WO2017049685A1 - 一种 oled 发光器件及显示装置 - Google Patents

一种 oled 发光器件及显示装置 Download PDF

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WO2017049685A1
WO2017049685A1 PCT/CN2015/092308 CN2015092308W WO2017049685A1 WO 2017049685 A1 WO2017049685 A1 WO 2017049685A1 CN 2015092308 W CN2015092308 W CN 2015092308W WO 2017049685 A1 WO2017049685 A1 WO 2017049685A1
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Prior art keywords
material layer
layer
substrate
light
refractive index
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French (fr)
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徐超
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to EA201890792A priority Critical patent/EA035106B1/ru
Priority to US14/890,589 priority patent/US9722210B2/en
Priority to JP2018533989A priority patent/JP6650522B2/ja
Priority to GB1805242.3A priority patent/GB2558109B/en
Priority to KR1020187009090A priority patent/KR102033162B1/ko
Publication of WO2017049685A1 publication Critical patent/WO2017049685A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/813—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80515—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/80—Composition varying spatially, e.g. having a spatial gradient
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/211—Changing the shape of the active layer in the devices, e.g. patterning by selective transformation of an existing layer

Definitions

  • the present invention relates to the field of display manufacturing, and in particular to an OLED light emitting device and a display device.
  • OLED Organic Light-Emitting, Organic Light-Emitting Diode
  • advantages such as self-illumination, wide viewing angle, fast response, high contrast, low energy consumption, environmental protection, long life, ultra-thin and flexible display, etc. It is widely recognized as the focus of next-generation display technology.
  • a typical OLED light emitting device is composed of a glass substrate 10 and ITO (indium tin).
  • organic light-emitting layer 30 is composed of a cathode 40 (Cathode) or the like, wherein the ITO anode 20 and the metal cathode 40 sandwich the organic light-emitting layer 30 as a sandwich, and a voltage is injected into the hole of the anode 20 and the cathode 40.
  • the organic light-emitting layer 30 is bonded, the electrons excite the organic material to generate the light A1.
  • An object of the present invention is to provide an OLED light emitting device and a display device to solve the problems of low light output and insufficient brightness of the existing OLED light emitting device.
  • the present invention provides an OLED light emitting device including a cathode, a light emitting layer, an anode, a substrate, and a light extraction layer, the light emitting layer being located between the cathode and the anode, the substrate being located at the Between the anode and the light extraction layer; the top surface and the bottom surface of the light extraction layer are both planar, comprising at least a first material layer and a second material layer; the first material layer is located on the substrate, the second a material layer is located on the first material layer, the first material layer and the second material layer respectively having a first contact surface and a second contact surface in contact with each other, the longitudinal of the first contact surface and the second contact surface
  • the cross-sections are in a regular zigzag shape nested with each other; the refractive index n A of the first material layer, the refractive index n of the substrate, and the refractive index n B of the second material layer satisfy the condition: n A > n
  • the serration is composed of a plurality of identical isosceles triangles, and a bottom edge of the isosceles triangle of the first material layer coincides with a surface of the substrate;
  • the light extraction layer further comprises a layer of a third material, the third material layer is disposed on the second material layer, the refractive index of the second material layer ⁇ n c the refractive index of the third material layer n B .
  • a base angle size of the isosceles triangle of the first material layer is calculated according to a refractive index of the first material layer.
  • the present invention also provides an OLED light-emitting device comprising a cathode, a light-emitting layer, an anode, a substrate, and a light extraction layer, the light-emitting layer being located between the cathode and the anode, the substrate being located at the anode and the light extraction layer
  • the top surface and the bottom surface of the light extraction layer are both planar, and include at least a first material layer and a second material layer; the first material layer is located on the substrate, and the second material layer is located at the On the first material layer, the first material layer and the second material layer respectively have a first contact surface and a second contact surface that are in contact with each other, and the longitudinal cross sections of the first contact surface and the second contact surface are nested with each other
  • the regular zigzag shape; the refractive index n A of the first material layer, the refractive index n of the substrate, and the refractive index n B of the second material layer satisfy the condition: n A > n
  • the serrations are composed of a plurality of identical isosceles triangles, and a bottom edge of the isosceles triangle of the first material layer coincides with the surface of the substrate.
  • a base angle size of the isosceles triangle of the first material layer is calculated according to a refractive index of the first material layer.
  • the light extraction layer further includes a third material layer, the third material layer is located on the second material layer, a refractive index n c of the third material layer, and a refraction of the second material layer Rate n B .
  • the first material layer is formed on the substrate by imprinting.
  • the second material layer is formed on the first material layer by coating, and the top surface of the second material layer is a flat surface.
  • the first material layer is made of polycarbonate.
  • the OLED light emitting device further includes a light collecting layer sandwiched between the substrate and the anode, the light collecting layer and the anode respectively having a third contact surface and a fourth contact in contact with each other surface, a longitudinal section of the third contact surface and the fourth contact surface form of nested regular zigzag, the optical refractive index layer is gathered n 1> n the refractive index of the anode is positive.
  • the anode is filled on the light-concentrating layer by chemical vapor deposition, and the surface thereof is planar near the surface of the substrate.
  • the present invention also provides an OLED display device including an OLED light emitting device including a cathode, a light emitting layer, an anode, a substrate, and a light extraction layer, the light emitting layer being located at the cathode and the anode Between the anode and the light extraction layer; the top surface and the bottom surface of the light extraction layer are both planar, comprising at least a first material layer and a second material layer; the first material layer is located On the substrate, the second material layer is located on the first material layer, and the first material layer and the second material layer respectively have a first contact surface and a second contact surface that are in contact with each other, the first The longitudinal cross sections of the contact surface and the second contact surface are in a regular zigzag shape nested with each other; the refractive index n A of the first material layer, the refractive index n of the substrate, and the refractive index n B of the second material layer are satisfied.
  • n A > n substrate > n B .
  • the serrations are composed of a plurality of identical isosceles triangles, and a bottom edge of the isosceles triangle of the first material layer coincides with the surface of the substrate.
  • a base angle size of the isosceles triangle of the first material layer is calculated according to a refractive index of the first material layer.
  • the light extraction layer further includes a third material layer, the third material layer is located on the second material layer, a refractive index n c of the third material layer, and a refraction of the second material layer rate n B.
  • the first material layer is formed on the substrate by imprinting.
  • the second material layer is formed on the first material layer by coating, and the top surface of the second material layer is a flat surface.
  • the first material layer is made of polycarbonate.
  • the OLED light emitting device further includes a light collecting layer sandwiched between the substrate and the anode, the light collecting layer and the anode respectively having a third contact surface and a fourth contact in contact with each other surface, a longitudinal section of the third contact surface and the fourth contact surface form of nested regular zigzag, the optical refractive index layer is gathered n 1> n the refractive index of the anode is positive.
  • the anode is filled on the light-concentrating layer by chemical vapor deposition, and the surface thereof is planar near the surface of the substrate.
  • the OLED light emitting device and the display device of the present invention have a first material layer and a second material layer respectively having a first contact surface and a second contact surface on the substrate, and the first contact surface and the second contact surface are
  • the longitudinal section is a regular zigzag pattern nested in each other, and the n A > n substrate > n B can reduce the emission of light from the side of the OLED light emitting device, increase the amount of light emitted from the light emitting surface of the OLED light emitting device, and improve the light output of the OLED light emitting device. rate.
  • FIG. 1 is a schematic diagram of a propagation path of light rays in an OLED light-emitting device in the prior art
  • FIG. 2 is a schematic view showing a propagation path of light rays in an OLED light emitting device according to a first embodiment of the present invention.
  • FIG. 3 is a schematic diagram of a propagation path of light rays in an OLED light emitting device according to a second embodiment of the present invention.
  • FIG. 4 is a schematic view showing a propagation path of light rays in an OLED light emitting device according to a third embodiment of the present invention.
  • the present invention provides an OLED light emitting device, which in a preferred embodiment includes a cathode 1, an illuminating layer 2, an anode 3, a substrate 4, and a light extraction layer 5, and the luminescent layer 2 is located at the cathode 1 and the anode. Between 3, the substrate 4 is located between the anode 3 and the light extraction layer 5.
  • the top surface and the bottom surface of the light extraction layer 5 are both planar, and include at least a first material layer 51 and a second material layer 52.
  • the first material layer 51 is on the substrate 4, and the second material layer 52 is on the first material layer 51.
  • the first material layer 51 and the second material layer 52 have a first contact surface 511 and a second contact surface 521 which are in contact with each other, respectively.
  • the longitudinal cross sections of the first contact surface 511 and the second contact surface 521 are in a regular zigzag shape nested with each other.
  • Index of the first material layer 51 the refractive index n A, n the refractive index of the substrate material of the substrate 4 and a second layer 52 between the n satisfy the condition B: n A> n substrate> n B.
  • n A : n substrate sin ⁇ 1 : sin ⁇ 2
  • n A : n B sin ⁇ 4 : sin ⁇ 3
  • ⁇ 1 and ⁇ 2 are light rays B1 entering the first material layer 51 from the substrate 4, respectively.
  • the incident angle and the exit angle, ⁇ 3 and ⁇ 4 are the incident angle and the exit angle of the light B1 from the first material layer 51 into the second material layer 52, respectively.
  • the serration is composed of a plurality of identical isosceles triangles, and the bottom edge of the isosceles triangle of the first material layer 51 coincides with the surface of the substrate 4, and the bottom angle ⁇ is based on the refractive index of the first material layer 51.
  • the substrate 4 may be a glass plate or a quartz substrate having a refractive index of 1.52-1.53.
  • the first material layer 51 is made of polycarbonate and has a refractive index of 1.58-1.59 and a light transmittance of more than 90%.
  • the second material layer 52 is made of polymethyl methacrylate and has a refractive index of 1.49 and a light transmittance of more than 92%.
  • the anode 3 is first deposited on the surface-cleaned substrate 4 by radio frequency sputtering, and the surface of the anode 3 is flattened.
  • the material of the anode 3 is generally indium tin oxide (ITO).
  • the light-emitting layer 2 and the cathode 1 are sequentially formed on the anode 3 by vacuum evaporation, and the light-emitting layer 2 is made of an organic material having high light-emitting efficiency, and the material of the cathode 1 generally includes Ag, Al, Mg, or the like.
  • the first material layer 51 is formed on the substrate 4 by embossing, and the second material layer 52 is superposed on the first material layer 51 by coating, ensuring that the top surface of the second material layer 52 is a horizontal plane. .
  • the light-emitting layer 2 When a voltage is applied between the anode 3 and the cathode 1, the light-emitting layer 2 is excited to generate light B1, which is incident on the first material layer 51 and the second material layer 52 via the substrate 4, and is emitted from the second material layer 52 to In the air, since the longitudinal sections of the contact surfaces 511, 521 of the first material layer 51 and the second material layer 52 are regular zigzags nested in each other, and the refractive index n A of the first material layer 51 > the refractive index of the substrate 4 The n substrate > the refractive index n B of the second material layer 52, so that the light B1 incident on the first material layer 51 can maximize the direction of propagation, and as close as possible to the middle of the second material layer 52.
  • the light extraction layer 5 further includes a third material layer 53, the third material layer 53 is located on the second material layer 52, and the third material layer 53 is refracted.
  • the layer 52 is incident on the incident and exit angles of the third material layer 53.
  • the OLED light-emitting device further includes a light collecting layer 6, and the light is gathered.
  • the layer 6 is sandwiched between the substrate 4 and the anode 3, and the light collecting layer 6 and the anode 3 respectively have a third contact surface 61 and a fourth contact surface 31 which are in contact with each other, and the longitudinal direction of the third contact surface 61 and the fourth contact surface 31 cross section nested regular zigzag gather light-refractive index layer 6 male refractive index n 1 n> anode 3.
  • the anode 3 is filled on the light-concentrating layer 6 by chemical vapor deposition, and its surface close to the substrate 4 is flat, as shown in FIG.
  • the light collecting layer 6 is made of a high transmittance and high refractive index material such as ZnO, TiO 2 or the like.
  • the present invention provides an OLED display device (not shown) including the OLED light emitting device described in the above embodiments.
  • the display device can be a product or component having any display function, such as a television, a display, a digital photo frame, a mobile phone, a tablet (not shown).
  • the OLED light-emitting device and the display device by providing the first material layer 51 and the second material layer 52 having the first contact surface 511 and the second contact surface 521 on the substrate 4, respectively, and making the first The longitudinal sections of the contact surface 511 and the second contact surface 521 are regular zigzag nested in each other while the refractive index n A of the first material layer 51 > the refractive index of the substrate 4 n the refractive index of the substrate > the second material layer 52 n B can reduce the emission of light B1 from the side of the OLED light-emitting device, increase the amount of light B1 emitted from the light-emitting surface of the OLED light-emitting device, and improve the light-emitting rate of the OLED light-emitting device.

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Abstract

一种OLED发光器件及显示装置，OLED发光器件包括阴极（1）、发光层（2）、阳极（3）、基板（4）及光提取层（5）；光提取层至少包括第一材料层（51）和第二材料层（52），第一材料层位于基板上，第二材料层位于第一材料层上；第一材料层和第二材料层分别具有彼此接触的第一接触表面（511）和第二接触表面（521），第一接触表面和第二接触表面的纵截面呈相互嵌套的规则锯齿状；第一、二材料层和基板的折射率关系为：n 第一材料层＞n 基板＞n 第二材料层。能减少光线从OLED发光器件侧面的射出，增加OLED发光器件发光表面的光线射出量，提高OLED发光器件的出光率。

Description

一种 OLED 发光器件及显示装置 技术领域
本发明涉及显示器制造领域，特别是涉及一种OLED 发光器件及 显示装置。
背景技术
目前，由于OLED（有机发光二极管，Organic Light-Emitting Diode）具有自发光、视角广、反应速度快、对比度高、低能耗、绿色环保、寿命长、超轻薄和可柔性显示等诸多优点，其被广泛认可为下一代显示技术的焦点。
如图1所示，典型的OLED发光器件由玻璃基板10、ITO（indium tin oxide，铟锡氧化物）阳极（Anode）20、有机发光层30（Emitting Material Layer）与阴极40（Cathode）等所组成，其中，ITO阳极20与金属阴极40如同三明治般地将有机发光层30包夹其中，当电压注入阳极20的空穴（Hole）与阴极40来的电子（Electron）在有机发光层30结合时，激发有机材料而产生光线A1。
然而受玻璃基板10与空气表面层的反射及折射等因素的影响，大部分光线A1并不能逸出至OLED发光器件的发光表面（图中未示出），而会从发光表面的侧面射出，这样，使得从OLED发光表面射出的光线占有机发光层30所产生的全部光线A1的比率（即OLED发光器件的出光率）较低，这极大地制约了OLED发光器件的发展。因此如何提高 OLED 发光器件的出光率成为急需解决的一个重要难题。
 技术问题
本发明的目的在于提供一种OLED发光器件及显示装置，以解决现有OLED发光器件出光率低、亮度不够的问题。
 技术解决方案
为解决上述技术问题，本发明提供了一种OLED发光器件，其包括阴极、发光层、阳极、基板以及光提取层，所述发光层位于所述阴极和阳极之间，所述基板位于所述阳极和光提取层之间；所述光提取层的顶面和底面均为平面，其至少包括第一材料层和第二材料层；所述第一材料层位于所述基板上，所述第二材料层位于所述第一材料层上，所述第一材料层和第二材料层分别具有彼此接触的第一接触表面和第二接触表面，所述第一接触表面和第二接触表面的纵截面呈相互嵌套的规则锯齿状；所述第一材料层的折射率 nA 、基板的折射率 n 基板 以及第二材料层的折射率 nB 之间满足条件： nA ＞ n 基板 ＞ nB ；
所述锯齿由若干个相同的等腰三角形组成，且所述第一材料层的等腰三角形的底边与所述基板表面重合；
所述光提取层还包括第三材料层，所述第三材料层位于所述第二材料层上，所述第三材料层的折射率 nc ＜所述第二材料层的折射率 nB 。
进一步地，所述第一材料层的等腰三角形的底角大小根据所述第一材料层的折射率计算得出。
本发明还提供了一种OLED发光器件，其包括阴极、发光层、阳极、基板以及光提取层，所述发光层位于所述阴极和阳极之间，所述基板位于所述阳极和光提取层之间；所述光提取层的顶面和底面均为平面，其至少包括第一材料层和第二材料层；所述第一材料层位于所述基板上，所述第二材料层位于所述第一材料层上，所述第一材料层和第二材料层分别具有彼此接触的第一接触表面和第二接触表面，所述第一接触表面和第二接触表面的纵截面呈相互嵌套的规则锯齿状；所述第一材料层的折射率nA 、基板的折射率n 基板 以及第二材料层的折射率 nB 之间满足条件：nA ＞ n 基板 ＞ nB 。
进一步地，所述锯齿由若干个相同的等腰三角形组成，且所述第一材料层的等腰三角形的底边与所述基板表面重合。
进一步地，所述第一材料层的等腰三角形的底角大小根据所述第一材料层的折射率计算得出。
进一步地，所述光提取层还包括第三材料层，所述第三材料层位于所述第二材料层上，所述第三材料层的折射率nc ＜所述第二材料层的折射率nB 。
进一步地，所述第一材料层通过压印的方式形成于所述基板上。
进一步地，所述第二材料层通过涂覆的方式形成于所述第一材料层上，所述第二材料层的顶面为平面。
进一步地，所述第一材料层由聚碳酸酯制成。
进一步地，所述OLED发光器件还包括光聚拢层，所述光聚拢层夹置于所述基板和阳极之间，所述光聚拢层与阳极分别具有彼此接触的第三接触表面和第四接触表面，所述第三接触表面和第四接触表面的纵截面呈相互嵌套的规则锯齿状，所述光聚拢层的折射率 n1 ＞所述阳极的折射率 n 阳 。
进一步地，所述阳极通过化学气相沉积的方式填充于所述光聚拢层上，其靠近所述基板的表面为平面。
本发明还提供了一种OLED显示装置，所述OLED显示装置包括OLED发光器件，所述OLED发光器件包括阴极、发光层、阳极、基板以及光提取层，所述发光层位于所述阴极和阳极之间，所述基板位于所述阳极和光提取层之间；所述光提取层的顶面和底面均为平面，其至少包括第一材料层和第二材料层；所述第一材料层位于所述基板上，所述第二材料层位于所述第一材料层上，所述第一材料层和第二材料层分别具有彼此接触的第一接触表面和第二接触表面，所述第一接触表面和第二接触表面的纵截面呈相互嵌套的规则锯齿状；所述第一材料层的折射率nA 、基板的折射率n 基板 以及第二材料层的折射率nB 之间满足条件：nA ＞ n 基板 ＞ nB 。
进一步地，所述锯齿由若干个相同的等腰三角形组成，且所述第一材料层的等腰三角形的底边与所述基板表面重合。
进一步地，所述第一材料层的等腰三角形的底角大小根据所述第一材料层的折射率计算得出。
进一步地，所述光提取层还包括第三材料层，所述第三材料层位于所述第二材料层上，所述第三材料层的折射率nc ＜所述第二材料层的折射率nB 。
进一步地，所述第一材料层通过压印的方式形成于所述基板上。
进一步地，所述第二材料层通过涂覆的方式形成于所述第一材料层上，所述第二材料层的顶面为平面。
进一步地，所述第一材料层由聚碳酸酯制成。
进一步地，所述OLED发光器件还包括光聚拢层，所述光聚拢层夹置于所述基板和阳极之间，所述光聚拢层与阳极分别具有彼此接触的第三接触表面和第四接触表面，所述第三接触表面和第四接触表面的纵截面呈相互嵌套的规则锯齿状，所述光聚拢层的折射率 n1 ＞所述阳极的折射率 n 阳 。
进一步地，所述阳极通过化学气相沉积的方式填充于所述光聚拢层上，其靠近所述基板的表面为平面。
 有益效果
本发明所述的OLED发光器件及显示装置通过在基板上设置分别具有第一接触表面和第二接触表面的第一材料层和第二材料层，并使第一接触表面和第二接触表面的纵截面为相互嵌套的规则锯齿状，同时使nA ＞ n 基板 ＞ nB ，能减少光线从OLED发光器件侧面的射出，增加OLED发光器件发光表面的光线射出量，提高OLED发光器件的出光率。
 附图说明
图1为现有技术中光线在OLED发光器件的传播路线示意图；
图2为本发明第一实施例中光线在OLED发光器件的传播路线示意图。
图3为本发明第二实施例中光线在OLED发光器件的传播路线示意图。
图4为本发明第三实施例中光线在OLED发光器件的传播路线示意图。
 本发明的最佳实施方式
为使本发明所要解决的技术问题、技术方案及有益效果更加清楚明白，以下结合附图及实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。
请参阅图2，本发明提供了一种OLED发光器件，其于一较佳实施方式中包括阴极1、发光层2、阳极3、基板4以及光提取层5，发光层2位于阴极1和阳极3之间，基板4位于阳极3和光提取层5之间。光提取层5的顶面和底面均为平面，其至少包括第一材料层51和第二材料层52。第一材料层51位于基板4上，第二材料层52位于第一材料层51上，第一材料层51和第二材料层52分别具有彼此接触的第一接触表面511和第二接触表面521，第一接触表面511和第二接触表面521的纵截面呈相互嵌套的规则锯齿状。第一材料层51的折射率 nA 、基板4的折射率n 基板 以及第二材料层52的折射率nB 之间满足条件：nA ＞ n 基板 ＞ nB 。其中， nA ： n 基板 =sin β 1 :sin β 2 ， nA:nB=sin β 4 :sin β 3 ， β 1 和β 2 分别为光线B1从基板4射入第一材料层51的入射角和出射角， β 3 和β 4 分别为光线B1从第一材料层51射入第二材料层52的入射角和出射角。
本实施例中，该锯齿由若干个相同的等腰三角形组成，且第一材料层51的等腰三角形的底边与基板4表面重合，其底角θ大小根据第一材料层51的折射率计算得出。基板4可以为玻璃板或石英基板，其折射率为1.52-1.53。第一材料层51由聚碳酸酯制成，其折射率为1.58-1.59，透光率大于90%。第二材料层52由聚甲基丙烯酸甲酯制成，其折射率为1.49，透光率大于92%。
制作时，首先在表面洁净的基板4上利用射频溅镀法沉积阳极3，并且使该阳极3表面平整化，阳极3材料一般为氧化铟锡（ITO）。接着，在阳极3上通过真空蒸镀的方式依次形成发光层2和阴极1，该发光层2由发光效率高的有机材料制成，该阴极1的材料一般包括Ag、Al、Mg等。最后，将第一材料层51通过压印的方式形成于基板4上，将第二材料层52通过涂覆的方式叠加在第一材料层51上，确保第二材料层52的顶面为水平面。
当向阳极3和阴极1之间施加电压时，发光层2受到激发产生光线B1，光线B1经由基板4射入第一材料层51和第二材料层52，并由第二材料层52射出至空气中，由于第一材料层51和第二材料层52的接触表面511、521的纵截面为相互嵌套的规则锯齿状，且第一材料层51的折射率 nA ＞基板 4 的折射率 n 基板 ＞第二材料层 52 的折射率 nB ，故射入第一材料层51的光线B1能最大化的改变传播方向，尽可能的向第二材料层52的中间靠拢射出。
在另一较佳实施例中，为进一步使光线B1往中间靠拢，光提取层5还包括第三材料层53，第三材料层53位于第二材料层52上，第三材料层53的折射率 nc ＞第二材料层 52 的折射率 nB ，如图3所示，其中， nB ： nC=sin β 6 :sin β 5 ，β 5 和β 6 分别为光线B1从第二材料层52射入第三材料层53的入射角和出射角。
在其它较佳实施例中，为减少阳极3与玻璃基板10表面层的反射及折射等因素的影响，避免大量光子从阳极3的侧面逸出，OLED发光器件还包括光聚拢层6，光聚拢层6夹置于基板4和阳极3之间，光聚拢层6与阳极3分别具有彼此接触的第三接触表面61和第四接触表面31，第三接触表面61和第四接触表面31的纵截面呈相互嵌套的规则锯齿状，光聚拢层6的折射率 n1 ＞ 阳极 3 的折射率 n 阳 。本实施例中，阳极3通过化学气相沉积的方式填充于光聚拢层6上，其靠近基板4的表面为平面，如图4所示。光聚拢层6由高透过率和高折射率材料制成，譬如 ZnO 、 TiO2 等。
此外，本发明还提供了一种OLED显示装置（图中未示出），包括上述实施例描述的OLED发光器件。该显示装置可以为电视、显示器、数码相框、手机、平板电脑（图中未示出）等具有任何显示功能的产品或部件。
本发明实施例所述的OLED发光器件及显示装置，通过在基板4上设置分别具有第一接触表面511和第二接触表面521的第一材料层51和第二材料层52，并使第一接触表面511和第二接触表面521的纵截面为相互嵌套的规则锯齿状，同时使第一材料层51的折射率 nA ＞基板 4 的折射率 n 基板 ＞第二材料层 52 的折射率 nB ，能减少光线B1从OLED发光器件侧面的射出，增加OLED发光器件发光表面的光线B1射出量，提高OLED发光器件的出光率。
以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。

Claims (20)

  1. 一种OLED发光器件，其包括阴极、发光层、阳极、基板以及光提取层，所述发光层位于所述阴极和阳极之间，所述基板位于所述阳极和光提取层之间；所述光提取层的顶面和底面均为平面，其至少包括第一材料层和第二材料层；所述第一材料层位于所述基板上，所述第二材料层位于所述第一材料层上，所述第一材料层和第二材料层分别具有彼此接触的第一接触表面和第二接触表面，所述第一接触表面和第二接触表面的纵截面呈相互嵌套的规则锯齿状；所述第一材料层的折射率 nA 、基板的折射率n 基板 以及第二材料层的折射率nB 之间满足条件：nA ＞ n 基板 ＞ nB ；
    所述锯齿由若干个相同的等腰三角形组成，且所述第一材料层的等腰三角形的底边与所述基板表面重合；
    所述光提取层还包括第三材料层，所述第三材料层位于所述第二材料层上，所述第三材料层的折射率nC ＜所述第二材料层的折射率nB 。
  2. 如权利要求1所述的OLED发光器件，其中所述第一材料层的等腰三角形的底角大小根据所述第一材料层的折射率计算得出。
  3. 一种OLED发光器件，其包括阴极、发光层、阳极、基板以及光提取层，所述发光层位于所述阴极和阳极之间，所述基板位于所述阳极和光提取层之间；所述光提取层的顶面和底面均为平面，其至少包括第一材料层和第二材料层；所述第一材料层位于所述基板上，所述第二材料层位于所述第一材料层上，所述第一材料层和第二材料层分别具有彼此接触的第一接触表面和第二接触表面，所述第一接触表面和第二接触表面的纵截面呈相互嵌套的规则锯齿状；所述第一材料层的折射率 nA 、基板的折射率n 基板 以及第二材料层的折射率nB 之间满足条件：nA ＞ n 基板 ＞ nB 。
  4. 如权利要求3所述的OLED发光器件，其中所述锯齿由若干个相同的等腰三角形组成，且所述第一材料层的等腰三角形的底边与所述基板表面重合。
  5. 如权利要求4所述的OLED发光器件，其中所述第一材料层的等腰三角形的底角大小根据所述第一材料层的折射率计算得出。
  6. 如权利要求3所述的OLED发光器件，其中所述光提取层还包括第三材料层，所述第三材料层位于所述第二材料层上，所述第三材料层的折射率nC ＜所述第二材料层的折射率nB 。
  7. 如权利要求3所述的OLED发光器件，其中所述第一材料层通过压印的方式形成于所述基板上。
  8. 如权利要求3所述的OLED发光器件，其中所述第二材料层通过涂覆的方式形成于所述第一材料层上，所述第二材料层的顶面为平面。
  9. 如权利要求3所述的OLED发光器件，其中所述第一材料层由聚碳酸酯制成。
  10. 如权利要求3所述的OLED发光器件，其中所述OLED发光器件还包括光聚拢层，所述光聚拢层夹置于所述基板和阳极之间，所述光聚拢层与阳极分别具有彼此接触的第三接触表面和第四接触表面，所述第三接触表面和第四接触表面的纵截面呈相互嵌套的规则锯齿状，所述光聚拢层的折射率 n1 ＞所述阳极的折射率n 阳 。
  11. 如权利要求10所述的OLED发光器件，其中所述阳极通过化学气相沉积的方式填充于所述光聚拢层上，其靠近所述基板的表面为平面。
  12. 一种OLED显示装置，其包括OLED发光器件，所述OLED发光器件包括阴极、发光层、阳极、基板以及光提取层，所述发光层位于所述阴极和阳极之间，所述基板位于所述阳极和光提取层之间；所述光提取层的顶面和底面均为平面，其至少包括第一材料层和第二材料层；所述第一材料层位于所述基板上，所述第二材料层位于所述第一材料层上，所述第一材料层和第二材料层分别具有彼此接触的第一接触表面和第二接触表面，所述第一接触表面和第二接触表面的纵截面呈相互嵌套的规则锯齿状；所述第一材料层的折射率nA 、基板的折射率n 基板 以及第二材料层的折射率nB 之间满足条件：nA ＞ n 基板 ＞ nB 。
  13. 如权利要求12所述的OLED显示装置，其中所述锯齿由若干个相同的等腰三角形组成，且所述第一材料层的等腰三角形的底边与所述基板表面重合。
  14. 如权利要求13所述的OLED显示装置，其中所述第一材料层的等腰三角形的底角大小根据所述第一材料层的折射率计算得出。
  15. 如权利要求12所述的OLED显示装置，其中所述光提取层还包括第三材料层，所述第三材料层位于所述第二材料层上，所述第三材料层的折射率nC ＜所述第二材料层的折射率 nB 。
  16. 如权利要求12所述的OLED显示装置，其中所述第一材料层通过压印的方式形成于所述基板上。
  17. 如权利要求12所述的OLED显示装置，其中所述第二材料层通过涂覆的方式形成于所述第一材料层上，所述第二材料层的顶面为平面。
  18. 如权利要求12所述的OLED显示装置，其中所述第一材料层由聚碳酸酯制成。
  19. 如权利要求12所述的OLED发光器件，其中所述OLED发光器件还包括光聚拢层，所述光聚拢层夹置于所述基板和阳极之间，所述光聚拢层与阳极分别具有彼此接触的第三接触表面和第四接触表面，所述第三接触表面和第四接触表面的纵截面呈相互嵌套的规则锯齿状，所述光聚拢层的折射率 n1 ＞所述阳极的折射率n 阳 。
  20. 如权利要求19所述的OLED发光器件，其中所述阳极通过化学气相沉积的方式填充于所述光聚拢层上，其靠近所述基板的表面为平面。
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