WO2016119732A1 - 一种发光二极管及其制造方法 - Google Patents

一种发光二极管及其制造方法 Download PDF

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Publication number
WO2016119732A1
WO2016119732A1 PCT/CN2016/072684 CN2016072684W WO2016119732A1 WO 2016119732 A1 WO2016119732 A1 WO 2016119732A1 CN 2016072684 W CN2016072684 W CN 2016072684W WO 2016119732 A1 WO2016119732 A1 WO 2016119732A1
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layer
spiral coil
insulating layer
emitting diode
type
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PCT/CN2016/072684
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English (en)
French (fr)
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尹灵峰
谢鹏
韩涛
王江波
刘榕
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华灿光电股份有限公司
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Publication of WO2016119732A1 publication Critical patent/WO2016119732A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies

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  • the present invention relates to the field of semiconductor technologies, and in particular, to a light emitting diode and a method of fabricating the same.
  • a light emitting diode is a semiconductor light emitting device widely used for indicator lights, display screens, and the like.
  • White LED is the third generation electric light source after incandescent lamp and fluorescent lamp. The energy consumption of white LED is only one-eighth of incandescent lamp, one-half of fluorescent lamp can last up to 100,000 hours, for ordinary household lighting. It can be described as "one time and for all.”
  • the existing LED includes a substrate and an epitaxial layer laminated on the substrate, the epitaxial layer includes an N-type layer, a light-emitting layer, and a P-type layer sequentially stacked on the substrate, and the epitaxial layer is extended from the P-type layer to the N-layer
  • the groove of the profile layer is provided with a P-type electrode on the P-type layer and an N-type electrode on the N-type layer.
  • the epitaxial layer is a semiconductor
  • the P-type electrode and the N-type electrode are generally conductors, and the carriers (including electrons and holes) of the conductor have a much higher mobility than the semiconductor, and the carriers in the epitaxial layer are dispersed in order to disperse the current in the epitaxial layer.
  • the P-type electrode and/or the N-type electrode are generally designed to include a contact near the periphery of the epitaxial layer and at least one strip-shaped segment electrically connected to the contact, one electrode (P-type electrode or N-type electrode)
  • the strip segments extend outwardly from the junction of the electrodes and toward the junction of the other electrode. Since the electrodes (P-type electrode and N-type electrode) use a light absorbing material, the strip-shaped region absorbs the light emitted by the epitaxial layer while increasing the current spreading, thereby reducing the luminous efficiency of the LED.
  • the embodiment of the invention provides a light emitting diode and a manufacturing method thereof.
  • the technical solution is as follows:
  • an embodiment of the present invention provides a light emitting diode including a permanent substrate, and an adhesive layer, a first insulating layer, a spiral coil, and a second insulating layer, which are sequentially formed on the permanent substrate.
  • a metal reflective layer, a P-type layer, a light-emitting layer, an N-type layer, and an N-type electrode a center line of the spiral coil is parallel to a direction in which the layers of the light emitting diode are formed, and one end of the spiral coil is connected to the metal reflective layer through the second insulating layer, and the other end of the spiral coil is worn
  • the first insulating layer is connected to the bonding layer, and the bonding layer and the permanent substrate are both made of a non-insulating material.
  • the spiral coil is made of one or more of Au, Al, Cu, Ag, Fe, Ti.
  • the spiral coil has a height of 1-10 microns.
  • the first insulating layer is made of SiO 2 or SiN x
  • the second insulating layer is made of SiO 2 or SiN x .
  • the first insulating layer has a thickness of 1-10 micrometers
  • the second insulating layer has a thickness of 1-10 micrometers.
  • an embodiment of the present invention provides a method of fabricating a light emitting diode, the method of manufacturing comprising:
  • a center line of the spiral coil is parallel to a direction in which the layers of the light emitting diode are formed, and one end of the spiral coil passes through the second insulating layer a through hole is connected to the metal reflective layer;
  • first insulating layer Forming a first insulating layer on the spiral coil, wherein the first insulating layer is provided with a through hole along a forming direction of each layer of the light emitting diode, and a through hole in the first insulating layer leads to The other end of the spiral coil;
  • a permanent substrate is adhered to the first insulating layer by an adhesive layer, and the adhesive layer is connected to the other end of the spiral coil through a through hole in the first insulating layer, the adhesive layer And the permanent substrate is made of a non-insulating material;
  • An N-type electrode is disposed on the N-type layer.
  • the forming a spiral coil on the second insulating layer comprises:
  • the remaining photoresist and the metal film on the photoresist are stripped to form a spiral coil.
  • the spiral coil is made of one or more of Au, Al, Cu, Ag, Fe, Ti.
  • the spiral coil has a height of 1-10 microns.
  • the first insulating layer is made of SiO 2 or SiN x
  • the second insulating layer is made of SiO 2 or SiN x .
  • the center line of the spiral coil is parallel to the direction in which the layers of the light emitting diode are formed.
  • a magnetic field is formed in the spiral coil, according to the Hall effect.
  • the electrons of the N-type layer are deflected toward the side of the N-type layer by the Lorentz force, so that the electrons of the N-type layer are evenly distributed on the side of the N-type layer under the action of the Lorentz force, and the N-type is dispersed.
  • the current in the layer promotes the expansion of the current, and the LED chip is easier to emit light.
  • the N-type electrode can reduce the strip-shaped section provided for expanding the current, reducing the use of the light-absorbing material used for the electrode, thereby reducing the N-type.
  • the P-type electrode is in contact with the metal reflective layer, and the hole current spreadability of the P-type layer is good, and the metal reflective layer reflects the light emitted by the light-emitting layer, thereby further improving the luminous efficiency of the LED.
  • FIG. 1 is a schematic structural view of a light emitting diode according to Embodiment 1 of the present invention.
  • FIG. 2 is a top plan view of a spiral coil according to Embodiment 1 of the present invention.
  • FIG. 3 is a schematic diagram of the force applied to an electron of an N-type layer according to Embodiment 1 of the present invention.
  • FIG. 4 is a schematic diagram of an N-type electrode according to Embodiment 1 of the present invention.
  • FIG. 5 is a flowchart of a method for manufacturing a light emitting diode according to Embodiment 2 of the present invention.
  • 6a-6h are schematic structural views of a light emitting diode in a process of manufacturing a light emitting diode according to Embodiment 2 of the present invention.
  • the light emitting diode includes a permanent substrate 1 , and an adhesive layer 2 , a first insulating layer 3 , a spiral coil 4 , and a second layer which are sequentially formed on the permanent substrate 1 .
  • the center line of the spiral coil 4 is parallel to the direction in which the layers of the light emitting diode are formed, one end of the spiral coil 4 is connected to the metal reflective layer 6 through the second insulating layer 5, and the other end of the spiral coil 4 passes through the first
  • the insulating layer 3 is connected to the bonding layer 2. Both the bonding layer 2 and the permanent substrate 1 are made of a non-insulating material.
  • the second insulating layer 5 (such as an approximate intermediate position) is provided with a through hole along the forming direction of each layer of the LED; on the other hand, the spiral coil 4 and the metal reflective layer 6 are both steamed by an electron gun. It is formed by plating, so that one end of the spiral coil 4 is easily connected to the metal reflective layer 6 through the through hole in the second insulating layer 5.
  • a layer of photoresist is first covered on the second insulating layer, and then exposed by a spiral lithography plate, and then the photoresist in the spiral region is removed by the developing solution, and then the electron gun is steamed.
  • a metal film is plated, and finally the remaining photoresist and the metal film on the photoresist are stripped to form a spiral coil, and the thickness of the metal film is the height of the spiral coil.
  • the first insulating layer 3 (such as near the peripheral position) is also provided with a through hole along the direction in which the LED layers are formed.
  • the adhesive layer 2 is also formed by electron gun evaporation, so It is easy to connect the other end of the spiral coil 4 through the through hole in the first insulating layer 3 to the bonding layer 2.
  • the spiral coil 4 may be made of one or more of Au, Al, Cu, Ag, Fe, and Ti.
  • the height of the spiral coil 4 may be 1-10 microns.
  • the first insulating layer 3 may be made of SiO 2 or SiN x
  • the second insulating layer 5 may be made of SiO 2 or SiN x .
  • the first insulating layer 3 may have a thickness of 1-10 micrometers
  • the second insulating layer 5 may have a thickness of 1-10 micrometers.
  • the metal reflective layer 6 may be made of one or more of ITO/Ag, Ag, Al, Au, Pt, and Rh. It is easy to know that when the metal reflective layer 6 is made of the aforementioned material, on the one hand, a good ohmic contact is formed with the P-type layer 7, and on the other hand, the metal reflective layer 6 has a high emissivity, and the reflectance can exceed 80%.
  • the metal reflective layer 6 may have a thickness of 1-5 microns.
  • the N-type electrode 10 may be made of one or more of Au, Al, Cu, Ag, Fe, Ti, Cr, and Pt.
  • the bonding layer 2 may be made of one or more of AuSn, Au, Ti, In, InAu.
  • the permanent substrate 1 may be made of one or more of Si, SiC, Cu, Mo, and CuW.
  • FIG. 2 is a plan view of the spiral coil 4, in which A represents an electric field, an arrow represents an electric field direction, B represents a magnetic field, and a fork represents a magnetic field direction.
  • A represents an electric field
  • an arrow represents an electric field direction
  • B represents a magnetic field
  • a fork represents a magnetic field direction.
  • the permanent substrate is used as a positive electrode of the P-type electrode connected to the power source
  • the N-type electrode is connected to the negative electrode of the power source
  • the permanent substrate, the bonding layer, the spiral coil, the metal reflective layer, the P-type layer, the light-emitting layer, and the like are sequentially electrically connected.
  • Both the N-type layer and the N-type electrode are made of a non-insulating material, so that under the action of the power source, the spiral coil can be energized to generate a magnetic field.
  • FIG. 3 is a schematic diagram of the force of electrons of the N-type layer, wherein B represents a magnetic field, and v represents a moving direction of electrons (related to the position of the N-type electrode and the P-type electrode, for example, in FIG. 1, the N-type electrode is set.
  • B represents a magnetic field
  • v represents a moving direction of electrons (related to the position of the N-type electrode and the P-type electrode, for example, in FIG. 1, the N-type electrode is set.
  • the direction of movement of electrons is from the right side of the periphery of the N-type layer to the left side of the periphery of the N-type layer as shown in FIG. 3, and F represents the Lorentz force. It can be seen from Fig.
  • the electrons of the N-type layer are deflected toward the front side of the periphery of the N-type layer by the Lorentz force, and are evenly distributed on the front side of the periphery of the N-type layer.
  • extending the perimeter of the N-type layer The current on the front side does not require the provision of a strip section on the front side of the periphery of the N-type layer, reducing the arrangement of the strip sections, as shown in FIG.
  • the solid line in Fig. 4 indicates the contact and the strip section (N-type electrode) provided on the N-type layer, and the broken line indicates the strip section which is removed. As can be seen from FIG.
  • the strip section of the LED provided by the embodiment of the invention is reduced, the light absorbing material used for the N-type electrode is reduced, and the absorption of light emitted by the illuminating layer by the N-type electrode is reduced, and the LED is illuminated.
  • the efficiency has increased.
  • a spiral coil is disposed between the permanent substrate and the metal reflective layer, and a center line of the spiral coil is parallel to a direction in which the layers of the light emitting diode are formed.
  • a magnetic field is formed in the spiral coil, according to Hall effect, the electrons of the N-type layer are deflected toward the side of the N-type layer by the Lorentz force, so that the electrons of the N-type layer are evenly distributed on one side of the periphery of the N-type layer under the action of the Lorentz force.
  • the LED chip Dispersing the current in the N-type layer, promoting the expansion of the current, the LED chip is easier to emit light, and the N-type electrode can reduce the strip-shaped section provided for expanding the current, thereby reducing the use of the light-absorbing material used for the electrode, and further The absorption of light emitted by the N-type electrode to the luminescent layer is reduced, and the LED chip electrode design is combined to improve the luminous efficiency of the LED.
  • the P-type electrode is in contact with the metal reflective layer, and the hole current spreadability of the P-type layer is good, and the metal reflective layer reflects the light emitted by the light-emitting layer, thereby further improving the luminous efficiency of the LED.
  • Embodiments of the present invention provide a method for fabricating a light emitting diode. Referring to FIG. 5, the manufacturing method includes:
  • Step 201 sequentially growing an N-type layer, a light-emitting layer, and a P-type layer on the temporary substrate to form an epitaxial layer.
  • FIG. 6a is a schematic structural diagram of an LED after the step 201 is performed.
  • 11 denotes a temporary substrate
  • 9 denotes an N-type layer
  • 8 denotes a light-emitting layer
  • 7 denotes a P-type layer.
  • the temporary substrate may be made of one or more of sapphire, AlN, SiC, GaN.
  • Step 202 Form a metal reflective layer on the P-type layer.
  • FIG. 6b is a schematic structural diagram of an LED after the step 202 is performed.
  • 11 denotes a temporary substrate
  • 9 denotes an N-type layer
  • 8 denotes a light-emitting layer
  • 7 denotes a P-type layer
  • 6 denotes a metal reflective layer.
  • the metal reflective layer may be made of one or more of ITO/Ag, Ag, Al, Au, Pt, Rh.
  • the metal reflective layer is made of the above materials, on the one hand, a good ohmic contact can be formed with the P-type layer, and on the other hand, the metal reflective layer has a high emissivity and the reflectance can exceed 80%.
  • the metal reflective layer may have a thickness of from 1 to 5 microns.
  • Step 203 forming a second insulating layer on the metal reflective layer.
  • the second insulating layer is provided with a through hole along the forming direction of each layer of the LED.
  • FIG. 6c is a schematic structural diagram of an LED after the step 203 is performed.
  • 11 denotes a temporary substrate
  • 9 denotes an N-type layer
  • 8 denotes a light-emitting layer
  • 7 denotes a P-type layer
  • 6 denotes a metal reflective layer
  • 5 denotes a second insulating layer.
  • Step 204 Form a spiral coil on the second insulating layer.
  • the center line of the spiral coil is parallel to the forming direction of each layer of the LED, and one end of the spiral coil is connected to the metal reflective layer through the through hole in the second insulating layer.
  • the second insulating layer is provided with a through hole along the forming direction of each layer of the LED; on the other hand, the spiral coil and the metal reflective layer are both formed by electron gun evaporation, so that the spiral is easily One end of the coil is connected to the metal reflective layer through a through hole in the second insulating layer.
  • FIG. 6d is a schematic structural diagram of an LED after the step 204 is performed.
  • 11 denotes a temporary substrate
  • 9 denotes an N-type layer
  • 8 denotes a light-emitting layer
  • 7 denotes a P-type layer
  • 6 denotes a metal reflective layer
  • 5 denotes a second insulating layer
  • 4 denotes a spiral coil.
  • the step 204 may include:
  • the remaining photoresist and the metal film on the photoresist are stripped to form a spiral coil.
  • the spiral coil may be made of one or more of Au, Al, Cu, Ag, Fe, Ti.
  • the spiral coil may have a height of 1-10 microns.
  • Step 205 forming a first insulating layer on the spiral coil.
  • the first insulating layer is provided with a through hole along the forming direction of each layer of the LED, and the through hole in the first insulating layer leads to the other end of the spiral coil.
  • FIG. 6e is a schematic structural diagram of an LED after the step 205 is performed.
  • 11 denotes a temporary substrate
  • 9 denotes an N-type layer
  • 8 denotes a light-emitting layer
  • 7 denotes a P-type layer
  • 6 denotes a metal reflective layer
  • 5 denotes a second insulating layer
  • 4 denotes a spiral coil
  • 3 denotes a first insulating layer.
  • the first insulating layer may be made of SiO 2 or SiN x
  • the second insulating layer may be made of SiO 2 or SiN x .
  • the first insulating layer may have a thickness of 1-10 micrometers
  • the second insulating layer may have a thickness of 1-10 micrometers.
  • Step 206 Bonding the permanent substrate to the first insulating layer through the bonding layer.
  • the bonding layer is connected to the other end of the spiral coil passing through the first insulating layer, and the bonding layer and the permanent substrate are both made of a non-insulating material.
  • FIG. 6f is a schematic structural diagram of the LED after the step 206 is performed.
  • 11 denotes a temporary substrate
  • 9 denotes an N-type layer
  • 8 denotes a light-emitting layer
  • 7 denotes a P-type layer
  • 6 denotes a metal reflective layer
  • 5 denotes a second insulating layer
  • 4 denotes a spiral coil
  • 3 denotes a first insulating layer
  • 2 denotes an adhesive layer
  • 1 denotes a permanent substrate.
  • the first insulating layer is provided with a through hole along the forming direction of each layer of the LED; on the other hand, the coil, the adhesive layer and the spiral coil are all formed by electron gun evaporation, so it is easy
  • the bonding layer is connected to the other end of the spiral coil through a through hole in the first insulating layer.
  • the permanent substrate may be made of one or more of Si, SiC, Cu, Mo, and CuW.
  • the bonding layer may be made of one or more of AuSn, Au, Ti, In, InAu.
  • Step 207 Invert the epitaxial layer to remove the temporary substrate.
  • FIG. 6g is a schematic structural diagram of the LED after the step 207 is performed.
  • 9 represents an N-type layer
  • 8 represents a light-emitting layer
  • 7 represents a P-type layer
  • 6 represents a metal reflective layer
  • 5 represents a second insulating layer
  • 4 represents a spiral coil
  • 3 represents a first insulating layer
  • 2 represents a bonding layer.
  • 1 indicates a permanent substrate.
  • Step 208 An N-type electrode is disposed on the N-type layer.
  • FIG. 6h is a schematic structural diagram of the LED after the step 208 is performed.
  • 9 represents an N-type layer
  • 8 represents a light-emitting layer
  • 7 represents a P-type layer
  • 6 represents a metal reflective layer
  • 5 represents a second insulating layer
  • 4 represents a spiral coil
  • 3 represents a first insulating layer
  • 2 represents a bonding layer.
  • 1 indicates a permanent substrate
  • 10 indicates an N-type electrode.
  • the N-type electrode may be made of one or more of Au, Al, Cu, Ag, Fe, Ti, Cr, Pt.
  • a spiral coil is disposed between the permanent substrate and the metal reflective layer, and a center line of the spiral coil is parallel to a direction in which the layers of the light emitting diode are formed.
  • a magnetic field is formed in the spiral coil, according to Hall effect, the electrons of the N-type layer are deflected toward the side of the N-type layer by the Lorentz force, so that the electrons of the N-type layer are evenly distributed on one side of the periphery of the N-type layer under the action of the Lorentz force.
  • the LED chip Dispersing the current in the N-type layer, promoting the expansion of the current, the LED chip is easier to emit light, and the N-type electrode can reduce the strip-shaped section provided for expanding the current, thereby reducing the use of the light-absorbing material used for the electrode, and further The absorption of light emitted by the N-type electrode to the luminescent layer is reduced, and the LED chip electrode design is combined to improve the luminous efficiency of the LED.
  • the P-type electrode is in contact with the metal reflective layer, and the hole current spreadability of the P-type layer is good, and the metal reflective layer reflects the light emitted by the light-emitting layer, thereby further improving the luminous efficiency of the LED.

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Abstract

一种发光二极管及其制造方法，发光二极管包括永久基板（1）以及依次形成在永久基板上的粘结层（2）、第一绝缘层（3）、螺旋形线圈（4）、第二绝缘层（5）、金属反射层（6）、P型层（7）、发光层（8）、N型层（9）和N型电极（10），螺旋形线圈的中心线与发光二极管各层的形成方向平行，螺旋形线圈的一端穿过第二绝缘层与金属反射层连接，螺旋形线圈的另一端穿过第一绝缘层与粘结层连接，粘结层和永久基板均采用非绝缘材料制成。通过螺旋形线圈形成一个磁场，N型层的电子朝向N型层周边的一侧偏转，使得N型层的电子在洛伦兹力的作用下均匀分布在N型层周边的一侧，分散了N型层中的电流，提高了LED的发光效率。

Description

一种发光二极管及其制造方法 技术领域
本发明涉及半导体技术领域，特别涉及一种发光二极管及其制造方法。
背景技术
发光二极管(Light Emitting Diode，简称LED)是一种半导体发光器件，被广泛用于指示灯、显示屏等。白光LED是继白炽灯和日光灯之后的第三代电光源，白光LED的能耗仅为白炽灯的八分之一，荧光灯的二分之一，寿命可长达十万小时，对于普通家庭照明可谓“一劳永逸”。
现有的LED包括衬底和层叠在衬底上的外延层，外延层包括依次层叠在衬底上的N型层、发光层、P型层，外延层上开设有从P型层延伸到N型层的凹槽，P型层上设有P型电极，N型层上设有N型电极。
在实现本发明的过程中，发明人发现现有技术至少存在以下问题：
外延层为半导体，P型电极和N型电极一般为导体，导体的载流子(包括电子和空穴)迁移率远大于半导体，为了分散外延层中的电流，使得外延层中的载流子均匀分布，通常将P型电极和/或N型电极设计为包括一个靠近外延层周边的接点和至少一个与该接点电连接的条形区段，一个电极(P型电极或N型电极)的条形区段自该电极的接点向外延伸并朝向另一个电极的接点。由于电极(P型电极和N型电极)采用了吸光材料，条形区域在增加了电流扩展的情况下，也同时吸收了外延层发出的光，降低了LED的发光效率。
发明内容
为了解决现有技术由于条形区域吸收外延层发出的光而降低LED发光效率的问题，本发明实施例提供了一种发光二极管及其制造方法。所述技术方案如下：
一方面，本发明实施例提供了一种发光二极管，所述发光二极管包括永久基板、以及依次形成在所述永久基板上的粘结层、第一绝缘层、螺旋形线圈、第二绝缘层、金属反射层、P型层、发光层、N型层和N型电极，所述 螺旋形线圈的中心线与所述发光二极管各层的形成方向平行，所述螺旋形线圈的一端穿过所述第二绝缘层与所述金属反射层连接，所述螺旋形线圈的另一端穿过所述第一绝缘层与所述粘结层连接，所述粘结层和所述永久基板均采用非绝缘材料制成。
可选地，所述螺旋形线圈采用Au、Al、Cu、Ag、Fe、Ti中的一种或多种制成。
可选地，所述螺旋形线圈的高度为1-10微米。
可选地，所述第一绝缘层采用SiO2或者SiNx制成，所述第二绝缘层采用SiO2或者SiNx制成。
可选地，所述第一绝缘层的厚度为1-10微米，所述第二绝缘层的厚度为1-10微米。
另一方面，本发明实施例提供了一种发光二极管的制造方法，所述制造方法包括：
在临时基板上依次生长N型层、发光层、P型层，形成外延层；
在所述P型层上形成金属反射层；
在所述金属反射层上形成第二绝缘层，所述第二绝缘层中设有一个沿所述发光二极管各层的形成方向的通孔；
在所述第二绝缘层上形成螺旋形线圈，所述螺旋形线圈的中心线与所述发光二极管各层的形成方向平行，所述螺旋形线圈的一端穿过所述第二绝缘层中的通孔与所述金属反射层连接；
在所述螺旋形线圈上形成第一绝缘层，所述第一绝缘层中设有一个沿所述发光二极管各层的形成方向的通孔，所述第一绝缘层中的通孔通向所述螺旋形线圈的另一端；
通过粘结层将永久基板粘连在所述第一绝缘层上，所述粘结层穿过所述第一绝缘层中的通孔与所述螺旋形线圈的另一端连接，所述粘结层和所述永久基板均采用非绝缘材料制成；
将所述外延层倒置，去除所述临时基板；
在所述N型层上设置N型电极。
可选地，所述在所述第二绝缘层上形成螺旋形线圈，包括：
在所述第二绝缘层上覆盖一层光刻胶；
在螺旋形的光刻板遮挡光刻胶的情况下，对光刻胶进行曝光；
采用显影溶液腐蚀曝光后的光刻胶，去除螺旋形的光刻胶；
采用电子枪蒸镀一层金属膜；
剥离剩余的光刻胶及光刻胶上的金属膜，形成螺旋形线圈。
可选地，所述螺旋形线圈采用Au、Al、Cu、Ag、Fe、Ti中的一种或多种制成。
可选地，所述螺旋形线圈的高度为1-10微米。
可选地，所述第一绝缘层采用SiO2或者SiNx制成，所述第二绝缘层采用SiO2或者SiNx制成。
本发明实施例提供的技术方案带来的有益效果是：
通过在永久基板和金属反射层之间设置螺旋形线圈，螺旋形线圈的中心线与发光二极管各层的形成方向平行，当发光二极管通电时，螺旋形线圈中形成一个磁场，根据霍尔效应，N型层的电子受到洛伦兹力而朝向N型层周边的一侧偏转，使得N型层的电子在洛伦兹力的作用下均匀分布在N型层周边的一侧，分散了N型层中的电流，促进了电流的扩展，LED芯片更容易发光，而且，N型电极可以减少为了扩展电流而设置的条形区段，减少了电极采用的吸光材料的使用，进而减少了N型电极对发光层发出的光的吸收，结合LED芯片电极设计，提高了LED的发光效率。同时，P型电极与金属反射层接触，P型层的空穴电流扩展性好，同时金属反射层将发光层发出的光反射出去，进一步提高了LED的发光效率。
附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本发明实施例一提供的一种发光二极管的结构示意图；
图2是本发明实施例一提供的螺旋形线圈的俯视图；
图3是本发明实施例一提供的N型层的电子的受力示意图；
图4是本发明实施例一提供的N型电极的示意图；
图5是本发明实施例二提供的一种发光二极管的制造方法的流程图；
图6a-图6h是本发明实施例二提供的制造发光二极管的过程中发光二极管的结构示意图。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚，下面将结合附图对本发明实施方式作进一步地详细描述。
实施例一
本发明实施例提供了一种发光二极管，参见图1，该发光二极管包括永久基板1、以及依次形成在永久基板1上的粘结层2、第一绝缘层3、螺旋形线圈4、第二绝缘层5、金属反射层6、P型层7、发光层8、N型层9和N型电极10。
其中，螺旋形线圈4的中心线与发光二极管各层的形成方向平行，螺旋形线圈4的一端穿过第二绝缘层5与金属反射层6连接，螺旋形线圈4的另一端穿过第一绝缘层3与粘结层2连接。粘结层2和永久基板1均采用非绝缘材料制成。
在具体实现中，一方面第二绝缘层5中(如大概中间位置)设有一个沿LED各层的形成方向的通孔，另一方面，螺旋形线圈4和金属反射层6均采用电子枪蒸镀法制成，因此很容易将螺旋形线圈4的一端穿过第二绝缘层5中的通孔与金属反射层6连接。
具体地，形成螺旋形线圈4时，先在第二绝缘层覆盖一层光刻胶，再利用螺旋形光刻板进行曝光，接着利用显影溶液去掉螺旋形区域内的光刻胶，然后进行电子枪蒸镀一层金属膜，最后剥离剩余的光刻胶及光刻胶上的金属膜，即可形成螺旋形线圈，金属膜的厚度即为螺旋形线圈的高度。
同样地，一方面第一绝缘层3中(如靠近周边位置)也设有一个沿LED各层的形成方向的通孔，另一方面，粘合层2也是采用电子枪蒸镀法制成，因此很容易将螺旋形线圈4的另一端穿过第一绝缘层3中的通孔与粘结层2连接。
在本实施例的一种实现方式中，螺旋形线圈4可以采用Au、Al、Cu、Ag、Fe、Ti中的一种或多种制成。
可选地，螺旋形线圈4的高度可以为1-10微米。
在本实施例的另一种实现方式中，第一绝缘层3可以采用SiO2或者SiNx制成，第二绝缘层5可以采用SiO2或者SiNx制成。
可选地，第一绝缘层3的厚度可以为1-10微米，第二绝缘层5的厚度可以为1-10微米。
在本实施例的又一种实现方式中，金属反射层6可以采用ITO/Ag、Ag、Al、Au、Pt、Rh中的一种或多种制成。容易知道，当金属反射层6采用前述材料制成时，一方面与P型层7之间形成好的欧姆接触，另一方面金属反射层6具有高发射率，反射率可以超过80％。
可选地，金属反射层6的厚度可以为1-5微米。
在本实施例的又一种实现方式中，N型电极10可以采用Au、Al、Cu、Ag、Fe、Ti、Cr、Pt中的一种或多种制成。
在本实施例的又一种实现方式中，粘结层2可以采用AuSn、Au、Ti、In、InAu中的一种或多种制成。
在本实施例的又一种实现方式中，永久基板1可以采用Si、SiC、Cu、Mo、CuW中的一种或多种制成。
下面结合图2-图4对本发明实施例如何实现电流的扩展进行简单说明：
图2为螺旋形线圈4的俯视图，图2中A表示电场，箭头表示电场方向，B表示磁场，叉叉表示磁场方向。从图2可以看出，在螺旋形线圈通电时，基于电流的磁效应，螺旋形线圈中产生沿LED各层的形成方向的磁场。具体地，将永久基板作为P型电极接电源的正极，N型电极接电源的负极，由于依次电连接的永久基板、粘结层、螺旋形线圈、金属反射层、P型层、发光层、N型层、N型电极均采用非绝缘材料制成，因此在电源的作用下，螺旋形线圈中即可通电，产生磁场。
图3为N型层的电子的受力示意图，图3中B表示磁场，v表示电子的运动方向(与N型电极和P型电极的设置位置有关，例如在图1中，N型电极设置在N型层周边的右侧，则电子的运动方向为图3所示的从N型层周边的右侧向N型层周边的左侧)，F表示洛伦兹力。从图3可以看出，在磁场产生之后，根据霍尔效应，N型层的电子在洛伦兹力的作用下向N型层周边的前侧偏转，均匀分布在N型层周边的前侧，扩展了N型层周边 的前侧的电流，因此不需要在N型层周边的前侧上设置条形区段，减少了条形区段的设置，如图4所示。图4中实线表示N型层上设置的接点和条形区段(N型电极)，虚线表示去掉的条形区段。从图4可以看出，本发明实施例提供的发光二极管的条形区段减少了，N型电极采用的吸光材料减少了，N型电极对发光层发出的光的吸收减少了，LED的发光效率提高了。
本发明实施例通过在永久基板和金属反射层之间设置螺旋形线圈，螺旋形线圈的中心线与发光二极管各层的形成方向平行，当发光二极管通电时，螺旋形线圈中形成一个磁场，根据霍尔效应，N型层的电子受到洛伦兹力而朝向N型层周边的一侧偏转，使得N型层的电子在洛伦兹力的作用下均匀分布在N型层周边的一侧，分散了N型层中的电流，促进了电流的扩展，LED芯片更容易发光，而且，N型电极可以减少为了扩展电流而设置的条形区段，减少了电极采用的吸光材料的使用，进而减少了N型电极对发光层发出的光的吸收，结合LED芯片电极设计，提高了LED的发光效率。同时，P型电极与金属反射层接触，P型层的空穴电流扩展性好，同时金属反射层将发光层发出的光反射出去，进一步提高了LED的发光效率。
实施例二
本发明实施例提供了一种发光二极管的制造方法，参见图5，该制造方法包括：
步骤201：在临时基板上依次生长N型层、发光层、P型层，形成外延层。
图6a为步骤201执行之后的LED的结构示意图。其中，11表示临时基板，9表示N型层，8表示发光层，7表示P型层。
可选地，临时基板可以采用蓝宝石、AlN、SiC、GaN中的一种或多种制成。
步骤202：在P型层上形成金属反射层。
图6b为步骤202执行之后的LED的结构示意图。其中，11表示临时基板，9表示N型层，8表示发光层，7表示P型层，6表示金属反射层。
可选地，金属反射层可以采用ITO/Ag、Ag、Al、Au、Pt、Rh中的一种或多种制成。
可以理解地，金属反射层采用上述材料制成，一方面可以与P型层之间形成好的欧姆接触，另一方面使得金属反射层具有高发射率，反射率可以超过80％。
可选地，金属反射层的厚度可以为1-5微米。
步骤203：在金属反射层上形成第二绝缘层。
其中，第二绝缘层中设有一个沿LED各层的形成方向的通孔。
图6c为步骤203执行之后的LED的结构示意图。其中，11表示临时基板，9表示N型层，8表示发光层，7表示P型层，6表示金属反射层，5表示第二绝缘层。
步骤204：在第二绝缘层上形成螺旋形线圈。
其中，螺旋形线圈的中心线与LED各层的形成方向平行，螺旋形线圈的一端穿过第二绝缘层中的通孔与金属反射层连接。
在具体实现中，一方面第二绝缘层中设有一个沿LED各层的形成方向的通孔，另一方面，螺旋形线圈和金属反射层均采用电子枪蒸镀法制成，因此很容易将螺旋形线圈的一端穿过第二绝缘层中的通孔与金属反射层连接。
图6d为步骤204执行之后的LED的结构示意图。其中，11表示临时基板，9表示N型层，8表示发光层，7表示P型层，6表示金属反射层，5表示第二绝缘层，4表示螺旋形线圈。
具体地，该步骤204可以包括：
在第二绝缘层上覆盖一层光刻胶；
在螺旋形的光刻板遮挡光刻胶的情况下，对光刻胶进行曝光；
采用显影溶液腐蚀曝光后的光刻胶，去除螺旋形的光刻胶；
采用电子枪蒸镀一层金属膜；
剥离剩余的光刻胶及光刻胶上的金属膜，形成螺旋形线圈。
可选地，螺旋形线圈可以采用Au、Al、Cu、Ag、Fe、Ti中的一种或多种制成。
可选地，螺旋形线圈的高度可以为1-10微米。
步骤205：在螺旋形线圈上形成第一绝缘层。
其中，第一绝缘层中设有一个沿LED各层的形成方向的通孔，第一绝缘层中的通孔通向螺旋形线圈的另一端。
图6e为步骤205执行之后的LED的结构示意图。其中，11表示临时基板，9表示N型层，8表示发光层，7表示P型层，6表示金属反射层，5表示第二绝缘层，4表示螺旋形线圈，3表示第一绝缘层。
可选地，第一绝缘层可以采用SiO2或者SiNx制成，第二绝缘层可以采用SiO2或者SiNx制成。
可选地，第一绝缘层的厚度可以为1-10微米，第二绝缘层的厚度可以为1-10微米。
步骤206：通过粘结层将永久基板粘连在第一绝缘层上。
其中，粘结层与穿过第一绝缘层的螺旋形线圈的另一端连接，粘结层和永久基板均采用非绝缘材料制成。
图6f为步骤206执行之后的LED的结构示意图。其中，11表示临时基板，9表示N型层，8表示发光层，7表示P型层，6表示金属反射层，5表示第二绝缘层，4表示螺旋形线圈，3表示第一绝缘层，2表示粘结层，1表示永久基板。
在具体实现中，一方面第一绝缘层中设有一个沿LED各层的形成方向的通孔，另一方面，线圈和粘合层和螺旋形线圈均采用电子枪蒸镀法制成，因此很容易将粘结层穿过第一绝缘层中的通孔与螺旋形线圈的另一端连接。
在本实施例的一种实现方式中，永久基板可以采用Si、SiC、Cu、Mo、CuW中的一种或多种制成。
在本实施例的另一种实现方式中，粘结层可以采用AuSn、Au、Ti、In、InAu中的一种或多种制成。
步骤207：将所外延层倒置，去除临时基板。
图6g为步骤207执行之后的LED的结构示意图。其中，9表示N型层，8表示发光层，7表示P型层，6表示金属反射层，5表示第二绝缘层，4表示螺旋形线圈，3表示第一绝缘层，2表示粘结层，1表示永久基板。
步骤208：在N型层上设置N型电极。
图6h为步骤208执行之后的LED的结构示意图。其中，9表示N型层，8表示发光层，7表示P型层，6表示金属反射层，5表示第二绝缘层，4表示螺旋形线圈，3表示第一绝缘层，2表示粘结层，1表示永久基板，10表示N型电极。
可选地，N型电极可以采用Au、Al、Cu、Ag、Fe、Ti、Cr、Pt中的一种或多种制成。
本发明实施例通过在永久基板和金属反射层之间设置螺旋形线圈，螺旋形线圈的中心线与发光二极管各层的形成方向平行，当发光二极管通电时，螺旋形线圈中形成一个磁场，根据霍尔效应，N型层的电子受到洛伦兹力而朝向N型层周边的一侧偏转，使得N型层的电子在洛伦兹力的作用下均匀分布在N型层周边的一侧，分散了N型层中的电流，促进了电流的扩展，LED芯片更容易发光，而且，N型电极可以减少为了扩展电流而设置的条形区段，减少了电极采用的吸光材料的使用，进而减少了N型电极对发光层发出的光的吸收，结合LED芯片电极设计，提高了LED的发光效率。同时，P型电极与金属反射层接触，P型层的空穴电流扩展性好，同时金属反射层将发光层发出的光反射出去，进一步提高了LED的发光效率。
上述本发明实施例序号仅仅为了描述，不代表实施例的优劣。
以上所述仅为本发明的较佳实施例，并不用以限制本发明，凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。

Claims (10)

  1. 一种发光二极管，其特征在于，所述发光二极管包括永久基板、以及依次形成在所述永久基板上的粘结层、第一绝缘层、螺旋形线圈、第二绝缘层、金属反射层、P型层、发光层、N型层和N型电极，所述螺旋形线圈的中心线与所述发光二极管各层的形成方向平行，所述螺旋形线圈的一端穿过所述第二绝缘层与所述金属反射层连接，所述螺旋形线圈的另一端穿过所述第一绝缘层与所述粘结层连接，所述粘结层和所述永久基板均采用非绝缘材料制成。
  2. 根据权利要求1所述的发光二极管，其特征在于，所述螺旋形线圈采用Au、Al、Cu、Ag、Fe、Ti中的一种或多种制成。
  3. 根据权利要求1所述的发光二极管，其特征在于，所述螺旋形线圈的高度为1-10微米。
  4. 根据权利要求1所述的发光二极管，其特征在于，所述第一绝缘层采用SiO2或者SiNx制成，所述第二绝缘层采用SiO2或者SiNx制成。
  5. 根据权利要求1所述的发光二极管，其特征在于，所述第一绝缘层的厚度为1-10微米，所述第二绝缘层的厚度为1-10微米。
  6. 一种发光二极管的制造方法，其特征在于，所述制造方法包括：
    在临时基板上依次生长N型层、发光层、P型层，形成外延层；
    在所述P型层上形成金属反射层；
    在所述金属反射层上形成第二绝缘层，所述第二绝缘层中设有一个沿所述发光二极管各层的形成方向的通孔；
    在所述第二绝缘层上形成螺旋形线圈，所述螺旋形线圈的中心线与所述发光二极管各层的形成方向平行，所述螺旋形线圈的一端穿过所述第二绝缘层中的通孔与所述金属反射层连接；
    在所述螺旋形线圈上形成第一绝缘层，所述第一绝缘层中设有一个沿所述发光二极管各层的形成方向的通孔，所述第一绝缘层中的通孔通向所述螺旋形线圈的另一端；
    通过粘结层将永久基板粘连在所述第一绝缘层上，所述粘结层穿过所述第一绝缘层中的通孔与所述螺旋形线圈的另一端连接，所述粘结层和所述永久基板均采用非绝缘材料制成；
    将所述外延层倒置，去除所述临时基板；
    在所述N型层上设置N型电极。
  7. 根据权利要求6所述的制造方法，其特征在于，所述在所述第二绝缘层上形成螺旋形线圈，包括：
    在所述第二绝缘层上覆盖一层光刻胶；
    在螺旋形的光刻板遮挡光刻胶的情况下，对光刻胶进行曝光；
    采用显影溶液腐蚀曝光后的光刻胶，去除螺旋形的光刻胶；
    采用电子枪蒸镀一层金属膜；
    剥离剩余的光刻胶及光刻胶上的金属膜，形成螺旋形线圈。
  8. 根据权利要求6所述的制造方法，其特征在于，所述螺旋形线圈采用Au、Al、Cu、Ag、Fe、Ti中的一种或多种制成。
  9. 根据权利要求6所述的制造方法，其特征在于，所述螺旋形线圈的高度为1-10微米。
  10. 根据权利要求6所述的制造方法，其特征在于，所述第一绝缘层采用SiO2或者SiNx制成，所述第二绝缘层采用SiO2或者SiNx制成。
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