WO2017071057A1 - 一种激光器与光栅耦合器的封装结构及其方法 - Google Patents

一种激光器与光栅耦合器的封装结构及其方法 Download PDF

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WO2017071057A1
WO2017071057A1 PCT/CN2015/099207 CN2015099207W WO2017071057A1 WO 2017071057 A1 WO2017071057 A1 WO 2017071057A1 CN 2015099207 W CN2015099207 W CN 2015099207W WO 2017071057 A1 WO2017071057 A1 WO 2017071057A1
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lens
laser
grating coupler
mark
reflective prism
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PCT/CN2015/099207
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English (en)
French (fr)
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李世瑜
张玓
胡胜磊
余少华
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武汉电信器件有限公司
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Priority to US15/772,336 priority Critical patent/US20180331486A1/en
Publication of WO2017071057A1 publication Critical patent/WO2017071057A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
    • H01S3/0071—Beam steering, e.g. whereby a mirror outside the cavity is present to change the beam direction
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0071—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for beam steering, e.g. using a mirror outside the cavity to change the beam direction
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/34—Optical coupling means utilising prism or grating
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4296—Coupling light guides with opto-electronic elements coupling with sources of high radiant energy, e.g. high power lasers, high temperature light sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02253—Out-coupling of light using lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02375—Positioning of the laser chips
    • H01S5/0238—Positioning of the laser chips using marks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4206—Optical features
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4207—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms with optical elements reducing the sensitivity to optical feedback
    • G02B6/4208—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms with optical elements reducing the sensitivity to optical feedback using non-reciprocal elements or birefringent plates, i.e. quasi-isolators
    • G02B6/4209—Optical features
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4214—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0064—Anti-reflection components, e.g. optical isolators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding

Definitions

  • the present invention provides a silicon photonic integrated device, and more particularly to a package structure and method for providing a laser and a grating coupler.
  • the silicon-based monolithically integrated optoelectronic chip is a hot spot in the international research.
  • the silicon-based optoelectronic integration technology integrates the optical waveguide/modulator, photodetector, and driver circuit and receiver circuit monolithically, that is, the optical component.
  • the electrical components are integrated on a single chip. All devices are fabricated by standard integrated circuit technology. The advantages are mature production process, low cost and small size, which are suitable for medium and short-range optical communication applications such as data centers.
  • silicon-based materials can make most of optical and electrical devices in fiber-optic communication
  • silicon is an indirect semiconductor material
  • the extreme values of the conduction band and the valence band correspond to different wave vectors, and the probability of radiation recombination is low
  • Two strong non-radiative transition processes Auger recombination and free carrier absorption. Therefore, it is currently impossible to fabricate a laser element.
  • Many studies are now aimed at overcoming this limitation of silicon, such as impurity doping, quantum confinement, silicon-germanium alloys, and the like. However, there is no design that fully satisfies the performance requirements.
  • the relatively simple and feasible way is to use the external hybrid integrated three-five laser to realize the function of the light source. Therefore, how to improve the coupling efficiency and simplify the coupling process is an urgent problem to be solved.
  • the main object of the present invention is to provide a package structure of a laser and a grating coupler and a package method for providing a laser and a grating coupler.
  • the technical solution applied by the present invention is to provide a package structure of a laser and a grating coupler, comprising a laser unit, a collimating lens, an isolator and a reflecting prism disposed on the silicon optical chip, wherein: the silicon light The chip includes a surface of the surface and a first electrode, a first mark, a second mark, a grating coupler and a waveguide layer disposed on the surface of the table; the laser unit includes a transition substrate and a laser, and further includes a top surface of the transition substrate a second electrode; the collimating lens includes first and second lenses, wherein: the first lens is perpendicular to the surface of the surface in the form of an optical path alignment laser, and the second lens is disposed at a surface of the second mark so that the grating is coupled Is located in the central area of the second lens optical path main axis, and the isolator is installed in the middle

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Semiconductor Lasers (AREA)

Abstract

一种激光器（22）与光栅耦合器（15）的封装结构及其方法，其中：激光器（22）与光栅耦合器（15）的封装结构包括设在硅光芯片（10）上的激光器单元（20）、准直透镜（30）、光隔离器（40）及反射棱镜（50）；硅光芯片（10）包括表平面（11）上设有的第一电极（12）、第一标记（13）和第二标记（14）、光栅耦合器（15）以及波导层（16）；激光器单元（20）包括过渡基板（21）和激光器（22）；准直透镜（30）包括第一透镜（31）、第二透镜（32），第一透镜（31）垂立于表平面（11），第二透镜（32）对位第二标记（14）设于表平面（11），使得光栅耦合器（15）位于第二透镜（32）光路主轴的中心区域，以及光隔离器（40）安装在介于第一透镜（31）、第二透镜（32）之间表平面（11），使得激光器（22）输出的发散光经过第一透镜（31）准直后，透过光隔离器（40）入射到反射棱镜（50）上，经过反射棱镜（50）的角度偏转后由第二透镜（32）汇聚，汇聚点位于光栅耦合器（15）表面，藉由前述构造，解决了精确对位封装的技术问题，达成了方便制成，提升产品良率的效果。

Description

一种激光器与光栅耦合器的封装结构及其方法 技术领域
本发明提供一种硅光子集成器件，尤其是指提供一种激光器与光栅耦合器的封装结构及其方法。
背景技术
基于硅基的单片集成的光电芯片，是目前国际上研究的热点，硅基光电子集成技术是将光波导/调制器、光电探测器及驱动电路和接收器电路进行单片集成，即将光学元件和电学元件集成在一个芯片上，所有器件均采用标准集成电路工艺制备，其优点在于制作工艺成熟、成本低、体积小，适合于数据中心等中短距离光通信的应用。
虽然硅基材料可以制作光纤通信中的大部分光器件和电器件，但由于硅是间接半导体材料，其导带和价带的极值对应于不同的波矢，辐射复合几率很低，而且存在两个强非辐射跃迁过程：俄歇复合和自由载流子吸收。因此，目前无法制作成激光器元件。现在很多研究旨在克服硅的这种限制，例如，杂质掺杂、量子限制、硅-锗合金等。但还未出现完全满足性能要求的设计，故在硅基的单片集成光电芯片中，目前比较简单可行的方式，是采用外部混合集成三五族激光器的方式来实现光源的功能。因此，如何提高耦合效率，简化耦合工艺是一个亟待解决的问题。
技术问题
为解决上述技术问题，本发明的主要目的在于提供一种激光器与光栅耦合器的封装结构及提供一种激光器与光栅耦合器的封装方法。
技术解决方案
为达成上述目的，本发明应用的技术方案是：提供一种激光器与光栅耦合器的封装结构，包括设在硅光芯片上的激光器单元、准直透镜、隔离器及反射棱镜，其中：硅光芯片包括表平面及其依序在表平面上设有的第一电极、第一标记、第二标记、光栅耦合器以及波导层；激光器单元包括过渡基板和激光器，还包括暴露在过渡基板顶表面上的第二电极；准直透镜包括第一、第二透镜，其中：第一透镜以光路对准激光器形式垂立于表平面，第二透镜对位第二标记设于表平面，使得光栅耦合器位于第二透镜光路主轴的中心区域，以及隔离器安装在介于第

Claims (1)

  1. 一、第二透镜之间表平面，使得激光器输出的发散光经过第一透镜准直后，透过隔离器入射到反射棱镜上，经过反射棱镜的角度偏转后由第二透镜汇聚，汇聚点位于光栅耦合器表面。
    在本实施例中优选，顶表面还设有焊料部，焊料部靠近顶表面右侧边设置，且与第二电极电性相连，靠近焊料部的顶表面还设有第三标记。
    在本实施例中优选，过渡基板对位第一标记安装在表平面上，激光器在对位第三标记时通过焊料部固定在顶表面上。
    在本实施例中优选，过渡基板采用硅、氮化铝和/或氧化铝材料成型。
    为达成上述目的，本发明应用的技术方案是：提供一种激光器与光栅耦合器的封装方法，包括：
    先在过渡基板上制作有第二电极、焊料部以及第三标记，激光器与第三标记精确对位后，通过焊料部贴装在过渡基板上，激光器顶层具有顶层电极，顶层电极通过金丝线连接第二电极；
    再在硅光芯片的表平面制作用于与过渡基板进行对位的第一标记以及用于贴装第二透镜时做到精确对位的第二标记，第二透镜直接贴装在硅光芯片上，使之焦平面与硅光芯片接触，以及
    在第二标记的辅位作用下，使得第二透镜对位贴装时，光栅耦合器位于第二透镜的光路主轴的中心区域。
    在本实施例中优选，第一透镜在硅光芯片上为可作移位调节结构，并以此能将激光器输出光变换为平行光，第一透镜和硅光芯片之间填充有紫外胶或热固胶固化。
    在本实施例中优选，光隔离器设在第一透镜和反射棱镜之间，反射棱镜固定于表平面，其倾斜反射端面位于第二透镜正上方，反射棱镜将平行光束通过第二透镜耦合进光栅耦合器，通过微调位置来找到耦合效率最大点，然后，采用紫外胶或热固胶进行固化。
    在本实施例中优选，通过调解第二透镜以及对反射棱镜的角度设置变化，使光栅耦合器得到最佳的耦合效率，其中：反射棱镜入射到光栅耦合器的光束角度在30°至60°之间。
    在本实施例中优选，过渡基板通过第一标记对位后贴装并填充紫外胶或热固胶进
PCT/CN2015/099207 2015-10-30 2015-12-28 一种激光器与光栅耦合器的封装结构及其方法 WO2017071057A1 (zh)

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