WO2016192121A1 - 自电容式内嵌触摸屏及其制备方法、液晶显示器 - Google Patents

自电容式内嵌触摸屏及其制备方法、液晶显示器 Download PDF

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Publication number
WO2016192121A1
WO2016192121A1 PCT/CN2015/081013 CN2015081013W WO2016192121A1 WO 2016192121 A1 WO2016192121 A1 WO 2016192121A1 CN 2015081013 W CN2015081013 W CN 2015081013W WO 2016192121 A1 WO2016192121 A1 WO 2016192121A1
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Prior art keywords
insulating layer
layer
disposed
touch sensing
pixel electrode
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PCT/CN2015/081013
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English (en)
French (fr)
Inventor
虞晓江
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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Priority to US14/761,857 priority Critical patent/US9651815B2/en
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/13338—Input devices, e.g. touch panels
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0443—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a single layer of sensing electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133302—Rigid substrates, e.g. inorganic substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133357—Planarisation layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G02F1/13685—Top gates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04104—Multi-touch detection in digitiser, i.e. details about the simultaneous detection of a plurality of touching locations, e.g. multiple fingers or pen and finger
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04111—Cross over in capacitive digitiser, i.e. details of structures for connecting electrodes of the sensing pattern where the connections cross each other, e.g. bridge structures comprising an insulating layer, or vias through substrate

Definitions

  • the present invention relates to the field of touch technologies, and in particular, to a self-capacitance embedded touch screen and a method for fabricating the same, and to a liquid crystal display including the embedded touch screen.
  • the touch screen is the simplest and most convenient way of human-computer interaction, so the touch screen is increasingly applied to various electronic products.
  • touch screen products can be divided into four types: infrared touch screen, capacitive touch screen, resistive touch screen and surface acoustic wave touch screen; among them, capacitive touch screen has long life, high light transmittance and can support many Point touch and other advantages have become the mainstream touch screen technology.
  • Capacitive touch screens include surface capacitive and projected capacitive, and the projected capacitive type can be divided into self-capacitance and mutual capacitance. For self-capacitance touch structures, due to the accuracy of their touch sensing and high signal-to-noise ratio, they are favored by major panel manufacturers.
  • the self-capacitive touch structure utilizes the principle of self-capacitance to realize the detection of the finger touch position, specifically: setting a plurality of touch sensing electrodes in the touch structure, and the capacitance sensed by each touch sensing electrode when the human body does not touch the screen For a fixed value, when the human body touches the screen, the capacitance sensed by the touch sensing electrode corresponding to the touch position is affected by the human body, and the touch detection chip detects the change of the capacitance value of each touch sensing electrode during the touch time period. The touch position can be judged.
  • the self-capacitive touch screen structure includes an array of touch sensing electrodes 7 , and each touch sensing electrode 7 needs to pass through A separate metal connection 5 is connected to the touch detection chip (not shown in the drawing).
  • the touch sensing electrode 7 and the metal connecting line 5 are disposed in a different layer with an insulating layer (not shown in the drawing), and the touch sensing electrode 7 and the corresponding metal connecting line 5 are electrically connected through the via.
  • each of the metal connecting wires is not connected to the front touch sensing electrodes before being connected to the corresponding touch sensing electrodes, and the metal connecting wires are not connected after being connected to the corresponding touch sensing electrodes. Continue to connect with the rear touch sensing electrodes.
  • the touch sensing electrodes and the metal connecting lines in the touch screen structure are usually directly disposed on the array substrate or the filter substrate.
  • 2 is a partial structural schematic view of an array substrate having a touch screen structure in the prior art.
  • the array substrate includes a glass substrate 1 , a thin film transistor 2 disposed on the glass substrate 1 , and a pixel electrode 3 electrically connected to the thin film transistor 2 , and a planarization is disposed between the pixel electrode 3 and the thin film transistor 2 .
  • the touch screen structure is disposed on the planarization layer.
  • the metal connection line 5 is first formed on the planarization layer 4, and then the first insulation layer 6 is overlaid on the metal connection line 5, further on the first insulation layer 6.
  • the touch sensing electrode 7 is disposed, the touch sensing electrode 7 is electrically connected to the metal connecting line 5 through the via hole, and finally the second insulating layer 8 is disposed on the touch sensing electrode 7.
  • the first insulating layer 6 and the second insulating layer 8 are sequentially located between the planarization layer 4 and the pixel electrode 3, and the pixel electrode 3 passes through the planarization layer 4, the first insulating layer 6, and the second insulating layer 8.
  • the hole is electrically connected to the thin film transistor 2 (connected to the source or the drain of the thin film transistor 2).
  • the touch sensing electrode 7 is also configured as a common electrode.
  • the touch sensing electrode 7 is used to transmit the common voltage (Vcom) and the touch scan signal in a time-sharing manner within a display time of one frame.
  • the material of the planarization layer 4 is an organic material
  • the material of the metal connection line 5 is a metal material.
  • the high temperature during the deposition process The flattening layer 4 emits gas, and the thickness of the metal connecting wire 5 is small and the thickness is large, so that the adhesion between the metal connecting wire 5 and the planarizing layer 4 is small, and it is easy to fall off, which affects the quality of the product. .
  • the present invention provides a self-capacitive in-cell touch panel, which improves the adhesion between the touch screen structure and the array substrate by improving the structure of the touch screen disposed in the array substrate, thereby improving the product. Quality reduces production costs.
  • a self-capacitive in-cell touch panel includes an array substrate, the array substrate includes a glass substrate, a thin film transistor disposed on the glass substrate, and a pixel electrode electrically connected to the thin film transistor, wherein the pixel electrode and the thin film transistor a flattening layer is disposed, wherein the planarizing layer is sequentially provided with a transparent touch sensing electrode, a first insulating layer, a second insulating layer and a metal connecting line, wherein the metal connecting line is disposed on the first The via holes in an insulating layer and the second insulating layer are electrically connected to the touch sensing electrode; wherein the first insulating layer extends between the planarization layer and the pixel electrode, and the second insulating layer Extending to the pixel electrode, the pixel electrode is disposed on the first The via holes in the edge layer and the planarization layer are electrically connected to the thin film transistor;
  • the touch sensing electrode is further configured as a common electrode, and the touch sensing electrode is configured to transmit a common voltage and a touch scan signal in a time-sharing manner during a display time of one frame.
  • the material of the touch sensing electrode and the pixel electrode is ITO
  • the material of the planarization layer is an organic material
  • the material of the metal connection line is a metal material.
  • the material of the first insulating layer and the second insulating layer is SiN x , SiO x or SiN x O y .
  • the thin film transistor comprises a source, a drain, a gate and an active layer, the active layer is connected to the glass substrate, and the source and the drain are disposed in the same layer and are located in the active layer Upper, the gate is located above the source and the drain; a third insulating layer is disposed between the source and the drain and the active layer, and the source and the drain are respectively disposed through the A via hole in the third insulating layer is connected to the active layer; and a fourth insulating layer is disposed between the source and the drain and the gate.
  • An ohmic contact layer is further disposed between the active layer and the source and the drain.
  • the material of the third insulating layer and the fourth insulating layer is SiN x , SiO x or SiN x O y .
  • the self-capacitive in-cell touch panel further includes a liquid crystal layer disposed opposite to the array substrate and disposed between the array substrate and the filter substrate.
  • the method for preparing a self-capacitance in-cell touch panel includes the steps of preparing an array substrate, wherein the preparation process of the array substrate comprises:
  • a metal connection line is formed on the second insulating layer, and the metal connection line is electrically connected to the touch sensing electrode through the second via hole.
  • a liquid crystal display including a liquid crystal display and a backlight module.
  • the liquid crystal display is disposed opposite to the backlight module, and the backlight module provides a display light source to the liquid crystal display.
  • the liquid crystal display adopts a self-capacitive in-cell touch screen as described above.
  • the self-capacitance in-cell touch panel provided in the embodiment of the present invention has a touch screen structure disposed in the array substrate with the touch screen embedded therein, wherein the touch screen structure includes a touch sensing electrode, a first insulating layer, and a first layer formed on the planarization layer.
  • the two insulating layers and the metal connecting wires have a larger width and a smaller thickness than the metal connecting wires, and the high temperature during the deposition process causes the gas discharged from the planarizing layer to touch the sensing electrodes and the planarization layer.
  • the influence of the adhesion between the two is small, and the problem of small adhesion when the metal connecting wire is first prepared in the prior art is improved, the quality of the product is improved, and the production cost is lowered.
  • the second insulating layer also isolates the metal connection lines from the pixel electrodes, thereby avoiding a short circuit between the metal connection lines and the pixel electrodes.
  • FIG. 1 is a schematic diagram of electrode distribution of a conventional self-capacitive touch screen structure.
  • FIG. 2 is a partial structural schematic view of an array substrate having a touch screen structure in the prior art.
  • FIG. 3 is a schematic structural diagram of a capacitive in-cell touch panel provided by an embodiment of the present invention.
  • FIG. 4 is a partial structural diagram of an array substrate with a touch screen structure according to an embodiment of the present invention.
  • FIG. 5 is a schematic structural diagram of a liquid crystal display according to an embodiment of the present invention.
  • the embedded touch screen includes an array substrate 30 and a filter substrate 40 disposed opposite to each other, and a liquid crystal layer 50 disposed between the array substrate 30 and the filter substrate 40 .
  • the touch screen structure is embedded in the array substrate 30.
  • the array substrate 30 includes a glass substrate 1 and a thin film transistor 2 disposed on the glass substrate 1.
  • the thin film transistor 2 is covered with a planarization layer 4.
  • the pixel electrode 3 and the touch screen structure are respectively disposed on the planarization layer 4 and insulated from each other.
  • the touch screen structure includes the touch sensing electrodes 7 and the metal connecting lines 5 disposed on different layers. First, the touch sensing electrodes 7 are formed on the planarization layer 4 by a deposition process, and then the touch sensing electrodes 7 are sequentially disposed on the touch sensing electrodes 7.
  • An insulating layer 6 and a second insulating layer 8 are finally provided with a metal connecting line 5 on the second insulating layer 8, wherein the metal connecting line 5 passes through the via holes provided in the first insulating layer 6 and the second insulating layer 8 It is connected to the touch sensing electrode 7.
  • the first insulating layer 6 extends between the planarization layer 4 and the pixel electrode 3
  • the second insulating layer 8 extends onto the pixel electrode 3
  • the pixel electrode 3 is disposed in the first insulating layer 6 and the planarization layer 4
  • the via is electrically connected to the thin film transistor 2 (connected to the source or the drain of the thin film transistor 2), and the second insulating layer 8 functions to insulate the metal connecting line 5 and the pixel electrode 3, thereby avoiding the metal connecting line 5.
  • a short circuit occurs between the pixel electrode 3.
  • the touch sensing electrode 7 is further configured as a common electrode, and the touch sensing electrode 7 is configured to transmit a common voltage (Vcom) and a touch scan signal in a time-sharing manner during a display time of one frame.
  • Vcom common voltage
  • the material of the touch sensing electrode 7 and the pixel electrode 3 is made of a transparent conductive material, for example, ITO can be selected.
  • the material of the planarization layer 4 is an organic material, and the material of the metal connection line 5 is a metal material, which may be composed of a plurality of metal materials, for example, may be a three-layer metal material of Mo/Al/Mo.
  • the touch screen structure includes the touch sensing electrodes 7, the first insulating layer 6, the second insulating layer 8 and the metal connecting lines 5 which are sequentially formed on the planarizing layer 4, since the touch sensing electrodes 7 With a larger width and a smaller thickness than the metal connection line 5, the high temperature during the deposition process causes the gas released by the planarization layer 4 to have less influence on the adhesion between the touch sensing electrode 7 and the planarization layer 4, The problem of small adhesion when the metal connecting wire 5 is first prepared in the prior art is improved, the quality of the product is improved, and the production cost is lowered.
  • the thin film transistor 2 includes a source 21, a drain 22, a gate 23 and an active layer 24, and the active layer 24 is connected to the glass substrate 1, the source The pole 21 and the drain 22 are disposed in the same layer and above the active layer 24, and the gate 23 is located above the source 21 and the drain 22.
  • a third insulating layer 9 is disposed between the source 21 and the drain 22 and the active layer 24, and the source 21 and the drain 22 respectively pass through vias disposed in the third insulating layer 9.
  • a fourth insulating layer 10 is disposed between the source 21 and the drain 22 and the gate 23.
  • the pixel electrode 3 is electrically connected to the thin film crystal through a via hole disposed in the first insulating layer 6 and the planarization layer 4 The drain 22 of the body tube 2.
  • the active layer 24 and the source 21 and the drain 22 are further disposed.
  • the specific material of the ohmic contact layer 25 and the ohmic contact layer 25 is N+Si.
  • the materials of the first insulating layer 6 and the second insulating layer 8 may be selected as SiN x , SiO x or SiN x O y ; the third insulating layer 9 and the fourth insulating layer
  • the material of 10 can also be selected as SiN x , SiO x or SiN x O y .
  • the preparation process of the array substrate 30 mainly includes the steps of:
  • a glass substrate 1 is provided and an array of thin film transistors 2 is prepared on the glass substrate 1.
  • the preparation process of this step can also be understood by first forming a common electrode layer film on the planarization layer 4 by a deposition process, and then performing photolithography.
  • the common electrode, the touch sensing electrode 7 is used to transmit the common voltage (Vcom) and the touch scan signal in a time-sharing manner during the display time of one frame.
  • the first insulating layer 6 covers the touch sensing electrode 7 and the planarization layer 4 .
  • a first via hole is formed in the first insulating layer 6 and the planarization layer 4 corresponding to the upper side of the thin film transistor 2.
  • the first via hole is mainly prepared by a photolithography process.
  • a pixel electrode 3 on the first insulating layer 6, and the pixel electrode 3 is electrically connected to the thin film transistor 2 through the first via.
  • a thin film layer of the pixel electrode 3 is formed on the first insulating layer 6 by a deposition process, and then the patterned pixel electrode 3 is obtained by a photolithography process.
  • the second insulating layer 8 covers the pixel electrode 3 and the first insulating layer 6, and is prepared by a photolithography process to obtain a first via.
  • a metal connection line 5 is formed on the second insulating layer 8, and the metal connection line 5 is electrically connected to the touch sensing electrode 7 through the second via.
  • a thin film layer of the metal connecting line 5 is formed on the second insulating layer 8 by a deposition process, and then the patterned metal connecting line 5 is obtained by a photolithography process.
  • the present embodiment further provides a liquid crystal display including the self-capacitance embedded touch screen 100 and the backlight module 200 as described above, and the embedded touch screen 100 is disposed opposite to the backlight module 200, and the backlight is disposed.
  • the module 200 provides a display light source to the inline touch screen 100 to cause the inline touch screen 100 to display an image.
  • the self-capacitance in-cell touch panel provided in the embodiment of the present invention has a touch screen structure disposed in the array substrate with the touch screen embedded therein, wherein the touch screen structure includes a touch sensing electrode sequentially formed on the planarization layer, An insulating layer, a second insulating layer and a metal connecting line, because the touch sensing electrode has a larger width and a smaller thickness than the metal connecting line, the high temperature during the deposition process causes the flat layer to emit gas to the touch sensing
  • the influence of the adhesion between the electrode and the planarization layer is small, which improves the problem of small adhesion when the metal connection wire is first prepared in the prior art, improves the quality of the product, and reduces the production cost.
  • the second insulating layer also isolates the metal connection lines from the pixel electrodes, thereby avoiding a short circuit between the metal connection lines and the pixel electrodes.

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Abstract

一种自电容式内嵌触摸屏及其制备方法，以及包含该内嵌触摸屏的液晶显示器。该触摸屏包括阵列基板（30），该阵列基板（30）包括玻璃基板（1）以及设置在玻璃基板（1）上的薄膜晶体管（2）和与薄膜晶体管（2）电性连接的像素电极（3），像素电极（3）与薄膜晶体管（2）之间设置有平坦化层（4），其中，平坦化层（4）上还依次设置有透明的触控感应电极（7）、第一绝缘层（6）、第二绝缘层（8）以及金属连接线（5），金属连接线（5）通过过孔电性连接到触控感应电极（7）；其中，第一绝缘层（6）延伸至平坦化层（4）与像素电极（3）之间，第二绝缘层（8）延伸至像素电极（3）上；其中，触控感应电极（7）还被配置为公共电极，在一帧画面的显示时间内，触控感应电极（7）用于分时地传递公共电压Vcom和触摸扫描信号。

Description

自电容式内嵌触摸屏及其制备方法、液晶显示器 技术领域
本发明涉及触控技术领域,尤其涉及一种自电容式内嵌触摸屏及其制备方法，还涉及包含该内嵌触摸屏的液晶显示器。
背景技术
触摸显示屏作为一种输入媒介,是目前最简单、方便的一种人机交互方式，因此触摸显示屏越来越多地应用到各种电子产品中。基于不同的工作原理以及传输信息的介质，触摸屏产品可以分为四种：红外线触摸屏、电容式触摸屏、电阻触摸屏和表面声波触摸屏；其中电容式触摸屏由于具有寿命长、透光率高、可以支持多点触控等优点成为目前主流的触摸屏技术。电容式触摸屏包括表面电容式和投射电容式，其中投射电容式又可以分为自电容式和互电容式。对于自电容触摸结构，由于其触控感应的准确度和信噪比比较高，因而受到了各大面板厂家青睐。
目前，自电容式触摸结构利用自电容的原理实现检测手指触摸位置，具体为：在触摸结构中设置多个触控感应电极，当人体未触碰屏幕时，各触控感应电极所感知的电容为一固定值，当人体触碰屏幕时，触碰位置对应的触控感应电极所感知的电容受人体影响，触控侦测芯片在触控时间段通过检测各触控感应电极的电容值变化可以判断出触控位置。
图1为现有的一种自电容式触摸屏结构的电极分布示意图，如图1所示的，该自电容式触摸屏结构包括阵列设置的触控感应电极7，每一个触控感应电极7需要通过单独的金属连接线5与触控侦测芯片(附图中未示出)连接。其中，触控感应电极7和金属连接线5为具有绝缘层(附图中未示出)隔离的异层设置，触控感应电极7与对应的金属连接线5通过过孔电性连接。具体地，对于一列触控感应电极，每根金属连接线连接到相应的触控感应电极前均不与前面的触控感应电极相连，连接到相应的触控感应电极后该金属连接线将不与后面的触控感应电极继续连接。
对于自电容式内嵌(in-cell)触摸屏，通常是将触摸屏结构中的触控感应电极和金属连接线直接设置在阵列基板或滤光基板上。图2是现有的一种具有触摸屏结构的阵列基板的局部结构示意图。如图2所示，该阵列基板包括玻璃基板1以及设置在玻璃基板1上的薄膜晶体管2和与薄膜晶体管2电性连接的像素电极3，像素电极3与薄膜晶体管2之间设置有平坦化层4。触摸屏结构设置在平坦化层上，具体为：首先在平坦化层4上制备形成金属连接线5，然后在金属连接线5上覆设第一绝缘层6，进一步地在第一绝缘层6上设置触控感应电极7，触控感应电极7通过过孔电性连接到金属连接线5，最后在触控感应电极7上覆设第二绝缘层8。其中第一绝缘层6和第二绝缘层8依次位于平坦化层4与像素电极3之间，像素电极3通过设置于平坦化层4、第一绝缘层6和第二绝缘层8中的过孔电性连接到薄膜晶体管2(连接到薄膜晶体管2的源极或漏极)。其中，触控感应电极7还被配置为公共电极，在一帧画面的显示时间内，所述触控感应电极7用于分时地传递公共电压(Vcom)和触摸扫描信号。
在如上结构的阵列基板中，平坦化层4的材料为有机材料，金属连接线5的材料为金属材料，通过沉积工艺在平坦化层4上制备金属连接线5时，沉积工艺时的高温会使平坦化层4放出气体，而由于金属连接线5的宽度较小而厚度较大，因此导致金属连接线5与平坦化层4之间的附着力较小，易于脱落，影响了产品的品质。
发明内容
鉴于现有技术存在的不足，本发明提供了一种自电容式内嵌触摸屏，通过对设置于阵列基板中的触摸屏结构进行改进，改善了触摸屏结构与阵列基板之间的附着力，提升了产品的品质，降低了生产成本。
为了实现上述目的，本发明采用了如下的技术方案：
一种自电容式内嵌触摸屏，包括阵列基板，所述阵列基板包括玻璃基板以及设置在玻璃基板上的薄膜晶体管和与薄膜晶体管电性连接的像素电极，所述像素电极与所述薄膜晶体管之间设置有平坦化层，其中，所述平坦化层上依次设置有透明的触控感应电极、第一绝缘层、第二绝缘层以及金属连接线，所述金属连接线通过设置于所述第一绝缘层和第二绝缘层中的过孔电性连接到所述触控感应电极；其中，所述第一绝缘层延伸至所述平坦化层与所述像素电极之间，第二绝缘层延伸至所述像素电极上，所述像素电极通过设置于所述第一绝 缘层和平坦化层中的过孔电性连接到所述薄膜晶体管；
其中，所述触控感应电极还被配置为公共电极，在一帧画面的显示时间内，所述触控感应电极用于分时地传递公共电压和触摸扫描信号。
其中，所述触控感应电极和所述像素电极的材料为ITO，所述平坦化层的材料为有机材料，所述金属连接线的材料为金属材料。
其中，所述第一绝缘层和所述第二绝缘层的材料为SiNx、SiOx或SiNxOy。
其中，所述薄膜晶体管包括源极、漏极、栅极和有源层，所述有源层连接于所述玻璃基板上，所述源极和漏极同层设置且位于所述有源层上方，所述栅极位于所述源极和漏极上方；所述源极和漏极与所述有源层之间设置有第三绝缘层，所述源极和漏极分别通过设置于所述第三绝缘层中的过孔连接到所述有源层；所述源极和漏极与所述栅极之间设置有第四绝缘层。
其中，所述有源层与所述源极、漏极之间还设置有欧姆接触层。
其中，所述第三绝缘层和所述第四绝缘层的材料为SiNx、SiOx或SiNxOy。
其中，该自电容式内嵌触摸屏还包括与所述阵列基板相对设置滤光基板以及设置于所述阵列基板和所述滤光基板之间的液晶层。
如上提供的自电容式内嵌触摸屏的制备方法，包括制备阵列基板的步骤，其中，所述阵列基板的制备工艺包括：
S10、提供一玻璃基板并在玻璃基板上制备薄膜晶体管阵列；
S20、在具有薄膜晶体管阵列的玻璃基板上形成一平坦化层；
S30、在所述平坦化层上形成透明的触控感应电极；
S40、在具有触控感应电极的平坦化层上形成第一绝缘层；
S50、在所述第一绝缘层和平坦化层中对应于所述薄膜晶体管的上方开设第一过孔；
S60、在所述第一绝缘层上形成像素电极，所述像素电极通过所述第一过孔电性连接到所述薄膜晶体管；
S70、在具有像素电极的第一绝缘层上形成第二绝缘层，并在所述第一绝缘层和第二绝缘层中对应于所述触控感应电极的上方开设第二过孔；
S80、在所述第二绝缘层上形成金属连接线，所述金属连接线通过所述第二过孔电性连接到所述触控感应电极。
本发明的另一方面是提供一种液晶显示器，包括液晶显示屏及背光模组，所述液晶显示屏与所述背光模组相对设置，所述背光模组提供显示光源给所述液晶显示屏，以使所述液晶显示屏显示影像，其中，所述液晶显示屏采用如上所述的自电容式内嵌触摸屏。
本发明实施例中提供的自电容式内嵌触摸屏，内嵌触摸屏的阵列基板中设置有触摸屏结构，其中的触摸屏结构包括依次形成在平坦化层上的触控感应电极、第一绝缘层、第二绝缘层和金属连接线，由于触控感应电极相对于金属连接线具有更大的宽度和更小的厚度，沉积工艺时的高温使平坦化层放出的气体对触控感应电极与平坦化层之间的附着力影响较小，改善了现有技术中先制备金属连接线时附着力小的问题，提升了产品的品质，降低了生产成本。另外，第二绝缘层还隔离了金属连接线与像素电极，避免了金属连接线与像素电极之间发生短路。
附图说明
图1是现有的一种自电容式触摸屏结构的电极分布示意图。
图2是现有的一种具有触摸屏结构的阵列基板的局部结构示意图。
图3是本发明实施例提供的电容式内嵌触摸屏的结构示意图。
图4是本发明实施例提供的具有触摸屏结构的阵列基板的局部结构示意图。
图5是本发明实施例提供的液晶显示器的结构示意图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行详细地描述，显然，所描述的实施例仅仅是本发明一部分实例，而不是全部实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护范围。
本实施例首先提供了一种自电容式内嵌触摸屏。如图3所示，该嵌触摸屏包括相对设置的阵列基板30和滤光基板40以及设置于阵列基板30和滤光基板40之间的液晶层50。其中，触摸屏结构内嵌于阵列基板30中。
具体地，如图4所示，阵列基板30包括玻璃基板1以及设置在玻璃基板1上的薄膜晶体管2，薄膜晶体管2上覆设有一平坦化层4。像素电极3和触摸屏结构分别设置于平坦化层4上并且相互绝缘。具体地，触摸屏结构包括异层设置的触控感应电极7和金属连接线5，首先在平坦化层4上通过沉积工艺制备出触控感应电极7，然后在触控感应电极7上依次设置第一绝缘层6和第二绝缘层8，最后在第二绝缘层8上设置金属连接线5，其中，金属连接线5通过设置于第一绝缘层6和第二绝缘层8中的过孔电性连接到触控感应电极7。进一步地，第一绝缘层6延伸至平坦化层4与像素电极3之间，第二绝缘层8延伸至像素电极3上，像素电极3通过设置于第一绝缘层6和平坦化层4中的过孔电性连接到薄膜晶体管2(连接到薄膜晶体管2的源极或漏极)，第二绝缘层8起到绝缘隔离金属连接线5与像素电极3的作用，避免了金属连接线5与像素电极3之间发生短路。进一步地，所述触控感应电极7还被配置为公共电极，在一帧画面的显示时间内，所述触控感应电极7用于分时地传递公共电压(Vcom)和触摸扫描信号。
其中，所述触控感应电极7和所述像素电极3的材料采用透明导电材料，例如可以选择为ITO。所述平坦化层4的材料为有机材料，所述金属连接线5的材料为金属材料，其可以是多层金属材料组成，例如可以是依次为Mo/Al/Mo三层金属材料。
如上结构的阵列基板中，其中的触摸屏结构包括依次形成在平坦化层4上的触控感应电极7、第一绝缘层6、第二绝缘层8和金属连接线5，由于触控感应电极7相对于金属连接线5具有更大的宽度和更小的厚度，沉积工艺时的高温使平坦化层4放出的气体对触控感应电极7与平坦化层4之间的附着力影响较小，改善了现有技术中先制备金属连接线5时附着力小的问题，提升了产品的品质，降低了生产成本。
其中，如图4所示的，所述薄膜晶体管2包括源极21、漏极22、栅极23和有源层24，所述有源层24连接于所述玻璃基板1上，所述源极21和漏极22同层设置且位于所述有源层24上方，所述栅极23位于所述源极21和漏极22上方。所述源极21和漏极22与所述有源层24之间设置有第三绝缘层9，所述源极21和漏极22分别通过设置于所述第三绝缘层9中的过孔连接到所述有源层24，所述源极21和漏极22与所述栅极23之间设置有第四绝缘层10。其中，像素电极3通过设置于第一绝缘层6和平坦化层4中的过孔电性连接到薄膜晶 体管2的漏极22。
进一步地，为了使所述源极21和漏极22与所述有源层24之间具有良好的电接触，所述有源层24与所述源极21、漏极22之间还设置有欧姆接触层25，欧姆接触层25的具体材料为N+Si。
进一步地，在本实施例中，所述第一绝缘层6和所述第二绝缘层8的材料可以选择为SiNx、SiOx或SiNxOy；第三绝缘层9和第四绝缘层10的材料也是可以选择为SiNx、SiOx或SiNxOy。
更具体地，阵列基板30的制备工艺主要包括步骤：
S10、提供一玻璃基板1并在玻璃基板1上制备薄膜晶体管2阵列。
S20、在具有薄膜晶体管2阵列的玻璃基板1上形成一平坦化层4。
S30、在所述平坦化层4上形成透明的触控感应电极7。其中，首先是通过沉积工艺在平坦化层4上形成触控感应电极7的薄膜层，然后再通过光刻工艺获得图形化的触控感应电极7。更具体地，由于触控感应电极7还被配置为公共电极，因此该步骤的制备工艺中也可以这样理解：首先通过沉积工艺在平坦化层4上形成公共电极层薄膜，然后再通过光刻工艺，将公共电极层薄膜分割形成多个图形化的触控感应电极7(附图中仅示出了其中的一个)，因此，位于同一结构层中的多个触控感应电极7可以作为显示的公共电极，在一帧画面的显示时间内，触控感应电极7用于分时地传递公共电压(Vcom)和触摸扫描信号。
S40、在具有触控感应电极7的平坦化层4上形成第一绝缘层6。其中，第一绝缘层6覆盖触控感应电极7和平坦化层4。
S50、在所述第一绝缘层6和平坦化层4中对应于所述薄膜晶体管2的上方开设第一过孔。其中，主要通过光刻工艺制备获得第一过孔。
S60、在所述第一绝缘层6上形成像素电极3，所述像素电极3通过所述第一过孔电性连接到所述薄膜晶体管2。其中，首先是通过沉积工艺在第一绝缘层6上形成像素电极3的薄膜层，然后再通过光刻工艺获得图形化的像素电极3。
S70、在具有像素电极3的第一绝缘层6上形成第二绝缘层8，并在所述第一绝缘层6和第二绝缘层8中对应于所述触控感应电极7的上方开设第二过孔。第二绝缘层8覆盖像素电极3和第一绝缘层6，并且通过光刻工艺制备获得第一过孔。
S80、在所述第二绝缘层8上形成金属连接线5，所述金属连接线5通过所述第二过孔电性连接到所述触控感应电极7。其中，首先是通过沉积工艺在第二绝缘层8上形成金属连接线5的薄膜层，然后再通过光刻工艺获得图形化的金属连接线5。
如图5中，本实施例还提供了一种液晶显示器，其包括如上所述的自电容式内嵌触摸屏100以及背光模组200，内嵌触摸屏100与背光模组200相对设置，所述背光模组200提供显示光源给所述内嵌触摸屏100，以使所述内嵌触摸屏100显示影像。
综上所述，本发明实施例中提供的自电容式内嵌触摸屏，内嵌触摸屏的阵列基板中设置有触摸屏结构，其中的触摸屏结构包括依次形成在平坦化层上的触控感应电极、第一绝缘层、第二绝缘层和金属连接线，由于触控感应电极相对于金属连接线具有更大的宽度和更小的厚度，沉积工艺时的高温使平坦化层放出的气体对触控感应电极与平坦化层之间的附着力影响较小，改善了现有技术中先制备金属连接线时附着力小的问题，提升了产品的品质，降低了生产成本。另外，第二绝缘层还隔离了金属连接线与像素电极，避免了金属连接线与像素电极之间发生短路。
需要说明的是，在本文中，诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来，而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。
以上所述仅是本申请的具体实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本申请原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本申请的保护范围。

Claims (17)

  1. 一种自电容式内嵌触摸屏，包括阵列基板，所述阵列基板包括玻璃基板以及设置在玻璃基板上的薄膜晶体管和与薄膜晶体管电性连接的像素电极，所述像素电极与所述薄膜晶体管之间设置有平坦化层，其中，所述平坦化层上还依次设置有透明的触控感应电极、第一绝缘层、第二绝缘层以及金属连接线，所述金属连接线通过设置于所述第一绝缘层和第二绝缘层中的过孔电性连接到所述触控感应电极；其中，所述第一绝缘层延伸至所述平坦化层与所述像素电极之间，第二绝缘层延伸至所述像素电极上，所述像素电极通过设置于所述第一绝缘层和平坦化层中的过孔电性连接到所述薄膜晶体管；
    其中，所述触控感应电极还被配置为公共电极，在一帧画面的显示时间内，所述触控感应电极用于分时地传递公共电压和触摸扫描信号。
  2. 根据权利要求1所述的自电容式内嵌触摸屏，其中，所述触控感应电极和所述像素电极的材料为ITO，所述平坦化层的材料为有机材料，所述金属连接线的材料为金属材料。
  3. 根据权利要求1所述的自电容式内嵌触摸屏，其中，所述第一绝缘层和所述第二绝缘层的材料为SiNx、SiOx或SiNxOy。
  4. 根据权利要求1所述的自电容式内嵌触摸屏，其中，所述薄膜晶体管包括源极、漏极、栅极和有源层，所述有源层连接于所述玻璃基板上，所述源极和漏极同层设置且位于所述有源层上方，所述栅极位于所述源极和漏极上方；所述源极和漏极与所述有源层之间设置有第三绝缘层，所述源极和漏极分别通过设置于所述第三绝缘层中的过孔连接到所述有源层；所述源极和漏极与所述栅极之间设置有第四绝缘层。
  5. 根据权利要求4所述的自电容式内嵌触摸屏，其中，所述有源层与所述源极、漏极之间还设置有欧姆接触层。
  6. 根据权利要求4所述的自电容式内嵌触摸屏，其中，所述第三绝缘层和所述第四绝缘层的材料为SiNx、SiOx或SiNxOy。
  7. 根据权利要求1所述的自电容式内嵌触摸屏，其中，该自电容式内嵌触摸屏还包括与所述阵列基板相对设置滤光基板以及设置于所述阵列基板和所述滤光基板之间的液晶层。
  8. 一种自电容式内嵌触摸屏的制备方法，包括制备阵列基板的步骤，其中，所述阵列基板的制备工艺包括：
    S10、提供一玻璃基板并在玻璃基板上制备薄膜晶体管阵列；
    S20、在具有薄膜晶体管阵列的玻璃基板上形成一平坦化层；
    S30、在所述平坦化层上形成透明的触控感应电极；
    S40、在具有触控感应电极的平坦化层上形成第一绝缘层；
    S50、在所述第一绝缘层和平坦化层中对应于所述薄膜晶体管的上方开设第一过孔；
    S60、在所述第一绝缘层上形成像素电极，所述像素电极通过所述第一过孔电性连接到所述薄膜晶体管；
    S70、在具有像素电极的第一绝缘层上形成第二绝缘层，并在所述第一绝缘层和第二绝缘层中对应于所述触控感应电极的上方开设第二过孔；
    S80、在所述第二绝缘层上形成金属连接线，所述金属连接线通过所述第二过孔电性连接到所述触控感应电极。
  9. 根据权利要求8所述的自电容式内嵌触摸屏的制备方法，其中，所述触控感应电极和所述像素电极的材料为ITO，所述平坦化层的材料为有机材料，所述金属连接线的材料为金属材料。
  10. 根据权利要求8所述的自电容式内嵌触摸屏的制备方法，其中，所述第一绝缘层和所述第二绝缘层的材料为SiNx、SiOx或SiNxOy。
  11. 一种液晶显示器，包括液晶显示屏及背光模组，所述液晶显示屏与所述背光模组相对设置，所述背光模组提供显示光源给所述液晶显示屏，以使所述液晶显示屏显示影像；
    其中，所述液晶显示屏为自电容式内嵌触摸屏，该自电容式内嵌触摸屏包括阵列基板，所述阵列基板包括玻璃基板以及设置在玻璃基板上的薄膜晶体管和与薄膜晶体管电性连接的像素电极，所述像素电极与所述薄膜晶体管之间设置有平坦化层，其中，所述平坦化层上还依次设置有透明的触控感应电极、第一绝缘层、第二绝缘层以及金属连接线，所述金属连接线通过设置于所述第一绝缘层和第二绝缘层中的过孔电性连接到所述触控感应电极；其中，所述第一 绝缘层延伸至所述平坦化层与所述像素电极之间，第二绝缘层延伸至所述像素电极上，所述像素电极通过设置于所述第一绝缘层和平坦化层中的过孔电性连接到所述薄膜晶体管；
    其中，所述触控感应电极还被配置为公共电极，在一帧画面的显示时间内，所述触控感应电极用于分时地传递公共电压和触摸扫描信号。
  12. 根据权利要求11所述的液晶显示器，其中，所述触控感应电极和所述像素电极的材料为ITO，所述平坦化层的材料为有机材料，所述金属连接线的材料为金属材料。
  13. 根据权利要求11所述的液晶显示器，其中，所述第一绝缘层和所述第二绝缘层的材料为SiNx、SiOx或SiNxOy。
  14. 根据权利要求11所述的液晶显示器，其中，所述薄膜晶体管包括源极、漏极、栅极和有源层，所述有源层连接于所述玻璃基板上，所述源极和漏极同层设置且位于所述有源层上方，所述栅极位于所述源极和漏极上方；所述源极和漏极与所述有源层之间设置有第三绝缘层，所述源极和漏极分别通过设置于所述第三绝缘层中的过孔连接到所述有源层；所述源极和漏极与所述栅极之间设置有第四绝缘层。
  15. 根据权利要求14所述的液晶显示器，其中，所述有源层与所述源极、漏极之间还设置有欧姆接触层。
  16. 根据权利要求14所述的液晶显示器，其中，所述第三绝缘层和所述第四绝缘层的材料为SiNx、SiOx或SiNxOy。
  17. 根据权利要求11所述的液晶显示器，其中，该自电容式内嵌触摸屏还包括与所述阵列基板相对设置滤光基板以及设置于所述阵列基板和所述滤光基板之间的液晶层。
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CN104022127A (zh) * 2014-05-30 2014-09-03 京东方科技集团股份有限公司 一种阵列基板及其制作方法、以及显示装置
CN104503619A (zh) * 2014-12-31 2015-04-08 深圳市华星光电技术有限公司 一种阵列基板的制造方法及触摸屏
CN104571765A (zh) * 2015-01-09 2015-04-29 京东方科技集团股份有限公司 一种内嵌式触摸屏及显示装置

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