WO2017063330A1 - 一种光谱仪集成芯片及制作方法 - Google Patents

一种光谱仪集成芯片及制作方法 Download PDF

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WO2017063330A1
WO2017063330A1 PCT/CN2016/075934 CN2016075934W WO2017063330A1 WO 2017063330 A1 WO2017063330 A1 WO 2017063330A1 CN 2016075934 W CN2016075934 W CN 2016075934W WO 2017063330 A1 WO2017063330 A1 WO 2017063330A1
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array
integrated chip
substrate
photodetector
waveguide
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French (fr)
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吕苗
吕金科
邓盛锋
冯兴兴
田中群
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Xiamen University
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Xiamen University
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/02—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum

Definitions

  • the invention relates to the field of micro-instrument technology, and more particularly to a spectrometer chip integrated with an arrayed waveguide grating and a photodetector and a manufacturing method thereof.
  • the spectrometer is capable of measuring the spectral composition of the input light and is a necessary measuring instrument for the production of various illumination sources; it is also an essential component in spectral analysis techniques such as absorption spectroscopy, fluorescence spectroscopy and Raman spectroscopy, in food safety, medical care, and environmental testing. Other fields have broad application prospects.
  • Spectrometers have many commercial products, mainly composed of lenses, gratings and CCD/CMOS photodetectors. However, these products require expensive optical components and precise optical assembly. In the application, there are disadvantages such as high price and large weight.
  • the object of the present invention is to overcome the deficiencies of the prior art, and to provide a spectrometer chip integrated with an arrayed waveguide grating and a photodetector which is small in size, low in cost, and mass-produced, and a manufacturing method thereof.
  • a spectrometer integrated chip comprising: a substrate and an arrayed waveguide grating processed on the substrate, a photodetector array, a micro mirror array; an output waveguide array of the arrayed waveguide grating; and a micro mirror array and a photodetector array are arranged in one-to-one correspondence;
  • the optical signal enters the arrayed waveguide grating from the input waveguide of the arrayed waveguide grating, and light having a specific wavelength in the optical signal is output from a specific output waveguide corresponding to the specific wavelength in the output waveguide array, and is refracted and transmitted to the photodetector through the micro mirror array.
  • the corresponding photodetector in the array is converted into an electrical signal output.
  • said arrayed waveguide grating is separated from each other by light of different wavelengths output by each output waveguide, depending on the spectral composition of the optical signal.
  • the arrayed waveguide grating comprises an optical waveguide lower cladding layer, an optical waveguide core layer, and an optical waveguide upper cladding layer.
  • the output waveguide of the arrayed waveguide grating is provided with a detection window of the photodetector, and an impurity layer opposite to the polarity of the substrate is injected into the detection window, and an anti-reflection layer is disposed on the surface of the detection window, and the anti-reflection layer is disposed on the surface of the detection window.
  • An electrical contact window is disposed on the outer periphery, the impurity layer extends to the electrical contact window, the upper electrode in electrical contact with the impurity layer is disposed in the electrical contact window, and the lower electrode is disposed on the bottom surface of the substrate.
  • the photodetectors each have a photosensitive surface, and light having a specific wavelength in the optical signal is respectively outputted from a specific output waveguide corresponding to a specific wavelength in the output waveguide array, and is refracted and transmitted to the photodetector through the micro mirror array.
  • the photosensitive surface of the corresponding photodetector in the array is converted into an electrical signal output.
  • a spectrometer integrated chip manufacturing method comprising: fabricating an arrayed waveguide grating, a photodetector array, and a micromirror array.
  • fabricating the arrayed waveguide grating comprises: forming a silicon dioxide layer as an under cladding of the optical waveguide by oxidation and chemical vapor deposition; forming a silicon oxynitride layer as a core layer of the optical waveguide by plasma enhanced chemical vapor deposition; under a nitrogen atmosphere Annealing is performed; the shape of the arrayed waveguide grating is formed on the optical waveguide core layer by photolithography and inductively coupled plasma etching; and the TEOS silicon oxide layer is formed by low pressure chemical vapor deposition as the cladding of the optical waveguide.
  • fabricating the photodetector array comprises: forming an electrical contact window on the substrate by photolithography and wet etching, forming an upper electrode of the photodetector by photolithography, evaporating metal aluminum and wet etching; evaporating metal on the back side of the substrate Aluminum forms a common lower electrode.
  • the micromirror array comprises: covering the processing mold of the micromirror with the connection position of the output waveguide and the photosensor of the photodetector, and then performing micromirror processing.
  • the processing mold of the micromirror is provided with a molding profile and an injection channel, and the processing die is aligned and bonded on the substrate, and the molding profile covers the end of the output waveguide and the photosensitive surface.
  • the ultraviolet curing optical resin is injected and solidified through the injection channel; after the processing die is uncovered, the surface of the substrate is spin-coated with photoresist, the photoresist on the surface of the micromirror is removed, and the sputtering is performed.
  • the metal shot and strip process forms a reflective layer on the surface of the micromirror.
  • the substrate is a single crystal silicon wafer.
  • the present invention replaces the prior art reflection/transmission grating and CCD/CMOS photodetector with an arrayed waveguide grating and photodetector array fabricated on the same substrate, and realizes the arrayed waveguide grating by using a microlens array integrated on the same substrate.
  • the invention can realize the splitting and convert the optical signal into an electric signal, thereby realizing the chip formation of the spectrometer, and adopting the micro processing technology to realize the mass production, greatly reducing the volume and cost of the spectrometer, and even integrating into a portable device such as a smart phone. Realize new functions such as chemical composition analysis.
  • Figure 1 is a schematic view of the structure of the present invention
  • FIG. 2 is a partially enlarged schematic view showing an output waveguide, a micro mirror array, and a photodetector of an arrayed waveguide grating;
  • FIG. 3 is a schematic cross-sectional view of an output waveguide, a micro mirror array, and a photodetector of an arrayed waveguide grating;
  • 10 is a substrate
  • 20 is an arrayed waveguide grating
  • 30 is a photodetector
  • 40 is a micromirror
  • 50 is an input waveguide
  • 60 is an output waveguide
  • 70 is a photosensitive surface
  • 80 is an optical waveguide lower cladding
  • 90 is The detection window
  • 100 is an impurity layer
  • 110 is an anti-reflection layer
  • 120 is an optical waveguide core layer
  • 130 is an optical waveguide cladding layer
  • 140 is an electrical contact window
  • 150 is an upper electrode
  • 160 is a lower electrode.
  • a spectrometer integrated chip comprising a substrate 10, an arrayed waveguide grating 20, an array of photodetectors 30, an array of micromirrors 40, an arrayed waveguide grating 20, and a photodetector
  • the array of 30 arrays and micromirrors 40 is processed on the substrate 10.
  • the arrayed waveguide grating 20 includes an input waveguide 50, an array of output waveguides 60, an array of output waveguides 60, and an array of micromirrors 40 are arranged in one-to-one correspondence with the array of photodetectors 30.
  • the optical assembly can convert the light of the output waveguide 60 into an electrical signal.
  • Arrayed waveguide grating 20 is used to split the input light entering through input waveguide 50 such that light of different specific wavelengths enters different output waveguides 60 of the array of output waveguides 60 for different specific output waveguides 60 to output different specific wavelengths.
  • the optical signal enters the arrayed waveguide grating 20 from the input waveguide 50.
  • Light having a specific wavelength in the optical signal is output from a specific output waveguide 60 corresponding to a specific wavelength in the array of output waveguides 60, and is refracted through the array of micromirrors 40 to photodetection.
  • the intensity of the output signals of the respective photodetector 30 units in the array 30 of photodetectors 30 sequentially represents the intensity of the optical signals of the respective wavelengths of the input light, thereby realizing the function of the spectrometer.
  • the detection window 90 of the photodetector 30 is opened at the end of the output waveguide 60 of the arrayed waveguide grating 20, and an impurity layer 100 having a polarity opposite to that of the substrate 10 is injected into the detection window 90, and is disposed on the surface of the detection window 90.
  • the anti-reflection layer 110 is provided with an electrical contact window 140 on the outer periphery of the anti-reflection layer 110.
  • the impurity layer 100 extends to the electrical contact window 140, and the upper electrode 150 is formed in the electrical contact window 140 to make electrical contact with the impurity layer 100.
  • the photosurface 70 is detected.
  • the lower electrode 160 is provided on the bottom surface of the substrate 10 in the window 90 covered by the anti-reflection layer 110 and not covered by the upper electrode.
  • each output waveguide 60 light of different wavelengths outputted by each output waveguide 60 is separated from each other according to the spectral composition of the optical signal.
  • the substrate 10 can be selected from a single crystal silicon wafer or other semiconductor substrate material.
  • the substrate 10 is selected from an N-type epitaxial single crystal silicon wafer, the epitaxial layer has a thickness greater than 10 micrometers, and the epitaxial layer has a doping concentration of less than 5 ⁇ 10 14 cm ⁇ 3 , and the arrayed waveguide grating 20 and the photodetector 30 array are The array of micromirrors 40 are all fabricated on the substrate 10 using microfabrication techniques.
  • optical waveguide lower cladding layer 80, the optical waveguide core layer 120, and the optical waveguide upper cladding layer 130 are processed on the substrate 10, and the arrayed waveguide grating 20 is formed on the planar structure, as shown in FIG.
  • the processing sequence is: optical waveguide lower cladding 80, photodetector 30, optical waveguide core layer 120, optical waveguide upper cladding layer 130, metal upper electrode 150, metal lower electrode 160, and micromirror 40.
  • the detection window 90 of the photodetector 30 is opened at the end of the output waveguide 60 of the arrayed waveguide grating 20, and the impurity layer 100 opposite to the polarity of the substrate 10 is injected into the substrate 10 in the detection window 90, and an anti-reflection layer is disposed on the surface of the detection window 90. 110.
  • An electrical contact window 140 is disposed on the outer periphery of the anti-reflection layer 110.
  • the impurity layer 100 extends to the electrical contact window 140, the upper electrode in electrical contact with the impurity layer 100 is disposed in the electrical contact window 140, and the lower electrode is disposed on the bottom surface of the substrate 10.
  • the detection window 90 of the photodetector 30 is formed by photolithography and wet etching, and a 500 nm thick P-type impurity layer 100 is formed at the window by ion implantation or boron diffusion process;
  • the wavelength range of the signal forms a silicon dioxide layer of a specific thickness as the anti-reflection layer 110.
  • the thickness of the anti-reflection layer 110 is 105 nm.
  • a 1.5 ⁇ m thick silicon oxynitride layer was formed as an optical waveguide core layer 120 by plasma enhanced chemical vapor deposition; an annealing at 800 ° C for 1 hour in a nitrogen atmosphere; and an optical waveguide core by photolithography and inductively coupled plasma etching processes
  • the shape of the arrayed waveguide grating 20 is formed on the layer 120; a 2-micron thick TEOS silicon oxide layer is formed as an optical waveguide upper cladding layer 130 by low pressure chemical vapor deposition.
  • an electrical contact window 140 of the P-type impurity layer 100 of the photodetector 30 array by photolithography and wet etching Forming an electrical contact window 140 of the P-type impurity layer 100 of the photodetector 30 array by photolithography and wet etching, forming an upper electrode 150 of the photodetector 30 by photolithography, evaporating 1 micron thick metal aluminum and wet etching; A 1 m thick metal aluminum is evaporated on the back surface of the silicon substrate 10 to form a common lower electrode 160.
  • the processing die of the micromirror 40 is overlaid on the connection position of the output waveguide 60 and the photosensitive surface 70 of the photodetector 30, and then processed by the micromirror 40.
  • the processing die of the micromirror 40 is provided with a molding profile and an injection channel, and the processing die is aligned and bonded to the substrate 10, and the molding profile covers the end of the output waveguide 60 and the photosensitive surface 70.
  • the ultraviolet curable optical resin is injected and cured through the injection channel; after the processing die is uncovered, the surface of the substrate 10 is spin-coated with photoresist, the photoresist on the surface of the micromirror 40 is removed, and the coating is passed through the coating.
  • the process forms a reflective layer on the surface of the micromirror 40.
  • a processing mold for fabricating the micromirror 40 is formed on another single crystal silicon substrate.
  • a photoresist pattern of a profile formed by the micromirror 40 is formed by a laser photolithography process, and a micrograph connecting the respective patterns is connected.
  • Channel injection channel
  • the cross section of the photoresist is a paraboloid.
  • the PDMS precursor is covered on the substrate, and after the PDMS is cured, the processing die having a parabolic shape and a microchannel is formed.
  • the processing mold is aligned and bonded to the substrate 10 such that the paraboloid covers the end of the output waveguide 60 and the photosensitive surface 70 of the photodetector 30; the ultraviolet-cured optical resin is injected through the microchannel and cured; and the processing die is uncovered.
  • the surface of the substrate is protected by spin coating, the photoresist at the paraboloid is removed by a photolithography process, 100 nm thick silver is sputtered to form a reflective layer, and the metal reflective layer sputtered elsewhere is removed by a lift-off process, only in the micro
  • the surface of the mirror 40 retains a silver reflective layer.
  • the invention relates to a spectrometer integrated chip and a manufacturing method thereof, and an array waveguide grating, a micro mirror array and a photodetector array are integrated on a substrate.
  • the invention integrates the original grating, the lens and the monolith.
  • the function of CCD is small in volume and weight. It can be mass-produced by microelectronics manufacturing technology, with low cost and good industrial applicability.

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectrometry And Color Measurement (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

一种光谱仪集成芯片及制作方法。光谱仪集成芯片包括：基板（10）、阵列波导光栅（20）、微反射镜（40）阵列、光电探测器（30）阵列。所述光电探测器（30）阵列、阵列波导光栅（20）和微反射镜（40）阵列都通过微细加工技术依次制作在基板（10）上。输入光信号进入阵列波导光栅（20），并从阵列波导光栅（20）的输出波导（60）中输出，经与阵列波导光栅（20）一一对应的微反射镜（40）阵列传导到光电探测器（30）阵列上转化为电信号。该光谱仪集成芯片集成了原有的光栅、透镜和CCD的功能，体积、重量小，可用微电子制造技术批量生产，成本低。

Description

一种光谱仪集成芯片及制作方法 技术领域
本发明涉及微型仪器技术领域，更具体地说，涉及一种集成了阵列波导光栅和光电探测器的光谱仪芯片及制作方法。
背景技术
光谱仪能够测定输入光的光谱成分，是各种照明光源生产中必需的测量仪器；并且是吸收光谱、荧光光谱和拉曼光谱等光谱分析技术中必需的组件，在食品安全、医疗卫生、环境检测等领域具有广阔的应用前景。
光谱仪已有很多商用产品，主要由透镜、光栅和CCD/CMOS光电探测器组成，但这些产品需要昂贵的光学元件和精密的光学装配，在应用中存在着价格高、体积重量大等缺点。
发明内容
本发明的目的在于克服现有技术的不足，提供一种体积小、成本低和可以批量生产的集成了阵列波导光栅和光电探测器的光谱仪芯片及制作方法。
本发明的技术方案如下：
一种光谱仪集成芯片，包括基板和加工在基板上的阵列波导光栅、光电探测器阵列、微反射镜阵列；阵列波导光栅的输出波导阵列、微反射镜阵列与光电探测器阵列一一对应设置；光信号从阵列波导光栅的输入波导进入阵列波导光栅，光信号中具有特定波长的光从输出波导阵列中的与该特定波长对应的特定输出波导输出，经微反射镜阵列折射传导至光电探测器阵列中对应的光电探测器上，转换为电信号输出。
作为优选，所述阵列波导光栅根据光信号的光谱组成，每个输出波导输出的不同波长的光彼此分隔。
作为优选，所述阵列波导光栅包括光波导下包层、光波导芯层、光波导上包层。
作为优选，所述阵列波导光栅的输出波导的末端开设有光电探测器的探测窗口，在探测窗口内注入有与基板极性相反的杂质层，在探测窗口表面设置防反射层，在防反射层外周设置电接触窗口，杂质层延伸至电接触窗口，在电接触窗口设置与杂质层形成电接触的上电极，在基板的底面设置下电极。
作为优选，所述光电探测器均具有一光敏面，光信号中具有特定波长的光分别从输出波导阵列中的与特定波长对应的特定输出波导输出，经微反射镜阵列折射传导至光电探测器阵列中对应的光电探测器的光敏面上，转换为电信号输出。
一种光谱仪集成芯片制作方法，其步骤包括：制作阵列波导光栅、光电探测器阵列、微反射镜阵列。
作为优选，制作阵列波导光栅包括：采用氧化和化学气相沉积制作二氧化硅层作为光波导下包层；采用等离子体增强的化学气相沉积制作氮氧化硅层作为光波导芯层；在氮气气氛下进行退火；采用光刻和电感耦合等离子体刻蚀工艺在光波导芯层上形成阵列波导光栅的形状；采用低压化学气相沉积制作TEOS氧化硅层作为光波导上包层。
作为优选，制作光电探测器阵列包括：在基板上通过光刻和湿法腐蚀形成电接触窗口，通过光刻、蒸发金属铝和湿法腐蚀形成光电探测器的上电极；在基板的背面蒸发金属铝形成共同的下电极。
作为优选，微反射镜阵列包括：将微反射镜的加工模具覆盖于输出波导与光电探测器的光敏面的连接位置，然后进行微反射镜加工。
作为优选，微反射镜的加工模具设置有成型轮廓与注入通道，将加工模具对准键合在基板上，成型轮廓覆盖输出波导的未端与光敏面。
作为优选，加工微反射镜时，通过注入通道将紫外固化的光学树脂注入并固化；揭开加工模具后，基板的表面旋涂光刻胶，去除微反射镜表面的光刻胶，并通过溅射金属和剥离工艺在微反射镜表面形成反射层。
作为优选，所述基板选用单晶硅片。
本发明的有益效果如下：
本发明用制作在同一基板上的阵列波导光栅和光电探测器阵列取代了现有技术中的反射/透射光栅和CCD/CMOS光电探测器，用集成在同一基板上的微透镜阵列实现阵列波导光栅和光电探测器阵列的光学对准。本发明能够实现分光并把光信号转化为电信号，从而实现了光谱仪的芯片化，并可采用微细加工技术实现批量制造，大大降低光谱仪的体积和成本，甚至可以集成在智能手机等便携设备中实现化学成分分析等新功能。
附图说明
图1是本发明的结构示意图；
图2是阵列波导光栅的输出波导、微反射镜阵列和光电探测器的局部放大示意图；
图3是阵列波导光栅的输出波导、微反射镜阵列和光电探测器的剖面示意图；
图中：10是基板，20是阵列波导光栅，30是光电探测器，40是微反射镜，50是输入波导，60是输出波导，70是光敏面，80是光波导下包层，90是探测窗口，100是杂质层，110是防反射层，120是光波导芯层，130是光波导上包层，140是电接触窗口，150是上电极，160是下电极。
具体实施方式
以下结合附图及实施例对本发明进行进一步的详细说明。
实施例，如图1、图2、图3所示，一种光谱仪集成芯片，包括基板10、阵列波导光栅20、光电探测器30阵列、微反射镜40阵列，阵列波导光栅20、光电探测器30阵列、微反射镜40阵列加工在基板10上，阵列波导光栅20包括输入波导50、输出波导60阵列，输出波导60阵列、微反射镜40阵列与光电探测器30阵列一一对应设置，无需光学装配即可以将输出波导60的光转换成电信号。
阵列波导光栅20用于对通过输入波导50进入的输入光进行分光，以使不同特定波长的光进入输出波导60阵列的不同输出波导60中，用于使不同特定输出波导60输出不同特定波长的光。光信号从输入波导50进入阵列波导光栅20，光信号中具有特定波长的光分别从输出波导60阵列中的与特定波长对应的特定输出波导60输出，经微反射镜40阵列折射传导至光电探测器30阵列中对应的光电探测器30的光敏面70上，如图2所示，转换为电信号输出，实现光谱仪的功能。因此，光电探测器30阵列30中各个光电探测器30单元的输出信号的强弱依次代表了输入光各个波长光信号的强弱，从而实现了光谱仪的功能。
在基板10上，阵列波导光栅20的输出波导60的末端开设有光电探测器30的探测窗口90，在探测窗口90内注入有与基板10极性相反的杂质层100，在探测窗口90表面设置防反射层110，在防反射层110外周设置电接触窗口140，杂质层100延伸至电接触窗口140，在电接触窗口140设置与杂质层100形成电接触的上电极150，光敏面70是探测窗口90内被防反射层110所覆盖，而未被上电极覆盖的表面，在基板10的底面设置下电极160。
本发明所述的芯片，根据光信号的光谱组成，每个输出波导60输出的不同波长的光彼此分隔。
一种光谱仪集成芯片制作方法：其基板10可选用单晶硅片或其他半导体衬底材料。本实施例中，基板10选用N型外延单晶硅片，外延层厚度大于10微米，外延层掺杂浓度小于5×1014 cm-3，所述阵列波导光栅20、光电探测器30阵列、微反射镜40阵列均采用微细加工技术制作集成在基板10上。基板10上加工有光波导下包层80、光波导芯层120、光波导上包层130，在平面结构上形成阵列波导光栅20，如图3所示。加工顺序依次为：光波导下包层80、光电探测器30、光波导芯层120、光波导上包层130、金属上电极150、金属下电极160、微反射镜40。
阵列波导光栅20的输出波导60的末端开设有光电探测器30的探测窗口90，在探测窗口90往基板10内注入与基板10极性相反的杂质层100，在探测窗口90表面设置防反射层110，在防反射层110外周设置电接触窗口140，杂质层100延伸至电接触窗口140，在电接触窗口140设置与杂质层100形成电接触的上电极，在基板10的底面设置下电极。
本实施例中，通过光刻和湿法腐蚀形成光电探测器30的探测窗口90，在窗口处通过离子注入或硼扩散工艺形成500纳米厚的P型杂质层100；在探测窗口90处按照光信号的波长范围形成特定厚度的二氧化硅层作为防反射层110，在本实施例中，防反射层110的厚度为105纳米。
通过等离子体增强的化学气相沉积制作1.5微米厚的氮氧化硅层作为光波导芯层120；在氮气气氛下800°C退火1小时；通过光刻和电感耦合等离子体刻蚀工艺在光波导芯层120上形成阵列波导光栅20的形状；通过低压化学气相沉积制作2微米厚的TEOS氧化硅层作为光波导上包层130。
通过光刻和湿法腐蚀形成光电探测器30阵列的P型杂质层100的电接触窗口140，通过光刻、蒸发1微米厚的金属铝和湿法腐蚀形成光电探测器30的上电极150；在硅基板10的背面蒸发1微米厚的金属铝形成共同的下电极160。
将微反射镜40的加工模具覆盖于输出波导60与光电探测器30的光敏面70的连接位置，然后进行微反射镜40加工。微反射镜40的加工模具设置有成型轮廓与注入通道，将加工模具对准键合在基板10上，成型轮廓覆盖输出波导60的未端与光敏面70。加工微反射镜40时，通过注入通道将紫外固化的光学树脂注入并固化；揭开加工模具后，基板10的表面旋涂光刻胶，去除微反射镜40表面的光刻胶，并通过镀膜工艺在微反射镜40表面形成反射层。
本实施例中，在另一片单晶硅基板上制作微反射镜40的加工模具，首先通过激光光刻工艺形成微反射镜40所需的成型轮廓的光刻胶图形，及连接各个图形的微通道（注入通道）。在本实施例中，光刻胶的截面为抛物面。在此基板上覆盖PDMS前聚体，PDMS固化后揭开后形成具有抛物面形状和微通道的加工模具。
将加工模具对准键合到基板10上，使抛物面覆盖了输出波导60的末端和光电探测器30的光敏面70；通过微通道注入紫外固化的光学树脂并固化；揭开加工模具。通过旋涂光刻胶保护基板的表面，通过光刻工艺去除抛物面处的光刻胶，溅射100纳米厚的银形成反射层，通过剥离工艺去除其他地方溅射的金属反射层，仅在微反射镜40的表面保留银反射层。
上述实施例仅是用来说明本发明，而并非用作对本发明的限定。只要是依据本发明的技术实质，对上述实施例进行变化、变型等都将落在本发明的权利要求的范围内。
工业实用性
本发明一种光谱仪集成芯片及制作方法，在基板上集成了阵列波导光栅、微反射镜阵列、光电探测器阵列，与传统的光谱仪相比，本发明单片集成了原有的光栅、透镜和CCD的功能，体积、重量小，可用微电子制造技术批量生产，成本低，具有良好的工业实用性。

Claims (12)

  1. 一种光谱仪集成芯片，其特征在于，包括基板和加工在基板上的阵列波导光栅、光电探测器阵列、微反射镜阵列；阵列波导光栅的输出波导阵列、微反射镜阵列与光电探测器阵列一一对应设置；光信号从阵列波导光栅的输入波导进入阵列波导光栅，光信号中具有特定波长的光分别从输出波导阵列中的与特定波长对应的特定输出波导输出，经微反射镜阵列折射传导至光电探测器阵列中对应的光电探测器上，转换为电信号输出。
  2. 根据权利要求1所述的光谱仪集成芯片，其特征在于，所述阵列波导光栅根据光信号的光谱组成，每个输出波导输出的不同波长的光彼此分隔。
  3. 根据权利要求1所述的光谱仪集成芯片，其特征在于，所述阵列波导光栅包括光波导下包层、光波导芯层、光波导上包层。
  4. 根据权利要求3所述的光谱仪集成芯片，其特征在于，所述阵列波导光栅的输出波导的末端开设有光电探测器的探测窗口，在探测窗口内注入有与基板极性相反的杂质层，在探测窗口表面设置防反射层，在防反射层外周设置电接触窗口，杂质层延伸至电接触窗口，在电接触窗口设置与杂质层形成电接触的上电极，在基板的底面设置下电极。
  5. 根据权利要求4所述的光谱仪集成芯片，其特征在于，所述光电探测器均具有一光敏面，光信号中具有特定波长的光分别从输出波导阵列中的与特定波长对应的特定输出波导输出，经微反射镜阵列折射传导至光电探测器阵列中对应的光电探测器的光敏面上，转换为电信号输出。
  6. 一种如权利要求所述1或2或3或4或5的光谱仪集成芯片制作方法，其特征在于， 其步骤包括：制作阵列波导光栅、光电探测器阵列、微反射镜阵列。
  7. 根据权利要求6所述的光谱仪集成芯片制作方法，其特征在于，制作阵列波导光栅包括：采用氧化和化学气相沉积制作二氧化硅层作为光波导下包层；采用等离子体增强的化学气相沉积制作氮氧化硅层作为光波导芯层；在氮气气氛下进行退火；采用光刻和电感耦合等离子体刻蚀工艺在光波导芯层上形成阵列波导光栅的形状；采用低压化学气相沉积制作TEOS氧化硅层作为光波导上包层。
  8. 根据权利要求6或7所述的光谱仪集成芯片制作方法，其特征在于，制作光电探测器阵列包括：在基板上通过光刻和湿法腐蚀形成电接触窗口，通过光刻、蒸发金属铝和湿法腐蚀形成光电探测器的上电极；在基板的背面蒸发金属铝形成共同的下电极。
  9. 根据权利要求1所述的光谱仪集成芯片制作方法，其特征在于，微反射镜阵列包括：将微反射镜的加工模具覆盖于输出波导与光电探测器的光敏面的连接位置，然后进行微反射镜加工。
  10. 根据权利要求9所述的光谱仪集成芯片制作方法，其特征在于，微反射镜的加工模具设置有成型轮廓与注入通道，将加工模具对准键合在基板上，成型轮廓覆盖输出波导的未端与光敏面。
  11. 根据权利要求9所述的光谱仪集成芯片制作方法，其特征在于，加工微反射镜时，通过注入通道将紫外固化的光学树脂注入并固化；揭开加工模具后，基板的表面旋涂光刻胶，去除微反射镜表面的光刻胶，并通过溅射金属和剥离工艺在微反射镜表面形成反射层。
  12. 根据权利要求6所述的光谱仪集成芯片制作方法，其特征在于，所述基板选用单晶硅片。
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