WO2016153155A1 - Procédé de fabrication de capteur de pression à base biomimétique et capteur de pression ainsi fabriqué - Google Patents

Procédé de fabrication de capteur de pression à base biomimétique et capteur de pression ainsi fabriqué Download PDF

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Publication number
WO2016153155A1
WO2016153155A1 PCT/KR2015/014384 KR2015014384W WO2016153155A1 WO 2016153155 A1 WO2016153155 A1 WO 2016153155A1 KR 2015014384 W KR2015014384 W KR 2015014384W WO 2016153155 A1 WO2016153155 A1 WO 2016153155A1
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WO
WIPO (PCT)
Prior art keywords
nanowires
pressure sensor
metal film
pdms
coated
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PCT/KR2015/014384
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English (en)
Korean (ko)
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고현협
하민정
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울산과학기술원
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Publication of WO2016153155A1 publication Critical patent/WO2016153155A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/16—Measuring force or stress, in general using properties of piezoelectric devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress

Definitions

  • the present invention relates to a bio-simulating pressure sensor, and more particularly, hierarchical by fusing the microstructure patterning of organic materials and the nanostructure of inorganic materials.
  • the present invention relates to a method for manufacturing a bio simulation-based pressure sensor which improves performance as a pressure sensor by maximizing surface area by interlocking the fabricated structure.
  • Human skin can experience real touch, vibration, texture, and hardness through several types of tactile receptors.
  • Human skin in particular, can distinguish between static and dynamic mechanical stimuli due to different types of mechanical receptors, such as Ruffini Organs and Pancinian blood cells.
  • Slow-adapted lupine organs are suitable for static sensing, such as gripping objects at constant pressure, while fast-adapted Pacinian blood cells are usually suitable for detecting dynamic stimuli of high-frequency vibrations.
  • Typical sensing materials used in electronic skin are polymer conductive polymers with high dielectric constants (k) (poly (3-hexylthiophene), polypyrrole, polyaniline), or semiconductors (silicon, zinc oxide, cadmium selenide) and elastomers.
  • conductive materials such as nanomaterial metals (CNTs, graphene, gold, and silver) contained in (elastomers).
  • the conductive polymer and the composite pressure sensor has a viscoelastic (viscoelastic), there is a problem that the reaction rate is slow and the sensor performance changes with respect to the external temperature also frequently.
  • piezoresistive method that can be detected by changing the resistance as the contact area changes with the pressure recently, and the capacitance that can be detected by changing the capacitance as the thickness of the dielectric layer changes according to the external pressure.
  • Capacitive, piezoelectric, which reacts to external pressure using piezoelectric materials, and triboelectirc electronic skin that senses the movement of objects using electrostatic properties commonly seen in everyday life. Etc. are being developed.
  • the present invention is to fuse the microstructure patterning (organic) material of the organic material (nanostructure) and the nanostructure (organic structure) of the inorganic material (inorganic) to produce a hierarchical structure It is an object of the present invention to provide a method for manufacturing a bio simulation-based pressure sensor that improves the performance as a pressure sensor by maximizing the surface area by interlocking.
  • the present invention is to provide a pressure sensor capable of recognizing both static and dynamic pressure, such as human skin using a nano-material capable of both resistance / piezoelectric signal transmission. It is done.
  • a method of manufacturing a bio simulation-based pressure sensor comprising: (a) forming a plurality of microfillers on each of a pair of PDMS substrates from a silicon microhole pattern; (b) growing nanowires on a plurality of microfillers formed on the pair of PDMS substrates; (c) coating any one of the pair of PDMS substrates with a metal film on the microfiller on which the nanowires are grown; And (d) engaging the PDMS substrate on which the nanowires are grown with the PDMS substrate partially coated with the metal film in step (c) of the pair of PDMS substrates, wherein (b) The nanowire of the PDMS substrate of step) and the nanowire of the step (c) are connected to each other so that the pressure sensor of the piezoresistive method, the nanowire of the PDMS substrate of the step (b) and the metal film of the step (c) The coated nanowires are interlocked to simultaneously implement a piezo
  • a hierarchical structure is manufactured by fusing a microstructure patterning of an organic material and a nanostructure of an inorganic material. By interlocking with each other, the surface area is maximized, and effective pressure transmission is possible, thereby improving performance as a pressure sensor.
  • bio simulation-based pressure sensor manufacturing method by using an inorganic material of non-viscoelastic properties is very fast reaction speed compared to the conventional pressure sensor, and has an excellent stability against external temperature changes.
  • the method for manufacturing a bio simulation-based pressure sensor according to the present invention can detect both static and dynamic external pressure by using the structural and material-specific piezolectic properties of zinc oxide (ZnO). It has an effect.
  • FIG. 1 illustrates a biobased hierarchical ZnO nanowire array
  • FIG. 2 is a diagram comparing the static pressure sensing capability of the electronic skin based on the interlocking structure of the hierarchical ZnO nanowire array;
  • 3 is a view for explaining the dynamic pressure sensing capability of the electronic skin based on the engagement structure of the hierarchical ZnO nanowire array;
  • FIG. 6 is a graph illustrating the relationship between the frequency and the current of the piezoresistive and piezoelectric methods.
  • FIG. 1 is a diagram illustrating a manufacturing process of a bio simulation-based pressure sensor according to the present invention.
  • a microfiller is formed on a PDMS (polydimethylsiloxane) substrate through a soft lithography method from a silicon microhole pattern (S100).
  • PDMS polydimethylsiloxane
  • FIG. 1 illustrates the formation of a micropillar on one PDMS (polydimethylsiloxane) substrate
  • the microfiller is substantially formed on a pair of PDMS (polydimethylsiloxane) substrates in step S100.
  • a hierarchical zinc oxide layer on the pair of PDMS micropillar arrays is formed through hydrothermal synthesis to fabricate a hierarchical micro and nanostructured interlocking structure for flexible electronic skin (or pressure sensor).
  • ZnO performing a step of forming a nanowire (NW) (S200).
  • the zinc oxide nanowire array according to the hydrothermal synthesis method can be fixed at low cost, large area and low temperature, and can be grown on a flexible substrate with high aspect ratio according to optimized experimental conditions.
  • the PDMS microarray was formed from the original microphone-hole patterned silicon micromold. At this time, ZnO nanowires are formed on the top of the PDMS micropillar array by hydrothermal method.
  • the hierarchical zinc oxide nanowires are coated with a thin metal film to reduce electrical conductivity and resistance (S300).
  • a metal film is partially coated on the plurality of microfillers in which the nanowires are grown on any one PDMS substrate among the pair of PDMS substrates.
  • the electron micrograph in FIG. 1D shows that the ZnO nanowires were uniformly grown on the top of the PDMS microfiller array by the hydrothermal method.
  • the zinc oxide nanowires are grown through hydrothermal synthesis using zinc oxide nanocrystals uniformly coated on a PDMS micropillar array as a nucleus by a dip-coating method.
  • the PDMS substrate is suspended on the surface of the growth solution in a state in which the lower side of the microfiller is in contact with the solution so that the zinc oxide nanowires can be uniformly grown without any zinc oxide deposit.
  • zinc cations (Zn 2+ ) from zinc nitrate hydrate (Zn (NO 3 ) 2 xH 2 O) and oxygen anions from distilled water (DI) water follow the C axis of the ZnO nanowires. Alternately stacked
  • the thin metal film coated on top of the ZnO nanowire array is 10 times higher than the pure resistance of ZnO nanowires.
  • the electrical resistance can be reduced by more than -3 times to facilitate the current flow between ZnO nanowires.
  • the resistive method is primarily responsible for the stress (or stress) -induced change in contact area between interlocked hierarchical structures. Affected by
  • the dimensions of the zinc oxide nanowires and PDMS microfillers have a significant impact on the strain-induced contact area change and thus on the overall performance of the electronic skin.
  • the aspect ratio (AR) of ZnO nanowires (Fig. 2C, d) and the pitch of PDMS microfiller arrays (Fig. 3 and Table 1) are systematically investigated to investigate the detection performance of the electronic skin. , 30, 40um).
  • Figure 3a shows a hierarchical micro and nano structure interlock device configuration for highly sensitive resistive electronic skin.
  • the electron microscopy image in FIG. 3b clearly shows that the top and bottom of the ZnO nanowires are interlocked with each other on the PDMS microfiller array.
  • the pressure applied in this interlocked structure induces a change in contact surface between the interlocked nanowires and a change in contact resistance.
  • the hierarchical structure of ZnO nanowires on PDMS micropillar arrays provides a large surface area that can lead to large changes in contact resistance.
  • the hierarchical structure allows for minimal contact between nanowires at an early stage without any pressure, and allows for a continuous increase of the contact area under pressure, resulting in very sensitive resistance changes in the electronic skin. Cause.
  • microfiller arrays of different pitch sizes and planar nanowire arrays were introduced to compare resistance changes with pressure.
  • 3c shows that the relative resistance of the electronic skin decreases rapidly with increasing contact area at low pressure (below 2 kPa) and slowly decreases at high pressure (more than 2 kpa).
  • Resistance change is nonlinear depending on pressure change. That is, the pressure change may be due to the nonlinear relationship between the applied pressure and the contact area between the nanowires.
  • the gradual decrease in sensitivity as a function of nonlinear exponential law is advantageous for increasing the dynamic range of the pressure sensor to detect stimuli over a wide pressure range.
  • the index b is known to be proportional to the surface roughness and the surface area.
  • step S400 a step of configuring a pressure sensor of a piezoresistive type and a piezoelectric type is performed (S400).
  • the contact resistance is changed depending on the pressure, and thus the static pressure may be mainly detected.
  • the piezoelectric pressure sensor is a pressure sensor formed by engaging a hierarchical structure without any metal coating according to S300 among the pair of PDMS substrates being engaged.
  • the metal-coated ZnO nanowire hierarchy and the non-metal-coated ZnO nanowire contacts are in Schottky contact.
  • the piezoelectric pressure sensor may sense dynamic pressure by generating an instantaneous electrical potential difference in the piezoelectric material due to pressure.
  • the piezoelectric pressure sensor will be described with reference to FIG. 5.
  • FIG. 5D shows that the piezoelectric electronic skin can detect high frequency stimulation of 3 Hz or higher
  • FIG. 5E shows that the hierarchical nanowire array has a high signal-to-noise ratio at the output voltage. It can be seen that (2.1m / s) can be detected.
  • the piezoelectric current and the voltage signal are increased, so that the external pressure can be detected.
  • the high frequency of 250Hz was also detected according to the possible characteristics, and when compared with the piezoresisitive method that can recognize static pressure, it can be seen that it transmits the accurate signal even at the high frequency.
  • the piezoelectric method When referring to the formula related to the current, the current is related to the strain rate of the nanowire, which increases as the frequency increases, resulting in an increase in the strain rate. I can see that

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

L'invention concerne un procédé de fabrication de capteur de pression à base biomimétique qui comprend : (a) une étape de formation d'une pluralité de micropiliers sur chaque substrat d'une paire de substrats en PDMS à partir d'un motif de microtrou de silicium; (b) une étape de croissance de nanofil dans une pluralité de micropiliers formés sur les deux substrats en PDMS; (c) une étape de revêtement partiel de l'un quelconque des deux substrats en PDMS, dans laquelle le nanofil a crû dans les micropiliers, avec un film métallique; et (d) une étape de mise en prise des substrats en PDMS dans laquelle le nanofil a crû, entre les deux substrats en PDMS, avec le substrat en PDMS qui a été partiellement revêtu avec le film métallique à l'étape (c). Le procédé est efficace pour améliorer la performance sous la forme d'un capteur de pression par la maximisation de la zone de surface efficace et pour permettre une transmission efficace de la pression.
PCT/KR2015/014384 2015-03-23 2015-12-29 Procédé de fabrication de capteur de pression à base biomimétique et capteur de pression ainsi fabriqué WO2016153155A1 (fr)

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Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107389234A (zh) * 2017-07-19 2017-11-24 华中科技大学 一种基于纳米线作隔离层的压阻式传感器及其制备方法
CN108267248A (zh) * 2016-12-30 2018-07-10 香港科技大学深圳研究院 用于监测人体生理信号的柔性压力传感器及其制造方法
CN108318161A (zh) * 2018-02-06 2018-07-24 华东理工大学 可穿戴压力传感器及其制造方法
WO2018187782A1 (fr) * 2017-04-07 2018-10-11 The Board Of Trustees Of The University Of Illinois Compositions à base de polymère nanostructuré et leurs procédés de fabrication
CN108801512A (zh) * 2018-05-03 2018-11-13 五邑大学 一种纳米半球压力传感器及其制备方法
CN108981980A (zh) * 2018-05-03 2018-12-11 五邑大学 一种纳米级圆台微结构压力传感器及其制备方法
CN109406012A (zh) * 2018-11-09 2019-03-01 华南理工大学 一种柔性压电式的三维触觉传感器阵列及其制备方法
CN110361117A (zh) * 2019-06-12 2019-10-22 五邑大学 一种压阻式传感器的制造方法及其压阻式传感器
US10663361B2 (en) 2016-10-13 2020-05-26 The Trustees Of Columbia University In The City Of New York Systems and methods for tactile sensing
CN111251688A (zh) * 2020-03-23 2020-06-09 北京元芯碳基集成电路研究院 一种柔性导电薄膜及其制备方法、传感器
CN111811703A (zh) * 2020-07-21 2020-10-23 京东方科技集团股份有限公司 压力传感器和电子装置
CN113340481A (zh) * 2021-04-20 2021-09-03 中山大学 一种压力传感器及其制备方法
CN113540340A (zh) * 2021-07-08 2021-10-22 东南大学 一种基于介孔硅的柔性压电式纳米发电机的制备方法
CN114754906A (zh) * 2022-03-18 2022-07-15 复旦大学 一种受生物启发的超灵敏柔性压力传感器及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090037574A (ko) * 2007-10-12 2009-04-16 삼성전자주식회사 산화아연 나노구조체의 제조방법 및 그로부터 제조된산화아연 나노구조체
KR20120067249A (ko) * 2010-12-15 2012-06-25 전자부품연구원 금속 마스킹을 이용한 산화아연 나노와이어의 제조 방법 및 그 방법으로 제조된 산화아연 나노와이어 부재
KR20130066138A (ko) * 2011-12-12 2013-06-20 한국과학기술원 나노채널 구조체를 구비하는 센서 및 그 제조방법
KR101486217B1 (ko) * 2013-12-10 2015-02-06 한국기계연구원 커브 형 전도성 나노 또는 마이크로 필러를 이용한 촉각 센서

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090037574A (ko) * 2007-10-12 2009-04-16 삼성전자주식회사 산화아연 나노구조체의 제조방법 및 그로부터 제조된산화아연 나노구조체
KR20120067249A (ko) * 2010-12-15 2012-06-25 전자부품연구원 금속 마스킹을 이용한 산화아연 나노와이어의 제조 방법 및 그 방법으로 제조된 산화아연 나노와이어 부재
KR20130066138A (ko) * 2011-12-12 2013-06-20 한국과학기술원 나노채널 구조체를 구비하는 센서 및 그 제조방법
KR101486217B1 (ko) * 2013-12-10 2015-02-06 한국기계연구원 커브 형 전도성 나노 또는 마이크로 필러를 이용한 촉각 센서

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
QIN ET AL.: "Microfibre-nanowire Hybrid Structure for Energy Scavenging", NATURE, vol. 451, no. 7180, 14 February 2008 (2008-02-14), pages 809 - 813, XP055155477 *

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10663361B2 (en) 2016-10-13 2020-05-26 The Trustees Of Columbia University In The City Of New York Systems and methods for tactile sensing
CN108267248B (zh) * 2016-12-30 2020-12-01 香港科技大学深圳研究院 用于监测人体生理信号的柔性压力传感器及其制造方法
CN108267248A (zh) * 2016-12-30 2018-07-10 香港科技大学深圳研究院 用于监测人体生理信号的柔性压力传感器及其制造方法
WO2018187782A1 (fr) * 2017-04-07 2018-10-11 The Board Of Trustees Of The University Of Illinois Compositions à base de polymère nanostructuré et leurs procédés de fabrication
CN107389234B (zh) * 2017-07-19 2019-09-13 华中科技大学 一种基于纳米线作隔离层的压阻式传感器及其制备方法
CN107389234A (zh) * 2017-07-19 2017-11-24 华中科技大学 一种基于纳米线作隔离层的压阻式传感器及其制备方法
CN108318161A (zh) * 2018-02-06 2018-07-24 华东理工大学 可穿戴压力传感器及其制造方法
CN108318161B (zh) * 2018-02-06 2020-07-03 华东理工大学 可穿戴压力传感器及其制造方法
CN108801512A (zh) * 2018-05-03 2018-11-13 五邑大学 一种纳米半球压力传感器及其制备方法
CN108981980A (zh) * 2018-05-03 2018-12-11 五邑大学 一种纳米级圆台微结构压力传感器及其制备方法
CN109406012A (zh) * 2018-11-09 2019-03-01 华南理工大学 一种柔性压电式的三维触觉传感器阵列及其制备方法
CN110361117A (zh) * 2019-06-12 2019-10-22 五邑大学 一种压阻式传感器的制造方法及其压阻式传感器
CN111251688A (zh) * 2020-03-23 2020-06-09 北京元芯碳基集成电路研究院 一种柔性导电薄膜及其制备方法、传感器
CN111251688B (zh) * 2020-03-23 2022-01-25 北京元芯碳基集成电路研究院 一种柔性导电薄膜及其制备方法、传感器
CN111811703A (zh) * 2020-07-21 2020-10-23 京东方科技集团股份有限公司 压力传感器和电子装置
CN113340481A (zh) * 2021-04-20 2021-09-03 中山大学 一种压力传感器及其制备方法
CN113540340A (zh) * 2021-07-08 2021-10-22 东南大学 一种基于介孔硅的柔性压电式纳米发电机的制备方法
CN113540340B (zh) * 2021-07-08 2023-08-01 东南大学 一种基于介孔硅的柔性压电式纳米发电机的制备方法
CN114754906A (zh) * 2022-03-18 2022-07-15 复旦大学 一种受生物启发的超灵敏柔性压力传感器及其制备方法
CN114754906B (zh) * 2022-03-18 2023-09-22 复旦大学 一种受生物启发的超灵敏柔性压力传感器及其制备方法

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