WO2017035915A1 - Psva型液晶显示面板 - Google Patents

Psva型液晶显示面板 Download PDF

Info

Publication number
WO2017035915A1
WO2017035915A1 PCT/CN2015/091804 CN2015091804W WO2017035915A1 WO 2017035915 A1 WO2017035915 A1 WO 2017035915A1 CN 2015091804 W CN2015091804 W CN 2015091804W WO 2017035915 A1 WO2017035915 A1 WO 2017035915A1
Authority
WO
WIPO (PCT)
Prior art keywords
passivation layer
liquid crystal
substrate
display panel
crystal display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2015/091804
Other languages
English (en)
French (fr)
Inventor
甘启明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TCL China Star Optoelectronics Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Priority to US14/787,766 priority Critical patent/US9817280B2/en
Publication of WO2017035915A1 publication Critical patent/WO2017035915A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/133711—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by organic films, e.g. polymeric films
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/133707—Structures for producing distorted electric fields, e.g. bumps, protrusions, recesses, slits in pixel electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/137—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering
    • G02F1/139—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering based on orientation effects in which the liquid crystal remains transparent
    • G02F1/1393—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering based on orientation effects in which the liquid crystal remains transparent the birefringence of the liquid crystal being electrically controlled, e.g. ECB-, DAP-, HAN-, PI-LC cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/133742—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers for homeotropic alignment
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134318—Electrodes characterised by their geometrical arrangement having a patterned common electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
    • G02F1/136236—Active matrix addressed cells for reducing the number of lithographic steps using a grey or half tone lithographic process
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/137—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering
    • G02F1/13775—Polymer-stabilized liquid crystal layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/121—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/122—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode having a particular pattern
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2203/00—Function characteristic
    • G02F2203/01—Function characteristic transmissive

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a PSVA type liquid crystal display panel.
  • TFT-LCD Active Thin Film Transistor-LCD
  • TN Twisted Nematic
  • STN Super Twisted Nematic
  • IPS In -Plane Switching
  • VA Vertical Alignment
  • the VA type liquid crystal display has a very high contrast ratio with respect to other types of liquid crystal displays, and has a very wide application in a large-sized display such as a television.
  • the reason why the VA type liquid crystal display panel has a very high contrast is because the liquid crystal molecules are arranged perpendicular to the surface of the substrate in the uncharged dark state, and no phase difference is generated, the light leakage is extremely low, and the dark state brightness is small, which is calculated according to the contrast ratio.
  • multi-domain VA (MVA) is usually adopted, that is, one sub-pixel is divided into a plurality of regions, and each is made The liquid crystals in the region are undulating in different directions after the voltage is applied, so that the effects seen in the respective directions tend to be average and uniform.
  • MVA multi-domain VA
  • One method is to process one side of the ITO pixel electrode into a "m-shaped" pattern. Due to the special ITO pixel electrode pattern, the oblique electric field generated can induce liquid crystal in different regions. The molecules fall in different directions.
  • PSVA Polymer-stabilized vertical alignment
  • a polymer protrusion is formed on the surface of the alignment film so that the liquid crystal molecules have a pretilt angle.
  • a general PSVA pixel structure is a patterning process in which a pixel electrode deposited thereon is patterned after a passivation layer for channel protection on the array substrate is completed.
  • the present invention is a PSVA type liquid crystal display panel including an upper substrate 100 and a lower substrate 200.
  • the upper substrate 100 includes a first substrate 110 and a planar common electrode 120, and the lower substrate 200
  • the second substrate 210, the passivation layer 220, and the pixel electrode 230 are included, and the pixel electrode 230 has a "m-shaped" pattern.
  • the pixel electrode 230 of the "m-shaped" pattern has a pattern of pixel electrode branches and slits extending in different directions, resulting in an electric field unevenness with the common electrode 120 on the upper substrate 110 on the opposite side, corresponding to the pixel electrode
  • the electric field in the branch region is significantly stronger than the electric field corresponding to the slit region, resulting in uneven brightness in the pixel.
  • a novel PSVA type liquid crystal display panel has been proposed.
  • a pattern on the passivation layer By forming a pattern on the passivation layer, a plurality of trenches are obtained, and then the entire passivation layer is covered on the entire surface.
  • Pixel electrode By forming a pattern on the passivation layer, a plurality of trenches are obtained, and then the entire passivation layer is covered on the entire surface.
  • Pixel electrode Compared with the conventional PSVA type liquid crystal display panel, the PSVA type liquid crystal display panel has the advantages of high transmittance, insensitive to cell gap and line/space. However, different groove depths will result in different transmittances, and now what kind of groove depth can make the liquid crystal display panel achieve optimal optical performance, which still has doubts, which will bring uncertainty to the process debugging. .
  • the object of the present invention is to provide a PSVA type liquid crystal display panel, which has high transmittance and good pixel quality, and reduces the process range of the panel production, thereby shortening the time of process debugging and improving product production efficiency.
  • the present invention provides a PSVA type liquid crystal display panel, including an upper substrate, a lower substrate disposed opposite the upper substrate, and a liquid crystal layer between the upper substrate and the lower substrate;
  • the upper substrate includes a first substrate and a common electrode disposed on the first substrate;
  • the lower substrate includes a second substrate, a thin film transistor disposed on the second substrate, a passivation layer disposed on the second substrate and the thin film transistor, and a pixel electrode disposed on the passivation layer;
  • the lower substrate has a plurality of pixel regions, and the passivation layer is formed with the same pattern corresponding to the plurality of pixel regions; the pattern includes a plurality of trenches extending in different directions;
  • the pixel electrode is a uniform surface electrode with uniform thickness and continuous uninterrupted; the pixel electrode is entirely attached to the patterned passivation layer and has a corresponding pattern with the passivation layer;
  • the depth of the groove is the
  • the passivation layer is divided into four sub-regions corresponding to each pixel region.
  • the pattern is a "m-shaped" pattern, the passivation layer comprising a vertical stem in each pixel region, a horizontal stem perpendicularly intersecting the vertical stem, and a vertical stem or level respectively a plurality of strip branches connected to each other and extending to the periphery; the plurality of strip branches are spaced apart from each other and at an angle with the vertical trunk or the horizontal trunk; the grooves are located adjacent to each other Between strips.
  • the included angle is 45 degrees.
  • the material of the passivation layer is silicon nitride.
  • the material of the common electrode and the pixel electrode is ITO.
  • the thin film transistor includes a drain, and the passivation layer is provided with a via hole above the drain, and the pixel electrode is connected to the drain of the thin film transistor through the via.
  • the vias and trenches are simultaneously fabricated through a yellow light process through a gray scale mask.
  • the common electrode is a planar common electrode having a uniform thickness and continuous uninterrupted.
  • the present invention also provides a PSVA type liquid crystal display panel, comprising an upper substrate, a lower substrate disposed opposite the upper substrate, and a liquid crystal layer between the upper substrate and the lower substrate;
  • the upper substrate includes a first substrate and a common electrode disposed on the first substrate;
  • the lower substrate includes a second substrate, a thin film transistor disposed on the second substrate, a passivation layer disposed on the second substrate and the thin film transistor, and a pixel electrode disposed on the passivation layer;
  • the lower substrate has a plurality of pixel regions, and the passivation layer is formed with the same pattern corresponding to the plurality of pixel regions; the pattern includes a plurality of trenches extending in different directions;
  • the pixel electrode is a uniform surface electrode with uniform thickness and continuous uninterrupted; the pixel electrode is entirely attached to the patterned passivation layer and has a corresponding pattern with the passivation layer;
  • the depth of the groove is the
  • the passivation layer is divided into four sub-regions;
  • the material of the passivation layer is silicon nitride
  • the material of the common electrode and the pixel electrode is ITO;
  • the thin film transistor includes a drain, and the passivation layer is provided with a via hole corresponding to the drain, and the pixel electrode is connected to the drain of the thin film transistor through the via hole;
  • the common electrode is a planar common electrode with uniform thickness and continuous uninterrupted.
  • the passivation layer is a patterned passivation layer, and the patterned passivation layer has a plurality of spaced-apart grooves, and the pixel electrodes are uniform in thickness and continuous. Intermittent full-surface electrode, the entire surface of the pixel electrode is attached to the patterned passivation layer and has a corresponding pattern with the passivation layer, so that the liquid crystal panel has a higher transmittance; and by passing the groove The depth of the slot is set to The liquid crystal panel has achieved good optical performance, and the process range of the panel production is reduced, the time for process debugging is shortened, and the production efficiency of the product is improved.
  • FIG. 1 is a schematic perspective view showing a conventional PSVA type liquid crystal display panel
  • FIG. 2 is a cross-sectional structural view showing a lower substrate of the PSVA type liquid crystal display panel of FIG. 1;
  • FIG. 3 is a schematic perspective view showing a structure of a PSVA type liquid crystal display panel of the present invention.
  • FIG. 4 is a cross-sectional structural view showing a lower substrate of the PSVA type liquid crystal display panel of FIG. 3.
  • the present invention provides a PSVA type liquid crystal display panel including an upper substrate 1 , a lower substrate 2 disposed opposite to the upper substrate 1 , and between the upper substrate 1 and the lower substrate 2 .
  • Liquid crystal layer (not shown);
  • the upper substrate 1 includes a first substrate 11 and a common electrode 12 disposed on the first substrate 11;
  • the lower substrate 2 includes a second substrate 21, a thin film transistor disposed on the second substrate 21, a passivation layer 22 disposed on the second substrate 21 and the thin film transistor, and a passivation layer a pixel electrode 23 on 22;
  • the lower substrate 2 has a plurality of pixel regions, the passivation layer 22 is a patterned passivation layer, and the passivation layer 22 is formed with the same pattern corresponding to the plurality of pixel regions; the pattern includes a plurality of grooves 221 extending in different directions;
  • the pixel electrode 23 is a uniform surface electrode having a uniform thickness and continuous uninterrupted; as shown in FIG. 3, the entire surface of the pixel electrode 23 covers the patterned passivation layer 22, thereby having a passivation layer 22 Corresponding pattern.
  • the depth of the trench 221 is an extremely important parameter, and the depth of the trench 221 greatly affects the liquid crystal reversal and the optical performance of the liquid crystal display panel, and the trench 221 on the passivation layer 22 Different depths, the transmittance of the corresponding liquid crystal panel is also different.
  • the existing PSVA type liquid crystal display panel does not specifically define the depth of the trench 221, thus resulting in selectable process parameters and optical performance obtained. random.
  • the depth of the trench 221 is At this time, the alignment effect of the liquid crystal is the best, and the liquid crystal panel has an optimum optical performance.
  • the thickness of the passivation layer 22 is ⁇
  • the grooves 221 can be set to different widths as needed.
  • the patterned passivation layer 22 is divided into four sub-regions corresponding to each pixel region; the patterned passivation layer 22 has a "m-shaped" pattern,
  • the passivation layer 22 includes a vertical stem in each pixel region, a horizontal trunk perpendicularly intersecting the vertical stem, and a plurality of strips respectively connected to the vertical stem or the horizontal trunk and extending respectively to the periphery a plurality of strips spaced apart from each other and at an angle to the vertical stem or horizontal stem; the grooves 221 being located between adjacent strips. Specifically, the angle is 45 degrees.
  • the material of the passivation layer 221 is silicon nitride.
  • the material of the common electrode 12 and the pixel electrode 23 is transparent ITO.
  • the thin film transistor includes a drain electrode 24 , and the passivation layer 22 is provided with a via hole 223 corresponding to the drain electrode 24 , and the pixel electrode 23 passes through the via hole 223 . Connected to the drain 24 of the thin film transistor.
  • the via hole 223 and the trench 221 can be simultaneously formed by a yellow light process through a Gray Tone Mask (GTM), and the process is not increased compared with the conventional PSVA type liquid crystal display panel.
  • GTM Gray Tone Mask
  • the common electrode 12 is a planar common electrode having a uniform thickness and continuous uninterrupted.
  • the passivation layer is a patterned passivation layer, and the patterned passivation layer has a plurality of spaced-apart grooves, and the pixel electrodes are uniform in thickness and continuous without interruption.
  • Full-surface electrode the entire surface of the pixel electrode is attached to the patterned passivation layer and has a corresponding pattern with the passivation layer, so that the liquid crystal panel has a higher transmittance; and by using the trench.
  • the depth is set to The liquid crystal panel has achieved good optical performance, and the process range of the panel production is reduced, the time for process debugging is shortened, and the production efficiency of the product is improved.

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Geometry (AREA)
  • Liquid Crystal (AREA)

Abstract

一种PSVA型液晶显示面板，包括上基板(1)、与上基板(1)相对设置的下基板(2)、及位于上基板(1)与下基板(2)之间的液晶层；所述下基板(2)包括第二基板(21)、薄膜晶体管、钝化层(22)、以及像素电极(23)；所述下基板(2)具有数个像素区域，所述钝化层(22)为图案化的钝化层，对应数个像素区域内分别形成有相同的图案，所述图案包括向不同方向延伸的数道沟槽(221)；所述像素电极(23)整面附着于图案化的钝化层(22)上而随钝化层(22)具有相应的图案；所述沟槽(221)的深度为2000-4000 。该PSVA型液晶显示面板具有较高的穿透率和优良的光学表现。

Description

PSVA型液晶显示面板 技术领域
本发明涉及显示技术领域，尤其涉及一种PSVA型液晶显示面板。
背景技术
主动式薄膜晶体管液晶显示器(Thin Film Transistor-LCD，TFT-LCD)近年来得到了飞速的发展和广泛的应用。就目前主流市场上的TFT-LCD显示面板而言，可分为三种类型，分别是扭曲向列(Twisted Nematic，TN)或超扭曲向列(Super Twisted Nematic，STN)型，平面转换(In-Plane Switching，IPS)型、及垂直配向(Vertical Alignment，VA)型。其中VA型液晶显示器相对其他种类的液晶显示器具有极高的对比度，在大尺寸显示，如电视等方面具有非常广的应用。
VA型液晶显示面板之所以具有极高的对比度是因为在不加电的暗态时，液晶分子垂直于基板表面排列，不产生任何相位差，漏光极低，暗态亮度很小，根据对比度计算公式暗态亮度越低，则对比度越高。由于VA型液晶显示面板采用垂直转动的液晶，液晶分子双折射率的差异比较大，导致大视角下的色偏(color shift)问题比较严重。为了使VA型液晶显示面板获得更好的广视角特性，改善色偏问题，通常会采取多畴VA技术(Multi-domain VA，MVA)，即将一个子像素划分成多个区域，并使每个区域中的液晶在施加电压后倒伏向不同的方向，从而使各个方向看到的效果趋于平均，一致。实现MVA技术的方法有多种，其中一种方法是将一侧的ITO像素电极处理成“米字型”图案，由于特殊的ITO像素电极图案，其产生的倾斜电场可以诱导不同区域中的液晶分子倒向不同的方向。
随着技术的发展，出现了相关的改进，聚合物稳定垂直配向(polymer-stabilized vertical alignment，PSVA)广视角技术能够使液晶显示面板具有较快的响应时间、及穿透率高等优点，其特点是在配向膜表面形成聚合物突起，从而使液晶分子具有预倾角。一般的PSVA像素结构是在阵列基板上的用于沟道保护的钝化层(Passivation)做完后，将沉积在其上的像素电极做图案化处理。如图1、及图2所示，为现有的一种PSVA型液晶显示面板，包括上基板100和下基板200，上基板100包括第一基板110和平面型的公共电极120，下基板200包括第二基板210、钝化层220、及像素电极230，该像素电极230具有“米字型”图案。然而，由于被处理成 “米字型”图案的像素电极230具有向不同方向延伸的像素电极分支与狭缝间隔的图案，导致其与对侧的上基板110上的公共电极120形成的电场不均，对应于像素电极分支区域的电场明显强于对应于狭缝区域的电场，从而导致像素内出现亮度不均的现象。
为了解决传统PSVA型液晶显示面板存在的问题，人们提出一种新型的PSVA型液晶显示面板，通过在钝化层上形成图案，得到数道沟槽，然后在整个钝化层上覆盖整面的像素电极；相比于传统的PSVA型液晶显示面板，该PSVA型液晶显示面板具有穿透率高、对盒厚(cell gap)和线宽/间隔(Line/Space)不敏感等优势。然而不同的沟槽深度，会获得不同的穿透率，而现在到底什么样的沟槽深度可以使液晶显示面板获得最优的光学表现还尚存疑虑，这将给工艺调试带来不确定性。
发明内容
本发明的目的在于提供一种PSVA型液晶显示面板，具有较高的穿透率，和良好的像素品质，缩小了面板生产的工艺范围，从而可缩短工艺调试的时间，提高产品生产效率。
为实现上述目的，本发明提供一种PSVA型液晶显示面板，包括上基板、与所述上基板相对设置的下基板、及位于所述上基板与下基板之间的液晶层；
所述上基板包括第一基板、及设于所述第一基板上的公共电极；
所述下基板包括第二基板、设于所述第二基板上的薄膜晶体管、设于所述第二基板与薄膜晶体管上的钝化层、以及设于所述钝化层上的像素电极；
所述下基板具有数个像素区域，所述钝化层对应所述数个像素区域内分别形成有相同的图案；所述图案包括向不同方向延伸的数道沟槽；
所述像素电极为厚度均匀、连续不间断的整面电极；所述像素电极整面附着于图案化的钝化层上而随钝化层具有相应的图案；
所述沟槽的深度为
Figure PCTCN2015091804-appb-000001
所述钝化层的厚度≥
Figure PCTCN2015091804-appb-000002
对应于每一个像素区域，该钝化层被划分为四个子区域。
所述图案为“米字型”图案，所述钝化层在每一个像素区域内均包括竖直主干、与所述竖直主干垂直相交的水平主干、以及分别与所述竖直主干或水平主干相连接并分别向四周延伸的数个条状分支；所述数个条状分支相互间隔且与所述竖直主干或水平主干成一夹角；所述沟槽位于相邻两 个条状分支之间。
所述夹角为45度。
所述钝化层的材料为氮化硅。
所述公共电极、及像素电极的材料为ITO。
所述薄膜晶体管包括漏极，所述钝化层对应所述漏极的上方设有过孔，所述像素电极穿过该过孔与所述薄膜晶体管的漏极相连接。
所述过孔与沟槽通过一道灰阶光罩经由黄光制程同时制得。
所述公共电极为厚度均匀、连续不间断的平面型公共电极。
本发明还提供一种PSVA型液晶显示面板，包括上基板、与所述上基板相对设置的下基板、及位于所述上基板与下基板之间的液晶层；
所述上基板包括第一基板、及设于所述第一基板上的公共电极；
所述下基板包括第二基板、设于所述第二基板上的薄膜晶体管、设于所述第二基板与薄膜晶体管上的钝化层、以及设于所述钝化层上的像素电极；
所述下基板具有数个像素区域，所述钝化层对应所述数个像素区域内分别形成有相同的图案；所述图案包括向不同方向延伸的数道沟槽；
所述像素电极为厚度均匀、连续不间断的整面电极；所述像素电极整面附着于图案化的钝化层上而随钝化层具有相应的图案；
所述沟槽的深度为
Figure PCTCN2015091804-appb-000003
其中，所述钝化层的厚度≥
Figure PCTCN2015091804-appb-000004
其中，对应于每一个像素区域，该钝化层被划分为四个子区域；
其中，所述钝化层的材料为氮化硅；
其中，所述公共电极、及像素电极的材料为ITO；
其中，所述薄膜晶体管包括漏极，所述钝化层对应所述漏极的上方设有过孔，所述像素电极穿过该过孔与所述薄膜晶体管的漏极相连接；
其中，所述公共电极为厚度均匀、连续不间断的平面型公共电极。
本发明的有益效果：本发明的PSVA型液晶显示面板，钝化层为图案化的钝化层，该图案化的钝化层具有数道间隔排列的沟槽，像素电极为厚度均匀、连续不间断的整面电极，整面的像素电极通过附着在该图案化的钝化层上而随钝化层具有相应的图案，从而使得液晶面板具有较高的穿透率；并且通过将所述沟槽的深度设置为
Figure PCTCN2015091804-appb-000005
使液晶面板取得了良好的光学表现的同时，缩小了面板生产的工艺范围，缩短了工艺调试的时间，提高了产品生产效率。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本 发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其他有益效果显而易见。
附图中，
图1为一种现有的PSVA型液晶显示面板的立体结构示意图；
图2为图1的PSVA型液晶显示面板的下基板的剖面结构示意图；
图3为本发明的PSVA型液晶显示面板的立体结构示意图；
图4为图3的PSVA型液晶显示面板的下基板的剖面结构示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图3至图4，本发明提供一种PSVA型液晶显示面板，包括上基板1、与所述上基板1相对设置的下基板2、及位于所述上基板1与下基板2之间的液晶层(未图示)；
所述上基板1包括第一基板11、及设于所述第一基板11上的公共电极12；
所述下基板2包括第二基板21、设于所述第二基板21上的薄膜晶体管、设于所述第二基板21与薄膜晶体管上的钝化层22、以及设于所述钝化层22上的像素电极23；
所述下基板2具有数个像素区域，所述钝化层22为图案化的钝化层，所述钝化层22对应所述数个像素区域内分别形成有相同的图案；所述图案包括向不同方向延伸的数道沟槽221；
所述像素电极23为厚度均匀、连续不间断的整面电极；如图3所示，该整面的像素电极23覆盖于图案化的钝化层22上，从而随着钝化层22而具有相应的图案。
在PSVA型液晶显示面板中，沟槽221的深度是一个极为重要的参数，沟槽221的深度极大地影响着液晶倒向及液晶显示面板的光学表现，钝化层22上的沟槽221的深度不同，则对应的液晶面板的穿透率也不同，现有的PSVA型液晶显示面板中并没有对沟槽221的深度作出具体的界定，因此导致可选择的工艺参数及获得的光学表现很随机。本发明中，所述沟槽 221的深度为
Figure PCTCN2015091804-appb-000006
此时液晶的配向效果最好，液晶面板具有最优的光学表现。
具体的，所述钝化层22的厚度≥
Figure PCTCN2015091804-appb-000007
所述沟槽221可根据需要设置为不同的宽度。
具体的，如图3所示，对应于每一个像素区域，该图案化的钝化层22被划分为四个子区域；所述图案化的钝化层22具有“米字型”图案，所述钝化层22在每一个像素区域内均包括竖直主干、与所述竖直主干垂直相交的水平主干、以及分别与所述竖直主干或水平主干相连接并分别向四周延伸的数个条状分支；所述数个条状分支相互间隔且与所述竖直主干或水平主干成一夹角；所述沟槽221位于相邻两个条状分支之间。具体的，所述夹角为45度。
具体的，所述钝化层221的材料为氮化硅。
具体的，所述公共电极12、及像素电极23的材料为透明的ITO。
具体的，如图4所示，所述薄膜晶体管包括一漏极24，所述钝化层22对应所述漏极24的上方设有过孔223，所述像素电极23穿过该过孔223与所述薄膜晶体管的漏极24相连接。
具体的，所述过孔223与沟槽221可通过一道灰阶光罩(Gray Tone Mask，GTM)经由黄光制程同时制得，相比于传统的PSVA型液晶显示面板，并不会增加制程的复杂性。
具体的，如图3所示，所述公共电极12为厚度均匀、连续不间断的平面型公共电极。
综上所述，本发明的PSVA型液晶显示面板，钝化层为图案化的钝化层，该图案化的钝化层具有数道间隔排列的沟槽，像素电极为厚度均匀、连续不间断的整面电极，整面的像素电极通过附着在该图案化的钝化层上而随钝化层具有相应的图案，从而使得液晶面板具有较高的穿透率；并且通过将所述沟槽的深度设置为
Figure PCTCN2015091804-appb-000008
使液晶面板取得了良好的光学表现的同时，缩小了面板生产的工艺范围，缩短了工艺调试的时间，提高了产品生产效率。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。

Claims (14)

  1. 一种PSVA型液晶显示面板，包括上基板、与所述上基板相对设置的下基板、及位于所述上基板与下基板之间的液晶层；
    所述上基板包括第一基板、及设于所述第一基板上的公共电极；
    所述下基板包括第二基板、设于所述第二基板上的薄膜晶体管、设于所述第二基板与薄膜晶体管上的钝化层、以及设于所述钝化层上的像素电极；
    所述下基板具有数个像素区域，所述钝化层对应所述数个像素区域内分别形成有相同的图案；所述图案包括向不同方向延伸的数道沟槽；
    所述像素电极为厚度均匀、连续不间断的整面电极；所述像素电极整面附着于图案化的钝化层上而随钝化层具有相应的图案；
    所述沟槽的深度为
    Figure PCTCN2015091804-appb-100001
  2. 如权利要求1所述的PSVA型液晶显示面板，其中，所述钝化层的厚度
    Figure PCTCN2015091804-appb-100002
  3. 如权利要求1所述的PSVA型液晶显示面板，其中，对应于每一个像素区域，该钝化层被划分为四个子区域。
  4. 如权利要求3所述的PSVA型液晶显示面板，其中，所述图案为“米字型”图案，所述钝化层在每一个像素区域内均包括竖直主干、与所述竖直主干垂直相交的水平主干、以及分别与所述竖直主干或水平主干相连接并分别向四周延伸的数个条状分支；所述数个条状分支相互间隔且与所述竖直主干或水平主干成一夹角；所述沟槽位于相邻两个条状分支之间。
  5. 如权利要求4所述的PSVA型液晶显示面板，其中，所述夹角为45度。
  6. 如权利要求1所述的PSVA型液晶显示面板，其中，所述钝化层的材料为氮化硅。
  7. 如权利要求1所述的PSVA型液晶显示面板，其中，所述公共电极、及像素电极的材料为ITO。
  8. 如权利要求1所述的PSVA型液晶显示面板，其中，所述薄膜晶体管包括漏极，所述钝化层对应所述漏极的上方设有过孔，所述像素电极穿过该过孔与所述薄膜晶体管的漏极相连接。
  9. 如权利要求8所述的PSVA型液晶显示面板，其中，所述过孔与沟槽通过一道灰阶光罩经由黄光制程同时制得。
  10. 如权利要求1所述的PSVA型液晶显示面板，其中，所述公共电极为厚度均匀、连续不间断的平面型公共电极。
  11. 一种PSVA型液晶显示面板，包括上基板、与所述上基板相对设置的下基板、及位于所述上基板与下基板之间的液晶层；
    所述上基板包括第一基板、及设于所述第一基板上的公共电极；
    所述下基板包括第二基板、设于所述第二基板上的薄膜晶体管、设于所述第二基板与薄膜晶体管上的钝化层、以及设于所述钝化层上的像素电极；
    所述下基板具有数个像素区域，所述钝化层对应所述数个像素区域内分别形成有相同的图案；所述图案包括向不同方向延伸的数道沟槽；
    所述像素电极为厚度均匀、连续不间断的整面电极；所述像素电极整面附着于图案化的钝化层上而随钝化层具有相应的图案；
    所述沟槽的深度为
    Figure PCTCN2015091804-appb-100003
    其中，所述钝化层的厚度
    Figure PCTCN2015091804-appb-100004
    其中，对应于每一个像素区域，该钝化层被划分为四个子区域；
    其中，所述钝化层的材料为氮化硅；
    其中，所述公共电极、及像素电极的材料为ITO；
    其中，所述薄膜晶体管包括漏极，所述钝化层对应所述漏极的上方设有过孔，所述像素电极穿过该过孔与所述薄膜晶体管的漏极相连接；
    其中，所述公共电极为厚度均匀、连续不间断的平面型公共电极。
  12. 如权利要求11所述的PSVA型液晶显示面板，其中，所述图案为“米字型”图案，所述钝化层在每一个像素区域内均包括竖直主干、与所述竖直主干垂直相交的水平主干、以及分别与所述竖直主干或水平主干相连接并分别向四周延伸的数个条状分支；所述数个条状分支相互间隔且与所述竖直主干或水平主干成一夹角；所述沟槽位于相邻两个条状分支之间。
  13. 如权利要求12所述的PSVA型液晶显示面板，其中，所述夹角为45度。
  14. 如权利要求11所述的PSVA型液晶显示面板，其中，所述过孔与沟槽通过一道灰阶光罩经由黄光制程同时制得。
PCT/CN2015/091804 2015-08-31 2015-10-13 Psva型液晶显示面板 Ceased WO2017035915A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US14/787,766 US9817280B2 (en) 2015-08-31 2015-10-13 PSVA liquid crystal display panel comprising a pixel electrode which is patterned with a plurality of trenches corresponding to a pattern of a passivation layer

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201510548278.7A CN105068325A (zh) 2015-08-31 2015-08-31 Psva型液晶显示面板
CN201510548278.7 2015-08-31

Publications (1)

Publication Number Publication Date
WO2017035915A1 true WO2017035915A1 (zh) 2017-03-09

Family

ID=54497725

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2015/091804 Ceased WO2017035915A1 (zh) 2015-08-31 2015-10-13 Psva型液晶显示面板

Country Status (3)

Country Link
US (1) US9817280B2 (zh)
CN (1) CN105068325A (zh)
WO (1) WO2017035915A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105487316A (zh) * 2016-01-19 2016-04-13 深圳市华星光电技术有限公司 液晶显示面板及液晶显示装置
CN107170763A (zh) * 2017-06-20 2017-09-15 深圳市华星光电技术有限公司 一种阵列基板及其制作方法和液晶显示面板
CN107340656A (zh) * 2017-09-08 2017-11-10 深圳市华星光电技术有限公司 像素电极及制作方法、显示面板
CN109856879A (zh) * 2019-04-09 2019-06-07 惠科股份有限公司 像素结构及其制作方法和显示面板

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050070380A (ko) * 2003-12-30 2005-07-07 엘지.필립스 엘시디 주식회사 멀티도메인 수직배향 모드 액정표시장치 및 그의 제조방법
CN102236220A (zh) * 2011-07-07 2011-11-09 深圳市华星光电技术有限公司 像素电极结构
CN102759824A (zh) * 2011-04-22 2012-10-31 株式会社日立显示器 液晶显示装置
CN102890368A (zh) * 2011-07-21 2013-01-23 株式会社日本显示器东 液晶显示装置
CN103744243A (zh) * 2013-12-31 2014-04-23 南京中电熊猫液晶显示科技有限公司 一种液晶显示面板及其制造方法
CN104698704A (zh) * 2013-12-09 2015-06-10 株式会社日本显示器 液晶显示装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3407707B2 (ja) * 1999-12-20 2003-05-19 日本電気株式会社 垂直配向型マルチドメイン液晶表示装置
EP1394597B1 (en) * 2002-09-02 2011-03-23 Samsung Electronics Co., Ltd. Contact structure of semiconductor device, manufacturing method thereof, thin film transistor array panel including contact structure, and manufacturing method thereof
KR20080067406A (ko) * 2007-01-16 2008-07-21 삼성전자주식회사 박막 트랜지스터 표시판
KR20090059957A (ko) * 2007-12-07 2009-06-11 삼성전자주식회사 액정 표시 장치
KR20120124527A (ko) * 2011-05-04 2012-11-14 삼성디스플레이 주식회사 표시 장치 및 표시 장치의 제조 방법
CN102402042A (zh) * 2011-11-02 2012-04-04 深圳市华星光电技术有限公司 液晶显示装置及其制造方法
CN104503155A (zh) * 2014-11-17 2015-04-08 深圳市华星光电技术有限公司 液晶显示像素结构及其制作方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050070380A (ko) * 2003-12-30 2005-07-07 엘지.필립스 엘시디 주식회사 멀티도메인 수직배향 모드 액정표시장치 및 그의 제조방법
CN102759824A (zh) * 2011-04-22 2012-10-31 株式会社日立显示器 液晶显示装置
CN102236220A (zh) * 2011-07-07 2011-11-09 深圳市华星光电技术有限公司 像素电极结构
CN102890368A (zh) * 2011-07-21 2013-01-23 株式会社日本显示器东 液晶显示装置
CN104698704A (zh) * 2013-12-09 2015-06-10 株式会社日本显示器 液晶显示装置
CN103744243A (zh) * 2013-12-31 2014-04-23 南京中电熊猫液晶显示科技有限公司 一种液晶显示面板及其制造方法

Also Published As

Publication number Publication date
CN105068325A (zh) 2015-11-18
US9817280B2 (en) 2017-11-14
US20170192311A1 (en) 2017-07-06

Similar Documents

Publication Publication Date Title
CN104777693B (zh) 高穿透率psva型液晶显示面板及其制作方法
KR100887669B1 (ko) 액정표시장치 및 그 제조방법
KR100313949B1 (ko) 멀티도메인액정표시소자
CN102129142B (zh) 横向电场模式液晶显示装置
JP5881057B2 (ja) 横電界方式の液晶表示装置及びその製造方法
KR101549962B1 (ko) 액정 표시 장치
JP2020528166A (ja) 画素電極及び液晶表示パネル
WO2016206155A1 (zh) 像素电极及液晶显示面板
KR20100030094A (ko) 액정 표시 장치
US12158668B2 (en) Liquid crystal display panel
CN102692770A (zh) 液晶显示装置
WO2017035912A1 (zh) Hva型液晶显示面板
CN103226271A (zh) 液晶显示器
KR20120083162A (ko) 액정 표시 장치
WO2016176896A1 (zh) 像素电极及液晶显示面板
US20170322456A1 (en) Psva liquid crystal display panel and manufacture method thereof
WO2017063231A1 (zh) 液晶显示面板
WO2016149974A1 (zh) 高穿透率va型液晶显示面板及其制作方法
CN111338135B (zh) 显示面板及显示装置
US9874790B2 (en) Pixel electrode and liquid crystal display panel
KR100835112B1 (ko) 프린지 필드 스위칭 액정 표시 소자
WO2017035915A1 (zh) Psva型液晶显示面板
KR102363825B1 (ko) 액정 표시 장치 및 그 제조 방법
CN111208659B (zh) 液晶显示面板及显示装置
KR102078810B1 (ko) 액정 표시 장치

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 14787766

Country of ref document: US

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 15902722

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 15902722

Country of ref document: EP

Kind code of ref document: A1