WO2016123834A1 - High precision wound electric potential device - Google Patents

Abstract

A high precision wound electric potential device. The high precision wound electric potential device comprises a resistor member (10), a resistor matching member (20) and a resistor wiper (30). The device is provided with a first winding (101) and a second winding (201) on the resistor member (10) and the resistor matching member (20) respectively, and enables the resistor matching member (20) to drive the resistor wiper (30) to move along the first winding (101) at a surface of the resistor member (10), thereby changing an output resistor value of the high precision wound electric potential device. Compared to a resistor wiper moving along the resistor member in a linear direction in the prior art, the above high precision wound electric potential device improves the precision of the output resistor value of the wound electric potential device, satisfying demands for variable resistor precision in the field of precise control and precise measurement.

Description

 High precision spiral potential device

Technical field

The present invention relates to the field of electronic measurement technology, and in particular to a high precision spiral potential device.

Background technique

In the prior art, variable resistor applications have been widely used, such as changing the characteristics of a signal generator, dimming a light, starting a motor or controlling its rotational speed, etc., which generally include a resistor body, a movable contact, and three leads. foot. Two fixed pins are connected to the two ends of the resistor body, and the other pin (center tap) is connected to the movable contact, and the movable contact moves linearly along the resistor body to change the resistance of the resistor body. In the field of precision control and precision measurement, existing variable resistors are difficult to meet the accuracy requirements.

Based on this, it is necessary to provide a high-precision spiral potential device to meet the requirements of variable resistor accuracy in the field of precision control and precision measurement.

Summary of the invention

SUMMARY OF THE INVENTION A primary object of the present invention is to provide a high precision spiral potential device that meets the requirements for variable resistor accuracy in the field of precision control and precision measurement.

To achieve the above object, the present invention provides a high precision spiral potential device comprising a resistor body, a resistor complex and a resistance pointer:

The surface of the resistor body is provided with a first thread; the resistor mating body is provided with a second thread that meshes with the first thread; a first end of the resistor pointer is in contact with a surface of the resistor body, and the resistor pointer The second end is fixed on the resistor mating body; the resistor mating body drives the resistor pointer to move along the first thread on the surface of the resistor body to change the output resistance value of the high precision spiral potential device .

Preferably, the pitches of the first thread and the second thread are both set to be 0.1 mm to 5 mm.

Preferably, the first end surface of the resistance pointer is attached with a gold plating material.

Preferably, the pitches of the first thread and the second thread are both set to be 0.1 mm to 5 mm.

Preferably, the first end of the resistance pointer is in contact with the bottom of the first thread.

Preferably, the pitches of the first thread and the second thread are both set to be 0.1 mm to 5 mm.

Preferably, the first end of the resistance pointer is in contact with the crest of the first thread.

Preferably, a portion of the surface of the resistor body that is in contact with the first end of the resistor pointer is provided with one of a palladium-based resistive alloy layer, a platinum-based resistive alloy layer, a gold-based resistive layer, or a silver-based resistive alloy layer.

Preferably, a portion of the surface of the resistor body that is in contact with the first end of the resistor pointer is provided with an organic insulating layer from the inside to the outside, and a palladium-based resistive alloy layer, a platinum-based resistive alloy layer, a gold-based resistive layer or One of the silver-based resistive alloy layers.

Preferably, a portion of the surface of the resistor body that is in contact with the first end of the resistor pointer is provided with a nano metal layer, an organic insulating layer, a palladium-based resistive alloy layer, a platinum-based resistive alloy layer, and a gold base in this order from the inside to the outside. One of a resistive layer or a silver-based resistive alloy layer.

Preferably, the pitches of the first thread and the second thread are both set to be 0.1 mm to 5 mm.

Preferably, the resistor body has a diameter of 5 mm to 100 mm.

Preferably, the surface of the resistor body has a resistivity of 1.0×10 −6 Ω to 1.0×10 −3 Ω and a temperature coefficient of ±1 ppm to ±100 ppm.

The technical solution of the present invention is as follows: the high-precision spiral potential device provided by the embodiment of the invention comprises a resistor body, a resistor matching body and a resistance pointer, and the first thread is respectively disposed on the resistor body and the resistor body. And the second thread, the resistance partner drives the resistance pointer to move along the first thread on the surface of the resistor body, thereby changing the output resistance value of the high-precision spiral potential device, and comparing the resistance pointer of the prior art to move in a linear direction along the resistance body The high-precision spiral potential device provided by the embodiment of the invention improves the precision of the output resistance value of the high-precision spiral potential device, and can meet the requirements of the precision of the variable resistor in the field of precision control and precision measurement.

DRAWINGS

1 is a schematic structural view of a preferred embodiment of a high-precision spiral potential device according to the present invention;

2 is a schematic structural view of a first embodiment of a first thread and a second thread engagement of a high-precision spiral potential device according to the present invention;

3 is a schematic structural view of a second embodiment of a first thread and a second thread engagement of a high-precision spiral potential device according to the present invention;

4 is a schematic structural view of a preferred embodiment of the high precision spiral potential device of the present invention with an output end mark.

The implementation, functional features, and advantages of the present invention will be further described in conjunction with the embodiments.

detailed description

It is understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.

SUMMARY OF THE INVENTION A primary object of the present invention is to provide a high precision spiral potential device that meets the requirements for variable resistor accuracy in the field of precision control and precision measurement.

To achieve the above object, the present invention provides a high precision spiral potential device.

1 and 2, FIG. 1 is a schematic structural view of a first preferred embodiment of a high-precision spiral potential device according to the present invention; FIG. 2 is a first embodiment of a first-thread and second-thread engagement of a high-precision helical potential device according to the present invention; FIG. 3 is a schematic structural view of a second embodiment of a first thread and a second thread meshing of a high precision spiral potential device according to the present invention.

In an embodiment, as shown in FIG. 1 , FIG. 2 and FIG. 3 , the high-precision spiral potential device comprises a resistor body 10 , a resistor matching body 20 and a resistance pointer 30 (not shown in FIG. 1 , referring to FIG. 2 and Figure 3):

The surface of the resistor body 10 is provided with a first thread 101; the resistor mating body 20 is provided with a second thread 201 that meshes with the first thread 101; a first end 301 of the resistor pointer 30 and the resistor body a surface contact, the second end 302 of the resistor pointer 30 is fixed on the resistor mating body 20; the resistor mating body 20 drives the resistor pointer 30 along the first thread 101 on the surface of the resistor body 10 Moving to change the output resistance value of the high precision spiral potential device.

Specifically, the resistor body 10 and the resistor mating body 20 may be configured as a screw and a thread. The resistor body 10 is configured like a screw. The surface of the resistor body 10 is provided with a first thread 101, and the resistor body 20 is disposed. For the structure similar to the nut, the resistor mating body 20 is provided with a second thread 201 that meshes with the first thread 101. The first end 301 of the resistor pointer 30 is in surface contact with the resistor body 10, and the second end 302 of the resistor pointer 30 is fixed. On the resistor mating body 20. When the high-precision spiral potential device is in operation, the resistor body 10 can be driven to rotate by an external force, and the resistor body 10 drives the resistor mating body 20 to drive the resistor pointer 30 along the first thread on the surface of the resistor body 10 101 moves to change the output resistance value of the high precision spiral potential device. When the high-precision spiral potential device is in operation, the resistance matching body 20 can be directly driven to rotate by an external force, and the resistance pointer 30 is moved along the first thread 101 on the surface of the resistor body 10 to change the Output resistance value of high precision spiral potential device.

The high-precision spiral potential device provided by the embodiment of the present invention provides the first thread 101 and the second thread 201 on the resistor body 10 and the resistor mating body 20 respectively, so that the resistor mating body 20 drives the resistor pointer 30 along the surface of the resistor body 10. The first thread 101 is moved to change the output resistance value of the high-precision spiral potential device, and the high-precision spiral potential device provided by the embodiment of the present invention improves the high-precision spiral by comparing the resistance pointer of the prior art to the linear direction of the resistance body. The accuracy of the output resistance of the potential device satisfies the requirements for variable resistor accuracy in the field of precision control and precision measurement.

In a preferred embodiment, the surface of the first end 301 of the resistance pointer 30 is adhered with a gold plating material. Gold plating is actually covered with a special layer of gold on the metal contact surface. Of course, in some low-end applications, brass plating can be used instead of gold plating. Since gold has strong oxidation resistance and conductivity, the gold plating process can prevent the first end 301 of the resistance pointer 30 and the surface of the resistor body 10 from being oxidized due to long-term use, and reduce contact resistance, thereby further improving high precision. The accuracy of the output resistance value of the spiral potential device.

In one preferred embodiment, as shown in FIG. 2, the first end 301 of the resistive pointer 30 is in contact with the bottom of the first thread 101. When the first end 301 of the resistance pointer 30 is in contact with the bottom of the first thread 101, since the root of the first thread 101 is of a groove type, the resistance pointer 30 can be accurately guided. The first end 301 moves along the bottom of the first thread 101 to play a guiding role, reducing errors in the measurement process using a high-precision helical potential device.

In a preferred embodiment, as shown in FIG. 3, the first end 301 of the resistive pointer 30 is in contact with the crest of the first thread 101. When the first end 301 of the resistance pointer 30 is in contact with the crest of the first thread 101, it may be disposed between the first end 301 of the resistance pointer 30 and the second end 302 of the resistance pointer 30. A snap (not shown in FIG. 3) that snaps into engagement with the underside of the first thread 101. Since the root of the first thread 101 is of a groove type, the first end 301 of the resistance pointer 30 can be accurately guided by the buckle to move along the crest of the first thread 101, thereby guiding The function is to reduce the error in the measurement process using a high-precision spiral potential device.

In order to further improve the accuracy and lifetime of the output resistance value of the high-precision spiral potential device, in one embodiment, a portion of the surface of the resistor body 10 that is in contact with the first end of the resistance pointer 30 is provided with a palladium-based resistor. One of an alloy layer, a platinum-based resistive alloy layer, a gold-based resistive layer, or a silver-based resistive alloy layer. The surface of the resistor body 10 may be the crest 1012 of the first thread 101 or the root 1011 of the first thread 101. Palladium-based resistance alloys, such as palladium silver, palladium silver copper, palladium molybdenum, etc., are characterized by high resistivity, low temperature coefficient of resistance, low and stable contact resistance, and good solderability. Of course, a portion of the surface of the resistor body 10 that is in contact with the first end of the resistor pointer 30 may also be provided with a platinum-based resistive alloy layer such as platinum rhodium, platinum rhodium, platinum copper or the like. A gold-based resistive layer such as gold-silver-copper, gold-nickel-copper, gold-nickel-chromium, gold-palladium-iron-aluminum, or the like may also be provided. A silver-based resistive alloy layer such as silver manganese tin may also be provided. The above resistance alloy has small contact resistance, good chemical stability and wear resistance, and can improve the accuracy and life of the output resistance value of the high-precision spiral potential device.

In order to further improve the accuracy and lifetime of the output resistance value of the high-precision helical potential device, in one embodiment, the surface of the surface of the resistor body 10 that is in contact with the first end 301 of the resistance pointer 30 is from inside to outside. An organic insulating layer, and one of a palladium-based resistive alloy layer, a platinum-based resistive alloy layer, a gold-based resistive layer, or a silver-based resistive alloy layer are sequentially disposed. Organic insulating materials include insulating varnish, insulating rubber, insulating paper, insulating fiber products, rubber, and the like. The organic insulating material can effectively isolate the electrical conductivity between the palladium-based resistive alloy layer and the metal body inside the body of the resistor body 10, and reduce the influence of other metal bodies on the output resistance value of the high-precision spiral potential device, and improve The accuracy of the measurement. At the same time, the outermost layer is provided with one of a palladium-based resistive alloy layer, a platinum-based resistive alloy layer, a gold-based resistive layer, and a silver-based resistive alloy layer, which has small contact resistance, good chemical stability and wear resistance, and can The accuracy and life of the output resistance value of the high-precision spiral potential device are improved.

In order to further improve the accuracy and lifetime of the output resistance value of the high-precision helical potential device, in one embodiment, the surface of the surface of the resistor body 10 that is in contact with the first end 301 of the resistance pointer 30 is from inside to outside. One of a nano metal layer, an organic insulating layer, and a palladium-based resistive alloy layer, a platinum-based resistive alloy layer, a gold-based resistive layer, or a silver-based resistive alloy layer is disposed in this order. The nano metal material is dense and has good electrical conductivity, which can improve the accuracy of the output resistance value of the high-precision spiral potential device. The organic insulating material can effectively isolate the electrical conductivity between the resistive alloy layer and the metal body inside the body of the resistor body 10, reduce the influence of other metal bodies on the output resistance value of the high-precision spiral potential device, and improve the measurement. Precision. At the same time, the outermost layer is provided with one of a palladium-based resistive alloy layer, a platinum-based resistive alloy layer, a gold-based resistive layer, and a silver-based resistive alloy layer, which has small contact resistance, good chemical stability and wear resistance, and can The accuracy and life of the output resistance value of the high-precision spiral potential device are improved.

In one embodiment, the pitches of the first thread 101 and the second thread 201 are both set to be 0.1 mm to 5 mm. The smaller the pitch, the higher the measurement accuracy of the high-precision spiral potential device. However, the smaller the pitch, the more complicated the manufacturing process of the high-precision spiral potential device. Therefore, the embodiment of the present invention preferably sets the pitch of the first thread 101 and the second thread 201 to 0.15 mm.

In one embodiment, the resistor body has a diameter of 5 mm to 100 mm. The larger the diameter of the resistor body, the higher the measurement accuracy of the high-precision spiral potential device. However, the larger the diameter of the resistor body, the larger the space it occupies, which does not meet the requirements of its precision control and precision measurement fields. Therefore, the embodiment of the present invention preferably sets the diameter of the resistor body to 25 mm.

In one embodiment, the surface of the resistor body has a resistivity of 1.0×10 −6 Ω to 1.0×10 −3 Ω and a temperature coefficient of ±1 ppm to ±100 ppm. Experiments have shown that the higher the resistivity of the surface of the resistor body, the greater the resistance per unit distance, and the larger the obtained signal, the higher the measurement accuracy of the high-precision spiral potential device, and therefore, the embodiment of the present invention will The resistivity of the surface of the resistor body was set to 1.0 × 10 - 5 Ω. The smaller the temperature coefficient of the surface of the resistor body is, the smaller the influence of the ambient temperature on the measurement result is, the measurement error can be reduced, and the measurement precision of the high-precision spiral potential device is improved. Therefore, the resistor of the embodiment of the present invention The temperature coefficient of the body surface is set to ±5 ppm.

Referring to FIG. 4, FIG. 4 is a schematic structural view of a preferred embodiment of the high-precision spiral potential device of the present invention with an output end mark.

The preferred embodiment of the high-precision spiral potential device provided by the present invention, in practical application, the connection manner of the output terminal of the high-precision spiral potential device in the measurement or control circuit is AC, BC, AB, when the output terminal is connected to AC or BC, The resistor mating body 20 drives the resistor pointer to move along the first thread on the surface of the resistor body 10 to change the output resistance value of the high-precision spiral potential device. When the output terminal is connected to the AB end, the high precision The output resistance of the spiral potential device is a fixed value. When the output terminal is connected to AC, the resistance becomes smaller when the resistance pointer moves to the left, and the current becomes larger; when the resistance pointer moves to the right, the resistance becomes larger and the current becomes smaller. When the output terminal is connected to BC, the resistance becomes larger when the resistance pointer moves to the left, and the current becomes smaller; when the resistance pointer moves to the right, the resistance becomes smaller and the current becomes larger. When the output wire is connected to AB, the resistance at this time is the largest and the current passing through is also small. At the same time, the resistance of the resistor can not be changed by moving the resistance pointer, which is equivalent to a fixed value resistor.

The above are only the preferred embodiments of the present invention, and are not intended to limit the scope of the invention, and the equivalent structure or equivalent process transformations made by the description of the present invention and the drawings are directly or indirectly applied to other related technical fields. The same is included in the scope of patent protection of the present invention.

Claims (13)

1. A high-precision spiral potential device, characterized in that the high-precision spiral potential device comprises a resistor body, a resistor complex and a resistance pointer:

   The surface of the resistor body is provided with a first thread; the resistor mating body is provided with a second thread that meshes with the first thread; a first end of the resistor pointer is in contact with a surface of the resistor body, and the resistor pointer The second end is fixed on the resistor mating body; the resistor mating body drives the resistor pointer to move along the first thread on the surface of the resistor body to change the output resistance value of the high precision spiral potential device .
2. The high-precision spiral potential device according to claim 1, wherein a pitch of the first thread and the second thread is set to be 0.1 mm to 5 mm.
3. A high-precision spiral potential device according to claim 1, wherein a surface of the first end of the resistance pointer is adhered with a gold plating material.
4. The high-precision helical potential device according to claim 3, wherein the pitch of the first thread and the second thread are both set to be 0.1 mm to 5 mm.
5. A high precision helical potential device according to claim 1 wherein the first end of the resistive hand is in contact with the bottom of the first thread.
6. The high-precision helical potential device according to claim 5, wherein the pitch of the first thread and the second thread are both set to be 0.1 mm to 5 mm.
7. A high precision helical potential device according to claim 1 wherein the first end of the resistive hand is in contact with the crest of the first thread.
8. The high-precision spiral potential device according to claim 1, wherein a portion of the surface of the resistor body that is in contact with the first end of the resistor pointer is provided with a palladium-based resistive alloy layer, a platinum-based resistive alloy layer, and a gold base. One of a resistive layer or a silver-based resistive alloy layer.
9. The high-precision spiral potential device according to claim 1, wherein a portion of the surface of the resistor body that is in contact with the first end of the resistor pointer is provided with an organic insulating layer from the inside to the outside, and a palladium-based resistance alloy. One of a layer, a platinum-based resistive alloy layer, a gold-based resistive layer, or a silver-based resistive alloy layer.
10. The high-precision spiral potential device according to claim 1, wherein a portion of the surface of the resistor body that is in contact with the first end of the resistor pointer is provided with a nano metal layer and an organic insulating layer in this order from the inside to the outside, and One of a palladium-based resistive alloy layer, a platinum-based resistive alloy layer, a gold-based resistive layer, or a silver-based resistive alloy layer.
11. The high-precision helical potential device according to claim 7, wherein the pitch of the first thread and the second thread are both set to be 0.1 mm to 5 mm.
12. The high-precision spiral potential device according to claim 1, wherein the resistor body has a diameter of 5 mm to 100 mm.
13. The high-precision spiral potential device according to claim 1, wherein the surface of the resistor body has a resistivity of 1.0 × 10 -6 Ω to 1.0 × 10 -3 Ω and a temperature coefficient of ± 1 ppm to ± 100 ppm.