WO2017082695A3 - Metal-carbide-oxide thin film comprising carbon, oxide, and metal, and method for manufacturing same - Google Patents

Metal-carbide-oxide thin film comprising carbon, oxide, and metal, and method for manufacturing same Download PDF

Info

Publication number
WO2017082695A3
WO2017082695A3 PCT/KR2016/013037 KR2016013037W WO2017082695A3 WO 2017082695 A3 WO2017082695 A3 WO 2017082695A3 KR 2016013037 W KR2016013037 W KR 2016013037W WO 2017082695 A3 WO2017082695 A3 WO 2017082695A3
Authority
WO
WIPO (PCT)
Prior art keywords
thin film
metal
carbide
oxide
carbon
Prior art date
Application number
PCT/KR2016/013037
Other languages
French (fr)
Korean (ko)
Other versions
WO2017082695A2 (en
Inventor
정동근
반원진
권성률
Original Assignee
성균관대학교 산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 성균관대학교 산학협력단 filed Critical 성균관대학교 산학협력단
Publication of WO2017082695A2 publication Critical patent/WO2017082695A2/en
Publication of WO2017082695A3 publication Critical patent/WO2017082695A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C07F5/06—Aluminium compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02183—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing tantalum, e.g. Ta2O5
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02186—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing titanium, e.g. TiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02189—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing zirconium, e.g. ZrO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H01L21/31122—Etching inorganic layers by chemical means by dry-etching of layers not containing Si, e.g. PZT, Al2O3

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

The present invention relates to a thin film comprising: carbon; oxygen; and a metal selected from a group consisting of aluminum, titanium, hafnium, tantalum, zirconium, and tungsten and, more particularly, to a metal-carbide-oxide thin film comprising, on the basis of the total atomic percentage: 5 to 85% of carbon, 5 to 60% of oxygen, and 5 to 40% of a metal. The metal-carbide-oxide thin film of the present invention is formed by being deposited through a single injection process of a reactant precursor, such that the thickness of a thin film may be reduced. Thus, it is possible to simplify processes and reduce manufacturing costs, and thus improve productivity. In addition, a method for manufacturing the metal-carbide-oxide thin film of the present invention may control the content ratio of each component in the thin film by changing deposition conditions, and thus may control the physical properties, such as strength, etch resistance, and conductivity, etc., of the manufactured thin film. Thus, it is advantageous to manufacture a thin film having properties suitable for the intended use.
PCT/KR2016/013037 2015-11-12 2016-11-11 Metal-carbide-oxide thin film comprising carbon, oxide, and metal, and method for manufacturing same WO2017082695A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020150159154A KR101818610B1 (en) 2015-11-12 2015-11-12 Metal carbon oxide film comprising carbon, oxygen, and metal and fabrication method thereof
KR10-2015-0159154 2015-11-12

Publications (2)

Publication Number Publication Date
WO2017082695A2 WO2017082695A2 (en) 2017-05-18
WO2017082695A3 true WO2017082695A3 (en) 2017-06-29

Family

ID=58695793

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2016/013037 WO2017082695A2 (en) 2015-11-12 2016-11-11 Metal-carbide-oxide thin film comprising carbon, oxide, and metal, and method for manufacturing same

Country Status (2)

Country Link
KR (1) KR101818610B1 (en)
WO (1) WO2017082695A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020141850A1 (en) * 2018-12-31 2020-07-09 충남대학교산학협력단 Hydrocarbon thin film, method of preparing hydrocarbon thin film, and semiconductor device comprising hydrocarbon thin film
CN112914561B (en) * 2021-01-25 2023-06-20 深圳大学 Mixed metal carbon nano-film hydrogel flexible bending sensing unit, preparation method thereof and flexible bending sensor
WO2024091321A1 (en) * 2022-10-26 2024-05-02 Applied Materials, Inc. Aluminum oxide carbon hybrid hardmasks and methods for making the same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010087189A (en) * 2000-02-17 2001-09-15 조셉 제이. 스위니 Method of depositing an amorphous carbon layer
KR20100002067A (en) * 2008-06-27 2010-01-06 주식회사 에스앤에스텍 Blankmask, photomask and it's manufacturing method
KR20100082718A (en) * 2009-01-09 2010-07-19 주식회사 에스앤에스텍 A blank mask, a photomask using the same and method of fabricating the same
KR20100134676A (en) * 2008-04-16 2010-12-23 에이에스엠 아메리카, 인코포레이티드 Atomic layer deposition of metal carbide films using aluminum hydrocarbon compounds
KR20130128337A (en) * 2012-05-16 2013-11-26 신에쓰 가가꾸 고교 가부시끼가이샤 Half-tone phase shift mask blank and method for manufacturing half-tone phase shift mask

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010087189A (en) * 2000-02-17 2001-09-15 조셉 제이. 스위니 Method of depositing an amorphous carbon layer
KR20100134676A (en) * 2008-04-16 2010-12-23 에이에스엠 아메리카, 인코포레이티드 Atomic layer deposition of metal carbide films using aluminum hydrocarbon compounds
KR20100002067A (en) * 2008-06-27 2010-01-06 주식회사 에스앤에스텍 Blankmask, photomask and it's manufacturing method
KR20100082718A (en) * 2009-01-09 2010-07-19 주식회사 에스앤에스텍 A blank mask, a photomask using the same and method of fabricating the same
KR20130128337A (en) * 2012-05-16 2013-11-26 신에쓰 가가꾸 고교 가부시끼가이샤 Half-tone phase shift mask blank and method for manufacturing half-tone phase shift mask

Also Published As

Publication number Publication date
KR20170056093A (en) 2017-05-23
KR101818610B1 (en) 2018-01-16
WO2017082695A2 (en) 2017-05-18

Similar Documents

Publication Publication Date Title
WO2017082695A3 (en) Metal-carbide-oxide thin film comprising carbon, oxide, and metal, and method for manufacturing same
PT2265744E (en) Method for producing metal oxide layers having a pre-defined structure by way of arc evaporation
WO2015091781A3 (en) Method of producing transition metal dichalcogenide layer
US20120315453A1 (en) Coating layer structure of basic material of mold
WO2017001406A3 (en) Carbon-nanotube-based composite coating and production method thereof
US11268189B2 (en) Method of manufacturing tantalum carbide coating layer using chemical vapor deposition and tantalum carbide manufactured using the same
KR102436934B1 (en) A coated cutting tool and a method of producing a coated cutting tool
JP2015046595A5 (en)
TW200940750A (en) Manufacturing process of electrodes for electrolysis
EP2799588A3 (en) Architectures for high temperature TBCs with ultra low thermal conductivity and abradability and method of making
GB201216405D0 (en) Multilayer coated wear-resistant member and method for making the same
WO2016061468A3 (en) High-speed deposition of mixed oxide barrier films
MX2017010865A (en) High performance coating for high-strength steel cold metal forming.
JP2017106065A5 (en)
JP2016013995A5 (en)
WO2010107878A3 (en) Method and composition for depositing ruthenium with assistive metal species
TW200942646A (en) Manufacturing process of electrodes for electrolysis
WO2013177557A3 (en) Methods of atomic layer deposition of hafnium oxide as gate dielectrics
GB201212174D0 (en) Coated article having yttrium-containig coatings applied by physical vapor deposition and method for making the same
TW201714318A (en) Solar cell structure and method for manufacturing the same
JP2018039045A5 (en)
JP7344482B2 (en) Reducing wear and/or friction using molybdenum nitride-based coatings
WO2013057065A3 (en) Ceramic product for use as a target
SG11201808205QA (en) Ti-Nb ALLOY SPUTTERING TARGET AND PRODUCTION METHOD THEREOF
US8722180B2 (en) Coated article and method for making said article

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 16864621

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 16864621

Country of ref document: EP

Kind code of ref document: A2