WO2017097163A1 - Distributeur de gaz pour utilisation avec une technique de dépôt de film - Google Patents

Distributeur de gaz pour utilisation avec une technique de dépôt de film Download PDF

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Publication number
WO2017097163A1
WO2017097163A1 PCT/CN2016/108377 CN2016108377W WO2017097163A1 WO 2017097163 A1 WO2017097163 A1 WO 2017097163A1 CN 2016108377 W CN2016108377 W CN 2016108377W WO 2017097163 A1 WO2017097163 A1 WO 2017097163A1
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Prior art keywords
gas
gas distribution
cross
distributor according
sectional area
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PCT/CN2016/108377
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English (en)
Chinese (zh)
Inventor
苏艳波
赵星梅
伯考⋅克雷格
兰云峰
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北京七星华创电子股份有限公司
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Publication of WO2017097163A1 publication Critical patent/WO2017097163A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber

Definitions

  • the present invention relates to the field of semiconductor atomic layer deposition techniques, and more particularly to a gas distributor for use in semiconductor atomic layer deposition techniques.
  • CVD Chemical Vapour Deposition
  • ALD Atomic Layer Deposition
  • the principle of ALD technology is to pass a first reaction gas or vapor into a reaction chamber through a gas distributor, and form a single atomic layer on all surfaces (including the surface of the substrate) that can be contacted by chemisorption or physical adsorption; After the residual gas that has not been adsorbed in the reaction chamber is purged, a second reaction gas or steam is introduced into the reaction chamber to react with the single-layer atomic layer formed on the surface of the first reaction gas to form a desired one. The film is then purged again with residual gas that is not adsorbed in the reaction chamber. The above process is repeated until the desired film thickness is obtained. In the ALD reaction, if the first reactive gas and the second reactive gas are in the process of gas transport When it happens, it will react.
  • This undesired reaction is actually a CVD reaction.
  • the gas delivery line or the inner surface of the gas distributor an undesirable CVD reaction occurs, so that the reaction gas or vapor is lost before entering the reaction chamber, or the previous reactant enters the reaction chamber.
  • the quality of the film deposition and the surface of the substrate affect the quality and effectiveness of the film deposition. Therefore, the first reaction gas and the second reaction gas must be separately and separately passed through the gas distributor into the reaction chamber.
  • the purging method mainly uses a gas distributor to introduce a low-activity or inert gas (such as helium, nitrogen, argon, etc.) into the chamber. Moreover, if the time for purging the residual gas can be reduced before the next reaction gas is introduced, the productivity of the thin film deposition cycle can be remarkably improved, which is of considerable economic value.
  • a gas distributor to introduce a low-activity or inert gas (such as helium, nitrogen, argon, etc.) into the chamber.
  • the amount of purge gas required to achieve the desired film properties some of which, such as the chemical and physical properties of the reactants, are difficult to control practically; there are also factors such as the inert gas flow rate and the need for purging.
  • the volume of space can be controlled by proper reaction system design and process settings.
  • the automatic control of the inert gas flow rate can be easily achieved, the flow rate adjustable range of the inert gas is practically small, provided that the deposition process has been preformed.
  • the flow rate of the inert gas may not be too large.
  • the space required for purging is mainly composed of the internal space volume of the gas distributor, the volume of the conduit for transporting the reaction gas to the reaction chamber, and the internal space volume of the reaction chamber itself.
  • many CVD techniques and ALD techniques are sensitive to the uniformity of the inlet gas of the reaction gases in the reaction chamber and on the substrate surface. Uneven air intake results in uneven film thickness on the substrate surface.
  • US Patent Application US 6921437 B1 Gas Distribution System discloses a gas distributor that realizes the distribution and delivery of reactive gases through a two-layer tree network disposed inside the dispenser.
  • the two-layer network structure of the gas distributor disclosed in the invention patent application can realize independent access of two kinds of reaction sources, since the pipelines of the gas distributor are all equal diameter (or equal cross-sectional area), the end of the pipeline is easily caused. Gas non-uniformity occurs due to the gradual decrease of gas pressure; at the same time, it is difficult to purge the former gas remaining in the pipeline due to the pressure reduction and flow reduction existing in the pipeline. It is prone to CVD reactions.
  • An object of the present invention is to overcome the above-mentioned drawbacks of the prior art and to provide a gas distributor for use in a thin film deposition technique capable of uniformly and uniformly blowing a reaction gas or vapor toward a surface of a substrate, and making the purge gas easy to The residual gas located in the gas distribution line is purged to prevent the chemical vapor deposition reaction from occurring in the atomic layer deposition.
  • Each of the air outlet pipes is in one-to-one correspondence with each of the air outlets;
  • the gas distribution line is in communication with the gas inlet, and a cross-sectional area of each of the gas distribution lines gradually decreases along a direction of gas transport thereof.
  • the gas distribution pipeline comprises:
  • a plurality of gas distribution main tubes whose gas flow ends are connected together to form a common communication end, the end of the gas flow is uniformly distributed along the circumference of the circle of the common communication end, and the plurality of gas distribution main tubes are along the radial direction of the circle Providing; the end of the gas flow of each of the gas distribution main tubes is closed; and, the cross-sectional area of each of the gas distribution main tubes gradually decreases from the beginning of the gas flow toward the end of the gas flow;
  • An intake pipe is respectively connected to the common communication end of the gas distribution main pipe and the intake port.
  • the common communication end corresponds to a center of the base.
  • the cross-sectional area of each of the gas distribution main tubes is set in a manner of decreasing proportionally or reducing the area amount from the beginning of the gas flow toward the end of the gas flow.
  • a plurality of gas distribution branches are uniformly disposed at equal angles on both sides of each gas distribution main pipe, and gas distribution branches located between two adjacent gas distribution main pipes are arranged in parallel with each other; The end of the gas flow branch of the gas distribution branch is closed; and,
  • the cross-sectional area of each of the gas distribution branches gradually decreases from the beginning of the gas flow toward the end of the gas flow.
  • the cross-sectional area of the beginning of the gas flow of each gas distribution branch on each side of each gas distribution main pipe gradually decreases from the beginning of the gas distribution main pipe toward the end of the gas flow.
  • the cross-sectional area of the gas flow starting end of each gas distribution branch on each side of each gas distribution main pipe is set in a proportionally decreasing or equal area reduction manner from the beginning of the gas distribution main pipe toward the end of the gas flow.
  • one side of the gas distribution branch pipe and one side of the gas distribution branch pipe are disposed offset.
  • the total reduction in cross-sectional area of each of the gas distribution main tubes and/or each of the gas distribution manifolds is 50 to 90%.
  • the total reduction in the cross-sectional area of the gas flow starting end of each gas distribution branch pipe on each side of each gas distribution main pipe is 10 to 50%.
  • the gas distribution main pipe and the gas distribution branch pipe are located at the same horizontal plane, and the lower end surface of the body is a horizontal plane.
  • the included angle is 180°/n, where n is the number of gas distribution mains.
  • the included angle is 30-60°.
  • the gas distribution main pipe has a cross section of any one of a circular shape, an elliptical shape, a rectangular shape, a regular polygonal shape, or a different shape.
  • the cross section of the gas distribution branch is any one of a circular shape, an elliptical shape, a rectangular shape, a regular polygon shape or a special shape.
  • the number of gas distribution mains is 3-6.
  • the number of the gas distribution networks is one or more; wherein, the gas distribution lines of the plurality of gas distribution networks are independent of each other, and are arranged offset by upper and lower layers;
  • the number of the air inlets corresponds to the number of the gas distribution networks, and the gas distribution lines of the respective gas distribution networks are in communication with the respective air inlets in a one-to-one correspondence;
  • the number of the air outlets corresponds to the total number of the air outlet pipes of all the gas distribution networks, and each of the air outlet pipes communicates with the respective air outlets in one-to-one correspondence.
  • the projection area of the gas outlet of all of the gas distribution networks formed on the surface of the susceptor is capable of covering the surface of the substrate placed on the susceptor.
  • the present invention provides a gas distribution network in the body of the gas distributor, the gas distribution network comprising a gas distribution line and a plurality of outlet pipes disposed thereon, wherein the plurality of outlet pipes are Located at the lower end of the body and disposed vertically, and correspondingly connected to the plurality of air outlets uniformly distributed on the surface of the base, the gas distribution pipeline communicates with the air inlet at the upper end of the body, so that the reaction gas or steam can be sequentially passed through.
  • the gas port, the gas distribution line, and the gas outlet are uniformly uniformly blown toward the surface of the substrate, and by gradually reducing the cross-sectional area of each gas distribution line in the direction of gas transport thereof, the purge gas can be easily
  • the residual gas at the end of the gas flow in the gas distribution line is purged, thereby avoiding the reaction between different reaction gases.
  • the CVD reaction is prevented from occurring erroneously in the ALD reaction.
  • FIG. 1 is a schematic view showing a mounting structure of a gas distributor applied to a thin film deposition technique in a reaction chamber of an atomic layer deposition apparatus according to a preferred embodiment of the present invention
  • FIG. 2 is a schematic structural view of a gas distribution network according to a preferred embodiment of the present invention.
  • FIG. 3 is a schematic view showing the inverted structure of the gas distribution network of FIG. 2.
  • FIG. 1 is a schematic view showing a mounting structure of a gas distributor applied to a thin film deposition technology in a reaction chamber of an atomic layer deposition apparatus according to a preferred embodiment of the present invention.
  • a gas distributor applied to a thin film deposition technique of the present invention can be mounted on the top inner wall of the reaction chamber 4 of the atomic layer deposition apparatus, above the susceptor 3 on which the substrate 2 is placed, and The susceptor 3 and the substrate 2 are kept at a certain distance.
  • the gas distributor comprises a body 1 which preferably has a cylindrical shape corresponding to the substrate 2.
  • An air inlet 12 is provided in the middle of the upper end of the body 1, and a plurality of air outlets 13 are provided at the lower end of the body 1, and the plurality of air outlets 13 are vertically disposed and evenly distributed with respect to the surface of the base.
  • the gas or steam blown vertically by the respective gas outlets 13 can uniformly flow toward the surface of the substrate, thereby ensuring that The reaction gas or vapor blown to the substrate during the ALD reaction can uniformly contact the substrate 2 at the same time, thereby obtaining a uniform thin film deposition layer by the reaction.
  • a gas distribution network 6 is provided within the body 1.
  • the air inlet 12 is connected to an external air source line, and the external air source line is used to pass a gas (reaction gas or steam required for the process) to the gas distribution network 6 through the air inlet 12, and is perpendicular to each air outlet 13 and Spraying the surface uniformly onto the surface of the substrate, or passing a purge gas, purging the passage of the gas distribution network 6 and the reaction chamber 4 to remove the reaction gas or vapor remaining in the passage of the gas distribution network 6 and The residual gas in the reaction chamber 4 is purged to avoid an undesired CVD reaction during the ALD reaction.
  • a gas reaction gas or steam required for the process
  • FIG. 2 is a schematic structural diagram of a gas distribution network according to a preferred embodiment of the present invention.
  • the gas distribution network 6 includes a gas distribution line and a plurality of gas outlet pipes 7 disposed on the gas distribution pipe, wherein each of the gas outlet pipes 7 communicates with the respective gas outlet ports 13 in one-to-one correspondence, the gas distribution pipe
  • the road is in communication with the air inlet 12.
  • the external air supply line is supplied with gas through the air inlet 12 to the gas distribution line, and the gas flows into the reaction chamber 4 through the respective air outlet tubes 7 and the respective ones of the air outlets 13 corresponding thereto.
  • each gas distribution line is gradually reduced along the direction of its gas transport, which makes it easy for the purge gas to purge the residual gas at the end of the gas flow distribution line, thereby avoiding different
  • the reaction between the reaction gases effectively prevents the CVD reaction from occurring in the ALD reaction.
  • the gas distribution line includes a plurality of gas distribution main tubes 8 to 11 and an intake pipe 5.
  • the gas flow starting ends of the plurality of gas distribution main pipes are connected together to form a common communication end, and the gas flow ends of the plurality of gas distribution main pipes are evenly distributed along the circumference of the circle whose center is the common communication end, and the plurality of gas distribution main pipes are along the diameter of the circle
  • the arrangement is such that the common communication end is located at the center of the structure of the gas distribution network 6, which preferably corresponds to the center of the susceptor 3, thereby achieving uniform distribution of the plurality of gas distribution hosts relative to the surface of the substrate.
  • the end of the gas flow of each gas distribution main is closed.
  • each gas distribution main pipe 8 9, 10 or 11.
  • each gas distribution branch is in the gas distribution main
  • the sides are uniformly arranged at the same angle ⁇ , that is, the individual gas distribution branches on each side are inclined with respect to the gas distribution main pipe, and the gas distribution branches on the same side are equally spaced.
  • Each gas distribution branch between each adjacent two gas distribution mains is parallel to each other, for example, each gas distribution branch 8-2, 8-4, 8-6 between adjacent gas distribution mains 8 and 11. 8-8 and 11-1, 11-3, 11-5, and 11-7 are parallel to each other to avoid mutual influence.
  • the gas flow start ends of the respective gas distribution branches are in communication with the respective positions of the gas distribution main pipes, and the gas flow ends of the respective gas distribution branch pipes are closed.
  • the gas distribution main pipe and the gas distribution branch pipes on both sides thereof can form a gas distribution network structure which is connected to each other in a tree shape, thereby achieving a function of uniformly distributing and conveying gas, thereby further improving process uniformity. .
  • the gas pipeline of the gas distributor usually has an equal-diameter cross-sectional area, and as the reaction gas or steam enters from the air inlet, through the equal-diameter air pipeline to the air outlet, the allocated The amount of reactive gas or steam is actually decreasing. This is due to the time difference of gas delivery and the influence of the pressure difference of the pipeline. A part of the gas has passed into the reaction chamber through the gas outlet of the gas distributor near the inlet end. Therefore, such a gas distributor having an equal cross-sectional area gas path pipe, at the pipe at the distal end of the intake port, is less likely to be left in the pipe due to pressure reduction and flow reduction. A gas purge is clean.
  • the present invention gradually reduces the cross-sectional area of each gas distribution main pipe from the beginning of the gas flow toward the end of the gas flow, that is, the cross-sectional area of the gas flow main pipe at the center of the gas distribution network is designed to have a cross-sectional area. It is the largest and has a wedge-shaped design at the end of its gas flow, so that the cross-sectional area of the gas distribution main pipe gradually decreases from the center of the gas distribution network toward the edge.
  • the gas distribution main pipe to have an internal space structure whose cross-sectional area gradually decreases from the center to the edge, thereby increasing the pressure and flow at the edge of the gas distribution main pipe, thereby reducing the purge time, improving the purge efficiency, and effectively preventing the The CVD reaction is erroneously occurring in the ALD reaction.
  • the cross-sectional area of each gas distribution branch is from the beginning of the gas flow
  • the direction of the end of the gas flow is gradually reduced, that is, the gas distribution branch pipe communicating with the gas distribution main pipe is also designed to be wedge-shaped, and the cross-sectional area of the gas distribution branch pipe is gradually reduced from the connection point thereof with the gas distribution main pipe to the edge thereof.
  • the cross-sectional area of each gas distribution branch on each side of each gas distribution main pipe gradually decreases from the beginning of the gas distribution main pipe toward the end of the gas flow, for example, for the gas distribution main pipe 8, one side thereof
  • the cross-sectional areas of the gas distribution branches 8-1, 8-3, 8-5, and 8-7 gradually decrease from the beginning of the gas distribution main pipe toward the end of the gas flow, that is, the cross section of the gas distribution branch 8-1.
  • the area is the largest
  • the cross-sectional area of the gas distribution branch pipes 8-7 is the smallest, and the cross-sectional areas of the gas distribution branch pipes 8-1, 8-3, 8-5, and 8-7 are sequentially decreased.
  • the cross-sectional areas of the gas distribution branches 8-2, 8-4, 8-6, and 8-8 on the other side of the gas distribution main pipe 8 gradually change from the beginning of the gas distribution main pipe toward the end of the gas flow. Reduced.
  • the cross-sectional area of each of the gas distribution mains and/or the gas distribution manifold is set in a manner that is proportionally reduced or equal in area reduction from the beginning of the respective gas flow toward the end of the gas flow.
  • the total reduction of the cross-sectional area described above should be controlled between 50 and 90%, that is, the cross-sectional area at the end of the gas distribution main pipe is the cross-sectional area of the gas flow at the center of the gas distribution network. 10 to 50%.
  • the cross-sectional area at the end of the gas flow of the gas distribution branch is 10 to 50% of the cross-sectional area of the gas flow at the junction with the gas distribution pipe.
  • the cross-sectional area of each gas distribution branch on each side of each gas distribution main pipe is set in a proportionally decreasing or equal area reduction manner from the beginning of the gas distribution main pipe toward the end of the gas flow. Further preferably, the total reduction in the cross-sectional area of each of the gas distribution branches on both sides of each gas distribution main pipe is 10 to 50%.
  • the number of gas distribution supervisors may be 3-6.
  • the angle ⁇ formed between the gas distribution branch on both sides of each gas distribution main pipe and the gas distribution main pipe is preferably 180°/n, where n is the number of gas distribution mains.
  • n is the number of gas distribution mains.
  • the included angle is 45°.
  • the angle ⁇ can be adjusted between 30 and 60°.
  • the intake pipe 5 is disposed above the common communication end of each gas distribution main pipe, and is respectively connected to the common communication end of the gas distribution main pipe and the intake port 12 (please refer to FIG. 1).
  • the installation position of the intake pipe 5 belongs to the center position of the gas distribution network 6.
  • the air inlet 12 can also be disposed at other suitable positions on the surface of the body.
  • the present invention is not limited, and the position of the intake pipe 5 corresponds to the position of the air inlet 12.
  • FIG. 3 is a schematic diagram of the inverted structure of the gas distribution network of FIG.
  • a plurality of air outlet pipes 7 are disposed on the lower side of each gas distribution pipe, and the air outlet pipes 7 on each gas distribution pipe are spaced and uniform along the length direction of the gas distribution pipe.
  • each of the air outlet pipes 7 is disposed vertically downward, and each of the air outlet pipes 7 communicates with the respective air outlet ports 13 (please refer to FIG. 1) in a one-to-one correspondence.
  • the external air supply line passes through the air inlet 12 to the gas distribution line, and the gas flows into the reaction chamber 4 through the respective air outlet tubes 7 and the corresponding ones of the air outlets 13 and is vertically sprayed downward.
  • Substrate 2 passes through the air inlet 12 to the gas distribution line, and the gas flows into the reaction chamber 4 through the respective air outlet tubes 7 and the corresponding ones of the air outlets 13 and is vertically sprayed downward.
  • the outer ends of the gas distribution main pipes 8-11, the gas distribution main pipe branches 8-1 to 8-8, 9-1 to 9-8, 10-1 to 10-8, and 11-1 to 11-8 are closed.
  • the structure is such that the reaction gas or steam in the pipeline can only be discharged from the gas outlet network 6 by the respective outlet and outlet ports 13. Since the plurality of gas outlets 13 are vertically disposed and evenly distributed with respect to the surface of the substrate, the reaction gas or the reaction gas can be realized. The steam is blown vertically and evenly toward the surface of the substrate.
  • the body 1 is usually processed into a cylindrical shape corresponding to the substrate 2, so that the end of the gas distribution main pipe and the gas distribution branch can be extended toward the side of the body 1 and the inner wall of the body 1. Fixed connection.
  • the gas distribution network 6 in this embodiment will have the circle shown In the shape of the structure, the length of the gas distribution branch pipe on both sides of the gas distribution main pipe will also be gradually shortened, so that the number of the gas outlet pipes 7 provided at the lower end of each gas distribution branch pipe will also be distributed more or less.
  • the body 1 when the gas distributor of the present invention is specifically processed, the body 1 can be divided into two parts, an upper plate 14 and a lower plate 15, for processing.
  • a gas inlet 12 including an intake pipe 5
  • a plurality of gas outlets 13 including the gas outlet pipe 7) which are regularly distributed and penetrated in the lower plate 15 may be opened. All of the air outlets 13 are formed on the surface of the base 3 to cover the surface of the substrate 2 placed on the base 3; the lower surface of the upper plate 14 is as shown in FIG.
  • the regular grooves forming the gas distribution network 6 are shown, and then the upper plate 14 and the lower plate 15 of the body 1 are joined together by welding to complete the fabrication of the gas distributor of the present invention.
  • the gas distribution main pipe and the gas distribution branch may have a cross section of any one of a circular shape, an elliptical shape, a rectangular shape, a regular polygonal shape, or a different shape. It is because of the tree-interlaced gas distribution network design feature of the present invention that in the present invention, the gas distribution of the gas distribution pipe having different cross-sectional shapes can be expanded to adapt to the cross-sectional shape of the gas distribution pipe.
  • the network can well realize the function of evenly distributing and transporting gas, and can prevent the former reactive gas from remaining in the pipeline during gas purging.
  • the gas distribution main pipe and the gas distribution branch pipe are disposed at the same horizontal plane; further, the lower end surface of the body is a horizontal plane, so that the distance between each air outlet and the base is equal, and space can be saved on the one hand.
  • the reaction gas or vapor can be simultaneously blown onto the surface of the substrate to react.
  • one side gas distribution branch pipe and the other side gas distribution branch pipe can be arranged in a dislocation manner as shown in the figure to avoid simultaneous distribution on both sides of the gas distribution main pipe at the same position.
  • the mouth causes a significant attenuation of pressure and flow.
  • the gas distribution network 6 may be disposed in the body 1 by one, or may be two or even more.
  • one gas distribution network shown in FIG. 2 can be installed in the body 1 in a horizontal state (please refer to FIG. 1), and through the intake pipe 5 and the body. 1 inlet port 12
  • the air outlet pipe 7 is connected to the air outlet port 13 corresponding to the number and position of the lower end surface of the body.
  • the reaction gas enters the gas distribution main pipe 8-11 of the gas distribution network 6 from the intake pipe 5, and is distributed to the gas distribution branch pipes 8-1 to 8-8, 9-1 to 9-8, 10-1 to 10, respectively.
  • -8 and 11-1 to 11-8 pass through the gas outlet pipe 7 and enter the reaction chamber 4 through the gas outlet port 13, and react on the surface of the substrate 2 placed on the susceptor 3.
  • two or more gas distribution lines of the gas distribution network shown in FIG. 2 are independent of each other, and are arranged in the upper and lower layers, that is, each gas.
  • the center of the distribution network ie, the position of the intake pipe
  • the corresponding gas distribution main pipe and the gas distribution branch pipe of each layer of the gas distribution network are offset from each other at a certain position, so that the upper and lower gas distribution networks are between the pipelines. There is no conflict on the layout.
  • the number of air inlets corresponds to the number of gas distribution networks, and the gas distribution lines of the respective gas distribution networks are in communication with the respective air inlets in a one-to-one correspondence; the number of air outlets and the outlet pipes of all gas distribution networks The total number corresponds to each other, and each of the air outlet pipes is in one-to-one correspondence with each of the air outlets.
  • the intake pipes of the respective gas distribution networks are respectively connected to the corresponding air inlets provided in the body, and can further respectively communicate with one of the air source pipelines of the atomic layer deposition device.
  • the two gas distribution networks are on different planes in the body of the gas distributor, and are separated by providing different intake lines and different outlet lines, so There is no phenomenon in which a gas in the gas distribution network flows into the other and mixes inside the gas distributor.
  • This kind of design is applied when there are two kinds of different reaction gases in the reaction, which can be used exclusively for special purpose, saving the switching time of different reaction gases, and also improving the stability and safety of gas transportation.
  • the body can be divided into three parts: an upper plate, a middle plate and a lower plate for processing. Wherein, a through air inlet may be opened in the upper plate, and a plurality of air outlets may be opened in the lower plate.
  • a regular groove forming a gas distribution network is formed on the lower surface of the upper plate, and a gas distribution network is formed by closing the lower surface of the upper plate and the surface of the upper plate; Forming a regular groove forming a second gas distribution network, closing the lower surface of the middle plate and the lower plate surface to form a second gas distribution network; then bonding the upper, middle and lower plates of the body to each other by welding Together, the fabrication of a gas distributor having two gas distribution networks of the present invention was completed.
  • the present invention provides a gas distribution network in a body of a gas distributor, the gas distribution network comprising a gas distribution line and a plurality of outlet pipes disposed thereon, wherein the plurality of outlet pipes are located at a lower end of the body and disposed vertically And a plurality of air outlets uniformly distributed with respect to the surface of the base are connected in one-to-one correspondence, and the gas distribution pipeline communicates with the air inlet located at the upper end of the body, so that the reaction gas or steam can sequentially pass through the air inlet, the gas distribution pipeline, and
  • the gas outlet is uniformly evenly blown toward the surface of the substrate, and by gradually reducing the cross-sectional area of each gas distribution line along its gas transport direction, the purge gas can easily be placed at the end of the gas distribution line.
  • the residual gas at the position is purged, so that the reaction between different reaction gases can be avoided, and the CVD reaction can be prevented from occurring in the ALD reaction.

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

La présente invention concerne un distributeur de gaz pour utilisation avec une technique de dépôt de film. Le distributeur de gaz comprend un corps (1), qui comprend un orifice d'entrée de gaz (12) et une pluralité d'orifices de sortie de gaz (13) respectivement disposés au niveau du côté supérieur et du côté inférieur du corps. La pluralité de sorties de gaz (13) sont toutes disposées verticalement, et sont uniformément agencées par rapport à une surface de base. Il est disposé dans le corps (1) un réseau de distribution de gaz (6), qui comprend des canalisations de distribution de gaz et une pluralité de tubes de sortie de gaz (7) disposés sur les canalisations de distribution de gaz, la pluralité de tubes de sortie de gaz (7) étant en communication avec des orifices de sortie de gaz respectifs (13), les canalisations de distribution de gaz étant en communication avec l'orifice d'entrée de gaz (12), et l'aire de section transversale de chaqcune des canalisations de distribution de gaz diminuant progressivement dans la direction de transport de gaz. Le distributeur de gaz pour utilisation avec la technique de dépôt de film permet qu'un gaz de purge purge aisément les gaz résiduels dans les canalisations de distribution de gaz, de manière à éviter qu'une réaction de dépôt chimique en phase vapeur se produise de façon indésirable pendant un dépôt de couche atomique.
PCT/CN2016/108377 2015-12-09 2016-12-02 Distributeur de gaz pour utilisation avec une technique de dépôt de film WO2017097163A1 (fr)

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Application Number Priority Date Filing Date Title
CN201510900815.X 2015-12-09
CN201510900815.XA CN105349967B (zh) 2015-12-09 2015-12-09 一种应用于薄膜沉积技术的气体分配器

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115074701A (zh) * 2022-05-31 2022-09-20 北京北方华创微电子装备有限公司 半导体工艺设备的进气装置及半导体工艺设备
KR20220146546A (ko) * 2020-04-03 2022-11-01 베이징 나우라 마이크로일렉트로닉스 이큅먼트 씨오., 엘티디. 반도체 디바이스 중의 가스 분배기 및 반도체 디바이스

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