WO2016123834A1 - 高精度螺旋电位装置 - Google Patents

高精度螺旋电位装置 Download PDF

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Publication number
WO2016123834A1
WO2016123834A1 PCT/CN2015/073827 CN2015073827W WO2016123834A1 WO 2016123834 A1 WO2016123834 A1 WO 2016123834A1 CN 2015073827 W CN2015073827 W CN 2015073827W WO 2016123834 A1 WO2016123834 A1 WO 2016123834A1
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Prior art keywords
resistor
potential device
thread
precision
pointer
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PCT/CN2015/073827
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English (en)
French (fr)
Inventor
张贯京
陈兴明
葛新科
张少鹏
方静芳
高伟明
梁艳妮
周荣
梁昊原
周亮
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Shenzhen Qianhai AnyCheck Information Technology Co Ltd
E Techno Information Technologies Co Ltd
Bio Tech Academy China Co Ltd
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Shenzhen Qianhai AnyCheck Information Technology Co Ltd
E Techno Information Technologies Co Ltd
Bio Tech Academy China Co Ltd
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Publication of WO2016123834A1 publication Critical patent/WO2016123834A1/zh
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Ceased legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C10/00Adjustable resistors
    • H01C10/24Adjustable resistors the contact moving along turns of a helical resistive element, or vica versa

Definitions

  • the present invention relates to the field of electronic measurement technology, and in particular to a high precision spiral potential device.
  • variable resistor applications have been widely used, such as changing the characteristics of a signal generator, dimming a light, starting a motor or controlling its rotational speed, etc., which generally include a resistor body, a movable contact, and three leads. foot. Two fixed pins are connected to the two ends of the resistor body, and the other pin (center tap) is connected to the movable contact, and the movable contact moves linearly along the resistor body to change the resistance of the resistor body.
  • existing variable resistors are difficult to meet the accuracy requirements.
  • a primary object of the present invention is to provide a high precision spiral potential device that meets the requirements for variable resistor accuracy in the field of precision control and precision measurement.
  • the present invention provides a high precision spiral potential device comprising a resistor body, a resistor complex and a resistance pointer:
  • the surface of the resistor body is provided with a first thread; the resistor mating body is provided with a second thread that meshes with the first thread; a first end of the resistor pointer is in contact with a surface of the resistor body, and the resistor pointer The second end is fixed on the resistor mating body; the resistor mating body drives the resistor pointer to move along the first thread on the surface of the resistor body to change the output resistance value of the high precision spiral potential device .
  • the pitches of the first thread and the second thread are both set to be 0.1 mm to 5 mm.
  • the first end surface of the resistance pointer is attached with a gold plating material.
  • the pitches of the first thread and the second thread are both set to be 0.1 mm to 5 mm.
  • the first end of the resistance pointer is in contact with the bottom of the first thread.
  • the pitches of the first thread and the second thread are both set to be 0.1 mm to 5 mm.
  • the first end of the resistance pointer is in contact with the crest of the first thread.
  • a portion of the surface of the resistor body that is in contact with the first end of the resistor pointer is provided with one of a palladium-based resistive alloy layer, a platinum-based resistive alloy layer, a gold-based resistive layer, or a silver-based resistive alloy layer.
  • a portion of the surface of the resistor body that is in contact with the first end of the resistor pointer is provided with an organic insulating layer from the inside to the outside, and a palladium-based resistive alloy layer, a platinum-based resistive alloy layer, a gold-based resistive layer or One of the silver-based resistive alloy layers.
  • a portion of the surface of the resistor body that is in contact with the first end of the resistor pointer is provided with a nano metal layer, an organic insulating layer, a palladium-based resistive alloy layer, a platinum-based resistive alloy layer, and a gold base in this order from the inside to the outside.
  • a resistive layer or a silver-based resistive alloy layer is provided.
  • the pitches of the first thread and the second thread are both set to be 0.1 mm to 5 mm.
  • the resistor body has a diameter of 5 mm to 100 mm.
  • the surface of the resistor body has a resistivity of 1.0 ⁇ 10 ⁇ 6 ⁇ to 1.0 ⁇ 10 ⁇ 3 ⁇ and a temperature coefficient of ⁇ 1 ppm to ⁇ 100 ppm.
  • the high-precision spiral potential device provided by the embodiment of the invention comprises a resistor body, a resistor matching body and a resistance pointer, and the first thread is respectively disposed on the resistor body and the resistor body.
  • the resistance partner drives the resistance pointer to move along the first thread on the surface of the resistor body, thereby changing the output resistance value of the high-precision spiral potential device, and comparing the resistance pointer of the prior art to move in a linear direction along the resistance body
  • the high-precision spiral potential device provided by the embodiment of the invention improves the precision of the output resistance value of the high-precision spiral potential device, and can meet the requirements of the precision of the variable resistor in the field of precision control and precision measurement.
  • FIG. 1 is a schematic structural view of a preferred embodiment of a high-precision spiral potential device according to the present invention
  • FIG. 2 is a schematic structural view of a first embodiment of a first thread and a second thread engagement of a high-precision spiral potential device according to the present invention
  • FIG. 3 is a schematic structural view of a second embodiment of a first thread and a second thread engagement of a high-precision spiral potential device according to the present invention
  • FIG. 4 is a schematic structural view of a preferred embodiment of the high precision spiral potential device of the present invention with an output end mark.
  • a primary object of the present invention is to provide a high precision spiral potential device that meets the requirements for variable resistor accuracy in the field of precision control and precision measurement.
  • the present invention provides a high precision spiral potential device.
  • FIG. 1 is a schematic structural view of a first preferred embodiment of a high-precision spiral potential device according to the present invention
  • FIG. 2 is a first embodiment of a first-thread and second-thread engagement of a high-precision helical potential device according to the present invention
  • FIG. 3 is a schematic structural view of a second embodiment of a first thread and a second thread meshing of a high precision spiral potential device according to the present invention.
  • the high-precision spiral potential device comprises a resistor body 10 , a resistor matching body 20 and a resistance pointer 30 (not shown in FIG. 1 , referring to FIG. 2 and Figure 3):
  • the surface of the resistor body 10 is provided with a first thread 101; the resistor mating body 20 is provided with a second thread 201 that meshes with the first thread 101; a first end 301 of the resistor pointer 30 and the resistor body a surface contact, the second end 302 of the resistor pointer 30 is fixed on the resistor mating body 20; the resistor mating body 20 drives the resistor pointer 30 along the first thread 101 on the surface of the resistor body 10 Moving to change the output resistance value of the high precision spiral potential device.
  • the resistor body 10 and the resistor mating body 20 may be configured as a screw and a thread.
  • the resistor body 10 is configured like a screw.
  • the surface of the resistor body 10 is provided with a first thread 101, and the resistor body 20 is disposed.
  • the resistor mating body 20 is provided with a second thread 201 that meshes with the first thread 101.
  • the first end 301 of the resistor pointer 30 is in surface contact with the resistor body 10, and the second end 302 of the resistor pointer 30 is fixed.
  • On the resistor mating body 20 On the resistor mating body 20.
  • the resistor body 10 When the high-precision spiral potential device is in operation, the resistor body 10 can be driven to rotate by an external force, and the resistor body 10 drives the resistor mating body 20 to drive the resistor pointer 30 along the first thread on the surface of the resistor body 10 101 moves to change the output resistance value of the high precision spiral potential device.
  • the resistance matching body 20 can be directly driven to rotate by an external force, and the resistance pointer 30 is moved along the first thread 101 on the surface of the resistor body 10 to change the Output resistance value of high precision spiral potential device.
  • the high-precision spiral potential device provided by the embodiment of the present invention provides the first thread 101 and the second thread 201 on the resistor body 10 and the resistor mating body 20 respectively, so that the resistor mating body 20 drives the resistor pointer 30 along the surface of the resistor body 10.
  • the first thread 101 is moved to change the output resistance value of the high-precision spiral potential device, and the high-precision spiral potential device provided by the embodiment of the present invention improves the high-precision spiral by comparing the resistance pointer of the prior art to the linear direction of the resistance body.
  • the accuracy of the output resistance of the potential device satisfies the requirements for variable resistor accuracy in the field of precision control and precision measurement.
  • the surface of the first end 301 of the resistance pointer 30 is adhered with a gold plating material.
  • Gold plating is actually covered with a special layer of gold on the metal contact surface.
  • brass plating can be used instead of gold plating. Since gold has strong oxidation resistance and conductivity, the gold plating process can prevent the first end 301 of the resistance pointer 30 and the surface of the resistor body 10 from being oxidized due to long-term use, and reduce contact resistance, thereby further improving high precision. The accuracy of the output resistance value of the spiral potential device.
  • the first end 301 of the resistive pointer 30 is in contact with the bottom of the first thread 101.
  • the resistance pointer 30 can be accurately guided.
  • the first end 301 moves along the bottom of the first thread 101 to play a guiding role, reducing errors in the measurement process using a high-precision helical potential device.
  • the first end 301 of the resistive pointer 30 is in contact with the crest of the first thread 101.
  • the first end 301 of the resistance pointer 30 may be disposed between the first end 301 of the resistance pointer 30 and the second end 302 of the resistance pointer 30.
  • a snap (not shown in FIG. 3) that snaps into engagement with the underside of the first thread 101. Since the root of the first thread 101 is of a groove type, the first end 301 of the resistance pointer 30 can be accurately guided by the buckle to move along the crest of the first thread 101, thereby guiding The function is to reduce the error in the measurement process using a high-precision spiral potential device.
  • a portion of the surface of the resistor body 10 that is in contact with the first end of the resistance pointer 30 is provided with a palladium-based resistor.
  • a palladium-based resistor One of an alloy layer, a platinum-based resistive alloy layer, a gold-based resistive layer, or a silver-based resistive alloy layer.
  • the surface of the resistor body 10 may be the crest 1012 of the first thread 101 or the root 1011 of the first thread 101.
  • Palladium-based resistance alloys such as palladium silver, palladium silver copper, palladium molybdenum, etc. are characterized by high resistivity, low temperature coefficient of resistance, low and stable contact resistance, and good solderability.
  • a portion of the surface of the resistor body 10 that is in contact with the first end of the resistor pointer 30 may also be provided with a platinum-based resistive alloy layer such as platinum rhodium, platinum rhodium, platinum copper or the like.
  • a gold-based resistive layer such as gold-silver-copper, gold-nickel-copper, gold-nickel-chromium, gold-palladium-iron-aluminum, or the like may also be provided.
  • a silver-based resistive alloy layer such as silver manganese tin may also be provided.
  • the above resistance alloy has small contact resistance, good chemical stability and wear resistance, and can improve the accuracy and life of the output resistance value of the high-precision spiral potential device.
  • the surface of the surface of the resistor body 10 that is in contact with the first end 301 of the resistance pointer 30 is from inside to outside.
  • An organic insulating layer, and one of a palladium-based resistive alloy layer, a platinum-based resistive alloy layer, a gold-based resistive layer, or a silver-based resistive alloy layer are sequentially disposed.
  • Organic insulating materials include insulating varnish, insulating rubber, insulating paper, insulating fiber products, rubber, and the like.
  • the organic insulating material can effectively isolate the electrical conductivity between the palladium-based resistive alloy layer and the metal body inside the body of the resistor body 10, and reduce the influence of other metal bodies on the output resistance value of the high-precision spiral potential device, and improve The accuracy of the measurement.
  • the outermost layer is provided with one of a palladium-based resistive alloy layer, a platinum-based resistive alloy layer, a gold-based resistive layer, and a silver-based resistive alloy layer, which has small contact resistance, good chemical stability and wear resistance, and can The accuracy and life of the output resistance value of the high-precision spiral potential device are improved.
  • the surface of the surface of the resistor body 10 that is in contact with the first end 301 of the resistance pointer 30 is from inside to outside.
  • One of a nano metal layer, an organic insulating layer, and a palladium-based resistive alloy layer, a platinum-based resistive alloy layer, a gold-based resistive layer, or a silver-based resistive alloy layer is disposed in this order.
  • the nano metal material is dense and has good electrical conductivity, which can improve the accuracy of the output resistance value of the high-precision spiral potential device.
  • the organic insulating material can effectively isolate the electrical conductivity between the resistive alloy layer and the metal body inside the body of the resistor body 10, reduce the influence of other metal bodies on the output resistance value of the high-precision spiral potential device, and improve the measurement. Precision.
  • the outermost layer is provided with one of a palladium-based resistive alloy layer, a platinum-based resistive alloy layer, a gold-based resistive layer, and a silver-based resistive alloy layer, which has small contact resistance, good chemical stability and wear resistance, and can The accuracy and life of the output resistance value of the high-precision spiral potential device are improved.
  • the pitches of the first thread 101 and the second thread 201 are both set to be 0.1 mm to 5 mm.
  • the smaller the pitch the higher the measurement accuracy of the high-precision spiral potential device.
  • the smaller the pitch the more complicated the manufacturing process of the high-precision spiral potential device. Therefore, the embodiment of the present invention preferably sets the pitch of the first thread 101 and the second thread 201 to 0.15 mm.
  • the resistor body has a diameter of 5 mm to 100 mm.
  • the larger the diameter of the resistor body the higher the measurement accuracy of the high-precision spiral potential device.
  • the larger the diameter of the resistor body the larger the space it occupies, which does not meet the requirements of its precision control and precision measurement fields. Therefore, the embodiment of the present invention preferably sets the diameter of the resistor body to 25 mm.
  • the surface of the resistor body has a resistivity of 1.0 ⁇ 10 ⁇ 6 ⁇ to 1.0 ⁇ 10 ⁇ 3 ⁇ and a temperature coefficient of ⁇ 1 ppm to ⁇ 100 ppm.
  • the resistivity of the surface of the resistor body was set to 1.0 ⁇ 10 - 5 ⁇ .
  • the temperature coefficient of the body surface is set to ⁇ 5 ppm.
  • FIG. 4 is a schematic structural view of a preferred embodiment of the high-precision spiral potential device of the present invention with an output end mark.
  • the connection manner of the output terminal of the high-precision spiral potential device in the measurement or control circuit is AC, BC, AB, when the output terminal is connected to AC or BC,
  • the resistor mating body 20 drives the resistor pointer to move along the first thread on the surface of the resistor body 10 to change the output resistance value of the high-precision spiral potential device.
  • the output terminal is connected to the AB end, the high precision
  • the output resistance of the spiral potential device is a fixed value.
  • the resistance becomes smaller when the resistance pointer moves to the left, and the current becomes larger; when the resistance pointer moves to the right, the resistance becomes larger and the current becomes smaller.
  • the resistance becomes larger when the resistance pointer moves to the left, and the current becomes smaller; when the resistance pointer moves to the right, the resistance becomes smaller and the current becomes larger.
  • the resistance at this time is the largest and the current passing through is also small. At the same time, the resistance of the resistor can not be changed by moving the resistance pointer, which is equivalent to a fixed value resistor.

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  • Microelectronics & Electronic Packaging (AREA)
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Abstract

一种高精度螺旋电位装置,包括电阻本体(10)、电阻配合体(20)和电阻指针(30),通过分别在电阻本体(10)和电阻配合体(20)上设置第一螺纹(101)和第二螺纹(201),使电阻配合体(20)带动电阻指针(30)在电阻本体(10)表面沿所述第一螺纹(101)移动,从而改变高精度螺旋电位装置的输出电阻值。对比现有技术中的电阻指针沿电阻本体直线方向移动,上述高精度螺旋电位装置提高了螺旋电位装置的输出电阻值的精度,能够满足在精密控制和精密测量领域对可变电阻器精度的要求。

Description

高精度螺旋电位装置
技术领域
本发明涉及电子测量技术领域,尤其涉及一种高精度螺旋电位装置。
背景技术
现有技术中,可变电阻器应用已经非常广泛,例如可以改变信号发生器的特性、使灯光变暗、启动电动机或控制它的转速等,其通常包括电阻体、活动触片和三个引脚。其中两个固定引脚接电阻体两端,另一个引脚(中心抽头)接活动触片,活动触片沿电阻体直线运动,以改变电阻体两端的电阻。在精密控制和精密测量领域,现有的可变电阻器很难满足其精度的需求。
基于此有必要提供一种高精度螺旋电位装置,以满足在精密控制和精密测量领域对可变电阻器精度的要求。
发明内容
本发明的主要目的在于提供一种高精度螺旋电位装置,以满足在精密控制和精密测量领域对可变电阻器精度的要求。
为实现上述目的,本发明提供了一种高精度螺旋电位装置,所述高精度螺旋电位装置包括电阻本体、电阻配合体和电阻指针:
所述电阻本体表面设置有第一螺纹;所述电阻配合体设置有与所述第一螺纹啮合的第二螺纹;所述电阻指针的第一端与所述电阻本体表面接触,所述电阻指针的第二端固定于所述电阻配合体上;所述电阻配合体带动所述电阻指针在所述电阻本体表面沿所述第一螺纹移动,以改变所述高精度螺旋电位装置的输出电阻值。
优选地,所述第一螺纹和所述第二螺纹的螺距均设置为0.1mm~5mm。
优选地,所述电阻指针的第一端表面附着有镀金材料。
优选地,所述第一螺纹和所述第二螺纹的螺距均设置为0.1mm~5mm。
优选地,所述电阻指针的第一端与所述第一螺纹的牙底接触。
优选地,所述第一螺纹和所述第二螺纹的螺距均设置为0.1mm~5mm。
优选地,所述电阻指针的第一端与所述第一螺纹的牙顶接触。
优选地,所述电阻本体表面与所述电阻指针的第一端接触的部分设置有钯基电阻合金层、铂基电阻合金层、金基电阻合层或银基电阻合金层中的一种。
优选地,所述电阻本体表面与所述电阻指针的第一端接触的部分由里至外依次设置有有机绝缘层,以及钯基电阻合金层、铂基电阻合金层、金基电阻合层或银基电阻合金层中的一种。
优选地,所述电阻本体表面与所述电阻指针的第一端接触的部分由里至外依次设置有纳米金属层、有机绝缘层,以及钯基电阻合金层、铂基电阻合金层、金基电阻合层或银基电阻合金层中的一种。
优选地,所述第一螺纹和所述第二螺纹的螺距均设置为0.1mm~5mm。
优选地,所述电阻本体的直径为5mm~100mm。
优选地,所述电阻本体表面的电阻率为1.0×10-6Ω~1.0×10-3Ω,温度系数为±1ppm~±100ppm。
本发明采用上述技术方案,带来的技术效果为:本发明实施例提供的高精度螺旋电位装置包括电阻本体、电阻配合体和电阻指针,通过分别在电阻本体和电阻配合体上设置第一螺纹和第二螺纹,使电阻配合体带动电阻指针在电阻本体表面沿所述第一螺纹移动,从而改变高精度螺旋电位装置的输出电阻值,对比现有技术中的电阻指针沿电阻本体直线方向移动,本发明实施例提供的高精度螺旋电位装置提高了高精度螺旋电位装置的输出电阻值的精度,能够满足在精密控制和精密测量领域对可变电阻器精度的要求。
附图说明
图1为本发明高精度螺旋电位装置优选实施例结构示意图;
图2为本发明高精度螺旋电位装置第一螺纹和第二螺纹啮合第一实施例结构示意图;
图3为本发明高精度螺旋电位装置第一螺纹和第二螺纹啮合第二实施例结构示意图;
图4为本发明高精度螺旋电位装置优选实施例带输出端标记的结构示意图。
本发明目的的实现、功能特点及优点将结合实施例,参照附图做进一步说明。
具体实施方式
应当理解,此处所描述的具体实施例仅仅用以解释本发明,并不用于限定本发明。
本发明的主要目的在于提供一种高精度螺旋电位装置,以满足在精密控制和精密测量领域对可变电阻器精度的要求。
为实现上述目的,本发明提供了一种高精度螺旋电位装置。
参照图1、图2、图3,图1为本发明高精度螺旋电位装置第一优选实施例结构示意图;图2为本发明高精度螺旋电位装置第一螺纹和第二螺纹啮合第一实施例结构示意图;图3为本发明高精度螺旋电位装置第一螺纹和第二螺纹啮合第二实施例结构示意图。
在一实施例中,如图1、图2、图3所示,所述高精度螺旋电位装置包括电阻本体10、电阻配合体20和电阻指针30(图1中未示出,参照图2和图3所示):
所述电阻本体10表面设置有第一螺纹101;所述电阻配合体20设置有与所述第一螺纹101啮合的第二螺纹201;所述电阻指针30的第一端301与所述电阻本体10表面接触,所述电阻指针30的第二端302固定于所述电阻配合体20上;所述电阻配合体20带动所述电阻指针30在所述电阻本体10表面沿所述第一螺纹101移动,以改变所述高精度螺旋电位装置的输出电阻值。
具体地,所述电阻本体10和所述电阻配合体20可以设置为螺杆和螺纹的结构,电阻本体10设置为类似螺杆的结构,电阻本体10表面设置有第一螺纹101,电阻配合体20设置为类似螺帽的结构,电阻配合体20上设置有与第一螺纹101啮合的第二螺纹201,电阻指针30的第一端301与电阻本体10表面接触,电阻指针30的第二端302固定于电阻配合体20上。所述高精度螺旋电位装置工作时,可以通过外力驱动所述电阻本体10转动,电阻本体10驱动所述电阻配合体20带动所述电阻指针30在所述电阻本体10表面沿所述第一螺纹101移动,以改变所述高精度螺旋电位装置的输出电阻值。所述高精度螺旋电位装置工作时,还可以通过外力直接驱动所述电阻配合体20转动,带动所述电阻指针30在所述电阻本体10表面沿所述第一螺纹101移动,以改变所述高精度螺旋电位装置的输出电阻值。
本发明实施例提供的高精度螺旋电位装置通过分别在电阻本体10和电阻配合体20上设置第一螺纹101和第二螺纹201,使电阻配合体20带动电阻指针30在电阻本体10表面沿所述第一螺纹101移动,从而改变高精度螺旋电位装置的输出电阻值,对比现有技术中的电阻指针沿电阻本体直线方向移动,本发明实施例提供的高精度螺旋电位装置提高了高精度螺旋电位装置的输出电阻值的精度,能够满足在精密控制和精密测量领域对可变电阻器精度的要求。
在其中一个优选的实施例中,所述电阻指针30的第一端301表面附着有镀金材料。镀金实际上是在金属接触表面上通过特殊工艺再覆上一层金,当然在一些低端应用场合,也可采用镀黄铜来代替镀金。由于金的抗氧化性和传导性很强,因此,采用镀金工艺能够防止电阻指针30的第一端301与所述电阻本体10表面由于长时间使用而氧化,且减少接触电阻,进一步提高高精度螺旋电位装置的输出电阻值的精度。
在其中一个优选的实施例中,如图2所示,所述电阻指针30的第一端301与所述第一螺纹101的牙底接触。当所述电阻指针30的第一端301与所述第一螺纹101的牙底接触时,由于所述第一螺纹101的牙底为凹槽型,因此,可以准确引导所述电阻指针30的第一端301沿所述第一螺纹101的牙底移动,起到导向作用,减少采用高精度螺旋电位装置测量过程中的误差。
在其中一个优选的实施例中,如图3所示,所述电阻指针30的第一端301与所述第一螺纹101的牙顶接触。当所述电阻指针30的第一端301与所述第一螺纹101的牙顶接触时,可以在所述电阻指针30的第一端301与所述电阻指针30的第二端302之间设置一个卡扣(图3中未示出),所述卡扣正好与所述第一螺纹101的牙底卡合。由于所述第一螺纹101的牙底为凹槽型,因此,可以通过所述卡扣准确引导所述电阻指针30的第一端301沿所述第一螺纹101的牙顶移动,起到导向作用,减少采用高精度螺旋电位装置测量过程中的误差。
为了进一步提高所述高精度螺旋电位装置的输出电阻值的精度和寿命,在其中一个实施例中,所述电阻本体10表面与所述电阻指针30的第一端接触的部分设置有钯基电阻合金层、铂基电阻合金层、金基电阻合层或银基电阻合金层中的一种。所述电阻本体10表面可以是所述第一螺纹101的牙顶1012,也可以是所述第一螺纹101的牙底1011。钯基电阻合金,例如钯银、钯银铜、钯钼等,其特点是电阻率高,电阻温度系数较低,接触电阻低而稳定,焊接性能好。当然,所述电阻本体10表面与所述电阻指针30的第一端接触的部分还可以设置有铂基电阻合金层,例如铂铑、铂铱、铂铜等。还可以设置有金基电阻合层,例如金银铜、金镍铜、金镍铬、金钯铁铝等。还可以设置有银基电阻合金层,例如银锰锡。以上电阻合金的接触电阻小,化学稳定性和耐磨性好,能够提高所述高精度螺旋电位装置的输出电阻值的精度和寿命。
为了进一步提高所述高精度螺旋电位装置的输出电阻值的精度和寿命,在其中一个实施例中,所述电阻本体10表面与所述电阻指针30的第一端301接触的部分由里至外依次设置有有机绝缘层,以及钯基电阻合金层、铂基电阻合金层、金基电阻合层或银基电阻合金层中的一种。有机绝缘材料包括绝缘漆、绝缘胶、绝缘纸、绝缘纤维制品、橡胶等。有机绝缘材料能够有效的隔离所述钯基电阻合金层与所述电阻本体10本体内部金属体之间的导电性,减少其他金属体对所述高精度螺旋电位装置的输出电阻值的影响,提高测量的精度。同时,最外层设置有钯基电阻合金层、铂基电阻合金层、金基电阻合层、银基电阻合金层中的一种,其接触电阻小,化学稳定性和耐磨性好,能够提高所述高精度螺旋电位装置的输出电阻值的精度和寿命。
为了进一步提高所述高精度螺旋电位装置的输出电阻值的精度和寿命,在其中一个实施例中,所述电阻本体10表面与所述电阻指针30的第一端301接触的部分由里至外依次设置有纳米金属层、有机绝缘层,以及钯基电阻合金层、铂基电阻合金层、金基电阻合层或银基电阻合金层中的一种。纳米金属材料质密且导电性能良好能够提高所述高精度螺旋电位装置的输出电阻值的精度。有机绝缘材料能够有效的隔离所述电阻合金层与所述电阻本体10本体内部金属体之间的导电性,减少其他金属体对所述高精度螺旋电位装置的输出电阻值的影响,提高测量的精度。同时,最外层设置有钯基电阻合金层、铂基电阻合金层、金基电阻合层、银基电阻合金层中的一种,其接触电阻小,化学稳定性和耐磨性好,能够提高所述高精度螺旋电位装置的输出电阻值的精度和寿命。
在其中一个实施例中,所述第一螺纹101和所述第二螺纹201的螺距均设置为0.1mm~5mm。螺距越小,所述高精度螺旋电位装置的测量精度越高。但螺距越小,所述高精度螺旋电位装置的制造工艺越复杂,因此,本发明实施例优选将所述第一螺纹101和所述第二螺纹201的螺距均设置为0.15mm。
在其中一个实施例中,所述电阻本体的直径为5mm~100mm。所述电阻本体的直径越大,所述高精度螺旋电位装置的测量精度越高。但所述电阻本体的直径越大,其占据的空间越大,不满足精密控制和精密测量领域对其体积的要求。因此,本发明实施例优选将所述电阻本体的直径设置为25mm。
在其中一个实施例中,所述电阻本体表面的电阻率为1.0×10-6Ω~1.0×10-3Ω,温度系数为±1ppm~±100ppm。实验证明,所述电阻本体表面的电阻率越高,单位距离的电阻越大,所得到的信号越大,所述高精度螺旋电位装置的测量精度越高,因此,本发明实施例将所述电阻本体表面的电阻率设置为1.0×10-5Ω。所述电阻本体表面的温度系数越小,表明环境温度对测量结果的影响越小,能够减小测量误差,提高所述高精度螺旋电位装置的测量精度,因此,本发明实施例将所述电阻本体表面的温度系数设置为±5ppm。
参照图4,图4为本发明高精度螺旋电位装置优选实施例带输出端标记的结构示意图。
本发明提供的高精度螺旋电位装置优选实施例在实际应用时,所述高精度螺旋电位装置在测量或控制电路中输出端的连接方式有AC、BC、AB,当输出端接AC或BC时,电阻配合体20带动所述电阻指针在所述电阻本体10表面沿所述第一螺纹移动,以改变所述高精度螺旋电位装置的输出电阻值,当输出端接AB端时,所述高精度螺旋电位装置的输出电阻值为定值。当输出端导线接AC时,电阻指针左移动时电阻变小,电流变大;当电阻指针向右移动时,电阻变大,电流变小。当输出端导线接BC时,电阻指针向左移动时电阻变大,电流变小;电阻指针向右移动时,电阻变小,电流变大。当输出端导线接AB时,这时的电阻是最大的,通过的电流也很小。同时电阻的阻值也不可以通过移动电阻指针来改变,也相当于一个定值电阻。
以上仅为本发明的优选实施例,并非因此限制本发明的专利范围,凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换,或直接或间接运用在其他相关的技术领域,均同理包括在本发明的专利保护范围内。

Claims (13)

  1. 一种高精度螺旋电位装置,其特征在于,所述高精度螺旋电位装置包括电阻本体、电阻配合体和电阻指针:
    所述电阻本体表面设置有第一螺纹;所述电阻配合体设置有与所述第一螺纹啮合的第二螺纹;所述电阻指针的第一端与所述电阻本体表面接触,所述电阻指针的第二端固定于所述电阻配合体上;所述电阻配合体带动所述电阻指针在所述电阻本体表面沿所述第一螺纹移动,以改变所述高精度螺旋电位装置的输出电阻值。
  2. 如权利要求1所述的高精度螺旋电位装置,其特征在于,所述第一螺纹和所述第二螺纹的螺距均设置为0.1mm~5mm。
  3. 如权利要求1所述的高精度螺旋电位装置,其特征在于,所述电阻指针的第一端表面附着有镀金材料。
  4. 如权利要求3所述的高精度螺旋电位装置,其特征在于,所述第一螺纹和所述第二螺纹的螺距均设置为0.1mm~5mm。
  5. 如权利要求1所述的高精度螺旋电位装置,其特征在于,所述电阻指针的第一端与所述第一螺纹的牙底接触。
  6. 如权利要求5所述的高精度螺旋电位装置,其特征在于,所述第一螺纹和所述第二螺纹的螺距均设置为0.1mm~5mm。
  7. 如权利要求1所述的高精度螺旋电位装置,其特征在于,所述电阻指针的第一端与所述第一螺纹的牙顶接触。
  8. 如权利要求1所述的高精度螺旋电位装置,其特征在于,所述电阻本体表面与所述电阻指针的第一端接触的部分设置有钯基电阻合金层、铂基电阻合金层、金基电阻合层或银基电阻合金层中的一种。
  9. 如权利要求1所述的高精度螺旋电位装置,其特征在于,所述电阻本体表面与所述电阻指针的第一端接触的部分由里至外依次设置有有机绝缘层,以及钯基电阻合金层、铂基电阻合金层、金基电阻合层或银基电阻合金层中的一种。
  10. 如权利要求1所述的高精度螺旋电位装置,其特征在于,所述电阻本体表面与所述电阻指针的第一端接触的部分由里至外依次设置有纳米金属层、有机绝缘层,以及钯基电阻合金层、铂基电阻合金层、金基电阻合层或银基电阻合金层中的一种。
  11. 如权利要求7所述的高精度螺旋电位装置,其特征在于,所述第一螺纹和所述第二螺纹的螺距均设置为0.1mm~5mm。
  12. 如权利要求1所述的高精度螺旋电位装置,其特征在于,所述电阻本体的直径为5mm~100mm。
  13. 如权利要求1所述的高精度螺旋电位装置,其特征在于,所述电阻本体表面的电阻率为1.0×10-6Ω~1.0×10-3Ω,温度系数为±1ppm~±100ppm。
PCT/CN2015/073827 2015-02-06 2015-03-07 高精度螺旋电位装置 Ceased WO2016123834A1 (zh)

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