WO2017023301A1 - Photodétecteur à avalanche ge/si latéral - Google Patents

Photodétecteur à avalanche ge/si latéral Download PDF

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Publication number
WO2017023301A1
WO2017023301A1 PCT/US2015/043631 US2015043631W WO2017023301A1 WO 2017023301 A1 WO2017023301 A1 WO 2017023301A1 US 2015043631 W US2015043631 W US 2015043631W WO 2017023301 A1 WO2017023301 A1 WO 2017023301A1
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Prior art keywords
region
germanium
doped region
avalanche photodiode
doping level
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PCT/US2015/043631
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English (en)
Inventor
Ari Novack
Yang Liu
Yi Zhang
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Coriant Advanced Technology, LLC
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Priority to PCT/US2015/043631 priority Critical patent/WO2017023301A1/fr
Publication of WO2017023301A1 publication Critical patent/WO2017023301A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
    • H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions

Definitions

  • the invention relates to photodetectors in general and particularly to an avalanche photodetector.
  • Avalanche photodetectors provide higher sensitivity than p-i-n photodetectors because of the internal gain from avalanche multiplication. APDs are useful in optical receivers for a number of applications. Due to the uncertainties of the total number of impact ionizations, there is amplitude noise on the avalanche gain. The noise is determined by avalanche multiplication material, characterized by the ionization rate ratio between electrons and holes, k. Similar ionization rate between electrons and holes, i.e., k ⁇ l, corresponds to high noise, while low ionization rate between electrons and holes, i.e., k ⁇ 0 corresponds to low noise.
  • Silicon is transparent to the a set wavelengths used in optical fiber
  • germanium has a k close to 1, making it a noisy avalanche material.
  • silicon has a very small k ⁇ 0.1, which is preferable for avalanche.
  • prior art APDs usually have separate absorption and multiplication regions, as shown in FIG. 1.
  • the electric field in different layers is illustrated in FIG. 2.
  • the electric field needs to be high enough to drive the photo-generated carriers at their drift saturation velocity, while low enough to avoid avalanche multiplication, which sets it in the 10 to 100 kV/cm range.
  • the field needs to be high enough, greater than 300 kV/cm, for efficient multiplication.
  • the conventional prior art APD has a complicated layer structure, which requires multiple epitaxy and doping steps. Typically this type of geometry would be used for vertical incidence detection where light is traveling perpendicular to the plane of the chip. However, integrated optics require waveguide-coupled detectors in which the light is travelling in the plane of the chip. It is difficult to convert the conventional APD structure to work as a waveguide coupled device due to its numerous epitaxial steps. [0006] There is a need for improved avalanche photodiode device structures that allow simpler and less costly fabrication.
  • the invention features a germanium (Ge) avalanche photodiode, comprising: a substrate having a silicon device layer on a surface thereof; a plurality of regions having different doping levels in the silicon device layer, the plurality of regions having different doping levels comprising, in order, a p ++ doped region, a first region having a modest doping level, a p+ doped region, a second region having a modest doping level, and an n ++ doped region; a germanium body adjacent the silicon device layer; a first electrical terminal in electrical communication with the p ++ doped region; and a second electrical terminal in electrical communication with the n ++ doped region.
  • a germanium (Ge) avalanche photodiode comprising: a substrate having a silicon device layer on a surface thereof; a plurality of regions having different doping levels in the silicon device layer, the plurality of regions having different doping levels comprising, in order, a p ++ doped region,
  • the substrate is a semiconductor wafer.
  • the semiconductor wafer is a silicon-on-insulator wafer.
  • the first region having a modest doping level has doping that is less than either the p + doped region or the p ++ doped region.
  • the second region having a modest doping level has doping that is lower than either the p + doped region or the p ++ doped region.
  • the germanium body is in electrical contact with at least one of the p ++ doped region, the first region having a modest doping level, and the p+ doped region.
  • the first region having a modest doping level is an absorption region.
  • the second region having a modest doping level is an avalanche region.
  • the germanium body has a non-planar shape.
  • the germanium avalanche photodiode further comprises an oxide layer deposited over the germanium body.
  • the invention relates to an improved germanium avalanche photodiode including a semiconductor wafer having a silicon device layer on a surface thereof, a plurality of regions having different doping levels laterally disposed in the silicon device layer, and a germanium body; wherein the improvement comprises: the plurality of regions having different doping levels laterally disposed in the silicon device layer comprising, in order, a p ++ doped region, a first region having a modest doping level, a p+ doped region, a second region having a modest doping level, and an n ++ doped region; the a germanium body adjacent the silicon device layer; a first electrical terminal in electrical communication with the p ++ doped region; and a second electrical terminal in electrical communication with the n ++ doped region.
  • the first region having a modest doping level has doping that is lower than either the p ++ doped region or the p + doped region.
  • the second region having a modest doping level has doping that is lower than either the p ++ doped region or the p + doped region.
  • the germanium body is in electrical contact with at least one of the p ++ doped region, the first region having a modest doping level, and the p+ doped region.
  • the invention relates to a method of making a germanium avalanche photodiode.
  • the method comprises the steps of: providing a
  • semiconductor wafer having a silicon device layer on a surface thereof; creating a plurality of regions having different doping levels in the silicon device layer, the plurality of regions having different doping levels comprising, in order, a p ++ doped region, a first region having a modest doping level, a p+ doped region, a second region having a modest doping level, and an n ++ doped region; depositing a germanium body adjacent the silicon device layer; providing a first electrical terminal in electrical communication with the p ++ doped region; and providing a second electrical terminal in electrical communication with the n doped region.
  • the method of making a germanium avalanche photodiode further comprises the step of depositing an oxide layer over the germanium body.
  • the semiconductor wafer is a silicon-on-insulator wafer.
  • the germanium body has a non-planar shape.
  • the germanium body is in electrical contact with at least one of the p doped region, the first region having a modest doping level, and the p+ doped region.
  • the first region having a modest doping level has doping that is lower by approximately one order of magnitude than either the p ++ doped region or the p + doped region.
  • the second region having a modest doping level has doping that is lower by approximately one order of magnitude than either the p ++ doped region or the p + doped region.
  • the invention relates to a method of operating a germanium avalanche photodiode, the germanium avalanche photodiode comprising a semiconductor wafer having a silicon device layer on a surface thereof; a plurality of regions having different doping levels in the silicon device layer, the plurality of regions having different doping levels comprising, in order, a p ++ doped region, a first region having a modest doping level, a p+ doped region, a second region having a modest doping level, and an n ++ doped region; a germanium body adjacent the silicon device layer; a first electrical terminal in electrical communication with the p ++ doped region; and a second electrical terminal in electrical communication with the n ++ doped region; the method comprising the steps of:
  • the electrical signal is amplified by an avalanche process.
  • the substrate is a silicon-on-insulator wafer.
  • the germanium body has a non-planar shape.
  • the germanium body is in electrical contact with at least one of the p ++ doped region, the first region having a modest doping level, and the p+ doped region.
  • the first region having a modest doping level has doping that is lower by approximately one order of magnitude than either the p ++ doped region or the p + doped region.
  • the second region having a modest doping level has doping that is lower by approximately one order of magnitude than either the p doped or the p + doped region.
  • the invention features a germanium avalanche photodiode, comprising: a substrate having a surface; a germanium body adjacent the surface; a first electrical terminal in electrical communication with the germanium body by way of a first surface region of the surface; and a second electrical terminal in electrical communication with the germanium body by way of a second surface region of the surface.
  • the substrate is a semiconductor wafer.
  • the semiconductor wafer is a silicon-on-insulator wafer that has a silicon device layer on the surface thereof.
  • a plurality of regions having different doping levels in the silicon device layer comprise, in order, a p ++ doped region, a first region having a modest doping level, a p+ doped region, a second region having a modest doping level, and an n ++ doped region.
  • the first region having a modest doping level has doping that is lower by approximately one order of magnitude than either the p ++ doped region or the p + doped region.
  • the second region having a modest doping level has doping that is lower by approximately one order of magnitude than either the p ++ doped region or the p + doped region.
  • the germanium body is in electrical contact with at least one of the p ++ doped region, the first region having a modest doping level, and the p+ doped region.
  • the first region having a modest doping level is an absorption region.
  • the second region having a modest doping level is an avalanche region.
  • the first surface region of the surface is the p ++ doped region of the silicon device layer.
  • the second surface region of the surface is the n ++ doped region of the silicon device layer.
  • the germanium body has a non-planar shape.
  • the germanium avalanche photodiode further comprises an oxide layer deposited over the germanium body.
  • the invention relates to a method of operating a germanium avalanche photodiode, said germanium avalanche photodiode comprising a substrate having a surface, a germanium body adjacent said surface, a first electrical terminal in electrical communication with said germanium body by way of a first surface region of said surface, and a second electrical terminal in electrical communication with said germanium body by way of a second surface region of said surface; the method comprising the steps of: illuminating said germanium body with electromagnetic radiation having an intensity; and measuring an electrical signal at said first and second electrical terminals, said electrical signal representative of said intensity of said electromagnetic radiation.
  • FIG. 1 is a schematic diagram of a conventional prior art vertical Ge/Si APD.
  • FIG. 2 is a graph showing the electrical field strength in different layers of an
  • FIG. 3 is a cross sectional diagram of a lateral Ge/Si APD according to principles of the invention.
  • FIG. 4 is a graph of observed photocurrent current vs. voltage and dark current vs. voltage for a sample device constructed and operated according to principles of the invention.
  • FIG. 5 is a graph of observed S 12 parameter vs. frequency for a device constructed and operated according to principles of the invention.
  • FIG. 6 is a cross sectional diagram of an alternative embodiment of a lateral Ge
  • FIG. 3 is a cross sectional diagram of a lateral Ge/Si APD according to principles of the invention.
  • a silicon-on-insulator wafer is used to provide a silicon substrate 302.
  • a buried oxide (BOX) layer 304 is present in contact with the silicon substrate.
  • a silicon device layer 320 is present in contact with the BOX 304 layer.
  • a p ++ doped region 321 is provided, as illustrated in FIG. 3.
  • Adjacent the p ++ doped region 321 is a region 322 having a modest doping level.
  • In the silicon device layer 320 adjacent the region 322 is a p+ doped region 323.
  • the silicon device layer 320 adjacent the p+ doped region 323 is a region 324 having a modest doping level.
  • an n doped region 325 In the silicon device layer 320 adjacent the region 324 is an n doped region 325.
  • the p+ doping is of the order of 1E15 to 1E17 per cubic centimeter. In some embodiments, both p++ and n++ doping are greater 1E18 per cubic centimeter.
  • the device of the invention can be fabricated on a substrate, such as a semiconductor wafer, or a substrate made from other materials that are not semiconductors, such as quartz, aluminum oxide, sapphire, and the like.
  • the germanium body 306 is deposited adjacent the silicon device layer 320, for example by epitaxy after all of the doped regions in the silicon device layer 320 are completed.
  • the region 321 is in electrical contact with the germanium body 306.
  • the region 322 is in contact electrical with the germanium body 306.
  • the region 323 is in electrical contact with the germanium body 306.
  • the germanium body 306 is not in mechanical contact with either or both of regions 321 and 323. The discussion of how the germanium body 306 may be fabricated is described in further detail in co-pending U.S. patent application Serial No. 14/644, 122.
  • the regions having a modest doping level may have additional doping added simply as an artifact of the doping of nearby, or adjacent, regions. This additional doping may come about by inaccuracies in locating a dopant deposition or implantation or by diffusion of dopant during an annealing, activation or heat treatment step in the course of ordinary semiconductor processing.
  • a region having a modest doping level can have an effective doping that is lower than either the p ++ doped region 321 or the p + doped region 323.
  • a region having a modest doping level can have an effective doping that is lower by approximately one order of magnitude than either the p ++ doped region 321 or the p + doped region 323.
  • the p-type dopant is boron (B).
  • the n-type dopants are one or more of phosphorus (P), arsenic (As) and antimony (Sb).
  • An oxide layer 308 is provided that covers the silicon device layer 320 and the germanium body 306. There are no metal contacts made to the germanium body 306. The electrical contacts to the germanium body 306 are made by way of the p ++ doped region 321 on one side and by way of the p + doped region 323, the region 324 and the n ++ doped region 325 on the other side. A voltage is applied to the device such that the electrons that are generated in the Ge body are allowed to move into the region 322, and then to the avalanche region 324, while the holes that are generated in the Ge body are allowed to move to the p++ region 321.
  • Aluminum conductors 310 and 312 are provided to connect the p ++ doped region 321 with a p terminal 311 and the n ++ doped region 325 with an n terminal 313, respectively, so that the electrical signal generated in the APD can be observed or used.
  • the conductors 310 and 312 can be fabricated using metals other than aluminum, for example, Cu, W or other common conductor metals.
  • the device shown in FIG. 3 keeps separate the absorption region (in the germanium) and the multiplication region (in the silicon device layer) for low noise APD behavior. Moreover, the germanium crystal quality is preserved as produced by epitaxy, free from degradation which would be caused by ion implantation or metal contacting.
  • the growth rate is different at different crystal orientations. Growth in the ⁇ 31 1> crystallographic direction may be slower than growth in the ⁇ 100> crystallographic direction, thus a triangular (or non-planar) shape may be formed.
  • the ⁇ > notation is used to identify a family of equivalent directions (i.e., ⁇ 100> includes the [100] direction, the [010] direction, the [001] direction and their opposite directions, such as [-100]).
  • the steps used to fabricate the device are to first produce all of the regions 321,
  • the Ge body 306 can be deposited in an aperture produced in the oxide layer 308.
  • One or more layers can be deposited over the Ge body to provide mechanical protection and/or optical coatings, such as anti-reflection coatings.
  • the metallization can then be applied.
  • FIG. 6 is a cross sectional diagram of an alternative embodiment of a lateral Ge
  • a substrate 602 is provided.
  • a silicon device layer 620 is present in contact with the substrate 602.
  • a p ++ doped region 621 is provided, as illustrated in FIG. 6.
  • Adjacent the p ++ doped region 621 is a region 622 in which a modest doping level is introduced into the silicon device layer.
  • a p+ doped region 623 is a region 624 in which a modest doping level is introduced into the silicon device layer.
  • the device of the invention can be fabricated on a substrate, such as a semiconductor wafer, or a substrate made from other materials that are not semiconductors, such as quartz, aluminum oxide, sapphire, and the like.
  • the germanium body 606 is deposited adjacent the silicon device layer 620, for example by epitaxy after all of the doped regions in the silicon device layer 620 are completed.
  • the region 621 is in electrical contact with the germanium body 606.
  • the region 622 is in contact electrical with the germanium body 606.
  • the region 623 is in electrical contact with the germanium body 606.
  • the germanium body 606 is not in mechanical contact with either or both of regions 621 and 623.
  • the discussion of how the germanium body 606 may be fabricated is described in further detail in U.S. patent application Serial No. 14/644, 122.
  • a modest doping level is intended to denote a level of doping that is present in the silicon device layer 620 before any additional doping is deliberately added during processing.
  • the regions having a modest doping level may in fact have additional doping added simply as an artifact of the doping of nearby, or adjacent, regions. This additional doping may come about by inaccuracies in locating a dopant deposition or implantation or by diffusion of dopant during an annealing, activation or heat treatment step in the course of ordinary semiconductor processing.
  • a region having a modest doping level can have doping that is lower than either the p ++ doped region 621 or the p + doped region 623.
  • the p-type dopant is boron (B).
  • the n-type dopants are one or more of phosphorus (P), arsenic (As) and antimony (Sb).
  • the n++, p+ or p++ regions can be counter-doped such that an n-type dopant is used in a majority p-type region or a p-type dopant is used in a majority n-type region.
  • An oxide layer 608 is provided that covers the silicon device layer 620 and the germanium body 606. There are no metal contacts made to the germanium body 606. The electrical contacts to the germanium body 606 are made by way of the p ++ doped region 621 on one side and by way of the p doped region 623, the region 624 and the n doped region 625 on the other side. A voltage is applied to the device such that the electrons that are generated in the Ge body are allowed to move into the region 622, and then to the avalanche region 624, while the holes that are generated in the Ge body are allowed to move to the p++ region 621.
  • Aluminum conductors 610 and 612 are provided to connect the p ++ doped region 621 with a p terminal 611 and the n ++ doped region 625 with an n terminal 613, respectively, so that the electrical signal generated in the APD can be observed or used.
  • the conductors 610 and 612 can be fabricated using metals other than aluminum, for example, Cu, W or other common conductor metals.
  • the device shown in FIG. 6 keeps separate the absorption region (in the germanium) and the multiplication region (in the silicon device layer) for low noise APD behavior. Moreover, the germanium crystal quality is preserved as produced by epitaxy, free from degradation which would be caused by ion implantation or metal contacting.
  • the steps used to fabricate the device are to first produce all of the regions 621,
  • the Ge body 606 can be deposited in an aperture produced in the oxide layer 608.
  • One or more layers can be deposited over the Ge body to provide mechanical protection and/or optical coatings, such as anti-reflection coatings.
  • the metallization can then be applied.
  • the Ge body has one or more metal contacts that may conduct current.
  • the Ge body is doped.
  • the silicon device layer is partially etched in selected regions.
  • the Ge body contains, at least partially, a compound containing at least two of silicon, germanium, carbon and tin.
  • the Ge body is grown using liquid phase epitaxy.
  • the doping regions are rounded to avoid sharp corners.
  • the Ge body is rounded to avoid sharp corners.
  • the Ge body is grown on partially etched silicon.
  • light is incident on the detector from multiple sides.
  • the germanium is grown using any convenient chemical vapor deposition technique, including, by way of example, ultra high vacuum CVD (UHV-CVD), metallo-organic CVD (MOCVD), plasma enhanced CVD (PEVCD), atmospheric pressure CVD (APCVD), low pressure CVD (LPCVD), rapid thermal; CVD (RTCVD)and reduced pressure CVD (RPCVD).
  • UHV-CVD ultra high vacuum CVD
  • MOCVD metalo-organic CVD
  • PEVCD plasma enhanced CVD
  • APCVD atmospheric pressure CVD
  • LPCVD low pressure CVD
  • RTCVD rapid thermal
  • CVD RTCVD
  • RPCVD reduced pressure CVD
  • the silicon substrate is doped prior to device fabrication.
  • the doped regions comprise multiple implants and/or diffusions.
  • the doped regions vary in doping intensity, for example, being linearly doped.
  • the doping concentration varies as a function of depth in the silicon.
  • the dopants are counter- doped using an alternative species.
  • the Ge body is single crystal or polycrystalline.
  • the Ge body has a buffer layer (e.g. SiGe, amorphous Ge, SiN) between the silicon device layer and the main Ge body.
  • the device will be operated by sending an optical signal to the device's input port.
  • a bias voltage will then be applied across the electrical ports.
  • a larger voltage will result in a larger responsivity and a higher gain.
  • Electrical controls can be used to operate the avalanche detector at a voltage chosen to maximize performance. The chosen regime may also be a function of the optical input power. Lower input power generally requires a higher gain. The current that flows out of the terminals is then detected.
  • the device may also be operated in "Geiger mode", in which the voltage is intentionally increased to be in the breakdown regime. In this mode of operation, a single photon will trigger a self-sustaining current that must then be quenched by some type of circuitry to reset the detector. This mode is efficient at detecting single photons.
  • the avalanche mechanism is sensitive to temperature.
  • a thermal control may be used with the detector.
  • the substrate on which the detector sits may be placed onto a thermo-electric cooler.
  • a heater may be integrated into the detector structure for maximally efficient thermal control.
  • Some embodiments may utilize a heater or a thermoelectric cooler in order to adjust the bandgap energy of the photodetector absorption region.
  • Some embodiments may utilize this heater or thermoelectric cooler in order to control the absorption of the photodetector as a function of input wavelength.
  • this heater or thermoelectric cooler in order to stabilize the gain or breakdown voltage of the photodetector.
  • Some embodiments may include both a cooler and a heater, which may be operated alone or together, so as to control a range of operation of the device (e.g., the heater operates if the device temperature falls below a lower threshold, and the cooler operates if the device temperature rises above an upper threshold, with the other of the heater or the cooler turned off when the temperature is above the lower threshold and below the upper threshold, respectively).
  • the heater operates if the device temperature falls below a lower threshold
  • the cooler operates if the device temperature rises above an upper threshold, with the other of the heater or the cooler turned off when the temperature is above the lower threshold and below the upper threshold, respectively.
  • FIG. 4 is a graph of observed photocurrent current vs. voltage and dark current vs. voltage for a sample device that was constructed and operated.
  • the current vs. voltage curves 410, 420 and 430 are shown.
  • the device that produced the curve 420 clearly generated photocurrent in the avalanche photodiode's reverse bias regime. Avalanche gain is apparent in curve 420 near -30 V.
  • the dark current vs. voltage curve 410 shows that this device has relatively low dark current relative to the photocurrent with less than 1 ⁇ of dark current at -30 V.
  • FIG. 5 is a graph of an observed S 12 parameter vs. frequency for a device constructed and operated according to principles of the invention.
  • the S 12 is a measure of the electro-optic frequency response of the photodetector.
  • the horizontal line 510 indicates normalized response power I
  • the horizontal line 530 indicates a response power that would be reduced from I by -3dB.
  • the observed curve 520 shows that the -3dB frequency is greater than one GHz (e.g., in the vicinity of 1.6 GHz for the specific device that was measured).
  • optical communication channel is intended to denote a single optical channel, such as light that can carry information using a specific carrier wavelength in a wavelength division multiplexed (WDM) system.
  • WDM wavelength division multiplexed
  • optical carrier is intended to denote a medium or a structure through which any number of optical signals including WDM signals can propagate, which by way of example can include gases such as air, a void such as a vacuum or extraterrestrial space, and structures such as optical fibers and optical waveguides.

Abstract

Un photodétecteur à avalanche (APD) Ge/Si latéral construit sur une tranche de silicium-sur-isolant comprend une couche de dispositif en silicium présentant des régions qui sont dopées afin de générer un champ électrique latéral et une région d'avalanche. Une région ayant un faible niveau de dopage est en contact avec un corps de germanium. Il n'y a pas de contacts métalliques dans le corps de germanium. Les contacts électriques avec le corps de germanium sont effectués à l'aide des régions dopées dans la couche de dispositif en silicium.
PCT/US2015/043631 2015-08-04 2015-08-04 Photodétecteur à avalanche ge/si latéral WO2017023301A1 (fr)

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Cited By (8)

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CN108447877A (zh) * 2018-05-16 2018-08-24 广东省半导体产业技术研究院 平面型光敏器件及其制作方法
WO2019108404A1 (fr) 2017-11-28 2019-06-06 Luxtera, Inc. Procédé et système pour une photodiode à avalanche à champ focalisé
JP2020053444A (ja) * 2018-09-25 2020-04-02 沖電気工業株式会社 半導体受光素子、及び光電融合モジュール
CN111952399A (zh) * 2020-08-20 2020-11-17 中国科学院半导体研究所 一种波导耦合的光电探测器及其制备方法
JP2021052035A (ja) * 2019-09-20 2021-04-01 沖電気工業株式会社 面受光型の半導体受光素子、及びその製造方法
US11309447B2 (en) * 2019-12-26 2022-04-19 Globalfoundries U.S. Inc. Separate absorption charge and multiplication avalanche photodiode structure and method of making such a structure
US11508868B2 (en) 2017-05-15 2022-11-22 Rockley Photonics Limited Avalanche photodiode structure
WO2023125283A1 (fr) * 2021-12-29 2023-07-06 武汉光谷信息光电子创新中心有限公司 Photodétecteur à avalanche et son procédé de préparation

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