WO2016161707A1 - 一种灰色调掩膜及其制作方法 - Google Patents

一种灰色调掩膜及其制作方法 Download PDF

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Publication number
WO2016161707A1
WO2016161707A1 PCT/CN2015/082818 CN2015082818W WO2016161707A1 WO 2016161707 A1 WO2016161707 A1 WO 2016161707A1 CN 2015082818 W CN2015082818 W CN 2015082818W WO 2016161707 A1 WO2016161707 A1 WO 2016161707A1
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Prior art keywords
gap
width
light
slit
light blocking
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Ceased
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PCT/CN2015/082818
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English (en)
French (fr)
Inventor
邓竹明
赵锋
邱钟毅
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US14/763,235 priority Critical patent/US9835939B2/en
Publication of WO2016161707A1 publication Critical patent/WO2016161707A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof

Definitions

  • the present invention relates to the field of liquid crystal display technology, and in particular, to a gray tone mask and a method of fabricating the same.
  • GTM Gray-tone Mask
  • the conventional GTM only limits the length of the light-blocking strip in the gray-scale area, there is no limit to the relationship between the slit width in the gray-scale area and the length dimension of the light-blocking strip. Therefore, the conventional GTM production In the process, the design of the slit width and the length of the light-blocking strip is wide, and the GTM of different designs is also inferior in the developed photoresist profile, and the thickness of the photoresist in the GTM region after development may be uneven or dull. Residual, residual photoresist is not available, so that the effect of the gray-scale mask is not achieved. Therefore, the use of the traditional GTM requires debugging of the process, resulting in high experimental costs and long process times.
  • the present invention provides a gray mask and a manufacturing method thereof, which can reduce the design range, directly obtain a reasonable gray mask design scheme, and reduce the experiment cost.
  • the present invention provides a gray tone mask comprising a first light blocking strip and a second light blocking strip, forming a first between any two adjacent first light blocking strips a second light blocking strip is disposed in the first gap, the first gap includes a first gap formed between the adjacent first light blocking strip and the second light blocking strip, wherein the length of the second light blocking strip is a, the width of the first slit is b, the ratio of the length a of the second light blocking strip to the width b of the first slit satisfies: 0.9 ⁇ a / b ⁇ 1.1, the length a of the second light blocking strip is smaller than the resolution of the exposure system The ratio is greater than the resolution of the gray tone mask making system.
  • the first gap is provided with at least two second light blocking strips, a second gap is formed between the two adjacent second light blocking strips, and the second slit The width is equal to the width of the first slit.
  • the length of the second light blocking strip is equal to the width of the first slit.
  • the sum of the number of the first slits and the number of the second slits is equal to the number of the second light blocking strips plus one.
  • the width of the first gap is the sum of the lengths of all the second light blocking strips in the first gap, the width of the first slit and the width of the second slit.
  • the aperture ratio of the gray mask is the ratio of the sum of the widths of all the first slits and the width of the second slit in the first gap to the width of the first gap.
  • the present invention further provides a gray mask
  • the gray mask includes a first light blocking strip and a second light blocking strip, and any two adjacent first light blocking strips form a first a gap
  • the second light bar is disposed in the first gap
  • the first gap includes a first gap formed between the adjacent first light bar and the second light bar, wherein the length of the second light bar
  • the width of the first slit is b
  • the ratio of the length a of the second light blocking strip to the width b of the first slit satisfies: 0.9 ⁇ a / b ⁇ 1.1.
  • the length a of the second light bar is smaller than the resolution of the exposure system and greater than the resolution of the gray tone mask making system.
  • the length of the second light blocking strip is equal to the width of the first slit.
  • a second slit is formed between the two adjacent second light blocking strips, and the width of the second slit is equal to the width of the first slit.
  • the sum of the number of the first slits and the number of the second slits is equal to the number of the second light blocking strips plus one.
  • the width of the first gap is the sum of the lengths of all the second light blocking strips in the first gap, the width of the first slit and the width of the second slit.
  • the aperture ratio of the gray mask is the ratio of the sum of the widths of all the first slits and the width of the second slit in the first gap to the width of the first gap.
  • the length of the first light blocking strip is equal to the width of the first gap.
  • the invention also provides a method for fabricating a gray mask, the method comprising: providing a substrate, wherein the substrate is covered with an opaque material layer; and the substrate is etched by an excimer laser ablation process to form a gray a mask; wherein the gray mask comprises a first light barrier and a second light barrier, a first gap is formed between any two adjacent first light barriers, and the second light barrier is disposed at the first In the gap, the first gap includes a first slit formed between the adjacent first light blocking strip and the second light blocking strip, wherein the second light blocking strip has a length a, and the first slit has a width b, The ratio of the length a of the second light bar to the width b of the first slit satisfies: 0.9 ⁇ a / b ⁇ 1.1.
  • a second slit is formed between the two adjacent second light blocking strips, and the width of the second slit is equal to the width of the first slit.
  • the gray mask of the present invention includes a first light blocking strip and a second light blocking strip, between any two adjacent first light blocking strips Forming a first gap, the second light blocking strip is disposed in the first gap, the first gap includes a first gap formed between the adjacent first light blocking strip and the second light blocking strip, wherein the second light blocking strip
  • the length is a
  • the width of the first slit is b
  • the ratio of the length a of the second light blocking strip to the width b of the first slit satisfies: 0.9 ⁇ a / b ⁇ 1.1
  • the length of the second light blocking strip a It is smaller than the resolution of the exposure system and larger than the resolution of the gray masking system. Therefore, the design range of the gray mask is reduced, and a reasonable design scheme can be obtained more directly, the experiment cost is reduced, and better development is obtained. After the photoresist profile.
  • FIG. 1 is a schematic structural view of a gray tone mask according to a first embodiment of the present invention
  • FIG. 2 is a schematic structural view of a gray tone mask according to a second embodiment of the present invention.
  • FIG. 3 is a schematic flow chart of a method for fabricating a gray mask according to the present invention.
  • FIG. 1 is a schematic structural view of a gray tone mask according to a first embodiment of the present invention.
  • the gray mask 1 of the present embodiment is composed of a substrate 2 and a opaque material layer 3.
  • the substrate 2 is usually a transparent quartz glass, and the opaque material layer 3 is plated on the substrate by sputtering. 2 On the surface, the opaque material layer 3 is usually a chrome layer.
  • the gray tone mask 1 includes a first light bar 11 and a second light bar 12, wherein the first light bar 11 and the second light bar 12 are formed by laser etching of the opaque material layer 3, first The length of the light blocking strip 11 is greater than the length of the second light blocking strip 12.
  • a first gap 13 is formed between any two adjacent first light bars 11 , and a second light bar 12 is disposed in the first gap 13 .
  • two adjacent first light bars 11 includes a second light bar 12, and the second light bar 12 is equally spaced from the two first light bars 11 on both sides, in other words, any adjacent first light bar 11 and A first slit 14 is formed between the second light blocking strips 12, and the first slits 14 have the same width.
  • the first gap 13 includes a first slit 14 and a second light blocking strip 12.
  • the length of the second light barrier 12 is a
  • the width of the first slit 14 is b
  • the ratio of the length of the second light barrier 12 to the width b of the first slit 14 satisfies: 0.9 ⁇ a / b ⁇ 1.1 .
  • the first light blocking strip 11 forms an opaque area of the gray mask 1
  • the first gap 13 formed by the first slit 14 and the second light blocking strip 12 is the gray of the gray mask 1
  • the step region is semi-transmissive, and its light transmittance is affected by the length of the second light blocking strip 12 and the width of the first slit 14.
  • limiting the length a of the second light bar 12 must be smaller than the minimum resolution of the exposure system, here refers to the minimum resolution of the yellow machine to ensure that the image after exposure and development by the gray mask 1 is blurred.
  • the length a of the second light barrier 12 must also be greater than the resolution of the production system of the gray mask 1 .
  • the gray mask 1 of the embodiment includes a first light blocking strip 11 and a second light blocking strip 12, wherein a first gap is formed between any two adjacent first light blocking strips 11
  • the first gap 13 is a gray-scale region of the gray mask 1
  • the second light-shielding strip 12 is located in the first gap 13
  • the second light-shielding strip 12 and the first light-shielding strip 11 are equally spaced.
  • the first slit 14 is formed, and the length a of the second light blocking strip 12 satisfies the minimum resolution of the exposure system and is greater than the resolution of the fabrication system of the gray mask 1 and, in addition, the length a of the second light barrier 12
  • the ratio of the ratio to the width b of the first slit 14 satisfies: 0.9 ⁇ a / b ⁇ 1.1. Therefore, the gray mask 1 disclosed in the embodiment reduces the design range, and can directly obtain a reasonable design scheme, obtain a usable photoresist profile, realize the effect of the gray scale mask, and reduce the experiment cost.
  • FIG. 2 is a schematic structural view of a gray tone mask according to a second embodiment of the present invention.
  • the gray mask 4 suggested in this embodiment is different from the gray mask 1 suggested in the first embodiment in that at least two second light barriers are included between any two adjacent first light barriers 11 12.
  • This embodiment is described by taking two second light blocking strips 12 as an example. It should be noted that the components of the same reference numerals as those shown in FIG. 1 in FIG. 2 have substantially the same functions and will not be described again. As shown in FIG.
  • two adjacent first light blocking strips 11 include two second light blocking strips 12, wherein any two adjacent light blocking strips are equally spaced, that is, a first slit 14 formed between the first light blocking strip 11 and the second light blocking strip 12, a second slit 15 formed between the second light blocking strip 12 and the second light blocking strip 12, and a width of the first slit 14
  • the width of the second slit 15 is equal.
  • the sum of the number of the first slits 14 and the number of the second slits 15 is equal to the number of the second light blocking strips plus 1; and, the first gap 13
  • the width is the sum of the length of all the second light-shielding strips 12 in the first gap 13, the width of the first slit 14 and the width of the second slit 15. That is, in the gray-scale region of the gray mask 4, the number of slits is always one more than the number of the light-blocking strips, and the width of the gray-scale region is the sum of the length of the light-blocking strip and the width of the slit.
  • the aperture ratio of the gray mask 4 is the ratio of the sum of the widths of all the first slits 14 and the width of the second slit 15 in the first gap 13 to the first gap 13.
  • the length of the first light blocking strip is 4 ⁇ m
  • the length of the second light blocking strip is 0.8 ⁇ m
  • the width of the first slit 14 and the second slit 15 are both 0.8 ⁇ m
  • the aperture ratio of the gray tone mask 4 3b / (2a + 3b), so the aperture ratio of the gray tone mask 4 is 60.0%.
  • the length of the first light bar 11 is equal to the width of the first gap 13 .
  • the gray mask 4 suggested in this embodiment only requires that the ratio of the length a of the second light bar 12 to the width b of the first slit 14 satisfies: 0.9 ⁇ a/b ⁇ 1.1, and satisfies the traditional process. It is required that the length a of the second light-blocking strip 12 is smaller than the minimum resolution of the exposure system and larger than the resolution of the manufacturing system of the gray mask 4, and a better developed photoresist profile can be obtained to realize a gray-scale mask.
  • the effect is not required for different designs of the length of the first light barrier 11 and the width of the first gap 13, and for the second light barrier 12 and the first slit 14 or the second slit 15 in the first gap 13
  • the number there is no limit to the number, so that it has better compatibility; and, by limiting the ratio of the length of the light-blocking strip in the gray-scale region to the width of the slit, the range is 0.9 ⁇ a/b ⁇ 1.1, compared to the conventional gray-scale mask.
  • Optimized design reduced the design range of the gray mask 4, more directly to obtain a reasonable design, reduce the cost of the experiment.
  • FIG. 3 is a schematic flowchart of a method for fabricating the gray mask 1 of the present invention.
  • the method for manufacturing the gray mask 1 includes the following steps:
  • a substrate 2 is provided, wherein the substrate 2 is covered with a layer 3 of opaque material.
  • the substrate 2 is quartz glass having high purity, low reflectance, and low coefficient of thermal expansion.
  • the opaque material is preferably chromium, and the opaque chrome layer 3 is plated on the substrate by sputtering to a thickness of about 0.1 ⁇ m.
  • S12 The substrate 2 is etched by an excimer laser ablation process to form a gray mask 1.
  • the reticle has a light-transmitting area and an opaque area, and the opaque area of the reticle corresponds to the first light-blocking strip 11 and the second light-blocking strip 12 of the gray mask 1 , and the light-transmitting area Corresponding to the first slit 14 of the gray mask 1.
  • the laser passes through the light-transmitting region of the reticle to etch the first slit 14 on the opaque material layer 3 of the substrate 2, and the corresponding reticle is not formed on the opaque material layer 3 not subjected to laser etching.
  • the first light blocking strip 11 and the second light blocking strip 12 in the light transmitting region.
  • the gray mask 1 of the present embodiment is manufactured by a laser etching process using a photomask having a corresponding pattern with the gray mask 1 , and the gray mask 1 includes the first light barrier 11 and the first a second light barrier 12, a first gap 13 is formed between any two adjacent first light barriers 11, a second light barrier 12 is disposed in the first gap 13, and the first gap 13 includes an adjacent first a first slit 14 formed between the light blocking strip 11 and the second light blocking strip 12, wherein the second light blocking strip 12 has a length a, the first slit 14 has a width b, and the second light blocking strip 12
  • the ratio of the length a to the width b of the first slit 14 satisfies: 0.9 ⁇ a / b ⁇ 1.1.
  • At least two second light blocking strips 12 may be disposed in the first gap 13 as needed, and a second slit 15 is formed between any two adjacent second light blocking strips 12, the second slit
  • the width of 15 is equal to the width of the first slit 14, that is, the equal width between any two of the light blocking strips.
  • the length a of the second light-blocking strip 12 must be greater than the resolution of the gray tone mask 1 fabrication system and less than the minimum resolution of the yellow light exposure system.
  • the gray mask of the present invention includes a first light blocking strip and a second light blocking strip, and a first gap is formed between any two adjacent first light blocking strips.
  • the second light bar is disposed in the first gap, and the first gap includes a first gap formed between the adjacent first light bar and the second light bar, wherein the length of the second light bar is a,
  • the width of a slit is b, and the ratio of the length a of the second light-blocking strip to the width b of the first slit satisfies: 0.9 ⁇ a / b ⁇ 1.1, and thus, the gray-scale region of the gray tone mask of the present invention
  • the length of the second light bar must be smaller than the minimum resolution of the yellow light exposure system and larger than the resolution of the gray tone mask making system, and the length of the gray tone mask of the gray mask of the present invention.
  • the ratio of the width of the second light barrier to the light-transmissive slit that is, the width of the first slit, satisfies: 0.9 ⁇ a/b ⁇ 1.1, thereby narrowing the design range of the gray mask, and more reasonablely obtaining a reasonable design scheme, reducing The cost of the experiment is, and a better developed photoresist profile is obtained.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
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Abstract

一种灰色调掩膜（1）及其制作方法，其中，该灰色调掩膜（1）包括第一挡光条（11）和第二挡光条（12），任意两个相邻的第一挡光条（11）之间形成第一间隙（13），第二挡光条（12）设置在第一间隙（13）内，第一间隙（13）包括相邻的第一挡光条（11）和第二挡光条（12）之间形成的第一缝隙（14），其中，第二挡光条（12）的长度为a，第一缝隙（14）的宽度为b，第一挡光条（11）的长度a与第一缝隙（14）的宽度b的比值满足：0.9＜a/b＜1.1。通过上述方式，缩小了灰色调掩膜（1）的设计范围，能更直接地得到合理的设计方案，减少实验成本。

Description

一种灰色调掩膜及其制作方法
【技术领域】
本发明涉及液晶显示技术领域，特别是涉及一种灰色调掩膜及其制作方法。
【背景技术】
传统的灰色调掩膜（Gray-tone Mask；简称GTM）设计，只限制了该GTM灰阶区域内的挡光条的长度尺寸必须小于黄光曝光系统的最小分辨率，以获得较为模糊化的显影图形；同时，限制该挡光条的长度尺寸必须大于该GTM的制作系统的分辨率，以保证掩膜的加工。
但是，由于传统的GTM只限制了灰阶区域内的挡光条的长度尺寸，而对于灰阶区域内的缝隙宽度与挡光条的长度尺寸之间的关系没有限制，因此，传统的GTM制作工艺中，缝隙宽度与挡光条的长度尺寸的设计范围较广，而且不同的设计的GTM其显影后的光阻轮廓也良莠不齐，会出现显影后的GTM区域内光阻厚度不均匀或无光阻残留，残留的光阻不可用的情况，从而达不到灰阶掩膜的效果。因此，使用传统的GTM需要对制程进行调试，从而导致实验成本过高，制程时间过长。
【发明内容】
有鉴于此，本发明提供一种灰色调掩膜及其制作方法，以缩小设计范围，直接得到合理的灰色调掩膜的设计方案，减少实验成本。
为解决上述问题，本发明提供的一种灰色调掩膜，该灰色调掩膜包括第一挡光条和第二挡光条，任意两个相邻的第一挡光条之间形成第一间隙，第二挡光条设置在第一间隙内，第一间隙包括相邻的第一挡光条和第二挡光条之间形成的第一缝隙，其中，第二挡光条的长度为a，第一缝隙的宽度为b，第二挡光条的长度a与第一缝隙的宽度b的比值满足：0.9<a/b<1.1，第二挡光条的长度a小于曝光系统的分辨率，且大于灰色调掩膜制作系统的分辨率，当第一间隙设置有至少两个第二挡光条时，两个相邻的第二挡光条之间形成第二缝隙，第二缝隙的宽度与第一缝隙的宽度相等。
其中，第二挡光条的长度等于第一缝隙的宽度。
其中，在第一间隙中，第一缝隙的个数与第二缝隙的个数之和等于第二挡光条的个数加1。
其中，第一间隙的宽度为在第一间隙内的所有第二挡光条的长度、第一缝隙的宽度及第二缝隙的宽度之和。
其中，灰色调掩膜的开口率为在第一间隙内所有第一缝隙的宽度与第二缝隙的宽度之和与第一间隙的宽度的比值。
为解决上述问题，本发明还提供的一种灰色调掩膜，该灰色调掩膜包括第一挡光条和第二挡光条，任意两个相邻的第一挡光条之间形成第一间隙，第二挡光条设置在第一间隙内，第一间隙包括相邻的第一挡光条和第二挡光条之间形成的第一缝隙，其中，第二挡光条的长度为a，第一缝隙的宽度为b，第二挡光条的长度a与第一缝隙的宽度b的比值满足：0.9<a/b<1.1。
其中，第二挡光条的长度a小于曝光系统的分辨率，且大于灰色调掩膜制作系统的分辨率。
其中，第二挡光条的长度等于第一缝隙的宽度。
其中，当第一间隙设置有至少两个第二挡光条时，两个相邻的第二挡光条之间形成第二缝隙，第二缝隙的宽度与第一缝隙的宽度相等。
其中，在第一间隙中，第一缝隙的个数与第二缝隙的个数之和等于第二挡光条的个数加1。
其中，第一间隙的宽度为在第一间隙内的所有第二挡光条的长度、第一缝隙的宽度及第二缝隙的宽度之和。
其中，灰色调掩膜的开口率为在第一间隙内所有第一缝隙的宽度与第二缝隙的宽度之和与第一间隙的宽度的比值。
其中，第一挡光条的长度等于第一间隙的宽度。
本发明还提供一种灰色调掩膜的制作方法，该制作方法包括：提供基板，其中，基板上铺设有不透光材料层；采用准分子激光烧蚀工艺对基板进行刻蚀，以形成灰色调掩膜；其中，灰色调掩膜包括第一挡光条和第二挡光条，任意两个相邻的第一挡光条之间形成第一间隙，第二挡光条设置在第一间隙内，第一间隙包括相邻的第一挡光条和第二挡光条之间形成的第一缝隙，其中，第二挡光条的长度为a，第一缝隙的宽度为b，第二挡光条的长度a与第一缝隙的宽度b的比值满足：0.9<a/b<1.1。
其中，当第一间隙设置有至少两个第二挡光条时，两个相邻的第二挡光条之间形成第二缝隙，第二缝隙的宽度与第一缝隙的宽度相等。
通过上述方案，本发明的有益效果是：区别于现有技术，本发明的灰色调掩膜包括第一挡光条和第二挡光条，任意两个相邻的第一挡光条之间形成第一间隙，第二挡光条设置在第一间隙内，第一间隙包括相邻的第一挡光条和第二挡光条之间形成的第一缝隙，其中，第二挡光条的长度为a，第一缝隙的宽度为b，第二挡光条的长度a与第一缝隙的宽度b的比值满足：0.9<a/b<1.1，并且，第二挡光条的长度a小于曝光系统的分辨率且大于灰色调掩膜制作系统的分辨率，因此，缩小了灰色调掩膜的设计范围，能更直接地得到合理的设计方案，减少实验成本，并且得到更好的显影后的光阻轮廓。
【附图说明】
图1是本发明第一实施例的灰色调掩膜的结构示意图；
图2是本发明第二实施例的灰色调掩膜的结构示意图；
图3是本发明灰色调掩膜的制作方法流程示意图。
【具体实施方式】
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，均属于本发明保护的范围。
请参看图1，图1是本发明第一实施例的灰色调掩膜的结构示意图。如图1所示，本实施例的灰色调掩膜1由基板2及不透光材料层3组成，基板2通常为透明的石英玻璃，不透光材料层3通过溅射的方法镀在基板2表面上，不透光材料层3通常为铬层。灰色调掩膜1包括第一挡光条11和第二挡光条12，其中，第一挡光条11与第二挡光条12由不透光材料层3通过激光刻蚀形成，第一挡光条11的长度大于第二挡光条12的长度。任意两个相邻的第一挡光条11之间形成第一间隙13，第二挡光条12设置在第一间隙13内，在本实施例中，两个相邻的第一挡光条11之间包含一个第二挡光条12，第二挡光条12与两侧的两个第一挡光条11等宽间隔，换句话说，任意相邻的第一挡光条11与第二挡光条12之间形成第一缝隙14，这些第一缝隙14的宽度相等，第一间隙13包括第一缝隙14和第二挡光条12。其中，第二挡光度12的长度为a，第一缝隙14的宽度为b，第二挡光条12的长度为a与第一缝隙14的宽度b的比值满足：0.9<a/b<1.1。
在本实施例中，第一挡光条11形成灰色调掩膜1的不透光区域，由第一缝隙14与第二挡光条12形成的第一间隙13为灰色调掩膜1的灰阶区域，可半透光，其透光率受第二挡光条12的长度与第一缝隙14的宽度影响。并且，限制第二挡光条12的长度a必须小于曝光系统的最小分辨率，这里指的是黄光机台的最小分辨率，以保证利用该灰色调掩膜1曝光显影后的图形具有模糊化的作用；为了保证灰色调掩膜1正常加工，第二挡光条12的长度a还必须大于该灰色调掩膜1的制作系统的分辨率。
区别于现有技术，本实施例的灰色调掩膜1包括第一挡光条11和第二挡光条12，其中，任意两个相邻的第一挡光条11之间形成第一间隙13，该第一间隙13为该灰色调掩膜1的灰阶区域，第二挡光条12位于第一间隙13内，第二挡光条12与第一挡光条11之间等宽间距形成第一缝隙14，并且，第二挡光条12的长度a满足小于曝光系统的最小分辨率且大于灰色调掩膜1的制作系统的分辨率，此外，第二挡光条12的长度a与第一缝隙14的宽度b的比值范围满足：0.9<a/b<1.1。因而，本实施例揭示的灰色调掩膜1的缩小了设计范围，可以直接地得到合理的设计方案，得到可用的光阻轮廓，实现灰阶掩膜的效果，减少实验成本。
请参看图2，图2是本发明第二实施例的灰色调掩膜的结构示意图。本实施例提示的灰色调掩膜4与第一实施例提示的灰色调掩膜1的不同之处在于任意两个相邻的第一挡光条11之间包含至少两个第二挡光条12，本实施例以包含两个第二挡光条12为例说明。这里需要说明的是，图2中与图1所示的相同标号的元件，其作用大致相同，在此不再赘述。如图2所示，两个相邻的第一挡光条11之间包含两个第二挡光条12，其中，相邻的任意两个挡光条之间等宽设置，也就是说，第一挡光条11与第二挡光条12之间形成的第一缝隙14，第二挡光条12与第二挡光条12之间形成的第二缝隙15，第一缝隙14的宽度和第二缝隙15的宽度相等。其中，本实施例中第二挡光条12的长度与第一缝隙14或第二缝隙15的宽度相等，即a：b=1。
其中，在灰色调掩膜4的第一间隙13中，第一缝隙14的个数与第二缝隙15的个数之和等于第二挡光条的个数加1；并且，第一间隙13的宽度为第一间隙13内所有第二挡光条12的长度、第一缝隙14的宽度与第二缝隙15的宽度之和。即在灰色调掩膜4的灰阶区域内，缝隙的个数始终比挡光条的个数多1，灰阶区域的宽度为挡光条的长度与缝隙的宽度和。
其中，灰色调掩膜4的开口率为在第一间隙13内所有第一缝隙14的宽度与第二缝隙15的宽度之和与第一间隙13的比值。例如，在图2中，第一挡光条的长度为4μm，第二挡光条的长度为0.8μm，第一缝隙14与第二缝隙15的宽度均为0.8μm，那么第一间隙13的宽度也为4μm，即第一间隙13的宽度=2a+3b，其中，第一缝隙14的宽度或第二缝隙15的宽度均用b表示。灰色调掩膜4的开口率=3b/(2a+3b)，所以灰色调掩膜4的开口率为60.0%。其中，第一挡光条11的长度与第一间隙13的宽度相等。
综上，本实施例提示的灰色调掩膜4只要求第二挡光条12的长度a与第一缝隙14的宽度b的比值范围满足：0.9<a/b<1.1，并且满足传统工艺的要求，即第二挡光条12的长度a小于曝光系统的最小分辨率且大于灰色调掩膜4的制作系统的分辨率，可以得到较好的显影后的光阻轮廓，实现灰阶掩膜效果，而对于第一挡光条11的长度及第一间隙13的宽度的不同设计没有要求，并且对于第一间隙13内的第二挡光条12及第一缝隙14或第二缝隙15的个数也没有限制，从而具有更好的兼容性；并且，通过限制灰阶区域内挡光条的长度与缝隙的宽度的比值范围0.9<a/b<1.1，相对于传统的灰阶掩膜进行了优化设计，缩小了灰色调掩膜4的设计范围，更直接地得到合理的设计方案，减少实验成本。
结合图1，请进一步参看图3，图3为本发明灰色调掩膜1的制作方法流程示意图。该灰色调掩膜1的制作方法包括以下步骤：
S11：提供一基板2，其中，该基板2上铺设有不透光材料层3。
其中，该基板2为石英玻璃，其具有高纯度、低反射率及低热膨胀系数。不透光材料优选为铬，不透光铬层3通过溅射的方法镀在基板上，厚度约为0.1μm。
S12：采用准分子激光烧蚀工艺对基板2进行刻蚀，以形成灰色调掩膜1。
采用一光罩，该光罩具有透光区域及不透光区域，并且光罩的不透光区域对应灰色调掩膜1的第一挡光条11及第二挡光条12，透光区域对应灰色调掩膜1的第一缝隙14。利用激光穿过光罩的透光区域，以在基板2的不透光材料层3上刻蚀出第一缝隙14，而没有经过激光刻蚀的不透光材料层3上形成相应光罩不透光区域的第一挡光条11及第二挡光条12。
因此，利用与灰色调掩膜1具有相应的图形的光罩，采用激光刻蚀工艺，制造出本实施例的灰色调掩膜1，该灰色调掩膜1包括第一挡光条11和第二挡光条12，任意两个相邻的第一挡光条11之间形成第一间隙13，第二挡光条12设置在第一间隙13内，第一间隙13包括相邻的第一挡光条11和第二挡光条12之间形成的第一缝隙14，其中，第二挡光条12的长度为a，所述第一缝隙14的宽度为b，第二挡光条12的长度a与第一缝隙14的宽度b的比值满足：0.9<a/b<1.1。
此外，还可以根据需要，在第一间隙13内设置至少两个第二挡光条12，并且，任意两个相邻的第二挡光条12之间形成第二缝隙15，该第二缝隙15的宽度与第一缝隙14的宽度相等，亦即，任意两个挡光条之间等宽设置。
其中，由于现有技术的限制，第二挡光条12的长度a必须大于灰色调掩膜1制作系统的分辨率，并且小于黄光曝光系统的最小分辨率。
综上所述，区别于现有技术，本发明的灰色调掩膜包括第一挡光条和第二挡光条，任意两个相邻的第一挡光条之间形成第一间隙，第二挡光条设置在第一间隙内，第一间隙包括相邻的第一挡光条和第二挡光条之间形成的第一缝隙，其中，第二挡光条的长度为a，第一缝隙的宽度为b，第二挡光条的长度a与第一缝隙的宽度b的比值满足：0.9<a/b<1.1，因而，本发明的灰色调掩膜的灰阶区域内的第二挡光条的长度除了满足传统技术的a必须小于黄光曝光系统的最小分辨率且大于灰色调掩膜制作系统的分辨率，并且，本发明的灰色调掩膜的灰阶区域内的第二挡光条与透光缝隙，即第一缝隙的宽度比值范围满足：0.9<a/b<1.1，从而，缩小了灰色调掩膜的设计范围，能更直接地得到合理的设计方案，减少实验成本，并且，得到较好的显影后的光阻轮廓。
以上所述仅为本发明的实施例，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (15)

  1. 一种灰色调掩膜，其中，所述灰色调掩膜包括第一挡光条和第二挡光条，任意两个相邻的所述第一挡光条之间形成第一间隙，所述第二挡光条设置在所述第一间隙内，所述第一间隙包括相邻的所述第一挡光条和所述第二挡光条之间形成的第一缝隙，其中，所述第二挡光条的长度为a，所述第一缝隙的宽度为b，所述第二挡光条的长度a与所述第一缝隙的宽度b的比值满足：0.9<a/b<1.1，所述第二挡光条的长度a小于曝光系统的分辨率，且大于所述灰色调掩膜制作系统的分辨率，当所述第一间隙设置有至少两个所述第二挡光条时，两个相邻的所述第二挡光条之间形成第二缝隙，所述第二缝隙的宽度与所述第一缝隙的宽度相等。
  2. 根据权利要求1所述的灰色调掩膜，其中，所述第二挡光条的长度等于所述第一缝隙的宽度。
  3. 根据权利要求1所述的灰色调掩膜，其中，在所述第一间隙中，所述第一缝隙的个数与所述第二缝隙的个数之和等于所述第二挡光条的个数加1。
  4. 根据权利要求3所述的灰色调掩膜，其中，所述第一间隙的宽度为在所述第一间隙内的所有所述第二挡光条的长度、所述第一缝隙的宽度及所述第二缝隙的宽度之和。
  5. 根据权利要求4所述的灰色调掩膜，其中，所述灰色调掩膜的开口率为在所述第一间隙内所有所述第一缝隙的宽度与所述第二缝隙的宽度之和与所述第一间隙的宽度的比值。
  6. 一种灰色调掩膜，其中，所述灰色调掩膜包括第一挡光条和第二挡光条，任意两个相邻的所述第一挡光条之间形成第一间隙，所述第二挡光条设置在所述第一间隙内，所述第一间隙包括相邻的所述第一挡光条和所述第二挡光条之间形成的第一缝隙，其中，所述第二挡光条的长度为a，所述第一缝隙的宽度为b，所述第二挡光条的长度a与所述第一缝隙的宽度b的比值满足：0.9<a/b<1.1。
  7. 根据权利要求6所述的灰色调掩膜，其中，所述第二挡光条的长度a小于曝光系统的分辨率，且大于所述灰色调掩膜制作系统的分辨率。
  8. 根据权利要求6所述的灰色调掩膜，其中，所述第二挡光条的长度等于所述第一缝隙的宽度。
  9. 根据权利要求6所述的灰色调掩膜，其中，当所述第一间隙设置有至少两个所述第二挡光条时，两个相邻的所述第二挡光条之间形成第二缝隙，所述第二缝隙的宽度与所述第一缝隙的宽度相等。
  10. 根据权利要求9所述的灰色调掩膜，其中，在所述第一间隙中，所述第一缝隙的个数与所述第二缝隙的个数之和等于所述第二挡光条的个数加1。
  11. 根据权利要求10所述的灰色调掩膜，其中，所述第一间隙的宽度为在所述第一间隙内的所有所述第二挡光条的长度、所述第一缝隙的宽度及所述第二缝隙的宽度之和。
  12. 根据权利要求11所述的灰色调掩膜，其中，所述灰色调掩膜的开口率为在所述第一间隙内所有所述第一缝隙的宽度与所述第二缝隙的宽度之和与所述第一间隙的宽度的比值。
  13. 根据权利要求6所述的灰色调掩膜，其中，所述第一挡光条的长度等于所述第一间隙的宽度。
  14. 一种灰色调掩膜的制作方法，其中，所述制作方法包括：
    提供基板，其中，所述基板上铺设有不透光材料层；
    采用准分子激光烧蚀工艺对所述基板进行刻蚀，以形成所述灰色调掩膜；
    其中，所述灰色调掩膜包括第一挡光条和第二挡光条，任意两个相邻的所述第一挡光条之间形成第一间隙，所述第二挡光条设置在所述第一间隙内，所述第一间隙包括相邻的所述第一挡光条和所述第二挡光条之间形成的第一缝隙，其中，所述第二挡光条的长度为a，所述第一缝隙的宽度为b，所述第二挡光条的长度a与所述第一缝隙的宽度b的比值满足：0.9<a/b<1.1。
  15. 根据权利要求14所述的制作方法，其中，当所述第一间隙设置有至少两个所述第二挡光条时，两个相邻的所述第二挡光条之间形成第二缝隙，所述第二缝隙的宽度与所述第一缝隙的宽度相等。
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