WO2016192358A1 - 一种差分电容式mems麦克风 - Google Patents

一种差分电容式mems麦克风 Download PDF

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Publication number
WO2016192358A1
WO2016192358A1 PCT/CN2015/096914 CN2015096914W WO2016192358A1 WO 2016192358 A1 WO2016192358 A1 WO 2016192358A1 CN 2015096914 W CN2015096914 W CN 2015096914W WO 2016192358 A1 WO2016192358 A1 WO 2016192358A1
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Prior art keywords
diaphragm
back plate
sound hole
capacitor
circuit board
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PCT/CN2015/096914
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English (en)
French (fr)
Inventor
郑国光
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Goertek Inc
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Goertek Inc
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Priority to US15/554,633 priority Critical patent/US20180041840A1/en
Publication of WO2016192358A1 publication Critical patent/WO2016192358A1/zh
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/04—Microphones
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R1/00—Details of transducers, loudspeakers or microphones
    • H04R1/02—Casings; Cabinets ; Supports therefor; Mountings therein
    • H04R1/04—Structural association of microphone with electric circuitry therefor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/005—Electrostatic transducers using semiconductor materials
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R3/00—Circuits for transducers
    • H04R3/005—Circuits for transducers for combining the signals of two or more microphones
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R7/00—Diaphragms for electromechanical transducers; Cones
    • H04R7/02—Diaphragms for electromechanical transducers; Cones characterised by the construction
    • H04R7/04—Plane diaphragms
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
    • H04R2201/003—Mems transducers or their use
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R2307/00—Details of diaphragms or cones for electromechanical transducers, their suspension or their manufacture covered by H04R7/00 or H04R31/003, not provided for in any of its subgroups
    • H04R2307/025—Diaphragms comprising polymeric materials
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R2410/00—Microphones
    • H04R2410/01—Noise reduction using microphones having different directional characteristics

Definitions

  • the present invention relates to a microphone, and more particularly to a differential capacitive MEMS microphone.
  • MEMS microphone is a kind of acoustic and electrical transducer made by micromachining technology, which has the characteristics of small volume, good frequency response and low noise. With the development of compact and thin electronic devices, MEMS microphones are increasingly being used on these devices.
  • the MEMS microphone product includes a MEMS chip based on capacitance detection and an ASIC chip.
  • the capacitance of the MEMS chip changes correspondingly with the input sound signal, and then the ASIC chip is used to process and output the changed capacitance signal.
  • a MEMS chip generally includes a substrate having a back cavity, a parallel plate capacitor composed of a back plate and a diaphragm disposed above the substrate, the diaphragm receiving an external sound signal and vibrating, thereby causing the parallel plate capacitor to generate a varying electrical signal. , to achieve the sound-electric conversion function.
  • the problem with the above technical solution is that the single-capacitance detection cannot filter out the external interference signal, affecting the noise level of the output signal, and cannot achieve a high signal-to-noise ratio.
  • the present invention provides a differential capacitive MEMS microphone comprising: a circuit board, a first MEMS chip, and a second MEMS chip; the first MEMS chip comprising: a first substrate disposed on the circuit board, The first substrate is provided with a first opening penetrating up and down; a first capacitor disposed on the first substrate, the first capacitor includes a first back plate located above, a lower back and the first back a first diaphragm opposite to the plate, and a first isolation layer disposed between the first back plate and the first diaphragm; the second MEMS chip includes: disposed at a second substrate on the circuit board, the second substrate is provided with a second opening penetrating up and down; a second capacitor disposed on the second substrate, the second capacitor comprising a second back located below a plate, a second diaphragm opposite to the second back plate, and a second isolation layer disposed between the second back plate and the second diaphragm; the first capacitor and The second capacitors together form a differential capacitor.
  • the sensing portions of the first back plate and the second back plate are respectively provided with a plurality of through holes.
  • the center positions of the first diaphragm and the second diaphragm are respectively provided with a plurality of fine through holes.
  • the method further includes an outer casing enclosing the package cavity with the circuit board, the first MEMS chip and the second MEMS chip being located inside the package cavity.
  • the housing is provided with a sound hole.
  • the circuit board opens a first sound hole at a first opening position and a second sound hole at a second opening position.
  • the side of the circuit board combined with the outer casing is an inner side of the circuit board; the inner side of the circuit board is respectively provided with a first sound hole communicating with the first opening and a second sound communicating with the second opening a third sound hole is disposed on an outer side of the circuit board; the third sound hole is located between the first sound hole and the second sound hole, and the first sound hole is connected to the third through the first channel
  • the sound holes are in communication, and the second sound holes are in communication with the third sound holes via the second passage.
  • the first back plate, the first diaphragm, the second back plate, and the second diaphragm are all polysilicon materials;
  • the first back plate, the first diaphragm, the second back plate, and the second diaphragm are respectively provided with metal connection points.
  • the method further includes an ASIC chip disposed on the circuit board, wherein the ASIC chip is provided with first, second, and third connecting portions; wherein the first connecting portion is connected to the first backing plate, The second connecting portion is connected to the second back plate, and the third connecting portion is respectively connected to the first diaphragm and the second diaphragm.
  • the inventors of the present invention have found that there is no differential capacitive MEMS microphone in the prior art. Therefore, the present invention is a new technical solution.
  • the differential capacitive MEMS microphone of the present invention The noise signal of the boundary can be filtered to improve the signal-to-noise ratio and improve the performance of the microphone product.
  • FIG. 1 is a schematic structural view of a first embodiment of a differential capacitance type MEMS microphone of the present invention.
  • Fig. 2 is a schematic view showing the deformation of the diaphragm in which the sound pressure acts downward in the first embodiment.
  • Fig. 3 is a schematic view showing the deformation of the diaphragm in which the sound pressure acts upward in the first embodiment.
  • FIG. 4 is a schematic structural view of a second embodiment of a differential capacitance type MEMS microphone according to the present invention.
  • FIG. 5 is a schematic structural view of a third embodiment of a differential capacitance type MEMS microphone according to the present invention.
  • the circuit board 4 and the outer casing 5 enclose a package cavity, and the first is arranged inside the package cavity
  • the MEMS chip 1, the second MEM chip 2, and the ASIC chip 3 have an acoustic hole 51 formed in the outer casing 5.
  • the first MEMS chip 1 includes: a first substrate 11 disposed on the circuit board 4, the first substrate 11 is provided with a first opening 111 penetrating up and down; and is disposed on the first substrate 11 and insulated from the first substrate 11 a first capacitor, the first capacitor includes a first back plate 14 located above, a first diaphragm 12 opposite to the first back plate 14 at the bottom, and a first back plate 14 and the first diaphragm A first isolation layer 13 that maintains a gap between the two.
  • the second MEMS chip 2 includes: a second substrate 21 disposed on the circuit board 4, the second substrate 21 is provided with a second opening 211 penetrating up and down; and is disposed on the second substrate 21 and insulated from the second substrate 21.
  • a second capacitor the second capacitor includes a second back plate 24 located below, a second diaphragm 22 located opposite the second back plate 24, and a second back plate 24 and a second diaphragm A second isolation layer 23 that maintains a gap between the two.
  • the first back plate 14 and the second back plate 24 are fixed plates, and the first diaphragm 12 and the second diaphragm 22 are movable plates.
  • the sensing portions of the first back plate 14 and the second back plate 24 are respectively provided with a plurality of through holes 100, and the center positions of the first diaphragm 12 and the second diaphragm 22 are respectively provided with a plurality of small through holes 200,
  • the hole 100 functions to conduct sound, and the through hole 200 functions to balance the air pressure.
  • the first back plate 14, the first diaphragm 12, the second back plate 24, and the second diaphragm 22 are respectively provided with metal connection points, and the ASIC chip 3 is provided with first, second and third connecting portions;
  • the first connecting portion of the ASIC chip 3 is connected to the metal connection point of the first back plate 14, the second connecting portion is connected to the metal connection point of the second back plate 24, and the third connecting portion is respectively connected to the first diaphragm.
  • the metal connection point of 12 is connected to the metal connection point of the second diaphragm 22.
  • the first capacitor and the second capacitor form a pair of differential capacitors.
  • the first, second, and third connecting portions are, for example, pads.
  • the two MEMS chips are used to collect the acoustic signals.
  • the two MEMS chips are different, one back plate is on the top, the diaphragm is on the bottom, and another diaphragm is on the back.
  • the plate is below, and the two MEMS chips form a pair of differential capacitors.
  • the capacitances of the first MEMS chip 1 and the second MEMS chip 2 increase one and the other decreases.
  • the first capacitance of the first MEMS chip 1 is represented as C1
  • the second capacitance of the second MEMS chip 2 is represented as C2
  • the first diaphragm 12 moves downward, causing the spacing between the first diaphragm 12 and the first back plate 14 to increase, and the first capacitance C1 is decreased;
  • the diaphragm 22 also moves downward, causing the spacing between the second diaphragm 22 and the second backing plate 24 to decrease, and the second capacitance C2 to increase.
  • the first diaphragm 12 moves upward, causing the spacing between the first diaphragm 12 and the first backing plate 14 to decrease, and the first capacitor C1 to increase;
  • the film 22 also moves upward, causing the spacing between the second diaphragm 22 and the second backing plate 24 to increase, and the second capacitance C2 to decrease.
  • the first back plate 14, the first diaphragm 12, the second back plate 24, and the second diaphragm 22 are all made of polysilicon; or the first back plate 14, the first diaphragm 12, and the second back plate 24
  • the second diaphragm 22 includes a silicon nitride layer and a polysilicon layer; or the first back plate 14, the first diaphragm 12, the second back plate 24, and the second diaphragm 22 each include a silicon nitride layer and a metal Floor.
  • the silicon nitride layer mainly serves as a support, and the polysilicon layer or the metal layer is used as a capacitor plate.
  • a second embodiment of the differential capacitance type MEMS microphone of the present invention is different from the first embodiment in that the microphone is changed from the TOP structure to the BOTTOM structure, and the circuit board 4 is positioned at the first opening 111.
  • the sound hole 41 of the first MEMS chip 1 is opened, and the sound hole 42 of the second MEMS chip is opened at the position of the second opening 211, so that the requirement of inputting sound from under the microphone can be satisfied.
  • a third embodiment of the differential capacitance type MEMS microphone of the present invention is different from the second embodiment in that the side where the wiring board 4 is bonded to the outer casing 5 is the inner side of the wiring board 4, and the other side. It is the outer side of the circuit board 4.
  • a first sound hole 41 communicating with the first opening 111 and a second sound hole 42 communicating with the second opening 211 are respectively disposed on the inner side of the circuit board 4, and a third sound hole 43 is opened on the outer side of the circuit board 4;
  • the sound hole 43 is located between the first sound hole 41 and the second sound hole 42.
  • the first sound hole 41 communicates with the third sound hole 43 via the first channel 44, and the second sound hole 42 passes through the second channel 45 and the third sound hole. 43 connected.
  • the third embodiment makes a channel in the middle of the circuit board 4, so that after the sound wave enters the third sound hole 43, the first channel 44 and the first sound hole 41 reach the first
  • the diaphragm of the MEMS chip and the diaphragm of the second MEMS chip 2 are reached via the second passage 45 and the second sound hole 42.
  • the solution can provide certain protection to the MEMS chip, preventing dust or solid particles from entering the inside of the MEMS chip and causing damage to the diaphragm of the MEMS chip.
  • the differential capacitance type MEMS microphone of the invention can filter out the noise signal of the boundary, improve the signal to noise ratio, and improve the performance of the microphone product.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Otolaryngology (AREA)
  • Multimedia (AREA)
  • Pressure Sensors (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
  • Micromachines (AREA)

Abstract

本发明公开了一种差分电容式MEMS麦克风，包括：线路板、第一MEMS芯片、以及第二MEMS芯片；第一MEMS芯片包括设置在线路板上的第一基底，设置在第一基底上的第一电容，包括位于上方的第一背极板、位于下方的第一振膜、以及设置在第一背极板和第一振膜之间的第一隔离层；第二MEMS芯片包括设置在线路板上的第二基底，设置在第二基底上的第二电容，包括位于下方的第二背极板、位于上方的第二振膜、以及设置在第二背极板和第二振膜之间的第二隔离层；第一电容和第二电容构成一对差分电容。本发明的差分电容式MEMS麦克风可以滤除外界的噪声信号，提高信噪比，提高麦克风产品的性能。

Description

一种差分电容式MEMS麦克风 技术领域
本发明涉及一种麦克风，尤其涉及一种差分电容式MEMS麦克风。
背景技术
MEMS麦克风是一种用微机械加工技术制作出来的声电换能器，其具有体积小、频响特性好、噪声低等特点。随着电子设备的小巧化、薄型化发展，MEMS麦克风被越来越广泛地运用到这些设备上。
目前MEMS麦克风产品中包含一个基于电容检测的MEMS芯片和一个ASIC芯片，MEMS芯片的电容会随着输入声音信号的不同产生相应的变化，再利用ASIC芯片对变化的电容信号进行处理和输出从而实现对声音的拾取。MEMS芯片通常包括具有背腔的基底、在基底上方设置的由背极板和振膜构成的平行板电容器，振膜接收外界的声音信号并发生振动，从而使平行板电容器产生一个变化的电信号，实现声-电转换功能。
上述技术方案的问题在于，单个电容检测对外界的干扰信号无法滤除，影响输出信号的噪声水平，无法达到较高的信噪比。
发明内容
本发明的目的是提供一种差分电容式MEMS麦克风以降低噪声，提高信噪比。
本发明提供了一种差分电容式MEMS麦克风，包括：线路板、第一MEMS芯片、以及第二MEMS芯片；所述第一MEMS芯片包括：设置在所述线路板上的第一基底，所述第一基底设置有上下贯通的第一开孔；设置在所述第一基底上的第一电容，所述第一电容包括位于上方的第一背极板、位于下方的与所述第一背极板相对的第一振膜、以及设置在所述第一背极板和第一振膜之间的第一隔离层；所述第二MEMS芯片包括：设置在 所述线路板上的第二基底，所述第二基底设置有上下贯通的第二开孔；设置在所述第二基底上的第二电容，所述第二电容包括位于下方的第二背极板、位于上方的与所述第二背极板相对的第二振膜、以及设置在所述第二背极板和第二振膜之间的第二隔离层；所述第一电容和所述第二电容共同构成差分电容。
优选的，所述第一背极板和第二背极板的感应部分分别设置有多个通孔。
优选的，所述第一振膜和所述第二振膜的中心位置分别设置有若干细小的通孔。
优选的，还包括与所述线路板围成封装腔体的外壳，所述第一MEMS芯片和第二MEMS芯片位于所述封装腔体内部。
优选的，所述外壳上开设有声孔。
优选的，所述线路板在第一开孔位置处开设第一声孔，在第二开孔位置处开设第二声孔。
优选的，所述线路板与所述外壳结合的一侧为线路板的内侧；所述线路板的内侧分别开设有连通第一开孔的第一声孔和连通第二开孔的第二声孔，所述线路板的外侧开设有第三声孔；所述第三声孔位于所述第一声孔和第二声孔中间，所述第一声孔经由第一通道与所述第三声孔连通，所述第二声孔经由第二通道与所述第三声孔连通。
优选的，所述第一背极板、第一振膜、第二背极板、第二振膜均为多晶硅材质；
优选的，所述第一背极板、第一振膜、第二背极板、第二振膜上分别设置有金属连接点。
优选的，还包括设置于所述线路板上的ASIC芯片，所述ASIC芯片上设置有第一、第二、第三连接部；其中，所述第一连接部和第一背极板连接，所述第二连接部与第二背极板连接，所述第三连接部分别与第一振膜和第二振膜连接。
本发明的发明人发现，在现有技术中尚没有差分电容式MEMS麦克风。因此本发明是一种新的技术方案。本发明的差分电容式MEMS麦克风， 可以滤除外界的噪声信号，提高信噪比，提高麦克风产品的性能。
通过以下参照附图对本发明的示例性实施例的详细描述，本发明的其它特征及其优点将会变得清楚。
附图说明
被结合在说明书中并构成说明书的一部分的附图示出了本发明的实施例，并且连同其说明一起用于解释本发明的原理。
图1是本发明差分电容式MEMS麦克风第一实施例的结构示意图。
图2是第一实施例声压向下作用的振膜变形示意图。
图3是第一实施例声压向上作用的振膜变形示意图。
图4是本发明差分电容式MEMS麦克风第二实施例的结构示意图。
图5是本发明差分电容式MEMS麦克风第三实施例的结构示意图。
具体实施方式
现在将参照附图来详细描述本发明的各种示例性实施例。应注意到：除非另外具体说明，否则在这些实施例中阐述的部件和步骤的相对布置、数字表达式和数值不限制本发明的范围。
以下对至少一个示例性实施例的描述实际上仅仅是说明性的，决不作为对本发明及其应用或使用的任何限制。
对于相关领域普通技术人员已知的技术、方法和设备可能不作详细讨论，但在适当情况下，技术、方法和设备应当被视为说明书的一部分。
在这里示出和讨论的所有例子中，任何具体值应被解释为仅仅是示例性的，而不是作为限制。因此，示例性实施例的其它例子可以具有不同的值。
应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步讨论。
参考图1-3所示是本发明差分电容式MEMS麦克风的第一实施例：
由线路板4和外壳5围成封装腔体，在封装腔体内部设置有第一 MEMS芯片1、第二MEM芯片2、以及ASIC芯片3，外壳5上开设有声孔51。
第一MEMS芯片1包括：设置在线路板4上的第一基底11，第一基底11设置有上下贯通的第一开孔111；设置在第一基底11上并与第一基底11绝缘相连的第一电容，第一电容包括位于上方的第一背极板14、位于下方的与第一背极板14相对的第一振膜12、以及设置在第一背极板14和第一振膜12之间使两者保持间隙的第一隔离层13。
第二MEMS芯片2包括：设置在线路板4上的第二基底21，第二基底21设置有上下贯通的第二开孔211；设置在第二基底21上并与第二基底21绝缘相连的第二电容，第二电容包括位于下方的第二背极板24、位于上方的与第二背极板24相对的第二振膜22、以及设置在第二背极板24和第二振膜22之间使两者保持间隙的第二隔离层23。
第一背极板14和第二背极板24为固定极板，第一振膜12和第二振膜22为可动极板。
第一背极板14和第二背极板24的感应部分分别设置有多个通孔100，第一振膜12和第二振膜22的中心位置分别设置有若干细小的通孔200，通孔100起到传导声音的作用，通孔200起到平衡气压的作用。
第一背极板14、第一振膜12、第二背极板24、第二振膜22上分别设置有金属连接点，ASIC芯片3上设置有第一、第二、第三连接部；其中，ASIC芯片3的第一连接部和第一背极板14的金属连接点连接，第二连接部与第二背极板24的金属连接点连接，第三连接部分别与第一振膜12的金属连接点和第二振膜22的金属连接点连接。第一电容和第二电容构成一对差分电容。第一、第二、第三连接部例如为焊盘。
本发明在MEMS麦克风产品中，采用两颗MEMS芯片来进行声波信号的采集，这两颗MEMS芯片有所不同，一颗背极板在上，振膜在下，另外一颗振膜在上，背极板在下，两颗MEMS芯片组成一对差分电容。当有声波进入MEMS麦克风内部后，第一MEMS芯片1和第二MEMS芯片2的电容一个增加，另一个减小。对两颗MEMS芯片的电容变化进行差分，就可以滤除外界的噪声信号提高信噪比。
具体来说，第一MEMS芯片1的第一电容表示为C1，第二MEMS芯片2的第二电容表示为C2，在没有声波作用时，C1＝C2＝C0。当有声波从声孔51进入到麦克风内部时：
如果声压向下作用，参考图2所示，第一振膜12向下运动，导致第一振膜12和第一背极板14之间的间距增加，第一电容C1减小；第二振膜22也向下运动，导致第二振膜22和第二背极板24之间的间距减小，第二电容C2增大。从而第一电容C1<C0<第二电容C2。
如果声压向上作用，参考图3所示，第一振膜12向上运动，导致第一振膜12和第一背极板14之间的间距减小，第一电容C1增大；第二振膜22也向上运动，导致第二振膜22和第二背极板24之间的间距增大，第二电容C2减小。从而第一电容C1>C0>第二电容C2。
第一背极板14、第一振膜12、第二背极板24、第二振膜22均为多晶硅材质；或者第一背极板14、第一振膜12、第二背极板24、第二振膜22均包括氮化硅层和多晶硅层；或者第一背极板14、第一振膜12、第二背极板24、第二振膜22均包括氮化硅层和金属层。氮化硅层主要起支撑作用，多晶硅层或金属层作为电容的极板使用。
参考图4所示是本发明差分电容式MEMS麦克风的第二实施例，和第一实施例的不同之处在于，将麦克风从TOP结构改变为BOTTOM结构，线路板4在第一开孔111位置处开设第一MEMS芯片1的声孔41，在第二开孔211位置处开设第二MEMS芯片的声孔42，这样就可以满足从麦克风下方进音的需求。
参考图5所示是本发明差分电容式MEMS麦克风的第三实施例，和第二实施例的不同之处在于，线路板4与外壳5结合的一侧为线路板4的内侧，另一侧为线路板4的外侧。在线路板4的内侧分别开设有连通第一开孔111的第一声孔41和连通第二开孔211的第二声孔42，线路板4的外侧开设有第三声孔43；第三声孔43位于第一声孔41和第二声孔42中间，第一声孔41经由第一通道44与第三声孔43连通，第二声孔42经由第二通道45与第三声孔43连通。第三实施例在线路板4的中间做出通道，可以使声波进入第三声孔43后，经由第一通道44和第一声孔41到达第一 MEMS芯片的振膜，以及经由第二通道45和第二声孔42到达第二MEMS芯片2的振膜。该方案可以对MEMS芯片提供一定的保护，防止粉尘或固体颗粒进入MEMS芯片内部对MEMS芯片的振膜造成破坏。
本发明的差分电容式MEMS麦克风，可以滤除外界的噪声信号，提高信噪比，提高麦克风产品的性能。
虽然已经通过例子对本发明的一些特定实施例进行了详细说明，但是本领域的技术人员应该理解，以上例子仅是为了进行说明，而不是为了限制本发明的范围。本领域的技术人员应该理解，可在不脱离本发明的范围和精神的情况下，对以上实施例进行修改。本发明的范围由所附权利要求来限定。

Claims (10)

  1. 一种差分电容式MEMS麦克风，其特征在于，包括：
    线路板(4)、第一MEMS芯片(1)、以及第二MEMS芯片(2)；
    所述第一MEMS芯片(1)包括：设置在所述线路板(4)上的第一基底(11)，所述第一基底(11)设置有上下贯通的第一开孔(111)；设置在所述第一基底上(11)的第一电容，所述第一电容包括位于上方的第一背极板(14)、位于下方的与所述第一背极板(14)相对的第一振膜(12)、以及设置在所述第一背极板(14)和第一振膜(12)之间的第一隔离层(13)；
    所述第二MEMS芯片(2)包括：设置在所述线路板(4)上的第二基底(21)，所述第二基底(21)设置有上下贯通的第二开孔(211)；设置在所述第二基底(21)上的第二电容，所述第二电容包括位于下方的第二背极板(24)、位于上方的与所述第二背极板(24)相对的第二振膜(22)、以及设置在所述第二背极板(24)和第二振膜(22)之间的第二隔离层；
    所述第一电容和所述第二电容共同构成差分电容。
  2. 根据权利要求1所述的麦克风，其特征在于，所述第一背极板(14)和第二背极板(24)的感应部分分别设置有多个通孔(100)。
  3. 根据权利要求2所述的麦克风，其特征在于，所述第一振膜(12)和所述第二振膜(22)的中心位置分别设置有若干细小的通孔(200)。
  4. 根据权利要求1所述的麦克风，其特征在于，还包括与所述线路板(4)围成封装腔体的外壳(5)，所述第一MEMS芯片(1)和第二MEMS芯片(2)位于所述封装腔体内部。
  5. 根据权利要求4所述的麦克风，其特征在于，所述外壳(5)上开设有声孔(51)。
  6. 根据权利要求4所述的麦克风，其特征在于，所述线路板(4)在第一开孔(111)位置处开设第一声孔(41)，在第二开孔(211)位置处开设第二声孔(42)。
  7. 根据权利要求4所述的麦克风，其特征在于，所述线路板(4)与所述外壳(5)结合的一侧为线路板(4)的内侧；所述线路板(4)的内侧分 别开设有连通第一开孔(111)的第一声孔(41)和连通第二开孔(211)的第二声孔(42)，所述线路板(4)的外侧开设有第三声孔(43)；所述第三声孔(43)位于所述第一声孔(41)和第二声孔(42)中间，所述第一声孔(41)经由第一通道(44)与所述第三声孔(43)连通，所述第二声孔(42)经由第二通道(45)与所述第三声孔(43)连通。
  8. 根据权利要求1所述的麦克风，其特征在于，所述第一背极板(14)、第一振膜(12)、第二背极板(24)、第二振膜(22)均为多晶硅材质；
  9. 根据权利要求1所述的麦克风，其特征在于，所述第一背极板(14)、第一振膜(12)、第二背极板(24)、第二振膜(22)上分别设置有金属连接点。
  10. 根据权利要求1-9任一项所述的麦克风，其特征在于，还包括设置于所述线路板上的ASIC芯片(3)，所述ASIC芯片(3)上设置有第一、第二、第三连接部；其中，所述第一连接部和第一背极板(14)连接，所述第二连接部与第二背极板(24)连接，述述第三连接部分别与第一振膜(12)和第二振膜(22)连接。
PCT/CN2015/096914 2015-05-29 2015-12-10 一种差分电容式mems麦克风 Ceased WO2016192358A1 (zh)

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