CN110890444A - 一种GaN紫外探测器及其制备方法 - Google Patents

一种GaN紫外探测器及其制备方法 Download PDF

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CN110890444A
CN110890444A CN201911111605.7A CN201911111605A CN110890444A CN 110890444 A CN110890444 A CN 110890444A CN 201911111605 A CN201911111605 A CN 201911111605A CN 110890444 A CN110890444 A CN 110890444A
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金鑫
汤乃云
叶怀宇
张国旗
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Shenzhen Third Generation Semiconductor Research Institute
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    • H01L31/03048—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP comprising a nitride compounds, e.g. InGaN
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    • H01L31/1856—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising nitride compounds, e.g. GaN

Abstract

本发明提供一种GaN紫外探测器及其制备方法，该探测器是具有高抗反射结构的新型紫外探测器，能够实现快速、高灵敏度的紫外光探测；其倒梯形的凹槽有助于入射光在内部多次被吸收，抑制探测器的高表面反射，增强探测器的光吸收，提高探测器的量子效率、光响应率等性能；此外，Ga2O3纳米线作为抗反射层和紫外敏感材料，能够进一步提高探测器的光电性能。

Description

一种GaN紫外探测器及其制备方法
技术领域
本发明涉及紫外探测领域，具体为一种GaN紫外探测器及其制备方法。
背景技术
作为第三代半导体之一，GaN因为其独特的光电子特性(3.4eV禁带宽度)，被公认为紫外探测器的核心材料，非常适用于高度集成紫外光电子器件。但是对于传统的GaN紫外探测器来说，其通常是在平面衬底之上制备而成，而平面结构的探测器具有很高的表面反射效率，会导致探测器的光子吸收效率、光探测率以及响应率等性能会受到影响。近些年来，表面修正技术被越来越多的使用于有效地减少表面反射和增强光子的吸收效率方面，尤其是对GaN、AlGaN等外延材料的器件。在诸多表面修正技术中，自上而下的基底微加工技术、自下而上的合成纳米材料(纳米结构和薄膜材料)技术以及二者的结合被认为是最有效的方法和技术路径。利用半导体PN结光伏效应制成的器件称为光伏探测器，也称结型光电器件。这类器件品种很多，其中包括：光电池、光电二极管、光电晶体管、光电场效应管、PIN管、雪崩光电二极管、光可控硅、阵列式光电器件、象限式光电器件、位置敏感探测器(PSD)、光电耦合器件等。
目前大多数紫外探测器的光电响应在准确性和灵敏度方面有待进一步提高，同时由于不可避免的表面反射，导致入射光子在探测器中的吸收效率也未能达到理论值，因此紫外探测器在量子效率、光响应率等光电性能是目前研究人员急需要解决的问题之一。
发明内容
基于上述所提到的问题，依赖先进的微纳加工技术在传统的GaN紫外探测器上进行表面改进，以提高GaN探测器的光子吸收效率、探测率和光电响应率等性能。本发明创新性的提出了一种具有高抗反射结构的GaN紫外探测器的制备方法，不仅能够降低探测器表面对光子的反射效率，而且能够将入射光子局域在器件内部实现极高的光子吸收率和探测效率。一种GaN紫外探测器的制备具体方法包括以下步骤：
1)衬底上依次生长GaN缓冲层和n型GaN层；
2)选择性刻蚀n型GaN层，形成倒梯形凹槽；
3)在凹槽内依次外延生长本征GaN层和p型AlGaN层；
4)p型AlGaN层上生长一层Ga2O3纳米线使得入射探测器的紫外光子只进不出，抑制表面反射；
5)在纳米线上淀积一层ITO透明电极；
6)在凹槽外n型GaN层之上沉积一个金属电极；
外延的GaN/AlGaN之上合成Ga2O3纳米线，纳米线材料本身具有很强的降低表面光反射效率的作用，
采用自上而下的基底微加工技术能够在外延材料上制备一些局域光束的凹槽结构。纳米线材料本身具有很强的降低表面光反射效率的作用，所以集成纳米材料的凹槽结构就像一个“黑洞”一样，使得入射探测器的紫外光子只进不出，极大地抑制表面反射，并能够将GaN探测器的光子吸收效率、探测率、响应率等光电性能提高到新的水平和高度。
优选地，其特征在于：所述1)中的GaN缓冲层厚度为0.2μm～5μm；所述n型GaN层厚度为0.5μm～4μm，掺杂浓度为1×1018cm-3～5×1018cm-3，掺杂元素为硅。
优选地，其特征在于：所述2)中的倒梯形凹槽，凹槽的深度为0.2μm～3.5μm，并且不大于n型GaN层的厚度。
使用的微型倒梯形凹槽结构，当紫外光束照射在凹槽结构内部后，光束会在内部的界面发生多次反射，最终入射光子会被内部的材料所吸收殆尽，极少有光子反射出凹槽结构。
优选地，其特征在于：所述3)中的本征GaN层厚度为0.1μm～2.0μm；p型掺杂AlGaN层厚度为0.1μm～1.0μm，掺杂浓度为1×1018cm-3～5×1018cm-3，掺杂元素为镁。
优选地，其特征在于：所述4)中的Ga2O3纳米线为高密度的纳米线，其生长方向垂直于p型掺杂AlGaN层，其长度为20nm～100nm。
优选地，其特征在于：所述5)中的ITO透明电极厚度为100nm～500nm。
由上述方法制得的GaN紫外探测器，该紫外探测器在结构上是一种PIN光伏探测器。
采用上述技术方案本发明的优点至少在于：
A.受益于凹槽结构和纳米材料的作用，本发明的探测器具有极低的表面发射率和极高的光子吸收率。
B.本发明的紫外探测器在结构上是一种PIN光伏探测器，因此具有快速、准确、高灵敏的光电响应特性。
C.本发明的紫外探测器具有极高的量子效率、光响应率等光电性能。
D.本发明的紫外探测器是一种具有高抗反射结构的GaN紫外探测器。
附图说明
图1为本发明的光入射凹槽结构示意图；
图2为本发明的二维剖面结构示意图；
图3为本发明实施例1的制备工艺流程图；
图4为本发明实施例2的制备工艺流程图；
图5为本发明实施例3的制备工艺流程图。
图2中，蓝宝石衬底1，GaN缓冲层2，n型掺杂GaN层3，本征掺杂的GaN层4，p型掺杂AlGaN层5，Ga2O3纳米线6，ITO透明电极7，金属电极8。
具体实施方式
下面将结合附图对本发明的技术方案进行清楚、完整地描述，显然，所描述的实施例是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
如图1所示为本发明所使用的微型倒梯形凹槽结构，当紫外光束照射在凹槽结构内部后，光束会在内部的界面发生多次反射，最终入射光子会被内部的材料所吸收殆尽，极少有光子反射出凹槽结构。此外，在本发明中也采用了自下而上合成纳米材料技术，在外延的GaN/AlGaN之上合成Ga2O3纳米线，纳米线材料本身具有很强的降低表面光反射效率的作用，所以集成纳米材料的凹槽结构就像一个“黑洞”一样，使得入射探测器的紫外光子只进不出，极大地抑制表面反射，并能够将GaN探测器的光子吸收效率、探测率、响应率等光电性能提高到新的水平和高度。
本实施例提供一种具有高抗反射能力的GaN紫外探测器的制备方法，器件的剖面如图2所示，它由蓝宝石衬底1，GaN缓冲层2，n型掺杂GaN层3，本征掺杂的GaN层4，p型掺杂AlGaN层5，Ga2O3纳米线6，ITO透明电极7和金属电极8组成。
实施例1
作为一个优选方案具体制备工艺流程如图3所示，包括：
1)取样蓝宝石衬底，并用浓磷酸溶液对其表面进行预处理。
2)在蓝宝石衬底之上依次外延生长2μm GaN缓冲层2、2μm掺杂浓度为1×1018cm-3的n型GaN层3。
3)使用感应耦合等离子体(ICP)刻蚀设备，结合刻蚀掩膜，选择性刻蚀n型GaN层3，形成倒梯形凹槽，凹槽的深度1.5μm。
4)利用外延材料生长设备，在洁净的倒梯形凹槽内依次生长0.5μm本征GaN层4和0.2μm掺杂浓度为1×1018cm-3的p型AlGaN层5。刻蚀台阶和台面上。
5)在凹槽内的p型AlGaN层5之上，生长20nm高的Ga2O3纳米线6。
6)在Ga2O3纳米线6上制备100nm厚ITO透明电极。
7)利用光刻、金属蒸镀技术，在凹槽外n型GaN上淀积金属电极8，并形成良好的欧姆接触。
实施例2
作为一个优选方案具体制备工艺流程如图4所示，包括：
1)取样蓝宝石衬底，并用浓磷酸溶液对其表面进行预处理。
2)在蓝宝石衬底之上依次外延生长3μm GaN缓冲层2、3μm掺杂浓度为1×1018cm-3的n型GaN层3。
3)使用感应耦合等离子体(ICP)刻蚀设备，结合刻蚀掩膜，选择性刻蚀n型GaN层3，形成倒梯形凹槽，凹槽的深度2.5μm。
4)利用外延材料生长设备，在洁净的倒梯形凹槽内依次生长1.0μm本征GaN层4和0.25μm掺杂浓度为1×1018cm-3的p型AlGaN层5。刻蚀台阶和台面上。
5)在凹槽内的p型AlGaN层5之上，生长100nm高的Ga2O3纳米线6。
6)在Ga2O3纳米线6上制备250nm厚ITO透明电极。
7)利用光刻、金属蒸镀技术，在凹槽外n型GaN上淀积金属电极8，并形成良好的欧姆接触。
实施例3
作为一个优选方案具体制备工艺流程如图5所示，包括：
1)取样蓝宝石衬底，并用浓磷酸溶液对其表面进行预处理。
2)在蓝宝石衬底之上依次外延生长4μm GaN缓冲层2、4μm掺杂浓度为1×1018cm-3的n型GaN层3。
3)使用感应耦合等离子体(ICP)刻蚀设备，结合刻蚀掩膜，选择性刻蚀n型GaN层3，形成倒梯形凹槽，凹槽的深度3.5μm。
4)利用外延材料生长设备，在洁净的倒梯形凹槽内依次生长1.5μm本征GaN层4和0.5μm掺杂浓度为1×1018cm-3的p型AlGaN层5。刻蚀台阶和台面上。
5)在凹槽内的p型AlGaN层5之上，生长150nm高的Ga2O3纳米线6。
6)在Ga2O3纳米线6上制备500nm厚ITO透明电极。
7)利用光刻、金属蒸镀技术，在凹槽外n型GaN上淀积金属电极8，并形成良好的欧姆接触。
最后说明的是，以上优选实施例仅用以说明本发明的技术方案而非限制，尽管通过上述优选实施例已经对本发明进行了详细的描述，但本领域技术人员应当理解，可以在形式上和细节上对其作出各种各样的改变，而不偏离本发明权利要求书所限定的范围。

Claims (8)

1.一种GaN紫外探测器的制备方法，其特征在于：包括：
1)衬底上依次生长GaN缓冲层和n型GaN层；
2)选择性刻蚀n型GaN层，形成倒梯形凹槽；
3)在凹槽内依次外延生长本征GaN层和p型AlGaN层；
4)p型AlGaN层上生长一层Ga2O3纳米线，使得入射探测器的紫外光子只进不出，抑制表面反射；
5)在纳米线上淀积一层ITO透明电极；
6)在凹槽外n型GaN层之上沉积一个金属电极。
2.根据权利要求1所述的GaN紫外探测器的制备方法，其特征在于：所述1)中的GaN缓冲层厚度为0.2μm～5μm；所述n型GaN层厚度为0.5μm～4μm，掺杂浓度为1×1018cm-3～5×1018cm-3，掺杂元素为硅。
3.根据权利要求1所述的GaN紫外探测器的制备方法，其特征在于：所述2)中的倒梯形凹槽，凹槽的深度为0.2μm～3.5μm，并且不大于n型GaN层的厚度。
4.根据权利要求1所述的GaN紫外探测器的制备方法，其特征在于：所述3)中的本征GaN层厚度为0.1μm～2.0μm；p型掺杂AlGaN层厚度为0.1μm～1.0μm，掺杂浓度为1×1018cm-3～5×1018cm-3，掺杂元素为镁。
5.根据权利要求1所述的GaN紫外探测器的制备方法，其特征在于：所述4)中的Ga2O3纳米线为高密度纳米线，其生长方向垂直于p型掺杂AlGaN层，其长度为20nm～100nm。
6.根据权利要求1所述的GaN紫外探测器的制备方法，其特征在于：所述5)中的ITO透明电极厚度为100nm～500nm。
7.根据权利要求1-6所述任一方法制得的GaN紫外探测器。
8.如权利要求7所述的GaN紫外探测器，其特征在于，该紫外探测器在结构上是一种PIN光伏探测器。
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