WO2016086428A1 - 一种真空离子溅镀靶材装置 - Google Patents

一种真空离子溅镀靶材装置 Download PDF

Info

Publication number
WO2016086428A1
WO2016086428A1 PCT/CN2014/093214 CN2014093214W WO2016086428A1 WO 2016086428 A1 WO2016086428 A1 WO 2016086428A1 CN 2014093214 W CN2014093214 W CN 2014093214W WO 2016086428 A1 WO2016086428 A1 WO 2016086428A1
Authority
WO
WIPO (PCT)
Prior art keywords
target
ion sputtering
vacuum ion
titanium
nickel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2014/093214
Other languages
English (en)
French (fr)
Inventor
周涛
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TCL China Star Optoelectronics Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Priority to US14/416,150 priority Critical patent/US20160155618A1/en
Publication of WO2016086428A1 publication Critical patent/WO2016086428A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target

Definitions

  • the invention relates to the field of vacuum ion sputtering, in particular to a vacuum ion sputtering target device.
  • the working principle of using vacuum sputtering is as follows: mainly using glow discharge (glow Discharge) Argon (Ar) ions are struck against the surface of the target, and atoms of the target are ejected and deposited on the surface of the substrate to form a thin film.
  • glow discharge Glow Discharge
  • Ar Argon
  • the properties and uniformity of the sputtered film are better than those of the vapor deposited film, but the coating speed is much slower than evaporation.
  • most metal coatings use DC sputtering
  • non-conductive ceramic materials use RF AC sputtering.
  • the basic principle is to use glow discharge in vacuum (glow Discharge argon (Ar) ions hit the surface of the target, the cations in the plasma will accelerate toward the surface of the negative electrode as the sputtered material. This impact will cause the material of the target to fly out and deposit on the substrate. A film is formed thereon.
  • glow discharge in vacuum Glow Discharge argon (Ar) ions hit the surface of the target, the cations in the plasma will accelerate toward the surface of the negative electrode as the sputtered material. This impact will cause the material of the target to fly out and deposit on the substrate. A film is formed thereon.
  • the shape of vacuum sputtering targets is usually rectangular, and the new sputtering equipment almost uses a powerful magnet to spiral the electrons to accelerate the ionization of argon around the target, resulting in a collision between the target and the argon ions.
  • the impact probability increases and the sputtering rate is increased. Therefore, the surface of the target that is hit by the ions will form a wave shape, resulting in a relatively low utilization rate of the target, which is generally only about 15%, resulting in a very large waste.
  • the vacuum sputtering target has a rectangular shape, and the surface of the target impacted by the ions forms a wave shape, that is, the shaded portion in FIG. 1 is the portion 10 consumed by the target, so that the remaining portion of the target is A lot is left, that is, the blank portion in Fig. 1 is the remaining portion 20 of the target.
  • the rectangular target causes a very large waste, resulting in a relatively low utilization rate of the target.
  • the black part is the copper back plate 30
  • the remaining part of the other area of the target leaves a lot, but it is necessary to scrap the target, and it is necessary to replace one.
  • the new rectangular target continues the vacuum sputtering operation, causing a very large waste, resulting in a relatively low utilization of the target.
  • a vacuum ion sputtering target device wherein the vacuum ion sputtering target device comprises: a receiving space, a substrate disposed in the receiving space, a magnetron, a target, and a back plate The target is located above the backing plate, the magnetron is disposed under the backing plate, and the substrate is disposed above the target; wherein the shape of the target is according to a magnetic field intensity distribution Setting; wherein the magnetic field strength is large, the target material has a large thickness, and the magnetic field strength is small; the target material has a small thickness; the target is an integrally formed structure;
  • the magnetron generates a magnetic field between the target and the substrate, and when a plasma is disposed in the receiving space, the plasma accelerates bombardment under the action of an electric field
  • the target sputters a large amount of the target atoms, and the target atoms are deposited on the substrate to form a thin film.
  • the lower surface of the target has a wave shape
  • the surface of the back plate has a wave shape
  • the peak top of the lower surface of the target and the back plate The peaks and valleys of the surface match the contacts so that the target and the backsheet are tightly bonded together.
  • the lower surface of the target has a wave-shaped structure having two peaks
  • the surface of the back plate has a wave-shaped structure having two peaks and valleys; the two peaks of the lower surface of the target respectively Embedded in two peaks and valleys on the surface of the backing plate to tightly bond the target and the backing plate together.
  • the upper surface of the target is a flat surface.
  • the wave shape of the lower surface of the target is symmetrically disposed.
  • the thickness and the size of the target can be set according to actual consumption.
  • the target is a metal target, including: titanium target Ti, aluminum target Al, tin target Su, bismuth target Hf, lead target Pb, nickel target Ni, silver target Ag, selenium target Se, bismuth target Be , target Te, carbon target C, vanadium target V, tantalum target Sb, indium target In, boron target B, tungsten target W, manganese target Mn, tantalum target Bi, copper target Cu, silicon target Si, tantalum target Ta, zinc Target Zn, magnesium target Mg, zirconium target Zr, chromium target Cr, stainless steel target SS, ruthenium target Nb, molybdenum target Mo, cobalt target Co, iron target Fe, or ruthenium target Ge.
  • titanium target Ti aluminum target Al
  • tin target Su bismuth target Hf
  • lead target Pb nickel target Ni
  • silver target Ag silver target Ag
  • selenium target Se bismuth target Be
  • target Te carbon target C
  • vanadium target V vanadium target
  • the target is an alloy target, including: iron cobalt target FeCo, aluminum silicon target AlSi, titanium silicon target TiSi, chromium silicon target CrSi, zinc aluminum target ZnAl, titanium zinc target TiZn, titanium aluminum target TiAl Titanium-zirconium target TiZr, titanium-silicon target TiSi, Titanium nickel target TiNi, nickel chromium target NiCr, nickel aluminum target NiAl, nickel vanadium target NiV, or nickel iron target NiFe.
  • iron cobalt target FeCo aluminum silicon target AlSi
  • titanium silicon target TiSi titanium silicon target TiSi
  • chromium silicon target CrSi zinc aluminum target ZnAl
  • titanium zinc target TiZn titanium aluminum target TiAl Titanium-zirconium target TiZr
  • titanium-silicon target TiSi Titanium nickel target TiNi, nickel chromium target NiCr, nickel aluminum target NiAl, nickel vanadium target NiV, or nickel iron target NiFe.
  • a vacuum ion sputtering target device comprising: a receiving space, a substrate disposed in the receiving space, a magnetron, a target, and a backing plate, The target is located above the backing plate, the magnetron is disposed under the backing plate, and the substrate is disposed above the target; wherein the shape of the target is according to a magnetic field intensity distribution set up;
  • the magnetron generates a magnetic field between the target and the substrate, and when a plasma is disposed in the receiving space, the plasma accelerates bombardment under the action of an electric field
  • the target sputters a large amount of the target atoms, and the target atoms are deposited on the substrate to form a thin film.
  • the target strength of the region corresponding to the magnetic field strength is large, and the magnetic field strength is small, and the thickness of the target corresponding to the region is small.
  • the lower surface of the target has a wave shape
  • the surface of the back plate has a wave shape
  • the peak top of the lower surface of the target and the surface of the back plate The peaks and valleys match the contacts so that the target and the backing plate are tightly bonded together.
  • the lower surface of the target has a wave-shaped structure having two peaks
  • the surface of the back plate has a wave-shaped structure having two peaks and valleys; the two peaks of the lower surface of the target are respectively Two peaks and valleys embedded in the surface of the backing plate to tightly bond the target and the backing plate together.
  • the upper surface of the target is a flat surface.
  • the wave shape of the lower surface of the target is symmetrically disposed.
  • the thickness and size of the target can be set according to actual consumption.
  • the target is a metal target, including: titanium target Ti, aluminum target Al, tin target Su, bismuth target Hf, lead target Pb, nickel target Ni, silver target Ag, selenium target Se, bismuth target Be, ⁇ target Te, carbon target C, vanadium target V, bismuth target Sb, indium target In, boron target B, tungsten target W, manganese target Mn, bismuth target Bi, copper target Cu, silicon target Si, bismuth target Ta, zinc target Zn, magnesium target Mg, zirconium target Zr, chromium target Cr, stainless steel target SS, ruthenium target Nb, molybdenum target Mo, cobalt target Co, iron target Fe, or ruthenium target Ge.
  • titanium target Ti aluminum target Al
  • tin target Su bismuth target Hf
  • lead target Pb nickel target Ni
  • silver target Ag selenium target Se
  • bismuth target Be ⁇ target Te
  • carbon target C vanadium target V
  • bismuth target Sb
  • the target is an alloy target, including: iron cobalt target FeCo, aluminum silicon target AlSi, titanium silicon target TiSi, chromium silicon target CrSi, zinc aluminum target ZnAl, titanium zinc target TiZn, titanium aluminum target TiAl, Titanium-zirconium target TiZr, titanium-silicon target TiSi, Titanium nickel target TiNi, nickel chromium target NiCr, nickel aluminum target NiAl, nickel vanadium target NiV, or nickel iron target NiFe.
  • iron cobalt target FeCo aluminum silicon target AlSi
  • titanium silicon target TiSi titanium silicon target TiSi
  • chromium silicon target CrSi zinc aluminum target ZnAl
  • titanium zinc target TiZn titanium aluminum target TiAl
  • Titanium-zirconium target TiZr titanium-silicon target TiSi
  • Titanium nickel target TiNi nickel chromium target NiCr
  • nickel aluminum target NiAl nickel vanadium target NiV
  • nickel iron target NiFe nickel iron target NiFe
  • the target is an integrally formed structure.
  • the shape of the target provided by the present invention is set according to the magnetic field intensity distribution, such as by setting the shape of the target to a wave shape, such as a W type, due to the ion during the vacuum sputtering operation.
  • the surface of the impacted target will form a wave shape, ie the consumable target will have a substantially wavy shape. Therefore, the shape of the target is set to a wave shape, the utilization rate of the target is relatively high, and substantially no remaining target exists, thereby saving cost.
  • the wave-shaped target provided by the embodiment of the invention effectively solves the problem that the utilization rate of the target is low due to the use of the rectangular target as the sputtering material existing in the prior art.
  • FIG. 1 is a schematic view showing the structure of a target after sputtering according to the prior art
  • FIG. 1A is a schematic structural view of a vacuum ion sputtering target device according to an embodiment of the present invention
  • FIG. 2 is a schematic structural view of a target according to Embodiment 1 of the present invention.
  • FIG. 3 is a schematic structural view of a target before sputtering of a target according to Embodiment 1 of the present invention
  • FIG. 4 is a schematic structural view showing a structure after sputtering of a target according to Embodiment 1 of the present invention.
  • FIG. 5 is a schematic structural view of a target according to Embodiment 2 of the present invention.
  • FIG. 6 is a schematic structural view of a target before sputtering according to a second embodiment of the present invention.
  • FIG. 7 is a schematic view showing the structure of a target after sputtering according to Embodiment 2 of the present invention.
  • the shape of the target provided by the present invention is set according to the magnetic field intensity distribution, such as by setting the shape of the target to a wave shape, such as a W type, due to the ion during the vacuum sputtering operation.
  • the surface of the impacted target will form a wave shape, ie the consumable target will have a substantially wavy shape. Therefore, the shape of the target is set to a wave shape, the utilization rate of the target is relatively high, and substantially no remaining target exists, thereby saving cost.
  • the wave-shaped target provided by the invention effectively solves the problem that the utilization of the target is low due to the use of the rectangular target as the sputtering material existing in the prior art.
  • FIG. 1A is a schematic structural view of a vacuum ion sputtering target device according to an embodiment of the present invention; for convenience of description, only parts related to the embodiment of the present invention are shown.
  • the present invention provides a vacuum ion sputtering target device, the vacuum ion sputtering target device comprising: a receiving space 300, a substrate 301 disposed in the receiving space 300, a magnetron 302, and a a target 303 is disposed above the backing plate 304, and a magnetron 302 is disposed under the backing plate 304.
  • the substrate 301 is disposed above the target 303.
  • the shape of the target 303 is set according to the magnetic field intensity distribution.
  • the magnetron 302 generates a magnetic field between the target 303 and the substrate 301, and when the plasma is disposed in the accommodating space 300, the plasma is in an electric field.
  • the target 303 is accelerated by bombardment, and a large amount of the target atoms are sputtered, and the target atoms are deposited on the substrate 301 to form a thin film.
  • the target strength of the region corresponding to the magnetic field strength is large, and the magnetic field strength is small, and the thickness of the target corresponding to the region is small.
  • FIG. 2 is a schematic structural view of a target according to Embodiment 1 of the present invention
  • FIG. 3 is a schematic structural view of a target before sputtering according to Embodiment 1 of the present invention
  • 4 is a schematic view showing the structure of a target after sputtering according to Embodiment 1 of the present invention. For the convenience of description, only parts related to the embodiment of the present invention are shown.
  • the vacuum ion sputtering target device includes: a target 100, and a backing plate 200; wherein the target 100 is located above the backing plate 200.
  • the target 100 is configured to deposit atoms on the surface of the target 100 that are struck by ions during the vacuum sputtering operation to deposit on the surface of the substrate to form a film; the back plate 200 is used for fixing the substrate
  • the target 100 is described.
  • the lower surface of the target 100 when the magnetic field intensity distribution is in a wave shape, the lower surface of the target 100 has a wave shape, and the peak top of the lower surface of the target 100 is in contact with the back plate 200;
  • the upper surface of the plate 200 is also in a wave shape, and the peak top of the lower surface of the target 100 is in mating contact with the peaks and valleys of the upper surface of the back plate 200 to tightly bond the target 100 and the back plate 200. together.
  • the surface of the target 100 struck by ions may form a wave shape during the vacuum sputtering operation, that is, the consumed target 100 has a substantially wave shape. Therefore, the shape of the target 100 is set to a wave shape, the utilization rate of the target 100 is relatively high, and the remaining target 100 is substantially absent, thereby saving cost.
  • the lower surface of the target 100 has a wave-shaped structure having two peaks
  • the upper surface of the back plate 200 has a wave-shaped structure having two peaks and valleys. Further, two peaks on the lower surface of the target 100 are respectively embedded in two peaks and valleys on the upper surface of the back plate 200, so that the target 100 and the back plate 200 are tightly coupled together. .
  • the upper surface of the target 100 is planar, and the design has the advantage that the film formed by the ion impact causes the material of the 100 target to fly out and deposit on the substrate to be relatively uniform.
  • the wave shape of the lower surface of the target 100 is symmetrically disposed.
  • the wave shape of the upper surface of the back plate 200 is also symmetrically disposed.
  • the thickness and size of the target 100 can be set according to actual consumption. In this way, the target 100 can be consumed in a vacuum sputtering operation without interrupting the vacuum sputtering operation due to the insufficient target 100, replacing a new target, and not replacing it.
  • the problem of waste is caused by the endless consumption of the target.
  • the embodiment of the present invention is set according to the amount required for a vacuum sputtering operation, thereby effectively improving the utilization rate of the target 100, thereby achieving substantially no waste, and saving cost.
  • the backboard 200 is made of a copper material.
  • other metallic materials may also be used. Any modifications, equivalent substitutions and improvements made within the spirit and scope of the invention are intended to be included within the scope of the invention.
  • the target 100 may be a metal target, such as a titanium target Ti, an aluminum target Al, a tin target Su, a target Hf, a lead target Pb, a nickel target Ni, a silver target Ag, a selenium target.
  • a metal target such as a titanium target Ti, an aluminum target Al, a tin target Su, a target Hf, a lead target Pb, a nickel target Ni, a silver target Ag, a selenium target.
  • the target 100 can also be an alloy target, such as: iron cobalt target FeCo, aluminum silicon target AlSi, titanium silicon target TiSi, chromium silicon target CrSi, zinc aluminum target ZnAl, titanium zinc target. TiZn, titanium aluminum target TiAl, titanium zirconium target TiZr, titanium silicon target TiSi, Titanium nickel target TiNi, nickel chromium target NiCr, nickel aluminum target NiAl, nickel vanadium target NiV, nickel iron target NiFe, and the like.
  • alloy target such as: iron cobalt target FeCo, aluminum silicon target AlSi, titanium silicon target TiSi, chromium silicon target CrSi, zinc aluminum target ZnAl, titanium zinc target.
  • the target 100 is an integrally formed structure
  • the back plate 200 may also be an integrally formed structure. This type of manufacturing is convenient for production and saves materials.
  • the ions bombard the cathode, knocking out the cathode atoms and secondary electrons, and the secondary electrons collide with the neutral atoms to generate more ions, which then bombard the cathode and generate secondary electrons, and so on.
  • the current density reaches the order of 0.01 A/cm2
  • the current will increase with the increase of the voltage, forming an abnormal glow discharge of the high-density plasma, and the high-energy ion bombardment cathode (ie, the target 100) generates a sputtering phenomenon.
  • the sputtered high-energy target particles are deposited on the anode glass (ie, the substrate) to achieve the purpose of coating.
  • the electrons make a helical motion during the movement toward the anode, and the electrons are bound by the orthogonal electromagnetic field to the vicinity of the target 100, ionizing more positively charged ions and electrons.
  • the magnetron generates a magnetic field, and since the magnetic field intensity distribution is different, the generated plasma density distribution is different, and the sputtering speed is different, and finally a undulating undulation is formed on the surface of the target 100, which is due to the target of the embodiment of the present invention.
  • the shape of the material is set to a wave shape, because during the vacuum sputtering operation, the surface of the target that is struck by ions may form a wave shape, that is, the consumed target has a substantially wave shape. Therefore, the shape of the target is set to a wave shape, the utilization rate of the target is relatively high, and substantially no remaining target exists, thereby saving cost.
  • the wave-shaped target provided by the embodiment of the invention effectively solves the problem that the utilization rate of the target is low due to the use of the rectangular target as the sputtering material existing in the prior art.
  • FIG. 5 is a schematic structural view of a target according to Embodiment 2 of the present invention
  • FIG. 6 is a schematic structural view of a target before sputtering according to Embodiment 2 of the present invention
  • FIG. 7 is a schematic view showing the structure of a target after sputtering according to Embodiment 2 of the present invention. For the convenience of description, only parts related to the embodiment of the present invention are shown.
  • the vacuum ion sputtering target device includes: a target 101, and a backing plate 201; wherein the target 101 is located above the backing plate 201.
  • the target 101 is configured to, during a vacuum sputtering operation, atoms of the surface of the target 101 that are struck by ions are ejected and deposited on the surface of the substrate to form a film; the back plate 201 is used for fixing the substrate The target 101 is described.
  • the lower surface of the target 101 has a W shape
  • the upper surface of the back plate 201 also has a W shape
  • the W-shaped target 101 is matched with the W-shaped back plate 201. So that the target 101 and the back sheet 201 are tightly bonded together.
  • the shape of the target 101 is set to a W shape, the utilization ratio of the target 101 is relatively high, and the remaining target 101 is substantially absent, thereby saving cost.
  • the W-shaped target 101 is embedded in the W-shaped back plate 201 such that the target 101 and the back plate 201 are tightly bonded together.
  • the target 101 since the substances on both sides are substantially consumed at the same time, the target 101 is not left on one side, thereby improving the utilization ratio of the target.
  • the upper surface of the target 101 is planar, and the design has the advantage that the film formed by the ion impact causes the 101 target material to fly out and deposit on the substrate to be relatively uniform.
  • the upper surface of the target 101 may also be non-planar, such as a rugged surface.
  • the thickness and size of the target 101 can be set according to actual consumption. In this way, the target 101 can be consumed in one vacuum sputtering operation, the vacuum sputtering operation is not interrupted due to the insufficient target 101, a new target is replaced, and the replacement is not performed.
  • the problem of waste is caused by the endless consumption of the target.
  • the embodiment of the present invention is set according to the amount required for one vacuum sputtering operation, thereby effectively improving the utilization rate of the target 101, thereby achieving substantially no waste, and saving cost.
  • the back plate 201 is made of a copper material.
  • other metallic materials may also be used. Any modifications, equivalent substitutions and improvements made within the spirit and scope of the invention are intended to be included within the scope of the invention.
  • the target 101 may be a metal target, for example, a titanium target Ti, an aluminum target Al, a tin target Su, a target Hf, a lead target Pb, a nickel target Ni, a silver target Ag, a selenium target.
  • a metal target for example, a titanium target Ti, an aluminum target Al, a tin target Su, a target Hf, a lead target Pb, a nickel target Ni, a silver target Ag, a selenium target.
  • the target 101 can also be an alloy target, such as: iron cobalt target FeCo, aluminum silicon target AlSi, titanium silicon target TiSi, chromium silicon target CrSi, zinc aluminum target ZnAl, titanium zinc target. TiZn, titanium aluminum target TiAl, titanium zirconium target TiZr, titanium silicon target TiSi, Titanium nickel target TiNi, nickel chromium target NiCr, nickel aluminum target NiAl, nickel vanadium target NiV, nickel iron target NiFe, and the like.
  • alloy target such as: iron cobalt target FeCo, aluminum silicon target AlSi, titanium silicon target TiSi, chromium silicon target CrSi, zinc aluminum target ZnAl, titanium zinc target.
  • the target 101 is an integrally formed structure
  • the back plate 201 may also be an integrally formed structure. This type of manufacturing is convenient for production and saves materials.
  • the ions bombard the cathode, knocking out the cathode atoms and secondary electrons, and the secondary electrons collide with the neutral atoms to generate more ions, which then bombard the cathode and generate secondary electrons, and so on.
  • the current density reaches the order of 0.01 A/cm2
  • the current will increase with the increase of the voltage, forming an abnormal glow discharge of the high-density plasma, and the high-energy ion bombardment cathode (ie, the target 101) generates a sputtering phenomenon.
  • the sputtered high-energy target particles are deposited on the anode glass (ie, the substrate) to achieve the purpose of coating.
  • the electrons make a spiral motion during the movement to the anode, and the electrons are bound by the orthogonal electromagnetic field to the vicinity of the target 101 to ionize more positively charged ions and electrons.
  • the magnetron generates a magnetic field. Since the magnetic field intensity distribution is different, the generated plasma density distribution is different, and the sputtering speed is different, and finally a wavy undulating topography is formed on the surface of the target 101, which is due to the target of the embodiment of the present invention.
  • the shape of the material is set to the W shape, because during the vacuum sputtering operation, the surface of the target that is hit by the ions forms a wave shape, that is, the consumed target is substantially W-shaped. Therefore, the shape of the target is set to a W shape, the utilization ratio of the target is relatively high, and substantially no remaining target exists, thereby saving cost.
  • the W-shaped target provided by the embodiment of the invention effectively solves the problem that the utilization of the target is low due to the use of the rectangular target as the sputtering material in the prior art.
  • the vacuum ion sputtering target device provided by the embodiment of the present invention has the shape of the target set according to the magnetic field intensity distribution, such as by setting the shape of the target to a wave shape, such as a W type. Since the surface of the target that is struck by ions forms a wave shape during the vacuum sputtering operation, the consumed target is substantially wavy. Therefore, the shape of the target is set to a wave shape, the utilization rate of the target is relatively high, and substantially no remaining target exists, thereby saving cost.
  • the wave-shaped target provided by the embodiment of the invention effectively solves the problem that the utilization rate of the target is low due to the use of the rectangular target as the sputtering material existing in the prior art.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

一种真空离子溅镀靶材装置包括：一容纳空间(300)、设置于容纳空间(300)内的一基板(301)、一磁控管(302)、一靶材(303)、以及一背板(304)，靶材(303)位于背板(304)上方，磁控管(302)设置于背板(304)下方，基板(301)设置于靶材(303)上方；靶材(303)的形状是根据磁场强度分布而进行设定；其中磁场强度大对应区域的靶材(303)厚度大，磁场强度小对应区域的靶材(303)厚度小；靶材(303)为一体成型的结构。

Description

一种真空离子溅镀靶材装置 技术领域
本发明涉及真空离子溅镀领域，特别涉及一种真空离子溅镀靶材装置。
 背景技术
在现有技术中，利用真空溅镀的工作原理如下：主要是利用辉光放电（glow discharge）将氩气（Ar）离子撞击靶材（target）表面，靶材的原子被弹出而堆积在基板表面形成薄膜。溅镀薄膜的性质、均匀度都比蒸镀薄膜来的好，但是，镀膜速度却比蒸镀慢很多。一般金属镀膜大都采用直流溅镀，而不导电的陶磁材料则使用RF交流溅镀，基本的原理是在真空中利用辉光放电（glow discharge）将氩气（Ar）离子撞击靶材（target）表面，电浆中的阳离子会加速冲向作为被溅镀材的负电极表面，这个冲击将使靶材的物质飞出而沉积在基板上形成薄膜。
目前，真空溅镀的靶材形状通常呈矩形，而新型的溅镀设备几乎都使用强力磁铁将电子成螺旋状运动以加速靶材周围的氩气离子化，造成靶材与氩气离子间的撞击机率增加，提高溅镀速率，因此，被离子撞击的靶材表面会形成波浪形状，导致靶材的利用率相当低，一般只有15%左右，从而造成非常大的浪费。
如图1所示，真空溅镀的靶材形状呈矩形，被离子撞击的靶材表面会形成波浪形状，即图1中的阴影部分为靶材消耗的部分10，这样靶材的剩余部分则留下很多，即图1中的空白部分为靶材的剩余部分20，由图可看出，该矩形的靶材会造成非常大的浪费，导致靶材的利用率相当低。又如，当靶材剩余的某一部分接近铜背板时，即黑色部分为铜背板30，而靶材别的区域的剩余部分则留下很多，但还是需要报废该靶材，需要更换一个新的矩形靶材继续进行真空溅镀操作，从而造成非常大的浪费，导致靶材的利用率相当低。
故，有必要提出一种新的技术方案，以解决上述技术问题。
 技术问题
本发明的目的在于提供一种真空离子溅镀靶材装置，其能解决现有技术中存在的由于采用矩形靶材作为溅镀材料，会造成靶材的利用率低的问题。
 技术解决方案
一种真空离子溅镀靶材装置，其中所述真空离子溅镀靶材装置包括：一容纳空间、设置于所述容纳空间内的一基板、一磁控管、一靶材、以及一背板，所述靶材位于所述背板上方，所述磁控管设置于所述背板下方，所述基板设置于所述靶材上方；其中，所述靶材的形状是根据磁场强度分布而进行设定；其中所述磁场强度大对应区域的所述靶材厚度大，所述磁场强度小对应区域的所述靶材厚度小；所述靶材为一体成型的结构；
其中，在真空溅镀操作过程中，所述磁控管在所述靶材和所述基板之间产生磁场，在所述容纳空间内设置有等离子时，所述等离子在电场的作用下加速轰击所述靶材，溅射出大量的所述靶材原子，所述靶材原子在所述基板上沉积形成薄膜。
优选的，其中当所述磁场强度分布呈波浪形状时，所述靶材下表面呈波浪形状，所述背板上表面呈波浪形状，所述靶材下表面的峰顶与所述背板上表面的峰谷匹配接触，以使所述靶材和所述背板紧密结合在一起。
优选的，其中所述靶材下表面呈具有二个峰顶的波浪形状结构，所述背板上表面呈具有二个峰谷的波浪形状结构；所述靶材下表面的二个峰顶分别内嵌于所述背板上表面的二个峰谷处，以使所述靶材和所述背板紧密结合在一起。
优选的，其中所述靶材上表面为平面。
优选的，其中所述靶材下表面的波浪形状呈对称设置。
优选的，其中所述靶材的厚度以及大小均可根据实际消耗情况来自行设定。
优选的，其中所述靶材为金属靶材，包括：钛靶Ti、铝靶Al、锡靶Su、铪靶Hf、铅靶Pb、镍靶Ni、银靶Ag、硒靶Se、铍靶Be、碲靶Te、碳靶C、钒靶V、锑靶Sb、铟靶In、硼靶B、钨靶W、锰靶Mn、铋靶Bi、铜靶Cu、硅靶Si、钽靶Ta、锌靶Zn、镁靶Mg、锆靶Zr、铬靶Cr、不锈钢靶材S-S、铌靶Nb、钼靶Mo、钴靶Co、铁靶Fe、或锗靶Ge。
优选的，其中所述靶材为合金靶材，包括：铁钴靶FeCo、铝硅靶AlSi、钛硅靶TiSi、铬硅靶CrSi、锌铝靶ZnAl、钛锌靶材TiZn、钛铝靶TiAl、钛锆靶TiZr、钛硅靶TiSi、 钛镍靶TiNi、镍铬靶NiCr、镍铝靶NiAl、镍钒靶NiV、或镍铁靶NiFe。
一种真空离子溅镀靶材装置，所述真空离子溅镀靶材装置包括：一容纳空间、设置于所述容纳空间内的一基板、一磁控管、一靶材、以及一背板，所述靶材位于所述背板上方，所述磁控管设置于所述背板下方，所述基板设置于所述靶材上方；其中，所述靶材的形状是根据磁场强度分布而进行设定；
其中，在真空溅镀操作过程中，所述磁控管在所述靶材和所述基板之间产生磁场，在所述容纳空间内设置有等离子时，所述等离子在电场的作用下加速轰击所述靶材，溅射出大量的所述靶材原子，所述靶材原子在所述基板上沉积形成薄膜。
优选的，所述磁场强度大对应区域的所述靶材厚度大，所述磁场强度小对应区域的所述靶材厚度小。
优选的，当所述磁场强度分布呈波浪形状时，所述靶材下表面呈波浪形状，所述背板上表面呈波浪形状，所述靶材下表面的峰顶与所述背板上表面的峰谷匹配接触，以使所述靶材和所述背板紧密结合在一起。
优选的，所述靶材下表面呈具有二个峰顶的波浪形状结构，所述背板上表面呈具有二个峰谷的波浪形状结构；所述靶材下表面的二个峰顶分别内嵌于所述背板上表面的二个峰谷处，以使所述靶材和所述背板紧密结合在一起。
优选的，所述靶材上表面为平面。
优选的，所述靶材下表面的波浪形状呈对称设置。
优选的，所述靶材的厚度以及大小均可根据实际消耗情况来自行设定。
优选的，所述靶材为金属靶材，包括：钛靶Ti、铝靶Al、锡靶Su、铪靶Hf、铅靶Pb、镍靶Ni、银靶Ag、硒靶Se、铍靶Be、碲靶Te、碳靶C、钒靶V、锑靶Sb、铟靶In、硼靶B、钨靶W、锰靶Mn、铋靶Bi、铜靶Cu、硅靶Si、钽靶Ta、锌靶Zn、镁靶Mg、锆靶Zr、铬靶Cr、不锈钢靶材S-S、铌靶Nb、钼靶Mo、钴靶Co、铁靶Fe、或锗靶Ge。
优选的，所述靶材为合金靶材，包括：铁钴靶FeCo、铝硅靶AlSi、钛硅靶TiSi、铬硅靶CrSi、锌铝靶ZnAl、钛锌靶材TiZn、钛铝靶TiAl、钛锆靶TiZr、钛硅靶TiSi、 钛镍靶TiNi、镍铬靶NiCr、镍铝靶NiAl、镍钒靶NiV、或镍铁靶NiFe。
优选的，所述靶材为一体成型的结构。
 有益效果
相对现有技术，本发明提供的靶材的形状是根据磁场强度分布而进行设定，如通过将靶材的形状设置为波浪形状，如W型，由于在真空溅镀操作过程中，被离子撞击的靶材表面会形成波浪形状，即消耗的靶材大致呈波浪形状。因此，将所述靶材的形状设置为波浪形状，所述靶材的利用率相当高，基本不会存在剩余的靶材，从而节省了成本。本发明实施例提供的波浪形状的靶材，有效解决了现有技术中存在的由于采用矩形靶材作为溅镀材料，会造成靶材的利用率低的问题。
 附图说明
图1为现有技术提供的靶材溅镀后的形貌结构示意图；
图1A为本发明实施例提供的真空离子溅镀靶材装置的结构示意图；
图2为本发明实施例一提供的靶材的结构示意图；
图3为本发明实施例一提供的靶材溅镀前的形貌结构示意图；
图4为本发明实施例一提供的靶材溅镀后的形貌结构示意图；
图5为本发明实施例二提供的靶材的结构示意图；
图6为本发明实施例二提供的靶材溅镀前的形貌结构示意图；
图7为本发明实施例二提供的靶材溅镀后的形貌结构示意图。
 本发明的最佳实施方式
本说明书所使用的词语“实施例”意指用作实例、示例或例证。此外，本说明书和所附权利要求中所使用的冠词“一”一般地可以被解释为意指“一个或多个”，除非另外指定或从上下文清楚导向单数形式。
在本发明中，本发明提供的靶材的形状是根据磁场强度分布而进行设定，如通过将靶材的形状设置为波浪形状，如W型，由于在真空溅镀操作过程中，被离子撞击的靶材表面会形成波浪形状，即消耗的靶材大致呈波浪形状。因此，将所述靶材的形状设置为波浪形状，所述靶材的利用率相当高，基本不会存在剩余的靶材，从而节省了成本。本发明提供的波浪形状的靶材，有效解决了现有技术中存在的由于采用矩形靶材作为溅镀材料，会造成靶材的利用率低的问题。
请参阅图1A，为本发明实施例提供的真空离子溅镀靶材装置的结构示意图；为了便于说明，仅示出了与本发明实施例相关的部分。本发明提供的一种真空离子溅镀靶材装置，所述真空离子溅镀靶材装置包括：一容纳空间300、设置于所述容纳空间300内的一基板301、一磁控管302、一靶材303、以及一背板304，所述靶材303位于所述背板304上方，所述磁控管302设置于所述背板304下方，所述基板301设置于所述靶材303上方；其中，所述靶材303的形状是根据磁场强度分布而进行设定。
其中，在真空溅镀操作过程中，所述磁控管302在所述靶材303和所述基板301之间产生磁场，在所述容纳空间300内设置有等离子时，所述等离子在电场的作用下加速轰击所述靶材303，溅射出大量的所述靶材原子，所述靶材原子在所述基板301上沉积形成薄膜。
优选的，所述磁场强度大对应区域的所述靶材厚度大，所述磁场强度小对应区域的所述靶材厚度小。
为了说明本发明所述的技术方案，下面通过具体实施例来进行说明。
请一并参阅图2、图3及图4，图2为本发明实施例一提供的靶材的结构示意图；图3为本发明实施例一提供的靶材溅镀前的形貌结构示意图；图4为本发明实施例一提供的靶材溅镀后的形貌结构示意图。为了便于说明，仅示出了与本发明实施例相关的部分。
所述真空离子溅镀靶材装置包括：一靶材100、以及一背板200；其中，所述靶材100位于所述背板200上方。所述靶材100，用于在真空溅镀操作过程中，被离子撞击的所述靶材100表面的原子会被弹出而堆积在基板表面以形成薄膜；所述背板200，用于固定所述靶材100。
在本发明实施例中，当所述磁场强度分布呈波浪形状时，所述靶材100下表面呈波浪形状，所述靶材100下表面的峰顶与所述背板200接触；所述背板200的上表面也呈波浪形状，所述靶材100下表面的峰顶与所述背板200上表面的峰谷匹配接触，以使所述靶材100和所述背板200紧密结合在一起。本实施例中，由于在真空溅镀操作过程中，被离子撞击的靶材100表面会形成波浪形状，即消耗的靶材100大致呈波浪形状。因此，将所述靶材100的形状设置为波浪形状，所述靶材100的利用率相当高，基本不会存在剩余的靶材100，从而节省了成本。
作为本发明一优选实施例，所述靶材100下表面呈具有二个峰顶的波浪形状结构，所述背板200上表面呈具有二个峰谷的波浪形状结构。进一步的，所述靶材100下表面的二个峰顶分别内嵌于所述背板200上表面的二个峰谷处，以使所述靶材100和所述背板200紧密结合在一起。
作为本发明一优选实施例，所述靶材100上表面为平面，这样设计的好处是，被离子冲击使所述100靶材的物质飞出而沉积在基板上形成的薄膜会较均匀。
作为本发明一优选实施例，所述靶材100下表面的波浪形状呈对称设置，相对应的，所述背板200上表面的波浪形状也呈对称设置，这样设计的好处是，所述靶材100两边的物质基本会同时消耗掉，而不会导致一边还余留有所述靶材100，从而提高了所述靶材的利用率。
在本发明实施例中，所述靶材100的厚度以及大小均可根据实际消耗情况来自行设定。这样便可在一次的真空溅镀操作过程消耗掉所述靶材100，不会因为所述靶材100不够而中断真空溅镀操作，重新更换一个新的靶材，也不会因为重新更换的靶材消耗不完而导致浪费的问题。本发明实施例是根据一次真空溅镀操作所需的量来进行设置的，因此有效提高所述靶材100的利用率，从而达到基本无浪费的情况，节省了成本。
在本发明实施例中，所述背板200采用铜材料制成。然而，可以理解的是，也可以采用其他金属材料制成。凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。
在本发明实施例中，所述靶材100可以为金属靶材，例如：钛靶Ti、铝靶Al、锡靶Su、铪靶Hf、铅靶Pb、镍靶Ni、银靶Ag、硒靶Se、铍靶Be、碲靶Te、碳靶C、钒靶V、锑靶Sb、铟靶In、硼靶B、钨靶W、锰靶Mn、铋靶Bi、铜靶Cu、硅靶Si、钽靶Ta、锌靶Zn、镁靶Mg、锆靶Zr、铬靶Cr、不锈钢靶材S-S、铌靶Nb、钼靶Mo、钴靶Co、铁靶Fe、锗靶Ge等。
然而，可以理解的是，所述靶材100也可以为合金靶材，例如：铁钴靶FeCo、铝硅靶AlSi、钛硅靶TiSi、铬硅靶CrSi、锌铝靶ZnAl、钛锌靶材TiZn、钛铝靶TiAl、钛锆靶TiZr、钛硅靶TiSi、 钛镍靶TiNi、镍铬靶NiCr、镍铝靶NiAl、镍钒靶NiV、镍铁靶NiFe等。
在本发明实施例中，所述靶材100为一体成型的结构，所述背板200也可以是一体成型的结构。这样的制造方式，既方便生产，同时也能够节省材料。
下面详细描述真空溅镀的工作原理。
在充入少量工艺气体的容纳空间内，当极间电压很小时，只有少量离子和电子存在，电流密度在10-15A/cm2数量极，当阴极（即靶材100）和阳极间电压增加时，带电粒子在电场的作用下加速运动，能量增加，与电极或中性气体原子相碰撞，产生更多的带电粒子，直至电流达到10-6A/cm2数量极，当电压再增加时，则会产生负阻效应，即“雪崩”现象。此时离子轰击阴极，击出阴极原子和二次电子，二次电子与中性原子碰撞，产生更多离子，此离子再轰击阴极，又产生二次电子，如此反复。当电流密度达到0.01A/cm2数量级左右时，电流将随电压的增加而增加，形成高密度等离子体的异常辉光放电，高能量的离子轰击阴极（即靶材100）产生溅射现象。溅射出来的高能量靶材粒子沉积到阳极玻璃（即基板）上，从而达到镀膜的目的。
在正交电磁场的束缚下，电子在向阳极运动的过程中做螺旋状运动，电子被正交电磁场束缚在靶材100附近，电离出更多的带正电的离子和电子。
磁控管产生磁场，由于磁场强度分布不同，所以产生的等离子体密度分布不同，进而溅射速度不同，最终在靶材100表面形成了波浪状起伏的形貌，正由于本发明实施例的靶材的形状设置为波浪形状，由于在真空溅镀操作过程中，被离子撞击的靶材表面会形成波浪形状，即消耗的靶材大致呈波浪形状。因此，将所述靶材的形状设置为波浪形状，所述靶材的利用率相当高，基本不会存在剩余的靶材，从而节省了成本。本发明实施例提供的波浪形状的靶材，有效解决了现有技术中存在的由于采用矩形靶材作为溅镀材料，会造成靶材的利用率低的问题。
请一并参阅图5、图6及图7，图5为本发明实施例二提供的靶材的结构示意图；图6为本发明实施例二提供的靶材溅镀前的形貌结构示意图；图7为本发明实施例二提供的靶材溅镀后的形貌结构示意图。为了便于说明，仅示出了与本发明实施例相关的部分。
所述真空离子溅镀靶材装置包括：一靶材101、以及一背板201；其中，所述靶材101位于所述背板201上方。所述靶材101，用于在真空溅镀操作过程中，被离子撞击的所述靶材101表面的原子会被弹出而堆积在基板表面以形成薄膜；所述背板201，用于固定所述靶材101。
在本发明实施例中，所述靶材101下表面呈W形状，所述背板201的上表面也呈W形状，W形状的所述靶材101与W形状的所述背板201匹配接触，以使所述靶材101和所述背板201紧密结合在一起。本实施例中，由于在真空溅镀操作过程中，被离子撞击的靶材101表面会形成波浪形状，即消耗的靶材101大致呈W形状。因此，将所述靶材101的形状设置为W形状，所述靶材101的利用率相当高，基本不会存在剩余的靶材101，从而节省了成本。
进一步的，W形状的所述靶材101内嵌于W形状的所述背板201处，以使所述靶材101和所述背板201紧密结合在一起。W形状的所述靶材101，由于两边的物质基本会同时消耗掉，而不会导致一边还余留有所述靶材101，从而提高了所述靶材的利用率。
作为本发明一优选实施例，所述靶材101上表面为平面，这样设计的好处是，被离子冲击使所述101靶材的物质飞出而沉积在基板上形成的薄膜会较均匀。
然而，可以理解的是，所述靶材101上表面也可以为非平面，例如凹凸不平的表面。
在本发明实施例中，所述靶材101的厚度以及大小均可根据实际消耗情况来自行设定。这样便可在一次的真空溅镀操作过程消耗掉所述靶材101，不会因为所述靶材101不够而中断真空溅镀操作，重新更换一个新的靶材，也不会因为重新更换的靶材消耗不完而导致浪费的问题。本发明实施例是根据一次真空溅镀操作所需的量来进行设置的，因此有效提高所述靶材101的利用率，从而达到基本无浪费的情况，节省了成本。
在本发明实施例中，所述背板201采用铜材料制成。然而，可以理解的是，也可以采用其他金属材料制成。凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。
在本发明实施例中，所述靶材101可以为金属靶材，例如：钛靶Ti、铝靶Al、锡靶Su、铪靶Hf、铅靶Pb、镍靶Ni、银靶Ag、硒靶Se、铍靶Be、碲靶Te、碳靶C、钒靶V、锑靶Sb、铟靶In、硼靶B、钨靶W、锰靶Mn、铋靶Bi、铜靶Cu、硅靶Si、钽靶Ta、锌靶Zn、镁靶Mg、锆靶Zr、铬靶Cr、不锈钢靶材S-S、铌靶Nb、钼靶Mo、钴靶Co、铁靶Fe、锗靶Ge等。
然而，可以理解的是，所述靶材101也可以为合金靶材，例如：铁钴靶FeCo、铝硅靶AlSi、钛硅靶TiSi、铬硅靶CrSi、锌铝靶ZnAl、钛锌靶材TiZn、钛铝靶TiAl、钛锆靶TiZr、钛硅靶TiSi、 钛镍靶TiNi、镍铬靶NiCr、镍铝靶NiAl、镍钒靶NiV、镍铁靶NiFe等。
在本发明实施例中，所述靶材101为一体成型的结构，所述背板201也可以是一体成型的结构。这样的制造方式，既方便生产，同时也能够节省材料。
下面详细描述真空溅镀的工作原理。
在充入少量工艺气体的容纳空间内，当极间电压很小时，只有少量离子和电子存在，电流密度在10-15A/cm2数量极，当阴极（即靶材101）和阳极间电压增加时，带电粒子在电场的作用下加速运动，能量增加，与电极或中性气体原子相碰撞，产生更多的带电粒子，直至电流达到10-6A/cm2数量极，当电压再增加时，则会产生负阻效应，即“雪崩”现象。此时离子轰击阴极，击出阴极原子和二次电子，二次电子与中性原子碰撞，产生更多离子，此离子再轰击阴极，又产生二次电子，如此反复。当电流密度达到0.01A/cm2数量级左右时，电流将随电压的增加而增加，形成高密度等离子体的异常辉光放电，高能量的离子轰击阴极（即靶材101）产生溅射现象。溅射出来的高能量靶材粒子沉积到阳极玻璃（即基板）上，从而达到镀膜的目的。
在正交电磁场的束缚下，电子在向阳极运动的过程中做螺旋状运动，电子被正交电磁场束缚在靶材101附近，电离出更多的带正电的离子和电子。
磁控管产生磁场，由于磁场强度分布不同，所以产生的等离子体密度分布不同，进而溅射速度不同，最终在靶材101表面形成了波浪状起伏的形貌，正由于本发明实施例的靶材的形状设置为W形状，由于在真空溅镀操作过程中，被离子撞击的靶材表面会形成波浪形状，即消耗的靶材大致呈W形状。因此，将所述靶材的形状设置为W形状，所述靶材的利用率相当高，基本不会存在剩余的靶材，从而节省了成本。本发明实施例提供的W形状的靶材，有效解决了现有技术中存在的由于采用矩形靶材作为溅镀材料，会造成靶材的利用率低的问题。
综上所述，本发明实施例提供的真空离子溅镀靶材装置，其靶材的形状是根据磁场强度分布而进行设定，如通过将靶材的形状设置为波浪形状，如W型，由于在真空溅镀操作过程中，被离子撞击的靶材表面会形成波浪形状，即消耗的靶材大致呈波浪形状。因此，将所述靶材的形状设置为波浪形状，所述靶材的利用率相当高，基本不会存在剩余的靶材，从而节省了成本。本发明实施例提供的波浪形状的靶材，有效解决了现有技术中存在的由于采用矩形靶材作为溅镀材料，会造成靶材的利用率低的问题。
尽管已经相对于一个或多个实现方式示出并描述了本发明，但是本领域技术人员基于对本说明书和附图的阅读和理解将会想到等价变型和修改。本发明包括所有这样的修改和变型，并且仅由所附权利要求的范围限制。特别地关于由上述组件执行的各种功能，用于描述这样的组件的术语旨在对应于执行所述组件的指定功能（例如其在功能上是等价的）的任意组件（除非另外指示），即使在结构上与执行本文所示的本说明书的示范性实现方式中的功能的公开结构不等同。此外，尽管本说明书的特定特征已经相对于若干实现方式中的仅一个被公开，但是这种特征可以与如可以对给定或特定应用而言是期望和有利的其他实现方式的一个或多个其他特征组合。而且，就术语“包括”、“具有”、“含有”或其变形被用在具体实施方式或权利要求中而言，这样的术语旨在以与术语“包含”相似的方式包括。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (18)

  1. 一种真空离子溅镀靶材装置，其中所述真空离子溅镀靶材装置包括：一容纳空间、设置于所述容纳空间内的一基板、一磁控管、一靶材、以及一背板，所述靶材位于所述背板上方，所述磁控管设置于所述背板下方，所述基板设置于所述靶材上方；其中，所述靶材的形状是根据磁场强度分布而进行设定；其中所述磁场强度大对应区域的所述靶材厚度大，所述磁场强度小对应区域的所述靶材厚度小；所述靶材为一体成型的结构；
    其中，在真空溅镀操作过程中，所述磁控管在所述靶材和所述基板之间产生磁场，在所述容纳空间内设置有等离子时，所述等离子在电场的作用下加速轰击所述靶材，溅射出大量的所述靶材原子，所述靶材原子在所述基板上沉积形成薄膜。
  2. 根据权利要求1所述的真空离子溅镀靶材装置，其中当所述磁场强度分布呈波浪形状时，所述靶材下表面呈波浪形状，所述背板上表面呈波浪形状，所述靶材下表面的峰顶与所述背板上表面的峰谷匹配接触，以使所述靶材和所述背板紧密结合在一起。
  3. 根据权利要求2所述的真空离子溅镀靶材装置，其中所述靶材下表面呈具有二个峰顶的波浪形状结构，所述背板上表面呈具有二个峰谷的波浪形状结构；所述靶材下表面的二个峰顶分别内嵌于所述背板上表面的二个峰谷处，以使所述靶材和所述背板紧密结合在一起。
  4. 根据权利要求2所述的真空离子溅镀靶材装置，其中所述靶材上表面为平面。
  5. 根据权利要求2所述的真空离子溅镀靶材装置，其中所述靶材下表面的波浪形状呈对称设置。
  6. 根据权利要求1所述的真空离子溅镀靶材装置，其中所述靶材的厚度以及大小均可根据实际消耗情况来自行设定。
  7. 根据权利要求1所述的真空离子溅镀靶材装置，其中所述靶材为金属靶材，包括：钛靶Ti、铝靶Al、锡靶Su、铪靶Hf、铅靶Pb、镍靶Ni、银靶Ag、硒靶Se、铍靶Be、碲靶Te、碳靶C、钒靶V、锑靶Sb、铟靶In、硼靶B、钨靶W、锰靶Mn、铋靶Bi、铜靶Cu、硅靶Si、钽靶Ta、锌靶Zn、镁靶Mg、锆靶Zr、铬靶Cr、不锈钢靶材S-S、铌靶Nb、钼靶Mo、钴靶Co、铁靶Fe、或锗靶Ge。
  8. 根据权利要求1所述的真空离子溅镀靶材装置，其中所述靶材为合金靶材，包括：铁钴靶FeCo、铝硅靶AlSi、钛硅靶TiSi、铬硅靶CrSi、锌铝靶ZnAl、钛锌靶材TiZn、钛铝靶TiAl、钛锆靶TiZr、钛硅靶TiSi、 钛镍靶TiNi、镍铬靶NiCr、镍铝靶NiAl、镍钒靶NiV、或镍铁靶NiFe。
  9. 一种真空离子溅镀靶材装置，其中所述真空离子溅镀靶材装置包括：一容纳空间、设置于所述容纳空间内的一基板、一磁控管、一靶材、以及一背板，所述靶材位于所述背板上方，所述磁控管设置于所述背板下方，所述基板设置于所述靶材上方；其中，所述靶材的形状是根据磁场强度分布而进行设定；
    其中，在真空溅镀操作过程中，所述磁控管在所述靶材和所述基板之间产生磁场，在所述容纳空间内设置有等离子时，所述等离子在电场的作用下加速轰击所述靶材，溅射出大量的所述靶材原子，所述靶材原子在所述基板上沉积形成薄膜。
  10. 根据权利要求9所述的真空离子溅镀靶材装置，其中所述磁场强度大对应区域的所述靶材厚度大，所述磁场强度小对应区域的所述靶材厚度小。
  11. 根据权利要求9所述的真空离子溅镀靶材装置，其中当所述磁场强度分布呈波浪形状时，所述靶材下表面呈波浪形状，所述背板上表面呈波浪形状，所述靶材下表面的峰顶与所述背板上表面的峰谷匹配接触，以使所述靶材和所述背板紧密结合在一起。
  12. 根据权利要求11所述的真空离子溅镀靶材装置，其中所述靶材下表面呈具有二个峰顶的波浪形状结构，所述背板上表面呈具有二个峰谷的波浪形状结构；所述靶材下表面的二个峰顶分别内嵌于所述背板上表面的二个峰谷处，以使所述靶材和所述背板紧密结合在一起。
  13. 根据权利要求11所述的真空离子溅镀靶材装置，其中所述靶材上表面为平面。
  14. 根据权利要求11所述的真空离子溅镀靶材装置，其中所述靶材下表面的波浪形状呈对称设置。
  15. 根据权利要求9所述的真空离子溅镀靶材装置，其中所述靶材的厚度以及大小均可根据实际消耗情况来自行设定。
  16. 根据权利要求9所述的真空离子溅镀靶材装置，其中所述靶材为金属靶材，包括：钛靶Ti、铝靶Al、锡靶Su、铪靶Hf、铅靶Pb、镍靶Ni、银靶Ag、硒靶Se、铍靶Be、碲靶Te、碳靶C、钒靶V、锑靶Sb、铟靶In、硼靶B、钨靶W、锰靶Mn、铋靶Bi、铜靶Cu、硅靶Si、钽靶Ta、锌靶Zn、镁靶Mg、锆靶Zr、铬靶Cr、不锈钢靶材S-S、铌靶Nb、钼靶Mo、钴靶Co、铁靶Fe、或锗靶Ge。
  17. 根据权利要求9所述的真空离子溅镀靶材装置，其中所述靶材为合金靶材，包括：铁钴靶FeCo、铝硅靶AlSi、钛硅靶TiSi、铬硅靶CrSi、锌铝靶ZnAl、钛锌靶材TiZn、钛铝靶TiAl、钛锆靶TiZr、钛硅靶TiSi、 钛镍靶TiNi、镍铬靶NiCr、镍铝靶NiAl、镍钒靶NiV、或镍铁靶NiFe。
  18. 1根据权利要求9所述的真空离子溅镀靶材装置，其中所述靶材为一体成型的结构。
PCT/CN2014/093214 2014-12-02 2014-12-08 一种真空离子溅镀靶材装置 Ceased WO2016086428A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US14/416,150 US20160155618A1 (en) 2014-12-02 2014-12-08 Vacuum ion sputtering target device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201410720262.5A CN104561917A (zh) 2014-12-02 2014-12-02 一种真空离子溅镀靶材装置
CN201410720262.5 2014-12-02

Publications (1)

Publication Number Publication Date
WO2016086428A1 true WO2016086428A1 (zh) 2016-06-09

Family

ID=53078976

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2014/093214 Ceased WO2016086428A1 (zh) 2014-12-02 2014-12-08 一种真空离子溅镀靶材装置

Country Status (2)

Country Link
CN (1) CN104561917A (zh)
WO (1) WO2016086428A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN120210597A (zh) * 2025-05-27 2025-06-27 深圳市黄金屋真空科技有限公司 一种离子镀靶材原料及其制备方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107794501A (zh) * 2016-08-31 2018-03-13 宁波江丰电子材料股份有限公司 长寿命的靶材组件
CN108239761B (zh) * 2016-12-26 2020-07-17 北京北方华创微电子装备有限公司 磁性靶材组件及其制备方法、溅射腔室
CN108239756A (zh) * 2016-12-26 2018-07-03 北京北方华创微电子装备有限公司 磁性靶材组件及其制备方法、溅射腔室
CN108690961A (zh) * 2017-04-06 2018-10-23 北京北方华创微电子装备有限公司 磁控溅射组件、磁控溅射腔室及磁控溅射设备
CN107881474A (zh) * 2017-11-23 2018-04-06 宁波江丰电子材料股份有限公司 靶材及其处理方法
CN111116050A (zh) * 2020-01-08 2020-05-08 武汉理工大学 一种钨掺杂二氧化钒薄膜及其制备方法和应用
CN115466929B (zh) * 2022-09-19 2024-03-01 中核四0四有限公司 一种放射性金属靶材及其制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2384950Y (zh) * 1999-09-01 2000-06-28 冶金工业部钢铁研究总院 溅射靶
US20040009087A1 (en) * 2002-07-10 2004-01-15 Wuwen Yi Physical vapor deposition targets, and methods of forming physical vapor deposition targets
CN1527887A (zh) * 2001-05-30 2004-09-08 S.T. 带凹槽的溅射靶
US20050115045A1 (en) * 2003-12-01 2005-06-02 Koenigsmann Holger J. High purity ferromagnetic sputter target, assembly and method of manufacturing same
CN103290377A (zh) * 2012-06-13 2013-09-11 成都天马微电子有限公司 磁控管溅射方法、磁控溅射电极及其装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2384950Y (zh) * 1999-09-01 2000-06-28 冶金工业部钢铁研究总院 溅射靶
CN1527887A (zh) * 2001-05-30 2004-09-08 S.T. 带凹槽的溅射靶
US20040009087A1 (en) * 2002-07-10 2004-01-15 Wuwen Yi Physical vapor deposition targets, and methods of forming physical vapor deposition targets
US20050115045A1 (en) * 2003-12-01 2005-06-02 Koenigsmann Holger J. High purity ferromagnetic sputter target, assembly and method of manufacturing same
CN103290377A (zh) * 2012-06-13 2013-09-11 成都天马微电子有限公司 磁控管溅射方法、磁控溅射电极及其装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN120210597A (zh) * 2025-05-27 2025-06-27 深圳市黄金屋真空科技有限公司 一种离子镀靶材原料及其制备方法

Also Published As

Publication number Publication date
CN104561917A (zh) 2015-04-29

Similar Documents

Publication Publication Date Title
WO2016086428A1 (zh) 一种真空离子溅镀靶材装置
TW201126004A (en) Target and backing plate assembly
CN201512578U (zh) 一种磁控溅射镀膜设备中的靶材结构
CN109930123A (zh) 一种磁控溅射装置
JP4922581B2 (ja) スパッタリング装置及びスパッタリング方法
CN102534514A (zh) 一种多弧离子镀镀膜的方法
CN107186373A (zh) 一种钛基多层膜钎料及其制备方法
CN85102600B (zh) 高能级磁控溅射离子镀技术
CN204162777U (zh) 一种靶材组件
CN204162776U (zh) 一种靶材组件
US20160155618A1 (en) Vacuum ion sputtering target device
CN101786800A (zh) 一种提高低辐射镀膜玻璃生产效率的方法
EP2159820B1 (en) A physical vapour deposition coating device as well as a physical vapour deposition method
CN202688425U (zh) 一种用于柔性基材磁控溅射镀膜靶材
CN105239048A (zh) 一种金属等离子体源及其应用
CN217324266U (zh) 一种基于大面积矩形磁控溅射靶枪的沉积系统
WO2012118313A2 (ko) 면도기의 면도날 에지와 면도날 제조방법
CN110965036B (zh) 稀土永磁体表面真空镀膜设备
CN203159700U (zh) 一种消除阴极背面辉光放电装置
CN108624856B (zh) 靶材组件
CN210140622U (zh) 辅助阳极装置及具有其的真空磁控溅射设备
JP5364173B2 (ja) スパッタリングターゲット
CN219861545U (zh) 一种用于电阻镀膜机的高利用率磁控溅射靶
CN210826335U (zh) 一种具有便于装卸结构的靶材
CN207727140U (zh) 一种对置靶座磁控溅射装置

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 14416150

Country of ref document: US

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 14907445

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 14907445

Country of ref document: EP

Kind code of ref document: A1