WO2016098912A1 - Réseau de capteurs pour caméra à ouvertures multiples, et son procédé de fonctionnement - Google Patents

Réseau de capteurs pour caméra à ouvertures multiples, et son procédé de fonctionnement Download PDF

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Publication number
WO2016098912A1
WO2016098912A1 PCT/KR2014/012313 KR2014012313W WO2016098912A1 WO 2016098912 A1 WO2016098912 A1 WO 2016098912A1 KR 2014012313 W KR2014012313 W KR 2014012313W WO 2016098912 A1 WO2016098912 A1 WO 2016098912A1
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WO
WIPO (PCT)
Prior art keywords
cell
cells
rgb
photodiode
column
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Application number
PCT/KR2014/012313
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English (en)
Korean (ko)
Inventor
Vo le CUONG
Original Assignee
재단법인 다차원 스마트 아이티 융합시스템 연구단
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Priority to PCT/KR2014/012313 priority Critical patent/WO2016098912A1/fr
Publication of WO2016098912A1 publication Critical patent/WO2016098912A1/fr

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
    • H04N23/12—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths with one sensor only
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors

Definitions

  • the present invention relates to a sensor array of a multi aperture camera.
  • the present invention relates to a signal array for an IR signal processed by an infrared cell included in a sensor array by changing a physical structure of the sensor array. It is a technique to improve the signal to noise ratio (SNR).
  • SNR signal to noise ratio
  • the existing sensor array is formed to include the IR cell 120 and the RGB cells 130 within the set 110. do.
  • the IR cell 120 and the RBG cells 130 included in the sensor array are operated on a row basis.
  • the cells may be operated at the same time for each cell located in the same furnace (for example, since the G cell 131 and the R cell 132 are included in the first furnace 140, the cells may be operated simultaneously and the B cell 133 may be operated at the same time). And since the IR cell 120 is included in the second furnace 150, it can be operated simultaneously).
  • the signal-to-noise ratio for the IR signal to be processed has a disadvantage.
  • IR we propose a technique to improve the signal-to-noise ratio for IR signals processed by cells.
  • embodiments of the present invention by simply changing the physical structure of the photodiode included in the cell located in the same row or column of the GB cells, the cell located in the same row or column of the IR cells of the RGB cells Provided are a sensor array and a method of operating the same, which reduce an effective light receiving area of a photodiode included in a.
  • At least a portion of the photodiode may be located at least one of the top, bottom, left side, or right side of the photodiode.
  • the enlarged light blocking metal covering at least a portion of the photodiode may be adaptively changed in at least one of position and size.
  • a photodiode included in each of the IR cells and cells located in the same row or column as the IR cell among the RGB cells is included in each of the cells of the RGB cells that are not located in the same row or column as the IR cell. It may be exposed to the optical signal for a longer time.
  • the photodiode included in the IR cell is located in a photodiode or a cell located in the same row or column as the IR cell among the RGB cells among the RGB cells. At least one of the included photodiodes may have a higher gain.
  • a method of operating a sensor array of a multi aperture camera includes processing RGB signals in red-green-blue (RGB) cells, respectively; And processing an IR signal in an IR (infrared) cell, wherein processing the RGB signals in the RGB cells, respectively, is located in the same row or column as the IR cell of the RGB cells.
  • At least a portion of the photodiode may be located at least one of the top, bottom, left side, or right side of the photodiode.
  • the step of introducing an optical signal corresponding to a cell located in the same furnace or column as the IR cell may include an enlarged light blocking covering at least a portion of a photodiode included in a cell located in the same furnace or column as the IR cell.
  • the method may further include adaptively changing at least one of the position or the size of the metal.
  • the step of introducing an optical signal corresponding to a cell located in the same furnace or column as the IR cell may include a photodiode included in a cell located in the same furnace or column as the IR cell, the same as the IR cell among the RGB cells. Or exposing to an optical signal for a longer time than the photodiode included in each of the cells not located in the column.
  • the processing of the IR signal in the IR cell may include applying a photodiode included in the IR cell to an optical signal for a longer time than a photodiode included in each of the RGB cells which are not located in the same row or column as the IR cell. Exposing step.
  • the processing of the IR signal by the IR cell may include the photodiode included in the IR cell, the photodiode included in each of the RGB cells among the cells not located in the same row or column as the IR cell, or the IR among the RGB cells.
  • the method may include processing the IR signal to have a gain higher than at least one of photodiodes included in a cell positioned in the same row or column as a cell.
  • Embodiments of the present invention reduce the light-receiving effective area of the photodiode included in a cell located in the same row or column as the IR cell among the RGB cells, and a cell located in the same row or column as the IR cell among the IR cell and the RGB cells.
  • By increasing the exposure time of the present invention it is possible to provide a sensor array that improves the signal-to-noise ratio for an IR signal processed by an IR cell and a method of operating the same.
  • FIG. 1 is a diagram illustrating cells included in a sensor array of a conventional multi aperture camera.
  • FIG. 2 is a diagram illustrating the structure of each of the RGB cells and IR cells included in the sensor array of the conventional multi-aperture camera.
  • FIG 3 is a view showing the structure of a cell located in the same furnace as the IR cell of the RGB cells according to an embodiment of the present invention.
  • FIG. 4 is a cross-sectional view illustrating a structure of a cell located in the same furnace as the IR cell among the RGB cells shown in FIG. 3.
  • FIG. 5 is a diagram illustrating a light receiving effective area of a photodiode included in a cell located in the same furnace as an IR cell among RGB cells according to an embodiment of the present invention.
  • FIG 3 is a view showing the structure of a cell located in the same furnace as the IR cell of the RGB cells according to an embodiment of the present invention.
  • a cell located in the same furnace as an IR cell among RGB cells included in a sensor array includes a photodiode with reduced light receiving effective area.
  • a cell located in the same row as the IR cell among the RGB cells may mean a cell located in the same column as the IR cell among the RGB cells.
  • the photodiode 310 included in the cell located in the same row as the IR cell among the RGB cells is covered by the enlarged light blocking metal 320, thereby receiving the photodiode 310.
  • the effective area can be reduced.
  • at least some region 311 of the photodiode 310 may be located in various regions with respect to the photodiode 310. Detailed description thereof will be described with reference to FIG. 5.
  • At least one of a position or a size of the enlarged light blocking metal 320 covering at least a partial region 311 of the photodiode 310 may be adaptively changed.
  • the photodiode 310 is based on a signal-to-noise ratio for an optical signal processed by a cell located in the same furnace as the IR cell among the RGB cells to be obtained, compared to the signal-to-noise ratio for an IR signal processed by the IR cell.
  • At least one of a position or a size of the enlarged light blocking metal 320 covering at least a portion of the region 311 may be adaptively changed.
  • the enlarged light blocking metal 320 covering at least a part of the region 311 of the photodiode 310 may have a signal-to-noise ratio of less than the signal-to-noise ratio for the IR signal processed by the IR cell. At least one of the position or the size may be adaptively changed to acquire the cell located in the same furnace as the IR cell.
  • a cell located in the same furnace as the IR cell among the RGB cells may perform an operation of the source follower transistor 330, the photodiode 310, and the source follower transistor 330 that output an electric signal from the incoming optical signal.
  • a row selection transistor 340 for selecting a furnace in which the cell is located and a reset transistor 350 for resetting the operation of the cell may be included.
  • the source follower transistor 330, the row select transistor 340, and the reset transistor 350 may be covered from the optical signal by the enlarged light blocking metal 320.
  • the sensor array according to the exemplary embodiment of the present invention may convert at least a portion 311 of the photodiode 310 included in the cell located in the same furnace as the IR cell among the RGB cells to the enlarged light blocking metal 320. By covering, the light receiving effective area of the photodiode 310 can be reduced.
  • the IR cells and the RGB cells are operated on a row basis, and as described above, the physical structure is such that the photodiode 310 included in a cell located in the same row as the IR cell among the RGB cells has a reduced light receiving effective area. Since it has been changed, the sensor array according to an embodiment of the present invention improves the signal-to-noise ratio for the IR signal processed by the IR cell by increasing the exposure time of the cell located in the same furnace as the IR cell among the IR cell and the RGB cells. Can be.
  • the photodiode included in each of the IR cells and the cells located in the same row as the IR cell among the RGB cells is applied to the optical signal for a longer time than the photodiode included in each of the cells located in the same row as the IR cell among the RGB cells.
  • the signal-to-noise ratio for the IR signal processed by the IR cell can be improved.
  • the photodiode 310 included in the cell located in the same furnace as the IR cell among the RGB cells has a light receiving effective area reduced by the enlarged light blocking metal 320, the IR exposed for the same long time. Compared with the photodiode of the cell, the effect of improving the signal-to-noise ratio may be relatively insignificant.
  • the sensor array may improve only the signal-to-noise ratio for the IR signal processed in the IR cell, except for the signal-to-noise ratio for the optical signal processed in the cell located in the same furnace as the IR cell among the RGB cells.
  • the sensor array according to an embodiment of the present invention is that the photodiode included in the IR cell is located in the same row as the IR cell of the photodiode or RGB cells included in each of the cells that are not located in the same row as the IR cell of the RGB cells At least one of the photodiodes 310 included in the cell may have a higher gain. Accordingly, the sensor array excludes the signal-to-noise ratio for an optical signal processed in a cell not located in the same furnace as the IR cell among the RGB cells, or a signal-to-noise ratio for an optical signal processed in a cell located in the same furnace as the IR cell among the RGB cells. Only the signal-to-noise ratio for the IR signal processed by the IR cell can be improved.
  • FIG. 4 is a cross-sectional view illustrating a structure of a cell located in the same furnace as the IR cell among the RGB cells shown in FIG. 3.
  • a cell positioned in the same furnace as the IR cell among the RGB cells may be a silicon substrate 410, a source follower transistor formed on the silicon substrate 410, a furnace select transistor. And a reset transistor, a first metal 420 formed in a column direction, a second metal 430 formed in a row direction, and an enlarged light blocking metal 440.
  • each of the source follower transistor, the row select transistor, and the reset transistor may include an active region 411 generated on the silicon substrate 410 and a polysilicon 412 formed on the active region 411. have.
  • the enlarged light blocking metal 440 is formed closest to the surface exposed to the optical signal, thereby covering at least a portion of the photodiode (not shown in the drawing depending on the position of the cross section). Accordingly, the photodiode is covered by the light blocking metal 440 in which at least a portion of the area is enlarged, thereby having a reduced light receiving effective area. At this time, the photodiode is formed to have the same size as the IR cell and the cell not located in the same row as the IR cell among the RGB cells, but at least a partial area is covered by the enlarged light blocking metal 440, thereby reducing the light receiving effective area Can have
  • a cell and an IR cell which are not located in the same furnace as the IR cell among the RGB cells may include a light blocking metal having a smaller size than the enlarged light blocking metal 440 and are not covered by the light blocking metal. It may include a photodiode having a light receiving effective area as it is formed.
  • FIG. 5 is a diagram illustrating a light receiving effective area of a photodiode included in a cell located in the same furnace as an IR cell among RGB cells according to an embodiment of the present invention.
  • At least some regions of the photodiode 510 included in a cell located in the same furnace as the IR cell among the RGB cells according to an exemplary embodiment of the present invention may be disposed above, below, left, or the photodiode 510. It may be located on at least one of the right side. Therefore, the enlarged light blocking metal 520 may be disposed on at least one of the top, bottom, left, and right sides of the photodiode 510, thereby covering at least a portion of the photodiode 510.
  • the enlarged light blocking metal 520 may cover at least a portion of the upper portion of the photodiode 510 as in the case of (a) or the upper and lower portions of the photodiode 510 as in the case of (b). Cover at least some areas, or (c) cover at least some areas on the left side of the photodiode 510, or (d) cover at least some areas on the left and right sides of the photodiode 510, or , (e) may cover at least some regions of all of the top, bottom, left and right sides of the photodiode 510.
  • the enlarged light blocking metal 520 covers at least a portion of the photodiode 510 located on at least one of the upper side, the lower side, the left side, or the right side of the photodiode 510. Only a simple physical structure of the 510 may be changed to reduce the light receiving effective area of the photodiode 510.
  • FIG. 6 is a flowchart illustrating a method of operating a sensor array according to an exemplary embodiment of the present invention.
  • a sensor array processes RGB signals in red-green-blue (RGB) cells, respectively (610).
  • the sensor array may include at least a portion of the RGB cells covered with an expanding metal light shield so as to reduce an effective light receiving area of the photodiodes included in the same row as the IR cell.
  • an optical signal corresponding to a cell located in the same furnace as the IR cell among the RGB signals is introduced, so that an optical signal corresponding to the corresponding cell among the RGB signals in the cell located in the same furnace as the IR cell among the RGB cells.
  • the sensor array may be enlarged to cover at least a portion of the photodiode included in a cell located in the same furnace as the IR cell in the process of introducing an optical signal corresponding to a cell located in the same furnace as the IR cell.
  • At least one of the position or size of the light blocking metal may be adaptively changed.
  • the sensor array in the process of introducing the optical signal corresponding to the cell located in the same furnace as the IR cell of the RGB signals, the photodiode included in the cell located in the same furnace as the IR cell is the same as the IR cell of the RGB cells
  • the optical signal may be exposed for a longer time than the photodiode included in each of the cells not located in the furnace.
  • the sensor array then processes 620 an IR signal in an infrared (IR) cell.
  • IR infrared
  • the sensor array may expose the photodiode included in the IR cell to the optical signal for a longer time than the photodiode included in each of the cells not located in the same furnace as the IR cell among the RGB cells.
  • the sensor array may include a photodiode included in each of the photodiodes included in the IR cell, which is not located in the same row as the IR cell, or a photodiode included in a cell not located in the same furnace as the IR cell.
  • the IR signal may be processed to have a gain higher than at least one.

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

La présente invention concerne un réseau de capteurs pour une caméra à ouvertures multiples comprenant : des cellules rouges, vertes, et bleues (RVB) de traitement de signaux RVB respectives; et une cellule infrarouge (IR) de traitement d'un signal IR. Au moins une partie de la région d'une photodiode constituée dans une cellule, positionnée dans la même rangée ou colonne que la cellule IR, parmi les cellules RVB est recouverte par un écran métallique élargi de sorte qu'une zone de réception de lumière est réduite.
PCT/KR2014/012313 2014-12-15 2014-12-15 Réseau de capteurs pour caméra à ouvertures multiples, et son procédé de fonctionnement WO2016098912A1 (fr)

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Application Number Priority Date Filing Date Title
PCT/KR2014/012313 WO2016098912A1 (fr) 2014-12-15 2014-12-15 Réseau de capteurs pour caméra à ouvertures multiples, et son procédé de fonctionnement

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Application Number Priority Date Filing Date Title
PCT/KR2014/012313 WO2016098912A1 (fr) 2014-12-15 2014-12-15 Réseau de capteurs pour caméra à ouvertures multiples, et son procédé de fonctionnement

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WO2016098912A1 true WO2016098912A1 (fr) 2016-06-23

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10962647B2 (en) 2016-11-30 2021-03-30 Yujin Robot Co., Ltd. Lidar apparatus based on time of flight and moving object
US11579298B2 (en) 2017-09-20 2023-02-14 Yujin Robot Co., Ltd. Hybrid sensor and compact Lidar sensor
US11874399B2 (en) 2018-05-16 2024-01-16 Yujin Robot Co., Ltd. 3D scanning LIDAR sensor

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970002123B1 (ko) * 1993-03-31 1997-02-22 삼성전자 주식회사 적외선 이미지 센서 및 그 제조방법
KR20010030728A (ko) * 1997-09-26 2001-04-16 피터 엔. 데트킨 픽셀 칼라 응답도를 조절하기 위해 광 차폐층을 사용하기위한 방법 및 장치
KR20020030114A (ko) * 2000-07-18 2002-04-22 이즈하라 요우조우 수광 소자 어레이
JP2004104203A (ja) * 2002-09-05 2004-04-02 Toshiba Corp 固体撮像装置
KR20140111017A (ko) * 2012-01-06 2014-09-17 마이크로소프트 코포레이션 브로드밴드 이미지화기

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970002123B1 (ko) * 1993-03-31 1997-02-22 삼성전자 주식회사 적외선 이미지 센서 및 그 제조방법
KR20010030728A (ko) * 1997-09-26 2001-04-16 피터 엔. 데트킨 픽셀 칼라 응답도를 조절하기 위해 광 차폐층을 사용하기위한 방법 및 장치
KR20020030114A (ko) * 2000-07-18 2002-04-22 이즈하라 요우조우 수광 소자 어레이
JP2004104203A (ja) * 2002-09-05 2004-04-02 Toshiba Corp 固体撮像装置
KR20140111017A (ko) * 2012-01-06 2014-09-17 마이크로소프트 코포레이션 브로드밴드 이미지화기

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10962647B2 (en) 2016-11-30 2021-03-30 Yujin Robot Co., Ltd. Lidar apparatus based on time of flight and moving object
US11579298B2 (en) 2017-09-20 2023-02-14 Yujin Robot Co., Ltd. Hybrid sensor and compact Lidar sensor
US11874399B2 (en) 2018-05-16 2024-01-16 Yujin Robot Co., Ltd. 3D scanning LIDAR sensor

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