WO2016192371A1 - Dispositif à capteur intégré et son procédé de fabrication - Google Patents

Dispositif à capteur intégré et son procédé de fabrication Download PDF

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Publication number
WO2016192371A1
WO2016192371A1 PCT/CN2015/097313 CN2015097313W WO2016192371A1 WO 2016192371 A1 WO2016192371 A1 WO 2016192371A1 CN 2015097313 W CN2015097313 W CN 2015097313W WO 2016192371 A1 WO2016192371 A1 WO 2016192371A1
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WO
WIPO (PCT)
Prior art keywords
substrate
sensitive
sensitive structure
back cavity
structural layer
Prior art date
Application number
PCT/CN2015/097313
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English (en)
Chinese (zh)
Inventor
孙艳美
Original Assignee
歌尔声学股份有限公司
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Filing date
Publication date
Application filed by 歌尔声学股份有限公司 filed Critical 歌尔声学股份有限公司
Publication of WO2016192371A1 publication Critical patent/WO2016192371A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D21/00—Measuring or testing not otherwise provided for
    • G01D21/02—Measuring two or more variables by means not covered by a single other subclass

Definitions

  • the present invention relates to the field of sensor measurement, and more particularly to an integrated device for a sensor; the present invention also relates to a method of producing a sensor integrated device.
  • sensors have been widely used in electronic products such as mobile phones and notebook computers. Many system manufacturers hope that these measuring devices can further reduce the size of the chips to maintain the miniaturization of such electronic products while maintaining the existing performance. .
  • the current problem is that the packaging process of each sensor is relatively mature, the process capability is approaching the limit, and it is difficult to further reduce the size of the chip according to the requirements of the system manufacturer.
  • a sensor integrated device comprising a first substrate and a second substrate having a back cavity, the second substrate having one side of the back cavity connected to the first substrate Above; wherein the upper end of the first substrate is provided with a first sensitive structure in the back cavity, and the upper end of the second substrate is provided with a second sensitive structure.
  • the first sensitive structure is a movable mass structure of an inertial measurement sensor.
  • the second sensitive structure is a varistor film layer of a pressure sensor.
  • the back cavity penetrates the upper and lower ends of the second substrate, and the second sensitive structure is suspended above the back cavity.
  • the back cavity is a trapezoidal groove closed at an upper end, and is disposed at an upper end of the second substrate There is a closed cavity at the lower end, and the second sensitive structure is suspended above the cavity.
  • the first substrate and the second substrate are single crystal silicon materials, and the two are bonded together by a bonding layer.
  • the invention also provides a production method of the above sensor integrated device, comprising the following steps:
  • the present invention also provides another method for producing the above sensor integrated device, comprising the following steps:
  • the present invention also provides another method for producing the above sensor integrated device, comprising the following steps:
  • the present invention also provides another method for producing the above sensor integrated device, comprising the following steps:
  • the first substrate and the first sensitive structure constitute a first sensor
  • the second substrate and the second sensitive structure constitute a second sensor
  • the first sensor and the second sensor may be accelerometers, Gyroscopes, pressure sensors, and the like are well known to those skilled in the art. Integrating the two sensors in the vertical direction not only reduces the lateral dimension of the overall package; but the second substrate in the second sensor acts as a package cover for the first sensor, which can be very useful for the first sensitive structure Good protection; it also reduces the height of the entire package, reduces the size of the overall package, and meets the miniaturization of modern electronic products.
  • the inventors of the present invention have found that in the prior art, the packaging process of each sensor has been relatively mature, and the process capability has reached the limit, and it is difficult to further reduce the size of the chip according to the requirements of the system manufacturer. Therefore, the technical task to be achieved by the present invention or the technical problem to be solved is not thought of or expected by those skilled in the art, so the present invention is a new technical solution.
  • FIG. 1 is a schematic structural view of a sensor integrated device of the present invention.
  • FIG. 2 to 4 are schematic views showing the production process of the sensor integrated device of FIG. 1.
  • FIG. 5 is a schematic structural view of a sensor integration device according to another embodiment of the present invention.
  • FIG. 6 and FIG. 7 are diagrams showing the second sensitive structure, the back cavity, and the cavity on the second substrate in FIG. Schematic diagram of production process.
  • the present invention provides a sensor integrated device including a first substrate 1 and a second substrate 3 disposed above the first substrate 1, wherein the second The substrate 3 has a back cavity 5 which can be formed on the second substrate 3, for example by etching known to those skilled in the art.
  • the second substrate 3 has a side of the back cavity 5 connected above the first substrate 1 such that the lower end of the back cavity 5 is encapsulated by the first substrate 1.
  • both the first substrate 1 and the second substrate 3 may be made of a single crystal silicon material, and the first substrate 1 and the second substrate 3 may be connected by SI-SI bonding through the bonding layer 2 Together, the bonding layer 2 is preferably made of a silicon dioxide material.
  • the sensor integrated device of the present invention is provided with a first sensitive structure 4 at the upper end of the first substrate 1, and the first sensitive structure 4 is located in the back cavity 5 of the second substrate 3, so that the first sensitive structure 4 It is encapsulated by the second substrate 3.
  • the first sensitive structure 4 is a measuring device of the sensor, through which the required measurement data is obtained by the first sensitive structure 4.
  • the first sensitive structure 4 may be a movable mass structure in an inertial measurement sensor, when When subjected to inertia, the movable mass structure is deflected or translated, and finally the inertial force is output as an electrical signal.
  • the inertial measurement sensor may be a structure well known to those skilled in the art such as an accelerometer or a gyroscope, and the detailed structure, manufacturing method, and operation principle thereof will not be described herein.
  • a second sensitive structure 6 is disposed at an upper end of the second substrate 3.
  • the second sensitive structure 6 is a measuring device of the sensor, through which the required measurement data is obtained by the second sensitive structure 6.
  • the second sensitive structure 6 may be a varistor film layer of a pressure sensor.
  • the second sensitive structure 6 may be made of a single crystal silicon material, and a silicon dioxide layer 7 is disposed between the second sensitive substrate 6 and the second substrate 3. The silicon oxide layer 7 is bonded together and the insulation between the second substrate 3 and the second sensitive structure 6 is achieved by the silicon dioxide layer 7.
  • the second sensitive structure 6 injects impurities by means of heavily doping and light doping, for example, implanting boron elements to form P+, P-, and finally forming the second sensitive structure 6 into a varistor film layer.
  • impurities by means of heavily doping and light doping, for example, implanting boron elements to form P+, P-, and finally forming the second sensitive structure 6 into a varistor film layer.
  • the specific structure, manufacturing method, and working principle of the varistor film layer are common knowledge of those skilled in the art, and are not described herein again.
  • the back cavity 5 penetrates the upper and lower ends of the second substrate 3, and the second sensitive structure 6 is disposed at the upper end of the second substrate 3 and suspended in the back cavity 5.
  • the lower end of the back cavity 5 is encapsulated by the first substrate 1.
  • the back chamber 5 is enclosed as a closed chamber, which can serve as the cover of the first sensitive structure 4, can prevent foreign matter from entering the first sensitive structure 4, and can provide a vacuum environment, The damping of the movement of the first sensitive structure 4 is reduced.
  • the first substrate and the first sensitive structure constitute a first sensor
  • the second substrate and the second sensitive structure constitute a second sensor
  • the first sensor and the second sensor may be accelerometers
  • a sensor structure known to those skilled in the art such as a gyroscope or a pressure sensor. Integrating the two sensors in the vertical direction not only reduces the lateral dimension of the overall package; but the second substrate in the second sensor acts as a package cover for the first sensor, which can be very useful for the first sensitive structure Good protection; it also reduces the height of the entire package, reduces the size of the overall package, and meets the miniaturization of modern electronic products.
  • the back cavity 5 is closed at the upper end.
  • the trapezoidal groove is provided at the upper end of the second substrate 3 with a cavity 8 closed at the lower end, that is, the back cavity 5 and the cavity 8 are spaced apart from each other and are not connected together.
  • the second sensitive structure 6 is disposed at the upper end of the second substrate 3 and suspended above the cavity 8; the first sensitive structure 4 is disposed at the upper end of the first substrate 1 and located at the back cavity of the second substrate 3. 5, thereby completely isolating the first sensitive structure 4 and the second sensitive structure 6 for better protection.
  • the invention also provides a method for producing a sensor integrated device, comprising the following steps:
  • a first sensitive structural layer is disposed on the upper surface of the first substrate 1, and the first sensitive structural layer is configured as the first sensitive structure 4, with reference to FIG. 2; in particular, first, for example, by a single Depositing a bonding layer 2 on the upper surface of the first substrate 1 composed of a crystalline silicon wafer, and etching the bonding layer 2 into a desired shape; then bonding the first sensitive structural layer to the first layer through the bonding layer 2 a substrate 1 and etching the first sensitive structure layer into a predetermined first sensitive structure 4 according to actual needs to form a measuring device of the first sensor;
  • a silicon dioxide layer 7 is further disposed between the second substrate 3 and the second sensitive structure layer, wherein the second substrate 3 and the second sensitive structural layer are all made of a single crystal silicon material. The two are bonded together through the silicon dioxide layer 7 and insulated from each other.
  • the second substrate 3, the silicon dioxide layer 7, and the second sensitive structure layer integrally constitute a SOI silicon wafer in the prior art.
  • the second sensitive structural layer of the upper layer of the SOI wafer is constructed as a predetermined second sensitive structure 6, and is etched on the second substrate 3 of the lower layer of the SOI wafer to form the back cavity 5.
  • the second sensitive structure is a varistor film layer
  • impurities may be implanted on the second sensitive structure layer by heavy doping or light doping, for example, boron is implanted to form P+, P-, and finally
  • the second sensitive structural layer is constructed as a piezoresistive film layer.
  • the lower surface of the second substrate 3 may be bonded to the upper surface of the first substrate 1 through the bonding layer 2, and the first sensitive structure 4 on the first substrate 1 is encapsulated in the second liner In the back cavity 5 of the bottom 3.
  • the first sensitive structure 4 is formed on the first substrate 1, and then the second sensitive structure 6 is formed on the second substrate 3.
  • first form a second sensitive structure on the second substrate 3. 6 The back cavity 5, after which the first sensitive structure 4 is formed on the first substrate 1, this sequence of step changes has no substantial effect on the resulting sensor integrated device.
  • the invention also provides a production method of another sensor integrated device, which is basically the same as the above production method, the only difference being the step b), in the embodiment, the step b) is as follows:
  • a second sensitive structural layer suspended above the cavity 8 is disposed on the upper surface of the second substrate 3, and the second sensitive structural layer is configured as the second sensitive structure 6, see FIGS. 6 and 7.
  • the first sensitive structure 4 is formed on the first substrate 1, and then the second sensitive structure 6, the back cavity 5, the cavity 8, and the like are formed on the second substrate 3.
  • the cavity 8, the second sensitive structure 6, the back cavity 5 on the second substrate 3 and then form the first sensitive structure on the first substrate 1. 4. This change in the sequence of steps has no substantial effect on the resulting sensor integrated device.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Pressure Sensors (AREA)

Abstract

L'invention concerne un dispositif à capteur intégré et son procédé de fabrication, qui comprend un premier substrat (1) et un second substrat (3) ayant une cavité arrière (5), et un côté du second substrat (3) ayant la cavité arrière (5) est connecté au-dessus du premier substrat (1) ; une extrémité supérieure du premier substrat (1) comprend une première structure sensible (4) située dans la cavité arrière (5), et une extrémité supérieure du second substrat (3) comprend une seconde structure sensible (6). Le premier substrat (1) et la première structure sensible (4) du dispositif à capteur intégré forment un premier capteur, et le second substrat (3) et la seconde structure sensible (6) forment un second capteur. L'intégration de deux capteurs dans une direction verticale réduit une dimension transversale de la totalité de l'enveloppe. De plus, l'utilisation du second substrat (3) dans le second capteur en tant que couvercle d'enveloppe du premier capteur fournit un bon effet protecteur à la première structure sensible (4). En outre, la hauteur de la totalité de l'enveloppe est réduite et la dimension de la totalité de l'enveloppe est diminuée, ce qui permet de satisfaire le développement de la miniaturisation du produit électronique moderne.
PCT/CN2015/097313 2015-05-29 2015-12-14 Dispositif à capteur intégré et son procédé de fabrication WO2016192371A1 (fr)

Applications Claiming Priority (2)

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CN201510289704.X 2015-05-29
CN201510289704.XA CN105043439A (zh) 2015-05-29 2015-05-29 传感器集成装置及其生产方法

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WO2016192371A1 true WO2016192371A1 (fr) 2016-12-08

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Cited By (1)

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CN115165174A (zh) * 2022-08-26 2022-10-11 南京高华科技股份有限公司 一种mems压阻式压力传感器及其制备方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
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CN105043439A (zh) * 2015-05-29 2015-11-11 歌尔声学股份有限公司 传感器集成装置及其生产方法
CN105783998A (zh) * 2016-04-15 2016-07-20 广东合微集成电路技术有限公司 一种复合传感器
CN108225413A (zh) * 2017-12-19 2018-06-29 歌尔股份有限公司 集成式传感器
EP3705885A1 (fr) * 2019-03-06 2020-09-09 ams AG Dispositif de détection et procédé de fonctionnement d'un dispositif de détection
CN110346602A (zh) * 2019-06-26 2019-10-18 歌尔股份有限公司 一种加速度计、环境传感器的集成芯片及其制造方法

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CN105043439A (zh) * 2015-05-29 2015-11-11 歌尔声学股份有限公司 传感器集成装置及其生产方法
CN204881683U (zh) * 2015-05-29 2015-12-16 歌尔声学股份有限公司 传感器集成装置

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US6178249B1 (en) * 1998-06-18 2001-01-23 Nokia Mobile Phones Limited Attachment of a micromechanical microphone
CN1724858A (zh) * 2004-07-21 2006-01-25 罗伯特·博世有限公司 控制内燃机的方法和装置
CN101437187A (zh) * 2007-11-15 2009-05-20 财团法人工业技术研究院 用以减缩微型传感器封装体积的堆叠式封装结构
CN101905853A (zh) * 2009-06-03 2010-12-08 霍尼韦尔国际公司 集成微机电系统(mems)传感器设备
CN103449352A (zh) * 2012-05-31 2013-12-18 精工爱普生株式会社 电子装置及其制造方法、以及电子设备
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115165174A (zh) * 2022-08-26 2022-10-11 南京高华科技股份有限公司 一种mems压阻式压力传感器及其制备方法
CN115165174B (zh) * 2022-08-26 2024-01-30 南京高华科技股份有限公司 一种mems压阻式压力传感器及其制备方法

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