CN203193893U - Mems麦克风 - Google Patents
Mems麦克风 Download PDFInfo
- Publication number
- CN203193893U CN203193893U CN 201320175518 CN201320175518U CN203193893U CN 203193893 U CN203193893 U CN 203193893U CN 201320175518 CN201320175518 CN 201320175518 CN 201320175518 U CN201320175518 U CN 201320175518U CN 203193893 U CN203193893 U CN 203193893U
- Authority
- CN
- China
- Prior art keywords
- wiring board
- hole
- mems
- strutting piece
- mems microphone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000000630 rising effect Effects 0.000 claims description 33
- 239000003292 glue Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 13
- 238000010276 construction Methods 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 2
- 238000009434 installation Methods 0.000 claims description 2
- 230000003139 buffering effect Effects 0.000 abstract description 8
- 230000002035 prolonged effect Effects 0.000 abstract description 5
- 230000001681 protective effect Effects 0.000 abstract description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000001771 impaired effect Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- -1 31b Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 208000002925 dental caries Diseases 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Images
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- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
- Micromachines (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201320175518 CN203193893U (zh) | 2013-04-09 | 2013-04-09 | Mems麦克风 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201320175518 CN203193893U (zh) | 2013-04-09 | 2013-04-09 | Mems麦克风 |
Publications (1)
Publication Number | Publication Date |
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CN203193893U true CN203193893U (zh) | 2013-09-11 |
Family
ID=49110715
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 201320175518 Expired - Lifetime CN203193893U (zh) | 2013-04-09 | 2013-04-09 | Mems麦克风 |
Country Status (1)
Country | Link |
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CN (1) | CN203193893U (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104902415A (zh) * | 2015-05-29 | 2015-09-09 | 歌尔声学股份有限公司 | 一种差分电容式mems麦克风 |
CN104902403A (zh) * | 2015-06-30 | 2015-09-09 | 歌尔声学股份有限公司 | 一种mems麦克风 |
CN105072551A (zh) * | 2015-08-20 | 2015-11-18 | 歌尔声学股份有限公司 | Mems麦克风和mems声学传感芯片 |
CN113415781A (zh) * | 2021-06-17 | 2021-09-21 | 甬矽电子(宁波)股份有限公司 | 双mems芯片封装结构和双mems芯片封装方法 |
-
2013
- 2013-04-09 CN CN 201320175518 patent/CN203193893U/zh not_active Expired - Lifetime
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104902415A (zh) * | 2015-05-29 | 2015-09-09 | 歌尔声学股份有限公司 | 一种差分电容式mems麦克风 |
CN104902403A (zh) * | 2015-06-30 | 2015-09-09 | 歌尔声学股份有限公司 | 一种mems麦克风 |
CN105072551A (zh) * | 2015-08-20 | 2015-11-18 | 歌尔声学股份有限公司 | Mems麦克风和mems声学传感芯片 |
CN113415781A (zh) * | 2021-06-17 | 2021-09-21 | 甬矽电子(宁波)股份有限公司 | 双mems芯片封装结构和双mems芯片封装方法 |
CN113415781B (zh) * | 2021-06-17 | 2023-05-23 | 甬矽电子(宁波)股份有限公司 | 双mems芯片封装结构和双mems芯片封装方法 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: 261031 Dongfang Road, Weifang high tech Industrial Development Zone, Shandong, China, No. 268 Patentee after: Goertek Inc. Address before: 261031 Dongfang Road, Weifang high tech Industrial Development Zone, Shandong, China, No. 268 Patentee before: Goertek Inc. |
|
TR01 | Transfer of patent right |
Effective date of registration: 20200616 Address after: 266104 room 103, 396 Songling Road, Laoshan District, Qingdao, Shandong Province Patentee after: Goer Microelectronics Co.,Ltd. Address before: 261031 Dongfang Road, Weifang high tech Industrial Development Zone, Shandong, China, No. 268 Patentee before: GOERTEK Inc. |
|
TR01 | Transfer of patent right | ||
CX01 | Expiry of patent term |
Granted publication date: 20130911 |
|
CX01 | Expiry of patent term |