WO2016142237A1 - Carrier for temporary bonded wafers - Google Patents

Carrier for temporary bonded wafers Download PDF

Info

Publication number
WO2016142237A1
WO2016142237A1 PCT/EP2016/054433 EP2016054433W WO2016142237A1 WO 2016142237 A1 WO2016142237 A1 WO 2016142237A1 EP 2016054433 W EP2016054433 W EP 2016054433W WO 2016142237 A1 WO2016142237 A1 WO 2016142237A1
Authority
WO
WIPO (PCT)
Prior art keywords
carrier
layer
porous
wafer
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2016/054433
Other languages
French (fr)
Inventor
Davy Goossens
Jérémie DE BAERDEMAEKER
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bekaert NV SA
Original Assignee
Bekaert NV SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bekaert NV SA filed Critical Bekaert NV SA
Priority to CN201680014264.XA priority Critical patent/CN107431034A/en
Priority to US15/557,202 priority patent/US10354905B2/en
Priority to KR1020177025074A priority patent/KR20170126899A/en
Priority to JP2017546228A priority patent/JP6663442B2/en
Publication of WO2016142237A1 publication Critical patent/WO2016142237A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/002—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of porous nature
    • B22F7/004—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of porous nature comprising at least one non-porous part
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/046—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of foam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/14—Layered products comprising a layer of metal next to a fibrous or filamentary layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04—Interconnection of layers
    • B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/14—Semiconductor wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer

Definitions

  • the invention relates to the field of carriers for wafers.
  • the carrier can be used for the temporary bonding of wafers during their processing, e.g. in wafer thinning.
  • US2009/197070A describes a support plate that bonds to a substrate so as to support the substrate.
  • a plurality of openings penetrate through from a bonding surface to a non-bonding surface.
  • the bonding surface faces the substrate, and the non-bonding surface faces the bonding surface.
  • a porous region which includes a first region and a second region surrounding the first region, is formed on the bonding surface; and the first region has an opening ratio greater than that of the second region.
  • US2005/0173064A1 provides a supporting plate that has a structure in which a solvent can be supplied to an adhesive layer between the supporting plate and a substrate - such as a semiconductor wafer - in a short period of time after the substrate is thinned.
  • the document also discloses a method for stripping the supporting plate.
  • the supporting plate may have a larger diameter than the semiconductor wafer, and penetrating holes are formed in the supporting plate.
  • the outer peripheral portion of the supporting plate is a flat portion in which no penetrating hole is formed.
  • US8882096B2 discloses a perforated support plate for supporting a
  • the perforated support plate has penetration holes. Solvent to dissolve the adhesive with which the perforated support plate is adhered to a wafer penetrates through the perforations of the support plate.
  • the perforated support plate comprises a reinforcing part for deflection prevention.
  • the carrier can be released by solvent passing through the thickness of the temporary carrier through its pores in order to dissolve the adhesive used to adhere the wafer to the temporary carrier.
  • US2009325467A describes a process wherein a wafer can be thinned without occurrence of dimples.
  • a support plate has a number of through holes.
  • a circuit forming surface of a wafer is adhered to one surface of the support plate by an adhesive member, and a dimple prevention member having a thickness of 100 ⁇ or more and having an adhesive layer on one face is adhered to the other surface.
  • the support plate is vacuum adsorbed to a support table through the dimple prevention member, and the wafer is ground/ polished to thin the wafer.
  • the dimple prevention member is stripped off, and a solvent is penetrated into the adhesive member through the through holes to detach the wafer from the support plate.
  • US2001005043A discloses a technique which performs the thinning of a wafer and the separation thereof from a support substrate with high yields and in a short time.
  • a hole-free support substrate is bonded to a second surface of a support substrate having holes with an adhesive layer melted by heating so as to block the holes.
  • a wafer is bonded to a first surface of the support substrate having the holes with an adhesive layer melted by solvent.
  • the wafer is thinned by grinding and etching.
  • the adhesive layer is melted by heating and the support substrate having the holes is slid with respect to the hole-free support substrate to thereby separate the support substrate having the holes from the hole-free support substrate.
  • the adhesive layer is then dissolved by solvent through the holes defined in the support substrate having the holes. Thereby the wafer is separated from the support substrate having the holes. As no load is put on the wafer, wafer damage is prevented.
  • the first aspect of the invention is a carrier onto which a wafer can be
  • the carrier comprises a plate shaped laminate.
  • the plate shaped laminate comprises a first layer.
  • the first layer comprises a metal foil or a metal sheet.
  • the plate shaped laminate comprises a second layer comprising a porous metal medium with three-dimensional open pores.
  • the porous metal medium comprises metal fibers.
  • the first layer is permanently bonded to the porous metal medium thereby closing the pores of the porous metal medium at the side where the first layer is located.
  • the first layer is permanently bonded to the porous metal medium such that during and after debonding a wafer temporarily bonded to the carrier, the first layer remains bonded to the porous metal medium.
  • the carrier has the shape of a disk, possibly wherein the disk deviates from a circular circumference by a linear side.
  • the linear side is present in order to match the shape of a wafer to be bonded to the work carrier.
  • the diameter of the circular section of the disk is suited for 6 inch, for 8 inch, or for 12 inch wafers. This means that the diameter of the disk is equal or slightly larger than the diameter of the wafer.
  • the carrier has the benefit that debonding solvent can flow through the three-dimensional open pores of the porous metal medium, from the side edges of the carrier adhesively bonded onto a wafer, through the whole volume of the porous metal medium.
  • the carrier has sufficient stiffness to transport the bonded wafer through the different process steps without the occurrence of bending or other mechanical deformation.
  • the carrier has the further benefit that it has sufficient mechanical properties, e.g. stiffness, in order to allow to reach the required dimensional properties of the thinned wafer, such as total thickness variation (TTV), bow and warp. It is a further benefit of the invention that the carrier can be re-used multiple times.
  • porous metal medium examples include sintered or welded metal fiber nonwovens. It is also possible to have in the second layer a multiple number of layers, wherein layers can be selected from layers comprising or consisting out of metal fibers, metal powder or metal foam; wherein at least one layer comprises metal fibers.
  • the first layer covers at least one planar side of the second layer; more preferably, the first layer covers the full surface of at least one planar side of the second layer.
  • the first layer covers the full surface of one planar side of the second layer.
  • the first layer is provided out of or comprises the same metal or alloy as the porous metal medium.
  • the porous metal medium comprises or is made out of
  • the first layer comprises or is made out of the same metal or metal alloy as the porous metal medium.
  • the first layer is permanently bonded to the porous metal medium by means of metallic bonds, preferably by means of diffusion bonding, such as sintering, or by means of welding (and preferably by means of welding wherein no additional filler material is used in the welding process).
  • metallic bonds preferably by means of diffusion bonding, such as sintering, or by means of welding (and preferably by means of welding wherein no additional filler material is used in the welding process).
  • welding capacity discharge welding
  • the first layer is permanently bonded to the porous metal medium by means of an adhesive.
  • the adhesive can be selected from the wide range of adhesives that are not attacked by the debonding liquid used when debonding the temporarily bonded wafer from the carrier. Examples of suitable adhesives are adhesives based on epoxy.
  • the carrier has a thickness between 650 ⁇ and 750 ⁇ .
  • the first layer has a thickness between 20 ⁇ and 650 ⁇ , more preferably between 150 ⁇ and 650 ⁇ .
  • the porous metal medium has a thickness between 50 ⁇ and
  • 150 ⁇ is preferably between 50 ⁇ and 150 ⁇ .
  • the porosity of the porous metal medium is between 30 and 80 %, more preferably between 50 and 80 %, even more preferably between 60 and 80 %.
  • Such embodiments synergistically add to improve the mechanical properties of the carrier, so that the wafer can fulfil the requirements of dimensional characteristics after its processing while being bonded onto the carrier.
  • the equivalent diameter of the metal fibers is between 2 and 50 ⁇ , more preferably between 2 and 40 ⁇ , even more preferably between 2 and 25 ⁇ . Even more preferably between 10 and 25 ⁇ .
  • equivalent diameter is meant the diameter of the circle having the same area as the cross section of a fiber, cross sectional shape which can deviate from a circular shape.
  • the porous metal medium has a surface for being bonded onto a wafer, wherein this surface is parallel with the first layer.
  • This surface is preferably polished so that the carrier has a total thickness variation (TTV) less than 10 ⁇ , more preferably less than 5 ⁇ ; and even more preferably less than 2 ⁇ .
  • the total thickness variation (TTV) is measured by a drop gauge measurement on 5 points, selected randomly over the surface of the material. For the test method, the diameter of the drop gauge is 5.99 mm.
  • the TTV is defined as the difference between the maximum thickness measured and the minimum thickness measured.
  • the surface of the second layer onto which the wafer will be temporarily bonded has a surface roughness Ra less than 1 ⁇ , more preferably less than 0.5 ⁇ .
  • Ra is the arithmetic mean of the deviations of the measured roughness points from their average.
  • the porous metal medium comprises or consists out of a first porous layer and a second porous layer.
  • the first porous layer is provided between the first layer and the second porous layer.
  • the porosity of the first porous layer is higher than the porosity of the second porous layer.
  • the second porous layer is provided for temporarily bonding a wafer onto it.
  • the first porous layer is directly bonded to the first layer.
  • the second porous layer is directly bonded to the first porous layer.
  • the second porous layer is provided for being bonded onto the wafer.
  • the first porous layer comprises metal fibers of a first equivalent diameter (e.g. 22 ⁇ ) and the second porous layer comprises metal fibers of a second equivalent diameter (e.g. 14 ⁇ ). In an even more preferred embodiment, the first equivalent diameter is larger than the second equivalent diameter.
  • the second layer comprises a contact layer for being bonded onto a wafer.
  • the contact layer can comprise a mixture of metal fibers and metal powder.
  • the metal fibers and the metal powder are permanently bonded to each other at their contacting points.
  • the porosity of the porous metal medium is more than 20% and preferably more than 30%, more preferably more than 40%, even more preferably more than 50%, even more preferably more than 55%. And preferably the porosity is less than 80%, more preferably less than 60%.
  • the porosity of the contact layer is more than 20% and preferably more than 30%. And preferably the porosity of the contact layer is less than 50%, more preferably less than 40%.
  • the porous metal medium comprises an additional porous layer, provided between the first layer and the contact layer.
  • the additional porous layer can comprise metal fibers, metal powder, or metal foam. Specific examples of the additional porous layer include sintered or welded metal fiber nonwovens, sintered metal powders, and metal foam.
  • the metal powder in the contact layer has a diameter within the range of 2 to 30 ⁇ , preferably within the range of 2 to 20 ⁇ , more preferably within the range of 2 to 10 m.
  • the side edges of the porous metal medium are permanently sealed so that no open pores are present at the side edges of the porous metal medium.
  • the sealing of the side edges is fully provided by metal.
  • the side edges can be sealed by means of welding of the edges, or by means of laser cutting to size and shape operation of the porous metal medium, or by means of a welding of the edges or by means of laser cutting operation to size and shape of the combination of the first layer and the second layer after bonding the first layer to the second layer.
  • An alternative method for creating the sealing edges is by machining a plate so that the upstanding edges are created, and the porous metal medium is inserted in the cup that is created by the machining, and subsequent bonding of the porous metal medium onto the first layer.
  • the carrier is provided such that when applying a pressure of 4 bar onto the carrier, the permanent deformation of the carrier is less than 5 % of its original thickness before applying the pressure. This can be tested by measuring the thickness of the carrier before and after applying a pressure of 4 bar during a time period of 20 seconds.
  • a carrier according to this embodiment can be made by prepressing the carrier or the porous metal layer or porous metal layers in it so that future permanent deformation is limited.
  • Such embodiments surprisingly synergistically improve the properties of the wafer after its processing (e.g. thinning) while being temporarily adhered to the carrier.
  • a second aspect of the invention is an assembly (or stack) of a wafer and a carrier as in the first aspect of the invention.
  • the wafer is bonded by means of an adhesive onto the second layer.
  • the adhesive is an adhesive that can be removed by means of contacting a suitable debonding liquid to the adhesive.
  • a third aspect of the invention is a method for the processing of wafers.
  • the method comprises the steps of
  • the first layer remains bonded to the porous metal medium.
  • the carrier is after debonding re-used one or more times for temporarily adhering another wafer onto it.
  • the carrier can be used at least 5 times, more preferably at least 10 times.
  • Figure 1 shows a top view of an exemplary carrier according to the
  • Figures 2 - 5 show cross sections of exemplary carriers according to the invention.
  • Figure 6 shows an example of an assembly of a wafer temporarily bonded to an inventive carrier.
  • Figure 1 shows the top view of a carrier 100 according to the invention.
  • the carrier 100 has the shape of a disk deviating from a circular circumference (with diameter D) by a linear side 102.
  • the linear side 102 is present in order to match the shape of a wafer to be bonded to the work carrier.
  • FIG. 2 shows a cross section of an exemplary carrier 200 according to the invention.
  • the carrier 200 comprises a first layer 210, wherein the first layer is a metal foil or a metal sheet.
  • the carrier 200 further comprises a nonwoven metal fiber web 220 (e.g. sintered or bonded by means of capacity discharge welding), comprising metal fibers 228.
  • the metal foil or metal sheet and the metal fibers are out of the same metal or alloy.
  • the nonwoven metal fiber web 220 is permanently bonded to the first layer 210, e.g. by means of an adhesive (e.g. an epoxy adhesive) or by means of sintering or by means of welding (e.g. capacity discharge welding).
  • an adhesive e.g. an epoxy adhesive
  • welding e.g. capacity discharge welding
  • FIG. 3 shows a cross section of an exemplary carrier 300 according to the invention.
  • the carrier 300 comprises a first layer 310, wherein the first layer is a metal foil or a metal sheet.
  • the carrier 300 further comprises a first porous layer, e.g. a sintered nonwoven metal fiber web 322; and a second porous layer, e.g. another sintered nonwoven metal fiber web 324.
  • the porosity of the first porous layer is higher than the porosity of the second porous layer.
  • the metal foil or metal sheet and the metal fibers of both sintered nonwoven metal fiber webs are out of the same metal or alloy.
  • the nonwoven metal fiber webs 322, 324 are permanently bonded to each other and to the first layer 310, e.g. by means of an adhesive (e.g. an epoxy adhesive); or by means of sintering or by means of welding (e.g. capacity discharge welding).
  • FIG. 4 shows a cross section of an exemplary carrier 400 according to the invention.
  • the carrier 400 comprises a first layer 410, wherein the first layer is a metal foil or a metal sheet.
  • the carrier 400 further comprises a porous metal medium 423, e.g. as discussed in the previous examples.
  • the side edges 450 of the porous metal medium are permanently sealed so that no open pores are present at the side edges 450 of the porous metal medium 423.
  • the side edges can be sealed by means of a welding or laser cutting operation on the edges of the porous metal medium 423, or by means of a welding or laser cutting operation on the combination of the first layer and the second layer after bonding the first layer to the second layer.
  • FIG. 5 shows a cross section of an exemplary carrier 500 according to the invention.
  • the carrier 500 comprises a first layer 510, wherein the first layer is a metal foil or a metal sheet.
  • the carrier 500 further comprises an additional porous layer 526, e.g. a sintered nonwoven metal fiber web.
  • the carrier comprises a contact layer 560 consisting out of a mixture of metal powder particles and metal fibers, sintered to each other at contacting points.
  • the metal foil or metal sheet, the metal fibers and the metal powder are out of the same metal or alloy.
  • the different layers are permanently bonded to each other by means of sintering or by means of welding (e.g. capacity discharge welding).
  • nonwoven metal fiber web instead of the nonwoven metal fiber web as additional layer, sintered porous powder layers and/or metal foam layers can be used.
  • Figure 6 shows an example of an assembly or stack 601 of a wafer
  • a temporary adhesive layer 670 is applied onto the porous metal medium of the carrier 200, and a wafer is 680 is temporarily bonded to the carrier 200 via this adhesive layer 670.
  • a carrier has been made.
  • the carrier comprises a 100 m thick titanium foil and a porous nonwoven titanium fiber medium of 600 ⁇ thickness.
  • the carrier has a total thickness of 700 ⁇ .
  • the nonwoven titanium fiber medium was sintered directly onto the titanium foil; and is a fiber sheet of 22 ⁇ diameter fibers with a density 1000 g/m 2 , meaning 56% porosity.
  • a carrier has been made.
  • the carrier comprises a 100 m thick titanium foil and a porous nonwoven titanium fiber medium of 600 ⁇ thickness.
  • the porous metal medium comprises a first porous layer and a second porous layer.
  • the first porous layer comprises titanium fibers of 22 ⁇ equivalent diameter and has 74 ⁇ thickness.
  • the second porous layer comprises titanium fibers of 14 ⁇ equivalent diameter and has 526 ⁇ thickness.
  • a carrier has been made having a first layer out of a 150 ⁇ thick titanium foil.
  • a nonwoven titanium fiber medium of 500 g/m 2 consisting out of titanium fibers of 22 ⁇ equivalent diameter and 14 mm fiber length was sintered onto the titanium foil, thereby establishing sinter bonds between contacting titanium fibers on the one hand; and between the titanium fibers and the titanium foil on the other hand, resulting in a total thickness 400 ⁇ of the structure.
  • the porosity of the porous layer was 56%.
  • the surface of the carrier to be bonded onto a wafer can be polished below a total thickness variation (TTV) of the carrier of 10 ⁇ .
  • TTV total thickness variation
  • a 150 mm by 150 mm square sized carrier has been temporarily glued using a standard available silicon based adhesive to a glass substrate of the same size.
  • the glass substrate simulates a wafer.
  • Immersing the solution in a debonding liquid (Daeclean 300 - a commercially available solvent system for removal of cured silicone - was used) showed proper debonding by wicking of the debonding liquid inside the titanium medium from the side edges of the carrier. The wicking could be followed by visual observation through the glass plate.
  • the debonding liquid fully wicked inside the porous metal medium in a short time period of 2 minutes 40 seconds, resulting in fully debonding the carrier from the glass plate.
  • a sintered metal powder layer or metal foam can be used as porous metal medium.
  • metal fiber nonwovens are preferred because, due to the elongated shape of the fibers, a different pore size is obtained which is believed to optimize wicking.
  • the carrier is provided such that when applying a pressure of 4 bar onto it, the permanent deformation of the carrier is less than 5 % of its original thickness before applying the pressure.
  • This can be tested by measuring the thickness of the carrier before and after applying a pressure of 4 bar during a time period of 20 seconds.
  • a carrier according to this embodiment can be made by prepressing the carrier or the porous metal layer or porous metal layers in it so that future permanent deformation is limited.
  • Such embodiments surprisingly synergistically improve the properties of the wafer after its processing (e.g. thinning) while being temporarily adhered to the carrier.

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Laminated Bodies (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

Carrier onto which a wafer can be temporarily bonded. The carrier comprises a plate shaped laminate. The plate shaped laminate comprises a first layer. The first layer comprises a metal foil or a metal sheet. The plate shaped laminate comprises a second layer comprising a porous metal medium with three- dimensional open pores. The porous metal medium comprises metal fibers. The first layer is permanently bonded to the porous metal medium thereby closing the pores of the porous metal medium at the side where the first layer is located.

Description

Carrier for temporary bonded wafers
Description
Technical Field
[0001 ] The invention relates to the field of carriers for wafers. The carrier can be used for the temporary bonding of wafers during their processing, e.g. in wafer thinning.
Background Art
[0002] The use of temporary bonding of wafers onto a carrier to allow processing of the wafer is well known. A challenge is the subsequent debonding of the wafer from the carrier. Different carriers have been described that allow debonding by means of a solvent. In such processes, the adhesive used for the temporary bonding is chemically dissolved.
[0003] US2009/197070A describes a support plate that bonds to a substrate so as to support the substrate. In the support plate, a plurality of openings penetrate through from a bonding surface to a non-bonding surface. The bonding surface faces the substrate, and the non-bonding surface faces the bonding surface. A porous region, which includes a first region and a second region surrounding the first region, is formed on the bonding surface; and the first region has an opening ratio greater than that of the second region. This way, it is possible to realize a support plate that can be easily peeled off from a semiconductor wafer with a solvent, but does not easily come off from a substrate during a processing operation on the semiconductor wafer.
[0004] US2005/0173064A1 provides a supporting plate that has a structure in which a solvent can be supplied to an adhesive layer between the supporting plate and a substrate - such as a semiconductor wafer - in a short period of time after the substrate is thinned. The document also discloses a method for stripping the supporting plate. The supporting plate may have a larger diameter than the semiconductor wafer, and penetrating holes are formed in the supporting plate. The outer peripheral portion of the supporting plate is a flat portion in which no penetrating hole is formed. When alcohol is poured from above the supporting plate, the alcohol reaches the adhesive layer through the penetrating holes, dissolves and removes the adhesive layer.
[0005] US8882096B2 discloses a perforated support plate for supporting a
surface of a wafer by interposing an adhesive layer. The perforated support plate has penetration holes. Solvent to dissolve the adhesive with which the perforated support plate is adhered to a wafer penetrates through the perforations of the support plate. The perforated support plate comprises a reinforcing part for deflection prevention.
[0006] US2004/0231793A1 discloses the use of a porous sintered metal as
temporary carrier for wafers. The carrier can be released by solvent passing through the thickness of the temporary carrier through its pores in order to dissolve the adhesive used to adhere the wafer to the temporary carrier.
[0007] US2009325467A describes a process wherein a wafer can be thinned without occurrence of dimples. A support plate has a number of through holes. A circuit forming surface of a wafer is adhered to one surface of the support plate by an adhesive member, and a dimple prevention member having a thickness of 100 μιτι or more and having an adhesive layer on one face is adhered to the other surface. Thus the openings at both ends of the through holes are blocked. The support plate is vacuum adsorbed to a support table through the dimple prevention member, and the wafer is ground/ polished to thin the wafer. The dimple prevention member is stripped off, and a solvent is penetrated into the adhesive member through the through holes to detach the wafer from the support plate.
[0008] US2001005043A discloses a technique which performs the thinning of a wafer and the separation thereof from a support substrate with high yields and in a short time. A hole-free support substrate is bonded to a second surface of a support substrate having holes with an adhesive layer melted by heating so as to block the holes. A wafer is bonded to a first surface of the support substrate having the holes with an adhesive layer melted by solvent. The wafer is thinned by grinding and etching. The adhesive layer is melted by heating and the support substrate having the holes is slid with respect to the hole-free support substrate to thereby separate the support substrate having the holes from the hole-free support substrate. The adhesive layer is then dissolved by solvent through the holes defined in the support substrate having the holes. Thereby the wafer is separated from the support substrate having the holes. As no load is put on the wafer, wafer damage is prevented.
Disclosure of Invention
[0009] It is an objective of the invention to provide a carrier for temporary wafer bonding. It is the objective to provide such a carrier with improved properties. It is an objective of the invention to provide a carrier that allows easy debonding of the wafer by dissolving the adhesive using a solvent percolating through the pores of the carrier. It is an objective of the invention to provide a carrier that allows that wafers can be thinned thereby obtaining the required quality specifications.
[0010] The first aspect of the invention is a carrier onto which a wafer can be
temporarily bonded, e.g. to allow wafer thinning. The carrier comprises a plate shaped laminate. The plate shaped laminate comprises a first layer. The first layer comprises a metal foil or a metal sheet. The plate shaped laminate comprises a second layer comprising a porous metal medium with three-dimensional open pores. The porous metal medium comprises metal fibers. The first layer is permanently bonded to the porous metal medium thereby closing the pores of the porous metal medium at the side where the first layer is located.
[001 1 ] The first layer is permanently bonded to the porous metal medium such that during and after debonding a wafer temporarily bonded to the carrier, the first layer remains bonded to the porous metal medium.
[0012] Preferably, the carrier has the shape of a disk, possibly wherein the disk deviates from a circular circumference by a linear side. The linear side is present in order to match the shape of a wafer to be bonded to the work carrier. Preferably the diameter of the circular section of the disk is suited for 6 inch, for 8 inch, or for 12 inch wafers. This means that the diameter of the disk is equal or slightly larger than the diameter of the wafer. [0013] The carrier has the benefit that debonding solvent can flow through the three-dimensional open pores of the porous metal medium, from the side edges of the carrier adhesively bonded onto a wafer, through the whole volume of the porous metal medium. This way, debonding solvent can reach the adhesive layer attaching the wafer to the carrier fast. The carrier has sufficient stiffness to transport the bonded wafer through the different process steps without the occurrence of bending or other mechanical deformation. The carrier has the further benefit that it has sufficient mechanical properties, e.g. stiffness, in order to allow to reach the required dimensional properties of the thinned wafer, such as total thickness variation (TTV), bow and warp. It is a further benefit of the invention that the carrier can be re-used multiple times.
[0014] Specific examples of the porous metal medium include sintered or welded metal fiber nonwovens. It is also possible to have in the second layer a multiple number of layers, wherein layers can be selected from layers comprising or consisting out of metal fibers, metal powder or metal foam; wherein at least one layer comprises metal fibers.
[0015] Preferably, the first layer covers at least one planar side of the second layer; more preferably, the first layer covers the full surface of at least one planar side of the second layer.
[0016] In a preferred embodiment, the first layer covers the full surface of one planar side of the second layer.
[0017] Preferably, the first layer is provided out of or comprises the same metal or alloy as the porous metal medium.
[0018] Preferably, the porous metal medium comprises or is made out of
stainless steel, titanium, palladium or tungsten; or out of an alloy
comprising for more than 50% by weight of titanium, palladium or tungsten. More preferably, the first layer comprises or is made out of the same metal or metal alloy as the porous metal medium.
[0019] In a preferred embodiment, the first layer is permanently bonded to the porous metal medium by means of metallic bonds, preferably by means of diffusion bonding, such as sintering, or by means of welding (and preferably by means of welding wherein no additional filler material is used in the welding process). An example of a welding process that can be used is capacity discharge welding (CDW).
[0020] In a preferred embodiment, the first layer is permanently bonded to the porous metal medium by means of an adhesive. The adhesive can be selected from the wide range of adhesives that are not attacked by the debonding liquid used when debonding the temporarily bonded wafer from the carrier. Examples of suitable adhesives are adhesives based on epoxy.
[0021 ] Preferably, the carrier has a thickness between 650 μιτι and 750 μιτι.
[0022] Preferably, the first layer has a thickness between 20 μιτι and 650 μιτι, more preferably between 150 μιτι and 650 μιτι.
[0023] Preferably, the porous metal medium has a thickness between 50 μιτι and
150 μιτι, more preferably between 50 μιτι and 150 μιτι.
[0024] Preferably, the porosity of the porous metal medium is between 30 and 80 %, more preferably between 50 and 80 %, even more preferably between 60 and 80 %.
Such embodiments synergistically add to improve the mechanical properties of the carrier, so that the wafer can fulfil the requirements of dimensional characteristics after its processing while being bonded onto the carrier.
[0025] Preferably, the equivalent diameter of the metal fibers is between 2 and 50 μιτι, more preferably between 2 and 40 μιτι, even more preferably between 2 and 25 μιτι. Even more preferably between 10 and 25 μιτι. With equivalent diameter is meant the diameter of the circle having the same area as the cross section of a fiber, cross sectional shape which can deviate from a circular shape.
[0026] Preferably, the porous metal medium has a surface for being bonded onto a wafer, wherein this surface is parallel with the first layer. This surface is preferably polished so that the carrier has a total thickness variation (TTV) less than 10 μιτι, more preferably less than 5 μιτι; and even more preferably less than 2 μιτι. The total thickness variation (TTV) is measured by a drop gauge measurement on 5 points, selected randomly over the surface of the material. For the test method, the diameter of the drop gauge is 5.99 mm. The TTV is defined as the difference between the maximum thickness measured and the minimum thickness measured.
[0027] Preferably, the surface of the second layer onto which the wafer will be temporarily bonded, has a surface roughness Ra less than 1 μιτι, more preferably less than 0.5 μιτι. As is known to the skilled person, Ra is the arithmetic mean of the deviations of the measured roughness points from their average.
[0028] Preferably, the porous metal medium comprises or consists out of a first porous layer and a second porous layer. The first porous layer is provided between the first layer and the second porous layer. The porosity of the first porous layer is higher than the porosity of the second porous layer. Preferably, the second porous layer is provided for temporarily bonding a wafer onto it.
In a more preferred embodiment, the first porous layer is directly bonded to the first layer. In a further preferred embodiment, the second porous layer is directly bonded to the first porous layer. In a further embodiment, the second porous layer is provided for being bonded onto the wafer. In a more preferred embodiment, the first porous layer comprises metal fibers of a first equivalent diameter (e.g. 22 μιτι) and the second porous layer comprises metal fibers of a second equivalent diameter (e.g. 14 μιτι). In an even more preferred embodiment, the first equivalent diameter is larger than the second equivalent diameter.
[0029] Preferably, the second layer comprises a contact layer for being bonded onto a wafer. The contact layer can comprise a mixture of metal fibers and metal powder. The metal fibers and the metal powder are permanently bonded to each other at their contacting points. In a preferred such embodiment, the porosity of the porous metal medium is more than 20% and preferably more than 30%, more preferably more than 40%, even more preferably more than 50%, even more preferably more than 55%. And preferably the porosity is less than 80%, more preferably less than 60%.
In a preferred such embodiment, the porosity of the contact layer is more than 20% and preferably more than 30%. And preferably the porosity of the contact layer is less than 50%, more preferably less than 40%.
In a preferred embodiment, the porous metal medium comprises an additional porous layer, provided between the first layer and the contact layer. The additional porous layer can comprise metal fibers, metal powder, or metal foam. Specific examples of the additional porous layer include sintered or welded metal fiber nonwovens, sintered metal powders, and metal foam.
Preferably, the metal powder in the contact layer has a diameter within the range of 2 to 30 μιτι, preferably within the range of 2 to 20 μιτι, more preferably within the range of 2 to 10 m. In a preferred embodiment, the side edges of the porous metal medium are permanently sealed so that no open pores are present at the side edges of the porous metal medium. Preferably, the sealing of the side edges is fully provided by metal.
The side edges can be sealed by means of welding of the edges, or by means of laser cutting to size and shape operation of the porous metal medium, or by means of a welding of the edges or by means of laser cutting operation to size and shape of the combination of the first layer and the second layer after bonding the first layer to the second layer.
An alternative method for creating the sealing edges is by machining a plate so that the upstanding edges are created, and the porous metal medium is inserted in the cup that is created by the machining, and subsequent bonding of the porous metal medium onto the first layer.
When a temporary bonded wafer is to be debonded from a carrier with permanently sealed edges, initially no wicking of the debonding liquid occurs in the porous metal medium. Initial debonding happens on the thin layer of adhesive between the carrier and the wafer. When this thin adhesive layer is broken down, the debonding speed increases by having increased wicking of the debonding liquid in the porous metal medium, through the openings created by dissolving the glue layer at the edge. [0031 ] In a preferred embodiment, the carrier is provided such that when applying a pressure of 4 bar onto the carrier, the permanent deformation of the carrier is less than 5 % of its original thickness before applying the pressure. This can be tested by measuring the thickness of the carrier before and after applying a pressure of 4 bar during a time period of 20 seconds. A carrier according to this embodiment can be made by prepressing the carrier or the porous metal layer or porous metal layers in it so that future permanent deformation is limited. Such embodiments surprisingly synergistically improve the properties of the wafer after its processing (e.g. thinning) while being temporarily adhered to the carrier.
[0032] A second aspect of the invention is an assembly (or stack) of a wafer and a carrier as in the first aspect of the invention. The wafer is bonded by means of an adhesive onto the second layer. Preferably, the adhesive is an adhesive that can be removed by means of contacting a suitable debonding liquid to the adhesive.
[0033] A third aspect of the invention is a method for the processing of wafers.
The method comprises the steps of
- temporarily adhering a wafer to a carrier as in the first aspect of the invention by means of an adhesive,
- processing the wafer temporarily adhered to the carrier, e.g. thinning the wafer;
- debonding the wafer from the carrier, by means of a debonding liquid breaking up the temporary adhesive bond between the wafer and the carrier; wherein the debonding liquid penetrates into the porous metal medium from the side edges of the assembly of the wafer bonded by means of adhesive to the carrier.
During and after debonding a wafer temporarily bonded to the carrier, the first layer remains bonded to the porous metal medium.
In a preferred method, the carrier is after debonding re-used one or more times for temporarily adhering another wafer onto it. Preferably, the carrier can be used at least 5 times, more preferably at least 10 times. Brief Description of Figures in the Drawings
[0034] Figure 1 shows a top view of an exemplary carrier according to the
invention.
Figures 2 - 5 show cross sections of exemplary carriers according to the invention.
Figure 6 shows an example of an assembly of a wafer temporarily bonded to an inventive carrier.
Mode(s) for Carrying Out the Invention
[0035] Figure 1 shows the top view of a carrier 100 according to the invention.
The carrier 100 has the shape of a disk deviating from a circular circumference (with diameter D) by a linear side 102. The linear side 102 is present in order to match the shape of a wafer to be bonded to the work carrier.
[0036] Figure 2 shows a cross section of an exemplary carrier 200 according to the invention. The carrier 200 comprises a first layer 210, wherein the first layer is a metal foil or a metal sheet. The carrier 200 further comprises a nonwoven metal fiber web 220 (e.g. sintered or bonded by means of capacity discharge welding), comprising metal fibers 228. Preferably, the metal foil or metal sheet and the metal fibers are out of the same metal or alloy. The nonwoven metal fiber web 220 is permanently bonded to the first layer 210, e.g. by means of an adhesive (e.g. an epoxy adhesive) or by means of sintering or by means of welding (e.g. capacity discharge welding).
[0037] Figure 3 shows a cross section of an exemplary carrier 300 according to the invention. The carrier 300 comprises a first layer 310, wherein the first layer is a metal foil or a metal sheet. The carrier 300 further comprises a first porous layer, e.g. a sintered nonwoven metal fiber web 322; and a second porous layer, e.g. another sintered nonwoven metal fiber web 324. The porosity of the first porous layer is higher than the porosity of the second porous layer. Preferably, the metal foil or metal sheet and the metal fibers of both sintered nonwoven metal fiber webs are out of the same metal or alloy. The nonwoven metal fiber webs 322, 324 are permanently bonded to each other and to the first layer 310, e.g. by means of an adhesive (e.g. an epoxy adhesive); or by means of sintering or by means of welding (e.g. capacity discharge welding).
Instead of one or both of the nonwoven metal fiber webs, sintered porous powder layers and/or metal foam layers can be used for the first porous layer and/or for the second porous layer. Figure 4 shows a cross section of an exemplary carrier 400 according to the invention. The carrier 400 comprises a first layer 410, wherein the first layer is a metal foil or a metal sheet. The carrier 400 further comprises a porous metal medium 423, e.g. as discussed in the previous examples. The side edges 450 of the porous metal medium are permanently sealed so that no open pores are present at the side edges 450 of the porous metal medium 423. The side edges can be sealed by means of a welding or laser cutting operation on the edges of the porous metal medium 423, or by means of a welding or laser cutting operation on the combination of the first layer and the second layer after bonding the first layer to the second layer.
An alternative method for creating the sealing edges is by machining a plate so that the upstanding edges are created. The porous metal medium is then inserted in the cup that is created by the machining. Subsequently, bonding of the porous metal medium onto the first layer is performed. When a temporary bonded wafer is to be debonded from this carrier, initially no wicking of the debonding liquid occurs in the porous metal medium and initial debonding happens on the thin layer of adhesive between the carrier and the wafer. When this thin adhesive layer is broken down, the debonding speed increases by having an increased wicking of the debonding liquid in the porous metal medium through the openings created by dissolving the glue layer at the edge. [0039] Figure 5 shows a cross section of an exemplary carrier 500 according to the invention. The carrier 500 comprises a first layer 510, wherein the first layer is a metal foil or a metal sheet. The carrier 500 further comprises an additional porous layer 526, e.g. a sintered nonwoven metal fiber web. The carrier comprises a contact layer 560 consisting out of a mixture of metal powder particles and metal fibers, sintered to each other at contacting points.
Preferably, the metal foil or metal sheet, the metal fibers and the metal powder are out of the same metal or alloy.
The different layers are permanently bonded to each other by means of sintering or by means of welding (e.g. capacity discharge welding).
Instead of the nonwoven metal fiber web as additional layer, sintered porous powder layers and/or metal foam layers can be used.
[0040] Figure 6 shows an example of an assembly or stack 601 of a wafer
temporarily bonded to a carrier, e.g. the carrier 200 of the example of figure 2. Same reference numbers as in figure 2 have the same meaning as described for figure 2. A temporary adhesive layer 670 is applied onto the porous metal medium of the carrier 200, and a wafer is 680 is temporarily bonded to the carrier 200 via this adhesive layer 670.
[0041 ] As an example of the invention, a carrier has been made. The carrier comprises a 100 m thick titanium foil and a porous nonwoven titanium fiber medium of 600 μιτι thickness. The carrier has a total thickness of 700 μιτι. The nonwoven titanium fiber medium was sintered directly onto the titanium foil; and is a fiber sheet of 22 μιτι diameter fibers with a density 1000 g/m2, meaning 56% porosity.
[0042] As an example of the invention, a carrier has been made. The carrier comprises a 100 m thick titanium foil and a porous nonwoven titanium fiber medium of 600 μιτι thickness. The porous metal medium comprises a first porous layer and a second porous layer. The first porous layer comprises titanium fibers of 22 μιτι equivalent diameter and has 74 μιτι thickness. The second porous layer comprises titanium fibers of 14 μιτι equivalent diameter and has 526 μιτι thickness.
[0043] As an example of the invention, a carrier has been made having a first layer out of a 150 μιτι thick titanium foil. A nonwoven titanium fiber medium of 500 g/m2 consisting out of titanium fibers of 22 μιτι equivalent diameter and 14 mm fiber length was sintered onto the titanium foil, thereby establishing sinter bonds between contacting titanium fibers on the one hand; and between the titanium fibers and the titanium foil on the other hand, resulting in a total thickness 400 μιτι of the structure. The porosity of the porous layer was 56%. The surface of the carrier to be bonded onto a wafer can be polished below a total thickness variation (TTV) of the carrier of 10 μιτι.
A 150 mm by 150 mm square sized carrier has been temporarily glued using a standard available silicon based adhesive to a glass substrate of the same size. The glass substrate simulates a wafer. Immersing the solution in a debonding liquid (Daeclean 300 - a commercially available solvent system for removal of cured silicone - was used) showed proper debonding by wicking of the debonding liquid inside the titanium medium from the side edges of the carrier. The wicking could be followed by visual observation through the glass plate. The debonding liquid fully wicked inside the porous metal medium in a short time period of 2 minutes 40 seconds, resulting in fully debonding the carrier from the glass plate. It will be clear to the skilled person that in the same way as a metal fiber nonwoven web, a sintered metal powder layer or metal foam can be used as porous metal medium. However, metal fiber nonwovens are preferred because, due to the elongated shape of the fibers, a different pore size is obtained which is believed to optimize wicking.
Preferably, the carrier is provided such that when applying a pressure of 4 bar onto it, the permanent deformation of the carrier is less than 5 % of its original thickness before applying the pressure. This can be tested by measuring the thickness of the carrier before and after applying a pressure of 4 bar during a time period of 20 seconds. A carrier according to this embodiment can be made by prepressing the carrier or the porous metal layer or porous metal layers in it so that future permanent deformation is limited. Such embodiments surprisingly synergistically improve the properties of the wafer after its processing (e.g. thinning) while being temporarily adhered to the carrier.

Claims

Claims
1 . Carrier onto which a wafer can be temporarily bonded,
wherein the carrier comprises a plate shaped laminate,
the plate shaped laminate comprises:
- a first layer, wherein the first layer comprises a metal foil or a metal sheet; and
- a second layer comprising a porous metal medium with three-dimensional open pores; wherein the porous metal medium comprises metal fibers;
wherein the first layer is permanently bonded to the porous metal medium thereby closing the pores of the porous metal medium at the side where the first layer is located.
2. Carrier as in claim 1 , wherein the first layer comprises the same metal or alloy as the porous metal medium.
3. Carrier as in any of the preceding claims, wherein said porous metal medium comprises stainless steel, titanium, palladium or tungsten; or comprises alloy comprising for more than 50% by weight of titanium, palladium or tungsten.
4. Carrier as in any of the claims 1 - 3, wherein the first layer is permanently bonded to the porous metal medium by means of metallic bonds.
5. Carrier as in any of the claims 1 - 3, wherein the first layer is permanently bonded to the porous metal medium by means of an adhesive.
6. Carrier as in any of the preceding claims, wherein the porosity of the porous metal medium is between 30 and 80 %.
7. Carrier as in any of the preceding claims, wherein the equivalent diameter of the metal fibers is between 2 and 50 μιτι.
8. Carrier as in any of the preceding claims, wherein the porous metal medium has a surface for being bonded onto a wafer, wherein this surface is parallel with the first layer; and wherein this surface is polished so that the carrier has a total thickness variation (TTV) less than 10 μηη.
9. Carrier as in any of the preceding claims,
wherein the porous metal medium comprises a first porous layer and a second porous layer,
wherein the first porous layer is provided between the first layer and the second porous layer;
and wherein the porosity of the first porous layer is higher than the porosity of the second porous layer.
10. Carrier as in any of the preceding claims, wherein the second layer comprises a contact layer for being bonded onto a wafer,
wherein the contact layer comprises a mixture of metal fibers and metal powder,
wherein the metal fibers and the metal powder are permanently bonded to each other at their contacting points.
1 1 . Carrier as in any of the preceding claims, wherein the side edges of the porous metal medium are permanently sealed so that no open pores are present at the side edges of the porous metal medium.
12. Assembly of a wafer and a carrier as in any of the preceding claims,
wherein the wafer is bonded onto said second layer by means of an adhesive.
13. Method for the processing of wafers, comprising the steps of
- temporarily adhering a wafer to a carrier as in any of the claims 1 - 1 1 by means of an adhesive,
- processing the wafer temporarily adhered to the carrier;
- debonding the wafer from the carrier, by means of a debonding liquid breaking up the temporary adhesive bond between the wafer and the carrier; wherein the debonding liquid penetrates into the porous metal medium from the side edges of the assembly of the wafer bonded by means of adhesive to the carrier.
PCT/EP2016/054433 2015-03-11 2016-03-02 Carrier for temporary bonded wafers Ceased WO2016142237A1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN201680014264.XA CN107431034A (en) 2015-03-11 2016-03-02 Carrier for interim bonding wafer
US15/557,202 US10354905B2 (en) 2015-03-11 2016-03-02 Carrier for temporary bonded wafers
KR1020177025074A KR20170126899A (en) 2015-03-11 2016-03-02 Temporarily bonded wafer carrier
JP2017546228A JP6663442B2 (en) 2015-03-11 2016-03-02 Temporarily bonded wafer carrier

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP15158634.4 2015-03-11
EP15158634 2015-03-11

Publications (1)

Publication Number Publication Date
WO2016142237A1 true WO2016142237A1 (en) 2016-09-15

Family

ID=52684037

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2016/054433 Ceased WO2016142237A1 (en) 2015-03-11 2016-03-02 Carrier for temporary bonded wafers

Country Status (6)

Country Link
US (1) US10354905B2 (en)
JP (1) JP6663442B2 (en)
KR (1) KR20170126899A (en)
CN (1) CN107431034A (en)
TW (1) TWI691015B (en)
WO (1) WO2016142237A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3971647A1 (en) * 2020-09-16 2022-03-23 ASML Netherlands B.V. Base plate and substrate assembly
WO2022058094A1 (en) * 2020-09-16 2022-03-24 Asml Netherlands B.V. Base plate and substrate assembly

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6663442B2 (en) * 2015-03-11 2020-03-11 エンベー ベカルト ソシエテ アノニムＮＶ Ｂｅｋａｅｒｔ ＳＡ Temporarily bonded wafer carrier
JP7208011B2 (en) * 2016-11-28 2023-01-18 三井金属鉱業株式会社 Multilayer wiring board manufacturing method
JP7034547B2 (en) * 2018-02-02 2022-03-14 株式会社ディスコ An annular grindstone and a method for manufacturing an annular grindstone
KR102477355B1 (en) 2018-10-23 2022-12-15 삼성전자주식회사 Carrier substrate and substrate processing apparatus using the same
CN112201573B (en) * 2020-09-29 2024-04-12 武汉新芯集成电路制造有限公司 Multi-layer wafer bonding method

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010005043A1 (en) 1999-12-24 2001-06-28 Masaki Nakanishi Semiconductor device and a method of manufacturing the same
WO2002029856A2 (en) * 2000-09-29 2002-04-11 Motorola, Inc. A testing device for semiconductor components and a method of using the same
FR2835242A1 (en) * 2002-01-28 2003-08-01 Karl Suss France SUPPORT DEVICE WITH HOLDING PLATES
US20040188020A1 (en) * 2001-06-14 2004-09-30 Mitsuhiro Yuasa Wafer supporter
US20040231793A1 (en) 2002-12-20 2004-11-25 Werner Kroninger Method of processing a workpiece, and a work carrier, in particular of porous ceramic
US20050173064A1 (en) 2003-12-01 2005-08-11 Tokyo Ohka Kogyo Co., Ltd. Substrate supporting plate and stripping method for supporting plate
US20070110975A1 (en) * 2003-12-09 2007-05-17 Schunk Kohlensteofftechnik Gmbh Carrier for receiving an object and method for the production of a carrier
US20090197070A1 (en) 2008-02-04 2009-08-06 Tokyo Ohka Kogyo Co., Ltd. Support plate
US20090325467A1 (en) 2006-07-14 2009-12-31 Tokyo Ohka Kogyo Co., Ltd. Method of Thinning Wafer and Support plate
US8882096B2 (en) 2006-12-28 2014-11-11 Tokyo Ohka Kogyo Co., Ltd. Perforated support plate

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4902420A (en) * 1987-03-27 1990-02-20 Pall Corporation Segmented filter disc with slotted support and drainage plate and support spacer
US5267607A (en) * 1991-05-28 1993-12-07 Tokyo Electron Limited Substrate processing apparatus
JPH0985616A (en) * 1995-09-22 1997-03-31 Sony Corp Polishing device for thin substrate
US5858537A (en) * 1996-05-31 1999-01-12 The United States Of America As Represented By The Secretary Of The Navy Compliant attachment
US6439984B1 (en) * 1998-09-16 2002-08-27 Entegris, Inc. Molded non-abrasive substrate carrier for use in polishing operations
DE19956250C1 (en) * 1999-11-23 2001-05-17 Wacker Siltronic Halbleitermat Production of a number of semiconductor wafers comprise simultaneously polishing a front side and a rear side of each wafer and evaluating each wafer for further processing according to quality criteria
US7066800B2 (en) * 2000-02-17 2006-06-27 Applied Materials Inc. Conductive polishing article for electrochemical mechanical polishing
US7137879B2 (en) * 2001-04-24 2006-11-21 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
KR20040098559A (en) * 2003-05-15 2004-11-20 실트로닉 아게 Process for polishing a semiconductor wafer
US7008308B2 (en) * 2003-05-20 2006-03-07 Memc Electronic Materials, Inc. Wafer carrier
JP2005093938A (en) * 2003-09-19 2005-04-07 Shin Etsu Polymer Co Ltd Substrate holder
JP4727218B2 (en) * 2004-12-10 2011-07-20 株式会社住友金属ファインテック Double-side polishing carrier
DE102005010841A1 (en) * 2005-03-07 2006-09-14 ASTRA Gesellschaft für Asset Management mbH & Co. KG Textile information carrier and method for producing a textile information carrier
DE102005034119B3 (en) * 2005-07-21 2006-12-07 Siltronic Ag Semiconductor wafer processing e.g. lapping, method for assembly of electronic components, involves processing wafer until it is thinner than rotor plate and thicker than layer, with which recess of plate is lined for wafer protection
JP2007188967A (en) * 2006-01-11 2007-07-26 Sony Corp Substrate support, substrate processing method, and semiconductor device manufacturing method
US20080146121A1 (en) * 2006-12-19 2008-06-19 Applied Materials, Inc. Platen assembly for electrochemical mechanical processing
JP2009136136A (en) * 2007-09-26 2009-06-18 Asml Netherlands Bv Lithographic apparatus having a Lorentz actuator with a composite carrier
CN201112364Y (en) * 2007-10-18 2008-09-10 郑州华硕精密陶瓷有限公司 Bearing disc
US7833884B2 (en) * 2007-11-02 2010-11-16 International Business Machines Corporation Strained semiconductor-on-insulator by Si:C combined with porous process
JP2009191230A (en) * 2008-02-18 2009-08-27 Mitsui Chemicals Inc Tape and method of manufacturing semiconductor device using the tape
DE102009038942B4 (en) * 2008-10-22 2022-06-23 Peter Wolters Gmbh Device for machining flat workpieces on both sides and method for machining a plurality of semiconductor wafers simultaneously by removing material from both sides
WO2010058812A1 (en) * 2008-11-21 2010-05-27 国立大学法人長岡技術科学大学 Substrate processing apparatus
US8764026B2 (en) * 2009-04-16 2014-07-01 Suss Microtec Lithography, Gmbh Device for centering wafers
US8801497B2 (en) * 2009-04-30 2014-08-12 Rdc Holdings, Llc Array of abrasive members with resilient support
DE102009030292B4 (en) * 2009-06-24 2011-12-01 Siltronic Ag Method for polishing both sides of a semiconductor wafer
US20110141448A1 (en) * 2009-11-27 2011-06-16 Nikon Corporation Substrate carrier device, substrate carrying method, substrate supporting member, substrate holding device, exposure apparatus, exposure method and device manufacturing method
DE102010013520B4 (en) * 2010-03-31 2013-02-07 Siltronic Ag Process for double-sided polishing of a semiconductor wafer
US8816253B2 (en) * 2011-01-21 2014-08-26 Tp Solar, Inc. Dual independent transport systems for IR conveyor furnaces and methods of firing thin work pieces
WO2013151704A1 (en) * 2012-04-02 2013-10-10 The Board Of Trustees Of The Leland Stanford Junior University Water sterilization devices and uses thereof
CN104662652B (en) * 2012-06-12 2016-12-28 埃里希·塔尔纳 Substrate-product substrate-combination and apparatus and method for manufacturing substrate-product substrate-combination
US9349804B2 (en) * 2013-02-12 2016-05-24 Infineon Technologies Ag Composite wafer for bonding and encapsulating an SiC-based functional layer
WO2015002324A1 (en) * 2013-07-05 2015-01-08 Nitto Denko Corporation Filter element for decomposing contaminants, system for decomposing contaminants and method using the system
JP6286215B2 (en) * 2014-01-28 2018-02-28 株式会社日立ハイテクノロジーズ Plasma processing equipment
JP6663442B2 (en) * 2015-03-11 2020-03-11 エンベー ベカルト ソシエテ アノニムＮＶ Ｂｅｋａｅｒｔ ＳＡ Temporarily bonded wafer carrier
DE102015106811B4 (en) * 2015-04-30 2022-02-03 VON ARDENNE Asset GmbH & Co. KG Use of a foil structure in an energy store and energy store
JP6615134B2 (en) * 2017-01-30 2019-12-04 日本碍子株式会社 Wafer support

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010005043A1 (en) 1999-12-24 2001-06-28 Masaki Nakanishi Semiconductor device and a method of manufacturing the same
WO2002029856A2 (en) * 2000-09-29 2002-04-11 Motorola, Inc. A testing device for semiconductor components and a method of using the same
US20040188020A1 (en) * 2001-06-14 2004-09-30 Mitsuhiro Yuasa Wafer supporter
FR2835242A1 (en) * 2002-01-28 2003-08-01 Karl Suss France SUPPORT DEVICE WITH HOLDING PLATES
US20040231793A1 (en) 2002-12-20 2004-11-25 Werner Kroninger Method of processing a workpiece, and a work carrier, in particular of porous ceramic
US20050173064A1 (en) 2003-12-01 2005-08-11 Tokyo Ohka Kogyo Co., Ltd. Substrate supporting plate and stripping method for supporting plate
US20070110975A1 (en) * 2003-12-09 2007-05-17 Schunk Kohlensteofftechnik Gmbh Carrier for receiving an object and method for the production of a carrier
US20090325467A1 (en) 2006-07-14 2009-12-31 Tokyo Ohka Kogyo Co., Ltd. Method of Thinning Wafer and Support plate
US8882096B2 (en) 2006-12-28 2014-11-11 Tokyo Ohka Kogyo Co., Ltd. Perforated support plate
US20090197070A1 (en) 2008-02-04 2009-08-06 Tokyo Ohka Kogyo Co., Ltd. Support plate

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3971647A1 (en) * 2020-09-16 2022-03-23 ASML Netherlands B.V. Base plate and substrate assembly
WO2022058094A1 (en) * 2020-09-16 2022-03-24 Asml Netherlands B.V. Base plate and substrate assembly
US12610781B2 (en) 2020-09-16 2026-04-21 Asml Netherlands B.V. Base plate and substrate assembly

Also Published As

Publication number Publication date
TWI691015B (en) 2020-04-11
US10354905B2 (en) 2019-07-16
TW201701394A (en) 2017-01-01
JP6663442B2 (en) 2020-03-11
US20180040500A1 (en) 2018-02-08
CN107431034A (en) 2017-12-01
JP2018511172A (en) 2018-04-19
KR20170126899A (en) 2017-11-20

Similar Documents

Publication Publication Date Title
US10354905B2 (en) Carrier for temporary bonded wafers
KR101476516B1 (en) Device and method for detaching a product substrate from a carrier substrate
EP3159919A1 (en) A procedure of processing a workpiece and an apparatus designed for the procedure
TW202510118A (en) Method and device for bonding chips
JP2004202684A (en) Processed product processing method and processed product carrier
JP2008270345A (en) Manufacturing method of chip with adhesive
WO2016142239A1 (en) Carrier for temporary bonded wafers
JP2013034027A (en) Laminated sheet for semiconductor device manufacturing
KR100759687B1 (en) Method for thinning substrate and method for manufacturing circuit device
CN107814354B (en) Method and system for strain gauge manufacturing
KR101404463B1 (en) Wafer support system and method for bonding and debonding wafer using the same
WO2016142238A1 (en) Carrier for temporary bonded wafers
CN106711091A (en) A MEMS wafer cutting method and MEMS chip manufacturing method
CN103441093B (en) For the slide structure and preparation method thereof of interim bonding
CN103299416A (en) Method for separating a product substrate from a carrier substrate
WO2016142240A1 (en) Carrier for temporary bonded wafers
JP2005045023A (en) Semiconductor device manufacturing method and semiconductor manufacturing apparatus
JP2018142631A (en) Support substrate for temporary fixing of wafer and temporary fixing processing method for wafer
KR102029519B1 (en) Porous sheet for suction applications and replaceable surface layer used therein
JP5588796B2 (en) Tape sticking method and tape sticking apparatus
JP2021190642A (en) Electrode formation method
JP2014088523A (en) Adhesive sheet for manufacturing semiconductor device, and method for manufacturing semiconductor device
TWI603428B (en) Mounting device for handling structured substrates
KR20090111390A (en) Vacuum pad for vacuum chuck and its manufacturing method
JP4788256B2 (en) Multilayer substrate manufacturing method

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 16707744

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2017546228

Country of ref document: JP

Kind code of ref document: A

ENP Entry into the national phase

Ref document number: 20177025074

Country of ref document: KR

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 15557202

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 16707744

Country of ref document: EP

Kind code of ref document: A1