WO2016131400A1 - 高灵敏度的纳米光晶体管及其制作方法和应用其的光通信器件及光谱分光器件 - Google Patents

高灵敏度的纳米光晶体管及其制作方法和应用其的光通信器件及光谱分光器件 Download PDF

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WO2016131400A1
WO2016131400A1 PCT/CN2016/073655 CN2016073655W WO2016131400A1 WO 2016131400 A1 WO2016131400 A1 WO 2016131400A1 CN 2016073655 W CN2016073655 W CN 2016073655W WO 2016131400 A1 WO2016131400 A1 WO 2016131400A1
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phototransistor
region
light
electrode
photo transistor
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French (fr)
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但亚平
赵兴岩
王昂
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Shanghai Jiao Tong University
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Shanghai Jiao Tong University
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/24—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only two potential barriers, e.g. bipolar phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to a nano device, in particular to a high sensitivity nano photo transistor, a manufacturing method thereof and an optical communication device and a spectral spectroscopic device using the same.
  • a phototransistor also known as a phototransistor or a phototransistor, is a photoelectric conversion device whose basic principle is to absorb light energy and convert it into electrical energy when illuminated onto a PN junction.
  • the structure of the phototransistor is similar to that of a conventional triode, and has three partitions of a base region 1, an emitter region 2, and a collector region 3. According to the doping of the three partitions, it is also classified into an NPN type and a PNP type, and an NPN type photo transistor is shown in FIGS.
  • the base area is often made larger, the area of the emission area is made smaller, and the incident light is mainly absorbed by the base area.
  • the PN junction of the phototransistor having photosensitive characteristics is irradiated with light, a photocurrent is formed, and the generated photocurrent flows from the base region into the emission region, thereby obtaining a signal current equivalent to ⁇ times in the collector region loop. . Therefore, it has a large photocurrent amplification effect, that is, a high sensitivity, compared with a photodiode.
  • nanometer-scale nanodevices With the development of nanotechnology, various nanometer-scale nanodevices have appeared. These nanodevices are fabricated on nanostructures such as nanowires, nanobelts, nanopillars, etc., or the functional size of their functional parts is on the nanometer scale. Utilizing the excellent properties of the material at the nanometer scale, it is superior to the performance of ordinary devices. For example, electroluminescent devices, nanoscale metal-oxide-semiconductor field effect transistors, and other semiconductor devices fabricated on single crystal silicon nanowires. However, nanoscale phototransistors (nanophototransistors) have not been reported.
  • a phototransistor reduces the junction capacitance between the base region and the collector region by using a nanostructure to improve its frequency response characteristics.
  • the present invention provides a phototransistor including a collector region, a base region, and an emitter region, a first PN junction between the collector region and the base region, the emitter region and the a second PN junction between the base regions, wherein the collector region, the base region and the emitter region are formed on a strip-shaped nanostructure, and the first PN junction is formed in the nanometer a first cross section of the structure; the first PN junction and the second PN junction being a homojunction or a heterojunction.
  • a junction area of the first PN junction is equal to an area of the first cross section.
  • the nanostructures are nanowires, nanorods, nanopillars or nanoribbons.
  • the second PN junction is formed on a second cross section of the nanostructure, and a junction area of the second PN junction is equal to an area of the second cross section.
  • the base region is between the first cross section and the second cross section, and the collector region is away from the second cross section in the first cross section
  • the emitter region is on a side of the second cross section that is away from the first cross section.
  • the nanostructures are straight strips or curved strips.
  • first cross section and the second cross section are quadrilateral, triangular or circular.
  • the photo transistor further includes a first electrode electrically connected to the collector region and a second electrode electrically connected to the emitter region.
  • the nanostructures extend uniformly between the first electrode and the second electrode.
  • the phototransistor includes a plurality of the nanostructures, the plurality of nanostructures being connected in parallel between the first electrode and the second electrode, and each of the collector regions of the nanostructures Electrically connected to the first electrode, the emitter regions of each of the nanostructures are electrically connected to the second electrode.
  • the plurality of nanostructures are uniformly extended between the first electrode and the second electrode
  • the plurality of nanostructures are parallel to each other, and a spacing between any two adjacent nanostructures is 100 nm to 500 nm, and the number of the plurality of nanostructures is 2-50.
  • junction area of the first PN junction is between 10 nm ⁇ 10 nm and 5 ⁇ m ⁇ 5 ⁇ m.
  • junction area of the second PN junction is between 10 nm ⁇ 10 nm and 5 ⁇ m ⁇ 5 ⁇ m.
  • the technical problem to be solved by the present invention is to provide a phototransistor which, by designing a base region and a collector region on a nanostructure, uses the collector region as a main light absorbing region to improve its photoelectric conversion efficiency.
  • the length of the base region of the photo transistor is not greater than the length of the collector region.
  • the length of the collector region is between 0.5 ⁇ m and 2 ⁇ m.
  • the base region has a length of between 30 nm and 500 nm.
  • the photo transistor is of a PNP type or an NPN type.
  • the photo transistor is of a PNP type
  • the material of the collector region is a lightly doped P-type semiconductor material
  • the material of the base region is an N-type semiconductor material
  • the emitter region Material is heavily doped The P-type of the semiconductor material.
  • the doping concentration of the heavily doped is 10 18 to 10 20 cm -3
  • the doping concentration of the light doping is 10 16 to 10 10 cm -3 .
  • the photo transistor is of an NPN type
  • the material of the collector region is a lightly doped N-type semiconductor material
  • the material of the base region is a P-type semiconductor material
  • the emitter region The material is a heavily doped N-type semiconductor material.
  • the doping concentration of the heavily doped is 10 18 to 10 20 cm -3
  • the doping concentration of the light doping is 10 16 to 10 10 cm -3 .
  • first electrode and the second electrode are formed of the semiconductor material having the same doping concentration as the semiconductor material of the emission region.
  • a photo transistor which reduces contact resistance and suppresses an effect effect by providing a transition region between a collector region of a nanostructure and an electrode electrically connected thereto ).
  • the photo transistor further has a transition region on the nanostructure having the same material as the material of the first electrode, the transition region being between the collector region and the first electrode, The collector region is electrically connected to the first electrode through the transition region.
  • the surfaces of the first electrode and the second electrode have a metal layer for guiding the wires.
  • a photo transistor which reduces a dark current by passivating a surface of a nanostructure.
  • the surface of the nanostructure of the photo transistor has a passivation layer having a thickness of 5 to 30 nm.
  • the nanostructured material is silicon, germanium, indium phosphide or indium gallium arsenide.
  • the passivation layer is a silicon oxide layer, a silicon nitride layer, an aluminum oxide layer or a hafnium oxide layer.
  • the present invention further provides a method for fabricating a phototransistor for preparing the photo transistor described above, wherein the material of the nanostructure is monocrystalline silicon, and the preparation method comprises the steps of:
  • Doping the nanostructures forms the collector region, the base region, and the emitter region.
  • the technical problem to be solved by the present invention is to provide a photo transistor by using a surface plasmon enhancement effect by placing a plurality of metal nanoparticles on the surface of a light absorption region of a silicon-based phototransistor.
  • Phototransistors are also suitable for light in the optical communication band.
  • the collector region of the photo transistor has metal nanoparticles on its surface, and an insulating layer is interposed between the particles and the collector region.
  • the insulating layer has a thickness of 3 to 50 nm, and the insulating layer has a refractive index of 1.4 to 5.
  • the particles have a particle diameter of 10 to 200 nm.
  • the material of the particles is gold or silver.
  • the particles are periodically arranged, and the particles have a distribution density of 2 ⁇ 10 9 cm -2 to 1 ⁇ 10 12 cm -2 .
  • the insulating layer is on a surface of the particle, and the surface of the collector region has a passivation layer, and the passivation layer has a thickness of 5-30 nm.
  • the insulating layer is formed on a surface of the collector region and used to passivate a surface of the collector region.
  • the nanostructured material is single crystal silicon
  • the insulating layer is a silicon nitride layer, an aluminum oxide layer or a tantalum oxide layer.
  • the present invention further provides an optical communication device, characterized in that it comprises the above photo transistor, further comprising an optical waveguide; the optical waveguide transmits an optical signal to the collector region of the photo transistor, The photo transistor outputs a corresponding electrical signal.
  • the optical waveguide is an optical fiber.
  • the optical communication device further includes an antenna, the antenna being a pair of tapered or square strip structures extending toward the nanostructure in a direction perpendicular to an extending direction of the nanostructure, the A pair of tips on the tapered or square strip structure are respectively on opposite sides of the nanostructure and directed toward the nanostructure.
  • the pair of top ends respectively point to the collector regions.
  • the present invention also provides a spectral spectroscopic device for determining the relative optical power P of each of n consecutive wavelengths ⁇ 1 , ⁇ 2 , ..., ⁇ n of incident light irradiated onto the light receiving surface thereof 1 , P 2 , ..., P n , comprising the phototransistor according to any one of claims 8 to 12, 16 to 22, and 24, wherein m of the phototransistors are distributed on the light receiving surface, The m phototransistors respectively output photocurrents I 1 , I 2 , . . . , I m from the first electrode and the second electrode thereof under illumination of the incident light; the m phototransistors The thickness and/or width of the nanostructures are different from each other;
  • the photoelectric response matrix of the m phototransistors to the light of the n consecutive wavelengths ⁇ 1 , ⁇ 2 , . . . , ⁇ n is known
  • the light of the n consecutive wavelengths ⁇ 1 , ⁇ 2 , . . . , ⁇ n each have an extended wavelength range ⁇ 1 , ⁇ 2 , . . . , ⁇ n .
  • each of the wavelength ranges ⁇ 1 , ⁇ 2 , ..., ⁇ n are equal to each other.
  • the present invention provides a phototransistor in which a PN junction between a collector region, a base region, and an emitter region is formed by forming a collector region, a base region, and an emitter region on a strip-shaped nanostructure.
  • the junction capacitance is greatly reduced, and the frequency response characteristic of the photo transistor is effectively improved;
  • the phototransistor of the present invention determines the base region and the set by confirming that the collector region is the most effective light absorbing region.
  • the layout of the electrical region that is, the length of the base region and the collector region, effectively improves the photoelectric conversion efficiency of the photo transistor; the phototransistor of the present invention effectively introduces a transition region between the collector region and the electrode on the nanostructure.
  • the phototransistor of the present invention is effective in arranging a passivation layer on the surface of the nanostructure by confirming the influence of the surface recombination speed of the nanostructure on the photocurrent of the phototransistor Increasing the photocurrent generated by the phototransistor; for the silicon-based phototransistor of the invention, by arranging a plurality of metal nanoparticles on the surface of the nanostructure, especially the surface of the collector region Tablets, which effectively enhance the optical communication wavelength band of light absorption;
  • the present invention accordingly provides a method of making the above-mentioned phototransistor.
  • the present invention provides an optical communication device using the above-described phototransistor, in particular, a silicon-based phototransistor with metal nanoparticles, which is more convenient to fabricate and can absorb light in an optical communication band. With high absorption rate and photoelectric conversion efficiency, this optical communication device has a good application prospect; and, by providing an antenna on the optical communication device, its light absorption efficiency and photoelectric conversion efficiency can be further improved.
  • the present invention also provides an application of a phototransistor, which is a spectral spectroscopic device having a light receiving surface and a plurality of phototransistors having different structural parameters arranged on the light receiving surface, and the incident light is irradiated onto the light receiving surface. These photo transistors respectively output respective photocurrents.
  • the spectral spectroscopic device of the present invention is capable of obtaining the relative optical power of each of the plurality of consecutive wavelengths of light contained in the incident light, in the case where their photoelectric response to a plurality of consecutive wavelengths is known. Therefore, the spectral spectroscopic device of the present invention can analyze the wavelengths and components (relative optical power) contained in the light beam, and has a good application prospect in optical detection.
  • NPN type prior art photo transistor
  • FIG. 2 is a cross-sectional structural view of the photo transistor shown in FIG. 1.
  • FIG. 2 is a cross-sectional structural view of the photo transistor shown in FIG. 1.
  • Figure 3 is a top plan view of a phototransistor of the present invention in a preferred embodiment.
  • FIG. 4 is a side elevational view of the phototransistor shown in FIG.
  • Fig. 5 shows a structure having a metal layer on the electrode of the photo transistor shown in Fig. 4.
  • Fig. 6 schematically depicts the formation positions of two PN junctions of the phototransistor of the present invention.
  • Fig. 7 shows the collector region length L1 and the base region length L2 of the photo transistor shown in Fig. 4.
  • Figure 8 is a top plan view of a phototransistor of the present invention in a second preferred embodiment.
  • Figure 9 is a side elevational view of the phototransistor of Figure 8.
  • FIG. 10 shows the fabrication flow of the photo transistor shown in FIG.
  • Fig. 11 is a SEM photograph of a photo transistor shown in Fig. 8 of a PNP type.
  • Fig. 12 is a perspective view showing the photo transistor of Fig. 8 of an NPN type.
  • Fig. 13 is a view showing the photocurrent-voltage relationship generated by the respective portions of the phototransistor shown in Fig. 8 receiving light.
  • Fig. 14 is a view showing the photocurrent-voltage relationship generated by the respective portions of the phototransistor shown in Fig. 3 receiving light.
  • Figure 15 shows the photocurrent-voltage relationship of the phototransistor shown in Figure 8 having different base lengths.
  • Figure 16 shows the dark current-voltage relationship of the phototransistor shown in Figure 8 having different base lengths.
  • Figure 17 shows the photocurrent-voltage relationship of the phototransistor shown in Figure 8 with different surface recombination velocities.
  • Figure 18 shows the dark current-voltage relationship of the phototransistor shown in Figure 8 with different surface recombination velocities.
  • Fig. 19 shows the frequency response characteristics of the photo transistor shown in Fig. 8 of an NPN type having different base lengths.
  • Figure 20 is a top plan view of a phototransistor of the present invention in a third preferred embodiment.
  • Figure 21 is a side elevational view of the phototransistor shown in Figure 20.
  • Figure 22 is a top plan view of an optical communication device of the present invention in a preferred embodiment.
  • Figure 23 is a side elevational view of the optical communication device shown in Figure 22.
  • Figure 24 is a side elevational view of the optical communication device of the present invention in a second preferred embodiment.
  • Figure 25 is a top plan view of the optical communication device of the present invention in a third preferred embodiment, in which the optical waveguide is not shown.
  • Figure 26 is a side elevational view of the optical communication device shown in Figure 25, showing the optical waveguide.
  • Figure 27 is a top plan view of the optical communication device of the present invention in a fourth preferred embodiment.
  • Figure 28 shows, in one example, an optical transistor of the present invention having an absorption cross section and corresponding photo-electrical response to light having a wavelength in the range of 400 nm to 1200 nm, the structure of which is of the NPN type or PNP type.
  • Figure 29 shows, in another example, an optical transistor of the present invention having an absorption cross section and corresponding photo-electrical response to light having a wavelength in the range of 400 nm to 1200 nm, the structure of which is of the NPN type or PNP type.
  • Figure 30 is a schematic view showing the structure of a spectral spectroscopic device of the present invention in a fifth preferred embodiment.
  • Figure 31 shows, in one example, the absorption of light for a wavelength range of between 400 nm and 1600 nm for five phototransistors used in the spectral spectroscopic device of the present invention, the structures of the five phototransistors being NPN, respectively. Type or PNP type.
  • the phototransistor of the present invention includes a collector region 112, a base region 111, and an emitter region 113 formed on a nanostructure of a strip of semiconductor material.
  • the photo transistor may be of a PNP type or an NPN type, that is, the collector region 112 is a P-type doped region on the nanostructure, the base region 111 is an N-type doped region on the nanostructure, and the emitter region 113 is a nanostructure.
  • the collector region 112 is an N-type doped region on the nanostructure
  • the base region 111 is a P-type doped region on the nanostructure
  • the emitter region 113 is an N-type doped region on the nanostructure .
  • the collector region 112, the base region 111, and the emitter region 113 are sequentially arranged in the extending direction of the nanostructures, as shown in Fig. 3 from right to left, and two PN junctions are formed at the interface therebetween.
  • the two PN junctions may be homojunctions or heterojunctions.
  • the interface between them is a cross section of the nanostructure, that is, a section perpendicular to the direction in which the nanostructure extends.
  • the junction area of the PN junction is equal to the area of the cross section of the nanostructure in which it is located. That is, the nanostructures in the collector region 112, the base region 111, and the emitter region 113 are integrally doped to form the three regions, and the interfaces of the three regions are perpendicular to the extending direction of the nanostructure.
  • a first PN junction between the collector region 112 and the base region 111 is formed on the cross section 141 of the nanostructure. Since the nanostructure has a nanoscale dimension at least in one of two mutually perpendicular directions perpendicular to its direction of extension, preferably, it has a nanoscale dimension in both of the above directions, and thus the cross section 141 is known. The area is small so that the junction area of the first PN junction is small, whereby the junction capacitance is small. The adverse effects of the large junction capacitance between the base and collector regions of prior art phototransistors on their performance will be eliminated.
  • a second PN junction between the emitter region 113 and the base region 111 is formed on the cross-section 142 of the nanostructure. Since the area of the cross section 142 is small, the junction area of the second PN junction is small, whereby the junction capacitance is small.
  • the junction area of the first PN junction is between 10 nm x 10 nm and 5 ⁇ m x 5 ⁇ m
  • the junction area of the second PN junction is between 10 nm x 10 nm and 5 ⁇ m x 5 ⁇ m.
  • the nanostructures used in the present invention may be nanowires, nanorods, nanopillars or nanobelts, etc.; they may be straight strips or curved strips; they may extend uniformly along their extension direction (ie, each Where the cross-section is the same), it may also be unevenly extending along its extending direction (ie, the cross-section of each part is different); for uniformly extending nano-structures, the cross-section may be a polygon, such as a quadrangle or a triangle, It may also be a circular shape or an irregular pattern; for a non-uniformly extending nanostructure, the cross section may vary in shape.
  • the collector region 112 and the emitter region 113 are electrically connected to the first electrode 121 and the second electrode 122, respectively.
  • the first electrode 121 and the second electrode 122 are also doped semiconductor materials, which are separately collected and collected.
  • the region 112 is in contact with the emitter region 113 thereby achieving electrical connection.
  • the first electrode 121 and the second electrode 122 There are metal layers 131 and 132 thereon for extracting wires, for example, aluminum layers. It should be noted that the metal layers on the first and second electrodes are not necessary, especially in integrated optics.
  • the length L2 of the base region 111 of the photo transistor is not greater than the length L1 of the collector region 112.
  • the lengths of the base region and the collector region herein refer to the length of the portion of the corresponding nanostructure in the region in the direction in which the nanostructure extends.
  • the length L1 of the collector region 112 is between 0.5 ⁇ m and 2 ⁇ m
  • the length L2 of the base region 111 is between 30 nm and 500 nm.
  • the doping conditions of the collector region 112, the base region 111, the emitter region 113, the first electrode 121, and the second electrode 122 are: the collector region 112 is lightly doped, and the base region 111 is doped. The impurity, emitter region 113, the first electrode 121, and the second electrode 122 are heavily doped.
  • the collector region 112 is P-type lightly doped, the doping concentration is 10 16 cm -3 to 10 10 cm -3 ; the base region 111 is N-doped, doped The impurity concentration is 10 16 cm -3 to 10 18 cm -3 ; the emitter region 113 is heavily doped with P type, and the doping concentration is 10 18 cm -3 to 10 20 cm -3 ; the first electrode 121 and the second electrode 122 Like the emitter region 113, it is heavily doped with a P-type with a doping concentration of 10 18 cm -3 to 10 20 cm -3 .
  • the collector region 112 is N-type lightly doped, the doping concentration is 10 16 cm -3 to 10 10 cm -3 ; the base region 111 is P-doped, and the doping concentration is 10 16 cm -3 to 10 18 cm -3 ; the emitter region 113 is N-type heavily doped, and the doping concentration is 10 18 cm -3 to 10 20 cm -3 ; the first electrode 121 and the second electrode 122 and the emitter region The same as 113, it is heavily doped with N type, and the doping concentration is 10 18 cm -3 to 10 20 cm -3 .
  • the transition region 214 is heavily P-doped with a doping concentration of 10 18 cm -3 to 10 20 cm -3 ; for the NPN-type phototransistor of the present invention, the transition region 214 is heavily doped with N type and has a doping concentration of 10 18 cm -3 to 10 20 cm -3 .
  • the Earley effect can be alleviated and suppressed.
  • the nanostructured material of the phototransistor of the present invention may be a semiconductor such as silicon, germanium, indium phosphide or indium arsenide gallium, preferably monocrystalline silicon.
  • Fig. 10 is a flow chart showing the photo transistor in the present embodiment in which the material is single crystal silicon, in which the left column shows a side view of the photo transistor and the right column is a top view. It mainly includes the following steps:
  • the SOI silicon wafer is selected, mainly the SOI silicon wafer with the appropriate top silicon thickness, for example, the SOI silicon wafer with the top silicon of 10 nm-200 nm, and the photo transistor will pass the etching of the top silicon. It is made on the buried silicon oxide. Clear the silicon wafer Washing, preferably the natural oxide layer of the top silicon surface should be removed.
  • Photolithography of the top silicon of the SOI silicon wafer followed by etching to form a strip-shaped single crystal silicon nanostructure on the buried silicon oxide and a structure for forming the first and second electrodes at both ends thereof .
  • the etching may be dry etching or wet etching, and in addition, depending on the size of the photo transistor required, electron beam direct writing may be used instead of photolithography.
  • the collector region 212, the base region 211, and the emitter region 213 of the phototransistor are formed on the structure.
  • the order of the implantation may be designed according to the process conditions, and at each injection, a window of the photoresist mask is formed by one or more lithography (or electron beam direct writing) for ion implantation; or Depositing a metal layer, a silicon oxide layer or a silicon nitride layer, and then forming a mask on the metal layer, the silicon oxide layer or the silicon nitride layer by one or more photolithography (or electron beam direct writing) and etching steps Window for ion implantation.
  • lithography or electron beam direct writing
  • steps 2 and 3 can be interchanged, that is, the first selection region is doped and then etched to form a structure of the photo transistor.
  • a metal layer for extracting the wires is formed on the first electrode 221 and the second electrode 222, or in order to save the process step, the metal layer may be first deposited and then doped to utilize the metal layer as a mask for ion implantation.
  • an SOI silicon wafer having a top silicon doping concentration equal to that of the collector region required for the photo transistor can be selected, so that the doping step of the collector region can be omitted in the subsequent doping process.
  • the process steps designed using the SOI silicon wafer according to the structure of the photo transistor to be formed may be variously changed. The description herein is merely for providing an implementation possibility, and not for The limitations of its process flow.
  • the phototransistor of the previous embodiment can also be fabricated in a similar process, as long as the step of making the transition region is omitted.
  • the surface doping treatment of the doped nanostructures can also be performed to reduce the surface recombination velocity S, thereby further improving the performance of the phototransistor formed thereby.
  • the passivation treatment is performed by forming a passivation layer on the surface of the nanostructure, and the nanostructure of the single crystal silicon can form an oxide layer of 5 to 30 nm on the surface thereof by dry oxidation, or by atomic layer deposition.
  • An (ALD) or chemical vapor deposition process deposits a passivation layer of the above thickness on its surface.
  • a 5 to 30 nm silicon nitride layer, an aluminum oxide layer or a hafnium oxide layer may also be formed as a passivation layer on the surface of the nanostructure, particularly the surface of the collector region.
  • Fig. 11 shows an example of a photo transistor in the present embodiment which is fabricated by the above process flow, which is a PNP type in which the nanostructure is a single crystal silicon having a length of 3 to 5 ⁇ m, a width of 200 nm, and a thickness of 200 nm. Nanowires.
  • the length of the collector region is 1 ⁇ m
  • the doping concentration is 1 ⁇ 10 15 cm ⁇ 3
  • the length of the base region is 100 to 500 nm
  • the doping concentration is 5 ⁇ 10 17 cm ⁇ 3
  • the length of the emitter region is 1 ⁇ m.
  • the doping concentration is 5 ⁇ 10 19 cm -3 ; the length of the transition region is 1 ⁇ m, the doping concentration is 5 ⁇ 10 19 cm -3 ; and the doping concentration of the first electrode and the second electrode is 5 ⁇ 10 19 cm - 3 .
  • Fig. 12 is a perspective view showing a photo transistor of the present embodiment which is fabricated by the above process flow, which is of the NPN type.
  • FIG. 13 shows the photocurrent-voltage relationship generated by the light receiving portions of the PNP type phototransistor
  • FIG. 14 shows the photocurrent-voltage relationship generated by the light receiving portions of the NPN phototransistor, I c in the figure.
  • V c is the collector voltage bias
  • Figure 15 shows the photocurrent-voltage relationship of PNP-type phototransistors with different base lengths.
  • I ph' refers to photocurrent, and V E is Emitter voltage bias
  • Figure 16 shows the dark current-voltage relationship of PNP-type phototransistors with different base lengths, where I dark' refers to dark current and V E is the emitter voltage bias
  • Figure 17 shows Photocurrent-voltage relationship of PNP type phototransistors with different surface recombination speeds
  • Figure 18 shows the dark current-voltage relationship of PNP type phototransistors with different surface recombination velocities
  • Figure 19 shows NPN types with different base lengths The frequency response characteristics of phototransistors.
  • the PNP-type or NPN-type portions of the phototransistor of the present invention mainly play a collector region in the process of generating photons by generating photons, and the photoelectric conversion efficiency is larger than that of the base region. There are more orders of magnitude, even considering the difference in the light-receiving area of the two samples, which is much larger than the base area.
  • the length of the base region has an influence on the photocurrent.
  • the length of the collector area has an effect on the frequency response characteristics. The shorter the collector area, the higher the cutoff frequency.
  • the single crystal silicon material has low absorption efficiency for light in the optical communication band, it is not suitable for use as an optical communication device. Therefore, in the third preferred embodiment of the present invention, as shown in Figs. 20 and 21, a plurality of metals are placed on the surface of the light absorbing region of the silicon-based photo transistor 300, mainly on the surface of the collector region 312.
  • the nanoparticle 315 enhances the absorption of light in the optical communication band by utilizing the surface plasmon enhancement effect.
  • a plurality of metal nanoparticles may be placed on the surface of the collector region to further increase the light absorption efficiency of the optical communication band. .
  • the metal nanoparticles 315 may be gold nanoparticles or silver nanoparticles, preferably having a particle diameter of 10 to 200 nm, uniformly or substantially uniformly dispersed on the surface of the collector region 312, preferably at the collector region 312.
  • the surface is periodically arranged with a distribution density of 2 ⁇ 10 9 cm -2 to 1 ⁇ 10 12 cm -2 .
  • An insulating layer 316 is provided between the plurality of metal nanoparticles 315 and the collector region, and preferably the insulating layer 316 has a thickness of 5 to 30 nm.
  • the insulating layer may be distributed on the surface of the collector region 312 as shown in FIG. 21 or may be distributed on the surface of each of the metal nanoparticles 315.
  • the function of the insulating layer is to ensure the insulation between the respective metal nanoparticles 315 and the collector region 312 on the one hand, and more importantly, it should have a refractive index matching the respective metal nanoparticles 315 and the collector region 312.
  • the refractive index is such that light waves excited by the respective metal nanoparticles 315 can enter the collector region 312 with low loss.
  • the insulating layer 316 has a refractive index of 1.4 to 5.
  • an insulating layer 316 of silicon nitride or hafnium oxide material is preferably used.
  • the aforementioned passivation layer may be formed on the surface of the collector region, the surface recombination rate is lowered, and the performance of the photo transistor is improved.
  • the insulating layer can simultaneously function as the passivation layer described above, so that it is not necessary to additionally form a passivation layer on the surface of the collector region.
  • the other portions of the phototransistor in this embodiment are the same as the previous embodiment, and have a base region 311, an emitter region 313, and a transition region 314, and electrodes are not shown.
  • metal nanoparticles may be placed on the surface of the collector region after the photo transistor of the previous embodiment is completed.
  • FIG. 22 and 23 show a structure of an optical communication device to which the photo transistor 300 is applied, which includes a photo transistor 300 and an optical fiber 10.
  • the metal layers 331, 332 on the first and second electrodes of the phototransistor 300 lead out the wires 361, 362.
  • the optical fiber 10 traverses the collector region 312 above the collector region 312, where the light is coupled into the collector region 312.
  • the metal nanoparticles 315 on the surface of the collector region 312 enhance the absorption of the light in the optical communication band by the surface plasmon enhancement effect, that is, improve the coupling efficiency. It should be noted that the size of the actually used optical fiber is generally much larger than that of the photo transistor of the present invention.
  • optical fiber drawn in the drawings of the present specification is only used to indicate the positional relationship with the photo transistor, and does not indicate the dimensional relationship between the two.
  • other optical waveguides can also be used to transmit light and couple the optical signals into the phototransistor 300, such as a planar dielectric optical waveguide or a strip dielectric optical waveguide.
  • the optical fiber 10 can also extend in the direction in which the collector region 312 extends above the collector region 312, as shown in FIG. 24, and the light in the optical fiber 10 is coupled into the collector region 312.
  • the optical fiber may be arranged in other manners to directly couple light in the optical fiber into the collector region of the photo transistor; in addition, a coupler may be used to couple the light in the optical fiber.
  • a coupler may be used to couple the light in the optical fiber.
  • the phototransistor of the present invention can be fabricated directly on an optical fiber.
  • the antenna is a pair of tapered strip-shaped structures 21, 22 extending toward the nano-structure in a direction perpendicular to the extending direction of the nano-structure, and a pair of top ends respectively On both sides of the nanostructure and pointing to the nanostructure, especially to the collector region 312, the closest distance from each tip to the collector region 312 is 50 nm.
  • the material of the strip structures 21, 22 is monocrystalline silicon, which can be formed while etching on the SOI silicon wafer to form the nanostructure. Alternatively, a rectangular strip structure or a strip structure of other shapes may be employed.
  • the optical communication device in this embodiment employs a strip dielectric optical waveguide 11 having a square cross section.
  • the relative positional relationship between the optical waveguide 11 and the photo transistor 300 is the same as that of the optical communication device of the first configuration (Figs. 22, 23), and the optical waveguide 11 is not shown in Fig. 25 in order to show the clear strip structures 21, 22.
  • the optical waveguide 11 can also be arranged in other manners, such as the manner shown in Figure 24, to directly couple light in the fiber into the collector region of the phototransistor; in addition, a coupler can be used to couple the light in the fiber.
  • a photo transistor and a pair of strip structures can be fabricated directly on the optical fiber.
  • the phototransistor of the present invention comprises a plurality of nanostructures as described above, each of which includes current collection.
  • the zone, the base zone and the emitter zone preferably also comprise a transition zone, a passivation layer and metal nanoparticles.
  • the nanostructures are connected in parallel between the first electrode and the second electrode, and the current collecting regions of each nanostructure are electrically connected to the first electrode (the two are directly connected or connected through a transition region), and each nanostructure emitting region is Electrically connected to the second electrode.
  • the nanostructures extend uniformly between the first electrode and the second electrode, parallel to each other.
  • the spacing between any two adjacent nanostructures is from 100 nm to 500 nm, and the number of these nanostructures is from 2 to 50.
  • FIG. 27 shows an example of an optical communication device to which the above-described photo transistor is applied, such as n nanostructures 401, 402, . . . , 40n of the nanostructure of photo transistor 300 being connected in parallel between the first electrode 431 and the second electrode 432, A photo transistor 400 is formed.
  • the optical fiber 10 traverses the collector regions of the n nanostructures 301, 302, ..., 30n to couple optical signals into the n collector regions.
  • the phototransistors of various structures as described in the various embodiments above generate photocurrent after being irradiated with light, and can be used for detection after the photocurrent is taken out from the first and second electrodes, due to different structural parameters (such as nanometers thereof).
  • the width of the light transistor of the mechanism width, width, etc. is different for different wavelengths of light, and the magnitude of the generated photocurrent is related to the absorption capacity.
  • the larger the absorption capacity the larger the photocurrent generated.
  • This absorption capacity can be described by parameters such as absorption cross section and absorption rate, and the photocurrent generated by the phototransistor is approximately proportional to its absorption cross section or absorption rate to the incident light.
  • the FDTD module of Lumerical simulation software simulates the absorption cross-section of two light-emitting transistors of the structure shown in Figures 11 and 12 for wavelengths between 400 nm and 1200 nm.
  • the corresponding MEMS response was simulated using the DEVICE module of Lumerical simulation software.
  • the structure of the photo transistor in the example of FIG. 28 is a cross-sectional area of 100 nm ⁇ 100 nm, a total length of 3 ⁇ m, a base length of 100 nm, an emission area of 1 ⁇ m, a collector area of 1 ⁇ m, and a transition region of 900 nm; the phototransistor of the example of FIG.
  • the structure is a nanowire thickness of 200 nm, a width of 240 nm, a total length of 3 ⁇ m, a base length of 40 nm, an emission area of 1 ⁇ m, a collector area of 1 ⁇ m, and an excessive area of 960 nm.
  • this phototransistor having a nanostructure having a thickness of 100 nm has different absorption cross sections for light of different wavelengths, and has two absorption peaks between 400 nm and 1200 nm, respectively at 420 nm and 600 nm. Accordingly, when illuminated by the two wavelengths of light, it will produce a larger photocurrent.
  • the photoelectric response of the photo transistor is about 40 A/W, that is, when it is irradiated with incident light having an optical power of 1 W and a wavelength of 420 nm, the photocurrent generated therefrom It is 40A.
  • the photoelectric response of the photo transistor is about 10 A/W for incident light having a wavelength of 600 nm.
  • the photoelectric response is approximately proportional to the absorption cross section, that is, the photocurrent generated by the photo transistor is approximately proportional to its absorption cross section to the incident light.
  • this phototransistor having a nanostructure having a thickness of 200 nm has different absorption cross sections for light of different wavelengths, and has two absorption peaks between 600 nm and 1200 nm, respectively, at 600 nm and At 680nm. Accordingly, when illuminated by the two wavelengths of light, it will produce a larger photocurrent. As shown in the figure, the photoelectric response of the photo transistor is about 300 A/W for incident light having a wavelength of 600 nm, and the photoelectric response of the photo transistor is about 250 A/W for incident light having a wavelength of 680 nm.
  • a spectral spectroscopic device can be designed to analyze the inclusion of incident light.
  • a plurality of phototransistors of nanostructures are distributed on the light receiving surface. When the light to be detected is irradiated onto the light receiving surface, the plurality of photo transistors will respectively output their photocurrents.
  • FIG. 30 depicts an example of using four phototransistors, specifically, a substrate and four phototransistors 51, 52, 53, and 54 distributed on the upper surface of the substrate, the upper surface of which serves as Light receiving surface.
  • the light to be detected is irradiated from the top to the bottom on the light receiving surface, partially absorbed by the four photo transistors 51, 52, 53 and 54, and the four photo transistors 51, 52, 53 and 54 are then from the first and second electrodes thereof.
  • the respective photocurrents I 1 , I 2 , I 3 and I 4 are output for analysis.
  • photocurrents I 1 , I 2 , I 3 , and I 4 flow out from the first electrodes of the four phototransistors 51 , 52 , 53 , and 54 , respectively , and flow into the second electrode; or photocurrents I 1 , I 2 , I 3 and I 4 respectively flow out from the second electrodes of the four photo transistors 51, 52, 53 and 54, and flow into the first electrode.
  • the photoelectric response of m light transistors to light of n consecutive wavelengths ⁇ 1 , ⁇ 2 , ..., ⁇ n is acquired in advance. This can be obtained by experimental measurement or software simulation, and should be measured experimentally for better practicality. Specifically, for example, by irradiating the i-th photo transistor with a uniform light beam whose wavelength of the optical power P0 is the j-th wavelength ⁇ j and measuring the output photo current I0 i , the i-th photo-transistor pair can be obtained.
  • the photocurrent matrix output by the m phototransistors is:
  • the number m of phototransistors used in the inventive spectral spectroscopic device should be not less than the number n of wavelengths; and, in the phototransistors used, no more than two phototransistors have the same photoresponse for the n wavelengths of light. .
  • the light of n consecutive wavelengths ⁇ 1 , ⁇ 2 , . . . , ⁇ n in actual use is not light of wavelengths exactly ⁇ 1 , ⁇ 2 , . . . , ⁇ n but at the wavelength ⁇ .
  • Extending light of a certain wavelength range ⁇ , and passing through the extended wavelength range ⁇ , which is in contact with the light of two adjacent wavelengths thereof, the wavelength range ⁇ may be extended from the wavelength ⁇ to the direction of increasing ⁇ , or It is extended from the wavelength ⁇ to the direction in which ⁇ decreases, and may also be a direction in which the wavelength ⁇ increases and decreases toward ⁇ , respectively.
  • ⁇ is taken as a positive value
  • ⁇ is taken as a negative a value
  • the wavelength range ⁇ partially extends from the wavelength ⁇ to the direction in which ⁇ increases, and partially extends from the wavelength ⁇ to the direction in which ⁇ decreases
  • ⁇ is taken as a positive value (corresponding to the increase to ⁇ )
  • the maximum value of the direction extension) and the negative value correspond to the maximum value of its extension to the direction in which ⁇ decreases).
  • the wavelength range ⁇ 10 nm, wherein light having a wavelength of 500 nm refers to light having a wavelength ranging from 500 nm to 510 nm, and light having a wavelength of 510 nm is Light having a wavelength ranging from 510 nm to 520 nm, ..., light having a wavelength of 590 nm refers to light having a wavelength ranging from 590 nm to 600 nm; or, light having a wavelength of 500 nm refers to light having a wavelength ranging from 490 nm to 510 nm at a wavelength of Light at 510 nm refers to light having a wavelength ranging from 500 nm to 510 nm, ..., light having a wavelength of 590 nm refers to light having a wavelength ranging from 580 nm to 590 nm; or, where light having a wavelength of 500 nm refers to light having a wavelength ranging from 500 nm to 510 nm, and
  • the i-th phototransistor is simulated over the wavelength range [ ⁇ 1 , ⁇ n ] to obtain the n wavelengths ⁇ 1 , ⁇ 2 , ..., ⁇
  • the photoelectric response value M ij at the wavelength ⁇ j should be taken as the integral of the photoelectric response in the wavelength range ⁇ with respect to the wavelength, that is, the portion of the photoelectric response curve below the wavelength range ⁇ area.
  • the photocurrent output by the phototransistor is the result of accumulating the photocurrent portions of the respective wavelengths in the wavelength range [ ⁇ 1 , ⁇ n ], and the photocurrent portion corresponding to the jth wavelength is in the wavelength range.
  • the result of accumulation on ⁇ is because the photocurrent output by the phototransistor is the result of accumulating the photocurrent portions of the respective wavelengths in the wavelength range [ ⁇ 1 , ⁇ n ], and the photocurrent portion corresponding to the jth wavelength is in the wavelength range. The result of accumulation on ⁇ .
  • the photoelectric response matrix of the light of the n wavelengths ⁇ 1 , ⁇ 2 , . . . , ⁇ n of the m phototransistors is obtained according to the experimental measurement, and then the n wavelengths ⁇ 1 , ⁇ 2 , . . . , ⁇ are calculated according to the photoelectric response matrix.
  • the method of relative optical power of n light can obtain the most accurate results.
  • the measurement of the photoelectric response is inconvenient and the analog photoelectric response is inconvenient
  • the cross section is approximately proportional.
  • FIG. 31 shows an absorptance curve of five phototransistors having nanostructures having thicknesses of 100 nm, 140 nm, 180 nm, 220 nm, and 260 nm, respectively, in a wavelength range of 400 nm to 1600 nm, wherein the nanostructures have a thickness of 100 nm.
  • the absorptivity curve of the phototransistor is represented by a curve T100
  • the absorptance curve of the nanostructured phototransistor having a thickness of 140 nm is represented by a curve T140
  • the absorptance curve of the nanostructured phototransistor having a thickness of 180 nm is represented by a curve T180
  • the thickness is 220 nm.
  • the absorbance curve of the nanostructured phototransistor is represented by a curve T220
  • the absorbance curve of the nanostructured phototransistor having a thickness of 260 nm is represented by a curve T260.
  • the method of obtaining the photoelectric response of the light of the n wavelengths ⁇ 1 , ⁇ 2 , ..., ⁇ n using the absorption curve of the phototransistor is similar to the above-described absorption cross-section curve, that is, the wavelength of the ith photo transistor
  • the absorption value at the wavelength ⁇ should be taken as the integral of the absorption rate in the wavelength range ⁇ with respect to the wavelength, that is, the absorption rate
  • the area of the curve below the portion within the wavelength range ⁇ is indicated by the shaded portion in FIG.
  • the photoelectric response of a photo transistor to light of n wavelengths ⁇ 1 , ⁇ 2 , ..., ⁇ n is approximately proportional to the absorption of light of the n wavelengths ⁇ 1 , ⁇ 2 , ..., ⁇ n .
  • the photoelectric response can be approximately obtained from the absorption rate.
  • the extended wavelength range ⁇ of the light of the n wavelengths ⁇ 1 , ⁇ 2 , . . . , ⁇ n is set to an equal value, but in other embodiments, as needed
  • the extended wavelength range of the light of the n wavelengths ⁇ 1 , ⁇ 2 , ..., ⁇ n is set to an unequal value
  • the extended wavelength range of the light of the wavelength ⁇ i is ⁇ i as long as the wavelength ⁇ i is satisfied

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Abstract

一种光晶体管，包括集电区（212）、基区（211）和发射区（213）。其中，集电区和基区之间具有第一PN结，发射区和基区之间具有第二PN结，集电区、基区和发射区形成在呈条状的纳米结构上，第一PN结和第二PN结形成在纳米结构的横截面上，其结面积等于横截面的面积。并且，通过设计基区的长度（L2）和集电区的长度（L1）、在纳米结构上布置过渡区（214）、在纳米结构的表面布置钝化层，以及在纳米结构表面、尤其是集电区的表面布置多个金属纳米颗粒（315），有效提高了光晶体管的频率响应特性、光电转换效率，并使硅基的光晶体管对光通信波段的光也有很高的吸收率。还公开了光晶体管的制作方法、应用其的光通信器件和光谱分光器件。

Description

高灵敏度的纳米光晶体管及其制作方法和应用其的光通信器件及光谱分光器件 技术领域
本发明涉及纳米器件，尤其涉及一种高灵敏度的纳米光晶体管、其制作方法和应用其的光通信器件及光谱分光器件。
背景技术
光晶体管(phototransistor)，又称光敏三极管、光电三极管，是一种光电转换器件，其基本原理是光照到PN结上时，吸收光能并转变为电能。光晶体管的结构和普通三极管的结构相类似，具有基区1、发射区2和集电区3这三个分区。根据三个分区的掺杂，其也分为NPN型和PNP型，如图1、2示出的为NPN型的光晶体管。
对于传统的光晶体管，为适应光电转换的要求，往往把基区面积做得较大，发射区面积做得较小，入射光主要被基区吸收。当光晶体管的具有光敏特性的PN结受到光辐射时，形成光电流，由此产生的光生电流由基区进入发射区，从而在集电区回路中得到一个放大了相当于β倍的信号电流。因此，其与光敏二极管相比，具有很大的光电流放大作用，即很高的灵敏度。
但是，传统的光晶体管这一结构(参见图2)必然会引起基区-集电区间的形成大的结电容，而这一大的结电容将直接地限制光晶体管的截止频率，由此影响光晶体管的频响特性，限制其应用。
随着纳米技术的发展，各种纳米尺度的纳米器件纷纷出现，这些纳米器件或者制作于诸如纳米线、纳米带、纳米柱等的纳米结构上，或者其功能部分的结构尺寸在纳米尺度，通过利用材料在纳米尺度下的优异特性，而获得优于普通器件的性能。例如制作在单晶硅纳米线上的电致发光器件、纳米尺度的金属-氧化物-半导体场效应晶体管以及其他的半导体器件。但是，纳米尺度的光晶体管(纳米光晶体管)尚未见诸报道。
因此，本领域的技术人员致力于开发一种高灵敏度的纳米光晶体管，改善光晶体管的性能，提升其应用前景。
发明内容
有鉴于现有技术的上述缺陷，本发明所要解决的技术问题在第一个方面是提供 一种光晶体管，通过使用纳米结构，降低基区-集电区之间结电容，提高其频响特性。
为实现上述目的，本发明提供了一种光晶体管，包括集电区、基区和发射区，所述集电区和所述基区之间具有第一PN结，所述发射区和所述基区之间具有第二PN结，其特征在于，所述集电区、所述基区和所述发射区形成在呈条状的纳米结构上，所述第一PN结形成在所述纳米结构的第一横截面上；所述第一PN结和所述第二PN结为同质结或异质结。
进一步地，所述第一PN结的结面积等于所述第一横截面的面积。
可选地，所述纳米结构为纳米线、纳米棒、纳米柱或纳米带。
进一步地，所述第二PN结形成在所述纳米结构的第二横截面上，所述第二PN结的结面积等于所述第二横截面的面积。
进一步地，在所述纳米结构上，所述基区在所述第一横截面和所述第二横截面之间，所述集电区在所述第一横截面远离所述第二横截面的一侧，所述发射区在所述第二横截面远离所述第一横截面的一侧。
可选地，所述纳米结构为直的条状或弯曲的条状。
可选地，所述第一横截面和所述第二横截面为四边形、三角形或圆形。
进一步地，所述光晶体管还包括与所述集电区电连接的第一电极和与所述发射区电连接的第二电极。
进一步地，所述纳米结构在所述第一电极和所述第二电极之间均匀地延伸。
进一步地，所述光晶体管包括多个所述纳米结构，所述多个纳米结构并联在所述第一电极和所述第二电极之间，每个所述纳米结构的所述集电区皆与所述第一电极电连接，每个所述纳米结构的所述发射区皆与所述第二电极电连接。
进一步地，所述多个纳米结构在所述第一电极和所述第二电极之间均匀地延伸
进一步地，所述多个纳米结构彼此平行，任意两个相邻的所述纳米结构之间的间距为100nm-500nm，所述多个纳米结构的个数为2-50。
进一步地，所述第一PN结的结面积在10nm×10nm到5μm×5μm之间。
进一步地，所述第二PN结的结面积在10nm×10nm到5μm×5μm之间。
本发明所要解决的技术问题在第二个方面是提供一种光晶体管，通过设计纳米结构上的基区和集电区，将集电区作为主要的光吸收区，提高其光电转换效率。
为实现上述目的，所述光晶体管的所述基区的长度不大于所述集电区的长度。
进一步地，所述集电区的长度在0.5μm至2μm之间。
进一步地，所述基区的长度在30nm至500nm之间。
进一步地，所述光晶体管为PNP型或NPN型。
可选地，所述光晶体管为PNP型，所述集电区的材料为轻掺杂的P型的半导体材料，所述基区的材料为N型的所述半导体材料，所述发射区的材料为重掺杂 的P型的所述半导体材料。
进一步地，所述重掺杂的掺杂浓度为1018至1020cm-3，所述轻掺杂的掺杂浓度为1016至1010cm-3。
可选地，所述光晶体管为NPN型，所述集电区的材料为轻掺杂的N型的半导体材料，所述基区的材料为P型的所述半导体材料，所述发射区的材料为重掺杂的N型的所述半导体材料。
进一步地，所述重掺杂的掺杂浓度为1018至1020cm-3，所述轻掺杂的掺杂浓度为1016至1010cm-3。
进一步地，所述第一电极和所述第二电极由与所述发射区的所述半导体材料的掺杂浓度相同的所述半导体材料形成。
本发明所要解决的技术问题在第三个方面是提供一种光晶体管，通过在纳米结构的集电区和与其电连接的电极之间设置过渡区，降低接触电阻并抑制厄利效应(Early effect)。
为实现上述目的，所述光晶体管在所述纳米结构上还具有材料与所述第一电极的材料相同的过渡区，所述过渡区在所述集电区和所述第一电极之间，所述集电区通过所述过渡区与所述第一电极电连接。
进一步地，所述第一电极和所述第二电极的表面具有金属层，用于引出导线。
本发明所要解决的技术问题在第四个方面是提供一种光晶体管，通过钝化纳米结构的表面，降低其暗电流。
为实现上述目的，所述光晶体管的所述纳米结构的表面具有钝化层，所述钝化层的厚度为5至30nm。
可选地，所述纳米结构的材料是硅、锗、磷化铟或铟化砷镓。
进一步地，所述钝化层为氧化硅层、氮化硅层、氧化铝层或氧化铪层。
进一步地，本发明还提供了一种光晶体管的制备方法，用于制备上述的光晶体管，其特征在于，所述纳米结构的材料是单晶硅，所述制备方法包括步骤：
刻蚀SOI硅片的顶层硅层至埋层氧化硅层，在所述埋层氧化硅层上形成单晶硅的所述纳米结构；
对所述纳米结构掺杂，形成所述集电区、所述基区和所述发射区。
本发明所要解决的技术问题在第五个方面是提供一种光晶体管，通过在硅基的光晶体管的光吸收区的表面放置多个金属纳米颗粒，利用表面等离激元增强效应，使该光晶体管也适用于光通信波段的光。
为实现上述目的，所述光晶体管的所述集电区的表面上具有金属纳米颗粒，所述颗粒和所述集电区之间具有绝缘层。
进一步地，所述绝缘层的厚度为3至50nm，所述绝缘层的折射率为1.4至5。
进一步地，所述颗粒的粒径为10至200nm。
进一步地，所述颗粒的材料为金或银。
进一步地，所述颗粒呈周期性排布，所述颗粒的分布密度为2×109cm-2至1×1012cm-2。
可选地，所述绝缘层在所述颗粒的表面，所述集电区表面具有钝化层，所述钝化层的厚度为5-30nm。
可选地，所述绝缘层形成在所述集电区表面，并用于钝化所述集电区的表面。
进一步地，所述纳米结构的材料是单晶硅，所述绝缘层为氮化硅层、氧化铝层或氧化铪层。
进一步地，本发明还提供了一种光通信器件，其特征在于，包括上述的光晶体管，还包括光波导；所述光波导将光信号传送到所述光晶体管的所述集电区，所述光晶体管输出相应的电信号。
进一步地，所述光波导为光纤。
进一步地，所述光通信器件还包括天线，所述天线为一对锥形或方形的条状结构，沿垂直于所述纳米结构的延伸方向的方向，向所述纳米结构延伸，所述一对锥形或方形的条状结构的一对顶端分别在所述纳米结构两侧并指向所述纳米结构。
进一步地，所述一对顶端分别指向所述集电区。
进一步地，本发明还提供了一种光谱分光器件，用于确定照射到其受光面上的入射光中n个连续的波长λ1、λ2、…、λn的光各自的相对光功率P1、P2、…、Pn，包括如权利要求8-12、16-22和24中任何一个所述的光晶体管，其特征在于，m个所述光晶体管分布在所述受光面上，在所述入射光的照射下，所述m个光晶体管分别从其所述第一电极、所述第二电极输出光电流I1、I2、…、Im；所述m个光晶体管的所述纳米结构的厚度和/或宽度彼此不同；
所述入射光的相对光功率矩阵
Figure PCTCN2016073655-appb-000001
其中，已知所述m个光晶体管对所述n个连续的波长λ1、λ2、…、λn的光的光电响应矩阵
Figure PCTCN2016073655-appb-000002
其中已知第i个所述光晶体管对第j个波长λj的光的光电响应Mij；
其中，所述m不小于所述n，i＝1、…、m以及j＝1、…、n。
进一步地，通过实验测量所述第i个光晶体管对所述第j个波长λj的光的光电响应Mij；在所述实验中，用具有光功率P0和波长λj的均匀光束照射所述第i个光晶体管，测量其输出的光电流I0i，所述光电响应Mij＝I0i/P0。
进一步地，所述n个连续的波长λ1、λ2、…、λn的光各自具有延展的波长范围Δλ1、Δλ2、…、Δλn。
进一步地，各个所述波长范围Δλ1、Δλ2、…、Δλn彼此相等。
由此可见，本发明提供了一种光晶体管，通过将集电区、基区和发射区形成在呈条状的纳米结构上，将集电区、基区和发射区之间的PN结形成在纳米结构的横截面上，大大地减小了结电容，有效地提高了光晶体管的频响特性；本发明的光晶体管通过确认集电区为最有效的光吸收区域，合理设计基区和集电区的布局，即基区和集电区的长度，有效地提高了光晶体管的光电转换效率；本发明的光晶体管通过在纳米结构上引入集电区和电极之间的过渡区，有效地提高了集电区和电极的电连接并能抑制厄利效应；本发明的光晶体管通过确认纳米结构的表面复合速度对光晶体管的光电流的影响，在纳米结构的表面布置钝化层，有效地增加了光晶体管产生的光电流；对于硅基的本发明的光晶体管，通过在纳米结构表面，尤其是集电区的表面，布置多个金属纳米颗粒，有效地增强了其对光通信波段的光的吸收率；本发明相应地提供了制作上述的光晶体管的方法。另外，本发明提供了应用上述的光晶体管，尤其是带有金属纳米颗粒的硅基光晶体管的光通信器件，由于该硅基光晶体管制作较为方便且对光通信波段的光的吸收率也能具有很高的吸收率和光电转换效率，这一光通信器件具有很好的应用前景；并且，通过在该光通信器件上设置天线，还能进一步地提高其光吸收效率和光电转换效率。另外，本发明还提供了光晶体管的一种应用，即光谱分光器件，其具有受光面和布置在受光面上的多个具有不同结构参数的纳米结构的光晶体管，入射光照射到受光面上时，这些光晶体管分别输出各自的光电流。通过使用这些光晶体管，在已知它们对多个连续波长的光电响应的情况下，本发明的光谱分光器件能够获得该入射光中所含上述多个连续波长的光各自的相对光功率。因此，本发明的光谱分光器件能够对光束中所含波长及其组分(相对光功率)进行分析，在光学检测上有很好的应用前景。
以下将结合附图对本发明的构思、具体结构及产生的技术效果作进一步说明，以充分地了解本发明的目的、特征和效果。
附图说明
图1是现有技术的光晶体管(NPN型)的示意图。
图2是图1所示的光晶体管的剖面结构图。
图3是在一个较佳实施例中，本发明的光晶体管的上视示意图。
图4是图3所示的光晶体管的侧视示意图。
图5显示了图4所示的光晶体管的电极上具有金属层的结构。
图6示意性地描绘了本发明的光晶体管的两个PN结的形成位置。
图7显示了图4所示的光晶体管的集电区长度L1和基区长度L2。
图8是在第二个较佳实施例中，本发明的光晶体管的上视示意图。
图9是图8所示的光晶体管的侧视示意图。
图10显示了图8所示的光晶体管的制作流程。
图11是一个PNP型的图8所示的光晶体管的SEM照片。
图12是一个NPN型的图8所示的光晶体管的立体示意图。
图13显示了图8所示的光晶体管的各部分接受光照而产生的光电流-电压关系。
图14显示了图3所示的光晶体管的各部分接受光照而产生的光电流-电压关系。
图15显示了具有不同基区长度的图8所示的光晶体管的光电流-电压关系。
图16显示了具有不同基区长度的图8所示的光晶体管的暗电流-电压关系。
图17显示了具有不同表面复合速度的图8所示的光晶体管的光电流-电压关系。
图18显示了具有不同表面复合速度的图8所示的光晶体管的暗电流-电压关系。
图19显示了具有不同基区长度的NPN型的图8所示的光晶体管的频响特性。
图20是在第三个较佳实施例中，本发明的光晶体管的上视示意图。
图21是图20所示的光晶体管的侧视示意图。
图22是在一个较佳实施例中，本发明的光通信器件的上视示意图。
图23是图22所示的光通信器件的侧视示意图。
图24是在第二个较佳实施例中，本发明的光通信器件的侧视示意图。
图25是在第三个较佳实施例中，本发明的光通信器件的上视示意图，其中未显示光波导。
图26是图25所示的光通信器件的侧视示意图，其中显示了光波导。
图27是在第四个较佳实施例中，本发明的光通信器件的上视示意图。
图28显示了在一个示例中，本发明的光晶体管对波长范围在400nm-1200nm之间的光的吸收截面和相应的光电响应，该光晶体管的结构是NPN型或PNP型。
图29显示了在另一个示例中，本发明的光晶体管对波长范围在400nm-1200nm之间的光的吸收截面和相应的光电响应，该光晶体管的结构是NPN型或PNP型。
图30是在第五个较佳实施例中，本发明的光谱分光器件的结构示意图。
图31显示了在一个示例中，用于本发明的光谱分光器件的五个光晶体管对波长范围在400nm-1600nm之间的光的吸收率，这五个光晶体管的结构分别是NPN 型或PNP型。
具体实施方式
如图3-5所示，在第一个较佳的实施例中，本发明的光晶体管包括形成在呈条状的半导体材料的纳米结构上的集电区112、基区111和发射区113。该光晶体管可以是PNP型也可以是NPN型，即集电区112为纳米结构上的P型掺杂区域、基区111为纳米结构上的N型掺杂区域以及发射区113为纳米结构上的P型掺杂区域，或者集电区112为纳米结构上的N型掺杂区域、基区111为纳米结构上的P型掺杂区域以及发射区113为纳米结构上的N型掺杂区域。
集电区112、基区111和发射区113顺序地沿该纳米结构的延伸方向排列，如图3所示地为从右向左排列，并在它们之间的界面上形成两个PN结。根据形成纳米结构上的集电区112、基区111和发射区113的半导体材料是否相同，这两个PN结可以是同质结或异质结。较佳地，它们之间的界面是纳米结构的横截面，即垂直于该纳米结构的延伸方向的截面。优选地，PN结的结面积等于其所在的纳米结构的横截面的面积。即在集电区112、基区111和发射区113的纳米结构是被整体地掺杂来形成这三个区的，且这三个区的交界面皆垂直与该纳米结构的延伸方向。
参见图6，集电区112和基区111之间的第一PN结形成在纳米结构的横截面141上。由于该纳米结构至少在垂直于其延伸方向的两个互相垂直的方向之一上具有纳米尺度的尺寸，较佳地，其在上述两个方向上皆具有纳米尺度的尺寸，因此可知横截面141的面积是很小的，这样第一PN结的结面积很小，由此结电容很小。现有技术的光晶体管的基区-集电区之间的大的结电容对其性能所带来的不良影响将被消除。
类似地，发射区113和基区111之间的第二PN结形成在纳米结构的横截面142上。由于横截面142的面积很小，第二PN结的结面积很小，由此结电容很小。
较佳地，第一PN结的结面积在10nm×10nm到5μm×5μm之间，第二PN结的结面积在10nm×10nm到5μm×5μm之间。
本发明采用的纳米结构可以是纳米线、纳米棒、纳米柱或纳米带，等；它们可以是直的条状，或弯曲的条状；它们可以是均匀地沿其延伸方向延伸(即其各处的横截面皆相同)，也可以是不均匀地沿其延伸方向延伸(即其各处的横截面有差异)；对于均匀延伸的纳米结构，其横截面可以是多边形，例如四边形或三角形，也可以是圆形，或不规则图形；对于不均匀延伸的纳米结构，其各处的横截面可以变化形状。
集电区112和发射区113分别与第一电极121和第二电极122电连接，本实施例中，第一电极121和第二电极122也为掺杂的半导体材料，其分别地与集电区112和发射区113相接触由此实现电连接。较佳地，第一电极121和第二电极122 上具有金属层131和132，用于引出导线，例如，铝层。需要说明的是，第一电极和第二电极上的金属层并不是必须的，尤其在集成光学器件中。
如后文中将详述地，制作在纳米结构上的光晶体管，对于集电区吸收的光具有更高的光电转换效率。因此较佳地，光晶体管的基区111的长度L2不大于集电区112的长度L1。参见图7，这里的基区和集电区的长度是指该区对应的纳米结构的部分在纳米结构的延伸方向上的长度。优选地，集电区112的长度L1在0.5μm到2μm之间，基区111的长度L2在30nm到500nm之间。
较佳地，本实施例中集电区112、基区111、发射区113、第一电极121和第二电极122的掺杂情况为：集电区112为轻掺杂、基区111为掺杂、发射区113、第一电极121和第二电极122为重掺杂。具体地，对于PNP型的本发明的光晶体管，集电区112为P型轻掺杂，掺杂浓度为1016cm-3到1010cm-3；基区111为N型掺杂，掺杂浓度为1016cm-3至1018cm-3；发射区113为P型重掺杂，掺杂浓度为1018cm-3到1020cm-3；第一电极121和第二电极122与发射区113相同，为P型重掺杂，掺杂浓度为1018cm-3到1020cm-3。对于NPN型的本发明的光晶体管，集电区112为N型轻掺杂，掺杂浓度为1016cm-3到1010cm-3；基区111为P型掺杂，掺杂浓度为1016cm-3至1018cm-3；发射区113为N型重掺杂，掺杂浓度为1018cm-3到1020cm-3；第一电极121和第二电极122与发射区113相同，为N型重掺杂，掺杂浓度为1018cm-3到1020cm-3。
图8、9示出了第二个较佳的实施例中的本发明的光晶体管，由于之前的实施例中集电区112和与其相连的第一电极121具有不同的掺杂浓度，其接触处会发生由于不同掺杂浓度导致的接触问题，例如电阻较大，从而影响光晶体管的性能。因此在本实施例中，纳米结构上在集电区212和第一电极221之间存在一个过渡区214，过渡区214的掺杂与第一电极221相同。即，对于PNP型的本发明的光晶体管，过渡区214为P型重掺杂，掺杂浓度为1018cm-3到1020cm-3；对于NPN型的本发明的光晶体管，过渡区214为N型重掺杂，掺杂浓度为1018cm-3到1020cm-3。
并且通过布置该过渡区214，还能减轻、抑制厄利效应。
本实施例中的光晶体管的其他部分，例如基区211、发射区213和第二电极222皆与前一实施例中的相同，在此不赘述。
本发明的光晶体管的纳米结构的材料可以是诸如硅、锗、磷化铟或铟化砷镓等的半导体，较佳地为单晶硅。图10示出了制作材料为单晶硅的本实施例中的光晶体管的流程图，其中左栏显示的是制作光晶体管的侧视图，右栏是上视图。其主要具体地包括以下步骤：
1、根据设计的光晶体管的尺寸参数选用SOI硅片，主要是选择具有合适的顶层硅厚度的SOI硅片，例如具有10nm-200nm的顶层硅的SOI硅片，光晶体管将通过刻蚀顶层硅而被制作在埋层氧化硅之上。对硅片进行清 洗，较佳地应该去除顶层硅表面的自然氧化层。
2、对SOI硅片的顶层硅进行光刻，并继而进行刻蚀，以在埋层氧化硅上形成条状的单晶硅的纳米结构和其两端的用于形成第一、二电极的结构。刻蚀可以为干法刻蚀或湿法刻蚀，另外，根据需要的光晶体管的尺寸，还可以使用电子束直写替代光刻。
3、对前一步中在埋层氧化硅上形成的结构进行选区掺杂，可以使用离子注入或扩散的掺杂方式，在结构上形成光晶体管的集电区212、基区211、发射区213、过渡区214、第一电极221和第二电极222。在本步骤中，可以根据工艺条件设计注入的次序，在每一次注入时，通过一次或多次的光刻(或电子束直写)形成光刻胶掩膜的窗口用于离子注入；或者通过沉积金属层、氧化硅层或氮化硅层，并继而通过一次或多次的光刻(或电子束直写)以及刻蚀的步骤在金属层、氧化硅层或氮化硅层形成掩膜窗口，以用于离子注入。
需要说明的是，上述的步骤2和3可以互换，即先选区掺杂再刻蚀形成光晶体管的结构。最后，在第一电极221和第二电极222上形成用于引出导线的金属层，或者为了节省工艺步骤，可以先沉积金属层再进行掺杂，以利用该金属层作为离子注入时的掩膜。另外，还可以选用顶层硅掺杂浓度与光晶体管需要的集电区的掺杂浓度相同的SOI硅片，这样在后续的掺杂工艺中就可以省略对集电区的掺杂步骤。本领域的技术人员可以理解，使用SOI硅片，根据需要形成的光晶体管的结构来设计的工艺步骤可以有多种变化，本说明书在此描述的仅作为提供一种实现的可能，而非对其工艺流程的限制。
另外，前一个实施例的光晶体管也可以用类似的工艺流程制作，只要省略制作过渡区的步骤即可。
较佳地，还可以对完成掺杂的纳米结构进行表面钝化处理，以减小表面复合速度S，从而进一步地提高其形成的光晶体管的性能。本实施例中，采用在纳米结构的表面形成钝化层的方式进行钝化处理，对于单晶硅的纳米结构可以通过干法氧化在其表面形成5到30nm的氧化层，或者通过原子层沉积(ALD)或者化学气相沉积工艺在其表面沉积上述厚度的钝化层。在本发明的其他实施例中，还可以在纳米结构的表面，尤其是集电区的表面形成5到30nm的氮化硅层、氧化铝层或氧化铪层作为钝化层。
图11给出了应用如上的工艺流程制作的本实施例中的光晶体管的一个实例，其为PNP型，其中的纳米结构为长度为3至5μm，宽度为200nm、厚度为200nm的单晶硅纳米线。其中，集电区的长度为1μm，掺杂浓度为1×1015cm-3；基区的长度为100至500纳米，掺杂浓度为5×1017cm-3；发射区的长度为1μm，掺杂浓度为5×1019cm-3；过渡区的长度为1μm，掺杂浓度为5×1019cm-3；第一电极和第二 电极的掺杂浓度为5×1019cm-3。
图12给出了应用如上的工艺流程制作的本实施例中的光晶体管的一个立体示意图，其为NPN型。
下表给出了本发明制备的或模拟的具有类似于图11、12的结构的光晶体管。
Figure PCTCN2016073655-appb-000003
Figure PCTCN2016073655-appb-000004
图13-19示出了对上述不同结构参数的光晶体管的性能的模拟结果。其中，图13显示了PNP型光晶体管的各部分接受光照而产生的光电流-电压关系，图14显示了NPN型光晶体管的各部分接受光照而产生的光电流-电压关系，图中Ic为集电区光电流，Vc为集电区电压偏置；图15显示了具有不同基区长度的PNP型光晶体 管的光电流-电压关系，图中Iph’指光电流，VE为发射区电压偏置；图16显示了具有不同基区长度的PNP型光晶体管的暗电流-电压关系，图中Idark’指暗电流，VE为发射区电压偏置；图17显示了具有不同表面复合速度的PNP型光晶体管的光电流-电压关系；图18显示了具有不同表面复合速度的PNP型光晶体管的暗电流-电压关系；图19显示了具有不同基区长度的NPN型的光晶体管的频响特性。
从上述的模拟结果可以看出，PNP型或NPN型本发明的光晶体管的各部分在接收光子产生电信号的过程中其主要作用的是集电区，其光电转换效率比基区的大一个数量级还要多，即使考虑到样品中两者的受光面积差异，其也远大于基区。基区长度对光电流有影响，基区越长，光电流越小；基区长度对暗电流影响较小；表面符合速度S对光电流有影响，S越大，光电流越小；表面复合速度S也对暗电流有影响，S越长，暗电流越小。集电区长度对频响特性有影响，集电区越短，截止频率越高。
由于单晶硅材料对光通信波段的光的吸收效率低，其并不适合用作光通信器件。因此在本发明的第三个较佳的实施例中，如图20、21所示，在硅基的光晶体管300的光吸收区的表面，主要是集电区312的表面上放置多个金属纳米颗粒315，通过利用表面等离激元增强效应，使该光晶体管能增强吸收光通信波段的光。而对于其他对光通信波段的光的吸收效率不低的材料制作的光晶体管，也可以在其集电区表面放置多个金属纳米颗粒，以进一步地增加其对光通信波段的光的吸收效率。
金属纳米颗粒315可以是金纳米颗粒或银纳米颗粒，它们的粒径较佳地为10至200nm，均匀地或大致均匀地散布在集电区312的表面，较佳地其在集电区312的表面上为周期性排布，分布密度为2×109cm-2至1×1012cm-2。多个金属纳米颗粒315和集电区之间具有绝缘层316，较佳地绝缘层316的厚度为5至30nm。该绝缘层可以如图21所示地，分布在集电区312的表面，也可以分布在各个金属纳米颗粒315的表面。绝缘层的作用一方面是是保证各个金属纳米颗粒315以及集电区312之间的绝缘，另外更重要的是，其应该具有与各个金属纳米颗粒315以及集电区312的折射率相匹配的折射率，以保证各个金属纳米颗粒315激发的光波能低损耗地进入集电区312。较佳地，绝缘层316的折射率为1.4至5，对于硅基的光晶体管，较佳地采用氮化硅或氧化铪材料的绝缘层316。
对于绝缘层形成于金属纳米颗粒的表面的情况，可以在集电区的表面形成前述的钝化层，降低表面复合速率，提高光晶体管的性能。对于绝缘层形成于集电区的表面的情况，该绝缘层可以同时起到前述的钝化层的作用，因此不需要在集电区的表面上额外地形成钝化层了。
本实施例中的光晶体管的其他部分与之前的实施例相同，具有基区311、发射区313和过渡区314，电极未图示。在制作方法上，可以在制作完成前一实施例的光晶体管后，在集电区的表面上放置金属纳米颗粒。
图22、23示出了应用光晶体管300的光通信器件的一种结构，其包括光晶体管300和光纤10。光晶体管300的第一电极和第二电极上的金属层331、332引出导线361、362。光纤10在集电区312的上方横越集电区312，其中的光耦合进入集电区312。集电区312的表面上的金属纳米颗粒315通过表面等离激元增强效应，使光晶体管300增强吸收光通信波段的光，即提高耦合效率。需要说明的是，实际使用的光纤的尺寸一般远大于本发明的光晶体管，本说明书附图中绘制的光纤仅作为示意其与光晶体管的位置关系，而不表示两者的尺寸关系。另外，还可以使用其他光波导传输光并将光信号耦合进入光晶体管300中，例如平面介质光波导或条形介质光波导。
光纤10还可以在集电区312的上方沿集电区312延伸的方向延伸，如图24所示，同样光纤10中的光耦合进入集电区312。
在本发明的光通信器件的其他实施例中，还可以用其他的方式布置光纤，使光纤中的光直接耦合进入光晶体管的集电区；另外，还可以使用耦合器将光纤中的光耦合到光晶体管中。另外，还可以将本发明的光晶体管直接制作在光纤上。
图25、26示出了应用光晶体管300的第三种光通信器件的结构，其还包括天线，用于进一步地增强集电区312的光吸收效率。如图25所示，该天线为一对锥形的条状结构21、22，条状结构21、22沿垂直于该纳米结构的延伸方向的方向，向该纳米结构延伸，其一对顶端分别在该纳米结构两侧并指向该纳米结构，尤其是指向集电区312，各个顶端到集电区312的最近距离为50nm。该条状结构21、22的材料为单晶硅，可以在SOI硅片上刻蚀形成该纳米结构的同时形成。另外，也可以采用矩形的条状结构，或其他形状的条状结构。本实施例中的光通信器件采用条形介质光波导11，其具有方形的横截面。光波导11与光晶体管300的相对位置关系与第一种结构的光通信器件(图22、23)相同，为了显示清楚条状结构21、22，图25中未示出光波导11。同样地，光波导11还可以按其他的方式布置，例如图24示出的方式，使光纤中的光直接耦合进入光晶体管的集电区；另外，还可以使用耦合器将光纤中的光耦合到光晶体管中。另外，还可以将光晶体管和一对条状结构直接制作在光纤上。
由于实际使用中，单个纳米结构形成的本发明的光晶体管的光吸收效率较低，较佳地，本发明的光晶体管包括多个如前所述的纳米结构，每个纳米结构上包括集电区、基区和发射区，优选地还包括过渡区、钝化层和金属纳米颗粒。这些纳米结构并联在第一电极和第二电极之间，每个纳米结构的集电区皆与第一电极电连接(两者直接相连或通过过渡区相连)，每个纳米结构的发射区皆与第二电极电连接。较佳地，这些纳米结构在第一电极和第二电极之间均匀地延伸，彼此平行。较佳地，任意两个相邻的纳米结构之间的间距为100nm-500nm，这些纳米结构的个数为2-50。
图27示出了应用上述光晶体管的光通信器件的一个实例，如光晶体管300的纳米结构的n个纳米结构401、402、…、40n并联在第一电极431和第二电极432之间，形成光晶体管400。光纤10横越过这n个纳米结构301、302、…、30n的集电区，将光信号耦合进入这n个集电区。
如前面各个实施例中所描述的各种结构的光晶体管在被光照射后产生光电流，将光电流从第一、二电极引出后还可以用于检测，这是由于不同结构参数(如其纳米机构宽度、宽度等)的光晶体管对不同波长的光的吸收能力不同，而产生的光电流的大小与该吸收能力相关，一般吸收能力越大，产生的光电流越大。这个吸收能力可以用吸收截面、吸收率等参数描述，光晶体管产生的光电流与其对入射光的吸收截面或吸收率近似地成正比。
在图28、29示出的两个示例中，用Lumerical仿真软件的FDTD模块模拟了两个结构如图11、12所示的光晶体管对波长范围在400nm-1200nm之间的光的吸收截面，并用Lumerical仿真软件的DEVICE模块模拟了它们相应的光电响应。其中，图28的示例中的光晶体管的结构是横截面积100nm×100nm，总长3μm，基区长度100nm，发射区1μm，集电区1μm，过渡区900nm；图29的示例中的光晶体管的结构是纳米线厚度200nm、宽度240nm、总长3μm、基区长度40nm、发射区1μm、集电区1μm、过度区960nm。
从图28可以看出，这个具有厚度为100nm的纳米结构的光晶体管对不同波长的光具有不同的吸收截面，其在400nm-1200nm之间具有两个吸收峰，分别是在420nm和600nm处。相应地，当被这两个波长的光照射时，其将产生较大的光电流。如图中所示地，对于波长为420nm的入射光，该光晶体管的光电响应约为40A/W，即其当被光功率为1W、波长为420nm的入射光照射时，其产生的光电流为40A。类似地可知，对于波长为600nm的入射光，该光晶体管的光电响应约为10A/W。另外，从图中可见，光电响应与吸收截面近似地成正比，即光晶体管产生的光电流与其对入射光的吸收截面近似地成正比。
同样地，从图29可以看出，这个具有厚度为200nm的纳米结构的光晶体管对不同波长的光具有不同的吸收截面，其在600nm-1200nm之间具有两个吸收峰，分别是在600nm和680nm处。相应地，当被这两个波长的光照射时，其将产生较大的光电流。如图中所示地，对于波长为600nm的入射光，该光晶体管的光电响应约为300A/W，对于波长为680nm的入射光，该光晶体管的光电响应约为250A/W。
由于具有不同结构参数，例如具有不同厚度，的纳米结构的多个光晶体管对各个波长的吸收截面不同，光电响应也不同，可以据此设计一种光谱分光器件，来分析入射光中所包含的光的波长，以及获取各个波长的光的光功率在整个入射光的光功率中所占的份额，或者各个波长的光的相对光功率。因此，在本发明的第五个较佳实施例中，提供了这样一种光谱分光器件，其具有受光面，具有不同结构参数的 纳米结构的多个光晶体管分布在该受光面上。当待检测的光照射到该受光面上，这多个光晶体管将分别地输出其光电流。
图30描绘了使用四个光晶体管的示例，具体地，该光谱分光器件包括衬底和分布在衬底的上表面的四个光晶体管51、52、53和54，该衬底的上表面作为受光面。待检测的光从上向下照射到受光面上，部分地被四个光晶体管51、52、53和54吸收，四个光晶体管51、52、53和54于是从其第一、第二电极输出各自的光电流I1、I2、I3和I4以供分析。确切地说，光电流I1、I2、I3和I4分别地从四个光晶体管51、52、53和54的第一电极流出，并流入第二电极；或者光电流I1、I2、I3和I4分别地从四个光晶体管51、52、53和54的第二电极流出，并流入第一电极。
以下具体地说明应用上述的光谱分光器件分析入射光所包含的光的波长及其相对功率的分析方法，其中，设光谱分光器件使用了m个光晶体管。
首先，预先获取m个光晶体管对n个连续的波长λ1、λ2、…、λn的光的光电响应。这可以通过实验测量或者软件模拟的方法得到，为了获得较佳的实用性，应该通过实验测量。具体地如，通过使用一确定光功率P0的波长为第j个波长λj的均匀光束照射第i个光晶体管，测量其输出的光电流I0i，可以获得该第i个光晶体管对第j个波长λj的光的光电响应Mij＝I0i/P0，遍历i＝1、…、m以及j＝1、…、n，可以获得m个光晶体管对n个波长λ1、λ2、…、λn的光的光电响应矩阵：
Figure PCTCN2016073655-appb-000005
然后，获取待检测的均匀入射光照射到这m个光晶体管后，这m个光晶体管输出的光电流矩阵：
Figure PCTCN2016073655-appb-000006
然后，计算入射光的相对光功率矩阵：
Figure PCTCN2016073655-appb-000007
其中，n个波长λ1、λ2、…、λn的光的相对光功率分别为P1、P2、…、Pn。I＝MP，由此P＝M-1I。
因此可见，为了能够根据以上的公式求解得到n个波长的光的相对光功率，本 发明的光谱分光器件使用的光晶体管的个数m应该不小于波长的个数n；并且，使用的光晶体管中，应该没有两个以上的光晶体管对这n个波长的光具有相同的光电响应。
需要说明的是，实际使用中的n个连续的波长λ1、λ2、…、λn的光并不是波长恰好为λ1、λ2、…、λn的光，而是在该波长λ处延展一定波长范围Δλ的光，并且通过该延展的波长范围Δλ其与其两个相邻的波长的光相接，该波长范围Δλ可以是从该波长λ处向λ增加的方向延展，也可以是从该波长λ处向λ减小的方向延展，还可以是从该波长λ处分别向λ增加和减小的方向延展。例如，λ1+Δλ＝λ2，λ2+Δλ＝λ3，等等。即，λl-1+Δλ＝λl，λl+Δλ＝λl+1，其中l＝2、3、…、n-1。并且其中，对于波长范围Δλ从该波长λ处向λ增加的方向延展的情况，Δλ取作正值；对于波长范围Δλ从该波长λ处向λ减小的方向延展的情况，Δλ取作负值；对于波长范围Δλ部分地从该波长λ处向λ增加的方向延展，部分地从该波长λ处向λ减小的方向延展的情况，将Δλ分别取作正值(对应其向λ增加的方向延展的最大值)和负值(对应其向λ减少的方向延展的最大值)。
例如，对于10个波长分别为500nm、510nm、…、590nm的光，波长范围Δλ＝10nm，其中波长为500nm的光指的是波长范围从500nm-510nm的光，波长为510nm的光指的是波长范围从510nm-520nm的光，…，波长为590nm的光指的是波长范围从590nm-600nm的光；或者，其中波长为500nm的光指的是波长范围从490nm-510nm的光，波长为510nm的光指的是波长范围从500nm-510nm的光，…，波长为590nm的光指的是波长范围从580nm-590nm的光；或者，其中波长为500nm的光指的是波长范围从495nm-505nm的光，波长为510nm的光指的是波长范围从505nm-515nm的光，…，波长为590nm的光指的是波长范围从585nm-595nm的光；等等。
使用类似图28、29给出的光晶体管的光电响应曲线，对第i个光晶体管在波长范围[λ1,λn]上模拟获取其对上述n个波长λ1、λ2、…、λn的光的光电响应时，在波长为λj处的光电响应值Mij应该取作在波长范围Δλ内的光电响应对波长的积分，即该光电响应曲线在波长范围Δλ内的部分以下的面积。这是因为，该光晶体管输出的光电流是其对应各波长的光电流部分在波长范围[λ1,λn]上累积的结果，而其对应第j个波长的光电流部分是在波长范围Δλ上累积的结果。
上述的根据实验测量获得m个光晶体管对n个波长λ1、λ2、…、λn的光的光电响应矩阵，再根据该光电响应矩阵计算n个波长λ1、λ2、…、λn的光的相对光功率的方法能够获得最为精确的结果。但是，对于测量光电响应不便、模拟光电响应不便的场合，还可以通过测量或模拟这m个光晶体管对n个波长λ1、λ2、…、λn的光的吸收截面的方法来处理，这是由于如前所述的一个光晶体管对n个波长λ1、λ2、…、λn的光的光电响应与其对这n个波长λ1、λ2、…、λn的光的吸收截面近似 地成正比。例如，对于第i个光晶体管，其对第j个波长λj的光的吸收截面σij＝aiMij。这样，只要再获取各个光晶体管的系数ai(i＝1、2、…、m)，也能够从吸收截面σij近似地获得光电响应Mij。
另外，还可以使用吸收率替代上面描述的吸收截面。如图31示出了分别具有厚度分别为100nm、140nm、180nm、220nm和260nm的纳米结构的5个光晶体管在波长范围为400nm-1600nm内的吸收率曲线，其中，厚度为100nm的纳米结构的光晶体管的吸收率曲线以曲线T100表示，厚度为140nm的纳米结构的光晶体管的吸收率曲线以曲线T140表示，厚度为180nm的纳米结构的光晶体管的吸收率曲线以曲线T180表示，厚度为220nm的纳米结构的光晶体管的吸收率曲线以曲线T220表示，厚度为260nm的纳米结构的光晶体管的吸收率曲线以曲线T260表示。使用光晶体管的吸收率曲线获得其对n个波长λ1、λ2、…、λn的光的光电响应的方法与上述的使用吸收截面曲线是类似的，即对第i个光晶体管在波长范围[λ1,λn]的模拟其对波长λ的光的吸收率时，在波长为λ处的吸收率值应该取作在波长范围Δλ内的吸收率对波长的积分，即该吸收率曲线在波长范围Δλ内的部分以下的面积，如图31中阴影部分表示的。由于一个光晶体管对n个波长λ1、λ2、…、λn的光的光电响应与其对这n个波长λ1、λ2、…、λn的光的吸收率近似地成正比，再获取这个比例系数后，就能够从吸收率近似地获得光电响应了。
另外，需要说明的是，以上描述中将n个波长λ1、λ2、…、λn的光的延展的波长范围Δλ设定为相等的值，但在其他实施例中，还可以根据需要将n个波长λ1、λ2、…、λn的光的延展的波长范围设定为不相等的值，如波长λi的光的延展的波长范围为Δλi，只要满足该波长λi的光通过该延展的波长范围Δλi其与其两个相邻的波长的光相接即可。即，λl-1+Δλl-1＝λl，λl+Δλl＝λl+1，其中l＝2、3、…、n-1。
以上详细描述了本发明的较佳具体实施例。应当理解，本领域的普通技术人员无需创造性劳动就可以根据本发明的构思做出诸多修改和变化。因此，凡本技术领域的技术人员依本发明的构思在现有技术的基础上通过逻辑分析、推理或者有限的实验可以得到的技术方案，皆应在由权利要求书所确定的保护范围内。

Claims (44)

  1. 一种光晶体管，包括集电区、基区和发射区，所述集电区和所述基区之间具有第一PN结，所述发射区和所述基区之间具有第二PN结，其特征在于，所述集电区、所述基区和所述发射区形成在呈条状的纳米结构上，所述第一PN结形成在所述纳米结构的第一横截面上；所述第一PN结和所述第二PN结为同质结或异质结。
  2. 如权利要求1所述的光晶体管，其中所述第一PN结的结面积等于所述第一横截面的面积。
  3. 如权利要求2所述的光晶体管，其中所述纳米结构为纳米线、纳米棒、纳米柱或纳米带。
  4. 如权利要求2所述的光晶体管，其中所述第二PN结形成在所述纳米结构的第二横截面上，所述第二PN结的结面积等于所述第二横截面的面积。
  5. 如权利要求4所述的光晶体管，其中在所述纳米结构上，所述基区在所述第一横截面和所述第二横截面之间，所述集电区在所述第一横截面远离所述第二横截面的一侧，所述发射区在所述第二横截面远离所述第一横截面的一侧。
  6. 如权利要求5所述的光晶体管，其中所述纳米结构为直的条状或弯曲的条状。
  7. 如权利要求5所述的光晶体管，其中所述第一横截面和所述第二横截面为四边形、三角形或圆形。
  8. 如权利要求5所述的光晶体管，其中还包括与所述集电区电连接的第一电极和与所述发射区电连接的第二电极。
  9. 如权利要求8所述的光晶体管，其中所述纳米结构在所述第一电极和所述第二电极之间均匀地延伸。
  10. 如权利要求8所述的光晶体管，其中包括多个所述纳米结构，所述多个纳米结构并联在所述第一电极和所述第二电极之间，每个所述纳米结构的所述集电区皆与所述第一电极电连接，每个所述纳米结构的所述发射区皆与所述第二电极电连接。
  11. 如权利要求10所述的光晶体管，其中所述多个纳米结构在所述第一电极和所述第二电极之间均匀地延伸。
  12. 如权利要求11所述的光晶体管，其中所述多个纳米结构彼此平行，任意两个相邻的所述纳米结构之间的间距为100nm-500nm，所述多个纳米结构的个数为2-50。
  13. 如权利要求9或11所述的光晶体管，其中所述第一PN结的结面积在10nm×10nm到5μm×5μm之间。
  14. 如权利要求9或11所述的光晶体管，其中所述第二PN结的结面积在10nm×10nm到5μm×5μm之间。
  15. 如权利要求9或11所述的光晶体管，其中所述基区的长度不大于所述集电区的长度。
  16. 如权利要求15所述的光晶体管，其中所述集电区的长度在0.5μm至2μm之间。
  17. 如权利要求15所述的光晶体管，其中所述基区的长度在30nm至500nm之间。
  18. 如权利要求15所述的光晶体管，其中所述光晶体管为PNP型或NPN型。
  19. 如权利要求18所述的光晶体管，其中所述光晶体管为PNP型，所述集电区由轻掺杂的P型的半导体材料形成，所述基区由N型的所述半导体材料形成，所述发射区由重掺杂的P型的所述半导体材料形成。
  20. 如权利要求19所述的光晶体管，其中所述重掺杂的掺杂浓度为1018至1020cm-3，所述轻掺杂的掺杂浓度为1016至1010cm-3。
  21. 如权利要求19所述的光晶体管，其中所述光晶体管为NPN型，所述集电区由轻掺杂的N型的半导体材料形成，所述基区由P型的所述半导体材料形成，所述发射区由重掺杂的N型的所述半导体材料形成。
  22. 如权利要求21所述的光晶体管，其中所述重掺杂的掺杂浓度为1018至1020cm-3，所述轻掺杂的掺杂浓度为1016至1010cm-3。
  23. 如权利要求19-22中任何一个所述的光晶体管，其中所述第一电极和所述第二电极由与所述发射区的所述半导体材料的掺杂浓度相同的所述半导体材料形成。
  24. 如权利要求23所述的光晶体管，其中在所述纳米结构上还具有材料和掺杂浓度与所述第一电极的材料相同的过渡区，所述过渡区在所述集电区和所述第一电极之间，所述集电区通过所述过渡区与所述第一电极电连接。
  25. 如权利要求1-12、16-22和24中任何一个所述的光晶体管，其中所述纳米结构的表面具有钝化层，所述钝化层的厚度为5至30nm。
  26. 如权利要求1-12、16-22和24中任何一个所述的光晶体管，其中所述纳米结构的材料是硅、锗、磷化铟或铟化砷镓。
  27. 如权利要求26所述的光晶体管，其中所述钝化层为氧化硅层、氮化硅、氧化铝层或氧化铪层。
  28. 一种光晶体管的制备方法，用于制备如权利要求23所述的光晶体管，其特征在于，所述纳米结构的材料是单晶硅，所述制备方法包括步骤：
    刻蚀SOI硅片的顶层硅层至埋层氧化硅层，在所述埋层氧化硅层上形成单晶硅的所述纳米结构；
    对所述纳米结构掺杂，形成所述集电区、所述基区和所述发射区。
  29. 如权利要求1-12、16-22和24中任何一个所述的光晶体管，其中所述集电区的表面上具有金属纳米颗粒，所述颗粒和所述集电区之间具有绝缘层。
  30. 如权利要求29所述的光晶体管，其中所述绝缘层的厚度为3至50nm，所述绝缘层的折射率为1.4至5。
  31. 如权利要求30所述的光晶体管，其中所述颗粒的粒径为10至200nm。
  32. 如权利要求30所述的光晶体管，其中所述颗粒的材料为金或银。
  33. 如权利要求30所述的光晶体管，其中所述颗粒呈周期性排布，所述颗粒的分布密度为2×109cm-2至1×1012cm-2。
  34. 如权利要求30-33中任何一个所述的光晶体管，其中所述绝缘层在所述颗粒的表面，所述集电区表面具有钝化层，所述钝化层的厚度为5至30nm。
  35. 如权利要求30-33中任何一个所述的光晶体管，其中所述绝缘层形成在所述集电区表面，并用于钝化所述集电区的表面。
  36. 如权利要求35所述的光晶体管，其中所述纳米结构的材料是单晶硅，所述绝缘层为氮化硅层、氧化铝层或氧化铪层。
  37. 一种光通信器件，包括如权利要求1-12、16-22、24、27、30-33和36中任何一个所述的光晶体管，其特征在于，还包括光波导；所述光波导将光信号传送到所述光晶体管的所述集电区，所述光晶体管输出相应的电信号。
  38. 如权利要求37所述的光通信器件，其中所述光波导为光纤。
  39. 如权利要求37所述的光通信器件，其中还包括天线，所述天线为一对锥形或方形的条状结构，沿垂直于所述纳米结构的延伸方向的方向，向所述纳米结构延伸，所述一对锥形或方形的条状结构的一对顶端分别在所述纳米结构两侧并指向所述纳米结构。
  40. 如权利要求39所述的光通信器件，其中所述一对顶端分别指向所述集电区。
  41. 一种光谱分光器件，用于确定照射到其受光面上的入射光中n个连续的波长λ1、λ2、…、λn的光各自的相对光功率P1、P2、…、Pn，包括如权利要求8-12、16-22和24中任何一个所述的光晶体管，其特征在于，m个所述光晶体管分布在所述受光面上，在所述入射光的照射下，所述m个光晶体管分别从其所述第一电极、所述第二电极输出光电流I1、I2、…、Im；所述m个光晶体管的所述纳米结构的厚度和/或宽度彼此不同；
    所述入射光的相对光功率矩阵
    Figure PCTCN2016073655-appb-100001
    其中，已知所述m个光晶体管对所述n个连续的波长λ1、λ2、…、λn的光的光电响应矩阵
    Figure PCTCN2016073655-appb-100002
    其中已知第i个所述光晶体管对第j个波长λj的光的光电响应Mij；
    其中，所述m不小于所述n，i＝1、…、m以及j＝1、…、n。
  42. 如权利要求41所述的光谱分光器件，其中通过实验测量所述第i个光晶体管对所述第j个波长λj的光的光电响应Mij；在所述实验中，用具有光功率P0和波长λj的均匀光束照射所述第i个光晶体管，测量其输出的光电流I0i，所述光电响应Mij＝I0i/P0。
  43. 如权利要求41或42所述的光谱分光器件，其中所述n个连续的波长λ1、λ2、…、λn的光各自具有延展的波长范围Δλ1、Δλ2、…、Δλn。
  44. 如权利要求43所述的光谱分光器件，其中各个所述波长范围Δλ1、Δλ2、…、Δλn彼此相等。
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