WO2017044201A1 - Substrate support with real time force and film stress control - Google Patents
Substrate support with real time force and film stress control Download PDFInfo
- Publication number
- WO2017044201A1 WO2017044201A1 PCT/US2016/044989 US2016044989W WO2017044201A1 WO 2017044201 A1 WO2017044201 A1 WO 2017044201A1 US 2016044989 W US2016044989 W US 2016044989W WO 2017044201 A1 WO2017044201 A1 WO 2017044201A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- sensor
- workpiece
- sensor assembly
- substrate support
- support surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/3299—Feedback systems
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
- H10P72/722—Details of electrostatic chucks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
- H10P72/7606—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
- H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
- H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/27—Structural arrangements therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D11/00—Component parts of measuring arrangements not specially adapted for a specific variable
- G01D11/24—Housings ; Casings for instruments
- G01D11/245—Housings for sensors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/26—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/26—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light
- G01D5/266—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light by interferometric means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/26—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light
- G01D5/268—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light using optical fibres
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L11/00—Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by means not provided for in group G01L7/00 or G01L9/00
- G01L11/02—Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by means not provided for in group G01L7/00 or G01L9/00 by optical means
- G01L11/025—Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by means not provided for in group G01L7/00 or G01L9/00 by optical means using a pressure-sensitive optical fibre
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Definitions
- a workpiece may need to be precisely held by a fixture during manufacturing operations to increase uniform quality and reduce defects.
- a substrate support may be used as the fixture to hold the workpiece against a supporting structure.
- An electrostatic force or other force (“clamping force”) often is used to precisely hold the workpiece to a workpiece support surface of the substrate support during one or more manufacturing operations.
- Figure 1 illustrates one embodiment of the sensor assembly 190.
- Figure 1 depicts a schematic view of an exemplary plasma processing chamber 100 having a substrate support assembly 170 installed therein.
- the substrate support assembly 170 has a sensor assembly 190 disposed therein.
- the plasma processing chamber 100 is a sputter etch processing chamber or a plasma etch system.
- other types of processing chambers such as physical vapor deposition (i.e. , sputtering) chambers, chemical vapor depositional chambers, or other vacuum processing chambers, may also be used to practice the embodiments disclosed herein.
- the substrate support assembly 170 includes an electrostatic chuck 122.
- the substrate support assembly 170 may additionally include a cooling plate 151 , and a support base 152.
- the support base 152 may include a support housing 149, bellows assembly 1 10 and a support shaft 1 12.
- the support shaft 1 12 may be coupled to a lift mechanism 1 13 which may provide vertical movement of the substrate support assembly 170 between an upper, processing position, as shown, and a lower workpiece transfer position (not shown).
- the bellows assembly 1 10 may be disposed about the support shaft 1 12 and may be coupled between the support base 152 and the bottom surface 126 of the processing chamber 100 to provide a flexible seal that allows vertical motion of the substrate support assembly 170 while preventing loss of vacuum from within the processing chamber 100.
- the sensor assembly 190 is shown mounted in a puck 150 of Figure 1 , advantageously, a similar arrangement for mounting of the sensor assembly 190 may be extended to other products where it is required to measure the deflection of the parts in nanometers or at the microns level.
- the following discussion of the sensor assembly 190 and the advantages will be discussed with regards to the puck 150 described above.
- the operating parameters for puck 150 may be advantageously controlled with a feedback loop relying on the data provided by the sensor assembly 190.
- the measurement of deflection by the sensor assembly 190 can be extended to additionally calculate the vibration and the force exerted on the workpiece 101 for relieving film stress and maintaining a planar surface on the workpiece 101 for reducing variations and defects in the film layers formed on the workpiece 101 during processing.
- the backside gas enters the tee connection 310 via the opening second 334.
- the wiring thru-fitting 340 is attached to the third opening 322 to fluidly seal the third opening 322 while allowing communication between the sensor assembly 190 and the control system 194.
- the tee connection 310 splits the fluid source for the backside gas and the communication to the control system 194 from the backside gas delivery hole 198 of the puck 150.
- the body 401 of the mounting head 224 has a plurality of holes 464.
- the holes 464 extend from the top surface 409 to the bottom surface 408.
- the mounting head 224 has 4 holes 464.
- the mounting head has 6 or more holes 464.
- the holes 464 are configured to permit fluid to flow past the body 401 of the mounting head 224 when the sensor assembly 190 is mounted in the backside gas delivery hole 198.
- the sensor assembly 190 may be installed inside an existing fluid delivery hole in a conventional electrostatic chuck, thus allow a retrofit of an existing electrostatic chuck without the sensor assembly 190 interfering with the flow of fluid through the hole accommodating the sensor assembly 190.
- the body 401 of the mounting head 224 additionally has one or more pins 474.
- the pins 474 extend from the top surface 409 past the bottom surface 408.
- the mounting head 224 has three pins 474 for interfacing with and locating the mounting head 224 in the split plate 222.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020187010116A KR102696914B1 (en) | 2015-09-11 | 2016-08-01 | Substrate support with real-time force and film stress control |
| KR1020247027406A KR20240129089A (en) | 2015-09-11 | 2016-08-01 | Substrate support with real time force and film stress control |
| JP2018512877A JP6878413B2 (en) | 2015-09-11 | 2016-08-01 | Substrate support with real-time force and membrane stress control |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/852,485 US10879046B2 (en) | 2015-09-11 | 2015-09-11 | Substrate support with real time force and film stress control |
| US14/852,485 | 2015-09-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2017044201A1 true WO2017044201A1 (en) | 2017-03-16 |
Family
ID=58237095
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US2016/044989 Ceased WO2017044201A1 (en) | 2015-09-11 | 2016-08-01 | Substrate support with real time force and film stress control |
Country Status (7)
| Country | Link |
|---|---|
| US (4) | US10879046B2 (en) |
| JP (3) | JP6878413B2 (en) |
| KR (2) | KR20240129089A (en) |
| CN (3) | CN206610799U (en) |
| SG (1) | SG10202002453XA (en) |
| TW (3) | TW202036780A (en) |
| WO (1) | WO2017044201A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110491756A (en) * | 2017-05-15 | 2019-11-22 | 应用材料公司 | Real-time monitoring with closed-loop clamping force control |
| TWI908696B (en) * | 2024-08-19 | 2025-12-11 | 大陸商安徽風雲起科技有限公司 | Wafer heaters and chemical vapor deposition systems |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2017209901A2 (en) * | 2016-06-03 | 2017-12-07 | Applied Materials, Inc. | Substrate distance monitoring |
| JP6457468B2 (en) * | 2016-12-08 | 2019-01-23 | ファナック株式会社 | Deburring device |
| DE102017208645A1 (en) * | 2017-05-22 | 2018-11-22 | Siemens Aktiengesellschaft | Probe head |
| US10704142B2 (en) * | 2017-07-27 | 2020-07-07 | Applied Materials, Inc. | Quick disconnect resistance temperature detector assembly for rotating pedestal |
| US11114327B2 (en) * | 2017-08-29 | 2021-09-07 | Applied Materials, Inc. | ESC substrate support with chucking force control |
| KR20190029365A (en) * | 2017-09-12 | 2019-03-20 | 삼성전자주식회사 | Lift pin assembly, substrate support apparatus and substrate processing apparatus having the same |
| CN111989770B (en) * | 2018-03-23 | 2024-07-16 | 应用材料公司 | Isolated backside helium delivery system |
| US10971352B2 (en) | 2018-07-16 | 2021-04-06 | Taiwan Semiconductor Manufacturing Co., Ltd | Cleaning method and apparatus |
| US10927461B2 (en) * | 2018-08-31 | 2021-02-23 | Applied Materials, Inc. | Gas diffuser support structure for reduced particle generation |
| CN109231152B (en) * | 2018-09-30 | 2020-06-16 | 重庆大学 | Micro-clamps for measuring clamping force and jaw displacement using a fiber-optic Fabry-Perot interferometer |
| CN109129410B (en) * | 2018-09-30 | 2021-07-27 | 重庆大学 | The gripper is a fiber-optic Fabry-Perot interferometer and can grip force self-sensing micro gripper |
| JP7209515B2 (en) * | 2018-11-27 | 2023-01-20 | 東京エレクトロン株式会社 | Substrate holding mechanism and deposition equipment |
| US12125728B2 (en) * | 2019-01-21 | 2024-10-22 | Applied Materials, Inc. | Substrate carrier |
| CN112470249B (en) * | 2019-05-14 | 2022-05-27 | 玛特森技术公司 | Plasma processing apparatus with focus ring adjustment assembly |
| US11415463B2 (en) * | 2019-06-04 | 2022-08-16 | Applied Materials, Inc. | Contactless workpiece temperature sensor |
| US20220228263A1 (en) * | 2019-06-07 | 2022-07-21 | Lam Research Corporation | Independently adjustable flowpath conductance in multi-station semiconductor processing |
| KR20250164864A (en) * | 2019-11-22 | 2025-11-25 | 램 리써치 코포레이션 | Coin-slot and ball-lock ceramic lift pin holders |
| WO2022174919A1 (en) * | 2021-02-19 | 2022-08-25 | Applied Materials, Inc. | Substrate support, method of processing a substrate, and processing system |
| CN215925072U (en) * | 2020-09-24 | 2022-03-01 | 株式会社国际电气 | Substrate processing apparatus |
| WO2022173720A1 (en) * | 2021-02-09 | 2022-08-18 | Fuse Energy Technologies Corp. | Adjustable probe for plasma diagnostics |
| US11851761B2 (en) * | 2021-04-16 | 2023-12-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor processing tool |
| US20230141012A1 (en) * | 2021-11-09 | 2023-05-11 | Applied Materials, Inc. | Pressure puck diagnostic wafer |
| CN116476193B (en) * | 2023-03-24 | 2024-01-05 | 上海数造机电科技股份有限公司 | Ceramic 3D printing construction platform, method and system based on electrostatic adsorption |
| CN116552611B (en) * | 2023-05-11 | 2025-11-25 | 盛吉盛(宁波)半导体科技有限公司 | A base fixture for supporting and transporting electrostatic chuck assemblies |
| US12449738B2 (en) * | 2023-06-20 | 2025-10-21 | Applied Materials, Inc. | Rotary substrate support for aligning a substrate |
| WO2025155847A1 (en) * | 2024-01-18 | 2025-07-24 | Watlow Electric Manufacturing Company | Electrical termination for ceramic pedestal with embedded electrical components |
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Also Published As
| Publication number | Publication date |
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| US10879046B2 (en) | 2020-12-29 |
| TW201711132A (en) | 2017-03-16 |
| US20240258075A1 (en) | 2024-08-01 |
| CN107039325B (en) | 2024-01-19 |
| CN206610799U (en) | 2017-11-03 |
| TWI670792B (en) | 2019-09-01 |
| SG10202002453XA (en) | 2020-05-28 |
| US11915913B2 (en) | 2024-02-27 |
| KR20240129089A (en) | 2024-08-27 |
| US20230253188A1 (en) | 2023-08-10 |
| US20210066038A1 (en) | 2021-03-04 |
| JP6878413B2 (en) | 2021-05-26 |
| JP7112565B2 (en) | 2022-08-03 |
| JP2018530150A (en) | 2018-10-11 |
| KR20180041248A (en) | 2018-04-23 |
| US11676802B2 (en) | 2023-06-13 |
| CN117976601A (en) | 2024-05-03 |
| CN107039325A (en) | 2017-08-11 |
| TWI729429B (en) | 2021-06-01 |
| TW202036780A (en) | 2020-10-01 |
| JP2022159321A (en) | 2022-10-17 |
| TW201944532A (en) | 2019-11-16 |
| JP7443430B2 (en) | 2024-03-05 |
| KR102696914B1 (en) | 2024-08-19 |
| US12424413B2 (en) | 2025-09-23 |
| JP2021121030A (en) | 2021-08-19 |
| US20170076915A1 (en) | 2017-03-16 |
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