WO2016188397A1 - 旋转空心正方柱与旋转三角柱二维正方晶格光子晶体 - Google Patents

旋转空心正方柱与旋转三角柱二维正方晶格光子晶体 Download PDF

Info

Publication number
WO2016188397A1
WO2016188397A1 PCT/CN2016/083063 CN2016083063W WO2016188397A1 WO 2016188397 A1 WO2016188397 A1 WO 2016188397A1 CN 2016083063 W CN2016083063 W CN 2016083063W WO 2016188397 A1 WO2016188397 A1 WO 2016188397A1
Authority
WO
WIPO (PCT)
Prior art keywords
rotating
refractive index
square
square column
column
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2016/083063
Other languages
English (en)
French (fr)
Inventor
欧阳征标
陈治良
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen University
Original Assignee
Shenzhen University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen University filed Critical Shenzhen University
Publication of WO2016188397A1 publication Critical patent/WO2016188397A1/zh
Priority to US15/822,236 priority Critical patent/US10094979B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/1225—Basic optical elements, e.g. light-guiding paths comprising photonic band-gap structures or photonic lattices
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
    • G02B1/005—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials made of photonic crystals or photonic band gap materials
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/1213—Constructional arrangements comprising photonic band-gap structures or photonic lattices

Definitions

  • the present invention relates to a wide absolute forbidden band two-dimensional photonic crystal, and more particularly to a two-dimensional square lattice photonic crystal of a rotating hollow square pillar and a rotating triangular prism.
  • a photonic crystal is a material structure in which a dielectric material is periodically arranged in a space, and is usually an artificial crystal composed of two or more materials having different dielectric constants.
  • Photonic crystals with absolute forbidden bands can change the interaction of the field with matter by controlling spontaneous emission and improve the performance of the optics. These photonic crystals can be used in semiconductor lasers, solar cells, high quality resonators and filters.
  • a large photonic band gap can be used to fabricate: optical waveguides, liquid crystal photonic crystal fibers, negative refractive index imaging, defect mode photonic crystal lasers, and defect cavities.
  • Large photonic crystals are absolutely forbidden to suppress spontaneous emission in defect mode photonic crystal lasers, especially in the case of a wide range of spontaneous emission spectra. If we want to obtain a photonic crystal resonator with a narrow resonant peak, a larger photonic crystal must be absolutely forbidden.
  • the absolute band gap of polarization-independent photonic crystals is very important. It is precisely because many devices of photonic crystals use photonic band gaps, scientists all over the world have sought to design photonic crystal structures with larger absolute forbidden bands.
  • the rotating hollow square pillar and the rotating triangular prism two-dimensional square lattice photonic crystal of the present invention comprises a high refractive index dielectric column and a low refractive index background dielectric column; the photonic crystal structure is formed by cells in a square lattice; the square The cell of the lattice photonic crystal is composed of a high refractive index rotating hollow square column, a high refractive index rotating triangular prism and a background medium; the outer contour line of the hollow square column is a first rotating square column; the hollow portion of the hollow square column
  • the cross section of the high-refraction rotating triangle column is a right-angled triangle, which is located at a hollow portion of the square column; the triangular column is a four right-angled triangular column; the apex of the four triangular columns is the first a three-rotation square column; the four triangular oblique line junctions are a rotating square column; the lattice constant of the square lattice photonic crystal
  • the high refractive index medium is silicon, gallium arsenide, titanium dioxide or a high refractive index medium having a refractive index greater than 2.
  • the high refractive index dielectric material is silicon and has a refractive index of 3.4.
  • the background medium is a low refractive index medium.
  • the low refractive index background medium is air, vacuum, magnesium fluoride, silicon dioxide or a medium having a refractive index lower than 1.6.
  • the high refractive index dielectric material is silicon, the low refractive index dielectric material is air;
  • the first rotating square column has a rotation angle of 45° ⁇ 60°, and a side length of 0.56a ⁇ b ⁇ 0.7a;
  • the rotation angle of the second rotating square column is 30° ⁇ 55°, and the side length thereof is 0.276a ⁇ c ⁇ 0.49a;
  • the rotation angle of the third rotating square column is 40° ⁇ 55°,
  • the side length is 0.188a ⁇ d ⁇ 0.3472a;
  • the rotation angle of the fourth rotating square column is 26° ⁇ 50°, and the side length is 0.173a ⁇ e ⁇ 0.382a;
  • the absolute forbidden band of the photonic crystal structure is relative The value is greater than 10%.
  • the high refractive index dielectric material is silicon, and the low refractive index dielectric material is air;
  • the rotation angle ⁇ of the first rotating square column is 55.9°, and the side length b is 0.69a;
  • the second rotating square pillar The rotation angle ⁇ is 30.2°, and the side length c is 0.4692a;
  • the third The rotation angle ⁇ of the rotating square column is 54.2°, and the side length d is 0.34627a;
  • the rotation angle ⁇ of the fourth rotating square column is 26.7°, and the side length e is 0.36358a;
  • the photonic crystal structure is absolutely forbidden.
  • the relative value of the band is 18.936%.
  • the rotating hollow square column and the rotating triangular prism two-dimensional square lattice photonic crystal of the invention can be widely used in the design of large-scale integrated optical paths. Compared with the prior art, it has the following advantages:
  • the photonic crystal structure of the present invention has a very large absolute band gap, which can bring greater convenience and flexibility to the design and manufacture of a photonic crystal device.
  • the optical path is easy to connect and couple between different optical devices and between different optical paths.
  • the square lattice structure can make the optical path simple and easy to improve the integration of the optical path.
  • FIG. 1 is a schematic view showing the cell structure of a two-dimensional square lattice photonic crystal of a rotating hollow square column and a rotating triangular prism according to the present invention.
  • Figure 2 is a cross-sectional view showing the structure of the parameter taken by the auxiliary line shown in Figure 1.
  • FIG. 3 is a structural diagram of a photonic band corresponding to the cell parameter value of Embodiment 1.
  • FIG. 3 is a structural diagram of a photonic band corresponding to the cell parameter value of Embodiment 1.
  • FIG. 4 is a structural diagram of a photonic band corresponding to the cell parameter value in the second embodiment.
  • FIG. 5 is a structural diagram of a photonic band corresponding to the cell parameter value in Embodiment 3.
  • FIG. 5 is a structural diagram of a photonic band corresponding to the cell parameter value in Embodiment 3.
  • FIG. 6 is a structural diagram of a photonic band corresponding to the cell parameter value of Embodiment 4.
  • FIG. 7 is a structural diagram of a photonic band corresponding to the cell parameter value of Embodiment 5.
  • FIG. 8 is a structural diagram of a photonic band corresponding to the cell parameter value of Embodiment 6.
  • FIG. 9 is a structural diagram of a photonic band corresponding to the value of the cell parameter in the seventh embodiment.
  • FIG. 10 is a structural diagram of a photonic band corresponding to the cell parameter value of Embodiment 8.
  • FIG. 11 is a structural diagram of a photonic band corresponding to the cell parameter value of Embodiment 9.
  • FIG. 12 is a structural diagram of a photonic band corresponding to the cell parameter value in Embodiment 10.
  • Figure 13 is a diagram showing the structure of a photonic band corresponding to the cell parameter value in the eleventh embodiment.
  • Figure 14 is a diagram showing the structure of a photonic band corresponding to the cell parameter value of the embodiment 12.
  • Fig. 15 is a view showing the structure of a photonic band corresponding to the value of the cell parameter in the thirteenth embodiment.
  • Figure 16 is a diagram showing the structure of a photonic band corresponding to the cell parameter value of the embodiment 14.
  • Figure 17 is a diagram showing the structure of a photonic band corresponding to the cell parameter value in the fifteenth embodiment.
  • Figure 18 is a diagram showing the structure of a photonic band corresponding to the cell parameter value of the embodiment 16.
  • Fig. 19 is a view showing the structure of a photonic band corresponding to the cell parameter value in the embodiment 17.
  • Figure 20 is a diagram showing the structure of a photonic band corresponding to the cell parameter value of the embodiment 18.
  • Figure 21 is a diagram showing the structure of a photonic band corresponding to the cell parameter value of the embodiment 19.
  • Figure 22 is a diagram showing the structure of a photonic band corresponding to the cell parameter value in the embodiment 20.
  • Figure 23 is a diagram showing the structure of a photonic band corresponding to the cell parameter value of the embodiment 21.
  • Figure 24 is a diagram showing the structure of a photonic band corresponding to the cell parameter value of the embodiment 22.
  • Figure 25 is a diagram showing the structure of a photonic band corresponding to the value of a cell parameter in Embodiment 23.
  • Figure 26 is a diagram showing the structure of a photonic band corresponding to the cell parameter value of the embodiment 24.
  • the two-dimensional square lattice photonic crystal of the rotating hollow square column and the rotating triangular prism of the present invention comprises a high refractive index dielectric column and a low refractive index background dielectric column; a photonic crystal junction
  • the cell is arranged in a square lattice; the lattice constant of the square lattice photonic crystal is a; the cell of the square lattice photonic crystal is composed of a high refractive index rotating hollow square column, a high refractive index rotating triangle column and a background medium.
  • the background medium is a low refractive index medium;
  • the outer contour of the hollow square column is a first rotating square column, and the rotation angle ⁇ of the first rotating square column is 45° to 60°, and the side length b is 0.56a to 0.7a.
  • the hollow portion of the hollow square column has a second rotating square column, and the rotation angle ⁇ of the second rotating square column is 30° to 55°, and the side length c is 0.276a to 0.49a; as shown in FIG. 2,
  • the high-refraction rotating triangle column has a right-angled triangle, which is located in the hollow portion of the square column, and the triangular column is four right-angled triangular columns.
  • the apex of the four triangular columns is the third rotating square column, and the rotation angle of the third rotating square column is ⁇ , the range is 40° to 55°, and the side length d is 0.188a to 0.3472a;; the four triangular oblique line connecting line is the fourth rotating square column, and the rotation angle of the fourth rotating square column is ⁇ ,
  • the value ranges from 26° to 50°, and the side length e 0.173a ⁇ 0.382a
  • high refractive index medium is silicon, gallium arsenide, titanium dioxide or high refractive index medium with refractive index greater than 2
  • low refractive index background medium is air, vacuum, magnesium fluoride, silicon dioxide or low refractive index The medium at 1.6.
  • the high refractive index material is silicon
  • the low refractive index material is air
  • ⁇ 54.2°
  • ⁇ 26.7°
  • b 0.69a
  • c 0.4692a
  • the numerical simulation results of this embodiment are shown in Fig. 3, and the relative absolute value of the large absolute band gap is 7.64%.
  • the numerical simulation results of this embodiment are shown in Fig. 4, and the relative absolute value of the large absolute forbidden band is 13.26%.
  • the high refractive index material is silicon
  • the low refractive index material is air
  • ⁇ 60°
  • ⁇ 30.2°
  • ⁇ 54.2°
  • ⁇ 26.7°
  • b 0.69a
  • c 0.4692a
  • the numerical simulation results of this embodiment are shown in Fig. 5, and have a large absolute forbidden band relative value of 16.51%.
  • the high refractive index material is silicon
  • the low refractive index material is air
  • b 0.56a
  • the numerical simulation results of this example are shown in Fig. 6. It is known that the relative absolute value of the large absolute band gap is 6.14%.
  • High refractive index material is silicon
  • low refractive index material is air
  • ⁇ 54.2°
  • ⁇ 26.7°
  • b 0.62a
  • c 0.4216a
  • the numerical simulation results of this embodiment are shown in Fig. 7, and the relative absolute value of the large absolute band gap is 13.32%.
  • the high refractive index material is silicon
  • the low refractive index material is air
  • ⁇ 54.2°
  • ⁇ 26.7°
  • b 0.7a
  • c 0.476a
  • the numerical simulation results of this embodiment are as shown in FIG. 8 and have a large absolute forbidden band relative value. 18.11%.
  • the high refractive index material is silicon
  • the low refractive index material is air
  • ⁇ 54.2°
  • ⁇ 26.7°
  • b 0.69a
  • c 0.4692a
  • the numerical simulation results of this embodiment are shown in Fig. 9, and the relative absolute value of the absolute absolute band is 18.927%.
  • the high refractive index material is silicon
  • the low refractive index material is air
  • ⁇ 54.2°
  • ⁇ 26.7°
  • b 0.69a
  • c 0.4692a
  • the numerical simulation results of this example are shown in Fig. 10, and the relative absolute value of the absolute absolute band is 14.91%.
  • the high refractive index material is silicon
  • the low refractive index material is air
  • ⁇ 55.9°
  • ⁇ 55°
  • ⁇ 54.2°
  • ⁇ 26.7°
  • b 0.69a
  • c 0.4692a
  • the numerical simulation results of this embodiment are as shown in Fig. 11, and have a large absolute forbidden band relative value of 7.24%.
  • the high refractive index material is silicon
  • the low refractive index material is air
  • ⁇ 54.2°
  • ⁇ 26.7°
  • b 0.69a
  • c 0.276a
  • the numerical simulation results of this embodiment are shown in Fig. 12, and the relative absolute value of the absolute absolute band is 8.31%.
  • the high refractive index material is silicon
  • the low refractive index material is air
  • ⁇ 54.2°
  • ⁇ 26.7°
  • b 0.69a
  • c 0.3795a
  • the numerical simulation results of this example are shown in Fig. 13, and the relative absolute value of the large absolute forbidden band is 11.93%.
  • High refractive index material is silicon
  • low refractive index material is air
  • ⁇ 54.2°
  • ⁇ 26.7°
  • b 0.69a
  • c 0.483a
  • the numerical simulation results of this example are shown in Fig. 14, and the relative absolute value of the absolute absolute band is 15.69%.
  • the high refractive index material is silicon
  • the low refractive index material is air
  • ⁇ 40°
  • ⁇ 26.7°
  • b 0.69a
  • c 0.4692a
  • the numerical simulation results of this example are shown in Fig. 15, and the relative absolute value of the large absolute forbidden band is 18.18%.
  • the high refractive index material is silicon
  • the low refractive index material is air
  • b 0.69a
  • c 0.4692a
  • the numerical simulation results of this example are shown in Fig. 16. It is known that the relative absolute value of the large absolute band gap is 18.46%.
  • the high refractive index material is silicon
  • the low refractive index material is air
  • b 0.69a
  • c 0.4692a
  • Ben The numerical simulation results of the examples show that the relative absolute value of the large absolute band gap is 18.91% as shown in FIG.
  • the high refractive index material is silicon
  • the low refractive index material is air
  • ⁇ 54.2°
  • ⁇ 26.7°
  • b 0.69a
  • c 0.4692a
  • the numerical simulation results of this example are as shown in Fig. 18, and the relative absolute value of the absolute absolute band is 18.30%.
  • the high refractive index material is silicon
  • the low refractive index material is air
  • ⁇ 54.2°
  • ⁇ 26.7°
  • b 0.69a
  • c 0.4692a
  • the numerical simulation results of this example are shown in Fig. 19, and the relative absolute value of the large absolute forbidden band is 18.36%.
  • the high refractive index material is silicon
  • the low refractive index material is air
  • ⁇ 54.2°
  • ⁇ 26.7°
  • b 0.69a
  • c 0.4692a
  • the numerical simulation results of this embodiment are shown in Fig. 20, and the relative absolute value of the large absolute forbidden band is 18.89%.
  • the high refractive index material is silicon
  • the low refractive index material is air
  • ⁇ 54.2°
  • ⁇ 26°
  • b 0.69a
  • c 0.4692a
  • the numerical simulation results of this example are as shown in Fig. 21, and have a large absolute forbidden band relative value of 18.92%.
  • the high refractive index material is silicon
  • the low refractive index material is air
  • ⁇ 54.2°
  • ⁇ 40°
  • b 0.69a
  • c 0.4692a
  • the numerical simulation results of this example are as shown in Fig. 22, and have a large absolute forbidden band relative value of 18.73%.
  • the high refractive index material is silicon
  • the low refractive index material is air
  • ⁇ 54.2°
  • ⁇ 50°
  • b 0.69a
  • c 0.4692a
  • the numerical simulation results of this example are shown in Fig. 23, and the relative absolute value of the absolute absolute band is 18.31%.
  • the high refractive index material is silicon
  • the low refractive index material is air
  • ⁇ 54.2°
  • ⁇ 26.7°
  • b 0.69a
  • c 0.4692a
  • the numerical simulation results of this example are shown in Fig. 24, and the relative absolute value of the large absolute forbidden band is 7.54%.
  • the high refractive index material is silicon
  • the low refractive index material is air
  • ⁇ 54.2°
  • ⁇ 26.7°
  • b 0.69a
  • c 0.4692a
  • the numerical simulation results of this embodiment are shown in Fig. 25, and the relative absolute value of the large absolute band gap is 18.91%.
  • the numerical simulation results of this example are as shown in Fig. 26, and the relative absolute value of the absolute absolute band is 18.82%.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Polarising Elements (AREA)
  • Optical Integrated Circuits (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

一种旋转空心正方柱与旋转三角柱二维正方晶格光子晶体，正方晶格光子晶体的元胞由高折射率旋转空心正方柱、高折射率直角三角柱和背景介质组成；高折射率三角柱的截面为直角三角形，四个三角柱的顶点连线处为第三旋转正方柱；四个三角形斜边连线处为第四旋转正方柱；空心正方柱的第一旋转正方柱的旋转角度为45°～60°，边长为0.56a～0.7a，第二旋转正方柱的旋转角度为30°～55°，边长为0.276a～0.49a；第三旋转正方柱的旋转角度为40°～55°，边长为0.188a～0.3472a；第四旋转正方柱的旋转角度为26°～50°，边长为0.173a～0.382a。

Description

旋转空心正方柱与旋转三角柱二维正方晶格光子晶体 技术领域
本发明涉及宽绝对禁带二维光子晶体，更具体地说，本发明涉及旋转空心正方柱与旋转三角柱二维正方晶格光子晶体。
背景技术
1987年，美国贝尔实验室的E.Yablonovitch在研究如何抑制自发辐射和Princeton大学的S.John在研究光子局域时各自独立提出了光子晶体(Photonic Crystal)的概念。光子晶体是一种介电材料在空间中呈周期性排列的物质结构，通常由两种或者两种以上具有不同介电常数的材料构成的人工晶体。
现代光学的主要挑战之一是对光的人工控制，随着光通信和计算机技术的日益发展，对于光信号的控制和操作越发的重要。由于光子晶体具有可以使某一特定频率和特定方向的光通过或者禁止这一性质，因而对光子晶体的研究备受人们的关注。
因为绝对禁带中的电磁场模式是完全不存在的，所以当电子能带与光子晶体绝对禁带重叠时，自发辐射就被抑制了。拥有绝对禁带的光子晶体可以通过控制自发辐射来改变场与物质的相互作用以及提高光学器件的性能。这些光子晶体可以应用在半导体激光器，太阳能电池，高品质谐振腔以及滤波器上。
光子晶体元胞中介电材料的分布对于禁带有着强烈的影响，并且禁带的选择对于光子晶体的应用有着很大的影响，特别是大的绝对禁 带对于宽带信号的控制是非常有效的。
对于频率处在绝对禁带中的光，无论偏振态和波矢如何，都不可能通过。拥有大光子禁带可以用来制作：光波导，液晶光子晶体光纤、负折射率成像、缺陷模式的光子晶体激光器以及缺陷腔。大的光子晶体绝对禁带可以在缺陷模式的光子晶体激光器中抑制自发辐射，尤其是在自发辐射光谱范围很宽的情况下。如果我们想得到拥有窄谐振峰的光子晶体谐振腔时，较大的光子晶体绝对禁带是必需的。在各种光学器件中，偏振无关的光子晶体绝对禁带是非常重要的。正是因为光子晶体的许多器件都要利用光子禁带，所以世界各国的科学家都力求设计出具有更大的绝对禁带的光子晶体结构。
发明内容
本发明的目的是克服现有技术的不足之处，提供一种易于光路集成，且具有大的绝对禁带相对值的二维正方晶格光子晶体结构。
本发明的目的通过下述技术方案予以实现。
本发明的旋转空心正方柱与旋转三角柱二维正方晶格光子晶体包括高折射率介质柱和低折射率背景介质柱；所述光子晶体结构由元胞按正方晶格排列而成；所述正方晶格光子晶体的元胞由高折射率旋转空心正方柱、高折射率旋转三角柱和背景介质组成；所述空心正方柱的外部轮廓线为第一旋转正方柱；所述空心正方柱的空心部位的截面为第二旋转正方柱；所述高折射旋转三角柱的截面为直角三角形，其位于正方柱的空心部位；所述三角柱为4个直角三角柱；所述四个三角柱的顶点连线处为第三旋转正方柱；所述四个三角形斜边连线处为第 四旋转正方柱；所述正方晶格光子晶体的晶格常数为a；所述第一旋转正方柱的旋转角度α为45°～60°，其边长b为0.56a～0.7a；所述第二旋转正方柱的旋转角度β为30°～55°，其边长c为0.276a～0.49a；所述第三旋转正方柱的旋转角度γ为40°～55°，其边长d为0.188a～0.3472a；所述第四旋转正方柱的旋转角度ω为26°～50°，其边长e为0.173a～0.382a。
所述高折射率介质为硅、砷化镓、二氧化钛或者折射率大于2的高折射率介质。
所述高折射率介质材料为硅，其折射率为3.4。
所述背景介质为低折射率介质。
所述低折射率背景介质为空气、真空、氟化镁、二氧化硅或者折射率低于1.6的介质。
所述高折射率介质材料为硅，所述低折射率介质材料为空气；所述第一旋转正方柱的旋转角度为45°<α<60°，其边长0.56a<b<0.7a；所述第二旋转正方柱的旋转角度为30°<β<55°，其边长0.276a<c<0.49a；所述第三旋转正方柱的旋转角度为40°<γ<55°，其边长0.188a<d<0.3472a；所述第四旋转正方柱的旋转角度为26°<ω<50°，其边长0.173a<e<0.382a；所述光子晶体结构的绝对禁带相对值大于10％。
所述高折射率介质材料为硅，所述低折射率介质材料为空气；所述第一旋转正方柱的旋转角度α为55.9°，其边长b为0.69a；所述第二旋转正方柱的旋转角度β为30.2°，其边长c为0.4692a；所述第三 旋转正方柱的旋转角度γ为54.2°，其边长d为0.34627a；所述第四旋转正方柱的旋转角度ω为26.7°，其边长e为0.36358a；所述光子晶体结构的绝对禁带相对值为18.936％。
本发明的旋转空心正方柱与旋转三角柱二维正方晶格光子晶体，可广泛应用于大规模集成光路的设计中。它与现有技术相比，有如下优点：
(1)本发明光子晶体结构具有非常大的绝对禁带，可以为光子晶体器件的设计和制造带来更大的方便和灵活性。
(2)光子晶体集成光路中，光路中不同光学器件之间以及不同光路之间易于连接和耦合，采用正方晶格结构可以使光路简洁，且易于提高光路的集成度。
(3)设计简洁，易于制作，降低了制作成本。
附图说明
图1为本发明的旋转空心正方柱与旋转三角柱二维正方晶格光子晶体的元胞结构示意图。
图2为图1所示采用辅助线的参数结构截面图。
图3为实施例1采用元胞参数值所对应的光子带结构图。
图4为实施例2采用元胞参数值所对应的光子带结构图。
图5为实施例3采用元胞参数值所对应的光子带结构图。
图6为实施例4采用元胞参数值所对应的光子带结构图。
图7为实施例5采用元胞参数值所对应的光子带结构图。
图8为实施例6采用元胞参数值所对应的光子带结构图。
图9为实施例7采用元胞参数值所对应的光子带结构图。
图10为实施例8采用元胞参数值所对应的光子带结构图。
图11为实施例9采用元胞参数值所对应的光子带结构图。
图12为实施例10采用元胞参数值所对应的光子带结构图。
图13为实施例11采用元胞参数值所对应的光子带结构图。
图14为实施例12采用元胞参数值所对应的光子带结构图。
图15为实施例13采用元胞参数值所对应的光子带结构图。
图16为实施例14采用元胞参数值所对应的光子带结构图。
图17为实施例15采用元胞参数值所对应的光子带结构图。
图18为实施例16采用元胞参数值所对应的光子带结构图。
图19为实施例17采用元胞参数值所对应的光子带结构图。
图20为实施例18采用元胞参数值所对应的光子带结构图。
图21为实施例19采用元胞参数值所对应的光子带结构图。
图22为实施例20采用元胞参数值所对应的光子带结构图。
图23为实施例21采用元胞参数值所对应的光子带结构图。
图24为实施例22采用元胞参数值所对应的光子带结构图。
图25为实施例23采用元胞参数值所对应的光子带结构图。
图26为实施例24采用元胞参数值所对应的光子带结构图。
具体实施方式
下面结合附图和具体实施方式对本发明作进一步详细阐述：
如图1所示，本发明的旋转空心正方柱与旋转三角柱二维正方晶格光子晶体包括高折射率介质柱和低折射率背景介质柱；光子晶体结 构由元胞按正方晶格排列而成；正方晶格光子晶体的晶格常数为a；正方晶格光子晶体的元胞由高折射率旋转空心正方柱、高折射率旋转三角柱和背景介质组成，背景介质为低折射率介质；空心正方柱的外部轮廓线为第一旋转正方柱，该第一旋转正方柱的旋转角度α为45°～60°，其边长b为0.56a～0.7a；空心正方柱的空心部位的截面为第二旋转正方柱，该第二旋转正方柱的旋转角度β为30°～55°，其边长c为0.276a～0.49a；如图2所示，高折射旋转三角柱的截面为直角三角形，其位于正方柱的空心部位，三角柱为4个直角三角柱，四个三角柱的顶点连线处为第三旋转正方柱，该第三旋转正方柱的旋转角度为γ，其范围为40°～55°，且边长d为0.188a～0.3472a；；四个三角形斜边连线处为第四旋转正方柱，该第四旋转正方柱的旋转角度为ω，取值范围为26°～50°，且边长e为0.173a～0.382a；高折射率介质为硅、砷化镓、二氧化钛或者折射率大于2的高折射率介质；低折射率背景介质为空气、真空、氟化镁、二氧化硅或者折射率低于1.6的介质。
实施例1
高折射率材料采用硅，低折射率材料为空气，α＝45°，β＝30.2°，γ＝54.2°，ω＝26.7°，b＝0.69a，c＝0.4692a，d＝0.34627a，e＝0.36358a。本实施例的数值模拟结果如图3所示可知，具有大绝对禁带相对值为7.64％。
实施例2
高折射率材料采用硅，低折射率材料为空气，α＝50°，β＝30.2°， γ＝54.2°，ω＝26.7°，b＝0.69a，c＝0.4692a，d＝0.34627a，e＝0.36358a。本实施例的数值模拟结果如图4所示可知，具有大绝对禁带相对值为13.26％。
实施例3
高折射率材料采用硅，低折射率材料为空气，α＝60°，β＝30.2°，γ＝54.2°，ω＝26.7°，b＝0.69a，c＝0.4692a，d＝0.34627a，e＝0.36358a。本实施例的数值模拟结果如图5所示可知，具有大绝对禁带相对值为16.51％。
实施例4
高折射率材料采用硅，低折射率材料为空气，α＝55.9°，β＝30.2°，γ＝54.2°，ω＝26.7°，b＝0.56a，c＝0.3808a，d＝0.2810a，e＝0.2951a。本实施例的数值模拟结果如图6所示可知，具有大绝对禁带相对值为6.14％。
实施例5
高折射率材料采用硅，低折射率材料为空气，α＝55.9°，β＝30.2°，γ＝54.2°，ω＝26.7°，b＝0.62a，c＝0.4216a，d＝0.31114a，e＝0.3267a。本实施例的数值模拟结果如图7所示可知，具有大绝对禁带相对值为13.32％。
实施例6
高折射率材料采用硅，低折射率材料为空气，α＝55.9°，β＝30.2°，γ＝54.2°，ω＝26.7°，b＝0.7a，c＝0.476a，d＝0.3513a，e＝0.3689a。本实施例的数值模拟结果如图8所示可知，具有大绝对禁带相对值为 18.11％。
实施例7
高折射率材料采用硅，低折射率材料为空气，α＝55.9°，β＝30°，γ＝54.2°，ω＝26.7°，b＝0.69a，c＝0.4692a，d＝0.34627a，e＝0.36358a。本实施例的数值模拟结果如图9所示可知，具有大绝对禁带相对值为18.927％。
实施例8
高折射率材料采用硅，低折射率材料为空气，α＝55.9°，β＝40°，γ＝54.2°，ω＝26.7°，b＝0.69a，c＝0.4692a，d＝0.34627a，e＝0.36358a。本实施例的数值模拟结果如图10所示可知，具有大绝对禁带相对值为14.91％。
实施例9
高折射率材料采用硅，低折射率材料为空气，α＝55.9°，β＝55°，γ＝54.2°，ω＝26.7°，b＝0.69a，c＝0.4692a，d＝0.34627a，e＝0.36358a。本实施例的数值模拟结果如图11所示可知，具有大绝对禁带相对值为7.24％。
实施例10
高折射率材料采用硅，低折射率材料为空气，α＝55.9°，β＝30.2°，γ＝54.2°，ω＝26.7°，b＝0.69a，c＝0.276a，d＝0.2037a，e＝0.2139a。本实施例的数值模拟结果如图12所示可知，具有大绝对禁带相对值为8.31％。
实施例11
高折射率材料采用硅，低折射率材料为空气，α＝55.9°，β＝30.2°，γ＝54.2°，ω＝26.7°，b＝0.69a，c＝0.3795a，d＝0.2801a，e＝0.2941a。本实施例的数值模拟结果如图13所示可知，具有大绝对禁带相对值为11.93％。
实施例12
高折射率材料采用硅，低折射率材料为空气，α＝55.9°，β＝30.2°，γ＝54.2°，ω＝26.7°，b＝0.69a，c＝0.483a，d＝0.3565a，e＝0.3743a。本实施例的数值模拟结果如图14所示可知，具有大绝对禁带相对值为15.69％。
实施例13
高折射率材料采用硅，低折射率材料为空气，α＝55.9°，β＝30.2°，γ＝40°，ω＝26.7°，b＝0.69a，c＝0.4692a，d＝0.34627a，e＝0.36358a。本实施例的数值模拟结果如图15所示可知，具有大绝对禁带相对值为18.18％。
实施例14
高折射率材料采用硅，低折射率材料为空气，α＝55.9°，β＝30.2°，γ＝46°，ω＝26.7°，b＝0.69a，c＝0.4692a，d＝0.34627a，e＝0.36358a。本实施例的数值模拟结果如图16所示可知，具有大绝对禁带相对值为18.46％。
实施例15
高折射率材料采用硅，低折射率材料为空气，α＝55.9°，β＝30.2°，γ＝55°，ω＝26.7°，b＝0.69a，c＝0.4692a，d＝0.34627a，e＝0.36358a。本 实施例的数值模拟结果如图17所示可知，具有大绝对禁带相对值为18.91％。
实施例16
高折射率材料采用硅，低折射率材料为空气，α＝55.9°，β＝30.2°，γ＝54.2°，ω＝26.7°，b＝0.69a，c＝0.4692a，d＝0.18768a，e＝0.1971a。本实施例的数值模拟结果如图18所示可知，具有大绝对禁带相对值为18.30％。
实施例17
高折射率材料采用硅，低折射率材料为空气，α＝55.9°，β＝30.2°，γ＝54.2°，ω＝26.7°，b＝0.69a，c＝0.4692a，d＝0.2581a，e＝0.271a。本实施例的数值模拟结果如图19所示可知，具有大绝对禁带相对值为18.36％。
实施例18
高折射率材料采用硅，低折射率材料为空气，α＝55.9°，β＝30.2°，γ＝54.2°，ω＝26.7°，b＝0.69a，c＝0.4692a，d＝0.3519a，e＝0.3695a。本实施例的数值模拟结果如图20所示可知，具有大绝对禁带相对值为18.89％。
实施例19
高折射率材料采用硅，低折射率材料为空气，α＝55.9°，β＝30.2°，γ＝54.2°，ω＝26°，b＝0.69a，c＝0.4692a，d＝0.34627a，e＝0.36358a。本实施例的数值模拟结果如图21所示可知，具有大绝对禁带相对值为18.92％。
实施例20
高折射率材料采用硅，低折射率材料为空气，α＝55.9°，β＝30.2°，γ＝54.2°，ω＝40°，b＝0.69a，c＝0.4692a，d＝0.34627a，e＝0.36358a。本实施例的数值模拟结果如图22所示可知，具有大绝对禁带相对值为18.73％。
实施例21
高折射率材料采用硅，低折射率材料为空气，α＝55.9°，β＝30.2°，γ＝54.2°，ω＝50°，b＝0.69a，c＝0.4692a，d＝0.34627a，e＝0.36358a。本实施例的数值模拟结果如图23所示可知，具有大绝对禁带相对值为18.31％。
实施例22
高折射率材料采用硅，低折射率材料为空气，α＝55.9°，β＝30.2°，γ＝54.2°，ω＝26.7°，b＝0.69a，c＝0.4692a，d＝0.34627a，e＝0.1731。本实施例的数值模拟结果如图24所示可知，具有大绝对禁带相对值为7.54％。
实施例23
高折射率材料采用硅，低折射率材料为空气，α＝55.9°，β＝30.2°，γ＝54.2°，ω＝26.7°，b＝0.69a，c＝0.4692a，d＝0.34627a，e＝0.2597a。本实施例的数值模拟结果如图25所示可知，具有大绝对禁带相对值为18.91％。
实施例24
高折射率材料采用硅，低折射率材料为空气，α＝55.9°，β＝30.2°， γ＝54.2°，ω＝26.7°，b＝0.69a，c＝0.4692a，d＝0.34627a，e＝0.3809a。本实施例的数值模拟结果如图26所示可知，具有大绝对禁带相对值为18.82％。
以上之详细描述仅为清楚理解本发明，而不应将其看作是对本发明不必要的限制，因此对本发明的任何改动对本领域中的技术熟练的人是显而易见的。

Claims (7)

  1. 一种旋转空心正方柱与旋转三角柱二维正方晶格光子晶体，其特征在于：它包括高折射率介质柱和低折射率背景介质柱；所述的光子晶体结构由元胞按正方晶格排列而成；所述正方晶格光子晶体的元胞由高折射率旋转空心正方柱、高折射率直角三角柱和背景介质组成；所述空心正方柱的外部轮廓线为第一旋转正方柱；所述空心正方柱的空心部位的截面为第二旋转正方柱；所述高折射率三角柱的截面为直角三角形，其位于正方柱的空心部位；所述三角柱为4个直角三角柱；所述四个三角柱的顶点连线处为第三旋转正方柱；所述四个三角形斜边连线处为第四旋转正方柱；所述正方晶格光子晶体的晶格常数为a；所述第一旋转正方柱的旋转角度α为45°～60°，其边长b为0.56a～0.7a；所述第二旋转正方柱的旋转角度β为30°～55°，其边长c为0.276a～0.49a；所述第三旋转正方柱的旋转角度γ为40°～55°，其边长d为0.188a～0.3472a；所述第四旋转正方柱的旋转角度ω为26°～50°，其边长e为0.173a～0.382a。
  2. 按照权利要求1所述的旋转空心正方柱与旋转三角柱二维正方晶格光子晶体，其特征在于：所述高折射率介质为硅、砷化镓、二氧化钛或者折射率大于2的高折射率介质。
  3. 按照权利要求2所述的旋转空心正方柱与旋转三角柱二维正方晶格光子晶体，其特征在于：所述高折射率介质材料为硅，其折射率为3.4。
  4. 按照权利要求1所述的旋转空心正方柱与旋转三角柱二维正方晶格光子晶体，其特征在于：所述背景介质为低折射率介质。
  5. 按照权利要求1所述的旋转空心正方柱与旋转三角柱二维正方晶格光子晶体，其特征在于：所述低折射率背景介质为空气、真空、氟化镁、二氧化硅或者折射率低于1.6的介质。
  6. 按照权利要求1或2或5所述的旋转空心正方柱与旋转三角柱二维正方晶格光子晶体，其特征在于：所述高折射率介质材料为硅，所述低折射率介质材料为空气；所述第一旋转正方柱的旋转角度为45°<α<60°，其边长0.56a<b<0.7a；所述第二旋转正方柱的旋转角度为30°<β<55°，其边长0.276a<c<0.49a；所述第三旋转正方柱的旋转角度为40°<γ<55°，其边长0.188a<d<0.3472a；所述第四旋转正方柱的旋转角度为26°<ω<50°，其边长0.173a<e<0.382a；所述光子晶体结构的绝对禁带相对值大于10％。
  7. 按照权利要求1或2或5所述的旋转空心正方柱与旋转三角柱二维正方晶格光子晶体，其特征在于：所述高折射率介质材料为硅，所述低折射率介质材料为空气；所述第一旋转正方柱的旋转角度α为55.9°，其边长b为0.69a；所述第二旋转正方柱的旋转角度β为30.2°，其边长c为0.4692a；所述第三旋转正方柱的旋转角度γ为54.2°，其边长d为0.34627a；所述第四旋转正方柱的旋转角度ω为26.7°，其边长e为0.36358a；所述光子晶体结构的绝对禁带相对值为18.936％。
PCT/CN2016/083063 2015-05-27 2016-05-23 旋转空心正方柱与旋转三角柱二维正方晶格光子晶体 Ceased WO2016188397A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US15/822,236 US10094979B2 (en) 2015-05-27 2017-11-27 Two-dimensional square-lattice photonic crystal with rotated hollow square rods and rotated triangle rods

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201510280525.XA CN104820264B (zh) 2015-05-27 2015-05-27 旋转空心正方柱与旋转三角柱二维正方晶格光子晶体
CN201510280525.X 2015-05-27

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US15/822,236 Continuation US10094979B2 (en) 2015-05-27 2017-11-27 Two-dimensional square-lattice photonic crystal with rotated hollow square rods and rotated triangle rods

Publications (1)

Publication Number Publication Date
WO2016188397A1 true WO2016188397A1 (zh) 2016-12-01

Family

ID=53730605

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2016/083063 Ceased WO2016188397A1 (zh) 2015-05-27 2016-05-23 旋转空心正方柱与旋转三角柱二维正方晶格光子晶体

Country Status (3)

Country Link
US (1) US10094979B2 (zh)
CN (1) CN104820264B (zh)
WO (1) WO2016188397A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104849805B (zh) * 2015-05-27 2017-10-03 欧阳征标 基于旋转空心正方柱的二维正方晶格光子晶体
CN104849806B (zh) * 2015-05-27 2017-10-03 欧阳征标 基于十字连杆与旋转空心正方柱的二维正方晶格光子晶体
CN104820264B (zh) * 2015-05-27 2017-11-14 欧阳征标 旋转空心正方柱与旋转三角柱二维正方晶格光子晶体
CN112817073B (zh) * 2020-12-31 2022-02-01 南京航空航天大学 一种基于无反射滤波器原理的红外吸波器
CN117741833B (zh) * 2023-12-15 2025-03-21 苏州城市学院 一种拓扑光子晶体结构、光波导以及光分束器

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002014913A1 (en) * 2000-08-15 2002-02-21 Corning Incorporated Active photonic crystal waveguide device
US20130298380A1 (en) * 2011-12-16 2013-11-14 Furukawa Electric Co., Ltd Method of manufacturing photonic bandgap fiber
CN103901536A (zh) * 2014-04-11 2014-07-02 深圳大学 一种圆环杆与平板连杆的二维正方晶格光子晶体
CN103901513A (zh) * 2014-04-21 2014-07-02 山东大学 二维类石墨烯复式结构光子晶体
CN104155718A (zh) * 2014-07-28 2014-11-19 欧阳征标 基于高折射率内圆外方空心柱的正方晶格光子晶体
CN104820264A (zh) * 2015-05-27 2015-08-05 欧阳征标 旋转空心正方柱与旋转三角柱二维正方晶格光子晶体

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6859304B2 (en) * 2002-08-09 2005-02-22 Energy Conversion Devices, Inc. Photonic crystals and devices having tunability and switchability
JP4923234B2 (ja) * 2004-12-28 2012-04-25 国立大学法人京都大学 ２次元フォトニック結晶及びそれを用いた光デバイス
US20090217977A1 (en) * 2008-02-22 2009-09-03 Marian Florescu Photonic crystal architectures for frequency- and angle-selective thermal emitters
CN104101949B (zh) * 2014-07-28 2017-01-25 欧阳征标 基于十字连杆柱和圆柱的大绝对禁带正方晶格光子晶体
CN104297842B (zh) * 2014-09-29 2017-03-22 深圳市浩源光电技术有限公司 一种十字连杆与旋转正方杆的二维正方晶格光子晶体

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002014913A1 (en) * 2000-08-15 2002-02-21 Corning Incorporated Active photonic crystal waveguide device
US20130298380A1 (en) * 2011-12-16 2013-11-14 Furukawa Electric Co., Ltd Method of manufacturing photonic bandgap fiber
CN103901536A (zh) * 2014-04-11 2014-07-02 深圳大学 一种圆环杆与平板连杆的二维正方晶格光子晶体
CN103901513A (zh) * 2014-04-21 2014-07-02 山东大学 二维类石墨烯复式结构光子晶体
CN104155718A (zh) * 2014-07-28 2014-11-19 欧阳征标 基于高折射率内圆外方空心柱的正方晶格光子晶体
CN104820264A (zh) * 2015-05-27 2015-08-05 欧阳征标 旋转空心正方柱与旋转三角柱二维正方晶格光子晶体

Also Published As

Publication number Publication date
CN104820264B (zh) 2017-11-14
US20180074260A1 (en) 2018-03-15
US10094979B2 (en) 2018-10-09
CN104820264A (zh) 2015-08-05

Similar Documents

Publication Publication Date Title
WO2016188397A1 (zh) 旋转空心正方柱与旋转三角柱二维正方晶格光子晶体
WO2015154661A1 (zh) 一种圆环杆与平板连杆的二维正方晶格光子晶体
WO2016050185A1 (zh) 一种十字连杆与旋转正方杆的二维正方晶格光子晶体
WO2016015630A1 (zh) 基于十字连杆柱和圆柱的大绝对禁带正方晶格光子晶体
WO2016091194A1 (zh) 基于平板光子晶体的高消光比tm光开关
WO2016188395A1 (zh) 基于十字连杆与旋转空心正方柱的二维正方晶格光子晶体
WO2016015627A1 (zh) 基于单连杆柱和圆环柱的大绝对禁带正方晶格光子晶体
WO2016188396A1 (zh) 基于旋转空心正方柱的二维正方晶格光子晶体
CN104155718B (zh) 基于高折射率内圆外方空心柱的正方晶格光子晶体
CN104122607B (zh) 基于三连杆柱和圆环柱的大绝对禁带正方晶格光子晶体
CN115903133A (zh) 一种非厄米拓扑光子晶体功能波导
CN110764174B (zh) 一种介质光栅窄带滤波器及其制作方法
CN102332674A (zh) 光子晶体光纤激光器
CN107290826B (zh) 一种基于风车型缺陷的具有大的tm禁带的二维正方晶格光子晶体结构
CN104199143B (zh) 基于二维类石墨烯结构的光子晶体同源结构高消光比偏振分束器
Liang et al. Photocontrol phase shifting with extraordinary optical transmission of terahertz waves via vanadium dioxide based metasurface
CN104950385A (zh) 方柱式正方晶格光子晶体高折射率双补偿散射柱直角波导
Vertchenko et al. Index-near-zero modes in Si photonic crystal supported by accidental bound states in the continuum
CN104950383A (zh) 方孔式正方晶格光子晶体低折射率双补偿散射柱直角波导
CN104950389B (zh) 圆柱式正方晶格光子晶体高折射率双补偿散射柱直角波导
WO2016050188A1 (zh) 方柱式正方晶格光子晶体高折射率单补偿散射柱直角波导
Abbasi et al. Investigation of Resonance Frequency Dependence on Cavity Geometry in Orthogonal Splitter with Photonic Crystal Structure
Mao New SHG Materials Based on Metal Selenites and Tellurites
Hoekstra et al. Strong suppression of radiation states in a slab waveguide sandwitched between omnidirectional mirrors
CN104950387A (zh) 圆柱式正方晶格光子晶体高折射率单补偿散射柱直角波导

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 16799285

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC - FORM 1205A (04.06.2018)

122 Ep: pct application non-entry in european phase

Ref document number: 16799285

Country of ref document: EP

Kind code of ref document: A1