W WO2017100965A1 WO 2017100965 A1 WO2017100965 A1 WO 2017100965A1 CN 2015000904 W CN2015000904 W CN 2015000904W WO 2017100965 A1 WO2017100965 A1 WO 2017100965A1
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WIPO (PCT)
Prior art keywords
microstrip
power
synthesis
circuit
total
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PCT/CN2015/000904
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French (fr)
Chinese (zh)
Inventor
徐海军
Original Assignee
徐海军
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Application filed by 徐海军 filed Critical 徐海军
Priority to PCT/CN2015/000904 priority Critical patent/WO2017100965A1/en
Publication of WO2017100965A1 publication Critical patent/WO2017100965A1/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02Constructional details
    • H01S3/03Constructional details of gas laser discharge tubes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09Processes or apparatus for excitation, e.g. pumping
    • H01S3/097Processes or apparatus for excitation, e.g. pumping by gas discharge of a gas laser

Definitions

  • the present invention relates to a radio frequency power supply for a laser, and more particularly to the field of lasers.
  • Gas lasers especially carbon dioxide gas lasers, use a radio frequency power source to generate a laser for the discharge of a gas in a laser.
  • the role of the RF power supply is to generate high-frequency excitation current.
  • the traditional RF power supply uses common heat sinks and structures. Generally, it is air-cooled or single-sided water-cooled. Therefore, high-power lasers are placed separately from the RF power supply. This requires multiple enclosures, increased in size, and increased in cost, and requires an RF cable to be connected between the laser and the RF power supply. This RF cable generates heat when operating at high power and generates additional Energy loss.
  • the internal RF power synthesizers of commonly used lasers generally use a magnetic ring transformer or a discrete inductor and capacitor to form a synthesizer.
  • a radio frequency power synthesizer is relatively bulky because it needs to be connected to an additional component on the composite circuit board.
  • the efficiency of the micro-band RF power synthesizer will be low, so it will generate heat and equipment that needs to be cooled.
  • the advantage of the microstrip circuit is that it does not require additional components, and it has high efficiency and low heat generation. Even if it is heated, it can be carried away by the circuit board to conduct heat to the underground heat sink, without the need for an air-cooled heat dissipation method. Summary of the invention
  • an object of the present invention is to provide an RF power supply system with high power density and small size and capable of being mounted into a laser.
  • a radio frequency power supply for a laser comprising a first power amplification module, a second power amplification module, a third power amplification module, a fourth power amplification module, a fifth power amplification module, a sixth power amplification module, and a first microstrip Power synthesis circuit, second microstrip power synthesis circuit, third power synthesis microstrip circuit, RF output matching circuit and water cooling radiator; wherein, the first power amplification module, the second power amplification module, the third power amplification module, Four power amplification modules, a fifth power amplification module, and a sixth power amplification module, the six modules simultaneously give an RF power current of 81.36 Mhz, which is transmitted to the first power synthesis microstrip circuit through the electrodes, and the third power synthesis microstrip a circuit, the first power synthesis microstrip circuit and the third power synthesis microstrip circuit, each of the signals output by the three power amplification modules are combined into one path, and outputted to an input end
  • a power synthesis microstrip circuit comprising: a first microstrip transmission portion; an RF current is input from three input terminals, and the RF current is finally aggregated and synthesized on the output end through the microstrip line; wherein the first microstrip transmission portion Is a width of 3. 2mm,
  • the 237mm copper-plated line is formed by connecting three straight lines of 69.6 mm long and two semicircles having a radius of 4.5 mm.
  • a power synthesis microstrip circuit comprising: a second microstrip transmission portion; an RF current is input from three input terminals, and the RF current is finally aggregated and synthesized on the output end through the microstrip line; wherein the second microstrip transmission portion It is a copper-clad line having a width of 3. 2 mm and a length of 186.3 mm, wherein four straight lines of 36 mm length are connected with three semi-circles having a radius of 4. 5 mm.
  • a power synthesis microstrip circuit comprising: a third microstrip transmission portion; an RF current is input from two input terminals, and the RF current is finally aggregated and synthesized on the output end through the microstrip line; wherein the third microstrip transmission portion It is a copper-clad line with a width of 4 mm and a length of 398 mm, in which nine straight lines of 34 faces are connected with eight semi-circles with a radius of 3.67 mm.
  • An output-matching microstrip circuit is characterized in that: the RF current is input to the matching end, and is outputted from the output end to the laser after being matched by the capacitor, wherein the fourth microstrip transmission portion is a width of 8 mm and a length of 51.5 mm. Copper lines, when the RF current passes, it plays a matching role.
  • Figure 1 is a schematic view showing the system connection of the present invention
  • FIG. 3 is a detailed wiring diagram of the power combining microstrip circuit 9 of the present invention.
  • FIG. 4 is a detailed wiring diagram of the power combining microstrip circuit 8 of the present invention.
  • FIG. 5 is a detailed wiring diagram of the output matching microstrip circuit 10 of the present invention.
  • Figure 6 is a detailed wiring diagram of the first total microstrip synthesis transmission section 29;
  • FIG. 7 is a detailed wiring diagram of the second total microstrip synthesis transmission section 30;
  • Figure 8 is a detailed wiring diagram of the third total microstrip synthesis transmission section 31;
  • Figure 9 is a detailed wiring diagram of the fourth total microstrip synthesis transmission section 32;
  • Figure 10 is a detailed wiring diagram of the fifth total microstrip synthesis transmission section 33;
  • Figure 11 is a detailed wiring diagram of the sixth total microstrip synthesis transmission section 34;
  • Figure 12 is a detailed wiring diagram of the seventh total microstrip synthesis transmission section 35;
  • FIG. 13 is a detailed wiring diagram of the eighth total microstrip synthesis transmission portion 36; detailed description:
  • the third amplification module 3, the fourth power amplification module 4, the fifth power amplification module 5, and the sixth power amplification module 6, the six modules simultaneously give an RF power current of 81.36 Mhz, which is transmitted to the first power synthesis micro through the electrodes.
  • the third power synthesis microstrip circuit 9 the first power synthesis microstrip circuit 7 and the third power synthesis microstrip circuit 9, each of the signals output by the three power amplification modules are combined into one way, and the output is sent to An input end of the second power synthesis microstrip circuit 8, the second power synthesis microstrip circuit 8 synthesizes two input power currents into one path and passes through the electrodes Microstrip matching circuit to the output 10, via the output matching output carbon dioxide laser to match the microstrip circuit.
  • the power synthesis microstrip circuit is shown in Figure 7.
  • the RF current is input from the input terminals 12, 13, 14 and the RF current is finally aggregated through the microstrip line to the output terminal 15.
  • the principle is that the RF current passes through a specific width and After the length of the microstrip is applied to the copper wire, it can be synthesized together, wherein the role of the microstrip is to match and reduce the loss.
  • the first microstrip transmission portion 25 is a copper-plated circuit having a width of 3.2 ram and a length of 237 mm, wherein three straight lines of 69.6 mm long are connected with two semicircles having a radius of 4. 5 mm.
  • the microstrip transmission part is a key part, so the design can reduce the volume and reduce the loss.
  • the principle is that RF current flows through these microstrip lines to maintain the same phase at the output and is evenly output to the output.
  • the power synthesis microstrip circuit 7 is composed of three total microstrip composite transmission sections, all of which are a microstrip copper wire having a width of 3.2 mm and a length of 557 mm, the difference being that the size of the circuit board is gone. The positions are different, and the connection order is different.
  • the first total microstrip synthesis transmission portion 29 and the second total microstrip synthesis transmission portion 30 are separated from the microstrip input end of the third total microstrip synthesis transmission portion 31. The outputs are connected together.
  • microstrip synthesis lines The design benefit of all microstrip synthesis lines is that the current can be averaged into one way and the phase of each line will not cancel each other out, no additional components are needed, and the efficiency is high and the heat is small, even if it is hot. It can also be carried away by the circuit board to conduct heat to the underground heat sink.
  • the power synthesis microstrip circuit is shown in FIG. 9.
  • the RF current is input from the input terminals 16, 17, 18, and the RF current is finally aggregated and synthesized on the output terminal 19 through the microstrip line, wherein the principle is that the RF current passes through a specific width and After the length of the microstrip is applied to the copper wire, it can be synthesized together, wherein the role of the microstrip is to match and reduce the loss.
  • the second microstrip transmission portion 26 is a copper-plated circuit having a width of 3.2 mm and a length of 186.3 inches, wherein four straight lines of 36 mm length are connected with three semicircles having a radius of 4. 5 mm.
  • the microstrip transmission parts are all key parts, and the design can reduce the volume and reduce the loss.
  • the principle is that RF current flows through these microstrip lines to maintain the same phase at the output and is evenly output to the output.
  • the power synthesis microstrip circuit 9 is composed of three total microstrip composite transmission sections, each of which is a microstrip copper wire having a width of 3.2 ram and a length of 557 mm, which is distinguished by the size of the circuit board. The positions are different, and the connection order is different.
  • the fourth total microstrip synthesis transmission unit 32 and the fifth total microstrip synthesis transmission unit 33 are separated from the microstrip input end of the sixth total microstrip synthesis transmission unit 34. The outputs are connected together.
  • microstrip synthesis lines The design benefit of all microstrip synthesis lines is that the current can be averaged into one way and the phase of each line will not cancel each other out, no additional components are needed, and the efficiency is high and the heat is small, even if it is hot. It can also be carried away by the circuit board to conduct heat to the underground heat sink.
  • the power synthesis microstrip circuit is shown in FIG. 8.
  • the RF current is input from the input terminals 20 and 21, and the RF current is finally aggregated and synthesized on the output terminal 22 through the microstrip line.
  • the principle is that the RF current passes through a specific width and length.
  • the third microstrip transmission portion 27 is a copper-clad line having a width of 4 mm and a length of 398 mm, wherein the three micro-band transmissions are formed by connecting nine straight lines of 34 mm length and eight semi-circles having a radius of 3.67 mm.
  • the parts are all key parts, so the design can reduce the volume and reduce the loss.
  • the principle is that RF current flows through these microstrip lines to maintain the same phase at the output and is evenly output to the output.
  • the power synthesis microstrip circuit 8 is composed of two total microstrip synthesis transmission sections, both of which are a microstrip copper wire with a width of 4 hidden and a length of 557 mra, the difference being the position of the board due to the size of the board. The difference is that the connection order is different.
  • the input of the seventh total microstrip synthesis transmission unit 35 is connected to the first total microstrip synthesis transmission unit 29 and the second total microstrip synthesis transmission unit 30 and the third total microstrip.
  • the microstrip output of the synthesis transmission section 31, and the microstrip input of the eighth total microstrip synthesis transmission section 36 is connected to the fourth total microstrip synthesis transmission section 32 and the fifth total microstrip synthesis transmission section 33 and the sixth total
  • the microstrip output end of the microstrip synthesis transmission section 34, the last seventh total microstrip synthesis transmission section 35 and the output end of the microstrip of the eighth total microstrip synthesis transmission section 36 are connected together, and the design of such a microstrip synthesis line.
  • the output matching microstrip circuit 10 the RF current is input from the 23 input to the matching terminal, and after being capacitively matched, the output is output from the output terminal 24 to the laser.
  • the fourth microstrip transmission portion 28 is a copper-clad line having a width of 8 mm and a length of 51.5 mm, which serves to match the radio frequency current.
  • the first total microstrip synthesis transmission portion 29 is a detailed wiring pattern, and the transmission portion is a microstrip copper wire having a width of 3.2 mm and a total length of 557 mm, wherein the line is composed of 10 straight lines and 6 radii. 5 ⁇ , 4 1/4 circle with a radius of 4. 5mm.
  • the second total microstrip synthesis transmission portion 30 is a detailed wiring pattern.
  • the transmission portion is a microstrip copper wire having a width of 3.2 mm and a total length of 557 mm, wherein the line is composed of 8 straight lines and 6 radii. 5mra semicircle, 3 1/4 circle with a radius of 4. 5mm.
  • the third total microstrip synthesis transmission portion 31 is a detailed wiring diagram, the transmission portion is a width of 3.2 mm, the total length of 557 5 ⁇ 1/4 ⁇
  • the microstrip copper wire which is composed of 11 straight lines and 9 radii of 4. 5mm semicircle, 2 1/4 circle with a radius of 4. 5mm.
  • the fourth total microstrip synthesis transmission portion 32 is a detailed wiring pattern, and the transmission portion is a microstrip copper wire having a width of 3.2 mm and a total length of 557 mm, wherein the ellipse is 11 straight lines and 9 radii are 4. 5 ⁇ , 2 1/4 circle with a radius of 4. 5mm.
  • the fifth total microstrip synthesis transmission portion 33 is a detailed wiring diagram, and the transmission portion is a microstrip copper wire having a width of 3.2 min and a total length of 557 mm, wherein the distance is 8 straight lines and 6 radii are 4. 5 ⁇ , 3 1/4 circle with a radius of 4. 5mm.
  • the sixth total microstrip synthesis transmission portion 34 is a detailed wiring diagram, and the transmission portion is a microstrip copper wire having a width of 3.2 mm and a total length of 557 mm, wherein the line is composed of 10 straight lines and 6 radii. 5mm semicircle, 4 1/4 circle with a radius of 4.5.
  • the seventh total microstrip synthesis transmission portion 35 is a detailed wiring diagram.
  • the transmission portion is a microstrip copper wire having a width of 4 mm and a total length of 557 mm, wherein the line is composed of 14 straight lines and 13 radii of 3.67 mm. , a 1/4 circle with a radius of 3.67mm.
  • the eighth total microstrip synthesis transmission portion 36 is a detailed wiring diagram, the transmission portion is a microstrip copper wire having a width of 4 cu., and a total length of 557 mm, which is composed of 14 straight lines and 6 radii of 3.67 ram. Semicircle, 9 1/4 circle with a radius of 3.67ram.

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Microwave Amplifiers (AREA)

Abstract

A radio frequency power supply for a laser, comprising a first power amplification module (1), a second power amplification module (2), a third power amplification module (3), a fourth power amplification module (4), a fifth power amplification module (5), a sixth power amplification module (6), a first microstrip power synthesising circuit (7), a second microstrip power synthesising circuit (8), a third microstrip power synthesising circuit (9), a radio frequency output matching circuit (10), and a water-cooled heat dissipation device (11). The six power amplification modules simultaneously supply 81.36 MHz of radio frequency power current, which is synthesised into one current by means of the three microstrip power synthesising circuits, then conveyed to the output matching microstrip circuit by means of electrodes and, after being matched through the output matching microstrip circuit, is outputted to a carbon dioxide laser.

Description

一种用于激光器的射频电源 技术领域  RF power supply for lasers
本发明涉及一种用于激光器的射频电源, 尤其涉及激光器领域。  The present invention relates to a radio frequency power supply for a laser, and more particularly to the field of lasers.
背景技术 Background technique
气体激光器, 特别是二氧化碳气体激光器都是运用射频电源对激光器中的气体放电产生 激光。 射频电源在其中的作用是产生高频率的激励电流, 而传统的射频电源均使用普通的散 热器和结构, 一般用风冷或单面水冷方式, 因此大功率的激光器都是与射频电源分开放置, 这样需要多个机壳, 体积增加了, 成本也增加了, 而且在激光器与射频电源间还需要一根射 频电缆进行连接, 而这根射频电缆在高功率工作的时候会发热而产生额外的能量损耗。 并且 常用的激光器内部的射频功率合成器一般都采用磁环变压器或用分立的电感电容组成合成 器, 这样的射频功率合成器因为要在合成线路板上悍接额外的元器件因此体积会相对大, 而 且效率相对微带的射频功率合成器会低, 因而会产生热量还需要配套散热的设备。 微带电路 的优点是不需要额外的元器件, 并且效率高发热小, 即使发热也能通过线路板把热量导到地 下的散热板带走, 无须附加风扇这种风冷的散热方式。 发明内容  Gas lasers, especially carbon dioxide gas lasers, use a radio frequency power source to generate a laser for the discharge of a gas in a laser. The role of the RF power supply is to generate high-frequency excitation current. The traditional RF power supply uses common heat sinks and structures. Generally, it is air-cooled or single-sided water-cooled. Therefore, high-power lasers are placed separately from the RF power supply. This requires multiple enclosures, increased in size, and increased in cost, and requires an RF cable to be connected between the laser and the RF power supply. This RF cable generates heat when operating at high power and generates additional Energy loss. Moreover, the internal RF power synthesizers of commonly used lasers generally use a magnetic ring transformer or a discrete inductor and capacitor to form a synthesizer. Such a radio frequency power synthesizer is relatively bulky because it needs to be connected to an additional component on the composite circuit board. And the efficiency of the micro-band RF power synthesizer will be low, so it will generate heat and equipment that needs to be cooled. The advantage of the microstrip circuit is that it does not require additional components, and it has high efficiency and low heat generation. Even if it is heated, it can be carried away by the circuit board to conduct heat to the underground heat sink, without the need for an air-cooled heat dissipation method. Summary of the invention
针对上述所述现有射频电源所存在的问题与不足之处, 本发明的目的是提供一款功率密 度高与体积小的并能安装进激光器的射频电源系统。  In view of the problems and deficiencies of the above-mentioned existing radio frequency power supply, an object of the present invention is to provide an RF power supply system with high power density and small size and capable of being mounted into a laser.
一种用于激光器的射频电源, 包括第一功率放大模块, 第二功率放大模块, 第三功率放 大模块, 第四功率放大模块, 第五功率放大模块, 第六功率放大模块, 第一微带功率合成电 路, 第二微带功率合成电路, 第三功率合成微带电路, 射频输出匹配电路和水冷散热器; 其 中, 第一功率放大模块, 第二功率放大模块, 第三功率放大模块, 第四功率放大模块, 第五 功率放大模块, 第六功率放大模块, 这六个模块同时给出 81. 36Mhz的射频功率电流, 通过电 极传输给第一功率合成微带电路, 第三功率合成微带电路, 所述第一功率合成微带电路和第 三功率合成微带电路, 各将三路功率放大模块输出的信号合成为一路, 输出给到第二功率合 成微带电路的输入端, 所述第二功率合成微带电路把两路输入功率电流合成为一路, 并通过 电极输送给输出匹配微带电路 , 经过所述输出匹配微带电路匹配后输出到二氧化碳激光器。  A radio frequency power supply for a laser, comprising a first power amplification module, a second power amplification module, a third power amplification module, a fourth power amplification module, a fifth power amplification module, a sixth power amplification module, and a first microstrip Power synthesis circuit, second microstrip power synthesis circuit, third power synthesis microstrip circuit, RF output matching circuit and water cooling radiator; wherein, the first power amplification module, the second power amplification module, the third power amplification module, Four power amplification modules, a fifth power amplification module, and a sixth power amplification module, the six modules simultaneously give an RF power current of 81.36 Mhz, which is transmitted to the first power synthesis microstrip circuit through the electrodes, and the third power synthesis microstrip a circuit, the first power synthesis microstrip circuit and the third power synthesis microstrip circuit, each of the signals output by the three power amplification modules are combined into one path, and outputted to an input end of the second power synthesis microstrip circuit, The second power synthesis microstrip circuit combines two input power currents into one path and delivers them through electrodes The output matching microstrip circuit is matched to the carbon dioxide laser after being matched by the output matching microstrip circuit.
一种功率合成微带电路, 其特征在于: 包括第一微带传输部; 射频电流从三个输入端输 入, 射频电流经过微带线最终聚集合成到输出端上; 其中第一微带传输部是一根宽 3. 2mm, 长度 237mm的敷铜线路,其中由 3根 69. 6mm长的直线与 2个半径为 4. 5mm的半圆首尾相接而 成。 A power synthesis microstrip circuit, comprising: a first microstrip transmission portion; an RF current is input from three input terminals, and the RF current is finally aggregated and synthesized on the output end through the microstrip line; wherein the first microstrip transmission portion Is a width of 3. 2mm, The 237mm copper-plated line is formed by connecting three straight lines of 69.6 mm long and two semicircles having a radius of 4.5 mm.
一种功率合成微带电路, 其特征在于: 包括第二微带传输部; 射频电流从三个输入端输 入, 射频电流经过微带线最终聚集合成到输出端上; 其中第二微带传输部是一根宽 3. 2mm, 长度 186. 3mm的敷铜线路,其中由 4根 36mm长的直线与 3个半径为 4. 5mm的半圆首尾相接而 成。  A power synthesis microstrip circuit, comprising: a second microstrip transmission portion; an RF current is input from three input terminals, and the RF current is finally aggregated and synthesized on the output end through the microstrip line; wherein the second microstrip transmission portion It is a copper-clad line having a width of 3. 2 mm and a length of 186.3 mm, wherein four straight lines of 36 mm length are connected with three semi-circles having a radius of 4. 5 mm.
一种功率合成微带电路, 其特征在于: 包括第三微带传输部; 射频电流从两个输入端输 入, 射频电流经过微带线最终聚集合成到输出端上; 其中第三微带传输部是一根宽 4mm, 长 度 398mm的敷铜线路,其中由 9根 34面长的直线与 8个半径为 3. 67mm的半圆首尾相接而成。  A power synthesis microstrip circuit, comprising: a third microstrip transmission portion; an RF current is input from two input terminals, and the RF current is finally aggregated and synthesized on the output end through the microstrip line; wherein the third microstrip transmission portion It is a copper-clad line with a width of 4 mm and a length of 398 mm, in which nine straight lines of 34 faces are connected with eight semi-circles with a radius of 3.67 mm.
一种输出匹配微带电路, 其特征在于: 射频电流输入进匹配端, 经过电容电感匹配后从 输出端输出到激光器, 其中第四微带传输部是一根宽 8mm, 长度 51. 5mm的敷铜线路, 射频电 流经过时起到匹配的作用。 附图说明:  An output-matching microstrip circuit is characterized in that: the RF current is input to the matching end, and is outputted from the output end to the laser after being matched by the capacitor, wherein the fourth microstrip transmission portion is a width of 8 mm and a length of 51.5 mm. Copper lines, when the RF current passes, it plays a matching role. BRIEF DESCRIPTION OF THE DRAWINGS:
图 1为本发明的系统连接示意图;  Figure 1 is a schematic view showing the system connection of the present invention;
图 2为本发明的功率合成微带电路 7的详细布线图;  2 is a detailed wiring diagram of the power combining microstrip circuit 7 of the present invention;
图 3为本发明的功率合成微带电路 9的详细布线图;  3 is a detailed wiring diagram of the power combining microstrip circuit 9 of the present invention;
图 4为本发明的功率合成微带电路 8的详细布线图;  4 is a detailed wiring diagram of the power combining microstrip circuit 8 of the present invention;
图 5为本发明的输出匹配微带电路 10的详细布线图;  Figure 5 is a detailed wiring diagram of the output matching microstrip circuit 10 of the present invention;
图 6为第一总微带合成传输部 29详细布线图;  Figure 6 is a detailed wiring diagram of the first total microstrip synthesis transmission section 29;
图 7为第二总微带合成传输部 30详细布线图;  Figure 7 is a detailed wiring diagram of the second total microstrip synthesis transmission section 30;
图 8为第三总微带合成传输部 31详细布线图;  Figure 8 is a detailed wiring diagram of the third total microstrip synthesis transmission section 31;
图 9为第四总微带合成传输部 32详细布线图;  Figure 9 is a detailed wiring diagram of the fourth total microstrip synthesis transmission section 32;
图 10为第五总微带合成传输部 33详细布线图;  Figure 10 is a detailed wiring diagram of the fifth total microstrip synthesis transmission section 33;
图 11为第六总微带合成传输部 34详细布线图;  Figure 11 is a detailed wiring diagram of the sixth total microstrip synthesis transmission section 34;
图 12为第七总微带合成传输部 35详细布线图;  Figure 12 is a detailed wiring diagram of the seventh total microstrip synthesis transmission section 35;
图 13为第八总微带合成传输部 36详细布线图; 具体实施方式: Figure 13 is a detailed wiring diagram of the eighth total microstrip synthesis transmission portion 36; detailed description:
下面结合具体实施例和附图对本发明作进一步说明书, 但不应以此限制本发明的保护范 围。  The invention is further described in conjunction with the specific embodiments and the accompanying drawings, but should not be construed as limiting the scope of the invention.
参考图 1, 第一功率放大模块 1, 第二功率放大模块 2, 第三功率放大模块 3, 第四功率 放大模块 4, 第五功率放大模块 5, 第六功率放大模块 6, 第一微带功率合成电路 7, 第二微 带功率合成电路 8, 第三功率合成微带电路 9, 射频输出匹配电路 10, 水冷散热器 11, 其中, 第一功率放大模块 1, 第二功率放大模块 2, 第三放大模块 3, 第四功率放大模块 4, 第五功 率放大模块 5, 第六功率放大模块 6, 六个模块同时给出 81. 36Mhz的射频功率电流, 通过电 极传输给第一功率合成微带电路 7, 第三功率合成微带电路 9, 所述第一功率合成微带电路 7 和第三功率合成微带电路 9, 各将三路功率放大模块输出的信号合成为一路, 输出给到第二 功率合成微带电路 8的输入端, 所述第二功率合成微带电路 8把两路输入功率电流合成为一 路, 并通过电极输送给输出匹配微带电路 10 , 经过所述输出匹配微带电路匹配后输出到二 氧化碳激光器。  Referring to FIG. 1, a first power amplifying module 1, a second power amplifying module 2, a third power amplifying module 3, a fourth power amplifying module 4, a fifth power amplifying module 5, a sixth power amplifying module 6, and a first microstrip a power combining circuit 7, a second microstrip power combining circuit 8, a third power combining microstrip circuit 9, a radio frequency output matching circuit 10, a water cooling radiator 11, wherein the first power amplifying module 1 and the second power amplifying module 2 The third amplification module 3, the fourth power amplification module 4, the fifth power amplification module 5, and the sixth power amplification module 6, the six modules simultaneously give an RF power current of 81.36 Mhz, which is transmitted to the first power synthesis micro through the electrodes. With the circuit 7, the third power synthesis microstrip circuit 9, the first power synthesis microstrip circuit 7 and the third power synthesis microstrip circuit 9, each of the signals output by the three power amplification modules are combined into one way, and the output is sent to An input end of the second power synthesis microstrip circuit 8, the second power synthesis microstrip circuit 8 synthesizes two input power currents into one path and passes through the electrodes Microstrip matching circuit to the output 10, via the output matching output carbon dioxide laser to match the microstrip circuit.
参考图 2, 图中为功率合成微带电路图 7, 射频电流从输入端 12, 13, 14输入, 射频电 流经过微带线最终聚集合成到输出端 15上,其中原理为射频电流通过特定宽度和长度的微带 敷铜线后, 能合成在一起, 其中微带的作用是匹配和减少损耗。第一微带传输部 25是一根宽 3. 2ram, 长度 237mm的敷铜线路, 其中由 3根 69. 6mm长的直线与 2个半径为 4. 5mm的半圆首 尾相接而成, 以上所述微带传输部都是关键部位,这样设计能起到缩小体积减小损耗的作用。 原理是射频电流流过这些微带线后能在输出端保持同样的相位, 并均匀地输出到输出端。 功 率合成微带电路 7是由三个总微带合成传输部组成, 这三个部分都是一根宽 3. 2mm,长 557mm 的微带铜线, 其区别在于因为电路板的尺寸而走的位置不一样, 还有就是连接顺序不一样, 第一总微带合成传输部 29和第二总微带合成传输部 30与第三总微带合成传输部 31的微带输 入端是分开的, 输出则接到一起, 所有的微带合成线路的设计好处是能把电流平均地合成为 一路并保持各线路的相位不会互相抵消, 不需要额外的元器件, 并且效率高发热小, 即使发 热也能通过线路板把热量导到地下的散热板带走。  Referring to Figure 2, the power synthesis microstrip circuit is shown in Figure 7. The RF current is input from the input terminals 12, 13, 14 and the RF current is finally aggregated through the microstrip line to the output terminal 15. The principle is that the RF current passes through a specific width and After the length of the microstrip is applied to the copper wire, it can be synthesized together, wherein the role of the microstrip is to match and reduce the loss. The first microstrip transmission portion 25 is a copper-plated circuit having a width of 3.2 ram and a length of 237 mm, wherein three straight lines of 69.6 mm long are connected with two semicircles having a radius of 4. 5 mm. The microstrip transmission part is a key part, so the design can reduce the volume and reduce the loss. The principle is that RF current flows through these microstrip lines to maintain the same phase at the output and is evenly output to the output. The power synthesis microstrip circuit 7 is composed of three total microstrip composite transmission sections, all of which are a microstrip copper wire having a width of 3.2 mm and a length of 557 mm, the difference being that the size of the circuit board is gone. The positions are different, and the connection order is different. The first total microstrip synthesis transmission portion 29 and the second total microstrip synthesis transmission portion 30 are separated from the microstrip input end of the third total microstrip synthesis transmission portion 31. The outputs are connected together. The design benefit of all microstrip synthesis lines is that the current can be averaged into one way and the phase of each line will not cancel each other out, no additional components are needed, and the efficiency is high and the heat is small, even if it is hot. It can also be carried away by the circuit board to conduct heat to the underground heat sink.
参考图 3, 图中为功率合成微带电路图 9, 射频电流从输入端 16, 17, 18输入, 射频电 流经过微带线最终聚集合成到输出端 19上,其中原理为射频电流通过特定宽度和长度的微带 敷铜线后, 能合成在一起, 其中微带的作用是匹配和减少损耗。第二微带传输部 26是一根宽 3. 2mm, 长度 186. 3匪的敷铜线路, 其中由 4根 36mm长的直线与 3个半径为 4. 5mm的半圆首 尾相接而成, 以上所述微带传输部都是关键部位, 这样设计能起到缩小体积减小损耗的作用。 原理是射频电流流过这些微带线后能在输出端保持同样的相位, 并均匀地输出到输出端。 功 率合成微带电路 9是由三个总微带合成传输部组成,这三个部分都是一根宽 3. 2ram,长 557mm 的微带铜线, 其区别在于因为电路板的尺寸而走的位置不一样, 还有就是连接顺序不一样, 第四总微带合成传输部 32和第五总微带合成传输部 33与第六总微带合成传输部 34的微带输 入端是分开的, 输出则接到一起, 所有的微带合成线路的设计好处是能把电流平均地合成为 一路并保持各线路的相位不会互相抵消, 不需要额外的元器件, 并且效率高发热小, 即使发 热也能通过线路板把热量导到地下的散热板带走。 Referring to FIG. 3, the power synthesis microstrip circuit is shown in FIG. 9. The RF current is input from the input terminals 16, 17, 18, and the RF current is finally aggregated and synthesized on the output terminal 19 through the microstrip line, wherein the principle is that the RF current passes through a specific width and After the length of the microstrip is applied to the copper wire, it can be synthesized together, wherein the role of the microstrip is to match and reduce the loss. The second microstrip transmission portion 26 is a copper-plated circuit having a width of 3.2 mm and a length of 186.3 inches, wherein four straight lines of 36 mm length are connected with three semicircles having a radius of 4. 5 mm. The microstrip transmission parts are all key parts, and the design can reduce the volume and reduce the loss. The principle is that RF current flows through these microstrip lines to maintain the same phase at the output and is evenly output to the output. The power synthesis microstrip circuit 9 is composed of three total microstrip composite transmission sections, each of which is a microstrip copper wire having a width of 3.2 ram and a length of 557 mm, which is distinguished by the size of the circuit board. The positions are different, and the connection order is different. The fourth total microstrip synthesis transmission unit 32 and the fifth total microstrip synthesis transmission unit 33 are separated from the microstrip input end of the sixth total microstrip synthesis transmission unit 34. The outputs are connected together. The design benefit of all microstrip synthesis lines is that the current can be averaged into one way and the phase of each line will not cancel each other out, no additional components are needed, and the efficiency is high and the heat is small, even if it is hot. It can also be carried away by the circuit board to conduct heat to the underground heat sink.
参考图 4, 图中为功率合成微带电路图 8, 射频电流从输入端 20, 21输入, 射频电流经 过微带线最终聚集合成到输出端 22上,其中原理为射频电流通过特定宽度和长度的微带敷铜 线后,能合成在一起,其中微带的作用是匹配和减少损耗。第三微带传输部 27是一根宽 4mm, 长度 398mm的敷铜线路, 其中由 9根 34mm长的直线与 8个半径为 3. 67mm的半圆首尾相接而 成, 以上所述微带传输部都是关键部位, 这样设计能起到缩小体积减小损耗的作用。 原理是 射频电流流过这些微带线后能在输出端保持同样的相位, 并均匀地输出到输出端。 功率合成 微带电路 8是由两个总微带合成传输部组成, 这两个部分都是一根宽 4隱, 长 557mra的微带 铜线, 其区别在于因为电路板的尺寸而走的位置不一样, 还有就是连接顺序不一样, 第七总 微带合成传输部 35的输入接的是第一总微带合成传输部 29和第二总微带合成传输部 30与第 三总微带合成传输部 31的微带输出端, 而第八总微带合成传输部 36的微带输入接的是第四 总微带合成传输部 32和第五总微带合成传输部 33与第六总微带合成传输部 34的微带输出 端,最后第七总微带合成传输部 35与第八总微带合成传输部 36的微带的输出端连接到一起, 这样的微带合成线路的设计好处是能把电流平均地合成为一路并保持各线路的相位不会互相 抵消, 不需要额外的元器件, 并且效率高发热小, 即使发热也能通过线路板把热量导到地下 的散热板带走。  Referring to FIG. 4, the power synthesis microstrip circuit is shown in FIG. 8. The RF current is input from the input terminals 20 and 21, and the RF current is finally aggregated and synthesized on the output terminal 22 through the microstrip line. The principle is that the RF current passes through a specific width and length. After the microstrip is coated with copper wire, it can be synthesized together, wherein the role of the microstrip is to match and reduce the loss. The third microstrip transmission portion 27 is a copper-clad line having a width of 4 mm and a length of 398 mm, wherein the three micro-band transmissions are formed by connecting nine straight lines of 34 mm length and eight semi-circles having a radius of 3.67 mm. The parts are all key parts, so the design can reduce the volume and reduce the loss. The principle is that RF current flows through these microstrip lines to maintain the same phase at the output and is evenly output to the output. The power synthesis microstrip circuit 8 is composed of two total microstrip synthesis transmission sections, both of which are a microstrip copper wire with a width of 4 hidden and a length of 557 mra, the difference being the position of the board due to the size of the board. The difference is that the connection order is different. The input of the seventh total microstrip synthesis transmission unit 35 is connected to the first total microstrip synthesis transmission unit 29 and the second total microstrip synthesis transmission unit 30 and the third total microstrip. The microstrip output of the synthesis transmission section 31, and the microstrip input of the eighth total microstrip synthesis transmission section 36 is connected to the fourth total microstrip synthesis transmission section 32 and the fifth total microstrip synthesis transmission section 33 and the sixth total The microstrip output end of the microstrip synthesis transmission section 34, the last seventh total microstrip synthesis transmission section 35 and the output end of the microstrip of the eighth total microstrip synthesis transmission section 36 are connected together, and the design of such a microstrip synthesis line The advantage is that the current can be averaged into one way and the phase of each line will not cancel each other, no additional components are needed, and the efficiency is high and the heat is small. Even if the heat is generated, the heat can be led to the underground heat sink through the circuit board. go.
参考图 5, 输出匹配微带电路 10, 射频电流从 23输入进匹配端, 经过电容电感匹配后从 输出端 24输出到激光器。 第四微带传输部 28是一根宽 8mm, 长度 51. 5mm的敷铜线路, 射频 电流经过时起到匹配的作用。  Referring to Figure 5, the output matching microstrip circuit 10, the RF current is input from the 23 input to the matching terminal, and after being capacitively matched, the output is output from the output terminal 24 to the laser. The fourth microstrip transmission portion 28 is a copper-clad line having a width of 8 mm and a length of 51.5 mm, which serves to match the radio frequency current.
参考图 6,第一总微带合成传输部 29详细布线图,所述传输部是一根宽 3. 2mm,总长 557mm 的微带铜线,其中是由 10根直线与 6个半径为 4. 5mm半圆, 4个半径为 4. 5mm的 1/4圆组成。  Referring to Fig. 6, the first total microstrip synthesis transmission portion 29 is a detailed wiring pattern, and the transmission portion is a microstrip copper wire having a width of 3.2 mm and a total length of 557 mm, wherein the line is composed of 10 straight lines and 6 radii. 5毫米半圆, 4 1/4 circle with a radius of 4. 5mm.
参考图 7,第二总微带合成传输部 30详细布线图,所述传输部是一根宽 3. 2mm,总长 557mm 的微带铜线, 其中是由 8根直线与 6个半径为 4. 5mra半圆, 3个半径为 4. 5mm的 1/4圆组成。  Referring to Fig. 7, the second total microstrip synthesis transmission portion 30 is a detailed wiring pattern. The transmission portion is a microstrip copper wire having a width of 3.2 mm and a total length of 557 mm, wherein the line is composed of 8 straight lines and 6 radii. 5mra semicircle, 3 1/4 circle with a radius of 4. 5mm.
参考图 8,第三总微带合成传输部 31详细布线图,所述传输部是一根宽 3. 2mm,总长 557皿 的微带铜线,其中是由 11根直线与 9个半径为 4. 5mm半圆, 2个半径为 4. 5mm的 1/4圆组成。 参考图 9,第四总微带合成传输部 32详细布线图,所述传输部是一根宽 3. 2mm,总长 557mm 的微带铜线,其中是由 11根直线与 9个半径为 4. 5mm半圆, 2个半径为 4. 5mm的 1/4圆组成。 Referring to Figure 8, the third total microstrip synthesis transmission portion 31 is a detailed wiring diagram, the transmission portion is a width of 3.2 mm, the total length of 557 5毫米的1/4圆组成。 The microstrip copper wire, which is composed of 11 straight lines and 9 radii of 4. 5mm semicircle, 2 1/4 circle with a radius of 4. 5mm. Referring to Fig. 9, the fourth total microstrip synthesis transmission portion 32 is a detailed wiring pattern, and the transmission portion is a microstrip copper wire having a width of 3.2 mm and a total length of 557 mm, wherein the ellipse is 11 straight lines and 9 radii are 4. 5毫米半圆, 2 1/4 circle with a radius of 4. 5mm.
参考图 10, 第五总微带合成传输部 33详细布线图, 所述传输部是一根宽 3. 2min, 总长 557mm的微带铜线,其中是由 8根直线与 6个半径为 4. 5隱半圆, 3个半径为 4. 5mm的 1/4圆 组成。  Referring to FIG. 10, the fifth total microstrip synthesis transmission portion 33 is a detailed wiring diagram, and the transmission portion is a microstrip copper wire having a width of 3.2 min and a total length of 557 mm, wherein the distance is 8 straight lines and 6 radii are 4. 5 隐半圆, 3 1/4 circle with a radius of 4. 5mm.
参考图 11, 第六总微带合成传输部 34详细布线图, 所述传输部是一根宽 3. 2mm, 总长 557mm的微带铜线, 其中是由 10根直线与 6个半径为 4. 5mm半圆, 4个半径为 4. 5面的 1/4 圆组成。  Referring to Fig. 11, the sixth total microstrip synthesis transmission portion 34 is a detailed wiring diagram, and the transmission portion is a microstrip copper wire having a width of 3.2 mm and a total length of 557 mm, wherein the line is composed of 10 straight lines and 6 radii. 5mm semicircle, 4 1/4 circle with a radius of 4.5.
参考图 12,第七总微带合成传输部 35详细布线图,所述传输部是一根宽 4mm,总长 557mm 的微带铜线, 其中是由 14根直线与 13个半径为 3. 67mm半圆, 1个半径为 3. 67mm的 1/4圆 组成。  Referring to FIG. 12, the seventh total microstrip synthesis transmission portion 35 is a detailed wiring diagram. The transmission portion is a microstrip copper wire having a width of 4 mm and a total length of 557 mm, wherein the line is composed of 14 straight lines and 13 radii of 3.67 mm. , a 1/4 circle with a radius of 3.67mm.
参考图 13,第八总微带合成传输部 36详细布线图,所述传输部是一根宽 4皿,总长 557mm 的微带铜线, 其中是由 14根直线与 6个半径为 3. 67ram半圆, 9个半径为 3. 67ram的 1/4圆组 成。  Referring to Fig. 13, the eighth total microstrip synthesis transmission portion 36 is a detailed wiring diagram, the transmission portion is a microstrip copper wire having a width of 4 cu., and a total length of 557 mm, which is composed of 14 straight lines and 6 radii of 3.67 ram. Semicircle, 9 1/4 circle with a radius of 3.67ram.

Claims

权 利 要 求 书 Claim
1 . 一种用于激光器的射频电源, 其特征在于: 包括第一功率放大模块, 第二功率放大模块, 第三功率放大模块, 第四功率放大模块, 第五功率放大模块, 第六功率放大模块, 第一微带 功率合成电路, 第二微带功率合成电路, 第三功率合成微带电路, 射频输出匹配电路和水冷 散热器; 其中, 第一功率放大模块, 第二功率放大模块, 第三功率放大模块, 第四功率放大 模块, 第五功率放大模块, 第六功率放大模块, 这六个模块同时给出 81. 36Mhz的射频功率电 流, 通过电极传输给第一功率合成微带电路, 第三功率合成微带电路, 所述第一功率合成微 带电路和第三功率合成微带电路, 各将三路功率放大模块输出的信号合成为一路, 输出给到 第二功率合成微带电路的输入端, 所述第二功率合成微带电路把两路输入功率电流合成为一 路, 并通过电极输送给输出匹配微带电路 , 经过所述输出匹配微带电路匹配后输出到二氧化 碳激光器。  1 . A radio frequency power supply for a laser, comprising: a first power amplification module, a second power amplification module, a third power amplification module, a fourth power amplification module, a fifth power amplification module, and a sixth power amplification Module, first microstrip power synthesis circuit, second microstrip power synthesis circuit, third power synthesis microstrip circuit, radio frequency output matching circuit and water cooling radiator; wherein, first power amplification module, second power amplification module, a three-power amplification module, a fourth power amplification module, a fifth power amplification module, and a sixth power amplification module, the six modules simultaneously giving an RF power current of 81.36 Mhz, which is transmitted to the first power synthesis microstrip circuit through the electrodes, a third power synthesis microstrip circuit, the first power synthesis microstrip circuit and the third power synthesis microstrip circuit, each of the signals output by the three power amplification modules are combined into one way, and outputted to the second power synthesis microstrip circuit Input, the second power synthesis microstrip circuit combines two input power currents into one path, Transport through the electrode to the output microstrip matching circuit, the output of the laser to the carbon dioxide through a microstrip matching circuit to match the output.
2.一种功率合成微带电路,其特征在于:包括第一微带传输部;射频电流从三个输入端输入, 射频电流经过微带线最终聚集合成到输出端上; 其中第一微带传输部是一根宽 3. 2mm, 长度 237mm的敷铜线路, 其中由 3根 69. 6mm长的直线与 2个半径为 4. 5ram的半圆首尾相接而成。 2. A power synthesis microstrip circuit, comprising: a first microstrip transmission portion; a radio frequency current is input from three input terminals, and the radio frequency current is finally aggregated and synthesized on the output end through the microstrip line; wherein the first microstrip The transmission portion is a copper-plated circuit having a width of 3.2 mm and a length of 237 mm, wherein three straight lines of 69.6 mm long are connected with two semicircles having a radius of 4. 5 ram.
3. 根据权利要求 2所述的功率合成微带电路, 其特征在于: 所述功率合成微带电路由三个总 微带合成传输部组成, 这三个部分都是一根宽 3. 2mm, 长 557mm的微带铜线, 其中, 第一总 微带合成传输部和第二总微带合成传输部与第三总微带合成传输部的微带输入端是分开的, 输出接到一起。 The power-synthesizing microstrip circuit according to claim 2, wherein the power-synthesizing microstrip circuit is composed of three total microstrip synthesis transmission sections, each of which is a width of 3. 2 mm, long The 557 mm microstrip copper wire, wherein the first total microstrip synthesis transmission portion and the second total microstrip synthesis transmission portion are separated from the microstrip input end of the third total microstrip synthesis transmission portion, and the outputs are connected together.
4.一种功率合成微带电路,其特征在于:包括第二微带传输部;射频电流从三个输入端输入, 射频电流经过微带线最终聚集合成到输出端上; 其中第二微带传输部是一根宽 3. 2mm, 长度 186. 3mm的敷铜线路, 其中由 4根 36mm长的直线与 3个半径为 4. 5mm的半圆首尾相接而成。  A power synthesis microstrip circuit, comprising: a second microstrip transmission portion; the radio frequency current is input from three input terminals, and the radio frequency current is finally aggregated and synthesized on the output end through the microstrip line; wherein the second microstrip The transmission portion is a copper-clad line having a width of 3.2 mm and a length of 186.3 mm, wherein four straight lines of 36 mm length are connected with three semi-circles having a radius of 4. 5 mm.
5. 根据权利要求 4所述的功率合成微带电路, 其特征在于: 所述功率合成微带电路由三个总 微带合成传输部组成, 这三个部分都是一根宽 3. 2mm, 长 557mm的微带铜线, 第四总微带合 成传输部和第五总微带合成传输部与第六总微带合成传输部的微带输入端是分开的, 输出接 到一起。  The power-synthesizing microstrip circuit according to claim 4, wherein the power-synthesizing microstrip circuit is composed of three total microstrip synthesis transmission sections, each of which is a width of 3. 2 mm, long The 557 mm microstrip copper wire, the fourth total microstrip synthesis transmission portion and the fifth total microstrip synthesis transmission portion are separated from the microstrip input end of the sixth total microstrip synthesis transmission portion, and the outputs are connected together.
6.一种功率合成微带电路,其特征在于:包括第三微带传输部;射频电流从两个输入端输入, 射频电流经过微带线最终聚集合成到输出端上; 其中第三微带传输部是一根宽 4mm, 长度 398mm的敷铜线路, 其中由 9根 34mm长的直线与 8个半径为 3. 67mm的半圆首尾相接而成。 A power synthesis microstrip circuit, comprising: a third microstrip transmission portion; an RF current is input from two input terminals, and the RF current is finally aggregated and synthesized on the output end through the microstrip line; wherein the third microstrip The transmission part is a copper-clad line with a width of 4 mm and a length of 398 mm, wherein nine straight lines of 34 mm length are connected with eight semi-circles having a radius of 3.67 mm.
7. 根据权利要求 6所述的功率合成微带电路, 其特征在于: 所述功率合成微带电路由两个总 微带合成传输部组成, 这两个部分都是一根宽 4mm, 长 557mm的微带铜线, 第七总微带合成 传输部的输入接的是如权利要求 2所述的第一总微带合成传输部和第二总微带合成传输部与 第三总微带合成传输部的微带输出端, 而第八总微带合成传输部的微带输入接的是如权利要 求 4所述的第四总微带合成传输部和第五总微带合成传输部与第六总微带合成传输部的微带 输出端, 最后第七总微带合成传输部与第八总微带合成传输部的微带的输出端连接到一起。7. The power synthesis microstrip circuit according to claim 6, wherein: said power synthesis microstrip circuit is composed of two total microstrip synthesis transmission sections, each of which is a width of 4 mm and a length of 557 mm. The microstrip copper wire, the input of the seventh total microstrip synthesis transmission portion is the first total microstrip synthesis transmission portion and the second total microstrip synthesis transmission portion according to claim 2; a microstrip output end of the third total microstrip synthesis transmission portion, and the microstrip input of the eighth total microstrip synthesis transmission portion is connected to the fourth total microstrip synthesis transmission portion and the fifth total micro according to claim 4. The microstrip output terminal with the combined transmission portion and the sixth total microstrip synthesis transmission portion is connected to the output end of the microstrip of the eighth total microstrip synthesis transmission portion.
8. —种输出匹配微带电路, 其特征在于: 射频电流输入进匹配端, 经过电容电感匹配后从输 出端输出到激光器, 其中第四微带传输部是一根宽 8画, 长度 51. 5画的敷铜线路, 射频电流 经过时起到匹配的作用。 8. An output matching microstrip circuit, characterized in that: the radio frequency current is input into the matching end, and is outputted from the output end to the laser after being matched by the capacitor inductance, wherein the fourth microstrip transmission part is a width of 8 paintings and a length of 51. 5 painted copper lines, the RF current through the matching role.
PCT/CN2015/000904 2015-12-14 2015-12-14 Radio frequency power supply for laser WO2017100965A1 (en)

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