WO2017071365A1 - 数字化驱动的igbt电流检测系统及其检测方法 - Google Patents

数字化驱动的igbt电流检测系统及其检测方法 Download PDF

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WO2017071365A1
WO2017071365A1 PCT/CN2016/093903 CN2016093903W WO2017071365A1 WO 2017071365 A1 WO2017071365 A1 WO 2017071365A1 CN 2016093903 W CN2016093903 W CN 2016093903W WO 2017071365 A1 WO2017071365 A1 WO 2017071365A1
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igbt
module
current
temperature
junction temperature
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French (fr)
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白建成
客金坤
贺之渊
魏晓光
张升
高阳
杨兵建
周万迪
陈龙龙
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Global Energy Interconnection Research Institute Co Ltd
State Grid Corp of China SGCC
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Global Energy Interconnection Research Institute Co Ltd
State Grid Corp of China SGCC
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/0092—Measuring current only

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  • the invention relates to a power electronic device technology in the field of electrical communication, and more particularly to a digitally driven insulated gate bipolar transistor (IGBT) current detecting system and a detecting method thereof.
  • IGBT insulated gate bipolar transistor
  • Digital drives have become a new trend in the development of IGBT drivers in recent years, and the advantages are even more pronounced in IGBT devices with high power.
  • the digital drive is highly flexible compared to the analog drive, and can be updated with different control features; precise control, precise timing control, perfect critical protection; good consistency and environmental stability, digital drive control characteristics are not subject to resistors and capacitors ( RC) Influence of parameter differences, independent of temperature changes.
  • the current IGBT current detection method uses a current sensor. Although the method is accurate, there are many disadvantages, such as a high cost of the current sensor, a large volume, and inconvenient installation.
  • high-power multi-IGBT systems such as modular multilevel converters (MMCs)
  • MMCs modular multilevel converters
  • the system may require hundreds of high-power IGBTs, and it is difficult to detect so many IGBT currents with current sensors.
  • the object of the present invention is to provide a digitally driven IGBT current detecting system and a detecting method thereof, which can flexibly detect an IGBT current, and has a multi-stage opening mode and more protection modes.
  • the present invention adopts the following technical solutions:
  • Embodiments of the present invention provide a digitally driven IGBT current detecting system including a main control module; the main control module includes a programmable logic module and a control module;
  • the programmable logic module is configured as fault detection, fault protection, multi-stage of the IGBT module Drive logic and information return;
  • the control module is configured to perform detection of the IGBT on current and the junction temperature of the IGBT module, and transmit the calculation results of the on current and the junction temperature detection to the programmable logic module through the high speed bus.
  • the programmable logic module includes a fault detection module, a protection logic module, a drive logic module, a gate drive array module, and a transmission module; the fault detection module is configured to complete fault detection of the IGBT module; the protection logic module is configured to The IGBT module in fault is protected; the driving logic module is configured to drive an IGBT module; the gate-level driving array module is configured to implement multi-stage turn-on and turn-off of the IGBT; and the transmitting module is configured to be the IGBT module The on current, junction temperature and operating state are fed back to the upper control module.
  • the control module includes a voltage detection module, a temperature detection module, and a current detection module; the voltage detection module is configured to acquire the on voltage drop V ce information of the IGBT module; and the temperature detection module acquires temperature information of the IGBT module heat sink; The current detecting module is configured to acquire the temperature information and the turn-on voltage drop V ce information; calculate a current flowing by the IGBT module and the junction temperature and transmit the current and junction temperature to the programmable logic module.
  • the main control module further includes a digital-to-analog conversion module, a voltage acquisition module and a temperature acquisition module, and the digital-to-analog conversion module is configured to convert the analog quantity of the temperature of the IGBT module heat sink and the analog quantity of the IGBT module's conduction voltage drop V ce
  • the conversion result is sent to the control module;
  • the voltage collection module is configured to acquire an analog quantity of the conduction voltage drop V ce of the IGBT module;
  • the temperature acquisition module is configured to collect the IGBT module The analog quantity of the temperature of the heat sink.
  • the programmable logic module is a field programmable gate array FPGA; the control module is a microcontroller, and a high stability, high security microsemi FPGA that simultaneously integrates both functions is selected.
  • Embodiments of the present invention also provide a method for detecting a digitally driven IGBT current detecting system, including:
  • the calculation process of the on current and junction temperature detection includes:
  • the heat sink temperature T heatsink of the IGBT is collected, and a ⁇ T is superposed as the assumed IGBT junction temperature T j ;
  • the sum of the conduction loss P cond and the switching loss P sw is the total loss P tot1 at the current assumed junction temperature;
  • the total loss of the IGBT P tot2 can be obtained inversely ;
  • the ⁇ T corresponding to the gap threshold is determined as the temperature difference between the IGBT module chip and the heat sink, and the on-current of the IGBT is obtained in combination with the collected V ce voltage.
  • V ce(sat) is the saturation voltage of the IGBT
  • F Ic (V cesat, T j ) is the IGBT saturation voltage and the junction temperature T j inversely determining the on-current I c Function representation
  • f sw is the IGBT switching frequency
  • E on is the IGBT turn- on loss
  • E off is the IGBT turn-off loss
  • F Eon (I c , T j ) is the junction temperature T j and the on-current I c and E on F Eoff (I c , T j ) is a relationship between the junction temperature T j and the on currents I c and E off .
  • the total loss of the IGBT P tot2 is calculated again using the following formula.
  • the junction temperature T j of the IGBT is calculated as follows:
  • ⁇ T jc is the temperature difference from chip to case
  • ⁇ T ch is the temperature difference from the case to the heat sink
  • R th(jc) IGBT is the thermal resistance of the IGBT chip to the case
  • R th(ch) IGBT is the thermal resistance of the case to the heat sink
  • P tot2 (T j - T heatsink ) / (R th (jc) IGBT + R th (ch) IGBT );
  • I c F Ic (V cesat, T j ).
  • the present invention provides the following technical effects with the following excellent effects.
  • the technical scheme of the present invention can specifically select the main control chip of the digital IGBT driving board, and integrate the high-performance FPGA and the ARM with a single chip, and the two cooperate with each other to complete the monitoring and control of the IGBT;
  • the technical solution of the invention can directly detect the IGBT current, thereby eliminating the current sensor, especially in the complex high-power IGBT system, and the advantage is obvious;
  • the technical solution of the invention effectively estimates the junction temperature and current of the IGBT by collecting the temperature of the outer casing of the IGBT and using an iterative method, thereby effectively performing over-temperature protection and current protection on the IGBT;
  • the technical solution of the present invention can evaluate the performance of the current IGBT by monitoring the conduction loss, switching loss and junction temperature of the IGBT, and can predict the quality of the IGBT in advance.
  • FIG. 1 is a block diagram of a digital IGBT drive control according to an embodiment of the present invention.
  • FIG. 2 is a graph showing a conduction characteristic of an IGBT of 3300V/1500A according to an embodiment of the present invention
  • FIG. 3 is a graph showing a switching loss characteristic of an IGBT of 3300V/1500A according to an embodiment of the present invention
  • FIG. 4 is a schematic flowchart of repeated iterations according to an embodiment of the present invention.
  • Embodiments of the present invention provide a digitally driven IGBT current detecting system and a detecting method thereof.
  • the system includes the integrated logic programmable gate array (FPGA, Field-Programmable Gate) of the digital driving board as shown in FIG. Array) and ARM's single-chip high-performance CPU, FPGA completes nanosecond (ns) high-speed input/output (I/O, Input/Output) control, accurate IGBT fault detection, fault protection, multi-stage drive logic and information The return function, etc.; the high-performance ARM module completes the complex current detection algorithm, and transmits the calculation result to the FPGA through the internal high-speed bus of the CPU, and the FPGA completes the logic judgment and uploads the IGBT current information.
  • FPGA integrated logic programmable gate array
  • I/O input/output
  • I/Output input/output
  • the high-performance ARM module completes the complex current detection algorithm, and transmits the calculation result to the FPGA through the internal high-speed bus of the
  • the digital IGBT driver board obtains the temperature information of the IGBT module heat sink through the temperature sensor, which is recorded as T heatsink ; converts the temperature analog quantity and the IGBT turn-on voltage drop V ce into digital information by using a high-precision differential isolation analog-digital conversion chip.
  • the conversion result is sent to a microcontroller (MCU).
  • the MCU is an ARM. Based on the information of T heatsink and V ce , the MCU uses the current detection algorithm to estimate the current flowing through the IGBT.
  • the FPGA includes a fault detection module, a protection logic module, a drive logic module, and a gate Driving the array module and the transmission module;
  • the fault detection module is configured to complete fault detection of the IGBT module;
  • the protection logic module is configured to protect the faulty IGBT module;
  • the drive logic module is configured to drive the IGBT module;
  • the gate-level drive array module is configured to implement multi-stage turn-on and turn-off of the IGBT;
  • the transmission module is a return fiber, configured to feed back the on-current, junction temperature and working state of the IGBT module to the upper computer (corresponding to the upper control) Module).
  • the control system communicates with the host computer through high speed fiber.
  • the ARM includes a voltage detecting module, a temperature detecting module, and a current detecting module; the voltage detecting module is configured to acquire information of an ON voltage drop V ce of the IGBT module; and the temperature detecting module acquires temperature information of the IGBT module heat sink; The current detection module is configured to acquire the temperature information and the turn-on voltage drop V ce information; calculate a current flowing through the IGBT module and the junction temperature and transmit the current and junction temperature to the FPGA.
  • the main control chip further includes a digital-to-analog conversion module, a voltage acquisition module and a temperature acquisition module, and the digital-to-analog conversion module is configured to convert the analog quantity of the temperature of the IGBT module heat sink and the analog quantity of the IGBT module's conduction voltage drop V ce
  • the conversion result is sent to the ARM
  • the voltage collecting module is configured to acquire an analog quantity of the turn-on voltage drop V ce of the IGBT module
  • the temperature collecting module is configured to collect the heat dissipation of the IGBT module The analog quantity of the temperature of the piece.
  • FIG. 2 - Figure 3 shows the IGBT characteristic curve of 3300V/1500A. Based on this IGBT, the current detection method of digital driving is introduced.
  • Figure 2 shows the IGBT turn-on characteristic. The relationship between V ce(sat) and I c can be approximated by the linear method in the vicinity of the rated current of the IGBT:
  • V ce (sat) (V ce0 + ⁇ V ce / ⁇ I c) ⁇ I c (1)
  • the magnitude of the IGBT saturation voltage is related to the passing current I c , the junction temperature T j of the chip, and the gate voltage V ge .
  • the driving voltage of V ge is fixed. Therefore, the IGBT saturation voltage, the junction temperature T j of the chip can be reversed to determine the on current, and the function is abbreviated as follows:
  • I c F Ic (V cesat, T j ) (2)
  • d is the on-duty of the IGBT.
  • Figure 3 shows the IGBT switching loss characteristic curve.
  • the breaking loss of the IGBT has a great relationship with the test conditions.
  • Different driver boards have different resistance switching modes.
  • the switching on-off resistance and shutdown resistance are also different.
  • the actual drive board measures switching losses at different temperatures.
  • the IGBT turn- on loss E on and the IGBT turn-off loss E off can be approximately regarded as being proportional to I c .
  • the switching loss of the IGBT is related to the on-current I c , the junction temperature T j of the chip, and the gate voltage V ge .
  • the driving voltage of V ge is fixed.
  • T j the higher the IGBT switching losses; IGBT conduction current higher, the higher the IGBT switching losses.
  • the total loss of the IGBT P sw can be calculated:
  • the IGBT on-current I c is obtained according to the calculation, and the turn-off loss of the IGBT can be obtained by using the relationship between E on and E off and T j and I c .
  • the IGBT module heat sink temperature information T heatsink is obtained by a high-precision temperature sensor. Since the temperature of the heat sink is slightly fluctuated due to the periodic conduction of the IGBT, the average temperature of the heat sink is generally selected.
  • the junction temperature T j of the IGBT is calculated as follows:
  • ⁇ T jc is the temperature difference from the chip to the outer casing
  • ⁇ T ch is the temperature difference from the outer casing to the heat sink
  • R th(jc) IGBT is the thermal resistance of the IGBT chip to the outer casing
  • R th(ch) IGBT is the thermal resistance of the case to the heat sink
  • FIG 4 is a flow chart of iterative iteration calculation, which is completed by high-performance ARM.
  • the digital driver board collects the heat sink temperature T heatsink of the IGBT, superimposes a small ⁇ T, as a hypothetical IGBT junction temperature T j , using T j and
  • the collected V ce voltage is calculated from the IGBT conduction loss P cond and the switching loss P sw according to equations (3) and (6), respectively, and the sum is the total loss P tot1 at the current assumed junction temperature.
  • the junction temperature T j and the thermal resistance of the IGBT can be used to inversely determine the total loss of the IGBT P tot2 , and compare P tot1 with P tot2 .
  • the ⁇ T can be continuously increased. Until the calculation results of P tot1 and P tot2 are close to the gap, the difference is less than the gap threshold. At this time, ⁇ T is the temperature difference between the IGBT chip and the heat sink, and then the collected V ce voltage is used. Finally, the on current of the IGBT is obtained by using Equation 2. .

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Abstract

一种数字化驱动的IGBT电流检测系统及其检测方法，所述系统包括主控制模块；所述主控制模块包括可编程逻辑模块和控制模块；所述可编程逻辑模块配置为进行IGBT模块的故障检测、故障保护、多段式驱动逻辑及信息回报；所述控制模块配置为完成IGBT导通电流和IGBT模块结温的检测，并将导通电流和结温检测的结果通过高速总线传输给所述可编程逻辑模块。所述检测方法能够灵活检测IGBT导通电流。

Description

数字化驱动的IGBT电流检测系统及其检测方法 技术领域
本发明涉及电通信领域的电力电子器件技术，更具体涉及一种数字化驱动的绝缘栅双极型晶体管(IGBT，Insulated Gate Bipolar Transistor)电流检测系统及其检测方法。
背景技术
数字驱动近些年来成为IGBT驱动发展的新趋势，而且在功率大的IGBT器件上优势更加明显。数字驱动相对模拟驱动来具有灵活性高，可以通过更新程序实现不同控制特性；控制精确，精确的时序控制，完美的关键保护；一致性和环境稳定性好，数字驱动控制特性不受电阻电容(RC)参数差异影响，不受温度变化影响。
通常的IGBT电流检测方法采用电流传感器，虽然该方法测量精确，但是存在众多缺点，比如电流传感器的成本高，体积大，安装不方便。对于高压大功率多IGBT系统，比如模块化多电平变换器(MMC)，该系统可能需要几百个大功率IGBT，用电流传感器检测这么多IGBT电流难以实现。
发明内容
本发明的目的是提供一种数字化驱动的IGBT电流检测系统及其检测方法，灵活检测IGBT电流，具有多段式开通方式和更多保护方式。
为实现上述目的，本发明采用以下技术方案：
本发明实施例提供一种数字化驱动的IGBT电流检测系统，包括主控制模块；所述主控制模块包括可编程逻辑模块和控制模块；
所述可编程逻辑模块配置为IGBT模块的故障检测、故障保护、多段式 驱动逻辑及信息回报；
所述控制模块配置为完成IGBT导通电流和IGBT模块结温的检测，并将导通电流和结温检测的计算结果通过高速总线传输给所述可编程逻辑模块。
所述可编程逻辑模块包括故障检测模块、保护逻辑模块、驱动逻辑模块、门极驱动阵列模块和传输模块；所述故障检测模块配置为完成IGBT模块的故障检测；所述保护逻辑模块配置为对处于故障的所述IGBT模块进行保护；所述驱动逻辑模块配置为驱动IGBT模块；所述门级驱动阵列模块配置为实现IGBT的多段式开通关断；所述传输模块配置为将所述IGBT模块的导通电流，结温和工作状态反馈至上位控制模块。
所述控制模块包括电压检测模块、温度检测模块和电流检测模块；所述电压检测模块配置为获取IGBT模块的导通压降Vce信息；所述温度检测模块获取IGBT模块散热片的温度信息；所述电流检测模块配置为获取所述温度信息和导通压降Vce信息；计算IGBT模块流过的电流和所述结温并将所述电流和结温传送至所述可编程逻辑模块。
所述主控制模块还包括数模转换模块、电压采集模块和温度采集模块，数模转换模块配置为将IGBT模块散热片的温度的模拟量以及IGBT模块的导通压降Vce的模拟量转换为数字量信息，将转换结果发送给所述控制模块；所述电压采集模块配置为采集所述IGBT模块的导通压降Vce的模拟量；所述温度采集模块配置为采集所述IGBT模块散热片的温度的模拟量。
所述可编程逻辑模块为现场可编程门阵列FPGA；所述控制模块为微控制器，选用同时集成两者功能的、高稳定性的、高安全性的microsemi公司的FPGA。
本发明实施例还提供一种数字化驱动的IGBT电流检测系统的检测方法，包括：
获取IGBT模块散热片的温度Theatsink模拟量信息；
获取IGBT模块导通压降Vce模拟量信息；
将所述模拟量信息转换为数字量信息；
根据导通压降Vce数字量信息和温度Theatsink数字量信息检测所述IGBT模块的导通电流和IGBT模块的结温并将所述导通电流和结温检测的计算结果通过高速总线传输给所述可编辑模块。
所述导通电流和结温检测的计算过程包括：
将采集到IGBT的散热片温度Theatsink，叠加一个ΔT，作为假设的IGBT结温Tj；
利用所述Tj和采集的Vce电压，分别计算出IGBT的导通损耗Pcond和开关损耗Psw；
将所述导通损耗Pcond和开关损耗Psw的求和为当前假设结温下的总损耗Ptot1；
利用所述结温Tj和IGBT模块的热阻可反求出IGBT总损耗Ptot2；
将Ptot1与Ptot2相比较，如果两者数值差距超出差距阈值，继续增大ΔT，直到Ptot1和Ptot2的计算结果的差值小于差距阈值；
将小于差距阈值对应的ΔT确定为IGBT模块芯片到散热片的温差，再结合所述采集的Vce电压，求得IGBT的导通电流。
利用所述Tj和采集的Vce电压，分别通过下式计算出IGBT的导通损耗Pcond和开关损耗Psw：
Pcond＝d×Vce(sat)×FIc(Vcesat，Tj)
其中，d为IGBT模块的导通占空比，Vce(sat)为IGBT的饱和电压，FIc(Vcesat，Tj)为IGBT饱和电压和结温Tj反求出导通电流Ic的函数表示；
Psw＝fsw x(Eon+Eoff)＝fsw x(FEon(Ic,Tj)+FEoff(Ic,Tj))
其中，fsw为IGBT开关频率，Eon为IGBT开通损耗，Eoff为IGBT关断 损耗，FEon(Ic,Tj)为结温Tj、导通电流Ic与Eon的关系曲线，FEoff(Ic,Tj)为结温Tj、导通电流Ic和Eoff的关系曲线。
因此，求得当前IGBT总的损耗Ptot1为Pcond与Psw之和。
利用IGBT模块散热片温度信息Theatsink和IGBT模块的热阻利用下面公式再次计算出IGBT总的损耗Ptot2。
IGBT的结温Tj计算公式如下：
Tj＝ΔTjc+ΔTch+Theatsink＝Ptot2(Rth(j-c)IGBT+Rth(c-h)IGBT)+Theatsink；
ΔTjc为芯片到外壳的温差；ΔTch为外壳到散热片的温差；Rth(j-c)IGBT为IGBT芯片到外壳的热阻；Rth(c-h)IGBT为外壳到散热片的热阻；
假设IGBT的结温为Tj，可以反求出IGBT总的损耗，计算公式如下：
Ptot2＝(Tj-Theatsink)/(Rth(j-c)IGBT+Rth(c-h)IGBT)；
通过对比两种IGBT总损耗的计算结果，最终利用不断迭代的方式计算出所述IGBT的导通电流通过下式确定：
Ic＝FIc(Vcesat，Tj)。
和最接近的相关技术比，本发明提供技术方案具有以下优异效果
1、本发明技术方案对数字化IGBT驱动板主控制芯片的可进行特别选择，单芯片集成高性能的FPGA和ARM，两者相互配合完成IGBT的监测和控制；
2、本发明技术方案能够直接检测IGBT电流，从而省去了电流传感器，尤其是在复杂的大功率IGBT系统，优势很明显；
3、本发明技术方案通过采集IGBT的外壳温度以及利用迭代方式推算出IGBT的结温和电流，从而有效的对IGBT进行过温保护和电流保护；
4、本发明技术方案通过监测IGBT的导通损耗，开关损耗以及结温，可以评估当前IGBT的性能，进而能提前预判IGBT的好坏。
附图说明
图1为本发明实施例数字化IGBT驱动控制框图；
图2为本发明实施例中3300V/1500A的IGBT导通特性曲线图；
图3为本发明实施例中3300V/1500A的IGBT开关损耗特性曲线图；
图4为本发明实施例反复迭代的流程示意图。
具体实施方式
下面结合实施例对发明作进一步的详细说明。
发明人在实施本发明的过程中发现，现今的IGBT驱动板，无论是数字驱动还是模拟驱动都没有集成IGBT电流检测功能，直接通过数字化驱动板估测IGBT的导通电流将是很好的选择。
实施例1：
本发明实施例提供一种数字化驱动的IGBT电流检测系统及其检测方法，所述系统包括如图1所示，数字化驱动板的主控芯片采用集成逻辑可编程门阵列(FPGA，Field－Programmable Gate Array)和ARM的单芯片高性能CPU，FPGA完成纳秒(ns)级高速输入输出(I/O，Input/Output)控制，精确的完成IGBT的故障检测，故障保护，多段式驱动逻辑及信息回报功能等；高性能ARM模块完成复杂的电流检测算法，并将计算结果通过CPU内部高速总线传输给FPGA，由FPGA完成逻辑判断和上传IGBT电流信息。
数字化IGBT驱动板通过温度传感器获取IGBT模块散热片的温度信息，记作Theatsink；利用高精度差分隔离模数转换芯片，将温度的模拟量以及IGBT的导通压降Vce转换为数字信息，将转换结果发送给微控制器(MCU)，本实施例中MCU为ARM。根据Theatsink和Vce的信息，MCU利用电流检测算法就可对IGBT流过的电流进行估算。
所述FPGA包括故障检测模块、保护逻辑模块、驱动逻辑模块、门极 驱动阵列模块和传输模块；所述故障检测模块配置为完成IGBT模块的故障检测；所述保护逻辑模块配置为对处于故障的所述IGBT模块进行保护；所述驱动逻辑模块配置为驱动IGBT模块；所述门级驱动阵列模块配置为实现IGBT的多段式开通关断；所述传输模块为回报光纤，配置为将所述IGBT模块的导通电流，结温和工作状态反馈至上位机(对应上位控制模块)。该控制系统通过高速光纤与上位机进行通信。
所述ARM包括电压检测模块、温度检测模块和电流检测模块；所述电压检测模块配置为获取IGBT模块的导通压降Vce信息；所述温度检测模块获取IGBT模块散热片的温度信息；所述电流检测模块配置为获取所述温度信息和导通压降Vce信息；计算IGBT模块流过的电流和所述结温并将所述电流和结温传送至所述FPGA。
所述主控制芯片还包括数模转换模块、电压采集模块和温度采集模块，数模转换模块配置为将IGBT模块散热片的温度的模拟量以及IGBT模块的导通压降Vce的模拟量转换为数字量信息，将转换结果发送给所述ARM；所述电压采集模块配置为采集所述IGBT模块的导通压降Vce的模拟量；所述温度采集模块配置为采集所述IGBT模块散热片的温度的模拟量。
图2-图3为3300V/1500A的IGBT特性曲线，以该IGBT为基础介绍数字化驱动的电流检测方法。图2为IGBT导通特性曲线，在IGBT的额定电流附近，Vce(sat)和Ic的关系可以近似的用线性法来表示：
Vce(sat)＝(Vce0+ΔVce/ΔIc)×Ic              (1)
根据IGBT的导通特性曲线可知，IGBT饱和电压的大小与通过的电流Ic，芯片的结温Tj和门极电压Vge有关，通常Vge的驱动电压固定不变。因此可以IGBT饱和电压，芯片的结温Tj反求出导通电流，并将该函数简写表示：
Ic＝FIc(Vcesat，Tj)             (2)
利用IGBT的饱和电压Vce(sat)和导通电流Ic，可以计算出IGBT的导通损耗Pcond：
Pcond＝d×Vce(sat)×Ic＝d×Vce(sat)×FIc(Vcesat，Tj)           (3)
其中d为IGBT的导通占空比。
图3为IGBT开关损耗特性曲线，IGBT的开断损耗与测试条件关系很大，不同的驱动板具有不同的电阻投切方式，投切的开通电阻和关断电阻也各不相同，因此要根据实际驱动板测量不同温度下开关损耗。
根据IGBT开关损耗特性曲线可知，当Vce电压基本不变时，IGBT开通损耗Eon和IGBT关断损耗Eoff可近似地看作与Ic成正比。IGBT的开关损耗与导通电流Ic，芯片的结温Tj和门极电压Vge有关，通常Vge的驱动电压固定不变。芯片的结温Tj越高，IGBT的开关损耗越高；IGBT导通电流越高，IGBT的开关损耗越高。
Eon＝Eon(nom)×Ic/Ic(nom)
Eoff＝Eoff(nom)×Ic/Ic(nom)             (4)
利用IGBT单次开关损耗和开关频率fsw，可以计算出IGBT总的损耗Psw：
Psw＝fsw×(Eon+Eoff)               (5)
假设IGBT的结温为Tj，根据计算得到IGBT导通电流Ic，利用Eon和Eoff与Tj和Ic的关系曲线能够获得IGBT的关断损耗。
Psw＝fsw×(Eon+Eoff)＝fsw×(FEon(Ic,Tj)+FEoff(Ic,Tj))      (6)
因此IGBT工作时的总的损耗计算公式如下：
Ptot＝Pcond+Psw；              (7)
通过高精度温度传感器获取IGBT模块散热片温度信息Theatsink，由于IGBT周期性导通使得散热片的温度轻微波动，一般选择散热片的平均温度。IGBT的结温Tj计算公式如下：
Tj＝ΔTjc+ΔTch+Theatsink＝Ptot(Rth(j-c)IGBT+Rth(c-h)IGBT)+Theatsink
  (8)
ΔTjc为芯片到外壳的温差；
ΔTch为外壳到散热片的温差；
Rth(j-c)IGBT为IGBT芯片到外壳的热阻；
Rth(c-h)IGBT为外壳到散热片的热阻；
假设IGBT的结温为Tj，可以反求出IGBT总的损耗，计算公式如下：
Ptot＝(Tj-Theatsink)/(Rth(j-c)IGBT+Rth(c-h)IGBT)         (9)
图4为反复迭代计算的流程图，该计算由高性能ARM完成，数字驱动板采集到IGBT的散热片温度Theatsink，叠加一个较小ΔT，作为假设的IGBT结温Tj，利用Tj和采集的Vce电压，分别根据公式(3)和(6)计算出IGBT的导通损耗Pcond和开关损耗Psw，两者求和为当前假设结温下的总损耗Ptot1。同时利用结温Tj和IGBT的热阻可反求出IGBT总损耗Ptot2，将Ptot1与Ptot2相比较，如果两者数值差距较大如差距大于差值阈值，可以继续增大ΔT，直到Ptot1和Ptot2的计算结果接近如差距小于差距阈值，此时ΔT为所求的IGBT芯片到散热片的温差，再结合采集的Vce电压，最后利用公式2求得IGBT的导通电流。
最后应当说明的是：以上实施例仅用以说明本发明的技术方案而非对其限制，所属领域的普通技术人员尽管参照上述实施例应当理解：依然可以对本发明的具体实施方式进行修改或者等同替换，这些未脱离本发明精神和范围的任何修改或者等同替换，均在申请待批的本发明的权利要求保护范围之内。

Claims (10)

  1. 一种数字化驱动的绝缘栅双极型晶体管IGBT电流检测系统，包括：主控制模块；所述主控制模块包括可编程逻辑模块和控制模块；
    所述可编程逻辑模块配置为进行IGBT模块的故障检测、故障保护、多段式驱动逻辑及信息回报；
    所述控制模块配置为完成IGBT导通电流和IGBT模块结温的检测，并将导通电流和结温检测的计算结果，通过高速总线传输给所述可编程逻辑模块。
  2. 如权利要求1所述的一种数字化驱动的IGBT电流检测系统，其中：
    所述可编程逻辑模块包括故障检测模块、保护逻辑模块、驱动逻辑模块、门极驱动阵列模块和传输模块；
    所述故障检测模块配置为完成IGBT模块的故障检测；
    所述保护逻辑模块配置为对处于故障的所述IGBT模块进行保护；
    所述驱动逻辑模块配置为驱动所述IGBT模块；
    所述门级驱动阵列模块配置为实现IGBT的多段式开通关断；
    所述传输模块配置为将所述IGBT模块的导通电流、结温和工作状态反馈至上位控制模块。
  3. 如权利要求1所述的一种数字化驱动的IGBT电流检测系统，其中：
    所述控制模块包括电压检测模块、温度检测模块和电流检测模块；
    所述电压检测模块配置为获取所述IGBT模块的导通压降Vce信息；
    所述温度检测模块配置为获取所述IGBT模块散热片的温度信息；
    所述电流检测模块配置为获取所述温度信息和导通压降Vce信息；计算所述IGBT模块流过的电流和所述结温并将所述电流和结温传送至所述可编辑模块。
  4. 如权利要求3所述的一种数字化驱动的IGBT电流检测系统，其中：
    所述主控制模块还包括数模转换模块、电压采集模块和温度采集模块；
    所述数模转换模块配置为将所述IGBT模块散热片的温度的模拟量以及IGBT模块的导通压降Vce的模拟量转换为数字量信息，将转换结果发送给所述控制模块；
    所述电压采集模块配置为采集所述IGBT模块的导通压降Vce的模拟量；
    所述温度采集模块配置为采集所述IGBT模块散热片的温度的模拟量。
  5. 如权利要求1所述的一种数字化驱动的IGBT电流检测系统，其中：所述可编程逻辑模块为现场可编程门阵列FPGA；所述控制模块为微控制器。
  6. 权利要求1-5任意一项所述的一种数字化驱动的IGBT电流检测系统的检测方法，其中：包括：
    获取所述IGBT模块散热片的温度Theatsink模拟量信息；
    获取所述IGBT模块导通压降Vce模拟量信息；
    将所述模拟量信息转换为数字量信息；
    根据导通压降Vce数字量信息和温度Theatsink数字量信息检测所述IGBT模块的导通电流和IGBT模块的结温并将所述导通电流和结温检测的计算结果通过高速总线传输给所述可编辑模块。
  7. 如权利要求6所述的一种数字化驱动的IGBT电流检测方法，其中：所述导通电流和结温检测的计算过程包括：
    将采集到的所述IGBT的散热片温度Theatsink叠加ΔT，作为假设的IGBT结温Tj；
    利用所述Tj和采集的Vce电压，分别计算出IGBT的导通损耗Pcond和开关损耗Psw；
    基于所述导通损耗Pcond和开关损耗Psw的求和确定为当前假设结温下 的总损耗Ptot1；
    利用所述结温Tj和IGBT模块的热阻反求出IGBT总损耗Ptot2；
    将Ptot1与Ptot2相比较，如果两者数值差距超出差距阈值，继续增大ΔT，直到Ptot1和Ptot2的计算结果的差值小于差距阈值；
    将小于差距阈值时对应ΔT确定为IGBT模块芯片到散热片的温差，基于温差结合所述采集的Vce电压，求得IGBT的导通电流。
  8. 如权利要求7所述的一种数字化驱动的IGBT电流检测方法，其中：所述IGBT的导通损耗Pcond和开关损耗Psw为利用所述Tj和采集的Vce电压，并通过下式计算得到：
    Pcond＝d×Vce(sat)×FIc(Vcesat，Tj)；
    其中，d为IGBT模块的导通占空比，Vce(sat)为IGBT的饱和电压，FIc(Vcesat，Tj)为IGBT饱和电压和结温Tj反求出导通电流的函数表示；
    Psw＝fsw×(Eon+Eoff)＝fsw×(FEon(Ic,Tj)+FEoff(Ic,Tj))
    其中，fsw为IGBT开关频率，Eon为IGBT开通损耗，Eoff为IGBT关断损耗，FEon(Ic,Tj)为结温Tj、导通电流Ic与Eon的关系曲线，FEoff(Ic,Tj)为结温Tj、导通电流Ic和Eoff的关系曲线；
    IGBT总的损耗Ptot1为Pcond与Psw之和。
  9. 如权利要求8所述的一种数字化驱动的IGBT电流检测方法，其中：IGBT总的损耗Ptot2为利用IGBT模块散热片温度信息Theatsink和IGBT模块的热阻，通过下式计算得到：
    Ptot2＝(Tj-Theatsink)/(Rth(j-c)IGBT+Rth(c-h)IGBT)；
    Tj为IGBT的结温Tj计算公式如下：
    Tj＝ΔTjc+ΔTch+Theatsink＝Ptot2(Rth(j-c)IGBT+Rth(c-h)IGBT)+Theatsink；
    其中，ΔTjc为芯片到外壳的温差；ΔTch为外壳到散热片的温差；Rth(j-c) IGBT为IGBT芯片到外壳的热阻；Rth(c-h)IGBT为外壳到散热片的热阻。
  10. 如权利要求9所述的一种数字化驱动的IGBT电流检测方法，其中：IGBT的导通电流为通过对比所述IGBT总的损耗Ptot1和IGBT总的损耗Ptot2计算结果，利用下式迭代计算确定：
    Ic＝FIc(Vcesat，Tj)。
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