WO2016209386A1 - Resurfaceable contact pad redistribution interposer for semiconductor probing - Google Patents
Resurfaceable contact pad redistribution interposer for semiconductor probing Download PDFInfo
- Publication number
- WO2016209386A1 WO2016209386A1 PCT/US2016/031751 US2016031751W WO2016209386A1 WO 2016209386 A1 WO2016209386 A1 WO 2016209386A1 US 2016031751 W US2016031751 W US 2016031751W WO 2016209386 A1 WO2016209386 A1 WO 2016209386A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- pads
- mask
- epoxy
- electro
- temporary
- Prior art date
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
- G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
- G01R1/07364—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card with provisions for altering position, number or connection of probe tips; Adapting to differences in pitch
- G01R1/07378—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card with provisions for altering position, number or connection of probe tips; Adapting to differences in pitch using an intermediate adapter, e.g. space transformers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
Definitions
- the present invention relates to a redistribution silicon or organic interpuser. These redistribution interposers electrically connect a wafer semi-conductor to a probe card where it is necessary to convert the course pad arrangement of one with a fine pad arrangement of the other through the use of an interposer board.
- the present invention relates to provide a method and structure for a resurfaceablc contact pad using an epoxy to encapsulate contact pads such that the epoxy and encapsulated contact pads are coplanar on a silicon redistribution interposer. .
- Signal integrity probing requires good electrical connections.
- problems associated with extended use thai may prevent good electrical connections from being formed with the contact surface to be probed.
- the contact surface that is the subject of the probing may become damaged by the probe needles over extended use. This damage from extended use will make it difficult if not impossible to affect a good probing contact and thus impair a good electrical connection, wherein the contact surfaces may need costly or time-consuming repairs or replacements.
- the present invention provides a method and structure for providing a rcsurfaccable contact pad using an epoxy to encapsulate contact pads such that the epoxy and encapsulated contact pads are coplanar on a silicon redistribution interposer.
- These redistribution interposers electrically connect a wafer semi-conductor to a probe card where it is necessary to convert the course pad arrangement of one with a fine pad arrangement of the other through the use of an interposer board.
- the present invention relates to an apparatus and a method for creating resurfaceable contact pads.
- the contact pads may be resurfaced one or multiple times with an abrasive sanding operation to recreate a coplanar surface should any contact pad surfaces become damaged, allowing tor a more cost-effective repair.
- FIG 1 illustrates an exploded sectional view of the present invention in which the redistribution silicon board contains a coplanar surface of connecting pads encapsulated with an epoxy;
- FIG 2 shows a section view of the present invention where the redistribution interposer' s surface contains connecting pads that are equally coplanar with an epoxy that encapsulates the connecting pads.
- FIG. 1 illustrates the redistribution silicon .
- ceramic or organic interposer board 3 of the present invention with top connecting lands or pads 7 in which the pads 7 are lengthened along the z axis by either an electro-plating or electro-less plating operation or by thermal-sonic gold ball bonding.
- a suitable temporary mask of suitable thickness typically ranging from .0005" to .005" thick, such as a photo image-able plating mask is formed over the top surface of the interposer 3 exposing just the pads to be plated 7
- the photo mask can be hot -roll laminated or spun on with a liquid resist, process known in the semiconductor industry .
- an electro-plating or electro-less plating operation of a suitable wear resistant low contact resistant preferably noble metal, is performed to build the pads up to the desired height forming a column in a range of 5 micros to 25 microns .
- the temporary mask can be removed and an optional permanent epoxy is formed around the plated columns, epoxy formed by potted process or spin coating process.
- a photo image-able permanent epoxy can be used, coated or potted and being photo imagcablc the excess epoxy is developed away as known in the art .
- the epoxy Once the epoxy is formed around the plated columns 1 they can both be sanded or lapped in the same plane to form a coplanar surface with a sanding process or lapping process as shown in the art which can be re-sanded multiple times in the future after extended use or damage to the connecting pads, each time reducing the overall height of the column 7 to reform a fiat coplanar pad.
- An alternative to the electroplating process would be thermal sonic or compression bonding of a suitable metal a compression bonder or a thermal sonic ball
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Leads Or Probes (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
The present invention relates to a method and an apparatus for a resurfaceable contact pad that uses; an epoxy to encapsulate contact pads so that the epoxy and encapsulated contact pads are coplanar on a silicon redistribution interposer. These redistribution interposers electrically connect a wafer semi-conductor to a probe card where it is necessary to convert the course pad arrangement of one with a fine pad arrangement of the other through the use of an interposer board. The present invention relates to an apparatus and a method creates resurfaceable contact pads which may be resurfaced one or multiple times with an abrasive sanding operation to recreate a coplanar surface should any contact pad surfaces become damaged, allowing for a more cost- effective repair.
Description
RESURFACEABLE CONTACT PAD REDISTRIBUTION INTERPOSER FOR SEMICONDUCTOR PROBING
BACKGROUND
1. Field
The present invention relates to a redistribution silicon or organic interpuser. These redistribution interposers electrically connect a wafer semi-conductor to a probe card where it is necessary to convert the course pad arrangement of one with a fine pad arrangement of the other through the use of an interposer board. In particular the present invention relates to provide a method and structure for a resurfaceablc contact pad using an epoxy to encapsulate contact pads such that the epoxy and encapsulated contact pads are coplanar on a silicon redistribution interposer. .
Signal integrity probing requires good electrical connections. However, there are problems associated with extended use thai may prevent good electrical connections from being formed with the contact surface to be probed. The contact surface that is the subject of the probing may become damaged by the probe needles over extended use. This damage from extended use will make it difficult if not impossible to affect a good probing contact and thus impair a good electrical connection, wherein the contact surfaces may need costly or time-consuming repairs or replacements.
Summary
The present invention provides a method and structure for providing a rcsurfaccable contact pad using an epoxy to encapsulate contact pads such that the epoxy and encapsulated contact pads are coplanar on a silicon redistribution interposer. These redistribution interposers electrically connect a wafer semi-conductor to a probe card where it is necessary to convert the course pad arrangement of one with a fine pad arrangement of the other through the use of an interposer board. In particular, the present invention relates to an apparatus and a method for creating resurfaceable contact pads. The contact pads may be resurfaced one or multiple times with an abrasive sanding operation to recreate a coplanar surface should any contact pad surfaces become damaged, allowing tor a more cost-effective repair.
Brief Description of the Drawings
FIG 1 illustrates an exploded sectional view of the present invention in which the redistribution silicon board contains a coplanar surface of connecting pads encapsulated with an epoxy; and
FIG 2 shows a section view of the present invention where the redistribution interposer' s surface contains connecting pads that are equally coplanar with an epoxy that encapsulates the connecting pads.
Detailed Description of the Preferred Embodiment(s)
Referring now to the drawings of FIGS 1-2, FIG. 1 illustrates the redistribution silicon . ceramic or organic interposer board 3 of the present invention with top connecting lands or pads 7 in which the pads 7 are lengthened along the z axis by either an electro-plating or electro-less plating operation or by thermal-sonic gold ball bonding. In the case of lengthening by electroplating, a suitable temporary mask, of suitable thickness typically ranging from .0005" to .005" thick, such as a photo image-able plating mask is formed over the top surface of the interposer 3 exposing just the pads to be plated 7 The photo mask can be hot -roll laminated or spun on with a liquid resist, process known in the semiconductor industry . Then an electro-plating or electro-less plating operation, of a suitable wear resistant low contact resistant preferably noble metal, is performed to build the pads up to the desired height forming a column in a range of 5 micros to 25 microns . At this point the temporary mask can be removed and an optional permanent epoxy is formed around the plated columns, epoxy formed by potted process or spin coating process. . As an alternative to the temporary photo image-able mask a photo image-able permanent epoxy can be used, coated or potted and being photo imagcablc the excess epoxy is developed away as known in the art . Once the epoxy is formed around the plated columns 1 they can both be sanded or lapped in the same plane to form a coplanar surface with a sanding process or lapping process as shown in the art which can be re-sanded multiple times in the future after extended use or damage to the connecting pads, each time reducing the overall height of the column 7 to reform a fiat coplanar pad. An alternative to the electroplating process would be thermal sonic or compression bonding of a suitable metal a compression bonder or a thermal sonic ball
bonder, respectively, as typically use in the wire bonding industry such as gold to the contact pad 7, then forming epoxy around the gold ball/column or other suitable metal.
While presently preferred embodiments have been described for purposes of the disclosure, numerous changes in the arrangement of method steps and those skilled in the art can make apparatus parts. Such changes are encompassed within the spirit of the invention as defined by the appended claims.
4
Claims
1. An apparatus for resurfaceable contact pads, comprising:
an epoxy to encapsulate contact pads so that the epoxy and encapsulated contact pads are coplanar on a silicon redistribution interposcr, said redistribution interposer being electrically connected a wafer semi-conductor to a probe card where it is necessary to convert the course pad arrangement of one with a fine pad arrangement of the other through the use of an interposer board.; said resurraceabie contact pads being resurfaced one or more times with an abrasive sanding operation to recreate a coplanar surface should any contact pad surfaces become damaged to provide a cost- effective repair.
2. The apparatus tor resurraceabie contact pads according to claim! wherein said conductive contact pads are encapsulated in an epoxy and said contact pads are equally coplanar with a surface of a surrounding epoxy.
3. The apparatus according to claim 1 wherein said pads are lengthened along a ?. axis by an electro-plating operation.
4. The apparatus according to claim3 wherein a suitable temporary mask, of suitable thickness typically ranging from .0005" to .005" thick, such as a photo image-able plating mask is formed over a top surface of the interposer exposing just the pacts to be plated and the pads are built up to a desired height forming a column by an electro-plating operation, of a suitable wear resistant, low contact resistant preferably noble metal, is performed and the temporary mask is removed and a permanent epoxy is formed around the plated columns.
5. The apparatus according to claiml wherein said pads are lengthened along a z axis by an electro-less plating operation.
6. The apparatus according to claim3 wherein a suitable temporary mask, of suitable thickness typically ranging from .0005" to .005" thick, such as a photo image-able plating mask is formed over a top surface of the interposer exposing just the pads to be plated and the pads are built up to a desired height forming a column by an electro-less plating operation, of a suitable wear resistant, low contact resistant preferably noble metal, is performed and the temporary mask is removed and a permanent epoxy is formed around the plated columns.
7. The apparatus according to claiml wherein said pads are lengthened along a z axis by a thermal-sonic gold ball bonding electro-plating operation.
8. The apparatus according to ciaim3 wherein instead of to the temporary photo image- able mask a photo image-able permanent epoxy can be used.
9. The apparatus according to claim5 wherein instead of to the temporary photo image- able mask a photo image-able permanent epoxy can be used.
10. A method for resurfaceable contact pads, the steps comprising:
planarizing a contact pad's surface by forming conductive columns or bails on top surface contact pads or lands of a Silicon, organic or ceramic redistribution interposer;
encapsulating said columns or balls in an epoxy or similar moldablc compound ;
resurfacing the contact pads by an abrasive sanding operation so thai said conductive contact pads will be equally coplanar with the surface of the surrounding epoxy to recreate a coplanar surface should any contact pad surfaces become damaged to provide a cost-effective repair.
11. The method according to claim 10 wherein said conductive contact pads are encapsulated in an epoxy and said contact pads are equally coplanar with a surface of a surrounding epoxy.
12. The method according to claim 10 wherein said pads are lengthened along a z axis by an electro-plating operation.
13. The method according to claim 12 wherein a suitable temporary mask, of suitable thickness typically ranging from .0005" to .005" thick, such as a photo image-able plating mask is formed over a top surface of the interposer exposing just the pads to be plated and the pads are built up to a desired height forming a column by an electro-plating operation, of a suitable wear resistant, low contact resistant preferably noble metal, is performed and the temporary mask is removed and a permanent epoxy is formed around the plated columns.
14. The method according to claim 10 wherein said pads are lengthened along a z axis by an electro-less plating operation.
15. The method according to claim 10 wherein a suitable temporary mask, of suitable thickness typically ranging from .0005" to .005" thick, such as a photo image-able plating mask is formed over a top surface of the interposer exposing just the pads to be plated and the pads are built up to a desired height forming a column by an electro-less plating operation, of a suitable wear resistant, low contact resistant
preferably noble metal, is performed and the temporary mask is removed and a permanent epoxy is formed around the plated columns.
16. The method according to claim 10 wherein said pads are lengthened along a z axis by a thermai-sonic gold ball bonding electro-plating operation.
17. The method according to claim 10 wherein instead of to the temporary photo image- able mask a photo imagc-ablc permanent epoxy can be used.
18. The method according to claim i 0 wherein instead of to the temporary photo image- able mask a photo image-able permanent epoxy can be used.
19. The method according to claim i 0 wherein said top pads are lengthened along a z axis by electroplating or elctroless plating operation or by thermal sonic gold ball bonding .
20. The method according to claim 19 wherein when lengthening said pads by
electroplating a suitable temporary mask is formed over said the top surface of said interposer exposing the pads to be plated.
21. The method according to claim 21 wherein said mask has a suitable thickness in the range of .0005" to .005 " thick .
22. The method according o claim 20 wherein the photo-mask can be hot-roll laminated or spun with a liquid resist.
23. The method according to claim 24 wherein an electro -plating or an electro-less plating is formed to build up said [ads to a desired height forming a column in a range of 5 microns to 25 microns and the temporary mask is then removed and the an optional permanent mask is formed around said plated columns.
24. The method according to claim 24 wherein epoxy is formed around said plated columns by a potted process or a spin coating process.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562183815P | 2015-06-24 | 2015-06-24 | |
| US62/183,815 | 2015-06-24 | ||
| US15/151,658 US9978702B2 (en) | 2016-05-11 | 2016-05-11 | Resurfaceable contact pad for silicon or organic redistribution interposer for semiconductor probing |
| US15/151,658 | 2016-05-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2016209386A1 true WO2016209386A1 (en) | 2016-12-29 |
Family
ID=57586046
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US2016/031751 WO2016209386A1 (en) | 2015-06-24 | 2016-05-11 | Resurfaceable contact pad redistribution interposer for semiconductor probing |
Country Status (2)
| Country | Link |
|---|---|
| TW (1) | TW201709376A (en) |
| WO (1) | WO2016209386A1 (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5086337A (en) * | 1987-01-19 | 1992-02-04 | Hitachi, Ltd. | Connecting structure of electronic part and electronic device using the structure |
| US7086149B2 (en) * | 1993-11-16 | 2006-08-08 | Formfactor, Inc. | Method of making a contact structure with a distinctly formed tip structure |
| US7439731B2 (en) * | 2005-06-24 | 2008-10-21 | Crafts Douglas E | Temporary planar electrical contact device and method using vertically-compressible nanotube contact structures |
| US20150171024A1 (en) * | 2013-12-17 | 2015-06-18 | Stats Chippac, Ltd. | Semiconductor Device and Method of Reducing Warpage Using a Silicon to Encapsulant Ratio |
-
2016
- 2016-05-11 WO PCT/US2016/031751 patent/WO2016209386A1/en active Application Filing
- 2016-06-24 TW TW105119905A patent/TW201709376A/en unknown
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5086337A (en) * | 1987-01-19 | 1992-02-04 | Hitachi, Ltd. | Connecting structure of electronic part and electronic device using the structure |
| US7086149B2 (en) * | 1993-11-16 | 2006-08-08 | Formfactor, Inc. | Method of making a contact structure with a distinctly formed tip structure |
| US7439731B2 (en) * | 2005-06-24 | 2008-10-21 | Crafts Douglas E | Temporary planar electrical contact device and method using vertically-compressible nanotube contact structures |
| US20150171024A1 (en) * | 2013-12-17 | 2015-06-18 | Stats Chippac, Ltd. | Semiconductor Device and Method of Reducing Warpage Using a Silicon to Encapsulant Ratio |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201709376A (en) | 2017-03-01 |
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