WO2016156162A1 - Capteur de pression capacitif - Google Patents

Capteur de pression capacitif Download PDF

Info

Publication number
WO2016156162A1
WO2016156162A1 PCT/EP2016/056436 EP2016056436W WO2016156162A1 WO 2016156162 A1 WO2016156162 A1 WO 2016156162A1 EP 2016056436 W EP2016056436 W EP 2016056436W WO 2016156162 A1 WO2016156162 A1 WO 2016156162A1
Authority
WO
WIPO (PCT)
Prior art keywords
measuring
dependent
pressure
electrode
esp
Prior art date
Application number
PCT/EP2016/056436
Other languages
German (de)
English (en)
Inventor
Stefan Kraus
Karl-Peter Hauptvogel
Sascha KOCH
Andreas Rossberg
Thomas Uehlin
Martin BURGARD
Nils Ponath
Ulfert Drewes
Original Assignee
Endress+Hauser Gmbh+Co. Kg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Endress+Hauser Gmbh+Co. Kg filed Critical Endress+Hauser Gmbh+Co. Kg
Publication of WO2016156162A1 publication Critical patent/WO2016156162A1/fr

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
    • G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/04—Means for compensating for effects of changes of temperature, i.e. other than electric compensation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/12—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in capacitance, i.e. electric circuits therefor
    • G01L9/125—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in capacitance, i.e. electric circuits therefor with temperature compensating means

Definitions

  • the invention relates to a capacitive pressure sensor, with a pressure chamber including a pressure chamber arranged on a base body, acted upon by a pressure-elastically deformable measuring membrane, an outer edge of the measuring membrane enclosing the pressure chamber with an outer edge of the measuring membrane facing end side of the body connecting Addition, in particular an active brazing, and a capacitive electromechanical transducer for metrological detection of a dependent of the pressure to be measured deflection of the measuring membrane, the at least one arranged on a side facing the base body side of the measuring membrane membrane electrode and one on one of
  • Capacitive pressure sensors can be designed as absolute pressure sensors, as relative pressure sensors or as differential pressure sensors, and are used in industrial applications
  • Measurement technology used to measure pressures.
  • capacitive ceramic pressure sensors in which at least the
  • Measuring diaphragm made of ceramic has the advantage that the ceramic measuring membrane can be exposed directly to the medium whose pressure is to be measured.
  • ceramic has particularly advantageous chemical and mechanical properties for use in pressure measurement technology.
  • Esp. are diaphragm seals that transmit the pressure to be measured by means of a pressure-transmitting liquid to the pressure sensor, not required.
  • a capacitive electromechanical transducer for metrological detection of a dependent of the pressure to be measured deflection of the measuring membrane the at least one arranged by a arranged on a base body side of the diaphragm membrane electrode and a arranged on one of the measuring membrane facing the end face of the main body electrode body Capacitor includes.
  • These pressure sensors are manufactured by prefabricating the measuring diaphragm and the base body, and the membrane electrode is mounted on the measuring diaphragm and the diaphragm
  • Base electrode are applied to the body. Subsequently, a solder layer is introduced from an active brazing material between the measuring membrane and the base body, and the assembly is heated under vacuum in total to a lying above the melting temperature of the solder soldering solder.
  • EP 0 445 382 A2 DE it is described to apply a protective layer of an oxide of the electrode material to the electrodes, which prevents solder which melts during active brazing from flowing over the electrodes.
  • electrodes made of tantalum are preferably used for this purpose, on which a protective layer of tantalum pentoxide is arranged.
  • Tantalum pentoxide is known as an insulator with very high permittivity, and is used e.g. in
  • Electrolytic capacitors as well as in the semiconductor industry as - often as high-k
  • Dielectric called - used high-quality dielectric.
  • the protective layer of tantalum pentoxide described in EP 0 445 382 A2 DE is produced by thermal or anodic oxidation of the tantalum electrodes.
  • the application of the electrodes and the generation of the oxide layer on the electrodes represent two separate process steps, which are carried out in two different systems.
  • the application of the electrodes e.g. takes place in a sputtering system, in which the electrodes are sputtered as a coating on measuring membrane and body
  • the thermal oxidation takes place in a separate from the sputtering furnace.
  • the surfaces of the electrodes during transport from the sputtering system to the oven by particles, fibers or touch pollute, resulting in rejects.
  • the thermal oxidation of tantalum electrodes is a time-consuming process that regularly takes several hours, z. B. 4 to 5 hours to complete.
  • DE 10 2013 106 045 A1 describes a pressure sensor in which the solder stop and membrane electrode are prepared from the same material system.
  • a membrane electrode is used which has titanium oxide.
  • titanium oxide is conductive and can therefore be used as an electrode material.
  • non-stoichiometric titanium oxide is preferably used, since the latter has a higher conductivity than stoichiometric titanium oxide.
  • DE 10 2013 106 045 A1 describes increasing the conductivity of the electrode material by doping with Cr, Nb or W ,.
  • the preparation of the membrane electrode is carried out according to DE 10 2013 106 045 A1, preferably by reactive sputtering.
  • the invention comprises a pressure sensor, with
  • a pressure diaphragm which can be acted upon by a pressure chamber and which is arranged on a base body and can be acted upon by a pressure, is elastically deformable in a pressure-dependent manner
  • a capacitive electromechanical transducer for metrological detection of a dependent of the pressure to be measured deflection of the measuring membrane the at least one arranged on a side facing the base of the measuring membrane membrane electrode and one on one of the measuring membrane facing
  • the membrane electrode consists of semiconducting, doped tantalum oxide, in particular semiconducting, doped ditantalum pentoxide.
  • the main body electrode consists of semiconducting, doped tantalum oxide, in particular semiconducting, doped ditantalum pentoxide.
  • the doping comprises titanium (Ti), wherein the doped tantalum oxide esp.
  • Doped dopant tallow Ti 2 0 5 ), in which a titanium content of the titanium-tantalum metal content of the doped Ditantalpentoxids on the order of 10 mol.%.
  • the semiconductive membrane electrode has an impedance dependent on the temperature of the measuring membrane
  • a measuring circuit is provided, which is the temperature-dependent impedance, in particular its ohmic component, or dependent on the temperature-dependent impedance
  • Measuring variable esp. A time constant of a charging and / or discharging the capacitor formed by the membrane electrode and the main body electrode or one of a caused by the capacitor in an AC circuit
  • Phase shift between AC and AC voltage dependent variable, esp. A dielectric power loss of the capacitor or tangent of a loss angle, or a quality or attenuation of a condenser containing, esp. In resonance operated, resonant circuit determined.
  • the measuring circuit based on the impedance or the impedance-dependent
  • Measured variable determines a temperature of the measuring membrane, and in particular for the compensation of a temperature-dependent measurement error of the pressure sensor provides or used.
  • the measuring circuit based on the impedance or the impedance-dependent
  • the invention comprises a method for producing a pressure sensor according to the invention, which is characterized in that
  • the membrane electrode is applied to the side of the measuring membrane facing the base body, in particular by gas-phase deposition, in particular by physical vapor deposition, in particular by sputtering, in particular by DC or magnetron sputtering, is applied,
  • Main body is applied, esp. By vapor deposition, esp. By physical vapor deposition, in particular by sputtering, esp. By DC or magnetron sputtering applied, and
  • sputtering takes place by means of a sputtering target consisting of a semiconducting, doped ditantalpine oxide, in particular titanium-doped ditantalum pentoxide.
  • the invention has the advantage that the membrane electrode consisting of semiconducting, doped tantalum oxide, esp. Doped Ditantalpentoxid, at the same time forms a Lotstopp, which counteracts an inflow of molten active brazing material into the pressure chamber of the pressure sensor during the Aktivhartlötens.
  • the membrane electrodes can be produced in a single process step comparatively quickly and inexpensively with low variance. Since the doped tantalum pentoxide is semiconducting, the membrane electrode can be deposited by DC or magnetron sputtering. Thus, no high-frequency sputtering system is required, as required for sputtering insulators.
  • DC and magnetron sputtering By means of DC and magnetron sputtering, thin, essentially non-porous layers can be produced in reproducibly high quality.
  • DC and magnetron sputtering moreover has the advantage that the composition of the sputtered layers is easier to control than reactive sputtering.
  • Fig. 1 shows: a capacitive pressure sensor.
  • Fig. 1 shows a section through an embodiment of a pressure sensor.
  • This comprises a pressure membrane p acted upon and pressure-dependent elastically deformable measuring membrane 1, which is arranged on a base body 3.
  • the measuring diaphragm 1 and preferably also the base body 3 are made of ceramic, e.g. made of aluminum oxide
  • the illustrated pressure sensor can be designed as an absolute pressure sensor.
  • the pressure chamber 5 enclosed under the measuring diaphragm 1 is evacuated.
  • it can be configured as a relative pressure sensor, in that the pressure chamber 5 is supplied with a reference pressure p ref , for example an atmospheric pressure, via a bore 9 leading through the main body 3, shown in dashed lines in FIG. 1, relative to that acting on the measuring diaphragm 1 Pressure p is to be detected.
  • a reference pressure p ref for example an atmospheric pressure
  • the pressure sensor comprises an electromechanical transducer which serves to metrologically detect a pressure-dependent deformation of the measuring diaphragm 1.
  • This includes e.g. at least one capacitor with a depending on the pressure-induced deflection of the measuring membrane 1 changing capacity of a on a base body 3 facing side of the measuring membrane 1 applied membrane electrode 1 1 and one of the measuring membrane 1 facing end of
  • Base body 3 applied base body electrode 13 has.
  • the membrane electrode 1 1 extends over the base body 3 facing side of the measuring membrane 1 to the joint 7, and is preferably on the preferably as Aktivhartlötung
  • Counterelectrode 13 is preferably carried out via a contact pin 15 inserted in a bore leading through the base body 3, e.g. a tantalum pin, which produces an electrically conductive connection to the main body electrode 13.
  • a contact pin 15 inserted in a bore leading through the base body 3, e.g. a tantalum pin, which produces an electrically conductive connection to the main body electrode 13.
  • the pressure-dependent capacity of this capacitor or its changes are detected by a connected to the membrane electrode 1 1 and the main body electrode 13, not shown here measurement circuit and converted into a pressure-dependent measurement signal, which then to display, for further processing and / or Evaluation is available.
  • the membrane electrode 1 1 consists of semiconducting, doped
  • Tantalum oxide preferably of semiconducting, doped ditantalum pentoxide (Ta20 5 ).
  • this is particularly suitable for doping with titanium (Ti).
  • Ti titanium
  • a doping is suitable in which the titanium content of the titanium-tantalum metal content of the doped
  • porous electrodes are unsuitable for use in pressure sensors, since porous electrodes in the pressure chamber 5 absorb moisture penetrating, which then to impairments of the
  • the membrane electrode 1 Preferably, not only the membrane electrode 1 1, but also the main body electrode 13 of the doped, semiconducting tantalum oxide, preferably the doped semiconducting Ditantalpentoxid (Ta20 5 ).
  • Doped tantalum pentoxide has the advantage that it is due to the doping in
  • the semiconductive membrane electrode 1 1 has the advantage of having a temperature-dependent impedance as a semiconductor.
  • Pressure sensor provides or uses. For this purpose, by means of a measuring circuit, not shown here, the impedance of the membrane electrode 1 1, in particular its ohmic component, or dependent on the temperature-dependent impedance
  • Measured variable determined As described in DE 10 2013 1 14 734.8, for this purpose, a measured variable dependent on the temperature-dependent impedance of the membrane electrode 1 1 of the capacitor formed by the membrane electrode 1 1 and the main body electrode 13 can be detected by measurement using the measuring circuit. In particular, a time constant of a charging and / or discharging process of the
  • Capacitor or one of a caused by the capacitor in an AC circuit phase shift ⁇ between AC and AC voltage dependent variable, such as a dielectric loss of the
  • the deformation of the measuring membrane 1 can be determined by the capacitance of the capacitor.
  • Pressure sensors can be used, which have further electrodes.
  • An example of this are pressure sensors described in DE 10 201 1078 557 A1, the electromechanical transducers of which have two capacitors, one of which is formed by the membrane electrode and a first main body electrode arranged centrally on the end face of the main body facing the measuring diaphragm, and a second main body electrode which is surrounded on the outside by the membrane electrode and the first main body electrode is formed.
  • Differential pressure sensors can be used, the at least one including an
  • Pressure chamber arranged on a base body can be acted upon with a pressure, pressure-dependent elastically deformable measuring membrane, the outer edge is connected to the inclusion of a pressure chamber with an outer edge of the measuring diaphragm facing end of the body via a joint, esp.
  • An active brazing, and at least one capacitive electromechanical transducer comprising at least one arranged by a arranged on a side facing the base of the measuring membrane membrane electrode and a capacitor arranged on one of the measuring membrane facing end side of the base body arranged base electrode.
  • Pressure sensors according to the invention are produced by prefabricating the measuring membrane 1 and base body 3, the membrane electrode 1 1 on
  • the side of the measuring diaphragm 1 facing the main body 3 is applied, and the main body electrode 13 is applied to the end face of the main body 3 facing the measuring diaphragm 1.
  • the application of the membrane electrode 1 1 and the main body electrode 13 is preferably carried out by vapor deposition, preferably by physical
  • a sputtering target consisting of semiconducting, doped ditantalum pentoxide (Ta 2 O 5 ), which is doped with, for example, titanium, is preferably used.
  • the application of the membrane electrode 1 1 and the main body electrode 13 is preferably carried out by means of DC or magnetron sputtering. By DC, as well as by magnetron sputtering can thin, in
  • Substantially non-porous layers can be produced in reproducibly high quality.
  • DC and magnetron sputtering moreover has the advantage that the composition of the sputtered layers is easier to control than is the case with reactive sputtering.
  • an electrical connection of the counter electrode 13 can be provided by the contact pin 15, for example a tantalum pin, is inserted into the leading through the body 3 bore, and produces an electrically conductive connection to the main body electrode 13 ,
  • the tantalum electrodes provided at the outset known from the prior art with a protective layer of ditantalum pentoxide produced by thermal oxidation no further operation is required for producing the electrodes according to the invention.
  • the entire manufacturing process of the electrodes thus takes place in a single system. Accordingly, no transport of the components from one system to another is required, in which the surfaces of the components could be contaminated by particles, fibers or touch. This avoids rejects.
  • the sputtering process is a relatively fast executable process, which usually takes about 30 minutes. In comparison, for thermal oxidation of tantalum electrodes, several hours, e.g. 4 to 5 hours, needed.
  • Pressure chamber 5 pressure-tightly connected by active brazing.
  • a solder layer is arranged between the outer facing edges of the base body 3 and the measuring membrane 1 to be joined by the joining 7.
  • Lot Mrs can e.g. in the manner described in EP 490 807 A1 as solder paste or in the form of a preformed solder preform, e.g. a solder ring, are introduced.
  • joints 7 having a height of greater than or equal to 30 ⁇ m can be produced.
  • joints 7 can be produced with a height of the order of magnitude of 10 ⁇ m.
  • the arrangement formed by the main body 3, the solder layer and the measuring membrane 1 is heated in total to a soldering temperature above the melting temperature of the active hard solder and heated there over a longer period of time, in particular a period of 5 min to 15 min, held.
  • a soldering temperature above the melting temperature of the active hard solder in particular a period of 5 min to 15 min, held.
  • Aktivhartlöt compiler be used in which the solder layer is completely melted under vacuum by laser radiation.
  • the membrane electrode 1 1 which adjoins the active hard solder, acts as a solder stop, which counteracts an inflow of molten active brazing solder into the pressure chamber 5.
  • the achieved by DC or magnetron sputtering precise adjustment of the composition of the membrane electrode 1 1 has the advantage that on the targeted adjustment of the composition of the temperature range by the membrane electrode 1 1 forms an effective Lotstopp, can be increased.

Abstract

L'invention concerne un capteur de pression capacitif comprenant : une membrane de mesure (1) disposée sur un corps de base (3) en incluant une chambre de pression (5), pouvant être soumise à l'action d'une pression (p), pouvant être déformée élastiquement selon la pression ; une brasure forte active (7) reliant un bord extérieur de la membrane de mesure (1), en incluant la chambre de pression (5) à un bord extérieur d'un côté frontal, tourné vers la membrane de mesure (1), du corps de base (3) ; et un convertisseur électromécanique capacitif servant à détecter, par une technique de mesure, une déviation, dépendant de la pression (p) à mesurer, de la membrane de mesure (1), lequel convertisseur comprend au moins un condensateur formé par une électrode de membrane (11) disposée sur un côté, tourné vers le corps de base (3), de la membrane de mesure (1) et par une électrode de corps de base (13) disposée sur un côté frontal, tourné vers la membrane de mesure (1), du corps de base (3). L'invention vise à proposer un capteur de pression capacitif pouvant être fabriqué à moindres coûts tout en présentant une faible variance à qualité élevée. Selon l'invention, l'électrode de membrane (11) est constituée à cet effet d'un oxyde de tantale dopé semi-conducteur, en particulier d'un pentoxyde de ditantale (Ta2O5) dopé semi-conducteur.
PCT/EP2016/056436 2015-04-01 2016-03-23 Capteur de pression capacitif WO2016156162A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102015105057.9A DE102015105057A1 (de) 2015-04-01 2015-04-01 Kapazitiver Drucksensor
DE102015105057.9 2015-04-01

Publications (1)

Publication Number Publication Date
WO2016156162A1 true WO2016156162A1 (fr) 2016-10-06

Family

ID=55588304

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2016/056436 WO2016156162A1 (fr) 2015-04-01 2016-03-23 Capteur de pression capacitif

Country Status (2)

Country Link
DE (1) DE102015105057A1 (fr)
WO (1) WO2016156162A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10612991B1 (en) * 2017-08-25 2020-04-07 Fluke Corporation High dynamic range capacitive pressure sensor

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017130393A1 (de) * 2017-12-18 2019-06-19 Endress+Hauser SE+Co. KG Verfahren zum Betreiben eines Drucksensors
DE102017130426A1 (de) * 2017-12-19 2019-06-19 Endress+Hauser SE+Co. KG Drucksensor

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6278379B1 (en) * 1998-04-02 2001-08-21 Georgia Tech Research Corporation System, method, and sensors for sensing physical properties
US20040040382A1 (en) * 2000-07-20 2004-03-04 Thomas Peterson Sensor usable in ultra pure and highly corrosive environments
US20060081058A1 (en) * 2004-10-18 2006-04-20 Kia Silverbrook Pressure sensor with thin membrane
US20070013014A1 (en) * 2005-05-03 2007-01-18 Shuwen Guo High temperature resistant solid state pressure sensor
US20080110269A1 (en) * 2006-11-13 2008-05-15 Carsten Strietzel Diaphragm vacuum measuring cell and method for the production of such measuring cell
EP2463635A1 (fr) * 2010-12-07 2012-06-13 VEGA Grieshaber KG Cellule de mesure de pression

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3402078A (en) 1968-09-17 Gen Electric Solid stabilized zirconia or thoria having a layer of tantalum pentoxide and titanium oxide thereon
US5050034A (en) * 1990-01-22 1991-09-17 Endress U. Hauser Gmbh U. Co. Pressure sensor and method of manufacturing same
DE4129414A1 (de) 1990-11-13 1993-03-11 Endress Hauser Gmbh Co Verwendung eines speziellen tiegels beim melt-spinning einer aktivlot-legierung
DE102010030156A1 (de) * 2010-06-16 2011-12-22 Endress + Hauser Gmbh + Co. Kg Keramischer Drucksensor
DE102010043119A1 (de) 2010-10-29 2012-05-03 Endress + Hauser Gmbh + Co. Kg Verfahren zum Herstellen einer Verbindung zwischen zwei Keramikteilen, insbesondere von Teilen eines Drucksensors, und ein keramisches Produkt, insbesondere einen keramischen Drucksensor
DE102011005665A1 (de) 2011-03-16 2012-09-20 Endress + Hauser Gmbh + Co. Kg Keramische Druckmesszelle und Verfahren zu ihrer Herstellung
DE102011078557A1 (de) 2011-07-01 2013-01-03 Endress + Hauser Gmbh + Co. Kg Verfahren zum Betreiben eines Absolut- oder Relativdrucksensors mit einem kapazitiven Wandler
DE102013106045A1 (de) 2013-06-11 2014-12-11 Endress + Hauser Gmbh + Co. Kg Kapazitive, keramische Druckmesszelle und Verfahren zu ihrer Herstellung
DE102013114741A1 (de) * 2013-12-20 2015-06-25 Endress + Hauser Gmbh + Co. Kg Drucksensor
DE102013114734A1 (de) 2013-12-20 2015-07-09 Endress + Hauser Gmbh + Co. Kg Kapazitive Druckmesszelle mit mindestens einem Temperatursensor und Druckmessverfahren

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6278379B1 (en) * 1998-04-02 2001-08-21 Georgia Tech Research Corporation System, method, and sensors for sensing physical properties
US20040040382A1 (en) * 2000-07-20 2004-03-04 Thomas Peterson Sensor usable in ultra pure and highly corrosive environments
US20060081058A1 (en) * 2004-10-18 2006-04-20 Kia Silverbrook Pressure sensor with thin membrane
US20070013014A1 (en) * 2005-05-03 2007-01-18 Shuwen Guo High temperature resistant solid state pressure sensor
US20080110269A1 (en) * 2006-11-13 2008-05-15 Carsten Strietzel Diaphragm vacuum measuring cell and method for the production of such measuring cell
EP2463635A1 (fr) * 2010-12-07 2012-06-13 VEGA Grieshaber KG Cellule de mesure de pression

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10612991B1 (en) * 2017-08-25 2020-04-07 Fluke Corporation High dynamic range capacitive pressure sensor
US11248975B2 (en) 2017-08-25 2022-02-15 Fluke Corporation High dynamic range capacitive pressure sensor

Also Published As

Publication number Publication date
DE102015105057A1 (de) 2016-10-06

Similar Documents

Publication Publication Date Title
EP3094951B1 (fr) Cellule de mesure de pression capacitive pourvue d'un capteur de température et procédé de mesure de pression
EP1336086B1 (fr) Cellule de mesure de pression
EP2162714B1 (fr) Capteur de pression capacitif
EP0544934B1 (fr) Méthode pour stabiliser la surface d'objets devant subir un traitement thermique sous vide
EP1040333B1 (fr) Membrane pour cellule de mesure sous vide a capacite
EP2454574A1 (fr) Cellule de mesure de pression céramique capacitive et capteur de pression équipé d une telle cellule
EP2904363B1 (fr) Capteur de pression doté d'une couche de recouvrement
EP3008440B1 (fr) Cellule de mesure de pression capacitive en céramique et procédé de fabrication de ladite cellule de mesure de pression capacitive en céramique
EP3080571B1 (fr) Capteur de pression
WO2016156162A1 (fr) Capteur de pression capacitif
DE102010021914B4 (de) Sensorvorrichtung für physikalische Größe und Herstellungsverfahren derselben
EP3204744A1 (fr) Dispositif de mesure
WO2016026541A1 (fr) Cellule de mesure de pression
EP1061351B1 (fr) Capteur de pression capacitif en céramique
EP3304019B1 (fr) Capteur de pression à brasure forte active
DE102014210122A1 (de) Vorrichtung zum Bestimmen eines Werts einer zu messenden Eigenschaft eines Fluids, Verfahren zum Betreiben einer Vorrichtung zum Bestimmen eines Werts einer zu messenden Eigenschaft eines Fluids sowie Verfahren zum Herstellen einer Vorrichtung zum Bestimmen eines Werts einer zu messenden Eigenschaft eines Fluids
DE3108300C2 (de) Druckmeßdose und Verfahren zu deren Herstellung
EP3173760A1 (fr) Capteur de pression relative
EP0150878A2 (fr) Procédé de fabrication d'un système de jauge de contrainte en couche mince
WO2013152927A2 (fr) Cellule de mesure de la pression et procédé de fabrication
DE102016102775A1 (de) Kapazitiver Drucksensor
WO2016058744A1 (fr) Capteur de pression
DE202015103451U1 (de) Kapazitiver Keramikdrucksensor
DE102017114299A1 (de) Verfahren zur Herstellung einer Druckmesseinrichtung
WO2016087147A1 (fr) Capteur capacitif de pression relative

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 16711316

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 16711316

Country of ref document: EP

Kind code of ref document: A1