WO2017080064A1 - 量子点彩膜基板的制备方法及量子点彩膜基板 - Google Patents

量子点彩膜基板的制备方法及量子点彩膜基板 Download PDF

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WO2017080064A1
WO2017080064A1 PCT/CN2015/099107 CN2015099107W WO2017080064A1 WO 2017080064 A1 WO2017080064 A1 WO 2017080064A1 CN 2015099107 W CN2015099107 W CN 2015099107W WO 2017080064 A1 WO2017080064 A1 WO 2017080064A1
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quantum dot
layer
pixel region
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green
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French (fr)
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李冬泽
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133617—Illumination with ultraviolet light; Luminescent elements or materials associated to the cell
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
    • F21V9/40—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters with provision for controlling spectral properties, e.g. colour, or intensity
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/36—Micro- or nanomaterials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H10H20/8513—Wavelength conversion materials having two or more wavelength conversion materials

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a method for preparing a quantum dot color film substrate and a quantum dot color film substrate.
  • quantum dots After the semiconductor material gradually decreases from the bulk phase to a certain critical dimension (1-20 nm), the volatility of the carrier becomes significant, the motion will be limited, resulting in an increase in kinetic energy, and the corresponding electron structure from the bulk phase.
  • the level structure becomes a discontinuity of quasi-splitting, a phenomenon known as the quantum size effect.
  • the more common semiconductor nanoparticles, quantum dots are mainly II-VI, II-V and IV-VI quantum dots. These kinds of quantum dots all obey the quantum size effect, and their properties change regularly with size, such as absorption and emission wavelengths vary with size. Therefore, semiconductor quantum dots have important applications in the fields of illumination, displays, lasers, and bioluminescent labels.
  • quantum dot materials has the advantages of concentrated luminescence spectrum, high color purity, and easy adjustment of the luminescent color by the size, structure or composition of the quantum dot material, which can be effectively applied to display devices to effectively increase the color gamut of the display device and Color reproduction ability.
  • the color filter substrate includes a plurality of pixel units, and each of the pixel units includes a red sub-pixel unit, a green sub-pixel unit, and a blue sub-pixel unit, wherein the red sub-pixel unit has a red filter.
  • the green sub-pixel unit has a green filter for transmitting light in the green band and filtering out other bands of light; blue sub-pixel unit It has a blue filter for transmitting light in the blue band and filtering out other bands of light.
  • the filter filters out most of the light through a small portion of the light, for example, the red filter filters only the blue and green bands through the red band. The light loss is close to the light, and therefore, the display panel has a large light loss and a low light transmittance.
  • the object of the present invention is to provide a method for preparing a quantum dot color film substrate, which is triggered by light.
  • the agent realizes selective quenching of the quantum dot material in the quantum dot glue, and simplifies the manufacturing process of the quantum dot color film substrate while reducing the production cost while obtaining high color gamut display.
  • Another object of the present invention is to provide a quantum dot color film substrate, which can meet the requirements of a display device for a high color gamut, has a simple preparation process and low cost.
  • the present invention first provides a method for preparing a quantum dot color film substrate, comprising the following steps:
  • Step 1 Providing a substrate, where the substrate includes a red sub-pixel region, a green sub-pixel region, and a blue sub-pixel region;
  • Step 2 forming a patterned red color resist layer, a patterned green color resist layer, and a patterned organic corresponding to the red sub-pixel region, the green sub-pixel region, and the blue sub-pixel region on the substrate a transparent photoresist layer; obtaining a color filter layer comprising a red color resist layer, a green color resist layer, and an organic transparent photoresist layer;
  • Step 3 coating a color filter on the color filter layer to thermally cure the quantum dot glue
  • the quantum dot glue is a thermosetting glue comprising a red quantum dot material, a green quantum dot material, and a photoinitiator; the photoinitiator is an ultraviolet photoinitiator capable of quenching quantum dot material under ultraviolet light irradiation. ;
  • Step 4 during the thermal curing process, providing a photomask, the photomask including an opaque portion corresponding to the red sub-pixel region and the green sub-pixel region, and a light-transmitting portion corresponding to the blue sub-pixel region;
  • the reticle irradiates the quantum dot on the blue sub-pixel region with ultraviolet light, and the photoinitiator in the quantum dot on the blue sub-pixel region annihilates the quantum dot material under ultraviolet light irradiation
  • the quantum dot material located on the red sub-pixel region and the green sub-pixel region is not affected by ultraviolet light, and the quantum dot material therein is not affected in this step;
  • Step 5 after the end of the thermal curing, obtaining a quenched quantum dot layer; thereby obtaining a quantum dot color film substrate including a substrate, a color filter film, and a quantum dot layer; the quantum dot layer includes the red sub-layer a first quantum dot layer on the pixel region and the green sub-pixel region, and a second quantum dot layer on the blue sub-pixel region;
  • the red quantum dot material and the green quantum dot material in the first quantum dot layer respectively emit red light and green light under blue light excitation; the quantum dot material in the second quantum dot layer does not emit light under illumination.
  • the photoinitiator is benzoin dimethyl ether or methyl benzoylformate.
  • the thickness of the quantum dot coating on the color filter layer is 0.5-20 ⁇ m.
  • the method further includes the step of forming a filter layer on the first quantum dot layer to filter out light having a wavelength of less than 400 nm, thereby preventing the photoinitiator of the first quantum dot layer from quenching the quantum dot material under ultraviolet light.
  • the quantum dot material in the quantum dot glue is one or more of a group II-VI quantum dot material and a group I-III-VI quantum dot material.
  • Quantum dot material within the quantum dot gum ZnCdSe 2, CdSe, CdTe, CuInS one or more of the 2, ZnCuInS 3.
  • the present invention also provides a quantum dot color film substrate, comprising: a substrate, a color filter layer on the substrate, and a quantum dot layer on the color filter layer;
  • the substrate includes a red sub-pixel region, a green sub-pixel region, and a blue sub-pixel region; the color filter layer includes the red sub-pixel region, the green sub-pixel region, and the blue sub-pixel region respectively.
  • the quantum dot layer includes a first quantum dot layer on the red sub-pixel region and a green sub-pixel region, and a second quantum dot layer on the blue sub-pixel region; the quantum dot layer is composed of quantum Dispensing formation; the quantum dot glue is obtained by mixing red quantum dot material, green quantum dot material, and photoinitiator in a thermosetting glue;
  • the red quantum dot material and the green quantum dot material in the first quantum dot layer respectively emit red light and green light under blue light excitation; and the quantum dot material in the second quantum dot layer is irradiated by ultraviolet light by a photoinitiator a quantum dot material in which fluorescence quenching occurs, the second quantum dot layer not emitting light under illumination;
  • the quantum dot color film substrate is used in a display device whose backlight is blue light.
  • the display device is a liquid crystal display device, an organic electroluminescence display device, or a quantum dot electroluminescence display device.
  • the invention further includes a filter layer disposed on the first quantum dot layer, wherein the filter layer is used to filter out light having a wavelength of less than 400 nm, and the photoinitiator of the first quantum dot layer is prevented from quenching the quantum dots under ultraviolet light. material.
  • the quantum dot layer has a thickness of 0.5 to 20 ⁇ m.
  • the present invention also provides a quantum dot color film substrate, comprising: a substrate, a color filter layer on the substrate, and a quantum dot layer on the color filter layer;
  • the substrate includes a red sub-pixel region, a green sub-pixel region, and a blue sub-pixel region; the color filter layer includes the red sub-pixel region, the green sub-pixel region, and the blue sub-pixel region respectively.
  • the quantum dot layer includes a first quantum dot layer on the red sub-pixel region and a green sub-pixel region, and a second quantum dot layer on the blue sub-pixel region; the quantum dot layer is composed of quantum Dispensing formation; the quantum dot glue is obtained by mixing red quantum dot material, green quantum dot material, and photoinitiator in a thermosetting glue;
  • Red quantum dot material and green quantum dot material in the first quantum dot layer are excited in blue light The red light and the green light are jointly emitted;
  • the quantum dot material in the second quantum dot layer is a quantum dot material quenched by a photoinitiator under ultraviolet light, and the quantum dot material in the second quantum dot layer Does not emit light under illumination;
  • the quantum dot color film substrate is used in a display device whose backlight is blue light;
  • the display device is a liquid crystal display device, an organic electroluminescence display device, or a quantum dot electroluminescence display device;
  • the invention further includes a filter layer disposed on the first quantum dot layer, wherein the filter layer is used to filter out light having a wavelength of less than 400 nm, and the photoinitiator of the first quantum dot layer is prevented from quenching the quantum dots under ultraviolet light. material;
  • the quantum dot layer has a thickness of 0.5-20 ⁇ m.
  • the present invention provides a method for preparing a quantum dot color film substrate and a quantum dot color film substrate.
  • a red quantum dot material, a green quantum dot material and a photoinitiator are mixed and placed in a thermosetting glue to form a quantum dot glue, and the photoinitiator itself does not destroy quantum dots.
  • the photomask is used on the blue sub-pixel region.
  • the quantum dot glue is irradiated, and the radical generated by the photoinitiator cleavage directly quenches the quantum dot material in the region, thereby obtaining a selectively quenched quantum dot layer;
  • the quantum dot color film substrate prepared by the preparation method can satisfy the display
  • the device has a high color gamut requirement, and the preparation method is simple and low in cost;
  • the quantum dot color film substrate of the invention, including the selectively quenched quantum dot layer can effectively improve the color gamut of the display device, and the preparation method thereof is simple ,low cost.
  • FIG. 1 is a schematic flow chart of a method for preparing a quantum dot color film substrate of the present invention
  • FIG. 2 is a schematic view showing the step 4 of the method for preparing a quantum dot color film substrate of the present invention
  • FIG 3 is a schematic cross-sectional structural view of a quantum dot color film substrate of the present invention.
  • the present invention first provides a method for preparing a quantum dot color film substrate, including Next steps:
  • Step 1 providing a substrate 10, the substrate 10 includes a red sub-pixel region, a green sub-pixel region, and a blue sub-pixel region;
  • Step 2 forming a patterned red color resist layer 21, a patterned green color resist layer 22, and a pattern on the substrate 10 corresponding to the red sub-pixel region, the green sub-pixel region, and the blue sub-pixel region, respectively.
  • a transparent organic photoresist layer 23 a color filter layer 20 comprising a red color resist layer 21, a green color resist layer 22, and an organic transparent photoresist layer 23;
  • Step 3 applying a layer of quantum dot glue having a thickness of 0.5-20 ⁇ m on the color filter layer 20 to thermally cure the quantum dot glue;
  • the quantum dot glue is a thermosetting glue comprising a red quantum dot material, a green quantum dot material, and a photoinitiator; the photoinitiator is an ultraviolet photoinitiator capable of quenching quantum dot material under ultraviolet light irradiation. ;
  • the quantum dot material in the quantum dot glue is one or more of a group II-VI quantum dot material and a group I-III-VI quantum dot material; preferably, the quantum in the quantum dot glue
  • the spot material is one or more of ZnCdSe 2 , CdSe, CdTe, CuInS 2 , and ZnCuInS 3 .
  • the photoinitiator is characterized in that the molecule itself does not directly affect the luminescent properties of the quantum dot material, but after ultraviolet light irradiation, the highly active free radical generated by the ultraviolet light directly annihilates the quantum dot material; preferably,
  • the photoinitiator is benzoin dimethyl ether (BDK) or methyl benzoylformate (MBF).
  • the principle of photoinitiator quenching quantum dot fluorescence is that benzoin dimethyl ether is a common ultraviolet photoinitiator, and its ultraviolet photolysis reaction is as follows.
  • benzoin dimethyl ether is widely used in the polymerization of unsaturated monomers such as acrylate, methacrylate, acryl, acrylamide, styrene, maleic acid, fumaric acid and mixtures thereof, as well as unsaturated monomers and poly Polymerization and cross-linking of oligomers such as vinyl alcohol and polyester.
  • unsaturated monomers such as acrylate, methacrylate, acryl, acrylamide, styrene, maleic acid, fumaric acid and mixtures thereof, as well as unsaturated monomers and poly Polymerization and cross-linking of oligomers such as vinyl alcohol and polyester.
  • the photoinitiator is very stable in the absence of ultraviolet light and does not affect the luminescence of quantum dots by itself, but the carbonyl radical generated by ultraviolet light irradiation is free. Bases and methyl radicals have extremely high reactivity. The presence of free radicals affects the recombination process of excited electrons and holes in quantum dot materials,
  • Step 4 as shown in FIG. 2, during the thermal curing process (generally, the thermal curing process is long and takes several hours), a photomask 50 is provided, and the photomask 50 includes a corresponding red sub-pixel region and a green sub-pixel region. An opaque portion 51 and a light-transmitting portion 52 corresponding to the blue sub-pixel region; the photomask 50 is used to irradiate the quantum dot on the blue sub-pixel region with ultraviolet light.
  • the photoinitiator in the quantum dot on the blue sub-pixel region annihilates the quantum dot material under ultraviolet light irradiation, and the quantum dot glue located on the red sub-pixel region and the green sub-pixel region is not ultraviolet Light irradiation, the quantum dot material therein is not affected in this step;
  • Step 5 After the thermal curing is completed, a selectively quenched quantum dot layer 30 is obtained; the quantum dot layer 30 includes a first quantum dot layer 31 located on the red sub-pixel region and the green sub-pixel region, and located at the a second quantum dot layer 32 on the blue sub-pixel region; the first quantum dot layer 31 emits mixed light of red light and green light under blue light excitation, due to the quantum dot material of the second quantum dot layer 32
  • the photoinitiator is quenched by ultraviolet light, and the quantum dot material in the second quantum dot layer does not emit light when illuminated by the backlight;
  • the quantum dot color filter substrate When the quantum dot color filter substrate is used for display in a blue light display device, the mixed light of red light and green light emitted by the first quantum dot layer 31 passes through the red color resist layer 21 and the green color resist.
  • the layer 22 is filtered to display red and green respectively, and the blue backlight directly passes through the second quantum dot layer 32 and the organic transparent photoresist layer 23 to be blue, thereby realizing color display and effectively improving the display color gamut index.
  • the quantum dot layer 30 does not contain a blue quantum dot material, and the blue backlight is used in combination with the organic transparent photoresist layer to reduce the material cost while improving the light utilization efficiency.
  • the method for preparing the quantum dot color film substrate of the present invention further includes a step 6 of forming a filter layer on the first quantum dot layer 31 to filter out light having a wavelength of less than 400 nm to avoid the first quantum dot.
  • the photoinitiator of layer 31 quenches the quantum dot material under ultraviolet light.
  • the selective quenching mechanism of the present invention consists in mixing a red quantum dot material, a green quantum dot material and a photoinitiator in a thermosetting glue to form a quantum dot, which does not itself destroy the fluorescent properties of the quantum dots, but After ultraviolet light irradiation, the photoinitiator is cleaved to produce a high electron-negative radical group with strong electron-withdrawing ability, capturing excited electrons, making it unable to recombine with holes, thereby quenching quantum dot fluorescence, and uniformly coating quantum dots.
  • the quantum dot glue on the blue sub-pixel region is irradiated by the mask, and the radical generated by the photoinitiator cleavage directly quenches the quantum dot material in the region, thereby obtaining selective quenching.
  • the quantum dot layer After being coated on the color filter layer, the quantum dot glue on the blue sub-pixel region is irradiated by the mask, and the radical generated by the photoinitiator cleavage directly quenches the quantum dot material in the region, thereby obtaining selective quenching.
  • the quantum dot layer is irradiated by the mask, and the radical generated by the photoinitiator cleavage directly quenches the quantum dot material in the region, thereby obtaining selective quenching.
  • the preparation method of the quantum dot color film substrate of the invention uses a simple thermosetting glue to disperse quantum dot materials and a photoinitiator to reduce the interference of the chemical environment around the quantum dot material on the light emission of the quantum dot material, and the use of the photoinitiator
  • the selective annihilation technology is created to simplify the manufacturing process while achieving high color gamut display.
  • the present invention further provides a quantum dot color film substrate, comprising: a substrate 10, a color filter layer 20 on the substrate 10, and quantum dots on the color filter layer 20.
  • a quantum dot color film substrate comprising: a substrate 10, a color filter layer 20 on the substrate 10, and quantum dots on the color filter layer 20.
  • the substrate 10 includes a red sub-pixel region, a green sub-pixel region, and a blue sub-pixel region.
  • the color filter layer 20 includes the red sub-pixel region, the green sub-pixel region, and the blue sub-pixel region. a red color resist layer 21, a green color resist layer 22, and an organic transparent photoresist layer 23;
  • the quantum dot layer 30 includes a first quantum dot layer 31 on the red sub-pixel region and the green sub-pixel region, and a second quantum dot layer 32 on the blue sub-pixel region; the quantum dot The layer 30 is formed by quantum dot glue; the quantum dot glue is obtained by mixing a red quantum dot material, a green quantum dot material, and a photoinitiator in a heat curing glue; the first quantum dot layer 31 emits red under light excitation. a mixed light of light and green light, the quantum dot material in the second quantum dot layer 32 is quenched by the photoinitiator under ultraviolet light, and the second quantum dot layer 32 does not emit excitation light;
  • the quantum dot color film substrate is used in a display device whose backlight is blue light; specifically, the quantum dot color film substrate can be used for a liquid crystal display device (LCD) or an organic electroluminescence display device (Organic Light- Emitting Display, OLED), or other types of display devices such as Quantum Dot Light Emitting Display (QLED).
  • LCD liquid crystal display device
  • OLED organic electroluminescence display device
  • QLED Quantum Dot Light Emitting Display
  • the quantum dot layer 30 has a thickness of 0.5-20 ⁇ m; when the backlight is illuminated, the red quantum dot material in the first quantum dot layer 31 emits a wavelength range of 630- under the excitation of the blue backlight. 20,000 nm red light, the green quantum dot material in the first quantum dot layer 31 emits green light having a wavelength range of 500-560 nm under the excitation of the blue backlight, and the quantum dot material of the second quantum dot layer 32 a quantum dot material that is quenched by fluorescence, and therefore does not emit light when illuminated by a backlight; and the red dot emitted by the first quantum dot layer 31 when the quantum dot color filter substrate is used for display in a display device with a backlight of blue light
  • the mixed light of the light and the green light is filtered by the red color resist layer 21 and the green color resist layer 22 to respectively display red and green colors, and the blue light backlight directly passes through the second quantum dot layer 32 and the organic transparent photores
  • the color display is realized, and the display color gamut index can be effectively improved, and the quantum dot layer 30 does not include the blue quantum dot material, and the blue backlight and the organic transparent photoresist layer are used together to improve the light utilization efficiency. Under the same circumstances The cost of materials.
  • the first quantum dot layer 31 is further provided with a filter layer to filter out light having a wavelength of less than 400 nm to avoid light of the first quantum dot layer 31.
  • the initiator quenches the quantum dot material under ultraviolet light.
  • the quantum dot color film substrate further includes a black matrix 40 on the substrate 10.
  • the quantum dot material in the quantum dot glue is one or more of a group II-VI quantum dot material and a group I-III-VI quantum dot material; preferably, the quantum in the quantum dot glue
  • the spot material is one or more of ZnCdSe 2 , CdSe, CdTe, CuInS 2 , and ZnCuInS 3 .
  • the photoinitiator is characterized in that the molecule itself does not directly affect the luminescent properties of the quantum dot material, but after ultraviolet light irradiation, the highly active free radical generated by the ultraviolet light directly annihilates the quantum dot material; preferably,
  • the photoinitiator is benzoin dimethyl ether (BDK) or methyl benzoylformate (MBF).
  • the method for preparing a quantum dot color film substrate of the present invention comprises mixing a red quantum dot material, a green quantum dot material and a photoinitiator in a thermosetting glue to form a quantum dot glue, and the photoinitiator itself is not It will destroy the fluorescent properties of the quantum dots, but after being irradiated by ultraviolet light, the photoinitiator is cleaved to have the effect of quenching quantum dot fluorescence. After the quantum dot is uniformly coated on the color filter layer, the mask is used for blue.
  • the quantum dot glue on the sub-pixel area is irradiated, and the radical generated by the photoinitiator cleavage directly quenches the quantum dot material in the region, thereby obtaining a selectively quenched quantum dot layer; the quantum dot color prepared by the preparation method
  • the film substrate can meet the requirements of the display device for high color gamut, and the preparation method is simple and low in cost; the quantum dot color film substrate of the invention, including the selectively quenched quantum dot layer, can effectively improve the color gamut of the display device.
  • the preparation method is simple and the cost is low.

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Abstract

一种量子点彩膜基板的制备方法及量子点彩膜基板。量子点彩膜基板的制备方法，包括将红色量子点材料、绿色量子点材料与光引发剂混合于热固胶中而形成量子点胶，该光引发剂本身不会破坏量子点的荧光性质，但是经紫外光照射后该光引发剂裂解而具有猝灭量子点荧光的作用，量子点胶均匀涂布在彩色滤光层（20）上后，利用光罩（50）对蓝色子像素区域上的量子点胶进行照射，光引发剂裂解产生的自由基直接猝灭该区域的量子点材料，进而得到选择性猝灭的量子点层（30）；由该制备方法制备的量子点彩膜基板能够满足显示装置对于高色域的需求，且该制备方法简单，成本低。

Description

量子点彩膜基板的制备方法及量子点彩膜基板 技术领域
本发明涉及显示技术领域，尤其涉及一种量子点彩膜基板的制备方法及量子点彩膜基板。
背景技术
随着显示技术的不断发展，人们对显示装置的显示质量要求也越来越高。目前市面上的液晶电视能表现的色域在68％-72％NTSC(National Television Standards Committee)之间，因而不能提供高品质的色彩效果。为提高液晶电视的表现色域，高色域背光技术正成为行业内研究的重点。
半导体材料从体相逐渐减小至一定临界尺寸(1～20nm)后，其载流子的波动性变得显著，运动将受限，导致动能的增加，相应的电子结构从体相连续的能级结构变成准分裂的不连续，这一现象称作量子尺寸效应。比较常见的半导体纳米粒子即量子点主要有II-VI族、II-V族以及IV-VI族量子点。这些种类的量子点都十分遵守量子尺寸效应，其性质随尺寸呈现规律性变化，例如吸收及发射波长随尺寸变化而变化。因此，半导体量子点在照明、显示器、激光器以及生物荧光标记等领域都有着十分重要的应用。
利用量子点材料具有发光光谱集中，色纯度高、且发光颜色可通过量子点材料的尺寸、结构或成分进行简易调节的这些优点将其应用在显示装置中可有效地提升显示装置的色域及色彩还原能力。
现有的显示面板，其彩膜基板包括多个像素单元，而每个像素单元又包括红色子像素单元、绿色子像素单元和蓝色子像素单元，其中，红色子像素单元具有红色滤光片，用于透过红光波段的光并过滤掉其他波段的光；绿色子像素单元具有绿色滤光片，用于透过绿光波段的光并过滤掉其他波段的光；蓝色子像素单元具有蓝色滤光片，用于透过蓝光波段的光并过滤掉其他波段的光。对于每一个子像素单元而言，由于滤光片都是透过小部分的光过滤掉大部分的光，例如，红色滤光片只透过红光波段的光过滤掉蓝光波段和绿光波段的光，光损失接近，因此，这种显示面板的光损失较大，光穿透率也较低。
发明内容
本发明的目的在于提供一种量子点彩膜基板的制备方法，通过光引发 剂实现对量子点胶内的量子点材料进行选择性猝灭，在获得高色域显示的同时简化量子点彩膜基板的制造工艺，降低生产成本。
本发明的目的还在于提供一种量子点彩膜基板，能够满足显示装置对于高色域的需求，制备工艺简单，成本低。
为实现上述目的，本发明首先提供了一种量子点彩膜基板的制备方法，包括如下步骤：
步骤1、提供基板，所述基板包括红色子像素区域、绿色子像素区域、及蓝色子像素区域；
步骤2、在所述基板上分别对应所述红色子像素区域、绿色子像素区域、及蓝色子像素区域形成图形化的红色色阻层、图形化的绿色色阻层、及图形化的有机透明光阻层；得到包含红色色阻层、绿色色阻层、及有机透明光阻层的彩色滤光层；
步骤3、在所述彩色滤光层上涂布一层量子点胶，对所述量子点胶进行热固化；
所述量子点胶为包含红色量子点材料、绿色量子点材料、及光引发剂的热固化胶；所述光引发剂为紫外光引发剂，具有紫外光照射下能够猝灭量子点材料的性能；
步骤4、在热固化过程中，提供光罩，所述光罩包括对应红色子像素区域和绿色子像素区域的不透光部分、及对应所述蓝色子像素区域的透光部分；利用所述光罩对位于所述蓝色子像素区域上的量子点胶进行紫外光照射，位于所述蓝色子像素区域上的量子点胶内的光引发剂在紫外光照射下猝灭量子点材料，位于所述红色子像素区域和绿色子像素区域上的量子点胶由于不被紫外光照射，其内的量子点材料在该步骤中不受影响；
步骤5、热固化结束后，得到选择性猝灭的量子点层；从而得到包括基板、彩色滤光膜、及量子点层的量子点彩膜基板；所述量子点层包括位于所述红色子像素区域和绿色子像素区域上的第一量子点层、及位于所述蓝色子像素区域上的第二量子点层；
所述第一量子点层内的红色量子点材料、绿色量子点材料在蓝光激发下分别发出红光与绿光；所述第二量子点层内的量子点材料在光照下不发光。
所述光引发剂为安息香双甲醚、或苯甲酰甲酸甲酯。
所述步骤3中，所述彩色滤光层上涂布量子点胶的厚度为0.5-20μm。
还包括步骤6，在所述第一量子点层上形成滤光层，以过滤掉波长小于400nm的光，避免第一量子点层的光引发剂在紫外光下猝灭量子点材料。
所述量子点胶内的量子点材料为Ⅱ-Ⅵ族量子点材料、Ⅰ-Ⅲ-Ⅵ族量子点材料中的一种或多种。
所述量子点胶内的量子点材料为ZnCdSe2，CdSe，CdTe，CuInS2，ZnCuInS3中的一种或多种。
本发明还提供一种量子点彩膜基板，包括，基板、位于所述基板上的彩色滤光层、及位于所述彩色滤光层上的量子点层；
所述基板包括红色子像素区域、绿色子像素区域、及蓝色子像素区域；所述彩色滤光层包括分别位于所述红色子像素区域、绿色子像素区域、及蓝色子像素区域上的红色色阻层、绿色色阻层、及有机透明光阻层；
所述量子点层包括位于所述红色子像素区域和绿色子像素区域上的第一量子点层、及位于所述蓝色子像素区域上的第二量子点层；所述量子点层由量子点胶形成；所述量子点胶由红色量子点材料、绿色量子点材料、及光引发剂混合于热固化胶中得到；
所述第一量子点层内的红色量子点材料、绿色量子点材料在蓝光激发下分别发出红光与绿光；所述第二量子点层内量子点材料为被光引发剂在紫外光照射下发生荧光猝灭的量子点材料，所述第二量子点层在光照下不发光；
所述量子点彩膜基板用于背光为蓝光的显示装置中。
所述显示装置为液晶显示装置、有机电致发光显示装置、或者量子点电致发光显示装置。
还包括设于所述第一量子点层上的滤光层，所述滤光层用于过滤掉波长小于400nm的光，避免第一量子点层的光引发剂在紫外光下猝灭量子点材料。
所述量子点层的厚度为0.5-20μm。
本发明还提供一种量子点彩膜基板，包括，基板、位于所述基板上的彩色滤光层、及位于所述彩色滤光层上的量子点层；
所述基板包括红色子像素区域、绿色子像素区域、及蓝色子像素区域；所述彩色滤光层包括分别位于所述红色子像素区域、绿色子像素区域、及蓝色子像素区域上的红色色阻层、绿色色阻层、及有机透明光阻层；
所述量子点层包括位于所述红色子像素区域和绿色子像素区域上的第一量子点层、及位于所述蓝色子像素区域上的第二量子点层；所述量子点层由量子点胶形成；所述量子点胶由红色量子点材料、绿色量子点材料、及光引发剂混合于热固化胶中得到；
所述第一量子点层内的红色量子点材料、绿色量子点材料在蓝光激发 下共同发出红光与绿光；所述第二量子点层内量子点材料为被光引发剂在紫外光照射下荧光猝灭的量子点材料，所述第二量子点层内的量子点材料在光照下不发光；
所述量子点彩膜基板用于背光为蓝光的显示装置中；
其中，所述显示装置为液晶显示装置、有机电致发光显示装置、或者量子点电致发光显示装置；
还包括设于所述第一量子点层上的滤光层，所述滤光层用于过滤掉波长小于400nm的光，避免第一量子点层的光引发剂在紫外光下猝灭量子点材料；
其中，所述量子点层的厚度为0.5-20μm。
本发明的有益效果：本发明提供了一种量子点彩膜基板的制备方法及量子点彩膜基板。本发明的量子点彩膜基板的制备方法，将红色量子点材料、绿色量子点材料与光引发剂混合置于热固胶中而形成量子点胶，该光引发剂本身不会破坏量子点的荧光性质，但是经紫外光照射后，该光引发剂被裂解而具有猝灭量子点荧光的作用，量子点胶均匀涂布在彩色滤光层上后，利用光罩对蓝色子像素区域上的量子点胶进行照射，光引发剂裂解产生的自由基直接猝灭该区域的量子点材料，进而得到选择性猝灭的量子点层；由该制备方法制备的量子点彩膜基板能够满足显示装置对于高色域的需求，且该制备方法简单，成本低；本发明的量子点彩膜基板，包括选择性猝灭的量子点层，能够有效提高显示装置的色域，且其制备方法简单，成本低。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其他有益效果显而易见。
附图中，
图1为本发明的量子点彩膜基板的制备方法的流程示意图；
图2为本发明的量子点彩膜基板的制备方法的步骤4的示意图；
图3为本发明的量子点彩膜基板的剖面结构示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，本发明首先提供一种量子点彩膜基板的制备方法，包括如 下步骤：
步骤1、提供基板10，所述基板10包括红色子像素区域、绿色子像素区域、及蓝色子像素区域；
步骤2、在所述基板10上分别对应所述红色子像素区域、绿色子像素区域、及蓝色子像素区域形成图形化的红色色阻层21、图形化的绿色色阻层22、及图形化的有机透明光阻层23；得到包含红色色阻层21、绿色色阻层22、及有机透明光阻层23的彩色滤光层20；
步骤3、在所述彩色滤光层20上涂布一层厚度为0.5-20μm的量子点胶，对所述量子点胶进行热固化；
所述量子点胶为包含红色量子点材料、绿色量子点材料、及光引发剂的热固化胶；所述光引发剂为紫外光引发剂，具有紫外光照射下能够猝灭量子点材料的性能；
具体的，所述量子点胶内的量子点材料为Ⅱ-Ⅵ族量子点材料、Ⅰ-Ⅲ-Ⅵ族量子点材料中的一种或多种；优选的，所述量子点胶内的量子点材料为ZnCdSe2，CdSe，CdTe，CuInS2，ZnCuInS3中的一种或多种。
具体的，所述光引发剂的特征为其分子本身不会直接影响量子点材料的发光性质，但是已经紫外光照射后，其产生的高活性自由基会直接猝灭量子点材料；优选的，所述光引发剂为安息香双甲醚(BDK)、或苯甲酰甲酸甲酯(MBF)。
其中，光引发剂猝灭量子点荧光的原理为，以安息香双甲醚为例，安息香双甲醚是一种常见的紫外光引发剂，其紫外光裂解反应式如下，
Figure PCTCN2015099107-appb-000001
，安息香双甲醚广泛适用于丙烯酸酯、甲基丙烯酸酯、丙烯睛、丙烯酰胺、苯乙烯、马来酸、富马酸等不饱和单体及其混合物的聚合，以及不饱和单体与聚乙烯醇、聚酯等低聚物的聚合与交联，该光引发剂在无紫外光照射情况下十分稳定且自身不会对量子点发光产生影响，但是经紫外光照射后，产生的羰基自由基及甲基自由基等具有极高的反应活性，自由基的存在会影响量子点材料受激电子与空穴的复合过程，从而猝灭量子点荧光。
步骤4、如图2所示，在热固化过程中(一般热固化过程较长，需要数个小时)，提供光罩50，所述光罩50包括对应红色子像素区域和绿色子像素区域的不透光部分51、及对应所述蓝色子像素区域的透光部分52；利用所述光罩50对位于所述蓝色子像素区域上的量子点胶进行紫外光照射，位 于所述蓝色子像素区域上的量子点胶内的光引发剂在紫外光照射下猝灭量子点材料，位于所述红色子像素区域和绿色子像素区域上的量子点胶由于不被紫外光照射，其内的量子点材料在该步骤中不受影响；
步骤5、热固化结束后，得到选择性猝灭的量子点层30；所述量子点层30包括位于所述红色子像素区域和绿色子像素区域上的第一量子点层31、及位于所述蓝色子像素区域上的第二量子点层32；所述第一量子点层31在蓝光激发下发出红光与绿光的混合光，由于所述第二量子点层32的量子点材料在步骤4中被光引发剂在紫外光照射下荧光猝灭，所述第二量子点层内的量子点材料在背光照射时不发光；
则所述量子点彩膜基板用于背光为蓝光的显示装置中而进行显示时，所述第一量子点层31发出的红光与绿光的混合光经红色色阻层21和绿色色阻层22过滤而分别显红色、绿色，蓝光背光直接穿过第二量子点层32、有机透明光阻层23而显蓝色，从而实现了彩色显示，并能够有效提高显示色域指数，且所述量子点层30内不包含蓝色量子点材料，将蓝光背光与有机透明光阻层的搭配使用，在提高光利用率的情况下同时缩减了材料成本。
经过步骤5后，第一量子点层31内同样均匀分布着光引发剂，固化处理之后很大程度上会抑制该光引发剂的光化学反应，但为了保证第一量子点层31内量子点材料保持稳定发光，本发明的量子点彩膜基板的制备方法还包括步骤6，在所述第一量子点层31上还形成滤光层，以过滤掉波长小于400nm的光，避免第一量子点层31的光引发剂在紫外光下猝灭量子点材料。
本发明选择性猝灭机理在于，将红色量子点材料、绿色量子点材料与光引发剂混合置于热固性胶水中而形成量子点胶，该光引发剂本身不会破坏量子点的荧光性质，但是紫外光照射后，光引发剂裂解产生具有强吸电子能力的高电负性自由基基团，捕获受激电子，使其无法与空穴复合，从而猝灭量子点荧光，量子点胶均匀涂布在彩色滤光层上后，利用光罩对蓝色子像素区域上的量子点胶进行照射，光引发剂裂解产生的自由基直接猝灭该区域的量子点材料，进而得到选择性猝灭的量子点层。
本发明的量子点彩膜基板的制备方法，使用组成简单的热固化胶分散量子点材料及光引发剂，减少量子点材料周围化学环境对量子点材料发光的干扰，通过对光引发剂的使用造就了选择性猝灭技术，在获得高色域显示的同时，又简化了制造工艺。
如图3所示，本发明还提供一种量子点彩膜基板，包括，基板10、位于所述基板10上的彩色滤光层20、及位于所述彩色滤光层20上的量子点 层30；
所述基板10包括红色子像素区域、绿色子像素区域、及蓝色子像素区域；所述彩色滤光层20包括分别位于所述红色子像素区域、绿色子像素区域、及蓝色子像素区域上的红色色阻层21、绿色色阻层22、及有机透明光阻层23；
所述量子点层30包括位于所述红色子像素区域和绿色子像素区域上的第一量子点层31、及位于所述蓝色子像素区域上的第二量子点层32；所述量子点层30由量子点胶形成；所述量子点胶由红色量子点材料、绿色量子点材料、及光引发剂混合于热固化胶中得到；所述第一量子点层31在光激发下发出红光与绿光的混合光，所述第二量子点层32内的量子点材料被光引发剂在紫外光照射下猝灭，所述第二量子点层32不发出激发光；
所述量子点彩膜基板用于背光为蓝光的显示装置中；具体的，所述量子点彩膜基板可用于液晶显示装置(Liquid Crystal Display，LCD)、有机电致发光显示装置(Organic Light-Emitting Display，OLED)、或者量子点电致发光显示装置(Quantum Dot Light Emitting Display，QLED)等其他类型的显示装置中。
具体的，所述量子点层30的厚度为0.5-20μm；在背光照射时，其中，所述第一量子点层31内的红色量子点材料在蓝光背光的光激发下发出波长范围为630-690nm的红光，所述第一量子点层31内的绿色量子点材料在蓝光背光的光激发下发出波长范围为500-560nm的绿光，而所述第二量子点层32的量子点材料为荧光猝灭的量子点材料，因此在背光照射时不发光；则所述量子点彩膜基板用于背光为蓝光的显示装置中而进行显示时，所述第一量子点层31发出的红光与绿光的混合光经红色色阻层21和绿色色阻层22过滤而分别显红色、绿色，蓝光背光直接穿过第二量子点层32、有机透明光阻层23而显蓝色，从而实现了彩色显示，并能够有效提高显示色域指数，且所述量子点层30内不包含蓝色量子点材料，将蓝光背光与有机透明光阻层的搭配使用，在提高光利用率的情况下同时缩减了材料成本。
为了保证第一量子点层31内量子点材料保持稳定发光，所述第一量子点层31上还设有滤光层，以过滤掉波长小于400nm的光，避免第一量子点层31的光引发剂在紫外光下猝灭量子点材料。
具体的，所述量子点彩膜基板还包括位于所述基板10上的黑色矩阵40。
具体的，所述量子点胶内的量子点材料为Ⅱ-Ⅵ族量子点材料、Ⅰ-Ⅲ-Ⅵ族量子点材料中的一种或多种；优选的，所述量子点胶内的量子点材料为ZnCdSe2，CdSe，CdTe，CuInS2，ZnCuInS3中的一种或多种。
具体的，所述光引发剂的特征为其分子本身不会直接影响量子点材料的发光性质，但是已经紫外光照射后，其产生的高活性自由基会直接猝灭量子点材料；优选的，所述光引发剂为安息香双甲醚(BDK)、或苯甲酰甲酸甲酯(MBF)。
综上所述，本发明的量子点彩膜基板的制备方法，将红色量子点材料、绿色量子点材料与光引发剂混合置于热固胶中而形成量子点胶，该光引发剂本身不会破坏量子点的荧光性质，但是经紫外光照射后，该光引发剂被裂解而具有猝灭量子点荧光的作用，量子点胶均匀涂布在彩色滤光层上后，利用光罩对蓝色子像素区域上的量子点胶进行照射，光引发剂裂解产生的自由基直接猝灭该区域的量子点材料，进而得到选择性猝灭的量子点层；由该制备方法制备的量子点彩膜基板能够满足显示装置对于高色域的需求，且该制备方法简单，成本低；本发明的量子点彩膜基板，包括选择性猝灭的量子点层，能够有效提高显示装置的色域，且其制备方法简单，成本低。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (11)

  1. 一种量子点彩膜基板的制备方法，包括如下步骤：
    步骤1、提供基板，所述基板包括红色子像素区域、绿色子像素区域、及蓝色子像素区域；
    步骤2、在所述基板上分别对应所述红色子像素区域、绿色子像素区域、及蓝色子像素区域形成图形化的红色色阻层、图形化的绿色色阻层、及图形化的有机透明光阻层；得到包含红色色阻层、绿色色阻层、及有机透明光阻层的彩色滤光层；
    步骤3、在所述彩色滤光层上涂布一层量子点胶，对所述量子点胶进行热固化；
    所述量子点胶为包含红色量子点材料、绿色量子点材料、及光引发剂的热固化胶；所述光引发剂为紫外光引发剂，具有紫外光照射下能够猝灭量子点材料的性能；
    步骤4、在热固化过程中，提供光罩，所述光罩包括对应红色子像素区域和绿色子像素区域的不透光部分、及对应所述蓝色子像素区域的透光部分；利用所述光罩对位于所述蓝色子像素区域上的量子点胶进行紫外光照射，位于所述蓝色子像素区域上的量子点胶内的光引发剂在紫外光照射下猝灭量子点材料，位于所述红色子像素区域和绿色子像素区域上的量子点胶由于不被紫外光照射，其内的量子点材料在该步骤中不受影响；
    步骤5、热固化结束后，得到选择性猝灭的量子点层；从而得到包括基板、彩色滤光膜、及量子点层的量子点彩膜基板；所述量子点层包括位于所述红色子像素区域和绿色子像素区域上的第一量子点层、及位于所述蓝色子像素区域上的第二量子点层；
    所述第一量子点层内的红色量子点材料、绿色量子点材料在蓝光激发下分别发出红光与绿光；所述第二量子点层内的量子点材料在光照下不发光。
  2. 如权利要求1所述的量子点彩膜基板的制备方法，其中，所述光引发剂为安息香双甲醚、或苯甲酰甲酸甲酯。
  3. 如权利要求1所述的量子点彩膜基板的制备方法，其中，所述步骤3中，所述彩色滤光层上涂布量子点胶的厚度为0.5-20μm。
  4. 如权利要求1所述的量子点彩膜基板的制备方法，还包括步骤6，在所述第一量子点层上形成滤光层，以过滤掉波长小于400nm的光，避免 第一量子点层的光引发剂在紫外光下猝灭量子点材料。
  5. 如权利要求1所述的量子点彩膜基板的制备方法，其中，所述量子点胶内的量子点材料为Ⅱ-Ⅵ族量子点材料、Ⅰ-Ⅲ-Ⅵ族量子点材料中的一种或多种。
  6. 如权利要求5所述的量子点彩膜基板的制备方法，其中，所述量子点胶内的量子点材料为ZnCdSe2，CdSe，CdTe，CuInS2，ZnCuInS3中的一种或多种。
  7. 一种量子点彩膜基板，包括，基板、位于所述基板上的彩色滤光层、及位于所述彩色滤光层上的量子点层；
    所述基板包括红色子像素区域、绿色子像素区域、及蓝色子像素区域；所述彩色滤光层包括分别位于所述红色子像素区域、绿色子像素区域、及蓝色子像素区域上的红色色阻层、绿色色阻层、及有机透明光阻层；
    所述量子点层包括位于所述红色子像素区域和绿色子像素区域上的第一量子点层、及位于所述蓝色子像素区域上的第二量子点层；所述量子点层由量子点胶形成；所述量子点胶由红色量子点材料、绿色量子点材料、及光引发剂混合于热固化胶中得到；
    所述第一量子点层内的红色量子点材料、绿色量子点材料在蓝光激发下共同发出红光与绿光；所述第二量子点层内量子点材料为被光引发剂在紫外光照射下荧光猝灭的量子点材料，所述第二量子点层内的量子点材料在光照下不发光；
    所述量子点彩膜基板用于背光为蓝光的显示装置中。
  8. 如权利要求7所述的量子点彩膜基板，其中，所述显示装置为液晶显示装置、有机电致发光显示装置、或者量子点电致发光显示装置。
  9. 如权利要求7所述的量子点彩膜基板，还包括设于所述第一量子点层上的滤光层，所述滤光层用于过滤掉波长小于400nm的光，避免第一量子点层的光引发剂在紫外光下猝灭量子点材料。
  10. 如权利要求7所述的量子点彩膜基板，其中，所述量子点层的厚度为0.5-20μm。
  11. 一种量子点彩膜基板，包括，基板、位于所述基板上的彩色滤光层、及位于所述彩色滤光层上的量子点层；
    所述基板包括红色子像素区域、绿色子像素区域、及蓝色子像素区域；所述彩色滤光层包括分别位于所述红色子像素区域、绿色子像素区域、及蓝色子像素区域上的红色色阻层、绿色色阻层、及有机透明光阻层；
    所述量子点层包括位于所述红色子像素区域和绿色子像素区域上的第 一量子点层、及位于所述蓝色子像素区域上的第二量子点层；所述量子点层由量子点胶形成；所述量子点胶由红色量子点材料、绿色量子点材料、及光引发剂混合于热固化胶中得到；
    所述第一量子点层内的红色量子点材料、绿色量子点材料在蓝光激发下共同发出红光与绿光；所述第二量子点层内量子点材料为被光引发剂在紫外光照射下荧光猝灭的量子点材料，所述第二量子点层内的量子点材料在光照下不发光；
    所述量子点彩膜基板用于背光为蓝光的显示装置中；
    其中，所述显示装置为液晶显示装置、有机电致发光显示装置、或者量子点电致发光显示装置；
    还包括设于所述第一量子点层上的滤光层，所述滤光层用于过滤掉波长小于400nm的光，避免第一量子点层的光引发剂在紫外光下猝灭量子点材料；
    其中，所述量子点层的厚度为0.5-20μm。
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